CN104576484A - Tray structure in semiconductor equipment - Google Patents
Tray structure in semiconductor equipment Download PDFInfo
- Publication number
- CN104576484A CN104576484A CN201310475745.9A CN201310475745A CN104576484A CN 104576484 A CN104576484 A CN 104576484A CN 201310475745 A CN201310475745 A CN 201310475745A CN 104576484 A CN104576484 A CN 104576484A
- Authority
- CN
- China
- Prior art keywords
- groove
- holder structure
- support holder
- wafer
- cannelure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention discloses a tray structure in semiconductor equipment. The tray structure comprises an annular groove and a boss, wherein a plurality of grooves are formed in the surface of the boss; at least one groove is communicated with the annular groove. As the grooves are formed in the surface of the boss in the annular groove for placing a wafer, and the grooves are not in contact with the wafer during machining, the temperature in the center area of the wafer is reduced during machining. Meanwhile, process gas is operated in the grooves, and transfer heat to the wafer, so that the temperature of the whole wafer is more balanced during machining. The difference of process results of the periphery and the middle of the wafer caused by nonuniform temperature is avoided.
Description
Technical field
The present invention relates to semiconductor equipment and manufacture field, particularly relate to the support holder structure in a kind of semiconductor equipment.
Background technology
In semiconductor equipment, such as physical chemistry vapor phase deposition membrane equipment (PVD) or plasma etch apparatus (ETCH), some needs will treat that the wafer of technique is placed on a pallet, pallet is sent to processing chamber and carries out technique, the Main Function of pallet is bearing wafer, ensures the uniformity of chip temperature during technique.
In production, meeting deposit film on the pallet of Waffer edge, and the film of wafer periphery deposition to come off generation particle because high and low temperature alternative produces stress, wafer contamination is caused in order to avoid particle splashes on wafer, existing tray design scheme is in pallet, the surrounding of the circular recess of each carrying Circular wafer, has driven a cannelure, thus make the state being rendered as boss in cannelure, for bearing wafer.The diameter of circular recess should be equal with the external diameter of cannelure, and slightly larger than the diameter of wafer.The internal diameter (i.e. the diameter of boss) of cannelure should be slightly less than wafer diameter.As shown in Figure 1, be the circular recess on pallet and cannelure, Fig. 2 is cannelure detail view.
But because the existence of cannelure, wafer periphery does not have the heat transfer of pallet, heats Waffer edge by means of only thermal radiation form, causes wafer to be heated uneven, temperature is around lower than middle, thus causes the process results of wafer periphery different with centre.
Summary of the invention
Using traditional tray to cause wafer to be heated uneven problem for solving, the invention provides a kind of support holder structure made in the semiconductor equipment be heated evenly in the wafer technique course of processing.
For realizing the support holder structure in a kind of semiconductor equipment that the object of the invention provides, comprising cannelure and boss, boss surface is provided with multiple groove;
At least one groove in described multiple groove is communicated with described cannelure.
As a kind of embodiment, the degree of depth of described groove is more than or equal to described support holder structure for process 50% of wafer thickness, and is less than or equal to described support holder structure for 8 times of wafer thickness of processing.
Preferably, as a kind of embodiment, the degree of depth of described groove equals described support holder structure for 2 times of processed wafer thickness.
As a kind of embodiment, the width of described groove be more than or equal to described support holder structure for process 1% of wafer diameter, and be less than or equal to described support holder structure for process 30% of wafer diameter.
Preferably, as a kind of embodiment, the width of described groove equal described support holder structure for process 3% of wafer diameter.
Preferably, as a kind of embodiment, the gross area of described multiple groove is described support holder structure for 30% of the chip area processed.
As a kind of embodiment, described groove comprises annular groove and the first radial groove;
Described annular groove circularizes in described boss surface and is uniformly distributed, concentric with described cannelure, and its diameter is less than described cannelure diameter;
Described first radial groove through described cannelure and described annular groove the center of circle and be communicated with described cannelure and described annular groove.
As a kind of embodiment, increase gradually from described cannelure to the width of the described annular groove of annular spread the direction, the center of circle of described cannelure or reduce.
As another kind of embodiment, described groove comprises the second radial groove be communicated with described cannelure, and the straight trough be evenly distributed on around described second radial groove be connected with the second radial groove described at least one.
As a kind of embodiment, described straight trough is vertical with described second radial groove, and is communicated with described second radial groove.
As a kind of embodiment, from described cannelure to the direction, the center of circle of described cannelure, described straight trough length and width increase gradually or reduce.
