TW202213589A - Load lock chamber and semiconductor process platform - Google Patents

Load lock chamber and semiconductor process platform Download PDF

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TW202213589A
TW202213589A TW110134905A TW110134905A TW202213589A TW 202213589 A TW202213589 A TW 202213589A TW 110134905 A TW110134905 A TW 110134905A TW 110134905 A TW110134905 A TW 110134905A TW 202213589 A TW202213589 A TW 202213589A
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chamber
wafer
support frame
preloading
transfer port
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TW110134905A
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Chinese (zh)
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TWI798838B (en
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馬良
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大陸商北京北方華創微電子裝備有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67184—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the presence of more than one transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention relates to a load lock chamber and a semiconductor process platform. The load lock chamber comprises a chamber body and a wafer support frame; The chamber body is provided with a holding cavity, the wafer support frame is located in the holding cavity, the wafer support frame is provided with a plurality of bearing tables for carrying wafers and the support frame body connected with the plurality of bearing tables, and fixed parts, wherein at least one of the plurality of bearing tables is located above the support frame body, and is provided with a avoidance part that can make the fixed parts pass through; The fixing part is used to fixedly connect the support frame body with the chamber body. The above scheme can solve the problem of low wafer transmission efficiency.

Description

預裝載腔室及半導體製程平臺Preloaded chambers and semiconductor process platforms

本發明涉及半導體晶片製造技術領域，尤其涉及一種預裝載腔室及半導體製程平臺。The invention relates to the technical field of semiconductor wafer manufacturing, in particular to a preloading chamber and a semiconductor process platform.

預裝載腔室是一種將傳輸中的晶圓在真空環境和大氣環境之間轉換的過渡腔室，例如，當晶圓需要從大氣環境轉換到真空環境的情況下，首先使預裝載腔室處於大氣環境，然後通過大氣機械手將晶圓傳輸至預裝載腔室內，之後對預裝載腔室進行抽真空處理，以使得預裝載腔室從大氣環境轉換至真空環境，再由真空機械手將晶圓從預裝載腔室傳輸到真空傳輸腔室內，進而實現將晶圓從大氣環境傳輸至真空環境。The preloading chamber is a transition chamber that transfers the wafers in transit between the vacuum environment and the atmospheric environment. For example, when the wafer needs to be converted from the atmospheric environment to the vacuum environment, the preloading chamber is firstly placed in the vacuum environment. Atmospheric environment, then the wafer is transferred into the preloading chamber by the atmospheric manipulator, and then the preloading chamber is evacuated, so that the preloading chamber is converted from the atmospheric environment to the vacuum environment, and then the wafer is transferred by the vacuum manipulator. The circles are transferred from the preload chamber into the vacuum transfer chamber, which in turn enables the transfer of the wafers from the atmosphere to the vacuum.

相關技術中，預裝載腔室包括腔室本體和晶圓支撐架，晶圓支撐架的底部設置有支撐件，該支撐件通過螺栓固定於腔室本體的底壁上。為了方便裝配，晶圓支撐架與支撐件之間需要預留出安裝高度，以滿足操作人員在使用安裝工具安裝上述螺釘時所需的空間，但是該安裝高度會佔用較大的腔室本體的內部空間，導致腔室本體的容積較大，進而導致預裝載腔室的充氣和抽氣時間較長，從而影響晶圓的傳輸效率。In the related art, the preloading chamber includes a chamber body and a wafer support frame, a support member is disposed at the bottom of the wafer support frame, and the support member is fixed on the bottom wall of the chamber body by bolts. In order to facilitate the assembly, the mounting height needs to be reserved between the wafer support frame and the support to meet the space required by the operator when using the mounting tool to install the above-mentioned screws, but the mounting height will occupy the larger chamber body. The internal space leads to a larger volume of the chamber body, which in turn leads to a longer time for inflation and pumping of the preloading chamber, thereby affecting the wafer transfer efficiency.

本發明公開一種預裝載腔室及半導體製程平臺，以解決晶圓的傳輸效率較低的問題。The invention discloses a preloading chamber and a semiconductor process platform to solve the problem of low wafer transfer efficiency.

為了解決上述問題，本發明採用下述技術方案：In order to solve the above problems, the present invention adopts the following technical solutions:

一種預裝載腔室，包括腔室本體和晶圓支撐架；該腔室本體開設有容納腔，該晶圓支撐架位於該容納腔內，該晶圓支撐架包括沿豎直方向間隔設置的多個用於承載晶圓的承載台和與該多個承載台連接的支撐架本體，以及固定件，其中，該多個承載台中有至少一者位於該支撐架本體的上方，且開設有能夠使該固定件穿過的避讓部；該固定件用於將該支撐架本體與該腔室本體固定連接。A preloading chamber includes a chamber body and a wafer support frame; the chamber body is provided with an accommodating cavity, the wafer support frame is located in the accommodating cavity, and the wafer support frame comprises a plurality of A carrying table for carrying wafers, a supporting frame body connected to the plurality of carrying tables, and a fixing member, wherein at least one of the plurality of carrying tables is located above the supporting frame body, and is The avoidance part through which the fixing piece passes; the fixing piece is used for fixedly connecting the support frame body and the chamber body.

一種半導體製程平臺，包括真空傳輸腔室、大氣傳輸腔室和至少一個上述的預裝載腔室，該真空傳輸腔室上的傳輸口與該真空傳片口相連通，該大氣傳輸腔室的傳輸口與該大氣傳片口相連通。A semiconductor process platform, comprising a vacuum transfer chamber, an atmosphere transfer chamber and at least one of the above-mentioned preloading chambers, a transfer port on the vacuum transfer chamber is communicated with the vacuum wafer transfer port, and a transfer port of the atmosphere transfer chamber It communicates with the air transmission port.

本發明採用的技術方案能夠達到以下有益效果：The technical scheme adopted in the present invention can achieve the following beneficial effects:

本發明公開的預裝載腔室中，晶圓支撐架包括沿豎直方向間隔設置的多個用於承載晶圓的承載台和與多個承載台連接的支撐架本體，以及固定件，其中，多個承載台中有至少一者位於支撐架本體的上方，且開設有能夠使固定件穿過的避讓部；固定件用於將支撐架本體與腔室本體固定連接。此方案中，操作人員在安裝固定件時，可以從上方將固定件經由位於支撐架本體上方的承載台的避讓部穿過，進而安裝在支撐架本體與腔室本體上，以實現二者的固定連接，由此，無需在晶圓支撐架與腔室本體的底壁之間預留安裝固定件的操作空間，從而可以降低晶圓支撐架的整體高度，進而可以減小容納腔的容積，從而可以縮短預裝載腔室的充氣和抽氣時間，進而提高晶圓的傳輸效率。In the preloading chamber disclosed in the present invention, the wafer support frame includes a plurality of supporting platforms for carrying wafers and a supporting frame body connected with the plurality of supporting platforms, and a fixing member, which are arranged at intervals along the vertical direction, and wherein, At least one of the plurality of bearing platforms is located above the support frame body, and is provided with an escape portion through which the fixing piece can pass; the fixing piece is used for fixedly connecting the support frame body and the chamber body. In this solution, when installing the fixing member, the operator can pass the fixing member from above through the avoidance part of the bearing platform located above the support frame body, and then install it on the support frame body and the chamber body, so as to realize the connection between the two. Fixed connection, thus, there is no need to reserve an operation space for installing the fixture between the wafer support frame and the bottom wall of the chamber body, so that the overall height of the wafer support frame can be reduced, and the volume of the accommodating cavity can be reduced, As a result, the filling and pumping time of the preloading chamber can be shortened, thereby improving the transfer efficiency of the wafers.

