KR20190069313A - Vapor deposition apparatus - Google Patents

Abstract

The present invention provides a vapor deposition apparatus which can reduce a difference between a temperature of an adjustment target such as a substrate or a deposition mask and a target temperature. At least one side of a substrate (W) and a deposition mask (M) is an adjustment target for temperature. The vapor deposition apparatus includes: a resistance heating heater (22) thermally coming in contact with the adjustment target to adjust a temperature of the adjustment target; and a temperature adjustment unit (33) to control a current supplied to the resistance heating heater (22) in accordance with the temperature of the adjustment target. A temperature higher than the temperature of the adjustment target when inserted into a vacuum tank (16) is a target temperature of the adjustment target. The temperature adjustment unit (33) sets the target temperature when a deposition material is discharged from a deposition source (11) to a temperature reached only by supply and stoppage of calories by the resistance heating heater (22).

Description

[0001] VAPOR DEPOSITION APPARATUS [0002]

The present invention relates to a deposition apparatus having a heating unit for heating a substrate.

In the vapor deposition apparatus, a deposition mask is disposed between a deposition surface of a substrate and an evaporation source, and a pattern of a shape following the opening of the deposition mask is formed on a deposition surface of the substrate. A technique for controlling the temperature of a substrate or a mask has been proposed for the purpose of suppressing thermal expansion of a substrate or a mask within a predetermined range in a vapor deposition apparatus (see, for example, Patent Document 1).

Patent Document 1: JP-A-2017-8409

However, in the technique of temperature control of a substrate or a mask, a technique of circulating a temperature control water to a member that contacts a substrate or a member that supports the mask is used. On the other hand, in the control of the temperature for circulating the temperature control water, it is necessary to adjust the temperature of the temperature control water that has been raised to a predetermined temperature. At this time, since the heat capacity of the temperature control water is large, it takes much time to adjust the temperature of the temperature control water. As a result, it is difficult to follow the temperature change due to the deposition by adjusting the temperature of the temperature adjusting water, and the temperature of the substrate or the temperature of the deposition mask becomes greatly different for each deposition.

An object of the present invention is to provide a deposition apparatus capable of reducing a difference between a target temperature and a target temperature to be adjusted, such as a substrate or a deposition mask.

One aspect of the invention relates to a deposition apparatus. A holding mechanism for holding a substrate and holding a deposition mask between the deposition source and the substrate in a state in which the surface of the substrate faces the deposition source; A resistance heating heater for adjusting at least one of the substrate and the deposition mask to be an object of temperature adjustment and in thermal contact with the adjustment object to adjust the temperature of the adjustment object; Wherein a temperature higher than a temperature of the object to be adjusted when the object is brought into the vacuum chamber is a target temperature of the object to be adjusted, and the temperature adjusting unit adjusts the temperature of the object to be adjusted when the evaporation material is discharged from the evaporation source The target temperature is set to a temperature reaching only by the supply of the heat amount by the resistance heating heater and the stop Determined.

According to the vapor deposition apparatus, the adjustment of the amount of heat to the object to be adjusted is realized by the resistance heating heater and the temperature adjusting unit. At this time, a temperature higher than the temperature of the object to be adjusted when brought into the vacuum chamber is set as the target temperature of the adjustment object. The current to be supplied to the resistance heating heater is controlled so that the temperature of the adjustment object reaches the target temperature. Thus, for example, it is not necessary to cool the adjustment target separately due to the target temperature being close to the room temperature, and it becomes possible to reach the target temperature only by the amount of heat supplied from the resistance heating heater. As a result, it is possible to reduce the difference between the temperature of the object to be adjusted such as the substrate and the deposition mask, and the target temperature, without separately using a configuration for cooling the adjustment object as compared with the temperature adjustment using the temperature control water.

Wherein the holding mechanism holds the resistance heating heater, and when the evaporation material is discharged from the evaporation source, the substrate, the deposition mask, and the resistance heating heater are integrally formed, . According to this vapor deposition apparatus, as the evaporation material is discharged from the evaporation source, the substrate, the deposition mask, and the resistance heating heater are rotated in the circumferential direction of the substrate. This makes it possible to increase the uniformity of the evaporation material in the substrate. Since the difference between the target temperature and the temperature to be controlled can be reduced in a state where the uniformity of the evaporation material is increased, it becomes possible to enhance the uniformity of the properties of the evaporation material adhered to the substrate.

Wherein the object to be adjusted is the substrate, the resistance heating heater is embedded in a heat conduction plate which is in surface contact with the back surface of the substrate, the holding mechanism holds the heat conduction plate, The substrate and the evaporation mask may be integrally formed with the heat conduction plate so as to be rotated in the circumferential direction of the substrate. According to such a deposition apparatus, since the amount of heat of the resistance heating heater is transmitted to the substrate through the surface contact of the back surface of the substrate with the heat conduction plate, it is possible to improve the followability of the temperature of the substrate with respect to the temperature of the resistance heating heater.

