CN104795347A - Wafer supporting device and degassing process chamber - Google Patents
Wafer supporting device and degassing process chamber Download PDFInfo
- Publication number
- CN104795347A CN104795347A CN201410031011.6A CN201410031011A CN104795347A CN 104795347 A CN104795347 A CN 104795347A CN 201410031011 A CN201410031011 A CN 201410031011A CN 104795347 A CN104795347 A CN 104795347A
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- wafer
- boss
- radius
- processing chamber
- degass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
Abstract
The invention provides a wafer supporting device and a degassing process chamber. The wafer supporting device comprises a fixing part, a connecting part and a supporting part. One end of the connecting part is connected with the fixing part, and the other end of the connecting part is connected with the supporting part. The supporting part is provided with a boss used for supporting a wafer. The supporting part is further provided with a limiting bench which is arranged at the other end away from the boss. A surface, facing the boss, of the limiting bench is provided with a slope. The area of contact between the wafer supporting device of the invention and a wafer is large, and the limiting bench is arranged to avoid large offset of the wafer. The offset of a wafer placed on the wafer supporting device is within a controllable and the allowable range. The wafer supporting device can be designed into different sizes according to different wafers, and has a wide range of application.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly relate to a kind of wafer support device and the processing chamber that degass.
Background technology
In semiconductor integrated circuit physical vapor deposition (PVD) manufacture process, comprise four kinds of technological processes: degas, prerinse, barrier film deposition, inculating crystal layer thin film deposition.The effect of technique of wherein degassing utilizes the mode to wafer heats, remove steam or other volatilizable gas of wet-cleaned and surrounding environment introducing, be the critical process affecting yield of devices, good technique of degassing can obtain good film adherability, good material conformability, the control of good temperature.The existing equipment mode of heating that degass has three kinds: bulb heat radiation type, pedestal heated type and the mode that both combine.No matter adopt which kind of mode, at the supporting mechanism transmission wafer all needing thimble class in processing chamber that degass, in heating process process, wafer or be placed on supporting mechanism or be placed on pedestal, and for wafer itself, different heating-up temperatures can bring the change on wafer microcosmic, such as the reduction of wafer rear friction coefficient.
Fig. 1 and Fig. 2 is that when adopting bulb thermal radiation mode of heating, wafer 2 is at the laying state in processing chamber 1 that degass, and Fig. 3 is the structural representation of thimble 11 of the prior art.In prior art when heating process, carry out supporting wafer 2 by three thimbles 11 and ensure the static of wafer 2.
In semiconductor integrated technique, processing chamber 1 temperature of degassing needs to be heated to 180 DEG C even higher sometimes, and needs to carry out long-time heat preservation.Wafer 2 at this temperature microcosmic can change, and the change had the greatest impact is exactly that friction coefficient can reduce.On the other hand, board all can not be adjusted to abswolute level in any factory, and three thimbles 11 can not be in abswolute level, more or less all can some tilt, the processing chamber of board can adopt the vacuum equipments such as cold pump again, can produce vibrations when the vacuum equipments such as cold pump run.Because the existing processing chamber that degass just utilizes three thimble 11 supporting wafer 2, thimble 11 is very little with the contact area of wafer 2, after wafer 2 is heated, friction coefficient changes, the vibrations of such board will cause wafer 2 to offset on three ejector pin mechanisms, wafer 2 side-play amount may be caused in technique temperature retention time excessive, wafer 2 side-play amount exceedes certain limit, the collision with chamber wall or other positions may be there is after spreading out of from the processing chamber 1 that degass when completing wafer 2 after technique, or occur to come off on a robotic arm when wafer 2 spreads out of, even cause wafer broken.
Therefore a kind of new wafer support device is provided to be the problem that those skilled in the art need to solve.
Summary of the invention
In order to overcome above-mentioned deficiency, the object of this invention is to provide a kind of new wafer support device and comprising the processing chamber that degass of this bracing or strutting arrangement.
