CN114420585A - Reflector plate group, lamp group module, substrate processing equipment and adjusting method of reflector plate group - Google Patents

Reflector plate group, lamp group module, substrate processing equipment and adjusting method of reflector plate group Download PDF

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Publication number
CN114420585A
CN114420585A CN202111546164.0A CN202111546164A CN114420585A CN 114420585 A CN114420585 A CN 114420585A CN 202111546164 A CN202111546164 A CN 202111546164A CN 114420585 A CN114420585 A CN 114420585A
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Prior art keywords
plate
group
lamp
substrate processing
processing apparatus
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秦志坚
燕春
杨进
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Jiangsu Tianxin Micro Semiconductor Equipment Co ltd
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Jiangsu Tianxin Micro Semiconductor Equipment Co ltd
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Priority to CN202111546164.0A priority Critical patent/CN114420585A/en
Priority to TW111106909A priority patent/TWI821919B/en
Publication of CN114420585A publication Critical patent/CN114420585A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
    • G02B7/18—Mountings, adjusting means, or light-tight connections, for optical elements for prisms; for mirrors
    • G02B7/182—Mountings, adjusting means, or light-tight connections, for optical elements for prisms; for mirrors for mirrors
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/0033—Heating devices using lamps
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/0033—Heating devices using lamps
    • H05B3/0038—Heating devices using lamps for industrial applications
    • H05B3/0047—Heating devices using lamps for industrial applications for semiconductor manufacture

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  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Vessels And Coating Films For Discharge Lamps (AREA)

Abstract

The invention discloses a reflector plate group, a lamp group module, substrate processing equipment and an adjusting method of the reflector plate group. The invention can realize independent temperature control of the inner zone and the outer zone by adjusting the inclination angle.

Description

Reflector plate group, lamp group module, substrate processing equipment and adjusting method of reflector plate group
Technical Field
The invention relates to the technical field of semiconductor processing equipment, in particular to a reflecting plate group, substrate processing equipment and a method for adjusting the reflecting plate group.
Background
Substrate processing apparatusThe equipment is mainly used for processing a substrate (or wafer) and performing a heat treatment thereon, and generally, for example, an epitaxial apparatus (epitaxial apparatus) refers to an apparatus for growing a layer of single crystal material having the same lattice arrangement as that of the substrate on a single crystal substrate. There are many methods for realizing epitaxial growth, including molecular beam epitaxy, ultra-high vacuum chemical vapor deposition, atmospheric and vacuum processes, etc. For the atmospheric pressure and reduced pressure epitaxy (Epi) process, the substrate is not only heated to a certain temperature, but also the temperature of the surface of the substrate is ensured to have high uniformity, and various special gases (SiCl) are conveyed to the surface of the substrate4、SiH2Cl2) And the like, so that the gas is chemically reacted to be deposited, and the uniform growth of Si on the surface of the substrate is realized. In this process, a halogen lamp is generally used to emit heat radiation to heat a substrate, and as shown in fig. 1 to 3, a substrate processing apparatus commonly used in the prior art includes: the reaction chamber comprises an upper quartz cover 13, a lower quartz cover 15 and a quartz lining 14, wherein the upper quartz cover 13 is buckled on the top surface of the quartz lining 14, and the lower quartz cover 15 is buckled on the bottom surface of the quartz lining 14 so as to form the sealed reaction chamber.
The substrate processing apparatus further includes: a graphite tray 18 and a rotating shaft; the graphite tray 18 is positioned in the reaction cavity and used for bearing the substrate 17 to be processed; one end of the rotating shaft is connected with the bottom of the graphite tray 18, the other end of the rotating shaft penetrates through the lower quartz cover 15 and extends to the outside of the reaction cavity, and the rotating shaft drives the graphite tray 18 to rotate and lift.
The substrate processing apparatus further includes: an upper lamp set module 11 and a lower lamp set module 16; an upper lamp group module 11 disposed above the upper quartz cover 13; the upper lamp group module 11 comprises an upper reflecting plate 12 and 32 halogen lamps which are uniformly distributed on a circle with the same diameter, the upper reflecting plate 12 is buckled on the upper quartz cover 13, and heating light waves emitted by the halogen lamps are reflected to the upper quartz cover 13 through the upper reflecting plate 12 to heat a substrate 17 to be processed and a graphite tray 18.
The waves emitted by the halogen lamps in the upper lamp group module 11 are reflected by the surfaces 1, 2 and 3 of the reflecting plate and finally absorbed by the substrate 17 to be processed and the graphite tray 18 through the upper quartz cover 13, so that the heating purpose is achieved.
In order to ensure the temperature uniformity of the inner and outer circles on the surface of the substrate 17 to be processed, 32 halogen lamps in the upper lamp group on the same circumference are divided into two lamp zones in the prior art, and specifically, patent CN107523860A describes that the 32 lamps are divided into two different zones by reflecting plates with two different reflection angles to realize the zone heating of the inner and outer two zones, and the two lamp zones are applied with different powers in the actual temperature adjusting process, and the power ratio is about 1: 2.5-1: 3. because the two lamp areas are distributed on the circumference of the same layer with the same diameter, and the reflecting plates used by the two lamp areas are on the same circumference, the waves emitted by the two lamp areas interfere with each other, when the power of one lamp area is adjusted, the area of the other lamp area which is responsible for heating is inevitably affected, and in the temperature adjusting process, the power distribution needs to be adjusted repeatedly, the power distribution proportion of different lamp areas is met, and therefore the purpose of uniform temperature field of the surface of the heated substrate can be achieved.