In the above-described vapor deposition apparatus, the holding mechanism may integrally make the substrate, the evaporation mask, and the thermally conductive plate in a state in which the surface of the substrate and the evaporation mask are in surface contact when the evaporation material is discharged from the evaporation source They may be rotated in the circumferential direction of the substrate. According to such a deposition apparatus, since the deposition mask and the surface of the substrate are in surface contact with each other, it becomes possible to increase the precision of adjusting the shape of the deposit by the deposition material to the shape of the deposition mask.

The deposition apparatus may further include: an upper structure connected to the holding mechanism; a lower structure supporting the upper structure; and a connection portion disposed between the lower structure and the upper structure to connect the upper structure and the lower structure And the connection portion may have a dustproof function for suppressing transmission of vibration from the lower structure to the upper structure. According to such a vapor deposition apparatus, the relative position of the adjustment object and the resistance heating heater is suppressed from being displaced by the vibration. As a result, since the accuracy of the position of the object to be adjusted with respect to the resistance heating heater increases, it becomes possible to improve the adjustment accuracy of the temperature in the object of adjustment.

The deposition apparatus according to any one of claims 1 to 3, wherein the object to be adjusted is the substrate, an imaging section that faces the back surface of the substrate and captures the deposition mask and the back surface of the substrate, And a positioning unit for aligning the position of the substrate with the position of the substrate, wherein the positioning unit includes a first phase by the light reflected by the flat part of the substrate, and a second phase by the light reflected by the bevel part connected to the flat part, The boundary between the flat portion and the bevel portion based on the contrast on the substrate may be extracted as a part of the outer shape of the substrate and the position of the substrate may be detected using a part of the extracted outer shape.

The bevel portion defining the contour of the substrate is typically a curved surface having a predetermined curvature in the thickness direction of the substrate. In the image photographed by the bevel portion, for example, the brightness gradually decreases toward the outline of the substrate, and the amount of plowing gradually increases. As a result, in the technique of detecting the outline of the substrate from the image of the bevel portion, a large error is generated at the position of the detected outline. On the other hand, the boundary between the bevel portion and the flat portion is a boundary in which the surface direction of the substrate is largely changed. For example, when the image is taken from a direction opposite to the flat portion, it is also a portion that can be clearly detected. In the above-described configuration, since the positioning portion detects the position of the substrate from these boundaries based on the first phase by the light reflected by the flat portion and the second phase contrast by the light reflected by the bevel portion, It is possible to improve the accuracy of detection. As a result, the precision of the position of the substrate, and hence the accuracy of the position of the substrate with respect to the resistance heating heater, is increased, thereby making it possible to raise the accuracy of adjusting the temperature of the substrate.

According to the present invention, it is possible to reduce the difference between the temperature of the substrate and the deposition mask and the target temperature.

BRIEF DESCRIPTION OF DRAWINGS FIG. 1 is a configuration diagram showing a configuration of a vapor deposition apparatus. FIG.
2 is a plan view showing an imaging range of a deposition camera.
3 is a view showing an example of an image taken by a deposition camera.
4 is an operation diagram showing the operation of the deposition apparatus.

Hereinafter, one embodiment of the deposition apparatus will be described with reference to Figs. 1 to 4. Fig. 1 and 4, the mechanical connection between the constituent elements constituting the evaporation apparatus is shown by a broken line for convenience of explanation, and the electrical connection between the constituent elements constituting the evaporation apparatus is indicated by a solid line.

1, the deposition apparatus includes an evaporation source 11 that emits an evaporation material, a plurality of evaporation cameras 12, a substrate holder 13 that supports the substrate W, a deposition mask M, A driving source 15, and a transfer mechanism 20. The mask base 14 is a support member for supporting the mask base 14, The substrate holder 13 and the mask base 14 are examples of a holding mechanism. The vacuum chamber 16 for accommodating the evaporation source 11, the substrate holder 13 and the mask base 14 is an example of the lower structure and supports the holding mechanism. The inside of the vacuum chamber 16 is connected to an exhaust system 17 such as a vacuum pump and is decompressed to a predetermined pressure.

The substrate W to be brought into the vacuum chamber 16 is, for example, a glass substrate covered with a light reflective thin film or a silicon substrate having a non-transparent property. The substrate W includes a front surface WF and a rear surface WR and is positioned on the surface WF of the substrate W by a plurality of substrate marks Wm (see FIG. 2). The substrate mark Wm positioned on the surface WF is detected by each device other than the evaporation device which performs processing on the substrate W and the position of the substrate W . The outer peripheral portion of the back surface WR of the substrate W has a flat portion Wp1 (see Fig. 2) and a bevel portion Wp2 (see Fig. 2) connected to the flat portion Wp1. The boundary between the flat portion Wp1 and the bevel portion Wp2 is detected by the photographing of the deposition camera 12 and used for specifying the position of the substrate W in the deposition apparatus.

