JP7431088B2 - Film forming apparatus, film forming method, and electronic device manufacturing method - Google Patents

Description

The present invention relates to a film forming apparatus, an electronic device manufacturing apparatus, a film forming method, and an electronic device manufacturing method.

In recent years, organic EL display devices (organic EL displays) have been in the spotlight as flat panel display devices. Organic EL display devices are self-luminous displays that have better characteristics than liquid crystal displays, such as response speed, viewing angle, and thinner profile. It has become popular instead. The field of application is also expanding to automotive displays.

An organic EL element (OLED: Organic Light Emitting Diode) that constitutes an organic EL display device has a function of having a light-emitting layer, which is an organic material layer that generates light emission, between two opposing electrodes (cathode electrode, anode electrode). It has a basic structure of layers. The functional layer and the electrode layer of an organic EL element can be manufactured, for example, by depositing materials constituting each layer onto a substrate through a mask in a vacuum deposition apparatus.

An organic EL element is manufactured by sequentially transporting the substrate to each film forming chamber and sequentially forming electrodes and various functional layers on the surface to be processed of the substrate. Patent Document 1 describes a manufacturing apparatus having a structure in which a plurality of cluster units are connected, each unit is provided with a plurality of film forming chambers and an inspection chamber, and a substrate formed with a film in a certain film forming chamber is transported to the inspection room. A configuration for measuring film thickness is disclosed. Further, a configuration is disclosed in which a light emission characteristic simulation is performed using the film thickness measurement results, and a chromaticity correction layer is formed in the same film forming chamber or another film forming chamber based on the simulation results.

Japanese Patent Application Publication No. 2005-322612

In the configuration of Patent Document 1, since the inspection chamber is provided in the cluster type unit, it is necessary to carry the substrates into and out of the inspection chamber using a substrate transfer robot placed in the center of the unit. In this case, the substrate transfer robot will be used only for inspection in the inspection room, which will increase the utilization rate of the substrate transfer robot and increase maintenance costs compared to the case where there is no inspection room in the cluster unit. There is a problem with this. Additionally, in order to provide an inspection room, one of the chambers that can be used for film deposition will be occupied for inspection, so the number of layers that can be deposited in one unit will be reduced (compared to when there is no inspection room). It becomes less. As a result, for example, a product that could conventionally be manufactured with three units may now require four or more units. This disadvantage is undesirable because it not only reduces throughput due to an increase in the number of man-hours required for delivery between units, but also increases the size of the entire manufacturing apparatus (increases the installation area).

The present invention has been made in view of the above circumstances, and aims to provide a technology for realizing highly accurate film thickness control and high productivity in a film forming apparatus having a structure in which a plurality of cluster units are connected. purpose.

This disclosure:
A cluster-type device having a first transport means and a plurality of film forming chambers including a first film forming chamber disposed around the first transport means and forming a first film on a substrate. a first unit;
A plurality of film forming chambers including a second transport means and a second film forming chamber disposed around the second transport means and forming a second film overlapping the first film on the substrate. a cluster-type second unit having a chamber;
a connection chamber arranged on the substrate transport path from the first unit to the second unit and connecting two cluster-type units;
a first measurement unit that is at least partially provided in the connection chamber and that measures the thickness of the first film formed on the substrate;
A film forming apparatus comprising: a control unit that controls film forming conditions in the first film forming chamber based on the thickness of the first film measured by the first measuring unit,
The connection chamber is
position acquisition means for acquiring information on the position of a substrate placed inside the connection chamber in the connection chamber;
a moving means for moving the substrate within the connection chamber based on the position information acquired by the position acquisition means;
The moving means moves the substrate to a measurement position based on the position information,
The first measuring unit is configured to measure the first film deposited on the substrate moved by the moving means to the measurement position based on the position information after the substrate is moved by the moving means . It includes a film forming apparatus characterized by measuring the thickness of a film.

According to the present invention, highly accurate film thickness control and high productivity can be achieved in a film forming apparatus having a structure in which a plurality of cluster units are connected.

FIG. 1 is a plan view schematically showing the configuration of a part of an electronic device manufacturing apparatus. FIG. 2 is a diagram schematically showing the configuration of a vacuum evaporation apparatus provided in a film forming chamber. FIG. 3 is a sectional view schematically showing the configuration of the pass chamber. FIG. 4 is a diagram showing alignment marks and film thickness measurement patches on the substrate. FIG. 5 is a block diagram schematically showing the configuration of the film thickness measuring section. FIG. 6 is a block diagram schematically showing the configuration of the film thickness control system. FIG. 7(a) is an overall view of an organic EL display device, FIG. 7(b) is a view showing a cross-sectional structure of one pixel, and FIG. 7(c) is an enlarged view of a red layer. FIG. 8 is a diagram schematically showing the lamination process of the example. FIG. 9 is a time chart of a comparative example. FIG. 10 is a time chart of the embodiment.

Hereinafter, preferred embodiments and examples of the present invention will be described with reference to the drawings. However, the following embodiments and examples merely illustrate preferred configurations of the present invention, and the scope of the present invention is not limited to these configurations. Furthermore, in the following description, the scope of the present invention is limited to the hardware configuration, software configuration, processing flow, manufacturing conditions, dimensions, materials, shape, etc. of the device, unless otherwise specified. It's not the purpose.

The present invention can be applied to an apparatus that performs film formation by depositing various materials on the surface of a substrate while sequentially transporting the substrate to a plurality of film formation chambers. ) can be desirably applied to an apparatus for forming. Any material such as glass, polymer film, metal, etc. can be selected as the material of the substrate, and the substrate may be, for example, a substrate in which a film such as polyimide is laminated on a glass substrate. . Note that when a plurality of layers are formed on a substrate, the term "substrate" includes the layers that have already been formed up to the previous step. Further, as the vapor deposition material, any material such as an organic material or a metallic material (metal, metal oxide, etc.) may be selected. In addition to the vacuum deposition apparatus described in the following description, the present invention can also be applied to a film forming apparatus having a sputtering apparatus or a CVD (Chemical Vapor Deposition) apparatus. Specifically, the technology of the present invention is applicable to manufacturing equipment for organic electronic devices (eg, organic EL elements, thin film solar cells, organic photoelectric conversion elements), optical members, and the like. In particular, an organic electronic device manufacturing apparatus that forms an organic EL element or an organic photoelectric conversion element by evaporating a deposition material and depositing it on a substrate through a mask in which an opening pattern corresponding to a pixel or subpixel is formed, This is one of the preferred application examples of the present invention. Among these, an organic EL element manufacturing apparatus is one particularly preferred example of application of the present invention.

