TW201712135A - Vacuum deposition apparatus and method for producing vapor deposited film and organic electronic device for inhibiting the heat deformation of the mask and producing a film with high accuracy pattern - Google Patents

Abstract

To provide a vacuum deposition apparatus capable of preventing the thermal deformation during the vapor deposition and to have a film formation with a desired pattern with high accuracy. A vacuum deposition apparatus is provided with an vapor deposition source (2) in the vapor deposition chamber (1) for performing vapor deposition on a substrate across a mask; a vapor deposition source moving mechanism that moves with respect to the substrate in a vapor deposition process, or a substrate moving mechanism that moves with respect to the vapor deposition source, thereby the vapor deposition source moving mechanism or the substrate moving mechanism can employ the vapor deposition source to perform the preheat of the mask before initiating a vapor deposition on the substrate.

Description

Vacuum vapor deposition device, method for producing vapor deposition film, and method for manufacturing organic electronic device

The present invention relates to a vacuum vapor deposition device, a method for producing a vapor deposition film, and a method for producing an organic electronic device.

In the vapor deposition device in which the film formation material evaporated from the evaporation source is deposited on the substrate via a mask having a predetermined mask pattern to form a film, the mask may be masked in the vapor deposition process. The film is heated from the evaporation source and thus thermally deformed, and the thermal deformation of the mask causes the position of the mask to deviate from the substrate, and the pattern of the film formed on the substrate deviates from the desired position. In particular, in the manufacture of an organic electronic device such as a display panel such as a mobile phone or a television, a mask having a high-definition pattern is used, so that the influence due to thermal deformation is large.

Therefore, as disclosed in, for example, Patent Document 1, although a mask made of an invar material of a low thermal expansion material has been proposed in order to suppress thermal deformation, it is difficult to make the coefficient of linear expansion even if a low thermal expansion material is used for the mask. 0, in this case, the thermal deformation is still a problem.

[Previous Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2004-323888

The present invention has been made in view of the above circumstances, and it is an object of the present invention to provide a vacuum vapor deposition apparatus capable of forming a film in a desired pattern with high precision by suppressing thermal deformation during vapor deposition of a mask.

The gist of the present invention will be described with reference to the accompanying drawings.

According to a first aspect of the present invention, in a vacuum vapor deposition apparatus, an evaporation source 2 for vapor-depositing a substrate via a mask is provided in the vapor deposition chamber 1, and the evaporation source 2 is formed during vapor deposition. An evaporation source moving mechanism that moves relative to the substrate or a substrate moving mechanism that moves the substrate relative to the evaporation source during vapor deposition, wherein the evaporation source moving mechanism or the substrate moving mechanism is configured to start Before the vapor deposition of the substrate, the pre-heating of the mask is performed by the evaporation source 2.

Further, a vacuum vapor deposition apparatus in which the heat generated from the evaporation source 2 is utilized in the preliminary heating before vapor deposition for stabilizing the deposition rate of the film formation material evaporated from the evaporation source 2 The pre-heating of the aforementioned mask is performed.

Further, a vacuum evaporation apparatus in which the evaporation source is (2) The shutter 7 is provided, and the pre-heating of the mask is performed by changing the relative positional relationship between the evaporation source and the mask in a state where the shutter 7 is closed.

Further, in a vacuum vapor deposition apparatus, the evaporation source moving mechanism is configured such that a position of a first vapor deposition substrate and a mask in the continuous vapor deposition is aligned with an advance heating of the mask. And proceed.

Further, a vacuum vapor deposition apparatus in which a plurality of vapor deposition regions 3 and 4 for vapor deposition of the substrate in the vapor deposition chamber 1 are juxtaposed in a direction orthogonal to a moving direction of the evaporation source, Each of the plurality of vapor deposition regions 3 and 4 is provided with a retreat region for retreating the evaporation source outside the vapor deposition region, and the evaporation source moving mechanism is configured to move the evaporation source 2 to the vapor deposition. The regions 3 and 4 are arranged in the same direction and move from one of the vapor deposition regions to the other vapor deposition region, and the evaporation source moving mechanism is configured to be disposed in each of the plurality of vapor deposition regions 3 When the mask of 4 is heated in advance, the mask placed in one of the vapor deposition regions is heated, and the evaporation source 2 is not evacuated to the evacuation regions 3 and 4 and moved to the vapor deposition region. Move the direction to the vapor deposition area of the other.

