KR20020026344A - Rotation type Rapid Thermal Process Apparatus for enhanced temperature uniformity - Google Patents

Abstract

PURPOSE: A rotary type rapid thermal processing apparatus for improving temperature uniformity is provided to improve uniformity of temperature by heating uniformly a whole surface of a wafer. CONSTITUTION: A multitude of bar type lamp(100) is installed on an upper portion of a wafer support plate. A multitude of bulb type lamp(200) is installed on upper portions of the bar type lamps(100). A reflective plate(300) is used for reflecting an infrared ray radiated from the bar type lamps(100) and the bulb type lamps(200). The bar type lamps(100) and the bulb type lamps(200) are divided into a plurality of zone or a plurality of group. The bar type lamps(100) is used for increase a temperature of a wafer. The bulb type lamps(200) are used for heating a predetermined region of the wafer between radiation regions.

Description

Rotation type Rapid Thermal Process Apparatus for enhanced temperature uniformity

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a rotary rapid heat treatment apparatus for improving temperature uniformity, and more particularly, to a rotary rapid heat treatment apparatus for improving temperature uniformity of a wafer provided with a heat source device capable of uniformly heating a wafer.

Fabrication of high-performance semiconductor devices, improved device yields per unit time, and continuous reproducibility of the process are common requirements for all equipment in the semiconductor process. In particular, in the case of a wafer heat treatment process, a uniform heat treatment should be performed over the entire surface of the wafer.

A representative example of a wafer heat treatment equipment is a rapid thermal process (RTP) apparatus. Rapid thermal processing equipment includes Rapid Thermal Annealing, Rapid Thermal Cleaning, Rapid Thermal Chemical Vapor Deposition, Rapid Thermal Oxidation, and Rapid Thermal Nitridation Used to perform

In the case of heat treatment using a rapid heat treatment apparatus, precise temperature control is indispensable because the temperature rise and fall of the wafer are performed in a wide temperature range for a very short time. In order to perform the heat treatment process while maintaining the temperature distribution of the wafer uniformly, it is very important to maintain the same thermal characteristics over all regions of the wafer. In this case, the shape, number, configuration, and structure of the heat source device that emit infrared light are important factors.

In general, in order to achieve temperature uniformity over the entire surface of the wafer, a method of arranging lamps so as to form a uniform heat flux on the front surface of the wafer and adjusting the power of the arranged lamps is used. As a heat source of the rapid heat treatment apparatus, a tungsten-halogen lamp is used because it has good cost and power efficiency and can be used longer than an arc lamp. However, since the variables such as the flow rate and flow of the gas flowing into and out of the chamber and the chamber structure at the bottom and side of the wafer are variable, it is very difficult to uniformly form a large temperature on the wafer through optimization of hardware design.

Conventional lamp arrangement methods include an array method of linear type lamps and an array method of bulb type lamps.

Figure 1a is a schematic diagram showing the arrangement of a conventional bar lamp, Figure 1b is a schematic diagram showing the arrangement of a conventional bulb lamp.

Referring to FIG. 1A, rod-shaped lamps 11 are horizontally arranged in parallel to be positioned on a wafer, and reflectors 21 and 21 ′ are provided on the lamps 11.

As the installation method of the reflector plates 21 and 21 ', the reflection is mainly generated on the upper portions of the lamps 11, as in the case of FIG. 1 (a), and the lamp 11 as shown in (2) of FIG. And a reflection surface is positioned between the lamp 11.

In the case of FIG. 1A (1), the radiation angle of the radiant heat emitted from each lamp 11 is large to affect a large area. Therefore, the degree of heating of the predetermined area of the wafer located between the lamps 11 and the predetermined area of the wafer located between the lamps 11 is different. And, to adjust the power for each of the lamps 11 to improve the wafer in-plane temperature uniformity is very difficult.

In the case of (2) of FIG. 1A, the disadvantages of (1) of FIG. 1A can be overcome to some extent, but the predetermined region of the wafer and the lamp 11 positioned directly under both ends of the rod-shaped lamp 11 There is a problem that the degree of heating is different in the predetermined region of the wafer located directly below the central portion of the wafer.

Referring to FIG. 1B, reflecting plates 22 are provided on the side surfaces of the bulb lamps 12, respectively. In this case, it is generally designed to focus on local temperature control. Since many bulb lamps 12 need to be installed, it is expensive to design and manufacture, and maintains temperature uniformity across the wafer surface. There are many difficulties in designing or operating the system.

