JP2021161488A - Film deposition device, film deposition method, and electron device manufacturing method - Google Patents

Abstract

To provide a technique for achieving highly-accurate film thickness control and high productivity, in a film deposition device with a structure in which plural cluster-type units are coupled.SOLUTION: A film deposition device comprises: a first cluster-type unit having a first film deposition chamber for depositing a first layer on a substrate; a second cluster-type unit having a second film deposition chamber depositing a second layer overlaid on the first layer; and a coupling chamber arranged between the first unit and the second unit and coupling adjacent cluster-type units. The device comprises: a film thickness measuring part at least partially provided in the coupling chamber, and measuring thickness of a film deposited on the substrate; and a control part controlling a film deposition condition of the first film deposition chamber based on thickness of the first layer measured by the film thickness measuring part.SELECTED DRAWING: Figure 10

Description

The present invention relates to a film forming apparatus, an electronic device manufacturing apparatus, a film forming method, and an electronic device manufacturing method.

In recent years, an organic EL display device (organic EL display) has been in the limelight as a flat panel display device. The organic EL display device is a self-luminous display, which is superior to the liquid crystal display in characteristics such as response speed, viewing angle, and thinning, and can be used as an existing liquid crystal panel display in various mobile terminals such as monitors, televisions, and smartphones. It is popular instead. It is also expanding its application fields to automobile displays and the like.

An organic EL element (organic light emitting diode, OLED: Organic Light Emitting Diode) constituting an organic EL display device has a function of having a light emitting layer which is an organic material layer that emits light between two facing electrodes (cathode electrode and anode electrode). It has a basic structure in which layers are formed. The functional layer and the electrode layer of the organic EL element can be manufactured, for example, by forming a film on a substrate through a mask in a vacuum film forming apparatus in a vacuum film forming apparatus.

The organic EL element is manufactured by sequentially forming electrodes and various functional layers on the surface to be processed of the substrate while sequentially transporting the substrate to each film forming chamber. According to Patent Document 1, in a manufacturing apparatus having a structure in which a plurality of cluster type units are connected, each unit is provided with a plurality of film forming chambers and an inspection chamber, and a substrate formed in a certain film forming chamber is conveyed to the inspection chamber. The configuration for measuring the film thickness is disclosed. Then, a configuration is disclosed in which a light emission characteristic simulation is performed using the film thickness measurement result, and the chromaticity correction layer is formed in the same film forming chamber or another film forming chamber based on the simulation result.

Japanese Unexamined Patent Publication No. 2005-322612

In the configuration of Patent Document 1, since the inspection room is provided in the cluster type unit, the board must be carried in and out of the inspection room by using the board transfer robot arranged in the center of the unit. In this case, the board transfer robot is used only for the inspection in the inspection room, and the operating rate of the board transfer robot increases and the maintenance cost increases as compared with the case where the inspection room is not provided in the cluster type unit. There is a problem that it will end up. In addition, since one of the chambers that can be used for film formation is occupied for inspection in order to provide an inspection room, the number of layers that can be formed by one unit is (compared to the case where there is no inspection room). Less. As a result, for example, what could be manufactured by three units in the past has an adverse effect such that four or more units are required. This adverse effect is not preferable because it leads to a decrease in throughput due to an increase in man-hours for transfer between units and an increase in the size of the entire manufacturing apparatus (increase in installation area).

The present invention has been made in view of the above circumstances, and provides a technique for realizing highly accurate film thickness control and high productivity in a film forming apparatus having a structure in which a plurality of cluster type units are connected. The purpose.

In the present disclosure, a first transport means and a plurality of film forming chambers including a first film forming chamber arranged around the first transport means and forming a first layer on a substrate are provided. A second unit having a cluster type, a second transport means, and a substrate arranged around the second transport means and having the first layer formed on the substrate are superposed on the first layer. A cluster-type second unit having a plurality of film forming chambers including a second film forming chamber for forming the layer of the above, and arranged between the first unit and the second unit. In a film forming apparatus including a connecting chamber for connecting adjacent cluster-type units, at least a part thereof is provided in the connecting chamber, and a film thickness measuring unit for measuring the film thickness of the film formed on the substrate. A film forming apparatus including a control unit that controls the film forming conditions of the first film forming chamber based on the film thickness of the first layer measured by the film thickness measuring unit. including.