A second aspect of the present invention relates to a method for producing a vapor deposited film, comprising: a program for installing a substrate in a vapor deposition chamber; and a method of heating a film forming material stored in an evaporation source to stabilize a film formation speed, and a process of adhering the vapor of the vapor deposition material to the substrate via a mask, wherein the evaporation source and the substrate are used during a process of stabilizing the deposition rate The relative positional relationship changes, and the mask is heated by the heat of the evaporation source.

A third aspect of the present invention relates to a method of manufacturing an organic electronic device including a plurality of elements having an organic layer sandwiching a pair of electrodes on a substrate, the manufacturing method having a plurality of layers formed a procedure in which the substrate of the electrode is provided in the vapor deposition chamber, a procedure of aligning the substrate with a plurality of openings, and a method of heating the film forming material stored in the evaporation source to stabilize the film formation speed, And a method of forming at least a part of the organic layer by adhering vapor of the film forming material to the substrate via the mask, wherein the evaporation source and the substrate are opposed to each other during a process of stabilizing the film forming speed The positional relationship changes, and the mask is heated by the heat of the evaporation source.

According to the present invention, it is possible to suppress thermal deformation during vapor deposition of the mask and to form a film with a desired pattern with high precision.

1‧‧‧vaporation chamber

2‧‧‧ evaporation source

3, 4‧‧‧ evaporation area

7‧‧‧Shader

Fig. 1 is a schematic perspective view showing the present embodiment.

Fig. 2 is a plan view schematically showing the present embodiment.

Fig. 3 is a plan view schematically showing the present embodiment.

Fig. 4 is a plan view schematically showing the present embodiment.

Fig. 5 (a) is a perspective view of an organic EL display device produced by a vacuum vapor deposition device according to the present invention, and (b) is a cross section taken along line A-B of (a) Surface map.

Embodiments of the vacuum vapor deposition apparatus according to the present invention will be specifically described based on the drawings.

In a vacuum vapor deposition apparatus according to an embodiment of the present invention, an evaporation source (material storage portion) for vapor-depositing a substrate via a mask is provided in a vapor deposition chamber, and the evaporation source is opposed to the evaporation source during vapor deposition. An evaporation source moving mechanism that moves on the substrate. This evaporation source moving mechanism has a function of changing the relative positional relationship between the evaporation source and the substrate, and more specifically, the relative positional relationship between the evaporation source and the substrate in the plane direction parallel to the film formation surface of the substrate. Further, the evaporation source moving mechanism is configured to move the evaporation source relative to the mask before the vapor deposition of the vapor deposition chamber to maintain the vapor deposition state of the vapor deposition chamber, and to use the heat generated from the evaporation source. The aforementioned mask is heated in advance. In the present embodiment, the evaporation source is moved by the evaporation source moving mechanism to change the relative positional relationship between the evaporation source and the substrate. However, the substrate moving mechanism may be provided in the vapor deposition chamber, and the evaporation source and the substrate may be moved by moving the substrate. The relative positional relationship changes, and the relative positional relationship between the evaporation source and the substrate can be changed by moving both the substrate and the evaporation source. Therefore, the evaporation source moving mechanism and the substrate moving mechanism referred to herein may be referred to as a relative positional relationship changing mechanism between the evaporation source and the substrate.

In Figs. 1 and 2, an embodiment of a vacuum evaporation apparatus according to the present invention is shown. Figure 1 is a vapor deposition chamber in order to see the inside of the vacuum evaporation apparatus. A perspective view in which a part of the wall of 1 is removed, and Fig. 2 is a plan view seen from the upper surface side of the vapor deposition chamber 1. In the vapor deposition chamber 1, the vapor deposition regions 3 and 4 for vapor deposition on the substrate are placed in a plurality of directions in the direction orthogonal to the film formation moving direction (the vapor deposition region moving direction). Further, in each of the vapor deposition regions 3 and 4, a retreat region for retracting the evaporation source 2 is provided in addition to the vapor deposition regions 3 and 4.