Lower lamp group module 16: the lower lamp group module 16 comprises a reflector plate and 44 halogen lamps, wherein 12 halogen lamps are distributed on a circle with a smaller diameter, and a first lower reflector plate is adopted to cover the halogen lamps inside, wherein the 12 halogen lamps are mainly responsible for heating the inner ring of the graphite tray 18; in addition, 32 halogen lamps are distributed on a circle with a larger diameter, and a second lower reflecting plate is adopted to buckle the halogen lamps inside, which is mainly responsible for heating the outer ring of the graphite tray 18. The second lower reflection plate and the first lower reflection plate share both sides of one reflection plate, i.e., 6-1 and 6-2 are both sides of one reflection plate. The wave emitted by the outer ring halogen lamp is reflected by the surfaces 4, 5 and 6-1 of the second lower reflecting plate and then is absorbed by the graphite tray 18 through the lower quartz cover 15; the waves emitted from the inner halogen lamp are reflected by the surfaces 6-2, 7, 8 of the first lower reflector, and then are absorbed by the graphite tray 18 through the lower quartz cover 15.
For the lower lamp group reflector system (i.e. the first lower reflector and the second lower reflector), although the halogen lamp on the circle with small diameter and the halogen lamp on the circle with large diameter can be relatively independent to a certain extent through the two surfaces 6-1 and 6-2 of the reflector, and do not interfere with each other, because the surfaces 6-1 and 6-2 of the reflector are the front and back surfaces of the same layer of thin plate, heat transfer still occurs, thus limiting the degree of independence and noninterference of the inner and outer ring halogen lamps. In the actual use process, waves emitted by the inner ring halogen lamp and the outer ring halogen lamp still interfere with each other. That is, since the two reflecting surfaces are formed of the same thin plate, the distance between the two surfaces is determined by the plate thickness and cannot be adjusted. Therefore, a large part of infrared waves emitted by the halogen lamp of the inner ring can flow out of the outer ring; similarly, a large part of infrared waves emitted by the halogen lamp on the outer ring flows out of the inner ring, and mutual interference is generated.
Therefore, under the condition of the prior reflecting plate structure system, the temperature distribution is not uniform, and the waves emitted by the lamp area interfere with each other and cannot be independently adjusted. And the power distribution proportion of the halogen lamps in different partitions is larger and is between 1: 2.5-1: 3, or less. The larger power distribution ratio can cause larger service life difference among halogen lamps in different subareas, and the frequency of replacing the halogen lamps is increased.
Disclosure of Invention
The invention aims to provide a reflector plate group, a lamp group module, substrate processing equipment and a reflector plate group adjusting method.
In order to achieve the above purpose, the invention is realized by the following technical scheme:
a reflective plate set for a substrate processing apparatus, the substrate processing apparatus comprising: the device comprises a lamp group module and a reaction cavity, wherein the reaction cavity is used for accommodating a substrate, and the lamp group module is arranged above and/or below the reaction cavity and is used for heating the substrate; the banks module is including heating banks and reflecting plate group, the heating banks is including setting up the inner circle banks and the outer lane banks of setting at the outer lane at the inner circle, reflecting plate group is used for the heat radiation of reflection heating banks to the reaction intracavity, reflecting plate group includes: and the inner ring reflector plate group is used for reflecting the heat radiation of the inner ring lamp group to the reaction cavity. And the outer ring reflecting plate group is used for reflecting the heat radiation of the outer ring lamp group to the reaction cavity. The separation plate sets up between inner circle reflecting plate and outer lane reflecting plate for separate the heat radiation of inner circle banks and outer lane banks transmission, the intermediate line of the thickness of the length direction extension of separation plate has inclination for vertical direction, inclination is greater than zero degree, inclination is used for ensureing temperature distribution's on the substrate homogeneity.
Optionally, the reflector plate group is annular, and the partition plate is annular.
Optionally, the inner reflector plate group semi-surrounds the inner reflector plate group, and the outer reflector plate group semi-surrounds the outer reflector plate group.
Optionally, the partition plate includes a first surface and a second surface opposite to the first surface, and the first surface is a surface close to the outer ring lamp set.
Optionally, the divider plate further comprises a first sub-plate and a second sub-plate with a gap therebetween.
Optionally, the partition plate further comprises a shielding ring, and the shielding ring is connected with the free end of either or both of the first sub-plate and the second sub-plate.
Optionally, the first surface has a first inclination angle with respect to the vertical direction, and the first inclination angle is used for independently adjusting the opening width of the outer reflector plate group, so as to ensure uniformity of temperature distribution on the substrate.
Optionally, the second surface has a second inclination angle with respect to the vertical direction, the second inclination angle being used to independently adjust the opening width of the inner ring reflector plate group, thereby ensuring uniformity of the temperature distribution on the substrate.
Optionally, the outer reflector plate group comprises a first annular sidewall plate and a first annular plate; the inner ring reflector plate group comprises a second annular side wall plate, a second annular plate and a third annular side wall plate; the first annular side wall plate, the first annular plate, the second annular side wall plate and the second annular plate are sequentially connected end to form a step shape, and one end of the third annular side wall plate is connected with the tail end of the second annular plate.
Optionally, one end of the divider plate is connected to both or either of said second annular sidewall plate, first annular plate.
Optionally, the thinnest part of the separation plate is 2-30mm in thickness.
Optionally, the tilt angle is (0 °,40 ° ].
Optionally, the first tilt angle is (0 °,40 ° ].
Optionally, the second angle of inclination is (0 °,40 ° ].
Optionally, the minimum width of the gap is 2mm to 30 mm.
Optionally, the reflecting plate group adopts one or a combination of several of stainless steel, aluminum and copper.
Optionally, the surface of the reflective plate comprises a gold plating layer.
Alternatively, the divider plate is integrally formed or manufactured separately and then assembled.
In another aspect, the present invention also provides a lamp set module for a substrate processing apparatus, the substrate processing apparatus including: the reaction chamber is used for accommodating a substrate, the lamp group module is arranged above and/or below the reaction chamber and used for heating the substrate, and the lamp group module comprises: the heating lamp group comprises an inner ring lamp group arranged at the inner ring and an outer ring lamp group arranged at the outer ring, and the reflecting plate group is used for reflecting the heat radiation of the heating lamp group to the reaction cavity.
