CN104795347B - Wafer support device and degassing processing chamber - Google Patents
Wafer support device and degassing processing chamber Download PDFInfo
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- CN104795347B CN104795347B CN201410031011.6A CN201410031011A CN104795347B CN 104795347 B CN104795347 B CN 104795347B CN 201410031011 A CN201410031011 A CN 201410031011A CN 104795347 B CN104795347 B CN 104795347B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The present invention, which provides a kind of wafer support device and degassing processing chamber, wafer support device, includes fixed part, connecting portion and supporting part；One end of the connecting portion is connected with fixed part, and the other end of the connecting portion is connected with supporting part；The boss for being used to support wafer is provided with the supporting part；The supporting part is additionally provided with limiting stand；The limiting stand sets the other end away from the boss；The one side of the limiting stand towards the boss is provided with an inclined-plane.The wafer support device of the present invention and the contact area of wafer are big, there is provided limiting stand at the same time to avoid wafer that big offset occurs, the offset for the wafer placed on wafer support device in the present invention is in the range of controllable and permission, various sizes of wafer support device can be designed according to different wafers, it is applied widely.
Description
Technical field
The present invention relates to field of semiconductor manufacture, more particularly to a kind of wafer support device and degassing processing chamber.
Background technology
In semiconductor integrated circuit physical vapor deposition（PVD）In manufacturing process, including four kinds of technological processes：It is degassing, pre-
Cleaning, barrier film deposition, inculating crystal layer thin film deposition.The effect of wherein degassing technique is the mode utilized to wafer heating,
The vapor or other volatilizable gases that wet-cleaning and surrounding environment introduce are removed, is the critical process for influencing yield of devices,
Good degassing technique can obtain good film adherability, good material conformability, good temperature control.Existing degassing
Equipment mode of heating has three kinds：Light bulb heat radiation type, pedestal heated type and both modes for being combined.No matter which kind of side used
Formula, is required for the supporting mechanism of thimble class to transmit wafer in degassing processing chamber, during heating process, wafer or puts
Put on supporting mechanism or be placed on pedestal, and for wafer in itself for, different heating-up temperatures can bring wafer micro-
Change in sight, such as the reduction of wafer rear friction coefficient.
Fig. 1 and Fig. 2 is the placement status using wafer 2 during light bulb heat radiation mode of heating in degassing processing chamber 1, is schemed
3 be the structure diagram of thimble 11 of the prior art.In the prior art in heating process, crystalline substance is supported by three thimbles 11
Circle 2 simultaneously ensures the static of wafer 2.
In semiconductor integrated technique, 1 temperature of degassing processing chamber is sometimes for being heated to 180 DEG C of even more highs, Er Qiexu
Carry out long-time heat preservation.Change can be produced on wafer 2 is microcosmic at this temperature, the change for influencing maximum is exactly friction coefficient
It can reduce.On the other hand, board is impossible to be adjusted to abswolute level in any factory, and three thimbles 11 can not possibly be in absolute
Level, more or less all can some inclinations, the processing chamber of board can use the vacuum equipments such as cold pump again, when the vacuum such as cold pump are set
Vibrations can be produced during received shipment row.Since existing degassing processing chamber is just with three support wafers 2 of thimbles 11, thimble 11 and crystalline substance
The contact area of circle 2 is very small, and after wafer 2 is heated, friction coefficient changes, and the vibrations of such board may result in crystalline substance
Circle 2 deviates on three ejector pin mechanisms, may cause 2 offset of wafer excessive in technique soaking time, 2 offset of wafer exceedes
A certain range, may occur after wafer 2 is spread out of from degassing processing chamber 1 after technique is completed to touch with cavity wall or other positions
Hit, or occur to come off on a robotic arm when wafer 2 is spread out of, even result in wafer and crush.
Therefore it is those skilled in the art's problem to be solved to provide a kind of new wafer support device.
The content of the invention
It is above-mentioned in order to overcome the shortcomings of, the object of the present invention is to provide a kind of new wafer support device and including the support
The degassing processing chamber of device.
Technical scheme is as follows：
A kind of wafer support device, including fixed part, connecting portion and supporting part；One end of the connecting portion connects with fixed part
Connect, the other end of the connecting portion is connected with supporting part；The boss for being used to support wafer is provided with the supporting part；The branch
Support part is additionally provided with limiting stand；The limiting stand sets the other end away from the boss；The limiting stand is towards the boss
One side be provided with an inclined-plane.