Further, in each of the vapor deposition regions 3 and 4, a mask table (not shown) for holding the mask and the substrate is provided. The substrates carried in the respective carry-out ports 8 and 9 corresponding to the respective vapor deposition regions 3 and 4 are respectively aligned with the mask by the alignment mechanism provided in each of the vapor deposition regions 3 and 4, and then aligned. In a state of being overlapped and fixed to the mask, they are respectively placed on the mask table and held.

Further, the vapor deposition zone refers to a region where the film forming material evaporated from the evaporation source 2 adheres to the substrate.

In the present embodiment, in order to stabilize the deposition rate of the vapor deposition film formed by the vapor discharged from the evaporation source 2, the evaporation source moving mechanism is configured to be used in the preliminary heating before the vapor deposition starts. From the heat generated by the evaporation source 2, the aforementioned heating of the mask is performed. Specifically, before the vapor deposition starts, any one of the longitudinal direction and the width direction of the substrate is used as a film formation moving direction, and the evaporation source 2 is reciprocated in the vapor deposition regions 3 and 4 in the film formation moving direction. And the hot test run. This movement does not have to be a reciprocating motion, and it is also possible to perform a circular motion or the like. In addition, as long as the fluctuation of the film formation speed is suppressed compared to the case where the preheating is not performed, the preliminary heating is performed in order to stabilize the film formation speed. Preheating, preferably forming a film forming speed The changes will fall within the predetermined range. In spite of this, it is not necessary to perform verification every time the film is formed, and it is not necessary to determine the preliminary heating time by a preliminary experiment or the like.

In order to stabilize the molten state of the film forming material, the degassing, the film forming rate, and the like of the film forming material accommodated in the evaporation source 2 are stabilized, for example, when the evaporation source 2 is heated up to the time of film formation. The heating temperature is heated at the same temperature for several minutes. Further, the evaporation source 2 of the present embodiment is constituted by three line sources as shown in Fig. 2 .

Further, during the preheating of the evaporation source 2, the position of the substrate to be vapor-deposited and the mask may be aligned in parallel.

In other words, it is preferable to perform pre-heating of the mask by the alignment between the substrate and the mask and the vapor deposition preparation period such as the prior heating of the evaporation source 2.

To further shorten the time required until the film formation starts, it is preferable to set the preliminary heating temperature of the evaporation source 2 and the moving speed of the evaporation source 2 that has passed through the evaporation source moving mechanism to end the alignment of the substrate and the mask. The point in time causes the mask to heat up beforehand. Thereby, it is possible to reduce the standby time for the pre-heating of the mask, and to perform the pre-heating of the mask by the vapor deposition preparation period, thereby preventing the mask from being thermally deformed in the vapor deposition due to the heat generated from the evaporation source 2. . Further, the heat source for the pre-heating is the evaporation source 2, and it is not necessary to prepare another heat source, and the heat generated during the warm-up of the evaporation source 2 is utilized, so that the preheating can be performed efficiently.

Further, in the prior art, the preheating of the evaporation source is performed by disposing the vapor deposition source in the retracting region (the region where the vapor deposition material does not adhere to the substrate), so that the preheating of the evaporation source does not contribute to the mask. Preheat.

Preferably, as shown in FIG. 1, the shutter 7 is provided in the evaporation source 2, and the mask is moved back and forth with respect to the mask in a state where the shutter 7 is closed, and the pre-heating of the mask is performed. Specifically, the shutter 7 is slidably and slidably disposed above the evaporation source 2 . Further, in the case where the shutter 7 is provided, the shutter 7 is still heated by the evaporation source 2, and the mask is heated by the heated shutter 7. As shown in this example, a configuration in which the evaporation source is heated while changing the relative position of the evaporation source and the substrate while the shutter of the evaporation source is turned off is a suitable embodiment of the present invention. With such a configuration, it is possible to efficiently heat the mask in advance in a state where an evaporation source is present directly under the substrate, and it is also possible to prevent the film from adhering to the substrate in the pre-heating stage. Further, the shutter can shield the vapor discharged from the evaporation source so as not to adhere to the substrate, and is not necessarily provided in the evaporation source.