Accordingly, a problem to be achieved by the present invention is a rotary rapid heat treatment apparatus capable of heating a wafer to a uniform temperature over its entire surface, reducing design and manufacturing costs, and improving temperature uniformity having a heat source device that is easy to operate. To provide.

Figure 1a is a schematic diagram showing the arrangement of a conventional bar lamp;

Figure 1b is a schematic diagram showing the arrangement of a conventional bulb-type lamp;

2A to 2D are views for explaining a first embodiment according to the present invention; And

3A and 3B are views for explaining a first embodiment according to the present invention.

Explanation of symbols on the main parts of the drawings

100, 111, 112, 113, 114, 121, 122, 123, 124, 131, 132, 133, 134

500, 511, 512, 513, 514, 521, 522: bar lamp

200, 211, 220, 230, 240, 250, 600, 611, 620, 630, 640, 650: Bulb lamp

300, 400: reflector

P1, P2, P3, P4, P5, P6: Pyrometer

Z1, Z2, Z3, Z4, Z5, Z6, Z1 ', Z2', Z3 ', Z4', Z5 ', Z6': Zone

G1, G2, G3, G1 ', G2', G3 ': Group

Rotary rapid heat treatment apparatus for improving the temperature uniformity according to the present invention for achieving the above technical problem: a rotary rapid heat treatment having a heat source device, a quartz chamber, a temperature measuring instrument, a temperature control unit, and a wafer support on which the wafer is seated and rotated In the apparatus,

The heat source device includes a plurality of bar lamps divided into a plurality of zones or groups to which the amount of power controlled by the temperature controller is applied, and a plurality of zones or groups to which the amount of power controlled by the temperature controller is applied, respectively. And a plurality of divided bulb lamps and a reflector for reflecting the infrared lamps emitted from the bar lamps and the bulb lamps.

At this time, the rotary rapid heat treatment apparatus for improving the temperature uniformity of the present invention according to an embodiment, the bar lamps are installed on the wafer support, the bulb lamps are installed on the top of the bar lamps It is characterized by.

Further, the rod-shaped lamps are installed in parallel to the transverse, the bulb-shaped lamps, a first bulb-type lamp is installed so as to be located directly above the center point of the wafer support, virtually with respect to the first bulb-type lamp It is characterized in that a plurality of are respectively installed in a predetermined area on the circumference of the circle having a different radius drawn by. Here, twelve bar lamps are installed, and among the bar lamps, first and second bar lamps positioned at the outermost sides and third and third inwardly adjacent ones from the first and second bar lamps, respectively. A fourth bar lamp is used as a first zone, and fifth and six bar lamps sequentially adjacent to the third bar lamp and seventh and eight bar lamps sequentially adjacent to the fourth bar lamp are removed. Two zones, and the remaining four bar lamps located inside the sixth and eighth bar lamps as a third zone, wherein the circles are composed of four circles having different radii from each other; Bulb-shaped lamps installed on the circumference of the first circle located at the outermost part of the lamps are installed to be located inside the first and second bar lamps to form a fourth zone, and are sequentially adjacent to the first circle. Second circle and It is assumed that the bulb-shaped lamps installed on the circumference of three circles are the fifth zone, and the bulb lamps and the first bulb-shaped lamps installed on the circumference of the fourth circle located at the innermost side are the sixth zone. It may be featured. In this case, the temperature measuring devices are installed under the predetermined areas of the wafer respectively corresponding to the first to sixth zones, and the temperature control part is configured to measure the temperature of each of the predetermined temperature areas of the wafer measured from the temperature measuring devices. The temperature specified in the recipe may be compared with each other to control the power applied to each of the lamps forming the first to sixth zones. Alternatively, the first and fourth zones may be the first control group, the second and fifth zones may be the second control group, and the third and sixth zones may be the third control group. The temperature control unit may be installed at lower portions of the predetermined regions of the wafer respectively corresponding to the first to third control groups, respectively, and the temperature controller may be configured to: determine a temperature of each of the predetermined regions of the wafer measured from the temperature measuring instruments and a temperature specified in a recipe. In comparison, it may be characterized by controlling the power applied to the respective lamps of the first to third control groups.