<Electronic device manufacturing equipment>
FIG. 1 is a plan view schematically showing the configuration of a part of an electronic device manufacturing apparatus.

The electronic device manufacturing apparatus shown in FIG. 1 is used, for example, to manufacture a display panel of an organic EL display device for a smartphone. In the case of display panels for smartphones, for example, 4.5th generation substrates (about 700mm x about 900mm), 6th generation full size (about 1500mm x about 1850mm) or half-cut size (about 1500mm x about 925mm) substrates are used. After forming a film for forming an organic EL element, the substrate is cut out to produce a plurality of small-sized panels.

The electronic device manufacturing apparatus has a structure in which a plurality of cluster units (hereinafter also simply referred to as "units") CU1 to CU3 are connected via a connecting chamber. The cluster type unit refers to a film forming unit having a configuration in which a plurality of film forming chambers are arranged around a substrate transport robot serving as a substrate transport means. Note that the number of units is not limited to three, but may be two or more. Hereinafter, in explanations that are common to all units and in explanations that do not specify a unit, a reference sign written with an "x" instead of a number, such as "CUx", will be used, and in explanations about individual units, "CU1" will be used. (The same applies to reference symbols attached to components other than units). FIG. 1 shows a part of a film forming apparatus in the entire electronic device manufacturing apparatus. Upstream of the film forming apparatus, for example, a stocker for substrates, a heating apparatus, pre-processing equipment such as cleaning, etc. may be provided, and downstream of the film forming apparatus, for example, a sealing apparatus, processing apparatus, processed substrates, etc. may be provided. A substrate stocker or the like may be provided, and the entire electronic device manufacturing apparatus is configured.

The cluster type unit CUx has a central transfer chamber TRx, and a plurality of film forming chambers EVx1 to EVx4 and mask chambers MSx1 to MSx2 arranged around the transfer chamber TRx. Two adjacent units CUx and CUx+1 are connected by a connecting chamber CNx. The chambers TRx, EVx1 to EVx4, MSx1 to MSx2, and the connecting chamber CNx in the cluster unit CUx are spatially connected, and the inside thereof is maintained in a vacuum or an inert gas atmosphere such as nitrogen gas. In this embodiment, each chamber constituting the unit CUx and the connection chamber CNx is connected to a vacuum pump (evacuation means) not shown, and can be evacuated independently. Each chamber is also referred to as a "vacuum chamber" or simply a "chamber." Note that in this specification, "vacuum" refers to a state filled with gas at a pressure lower than atmospheric pressure.

The transport chamber TRx is provided with a transport robot RRx as a transport means for transporting the substrate S and the mask M. The transfer robot RRx is, for example, a multi-joint robot having a structure in which a robot hand that holds the substrate S and the mask M is attached to a multi-joint arm. In the cluster unit CUx, the substrate S is transported by a transport means such as a transport robot RRx or a transport robot RCx to be described later while maintaining a horizontal state with the surface to be processed (film-forming surface) of the substrate S facing downward in the direction of gravity. transported. The robot hand of the transfer robot RRx or the transfer robot RCx has a holding part so as to hold the peripheral area of the surface to be processed of the substrate S. The transport robot RRx transports the substrate S between the pass chamber PSx-1 on the upstream side, the film forming chambers EVx1 to EVx4, and the buffer chamber BCx on the downstream side. Further, the transport robot RRx transports the mask M between the mask chamber MSx1 and the film forming chambers EVx1 and EVx2, and between the mask chamber MSx2 and the film forming chambers EVx3 and EVx4. The robot hands of the transfer robot RRx and the transfer robot RCx are each configured to perform predetermined movements according to a predetermined program stored in the transfer control unit. The movements of each robot are set so that multiple substrates can be efficiently transported when depositing films on multiple substrates in multiple deposition chambers and multiple units sequentially or simultaneously. Ru. Note that the position of the substrate on the transport path may deviate from the ideal transport position due to, for example, errors in the movement of the robot hand due to changes in the degree of bending of the arm. In order to fine-tune the movement of the robot hand, the program that determines the movement of the robot hand is modified as necessary.

The mask chambers MSx1 to MSx2 are chambers provided with mask stockers that accommodate masks M used for film formation and used masks M, respectively. Masks M used in the film formation chambers EVx1 and EVx3 are stocked in the mask chamber MSx1, and masks M used in the film formation chambers EVx2 and EVx4 are stocked in the mask chamber MSx2. As the mask M, a metal mask in which a large number of openings are formed is preferably used.

The film forming chambers EVx1 to EVx4 are chambers for forming a material layer on the surface of the substrate S. Here, the film forming chambers EVx1 and EVx3 are chambers that have the same function (chambers that can perform the same film forming process), and similarly, the film forming chambers EVx2 and EVx4 are also chambers that have the same function. With this configuration, the film forming process along the first route from the film forming chamber EVx1 to EVx2 and the film forming process along the second route from the film forming chamber EVx3 to EVx4 can be performed in parallel.

The connection chamber CNx has a function of connecting the unit CUx and the unit CUx+1 and delivering the substrate S formed into a film in the unit CUx to the subsequent unit CUx+1. The connection chamber CNx of this embodiment is composed of, in order from the upstream side, a buffer chamber BCx, a swirling chamber TCx, and a pass chamber PSx. As will be described later, such a configuration of the connection chamber CNx is a preferable configuration from the viewpoint of increasing productivity of the film forming apparatus and improving usability. However, the configuration of the connection chamber CNx is not limited to this, and the connection chamber CNx may be configured only by the buffer chamber BCx or the pass chamber PSx.

The buffer chamber BCx is a chamber for transferring the substrate S between the transfer robot RRx in the unit CUx and the transfer robot RCx in the connection chamber CNx. The buffer chamber BCx is used to store multiple substrates S when there is a difference in processing speed between the unit CUx and the subsequent unit CUx+1, or when the substrates S cannot be fed normally due to a problem on the downstream side. By temporarily accommodating it, it has the function of adjusting the loading speed and timing of the substrate S. By providing the buffer chamber BCx having such a function in the connection chamber CNx, it is possible to achieve high productivity and high flexibility that can accommodate laminated film formation with various layer configurations. For example, in the buffer chamber BCx, there are substrate storage shelves (also called cassettes) with a multi-tiered structure that can store a plurality of substrates S while maintaining a horizontal state with the processed surface of the substrate S facing downward in the direction of gravity, and a substrate storage shelf (also called a cassette). An elevating mechanism is provided for elevating and lowering the substrate storage shelf in order to align the stage for carrying in or ejecting S with the transport position.