The deposition mask M brought into the vacuum chamber 16 has a plurality of openings for forming a predetermined pattern on the surface WF of the substrate W. [ The deposition mask M has a size that deviates from the substrate W in the entire circumferential direction of the substrate W. [ The deposition mask M has a plurality of mask marks Mm (see Fig. 2) at a portion deviating from the substrate W. As shown in Fig. A plurality of mask marks Mm are detected by the photographing of the deposition camera 12 and used for specifying the position of the deposition mask M in the deposition apparatus.

The evaporation source 11 forms a thin film by the evaporation material on the surface WF of the substrate W. The evaporation source 11 is an evaporation source including, for example, a resistance heating type evaporation source, an induction heating type evaporation source, or an electron beam. The evaporation material is a material of a thin film to be formed on the surface WF of the substrate W by being heated by the evaporation source 11 and sublimating. The deposition material is, for example, an organic material, but may be an inorganic material.

The substrate holder 13 is located between the plurality of deposition cameras 12 and the deposition source 11. The substrate holder 13 is an area in which the substrate W is arranged, and defines a virtual arrangement area WA. The substrate holder 13 supports the substrate W to be carried into the vacuum chamber 16. [ The substrate holder 13 allows the substrate W to be taken out from the vacuum chamber 16 to another chamber. The substrate holder 13 supports the outer surface of the surface WF in the arrangement area WA toward the side of the evaporation source 11 (the lower side in Fig. 1) of the surface WF of the substrate W. That is, the substrate holder 13 opposes the rear surface WR of the substrate W and the plurality of deposition cameras 12, and holds the substrate W between the plurality of deposition cameras 12 and the deposition source 11 do.

The substrate mark Wm located on the surface WF is difficult to be picked up from the side opposite to the surface WF because of the presence of obstacles such as the substrate holder 13 for example. The substrate mark Wm located on the surface WF is difficult to be picked up from the side opposite to the back side WR because the substrate W does not have sufficient transparency or is opaque, for example. That is, in the state in which the substrate holder 13 supports the substrate W, it is difficult to detect the position of the substrate mark Wm by the deposition camera 12. [

The mask base 14 is located between the plurality of deposition cameras 12 and the deposition source 11. The mask base 14 is a region in which the deposition mask M is disposed, and defines a virtual arrangement region MA. The mask base 14 is mounted on a holder hook 8F fixed to the support frame 18. [ The mask base 14 supports the outer periphery of the deposition mask M in the arrangement area MA. The mask base 14 opposes the deposition mask M with the surface WF of the substrate W and disposes the deposition mask M between the substrate W and the evaporation source 11. [

Each of the deposition cameras 12 is an example of an image pickup unit, and is, for example, a CCD camera. The position of the optical axis 2A of one deposition camera 12 is fixed with respect to the position of the optical axis 2A of the other deposition camera 12 in each deposition camera 12. [ Each of the deposition cameras 12 photographs another portion of the outer peripheral portion of the substrate W. [ Each deposition camera 12 photographs the boundary between the flat portion Wp1 and the bevel portion Wp2 in the back surface WR of the substrate W. [ Each of the deposition cameras 12 photographs the individual portions of the surface of the deposition mask M. [ Each deposition camera 12 takes a mask mark Mm on the surface of the deposition mask M. [

Each of the deposition cameras 12 is fixed to a support frame 18 mounted on a vacuum tank 16. The support frame 18 is an example of the upper structure and supports the deposition camera 12, the driving source 15, and the like. The support frame 18 penetrates in the vertical direction and has a photographing hole 8H for photographing the inside of the vacuum chamber 16 in the deposition camera 12. [ Each photographic hole 8H is a hole in each of the deposition cameras 12. The position of the optical axis 2A of one deposition camera 12 is fixed with respect to the position of the optical axis 2A of the other deposition camera 12. [

The support frame 18 is mechanically connected to the vacuum chamber 16 through a connection 19. That is, the vapor deposition apparatus is configured such that the relative position between the substrate W and the deposition mask M, such as the deposition camera 12, the driving source 15, and the transfer mechanism 20, The support frame 18 and the connection portion 19 are interposed. The connection portion 19 is provided with a vibration-proof function for suppressing the transmission of vibration from the vacuum chamber 16 to the support frame 18. The connecting portion 19 is, for example, an anti-vibration rubber, and particularly suppresses the inherent vibration frequency of the support frame 18 and transmission of the vibration of the natural frequency of each constitution supported by the support frame 18. [

