JP6086731B2 - Substrate processing equipment - Google Patents

Description

The present invention relates to a substrate processing equipment.

  In order to perform various processes on various substrates such as a semiconductor substrate, a liquid crystal display substrate, a plasma display substrate, an optical disk substrate, a magnetic disk substrate, a magneto-optical disk substrate or a photomask substrate, It is used. In a rotary substrate processing apparatus, a substrate is held by a rotation holding unit, and various processes are performed in a rotated state. Therefore, it is required that the substrate is held by the rotation holding unit in a state where the center of the substrate and the rotation center of the rotation holding unit coincide.

  In the substrate position detection apparatus described in Patent Document 1, a light-scattering panel having an opening is provided above the substrate placed on the placement unit. In a state where light is irradiated to the lower surface of the panel, the wafer and its peripheral part are photographed from above by the camera through the opening of the panel. In this case, in the image obtained by the camera, the region including the edge (edge) of the substrate appears to shine uniformly when illuminated by the light from the panel. On the other hand, the area of the placement portion appears black even when illuminated by light from the panel. A large contrast is generated between the area of the substrate and the area of the placement portion, so that the edge of the substrate is clearly recognized.

JP 2010-153769 A

  As described above, according to the substrate position detection device of Patent Document 1, since the end of the substrate can be recognized, the center of the substrate can be estimated based on the end of the substrate.

  However, a bevel portion that is inclined or curved from the main surface is formed between the flat main surface of the substrate and the outermost peripheral portion of the substrate. There are individual differences in the shape of the surface of the bevel portion of the substrate. For this reason, in the image of the substrate, a bevel portion may appear and a bevel portion may not appear. Further, the contrast of the bevel portion in the image varies depending on the substrate. Therefore, the position of the end portion of the main surface of the substrate cannot be determined accurately. As a result, the center of the substrate cannot be determined accurately.

An object of the present invention is to provide a substrate processing equipment which can accurately determine the position of the end portion of the main surface of the substrate.

(1) A substrate processing apparatus according to a first aspect of the present invention is a substrate processing apparatus for processing a substrate having at least a part of a circular outer peripheral part and a flat main surface, and the inner side of the outermost peripheral part of the substrate. A film forming unit for forming a film of a processing solution on the main surface of the substrate excluding a peripheral portion of a predetermined width on the main surface of the substrate, and light on at least a part of the film on the main surface of the substrate and the peripheral portion Irradiation and detection of the amount of light received from the substrate and the received light data corresponding to the amount of light received by the received light amount detection unit, and the outermost periphery of the substrate from the reference position in the peripheral edge on the main surface of the substrate A position determining unit that determines the position of the end portion of the main surface of the substrate based on a change in the received light data in the first direction toward the portion , the position determining unit being a predetermined distance from the center of the substrate the position is a shall be determined as the reference position.

  In this substrate processing apparatus, a film of the processing liquid is formed on the main surface of the substrate except for a peripheral portion having a predetermined width on the main surface of the substrate inside the outermost peripheral portion of the substrate. Light is irradiated to at least a part of the film on the main surface of the substrate and the peripheral portion, and reflected light from the substrate is received. Further, the received light data corresponding to the received light amount of the received light amount detection unit is acquired.

  Here, the main surface of the substrate is flat and no film is formed on the periphery of the main surface. Therefore, the amount of light received based on the reflected light from the peripheral edge is substantially constant. On the other hand, the bevel portion between the end portion of the main surface of the substrate and the outermost peripheral portion of the substrate is inclined or curved with respect to the main surface of the substrate. Therefore, the amount of light received based on the reflected light from the bevel portion is different from the amount of light received based on the reflected light from the peripheral portion. Thereby, the amount of light received based on the reflected light from the substrate changes with the end of the main surface of the substrate as a boundary. Therefore, the position of the end portion of the main surface of the substrate can be determined based on the change in the received light data in the first direction from the reference position in the peripheral portion on the main surface of the substrate toward the outermost peripheral portion of the substrate.

In this case, the position where the light reception data changes is not affected by the surface shape and surface state of the bevel portion. Therefore, even when there are individual differences in the surface shape and surface state of the bevel portion of the substrate, the position of the end portion of the main surface of the substrate can be accurately determined. As a result, it becomes possible to accurately measure the width of the peripheral edge between the end of the film on the main surface of the substrate and the end of the main surface of the substrate. Further, the position determining unit determines a position at a predetermined distance from the center of the substrate as a reference position. In this case, the reference position is easily determined based on the size of the substrate. Thereby, the position of the edge part of the main surface of a board | substrate can be determined correctly and easily.

(2) A substrate processing apparatus according to a second aspect of the present invention is a substrate processing apparatus for performing processing on a substrate having at least a part of a circular outer peripheral part and a flat main surface, and the inner side of the outermost peripheral part of the substrate. A film forming unit for forming a film of a processing solution on the main surface of the substrate excluding a peripheral portion of a predetermined width on the main surface of the substrate, and light on at least a part of the film on the main surface of the substrate and the peripheral portion Irradiation and detection of the amount of light received from the substrate and the received light data corresponding to the amount of light received by the received light amount detection unit, and the outermost periphery of the substrate from the reference position in the peripheral edge on the main surface of the substrate A position determining unit that determines the position of the end portion of the main surface of the substrate based on a change in the light reception data in the first direction toward the portion, and the position determination unit determines the value of the light reception data corresponding to the reference position. After acquiring as a value of 1, for the acquired first value The value of the light reception data having a 1 relationship acquired as the second value is the position of the substrate corresponding to the second value obtained as to determining the position of the end portion of the main surface of the substrate.

In this substrate processing apparatus, a film of the processing liquid is formed on the main surface of the substrate except for a peripheral portion having a predetermined width on the main surface of the substrate inside the outermost peripheral portion of the substrate. Light is irradiated to at least a part of the film on the main surface of the substrate and the peripheral portion, and reflected light from the substrate is received. Further, the received light data corresponding to the received light amount of the received light amount detection unit is acquired.
Here, the main surface of the substrate is flat and no film is formed on the periphery of the main surface. Therefore, the amount of light received based on the reflected light from the peripheral edge is substantially constant. On the other hand, the bevel portion between the end portion of the main surface of the substrate and the outermost peripheral portion of the substrate is inclined or curved with respect to the main surface of the substrate. Therefore, the amount of light received based on the reflected light from the bevel portion is different from the amount of light received based on the reflected light from the peripheral portion. Thereby, the amount of light received based on the reflected light from the substrate changes with the end of the main surface of the substrate as a boundary. Therefore, the position of the end portion of the main surface of the substrate can be determined based on the change in the received light data in the first direction from the reference position in the peripheral portion on the main surface of the substrate toward the outermost peripheral portion of the substrate.
In this case, the position where the light reception data changes is not affected by the surface shape and surface state of the bevel portion. Therefore, even when there are individual differences in the surface shape and surface state of the bevel portion of the substrate, the position of the end portion of the main surface of the substrate can be accurately determined. As a result, it becomes possible to accurately measure the width of the peripheral edge between the end of the film on the main surface of the substrate and the end of the main surface of the substrate. Further , the position of the substrate corresponding to the second value having the first relationship with respect to the first value corresponding to the reference position is determined as the position of the end portion of the main surface of the substrate. Thereby, the position of the edge part of the main surface of a board | substrate can be determined more correctly.

  (3) The first relationship may include that the second value is smaller than the first value by a certain rate or by a certain amount. In this case, the position of the end portion of the main surface of the substrate can be determined accurately and easily.

(4) A substrate processing apparatus according to a third aspect of the present invention is a substrate processing apparatus for processing a substrate having at least a part of a circular outer peripheral part and a flat main surface, and the inner side of the outermost peripheral part of the substrate. A film forming unit for forming a film of a processing solution on the main surface of the substrate excluding a peripheral portion of a predetermined width on the main surface of the substrate, and light on at least a part of the film on the main surface of the substrate and the peripheral portion Irradiation and detection of the amount of light received from the substrate and the received light data corresponding to the amount of light received by the received light amount detection unit, and the outermost periphery of the substrate from the reference position in the peripheral edge on the main surface of the substrate A position determining unit that determines the position of the end portion of the main surface of the substrate based on the change in the received light data in the first direction toward the portion, and the position determining unit is a second toward the center of the substrate from the outside of the substrate. Reference position based on the change in received light data in the direction of It is those determined.

In this substrate processing apparatus, a film of the processing liquid is formed on the main surface of the substrate except for a peripheral portion having a predetermined width on the main surface of the substrate inside the outermost peripheral portion of the substrate. Light is irradiated to at least a part of the film on the main surface of the substrate and the peripheral portion, and reflected light from the substrate is received. Further, the received light data corresponding to the received light amount of the received light amount detection unit is acquired.
Here, the main surface of the substrate is flat and no film is formed on the periphery of the main surface. Therefore, the amount of light received based on the reflected light from the peripheral edge is substantially constant. On the other hand, the bevel portion between the end portion of the main surface of the substrate and the outermost peripheral portion of the substrate is inclined or curved with respect to the main surface of the substrate. Therefore, the amount of light received based on the reflected light from the bevel portion is different from the amount of light received based on the reflected light from the peripheral portion. Thereby, the amount of light received based on the reflected light from the substrate changes with the end of the main surface of the substrate as a boundary. Therefore, the position of the end portion of the main surface of the substrate can be determined based on the change in the received light data in the first direction from the reference position in the peripheral portion on the main surface of the substrate toward the outermost peripheral portion of the substrate.
In this case, the position where the light reception data changes is not affected by the surface shape and surface state of the bevel portion. Therefore, even when there are individual differences in the surface shape and surface state of the bevel portion of the substrate, the position of the end portion of the main surface of the substrate can be accurately determined. As a result, it becomes possible to accurately measure the width of the peripheral edge between the end of the film on the main surface of the substrate and the end of the main surface of the substrate. Further , the reference position is easily determined based on the change in the received light data. Thereby, the position of the edge part of the main surface of a board | substrate can be determined correctly and easily.

  (5) The position determination unit obtains the value of the received light data corresponding to the outside of the substrate as the third value, and then sets the value of the received light data having the second relationship with respect to the acquired third value to the fourth value. And a position that is a predetermined distance away from the substrate position corresponding to the acquired fourth value in the second direction may be determined as the reference position.

  In this case, a position that is a predetermined distance away from the position of the substrate corresponding to the fourth value having the second relationship with respect to the third value corresponding to the outside of the substrate in the second direction is set as the reference position. Easily determined. Thereby, the position of the edge part of the main surface of a board | substrate can be determined correctly and easily.

  (6) The second relationship may include that the fourth value is larger than the third value by a certain percentage or a certain amount.

  In this case, the reference position is determined more accurately and easily. Thereby, the position of the edge part of the main surface of a board | substrate can be determined more correctly and easily.

(8) A substrate processing apparatus according to a fourth aspect of the present invention is a substrate processing apparatus for performing processing on a substrate having at least a part of a circular outer peripheral part and a flat main surface, and the inner side of the outermost peripheral part of the substrate. A film forming unit for forming a film of a processing solution on the main surface of the substrate excluding a peripheral portion of a predetermined width on the main surface of the substrate, and light on at least a part of the film on the main surface of the substrate and the peripheral portion Irradiation and detection of the amount of light received from the substrate and the received light data corresponding to the amount of light received by the received light amount detection unit, and the outermost periphery of the substrate from the reference position in the peripheral edge on the main surface of the substrate A position determining unit that determines the position of the end portion of the main surface of the substrate based on the change in the light reception data in the first direction toward the portion, and the position determining unit is based on reflected light from a plurality of positions on the substrate Receives the received light data corresponding to the received light amount of the received light amount detector. The position of the substrate is greater than the value of the acquired received data reaches a predetermined threshold may be determined as the reference position.