The turning chamber TCx is a chamber for rotating the direction of the substrate S by 180 degrees. A transfer robot RCx that transfers the substrate S from the buffer chamber BCx to the pass chamber PSx is provided in the turning chamber TCx. When the upstream end of the substrate S is called the "rear end" and the downstream end is called the "front end", the transfer robot RCx rotates 180 degrees while supporting the substrate S received in the buffer chamber BCx. By delivering the substrate S to the pass chamber PSx, the front end and rear end of the substrate S are exchanged between the buffer chamber BCx and the pass chamber PSx. As a result, the direction when carrying the substrate S into the film forming chamber is the same for the upstream unit CUx and the downstream unit CUx+1, so the scan direction for film forming and the direction of the mask M with respect to the substrate S are changed. It can be matched in each unit CUx. With such a configuration, the directions in which the masks M are installed in the mask chambers MSx1 to MSx2 in each unit CUx can be aligned, and the management of the masks M can be simplified and usability can be improved.

The pass chamber PSx is a chamber for transferring the substrate S between the transfer robot RCx in the connection chamber CNx and the transfer robot RRx+1 in the downstream unit CUx+1. In this embodiment, alignment of the substrate S and measurement of the film thickness of the film formed on the substrate S are performed in the pass chamber PSx. In this way, by arranging the alignment mechanism and the film thickness measurement section in the same chamber and measuring the film thickness after performing alignment, it is possible to improve the positional accuracy of the film thickness measurement location within the substrate. This makes it possible to keep the film thickness measurement location within the substrate constant for each substrate, making it possible to evaluate film thickness with high accuracy.

Openable and closable doors (for example, door valves or gate valves) are provided between the film forming chambers EVx1 to EVx4, the mask chambers MSx1 to MSx2, the transfer chamber TRx, the buffer chamber BCx, the rotation chamber TCx, and the pass chamber PSx. It may also be a structure that is always open.

<Vacuum deposition equipment>
FIG. 2 schematically shows the configuration of a vacuum evaporation apparatus 200 provided in the film forming chambers EVx1 to EVx4.

The vacuum evaporation apparatus 200 includes a mask holder 201 that holds a mask M, a substrate holder 202 that holds a substrate S, an evaporation source unit 203, a movement mechanism 204, a deposition rate monitor 205, and a deposition control section 206. The mask holder 201 , the substrate holder 202 , the evaporation source unit 203 , the movement mechanism 204 , and the deposition rate monitor 205 are provided in a vacuum chamber 207 . The vacuum evaporation apparatus 200 moves at least one of a mask holder 201 and a substrate holder 202 to align a mask M held by the mask holder 201 and a substrate S held by the substrate holder 202 (not shown). It further includes a position adjustment mechanism (alignment mechanism).

The substrate S is placed on the upper surface of the mask M, which is held in a horizontal state, with the surface to be processed facing down. An evaporation source unit 203 is provided below the mask M. The evaporation source unit 203 generally includes a container (crucible) that contains a film-forming material, a heater that heats the film-forming material in the container, and the like. Further, if necessary, the evaporation source unit 203 may be provided with a reflector, a heat transfer member, a shutter, etc. to increase heating efficiency. The moving mechanism 204 is a means for moving (scanning) the evaporation source unit 203 in parallel to the processing surface of the substrate S. In this embodiment, a moving mechanism 204 with one axis is used, but a moving mechanism with two or more axes may be used. In this embodiment, the substrate S is placed on the top surface of the mask M, but if the substrate S and the mask M are in close contact with each other, the substrate S may not be placed on the top surface of the mask M. You can. In addition, in this embodiment, a magnet (not shown) is brought close to the surface of the substrate S opposite to the surface to be processed, and the mask foil of the mask M is attracted by magnetic force, thereby improving the adhesion of the mask M to the substrate S. It's increasing. Further, in FIG. 2, although the evaporation source unit 203 is shown as one, it is also possible to arrange a plurality of evaporation source units or containers side by side and move them as a unit. According to such a configuration, different materials can be stored and evaporated in each evaporation source unit or container, and a mixed film or a laminated film can be formed.

The film-forming rate monitor 205 is a sensor for monitoring the film-forming speed of a thin film formed on the substrate S. The film-forming rate monitor 205 is disposed near the surface to be processed of the substrate S and has a crystal oscillator that moves together with the evaporation source unit 203, and prevents the film-forming material from being deposited on the surface of the crystal oscillator. Based on the amount of change in the resonant frequency (natural frequency) due to the addition of mass, the deposition rate (evaporation rate) [Å/s], which is the amount of deposition material deposited per unit time, is estimated.

The film-forming control unit 206 adjusts the film-forming time [s] according to the film-forming rate [Å/s] obtained by the film-forming rate monitor 205 and the film thickness value evaluated by the film thickness measuring unit described below. By doing so, the thickness of the thin film formed on the substrate S is controlled to be the target value. The film forming time is adjusted by changing the scanning speed of the evaporation source unit 203 by the moving mechanism 204. In this embodiment, the film thickness was controlled by adjusting the film forming time (adjusting the scan speed), but as is commonly done in conventional vacuum evaporation equipment, the heater temperature of the evaporation source unit 203 could be controlled by adjusting the film thickness. The amount of evaporation (spraying amount) of the material may be controlled by adjustment, the shutter opening degree of the evaporation source unit 203, and the like. Further, the film formation control unit 206 may perform a combination of adjustment of the film formation time and adjustment of the amount of evaporation. That is, the film deposition control unit 206 may control to adjust at least one of the scan speed, heater temperature, and shutter opening of the evaporation source unit 203.

<Pass chamber alignment mechanism>
FIG. 3 is a cross-sectional view schematically showing the configuration of the pass chamber PSx. FIG. 3 corresponds to the AA cross section in FIG.

An alignment mechanism for aligning the substrate S is provided in the pass chamber PSx. The substrates S transported through the transport chamber TRx and the turning chamber TCx have positional variations due to the positional accuracy of the robot used for transport. In this embodiment, this positional shift can be suppressed by the alignment mechanism provided in the pass chamber PSx. The alignment mechanism generally includes a substrate tray 301 installed inside the vacuum chamber 300, an XYθ drive device 302 for driving the substrate tray 301 in the X-axis direction, Y-axis direction, and θ direction, and a It has a camera 305 that photographs the substrate S (the alignment mark 304 thereof) through a window 303 provided on the bottom surface, and an alignment control section 306. The camera 305 and the alignment control unit 306 correspond to a position acquisition unit that acquires position information of the substrate S placed inside the vacuum chamber 300 with respect to the vacuum chamber 300. Based on the acquired position information, the XYθ drive device 302 as a moving mechanism moves the substrate S relative to the vacuum chamber 300. Note that in this embodiment, the pass chamber PSx is configured to be able to accommodate only one substrate, but it may be configured to be able to accommodate a plurality of substrates.