Beneficial effect of the present invention comprises:
Support holder structure in a kind of semiconductor equipment provided by the invention, arranges groove by the boss surface in the circular recess placing wafer, groove in processes process not with contact wafers, thus reduce the temperature of wafer central area in processes process.Process gas runs in groove simultaneously, is wafer transferring heat, makes the temperature of whole wafer in processes process more balanced.Avoid the wafer periphery that causes due to non-uniform temperature different with middle process result.
Accompanying drawing explanation
Fig. 1 is the structural representation of traditional tray one instantiation;
Fig. 2 is the detail view of pallet intermediate annular groove;
Fig. 3 is the structural representation of a specific embodiment of support holder structure in a kind of semiconductor equipment of the present invention;
Fig. 4 is the structural representation of another specific embodiment of support holder structure in a kind of semiconductor equipment of the present invention.
Embodiment
In order to make object of the present invention, technical scheme and advantage clearly understand, be described below in conjunction with the embodiment of accompanying drawing to the support holder structure in the semiconductor equipment of the embodiment of the present invention.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
See Fig. 1, Fig. 2 and Fig. 3, the support holder structure in a kind of semiconductor equipment of the embodiment of the present invention, comprises cannelure 100 and boss 200, and boss surface is provided with multiple groove 300.And at least one groove in multiple groove is communicated with described cannelure.
It should be noted that the pallet 010 for placing in the semiconductor equipment of 5 wafer in FIG includes the circular recess 400 that 5 are placed wafer, has cannelure 100 and boss 200 in the scope that circular recess comprises in pallet herein.
In technical process, the temperature of wafer is by pallet heat transfer to wafer, but because the existence of cannelure, its internal diameter is slightly less than wafer diameter again, and therefore, wafer surrounding does not have boss to contact, and the temperature on pallet cannot conduct to the outer rim of wafer.Because there is no the heat transfer of pallet, by means of only thermal radiation form, Waffer edge is heated, cause the temperature of wafer periphery lower than middle, thus cause the process results of wafer periphery different with centre.In embodiments of the present invention, the boss placing wafer in traditional tray arranges groove 300.When carrying out processes, the groove being arranged on boss surface does not contact with processed wafer, reduces the temperature of wafer zone line.And groove is communicated with described cannelure, process gas can be run in groove, be the even transferring heat of wafer, the medium temperature of processed wafer and lip temperature are consistent, ensure the uniformity of wafer surface temperature.Be conducive to the stability and the accuracy that improve processes.
In other embodiments, described pallet can be the pallet placing other quantity wafers.
As a kind of embodiment, as shown in Figure 3, described groove comprises annular groove 310 and the first radial groove 320.Described annular groove circularizes in described boss surface and is uniformly distributed, concentric with described cannelure, and its diameter is less than described cannelure diameter.Described first radial groove through described cannelure and described annular groove the center of circle and be communicated with described cannelure and described annular groove.
Groove part in processes process on pallet does not contact with wafer, and the heat on pallet can be heated wafer by the mode of radiation, consistent with Waffer edge corresponding annular groove portion mode of heating.The groove circularizing distribution makes the position distribution that heated wafer by radiation mode even, thus makes wafer heating temperature more even.
As a kind of embodiment, described first radial groove is communicated with described cannelure and described annular groove, and leaves predetermined distance with the central point of described boss.
First radial groove is communicated with described cannelure and described annular groove, and process gas can be circulated in annular groove and the first radial groove, is the even transferring heat of wafer, thus reaches and make the uniform effect of chip temperature.
As a kind of embodiment, increase gradually from described cannelure to the width of the annular groove 310 of annular spread the direction, the center of circle of described cannelure.
Because in processes process, wafer is reduced gradually by the temperature of center to edge, so, on the width of the annular groove be arranged on boss is from edge to center position, increases the harmony being more conducive to wafer temperature in technical process gradually, makes Waffer edge and center wafer have identical process results.
In other embodiments, also from described cannelure to the width of the annular groove 310 of annular spread the direction, the center of circle of described cannelure can reduce gradually or remain unchanged.
As a kind of embodiment, on described boss is from edge to center position, the distance between each annular groove reduces gradually.
Same, while increasing annular groove width gradually on from boss edge to center position, also can reduce the distance between adjacent annular groove gradually, thus also play the effect of balanced wafer technique temperature, ensure that wafer periphery and centre have identical process results.
As a kind of embodiment, the degree of depth of described groove is more than or equal to described support holder structure for process 50% of wafer thickness, and is less than or equal to described support holder structure for 8 times of wafer thickness of processing.
Preferably, as a kind of embodiment, the degree of depth of described groove equals described support holder structure for 2 times of processed wafer thickness.
Boss arranges the degree of depth and equals the groove of described support holder structure for the thickness 2 times of processed wafer, described groove is convenient to the circulation of process gas, and groove makes processing simply.