According to the present invention, it is possible to realize highly accurate film thickness control and high productivity in a film forming apparatus having a structure in which a plurality of cluster type units are connected.

FIG. 1 is a plan view schematically showing a partial configuration of an electronic device manufacturing apparatus. FIG. 2 is a diagram schematically showing the configuration of a vacuum vapor deposition apparatus provided in the film forming chamber. FIG. 3 is a cross-sectional view schematically showing the configuration of the pass chamber. FIG. 4 is a diagram showing an alignment mark on the substrate and a patch for measuring the film thickness. FIG. 5 is a block diagram schematically showing the configuration of the film thickness measuring unit. FIG. 6 is a block diagram schematically showing the configuration of the film thickness control system. 7 (a) is an overall view of the organic EL display device, FIG. 7 (b) is a view showing a cross-sectional structure of one pixel, and FIG. 7 (c) is an enlarged view of a red layer. FIG. 8 is a diagram schematically showing a laminating process of an example. FIG. 9 is a time chart of a comparative example. FIG. 10 is a time chart of an embodiment.

Hereinafter, preferred embodiments and examples of the present invention will be described with reference to the drawings. However, the following embodiments and examples merely illustrate preferred configurations of the present invention, and the scope of the present invention is not limited to those configurations. Further, the hardware configuration and software configuration, processing flow, manufacturing conditions, dimensions, materials, shapes, etc. of the apparatus in the following description are limited to those of the present invention unless otherwise specified. It is not the purpose.

The present invention can be applied to an apparatus for forming a film by depositing various materials on the surface of the substrate while sequentially transporting the substrate to a plurality of film forming chambers, and a thin film (material layer) having a desired pattern by vacuum vapor deposition can be applied. ) Can be preferably applied to the device forming. As the material of the substrate, any material such as glass, a film of a polymer material, and a metal can be selected, and the substrate may be, for example, a substrate in which a film such as polyimide is laminated on a glass substrate. .. When a plurality of layers are formed on a substrate, the layer including the layers already formed by the previous step is also referred to as a "board". Further, as the vapor deposition material, any material such as an organic material and a metallic material (metal, metal oxide, etc.) may be selected. In addition to the vacuum deposition apparatus described in the following description, the present invention can be applied to a film forming apparatus having a sputtering apparatus or a CVD (Chemical Vapor Deposition) apparatus. Specifically, the technique of the present invention can be applied to manufacturing equipment such as organic electronic devices (for example, organic EL elements, thin film solar cells, organic photoelectric conversion elements), optical members, and the like. In particular, an apparatus for manufacturing an organic electronic device that forms an organic EL element or an organic photoelectric conversion element by evaporating a vapor-deposited material and depositing the vapor-deposited material on a substrate through a mask having an aperture pattern corresponding to a pixel or a sub-pixel. This is one of the preferred application examples of the present invention. Among them, the organic EL element manufacturing apparatus is one of the particularly preferable application examples of the present invention.

<Electronic device manufacturing equipment>
FIG. 1 is a plan view schematically showing a partial configuration of an electronic device manufacturing apparatus.

The electronic device manufacturing apparatus of FIG. 1 is used, for example, for manufacturing a display panel of an organic EL display device for a smartphone. In the case of a display panel for smartphones, for example, on a 4.5th generation substrate (about 700 mm x about 900 mm), a 6th generation full size (about 1500 mm x about 1850 mm) or a half cut size (about 1500 mm x about 925 mm) substrate. After forming a film for forming an organic EL element, the substrate is cut out to produce a plurality of small-sized panels.

The electronic device manufacturing apparatus has a structure in which a plurality of cluster type units (hereinafter, also simply referred to as “units”) CU1 to CU3 are connected via a connecting chamber. The cluster type unit refers to a film forming unit having a configuration in which a plurality of film forming chambers are arranged around a substrate transporting robot as a substrate transporting means. The number of units is not limited to three, and may be two or more. Hereinafter, in the explanation common to all units and the explanation not specifying the unit, the reference code indicated by "x" instead of the number such as "CUx" is used, and in the explanation of individual units, "CU1" is used. Use the reference code with numbers as shown above (the same applies to the reference code attached to the configuration other than the unit). FIG. 1 shows a part of a film forming apparatus in the entire electronic device manufacturing apparatus. For example, a substrate stocker, a heating device, a pretreatment device for cleaning, etc. may be provided upstream of the film forming apparatus, and, for example, a sealing device, a processing device, and a processed device may be provided downstream of the film forming apparatus. A stocker or the like of a substrate may be provided, and the electronic device manufacturing apparatus is composed of all of them.