When the substrate S is placed on the substrate tray 301 by the transfer robot RCx in the turning chamber TCx, the alignment mark 304 of the substrate S is photographed by the camera 305. The alignment control unit 306 calculates the positional deviation amount (ΔX, ΔY) and rotational deviation amount (Δθ) of the substrate S with respect to the reference position by detecting the position and inclination of the alignment mark 304 from the image captured from the camera 305. do. Then, the alignment control unit 306 controls the XYθ drive device 302 to correct the positional deviation and rotational deviation of the substrate S, thereby aligning the substrate S. Note that a reference mark indicating a reference position may be provided in the pass chamber PSx. Then, when photographing the alignment mark 304 of the substrate S with the camera 305, the reference mark may also be photographed to obtain the positional deviation amount and rotational deviation amount of the substrate S with respect to the reference position.

When forming a film on the substrate S in the film forming chambers EVx1 to EVx4, it is necessary to align the substrate S and the mask M with high precision. Therefore, in the film forming chambers EVx1 to EVx4, it is necessary to perform ultra-high precision positioning with respect to the substrate S, which is called fine alignment. By performing rough alignment of the substrate S in advance in the pass chamber PSx as in this embodiment, the amount of initial deviation when the substrate S is carried into the film forming chamber of the subsequent unit CUx+1 can be suppressed to a small value. Therefore, the time required for fine alignment performed in the film forming chamber can be shortened. Further, by performing (rough) alignment before film thickness measurement, it is possible to improve the positional accuracy of the film thickness measurement location within the substrate. This makes it possible to keep the film thickness measurement location within the substrate constant for each substrate, making it possible to evaluate film thickness with high accuracy.

FIG. 4 shows an example of alignment marks 304 on the substrate S. In this example, alignment marks 304 are attached to two corners of the rear end of the substrate S, respectively. However, the arrangement of the alignment mark 304 is not limited to this. For example, it may be arranged at a corner on the front end side, it may be arranged at two diagonal corners, or all four corners, or it may be arranged along an edge instead of a corner. It may be placed at any position. Further, the number of alignment marks 304 is also arbitrary. Alternatively, instead of the alignment mark 304 on the substrate S, an edge or corner of the substrate S may be detected.

<Film thickness measurement section>
As shown in FIG. 3, the pass chamber PSx is provided with a film thickness measuring section 310 that measures the thickness of the film formed on the substrate S. Although only one film thickness measurement section 310 is shown in FIG. 3, a plurality of film thickness measurement sections may be provided. By evaluating multiple locations at once, it is possible to obtain information on film thickness variations within the substrate surface, and to evaluate multiple types of films deposited in multiple deposition chambers at once. .

The film thickness measurement unit 310 is a sensor that optically measures the film thickness, and in this embodiment, a reflection spectroscopic film thickness meter is used. The film thickness measuring unit 310 is generally composed of a film thickness evaluation unit 311, a sensor head 312, and an optical fiber 313 connecting the sensor head 312 and the film thickness evaluation unit 311. The sensor head 312 is disposed below the substrate tray 301 in the vacuum chamber 300 and is connected to an optical fiber 313 via a vacuum flange 314 attached to the bottom surface of the vacuum chamber 300. The sensor head 312 has a function of setting the irradiation area of the light guided via the optical fiber 313 to a predetermined area, and can use an optical fiber and optical components such as a pinhole or a lens.

FIG. 5 is a block diagram of the film thickness measuring section 310. The film thickness evaluation unit 311 includes a light source 320, a spectrometer 321, and a measurement control section 322. The light source 320 is a device that outputs measurement light, and for example, a deuterium lamp, a xenon lamp, a halogen lamp, or the like is used. As the wavelength of light, a range of 200 nm to 1 μm can be used. The spectrometer 321 is a device that separates the reflected light input from the sensor head 312 and measures the spectrum (intensity for each wavelength), and is composed of, for example, a spectroscopic element (grating, prism, etc.) and a detector that performs photoelectric conversion. be done. The measurement control unit 322 is a device that controls the light source 320 and calculates the film thickness based on the reflection spectrum.

The measurement light output from the light source 320 is guided to the sensor head 312 via the optical fiber 313, and is projected onto the substrate S from the sensor head 312. The light reflected by the substrate S is input from the sensor head 312 to the spectrometer 321 via the optical fiber 313. At this time, the light reflected from the surface of the thin film on the substrate S and the light reflected from the interface between the thin film and its underlying layer interfere with each other. As a result of being affected by interference and absorption by the thin film in this way, the reflection spectrum is affected by the optical path length difference, that is, the film thickness. By analyzing the reflection spectrum using the measurement control unit 322, the thickness of the thin film can be measured. The reflection spectroscopic film thickness evaluation described above is capable of evaluating organic films with a thickness of several nanometers to several hundreds of nanometers in a short time and with high precision. This is the preferred method for evaluating. Here, as materials for the organic layer, αNPD: a hole transport material such as α-naphthylphenylbiphenyldiamine, Ir(ppy)3: a luminescent material such as iridium-phenylpyrimidine complex, Alq3: tris(8-quinolinolato)aluminum and Liq: 8-hydroxyquinolinolato-lithium). Furthermore, it can also be applied to a mixed film of the above-mentioned organic materials.

FIG. 4 shows an example of a thin film for film thickness measurement formed on the substrate S. The substrate S has a position that does not overlap with the area where the display panel 340 is formed (in the illustrated example, the front end of the substrate S).
A film thickness measurement area 330 is provided at . During the film forming process in each film forming chamber, the film thickness measurement area 330 can be A thin film for film thickness measurement (hereinafter referred to as measurement patch 331, sometimes referred to as measurement piece or evaluation organic film) is formed inside. This can be easily realized by forming an opening for the measurement patch 331 in advance in the mask M used in each film forming chamber.

The film thickness measurement area 330 is set to an area where a plurality of measurement patches 331 can be formed, and the formation position of the measurement patches 331 may be changed for each layer whose film thickness is to be measured. That is, if you want to measure the film thickness of a film formed in one film formation chamber (a single film or a laminated film in which multiple films are laminated), the measurement patch 331 can also be measured in one film formation chamber. If you want to measure the thickness of a laminated film that has been formed through multiple film forming chambers by forming only a single film or a laminated film, the measurement patch 331 also includes the laminated film that you want to measure. It is preferable to form the same laminated film as the film. By using different measurement patches 331 for each layer to be measured in this manner, accurate measurement of film thickness can be achieved. As described above, in the configuration in which the film thickness is measured after alignment, the accuracy of the film thickness measurement position is high, so each measurement patch 331 can be made small and arranged at high density. Become. Thereby, the area of the film thickness measurement area 330 within the substrate can be reduced, and the number of display panels 340 formed on the substrate can be increased.