Further, the reflector is installed so that the reflecting surface is located between the top of the bar lamps and the bulb lamp, between the bulb lamps, and in a predetermined region of the inner wall of the chamber, the bar lamp The reflective surface located on the upper portion of the lamp is characterized in that it is installed so as not to block the infrared radiation emitted from the lamp.

On the other hand, the rotary rapid heat treatment apparatus for improving the temperature uniformity of the present invention according to another embodiment, the rod-shaped lamps and the bulb lamps are characterized in that the installation is located on the same plane of the upper surface of the wafer support.

Further, the bulb lamps, the first bulb lamp is installed so as to be located directly above the center point of the wafer support, the predetermined on the circumference of the circle of circles having different radii virtually drawn around the first bulb lamp A plurality of each is installed in the area, the rod-shaped lamps, characterized in that the horizontally installed horizontally so as to be symmetrical between the bulb-shaped lamps. The rod-shaped lamps have six lamps each of which is installed three to be symmetrical from side to side or forward and backward with the bulb-shaped lamps interposed therebetween. A third zone and a fourth bar lamp, which are inwardly adjacent from the first and second bar lamps, respectively, are used as the first zone, and the fifth and six bar lamps located at the innermost side among the bar lamps are located in the second zone. The circles are composed of four circles of different radius from each other, the diameter of the first circle located at the outermost of the four circles is equal to the length of the rod-shaped lamps, the circumference of the first circle The bulb-shaped lamps installed on the third zone, and the bulb-shaped lamps installed on the circumferences of the second circle and the third circle sequentially adjacent to the first circle as the fourth zone, Fourth circle That the first compact lamps with compact lamps which are provided on the main to the fifth zone may be characterized. In this case, the temperature measuring instruments are installed under the predetermined regions of the wafer respectively corresponding to the first to fifth zones, respectively, and the temperature control unit: the temperature of each of the predetermined region of the wafer measured from the temperature measuring instruments. And by comparing the temperatures specified in the and recipes, respectively, to control the power applied to each of the lamps forming the first to fifth zones. Alternatively, the first zone, the second zone, and the third zone are the first control group, the fourth zone is the second control group, the fifth zone is the third control group, and the temperature measuring instruments are: The temperature control unit may be installed at lower portions of the predetermined regions of the wafer respectively corresponding to the first to third control groups, respectively, and the temperature controller may be configured to: determine a temperature of each of the predetermined regions of the wafer measured from the temperature measuring instruments and a temperature specified in a recipe. In comparison, the power applied to each of the lamps of the first to third control groups may be controlled.

Further, the reflector is characterized in that the reflective surface is installed so as to be located between the top of the bar lamps and the bulb lamp, between the bulb lamps, and in a predetermined region of the inner wall of the chamber.

Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings. In the accompanying drawings, like reference numerals are used to designate like elements, and repeated description thereof will be omitted.

Example 1

Figure 2a is a schematic diagram for explaining the rotary rapid heat treatment apparatus according to the first embodiment according to the present invention, Figure 2b is a schematic diagram for explaining the arrangement of lamps in the rotary rapid heat treatment apparatus according to Figure 2a, Figure 2c And FIG. 2D is a schematic diagram for explaining installation and temperature control of pyrometers in the rotary rapid heat treatment apparatus according to FIG. 2A.

Referring to FIG. 2A, the rapid thermal processing apparatus includes a heat source device, a quartz chamber, a temperature gauge, a temperature controller (not shown), and a rotating wafer support on which a wafer is seated and rotated.

The quartz window separates the wafer from the atmosphere, maintains a constant atmosphere during the rapid heat treatment process, protects the wafer from contaminants such as dust in the atmosphere, and transmits infrared rays emitted from the heat source device.

Pyrometers are mainly used to measure the temperature of a wafer in a non-contact manner. The temperature controller compares the temperature measured by the pyrometer with the temperature set in the recipe and adjusts the intensity of power applied to the heat source device.

The heat source device includes bar lamps 100 positioned on top of the wafer support, bulb lamps 200 located on top of the bar lamps 100, and bar lamps 100 and bulb lamps ( Reflector 300 for reflecting the infrared radiation emitted from them. In this case, each of the bar lamps 100 and the bulb lamps 200 is divided into a plurality of zones or groups to which the same strategic amount controlled by the temperature controller is applied. A zone or group is a set of lamps to which electric power of the same intensity is applied, and the number of zones or groups takes into account the installation position of the bar-shaped or bulb-shaped lamps 100 and 200 and the temperature distribution of each of the wafer predetermined regions accordingly. Will be determined. Since the lamps in each zone or group can be individually adjusted in a specific ratio in the control software, the intensity of the lamps in the same zone or group is controlled to the same type according to that ratio.