In one of the embodiments, the supporting part is horizontally disposed with；The surface of the boss is plane.
In one of the embodiments, the one side of the limiting stand towards the boss is additionally provided with vertical plane and cambered surface；
The height of the vertical plane is more than or equal to the sum of the height of the boss and the thickness of the wafer；
The both ends of the cambered surface are seamlessly transitted with the vertical plane and the inclined-plane respectively.
In one of the embodiments, the inclination angle on the inclined-plane is less than 20 degree.
In one of the embodiments, the connecting portion and the fixed part vertical connection, the supporting part and the company
Socket part vertical connection.
The present invention also provides a kind of degassing processing chamber, including above-described wafer support device；
The fixed part of the wafer support device is fixed on the bottom of the degassing processing chamber.
In one of the embodiments, the wafer support device is two or three；
The outer section of the cambered surface of the two or three wafer support devices is on same first circumference；
The center of the boss of the two or three wafer support devices is on same second circumference；
When wafer is placed on the biography piece position of degassing processing chamber, the radius of first circumference is more than the wafer
Radius；The radius of second circumference is less than the radius of the wafer.
In one of the embodiments, when wafer is placed on the biography piece position of degassing processing chamber, second circumference
Radius for the wafer radius 1/2.
In one of the embodiments, the distance between the vertical plane and the boss are less than or equal to the thickness of the wafer
Degree.
In one of the embodiments, when wafer is placed on the biography piece position of degassing processing chamber, two or three
The outer end of the cambered surface of the wafer support device is on same 3rd circumference；Two or three wafer support devices
The inner of cambered surface is on same 4th circumference；
The radius of first circumference is more than the radius of the 4th circumference；
The radius of 4th circumference is more than the radius of the wafer.
The beneficial effects of the invention are as follows：The wafer support device of the present invention and the contact area of wafer are big, are provided with the same time
Limiting stand avoids wafer from occurring big offset, the offset of the wafer placed on the wafer support device in the present invention controllable and
In the range of permission, various sizes of wafer support device can be designed according to different wafers, it is applied widely.
Brief description of the drawings
In order to make the object, technical solution and advantage of the wafer support device of the present invention and degassing processing chamber clearer
Understand, below in conjunction with specific drawings and the specific embodiments, the present invention will be described in further detail.
Fig. 1 is the overall schematic that degassing processing chamber places after wafer in the prior art；
Fig. 2 is the side view of Fig. 1；
Fig. 3 is thimble structure schematic diagram of the prior art；
Fig. 4 is the overall schematic of the supporting structure of the wafer support device of the present invention；
Fig. 5 is the sectional view of the supporting structure shown in Fig. 4；
Fig. 6 is the partial enlarged view of the supporting structure shown in Fig. 4；
Fig. 7 is that the wafer support device of the present invention is applied to the overall structure diagram of degassing processing chamber；
Fig. 8 is the side view of the degassing processing chamber shown in Fig. 7.
Embodiment
Below with reference to the accompanying drawings and the present invention will be described in detail in conjunction with the embodiments.It should be noted that in the feelings not conflicted
Under condition, the feature in embodiment and embodiment in the application can be mutually combined.
Referring to Fig. 4 to Fig. 6, a kind of wafer support device 100, including fixed part 110, connecting portion are present embodiments provided
120 and supporting part 130；One end of the connecting portion 120 is connected with fixed part 110, the other end of the connecting portion 120 and support
Portion 130 connects；The supporting part 130 is horizontally disposed, and the boss for being used to support wafer is additionally provided with the supporting part 130
131, limiting stand 140 is additionally provided with the other end of the remote boss of the supporting part 130；The face of the limiting stand 140
To the one side of the boss（I.e. close to the face of boss side）It is provided with an inclined-plane 143.