Technical scheme of the present invention is as follows:
A kind of wafer support device, comprises fixed part, connecting portion and support portion; One end of described connecting portion is connected with fixed part, and the other end of described connecting portion is connected with support portion; Described support portion is provided with the boss for supporting wafer; Described support portion is also provided with limiting stand; Described limiting stand arranges the other end away from described boss; Described limiting stand is provided with an inclined-plane towards the one side of described boss.
Wherein in an embodiment, described support portion is horizontally disposed with; The surface of described boss is plane.
Wherein in an embodiment, described limiting stand is also provided with vertical plane and cambered surface towards the one side of described boss;
The height of described vertical plane is more than or equal to the height of described boss and the thickness sum of described wafer;
The two ends of described cambered surface seamlessly transit with described vertical plane and described inclined-plane respectively.
Wherein in an embodiment, the inclination angle on described inclined-plane is less than 20 degree.
Wherein in an embodiment, described connecting portion is connected with described fixed part is vertical, and described support portion is connected with described connecting portion is vertical.
The present invention also provides one to degas processing chamber, comprises above-described wafer support device;
To degas described in the fixed part of described wafer support device is fixed on the bottom of processing chamber.
Wherein in an embodiment, described wafer support device is two or three;
The outer tangent plane of the cambered surface of two or three described wafer support devices is in same first circumferentially;
The center of the boss of two or three described wafer support devices is in same second circumferentially;
When wafer is placed on the biography sheet position of the processing chamber that degass, the radius of described first circumference is greater than described brilliant radius of a circle; The radius of described second circumference is less than described brilliant radius of a circle.
Wherein in an embodiment, when wafer is placed on the biography sheet position of the processing chamber that degass, the radius of described second circumference is 1/2 of described brilliant radius of a circle.
Wherein in an embodiment, the distance between described vertical plane and described boss is less than or equal to the thickness of described wafer.
Wherein in an embodiment, when wafer is placed on the biography sheet position of the processing chamber that degass, the outer end of the cambered surface of two or three described wafer support devices is in the same 3rd circumferentially; The inner of the cambered surface of two or three described wafer support devices is in the same 4th circumferentially;
The radius of described first circumference is greater than the radius of described 4th circumference;
Described 4th circumference radius be greater than described brilliant radius of a circle.
The invention has the beneficial effects as follows: the contact area of wafer support device of the present invention and wafer is large, be provided with limiting stand avoids wafer that large skew occurs simultaneously, the skew of the wafer that the wafer support device in the present invention is placed is all in scope that is controlled and that allow, the wafer support device of different size can be designed according to different wafers, applied widely.
Accompanying drawing explanation
In order to make wafer support device of the present invention and the object of processing chamber of degassing, technical scheme and advantage are clearly understood, below in conjunction with concrete drawings and the specific embodiments, the present invention is further elaborated.
Fig. 1 is that the processing chamber that degass in prior art places the overall schematic after wafer;
Fig. 2 is the end view of Fig. 1;
Fig. 3 is thimble structure schematic diagram of the prior art;
Fig. 4 is the overall schematic of the supporting construction of wafer support device of the present invention;
Fig. 5 is the cutaway view of the supporting construction shown in Fig. 4;
Fig. 6 is the partial enlarged drawing of the supporting construction shown in Fig. 4;
Fig. 7 is that wafer support application of installation of the present invention is in the overall structure schematic diagram of the processing chamber that degass;
Fig. 8 is the end view of the processing chamber that degass shown in Fig. 7.
Embodiment
Below with reference to the accompanying drawings and describe the present invention in detail in conjunction with the embodiments.It should be noted that, when not conflicting, the embodiment in the application and the feature in embodiment can combine mutually.