本發明公開的半導體製程平臺，其通過採用本發明公開的上述預裝載腔室，可以縮短預裝載腔室的充氣和抽氣時間，進而提高晶圓的傳輸效率。The semiconductor process platform disclosed in the present invention, by using the preloading chamber disclosed in the present invention, can shorten the inflation and pumping time of the preloading chamber, thereby improving the transfer efficiency of wafers.

以下揭露提供用於實施本揭露之不同構件之許多不同實施例或實例。下文描述組件及配置之特定實例以簡化本揭露。當然，此等僅為實例且非意欲限制。舉例而言，在以下描述中之一第一構件形成於一第二構件上方或上可包含其中該第一構件及該第二構件經形成為直接接觸之實施例，且亦可包含其中額外構件可形成在該第一構件與該第二構件之間，使得該第一構件及該第二構件可不直接接觸之實施例。另外，本揭露可在各個實例中重複參考數字及/或字母。此重複出於簡化及清楚之目的且本身不指示所論述之各個實施例及/或組態之間的關係。The following disclosure provides many different embodiments or examples of different components for implementing the present disclosure. Specific examples of components and configurations are described below to simplify the present disclosure. Of course, these are only examples and are not intended to be limiting. For example, in the following description a first member is formed over or on a second member may include embodiments in which the first member and the second member are formed in direct contact, and may also include additional members An embodiment may be formed between the first member and the second member so that the first member and the second member may not be in direct contact. Additionally, the present disclosure may repeat reference numerals and/or letters in various instances. This repetition is for the purpose of simplicity and clarity and does not in itself indicate a relationship between the various embodiments and/or configurations discussed.

此外，為便於描述，諸如「下面」、「下方」、「下」、「上方」、「上」及類似者之空間相對術語可在本文中用於描述一個元件或構件與另一(些)元件或構件之關係，如圖中圖解說明。空間相對術語意欲涵蓋除在圖中描繪之定向以外之使用或操作中之裝置之不同定向。設備可以其他方式定向(旋轉90度或按其他定向)且因此可同樣解釋本文中使用之空間相對描述詞。Furthermore, for ease of description, spatially relative terms such as "below," "below," "under," "above," "over," and the like may be used herein to describe one element or component and another(s) The relationship of elements or components, as illustrated in the figure. Spatially relative terms are intended to encompass different orientations of the device in use or operation other than the orientation depicted in the figures. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and thus the spatially relative descriptors used herein may likewise be interpreted.

儘管陳述本揭露之寬泛範疇之數值範圍及參數係近似值，然儘可能精確地報告特定實例中陳述之數值。然而，任何數值固有地含有必然由於見於各自測試量測中之標準偏差所致之某些誤差。再者，如本文中使用，術語「大約」通常意謂在一給定值或範圍之10%、5%、1%或0.5%內。替代地，術語「大約」意謂在由此項技術之一般技術者考量時處於平均值之一可接受標準誤差內。除在操作/工作實例中以外，或除非以其他方式明確指定，否則諸如針對本文中揭露之材料之數量、時間之持續時間、溫度、操作條件、數量之比率及其類似者之全部數值範圍、數量、值及百分比應被理解為在全部例項中由術語「大約」修飾。相應地，除非相反地指示，否則本揭露及隨附發明申請專利範圍中陳述之數值參數係可根據需要變化之近似值。至少，應至少鑑於所報告有效數位之數目且藉由應用普通捨入技術解釋各數值參數。範圍可在本文中表達為從一個端點至另一端點或在兩個端點之間。本文中揭露之全部範圍包含端點，除非另有指定。Notwithstanding that the numerical ranges and parameters setting forth the broad scope of the disclosure are approximations, the numerical values set forth in the specific examples are reported as precisely as possible. Any numerical value, however, inherently contain certain errors necessarily resulting from the standard deviation found in their respective testing measurements. Also, as used herein, the term "about" generally means within 10%, 5%, 1%, or 0.5% of a given value or range. Alternatively, the term "about" means within an acceptable standard error of the mean when considered by one of ordinary skill in the art. Except in operating/working examples, or unless expressly specified otherwise, such as for amounts of materials disclosed herein, durations of time, temperatures, operating conditions, ratios of amounts, and the like, all numerical ranges, Amounts, values and percentages should be understood to be modified by the term "about" in all instances. Accordingly, unless indicated to the contrary, the numerical parameters set forth in the present disclosure and the accompanying claims are approximations that may vary as desired. At the very least, each numerical parameter should be interpreted by applying ordinary rounding techniques at least in view of the number of reported significant digits. A range may be expressed herein as from one endpoint to the other or between the two endpoints. All ranges disclosed herein include endpoints unless otherwise specified.

以下結合附圖，詳細說明本發明各個實施例公開的技術方案。The technical solutions disclosed by the various embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

如圖1~圖9所示，本發明實施例公開一種預裝載腔室100，該公開的預裝載腔室100包括腔室本體110和晶圓支撐架120。As shown in FIGS. 1 to 9 , an embodiment of the present invention discloses a preloading chamber 100 . The disclosed preloading chamber 100 includes a chamber body 110 and a wafer support frame 120 .

腔室本體110為預裝載腔室100的主體部件，其為預裝載腔室100的其他組成部件提供安裝基礎。如圖7所示，腔室本體110開設有容納腔111，晶圓支撐架120位於容納腔111內。如圖8所示，晶圓支撐架120包括沿豎直方向間隔設置的多個用於承載晶圓300的承載台121和與多個承載台121連接的支撐架本體122，以及固定件130，多個承載台121中有至少一者位於支撐架本體122的上方，例如，圖8中示出了兩個承載台，其中一個承載台為第一承載台121a，其位於支撐架本體122的上方，其中另一個承載台為第二承載台121b，其與支撐架本體122一體成型，換言之，該第二承載台121b在支撐架本體122上加工而成，這樣可以進一步簡化晶圓支撐架120的結構，減少晶圓支撐架120的佔用空間。當然，在實際應用中，根據具體需要，承載台121的數量還可以為三個以上，而且，也可以採用所有的承載台121與支撐架本體122均是相互獨立的結構。The chamber body 110 is the main body part of the preload chamber 100 , which provides a mounting base for the other components of the preload chamber 100 . As shown in FIG. 7 , the chamber body 110 is provided with an accommodating cavity 111 , and the wafer support frame 120 is located in the accommodating cavity 111 . As shown in FIG. 8 , the wafer support frame 120 includes a plurality of supporting tables 121 for carrying the wafers 300 , a plurality of supporting frames 122 connected to the plurality of supporting tables 121 , and a fixing member 130 , which are arranged at intervals in the vertical direction. At least one of the plurality of bearing platforms 121 is located above the support frame body 122 . For example, FIG. 8 shows two bearing platforms, one of which is the first bearing platform 121 a , which is located above the support frame body 122 , the other carrier is the second carrier 121b, which is integrally formed with the support frame body 122, in other words, the second carrier table 121b is processed on the support frame body 122, which can further simplify the wafer support frame 120. The structure reduces the occupied space of the wafer support frame 120 . Of course, in practical applications, the number of the bearing platforms 121 may be more than three according to specific needs, and all the bearing platforms 121 and the support frame body 122 may be independent of each other.