Supporting structure in the present embodiment includes fixed part, connecting portion, supporting part, and wherein fixed part is mainly used for fixed branch
Support structure, is provided with mounting hole on the fixed part of this implementation, and through mounting hole screw can be fixed on degassing by supporting structure
In processing chamber or other devices.Connecting portion is mainly used for connecting portion and supporting part.Supporting part is the main of support wafer
Component, therefore supporting part should be horizontally disposed with, and in order to reduce the contact area of supporting part and wafer, avoid wafer in heating process
In heat derives are occurred by thermal loss by supporting structure, the present embodiment is provided with convex with wafer contacts on supporting part
Platform, when wafer level is placed, wafer is only in contact with boss, and the position for working as wafer tilts or offset, supporting part
Other parts and wafer contacts, ensure that wafer can be placed in support device and will not fall down.The main function of limiting stand is to keep away
Exempt from wafer and big offset occurs.Wafer support device in the present embodiment is provided with limiting stand, it is possible to avoids in processing chamber
The problem of wafer offset is excessive when shaking.
Preferably, as a kind of embodiment, the supporting part 130 is horizontally disposed, and the surface of the boss 131 is
Plane, the surface area of the boss 131 can be set according to being actually needed, and when wafer needs heat transfer, the surface area of boss is most
It is the 0.5% to 1.5% of the surface area of the wafer well；When wafer need not conduct heat, the minimum wafer table of surface area of boss
The 0.5% of area, maximum can be equivalent to the surface area of the inscribed circle of supporting part 130.Connecing for boss and wafer was so both avoided
Contacting surface accumulates degassing process excessive and that influence wafer, turn avoid the contact area of wafer and boss and too small is difficult to wafer
Keep balance.The surface of boss causes the contact area of boss and wafer to become larger for plane, and the surface of thimble is in the prior art
Cambered surface, then when wafer is placed and thimble is point contact, is so difficult to keep balance and easily shift；And the present embodiment convexity
For plane, then the contact area of boss and wafer becomes larger on the surface of platform, and contact of the boss with wafer is contacted for face or line contacts, and props up
Support point is more, is easier to keep balance.
Preferably, as a kind of embodiment, referring to Fig. 6, the one side of the limiting stand 140 towards the boss is also set
It is equipped with vertical plane 141 and cambered surface 142；Wherein described vertical plane 141 is vertically fixed on the surface of the supporting part 130, the arc
The both ends in face 142 are seamlessly transitted with vertical plane 141 and inclined-plane 143 respectively.Preferably, the height L of the vertical plane 141 should be big
In the sum of thickness of the height equal to boss and the wafer, the height of best boss is not more than 2 times of the thickness of the wafer.
The radian R of the cambered surface 142 should can guarantee that 143 rounding off of vertical plane 141 and inclined-plane, it is impossible to influence voluntarily sliding for wafer
Fall., the inclination angle a on the inclined-plane 143 is less than 20 degree.Vertical plane plays a major role the spacing of wafer, therefore the height of vertical plane
The sum of thickness of boss height and wafer should be greater than or equal to by spending L so that wafer is always positioned at multiple in technical process
In the range of the vertical plane of support structure, it will not be slided along inclined-plane；Cambered surface 142 is mainly so that inclined-plane and vertical plane seamlessly transit,
Wafer is facilitated to be slided from inclined-plane, the radian R of cambered surface determines the ultimate range that wafer can deviate on wafer support device；Inclined-plane
Main function be if wafer is not completely in center when being placed on wafer support device, can be by inclination angle
Accurate location is snapped down to for the inclined-plane of a.
Preferably, as a kind of embodiment, the connecting portion 120 and 110 vertical connection of fixed part, the branch
Support part 110 and 120 vertical connection of connecting portion.Convenient manufacture is so set and is used.
Based on same inventive concept, the present invention also provides a kind of degassing processing chamber 10, including any of the above embodiment
The wafer support device, the wafer support device are fixed on the bottom of degassing processing chamber by the mounting hole of fixed part
Portion.