In this substrate processing apparatus, a film of the processing liquid is formed on the main surface of the substrate except for a peripheral portion having a predetermined width on the main surface of the substrate inside the outermost peripheral portion of the substrate. Light is irradiated to at least a part of the film on the main surface of the substrate and the peripheral portion, and reflected light from the substrate is received. Further, the received light data corresponding to the received light amount of the received light amount detection unit is acquired.
Here, the main surface of the substrate is flat and no film is formed on the periphery of the main surface. Therefore, the amount of light received based on the reflected light from the peripheral edge is substantially constant. On the other hand, the bevel portion between the end portion of the main surface of the substrate and the outermost peripheral portion of the substrate is inclined or curved with respect to the main surface of the substrate. Therefore, the amount of light received based on the reflected light from the bevel portion is different from the amount of light received based on the reflected light from the peripheral portion. Thereby, the amount of light received based on the reflected light from the substrate changes with the end of the main surface of the substrate as a boundary. Therefore, the position of the end portion of the main surface of the substrate can be determined based on the change in the received light data in the first direction from the reference position in the peripheral portion on the main surface of the substrate toward the outermost peripheral portion of the substrate.
In this case, the position where the light reception data changes is not affected by the surface shape and surface state of the bevel portion. Therefore, even when there are individual differences in the surface shape and surface state of the bevel portion of the substrate, the position of the end portion of the main surface of the substrate can be accurately determined. As a result, it becomes possible to accurately measure the width of the peripheral edge between the end of the film on the main surface of the substrate and the end of the main surface of the substrate. Further , the position of the substrate where the value of the received light data is larger than a predetermined threshold value is easily determined as the reference position. Thereby, the position of the edge part of the main surface of a board | substrate can be determined correctly and easily.

  In this case, the position where the light reception data changes is not affected by the surface shape and surface state of the bevel portion. Therefore, even when there are individual differences in the surface shape and surface state of the bevel portion of the substrate, the position of the end portion of the main surface of the substrate can be accurately determined. As a result, it becomes possible to accurately measure the width of the peripheral edge between the end of the film on the main surface of the substrate and the end of the main surface of the substrate.

  According to the present invention, the position of the end portion of the main surface of the substrate can be accurately determined.

1 is a schematic plan view of a substrate processing apparatus according to an embodiment of the present invention. It is the figure which looked at the application | coating process part, the development process part, and the washing-drying process part of FIG. 1 from the + Y direction side. It is the figure which looked at the heat processing part and washing | cleaning drying process part of FIG. 1 from the -Y direction side. It is the figure which looked at the conveyance part from the -Y direction side. It is the figure which looked at the coating processing unit from the + Z direction side. FIG. 5 is a diagram for explaining the operation of the hand of the transport mechanism of FIG. 4 when the substrate is carried into the coating processing unit of FIG. 2. It is a figure which shows the formation procedure of the anti-reflective film and resist film on the main surface of a board | substrate, and the removal range of each film | membrane. It is a figure which shows the formation procedure of the anti-reflective film and resist film on the main surface of a board | substrate, and the removal range of each film | membrane. It is a schematic diagram for demonstrating the edge part of a board | substrate. It is a top view of the board | substrate with which the antireflection film and the resist film were formed. It is a figure which shows typically one side of an edge exposure part. It is a figure which shows typically the other side surface of an edge exposure part. It is a typical side view of a state detection processing unit. It is a schematic plan view of a state detection processing unit. It is a figure for demonstrating the preparation method of peripheral part image data. It is a figure which shows the change of the gradation value of the peripheral part image of a board | substrate, and the peripheral part image. It is a figure for demonstrating the determination procedure of the position of the edge part of the main surface of a board | substrate. It is a flowchart which shows the determination process of the position of the edge part of the main surface of a board | substrate by the main controller of FIG. It is a block diagram which shows the structure of the control system of a substrate processing apparatus. It is a figure which shows distribution of the brightness of the peripheral part image displayed based on peripheral part image data. It is a flowchart which shows the state detection process of the peripheral part of the board | substrate by the main controller of FIG. It is a flowchart which shows the state detection process of the peripheral part of the board | substrate by the main controller of FIG.

  Hereinafter, a substrate processing apparatus and a substrate processing method according to embodiments of the present invention will be described with reference to the drawings. In the following description, the substrate means a semiconductor substrate, a liquid crystal display substrate, a plasma display substrate, a photomask glass substrate, an optical disk substrate, a magnetic disk substrate, a magneto-optical disk substrate, or a photomask substrate. Etc.

  The substrate used in this embodiment has at least a circular outer peripheral portion. For example, the outer peripheral portion excluding the positioning notch (orientation flat or notch) has a circular shape.

(1) Configuration of Substrate Processing Apparatus FIG. 1 is a schematic plan view of a substrate processing apparatus according to an embodiment of the present invention. 1 and subsequent drawings are provided with arrows indicating X, Y, and Z directions orthogonal to each other in order to clarify the positional relationship. The X direction and the Y direction are orthogonal to each other in the horizontal plane, and the Z direction corresponds to the vertical direction. In each direction, the direction in which the arrow points is the + direction, and the opposite direction is the-direction.

  As shown in FIG. 1, the substrate processing apparatus 100 includes an indexer block 11, a first processing block 12, a second processing block 13, a cleaning / drying processing block 14 </ b> A, a loading / unloading block 14 </ b> B, and a host computer 80. The cleaning / drying processing block 14A and the carry-in / carry-out block 14B constitute an interface block 14. The exposure device 15 is disposed adjacent to the carry-in / carry-out block 14B. In the exposure device 15, the substrate W is subjected to exposure processing by a liquid immersion method.

  The indexer block 11 includes a plurality of carrier placement units 111 and a conveyance unit 112. On each carrier placement section 111, a carrier 113 that houses a plurality of substrates W in multiple stages is placed.

  The transport unit 112 is provided with a main controller 114 and a transport mechanism 115. The main controller 114 controls various components of the substrate processing apparatus 100. The main controller 114 is connected to the host computer 80 by wired communication or wireless communication. Various data is transmitted and received between the main controller 114 and the host computer 80.

  The transport mechanism 115 has a hand 116 for holding the substrate W. The transport mechanism 115 transports the substrate W while holding the substrate W by the hand 116.

  A main panel PN is provided on the side surface of the transport unit 112. The main panel PN is connected to the main controller 114. The user can check the processing status of the substrate W in the substrate processing apparatus 100 on the main panel PN.

  In the vicinity of the main panel PN, an operation unit 90 (see FIG. 19 described later) including a keyboard, for example, is provided. The user can perform operation settings of the substrate processing apparatus 100 by operating the operation unit 90.

  The first processing block 12 includes a coating processing unit 121, a transport unit 122, and a heat treatment unit 123. The coating processing unit 121 and the heat treatment unit 123 are provided so as to face each other with the conveyance unit 122 interposed therebetween. Between the transport unit 122 and the indexer block 11, a substrate platform PASS1 on which the substrate W is placed and substrate platforms PASS2 to PASS4 (see FIG. 4) described later are provided. The transport unit 122 is provided with a transport mechanism 127 for transporting the substrate W and a transport mechanism 128 (see FIG. 4) described later.

  The second processing block 13 includes a development processing unit 131, a transport unit 132, and a heat treatment unit 133. The development processing unit 131 and the heat treatment unit 133 are provided to face each other with the transport unit 132 interposed therebetween. Between the transport unit 132 and the transport unit 122, a substrate platform PASS5 on which the substrate W is placed and substrate platforms PASS6 to PASS8 (see FIG. 4) described later are provided. The transport unit 132 is provided with a transport mechanism 137 for transporting the substrate W and a transport mechanism 138 (see FIG. 4) described later.

  The cleaning / drying processing block 14 </ b> A includes cleaning / drying processing units 161, 162 and a transport unit 163. The cleaning / drying processing units 161 and 162 are provided to face each other with the conveyance unit 163 interposed therebetween. The transport unit 163 is provided with transport mechanisms 141 and 142.

  Between the transport unit 163 and the transport unit 132, a placement / buffer unit P-BF1 and a later-described placement / buffer unit P-BF2 (see FIG. 4) are provided. The placement / buffer units P-BF1 and P-BF2 are configured to accommodate a plurality of substrates W.

  A substrate platform PASS9 and a later-described placement / cooling unit P-CP (see FIG. 4) are provided between the transport mechanisms 141 and 142 so as to be adjacent to the carry-in / carry-out block 14B. The placement / cooling unit P-CP has a function of cooling the substrate W (for example, a cooling plate). In the placement / cooling section P-CP, the substrate W is cooled to a temperature suitable for the exposure process.

  A transport mechanism 146 is provided in the carry-in / carry-out block 14B. The transport mechanism 146 carries the substrate W into and out of the exposure apparatus 15. The exposure apparatus 15 is provided with a substrate carry-in portion 15a for carrying in the substrate W and a substrate carry-out portion 15b for carrying out the substrate W.

(2) Configuration of Application Processing Unit and Development Processing Unit FIG. 2 is a view of the application processing unit 121, the development processing unit 131, and the cleaning / drying processing unit 161 of FIG. 1 as viewed from the + Y direction side.

  As shown in FIG. 2, the coating processing section 121 is provided with coating processing chambers 21, 22, 23, and 24 in a hierarchical manner. In each of the coating processing chambers 21 to 24, a coating processing unit 129 is provided. The development processing unit 131 is provided with development processing chambers 31, 32, 33, and 34 in a hierarchical manner. In each of the development processing chambers 31 to 34, a development processing unit 139 is provided.

  As shown in FIG. 2, the coating processing unit 129 includes a plurality of spin chucks 25 and a plurality of cups 27. As shown in FIG. 1, the coating processing unit 129 includes a plurality of processing liquid nozzles 28 that discharge processing liquid and a nozzle transport mechanism 29 that moves the processing liquid nozzles 28. Details of the coating processing unit 129 will be described later.

  The development processing unit 139 includes a plurality of spin chucks 35 and a plurality of cups 37, similarly to the coating processing unit 129. As shown in FIG. 1, the development processing unit 139 includes two development nozzles 38 that discharge the developer and a moving mechanism 39 that moves the development nozzles 38 in the X direction.

  In the development processing unit 139, first, the developer is supplied to each substrate W while the one development nozzle 38 moves in the X direction. Thereafter, the developer is supplied to each substrate W while the other developing nozzle 38 moves. When the developer is supplied from the developing nozzle 38 to the substrate W, the spin chuck 35 is rotated by a driving device (not shown). Thereby, the substrate W is rotated.

  In the present embodiment, the developing process is performed on the substrate W by supplying the developer to the substrate W in the development processing unit 139. In the present embodiment, different developing solutions are discharged from the two developing nozzles 38. Thereby, two types of developers can be supplied to each substrate W.

  The cleaning / drying processing unit 161 includes a plurality (four in this example) of cleaning / drying processing units SD1. In the cleaning / drying processing unit SD1, the substrate W before the exposure processing is cleaned and dried.

  As shown in FIGS. 1 and 2, a fluid box unit 50 is provided in the coating processing unit 121 so as to be adjacent to the development processing unit 131. Similarly, a fluid box unit 60 is provided in the development processing unit 131 so as to be adjacent to the cleaning / drying processing block 14A. In the fluid box unit 50 and the fluid box unit 60, fluid-related devices relating to the supply of chemicals to the coating processing unit 129 and the development processing unit 139 and the drainage and exhaustion from the coating processing unit 129 and the development processing unit 139 are stored. Is done. Fluid-related equipment includes conduits, fittings, valves, flow meters, regulators, pumps, temperature regulators, and the like.

(3) Configuration of Heat Treatment Unit and Washing / Drying Processing Unit FIG. 3 is a view of the heat treatment units 123 and 133 and the washing / drying processing unit 162 of FIG.

  As shown in FIG. 3, the heat treatment part 123 has an upper heat treatment part 301 provided above and a lower heat treatment part 302 provided below. The upper heat treatment section 301 and the lower heat treatment section 302 are provided with a plurality of heat treatment units PHP, a plurality of adhesion reinforcement processing units PAHP, and a plurality of cooling units CP. A local controller LC1 is provided at the top of the heat treatment unit 123.

