JP2017008409A - Vacuum evaporation device, production method of evaporation film and production method of organic electronic device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a vacuum evaporation device which enables deposition of a desired pattern in high accuracy by avoiding thermal deformation during evaporation.SOLUTION: The vacuum evaporation device includes, in an evaporation chamber 1: an evaporation source 2 for evaporating a substrate through a mask; and an evaporation source moving mechanism for relatively moving the evaporation source 2 to the substrate when evaporating, or a substrate moving mechanism for relatively moving the substrate to the evaporation source when evaporating. The evaporation source moving mechanism or the substrate moving mechanism are composed so that preheating of the mask is performed by using the evaporation source 2, before starting evaporation to the substrate.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a vacuum deposition apparatus, a method for producing a deposited film, and a method for producing an organic electronic device.

  In a vapor deposition apparatus that deposits a film forming material evaporating from an evaporation source on a substrate through a mask on which a predetermined mask pattern is formed to form a thin film, the mask is an evaporation source during vapor deposition (during film formation). The thermal deformation of the mask may cause the mask and the substrate to be displaced from each other, and the thin film pattern formed on the substrate may be displaced from the desired position. In particular, since a mask having a high-definition pattern is used for manufacturing an organic electronic device such as a display panel of a mobile phone or a television, the influence of thermal deformation is large.

  Thus, for example, as disclosed in Patent Document 1, it has been proposed to use a mask made of an invar material which is a low thermal expansion material in order to suppress thermal deformation, but even if a low thermal expansion material is used for the mask, It is difficult to set the linear expansion coefficient to 0, and thermal deformation may be a problem even in this case.

JP 2004-323888 A

  The present invention has been made in view of the above situation, and an object of the present invention is to provide a vacuum deposition apparatus capable of forming a film with a desired pattern with high accuracy by suppressing thermal deformation during deposition of a mask.

  The gist of the present invention will be described with reference to the accompanying drawings.

  In the first aspect of the present invention, an evaporation source 2 that performs evaporation on a substrate through a mask and an evaporation source movement that moves the evaporation source 2 relative to the substrate when performing evaporation are provided in the evaporation chamber 1. A vacuum deposition apparatus provided with a mechanism or a substrate moving mechanism for moving the substrate relative to the evaporation source when performing evaporation, before starting evaporation on the substrate, the evaporation source 2 The vacuum evaporation apparatus is characterized in that the evaporation source moving mechanism or the substrate moving mechanism is configured so that the mask is pre-heated using the above-mentioned.

  In addition, the preheating of the mask is performed using the heat generated from the evaporation source 2 during the preheating before the deposition for stabilizing the film forming speed of the film forming material evaporated from the evaporation source 2. The present invention relates to a vacuum deposition apparatus.

  In addition, the evaporation source 2 is provided with a shutter 7, and the mask is preheated by changing the relative positional relationship between the evaporation source and the mask with the shutter 7 closed. The present invention relates to a vacuum deposition apparatus.

  Further, in the vacuum deposition apparatus, the evaporation source moving mechanism is configured so that the alignment of the substrate and the mask on which deposition is performed first in the continuous deposition is performed in parallel with the preheating of the mask. It is concerned.

  Further, a plurality of vapor deposition regions 3 and 4 for performing vapor deposition on the substrate in the vapor deposition chamber 1 are arranged side by side in a direction orthogonal to the moving direction of the evaporation source, and for each of the plurality of vapor deposition regions 3 and 4, A retreat area for retracting the evaporation source is provided outside the vapor deposition area, and the evaporation source 2 is moved in the same direction as the juxtaposition direction of the vapor deposition areas 3 and 4 from one vapor deposition area to the other vapor deposition area. The evaporation source moving mechanism is configured to be movable, and when the masks disposed in the plurality of vapor deposition regions 3 and 4 are preheated, the mask disposed in one vapor deposition region is heated, and then the evaporation is performed. The evaporation source moving mechanism is configured to move the source 2 to the other vapor deposition region by moving the source 2 in the parallel arrangement direction of the vapor deposition regions 3 and 4 without retreating to the retreat region. This relates to a vacuum deposition apparatus.

  A second aspect of the present invention is a method for manufacturing a vapor deposition film, the step of placing a substrate in a vapor deposition chamber, the step of stabilizing a film deposition rate by heating a film deposition material accommodated in an evaporation source, and a mask Adhering the vapor of the vapor deposition material to the substrate via, and changing the relative positional relationship between the evaporation source and the substrate during the step of stabilizing the film formation speed, The present invention relates to a method for manufacturing a deposited film, wherein the mask is heated by heat of an evaporation source.

