CN112133656A - Low-pressure low-temperature single-wafer type process epitaxy machine table - Google Patents
Low-pressure low-temperature single-wafer type process epitaxy machine table Download PDFInfo
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- CN112133656A CN112133656A CN202011206043.7A CN202011206043A CN112133656A CN 112133656 A CN112133656 A CN 112133656A CN 202011206043 A CN202011206043 A CN 202011206043A CN 112133656 A CN112133656 A CN 112133656A
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- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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Abstract
The invention is suitable for the field of semiconductor silicon germanium epitaxial equipment, in particular to a low-pressure low-temperature single-wafer type process epitaxial machine, which comprises: the quartz reaction chamber is additionally provided with a plurality of groups of reflecting plates around the quartz reaction chamber, and the reflecting plates heat the quartz reaction chamber by utilizing annular heating bulb groups which are vertically distributed around the quartz reaction chamber in a surrounding manner, wherein the heating bulb groups comprise annular filaments; the reflecting plate reflects heat emitted by the heating bulb group by utilizing the reflecting coating laid on the surface of the reflecting plate, and concentrates the heat into the quartz reaction cavity in a manner of full coverage and no dead angle; when the quartz reaction cavity works, the reflecting plate reflects heat emitted by the heating bulb set by using the reflecting coating, concentrates the heat into the quartz reaction cavity for heating, and regulates and controls heating power by regulating and controlling a plurality of groups of reflecting plates and the heating bulb set arranged in the reflecting plates so as to achieve the effect of temperature uniformity; the luminous efficiency and the thermal stability are improved.
Description
Technical Field
The invention relates to the field of semiconductor silicon germanium epitaxial equipment, in particular to a low-pressure low-temperature single-wafer type process epitaxial machine.
Background
The low-pressure low-temperature monolithic process tool design is widely applied to the advanced manufacturing process of CMOS (complementary metal oxide semiconductor) with the size of below 28 nanometers, in particular to selective stress silicon germanium materials.
The existing space single-chip epitaxial mainstream low-pressure low-temperature machine is heated by using a bulb and mainly comprises two methods, namely, a strip infrared bulb of an ASM (advanced semiconductor module, ASM for short) which is transversely and longitudinally distributed; secondly, honeycomb-shaped infrared bulbs distributed circumferentially of Applied Materials; the design of the two bulbs puts very high requirements on the quality and the installation of the radiation plate, otherwise, the stability and the repeatability of local temperature in the process are deteriorated, the uniformity of thickness growth, the stability of stress and the uniformity of doping concentration caused by the uniformity change of the temperature are deteriorated, and various indexes of the CMOS are caused to drift out of specifications, but a machine station does not give any alarm.
Disclosure of Invention
The present invention is directed to a low-pressure low-temperature single-wafer type process epitaxy machine, so as to solve the problems mentioned in the background art. In order to achieve the purpose, the invention provides the following technical scheme:
a low pressure low temperature monolithic process epitaxy tool, comprising: the quartz reaction chamber is additionally provided with a plurality of groups of reflecting plates around the quartz reaction chamber, and the reflecting plates heat the quartz reaction chamber by utilizing annular heating bulb groups which are vertically distributed around the quartz reaction chamber in a surrounding manner, wherein the heating bulb groups comprise annular filaments; and the reflecting plate reflects the heat emitted by the heating bulb group by utilizing the reflecting coating paved on the surface of the reflecting plate, and concentrates the heat into the quartz reaction cavity in a manner of full coverage and no dead angle.
When the quartz reaction cavity works, the reflecting plate reflects heat emitted by the heating bulb set by using the reflecting coating, concentrates the heat into the quartz reaction cavity for heating, and regulates and controls heating power by regulating and controlling a plurality of groups of reflecting plates and the heating bulb set arranged in the reflecting plates so as to achieve the effect of temperature uniformity; the luminous efficiency and the thermal stability are improved.
The design of the existing bulb is solved, very high requirements are provided for the quality and the installation of the radiation plate, otherwise, the stability and the repeatability of local temperature are deteriorated in the process, the uniformity of thickness growth, the stability of stress and the uniformity of doping concentration caused by the uniformity change of the temperature are deteriorated, so that various indexes of the CMOS drift out of specifications, and a machine table does not give any alarm.