Each of the deposition cameras 12 is connected to the image processing unit 31. [ The image processing section 31 is an example of a positioning section and executes a process for specifying the center (substrate position) of the substrate W by using an image picked up by each deposition camera 12. [ The image processing unit 31 executes the process of specifying the center (mask position) of the deposition mask M by using the image captured by each deposition camera 12. The substrate position and the mask position specified by the image processing section 31 are used for matching the position of the substrate W with the position of the deposition mask M. [

The image processing unit 31 is provided with a central processing unit and a memory, and is not limited to software processing the substrate position specifying process or the mask position specifying process. For example, the image processing section 31 may be provided with dedicated hardware (an application-specific integrated circuit (ASIC)) for executing at least a part of various processes. That is, the image processing unit 31 is configured as a circuit including one or more dedicated hardware circuits such as an ASIC, one or more processors (microcomputers) operating according to a computer program (software), or a combination thereof.

The driving source (15) outputs power to be transmitted to the transmission mechanism (20). The transfer mechanism 20 has a thermally conductive plate 21, a resistance heating heater 22, and a temperature sensor 23. The transfer mechanism 20 is constructed by connecting a mechanism for connecting the drive source 15 and the substrate holder 13, a mechanism for connecting the drive source 15 and the mask base 14, and a drive source 15 and the thermally conductive plate 21 .

The thermally conductive plate 21 has a surface that is in surface contact with the back surface WR of the substrate W. [ The surface of the thermally conductive plate 21 is formed on a surface suitable for transferring the heat quantity of the thermally conductive plate 21 to the substrate W. [ The resistance heating heater 22 and the temperature sensor 23 are located inside the thermally conductive plate 21. The heat conduction plate 21 transfers the amount of heat of the resistance heating heater 22 to the substrate W through surface contact with the back surface WR of the substrate W. [ The thermally conductive plate 21 elevates the temperature of the substrate W through the temperature increase of the resistance heater 22. The thermally conductive plate 21 lowers the temperature of the substrate W through the temperature drop of the resistance heating heater 22 or the distance between the back surface WR of the substrate W and the thermally conductive plate 21. [

The resistance heating heater 22 heats the heat conduction plate 21. The temperature adjusting unit 33 is connected to the resistance heating heater 22 and supplies a current for heating the heat conduction plate 21 to the resistance heating heater 22. [ The resistance heating heater 22 is connected to the temperature adjusting unit 33 and is heated according to the current supplied by the temperature adjusting unit 33.

The temperature sensor 23 detects the temperature of the thermally conductive plate 21. The temperature adjusting unit 33 is connected to the temperature sensor 23 and acquires the temperature detected by the temperature sensor 23 from the temperature sensor 23. [

The temperature adjusting unit 33 has data for correlating the temperature of the thermally conductive plate 21 acquired from the temperature sensor 23 with the temperature of the substrate W, which is an example of an adjustment target. The temperature adjusting unit 33 can grasp the temperature of the substrate W from the temperature of the thermally conductive plate 21 acquired from the temperature sensor 23. [ Thereby, the temperature adjusting unit 33 can control the temperature of the thermally conductive plate 21, that is, the temperature of the substrate W. The temperature adjusting unit 33 sets the target temperature of the substrate W. [ The target temperature of the substrate W is a temperature sufficiently higher than the temperature of the substrate W when the substrate W is carried into the vacuum chamber 16. [ The temperature of the substrate W when brought into the vacuum chamber 16 is 23 deg. C which is room temperature, for example, and the target temperature of the substrate W is, for example, 50 deg. Further, the temperature adjusting unit 33 sets the target temperature of the substrate W to the temperature reached only by the supply of the heat amount by the resistance heating heater 22 and the stop. That is, the temperature adjusting unit 33 sets the target temperature of the substrate W at a high temperature that does not require a mechanism for cooling the substrate W, separately. When the evaporation material is discharged from the evaporation source 11, the temperature adjusting unit 33 adjusts the temperature detected by the temperature sensor 23 (that is, the temperature of the substrate W) so that the temperature of the substrate W becomes the target temperature. The current supplied to the resistance heater 22 is controlled.

The temperature adjusting unit 33 is provided with a central processing unit and a memory, and is not limited to the processing of all temperature adjustment processing by software. For example, the temperature regulating unit 33 may be provided with dedicated hardware (an application specific integrated circuit (ASIC)) for executing at least a part of various processes. That is, the image processing unit 31 is configured as a circuit including one or more dedicated hardware circuits such as an ASIC, one or more processors (microcomputers) operating according to a computer program (software), or a combination thereof.