The cluster type unit CUx has a central transport chamber TRx, and a plurality of film forming chambers EVx1 to EVx4 and mask chambers MSx1 to MSx2 arranged around the transport chamber TRx. Two adjacent units CUx and CUx + 1 are connected by a connecting chamber CNx. Each chamber TRx, EVx1 to EVx4, MSx1 to MSx2, and the connecting chamber CNx in the cluster type unit CUx are spatially connected, and the inside thereof is maintained in an atmosphere of an inert gas such as vacuum or nitrogen gas. In the present embodiment, each chamber constituting the unit CUx and the connecting chamber CNx is connected to a vacuum pump (vacuum exhaust means) (not shown), and vacuum exhaust can be performed independently. Each chamber is also referred to as a "vacuum chamber" or simply a "chamber". In addition, in this specification, a "vacuum" means a state filled with a gas having a pressure lower than the atmospheric pressure.

The transport chamber TRx is provided with a transport robot RRx as a transport means for transporting the substrate S and the mask M. The transfer robot RRx is, for example, an articulated robot having a structure in which a robot hand holding a substrate S and a mask M is attached to an articulated arm. In the cluster type unit CUx, the substrate S is maintained in a horizontal state in which the surface to be processed (surface to be filmed) of the substrate S faces downward in the direction of gravity, and is subjected to a transfer means such as a transfer robot RRx or a transfer robot RCx described later. Be transported. The robot hand included in the transfer robot RRx and the transfer robot RCx has a holding portion so as to hold a peripheral region of the surface to be processed of the substrate S. The transfer robot RRx transfers the substrate S between the path chamber PSx-1 on the upstream side, the film forming chambers EVx1 to EVx4, and the buffer chamber BCx on the downstream side. Further, the transfer robot RRx transfers the mask M between the mask chamber MSx1 and the film forming chambers EVx1 and EVx2, and transfers the mask M between the mask chamber MSx2 and the film forming chambers EVx3 and EVx4. The robot hands of the transfer robot RRx and the transfer robot RCx are configured to perform predetermined movements according to a predetermined program stored in the transfer control unit. The movement of each robot is set so that a plurality of substrates are efficiently conveyed when film formation is performed sequentially or simultaneously in a plurality of film forming chambers and a plurality of units on a plurality of substrates. NS. The position of the substrate on the transport path may deviate from the ideal transport position due to, for example, an error in the movement of the robot hand due to fluctuations in the bending of the arm. In order to fine-tune the movement of the robot hand, the program that determines the movement of the robot hand is modified as necessary.

The mask chambers MSx1 and MSx2 are chambers provided with a mask stocker in which the mask M used for film formation and the used mask M are housed. The mask M used in the film forming chambers EVx1 and EVx3 is stocked in the mask chamber MSx1, and the mask M used in the film forming chambers EVx2 and EVx4 is stocked in the mask chamber MSx2. As the mask M, a metal mask having a large number of openings formed is preferably used.

The film forming chambers EVx1 to EVx4 are chambers for forming a material layer on the surface of the substrate S. Here, the film forming chambers EVx1 and EVx3 are chambers having the same function (chambers capable of performing the same film forming process), and similarly, the film forming chambers EVx2 and EVx4 are also chambers having the same function. With this configuration, the film forming process in the first route of the film forming chamber EVx1 → EVx2 and the film forming process in the second route of the film forming chamber EVx3 → EVx4 can be performed in parallel.