Further, in the present embodiment, the evaporation source moving mechanism is configured such that the evaporation source 2 can be moved in the same direction (the vapor deposition region moving direction) as the direction in which the vapor deposition regions 3 and 4 are arranged. One of the vapor deposition zones 3 moves to the other vapor deposition zone 4.

Specifically, in the present embodiment, the guide rail 10 extending in the moving direction of the vapor deposition region is provided on the bottom surface of the vapor deposition chamber 1, and a frame-shaped vapor deposition region moving slider that can slide back and forth with respect to the guide rail 10 is provided. 6. Further, a guide rail 11 extending in the film formation moving direction is provided on the upper surface of the vapor deposition region moving slider 6, and a film formation moving slider 5 slidable relative to the guide rail 11 is provided, and is provided here. The film formation moving slider 5 has a configuration in which the evaporation source 2 and the shutter 7 are provided. Furthermore, at the bottom of the film forming moving slider 5 The arm member 12 for moving the film formation moving slider 5 is connected to the surface. Further, a control device that drives the arm member 12 to move the film formation moving slider 5 (evaporation source 2) in the film formation moving direction or the vapor deposition region moving direction is provided outside the vapor deposition chamber 1 to constitute an evaporation device. Source mobile agency.

Therefore, one evaporation source 2 can be moved back and forth in the film formation moving direction in one of the evaporation sources 2 to be heated in advance or formed, and then moved in the vapor deposition region moving direction to the other vapor deposition region. 4 Perform the heating or film formation in advance.

Further, in the present embodiment, the evaporation source moving mechanism is configured such that when the masks disposed in the plurality of vapor deposition regions 3 and 4 are heated in advance, the evaporation source 2 is not evacuated to the evacuation region. The direction in which the vapor deposition regions 3 and 4 are arranged is moved downward, and the vapor deposition region 3 of one of them is moved to the vapor deposition region 4 of the other.

In FIG. 3, the trajectory of the vapor deposition source 2 after the vapor deposition of the substrate is shown in bold lines. When the substrate of the vapor deposition region 3 provided in one of the layers is formed, the evaporation source 2 is passed through the vapor deposition region 3 from one of the two evacuation regions provided between the vapor deposition regions 3 The manner of the retreat area until the other is moved back and forth in the direction in which the guide rail 10 extends. When the substrate of the vapor deposition region 4 provided in the other is formed after the deposition of the substrate provided in the vapor deposition region 3, the evaporation source 2 located in the evacuation region outside the vapor deposition region 3 is moved. The evaporation zone is moved in the direction until it reaches the evacuation zone outside the vapor deposition zone 4. Further, the evaporation source 2 is repeatedly passed through the evaporation zone 4 to the evacuation zone of the other one of the two evacuation regions provided between the vapor deposition regions 4 The manner of the domain is moved back and forth in the direction in which the guide rail 10 extends for a predetermined number of times. Thus, the substrates provided in the respective vapor deposition regions 3 and 4 can be formed into films.

On the other hand, the trajectory of the vapor deposition source 2 at the time of the pre-heating of the mask before the vapor deposition is started is shown by the thick line in FIG. When the mask of the vapor deposition zone 3 provided in one of them is heated in advance, as shown in FIG. 4, the evaporation source 2 is moved back and forth along the guide rail 11 in the vapor deposition zone 3 by a predetermined number of times. Move direction. Then, when the mask provided in the other vapor deposition zone is heated in advance, the vapor deposition source 2 is not moved to the evacuation region outside the vapor deposition zone 3, and is applied from the end of the vapor deposition zone 3 Moves in the direction in which the vapor deposition zone moves until it reaches the corresponding end of the vapor deposition zone 4 of the other. Then, the evaporation source 2 is repeatedly heated in the vapor deposition zone 4 by a predetermined number of times to and from the film formation moving direction, and the mask provided in the vapor deposition zone 4 is heated in advance. In this manner, the mask can be heated in advance until the masks provided in the vapor deposition regions 3 and 4 are thermally saturated.