As such, the reason for installing the bulb lamps 200 on top of the rod lamps 100 is that the rod lamps 100 are used to raise the overall temperature of the wafer as the primary heat source, and the bulb lamps 200 ) Generally have a tendency to abruptly decrease in life when dissipating a large amount of heat, thus limiting the applied power, thus further heating only a predetermined area of the wafer located between the radiating areas of the respective bar lamps 100. To do that. Therefore, the reflecting plate 300 is installed so that the reflecting surface is located between the bar lamps 100 and the bulb lamps 200, between the bulb lamps 200, and in a predetermined region of the inner wall of the chamber, respectively. . At this time, it is apparent that the reflective surface located on the upper part of the bar lamps 100 should be installed so as not to block the infrared radiation emitted from the bulb lamps 200. The reason why the reflector is provided so that there is a reflective surface between the bulb lamps 200 is to reduce the radiation angle of the infrared rays emitted from the bulb lamps 200 so that only a predetermined region of the wafer is heated.

Referring to FIG. 2B, twelve bar lamps 111, 112, 113, 114, 121, 122, 123, 124, 131, 132, 133, and 134 are provided in parallel to each other so as to maintain a constant gap therebetween. . The bulb lamps 211, 220, 230, 240, and 250 are provided with a first bulb lamp 211 so as to be positioned directly above the center point of the wafer, with the first bulb lamp 211 as the center. A plurality is respectively provided in predetermined regions on the circumference of four circles having different radii of virtual drawing. At this time, the bulb lamps 250 installed on the circumference of the first circle located at the outermost position among the four circles are installed to be located inside the rod lamps 111 and 112 positioned at the outermost side.

Zone division of the bar lamps and the bulb lamps installed as described above is made in consideration of the distance from the first bulb lamp 211 and the temperature gradient of the wafer by the experiment.

In the present embodiment, the zone division of the bar lamps 111, 112, 113, 114, 121, 122, 123, 124, 131, 132, 133, and 134 may include first and second outermost positions among the bar lamps. The third and fourth bar lamps 113 and 114 which are adjacent inwardly from the second bar lamps 111 and 112 and the first and second bar lamps are respectively the first zone Z1 and the third bar lamp. The fifth and sixth bar lamps 121 and 122 sequentially adjacent to the lamp 113 and the seventh and eighth bar lamps 123 and 124 sequentially adjacent to the fourth bar lamp 114 are second to each other. As the zone Z2, the remaining four bar lamps 131, 132, 133, and 134 positioned inside the sixth and eighth bar lamps 122 and 124 were used as the third zone Z3.

In addition, zone division of the bulb lamps 211, 220, 230, 240, and 250 may include the bulb lamps 250 installed on the circumference of the first circle located at the outermost position among the four circles. Z4), the fourth circle located at the innermost side with the bulb-shaped lamps 230 and 240 installed on the circumferences of the second circle and the third circle sequentially adjacent to the first circle, as the fifth zone Z5. The bulb-shaped lamps 220 and the first bulb-shaped lamps 211 installed on the circumference of the were set as the sixth zone Z6.

Referring to (1) of FIG. 2C, in the case of distinguishing the zones of the lamps as described above, each of the zones Z1, Z2, Z3, Z4, Z5, and Z6 corresponds to Pyro under the predetermined regions of the wafer, respectively. Meters P1, P2, P3, P4, P5 and P6 are respectively installed. This is because predetermined regions of the wafer having the same distance from the center point of the wafer as the wafer rotates exhibit the same temperature.

In this case, referring to (2) of FIG. 2C, the temperature control unit displays the temperatures T1, T2, T3, and the respective regions of the wafer predetermined regions measured from six pyrometers P1, P2, P3, P4, P5, and P6. T4, T5, T6) and the temperature TR specified in the recipe are respectively compared to control the power applied to the respective lamps forming the first to sixth zones Z1, Z2, Z3, Z4, Z5, and Z6. Done.

In this case, the temperature variation of the wafer can be grasped in more detail to control the power applied to the bar lamps and the bulb lamps.