The quartz reaction cavity can reflect heat emitted by the heating bulb set by the reflecting plate through the reflecting coating laid on the surface of the reflecting plate, and heat is collected.
In the low-pressure low-temperature single-wafer process epitaxial machine station of the invention: the heating bulb group is an annular infrared heating bulb; the infrared heating bulb is in a tungsten filament vacuum structure, and the power is more than 10 Kw.
In the low-pressure low-temperature single-wafer process epitaxial machine station of the invention: a plurality of groups of heating bulbs are additionally arranged in the reflecting plate;
and the reflecting coating laid on the surface of the reflecting plate is a radial gold-plated plate layer, and the radial gold-plated plate layer can effectively isolate the outward diffusion of dispersed infrared light and intensively radiate infrared heat into the quartz reaction cavity.
Further scheme: a plurality of temperature measuring instruments are additionally arranged outside the reflecting plates, the temperature measuring instruments are used for monitoring the temperature, and the heating power is regulated and controlled by matching with a plurality of groups of reflecting plates and a heating bulb group arranged inside the reflecting plates, so that the effect of temperature uniformity is achieved.
Preferably: the temperature measuring instrument is a non-contact infrared temperature measuring instrument and monitors the temperature of the component through a quartz piece.
In the low-pressure low-temperature single-wafer process epitaxial machine station of the invention: and a cooling air circulating cooling system for cooling is additionally arranged on the quartz reaction cavity, and the heating bulb set and the quartz reaction cavity are cooled by the cooling air circulating cooling system, so that the service life of the heating bulb set is prolonged, and the temperature of the quartz reaction cavity is controlled.
Further scheme: the cooling air circulating cooling system is provided with a cooling channel, an air inlet and an air outlet on the quartz reaction cavity.
In the low-pressure low-temperature single-wafer process epitaxial machine station of the invention: the reflecting plate comprises a reflecting plate I and a reflecting plate II, and the reflecting plate I and the reflecting plate II are symmetrically distributed.
Compared with the prior art, the low-pressure low-temperature single-wafer type process epitaxy machine comprises: the quartz reaction chamber is additionally provided with a plurality of groups of reflecting plates around the quartz reaction chamber, and the reflecting plates heat the quartz reaction chamber by utilizing annular heating bulb groups which are vertically distributed around the quartz reaction chamber in a surrounding manner, wherein the heating bulb groups comprise annular filaments; the reflecting plate reflects heat emitted by the heating bulb group by utilizing the reflecting coating laid on the surface of the reflecting plate, and concentrates the heat into the quartz reaction cavity in a manner of full coverage and no dead angle; when the quartz reaction cavity works, the reflecting plate reflects heat emitted by the heating bulb set by using the reflecting coating, concentrates the heat into the quartz reaction cavity for heating, and regulates and controls heating power by regulating and controlling a plurality of groups of reflecting plates and the heating bulb set arranged in the reflecting plates so as to achieve the effect of temperature uniformity; the luminous efficiency and the thermal stability are improved.
Drawings
FIG. 1 is a schematic view of a low-pressure low-temperature single-wafer process epitaxial tool according to the present invention.
In the figure: 1-a temperature measuring instrument; 2-a reflector plate I; 3-an air inlet; 4-quartz reaction chamber; 5-a reflecting plate II; 6-air outlet; 7-heating the bulb set.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention. In the description of the present invention, "a plurality" means two or more unless otherwise specified.