The drive source 15 is connected to the drive processing section 32. The drive processing unit 32 executes the drive process of the transfer mechanism 20 through the output of the drive source 15. The drive processing section 32 is provided with a central processing unit and a memory and is not limited to processing the drive processing of the drive source 15 and the transfer mechanism 20 all by software. For example, the drive processing section 32 may include dedicated hardware (an application-specific integrated circuit (ASIC)) for executing at least a part of various processes. That is, the drive processing unit 32 is configured as a circuit including at least one dedicated hardware circuit such as an ASIC, at least one processor (microcomputer) operating according to a computer program (software), or a combination thereof.

The transfer mechanism 20 receives the power of the driving source 15 and moves the substrate holder 13 in the horizontal direction. The transfer mechanism 20 receives the power of the driving source 15 and rotates the mask base 14, the substrate holder 13 and the thermally conductive plate 21 in the circumferential direction of the substrate W. The drive processing section 32 switches the independent movement of the substrate holder 13, the independent movement of the mask base 14, and the movement of the substrate holder 13 and the mask base 14 and the thermally conductive plate 21 in unison .

The transfer mechanism 20 receives the power of the driving source 15 to elevate the mask base 14, the substrate holder 13, and the thermally conductive plate 21. The drive processing section 32 switches the independent lifting and lowering of the substrate holder 13 and the independent lifting and lowering of the mask base 14 and the elevation and descent of the substrate holder 13 and the mask base 14 and the thermally conductive plate 21 together .

Independent movement of the substrate holder 13 in the horizontal direction or independent rotation of the substrate holder 13 is used, for example, in matching of the substrate position and the mask position. Independent rotation of the mask base 14 is used to place the deposition mask M at a predetermined position. The independent lifting and lowering of the substrate holder 13 is used, for example, for bringing in and out of the substrate W and for arranging the substrate W at a predetermined position of the vapor deposition. The independent lifting and lowering of the mask base 14 is used, for example, in the loading and unloading of the deposition mask M and in the arrangement of the deposition mask M at predetermined positions of the deposition.

2 shows a planar structure of the substrate W in a plane opposed to the back surface WR of the substrate W in the vapor deposition apparatus. In FIG. 2, the substrate W is formed in a disc shape for the sake of convenience in explanation, and three substrate marks Wm provided on the substrate W and a deposition mask M Are superimposed on the three mask marks Mm included in the mask mark Mm.

As shown in Fig. 2, the substrate W is arranged in the arrangement area WA, and the deposition mask M is arranged in the arrangement area MA. The position of the mask mark Mm is set so as to be positioned outside the outline E of the substrate W. [ The mask mark Mm has a rectangular shape when viewed from a plane facing the back surface WR of the substrate W, but may have a shape other than a rectangular shape, for example, a cross shape.

An area photographed by each of the deposition cameras 12 is a photographing range 2Z and is distributed substantially evenly in the circumferential direction of the arrangement area WA. The optical axis 2A of each deposition camera 12 is positioned at the center of each shooting range 2Z. Based on the conveying accuracy of the substrate W so that the boundary between the flat portion Wp1 and the bevel portion Wp2 is included in the photographing range 2Z and the individual mask marks Mm are included in the respective photographing ranges 2Z, The position and size of the photographing range 2Z of the position are set.

3 is an example of an image taken by the deposition camera 12. As shown in Fig.

As shown in Fig. 3, the image includes the image IMW of the substrate W and the background image IMB of the substrate W. As shown in Fig. The portion of the image IMW of the substrate W having a relatively high brightness is the image of the flat portion Wp1, that is, the first image IM1. In contrast, the portion of the substrate W with a relatively low brightness is the image of the bevel portion Wp2, that is, the second phase IM2. The brightness on the background of the substrate W is lower than the brightness of the first image IM1 and higher than the brightness of the second image IM2.

Here, the outline E of the substrate W is an outline connecting the outermost points on the substrate W, and is also an outline of the bevel portion Wp2. This bevel portion Wp2 is usually formed of a curved surface having a predetermined curvature. The curved surface of the bevel portion Wp2 gradually lowers the brightness of the image IMW of the substrate W toward the outline E of the substrate W and the boundary between the second image IM2 and the background image IMB is obscured . And when the outline E of the substrate W is detected from the boundary between the second phase IM2 and the background image IMB, a large error occurs in the accuracy of the position. In particular, in the case of detection requiring a precision of several mu m at the position of the substrate W, the unclearness at the boundary becomes a large error.

In contrast, the boundary between the bevel portion Wp2 and the flat portion Wp1 is a boundary where the plane direction of the substrate W is changed. For example, in the imaging from the direction opposite to the flat portion Wp1, it is clearly detected It is also a boundary. Therefore, if the boundary between the first and second phases IM1 and IM2 is specified as a part of the outer shape of the substrate W, in the detection of the position of the substrate W using this outer shape, .