As a kind of embodiment, the width of described groove be more than or equal to described support holder structure for process 1% of wafer diameter, and be less than or equal to described support holder structure for process 30% of wafer diameter.
Preferably, as a kind of embodiment, the width of described groove equal described support holder structure for process 3% of wafer diameter.
For ensureing the uniformity of chip temperature in processes process, the recess width be arranged on boss is unsuitable wide or narrow, and preferably, the width that can arrange radial groove is 3% of processed wafer diameter.Therefore, the width arranging radial groove is 3% of processed wafer diameter.The width of annular groove changes to some extent with position difference.
As another kind of embodiment, as shown in Figure 4, described groove 300 comprises the second radial groove 330 be communicated with described cannelure, and the straight trough 340 be evenly distributed on around described second radial groove be connected with the second radial groove described at least one.
As shown in Figure 4,4 the second radial grooves are had to surround 4 sector regions, straight trough is provided with in 4 sector regions, straight trough is evenly distributed on around described second radial groove, other 4 the second radial grooves divide described sector region respectively equally, and the straight trough be communicated with in the sector region of place and cannelure.
As similar in annular groove effect, setting like this can reduce the temperature of center wafer position, and process gas also can play the effect of even transferring heat, make each several part more uniform temperature in wafer process technical process, avoid Waffer edge different from middle process result.
Preferably, as a kind of embodiment, from described cannelure to the direction, the center of circle of described cannelure, described straight trough length and width increase gradually or reduce.
Can, at length and the width raising straightening groove from described cannelure to the direction, the center of circle of described cannelure, make the straight trough area near boss center larger.
Area near center wafer position straight trough can solve the problem that in wafer process process, central temperature is too high more greatly, makes temperature more balanced.Preferably, as a kind of embodiment, the gross area of described multiple groove is described support holder structure for 30% of the chip area processed.
In order to ensure the normal support of wafer, the area that boss arranges groove is unsuitable excessive, preferably, the gross area of multiple groove is described support holder structure for the chip area processed 30% time, groove can play the effect of good temperature equalization, and can ensure the normal support of processed wafer.
The above embodiment only have expressed several execution mode of the present invention, and it describes comparatively concrete and detailed, but therefore can not be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection range of patent of the present invention should be as the criterion with claims.
Claims (11)
1. the support holder structure in semiconductor equipment, comprises cannelure and boss, it is characterized in that, boss surface is provided with multiple groove;
At least one groove in described multiple groove is communicated with described cannelure.
2. the support holder structure in semiconductor equipment according to claim 1, it is characterized in that, the degree of depth of described groove is more than or equal to described support holder structure for process 50% of wafer thickness, and is less than or equal to described support holder structure for 8 times of wafer thickness of processing.
3. the support holder structure in semiconductor equipment according to claim 2, is characterized in that, the degree of depth of described groove equals described support holder structure for 2 times of processed wafer thickness.
4. the support holder structure in semiconductor equipment according to claim 1, is characterized in that, the width of described groove be more than or equal to described support holder structure for process 1% of wafer diameter, and be less than or equal to described support holder structure for process 30% of wafer diameter.
5. the support holder structure in semiconductor equipment according to claim 4, is characterized in that, the width of described groove equal described support holder structure for process 3% of wafer diameter.
6. the support holder structure in semiconductor equipment according to claim 1, is characterized in that, the gross area of described multiple groove is described support holder structure for 30% of the chip area processed.
7. the support holder structure in the semiconductor equipment according to any one of claim 1 to 6, is characterized in that, described groove comprises annular groove and the first radial groove;
Described annular groove circularizes in described boss surface and is uniformly distributed, concentric with described cannelure, and its diameter is less than described cannelure diameter;
Described first radial groove through described cannelure and described annular groove the center of circle and be communicated with described cannelure and described annular groove.
8. the support holder structure in semiconductor equipment according to claim 7, is characterized in that, increases gradually from described cannelure to the width of the described annular groove of annular spread the direction, the center of circle of described cannelure or reduces.
9. the support holder structure in the semiconductor equipment according to any one of claim 1 to 6, it is characterized in that, described groove comprises the second radial groove be communicated with described cannelure, and the straight trough be evenly distributed on around described second radial groove be connected with the second radial groove described at least one.
10. the support holder structure in semiconductor equipment according to claim 9, is characterized in that, described straight trough and the second radial groove be communicated with it vertical.