Meanwhile, as described above, the lamps may be divided into six zones. However, since the lamps overlap with each other, the six zones may be divided into a proper number of control groups.

Accordingly, the first and fourth zones Z1 and Z4 described above are the first control group G1, the second and fifth zones Z2 and Z5 are the second control group G2, and the third and the fourth zones are the first and fourth zones Z1 and Z4. The six zones Z3 and Z6 are referred to as the third control group G3.

Referring to (1) of FIG. 2D, in this case, the pyrometers P1, P2, and P3 are respectively located below the predetermined regions of the wafer corresponding to the first to third control groups G1, G2, and G3, respectively. Only three of them will be installed.

In this case, referring to (2) of FIG. 2D, the temperature control unit may measure the temperature at the temperature T1, T2, T3 and recipe TR of each of the wafer predetermined regions measured from the three pyrometers P1, P2, and P3. Each of the designated temperatures is compared to control the power applied to each of the lamps forming the first to third control groups G1, G2, and G3. Therefore, in this case, the number of installed pyrometers is reduced, and there is an advantage in that the temperature controller is simpler.

Example 2

Figure 3a is a schematic diagram for explaining the rotary rapid heat treatment apparatus according to a second embodiment according to the present invention, Figure 3b is a schematic diagram for explaining the arrangement of lamps in the rotary rapid heat treatment apparatus according to Figure 3a.

Referring to FIG. 3A, a rotary rapid heat treatment apparatus includes a heat source device, a quartz chamber, a temperature measuring device, a temperature controller, and a rotating wafer supporter.

The heat source device reflects the infrared rays emitted from the bar lamps 500 and the bulb lamps 600 installed on the same plane on the wafer, and the bar lamps 500 and the bulb lamps 600. Reflector 400 is included. In this case, each of the bar lamps 500 and the bulb lamps 600 is divided into a plurality of zones or groups to which the strategic amount controlled by the temperature controller is applied. The reflecting plate 400 is installed such that the reflecting surface is positioned between the upper part of the bar lamps 500 and the bulb lamp 600, between the bulb lamps 600, and a predetermined region of the inner wall of the chamber.

Referring to FIG. 3B, the bulb lamps 611, 620, 630, 640, and 650 are provided with a first bulb lamp 611 to be positioned directly above the center point of the wafer support, and the first bulb lamp 611. A plurality is respectively provided in predetermined regions on the circumference of four circles having different radii virtually drawn with respect to the center. The bar lamps 511, 512, 513, 514, 521, and 522 are installed side by side in parallel so as to be symmetrical with the bulb lamps 611, 620, 630, 640, and 650 interposed therebetween. That is, the bar lamps 511, 512, 513, 514, 521, and 522 have a predetermined area including an edge of the wafer such that the bulb lamps 611, 620, 630, 640, and 650 are symmetrical from side to side or back and forth. Six are installed at the top, three each. Accordingly, the bulb lamps 611, 620, 630, 640, 650 are located between the rod lamps 521, 522 located at the innermost side among the rod lamps 511, 512, 513, 514, 521, 522. Since only the light emitting lamps 611, 620, 630, 640, and 650 are installed, the area in which the bar lamps 511, 512, 513, 514, 521, and 522 are installed does not overlap. Therefore, the predetermined area including the center point of the wafer is mainly heated by the bulb lamps 611, 620, 630, 640 and 650, and the predetermined area including the edge is the bar lamps 511, 512, 513, 514, 521. , 522 is predominantly heated and bulb lamps 611, 620, 630, 640, 650 serve as auxiliary heating means. In the wafer, since the radius of rotation generated by the rotation of the wafer is smaller than the predetermined area near the center point, the wafer is installed by arcing the bulb lamp rather than heating with a bar lamp. This is because heating is easy to control the temperature for a small area of area.

Also in this case, the zone division of the bar lamps 611, 620, 630, 640, 650 and the bulb lamps 511, 512, 513, 514, 521, 522 is equal to the distance spaced from the first bulb lamp. In consideration of the temperature gradient of the wafer by the experiment and the like.

Zone division of the bar lamps (511, 512, 513, 514, 521, 522) in the present embodiment is the first and second bar lamps (511, 512) and outermost located among the bar lamps; Third and fourth bar lamps 513 and 514 adjacent inwardly from the first and second bar lamps 511 and 512 are respectively defined as the first zone Z1 ', and are located in the innermost of the bar lamps. The fifth and sixth bar lamps 521 and 522 as the second zone Z2 '.