Preferably, as a kind of embodiment, the wafer support device 100 is two or three；Two or
The outer section of the cambered surface 142 of three wafer support devices 100 is on same first circumference；Two or three crystalline substances
The center of the boss 131 of circle support device 100 is on same second circumference；When wafer is placed on the biography piece of degassing processing chamber
During position, the radius of first circumference is more than the radius of the wafer；The radius of second circumference is less than the wafer
Radius.Two or three wafer support devices in the present embodiment are evenly distributed on the same circumference in the degassing processing chamber
On, especially two or three boss should be made to be evenly distributed on same circumference, can so form the gentle support to wafer,
So that wafer is only contacted with boss.In order to ensure that wafer can be easily placed in two or three wafer support devices, two
Or the outer section of the cambered surface of three wafer support devices should be on same circumference, and two or three wafer supports
The center of the boss of device is on same second circumference, the line at the center of the center of circle of the first circumference and the second circumference with it is described
The plane of supporting part is vertical, and the center of wafer is preferably placed at the center of circle and second circumference of the first circumference when wafer is placed
On the line in the center of circle.So setting can ensure wafer support device in the present embodiment to the supporting point of wafer in same circumference
On, ensure the balance of wafer and horizontal positioned.
When wafer is placed on the biography piece position of degassing processing chamber, the distance between the vertical plane and described boss are less than
Equal to the half thickness of the wafer；The radius of second circumference is the 1/2 of the radius of the wafer.The radius of first circumference with
The difference of wafer radius determines the distance that wafer can deviate, radius, that is, boss of the second circumference to the Support Position of wafer, when
When the radius of second circumference is 0.4 to 0.6 times of wafer radius, boss is more reasonable to the Support Position of wafer.First circumference
Radius be preferably 1.1 times to 1.4 times of wafer radius, the first circumference depends on the height of the 4th radius of a circle and outer ring boss
Degree, the height of outer ring boss can pass the setting of piece situation according to actual wafer and determine again.Therefore the radius of the first circumference is in reality
It can be determined during use according to the specific demand of user and robotic transfer precision.So it can both ensure that wafer is put at the same time
Wiping will not be occurred when on wafer support device by, which putting, touches limiting stand, and wafer will not be made to have big offset.
Meanwhile when wafer is placed on the biography piece position of degassing processing chamber, the two or three wafer support dresses
The outer end for the cambered surface put is on same 3rd circumference；The inner of the cambered surface of the two or three wafer support devices is in
On same 4th circumference；The radius of first circumference is more than the radius of the 4th circumference；The half of 4th circumference
Footpath is more than the radius of the wafer, and the radius of the radius ratio wafer of general 4th circumference is bigger, can be according to transmission precision
Adjustment.
Referring to Fig. 7 and Fig. 8, the wafer support device in degassing processing chamber 10 in the present embodiment is three, these three
Wafer support device is evenly distributed on same circumference, and wafer 2 is placed in three support devices.
The wafer support device of the embodiment of the present invention and the contact area of wafer are big, while there is provided limiting stand to avoid wafer
Occur big offset, the offset of the wafer placed on the wafer support device in the present invention controllable and in the range of allowing,
Various sizes of wafer support device can be designed according to different wafers, it is applied widely.
Embodiment described above only expresses the several embodiments of the present invention, its description is more specific and detailed, but simultaneously
Therefore the limitation to the scope of the claims of the present invention cannot be interpreted as.It should be pointed out that for those of ordinary skill in the art
For, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the guarantor of the present invention
Protect scope.Therefore, the protection domain of patent of the present invention should be subject to claim.
Claims (9)
1. a kind of wafer support device, it is characterised in that including fixed part, connecting portion and supporting part；
The fixed part is fixed on the bottom of degassing processing chamber,
One end of the connecting portion is connected with fixed part, and the other end of the connecting portion is connected with supporting part；
The boss for being used to support wafer is provided with the supporting part；
The supporting part is additionally provided with limiting stand；
The limiting stand sets the other end away from the boss；It is oblique that the one side of the limiting stand towards the boss is provided with one
Face,
Wherein when the wafer needs heat transfer, the surface area of the boss for the surface area of the wafer 0.5% to
1.5%, when the wafer need not conduct heat, the 0.5% of the minimum crystal column surface product of surface area of the boss, it is maximum
Equal to the surface area of the inscribed circle of the supporting part.
2. wafer support device according to claim 1, it is characterised in that the supporting part is horizontally disposed with；
The surface of the boss is plane.
3. wafer support device according to claim 2, it is characterised in that one side of the limiting stand towards the boss
It is additionally provided with vertical plane and cambered surface；
The height of the vertical plane is more than or equal to the sum of the height of the boss and the thickness of the wafer；
The both ends of the cambered surface are seamlessly transitted with the vertical plane and the inclined-plane respectively.