In still another aspect, the present invention also provides a substrate processing apparatus comprising:
the device comprises a lamp group module and a reaction cavity, wherein the reaction cavity is used for accommodating a substrate, and the lamp group module is arranged above and/or below the reaction cavity and is used for heating the substrate;
the lamp group module comprises a heating lamp group and a reflecting plate group used for the substrate processing equipment, wherein the heating lamp group comprises an inner ring lamp group arranged at an inner ring and an outer ring lamp group arranged at an outer ring, and the reflecting plate group is used for reflecting the heat radiation of the heating lamp group to the reaction cavity.
Optionally, the inner lamp set comprises 12 heating lamps, and the outer lamp set comprises 30 heating lamps.
Optionally, the heating lamp is a halogen lamp.
Optionally, the power ratio of one heating lamp of the inner ring lamp group to one heating lamp of the outer ring lamp group is 1: 1.1-1: 1.25.
in yet another aspect, the present invention also provides a method of adjusting a reflection plate group for a substrate processing apparatus as described above, the separation plate including: the adjusting method comprises the following steps of: the tilt angle is adjusted to provide a preliminary uniformity of the temperature distribution across the substrate.
Optionally, the adjusting method further comprises the steps of: the first tilt angle is adjusted to further homogenize the temperature distribution on the substrate.
Optionally, the adjusting method further comprises the steps of: the second tilt angle is adjusted to further homogenize the temperature distribution on the substrate.
The invention has at least the following advantages:
1. according to the invention, the infrared rays emitted by the halogen lamps in the inner ring lamp group and the outer ring lamp group are not interfered with each other by adjusting the inclination angle of the reflector plate group, so that the temperature of the inner ring area and the outer ring area of a heated member (a substrate, or called a wafer) can be independently controlled by the inner ring lamp group and the outer ring lamp group.
2. According to the invention, through adjusting the first inclination angle and/or the second inclination angle, the independence of temperature adjustment of the inner area and the outer area is greatly increased, and finer fine adjustment is realized.
3. The partition plate comprises the first sub-plate and the second sub-plate, a gap is formed between the first sub-plate and the second sub-plate, the heat conduction between the first sub-plate and the second sub-plate is well isolated through the gap, and the effect of independent temperature control of the inner ring and the outer ring is further improved.
4. The partition plate further comprises a shielding ring, the shielding ring is connected with the free end of either one or both of the first sub-plate and the second sub-plate, and the shielding ring is used for shielding light rays reflected from the reaction cavity from entering the gap, so that the independence of temperature control of the inner partition and the outer partition caused by the fact that the light rays enter the gap is avoided.
5. The reflecting plate group and the number of the inner and outer ring lamps are arranged, so that the difficulty in adjusting the surface temperature of the substrate is reduced, the system can adjust the surface temperature of the substrate uniformly and the temperature adjusting efficiency is improved. The non-uniformity of the power of each halogen lamp in the upper chamber is reduced, and the service life of the halogen lamps tends to be consistent.
Drawings
FIG. 1 is a schematic view showing a structure of a substrate processing apparatus in the prior art;
FIG. 2 is a schematic view of an upper reflector plate in a prior art lamp module;
FIG. 3 is a schematic view of a lower reflector plate in a prior art lamp module;
FIG. 4 is a schematic structural diagram of a substrate processing apparatus according to an embodiment of the present invention;
FIG. 5 is a schematic view of an upper reflective plate assembly according to an embodiment of the present invention;
FIG. 6 is a schematic view of a lower reflector plate assembly according to an embodiment of the present invention;
fig. 7 is an experimental graph of the distribution of the luminous flux of the heating light of the inner-ring lamp set according to an embodiment of the invention;
fig. 8 is an experimental graph of the distribution of the luminous flux of the heating light of the outer lamp group according to an embodiment of the present invention;
fig. 9 is an experimental graph of the distribution of the total luminous flux of the heating light of the inner and outer lamp groups according to an embodiment of the present invention;
fig. 10 is a schematic structural diagram of a first partition board in an upper lamp module according to an embodiment of the present invention;
fig. 11 is an experimental graph of distribution of total luminous flux of heating light rays of inner and outer lamp groups according to still another embodiment of the present invention;
fig. 12 is a schematic structural diagram of a first sub-board provided with different angles according to an embodiment of the present invention.
Detailed Description
The following provides a reflection plate group, a lamp group module, a substrate processing apparatus, and a method for adjusting the reflection plate group according to the present invention, which are described in further detail with reference to the accompanying drawings and the following embodiments. The advantages and features of the present invention will become more apparent from the following description. It is to be noted that the drawings are in a very simplified form and are all used in a non-precise scale for the purpose of facilitating and distinctly aiding in the description of the embodiments of the present invention. To make the objects, features and advantages of the present invention comprehensible, reference is made to the accompanying drawings. It should be understood that the structures, ratios, sizes, and the like shown in the drawings and described in the specification are only used for matching with the disclosure of the specification, so as to be understood and read by those skilled in the art, and are not used to limit the implementation conditions of the present invention, so that the present invention has no technical significance, and any structural modification, ratio relationship change or size adjustment should still fall within the scope of the present invention without affecting the efficacy and the achievable purpose of the present invention.
As shown in fig. 4 to 6, the present embodiment provides a reflector plate assembly for a substrate processing apparatus, where the substrate processing apparatus includes a reaction chamber (the reaction chamber includes an upper quartz cover 103, a lower quartz cover 105, and a quartz lining 104, the upper quartz cover 103 is fastened on a top surface of the quartz lining 104, the lower quartz cover 105 is fastened on a bottom surface of the quartz lining 104 to form the reaction chamber), a base 108, a lamp set module, and a support shaft, where the base 108 is disposed in the reaction chamber, the base 108 is configured to carry a substrate 107, the support shaft is configured to support the base 108, and the lamp set module is configured to heat the substrate.