需要說明的是，任意相鄰的兩個承載台121之間，例如第一承載台121a和第二承載台121b之間需要預留出晶圓300移動所需的間隙，第一承載台121a與腔室本體110的頂壁也需要預留出晶圓300移動所需的間隙，從而防止晶圓300在移動的過程中發生碰撞。It should be noted that, a gap required for the movement of the wafer 300 needs to be reserved between any two adjacent bearing platforms 121, for example, between the first bearing platform 121a and the second bearing platform 121b, and the first bearing platform 121a and the The top wall of the chamber body 110 also needs to reserve a gap required for the wafer 300 to move, so as to prevent the wafer 300 from colliding during the movement.

可選地，容納腔111的深度可以為40mm，第一承載台121a的承載面與第二承載台121b的承載面之間的距離可以為10mm。第一承載台121a的承載面與腔室本體110的頂壁之間的距離可以為12mm。第二承載台121b的承載面與腔室本體110的底壁之間的距離可以為18mm。當然，還可以為其他數值，本文對此不作限制。Optionally, the depth of the accommodating cavity 111 may be 40 mm, and the distance between the bearing surface of the first bearing platform 121 a and the bearing surface of the second bearing platform 121 b may be 10 mm. The distance between the bearing surface of the first bearing platform 121a and the top wall of the chamber body 110 may be 12 mm. The distance between the bearing surface of the second bearing platform 121b and the bottom wall of the chamber body 110 may be 18 mm. Of course, other values may also be used, which are not limited in this article.

如圖8所示，位於支撐架本體122上方的第一承載台121a開設有能夠使固定件130穿過的避讓部1211，該避讓部1211例如為沿豎直方向貫通第一承載台121a的通孔，或者也可以是避讓缺口。固定件130用於將支撐架本體122與腔室本體110固定連接。固定件130可穿過避讓部1211裝配於支撐架本體122與腔室本體110上，以實現支撐架本體122與腔室本體110的固定連接。As shown in FIG. 8 , the first bearing platform 121a located above the support frame body 122 is provided with a recess portion 1211 through which the fixing member 130 can pass through. holes, or alternatively, avoidance gaps. The fixing member 130 is used for fixing the connection between the support frame body 122 and the chamber body 110 . The fixing member 130 can be assembled on the support frame body 122 and the chamber body 110 through the avoidance portion 1211 , so as to realize the fixed connection between the support frame body 122 and the chamber body 110 .

具體的操作過程中，支撐架本體122背離第一承載台121a的一側與腔室本體110的底部相接觸，操作人員在安裝固定件130時，可以從上方將固定件130經由避讓部1211穿過，進而安裝在支撐架本體122與腔室本體110上，以實現二者的固定連接，由此，無需在支撐架本體122與腔室本體110的底壁之間預留安裝固定件的操作空間，從而可以降低晶圓支撐架120的整體高度，進而可以減小容納腔111的容積，從而可以縮短預裝載腔室的充氣和抽氣時間，進而提高晶圓的傳輸效率。During the specific operation, the side of the support frame body 122 away from the first bearing platform 121 a is in contact with the bottom of the chamber body 110 . When installing the fixing member 130 , the operator can pass the fixing member 130 through the avoidance portion 1211 from above. Then, it is installed on the support frame body 122 and the chamber body 110 to realize the fixed connection of the two. Therefore, there is no need to reserve the operation of installing a fixing piece between the support frame body 122 and the bottom wall of the chamber body 110. Therefore, the overall height of the wafer support frame 120 can be reduced, and the volume of the accommodating cavity 111 can be reduced, thereby shortening the filling and pumping time of the preloading chamber, thereby improving the wafer transfer efficiency.

需要注意的是，避讓部1211的最小的端面的面積需要大於固定件130最大的端面的面積，從而能夠使得固定件130能夠穿過避讓部1211。It should be noted that the area of the smallest end face of the escape portion 1211 needs to be larger than the area of the largest end face of the fixing member 130 , so that the fixing member 130 can pass through the escape portion 1211 .

可選地，支撐架本體122上，且位於避讓部1211的下方開設有安裝孔1221，該安裝孔1221可以為通孔，也可以為螺紋孔。固定件130例如為緊固螺釘，該緊固螺釘一端穿過安裝孔1221，並與腔室本體110螺紋連接。固定件130可以為鉚釘，也可以為螺栓。Optionally, an installation hole 1221 is formed on the support frame body 122 and located below the avoidance portion 1211 , and the installation hole 1221 may be a through hole or a threaded hole. The fixing member 130 is, for example, a fastening screw. One end of the fastening screw passes through the installation hole 1221 and is threadedly connected to the chamber body 110 . The fixing member 130 may be a rivet or a bolt.

需要說明的是，上述固定件130還可以採用其他任意結構將支撐架本體122與腔室本體110固定連接，例如，卡接結構、插接結構等等，根據不同結構的固定件130，可以適應性地在支撐架本體122與腔室本體110上設計相應的連接結構。It should be noted that the above-mentioned fixing member 130 can also adopt any other structure to fixedly connect the support frame body 122 and the chamber body 110, for example, a clip structure, a plug-in structure, etc., according to different structures of the fixing member 130, it can be adapted to Corresponding connection structures are designed on the support frame body 122 and the chamber body 110 .

本文提供一種腔室本體110的具體結構，當然還可以採用其他結構，本文對此不作限制。具體地，如圖7所示，腔室本體110可以包括主體部113、底板114和蓋體112，主體部113內可以設有在豎直方向貫通主體部113的貫通腔，該貫通腔是指由主體部113的上端面貫穿至下端面。蓋體112和底板114分別可拆卸地設置於主體部113的上端面和下端面，且蓋體112的底面、主體部113構成上述貫通腔的內壁和底板114的頂面共同圍合形成容納腔111。固定件130用於將支撐架本體122與底板114固定連接。A specific structure of the chamber body 110 is provided herein. Of course, other structures may also be used, which are not limited herein. Specifically, as shown in FIG. 7 , the chamber body 110 may include a main body portion 113 , a bottom plate 114 and a cover body 112 . The main body portion 113 may be provided with a through cavity penetrating the main body portion 113 in the vertical direction. The through cavity refers to It penetrates from the upper end surface of the main-body part 113 to the lower end surface. The cover body 112 and the bottom plate 114 are respectively detachably disposed on the upper end surface and the lower end surface of the main body portion 113 , and the bottom surface of the cover body 112 , the inner wall of the main body portion 113 constituting the above-mentioned through-cavity and the top surface of the bottom plate 114 are jointly enclosed to form a container. Cavity 111. The fixing member 130 is used for fixing the connection between the support frame body 122 and the bottom plate 114 .