  The local controller LC1 performs temperature control of the heat treatment unit PHP, the adhesion reinforcement processing unit PAHP, and the cooling unit CP in the heat treatment unit 123. Further, the local controller LC1 operates the nozzle transport mechanism 29 in the coating processing unit 129 of FIG. 5 described later, the operation of the spin chuck 25, the supply of the processing liquid to each processing liquid nozzle 28, and the rinsing liquid to the edge rinse nozzle 30. To control the supply and the like. Further, the local controller LC1 controls the operation of the transport mechanism 127 in FIG.

  In the heat treatment unit PHP, the substrate W is heated and cooled. In the adhesion reinforcement processing unit PAHP, adhesion reinforcement processing for improving the adhesion between the substrate W and the antireflection film is performed. Specifically, in the adhesion reinforcement processing unit PAHP, an adhesion enhancing agent such as HMDS (hexamethyldisilazane) is applied to the substrate W, and the substrate W is subjected to heat treatment. In the cooling unit CP, the substrate W is cooled.

  The heat treatment part 133 includes an upper heat treatment part 303 provided above and a lower heat treatment part 304 provided below. The upper heat treatment unit 303 and the lower heat treatment unit 304 are provided with a cooling unit CP, a plurality of heat treatment units PHP, and an edge exposure unit EEW. A local controller LC <b> 2 is provided at the top of the heat treatment unit 133.

  The local controller LC2 controls the temperature of the heat treatment unit PHP and the cooling unit CP in the heat treatment unit 133. The local controller LC2 controls the operation of the transport mechanism 137 shown in FIG. 1, and also controls the operation of the moving mechanism 39, the operation of the spin chuck 35, the supply of the developer to each developing nozzle 38, and the like. Details of the local controllers LC1 and LC2 will be described later.

  The cleaning / drying processing section 162 is provided with a plurality (five in this example) of cleaning / drying processing units SD2. In the cleaning / drying processing unit SD2, the substrate W after the exposure processing is cleaned and dried.

(4) Edge Exposure Unit State Detection Processing Unit In this example, as will be described later, the edge exposure unit EEW is provided with the state detection processing unit 580 of FIG. The state detection processing unit 580 detects the state of the peripheral edge of the substrate W. Based on the detection result, the substrate W spins so that the geometric center of the substrate W (hereinafter referred to as the center of the substrate W) coincides with the axis of the spin chuck 25 in the coating processing unit 129 (FIG. 2). It is determined whether or not it is placed on the chuck 25 and whether or not the flow rate of the rinse liquid discharged from the edge rinse nozzle 30 (FIG. 5) to the peripheral edge of the substrate W and the discharge position of the rinse liquid are appropriate. . The axis of the spin chuck 25 corresponds to the center of rotation of the substrate W.

  Hereinafter, the amount of displacement of the center of the substrate W with respect to the axis of the spin chuck 25 is referred to as the eccentric amount of the substrate W. When the amount of eccentricity of the substrate W exceeds a preset allowable upper limit value, or when the flow rate of the rinsing liquid discharged to the substrate W or the discharge position of the rinsing liquid is not appropriate, processing described later is performed.

  Thereafter, in the edge exposure unit EEW, exposure processing (edge exposure processing) of the peripheral portion of the substrate W is performed. By performing the edge exposure process on the substrate W, the resist film on the peripheral edge of the substrate W is removed during the subsequent development process. This prevents the resist film on the peripheral portion of the substrate W from peeling off and becoming particles when the peripheral portion of the substrate W comes into contact with another portion after the development processing.

  As described above, the edge exposure unit EEW has a function of detecting the state of the peripheral edge of the substrate W, and also has a function of performing edge exposure processing on the substrate W, thereby increasing the size and footprint of the substrate processing apparatus 100. Can be prevented.

(5) Configuration of Conveying Unit FIG. 4 is a diagram of the conveying units 122, 132, and 163 viewed from the −Y direction side.

  As shown in FIG. 4, the transfer unit 122 includes an upper transfer chamber 125 and a lower transfer chamber 126. The transfer unit 132 includes an upper transfer chamber 135 and a lower transfer chamber 136. The upper transfer chamber 125 is provided with a transfer mechanism 127, and the lower transfer chamber 126 is provided with a transfer mechanism 128. The upper transfer chamber 135 is provided with a transfer mechanism 137, and the lower transfer chamber 136 is provided with a transfer mechanism 138. The transport mechanisms 127, 128, 137, and 138 have hands H1 and H2, respectively.

  Substrate platforms PASS1 and PASS2 are provided between the transport unit 112 and the upper transport chamber 125, and substrate platforms PASS3 and PASS4 are provided between the transport unit 112 and the lower transport chamber 126. Substrate platforms PASS5 and PASS6 are provided between the upper transport chamber 125 and the upper transport chamber 135, and substrate platforms PASS7 and PASS8 are provided between the lower transport chamber 126 and the lower transport chamber 136. It is done.

  A placement / buffer unit P-BF1 is provided between the upper transfer chamber 135 and the transfer unit 163, and a placement / buffer unit P-BF2 is provided between the lower transfer chamber 136 and the transfer unit 163. . A substrate platform PASS9 and a plurality of placement / cooling units P-CP are provided so as to be adjacent to the carry-in / carry-out block 14B in the transport unit 163.

  The placement / buffer unit P-BF1 is configured so that the substrate W can be carried in and out by the transport mechanism 137 and the transport mechanisms 141 and 142 (FIG. 1). The placement / buffer unit P-BF2 is configured such that the substrate W can be carried in and out by the transport mechanism 138 and the transport mechanisms 141 and 142 (FIG. 1). Further, the substrate platform PASS9 and the placement / cooling unit P-CP are configured such that the substrate W can be carried in and out by the transport mechanisms 141 and 142 (FIG. 1) and the transport mechanism 146.

  In the present embodiment, the substrate platform PASS1 and the substrate platform PASS3 are loaded with the substrate W to be transferred from the indexer block 11 to the first processing block 12, and the substrate platform PASS2 and the substrate platform The substrate W to be transported from the first processing block 12 to the indexer block 11 is placed on the placement unit PASS4.

  Further, the substrate platform PASS5 and the substrate platform PASS7 are loaded with the substrate W to be transferred from the first processing block 12 to the second processing block 13, and the substrate platform PASS6 and the substrate platform. A substrate W transported from the second processing block 13 to the first processing block 12 is placed on the PASS 8.

  In addition, a substrate W transported from the second processing block 13 to the cleaning / drying processing block 14A is placed on the placement / buffer units P-BF1 and P-BF2, and the placement / cooling unit P-CP has The substrate W transferred from the cleaning / drying processing block 14A to the loading / unloading block 14B is placed, and the substrate W transferred from the loading / unloading block 14B to the cleaning / drying processing block 14A is placed on the substrate platform PASS9. The

(6) Operation of Substrate Processing Apparatus The operation of the substrate processing apparatus 100 will be described with reference to FIGS. A carrier 113 in which an unprocessed substrate W is accommodated is placed on the carrier placement portion 111 (FIG. 1) of the indexer block 11. The transport mechanism 115 transports the unprocessed substrate W from the carrier 113 to the substrate platforms PASS1 and PASS3 (FIG. 4). In addition, the transport mechanism 115 transports the processed substrate W placed on the substrate platforms PASS <b> 2 and PASS <b> 4 (FIG. 4) to the carrier 113.

  In the first processing block 12, the transport mechanism 127 (FIG. 4) causes the substrate W placed on the substrate platform PASS1 (FIG. 4) to adhere to the adhesion reinforcement processing unit PAHP (FIG. 3) and the cooling unit CP (FIG. 3). ), Coating treatment chamber 22 (FIG. 2), heat treatment unit PHP (FIG. 3), cooling unit CP (FIG. 3), coating treatment chamber 21 (FIG. 2), heat treatment unit PHP (FIG. 3), and substrate platform PASS5 ( It conveys in order to FIG.

  In this case, after the adhesion reinforcement processing is performed on the substrate W in the adhesion reinforcement processing unit PAHP, the substrate W is cooled to a temperature suitable for forming the antireflection film in the cooling unit CP. Next, in the coating processing chamber 22, an antireflection film is formed on the substrate W by the coating processing unit 129 (FIG. 2). Subsequently, after the heat treatment of the substrate W is performed in the heat treatment unit PHP, the substrate W is cooled to a temperature suitable for formation of the resist film in the cooling unit CP. Next, in the coating processing chamber 21, a resist film is formed on the substrate W by the coating processing unit 129 (FIG. 2). Thereafter, the substrate W is heat-treated in the heat treatment unit PHP, and the substrate W is placed on the substrate platform PASS5.

  In addition, the transport mechanism 127 transports the substrate W after the development processing placed on the substrate platform PASS6 (FIG. 4) to the substrate platform PASS2 (FIG. 4).

  The transport mechanism 128 (FIG. 4) is configured to adhere the substrate W placed on the substrate platform PASS3 (FIG. 4) to the adhesion reinforcement processing unit PAHP (FIG. 3), the cooling unit CP (FIG. 3), and the coating processing chamber 24 (FIG. 4). 2), sequentially transferred to the heat treatment unit PHP (FIG. 3), the cooling unit CP (FIG. 3), the coating treatment chamber 23 (FIG. 2), the heat treatment unit PHP (FIG. 3), and the substrate platform PASS7 (FIG. 4). Further, the transport mechanism 128 (FIG. 4) transports the substrate W after the development processing placed on the substrate platform PASS8 (FIG. 4) to the substrate platform PASS4 (FIG. 4). The processing contents of the substrate W in the coating processing chambers 23 and 24 (FIG. 2) and the lower thermal processing section 302 (FIG. 3) are the same as those in the coating processing chambers 21 and 22 (FIG. 2) and the upper thermal processing section 301 (FIG. 3). This is the same as the processing content of W.

  In the second processing block 13, the transport mechanism 137 (FIG. 4) uses the edge exposure unit EEW (FIG. 3) and the placement of the substrate W after the resist film formation placed on the substrate platform PASS5 (FIG. 4). It is sequentially conveyed to the cum buffer unit P-BF1 (FIG. 4).

  In this case, in the edge exposure unit EEW, the edge exposure processing of the substrate W and the state detection processing of the peripheral portion of the substrate W are performed, and the substrate W is placed on the placement / buffer unit P-BF1.

  Further, the transport mechanism 137 (FIG. 4) takes out the substrate W after the exposure processing and after the heat treatment from the heat treatment unit PHP (FIG. 3) adjacent to the cleaning / drying processing block 14A, and removes the substrate W from the cooling unit CP (FIG. 3). ), The development processing chamber 31 or the development processing chamber 32 (FIG. 2), the heat treatment unit PHP (FIG. 3), and the substrate platform PASS6 (FIG. 4) in this order.

  In this case, after the substrate W is cooled to a temperature suitable for the development processing in the cooling unit CP, the development processing unit 139 performs the development processing on the substrate W in the development processing chamber 31 or the development processing chamber 32. Thereafter, the substrate W is heat-treated in the heat treatment unit PHP, and the substrate W is placed on the substrate platform PASS6.

  The transport mechanism 138 (FIG. 4) uses the heat treatment unit PHP (FIG. 3), the edge exposure unit EEW (FIG. 3), and the placement of the substrate W after the resist film formation placed on the substrate platform PASS7 (FIG. 4). It is sequentially conveyed to the cum buffer unit P-BF2 (FIG. 4). Further, the transport mechanism 138 (FIG. 4) takes out the substrate W after the exposure processing and after the heat treatment from the heat treatment unit PHP (FIG. 3) adjacent to the back surface cleaning processing block 14, and removes the substrate W from the cooling unit CP (FIG. 3). ), The developing chamber 33 or the developing chamber 34 (FIG. 2), the heat treatment unit PHP (FIG. 3), and the substrate platform PASS8 (FIG. 4). The processing contents of the substrate W in the development processing chambers 33 and 34 and the lower thermal processing section 304 are the same as the processing contents of the substrate W in the development processing chambers 31 and 32 and the upper thermal processing section 303 described above.