Support holder structure in 11. semiconductor equipments according to claim 10, is characterized in that, from described cannelure to the direction, the center of circle of described cannelure, described straight trough length and width increase gradually or reduce.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310475745.9A CN104576484A (en) | 2013-10-12 | 2013-10-12 | Tray structure in semiconductor equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310475745.9A CN104576484A (en) | 2013-10-12 | 2013-10-12 | Tray structure in semiconductor equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104576484A true CN104576484A (en) | 2015-04-29 |
Family
ID=53092220
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310475745.9A Pending CN104576484A (en) | 2013-10-12 | 2013-10-12 | Tray structure in semiconductor equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104576484A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111816604A (en) * | 2020-08-18 | 2020-10-23 | 北京智创芯源科技有限公司 | Wafer etching method |
| CN112908908A (en) * | 2021-01-29 | 2021-06-04 | 宁波江丰电子材料股份有限公司 | Back structure of wafer tray and processing method thereof |
| CN113820021A (en) * | 2021-11-02 | 2021-12-21 | 中国计量科学研究院 | Temperature equalizing structure of low-temperature surface source black body and manufacturing method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001230234A (en) * | 2000-02-16 | 2001-08-24 | Hitachi Ltd | Apparatus and method for plasma treatment |
| US7736528B2 (en) * | 2005-10-12 | 2010-06-15 | Panasonic Corporation | Plasma processing apparatus and plasma processing method |
| CN101800164A (en) * | 2006-10-24 | 2010-08-11 | 联华电子股份有限公司 | Protective wafer |
| CN102412176A (en) * | 2010-09-26 | 2012-04-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Pallet and wafer processing equipment possessing the same |
| CN102468205A (en) * | 2010-11-18 | 2012-05-23 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Tray and wafer processing equipment with same |
-
2013
- 2013-10-12 CN CN201310475745.9A patent/CN104576484A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001230234A (en) * | 2000-02-16 | 2001-08-24 | Hitachi Ltd | Apparatus and method for plasma treatment |
| US7736528B2 (en) * | 2005-10-12 | 2010-06-15 | Panasonic Corporation | Plasma processing apparatus and plasma processing method |
| CN101800164A (en) * | 2006-10-24 | 2010-08-11 | 联华电子股份有限公司 | Protective wafer |
| CN102412176A (en) * | 2010-09-26 | 2012-04-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Pallet and wafer processing equipment possessing the same |
| CN102468205A (en) * | 2010-11-18 | 2012-05-23 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Tray and wafer processing equipment with same |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111816604A (en) * | 2020-08-18 | 2020-10-23 | 北京智创芯源科技有限公司 | Wafer etching method |
| CN112908908A (en) * | 2021-01-29 | 2021-06-04 | 宁波江丰电子材料股份有限公司 | Back structure of wafer tray and processing method thereof |
| CN113820021A (en) * | 2021-11-02 | 2021-12-21 | 中国计量科学研究院 | Temperature equalizing structure of low-temperature surface source black body and manufacturing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR102361710B1 (en) | Thermal processing susceptor | |
| US20170051402A1 (en) | Susceptor and substrate processing apparatus | |
| US20160068996A1 (en) | Susceptor and pre-heat ring for thermal processing of substrates | |
| US10159112B2 (en) | Wafer holder with tapered region | |
| CN102983093A (en) | Graphite wafer carrier used during manufacturing process of LED epitaxy wafers | |
| KR20220087415A (en) | Plasma processing apparatus and focus ring | |
| JP5446760B2 (en) | Epitaxial growth method | |
| JP2014160819A5 (en) | ||
| JP2007067037A (en) | Vacuum processing device | |
| TWM448051U (en) | Electrostatic chuck capable of sectionally regulating temperature | |
| CN105448768B (en) | Semiconductor processing equipment | |
| CN104576484A (en) | Tray structure in semiconductor equipment | |
| KR101268822B1 (en) | Heater for wafer | |
| CN204927234U (en) | Improve slope ceramic ring of wafer surface film appearance | |
| US7262390B2 (en) | Apparatus and adjusting technology for uniform thermal processing | |
| CN104213103A (en) | Heat preservation heat insulation device of MOCVD reaction chamber | |
| CN107587118B (en) | Graphite plate | |
| CN101419929A (en) | Electrostatic chuck | |
| CN113517192A (en) | Wafer processing method and method of manufacturing semiconductor device | |
| JP2023507091A (en) | A semiconductor processing chuck with recesses near the perimeter of the wafer to reduce edge/center non-uniformity | |
| CN103578900B (en) | Apparatus for processing plasma and electrostatic chuck thereof | |
| JP6210382B2 (en) | Epitaxial growth equipment | |
| CN103614709A (en) | Combined base type electromagnetic heating device used in metal organic chemical vapor deposition (MOCVD) reaction chamber | |
| CN103074599A (en) | Reaction chamber | |
| US20230307228A1 (en) | Pixelated showerhead for rf sensitive processes |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Applicant after: Beijing North China microelectronics equipment Co Ltd Address before: 100176 Beijing economic and Technological Development Zone, Beijing, Wenchang Road, No. 8, No. Applicant before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
|
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20150429 |