<Highly accurate control of film thickness>
As described above, the vacuum evaporation apparatus 200 in each film forming chamber is controlled using the film forming rate monitor 205 so that the film forming rate of the film to be formed becomes a target film forming rate. However, the film formation rate monitor 205 does not directly measure the thickness of the film formed on the substrate S, but indirectly measures the film formation rate using a crystal oscillator placed at a different position from the substrate S. It's just a thing. Therefore, due to various error factors such as the amount of material deposited on the crystal oscillator and the temperature of the crystal oscillator, the thickness of the film deposited on the crystal oscillator of the film formation rate monitor 205 and the thickness of the film deposited on the substrate S are The thickness may be different, or an error may occur in the measurement value itself of the film forming rate monitor 205. Errors in measuring the thickness of the film formed on the substrate S by the film formation rate monitor 205 cause variations in film thickness, leading to deterioration in panel quality and yield, so countermeasures are required.

Therefore, in this embodiment, the thickness of the thin film formed on the substrate S is directly measured by the film thickness measuring section 310, and the film forming conditions of each film forming chamber are controlled based on the measurement results, thereby achieving high accuracy. Realizes accurate film thickness control. Note that when controlling the film forming conditions, both the value of the film forming rate monitor 205 and the measurement result of the film thickness measuring section 310 may be used. The film formation rate monitor 205, which evaluates the amount of deposition on the crystal resonator, and the film thickness measurement unit 310, which optically evaluates the film thickness on the substrate S, have different measurement principles. They behave differently in response to fluctuations in Therefore, by using a plurality of evaluation means with different measurement principles in combination, more reliable film thickness control becomes possible.

FIG. 6 is a block diagram schematically showing the configuration of the film thickness control system. The film thickness control unit 350 transmits a control command to the film formation control unit 206 of each film formation chamber based on the measurement result of the film thickness measurement unit 310. Methods for controlling film forming conditions are broadly classified into feedback control and feedforward control. Feedback control is control in which the film thickness control section 350 adjusts the film thickness of the subsequent substrate Ss by controlling the film formation conditions of the film formation chamber upstream of the film thickness measurement section 310. In the feedforward control, the film thickness control unit 350 adjusts the film thickness of the substrate S measured by the film thickness measurement unit 310 by controlling the film formation conditions of the film formation chamber downstream of the film thickness measurement unit 310. It is control. The film thickness control unit 350 may perform either feedback control or feedforward control, or may perform both of them. Further, the control method may be different for each film forming chamber or unit. The film forming conditions to be controlled include, for example, the film forming time, the scan speed of the evaporation source unit 203, the heater temperature of the evaporation source unit 203, the shutter opening degree of the evaporation source unit 203, and the like. The film thickness control unit 350 may control any one of these film forming conditions, or may control a plurality of film forming conditions. In this embodiment, scan speed is controlled.

<Method for manufacturing electronic devices>
Next, an example of a method for manufacturing an electronic device will be described. The configuration and manufacturing method of an organic EL display device will be illustrated below as an example of an electronic device.

First, the organic EL display device to be manufactured will be explained. 7(a) is an overall view of the organic EL display device 50, FIG. 7(b) is a view showing the cross-sectional structure of one pixel, and FIG. 7(c) is an enlarged view of the red layer.

As shown in FIG. 7A, in the display area 51 of the organic EL display device 50, a plurality of pixels 52 each including a plurality of light emitting elements are arranged in a matrix. Although details will be explained later, each light emitting element has a structure including an organic layer sandwiched between a pair of electrodes. Note that the pixel herein refers to the smallest unit that can display a desired color in the display area 51. In the case of a color organic EL display device, a pixel 52 is configured by a combination of a plurality of sub-pixels including a first light-emitting element 52R, a second light-emitting element 52G, and a third light-emitting element 52B that emit different light emissions. The pixel 52 is often composed of a combination of three types of subpixels: a red (R) light emitting element, a green (G) light emitting element, and a blue (B) light emitting element, but is not limited thereto. The pixel 52 only needs to include at least one type of subpixel, preferably two or more types of subpixels, and more preferably three or more types of subpixels. The subpixels configuring the pixel 52 may be, for example, a combination of four types of subpixels: a red (R) light emitting element, a green (G) light emitting element, a blue (B) light emitting element, and a yellow (Y) light emitting element. A combination of a yellow (Y) light emitting element, a cyan (C) light emitting element, and a magenta (M) light emitting element may be used.

FIG. 7(b) is a schematic partial cross-sectional view taken along line AB in FIG. 7(a). The pixel 52 includes, on a substrate 53, a first electrode (anode) 54, a hole transport layer 55, one of a red layer 56R, a green layer 56G, and a blue layer 56B, an electron transport layer 57, and a second electrode. It has a plurality of sub-pixels each made of an organic EL element including an electrode (cathode) 58. Among these, the hole transport layer 55, the red layer 56R, the green layer 56G, the blue layer 56B, and the electron transport layer 57 correspond to organic layers. The red layer 56R, the green layer 56G, and the blue layer 56B are formed in patterns corresponding to light emitting elements (sometimes referred to as organic EL elements) that emit red, green, and blue, respectively. Further, the first electrode 54 is formed separately for each light emitting element. The hole transport layer 55, the electron transport layer 57, and the second electrode 58 may be formed in common across the plurality of light emitting elements 52R, 52G, and 52B, or may be formed for each light emitting element. That is, as shown in FIG. 7B, a hole transport layer 55 is formed as a common layer over a plurality of subpixel regions, and a red layer 56R, a green layer 56G, and a blue layer 56B are formed separately for each subpixel region. Further, an electron transport layer 57 and a second electrode 58 may be formed as a common layer over a plurality of sub-pixel regions. Note that an insulating layer 59 is provided between the first electrodes 54 in order to prevent short circuits between adjacent first electrodes 54 . Furthermore, since the organic EL layer is degraded by moisture and oxygen, a protective layer 60 is provided to protect the organic EL element from moisture and oxygen.

In FIG. 7B, the hole transport layer 55 and the electron transport layer 57 are shown as one layer, but depending on the structure of the organic EL display element, they may be formed of multiple layers including a hole blocking layer and an electron blocking layer. may be done. Further, an energy band structure is provided between the first electrode 54 and the hole transport layer 55 so that holes can be smoothly injected from the first electrode 54 to the hole transport layer 55. Alternatively, a hole injection layer may be formed. Similarly, an electron injection layer may also be formed between the second electrode 58 and the electron transport layer 57.