  In the cleaning / drying processing block 14 </ b> A, the transport mechanism 141 (FIG. 1) performs the cleaning / drying processing unit of the cleaning / drying processing unit 161 on the substrate W placed on the placement / buffer units P-BF 1, P-BF 2 (FIG. 4). It conveys to SD1 (FIG. 2) and mounting and cooling part P-CP (FIG. 4) in order. In this case, after the cleaning / drying processing of the substrate W is performed in the cleaning / drying processing unit SD1, the temperature suitable for the exposure processing in the exposure apparatus 15 (FIGS. 1 to 3) in the placement / cooling unit P-CP. Then, the substrate W is cooled.

  The transport mechanism 142 (FIG. 1) transports the substrate W after the exposure processing placed on the substrate platform PASS9 (FIG. 4) to the cleaning / drying processing unit SD2 (FIG. 3) of the cleaning / drying processing unit 162 for cleaning. Then, the substrate W after the drying treatment is transferred from the cleaning / drying treatment unit SD2 to the heat treatment unit PHP (FIG. 3) of the upper heat treatment section 303 or the heat treatment unit PHP (FIG. 3) of the lower heat treatment section 304. In this heat treatment unit PHP, a post-exposure bake (PEB) process is performed.

  In the interface block 15, the transport mechanism 146 (FIG. 1) transfers the substrate W before exposure processing placed on the placement / cooling unit P-CP (FIG. 4) to the substrate carry-in unit 15 a (FIG. 1) of the exposure apparatus 15. Transport to. The transport mechanism 146 (FIG. 1) takes out the substrate W after the exposure processing from the substrate carry-out portion 15b (FIG. 1) of the exposure apparatus 15, and transports the substrate W to the substrate platform PASS9 (FIG. 4).

  If the exposure apparatus 15 cannot accept the substrate W, the substrate W before the exposure process is temporarily accommodated in the placement / buffer units P-BF1, P-BF2. When the development processing unit 139 (FIG. 2) of the second processing block 13 cannot accept the substrate W after the exposure processing, the substrate W after the exposure processing is placed on the placement / buffer units P-BF1 and P-BF2. Temporarily accommodated.

  In the present embodiment, the processing of the substrate W in the coating processing chambers 21 and 22, the development processing chambers 31 and 32 and the upper thermal processing units 301 and 303 provided in the upper stage, and the coating processing chambers 23 and 24 provided in the lower stage. The processing of the substrate W in the development processing chambers 33 and 34 and the lower thermal processing units 302 and 304 can be performed in parallel. Thereby, the throughput can be improved without increasing the footprint.

(7) Configuration of Application Processing Unit FIG. 5 is a diagram of the application processing unit 129 viewed from the + Z direction side. As shown in FIG. 5, each coating processing unit 129 includes a plurality of spin chucks 25, a plurality of cups 27, a plurality of processing liquid nozzles 28, a plurality of edge rinse nozzles 30, and a plurality of standby units 280. In the present embodiment, two spin chucks 25, cups 27, and edge rinse nozzles 30 are provided in each coating processing unit 129.

  Each spin chuck 25 is rotationally driven by a driving device (not shown) (for example, an electric motor) while holding the substrate W. The cup 27 is provided so as to surround the periphery of the spin chuck 25. At the time of standby, each processing liquid nozzle 28 is inserted into the standby unit 280. Each processing liquid nozzle 28 is supplied with various processing liquids (coating liquids) to be described later through a processing liquid pipe from a processing liquid storage section (not shown). Each processing liquid nozzle 28 is provided with a gripping portion 28a protruding upward.

  The coating processing unit 129 includes an edge rinse nozzle drive unit 30a and a rinse liquid supply system 30b. An edge rinse nozzle 30 is movably provided above the spin chuck 25. The edge rinse nozzle drive unit 30 a moves the edge rinse nozzle 30. The rinse liquid supply system 30 b supplies a rinse liquid (for example, a solvent for the processing liquid) to the edge rinse nozzle 30. The rinse liquid supply system 30 b includes a flow rate sensor that measures the flow rate of the rinse liquid supplied to the edge rinse nozzle 30. The edge rinse nozzle 30 discharges a rinse liquid onto the peripheral edge of the substrate W held by the spin chuck 25. The flow rate of the rinse liquid discharged from the edge rinse nozzle 30 onto the substrate W is adjusted by the rinse liquid supply system 30b.

  The coating processing unit 129 includes a nozzle transport mechanism 29 that transports the processing liquid nozzle 28. The nozzle transport mechanism 29 includes a nozzle gripping part 291 a and long gripping part moving mechanisms 291, 292, and 293. The gripper moving mechanism 292 is fixed to the transport unit 112 side in FIG. 2 so as to extend in the Y direction. The gripper moving mechanism 293 is fixed to the second processing block 13 in FIG. 2 so as to extend in the Y direction. The gripper moving mechanism 292 is provided with a ball screw 292a and a guide 292b extending in the Y direction. Similarly, the gripper moving mechanism 293 is provided with a ball screw 293a and a guide 293b extending in the Y direction.

  A gripper moving mechanism 291 is provided between the gripper moving mechanism 292 and the gripper moving mechanism 293 so as to extend in the X direction. Both ends of the gripper moving mechanism 291 are attached to guides 292b and 293b of the gripper moving mechanisms 292 and 293 so as to be movable in the Y direction. One end of the gripper moving mechanism 291 is engaged with the ball screw 292 a of the gripper moving mechanism 292. The other end of the gripper moving mechanism 291 is engaged with the ball screw 293 a of the gripper moving mechanism 293. The ball screws 292a and 293a are rotated by a motor (not shown). Thereby, the gripper moving mechanism 291 horizontally moves in the Y direction along the guides 292b and 293b.

  A nozzle grip 291a is attached to the gripper moving mechanism 291 so as to be movable in the X direction. The nozzle gripping part 291a has a pair of clamping arms 291b that clamp the gripping part 28a of each processing liquid nozzle 28. The pair of sandwiching arms 291b are moved in directions close to each other or in directions away from each other by a driving mechanism (not shown).

  In the coating processing unit 129, one of the plurality of processing liquid nozzles 28 is moved above the substrate W by the nozzle transport mechanism 29. The processing liquid is applied onto the rotating substrate W by discharging the processing liquid from the processing liquid nozzle 28 while the spin chuck 25 rotates. Further, the edge rinse nozzle 30 is moved from the predetermined standby position to the vicinity of the peripheral edge of the substrate W. Then, the rinsing liquid is discharged from the edge rinse nozzle 30 toward the peripheral edge of the rotating substrate W while the spin chuck 25 rotates, whereby the peripheral edge of the processing liquid applied to the substrate W is dissolved. Thereby, the processing liquid at the peripheral edge of the substrate W is removed.

  In the present embodiment, the treatment liquid for the antireflection film (antireflection liquid) is supplied from the treatment liquid nozzle 28 to the substrate W in the coating treatment unit 129 of the coating treatment chambers 22 and 24 in FIG. In the coating processing units 129 of the coating processing chambers 21 and 23, a resist film processing liquid (resist liquid) is supplied from the processing liquid nozzle 28 to the substrate W.

(8) Formation of Antireflection Film and Resist Film FIG. 6 is a diagram for explaining the operation of the hands H1 and H2 of the transport mechanism 127 of FIG. 4 when the substrate W is carried into the coating processing unit 129 of FIG. is there. In FIG. 6, a part of the configuration of the transport mechanism 127 and the coating processing unit 129 is shown in a top view. The operation of the hand H2 of the transport mechanism 127 is the same as the operation of the hand H1. Furthermore, the operations of the hands H1 and H2 of the transport mechanisms 128, 137, and 138 in FIG. 4 are the same as the operations of the hands H1 and H2 of the transport mechanism 127.

  In FIG. 6A, as indicated by the arrow, the substrate W held by the hand H1 is carried into the coating processing unit 129. The positional relationship between the hand H1 and the spin chuck 25 is set in advance. Next, as shown in FIG. 6B, the substrate W carried into the coating processing unit 129 is placed on the spin chuck 25 so that the center W1 of the substrate W coincides with the axis P1 of the spin chuck 25. Is done. Thereafter, as shown in FIG. 6C, the hand H <b> 1 is unloaded from the coating processing unit 129.

  In the coating processing unit 129 of the coating processing chambers 22 and 24 (FIG. 2), an antireflection liquid is applied on the main surface of the substrate W. In the coating processing unit 129 of the coating processing chambers 21 and 23 (FIG. 2), a resist solution is applied onto the antireflection film formed on the substrate W.

  7 and 8 are diagrams showing a procedure for forming the antireflection film and the resist film on the main surface of the substrate W and the removal range of each film.

  First, in the coating processing unit 129 of the coating processing chamber 22 (or the coating processing chamber 24), the antireflection liquid is applied onto the main surface of the substrate W while the substrate W is rotated, and the edge rinse nozzle 30 applies the substrate W to the substrate W. A rinse liquid is discharged toward the peripheral edge. Thereby, as shown in FIG. 7A, the antireflection liquid adhering to the peripheral edge of the substrate W is dissolved.

  In this way, the antireflection liquid in the annular region at the peripheral edge on the main surface of the substrate W is removed. Thereafter, a predetermined heat treatment is performed on the substrate W by the heat treatment portion 123, so that the antireflection film F1 is formed on the main surface of the substrate W excluding the peripheral portion as shown in FIG. 7B. The width between the end portion of the main surface of the substrate W and the outer peripheral portion of the antireflection film F1 is referred to as an edge cut width D1.

  Next, in the coating processing unit 129 of the coating processing chamber 21 (or the coating processing chamber 23), the resist solution is applied onto the main surface of the substrate W while the substrate W is rotated, and the edge rinse nozzle 30 applies the substrate W to the substrate W. A rinse liquid is discharged toward the peripheral edge. Thereby, as shown in FIG. 8A, the resist solution adhering to the peripheral portion of the substrate W is dissolved.

  In this way, the resist solution in the annular region at the peripheral edge of the substrate W is removed. Thereafter, a predetermined heat treatment is performed on the substrate W by the heat treatment portion 123, thereby forming a resist film F2 on the substrate W excluding the peripheral portion so as to cover the antireflection film F1 as shown in FIG. 8B. Is done. A width between the end portion of the main surface of the substrate W and the outer peripheral portion of the resist film F2 is referred to as an edge cut width D2.

  Here, the definition of the edge part of the board | substrate W is demonstrated, referring the following drawing. FIG. 9 is a schematic diagram for explaining an end portion of the substrate W. FIG. As shown in FIGS. 9A and 9B, the substrate W has end portions E on the main surface and the back surface, respectively. The main surface and the back surface of the substrate W are formed flat. The main surface of the substrate W is a surface on which substrate processing is performed, and the back surface of the substrate W is a surface opposite to the main surface. In this example, the main surface of the substrate W is a surface on which the antireflection film F1 and the resist film F2 are formed.

  As shown in FIG. 9A, the substrate W has an inclined surface that is inclined downward from the edge E of the main surface toward the outermost periphery OM, and at the end of the back surface. It has an inclined surface that inclines upward from E toward the outermost peripheral part OM. These inclined surfaces are generally referred to as bevel portions B. Alternatively, as illustrated in FIG. 9B, the substrate W has a curved surface that curves from the end E of the main surface toward the end E of the back surface via the outermost peripheral portion OM. This curved surface is generally called a bevel portion B. In addition, a region from the end E of the main surface of the substrate W to a predetermined distance d inward is generally referred to as a peripheral edge P. The distance d is, for example, 2 to 3 mm.

  FIG. 10 is a plan view of the substrate W on which the antireflection film F1 and the resist film F2 are formed. In the coating processing unit 129 (FIG. 6), the substrate W is placed on the spin chuck 25 so that the center W1 of the substrate W coincides with the axis P1 of the spin chuck 25 (FIG. 6). In this state, when the flow rate of the rinse liquid discharged from the edge rinse nozzle 30 to the substrate W and the discharge position of the rinse liquid are appropriate, as shown in FIG. Thus, the antireflection film F1 and the resist film F2 are formed so that the edge cut widths D1 and D2 have uniform set values.

  On the other hand, in the coating processing unit 129, when the substrate W is placed on the spin chuck 25 so that the center W1 of the substrate W is eccentric with respect to the axis P1 of the spin chuck 25, as shown in FIG. An antireflection film F1 and a resist film F2 are formed on the substrate W so that the cut widths D1 and D2 are not uniform.