See Fig. 4 to Fig. 6, present embodiments provide a kind of wafer support device 100, comprise fixed part 110, connecting portion 120 and support portion 130; One end of described connecting portion 120 is connected with fixed part 110, and the other end of described connecting portion 120 is connected with support portion 130; Described support portion 130 is horizontally disposed with, and described support portion 130 is also provided with the boss 131 for supporting wafer, described support portion 130 be also provided with limiting stand 140 away from the other end of described boss; The one side towards described boss (namely near the face of boss side) of described limiting stand 140 is provided with an inclined-plane 143.
Supporting construction in the present embodiment comprises fixed part, connecting portion, support portion, wherein fixed part is mainly used in fixed support structure, the fixed part of this enforcement is provided with fixing hole, supporting construction can be fixed on through fixing hole by screw and degass in processing chamber or other devices.Connecting portion is mainly used in connecting portion and support portion.Support portion is the critical piece of supporting wafer, therefore support portion should be horizontally disposed with, in order to reduce the contact area of support portion and wafer, wafer is avoided by supporting construction, heat to be derived generation thermal loss in heating process, the present embodiment is provided with the boss with wafer contacts on support portion, when wafer level is placed, wafer only comes in contact with boss, and work as inclined position or the skew of wafer, other parts of support portion and wafer contacts, ensure that wafer can be placed on bracing or strutting arrangement and can not fall down.The Main Function of limiting stand avoids wafer that large skew occurs.Wafer support device in the present embodiment is provided with limiting stand, the problem that when just can avoid vibrations occur in processing chamber, wafer side-play amount is excessive.
Preferably, as a kind of embodiment, described support portion 130 is horizontally disposed with, and the surface of described boss 131 is plane, the surface area of described boss 131 can set according to actual needs, and when wafer needs heat transfer, the surface area of boss is preferably 0.5% to 1.5% of the surface area of described wafer; When wafer does not need heat transfer, the surface area of boss minimum for crystal column surface amass 0.5%, the maximum surface area that can be equivalent to the inscribed circle of support portion 130.The contact area so both avoiding boss and wafer is excessive and affect the PROCESS FOR TREATMENT of degassing of wafer, and the too small wafer that makes of contact area that turn avoid wafer and boss is difficult to keep balancing.The surface of boss is that plane makes the contact area of boss and wafer become greatly, and in prior art, the surface of thimble is cambered surface, then wafer place time with thimble be point cantact, be like this difficult to maintenance balance and easily offset; In the present embodiment, the surface of boss is that the contact area of plane then boss and wafer becomes greatly, and the contact of boss and wafer is that face contacts or linear contact lay, and the strong point is more, keeps balance than being easier to.
Preferably, as a kind of embodiment, see Fig. 6, described limiting stand 140 is also provided with vertical plane 141 and cambered surface 142 towards the one side of described boss; Wherein said vertical plane 141 is vertically fixed on the surface of described support portion 130, and the two ends of described cambered surface 142 seamlessly transit with vertical plane 141 and inclined-plane 143 respectively.Preferably, the height L of described vertical plane 141 should be more than or equal to the height of boss and the thickness sum of described wafer, and the height of best boss is not more than 2 times of the thickness of described wafer.The radian R of described cambered surface 142 should ensure vertical plane 141 and inclined-plane 143 rounding off, can not have influence on the landing voluntarily of wafer., the inclination angle a on described inclined-plane 143 is less than 20 degree.Vertical plane plays a major role to the spacing of wafer, and therefore the height L of vertical plane should be more than or equal to the thickness sum of boss height and wafer, makes wafer in technical process, be positioned at the scope of the vertical plane of multiple supporting construction all the time, can not along sliding on inclined-plane; Cambered surface 142 mainly makes inclined-plane and vertical plane seamlessly transit, and facilitates wafer to slide from inclined-plane, and the radian R of cambered surface determines the ultimate range that wafer can offset on wafer support device; The Main Function on inclined-plane is if wafer is not in center completely when being placed on wafer support device, can be slide to accurate location under the inclined-plane of a by inclination angle.