The lamp group module is arranged above and below the reaction chamber, or only arranged above or below the reaction chamber. The lamp group module comprises a heating lamp group and a reflecting plate group, the heating lamp group comprises an inner ring lamp group arranged at an inner ring and an outer ring lamp group arranged at an outer ring, the reflecting plate group is used for reflecting heat radiation of the heating lamp group to the reaction cavity, and the reflecting plate group is annular; the reflection plate group includes: the inner ring reflector plate group is used for reflecting the heat radiation of the inner ring lamp group to the reaction cavity, the outer ring reflector plate group is used for reflecting the heat radiation of the outer ring lamp group to the reaction cavity, and the partition plate is arranged between the inner ring reflector plate and the outer ring reflector plate and used for separating the heat radiation emitted by the inner ring lamp group and the outer ring lamp group.
For a specific design of the lamp group module, see fig. 4, the lamp group module comprises: an upper lamp group module and a lower lamp group module.
The upper lamp group module is arranged above the reaction cavity and comprises a first heating lamp group 101 and a first reflecting plate group 201; the first heating lamp group 101 includes: an upper inner ring lamp group 1011 arranged at the inner ring and an upper outer ring lamp group 1012 arranged at the outer ring; the first heating lamp group 101 is annularly distributed above the reaction chamber, and the first reflector plate group 201 is arranged above the first heating lamp group 101 and semi-surrounds the first heating lamp group 101; the first reflection plate group 201 comprises an upper outer ring reflection plate group 2012, an upper inner ring reflection plate group 2011 and a first partition plate 1061, the first partition plate 1061 is a plate which is annular as a whole, the first partition plate 1061 separates heat radiation emitted by the upper inner ring lamp group 1011 and the upper outer ring lamp group 1012 of the first heating lamp group 101, and the lamp groups mainly radiate infrared rays to generate heat radiation; the upper inner ring reflector group 2011 semi-surrounds the upper inner ring lamp group 1011, the upper outer ring reflector group 2012 semi-surrounds the upper outer ring lamp group 1012, and the inner ring reflector group and the outer ring reflector group are both annular, have concave cross sections and have openings facing the reaction chamber; the first reflector plate set 201 is used for reflecting the heat radiation emitted by the first heating lamp set 101 to the substrate 107; the inclination angle β of the middle line h-h 'of the thickness of the first partition plate 1061 extending in the length direction with respect to the vertical direction O-O' is adjusted, so that the upper inner ring lamp group 1011 and the upper outer ring lamp group 1012 independently heat the substrate 107, specifically, after the inclination angle β is adjusted, the opening width W1 of the upper outer ring reflector plate set 2012 and the opening width W2 of the upper inner ring reflector plate set 2011 are correspondingly changed, thereby changing the amount of heat radiation emitted into the reaction chamber by the upper outer ring lamp group 1012 and the upper inner ring lamp group 1011, and playing a role in adjusting the temperature uniform distribution.
The first heating lamp set 101, the first reflector plate set 201 and the top of the reaction chamber are concentrically arranged.
The upper inner coil lamp set 2011 includes 12 heating lamps, preferably halogen lamps, distributed in a ring shape.
The upper outer ring of lamp set 2012 includes 30 heating lamps, preferably halogen lamps, distributed in a ring shape.
In this embodiment, the lower lamp set module is disposed below the reaction chamber, and includes a second heating lamp set 102 and a second reflector set 202; the second heating lamp group 102 includes: a lower inner ring lamp group 1021 provided at the inner ring and a lower outer ring lamp group 1022 provided at the outer ring; the second heating lamp set 202 is annularly distributed above the reaction chamber, and the second reflector plate set 202 is disposed below the second heating lamp set 102 and semi-surrounds the second heating lamp set 102; the second reflection plate group 202 includes a lower outer-ring reflection plate group 2022, a lower inner-ring reflection plate group 2021, and a second partition plate 1062, where the second partition plate 1062 is a plate having an overall annular shape, and the second partition plate 1062 separates heat radiation emitted by the lower inner-ring lamp group 1021 and the lower outer-ring lamp group 1022 of the second heating lamp group 102; the lower inner ring reflector plate group 2021 semi-surrounds the lower inner ring lamp group 1021, the lower outer ring reflector plate group 2022 semi-surrounds the lower outer ring lamp group 1022, and both the lower inner ring reflector plate group 2021 and the lower outer ring reflector plate group 2022 are annular, have concave cross sections, and have openings facing the reaction chamber; the second reflector plate set 202 is configured to reflect thermal radiation emitted by the second heating lamp set 102 onto the base 108; specifically, after the inclination angle β is adjusted, the opening width W1 of the lower outer-ring reflector plate group 2022 and the opening width W2 of the lower inner-ring reflector plate group 2021 are correspondingly changed, so that the amount of heat radiation emitted into the reaction chamber by the lower outer-ring lamp group 1022 and the lower inner-ring lamp group 1021 is changed, and the effect of adjusting the uniform temperature distribution is achieved.
In this embodiment, the lower lamp set module and the upper lamp set module are symmetrically arranged. The second heating lamp set 102, the second reflector plate set 202 and the bottom of the reaction chamber in the lower lamp set module are concentrically arranged.
The lower inner ring lamp set 1021 includes 12 heating lamps, preferably halogen lamps, distributed in a ring shape.
The lower outer lamp set 1022 includes 30 heating lamps, preferably halogen lamps, distributed in a ring shape.
The upper inner ring lamp set 1011 has a first distance from the top surface of the reaction chamber, the upper outer ring lamp set 1012 has a second distance from the top surface of the reaction chamber, and the first distance is greater than the second distance.
The thickness of the thinnest part of the first partition plate 1061 is 2-30 mm; the thickness of the thinnest portion of the second partition plate 1062 is 2mm to 30 mm.
Preferably, the inclination angle β is greater than 0 °; further, the inclination angle of the middle line h-h 'of the thickness of the first partition plate 1061 extending in the longitudinal direction with respect to the vertical direction O-O' is (0, 40 ° ] (i.e., greater than 0 ° and 40 ° or less), and the inclination angle of the middle line h-h 'of the thickness of the second partition plate 1062 extending in the longitudinal direction with respect to the vertical direction O-O' is (0, 40 ° ] (i.e., greater than 0 ° and 40 ° or less).