4. wafer support device according to claim 3, it is characterised in that the inclination angle on the inclined-plane is less than 20 degree.
5. wafer support device according to any one of claims 1 to 4, it is characterised in that the connecting portion with it is described solid
Determine portion's vertical connection, the supporting part and the connecting portion vertical connection.
6. a kind of degassing processing chamber, it is characterised in that including the wafer support device described in claim 1 to 5 any one.
7. degassing processing chamber according to claim 6, it is characterised in that the wafer support device is two or three
It is a；
The outer section of the cambered surface of the two or three wafer support devices is on same first circumference；
The center of the boss of the two or three wafer support devices is on same second circumference；
When wafer is placed on the biography piece position of degassing processing chamber, the radius of first circumference is more than the half of the wafer
Footpath；The radius of second circumference is less than the radius of the wafer.
8. degassing processing chamber according to claim 7, it is characterised in that
When wafer is placed on the biography piece position of degassing processing chamber, the radius of second circumference is the radius of the wafer
1/2。
9. degassing processing chamber according to claim 7, it is characterised in that when wafer is placed on the biography of degassing processing chamber
During piece position, the outer end of the cambered surface of the two or three wafer support devices is on same 3rd circumference；Two or
The inner of the cambered surface of three wafer support devices is on same 4th circumference；
The radius of first circumference is more than the radius of the 4th circumference；
The radius of 4th circumference is more than the radius of the wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410031011.6A CN104795347B (en) | 2014-01-22 | 2014-01-22 | Wafer support device and degassing processing chamber |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410031011.6A CN104795347B (en) | 2014-01-22 | 2014-01-22 | Wafer support device and degassing processing chamber |
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| Publication Number | Publication Date |
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| CN104795347A CN104795347A (en) | 2015-07-22 |
| CN104795347B true CN104795347B (en) | 2018-05-04 |
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| CN201410031011.6A Active CN104795347B (en) | 2014-01-22 | 2014-01-22 | Wafer support device and degassing processing chamber |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111312625B (en) * | 2020-02-27 | 2022-09-13 | 至微半导体(上海)有限公司 | Groove body structure and method for preventing groove body structure from shaking and deviating |
| CN112151431B (en) * | 2020-09-25 | 2023-07-11 | 北京北方华创微电子装备有限公司 | Preloading chamber and semiconductor process platform |
| CN112768381A (en) * | 2021-01-19 | 2021-05-07 | 上海广川科技有限公司 | Semiconductor vacuum equipment |
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| US5253411A (en) * | 1990-11-21 | 1993-10-19 | Advanced Micro Devices, Inc. | Method of securing semi-conductor wafer using retention clip |
| WO1999056920A1 (en) * | 1998-05-04 | 1999-11-11 | Brooks Automation, Inc. | Dual arm apparatus with co-axial drive shafts |
| CN101364563A (en) * | 2007-08-06 | 2009-02-11 | 力晶半导体股份有限公司 | Positioning mechanism and substrate stage applying the same |
| CN101587851A (en) * | 2009-06-23 | 2009-11-25 | 北京七星华创电子股份有限公司 | A kind of device that is used for holding plate-like article |
| CN101901777A (en) * | 2009-03-31 | 2010-12-01 | 东京毅力科创株式会社 | Substrate supporting device and substrate supporting method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5253411A (en) * | 1990-11-21 | 1993-10-19 | Advanced Micro Devices, Inc. | Method of securing semi-conductor wafer using retention clip |
| WO1999056920A1 (en) * | 1998-05-04 | 1999-11-11 | Brooks Automation, Inc. | Dual arm apparatus with co-axial drive shafts |
| CN101364563A (en) * | 2007-08-06 | 2009-02-11 | 力晶半导体股份有限公司 | Positioning mechanism and substrate stage applying the same |
| CN101901777A (en) * | 2009-03-31 | 2010-12-01 | 东京毅力科创株式会社 | Substrate supporting device and substrate supporting method |
| CN101587851A (en) * | 2009-06-23 | 2009-11-25 | 北京七星华创电子股份有限公司 | A kind of device that is used for holding plate-like article |
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|---|---|
| CN104795347A (en) | 2015-07-22 |
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