上述腔室本體110是由主體部113、底板114和蓋體112構成的分體式結構，這樣，當腔室本體110的局部損壞時，可以更換腔室本體110上對應的部件，從而無需對腔室本體110整體進行更換，進而提高了腔室本體110的可維修性能，進而延長了腔室本體110的使用壽命。另外，當預裝載腔室100需要加入其它功能時，可以通過更換腔室本體110的底板114或蓋體112即可完成，從而使得預裝載腔室100能夠集成更多的功能，進而提高了預裝載腔室100的使用性能。The above-mentioned chamber body 110 is a split structure composed of the main body 113 , the bottom plate 114 and the cover body 112 . In this way, when the chamber body 110 is partially damaged, the corresponding parts on the chamber body 110 can be replaced, so that there is no need for the chamber body 110 The chamber body 110 is replaced as a whole, thereby improving the maintainability of the chamber body 110 and extending the service life of the chamber body 110 . In addition, when the preloading chamber 100 needs to add other functions, it can be done by replacing the bottom plate 114 or the cover 112 of the chamber body 110 , so that the preloading chamber 100 can integrate more functions, thereby improving the preloading chamber 100 . Loading chamber 100 performance in use.

上述實施例中，底板114可以為上文所述的主體部113的部分底壁，也就是說底板114可以為腔室本體110的部分底壁。蓋體112可以為上文所述的主體部113的頂壁，也就是說蓋體112可以為腔室本體110的頂壁。In the above embodiment, the bottom plate 114 may be a part of the bottom wall of the main body part 113 described above, that is, the bottom plate 114 may be a part of the bottom wall of the chamber body 110 . The cover body 112 may be the top wall of the main body portion 113 described above, that is, the cover body 112 may be the top wall of the chamber body 110 .

具體地，蓋體112與主體部113可以採用螺紋或卡接等連接方式，當然還可以採用其他連接方式文本不作限制。主體部113與底板114也可以採用螺紋或者卡接等連接方式，當然還可以採用其他方式本文不作限制。Specifically, the cover body 112 and the main body portion 113 may be connected by a screw thread or a snap connection, and of course other connection methods may also be used. The text is not limited. The main body portion 113 and the bottom plate 114 may also be connected in a manner such as screw thread or snap connection, and of course, other manners may also be employed, which are not limited herein.

進一步地，上述腔室本體110是由主體部113、底板114和蓋體112構成的分體式結構，在將腔室本體110組合前，可以先將晶圓支撐架120固定於底板114上，然後再將底板114安裝入主體部113內的貫通腔中。此時，晶圓支撐架120固定於底板114的安裝過程可以在貫通腔外進行，從而使得具有較大的操作空間，進而不容易造成操作人員的磕碰，提高操作人員的人身安全。需要注意的是，先將晶圓支撐架120固定於底板114上，再將底板114插入貫通腔時，主體部113上需要開設避讓空間或者設計晶圓支撐架120外輪廓尺寸使其避讓貫通腔，從而防止主體部113與晶圓支撐架120發生干涉。Further, the above-mentioned chamber body 110 is a split structure composed of a main body 113 , a bottom plate 114 and a cover body 112 . Before assembling the chamber body 110 , the wafer support frame 120 can be fixed on the bottom plate 114 , and then Then, the bottom plate 114 is installed into the through cavity in the main body portion 113 . At this time, the mounting process of the wafer support frame 120 fixed to the bottom plate 114 can be performed outside the through-cavity, so that there is a larger operating space, and the operator is not easily bumped, thereby improving the personal safety of the operator. It should be noted that, when the wafer support frame 120 is first fixed on the bottom plate 114, and then the bottom plate 114 is inserted into the through cavity, an avoidance space needs to be provided on the main body 113 or the outer contour of the wafer support frame 120 needs to be designed to avoid the through cavity. , so as to prevent the main body portion 113 from interfering with the wafer support frame 120 .

在一種可選的實施例中，底板114內可以設置有冷卻裝置，該冷卻裝置用於對置於晶圓支撐架120（即，承載台121）上的晶圓300進行冷卻。此時，底板114具有冷卻功能，從而可以滿足晶圓300在加工時需要對晶圓300進行冷卻的加工製程，進而使得預裝載腔室100的功能性更強。In an optional embodiment, a cooling device may be provided in the bottom plate 114, and the cooling device is used to cool the wafer 300 placed on the wafer support frame 120 (ie, the carrier 121). At this time, the bottom plate 114 has a cooling function, so as to satisfy the processing process that the wafer 300 needs to be cooled during processing, thereby making the preloading chamber 100 more functional.

可選地，冷卻裝置可以為水冷型冷卻裝置，在底板114內設置有水冷用銅管，銅管與冷卻水循環系統相連通，銅管內可以通入溫度較低的冷卻水，從而使得底板114保持較低的溫度，底板114與溫度較高的晶圓300之間形成溫度差，進而對晶圓300進行冷卻。當然，冷卻裝置也可以為其他類型的冷卻裝置，對於冷卻裝置的具體類型本文不作限制。Optionally, the cooling device may be a water-cooled cooling device, and a copper tube for water cooling is arranged in the bottom plate 114, the copper tube is communicated with the cooling water circulation system, and cooling water with a lower temperature can be passed into the copper tube, so that the bottom plate 114 Keeping the temperature lower, a temperature difference is formed between the bottom plate 114 and the higher temperature wafer 300 , thereby cooling the wafer 300 . Of course, the cooling device may also be other types of cooling devices, and the specific type of the cooling device is not limited herein.

或者，在另一種可選的實施例中，底板114內設置有加熱裝置，該加熱裝置用於對置於晶圓支撐架120（即，承載台121）上的晶圓300進行加熱。此時，底板114具有加熱功能，因此可以對預裝載腔室100內的晶圓300進行加熱，進而使得預裝載腔室100的功能性更強。Or, in another optional embodiment, a heating device is provided in the bottom plate 114 , and the heating device is used to heat the wafer 300 placed on the wafer support frame 120 (ie, the support table 121 ). At this time, the bottom plate 114 has a heating function, so the wafers 300 in the preloading chamber 100 can be heated, thereby making the preloading chamber 100 more functional.

可選地，加熱裝置可以為電熱絲，對電熱絲進行通電，電熱絲溫度升高，從而使得底板114保持較高的溫度，底板114與溫度較低的晶圓300之間形成溫度差，進而對晶圓300進行加熱。當然，加熱裝置也可以為其他結構，本文不作限制。Optionally, the heating device may be an electric heating wire. When the electric heating wire is energized, the temperature of the electric heating wire increases, so that the bottom plate 114 maintains a relatively high temperature, and a temperature difference is formed between the bottom plate 114 and the lower temperature wafer 300, and further Wafer 300 is heated. Of course, the heating device may also have other structures, which are not limited herein.

上述實施例中，預裝載腔室100設置有功能元件，該功能元件能夠實現預裝載腔室100的多種功能，功能元件可以包括真空規、抽氣元件和充氣元件等。主體部113上開設有用於晶圓300進出的傳片口，上述功能組件均設置於主體部113，會佔用傳片口的空間。為此，在另一種可選的實施例中，如圖4所示，底板114上可以開設有第一接口1141，該第一接口1141與容納腔111相連通，第一接口1141用於安裝功能元件。此方案中，底板114上開設第一接口1141，可以將上述功能元件中的至少一部分安裝至底板114上，從而可以避免因設置於主體部113上的功能元件過多而導致的佔用傳片口的空間的問題，進而使得主體部113上有足夠的空間設計較大的傳片口。In the above-mentioned embodiment, the preloading chamber 100 is provided with functional elements, which can realize various functions of the preloading chamber 100 , and the functional elements may include vacuum gauges, air extraction elements, and inflation elements. The main body portion 113 is provided with a wafer transfer port for entering and exiting the wafer 300 . The above-mentioned functional components are all disposed in the main body portion 113 and occupy the space of the wafer transfer port. To this end, in another optional embodiment, as shown in FIG. 4 , a first interface 1141 may be opened on the bottom plate 114 , the first interface 1141 communicates with the accommodating cavity 111 , and the first interface 1141 is used for the installation function element. In this solution, a first interface 1141 is provided on the bottom plate 114, and at least a part of the above-mentioned functional components can be installed on the bottom plate 114, so as to avoid occupying the space of the film transfer port due to too many functional components disposed on the main body portion 113. Therefore, there is enough space on the main body portion 113 to design a larger film transfer opening.