The first reflection plate group 201 and the second reflection plate group 202 are both prepared by one or a combination of several of stainless steel, aluminum and copper, and the inner side wall surfaces of the first reflection plate group 201 and the second reflection plate group 202 are plated with gold to be used as reflection surfaces.
In this embodiment, the emission energy of the halogen lamp is mainly concentrated near 1 μm, and the reflection efficiency of the gold layer (reflection surface) can reach 98% or more for a wave with a wavelength of about 1 μm.
Specifically, referring to fig. 5, the upper-outer-ring reflection plate group 2012 includes a first annular side wall plate and a first annular plate, and one side edge of the first annular plate is connected to a top end of the first annular side wall plate.
The upper inner ring reflector group 2011 includes a second annular sidewall plate, a second annular plate, and a third annular sidewall plate.
The lower extreme of second annular side wall board with the opposite side edge connection of first annular board, third annular side wall board with second annular side wall board sets up relatively, the both sides edge of second annular board respectively with third annular side wall board with the top of second annular side wall board is connected, promptly first annular side wall board, first annular board, second annular side wall board, second annular board end to end in proper order form the echelonment, the one end of third annular side wall board links to each other with the tail end of second annular board.
The first partition plate 1061 is disposed between the inner ring reflector plate and the outer ring reflector plate, specifically, the first partition plate 1061 is located at a connection position of the second annular sidewall plate and the first annular plate, and one end of the first partition plate 1061 is connected to both or any one of the second annular sidewall plate and the first annular plate.
The reflecting surface for reflecting the heat radiation (or infrared ray) emitted from the upper outer ring lamp group 1012 includes:
an inner surface 10 of the first annular side wall plate, an inner surface 11 of the first annular plate, and a first surface 12 of the first divider plate, where the first surface 12 is a surface of the first divider plate 1061 near the upper outer ring of lamp sets 1012.
Infrared rays emitted from the upper outer ring lamp set 1012 are reflected into the reaction chamber through the inner surface 10 of the first annular side wall plate, the inner surface 11 of the first annular plate and the first surface 12 of the first partition plate, and heat the substrate 107.
The reflecting surface for reflecting the infrared rays emitted from the upper inner ring lamp group 1011 includes: the inner surface 14 of the second annular side wall plate, the inner surface 15 of the second annular plate, the second surface 13 of the first divider plate and the inner surface 16 of the third annular side wall plate; the second surface 13 is a surface of the first partition 1061 opposite to the first surface 12.
Infrared rays emitted from the upper inner ring lamp group 1011 are reflected into the reaction chamber through the inner surface 14 of the second annular side wall plate, the inner surface 15 of the second annular plate, the second surface 13 of the first partition plate and the inner surface 16 of the third annular side wall plate, and heat the substrate 107.
Similarly, as shown in fig. 6, the lower outer-ring reflection plate group 2022 also includes a first annular side wall plate and a first annular plate, and one side edge of the first annular plate is connected to a bottom end of the first annular side wall plate.
The lower inner-ring reflection-plate group 2021 includes a second annular side wall plate, a second annular plate, and a third annular side wall plate.
The top end of the second annular side wall plate is connected with the edge of the other side of the first annular plate, the second annular side wall plate is arranged opposite to the third annular side wall plate, and the edges of the two sides of the second annular plate are respectively connected with the bottom ends of the second annular side wall plate and the third annular side wall plate. The first annular side wall plate, the first annular plate, the second annular side wall plate and the second annular plate are sequentially connected end to form a step shape, and one end of the third annular side wall plate is connected with the tail end of the second annular plate.
The second partition plate 1062 is disposed between the inner ring reflection plate and the outer ring reflection plate, specifically, the second partition plate 1062 is located at a connection position of the second annular side wall plate and the first annular plate, and one end of the second partition plate 1062 is connected to the second annular side wall plate, the first annular plate, or any one of them.
The reflecting surface for reflecting the infrared rays emitted from the lower outer ring lamp group 1022 includes: the inner surface 20 of the first annular side wall plate, the inner surface 21 of the first annular plate and the first surface 22 of the second partition plate 1062 are arranged on the surface of the second partition plate close to the outer ring lamp group. Infrared rays emitted from the lower outer ring lamp assembly 1022 are reflected into the reflective cavity through the inner surface 20 of the first annular side wall plate, the inner surface 21 of the first annular plate, and the first surface 22 of the second partition plate 1062, and heat the substrate 107.
The reflecting surface for reflecting the infrared rays emitted from the lower inner ring lamp set 1021 includes: the inner surface 24 of the second annular sidewall plate, the inner surface 25 of the second annular plate, the second surface 23 of the second partition plate 1062, and the inner surface 26 of the third annular sidewall plate; the second surface 23 is the opposite side of the second divider plate from the first surface 22. Infrared rays emitted from the lower inner ring lamp set 1021 are reflected into the reaction chamber through the inner surface 24 of the second annular side wall plate, the inner surface 25 of the second annular plate, the second surface 23 of the second partition plate 1062 and the inner surface 26 of the third annular side wall plate, and heat the substrate 107.
In the above embodiment, by adjusting the inclination angle β of the middle line h-h 'of the thickness of the partition plate extending in the length direction with respect to the vertical direction O-O', it is ensured that the temperature is uniformly distributed, and at the same time, it is well ensured that the power distribution ratio between one of the heating lamps of the inner ring lamp set and one of the heating lamps of the outer ring lamp set is maintained in a close range, so that the service lives of the heating lamps of the inner ring lamp set and the heating lamps of the outer ring lamp set are substantially the same, and thus the heating lamps of the inner ring lamp set and the heating lamps of the outer ring lamp set can be replaced in one maintenance, and the number of times of maintaining the lamp set by opening the cavity is greatly reduced. Fig. 7 is an experimental graph showing the distribution of the luminous flux of the heating light of the inner-ring lamp group, and it can be seen that the luminous flux of the heating lamps of the inner-ring lamp group is mostly located in the inner-ring heating region of the substrate 107. Fig. 8 is an experimental graph of distribution of luminous fluxes of heating light rays of outer-circle lamp groups, and it can be seen that the luminous fluxes of the outer-circle lamp groups are mostly located in an outer-circle heating region of the substrate 107, and it can be seen that the luminous fluxes of the heating light rays of the inner-circle lamp groups and the outer-circle lamp groups have good independence with each other.