The zone division of the bulb lamps 611, 620, 630, 640, and 650 may include the bulb lamps 650 installed on the circumference of the first circle located at the outermost side among the four circles. Z3 '), and the bulb-shaped lamps 6630 and 640 installed on the circumferences of the second circle and the third circle sequentially adjacent to the first circle are the fourth zone Z4', and are located at the innermost side. The bulb type lamps 620 and the first bulb type lamp 611 installed on the circumference of the fourth circle are defined as the fifth zone Z5 '.

As described above, in the case of distinguishing the zones of the lamps, pyrometers are installed in the lower portions of the predetermined regions of the wafers corresponding to the respective zones. In addition, the temperature controller compares the temperature of each of the predetermined regions of the wafer measured from the five pyrometers with the temperature specified in the recipe, thereby controlling the power applied to the lamps of the first to fifth zones. .

Meanwhile, as described above, the lamps may be divided into five zones. However, since there are regions where the lamps overlap each other, the five zones may be divided into an appropriate number of groups.

Therefore, the above-described first, second, and third zones Z1 ', Z2', and Z3 ', the first control group G1' and the fourth zone Z4 'are referred to as the second control group G2'. The fifth zone Z5 'is referred to as a third control group G3'.

In this case, only three pyrometers are installed under the predetermined regions of the wafer respectively corresponding to the first to third control groups. In addition, the temperature controller compares the temperature of each of the wafer predetermined regions measured from the three pyrometers with the temperature specified in the recipe, respectively, and controls the power applied to each lamp of the first to third control groups. .

According to the rotary rapid heat treatment apparatus of the present invention as described above, the rod-shaped lamps as the main heat source for the heat treatment of the wafer, and the bulb-type lamps are installed in the area that is not properly heated or other area that requires local control compared to other areas By providing the formed heat source device, the wafer can be heated to a uniform temperature over the entire surface.

Furthermore, the design and manufacturing costs are reduced compared to the conventional light bulb-type only arrangements, which are mainly used for local temperature control, and the operation for local temperature control is easier than the conventional light-only arrangements. Do.

The present invention is not limited to the above embodiments, and it is apparent that many modifications, such as the arrangement form and the number of lamps, are possible to those skilled in the art within the technical spirit of the present invention.

Claims (13)