The connecting chamber CNx has a function of connecting the unit CUx and the unit CUx + 1 and delivering the substrate S formed by the unit CUx to the subsequent unit CUx + 1. The connecting chamber CNx of the present embodiment is composed of a buffer chamber BCx, a swivel chamber TCx, and a pass chamber PSx in this order from the upstream side. As will be described later, such a configuration of the connecting chamber CNx is a preferable configuration from the viewpoint of increasing the productivity of the film forming apparatus and enhancing the usability. However, the configuration of the connecting chamber CNx is not limited to this, and the connecting chamber CNx may be configured only by the buffer chamber BCx or the pass chamber PSx.

The buffer chamber BCx is a chamber for transferring the substrate S between the transfer robot RRx in the unit CUx and the transfer robot RCx in the connecting chamber CNx. The buffer chamber BCx can be used with a plurality of substrates S when there is a difference in processing speed between the unit CUx and the unit CUx + 1 in the subsequent stage, or when the substrate S cannot flow normally due to a trouble on the downstream side. By temporarily accommodating it, it has a function of adjusting the carry-in speed and the carry-in timing of the substrate S. By providing the buffer chamber BCx having such a function in the connecting chamber CNx, it is possible to realize high productivity and high flexibility corresponding to the laminated film formation of various layer configurations. For example, in the buffer chamber BCx, a multi-stage board storage shelf (also called a cassette) that can store a plurality of boards S while maintaining a horizontal state in which the surface to be processed of the board S faces downward in the direction of gravity, and a board. An elevating mechanism for raising and lowering the board storage shelf is provided in order to align the stage for loading or unloading S with the transport position.

The swivel chamber TCx is a chamber for rotating the direction of the substrate S by 180 degrees. In the swivel chamber TCx, a transfer robot RCx that transfers the substrate S from the buffer chamber BCx to the pass chamber PSx is provided. When the upstream end of the board S is called the "rear end" and the downstream end is called the "front end", the transfer robot RCx rotates 180 degrees while supporting the board S received in the buffer chamber BCx. By handing over to the pass chamber PSx, the front end and the rear end of the substrate S are exchanged between the buffer chamber BCx and the pass chamber PSx. As a result, the orientation when the substrate S is carried into the film forming chamber is the same for the upstream unit CUx and the downstream unit CUx + 1, so that the scanning direction of the film formation and the orientation of the mask M with respect to the substrate S can be changed. It can be matched in each unit CUx. With such a configuration, it is possible to align the directions in which the masks M are installed in the mask chambers MSx1 to MSx2 in each unit CUx, and the management of the masks M can be simplified and the usability can be improved.

The pass chamber PSx is a chamber for transferring the substrate S between the transfer robot RCx in the connecting chamber CNx and the transfer robot RRx + 1 in the unit CUx + 1 on the downstream side. In the present embodiment, the alignment of the substrate S and the film thickness of the film formed on the substrate S are measured in the pass chamber PSx. In this way, by arranging the alignment mechanism and the film thickness measuring unit in the same chamber and measuring the film thickness after performing the alignment, it is possible to improve the position accuracy of the film thickness measuring portion on the substrate. As a result, it becomes possible to keep the film thickness measurement point in the substrate constant on each substrate, and it is possible to evaluate the film thickness with high accuracy.

A door (for example, a door valve or a gate valve) that can be opened and closed is provided between the film forming chambers EVx1 to EVx4, the mask chambers MSx1 to MSx2, the transport chamber TRx, the buffer chamber BCx, the swivel chamber TCx, and the pass chamber PSx. It may be a structure that is always open.

<Vacuum vapor deposition equipment>
FIG. 2 schematically shows the configuration of the vacuum vapor deposition apparatus 200 provided in the film forming chambers EVx1 to EVx4.

The vacuum vapor deposition apparatus 200 includes a mask holder 201 that holds the mask M, a substrate holder 202 that holds the substrate S, an evaporation source unit 203, a moving mechanism 204, a film formation rate monitor 205, and a film formation control unit 206. The mask holder 201, the substrate holder 202, the evaporation source unit 203, the moving mechanism 204, and the film formation rate monitor 205 are provided in the vacuum chamber 207. The vacuum vapor deposition apparatus 200 moves at least one of the mask holder 201 and the substrate holder 202 to align the mask M held by the mask holder 201 and the substrate S held by the substrate holder 202 (not shown). It also has a position adjustment mechanism (alignment mechanism).