例如，第一接口1141可以用於安裝充氣元件，當然，第一接口1141還可以用於安裝其他功能元件，本文不作限制。For example, the first interface 1141 can be used to install an inflatable element. Of course, the first interface 1141 can also be used to install other functional elements, which is not limited herein.

可選地，第一接口1141的具體尺寸可以根據所安裝的功能元件的外形尺寸靈活選擇，本文不作限制。Optionally, the specific size of the first interface 1141 may be flexibly selected according to the external size of the installed functional element, which is not limited herein.

在另一種可選的實施例中，主體部113的側壁可以開設有相對設置的大氣傳片口和真空傳片口，大氣傳片口與大氣傳輸腔室相連通，真空傳片口與真空傳輸腔室200相連通。大氣傳片口的頂面和真空傳片口的頂面均與蓋體112的底面相平齊，且大氣傳片口的底面和真空傳片口的底面均與底板114的頂面相平齊。此方案中，大氣傳片口頂面至大氣傳片口底面的距離為大氣傳片口的高度，真空傳片口頂面至真空傳片口底面的距離為真空傳片口的高度，大氣傳片口的高度和真空傳片口的高度與容納腔111的高度相同，此時，整個容納腔111均用於晶圓300進行傳片，從而使得晶圓300具有較大的傳片空間，同時，容納腔111的高度與傳片口位置相當，能夠進一步減小預裝載腔室100的容積，能夠進一步縮短預裝載腔室100的充氣和抽氣時間。In another optional embodiment, the side wall of the main body portion 113 may be provided with an air transfer port and a vacuum transfer port opposite to each other, the air transfer port is communicated with the atmospheric transfer chamber, and the vacuum transfer port is connected with the vacuum transfer chamber 200 Pass. The top surface of the atmospheric film transfer port and the top surface of the vacuum film transfer port are both flush with the bottom surface of the cover body 112 , and the bottom surface of the atmospheric film transfer port and the bottom surface of the vacuum film transfer port are both flush with the top surface of the bottom plate 114 . In this scheme, the distance from the top surface of the atmospheric film transfer port to the bottom surface of the atmospheric film transfer port is the height of the atmospheric film transfer port, and the distance from the top surface of the vacuum film transfer port to the bottom surface of the vacuum film transfer port is the height of the vacuum film transfer port. The height of the wafer opening is the same as the height of the accommodating cavity 111. At this time, the entire accommodating cavity 111 is used for the wafer 300 to be transferred, so that the wafer 300 has a larger space for wafer transfer. The positions of the die openings are equivalent, so that the volume of the preloading chamber 100 can be further reduced, and the inflation and pumping time of the preloading chamber 100 can be further shortened.

進一步地，大氣傳片口的中心軸線與真空傳片口的中心軸線的交點與晶圓支撐架120（即，承載台121）用於承載晶圓300的承載面中心之間的連線垂直於該承載面。也就是說，晶圓300在預裝載腔室100與真空傳輸腔室200之間的傳輸路徑沿真空傳片口的中心軸線傳輸，進而實現晶圓300在預裝載腔室100與真空傳輸腔室200之間的直進直出，進而使得晶圓300在進出預裝載腔室100時無需調整位置，提高晶圓300的傳輸效率。Further, the connection line between the intersection of the central axis of the air transfer port and the central axis of the vacuum transfer port and the center of the carrier surface of the wafer support frame 120 (ie, the carrier table 121 ) for carrying the wafer 300 is perpendicular to the carrier. noodle. That is to say, the transfer path of the wafer 300 between the preloading chamber 100 and the vacuum transfer chamber 200 is along the central axis of the vacuum transfer port, thereby realizing the transfer of the wafer 300 between the preloading chamber 100 and the vacuum transfer chamber 200 . There is no need to adjust the position of the wafers 300 when entering and leaving the preloading chamber 100 , thereby improving the transfer efficiency of the wafers 300 .

為了方便對容納腔111內的晶圓300進行觀測，在另一種可選的實施例中，蓋體112可以開設有第一觀察窗1121，主體部113的側壁可以開設有第二觀察窗1122，第一觀察窗1121和第二觀察窗1122均可以用於觀察晶圓300在容納腔111內的位置。此方案中，第一觀察窗1121可以對晶圓300的中心區域進行觀測，第二觀察窗1122可以對晶圓300的邊緣進行觀測，通過第一觀察窗1121和第二觀察窗1122能夠準確的觀測晶圓300在容納腔111內的位置，從而便於對晶圓300的位置進行調整維護。In order to facilitate the observation of the wafer 300 in the accommodating cavity 111, in another optional embodiment, the cover body 112 may be provided with a first observation window 1121, and the side wall of the main body 113 may be provided with a second observation window 1122. Both the first observation window 1121 and the second observation window 1122 can be used to observe the position of the wafer 300 in the accommodating chamber 111 . In this solution, the first observation window 1121 can observe the central area of the wafer 300, and the second observation window 1122 can observe the edge of the wafer 300. The first observation window 1121 and the second observation window 1122 can accurately observe the The position of the wafer 300 in the accommodating chamber 111 is observed, so as to facilitate adjustment and maintenance of the position of the wafer 300 .

上述實施例中，底板114上安裝有晶圓支撐架120，因此底板114與主體部113的安裝位置精度較低，有可能影響晶圓支撐架120在容納腔111內的安裝精度。基於此，在另一種可選的實施例中，如圖8所示，底板114位於主體部113內的貫通腔內，且底板114的外周壁上設置有定位凸部1142，且對應地在主體部113的底壁上設置有定位凹部，該定位凹部與定位凸部1142彼此相對的表面相抵，且定位凸部1142與主體部113可拆卸連接。通過使定位凹部與定位凸部1142相配合，可以定位底板114與主體部113的安裝位置，從而提高底板114與主體部113的安裝精度，進而提高晶圓300支撐架120在容納腔111內的安裝精度。同時，底板114通過貫通腔插入主體部113內，可使容納腔111的深度分別與大氣傳片口和真空傳片口的上下位置平齊，進一步減小了容納腔的容積。In the above embodiment, the wafer support frame 120 is mounted on the bottom plate 114 , so the mounting position accuracy of the bottom plate 114 and the main body 113 is low, which may affect the mounting accuracy of the wafer support frame 120 in the accommodating cavity 111 . Based on this, in another optional embodiment, as shown in FIG. 8 , the bottom plate 114 is located in the through cavity in the main body portion 113 , and the outer peripheral wall of the bottom plate 114 is provided with a positioning convex portion 1142 , which is correspondingly located on the main body portion 113 . The bottom wall of the portion 113 is provided with a positioning concave portion, the positioning concave portion and the opposite surfaces of the positioning convex portion 1142 abut against each other, and the positioning convex portion 1142 is detachably connected to the main body portion 113 . By matching the positioning concave portion with the positioning convex portion 1142 , the installation positions of the bottom plate 114 and the main body portion 113 can be positioned, thereby improving the installation accuracy of the bottom plate 114 and the main body portion 113 , and further improving the mounting position of the wafer 300 support frame 120 in the accommodating cavity 111 . installation accuracy. At the same time, the bottom plate 114 is inserted into the main body 113 through the through cavity, so that the depth of the accommodating cavity 111 can be flush with the upper and lower positions of the atmospheric film transfer port and the vacuum chip transfer port, which further reduces the volume of the accommodating cavity.