  A third aspect of the present invention is a method of manufacturing an organic electronic device having a plurality of elements each having an organic layer sandwiched between a pair of electrodes on a substrate, wherein the substrate on which the plurality of electrodes are formed is used as a deposition chamber. A step of positioning, a step of aligning a mask having a plurality of openings with respect to the substrate, a step of stabilizing a film formation rate by heating a film formation material accommodated in an evaporation source, and the mask. Attaching the vapor of the film forming material onto the substrate to form at least a part of the organic layer, and during the step of stabilizing the film forming rate, the evaporation source and the substrate The relative positional relationship is changed, and the mask is heated by the heat of the evaporation source. This relates to a method of manufacturing an organic electronic device.

  ADVANTAGE OF THE INVENTION According to this invention, it becomes possible to form into a desired pattern with high precision, suppressing the thermal deformation during vapor deposition of a mask.

It is a schematic explanatory perspective view of a present Example. It is a schematic explanatory plan view of a present Example. It is a schematic explanatory plan view of a present Example. It is a schematic explanatory plan view of a present Example. (A) is a perspective view of the organic electroluminescence display produced using the vacuum evaporation system concerning this invention, (b) is the AB sectional view taken on the line of (a).

  An embodiment of a vacuum deposition apparatus according to the present invention will be specifically described with reference to the drawings.

  A vacuum deposition apparatus according to an embodiment of the present invention includes: an evaporation source (material storage unit) that performs evaporation on a substrate through a mask; and an evaporation source that is relative to the substrate when performing evaporation. It is a vacuum evaporation system provided with the evaporation source moving mechanism to which it moves to. The evaporation source moving mechanism is configured to obtain a relative positional relationship between the evaporation source and the substrate, more specifically, a relative positional relationship between the evaporation source and the substrate in a plane direction parallel to the film formation surface of the substrate. It has a function to change. Then, before starting the deposition on the substrate while maintaining the vacuum state of the deposition chamber, the evaporation source is moved relative to the mask, and the heat generated from the evaporation source is used for the mask. The evaporation source moving mechanism is configured to preheat the liquid. In the present embodiment, the relative positional relationship between the evaporation source and the substrate is changed by moving the evaporation source by the evaporation source moving mechanism, but the substrate moving mechanism is provided in the vapor deposition chamber to move the substrate. The relative positional relationship between the evaporation source and the substrate may be changed by the above, or the relative positional relationship between the evaporation source and the substrate may be changed by moving both the substrate and the evaporation source. Therefore, both the evaporation source moving mechanism and the substrate moving mechanism mentioned here can also be called a relative positional relationship changing mechanism between the evaporation source and the substrate.

  1 and 2 show an embodiment of a vacuum deposition apparatus according to the present invention. FIG. 1 is a perspective view in which a part of the wall of the vapor deposition chamber 1 is removed so that the inside of the vacuum vapor deposition apparatus can be seen, and FIG. 2 is a plan view seen from the upper surface side of the vapor deposition chamber 1. In the vapor deposition chamber 1, a plurality of vapor deposition regions 3 and 4 for performing vapor deposition on the substrate are arranged in parallel in a direction orthogonal to the film formation movement direction (vapor deposition region movement direction). Further, a retreat area for retreating the evaporation source 2 is provided outside the vapor deposition areas 3 and 4 for each of the vapor deposition areas 3 and 4.

  Each of the vapor deposition zones 3 and 4 is provided with a mask base (not shown) for holding the mask and the substrate. The substrates carried in from the respective carry-in / out ports 8 and 9 corresponding to the respective vapor deposition zones 3 and 4 are aligned with the masks by alignment mechanisms provided in the vapor deposition zones 3 and 4, respectively, and then superposed on the masks. In a fixed state, each is installed and held on a mask base.

  The vapor deposition region refers to a region where the film forming material evaporated from the evaporation source 2 adheres to the substrate.