Each of the red layer 56R, the green layer 56G, and the blue layer 56B may be formed of a single light emitting layer, or may be formed by laminating a plurality of layers. FIG. 7C shows an example in which the red layer 56R is formed of two layers. For example, the red light emitting layer may be the upper layer 56R2, and the hole transport layer or electron blocking layer may be the lower layer 56R1. Alternatively, the red light-emitting layer may be the lower layer 56R1, and the electron transport layer or hole blocking layer may be the upper layer 56R2. Providing a layer below or above the light emitting layer in this manner has the effect of improving the color purity of the light emitting element by adjusting the light emitting position in the light emitting layer and adjusting the optical path length. Although FIG. 7C shows an example of the red layer 56R, a similar structure may be adopted for the green layer 56G and the blue layer 56B. Further, the number of layers may be two or more. Furthermore, layers of different materials may be laminated, such as a light-emitting layer and an electronic block layer, or layers of the same material may be laminated, such as a layer of two or more light-emitting layers.

Next, an example of a method for manufacturing an organic EL display device will be specifically described. Here, it is assumed that the red layer 56R, the green layer 56G, and the blue layer 56B are all composed of a single light emitting layer.

First, a substrate 53 on which a circuit (not shown) for driving an organic EL display device and a first electrode 54 are formed is prepared. Note that the material of the substrate 53 is not particularly limited, and may be made of glass, plastic, metal, or the like. In this embodiment, as the substrate 53, a substrate in which a polyimide film is laminated on a glass substrate is used.

A resin layer such as acrylic or polyimide is coated by bar coating or spin coating on the substrate 53 on which the first electrode 54 is formed, and an opening is formed in the portion where the first electrode 54 is formed by applying a lithography method to the resin layer. The insulating layer 59 is formed by patterning to form an insulating layer 59. This opening corresponds to the light emitting region where the light emitting element actually emits light.

The substrate 53 on which the insulating layer 59 has been patterned is carried into a first film forming chamber, and the hole transport layer 55 is formed as a common layer on the first electrode 54 in the display area. The hole transport layer 55 is formed using a mask in which an opening is formed for each display area 51 that will eventually become a panel portion of each organic EL display device. Note that the mask used in the first film forming chamber has an opening provided in a part corresponding to the film thickness measurement area 330, which is different from the part corresponding to the area where the display panel 340 of the substrate 53 is formed. There is. This opening is formed in a portion corresponding to the film thickness measurement area 330 at a position different from that of the mask used in other film forming chambers. Thereby, a measurement patch 331 in which only the hole transport layer 55 is formed can be formed in the film thickness measurement area 330.

Next, the substrate 53 on which up to the hole transport layer 55 has been formed is carried into a second film forming chamber. The substrate 53 and the mask are aligned, the substrate is placed on the mask, and the portion of the substrate 53 on the hole transport layer 55 where the element that emits red color is arranged (the area where the red sub-pixel is formed) Then, a red layer 56R is formed. Here, the mask used in the second film-forming chamber is a mask with openings formed only in a plurality of regions that will become red subpixels among a plurality of regions on the substrate 53 that will become subpixels of the organic EL display device. It is a fine mask. As a result, the red layer 56R is formed only in the region that will become a red subpixel among the regions on the substrate 53 that will become a plurality of subpixels. In other words, the red layer 56R is not deposited on a region that becomes a blue subpixel or a region that becomes a green subpixel among the plurality of subpixel regions on the substrate 53; The film is deposited in the area where . Note that the mask used in the second film forming chamber has an opening provided in a part corresponding to the film thickness measurement area 330, which is different from the part corresponding to the area where the display panel 340 of the substrate 53 is formed. There is. An opening is formed in a portion corresponding to the film thickness measurement area 330 at a position different from that of the mask used in other film forming chambers. Thereby, a measurement patch 331 in which only the red layer 56R is formed can be formed in the film thickness measurement area 330.

Similar to the formation of the red layer 56R, a green layer 56G is formed in the third film formation chamber, and a blue layer 56B is further formed in the fourth film formation chamber. After the deposition of the red layer 56R, green layer 56G, and blue layer 56B is completed, the electron transport layer 57 is deposited over the entire display area 51 in the fifth deposition chamber. The electron transport layer 57 is formed as a layer common to the three color layers 56R, 56G, and 56B.

The substrate on which up to the electron transport layer 57 has been formed is moved to a sixth film forming chamber, and the second electrode 58 is formed into a film. In this embodiment, each layer is formed by vacuum evaporation in the first to seventh film forming chambers. However, the present invention is not limited thereto, and for example, the second electrode 58 may be formed by sputtering in the seventh film forming chamber. Thereafter, the substrate on which up to the second electrode 68 has been formed is moved to a sealing device, and a protective layer 60 is formed by plasma CVD (sealing step), thereby completing the organic EL display device 50. In addition, although the protective layer 60 is formed by the CVD method here, it is not limited to this, and may be formed by the ALD method or the inkjet method.

If the substrate 53 on which the insulating layer 59 has been patterned is exposed to an atmosphere containing moisture or oxygen from the time the substrate 53 on which the insulating layer 59 has been patterned is carried into the film-forming apparatus until the film-forming of the protective layer 60 is completed, the light-emitting layer made of the organic EL material may be damaged. There is a risk of deterioration due to moisture and oxygen. Therefore, loading and unloading of substrates between film forming chambers is performed under a vacuum atmosphere or an inert gas atmosphere.

<Example of film thickness control>
A specific example of film thickness control by the film thickness control system will be explained. Here, as shown in FIG. 8, a lamination process will be exemplified in which a first layer as a common layer is formed, and then a second layer and a third layer are formed side by side thereon. For example, in the case of the organic EL display device shown in FIG. 7(b), the hole transport layer 55 corresponds to the first layer, the red layer 56R corresponds to the second layer, and the green layer 56G corresponds to the second layer. This corresponds to layer 3.

First, a comparative example will be shown with reference to FIG. FIG. 9 is a time chart of a comparative example, and reference numerals in the figure represent the cluster type unit, film forming chamber, connection chamber, substrate transfer robot, etc. shown in FIG. 1.