  Further, when the flow rate of the rinsing liquid discharged from the edge rinsing nozzle 30 to the substrate W is smaller than an appropriate value, the rinsing liquid penetrates to the inside of the set position, and as shown by the dotted line in FIG. The resist film F2 is formed so that the cut width D2 is larger than the set value. When the flow rate of the rinsing liquid discharged from the edge rinsing nozzle 30 to the substrate W is larger than an appropriate value, the liquid width of the rinsing liquid becomes narrow, so that the edge cut width as shown by the one-dot chain line in FIG. The resist film F2 is formed so that D2 is smaller than the set value. In FIG. 10C, the antireflection film F1 and the edge cut width D1 are not shown. In the above case, the edge cut width D1 is also different from the set value.

  Furthermore, even when the rinse liquid discharge position from the edge rinse nozzle 30 to the substrate W is not appropriate, the antireflection film F1 and the resist film F2 are formed so that the edge cut widths D1 and D2 are different from the set values.

  As described above, by detecting the edge cut widths D1 and D2 of the substrate W, whether or not the eccentric amount of the substrate W in the coating processing unit 129 is equal to or less than the allowable upper limit, and the flow rate and discharge position of the edge rinse liquid are determined. It can be determined whether or not it is appropriate.

(9) Details of Edge Exposure Unit Next, details of the edge exposure unit EEW will be described. FIG. 11 is a diagram schematically illustrating one side surface of the edge exposure unit EEW. FIG. 12 is a diagram schematically illustrating another side surface of the edge exposure unit EEW. As shown in FIGS. 11 and 12, the edge exposure unit EEW includes a light projecting unit 510, a light projecting unit holding unit 520, a substrate rotating unit 540, and a state detection processing unit 580.

  The light projecting unit 510 is connected to an exposure light source (not shown) through a light guide made of an optical fiber cable or the like. Accordingly, the light projecting unit 510 irradiates the peripheral portion P of the substrate W with light transmitted from the exposure light source via the light guide. Hereinafter, the light irradiated onto the substrate W by the light projecting unit 510 in order to expose the resist film on the substrate W will be referred to as exposure light.

  The light projecting unit holding unit 520 includes an X direction driving motor 521, an X direction ball screw 522, a light projecting unit holding guide 523, a column 524, a Y direction driving motor 531, a column holding guide 532, and a Y direction ball screw 533.

  The light projecting unit holding guide 523 holds the light projecting unit 510 so as to be movable in the X direction. Further, the X direction ball screw 522 is screwed into a connecting portion (not shown) provided in the light projecting portion 510.

  The X direction ball screw 522 is provided so as to extend in the X direction, and rotates in the direction of the arrow R <b> 1 in accordance with the operation of the X direction drive motor 521. As the X direction ball screw 522 rotates, the light projecting unit 510 moves in the X direction.

  The X-direction drive motor 521 and the light projecting unit holding guide 523 are supported at a predetermined height by the support column 524. The lower end of the column 524 is held by a column holding guide 532. The support holding guide 532 holds the support 524 so as to be movable in the Y direction. Further, the Y-direction ball screw 533 is screwed into a connecting portion (not shown) provided on the support column 524.

  The Y direction ball screw 533 is provided so as to extend in the Y direction, and rotates in the direction of the arrow R <b> 3 in accordance with the operation of the Y direction drive motor 531. As the Y direction ball screw 533 rotates, the support column 524 moves in the Y direction.

  In this way, the light projecting unit 510 moves in the X direction and the Y direction by the operation of each unit of the light projecting unit holding unit 520.

  The substrate rotation unit 540 includes a substrate rotation motor 541, a substrate rotation shaft 542, and a spin chuck 543. The substrate rotation shaft 542 protrudes upward from the substrate rotation motor 541. The spin chuck 543 is connected to the upper end of the substrate rotation shaft 542. During the edge exposure process, the substrate W is placed on the spin chuck 543. The spin chuck 543 sucks and holds the placed substrate W.

  The substrate rotation motor 541 rotates the substrate rotation shaft 542 in the direction of the arrow R2. As a result, the spin chuck 543 rotates, and the substrate W attracted and held by the spin chuck 543 rotates.

  FIG. 13 is a schematic side view of the state detection processing unit 580. FIG. 14 is a schematic plan view of the state detection processing unit 580.

  As shown in FIGS. 13 and 14, the state detection processing unit 580 includes an illumination unit 581, a reflection mirror 582, and a CCD (charge coupled device) line sensor 583. The illumination unit 581 includes, for example, an LED (light emitting diode) light source. The state detection processing unit 580 is connected to a state detection controller MC of FIG.

  The illumination unit 581 is disposed above the peripheral portion P and the bevel portion B of the substrate W in FIG. 13 along the Y direction. The reflection mirror 582 is disposed above the substrate W so as to face the illumination unit 581. A CCD line sensor 583 is disposed above the reflection mirror 582. The CCD line sensor 583 is arranged so that the pixel arrangement direction is along the Y direction.

  Band-shaped light (hereinafter referred to as illumination light) for detecting the state of the main surface of the substrate W is generated from the illumination unit 581. The illumination light is applied to the peripheral portion P and the bevel portion B of the substrate W. The illumination light applied to the peripheral portion P of the substrate W is reflected on the substrate W, further reflected on the reflection mirror 582, and enters the CCD line sensor 583. The received light amount distribution of the CCD line sensor 583 corresponds to the brightness distribution of the reflected light incident on the CCD line sensor 583 among the reflected light on the main surface of the substrate W. Hereinafter, the brightness distribution of the reflected light incident on the CCD line sensor 583 is abbreviated as the brightness distribution of the reflected light.

  Here, the brightness distribution of the reflected light differs depending on the state of the main surface of the substrate W. Specifically, as shown in FIG. 13, when the antireflection film F1 and the resist film F2 are formed on the substrate W, the main surface of the substrate W according to the formation region of the antireflection film F1 and the resist film F2. The brightness distribution of the reflected light at is different.

  On the other hand, the bevel portion B of the substrate W is inclined or curved with respect to the peripheral portion P. Therefore, the illumination light applied to the bevel portion B of the substrate W is reflected laterally on the substrate W and hardly enters the CCD line sensor 583. Therefore, in the received light amount distribution of the CCD line sensor 583, the received light amount based on the reflected light at the bevel portion B of the substrate W is smaller than the received light amount based on the reflected light at the peripheral portion P of the substrate W. In the present embodiment, based on the received light amount distribution of the CCD line sensor 583, a process for determining the position of the end E of the main surface of the substrate W and a state detection process for the peripheral edge P of the substrate W, which will be described later, are performed.

(10) Determination processing of the position of the end portion of the main surface of the substrate While the substrate W is rotated by a predetermined angle, the illumination light is irradiated to the region including the peripheral edge portion P and the bevel portion B of the substrate W, The received light amount distribution of the CCD line sensor 583 is continuously given to the main controller 114. The substrate W may be rotated once, or may be rotated by an angle less than one rotation (for example, 90 degrees).

  Based on the received light amount distribution of the CCD line sensor 583, the main controller 114 creates peripheral image data indicating the brightness distribution of the reflected light in the region including the peripheral portion P and the bevel portion B of the substrate W. The value (tone value) of the peripheral edge image data corresponds to the amount of light received by the CCD line sensor 583.

  FIG. 15 is a diagram for explaining a method of creating peripheral edge image data. FIGS. 15A, 15B, and 15C sequentially show the illumination light irradiation states on the substrate W. FIGS. 15D, 15E, and 15F show FIGS. ), (B), and (c), the peripheral edge images created are shown respectively. In FIGS. 15A to 15C, the region on the substrate W irradiated with the illumination light is hatched. 15D to 15F, the peripheral edge image data is displayed in the form of an image based on the peripheral edge image data in order to facilitate understanding. Hereinafter, an image based on the peripheral image data is referred to as a peripheral image.

  As shown in FIGS. 15A to 15C, the substrate W rotates while the illumination light is continuously applied to the region T1 including the peripheral portion P and the bevel portion B on the substrate W. Thereby, illumination light is continuously irradiated in the circumferential direction of the substrate W. When the substrate W rotates once, the illumination light is irradiated to the entire annular region T1 including the peripheral edge portion P and the bevel portion B of the substrate W. Based on the received light amount distribution of the CCD line sensor 583 obtained continuously during the period in which the substrate W is rotated by a predetermined angle, the rectangular peripheral edge image data d1 is obtained as shown in FIGS. Created.

  The vertical position of the peripheral image data d1 corresponds to the position of each pixel of the CCD line sensor 583 (the radial position of the substrate W), and the horizontal position of the peripheral image data d1 is the rotation of the substrate W. Corresponds to the angle. Accordingly, the vertical change in the peripheral edge image data d1 represents the brightness distribution of the reflected light in the radial direction of the substrate W in the region T1 including the peripheral edge P and the bevel portion B of the substrate W. The change in the lateral direction of the peripheral edge image data d1 represents the distribution of the brightness of the reflected light in the region T1 of the peripheral edge P of the substrate W in the peripheral direction of the substrate W.

  Note that the transmittance of the antireflection film F1 and the transmittance of the resist film F2 are different. Therefore, as described above, the brightness distribution of the reflected light between the portion of the substrate W on which only the resist film F2 is formed and the portion of the substrate W on which the antireflection film F1 and the resist film F2 are overlaid is Different. As a result, it is possible to distinguish between the portion of the substrate W on which only the resist film F2 is formed and the portion of the substrate W on which the antireflection film F1 and the resist film F2 are overlaid.

  When the substrate W is rotated by a predetermined angle, the brightness distribution of the reflected light in the region T1 including the peripheral portion P and the bevel portion B of the substrate W is obtained as one rectangular peripheral portion image data d1. Based on the peripheral edge image data d1, the peripheral edge image of the region T1 including the peripheral edge P and the bevel portion B of the substrate W is displayed.

  FIG. 16 is a diagram illustrating a change in the peripheral edge image of the substrate W and the gradation value of the peripheral edge image. 16A shows a peripheral image of one substrate W, and FIG. 16B shows a peripheral image of another substrate W. 16A and 16B, the horizontal axis indicates the pixel position in the radial direction of the substrate W, and the vertical axis indicates the pixel position in the circumferential direction of the substrate W. The gradation value of the peripheral edge image corresponds to the amount of light received by the CCD line sensor 583.

  In the peripheral edge images in FIGS. 16A and 16B, a pattern is not applied to a region having a high gradation value (bright region), and a hatching pattern is provided to a region having a low gradation value (dark region). A dot pattern is attached to an area having an intermediate gradation value (an area having an intermediate brightness). A region having a high gradation value corresponds to the peripheral portion P of the substrate W, a region having an intermediate gradation value corresponds to the bevel portion B of the substrate W, and a region having a low gradation value is located outside the substrate W. Correspond.

  FIG. 16C shows a change in the gradation value of the peripheral edge image in the radial direction of the substrate W in FIG. FIG. 16D shows a change in the gradation value of the peripheral edge image in the radial direction of the substrate W in FIG. 16C and 16D, the horizontal axis indicates the pixel position in the radial direction of the substrate W, and the vertical axis indicates the gradation value of the peripheral edge image.

  Based on the peripheral edge image data d1, gradation values for each pixel are sequentially acquired in the direction from the outside of the substrate W to the center of the substrate W in the peripheral edge image. The gradation value of each pixel is compared with a representative value (for example, average value) og of gradation values of a certain number of pixels acquired immediately before. When the gradation value of the pixel has a specific relationship with the representative value og of the gradation values of a certain number of pixels acquired immediately before, the position of the substrate W corresponding to the pixel is the provisional end position BP. As determined. In this example, the position of the substrate W corresponding to the pixel having the gradation value bg larger than the representative value og by a certain ratio or by a certain amount is determined as the provisional edge position BP.