Preferably, as a kind of embodiment, described connecting portion 120 is connected with described fixed part 110 is vertical, and described support portion 110 is connected with described connecting portion 120 is vertical.Convenient manufacture and use is set like this.
Based on same inventive concept, the present invention also provides one to degas processing chamber 10, and comprise the wafer support device described in above any embodiment, described wafer support device is fixed on the bottom of the processing chamber that degass by the fixing hole of fixed part.
Preferably, as a kind of embodiment, described wafer support device 100 is two or three; The outer tangent plane of the cambered surface 142 of two or three described wafer support devices 100 is in same first circumferentially; The center of the boss 131 of two or three described wafer support devices 100 is in same second circumferentially; When wafer is placed on the biography sheet position of the processing chamber that degass, the radius of described first circumference is greater than described brilliant radius of a circle; The radius of described second circumference is less than described brilliant radius of a circle.That degass in processing chamber described in two or three the wafer support devices in the present embodiment are evenly distributed on is circumferentially same, especially two or three boss should be made to be evenly distributed on circumferentially same, the gentle support to wafer can be formed like this, wafer is only contacted with boss.In order to ensure that wafer can easily be placed in two or three wafer support devices, the outer tangent plane of the cambered surface of two or three wafer support devices should circumferentially same, and the center of the boss of two or three described wafer support devices is in same second circumferentially, the line at the center of circle of the first circumference and the center of the second circumference and the plane orthogonal of described support portion, and when wafer is placed, the center of wafer is preferably placed on the line in the center of circle of the first circumference and the center of circle of the second circumference.Such setting can ensure wafer support device in the present embodiment to the strong point of wafer circumferentially same, ensures balance and the horizontal positioned of wafer.
When wafer is placed on the biography sheet position of the processing chamber that degass, the distance between described vertical plane and described boss is less than or equal to the half thickness of described wafer; The radius of described second circumference is 1/2 of described brilliant radius of a circle.The radius of the first circumference and the difference of wafer radius determine the distance that wafer can offset, the radius of the second circumference and boss are to the Support Position of wafer, when the radius of the second circumference is 0.4 to 0.6 times of wafer radius, the Support Position of boss to wafer is more reasonable.The radius of the first circumference is preferably 1.1 times of wafer radius to 1.4 times, and the first circumference depends on the height of the 4th radius of a circle and outer ring boss, and the height of outer ring boss can pass the setting of sheet situation according to the wafer of reality again to be determined.Therefore the radius of the first circumference can decide according to the concrete demand of user and robotic transfer precision when reality uses.Wiping can not be there is when can both ensure that wafer is placed on wafer support device so simultaneously and touch limiting stand, wafer can not be made again to have large skew.
Meanwhile, when wafer is placed on the biography sheet position of the processing chamber that degass, the outer end of the cambered surface of two or three described wafer support devices is in the same 3rd circumferentially; The inner of the cambered surface of two or three described wafer support devices is in the same 4th circumferentially; Described first circumference radius be greater than the radius of described 4th circumference; Described 4th circumference radius be greater than described brilliant radius of a circle, the brilliant radius of a circle of the radius ratio of general 4th circumference is bigger, can adjust according to transmission precision.
See Fig. 7 and Fig. 8, the wafer support device degassed in processing chamber 10 in the present embodiment is three, and these three wafer support devices are evenly distributed on circumferentially same, and wafer 2 is placed on three bracing or strutting arrangements.
The wafer support device of the embodiment of the present invention and the contact area of wafer large, be provided with limiting stand avoids wafer that large skew occurs simultaneously, the skew of the wafer that the wafer support device in the present invention is placed is all in scope that is controlled and that allow, the wafer support device of different size can be designed according to different wafers, applied widely.
The above embodiment only have expressed several execution mode of the present invention, and it describes comparatively concrete and detailed, but therefore can not be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection range of patent of the present invention should be as the criterion with claim.