The invention aims to provide a low-pressure low-temperature single-chip process epitaxial machine, which aims to solve the problems that the design of the existing bulb puts very high requirements on the quality and the installation of a radiation plate, otherwise, the stability and the repeatability of local temperature in the process are deteriorated, the uniformity of thickness growth, the stability of stress and the uniformity of doping concentration caused by the uniformity change of the temperature are deteriorated, and various indexes of a CMOS (complementary metal oxide semiconductor) are caused to drift out of specifications, and the machine does not give any alarm. In order to achieve the purpose, the invention provides the following technical scheme:
in an embodiment of the present invention, as shown in fig. 1, a low-pressure low-temperature single-wafer type process epitaxial apparatus includes: the quartz reaction chamber 4 is additionally provided with a plurality of groups of reflecting plates around the quartz reaction chamber 4, the reflecting plates heat the quartz reaction chamber 4 by utilizing annular heating bulb groups 7 which are vertically distributed around the quartz reaction chamber 4, the heating bulb groups 7 annularly surround the quartz reaction chamber 4, and the heating bulb groups 7 comprise annular filaments;
and the reflecting plate reflects the heat emitted by the heating bulb group 7 by utilizing the reflecting coating paved on the surface of the reflecting plate, and concentrates the heat into the quartz reaction cavity 4 in a way of full coverage and no dead angle.
The number of the groups of the reflecting plates is not limited, and the effect of temperature uniformity can be achieved by regulating and controlling the heating power by regulating and controlling the groups of the reflecting plates and the heating bulb group 7 arranged inside the reflecting plates.
In the embodiment of the invention, when the quartz reaction cavity 4 works, the reflecting plate reflects heat emitted by the heating bulb set 7 by using the reflecting coating, concentrates the heat into the quartz reaction cavity 4 for heating, and regulates and controls heating power by regulating and controlling a plurality of groups of reflecting plates and the heating bulb set 7 arranged in the reflecting plate to achieve the effect of temperature uniformity; the luminous efficiency and the thermal stability are improved.
In the embodiment of the present invention, as shown in fig. 1, the quartz reaction chamber 4 may reflect heat generated by the heating lamp set 7 through a reflective plate by using a reflective coating laid on a surface of the reflective plate, so as to collect the heat. The heating bulb group 7 is an annular infrared heating bulb; the infrared heating bulb is of a tungsten filament vacuum structure, and the power is more than 10 Kw; the tungsten filament includes consistency of high temperature service performance, room temperature service performance and filament diameter.
In the embodiment of the invention, as shown in fig. 1, a plurality of groups of heating lamp bulbs 7 are additionally arranged inside the reflecting plate; and the reflecting coating laid on the surface of the reflecting plate is a radial gold-plated plate layer, and the radial gold-plated plate layer can effectively isolate the outward diffusion of dispersed infrared light and intensively radiate infrared heat into the quartz reaction cavity 4. Specifically, a plurality of temperature measuring instruments 1 are additionally arranged outside the reflecting plates, the temperature measuring instruments 1 are used for monitoring the temperature, and the heating power is regulated and controlled by matching with a plurality of groups of reflecting plates and a heating bulb group 7 arranged inside the reflecting plates, so that the effect of temperature uniformity is achieved. Preferably, the thermometer 1 is a non-contact infrared thermometer, and the temperature of the component is monitored by a quartz piece.
In the embodiment of the invention, as shown in fig. 1, the reflecting plate comprises a reflecting plate I2 and a reflecting plate II 5, wherein the reflecting plate I2 and the reflecting plate II 5 are symmetrically distributed; and a cooling air circulating cooling system for cooling is additionally arranged on the quartz reaction cavity 4, and the heating bulb set 7 and the quartz reaction cavity 4 are cooled by the cooling air circulating cooling system, so that the service life of the heating bulb set 7 is prolonged, and the temperature of the quartz reaction cavity 4 is controlled. Specifically, the cooling air circulation cooling system is provided with a cooling channel, an air inlet 3 and an air outlet 6 on the quartz reaction chamber 4.