When the mask is heated in advance, unlike the case of vapor deposition, it is created that the evaporation source 2 is not moved to the evacuation region, so that the mask is heated more efficiently beforehand.

As described above, in the present embodiment, when vapor deposition is performed, the masks of the respective vapor deposition regions are heated in advance before being vapor-deposited, and after being thermally saturated, they are sequentially disposed in the respective vapor deposition regions 3 and 4. The substrate was continuously vapor-deposited. By forming the film in this manner, the thermal deformation of the mask during vapor deposition is suppressed, and the pattern of the thin film formed on the substrate during vapor deposition is not easily changed, and stable and highly accurate film formation can be performed.

The inside of the vapor deposition chamber 1 is maintained in a vacuum state so that the masks are maintained in a state of thermal saturation after the masks are heated in advance before the vapor deposition is started. Therefore, it is possible to perform stable and highly accurate film formation by continuously performing vapor deposition of a plurality of substrates.

Further, the present invention is not limited to the embodiment and the like, and the specific configuration of each constituent element can be appropriately designed.

Next, an embodiment of an organic EL display device which is an example of an organic electronic device manufactured by the vacuum vapor deposition device according to the present invention will be described.

First, an organic EL display device to be manufactured will be described. Fig. 5(a) is an overall view of the organic EL display device 40, and Fig. 5(b) shows a cross-sectional structure of one pixel.

As shown in FIG. 5(a), a plurality of pixels 42 having a plurality of light-emitting elements are arranged in a matrix in the display region 41 of the display device 40. Each of the light-emitting elements has a structure including an organic layer sandwiched between a pair of electrodes, and the details will be described later. In addition, the term "pixel" as used herein refers to a minimum unit that makes display of a desired color possible in the display area 41. In the case of the display device according to the present embodiment, the pixels 42 are configured by transmitting a combination of the first light-emitting elements 42R, the second light-emitting elements 42G, and the third light-emitting elements 42B that emit light that are different from each other. The pixel 42 is mainly composed of a combination of a red light-emitting element, a green light-emitting element, and a blue light-emitting element. However, a combination of a yellow light-emitting element, a cyan light-emitting element, and a white light-emitting element may be used as long as it is at least one color or more. Limiter.

Fig. 5(b) is a partial cross-sectional view taken along line A-B of Fig. 5(a). The pixel 42 is provided on the substrate 43 and has a first electrode (yang) The organic EL element of the electrode 44, the hole transport layer 45, the light-emitting layers 46R, 46G, and 46B, the electron transport layer 47, and the second electrode (cathode) 48. Among these, the hole transport layer 45, the light-emitting layers 46R, 46G, and 46B, and the electron transport layer 47 correspond to an organic layer. Further, in the present embodiment, the light-emitting layer 46R emits a red organic EL layer, the light-emitting layer 46G emits a green organic EL layer, and the light-emitting layer 46B emits a blue organic EL layer. The light-emitting layers 46R, 46G, and 46B are respectively formed in a pattern corresponding to a light-emitting element that emits red, green, and blue (may also be described as an organic EL element). Further, the first electrode 44 is formed by separating the light-emitting elements. The hole transport layer 45, the electron transport layer 47, and the second electrode 48 may be formed in common with a plurality of light-emitting elements 42 or may be formed as light-emitting elements. Further, in order to prevent the first electrode 44 and the second electrode 48 from being short-circuited by foreign matter, the insulating layer 49 is provided between the first electrodes 44. In addition, since the organic EL layer is deteriorated by moisture, oxygen, or the like, the protective layer 50 for protecting the organic EL element from moisture, oxygen, or the like is provided.