In the above-described embodiment, adjusting the inclination angle β of the intermediate line h-h 'of the thickness of the partition plate extending in the length direction with respect to the vertical direction O-O' changes the opening width W1 of the outer-ring reflector plate group, but also changes the opening width W2 of the inner-ring reflector plate group, which reduces the independence of the inner and outer partitions to some extent. Fig. 9 is an experimental graph of distribution of total luminous flux of heating light rays of the inner and outer lamp groups, in which the realization S1 represents the luminous flux distribution before the angle of the partition plate is adjusted, and the dotted line S2 represents the luminous flux distribution after the angle of the partition plate is adjusted, and it can be seen that: before the adjustment, the light flux in the middle area is lower than that in the two sides, and after the adjustment, although the light flux in the middle area is increased and the whole light flux distribution is uniform, the light flux in the two side areas is also reduced, so that the temperature distribution uniformity is improved by only adjusting the inclination angle beta of the middle line h-h 'of the thickness of the partition plate extending in the length direction relative to the vertical direction O-O', but the independence of the inner partition area and the outer partition area is not good enough.
To further improve the issue of independence of the inner and outer sections, with continued reference to fig. 5-6, the first inclination angle θ of the first surfaces 12, 22 of the partition plates (which may be either or both of the first and second partition plates) with respect to the vertical direction O-O' is adjusted as required for the temperature uniformity distribution, thereby independently adjusting the opening width W1 of the outer reflector plate group; meanwhile, according to the requirement of temperature uniformity distribution, the second inclination angle δ of the second surfaces 13 and 23 of the partition plates with respect to the vertical direction O-O' can be adjusted, so that the opening width W2 of the inner ring reflection plate group can be independently adjusted. In this embodiment, after the angles of the first surface and the second surface are adjusted, the partition plate is also an annular plate as a whole, and the cross section thereof is trapezoidal-like. Optionally, the separation plate is a solid annular plate, or a hollow annular plate, which is advantageous for avoiding heat conduction between the first surface and the second surface. Optionally, the partition plate is integrally formed or formed by separate assembly.
Further alternatively, referring to fig. 10, without specific limitation, the above lamp set module is merely an example, and the same is also applicable to the lower lamp set module. The divider panel (which may be both or either of the first and second divider panels) includes a first sub-panel 1083 and a second sub-panel 1081. The first sub-plate 1083 and the second sub-plate 1081 are also substantially annular plates as a whole, and the first inclination angle θ of the first surface 12 with respect to the vertical direction can be adjusted by adjusting the inclination angle of the first sub-plate 1083 with respect to the vertical direction O-O'; according to the requirement, the second inclination angle δ of the second surface 13 relative to the vertical direction can be realized by adjusting the inclination angle of the second sub-plate 1081 relative to the vertical direction O-O'; a gap 1085 is provided between the first sub-board 1083 and the second sub-board 1081. Optionally, the first sub-board 1083 and the second sub-board 1081 are integrally formed, or the first sub-board 1083 and the second sub-board 1081 are manufactured separately and then assembled. In this embodiment, the inclination angle β of the intermediate line h-h ' of the thickness of the regulating partition plate extending in the lengthwise direction with respect to the vertical direction O-O ' substantially becomes the inclination angle of the intermediate line L1 (see fig. 10) between the first surface and the second surface of the regulating partition plate extending in the lengthwise direction with respect to the vertical direction O-O '. FIG. 10 illustrates an embodiment of the split, optionally, a first sub-panel 1083 may be connected to one or both of the first annular panel, the second annular sidewall panel, and a second sub-panel 1081 may likewise be connected to one or both of the first annular panel, the second annular sidewall panel; alternatively, the first sub-panel 1083 and the second sub-panel 1081 are connected first and then connected to one or both of the first annular panel, the second annular sidewall panel. Such benefit lies in, conveniently adjust respectively and the arbitrary one of the first daughter board 1081 of dismantlement equipment, second daughter board 1083, simultaneously, the setting of clearance 1085 has prevented the heat-conduction between first daughter board 1083 and the second daughter board 1081 to the independence of interior outer subregion accuse temperature has been guaranteed more. The partition plate further comprises a shielding ring 1087, the shielding ring 1087 is connected with the free end of any one or both of the first sub-plate 1083 and the second sub-plate 1081, and the shielding ring 1087 is used for shielding light rays P reflected from the reaction cavity from entering the gap 1085, so that the influence of the light rays entering the gap on the independence of temperature control of the inner and outer partitions is avoided. The surface of the shielding ring 1087 facing the reaction chamber is a diffuse reflection surface, and the diffuse reflection surface can effectively prevent light rays P from entering a certain area of the reaction chamber to form a hot spot through reflection of the shielding ring 1087, so that uniform distribution of temperature is influenced. Fig. 11 is an experimental graph of distribution of total luminous flux of heating light of the inner and outer lamp groups in the modified embodiment mode, and it can be seen that: compared with FIG. 9, the improved embodiment has a more uniform luminous flux distribution, which reaches + -1.4% in the surface area (diameter ≦ 300mm) of the substrate 107. The lamp group module designed by the embodiment can control the temperature of the surface of the substrate 107 to +/-4 ℃, so that the uniformity of the surface temperature of the substrate (wafer) is greatly improved. And when the uniform level is reached, the power ratio of one heating lamp at the inner ring and the outer ring is changed from 1: 2.5-1: 3, reducing to 1: 1.1-1: 1.25, thereby the service life of the internal and external heating lamps is the same, the internal and external heating lamps are convenient to be replaced together during maintenance, and the times of open cavity maintenance are reduced.