進一步地，主體部113與蓋體112之間也可以採用與上述定位凹部與定位凸部1142相類似的定位結構定位，本文在此不再贅述。Further, a positioning structure similar to the positioning concave portion and the positioning convex portion 1142 described above can also be used for positioning between the main body portion 113 and the cover body 112 , and details are not described herein again.

為了提高腔室本體110的裝配的密封性能，在另一種可選的實施例中，蓋體112與主體部113彼此相對的表面之間可以設有第一密封件，此時，第一密封件能夠封堵蓋體112與主體部113之間的間隙，從而提高蓋體112與主體部113之間的密封性能，進而提高腔室本體110的密封性能。In order to improve the sealing performance of the assembly of the chamber body 110, in another optional embodiment, a first sealing member may be provided between the surfaces of the cover body 112 and the main body portion 113 facing each other. In this case, the first sealing member The gap between the cover body 112 and the main body part 113 can be blocked, so as to improve the sealing performance between the cover body 112 and the main body part 113 , and further improve the sealing performance of the chamber body 110 .

當然，底板114與主體部113之間彼此相對表面之間也可以設有第二密封件。具體地，如圖8所示，定位凹部與定位凸部1142之間設有第二密封件160。此時，第二密封件160能夠封堵定位凹部與定位凸部1142之間的間隙，從而提高底板114與主體部113之間的密封性能，進一步提高腔室本體110的密封性能。Of course, a second sealing member may also be provided between the surfaces of the bottom plate 114 and the main body portion 113 facing each other. Specifically, as shown in FIG. 8 , a second sealing member 160 is provided between the positioning concave portion and the positioning convex portion 1142 . At this time, the second sealing member 160 can block the gap between the positioning concave portion and the positioning convex portion 1142 , thereby improving the sealing performance between the bottom plate 114 and the main body portion 113 and further improving the sealing performance of the chamber body 110 .

在一種可選的實施例中，晶圓支撐架120為至少兩個，且沿圓周方向間隔設置，並且，每個晶圓支撐架120上的各個承載台121與其他的晶圓支撐架120上的各個承載台121一一對應地同層設置，同一層的承載台121用於共同支撐晶圓300。例如，如圖9所示，晶圓支撐架120為三個，且沿圓周方向間隔設置，並且，其中一個晶圓支撐架120上的各個承載台121與其餘兩個晶圓支撐架120上的各個承載台121一一對應地同層設置。通過採用由多個晶圓支撐架120構成的分體式支架，可以在保證對晶圓300穩定支撐的基礎上，減小支架整體體積，從而使得晶圓支撐架120佔用容納腔111的空間較小，更有利於預裝載腔室100傳輸晶圓300。In an optional embodiment, there are at least two wafer support frames 120 , and they are arranged at intervals along the circumferential direction, and each carrier 121 on each wafer support frame 120 is connected to other wafer support frames 120 . Each of the supporting platforms 121 of the 2000 is provided on the same layer in a one-to-one correspondence, and the supporting platforms 121 on the same layer are used to jointly support the wafer 300 . For example, as shown in FIG. 9 , there are three wafer support frames 120 , which are arranged at intervals in the circumferential direction, and each of the supporting platforms 121 on one wafer support frame 120 and the other two wafer support frames 120 are arranged at intervals. Each bearing platform 121 is arranged on the same layer in a one-to-one correspondence. By adopting a split-type bracket composed of a plurality of wafer supports 120, the overall volume of the bracket can be reduced on the basis of ensuring stable support for the wafers 300, so that the wafer support 120 occupies less space in the accommodating cavity 111 , which is more favorable for the preloading chamber 100 to transfer the wafer 300 .

當然，在實際應用中，晶圓支撐架120也可以為一個完整的支架，例如，支撐架本體採用整體式結構，且每個承載台均包括連接在該支撐架本體上的多個子承載台，多個子承載台沿圓周方向間隔，且同層設置，用於共同支撐晶圓300。或者，每個承載台也可以採用整體式結構，且在每個承載臺上設置有避讓開口，用以供晶圓300和機械手進出。Of course, in practical applications, the wafer support frame 120 can also be a complete support frame. For example, the support frame body adopts an integral structure, and each bearing platform includes a plurality of sub-bearing platforms connected to the support frame body. The plurality of sub-carriers are spaced apart along the circumferential direction and are arranged on the same layer to jointly support the wafer 300 . Alternatively, each carrying table may also adopt an integral structure, and each carrying table is provided with an escape opening for allowing the wafer 300 and the robot to enter and exit.

在另一種可選的實施例中，如圖8所示，晶圓支撐架120還包括定位件150，且對應地分別在支撐架本體122與腔室本體110彼此相對的表面上設置有定位孔，定位件150的兩端分別位於支撐架本體122與腔室本體110上的定位孔中。此方案能夠提高晶圓支撐架120與腔室本體110的安裝精度，進而提高預裝載腔室100的裝配精度。可選地，定位件150可以為定位銷，當然還可以採用其他定位結構，本文不作限制。In another optional embodiment, as shown in FIG. 8 , the wafer support frame 120 further includes a positioning member 150 , and correspondingly, positioning holes are respectively provided on the surfaces of the support frame body 122 and the chamber body 110 opposite to each other. , the two ends of the positioning member 150 are respectively located in the positioning holes on the support frame body 122 and the chamber body 110 . This solution can improve the installation accuracy of the wafer support frame 120 and the chamber body 110 , thereby improving the assembly accuracy of the preloading chamber 100 . Optionally, the positioning member 150 may be a positioning pin, of course, other positioning structures may also be used, which are not limited herein.

基於本發明上述任一實施例的預裝載腔室100，本發明實施例還公開一種半導體製程平臺，所公開的半導體製程平臺包括至少一個上述任一實施例的預裝載腔室100。Based on the preloading chamber 100 of any of the above embodiments of the present invention, an embodiment of the present invention further discloses a semiconductor process platform, the disclosed semiconductor process platform includes at least one preloading chamber 100 of any of the above-mentioned embodiments.

本發明公開的半導體製程平臺還包括真空傳輸腔室200，真空傳輸腔室200的傳輸口和預裝載腔室100的真空傳片口相連通。The semiconductor process platform disclosed in the present invention further includes a vacuum transfer chamber 200 , and the transfer port of the vacuum transfer chamber 200 is communicated with the vacuum transfer port of the preloading chamber 100 .

在一種可選的實施例中，真空傳輸腔室200的傳輸口的中心軸線與對應連通的真空傳片口的中心軸線相重合。此方案中，晶圓300在預裝載腔室100與真空傳輸腔室200之間的傳輸路徑沿真空傳片口的中心軸線傳輸，進而實現晶圓300在預裝載腔室100與真空傳輸腔室200之間的直進直出，進而使得晶圓300在進出預裝載腔室100時無需調整位置，提高晶圓300的傳輸效率。In an optional embodiment, the central axis of the transfer port of the vacuum transfer chamber 200 is coincident with the central axis of the corresponding vacuum transfer port. In this solution, the transfer path of the wafer 300 between the preloading chamber 100 and the vacuum transfer chamber 200 is along the central axis of the vacuum transfer port, so that the wafer 300 is transferred between the preloading chamber 100 and the vacuum transfer chamber 200 There is no need to adjust the position of the wafers 300 when entering and leaving the preloading chamber 100 , thereby improving the transfer efficiency of the wafers 300 .