In the comparative example, both the first layer and the second layer are formed within the same unit CU1. That is, after the first layer is formed on the substrate S1 in the film forming chamber EV11, the substrate S1 is transported from the film forming chamber EV11 to EV12 by the transport robot RR1. Then, after a second layer is formed in the film forming chamber EV12 over the first layer, the substrate S1 is transported from the film forming chamber EV12 to the buffer chamber BC1 by the transport robot RR1. Subsequently, the substrate S1 is transferred from the buffer chamber BC1 to the pass chamber PS1 by the transfer robot RC1 in the connection chamber CN1, and alignment of the substrate S1 is performed in the pass chamber PS1. Thereafter, the film thickness of the first layer is measured by the film thickness measuring section 310 in the pass chamber PS1. When the film thickness of the first layer differs from the target value, the film thickness control section 350 performs feedback control on the film forming chamber EV11 in the unit CU1, and adjusts the film forming conditions for the subsequent substrate S2. On the other hand, the substrate S1 on which the film thickness measurement has been completed is transported from the pass chamber PS1 to the film forming chamber EV21 of the second unit CU2 by the transport robot RR2, where a third layer is formed.

By performing such feedback control, the film thickness of the first layer in the subsequent substrate S2 can be corrected to an appropriate value. However, in the case of such a procedure, it is difficult to increase the throughput of the apparatus because the deposition of the first layer on the next substrate cannot be started until the thickness of the first layer on the preceding substrate is measured. .

Therefore, in this example, the film forming procedure is set so that the first layer and the second layer are formed in different units, and immediately after the first layer is formed, the first layer is formed in the connection chamber. A configuration is adopted in which the thickness is measured and feedback control of the first layer is performed based on the measurement results.

This example will be described with reference to FIG. FIG. 10 is a time chart of the embodiment. First, a first layer is formed in the first film forming chamber EV11 in the first unit CU1, and the substrate S1 is transported from the film forming chamber EV11 to the buffer chamber BC1 by the transport robot RR1. That is, the substrate S1 on which the first layer (common layer) has been formed in the first film forming chamber EV11 is transported to the connection chamber without passing through another film forming chamber. In the present embodiment, other film forming chambers (film forming chamber EV12, film forming chamber EV14) are arranged in the first unit CU1 on the downstream side of the first film forming chamber EV11 in the flow direction of the substrate. However, in this embodiment, even in such an apparatus configuration, the substrate S1 can be deposited downstream without passing through another deposition chamber. The film is transported to the connection chamber, and the film formation process is not performed in the other film formation chambers (film formation chamber EV12, film formation chamber EV14). Subsequently, the substrate S1 is transferred from the buffer chamber BC1 to the pass chamber PS1 by the transfer robot RC1 in the connection chamber CN1, and alignment of the substrate S1 is performed in the pass chamber PS1. Then, the film thickness of the first layer is measured by the film thickness measuring section 310 in the pass chamber PS1. When the film thickness of the first layer differs from the target value, the film thickness control section 350 performs feedback control on the first film forming chamber EV11 in the first unit CU1. For example, if the film thickness of the first layer is smaller than the target value, the scanning speed of the first film forming chamber EV11 is lowered, and conversely, if the film thickness of the first layer is larger than the target value, the scanning speed of the first film forming chamber EV11 is reduced. What is necessary is to increase the scanning speed of the membrane chamber EV11. On the other hand, the substrate S1 on which the film thickness measurement has been completed is transported by the transport robot RR2 from the pass chamber PS1 to the second film forming chamber EV21 of the second unit CU2, where a second layer is formed. Thereafter, the substrate S1 is transported from the film forming chamber EV21 to EV22 by the transport robot RR2, and a third layer is formed. Note that when a second film is deposited on the substrate S1 in the second deposition chamber EV21 or a third film is deposited in the third deposition chamber EV22, the measurement is performed in the pass chamber PS1. Feedforward control may be performed to control the film forming conditions of the second film forming chamber EV21 and the third film forming chamber EV22 based on the determined film thickness of the first layer. As a result, even if the film thickness of the first layer of the substrate S1 is different from the target value, by adjusting the film thickness of the film formed after the first layer, each light emitting element (each subpixel ) can be adjusted to improve the color purity of the light emitting element.

According to the feedback control of this example, since the film thickness measurement and feedback of the first layer are performed immediately after the first layer is formed, the subsequent The timing of starting film formation on the substrate S2 can be brought forward. Therefore, the throughput of the device can be improved and high productivity can be achieved.

Note that the embodiment described here is just an example. For example, the unit that forms the first layer and the unit that forms the second layer do not need to be adjacent to each other via a connection chamber, but may be separated from each other like unit CU1 and unit CU3 in FIG. You can. That is, the connection chamber in which the film thickness measuring section 310 is installed may be disposed between the upstream unit (for example, CU1) and the downstream unit (for example, CU3). However, even in that case, it is desirable from the viewpoint of throughput to install the film thickness measuring section 310 in a connection chamber connected immediately after the unit that forms the first layer.

<Advantages>
According to the film forming apparatus (electronic device manufacturing apparatus) of this embodiment, a means for adjusting the film forming conditions based on the measurement results of the film thickness measuring section 310 is provided, so that the film forming rate monitor 205 using a crystal oscillator is It is possible to correct errors and realize highly accurate film thickness control. In addition, the film thickness measuring section 3
By arranging 10 in the connection chamber rather than in the cluster type unit, it is possible to suppress the increase in size of the device (increase in installation area). In addition, film thickness can be measured using the time the substrate remains in the connection chamber for transfer between units, reducing the impact of film thickness measurement on the productivity (throughput) of the entire device. It can be made as small as possible.

Furthermore, when laminating a plurality of layers, the thickness of the lower first layer can be controlled with high precision. This is extremely advantageous when depositing a common layer that requires precision. Generally, a common layer such as a hole transport layer is often formed thicker than a light-emitting layer formed thereon by coating separately for each subpixel. For example, the common layer is formed with a film thickness of about 500 to 1500 Å, and the red, blue, and green layers (a single layer of each color's light emitting layer or a layer of each color's light emitting layer and adjustment layer) are formed with a film thickness of about 100 to 500 Å. Formed in thickness. In this way, the common layer is often formed to have a thickness about 3 to 5 times that of each of the red, blue, and green layers. When the common layer is formed to be thick in this way, if the thickness of the common layer is different from the target value, feedforward control is performed as described above to increase the red color formed on the common layer. Even if an attempt is made to adjust the overall film thickness by adjusting the film thickness of each of the blue and green coloring layers, the adjustment may not be completed depending on the deviation of the film thickness of the common layer from the target value. Furthermore, since it is necessary to adjust the film thickness for each of the red, blue, and green coloring layers, control becomes complicated and, in some cases, the takt time of the entire apparatus may increase. In such a case, as in this embodiment, the film thickness is measured immediately after the common layer is formed, and feedback control is performed on the common layer based on the measurement result. Feedforward control to the subsequent film forming chamber can reduce the number of substrates that become defective due to insufficient adjustment, and can improve yield.