In order to form the organic EL layer in units of light-emitting elements, a method of forming a film through a mask is employed. In recent years, high definition of display devices has progressed, and in the formation of an organic EL layer, a mask having an opening width of several tens of μm has been used. In the case of film formation using such a mask, the position of the mask and the substrate may be deviated when the mask is thermally deformed from the evaporation source during film formation, and the pattern of the film formed on the substrate may deviate from the desired position. And formed. Therefore, in the film formation of these organic EL layers, the vacuum vapor deposition apparatus according to the present invention is suitably employed.

Next, a method of manufacturing an organic EL display device will be specifically described. example.

First, a substrate 43 on which a circuit (not shown) for driving an organic EL display device and the first electrode 44 are formed is prepared.

An acrylic resin is formed by spin coating on the substrate 43 on which the first electrode 44 is formed, and the acrylic resin is subjected to photolithography to form an opening formed in a portion where the first electrode 44 is formed to form an insulating layer 49. This opening corresponds to a light-emitting region in which the light-emitting element actually emits light.

The substrate 43 in which the insulating layer 49 is patterned is carried into a vacuum vapor deposition apparatus, and the hole transport layer 45 is formed into a layer which is common to the first electrode 44 in the display region. The hole transport layer 45 is formed into a film by vacuum evaporation. Actually, the hole transport layer 45 is formed to have a larger size than the display region 41, so that a high-definition mask is not required.

Next, using a vapor deposition mask, a red light-emitting layer 46R is formed in a portion where the red-emitting element is disposed. First, the substrate 43 on which the hole transport layer 45 is formed is carried into the vapor deposition region 3 of the vacuum vapor deposition apparatus of FIG. 1 to be aligned with the mask having the opening corresponding to the region in which the first light-emitting element 42R is formed. (alignment).

In the case where the mask to be used is not thermally saturated, there is a case where the mask is thermally deformed from the evaporation source in the film formation and thermally deformed so that the position of the mask and the substrate is deviated, and the light-emitting layer 46R cannot be formed at a desired position. Hey. Therefore, before the vapor deposition of the substrate 43 is started, it is preferable to perform the prior heating by the heat of the vapor deposition source 2 until the mask is thermally saturated. Whether the temperature of the mask is stable or not, and whether or not the temperature of the mask which is raised by the heat of the vapor deposition source 2 is determined to fall within a predetermined range. can. The established range can be determined according to the precision required for film formation.

On the other hand, in the vapor deposition source 2, an organic EL material which is a material of the light-emitting layer 46R is housed, and preheating is performed in preparation for evaporating the organic material and adhering it to the substrate. In order to stabilize the molten state of the film-forming material accommodated in the evaporation source 2, the preheating is performed by heating the evaporation source 2 at a temperature similar to the heating temperature at the time of film formation. Whether or not the molten state of the film forming material is stable may be determined by a temporal change in the film forming speed (vapor deposition rate) obtained by using a film thickness monitor (not shown). When the molten state of the film forming material is stable, the amount of vapor of the film forming material discharged from the evaporation source 2 is stabilized, so that the variation of the film forming speed falls within a predetermined range.

In this example, the pre-heating of the mask is performed by the heat generated by the preheating of the evaporation source 2 and the time required for the preheating. Specifically, in a state where the shutter 7 is closed so that the vapor does not adhere to the substrate, the vapor deposition source 2 is reciprocated in the vapor deposition region to heat the mask. When the temperature of the mask is stabilized during the period before the completion of the preheating, the preheating of the vapor deposition source 2 is completed and the film formation is possible. In order to start film formation at the same time as the end of the preheating of the vapor deposition source 2, it is more efficient to perform the positional alignment of the substrate and the mask during the pre-heating of the mask. Further, when the temperature of the mask is not stabilized at the end of the preheating, the mask is continuously heated by the vapor deposition source 2 until the temperature of the mask is stabilized.

The mask was thermally stable, and after the alignment of the substrate and the mask was completed, the vapor deposition source 2 was moved to one of the two evacuation regions provided in the vapor deposition region 3 in the direction in which the guide rail 10 extends. After that, the shutter 7 is turned on. The evacuation region toward the other starts the movement of the vapor deposition source 2 to start vapor deposition, and reciprocates between the two evacuation regions to form the light-emitting layer 46R.