  The bevel portion B does not appear in the peripheral edge image in FIG. In this case, the temporary end position BP can be regarded as the position of the end E of the main surface of the substrate W as shown in FIG. Thereby, the edge cut widths D1 and D2 can be accurately calculated based on the distance from the provisional end position BP of the substrate W set in the peripheral edge image.

  On the other hand, a bevel portion B appears in the peripheral edge image of FIG. In this case, the temporary end position BP cannot be regarded as the position of the end E of the main surface of the substrate W as shown in FIG. Further, there are individual differences in the shape of the surface of the bevel portion B of the substrate W and the state of the surface (for example, the presence or absence of deposits). Therefore, in the procedure for determining the provisional end position BP, when the bevel portion B appears in the peripheral edge image, the position of the end E of the main surface of the substrate W can be determined based on the provisional end position BP. Can not. Therefore, in the present embodiment, the end E of the main surface of the substrate W is determined by the following procedure.

  FIG. 17 is a diagram for explaining a procedure for determining the position of the end E of the main surface of the substrate W. FIG. 18 is a flowchart showing a process of determining the position of the end E of the main surface of the substrate W by the main controller 114 of FIG. FIG. 17A shows a peripheral image of one substrate W, and FIG. 17B shows a peripheral image of another substrate W. 17A and 17B, the horizontal axis indicates the pixel position in the radial direction of the substrate W, and the vertical axis indicates the pixel position in the circumferential direction of the substrate W.

  In the peripheral images in FIGS. 17A and 17B, a pattern is not added to a region having a high gradation value, and a hatching pattern is attached to a region having a low gradation value, so that an intermediate gradation value is obtained. A dot pattern is attached to the area having. A region having a high gradation value corresponds to the peripheral portion P of the substrate W, a region having an intermediate gradation value corresponds to the bevel portion B of the substrate W, and a region having a low gradation value is located outside the substrate W. Correspond. The bevel portion B appears in the peripheral image in FIG. 17B, and the peripheral image does not appear in the peripheral image in FIG.

  FIG. 17C shows a change in the gradation value of the peripheral edge image in the radial direction of the substrate W in FIG. FIG. 17D shows a change in the gradation value of the peripheral edge image in the radial direction of the substrate W in FIG. 17C and 17D, the horizontal axis indicates the pixel position in the radial direction of the substrate W, and the vertical axis indicates the gradation value of the peripheral edge image.

  The main controller 114 determines the provisional end position BP in the peripheral edge image by the method shown in FIG. 16 (step S1). Next, the main controller 114 determines the position in the peripheral edge where the antireflection film F1 and the resist film F2 are not formed on the main surface of the substrate W as a reference position (step S2). In this case, the main controller 114 determines, as the reference position SP, a position that is a certain number of pixels from the determined provisional end position BP.

  Next, the main controller 114 acquires the gradation value of the pixel at the determined reference position SP as the reference gradation value sg (step S3). In this example, the main controller 114 extends a certain length in the circumferential direction of the substrate W (for example, a length corresponding to ¼ rotation of the substrate W), as shown in FIGS. A representative value (for example, an average value) of gradation values of a plurality of pixels in the belt-like region R including the reference position SP is acquired as the reference gradation value sg.

  Subsequently, the main controller 114 sequentially acquires the gradation value of each pixel as the current gradation value in the direction from the reference position SP in the peripheral edge image toward the outside of the substrate W. First, a gradation value of a pixel adjacent to the outside of one pixel (hereinafter referred to as a target pixel) is acquired as a target gradation value (step S4). Here, the first pixel is the pixel at the reference position SP. Next, the main controller 114 calculates the difference between the reference gradation value sg and the target gradation value (step S5).

  Here, the main controller 114 determines whether or not the calculated difference has reached a predetermined ratio ΔG (for example, 20%) of the reference gradation value sg (step S6). That is, the main controller 114 determines whether or not the target gradation value has decreased from the reference gradation value by a predetermined ratio ΔG. In step S6, when the calculated difference does not reach the predetermined ratio ΔG, the main controller 114 returns to the process of step S4 and acquires the gradation value of the next target pixel as the target gradation value.

  The main controller 114 repeats the processes of steps S4 to S6 until the current gradation value decreases from the reference gradation value by a predetermined ratio ΔG. Thereby, the target pixel sequentially moves in a direction from the reference position SP toward the outside of the substrate W.

  In step S6, when the calculated difference reaches a predetermined ratio ΔG, that is, when the target gradation value reaches the gradation value eg of FIGS. As shown in c) and (d), the position of the target pixel is determined as the main end position EP (step S7). The position of the substrate W corresponding to the main end position EP is the position of the end E of the main surface of the substrate W. Thereby, the determination process of the position of the end E of the main surface of the substrate W is completed. According to this process, the position of the end portion E of the main surface of the substrate W can be accurately determined regardless of whether or not the bevel portion B appears in the peripheral edge image.

  In step S6, instead of determining whether the calculated difference has reached a predetermined ratio ΔG, it may be determined whether the calculated difference has reached a predetermined amount. As described above, when the gradation value of the target pixel has a specific relationship with the reference gradation value sg, the position of the substrate W corresponding to the target pixel is determined as the position of the end E of the main surface of the substrate W. Is done. For example, the position of the substrate W corresponding to the pixel having the gradation value eg smaller by a certain ratio or by a certain amount with respect to the reference gradation value sg is determined as the position of the end E of the main surface of the substrate W.

(11) Configuration of Control System of Substrate Processing Apparatus FIG. 19 is a block diagram showing the configuration of the control system of the substrate processing apparatus 100. As shown in FIG. 19, the host computer 80 is connected to the main controller 114. A main panel PN and an operation unit 90 are connected to the main controller 114. The main controller 114 is connected to local controllers LC1 and LC2 and a state detection controller MC. Operation information of the operation unit 90 by the user is given to the main controller 114.

  The local controller LC1 includes a heat treatment control unit C11, a transfer control unit C12, and a coating process control unit C13. The heat treatment control unit C11 controls the temperatures of the heat treatment unit PHP, the adhesion reinforcement processing unit PAHP, and the cooling unit CP in the heat treatment unit 123 of FIG. The transport control unit C12 controls operations of the transport mechanisms 127 and 128 of the transport unit 122 in FIG.

  The application processing control unit C13 controls the operation of the nozzle transport mechanism 29 (FIG. 1) of the application processing unit 121 in FIG. 2, the operation of the spin chuck 25, and the supply of the processing liquid to each processing liquid nozzle 28. Further, the coating process control unit C13 controls the rinsing liquid supply system 30b in FIG. 5 to control the supply of the rinsing liquid to the edge rinsing nozzle 30 and the rinsing discharged from the edge rinsing nozzle 30 to the substrate W. Adjust the liquid flow rate. Further, the application processing control unit C13 controls the movement of the edge rinse nozzle 30 by controlling the edge rinse nozzle drive unit 30a in FIG. 5 and determines the discharge position of the rinse liquid from the edge rinse nozzle 30 to the substrate W. Control.

  The local controller LC2 includes a heat treatment control unit C21, a conveyance control unit C22, a development processing control unit C23, and an edge exposure control unit C24. The heat treatment control unit C21 controls the temperatures of the heat treatment unit PHP and the cooling unit CP in the heat treatment unit 133 of FIG. The transport control unit C22 controls operations of the transport mechanisms 137 and 138 of the transport unit 132 in FIG.

  The development processing control unit C23 controls the operation of the moving mechanism 39 of the development processing unit 131, the operation of the spin chuck 35, and the supply of the developer to each development nozzle 38 in FIG. The edge exposure controller C24 operates the X direction drive motor 521 (FIG. 11), the Y direction drive motor 531 (FIG. 11), the substrate rotation motor 541 (FIG. 11), and an exposure light source (not shown). To control the operation.

  The state detection controller MC includes an illumination control unit C31 and a CCD line sensor control unit C32. The illumination control unit C31 controls the operation of the illumination unit 581 in FIG. The CCD line sensor control unit C32 controls the operation of the CCD line sensor 583 in FIG.

(12) State detection processing of peripheral edge of substrate The state detection processing of the peripheral edge P of the substrate W will be described. In the state detection process, the received light amount distribution of the CCD line sensor 583 is given to the main controller 114 via the state detection controller MC. Based on the received light amount distribution of the CCD line sensor 583, the state of the peripheral edge portion P of the substrate W (edge cut widths D1, D2 from the main end position EP) is inspected.

  FIG. 20 is a diagram illustrating the brightness distribution of the peripheral edge image displayed based on the peripheral edge image data d1. In the example of FIG. 20A, the edge cut widths D1, D2 from the main end position EP over the entire peripheral edge portion P of the substrate W are substantially constant and within the allowable range. In this case, it is determined that the eccentric amount of the substrate W on the spin chuck 25 is equal to or less than the allowable upper limit value, and the flow rate of the rinse liquid discharged from the edge rinse nozzle 30 to the substrate W and the discharge position of the rinse liquid are appropriate. The

  In the example of FIG. 20B, the average value of the edge cut widths D1, D2 from the main end position EP over the entire peripheral edge P of the substrate W is within the allowable range, but the edge cut widths D1, D2 Has changed significantly. In this case, the flow rate of the rinse liquid discharged from the edge rinse nozzle 30 to the substrate W and the discharge position of the rinse liquid were appropriate, but it was determined that the eccentric amount of the substrate W on the spin chuck 25 exceeded the allowable upper limit value. Is done.

  In the example of FIG. 20C, the edge cut widths D1, D2 from the main end position EP over the entire peripheral edge portion P of the substrate W are substantially constant, but are smaller than the lower limit value of the allowable range. In this case, the eccentric amount of the substrate W on the spin chuck 25 is equal to or less than the allowable upper limit value, but it is determined that the flow rate of the rinse liquid discharged from the edge rinse nozzle 30 to the substrate W or the discharge position of the rinse liquid is not appropriate. The

  In the example of FIG. 20D, the edge cut widths D1 and D2 from the main end position EP change greatly over the entire peripheral edge portion P of the substrate W, and the average value of the edge cut widths D1 and D2 is allowable. Less than the lower limit of the range. In this case, it is determined that the eccentric amount of the substrate W on the spin chuck 25 exceeds the allowable upper limit value, and the flow rate of the rinse liquid discharged from the edge rinse nozzle 30 to the substrate W or the discharge position of the rinse liquid is not appropriate. .

  21 and 22 are flowcharts showing the state detection process of the peripheral edge portion P of the substrate W by the main controller 114 of FIG. In the following description, the state detection processing of the peripheral portion P of the substrate for the edge cut width D1 will be described. However, the state detection processing of the peripheral portion P of the substrate for the edge cut width D2 is also the peripheral edge of the substrate for the edge cut width D1. This is the same as the state detection process of the part P.

  First, the main controller 114 controls the transport mechanism 137 in FIG. 4 through the local controller LC2 and the transport control unit C22 to place the substrate W on the spin chuck 543 of the edge exposure unit EEW in FIG. Further, the main controller 114 controls the spin chuck 543 of FIG. 11 through the local controller LC2 and the edge exposure control unit C24, thereby attracting and holding the substrate W on the spin chuck 543 (step S11).

  Next, the main controller 114 controls the spin chuck 543 through the local controller LC2 and the edge exposure control unit C24, thereby rotating the substrate W held on the spin chuck 543 by a predetermined angle (step S12). During the period in which the substrate W rotates, the main controller 114 creates the peripheral edge image data d1 based on the received light amount distribution of the CCD line sensor 583 in FIG. 11 (step S13).

  Next, the main controller 114 transmits the created peripheral edge image data d1 to the host computer 80 in FIG. 19 (step S14). The host computer 80 stores the peripheral edge image data d1 from the main controller 114. The user can check the peripheral edge image data d1 as necessary using the host computer 80 or a terminal device connected to the host computer 80.

  The main controller 114 may store the peripheral edge image data d1. In that case, the peripheral image data d1 can be confirmed by the user on the main panel PN of FIG. 1 as necessary. Further, the peripheral edge image data d1 can be transmitted from the main controller 114 to the host computer 80 at an arbitrary timing.