Optionally, a minimum width of the gap 1085 between the first sub-board and the second sub-board ranges from 2mm to 30 mm. The first angle of inclination of the first surface with respect to the vertical is greater than 0 degrees, optionally in the range (0 °,40 ° ] (i.e., greater than 0 °,40 ° or less), and the second angle of inclination of the second surface with respect to the vertical is greater than 0 degrees, optionally in the range (0 °,40 ° ] (i.e., greater than 0 °,40 ° or less), and further preferably the first angle of inclination of the first surface with respect to the vertical is (0 °,20 °), and the second angle of inclination of the second surface with respect to the vertical is (0 °,20 °).
Fig. 4-6, 10, and 12 only show the case (for example, (0 °,40 °)) where the partition plate deviates from the inner circle lamp set by a certain angle (which may be the inclination angle or the first inclination angle or the second inclination angle), but of course, the partition plate may also deviate from the outer circle lamp set by a certain angle according to the requirement of temperature distribution adjustment and the number of the inner and outer circle lamp sets, that is, the above-mentioned range (0 °,40 °) may represent the angle range deviating from the inner circle lamp set and may also represent the angle range deviating from the outer circle lamp set.
The invention also provides a method for adjusting the reflecting plate group, which comprises the following steps:
step one, adjusting the inclination angle to ensure that the temperature distribution on the substrate is preliminarily uniform.
If step one has achieved a uniform temperature distribution, then the following steps two and three need not be performed. Before, after or at the same time of the first step, adjusting the power ratio of one heating lamp of the inner ring lamp group to one heating lamp of the outer ring lamp group to be 1: 1.1-1: 1.25, it is preferred to adjust the power ratio before step one, so that the variables can be conveniently controlled.
And step two, adjusting the first inclination angle to further make the temperature distribution on the substrate uniform.
And step three, adjusting the second inclination angle to further make the temperature distribution on the substrate uniform.
Optionally, the manner of determining the temperature uniformity is determined by the distribution of luminous flux; and step two and step three are to judge whether one or both of the steps need to be carried out according to the result of the step one. For example, fig. 9, although the inclination angle is adjusted, the resultant luminous flux distribution S2 is not sufficiently uniform, and then by adjusting either or both of the first inclination angle and the second inclination angle, a uniform luminous flux distribution as shown in fig. 11 is finally achieved.
As to the specific manner of adjusting the angle (which may be any one of the inclination angle, the first inclination angle, and the second inclination angle), without specific limitation, only taking the first sub-board 1083 as an example, referring to fig. 12, the first sub-board 1083 with different angles is provided, and the replacement is performed according to the requirement of the temperature distribution, for example, the first inclination angle between the first sub-board 1083 of the a model and the vertical direction is θ 1, the first inclination angle between the first sub-board 1083 of the B model and the vertical direction is θ 2, and θ 1 is not equal to θ 2, when the temperature distribution is applied, whether the a model or the B model is used or more other models is selected according to the requirement of uniformity of the temperature distribution; a still optional way of adjusting the angle is to establish a mathematical model of the lamp group module, which is the same as that in the above embodiment, in a way of simulation, adjust the variable parameter first inclination angle θ, and determine the corresponding first inclination angle θ when the luminous flux is uniform. With continued reference to FIG. 12, optionally, the section line of the first surface 12 of the first sub-panel 1083 is a straight line, although the section line may be curved or curved for the purpose of improving the reflected heating light; similarly, the section line of the first surface of the partition plate can be a straight line, a curve or an arc line, and the section line of the second surface can be a straight line, a curve or an arc line; in the case of an arc or a curve, what the adjustment angle (which may be any of the tilt angle, the first tilt angle, and the second tilt angle) ultimately needs to be adjusted is the opening width W1 and the opening width W2.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
In the description of the present invention, it is to be understood that the terms "center," "height," "thickness," "upper," "lower," "vertical," "horizontal," "top," "bottom," "inner," "outer," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the present invention and for simplicity in description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and are not to be considered limiting. In the description of the present invention, "a plurality" means two or more unless otherwise specified.
In the description of the present invention, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "fixed" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral part; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
In the present invention, unless otherwise expressly stated or limited, "above" or "below" a first feature means that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact with each other via another feature therebetween. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
While the present invention has been described in detail with reference to the preferred embodiments, it should be understood that the above description should not be taken as limiting the invention. Various modifications and alterations to this invention will become apparent to those skilled in the art upon reading the foregoing description. Accordingly, the scope of the invention should be determined from the following claims.

Claims (26)

1. A reflective plate set for a substrate processing apparatus, the substrate processing apparatus comprising: the device comprises a lamp group module and a reaction cavity, wherein the reaction cavity is used for accommodating a substrate, and the lamp group module is arranged above and/or below the reaction cavity and is used for heating the substrate; the banks module is including heating banks and reflecting plate group, the heating banks is including setting up the inner circle banks and the outer lane banks of setting at the outer lane at the inner circle, reflecting plate group is used for the heat radiation of reflection heating banks to the reaction intracavity, its characterized in that, reflecting plate group includes:
the inner ring reflector plate group is used for reflecting the heat radiation of the inner ring lamp group to the reaction cavity,
the outer ring reflecting plate group is used for reflecting the heat radiation of the outer ring lamp group to the reaction cavity,
the separation plate sets up between inner circle reflecting plate and outer lane reflecting plate for separate the heat radiation of inner circle banks and outer lane banks transmission, the intermediate line of the thickness of the length direction extension of separation plate has inclination for vertical direction, inclination is greater than zero degree, inclination is used for ensureing temperature distribution's on the substrate homogeneity.
2. The set of reflection plates for a substrate processing apparatus according to claim 1, wherein the set of reflection plates has a ring shape and the partition plate has a ring shape.
3. The set of reflector plates for a substrate processing apparatus of claim 2, wherein the inner set of reflector plates semi-surrounds the inner set of lamps and the outer set of reflector plates semi-surrounds the outer set of lamps.
4. The set of reflector plates for a substrate processing apparatus according to claim 2, wherein the separation plate includes a first surface and a second surface opposite to the first surface, the first surface being a surface adjacent to the outer lamp set.