The image processing section 31 performs edge detection based on the contrast of the image photographed by the deposition camera 12 and extracts the boundary between the first image IM1 and the second image IM2. The image processing unit 31 specifies the boundary between the extracted boundary, that is, the flat portion Wp1 and the bevel portion Wp2 as a part of the outer shape of the substrate W. [ The image processing section 31 stores the relative positions of the plurality of deposition cameras 12 in a unique coordinate system (for example, XY coordinate system), and the position of the optical axis 2A of the deposition camera 12, The position of the photographing range 2Z of the camera 12 is determined in this coordinate system. The image processing section 31 calculates the boundary between the first image IM1 and the second image IM2 in this coordinate system, thereby specifying a part of the outer shape of the substrate W. [

Action

Prior to performing the deposition of the substrate W, the deposition apparatus performs specific processing of the substrate position and specific processing of the mask position. The deposition apparatus irradiates light on the back surface WR of the substrate W mounted on the substrate holder 13 in the specific processing of the substrate position and the specific processing of the mask position. The deposition apparatus further includes an image forming unit for forming an image including the first image IM1 by the light reflected by the flat portion Wp1 and the second image IM2 by the light reflected by the bevel portion Wp2 to the deposition camera 12 It shoots. Next, the image processing section 31 acquires an image taken by the deposition camera 12. [

The image processing section 31 uses the image captured by the deposition camera 12 and extracts the boundary between the flat section Wp1 and the bevel section Wp2 based on the contrast of the image. Then, the image processing section 31 calculates the substrate position so that an imaginary circle centering on the substrate position passes through each boundary. Further, the image processing section 31 uses the image photographed by the deposition camera 12 and extracts the mask mark Mm. Then, the image processing section 31 calculates the mask position so that an imaginary circle centered at the mask position passes through each mask mark Mm. Further, the deposition apparatus drives the transfer mechanism 20 to move the substrate holder 13 or the mask base 14 so as to match the substrate position and the mask position.

It is also possible to rotate the substrate W or the deposition mask M every time the image is photographed by one deposition camera in the process of specifying the substrate position or the process of specifying the mask position. Particularly, the position of the substrate mark Wm differs from one substrate W to another, and in a method of fixing each substrate W to a common specific position, when the substrate W in which the substrate mark Wm can not be photographed exists . In this case, it is possible to rotate the substrate W with respect to the deposition camera 12 every time one substrate mark Wm is photographed. The relative position between the substrate marks Wm can be grasped in accordance with the rotation angle of the substrate W in the system of photographing a plurality of substrate marks Wm by rotating the substrate W. [ Further, the rotation angle of the substrate W can be detected by a detection unit for detecting the rotation angle, and for example, an encoder can be used as the detection unit.

4, in the deposition of the substrate W, the deposition apparatus is operated such that the substrate position and the mask position are matched first, and then the transfer mechanism 20 is driven to align the substrate position and the mask position, The back surface WR of the wafer W is brought into surface contact with the heat conduction plate 21. Further, the deposition apparatus sets the target temperature of the substrate W to a temperature reached only by the supply of the heat amount by the resistance heating heater 22 and the stop. That is, the deposition apparatus sets the target temperature of the substrate W to a temperature high enough not to require a mechanism for cooling the substrate W. [ When the evaporation material is discharged from the evaporation source 11, on the basis of the detection temperature (that is, the temperature of the substrate W) by the temperature sensor 23 so that the temperature of the substrate W becomes the target temperature And supplies a current to the resistance heater 22.

Next, the deposition apparatus sublimates the deposition material from the deposition source 11 by integrally rotating the mask base 14 and the substrate holder 13 together with the thermally conductive plate 21 in the circumferential direction of the substrate W. The deposition apparatus rotates the substrate W adjusted to the target temperature together with the deposition mask M while maintaining the substrate position and the mask position matched with each other and deposits the deposition material M on the surface WF of the substrate W, .

As described above, according to the above-described embodiment, the following effects are obtained.

(1) A temperature higher than the temperature at the time of being brought into the vacuum chamber 16 is set as the target temperature of the adjustment object (for example, the substrate W). The current to be supplied to the resistance heating heater 22 is controlled based on the temperature of the substrate W (for example, the temperature detected by the temperature sensor 23) so that the temperature of the substrate W reaches the target temperature . Accordingly, it is not necessary to cool the substrate W separately due to the target temperature being close to the room temperature, and it is possible to reach the target temperature only by the amount of heat supplied from the resistance heating heater 22 . As a result, it is possible to reduce the difference between the temperature of the substrate W and the target temperature, without separately using a configuration for cooling the substrate W, as compared with the temperature control using the temperature control water.

(2) As the evaporation material is discharged from the evaporation source 11, the substrate W and the evaporation mask M rotate in the circumferential direction of the substrate W. This makes it possible to increase the uniformity of the evaporation material in the substrate W. [ Since the difference between the temperature of the substrate W and the target temperature can be reduced in a state where the uniformity of the evaporation material is increased, it becomes possible to enhance the uniformity of the properties of the evaporation material adhered to the substrate W.