  In this embodiment, in order to stabilize the deposition rate of the deposited film formed by the vapor released from the evaporation source 2, the heat generated from the evaporation source 2 is used during preheating before starting the deposition. Then, the evaporation source moving mechanism is configured to preheat the mask. Specifically, before vapor deposition is started, the evaporation source 2 is moved back and forth in the film formation movement direction in the vapor deposition regions 3 and 4 with the longitudinal direction or the width direction of the substrate as the film formation movement direction. Run-in. This movement does not necessarily need to be a reciprocating motion, and may be a circular motion or the like. In addition, if the fluctuation | variation of the film-forming speed is suppressed compared with the case where preheating is not performed, the said pre-heating is for stabilizing the film-forming speed. The preheating is preferably performed so that the fluctuation of the film forming speed is within a predetermined range. However, it is not necessary to verify each time whether or not the film is within a predetermined range, and the preliminary heating time may be determined by a preliminary experiment or the like.

  This preheating is performed in order to stabilize the molten state of the film forming material so that the degassing of the film forming material accommodated in the evaporation source 2 and the film forming speed are stabilized. The temperature is raised to a temperature similar to the heating temperature during film formation and heated for several minutes. In addition, the evaporation source 2 of a present Example is comprised by three line sources, as FIG. 2 shows.

  Further, during the preliminary heating of the evaporation source 2, the alignment of the substrate and the mask on which vapor deposition is performed first may be performed in parallel.

  That is, it is preferable to perform preheating of the mask using a deposition preparation period such as alignment of the substrate and mask and preheating of the evaporation source 2.

  In order to further shorten the time required to start the film formation, the preheating temperature of the evaporation source 2 and the evaporation by the evaporation source moving mechanism are finished so that the preheating of the mask is finished when the alignment between the substrate and the mask is finished. It is preferable to set the moving speed of the source 2. Thereby, it is possible to reduce the waiting time only for the preheating of the mask, and to perform the preheating of the mask using the deposition preparation period, and the mask is thermally deformed during the deposition by the heat generated from the evaporation source 2. Can be prevented. Further, the heat source for preheating is the evaporation source 2, and it is not necessary to prepare another heat source. Further, since the heat generated during the preheating of the evaporation source 2 is used, efficient preheating is performed. Can do.

  In the prior art, the preheating of the evaporation source is performed by placing the evaporation source in the retreat area (the area where the evaporation material does not adhere to the substrate), and therefore the preheating of the evaporation source does not contribute to the preheating of the mask. .

  As shown in FIG. 1, it is preferable that the evaporation source 2 is provided with a shutter 7, and the mask is preheated by reciprocating the mask with the shutter 7 closed. Specifically, the shutter 7 is provided above the evaporation source 2 so as to be openable and slidable. Even when the shutter 7 is provided, the shutter 7 is heated by the evaporation source 2 and the mask is heated by the heated shutter 7. As represented by this example, a configuration in which the evaporation source is heated while the relative position between the evaporation source and the substrate is changed while the evaporation source shutter is closed is a preferred embodiment of the present invention. With such a configuration, the mask can be efficiently pre-heated in the state where the evaporation source exists directly under the substrate, and the film can be prevented from adhering to the substrate in the pre-heating stage. . The shutter may be any shutter that can shield the vapor emitted from the evaporation source from adhering to the substrate, and is not necessarily provided in the evaporation source.

  In the present embodiment, the evaporation source 2 is moved in the same direction as the side-by-side direction of the vapor deposition regions 3 and 4 (deposition region movement direction) and moved from one vapor deposition region 3 to the other vapor deposition region 4. Thus, the evaporation source moving mechanism is configured.

  Specifically, in this embodiment, a rail 10 extending in the direction of movement of the vapor deposition region is provided on the bottom surface of the vapor deposition chamber 1, and a frame-shaped vapor deposition region moving slider 6 capable of reciprocating sliding relative to the rail 10 is provided. Then, a rail 11 extending in the film forming movement direction is provided on the upper surface of the deposition region moving slider 6, and a film forming movement slider 5 capable of reciprocating sliding with respect to the rail 11 is provided. In this configuration, the evaporation source 2 and the shutter 7 are provided. Further, an arm member 12 for moving the film formation moving slider 5 is connected to the bottom surface of the film formation moving slider 5. A control device for driving the arm member 12 to move the film formation movement slider 5 (evaporation source 2) in the film formation movement direction or the vapor deposition region movement direction is provided outside the vapor deposition chamber 1, and the evaporation source movement mechanism. Is configured.

  Accordingly, after one evaporation source 2 is reciprocated in the deposition movement direction in one vapor deposition region 3 to perform preheating or film formation, it is moved in the vapor deposition region movement direction and similarly in the other vapor deposition region 4. Preheating or film formation can be performed.