<Others>
The above embodiments merely show specific examples of the present invention. The present invention is not limited to the configuration of the above-described embodiment, and can take various modifications. For example, the number of cluster-type units provided in the electronic device manufacturing apparatus may be any number as long as it is two or more. Further, the configuration of each cluster type unit is also arbitrary, and the number of film forming chambers and the number of mask chambers may be appropriately set according to the purpose. In the above embodiment, an apparatus configuration is shown in which the film formation process can be performed through two routes: the film formation chamber EVx1→EVx2 and the film formation chamber EVx3→EVx4, but the configuration may be one route or three or more routes. . For example, in the configuration of FIG. 1, two stages may be arranged in one film forming chamber, and while film forming processing is being performed on one stage, a mask and a substrate may be set on the other stage. Thereby, four routes can be realized in the configuration of FIG. 1, and productivity can be further improved. In a film forming apparatus having multiple routes like this, by adopting a method in which the film thickness measurement section is installed in the connection chamber, there is no need to provide a film thickness measurement section for each route, making it possible to measure the film thickness. The number of parts required is small, and costs and device size can be reduced. In the above embodiment, the film thickness measuring section is placed in the pass chamber, but the film thickness measuring section may be placed anywhere within the connection chamber. Furthermore, a chamber for film thickness measurement may be provided within the connection chamber. The film thickness measurement section does not need to be provided in all connection chambers of the electronic device manufacturing apparatus, and may be provided only in some connection chambers. That is, the film thickness measuring section may be provided only at locations where highly accurate control of film thickness is required. In the above embodiment, a reflection spectroscopic film thickness meter is used, but other types of film thickness meter (for example, a spectroscopic ellipsometer) may be used.

CU1, CU2, CU3: Cluster type units EV11 to EV14, EV21 to EV24, EV31 to EV34: Film forming chambers RR1, RR2, RR3: Transport robot (transport means)
CN1, CN2: Connection chamber PS1, PS2: Pass chamber S: Substrate 310: Film thickness measurement section 350: Film thickness control section

Claims (16)

A cluster-type device having a first transport means and a plurality of film forming chambers including a first film forming chamber disposed around the first transport means and forming a first film on a substrate. a first unit;
A plurality of film forming chambers including a second transport means and a second film forming chamber disposed around the second transport means and forming a second film overlapping the first film on the substrate. a cluster-type second unit having a chamber;
a connection chamber arranged on the substrate transport path from the first unit to the second unit and connecting two cluster-type units;
a first measurement unit that is at least partially provided in the connection chamber and that measures the thickness of the first film formed on the substrate;
A film forming apparatus comprising: a control unit that controls film forming conditions in the first film forming chamber based on the thickness of the first film measured by the first measuring unit,
The connection chamber is
position acquisition means for acquiring information on the position of a substrate placed inside the connection chamber in the connection chamber;
a moving means for moving the substrate within the connection chamber based on the position information acquired by the position acquisition means;
The moving means moves the substrate to a measurement position based on the position information,
The first measuring unit is configured to measure the first film deposited on the substrate moved by the moving means to the measurement position based on the position information after the substrate is moved by the moving means . A film forming apparatus characterized by measuring the thickness of a film. comprising an alignment means provided in the second film forming chamber and adjusting the relative position of the substrate and the mask;
The film forming apparatus according to claim 1, wherein the movement of the substrate to the measurement position by the moving means is performed with a coarser precision than the adjustment by the alignment means. The film forming apparatus according to claim 1 or 2, wherein the first measurement unit optically measures the thickness of the film formed on the substrate. A second measuring section is provided, at least a portion of which is provided in the first film forming chamber, and which measures the thickness of the film formed on the substrate accommodated in the first film forming chamber. The film forming apparatus according to any one of claims 1 to 3, wherein: Any one of claims 1 to 3, further comprising a crystal oscillation type film forming rate monitor, at least a part of which is provided in the first film forming chamber, and which measures the amount of film forming material released from the evaporation source. 2. The film forming apparatus according to item 1. A control unit that controls at least one of the film formation conditions in the first film formation chamber and the film formation conditions in the second film formation chamber based on the film thickness measured by the first measurement unit. The film forming apparatus according to any one of claims 1 to 5, further comprising: Based on the film thickness measured by the first measuring section and the film thickness measured by the second measuring section, the film forming conditions of the first film forming chamber and the second film forming chamber are determined. The film forming apparatus according to claim 4, further comprising a control section that controls at least one of film forming conditions in the film forming chamber. Based on the film thickness measured by the first measurement unit and the release amount of the film-forming material measured by the film-forming rate monitor, the film-forming conditions of the first film-forming chamber and the first film-forming chamber are determined. The film forming apparatus according to claim 5, further comprising: a control section that controls at least one of the film forming conditions of the second film forming chamber. The substrate has an element area in which an element is formed, and a measurement area different from the element area,
In the film formation performed in the first film formation chamber, the first film is formed in each of the element region and the measurement region,
9. The film forming apparatus according to claim 1, wherein the first measurement unit measures the thickness of the first film formed in the measurement area. The film forming apparatus according to any one of claims 1 to 9, wherein at least a part of the first measurement section is arranged in the connection chamber connected to the first unit. . The first transport means transports the substrate on which the first film is formed from the first film forming chamber to the connection chamber without passing through another film forming chamber. The film forming apparatus according to claim 10. The substrate is
a first pixel region in which a plurality of first light emitting elements each emitting light of a first wavelength are formed;
a second pixel region in which a plurality of second light emitting elements each emitting light of a second wavelength different from the first wavelength are formed;
In the film formation performed in the first film formation chamber, the first film is formed in each of the first pixel region and the second pixel region,
In the film formation performed in the second film formation chamber, the second film is formed in the first pixel region, and the second film is not formed in the second pixel region. The film forming apparatus according to any one of claims 1 to 11. The first film constitutes a hole transport layer or an electron block layer of each of the first light emitting element and the second light emitting element,
The film forming apparatus according to claim 12, wherein the second film constitutes a light emitting layer of the first light emitting element. 13. The method further comprises a third film forming chamber in which a third film is formed in the second pixel region, and in which the third film is not formed in the first pixel region. film deposition equipment. The first film constitutes a hole transport layer or an electron block layer of each of the first light emitting element and the second light emitting element,
The second film constitutes a light emitting layer of the first light emitting element,
The film forming apparatus according to claim 14, wherein the third film constitutes a light emitting layer of the second light emitting element. forming the first film using the film forming apparatus according to any one of claims 1 to 15;
A method for manufacturing an electronic device, comprising: forming the second film using the film forming apparatus.

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