The invention relates to a low-pressure low-temperature single-wafer type process epitaxial machine, which comprises: the quartz reaction chamber 4 is additionally provided with a plurality of groups of reflecting plates around the quartz reaction chamber 4, the reflecting plates heat the quartz reaction chamber 4 by utilizing annular heating bulb groups 7 which are vertically distributed around the quartz reaction chamber 4, the heating bulb groups 7 annularly surround the quartz reaction chamber 4, and the heating bulb groups 7 comprise annular filaments; the reflecting plate reflects heat emitted by the heating bulb group 7 by utilizing a reflecting coating laid on the surface of the reflecting plate, and concentrates the heat into the quartz reaction cavity 4 in a manner of full coverage and no dead angle; when the quartz reaction cavity 4 works, the reflecting plate reflects heat emitted by the heating bulb set 7 by using the reflecting coating, concentrates the heat into the quartz reaction cavity 4 for heating, and regulates and controls heating power by regulating and controlling a plurality of groups of reflecting plates and the heating bulb set 7 arranged in the reflecting plates to achieve the effect of temperature uniformity; the luminous efficiency and the thermal stability are improved.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art through specific situations.
Although the present description is described in terms of embodiments, not every embodiment includes only a single embodiment, and such description is for clarity only, and those skilled in the art should be able to integrate the description as a whole, and the embodiments can be appropriately combined to form other embodiments as will be understood by those skilled in the art.
Claims (8)
1. A low-pressure low-temperature single-wafer process epitaxial machine is characterized by comprising:
the quartz reaction chamber is additionally provided with a plurality of groups of reflecting plates around the quartz reaction chamber, and the reflecting plates heat the quartz reaction chamber by utilizing annular heating bulb groups which are vertically distributed around the quartz reaction chamber in a surrounding manner, wherein the heating bulb groups comprise annular filaments;
and the reflecting plate reflects the heat emitted by the heating bulb group by utilizing the reflecting coating paved on the surface of the reflecting plate, and concentrates the heat into the quartz reaction cavity in a manner of full coverage and no dead angle.
2. The low pressure low temperature monolithic process epitaxy machine of claim 1, wherein the set of heating lamps is an annular infrared heating lamp.
3. The low pressure, low temperature monolithic process epitaxy tool of claim 1, wherein,
a plurality of groups of heating bulbs are additionally arranged in the reflecting plate;
and the reflecting coating laid on the surface of the reflecting plate is a radial gold-plated plate layer.
4. A low pressure low temperature monolithic process epitaxy machine as claimed in claim 3, wherein a plurality of temperature detectors are attached to the outside of the reflector plate.
5. The low pressure low temperature monolithic process epitaxy machine of claim 4, wherein the temperature detector is a non-contact infrared temperature detector and the temperature of the component is monitored by a quartz piece.
6. The low-pressure low-temperature single-wafer type process epitaxial platform as claimed in claim 1, wherein a cooling air circulation cooling system for cooling is additionally installed on the quartz reaction chamber, and the cooling air circulation cooling system is used for cooling the heating bulb set and the quartz reaction chamber, so as to prolong the service life of the heating bulb set and control the temperature of the quartz reaction chamber.
7. The low-pressure low-temperature single-wafer process epitaxy machine platform of claim 6, wherein the cooling air circulation cooling system is provided with a cooling channel, an air inlet and an air outlet on the quartz reaction chamber.
8. The low pressure low temperature single wafer process epitaxial tool of claims 1-7, wherein the reflector comprises a reflector I and a reflector II, and the reflector I and the reflector II are symmetrically distributed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011206043.7A CN112133656A (en) | 2020-11-02 | 2020-11-02 | Low-pressure low-temperature single-wafer type process epitaxy machine table |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202011206043.7A CN112133656A (en) | 2020-11-02 | 2020-11-02 | Low-pressure low-temperature single-wafer type process epitaxy machine table |
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| CN112133656A true CN112133656A (en) | 2020-12-25 |
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| CN202011206043.7A Pending CN112133656A (en) | 2020-11-02 | 2020-11-02 | Low-pressure low-temperature single-wafer type process epitaxy machine table |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI821919B (en) * | 2021-12-16 | 2023-11-11 | 大陸商江蘇天芯微半導體設備有限公司 | A reflective plate group, a lamp group module, a substrate processing equipment and an adjustment method of the reflective plate group |
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2020
- 2020-11-02 CN CN202011206043.7A patent/CN112133656A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI821919B (en) * | 2021-12-16 | 2023-11-11 | 大陸商江蘇天芯微半導體設備有限公司 | A reflective plate group, a lamp group module, a substrate processing equipment and an adjustment method of the reflective plate group |
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