  Further, in this embodiment, when the masks arranged in the plurality of vapor deposition regions 3 and 4 are preheated, the vapor deposition regions 3 and 4 are arranged in parallel without retreating the evaporation source 2 to the retreat region. The evaporation source moving mechanism is configured to move in one direction and move from one vapor deposition region 3 to the other vapor deposition region 4.

  In FIG. 3, the locus | trajectory of the vapor deposition source 2 after vapor deposition start to a board | substrate is shown with a thick line. When a film is formed on a substrate installed in one vapor deposition region 3, the evaporation source 2 is moved from one retraction region to the other retraction region of two retraction regions provided with the vapor deposition region 3 in the direction in which the rail 10 extends. Until it passes through the vapor deposition zone 3 by a predetermined number of times. When film formation is performed on the substrate installed in the other vapor deposition region 4 after film formation on the substrate disposed in the vapor deposition region 3, the evaporation source 2 located in the retreat region outside the vapor deposition region 3 is connected to the vapor deposition region 4. It moves in the deposition area moving direction until it reaches the outside retreat area. The evaporation source 2 reciprocates a predetermined number of times so as to pass through the vapor deposition region 4 from one retraction region to the other retraction region of the two retraction regions provided with the vapor deposition region 4 sandwiched in the direction in which the rail 10 extends. Repeat moving. In this way, film formation can be performed on each of the substrates installed in the respective vapor deposition regions 3 and 4.

  On the other hand, the locus | trajectory of the vapor deposition source 2 at the time of performing preheating of a mask before starting vapor deposition is shown by a thick line in FIG. In the case of preheating a mask placed in one vapor deposition region 3, as shown in FIG. 4, the evaporation source 2 is reciprocated a predetermined number of times in the film formation movement direction along the rail 10 in the vapor deposition region 3. Then, when pre-heating the mask installed in the other vapor deposition region, the vapor deposition source 2 is not moved to the retreat region outside the vapor deposition region 3 and the other vapor deposition region is moved from the end of the vapor deposition region 3. 4 is moved in the deposition region moving direction until reaching the corresponding end of 4. And the mask installed in the vapor deposition area | region 4 is pre-heated by repeating the evaporation source 2 reciprocating the vapor deposition area | region 4 in the film-formation movement direction predetermined times. In this way, the mask can be preheated until the mask placed in the vapor deposition zones 3 and 4 is thermally saturated.

  When preheating the mask, unlike the case of vapor deposition, the mask can be preheated more efficiently by preventing the evaporation source 2 from moving to the retreat area.

  As described above, in the present embodiment, when vapor deposition is performed, the masks of the respective vapor deposition regions are preheated and thermally saturated before the vapor deposition is started. Vapor deposition is continuously performed on the substrates arranged sequentially. By forming the film in this way, the thermal deformation of the mask during the vapor deposition is suppressed, the pattern of the thin film formed on the substrate during the vapor deposition is hardly changed, and the film can be stably and highly accurately formed. .

  Since the inside of the vapor deposition chamber 1 is kept in a vacuum state, after each mask is preheated before the vapor deposition is started, it is possible to maintain the thermally saturated state of the mask. Therefore, even if vapor deposition is continuously performed on a plurality of substrates, stable and highly accurate film formation is possible.

  Note that the present invention is not limited to this embodiment and the like, and the specific configuration of each component can be designed as appropriate.

  Next, the Example which manufactures an organic electroluminescence display as an example of an organic electronic device using the vacuum evaporation system concerning this invention is described.

  First, an organic EL display device to be manufactured will be described. FIG. 5A shows an overall view of the organic EL display device 40, and FIG. 5B shows a cross-sectional structure of one pixel.

  As shown in FIG. 5A, in the display area 41 of the display device 40, a plurality of pixels 42 including a plurality of light emitting elements are arranged in a matrix. Although details will be described later, each of the light-emitting elements has a structure including an organic layer sandwiched between a pair of electrodes. Here, the pixel refers to a minimum unit that enables display of a desired color in the display area 41. In the case of the display device according to this example, the pixel 42 is configured by a combination of the first light emitting element 42R, the second light emitting element 42G, and the third light emitting element 42B that emit different light. The pixel 42 is often composed of a combination of a red light emitting element, a green light emitting element, and a blue light emitting element, but may be a combination of a yellow light emitting element, a cyan light emitting element, and a white light emitting element. It is not limited.