Claims (10)
1. a wafer support device, is characterized in that, comprises fixed part, connecting portion and support portion;
One end of described connecting portion is connected with fixed part, and the other end of described connecting portion is connected with support portion;
Described support portion is provided with the boss for supporting wafer;
Described support portion is also provided with limiting stand;
Described limiting stand arranges the other end away from described boss; Described limiting stand is provided with an inclined-plane towards the one side of described boss.
2. wafer support device according to claim 1, is characterized in that, described support portion is horizontally disposed with;
The surface of described boss is plane.
3. wafer support device according to claim 2, is characterized in that, described limiting stand is also provided with vertical plane and cambered surface towards the one side of described boss;
The height of described vertical plane is more than or equal to the height of described boss and the thickness sum of described wafer;
The two ends of described cambered surface seamlessly transit with described vertical plane and described inclined-plane respectively.
4. wafer support device according to claim 3, is characterized in that, the inclination angle on described inclined-plane is less than 20 degree.
5. the wafer support device according to any one of Claims 1-4, is characterized in that, described connecting portion is connected with described fixed part is vertical, and described support portion is connected with described connecting portion is vertical.
6. degas a processing chamber, it is characterized in that, comprises the wafer support device described in claim 1 to 5 any one;
To degas described in the fixed part of described wafer support device is fixed on the bottom of processing chamber.
7. the processing chamber that degass according to claim 6, is characterized in that, described wafer support device is two or three;
The outer tangent plane of the cambered surface of two or three described wafer support devices is in same first circumferentially;
The center of the boss of two or three described wafer support devices is in same second circumferentially;
When wafer is placed on the biography sheet position of the processing chamber that degass, the radius of described first circumference is greater than described brilliant radius of a circle; The radius of described second circumference is less than described brilliant radius of a circle.
8. the processing chamber that degass according to claim 7, is characterized in that,
When wafer is placed on the biography sheet position of the processing chamber that degass, the radius of described second circumference is 1/2 of described brilliant radius of a circle.
9. the processing chamber that degass according to claim 7, is characterized in that, the distance between described vertical plane and described boss is less than or equal to the thickness of described wafer.
10. the processing chamber that degass according to claim 7, is characterized in that, when wafer is placed on the biography sheet position of the processing chamber that degass, the outer end of the cambered surface of two or three described wafer support devices is in the same 3rd circumferentially; The inner of the cambered surface of two or three described wafer support devices is in the same 4th circumferentially;
The radius of described first circumference is greater than the radius of described 4th circumference;
Described 4th circumference radius be greater than described brilliant radius of a circle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410031011.6A CN104795347B (en) | 2014-01-22 | 2014-01-22 | Wafer support device and degassing processing chamber |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410031011.6A CN104795347B (en) | 2014-01-22 | 2014-01-22 | Wafer support device and degassing processing chamber |
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| Publication Number | Publication Date |
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| CN104795347A true CN104795347A (en) | 2015-07-22 |
| CN104795347B CN104795347B (en) | 2018-05-04 |
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| CN201410031011.6A Active CN104795347B (en) | 2014-01-22 | 2014-01-22 | Wafer support device and degassing processing chamber |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111312625A (en) * | 2020-02-27 | 2020-06-19 | 至微半导体(上海)有限公司 | Groove body structure and method for preventing groove body structure from shaking and deviating |
| CN112768381A (en) * | 2021-01-19 | 2021-05-07 | 上海广川科技有限公司 | Semiconductor vacuum equipment |
| WO2022063052A1 (en) * | 2020-09-25 | 2022-03-31 | 北京北方华创微电子装备有限公司 | Pre-loading chamber and semiconductor processing platform |
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| CN104795347B (en) | 2018-05-04 |
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Address after: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Applicant after: Beijing North China microelectronics equipment Co Ltd Address before: 100176 Beijing economic and Technological Development Zone, Beijing, Wenchang Road, No. 8, No. Applicant before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
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