(3) Since the heat amount of the resistance heating heater 22 is transmitted to the substrate W through the surface contact between the heat conduction plate 21 and the back surface WR of the substrate W, the temperature of the resistance heating heater 22 It is possible to improve the followability of the temperature of the substrate W to be processed.

(4) The relative position of the substrate W and the thermally conductive plate 21 is suppressed from deviating by vibration. As a result, even when the substrate W, the deposition mask M and the thermal conductive plate 21 are integrally rotated, accuracy of the position of the substrate W with respect to the thermal conductive plate 21 is increased, It is possible to improve the adjustment precision of the temperature in the case where the temperature is high.

(5) The flat portion Wp1 and the bevel portion W2 based on the first phase IM1 by the light reflected by the flat portion Wp1 and the contrast of the second phase IM2 by the light reflected by the bevel portion Wp2, Since the position of the substrate W is detected from the boundary of the portion Wp2, it is possible to improve the accuracy of detecting the position of the substrate W. [ As a result, the precision of the position of the substrate W, and hence the accuracy of the position of the substrate W with respect to the resistance heating heater 22, can be increased, thereby making it possible to improve the adjustment accuracy of the temperature of the substrate W .

(6) In particular, since the position of the substrate W is detected by using the boundary between the flat portion Wp1 and the bevel portion Wp2, the substrate W having no substrate mark Wm is also detected It is possible to do. Even when the substrate W does not have sufficient transparency or is opaque and detection of the position of the substrate W is required by photographing from a surface having no substrate mark Wm, W can be detected.

Further, the above-described embodiment can be implemented by suitably changing as follows.

Temperature detection

The temperature sensor 23 is not limited to the configuration for detecting the temperature of the thermally conductive plate 21, and may be a sensor for directly detecting the temperature of the adjustment object. It is possible to use a radiation thermometer for such a sensor. When a radiation thermometer is used as the temperature sensor 23, the radiation thermometer may be installed in the deposition apparatus so as to be able to detect thermal energy radiated from the adjustment object. Further, the deposition apparatus may be provided with two or more radiation thermometers. When a radiation thermometer is used as the temperature sensor 23, the temperature adjusting unit 33 may not hold data for matching the temperature of the thermally conductive plate 21 with the temperature of the adjustment object.

Adjustment target

In the vapor deposition apparatus, it is also possible to use the vapor deposition mask M as an object of adjustment of the temperature by the temperature adjusting section 33. In addition, in the vapor deposition apparatus, it is also possible to adjust the temperature by the temperature adjusting section 33 to both the substrate W and the vapor deposition mask M.

When the deposition material is deposited on the substrate W, it is also possible to make the substrate W and the deposition mask M in surface contact by magnetic force. At this time, the temperature of the deposition mask M is adjusted through the contact between the deposition mask M and the substrate W, if the temperature of the deposition mask M is to be adjusted. Since the deposition mask M and the surface WF of the substrate W are in surface contact with each other, it is also possible to increase the precision of adjusting the shape of the deposit by the deposition material to the shape of the deposition mask M.

Resistance heating heater

In addition to the heat conduction plate 21, the evaporation apparatus can also incorporate a new resistance heating heater in the substrate holder 13 or the mask base 14. It is also possible to omit the resistance heating heater 22 and to incorporate a new resistance heating heater in the substrate holder 13 or the mask base 14 in the vapor deposition apparatus.

Retention mechanism

The holding mechanism may be configured to move the substrate W in parallel with the evaporation source 11 when the evaporation material is deposited on the substrate W. Or the substrate W may be stopped with respect to the evaporation source 11 when the evaporation material is deposited on the substrate W. [ It is also possible to increase the uniformity of the evaporation material deposited on the surface of the substrate W and to reduce the thickness of the substrate W when the substrate W is integrally rotated with the evaporation mask M and the thermally conductive plate 21. [ It is also possible to suppress the fluctuation of the temperature during the rotation of the wafer W. As a result, an effect similar to the above-mentioned item (2) is obtained.

In the vapor deposition apparatus, the connection portion 19 may be omitted, and the vacuum chamber 16 may directly support the support frame 18. [ Or the vacuum chamber 16 may directly support the holding mechanism.

The lower structure supporting the support frame 18 may be a chamber other than the vacuum chamber 16, or another structure provided in an environment in which the vacuum chamber 16 is installed.

Substrate position

The image processing unit 31 detects the position of the substrate W only from the position of the boundary between the extracted flat portion Wp1 and the bevel portion Wp2. The image processing section 31 changes the position of the substrate W by using the position of the boundary between the extracted flat portion Wp1 and the bevel portion Wp2 and other information for detecting the position of the substrate W Can be detected. Other information for detecting the position of the substrate W is the position of the feature point of the notch or the like provided on the substrate W, the rotation angle of the substrate W, and the like.