可選地，真空傳輸腔室200設置有門閥210，預裝載腔室100可以通過螺栓與門閥210固定連接，此時，真空傳輸腔室200與預裝載腔室100可拆卸連接。Optionally, the vacuum transfer chamber 200 is provided with a gate valve 210 , and the preloading chamber 100 can be fixedly connected with the gate valve 210 by bolts. At this time, the vacuum transfer chamber 200 is detachably connected with the preloading chamber 100 .

在另一種可選的實施例中，半導體製程平臺還包括大氣傳輸腔室，大氣傳輸腔室的傳輸口和預裝載腔室100的大氣傳片口相連通，且大氣傳輸腔室的傳輸口的中心軸線與對應連通的大氣傳片口的中心軸線相重合，此方案能夠實現晶圓300在預裝載腔室100與大氣傳輸腔室之間的直進直出，進而提高晶圓300的傳輸效率。In another optional embodiment, the semiconductor process platform further includes an atmosphere transport chamber, the transport port of the atmosphere transport chamber is communicated with the atmosphere sheet transport port of the preloading chamber 100 , and the center of the transport port of the atmosphere transport chamber The axis coincides with the central axis of the corresponding communicating air transfer port. This solution can realize the straight in and straight out of the wafer 300 between the preloading chamber 100 and the air transfer chamber, thereby improving the transfer efficiency of the wafer 300 .

在另一種可選的實施例中，預裝載腔室100的數量可以為兩個，兩個預裝載腔室100的大氣傳片口的中心軸線相平行。此時，半導體製程平臺的兩個預裝載腔室100可以交替使用，進而能夠提高半導體加工平臺的加工效率。In another optional embodiment, the number of the preloading chambers 100 may be two, and the central axes of the air transfer openings of the two preloading chambers 100 are parallel. At this time, the two preloading chambers 100 of the semiconductor process platform can be used alternately, thereby improving the processing efficiency of the semiconductor process platform.

前述內容概括數項實施例之特徵，使得熟習此項技術者可更佳地理解本揭露之態樣。熟習此項技術者應瞭解，其等可容易地使用本揭露作為用於設計或修改用於實行本文仲介紹之實施例之相同目的及/或達成相同優點之其他製程及結構之一基礎。熟習此項技術者亦應瞭解，此等等效構造不背離本揭露之精神及範疇，且其等可在不背離本揭露之精神及範疇之情況下在本文中作出各種改變、置換及更改。The foregoing summarizes features of several embodiments so that those skilled in the art may better understand aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments described herein. Those skilled in the art should also understand that these equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they can make various changes, substitutions, and alterations herein without departing from the spirit and scope of the present disclosure.

100:預裝載腔室 110:腔室本體 111:容納腔 112:蓋體 113:主體部 114:底板 120:晶圓支撐架 121a:第一承載台 121:承載台 121b:第二承載台 122:支撐架本體 130:固定件 140:支架驅動裝置 150:定位件 160:第二密封件 200:真空傳輸腔 210:門閥 300:晶圓 1121:第一觀察窗 1122:第二觀察窗 1141:第一接口 1142:定位凸部 1211:避讓部 1221:安裝孔 100: Preloading the chamber 110: Chamber body 111: accommodating cavity 112: Cover 113: main body 114: Bottom plate 120: Wafer support frame 121a: The first bearing platform 121: Bearing platform 121b: Second carrying platform 122: Support frame body 130: Fixing parts 140: Bracket drive 150: Positioning pieces 160: Second seal 200: Vacuum transfer chamber 210: Gate valve 300: Wafer 1121: The first observation window 1122: Second viewing window 1141: The first interface 1142: Positioning convex part 1211: Avoidance Department 1221: Mounting holes

當結合附圖閱讀時，從以下詳細描述最佳理解本揭露之態樣。應注意，根據產業中之標準實踐，各種構件未按比例繪製。事實上，為了論述的清楚起見可任意增大或減小各種構件之尺寸。 圖1為本發明實施例公開的半導體製程平臺的結構示意圖； 圖2~圖4為本發明實施例公開的預裝載腔室的軸測圖； 圖5為本發明實施例公開的預裝載腔室的俯視圖； 圖6為本發明實施例公開的預裝載腔室的仰視圖； 圖7至圖9為本發明實施例公開的預裝載腔室的局部結構的剖視圖。 Aspects of the present disclosure are best understood from the following detailed description when read in conjunction with the accompanying drawings. It should be noted that in accordance with standard practice in the industry, the various components are not drawn to scale. In fact, the dimensions of the various components may be arbitrarily increased or decreased for clarity of discussion. FIG. 1 is a schematic structural diagram of a semiconductor process platform disclosed in an embodiment of the present invention; 2 to 4 are axonometric views of a preloading chamber disclosed in an embodiment of the present invention; 5 is a top view of a preloading chamber disclosed in an embodiment of the present invention; 6 is a bottom view of a preloading chamber disclosed in an embodiment of the present invention; 7 to 9 are cross-sectional views of partial structures of a preloading chamber disclosed in an embodiment of the present invention.

113:主體部 113: main body

114:底板 114: Bottom plate

120:晶圓支撐架 120: Wafer support frame

121:承載台 121: Bearing platform

121a:第一承載台 121a: The first bearing platform

121b:第二承載台 121b: Second carrying platform

122:支撐架本體 122: Support frame body

130:固定件 130: Fixing parts

150:定位件 150: Positioning pieces

160:第二密封件 160: Second seal

1142:定位凸部 1142: Positioning convex part

1211:避讓部 1211: Avoidance Department

1221:安裝孔 1221: Mounting holes

Claims (14)