The substrate S is placed on the upper surface of the mask M held in a horizontal state with the surface to be processed facing down. An evaporation source unit 203 is provided below the mask M. The evaporation source unit 203 generally includes a container (crucible) for accommodating the film-forming material, a heater for heating the film-forming material in the container, and the like. Further, if necessary, the evaporation source unit 203 may be provided with a reflector, a heat transfer member, a shutter, or the like for increasing the heating efficiency. The moving mechanism 204 is a means for moving (scanning) the evaporation source unit 203 in parallel with the surface to be processed of the substrate S. In the present embodiment, the one-axis movement mechanism 204 is used, but a two-axis or more movement mechanism may be used. In the present embodiment, the substrate S is placed on the upper surface of the mask M, but if the substrate S and the mask M are sufficiently in close contact with each other, the substrate S is not placed on the upper surface of the mask M. You may. Further, in the present embodiment, a magnet (not shown) is brought close to the surface of the substrate S opposite to the surface to be processed, and the mask foil of the mask M is attracted by magnetic force to improve the adhesion of the mask M to the substrate S. I'm raising it. Further, although the evaporation source unit 203 is shown as one in FIG. 2, a plurality of evaporation source units or containers may be arranged side by side and moved as a unit. According to such a configuration, different materials can be accommodated and evaporated for each evaporation source unit or container, and a mixed film or a laminated film can be formed.

The film formation rate monitor 205 is a sensor for monitoring the film formation rate of the thin film formed on the substrate S. The film forming rate monitor 205 has a crystal oscillator that is arranged near the surface to be processed of the substrate S and moves together with the evaporation source unit 203, and the film forming material is deposited on the surface of the crystal oscillator. Based on the amount of change in the resonance frequency (natural frequency) due to (given mass), the film formation rate (deposited rate) [Å / s], which is the amount of adhesion of the film-forming material per unit time, is estimated.

The film formation control unit 206 adjusts the film thickness time [s] according to the film thickness rate [Å / s] obtained by the film thickness monitor 205 and the film thickness value evaluated by the film thickness measurement unit described later. By doing so, the film thickness of the thin film formed on the substrate S is controlled to be a target value. The film formation time is adjusted by changing the scanning speed of the evaporation source unit 203 by the moving mechanism 204. In the present embodiment, the film thickness is controlled by adjusting the film forming time (adjusting the scanning speed), but the heater temperature of the evaporation source unit 203 is controlled as is generally performed in a conventional vacuum deposition apparatus. The amount of evaporation of the material (the amount of ejection) may be controlled by adjustment, the shutter opening degree of the evaporation source unit 203, or the like. Further, the film forming control unit 206 may perform the adjustment of the film forming time and the adjustment of the evaporation amount in combination. That is, the film formation control unit 206 may be controlled to adjust at least one of the scanning speed, the heater temperature, and the shutter opening degree of the evaporation source unit 203.

<Pass room alignment mechanism>
FIG. 3 is a cross-sectional view schematically showing the configuration of the pass chamber PSx. FIG. 3 corresponds to the AA cross section of FIG.

The pass chamber PSx is provided with an alignment mechanism for aligning the substrate S. The substrate S transported via the transport chamber TRx and the swivel chamber TCx has position variation due to the position accuracy of the robot used for transport and the like. In the present embodiment, this misalignment can be suppressed by the alignment mechanism provided in the pass chamber PSx. The alignment mechanism is roughly the substrate tray 301 installed inside the vacuum chamber 300, the XYθ drive device 302 for driving the substrate tray 301 in the X-axis direction, the Y-axis direction, and the θ direction, and the vacuum chamber 300. It has a camera 305 for photographing the substrate S (alignment mark 304) through a window 303 provided on the bottom surface, and an alignment control unit 306. The camera 305 and the alignment control unit 306 correspond to the position acquisition means for acquiring the position information of the substrate S arranged inside the vacuum chamber 300 with respect to the vacuum chamber 300. Based on the acquired position information, the XYθ drive device 302 as a moving mechanism moves the substrate S relative to the vacuum chamber 300. In the present embodiment, the pass chamber PSx is configured to accommodate only one substrate, but a plurality of substrates may be accommodated.