The boundary used by the image processing section 31 for specifying the position of the substrate W may be one position on the outer peripheral portion of the substrate W or two or more positions.

For example, the shape of the boundary between the flat portion Wp1 and the bevel portion Wp2 is microscopically different for each processing of the bevel portion Wp2, that is, for each substrate W, There is a case. In the configuration for detecting the position of the substrate W from one boundary of the outer peripheral portion, the shape of the boundary between the flat portion Wp1 and the bevel portion Wp2 all over the substrate W is collectively collected do. The position of the substrate W is detected by detecting which of the peripheral edges the shape of the boundary between the extracted flat portion Wp1 and the bevel portion Wp2 is in one of the peripheral portions.

The substrate position detected by the image processing section 31 is a feature point other than the center calculated from the center of the substrate W, the outline E of the substrate W, the center or outline E of the substrate W, It is possible to use any combination of these.

The number of deposition cameras 12 provided in the deposition apparatus may be one, two, or four or more. When the number of the deposition cameras 12 is one or two, the position of the substrate W is detected by using information different from the image pickup result of the deposition camera 12 as described above.

The back surface WR of the substrate W may be provided with the substrate mark Wm. In this case, the deposition camera 12 photographs the substrate mark Wm located on the back surface WR, and the image processing unit 31 performs image processing on the result of photographing the deposition camera 12, It is also possible to calculate the substrate position.

IM1: 1st phase IM2: 2nd phase
M: deposition mask W: substrate
WF: Surface Wm: Substrate mark
WR: back side Wp1: flat side
Wp2: Bevel part 11: Deposition source
12: deposition camera 13: substrate holder
14: mask base 15: driving source
16: Vacuum tank 17: Exhaust system
18: support frame 19: connection
20: transmission mechanism 21: thermally conductive plate
22: resistance heating heater 23: temperature sensor
31: image processor 32: drive processor
33:

Claims (6)

An evaporation source located in a vacuum chamber;
A holding mechanism for holding the substrate in a state in which the vapor source is directed to the surface of the substrate and for holding the vapor deposition mask between the vapor source and the substrate,
A resistance heating heater for adjusting at least one of the substrate and the deposition mask to be an object of temperature adjustment and in thermal contact with the adjustment object to adjust the temperature of the adjustment object,
And a temperature adjusting section for controlling the current supplied to the resistance heating heater based on the temperature of the adjustment object,
Wherein a temperature higher than the temperature of the object to be adjusted when brought into the vacuum chamber is the target temperature of the object to be adjusted,
Wherein the temperature adjusting unit comprises:
Wherein the target temperature when the evaporation material is discharged from the evaporation source is set to a temperature reached only by the supply and stop of the heat amount by the resistance heating heater. The method according to claim 1,
Wherein the holding mechanism holds the resistance heating heater and when the evaporation material is discharged from the evaporation source, the substrate, the deposition mask, and the resistance heating heater are integrated and rotated in the circumferential direction of the substrate / RTI > 3. The method according to claim 1 or 2,
Wherein the object to be adjusted is the substrate,
Wherein the resistance heating heater is embedded in a heat conduction plate which is in surface contact with the back surface of the substrate,
Wherein the holding mechanism holds the thermally conductive plate and when the evaporation material is discharged from the evaporation source, the substrate and the evaporation mask are integrated with the thermally conductive plate to rotate them in the circumferential direction of the substrate. Device. The method of claim 3,
Wherein the holding mechanism integrally includes the substrate and the evaporation mask and the thermally conductive plate in a state in which the surface of the substrate and the evaporation mask are in surface contact when the evaporation material is discharged from the evaporation source, To the deposition apparatus. 3. The method according to claim 1 or 2,
An upper structure connected to the holding mechanism,
A lower structure for supporting the upper structure,
And a connection portion disposed between the lower structure and the upper structure for connecting the upper structure and the lower structure,
Wherein the connection portion has a vibration preventing function for suppressing transmission of vibration from the lower structure to the upper structure. 3. The method according to claim 1 or 2,
Wherein the object to be adjusted is the substrate,
An imaging section that faces the back surface of the substrate and captures the deposition mask and the back surface of the substrate,
And a positioning unit for matching the position of the deposition mask with the position of the substrate based on a result of imaging the imaging unit,
The position determining section determines the boundary between the flat portion and the bevel portion based on the first phase by the light reflected by the flat portion of the substrate and the contrast of the second phase by the light reflected by the bevel portion connected to the flat portion And the position of the substrate is detected by using a part of the extracted outer shape as a part of the outer shape of the substrate.

Images