5. The reflector plate assembly for a substrate processing apparatus as claimed in claim 1 or 4, wherein the separation plate further comprises a first sub-plate and a second sub-plate having a gap therebetween.
6. The set of reflector plates for a substrate processing apparatus as recited in claim 5, wherein the divider plate further comprises a shadow ring coupled to a free end of either or both of the first sub-plate and the second sub-plate.
7. The reflection plate group for a substrate processing apparatus according to claim 4 or 5, wherein the first surface has a first inclination angle with respect to a vertical direction, the first inclination angle being used to independently adjust an opening width of an outer-ring reflection plate group, thereby ensuring uniformity of temperature distribution on the substrate.
8. The reflection plate group for a substrate processing apparatus according to claim 4 or 5, wherein the second surface has a second inclination angle with respect to the vertical direction, the second inclination angle being used to independently adjust the opening width of the inner-ring reflection plate group, thereby ensuring uniformity of temperature distribution on the substrate.
9. The reflector plate group for a substrate processing apparatus as claimed in claim 4 or 5, wherein the outer reflector plate group comprises a first annular sidewall plate and a first annular plate; the inner ring reflector plate group comprises a second annular side wall plate, a second annular plate and a third annular side wall plate; the first annular side wall plate, the first annular plate, the second annular side wall plate and the second annular plate are sequentially connected end to form a step shape, and one end of the third annular side wall plate is connected with the tail end of the second annular plate.
10. The set of reflection plates for a substrate processing apparatus according to claim 9, wherein one end of a separation plate is connected to both or either of the second annular side wall plate, the first annular plate.
11. The reflection plate group for a substrate processing apparatus according to claim 2, wherein the thinnest portion of the separation plate has a thickness of 2 to 30 mm.
12. The reflection plate group for a substrate processing apparatus according to claim 1, wherein the inclination angle is (0 °,40 ° ].
13. The set of reflection plates for a substrate processing apparatus according to claim 7, wherein the first inclination angle is (0 °,40 ° ].
14. The set of reflection plates for a substrate processing apparatus according to claim 8, wherein the second inclination angle is (0 °,40 ° ].
15. The reflection plate group for a substrate processing apparatus according to claim 5, wherein a minimum width of the gap is 2mm to 30 mm.
16. A reflector plate assembly for a substrate processing apparatus as claimed in any one of claims 1-15, wherein said reflector plate assembly is made of one or a combination of stainless steel, aluminum and copper.
17. The reflection plate group for a substrate processing apparatus according to any one of claims 1 to 15, wherein a surface of the reflection plate comprises a gold plating layer.
18. The set of reflection plates for a substrate processing apparatus according to any one of claims 1 to 15, wherein the separation plate is integrally formed or manufactured separately and then assembled.
19. A lamp set module for a substrate processing apparatus, the substrate processing apparatus comprising: lamp group module and reaction chamber, the reaction chamber is used for holding the substrate, the lamp group module sets up in the top and/or the below of reaction chamber, is used for heating the substrate, its characterized in that, the lamp group module includes:
the group of the lamps is heated up,
the reflection plate group for a substrate processing apparatus as claimed in any one of claims 1 to 18,
the heating lamp group comprises an inner ring lamp group arranged at the inner ring and an outer ring lamp group arranged at the outer ring, and the reflecting plate group is used for reflecting the heat radiation of the heating lamp group to the reaction cavity.
20. A substrate processing apparatus, comprising:
the device comprises a lamp group module and a reaction cavity, wherein the reaction cavity is used for accommodating a substrate, and the lamp group module is arranged above and/or below the reaction cavity and is used for heating the substrate;
the lamp set module comprises a heating lamp set and a reflector plate set for a substrate processing apparatus according to any one of claims 1 to 18, wherein the heating lamp set comprises an inner ring lamp set arranged at an inner ring and an outer ring lamp set arranged at an outer ring, and the reflector plate set is used for reflecting heat radiation of the heating lamp set to a reaction cavity.
21. The substrate processing apparatus of claim 20, wherein the inner set of lamps comprises 12 heating lamps and the outer set of lamps comprises 30 heating lamps.
22. The substrate processing apparatus of claim 21, wherein the heating lamp is a halogen lamp.
23. The substrate processing apparatus of claim 20 or 21, wherein a power ratio of one heating lamp of the inner ring lamp set to one heating lamp of the outer ring lamp set is 1:1.1 to 1: 1.25.
24. a method of adjusting a set of reflection plates for a substrate processing apparatus according to any one of claims 1 to 18, the partition plate comprising: the adjusting method comprises the following steps of: the tilt angle is adjusted to provide a preliminary uniformity of the temperature distribution across the substrate.
25. The method of adjusting of claim 24, further comprising the steps of: the first tilt angle is adjusted to further homogenize the temperature distribution on the substrate.
26. An adjustment method according to claim 24 or 25, characterized in that the adjustment method further comprises the steps of: the second tilt angle is adjusted to further homogenize the temperature distribution on the substrate.
CN202111546164.0A 2021-12-16 2021-12-16 Reflector plate group, lamp group module, substrate processing equipment and adjusting method of reflector plate group Pending CN114420585A (en)

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CN116453985A (en) * 2023-06-19 2023-07-18 盛吉盛半导体科技(北京)有限公司 Quick heating device for semiconductor equipment

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CN105470176B (en) * 2015-12-31 2018-08-10 北京北方华创微电子装备有限公司 Semiconductor film-forming apparatus, substrate automatic positioning clamping structure and method for chucking
CN112133656A (en) * 2020-11-02 2020-12-25 南京原磊纳米材料有限公司 Low-pressure low-temperature single-wafer type process epitaxy machine table

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116453985A (en) * 2023-06-19 2023-07-18 盛吉盛半导体科技(北京)有限公司 Quick heating device for semiconductor equipment
CN116453985B (en) * 2023-06-19 2023-09-08 盛吉盛半导体科技(北京)有限公司 Quick heating device for semiconductor equipment

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