一種預裝載腔室，包括一腔室本體和一晶圓支撐架； 該腔室本體開設有一容納腔，該晶圓支撐架位於該容納腔內，該晶圓支撐架包括沿豎直方向間隔設置的多個用於承載晶圓的一承載台和與該多個承載台連接的一支撐架本體，以及一固定件，其中，該多個承載台中有至少一者位於該支撐架本體的上方，且開設有能夠使該固定件穿過的一避讓部；該固定件用於將該支撐架本體與該腔室本體固定連接。 A preloading chamber includes a chamber body and a wafer support frame; The chamber body defines an accommodating cavity, and the wafer supporting frame is located in the accommodating cavity. The wafer supporting frame includes a plurality of supporting platforms for supporting wafers arranged at intervals along the vertical direction, and a plurality of supporting platforms for supporting the wafers. A support frame body connected to the platform, and a fixing piece, wherein, at least one of the plurality of bearing platforms is located above the support frame body, and is provided with an escape portion through which the fixing piece can pass; the fixing piece It is used for fixedly connecting the support frame body with the chamber body. 如請求項1所述的預裝載腔室，其中該晶圓支撐架為至少兩個，且沿圓周方向間隔設置，並且，每個該晶圓支撐架上的各個該承載台與其他的該晶圓支撐架上的各個該承載台一一對應地同層設置，同一層的該承載台用於共同支撐該晶圓。The preloading chamber according to claim 1, wherein there are at least two wafer support frames and are arranged at intervals along the circumferential direction, and each of the supporting platforms on each of the wafer support frames and the other wafer supports Each of the bearing platforms on the circular support frame is arranged on the same layer in a one-to-one correspondence, and the bearing platforms on the same layer are used to jointly support the wafer. 如請求項1或2所述的預裝載腔室，其中該支撐架本體上，且位於該避讓部的下方開設有一安裝孔；該固定件為一緊固螺釘，該緊固螺釘一端穿過該安裝孔，並與該腔室本體螺紋連接。The preloading chamber according to claim 1 or 2, wherein a mounting hole is defined on the support frame body and below the avoidance portion; the fixing member is a fastening screw, and one end of the fastening screw passes through the Mounting holes are threaded with the chamber body. 如請求項1或2所述的預裝載腔室，其中該晶圓支撐架還包括一定位件，且對應地分別在該支撐架本體與該腔室本體彼此相對的表面上設置有一定位孔，該定位件的兩端分別位於該支撐架本體與該腔室本體上的該定位孔中。The preloading chamber according to claim 1 or 2, wherein the wafer support frame further comprises a positioning member, and a positioning hole is correspondingly provided on the surfaces of the support frame body and the chamber body facing each other, respectively, Two ends of the positioning member are respectively located in the positioning holes on the support frame body and the chamber body. 如請求項1或2所述的預裝載腔室，其中該腔室本體包括一主體部、一底板和一蓋體，其中，該主體部內設有在豎直方向貫通該主體部的一貫通腔，該蓋體和該底板分別可拆卸地設置於該主體部的上端面和下端面，且該蓋體的底面、該主體部構成該貫通腔的內壁和該底板的頂面共同圍合形成該容納腔，該固定件用於將該支撐架本體與該底板固定連接。The preloading chamber according to claim 1 or 2, wherein the chamber body comprises a main body, a bottom plate and a cover, wherein the main body is provided with a through-through penetrating through the main body in the vertical direction cavity, the cover body and the bottom plate are respectively detachably arranged on the upper end surface and the lower end surface of the main body part, and the bottom surface of the cover body, the inner wall of the main body part constituting the through-cavity and the top surface of the bottom plate are jointly enclosed The accommodating cavity is formed, and the fixing member is used for fixedly connecting the support frame body and the bottom plate. 如請求項5所述的預裝載腔室，其中該底板內設置有一冷卻裝置，該冷卻裝置用於對置於該承載臺上的晶圓進行冷卻；和/或 該底板內設置有加熱裝置，該加熱裝置用於對置於該承載臺上的該晶圓進行加熱。 The preloading chamber according to claim 5, wherein a cooling device is provided in the bottom plate, and the cooling device is used to cool the wafers placed on the carrier; and/or A heating device is arranged in the bottom plate, and the heating device is used for heating the wafer placed on the carrying table. 如請求項5所述的預裝載腔室，其中該主體部的側壁開設有相對設置的一大氣傳片口和一真空傳片口，該大氣傳片口和該真空傳片口均與該容納腔相連通，該大氣傳片口的頂面和該真空傳片口的頂面均與該蓋體的底面相平齊，且該大氣傳片口的底面和該真空傳片口的底面均與該底板的頂面相平齊。The preloading chamber according to claim 5, wherein a side wall of the main body portion is provided with an atmosphere film transfer port and a vacuum film transfer port oppositely disposed, and both the atmospheric film transfer port and the vacuum film transfer port are communicated with the accommodating cavity, The top surface of the atmospheric film transfer port and the top surface of the vacuum film transfer port are both flush with the bottom surface of the cover body, and the bottom surface of the atmospheric film transfer port and the bottom surface of the vacuum film transfer port are both flush with the top surface of the bottom plate. 如請求項7所述的預裝載腔室，其中該大氣傳片口的中心軸線與該真空傳片口的中心軸線的交點與該承載台用於承載該晶圓的承載面中心之間的連線垂直於該承載面。The preloading chamber as claimed in claim 7, wherein the intersection of the central axis of the atmospheric wafer transfer port and the central axis of the vacuum wafer transfer port is perpendicular to the line connecting the center of the carrier surface of the carrier table for carrying the wafer on the bearing surface. 如請求項5所述的預裝載腔室，其中該蓋體開設有一第一觀察窗，該主體部的側壁開設有一第二觀察窗，該第一觀察窗和該第二觀察窗均用於觀察該晶圓在該容納腔內的位置。The preloading chamber as claimed in claim 5, wherein the cover body defines a first observation window, the side wall of the main body defines a second observation window, and both the first observation window and the second observation window are used for observation The position of the wafer in the receiving cavity. 如請求項5所述的預裝載腔室，其中該底板位於該貫通腔內，且該底板的外周壁上設置有一定位凸部，且對應地在該主體部的底壁上設置有一定位凹部，該定位凸部與該定位凹部彼此相對的表面相抵，且該定位凸部與該主體部可拆卸連接。The preloading chamber according to claim 5, wherein the bottom plate is located in the through cavity, a positioning convex portion is provided on the outer peripheral wall of the bottom plate, and a positioning concave portion is correspondingly provided on the bottom wall of the main body portion, The opposite surfaces of the positioning convex portion and the positioning concave portion abut against each other, and the positioning convex portion and the main body portion are detachably connected. 如請求項10所述的預裝載腔室，其中該蓋體與該主體部彼此相對的表面之間設有一第一密封件；和/或， 該定位凸部與該定位凹部彼此相對的表面之間設有一第二密封件。 The preloading chamber of claim 10, wherein a first sealing member is provided between the surfaces of the cover body and the main body portion facing each other; and/or, A second sealing member is provided between the surfaces of the positioning convex portion and the positioning concave portion facing each other. 一種半導體製程平臺，包括一真空傳輸腔室、一大氣傳輸腔室和至少一個請求項7至11中任一項所述的預裝載腔室，該真空傳輸腔室上的一傳輸口與該真空傳片口相連通，該大氣傳輸腔室的一傳輸口與該大氣傳片口相連通。A semiconductor process platform, comprising a vacuum transfer chamber, an atmosphere transfer chamber and at least one preloading chamber according to any one of claims 7 to 11, a transfer port on the vacuum transfer chamber and the vacuum transfer chamber The film transfer port is communicated, and a transfer port of the atmospheric transmission chamber is communicated with the atmospheric film transfer port. 如請求項12所述的半導體製程平臺，其中該真空傳輸腔室的該傳輸口的中心軸線與對應連通的該真空傳片口的中心軸線相重合； 該大氣傳輸腔室的該傳輸口的中心軸線與對應連通的該大氣傳片口的中心軸線相重合。 The semiconductor process platform of claim 12, wherein the central axis of the transfer port of the vacuum transfer chamber coincides with the central axis of the corresponding vacuum transfer port; The central axis of the transmission port of the air transmission chamber coincides with the central axis of the corresponding communication air transmission port. 如請求項12或13所述的半導體製程平臺，其中該預裝載腔室的數量為兩個，兩個該預裝載腔室的該大氣傳片口的中心軸線相平行。The semiconductor process platform as claimed in claim 12 or 13, wherein the number of the preloading chambers is two, and the central axes of the air transfer openings of the two preloading chambers are parallel.
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