  FIG. 5B is a schematic partial cross-sectional view taken along the line AB of FIG. The pixel 42 has a first electrode (anode) 44, a hole transport layer 45, one of the light emitting layers 46R, 46G, and 46B, an electron transport layer 47, and a second electrode (cathode) 48 on a substrate 43. And an organic EL element. Among these, the hole transport layer 45, the light emitting layers 46R, 46G, and 46B, and the electron transport layer 47 correspond to the organic layer. In the present embodiment, the light emitting layer 46R is an organic EL layer that emits red, the light emitting layer 46G is an organic EL layer that emits green, and the light emitting layer 46B is an organic EL layer that emits blue. The light emitting layers 46R, 46G, and 46B are formed in patterns corresponding to light emitting elements that emit red, green, and blue, respectively (sometimes referred to as organic EL elements). The first electrode 44 is formed separately for each light emitting element. The hole transport layer 45, the electron transport layer 47, and the second electrode 48 may be formed in common with the plurality of light emitting elements 42, or may be formed for each light emitting element. Note that an insulating layer 49 is provided between the first electrodes 44 in order to prevent the first electrode 44 and the second electrode 48 from being short-circuited by foreign matter. Furthermore, since the organic EL layer is deteriorated by moisture and oxygen, a protective layer 50 is provided for protecting the organic EL element from moisture and oxygen.

  In order to form the organic EL layer in units of light emitting elements, a method of forming a film through a mask is used. In recent years, display devices have been improved in definition, and a mask having an opening width of several tens of μm is used for forming an organic EL layer. In the case of film formation using such a mask, if the mask receives heat from the evaporation source during film formation and is thermally deformed, the position of the mask and the substrate is shifted, and the pattern of the thin film formed on the substrate is desired. It will be formed out of position. Therefore, the vacuum evaporation apparatus according to the present invention is suitably used for forming these organic EL layers.

  Next, an example of a method for manufacturing an organic EL display device will be specifically described.

  First, a circuit (not shown) for driving the organic EL display device and a substrate 43 on which the first electrode 44 is formed are prepared.

  An acrylic resin is formed on the substrate 43 on which the first electrode 44 is formed by spin coating, and the acrylic resin is patterned by lithography so that an opening is formed in the portion where the first electrode 44 is formed. 49 is formed. This opening corresponds to a light emitting region where the light emitting element actually emits light.

  The substrate 43 on which the insulating layer 49 is patterned is carried into a vacuum deposition apparatus, and the hole transport layer 45 is formed as a common layer on the first electrode 44 in the display region. A hole transport layer 45 was formed by vacuum deposition. Actually, since the hole transport layer 45 is formed in a size larger than the display region 41, a high-definition mask is unnecessary.

  Next, using a vapor deposition mask, a light emitting layer 46R that emits red is formed on a portion where an element that emits red is disposed. First, the substrate 43 on which the hole transport layer 45 is formed is carried into the vapor deposition region 3 of the vacuum vapor deposition apparatus of FIG. 1 and aligned with a mask having an opening corresponding to the region where the first light emitting element 42R is formed ( Alignment).

  When the mask to be used is not thermally saturated, the mask receives heat from the evaporation source during film formation and is thermally deformed to shift the position of the mask and the substrate, so that the light emitting layer 46R can be formed at a desired position. There is a risk of disappearing. Therefore, it is desirable to preheat the mask using the heat of the vapor deposition source 2 until the mask is thermally saturated before vapor deposition on the substrate 43 is started. Whether the mask is thermally saturated is determined whether the temperature of the mask is stabilized, specifically, whether the temporal variation of the temperature of the mask that rises due to the heat of the vapor deposition source 2 falls within a predetermined range. It is good to confirm. The predetermined range can be determined according to the accuracy required for film formation.

  On the other hand, the vapor deposition source 2 contains an organic EL material which is a material of the light emitting layer 46R, and preheating is performed as preparation for evaporating the organic material and depositing it on the substrate. The preheating heats the evaporation source 2 at a temperature similar to the heating temperature at the time of film formation for about several minutes in order to stabilize the molten state of the film forming material accommodated in the evaporation source 2. Whether or not the melted state of the film forming material is stable may be determined by looking at the change over time in the film forming speed (deposition rate) obtained using a film thickness monitor (not shown). When the melted state of the film forming material is stabilized, the amount of vapor of the film forming material released from the evaporation source 2 is stabilized, so that the fluctuation of the film forming speed falls within a predetermined range.