In the rotary rapid heat treatment apparatus having a heat source device, a quartz chamber, a temperature measuring device, a temperature control unit, and a wafer support on which the wafer is seated and rotated, The heat source device includes a plurality of bar lamps divided into a plurality of zones or groups to which the amount of power controlled by the temperature controller is applied, and a plurality of zones or groups to which the amount of power controlled by the temperature controller is applied, respectively. And a plurality of divided bulb lamps and a reflector reflecting infrared rays emitted from the rod lamps and the bulb lamps. 2. The rapid thermal processing apparatus of claim 1, wherein the bar lamps are positioned on the wafer support, and the lamp lamps are installed on the bar lamps. The method of claim 2, wherein the rod-shaped lamps are installed in parallel horizontally, The bulb lamps are provided with a first bulb lamp so as to be positioned directly above the center point of the wafer support, and in a predetermined area on the circumference of circles having different radii that are virtually drawn around the first bulb lamp. Rotary rapid heat treatment apparatus for improving the temperature uniformity, characterized in that a plurality is provided respectively. 4. The bar lamp of claim 3, wherein twelve bar lamps are installed and adjacent inwardly from the first and second bar lamps and the first and second bar lamps positioned at an outermost position among the bar lamps. The fifth and sixth bar lamps sequentially adjacent from the third bar lamp and the seventh and eighth films sequentially adjacent from the fourth bar lamp with the third and fourth bar lamps as the first zone; A large lamp as a second zone, the remaining four bar lamps located inside the sixth and eighth bar lamps as a third zone, The circles are composed of four circles having different radii from each other, and bulb lamps installed on the circumference of the first circle located at the outermost position among the four circles are located inside the first and second bar lamps. A fourth zone, the bulb-shaped lamps being installed on the circumferences of the second circle and the third circle sequentially adjacent to the first circle, as the fifth zone, A rotary rapid heat treatment apparatus for improving temperature uniformity, wherein the bulb-shaped lamps installed in the circumference and the first bulb-shaped lamp are the sixth zone. 5. The temperature measuring device of claim 4, wherein the temperature measuring devices are respectively installed below predetermined regions of the wafer respectively corresponding to the first to sixth zones. The temperature controller compares a temperature of each of the wafer predetermined regions measured from the temperature measuring devices with a temperature specified in a recipe, and controls power applied to each of the lamps forming the first to sixth zones. Rotary rapid heat treatment apparatus for improving the temperature uniformity. The method of claim 4, wherein the first and fourth zones are the first control group, the second and fifth zones are the second control group, and the third and the sixth zones are the third control group, The temperature measuring instruments are respectively installed below the predetermined regions of the wafer corresponding to the first to third control groups, The temperature controller is configured to control the power applied to each of the lamps forming the first to third control groups by comparing the temperature of each of the wafer predetermined regions measured from the temperature measuring devices with the temperature specified in the recipe. Rotary rapid heat treatment apparatus for improving the temperature uniformity, characterized in that. The reflective plate according to any one of claims 2 to 4, wherein the reflecting plate is formed on an upper portion of the bar lamps and the bulb lamps, between the bulb lamps, and a predetermined area of the inner wall of the chamber. Is installed so that each is positioned, the rapid thermal treatment apparatus to improve the temperature uniformity, characterized in that the reflecting surface located above the bar-shaped lamp is installed so as not to block the infrared radiation emitted from the bulb lamp. The rotary rapid heat treatment apparatus of claim 1, wherein the bar lamps and the bulb lamps are installed on the same plane of the upper portion of the wafer support. 10. The method of claim 8, wherein the bulb lamps, the first bulb lamp is installed so as to be located directly above the center point of the wafer support, a circle having a different radius virtually drawn around the first bulb lamp; A plurality of each is installed in a predetermined area on the circumference of the field, The rod-shaped lamps, the rapid thermal processing apparatus to improve the temperature uniformity, characterized in that the horizontally installed parallel to the bulb-shaped lamps in between. 10. The method of claim 9, wherein the rod-shaped lamps are provided with six each of three so as to be symmetrical from side to side or front to back with the bulb-shaped lamps between, the first and second bar-shaped bar located in the outermost of the rod-shaped lamps Fifth and sixth bar lamps positioned inwardly from among the lamp lamps as third zones and third and fourth bar lamps adjacent inwardly respectively from the lamps and the first and second bar lamps; Is the second zone, The circles are composed of four circles having different radii from each other, and the diameter of the first circle located at the outermost part of the four circles is equal to the length of the bar lamps, and is installed on the circumference of the first circle. The fourth bulb located at the innermost side, and the bulb-shaped lamps as the third zone, and the bulb lamps installed on the circumferences of the second circle and the third circle sequentially adjacent to the first circle as the fourth zone, and the fourth circle located at the innermost side. A rotary rapid heat treatment apparatus for improving temperature uniformity, characterized in that the bulb-shaped lamps installed on the circumference of the lamp and the first bulb-shaped lamp are fifth zones. The method of claim 10, wherein the temperature measuring instruments are respectively installed below predetermined regions of the wafer corresponding to the first to fifth zones, respectively. The temperature controller compares a temperature of each of the predetermined regions of the wafer measured by the temperature measuring devices with a temperature specified in a recipe, and controls power applied to each of the lamps forming the first to fifth zones. Rotary rapid heat treatment apparatus for improving the temperature uniformity. 11. The method of claim 10, wherein the first, second, and third zones are the first control group, the fourth zone is the second control group, and the fifth zone is the third control group, The temperature measuring instruments are respectively installed below the predetermined regions of the wafer corresponding to the first to third control groups, The temperature controller is configured to control the power applied to each of the lamps forming the first to third control groups by comparing the temperature of each of the wafer predetermined regions measured from the temperature measuring devices with the temperature specified in the recipe. Rotary rapid heat treatment apparatus for improving the temperature uniformity, characterized in that. The reflector according to any one of claims 8 to 10, wherein the reflector includes a reflection surface on an upper portion of the bar lamps and the bulb lamps, between the bulb lamps, and a predetermined region of the inner wall of the chamber. Rotary rapid heat treatment apparatus for improving the temperature uniformity, characterized in that the installed so as to be located respectively.