As described above, according to the present embodiment, since the mask is not deformed during the formation of the light-emitting layer 46R, the light-emitting layer 46R can be formed on the substrate in a predetermined pattern. Furthermore, not only does it require additional heating equipment, but it does not require time-consuming heating just for the mask. In other words, the preheating of the evaporation source 2 is performed, and the heat generated during the preliminary heating, the standby time for warming up, and the like are used, and the pre-heating of the mask is performed extremely efficiently.

Next, as the film formation of the light-emitting layer 46R, a green light-emitting layer 46G is formed by using a mask having an opening corresponding to the region in which the second light-emitting element 42G is formed. Next, a blue light-emitting layer 46B is formed by using a mask having an opening corresponding to a region where the third light-emitting element 42B is formed. When the light-emitting layers 46G and 46B are respectively formed, the vapor deposition source 2 is moved relative to the mask as before the film formation of the light-emitting layer 46R, and it is confirmed that the mask is thermally saturated and film formation is started.

The mask that is once used for film formation of each of the light-emitting layers 46R, 46G, and 46B is placed in the vacuum vapor deposition chamber until the next substrate is placed. Therefore, the heat of the mask is maintained by the vacuum, so that the thermal saturation state of the mask is maintained. Therefore, it becomes possible to omit the prior heating of the mask before the film formation is started for the next substrate. When the mask is placed in contact with the substrate, the heat of the mask leaks to the substrate, the temperature of the mask is lowered, and the film formation rate of the vapor deposition film is changed. Before the vapor deposition, the mask may be heated in advance by the heat from the vapor deposition source 2 in advance.

After the film formation of the light-emitting layers 46G and 46B is completed, the electron transport layer 47 is formed on the entire display region 41. The electron transport layer 47 is formed as a layer common to the first to third light-emitting layers.

The substrate formed until the electron transport layer 47 is moved to a sputtering apparatus, the second electrode 48 is formed into a film, and then moved to a plasma CVD apparatus to form a protective layer 50, thereby completing the organic EL display device 40.

When the substrate 43 in which the insulating layer 49 is patterned is carried into the vacuum vapor deposition apparatus until the film formation of the protective layer 50 is completed, when it is exposed to an environment containing moisture, oxygen, or the like, the light-emitting layer formed of the organic EL material is contaminated with moisture. Deterioration of oxygen and the like. Therefore, in this example, the loading and unloading of the substrate between the film forming apparatuses is performed in a vacuum environment or an inert gas atmosphere.

In the above example, when the light-emitting layer is formed, the mask is heated in advance, but when the other layer is formed, the mask may be heated beforehand.

The organic EL display device thus obtained is capable of forming a light-emitting layer with high precision in accordance with a light-emitting element. Therefore, when the above-described production method is used, occurrence of defects in the organic EL display device due to the positional deviation of the light-emitting layer can be suppressed.

In addition, although the manufacturing method of the organic EL display device is described here, it is not limited to this, and all the manufacturing methods of the organic electronic device which use the mask to form the pattern of the organic layer at the time of vapor deposition are equally applicable. this invention. Further, the present invention is not limited to the organic film, and the present invention can be applied similarly to the formation of the inorganic film.

1‧‧‧vaporation chamber

2‧‧‧ evaporation source

3, 4‧‧‧ evaporation area

5‧‧‧ Film-forming moving slider

6‧‧‧Steaming area moving slider

7‧‧‧Shader

8, 9‧‧‧ moving out of the entrance

10‧‧‧rails

11‧‧‧ Guide rail

12‧‧‧arm members

Claims (12)