  In this example, the mask is preheated using the heat generated by the preheating of the evaporation source 2 and the time required for the preheating. Specifically, in a state where the shutter 7 is closed and vapor does not adhere to the substrate, the vapor deposition source 2 is reciprocated in the vapor deposition region to heat the mask. When the temperature of the mask is stabilized before the preheating is completed, the deposition source 2 is ready for film formation at the same time as the preheating of the vapor deposition source 2 is completed. In order to start film formation at the same time as the preliminary heating of the vapor deposition source 2 is completed, it is more efficient to align the substrate and the mask during the preheating of the mask. If the mask temperature is not stable even after the preheating is completed, the mask is continuously heated by the vapor deposition source 2 until the mask temperature is stabilized.

  After confirming that the mask is thermally stable and the alignment between the substrate and the mask is completed, the vapor deposition source 2 is connected to one of the two retreat areas provided with the vapor deposition area 3 in the direction in which the rail 10 extends. Move to. Thereafter, the shutter 7 is opened and the evaporation source 2 starts moving toward the other retreat area to start the evaporation, and the light emitting layer 46R is formed by reciprocating between the two retreat areas.

  Thus, according to this example, since the mask is not deformed during the formation of the light emitting layer 46R, the light emitting layer 46R can be formed on the substrate in a predetermined pattern. Further, not only is a separate heating facility unnecessary, but there is no need to spend time just for preheating the mask. That is, while pre-heating the evaporation source 2, the mask can be pre-heated very efficiently using heat generated during pre-heating and a waiting time for pre-heating.

  Subsequently, similarly to the formation of the light emitting layer 46R, the light emitting layer 46G emitting green is formed using a mask having an opening corresponding to the region where the second light emitting element 42G is formed. Subsequently, a light emitting layer 46B emitting blue light is formed using a mask having an opening corresponding to a region where the third light emitting element 42B is formed. When each of the light emitting layers 46G and 46B is formed, the evaporation source 2 is moved relative to the mask in the same manner as before the light emitting layer 46R is formed, and the mask is thermally saturated. After confirming this, film formation is started.

  Once the mask used for forming each of the light emitting layers 46R, 46G, and 46B is in a vacuum deposition chamber until the next substrate is installed. Therefore, since the heat of the mask is maintained by the vacuum, the thermal saturation state of the mask is maintained. Therefore, it is possible to omit the preheating of the mask before starting the film formation on the next substrate. If the mask and the substrate are aligned and brought into contact, the mask heat escapes to the substrate and the mask temperature drops, or the deposition rate of the deposited film is changed. Similarly, the mask may be preheated using the heat from the vapor deposition source 2 before vapor deposition is started on the substrate.

  After the formation of the light emitting layers 46G and 46B is completed, the electron transport layer 45 is formed over the entire display region 41. The electron transport layer 45 is formed as a layer common to the first to third light emitting layers.

  The substrate on which the electron transport layer 45 is formed is moved to the sputtering device, the second electrode 46 is formed, and then the protective layer 40 is formed by moving to the plasma CVD device, and the organic EL display device 40 is completed. To do.

  From the time when the substrate 43 on which the insulating layer 49 is patterned is carried into the vacuum deposition apparatus until the film formation of the protective layer 40 is completed, if the light emitting layer made of an organic EL material is exposed to an atmosphere containing moisture or oxygen, There is a risk of deterioration due to moisture and oxygen. Therefore, in this example, the carrying-in / out of the substrate between the film forming apparatuses is performed in a vacuum atmosphere or an inert gas atmosphere.

  In the above example, the mask is preheated when the light emitting layer is formed, but the mask can be preheated when other layers are formed.

  The organic EL display device thus obtained can accurately form a light emitting layer for each light emitting element. Therefore, if the manufacturing method is used, it is possible to suppress the occurrence of defects in the organic EL display device due to the displacement of the light emitting layer.

  In addition, although the manufacturing method of the organic EL display device was described here, the present invention is similarly applied to the manufacturing method of all organic electronic devices in which the pattern of the organic layer is formed using a mask at the time of vapor deposition. Can be applied. In addition, the present invention can be applied to the formation of inorganic films as well as organic films.