  Next, the main controller 114 executes a process for determining the position of the end portion E of the main surface of the substrate W in FIG. 18 (step S15). Subsequently, the main controller 114 calculates an average value of the edge cut width D1 based on the main end position EP and the created peripheral edge image data d1 (step S16). Further, the main controller 114 calculates the difference between the maximum value and the minimum value of the edge cut width D1 based on the main end position EP and the created peripheral edge image data d1 (step S17). The difference between the maximum value and the minimum value of the edge cut width D1 corresponds to the variation (change amount) of the edge cut width D1.

  Next, the main controller 114 determines whether or not the average value of the edge cut width D1 calculated in step S16 of the substrate W is within a preset allowable range (step S18). When the average value of the edge cut width D1 is within the allowable range, the main controller 114 sets the flow rate of the rinse liquid discharged to the substrate W from the edge rinse nozzle 30 in the coating process chamber 22 (or the coating process chamber 24) in FIG. And it determines with the discharge position of the rinse liquid being appropriate.

  Further, the main controller 114 determines whether or not the difference between the edge cut widths D1 calculated in step S17 is equal to or less than a preset threshold value (step S19). When the difference in the edge cut width D1 is equal to or smaller than the threshold, the main controller 114 determines that the eccentric amount of the substrate W on the spin chuck 25 is equal to or less than the allowable upper limit value in the coating processing chamber 22 (or coating processing chamber 24) in FIG. It is determined that The peripheral edge image based on the peripheral edge image data d1 of the substrate W at this time is as shown in FIG. Thereafter, the main controller 114 ends the state detection process of the peripheral edge portion P of the substrate W.

  If the difference in the edge cut width D1 exceeds the threshold value in step S19, the main controller 114 determines that the eccentric amount of the substrate W on the spin chuck 25 is the allowable upper limit value in the coating processing chamber 22 (or coating processing chamber 24). Is determined to have exceeded The peripheral edge image based on the peripheral edge image data d1 of the substrate W at this time is as shown in FIG.

  In this case, the main controller 114 transfers the transport mechanism 127 (or the local controller LC1 and the transport controller C12 through the local controller LC12) so that the amount of eccentricity of the substrate W on the spin chuck 25 in the coating processing chamber 22 (or coating processing chamber 24) becomes small. The operation of the transport mechanism 128) is corrected (step S20). Thereafter, the main controller 114 ends the state detection process of the peripheral edge portion P of the substrate W.

  In step S18, when the average value of the edge cut width D1 is outside the allowable range, the main controller 114 rinses the substrate W from the edge rinse nozzle 30 in the coating processing chamber 22 (or the coating processing chamber 24) in FIG. It is determined that the flow rate or the rinse liquid discharge position is not appropriate.

  In this case, the main controller 114 determines whether or not the difference between the edge cut widths D1 calculated in step S17 is equal to or less than a threshold value (step S21). When the difference in the edge cut width D1 is equal to or smaller than the threshold, the main controller 114 determines that the eccentric amount of the substrate W on the spin chuck 25 is equal to or less than the allowable upper limit value in the coating processing chamber 22 (or coating processing chamber 24) in FIG. It is determined that The peripheral edge image based on the peripheral edge image data d1 of the substrate W at this time is as shown in FIG.

  Thereafter, the main controller 114 determines whether or not the flow rate of the rinse liquid measured by the flow rate sensor in the rinse liquid supply system 30b of FIG. 5 is equal to the set value (step S22). If the flow rate of the rinsing liquid is different from the set value, the main controller 114 outputs an alarm (step S23). As an output of the alarm, for example, an alarm sound is generated by a buzzer or the like, or an alarm display by a lamp or the like is performed. Thereafter, the main controller 114 ends the state detection process of the peripheral edge portion P of the substrate W.

  In step S22, when the flow rate of the rinse liquid is equal to the set value, the main controller 114 determines that the discharge position of the rinse liquid from the edge rinse nozzle 30 is not appropriate. In this case, the main controller 114 adjusts the discharge position of the rinse liquid from the edge rinse nozzle 30 by controlling the edge rinse nozzle drive unit 30a of FIG. 5 through the local controller LC1 and the coating process control unit C13 (step S24). ).

  For example, when the average value of the edge cut width D1 calculated in step S16 is smaller than the lower limit value of the allowable range, the main controller 114 moves the edge rinse nozzle 30 by a certain amount in the direction approaching the center of the substrate W. . Conversely, when the average value of the edge cut width D1 calculated in step S16 is larger than the upper limit value of the allowable range, the main controller 114 moves the edge rinse nozzle 30 by a certain amount in the direction away from the center of the substrate W. Let Thereafter, the main controller 114 ends the state detection process of the peripheral edge portion P of the substrate W.

  If the difference in the edge cut width D1 exceeds the threshold value in step S21, the main controller 114 determines that the eccentric amount of the substrate W on the spin chuck 25 is the allowable upper limit value in the coating processing chamber 22 (or coating processing chamber 24). Is determined to have exceeded The peripheral edge image based on the peripheral edge image data d1 of the substrate W at this time is as shown in FIG. In this case, the main controller 114 transfers the transport mechanism 127 (or the local controller LC1 and the transport controller C12 through the local controller LC12) so that the amount of eccentricity of the substrate W on the spin chuck 25 in the coating processing chamber 22 (or coating processing chamber 24) becomes small. The operation of the transport mechanism 128) is corrected (step S25).

  Thereafter, the main controller 114 determines whether or not the flow rate of the rinse liquid measured by the flow rate sensor in the rinse liquid supply system 30b of FIG. 5 is equal to the set value (step S26). If the flow rate of the rinse liquid is different from the set value, the main controller 114 outputs an alarm (step S27). Thereafter, the main controller 114 ends the state detection process of the peripheral edge portion P of the substrate W.

  In step S26, when the flow rate of the rinsing liquid is equal to the set value, the main controller 114 controls the edge rinse nozzle drive unit 30a in FIG. 5 through the local controller LC1 and the coating process control unit C13, thereby removing the edge rinse nozzle 30 from the edge rinse nozzle 30. The rinsing liquid discharge position is adjusted (step S28). Thereafter, the main controller 114 ends the state detection process of the peripheral edge portion P of the substrate W.

(13) Effect In the substrate processing apparatus 100 according to the present embodiment, on the main surface of the substrate W except for the peripheral portions of the predetermined width on the main surface of the substrate W inside the outermost peripheral portion OM of the substrate W. An antireflection film F1 and a resist film F2 are formed. Light is applied to the at least part of the antireflection film F1 and the resist film F2 and the peripheral edge of the main surface of the substrate W by the illumination unit 581, and reflected light from the substrate W is received by the CCD line sensor 583. Further, peripheral edge image data d1 corresponding to the amount of light received by the CCD line sensor 583 is acquired.

  Here, the main surface of the substrate W is flat, and the antireflection film F1 and the resist film F2 are not formed on the peripheral edge of the main surface. Therefore, the amount of light received based on the reflected light from the peripheral edge is substantially constant. On the other hand, the bevel portion B between the end E of the main surface of the substrate W and the outermost peripheral portion OM of the substrate W is inclined or curved with respect to the main surface of the substrate W.

  Therefore, the amount of received light based on the reflected light from the bevel portion B is different from the amount of received light based on the reflected light from the peripheral portion. As a result, the amount of light received based on the reflected light from the substrate W changes with the end E of the main surface of the substrate W as a boundary. Therefore, the main surface of the substrate W is changed based on the change in the value (gradation value) of the peripheral edge image data d1 in the direction from the reference position SP in the peripheral edge on the main surface of the substrate W toward the outermost peripheral portion OM of the substrate W. The position of the end E can be determined.

  In this case, the position where the value (tone value) of the peripheral edge image data d1 changes is not affected by the surface shape and the surface state of the bevel portion B. Therefore, even when there are individual differences in the shape and surface state of the surface of the bevel portion B of the substrate W, the position of the end portion E of the main surface of the substrate W can be accurately determined. As a result, the edge cut widths D1 and D2 on the main surface of the substrate W can be accurately measured.

(14) Other Embodiments In the above embodiment, a position that is a certain number of pixels from the provisional end position BP is determined as the reference position SP, but the present invention is not limited to this. The reference position SP may be determined by other methods. For example, a position at a predetermined distance from the center of the substrate W may be determined as the reference position SP. In this case, the reference position SP can be easily determined based on the size of the substrate W. Further, since the reference position SP can be determined without determining the provisional end position BP, the process of step S1 in FIG. 18 may be omitted.

  Further, the reference position SP may be determined based on a change in the gradation value of the peripheral edge image. For example, a gradation value corresponding to the amount of light received by the CCD line sensor 583 based on reflected light from a plurality of positions on the substrate W is acquired, and the acquired gradation value is larger than a predetermined threshold value. The position of W may be determined as the reference position SP. Even in this case, since the reference position SP can be determined without determining the provisional end position BP, the process of step S1 in FIG. 18 may be omitted.

  Alternatively, the gradation value is acquired for each pixel in the direction from the temporary end position BP toward the center of the substrate W, and the average value of the gradation values of a certain number of continuous pixels is calculated. An average value of a certain number of pixels is sequentially calculated while a certain number of pixels are moved. If the difference between the average value of the fixed number of pixels calculated this time and the average value of the fixed number of pixels calculated last time is smaller than a predetermined threshold value, A position within the range may be determined as the reference position SP.

  Alternatively, the gradation value may be acquired for each pixel in the direction from the temporary end position BP toward the center of the substrate W, and the position of the pixel having the maximum gradation value may be determined as the reference position SP.

(15) Correspondence between each constituent element of claim and each element of the embodiment Hereinafter, an example of correspondence between each constituent element of the claim and each element of the embodiment will be described. It is not limited to.

  In the above embodiment, the substrate W is an example of the substrate, the substrate processing apparatus 100 is an example of the substrate processing apparatus, the outermost peripheral part OM is an example of the outermost peripheral part, and the peripheral part P is an example of the peripheral part. The antireflection film F1 or the resist film F2 is an example of the film of the processing liquid. The first processing block 12 is an example of a film forming unit, the state detection processing unit 580 is an example of a received light amount detection unit, the peripheral edge image data d1 is an example of received light data, and the reference position SP is a reference position. It is an example and the edge part E is an example of an edge part. The main controller 114 is an example of a position determination unit, the reference gradation value sg is an example of a first value, the gradation value eg is an example of a second value, and the representative value og is a third value. It is an example, and the gradation value bg is an example of the fourth value.