When the substrate S is placed on the substrate tray 301 by the transfer robot RCx in the swivel chamber TCx, the alignment mark 304 of the substrate S is photographed by the camera 305. The alignment control unit 306 calculates the amount of misalignment (ΔX, ΔY) and the amount of rotation (Δθ) of the substrate S with respect to the reference position by detecting the position and inclination of the alignment mark 304 from the image captured from the camera 305. do. Then, the alignment control unit 306 controls the XYθ drive device 302 and corrects the positional deviation and the rotational deviation of the substrate S to align the substrate S. A reference mark indicating a reference position may be provided in the pass chamber PSx. Then, when the alignment mark 304 of the substrate S is photographed by the camera 305, the position deviation amount and the rotation deviation amount of the substrate S with respect to the reference position may be acquired by also photographing the reference mark.

When forming a film on the substrate S in the film forming chambers EVx1 to EVx4, it is necessary to align the substrate S and the mask M with high accuracy. Therefore, in the film forming chambers EVx1 to EVx4, it is necessary to perform ultra-high precision positioning called fine alignment with respect to the substrate S. By performing rough alignment of the substrate S in the pass chamber PSx in advance as in the present embodiment, the initial deviation amount when the substrate S is carried into the film formation chamber of the unit CUx + 1 in the subsequent stage can be suppressed to a small size. Therefore, the time required for fine alignment performed in the film forming chamber can be shortened. Further, by performing (rough) alignment before the film thickness measurement, it is possible to improve the position accuracy of the film thickness measurement location on the substrate. As a result, it becomes possible to keep the film thickness measurement point in the substrate constant on each substrate, and it is possible to evaluate the film thickness with high accuracy.

FIG. 4 shows an example of the alignment mark 304 on the substrate S. In this example, alignment marks 304 are attached to the two corners on the rear end side of the substrate S, respectively. However, the arrangement of the alignment mark 304 is not limited to this, and may be arranged at, for example, a corner on the front end side, may be arranged at two diagonal corners or all four corners, or may be arranged along an edge instead of a corner. It may be placed in a position. The number of alignment marks 304 is also arbitrary. Alternatively, instead of the alignment mark 304 on the substrate S, the edge or corner of the substrate S may be detected.

<Film thickness measuring unit>
As shown in FIG. 3, the pass chamber PSx is provided with a film thickness measuring unit 310 for measuring the film thickness of the film formed on the substrate S. Although only one film thickness measuring unit 310 is shown in FIG. 3, a plurality of film thickness measuring units may be arranged. By evaluating a plurality of locations at once, it is possible to obtain information on the variation in film thickness in the substrate surface and to evaluate a plurality of types of films formed in a plurality of film forming chambers at once. ..

The film thickness measuring unit 310 is a sensor that optically measures the film thickness, and in the present embodiment, a reflection spectroscopic film thickness meter is used. The film thickness measuring unit 310 is roughly composed of a film thickness evaluation unit 311 and a sensor head 312, and an optical fiber 313 connecting the sensor head 312 and the film thickness evaluation unit 311. The sensor head 312 is arranged below the substrate tray 301 in the vacuum chamber 300 and is connected to the optical fiber 313 via a vacuum flange 314 attached to the bottom surface of the vacuum chamber 300. The sensor head 312 has a function of setting an irradiation area of light guided via the optical fiber 313 to a predetermined area, and an optical fiber and an optical component such as a pinhole or a lens can be used.

FIG. 5 is a block diagram of the film thickness measuring unit 310. The film thickness evaluation unit 311 includes a light source 320, a spectroscope 321 and a measurement control unit 322. The light source 320 is a device that outputs measurement light, and for example, a deuterium lamp, a xenon lamp, a halogen lamp, or the like is used. As the wavelength of light, a range of 200 nm to 1 μm can be used. The spectroscope 321 is a device that disperses the reflected light input from the sensor head 312 and measures the spectrum (intensity for each wavelength). For example, the spectroscope 321 is composed of a spectroscopic element (grating, prism, etc.) and a detector that performs photoelectric conversion. Will be done. The measurement control unit 322 is a device that controls the light source 320 and calculates the film thickness based on the reflection spectrum.