A vacuum vapor deposition apparatus in which an evaporation source for vapor-depositing a substrate via a mask and an evaporation source moving mechanism for moving the evaporation source relative to the substrate during vapor deposition are provided or The substrate moving mechanism that moves the substrate relative to the evaporation source during vapor deposition is characterized in that the evaporation source moving mechanism or the substrate moving mechanism is configured to use the evaporation source before starting vapor deposition on the substrate The pre-heating of the aforementioned mask is performed. The vacuum vapor deposition apparatus of the first aspect of the invention, wherein the pre-evaporation preheating for stabilizing the deposition rate of the film-forming material evaporated from the evaporation source is used in the pre-evaporation source The pre-heating of the aforementioned mask is performed by heat. The vacuum vapor deposition device according to claim 1, wherein a shutter is provided in the evaporation source, and a relative positional relationship between the evaporation source and the mask is changed in a state in which the shutter is closed. The pre-heating of the aforementioned mask is performed. The vacuum vapor deposition apparatus according to claim 1, wherein the evaporation source moving mechanism or the substrate moving mechanism is configured such that a position of the vapor deposition substrate and the mask are aligned with each other before the mask Heating is performed in parallel. The vacuum vapor deposition device according to any one of claims 1 to 4, wherein a plurality of vapor deposition apparatuses are disposed in a direction orthogonal to a moving direction of the evaporation source, and the substrate is vapor-deposited in the vapor deposition chamber. The evaporation zone used, Each of the plurality of vapor deposition regions is provided with a retreat region for retracting the evaporation source outside the vapor deposition region, and the evaporation source moving mechanism is configured to move the evaporation source to the vapor deposition region The vapor deposition region of one of the vapor deposition regions is moved to the other vapor deposition region in the same direction, and the evaporation source moving mechanism is configured to heat the masks disposed in the plurality of vapor deposition regions beforehand. After the mask disposed in one of the vapor deposition regions is heated, the evaporation source is moved to the vapor deposition region in the direction in which the vapor deposition region is moved without being evacuated to the evacuation region. A vacuum vapor deposition apparatus in which an evaporation source for vapor-depositing a substrate via a mask is provided in the vapor deposition chamber, and any one of a longitudinal direction and a width direction of the substrate is formed during vapor deposition. In the film moving direction, the evaporation source is reciprocated in the film formation moving direction, and the evaporation source moving mechanism is configured to continuously vapor-deposit a plurality of the substrates while maintaining a vacuum state of the vapor deposition chamber. Before the continuous vapor deposition, the evaporation source is moved relative to the mask to perform pre-heating of the mask. A method for producing a vapor deposited film, comprising: a step of installing a substrate in a vapor deposition chamber; a method of heating a film forming material stored in the evaporation source to stabilize a film formation speed; and steaming the mask through a mask The vapor of the plating material adheres to the substrate In the process of stabilizing the deposition rate, the relative positional relationship between the evaporation source and the substrate is changed, and the mask is heated by the heat of the evaporation source. The method for producing a vapor deposited film according to claim 7, wherein the vapor of the vapor deposition material is shielded from being adhered to the substrate while the mask is heated by the heat of the evaporation source. The method for producing a vapor deposited film according to the eighth aspect of the invention, wherein the mask is heated until the temperature of the mask is stabilized before the process of adhering the vapor of the film forming material to the substrate. A method of manufacturing an organic electronic device comprising: a plurality of elements having an organic layer sandwiching a pair of electrodes on a substrate, wherein the substrate is formed by depositing a substrate on which a plurality of electrodes are formed a program for a chamber; a mask having a plurality of openings; a procedure for positioning the substrate; a method of heating a film forming material stored in the evaporation source to stabilize a film formation speed; and a mask interposed therebetween a process in which the vapor of the film formation material adheres to the substrate to form at least a part of the organic layer; wherein a relative positional relationship between the evaporation source and the substrate is changed during a process of stabilizing the deposition rate The mask is heated by the heat of the evaporation source. The method of manufacturing an organic electronic device according to claim 10, wherein the vapor of the vapor deposition material is shielded from being adhered to the substrate while the mask is heated by the heat of the evaporation source. The method of manufacturing an organic electronic device according to claim 11, wherein the mask is heated until the temperature of the mask is stabilized before the process of adhering the vapor of the vapor deposition material to the substrate.