DESCRIPTION OF SYMBOLS 1 Deposition chamber 2 Evaporation source 3.4 Deposition area 7 Shutter

Claims (12)

  An evaporation source that performs evaporation on the substrate through a mask, an evaporation source moving mechanism that moves the evaporation source relative to the substrate when performing evaporation, or the substrate when performing evaporation; A vacuum evaporation apparatus provided with a substrate moving mechanism that moves relative to an evaporation source, wherein the mask is preheated using the evaporation source before starting evaporation on the substrate. The vacuum evaporation apparatus, wherein the evaporation source moving mechanism or the substrate moving mechanism is configured.   The preheating of the mask is performed using heat generated from the evaporation source during preheating before vapor deposition for stabilizing the film forming rate of the film forming material evaporated from the evaporation source. Item 2. The vacuum evaporation apparatus according to Item 1.   The shutter is provided in the evaporation source, and the mask is preheated by changing the relative positional relationship between the evaporation source and the mask in a state where the shutter is closed. The vacuum evaporation apparatus of any one of 1 and 2.   4. The evaporation source moving mechanism or the substrate moving mechanism is configured such that alignment of a substrate and a mask on which vapor deposition is performed first is performed in parallel with preheating of the mask. The vacuum evaporation apparatus of any one of these. A plurality of vapor deposition regions for performing vapor deposition on the substrate in the vapor deposition chamber are arranged side by side in a direction perpendicular to the moving direction of the evaporation source,
For each of the plurality of vapor deposition regions, a retreat region for retreating the evaporation source is provided outside the vapor deposition region,
The evaporation source moving mechanism is configured so that the evaporation source can be moved in the same direction as the juxtaposition direction of the evaporation regions and moved from one evaporation region to the other evaporation region,
When preliminarily heating the masks disposed in each of the plurality of vapor deposition regions, the masks disposed in one vapor deposition region are heated, and then the vapor deposition regions are arranged side by side without retracting the evaporation source in the retreat region. The vacuum evaporation apparatus according to any one of claims 1 to 4, wherein the evaporation source moving mechanism is configured to move in the direction and move to the other evaporation region.   An evaporation source that deposits on the substrate through a mask in the deposition chamber, and when the deposition is performed, the evaporation source reciprocates in the deposition movement direction in either the longitudinal direction or the width direction of the substrate. A vacuum evaporation apparatus provided with a moving evaporation source moving mechanism, wherein the evaporation source is turned on before starting continuous evaporation in which evaporation is continuously performed on the plurality of substrates while maintaining the vacuum state of the evaporation chamber. The vacuum evaporation apparatus, wherein the evaporation source moving mechanism is configured to perform preheating of the mask by moving the mask. A method for producing a deposited film, comprising:
Installing the substrate in the vapor deposition chamber;
Heating the film forming material accommodated in the evaporation source to stabilize the film forming speed;
Attaching a vapor of the vapor deposition material to the substrate through a mask;
Have
A method for producing a vapor deposition film, wherein the relative positional relationship between the evaporation source and the substrate is changed during the step of stabilizing the deposition rate, and the mask is heated by heat of the evaporation source.   The method for producing a vapor deposition film according to claim 7, wherein vapor of the vapor deposition material is shielded from adhering to the substrate while the mask is heated by heat of the evaporation source.   9. The method of manufacturing a vapor deposition film according to claim 8, wherein the mask is heated until the temperature of the mask is stabilized before the step of attaching the vapor of the film forming material to the substrate. A method for producing an organic electronic device comprising a plurality of elements comprising an organic layer sandwiched between a pair of electrodes on a substrate,
Installing a substrate on which a plurality of electrodes are formed in a vapor deposition chamber;
Aligning a mask with a plurality of openings with respect to the substrate;
Heating the film forming material accommodated in the evaporation source to stabilize the film forming speed;
Depositing vapor of the film-forming material on the substrate through the mask to form at least a part of the organic layer;
Have
A method of manufacturing an organic electronic device, wherein the relative positional relationship between the evaporation source and the substrate is changed during the step of stabilizing the film formation rate, and the mask is heated by the heat of the evaporation source. .   11. The method of manufacturing an organic electronic device according to claim 10, wherein vapor of the vapor deposition material is shielded from adhering to the substrate while the mask is heated by heat of the evaporation source.   12. The method of manufacturing an organic electronic device according to claim 11, wherein the mask is heated until the temperature of the mask is stabilized before the step of attaching the vapor of the vapor deposition material to the substrate.

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