As each constituent element in the claims, various other elements having configurations or functions described in the claims can be used.
(16) Reference form
(1) A substrate processing apparatus according to a first reference embodiment is a substrate processing apparatus that performs processing on a substrate having at least a part of a circular outer periphery and a flat main surface. A film forming unit for forming a film of a processing solution on the main surface of the substrate except for a peripheral portion of a predetermined width on the main surface of the substrate on the inside, and light on at least a part of the film on the main surface of the substrate and the peripheral portion The received light amount detection unit that receives the reflected light from the substrate and the received light amount data corresponding to the received light amount of the received light amount detection unit. And a position determining unit that determines the position of the end portion of the main surface of the substrate based on the change in the received light data in the first direction toward the outer peripheral portion.
In this substrate processing apparatus, a film of the processing liquid is formed on the main surface of the substrate except for a peripheral portion having a predetermined width on the main surface of the substrate inside the outermost peripheral portion of the substrate. Light is irradiated to at least a part of the film on the main surface of the substrate and the peripheral portion, and reflected light from the substrate is received. Further, the received light data corresponding to the received light amount of the received light amount detection unit is acquired.
Here, the main surface of the substrate is flat and no film is formed on the periphery of the main surface. Therefore, the amount of light received based on the reflected light from the peripheral edge is substantially constant. On the other hand, the bevel portion between the end portion of the main surface of the substrate and the outermost peripheral portion of the substrate is inclined or curved with respect to the main surface of the substrate. Therefore, the amount of light received based on the reflected light from the bevel portion is different from the amount of light received based on the reflected light from the peripheral portion. Thereby, the amount of light received based on the reflected light from the substrate changes with the end of the main surface of the substrate as a boundary. Therefore, the position of the end portion of the main surface of the substrate can be determined based on the change in the received light data in the first direction from the reference position in the peripheral portion on the main surface of the substrate toward the outermost peripheral portion of the substrate.
In this case, the position where the light reception data changes is not affected by the surface shape and surface state of the bevel portion. Therefore, even when there are individual differences in the surface shape and surface state of the bevel portion of the substrate, the position of the end portion of the main surface of the substrate can be accurately determined. As a result, it becomes possible to accurately measure the width of the peripheral edge between the end of the film on the main surface of the substrate and the end of the main surface of the substrate.
(2) The position determination unit acquires the value of the received light data corresponding to the reference position as the first value, and then sets the value of the received light data having the first relationship with respect to the acquired first value to the second value. The position of the substrate corresponding to the acquired second value may be determined as the position of the end portion of the main surface of the substrate.
In this case, the position of the substrate corresponding to the second value having the first relationship with respect to the first value corresponding to the reference position is determined as the position of the end portion of the main surface of the substrate. Thereby, the position of the edge part of the main surface of a board | substrate can be determined more correctly.
(3) The first relationship may include that the second value is smaller than the first value by a certain rate or by a certain amount. In this case, the position of the end portion of the main surface of the substrate can be determined accurately and easily.
(4) The position determining unit may determine the reference position based on a change in received light data in a second direction from the outside of the substrate toward the center of the substrate.
In this case, the reference position is easily determined based on the change in the received light data. Thereby, the position of the edge part of the main surface of a board | substrate can be determined correctly and easily.
(5) The position determination unit obtains the value of the received light data corresponding to the outside of the substrate as the third value, and then sets the value of the received light data having the second relationship with respect to the acquired third value to the fourth value. And a position that is a predetermined distance away from the substrate position corresponding to the acquired fourth value in the second direction may be determined as the reference position.
In this case, a position that is a predetermined distance away from the position of the substrate corresponding to the fourth value having the second relationship with respect to the third value corresponding to the outside of the substrate in the second direction is set as the reference position. Easily determined. Thereby, the position of the edge part of the main surface of a board | substrate can be determined correctly and easily.
(6) The second relationship may include that the fourth value is larger than the third value by a certain percentage or a certain amount.
In this case, the reference position is determined more accurately and easily. Thereby, the position of the edge part of the main surface of a board | substrate can be determined more correctly and easily.
(7) The position determining unit may determine a position at a predetermined distance from the center of the substrate as a reference position.
In this case, the reference position is easily determined based on the size of the substrate. Thereby, the position of the edge part of the main surface of a board | substrate can be determined correctly and easily.
(8) The position determination unit acquires received light data corresponding to the received light amount of the received light amount detection unit based on reflected light from a plurality of positions on the substrate, and the value of the acquired received light data is determined from a predetermined threshold value. The position of the larger substrate may be determined as the reference position.
In this case, the position of the substrate in which the value of the received light data is larger than a predetermined threshold value is easily determined as the reference position. Thereby, the position of the edge part of the main surface of a board | substrate can be determined correctly and easily.
(9) A substrate processing method according to a second reference embodiment is a substrate processing method for processing a substrate having at least a part of a circular outer peripheral part and a flat main surface, wherein the outermost peripheral part of the substrate is processed. A step of forming a film of the treatment liquid on the main surface of the substrate except for a peripheral portion of a predetermined width on the main surface of the substrate on the inner side, and irradiating at least a part of the film on the main surface of the substrate and the peripheral portion In addition, the step of receiving the reflected light from the substrate and the received light data corresponding to the received light amount of the reflected light are obtained, and the first position from the reference position in the peripheral portion on the main surface of the substrate toward the outermost peripheral portion of the substrate. Determining the position of the end portion of the main surface of the substrate based on the change in the received light data in the direction.
In this substrate processing method, a film of the processing liquid is formed on the main surface of the substrate except for a peripheral portion having a predetermined width on the main surface of the substrate inside the outermost peripheral portion of the substrate. Light is irradiated to at least a part of the film on the main surface of the substrate and the peripheral portion, and reflected light from the substrate is received. Further, the received light data corresponding to the received light amount of the received light amount detection unit is acquired.
Here, the main surface of the substrate is flat and no film is formed on the periphery of the main surface. Therefore, the amount of light received based on the reflected light from the peripheral edge is substantially constant. On the other hand, the bevel portion between the end portion of the main surface of the substrate and the outermost peripheral portion of the substrate is inclined or curved with respect to the main surface of the substrate. Therefore, the amount of light received based on the reflected light from the bevel portion is different from the amount of light received based on the reflected light from the peripheral portion. Thereby, the amount of light received based on the reflected light from the substrate changes with the end of the main surface of the substrate as a boundary. Therefore, the position of the end portion of the main surface of the substrate can be determined based on the change in the received light data in the first direction from the reference position in the peripheral portion on the main surface of the substrate toward the outermost peripheral portion of the substrate.
In this case, the position where the light reception data changes is not affected by the surface shape and surface state of the bevel portion. Therefore, even when there are individual differences in the surface shape and surface state of the bevel portion of the substrate, the position of the end portion of the main surface of the substrate can be accurately determined. As a result, it becomes possible to accurately measure the width of the peripheral edge between the end of the film on the main surface of the substrate and the end of the main surface of the substrate.

  The present invention can be effectively used for processing various substrates.

DESCRIPTION OF SYMBOLS 11 Indexer block 12 1st process block 13 2nd process block 14 Interface block 14A Cleaning / drying process block 14B Loading / unloading block 15 Exposure apparatus 15a Substrate carrying-in part 15b Substrate carrying-out part 21-24 Coating process chamber 25, 35 Spin chuck 27 , 37 Cup 28 Treatment liquid nozzle 28a Grasping part 29 Nozzle transport mechanism 30 Edge rinse nozzle 30a Edge rinse nozzle drive part 30b Rinse liquid supply system 31-34 Development processing chamber 38 Development nozzle 39 Moving mechanism 50, 60 Fluid box part 80 Host computer 90 Operation section 100 Substrate processing apparatus 111 Carrier placement section 112, 122, 132, 163 Transport section 113 Carrier 114 Main controller 115, 127, 128, 137, 138, 141, 1 42,146 transport mechanism 116, H1, H2 hand 121 coating processing unit 123, 133 heat treatment unit 125, 135 upper transport chamber 126, 136 lower transport chamber 129 coating processing unit 131 development processing unit 139 development processing unit 161, 162 cleaning and drying processing 280 Waiting unit 291-293 Grasping part moving mechanism 291a Nozzle gripping part 291b Holding arm 292a, 293a Ball screw 292b, 293b Guide 301, 303 Upper heat treatment part 302, 304 Lower heat treatment part 510 Light projecting part 520 Light projecting part holding unit 521 X direction drive motor 522 X direction ball screw 523 Emitter holding guide 524 Post 531 Y direction drive motor 532 Post support guide 533 Y direction ball screw 540 Substrate rotation unit 541 Substrate rotation motor 542 Rotating shaft 543 Spin chuck 580 State detection processing unit 581 Illuminating unit 582 Reflecting mirror 583 CCD line sensor bg, eg Gradation value B Bevel unit BP Temporary end position C11, C21 Heat treatment control unit C12, C22 Transport control unit C13 Application processing control Part C23 Development processing control part C24 Edge exposure control part C31 Illumination control part C32 CCD line sensor control part CP Cooling unit d1 Edge image data D1, D2 Edge cut width E Edge EEW Edge exposure part EP Main edge position F1 Antireflection Film F2 Resist film LC1, LC2 Local controller MC State detection controller og Representative value OM Outermost peripheral part P Peripheral part P1 Axis center PAHP Adhesion strengthening processing unit PASS1 to PASS9 Substrate mounting part P-BF1, P-BF2 Mounting / buffer P-CP placement 置兼 cooling unit PHP thermal processing unit PN main panel R band regions SD1, SD2 cleaning and drying process unit sg reference grayscale value SP reference position T1 region W substrate W1 center

Claims (7)

A substrate processing apparatus for processing a substrate having at least a part of a circular outer periphery and a flat main surface,
A film forming unit that forms a film of a processing solution on the main surface of the substrate except for a peripheral portion of a predetermined width on the main surface of the substrate inside the outermost peripheral portion of the substrate;
A light receiving amount detector that irradiates at least a part of the film on the main surface of the substrate and the peripheral portion with light, and receives reflected light from the substrate;
The substrate receives light reception data corresponding to the light reception amount of the light reception amount detection unit, and based on a change in the light reception data in a first direction from the reference position in the peripheral portion on the main surface of the substrate toward the outermost peripheral portion of the substrate. and a position determination unit that determines the position of the end portion of the main surface of,
The position-determining unit, that determine the position of a predetermined a predetermined distance from the center of the substrate as the reference position, the substrate processing apparatus. A substrate processing apparatus for processing a substrate having at least a part of a circular outer periphery and a flat main surface,
A film forming unit that forms a film of a processing solution on the main surface of the substrate except for a peripheral portion of a predetermined width on the main surface of the substrate inside the outermost peripheral portion of the substrate;
A light receiving amount detector that irradiates at least a part of the film on the main surface of the substrate and the peripheral portion with light, and receives reflected light from the substrate;
The substrate receives light reception data corresponding to the light reception amount of the light reception amount detection unit, and based on a change in the light reception data in a first direction from the reference position in the peripheral portion on the main surface of the substrate toward the outermost peripheral portion of the substrate. A position determining unit that determines the position of the end of the main surface of
The position determination unit acquires the value of the received light data corresponding to the reference position as the first value, and then sets the value of the received light data having the first relationship to the acquired first value to the second value. The substrate processing apparatus determines the position of the substrate corresponding to the acquired second value as the position of the end portion of the main surface of the substrate. The substrate processing apparatus according to claim 2, wherein the first relationship includes that the second value is smaller than the first value by a certain rate or a certain amount. A substrate processing apparatus for processing a substrate having at least a part of a circular outer periphery and a flat main surface,
A film forming unit that forms a film of a processing solution on the main surface of the substrate except for a peripheral portion of a predetermined width on the main surface of the substrate inside the outermost peripheral portion of the substrate;
A light receiving amount detector that irradiates at least a part of the film on the main surface of the substrate and the peripheral portion with light, and receives reflected light from the substrate;
The substrate receives light reception data corresponding to the light reception amount of the light reception amount detection unit, and based on a change in the light reception data in a first direction from the reference position in the peripheral portion on the main surface of the substrate toward the outermost peripheral portion of the substrate. A position determining unit that determines the position of the end of the main surface of
The said position determination part is a substrate processing apparatus which determines the said reference position based on the change of the light reception data in the 2nd direction which goes to the center of a board | substrate from the outer side of a board | substrate. The position determination unit acquires the value of the received light data corresponding to the outside of the substrate as the third value, and then sets the value of the received light data having the second relationship to the acquired third value to the fourth value. The substrate processing apparatus according to claim 4, wherein a position that is a predetermined distance away from the position of the substrate corresponding to the acquired fourth value in the second direction is determined as the reference position. The substrate processing apparatus according to claim 5, wherein the second relationship includes that the fourth value is larger than the third value by a certain ratio or a certain amount. A substrate processing apparatus for processing a substrate having at least a part of a circular outer periphery and a flat main surface,
A film forming unit that forms a film of a processing solution on the main surface of the substrate except for a peripheral portion of a predetermined width on the main surface of the substrate inside the outermost peripheral portion of the substrate;
A light receiving amount detector that irradiates at least a part of the film on the main surface of the substrate and the peripheral portion with light, and receives reflected light from the substrate;
The substrate receives light reception data corresponding to the light reception amount of the light reception amount detection unit, and based on a change in the light reception data in a first direction from the reference position in the peripheral portion on the main surface of the substrate toward the outermost peripheral portion of the substrate. A position determining unit that determines the position of the end of the main surface of
The position determination unit acquires received light data corresponding to the received light amount of the received light amount detection unit based on reflected light from a plurality of positions on the substrate, and a value of the acquired received light data is less than a predetermined threshold value large to determine the position of the substrate as the reference position, the substrate processing apparatus.

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