The measurement light output from the light source 320 is guided to the sensor head 312 via the optical fiber 313 and projected from the sensor head 312 to the substrate S. The light reflected by the substrate S is input from the sensor head 312 to the spectroscope 321 via the optical fiber 313. At this time, the light reflected by the surface of the thin film on the substrate S and the light reflected by the interface between the thin film and its underlying layer interfere with each other. By being affected by the interference and absorption by the thin film in this way, the reflection spectrum is affected by the optical path length difference, that is, the film thickness. The film thickness of the thin film can be measured by analyzing the reflection spectrum with the measurement control unit 322. Since the above-mentioned reflection spectroscopic film thickness evaluation can be performed with high accuracy in a short time even for the evaluation of an organic film having a thickness of several nm to several hundred nm, the organic layer of the organic EL element can be evaluated. This is a preferable method for evaluating. Here, as the material of the organic layer, a hole transport material such as αNPD: α-naphthylphenylbiphenyldiamine, a light emitting material such as Ir (ppy) 3: iridium-phenylpyrimidine complex, and Alq3: tris (8-quinolinolato) aluminum. And an electron transporting material such as Liq: 8-hydroxyquinolinolato-lithium). Furthermore, it can be applied to the above-mentioned mixed film of organic materials.

FIG. 4 shows an example of a thin film for measuring the film thickness formed on the substrate S. On the substrate S, a position that does not overlap with the area where the display panel 340 is formed (in the illustrated example, the front end portion of the substrate S).
Is provided with a film thickness measurement area 330. During the film formation process in each film formation chamber, the film thickness measurement area 330 is formed by forming a film at a predetermined position in the film thickness measurement area 330 in parallel with the film formation on the display panel 340. A thin film for measuring the film thickness (hereinafter referred to as a measuring patch 331; sometimes referred to as a measuring piece or an evaluation organic film) is formed inside. This can be easily realized by forming an opening for the measurement patch 331 in advance in the mask M used in each film forming chamber.

The film thickness measurement area 330 is set to an area where a plurality of measurement patches 331 can be formed, and it is preferable to change the formation position of the measurement patch 331 for each layer whose film thickness is to be measured. That is, when it is desired to measure the film thickness of a film (single film or a laminated film in which a plurality of films are laminated) formed in one film forming chamber, the film forming chamber for measurement patch 331 is also used in one film forming chamber. If you want to deposit only the film to be formed (single film or laminated film) and measure the thickness of the laminated film formed through multiple film forming chambers, you also want to measure the lamination on the measurement patch 331. It is advisable to form the same laminated film as the film. By making the measurement patch 331 different for each layer to be measured in this way, accurate measurement of the film thickness can be realized. As described above, in the configuration in which the film thickness is measured after alignment, the accuracy of the film thickness measurement position is high, so that each measurement patch 331 can be made smaller and can be arranged at a high density. Become. As a result, the area of the film thickness measurement area 330 in the substrate can be reduced, and the number of display panels 340 formed on the substrate can be increased.

<Highly accurate control of film thickness>
As described above, the vacuum vapor deposition apparatus 200 in each film forming chamber is controlled so that the film forming rate of the film formed by using the film forming rate monitor 205 becomes the target film forming rate. However, the film formation rate monitor 205 does not directly measure the thickness of the film formed on the substrate S, but indirectly measures the film formation rate by a crystal oscillator arranged at a position different from the substrate S. It's just a thing. Therefore, due to various error factors such as the amount of material deposited on the crystal oscillator and the temperature of the crystal oscillator, the film thickness of the film deposited on the crystal oscillator of the film formation rate monitor 205 and the film of the film deposited on the substrate S The thickness may be different, or an error may occur in the measured value itself of the film formation rate monitor 205. An error in measuring the film thickness of the film formed on the substrate S by the film formation rate monitor 205 causes variation in the film thickness, which leads to a decrease in panel quality and a decrease in yield. Therefore, countermeasures are required.

Therefore, in the present embodiment, the thickness of the thin film formed on the substrate S is directly measured by the film thickness measuring unit 310, and the film forming conditions of each film forming chamber are controlled based on the measurement result, thereby achieving high accuracy. Achieves excellent film thickness control. When controlling the film thickness conditions, both the value of the film thickness monitor 205 and the measurement result of the film thickness measuring unit 310 may be used. Since the measurement principle is different between the film formation rate monitor 205 that evaluates the amount of film deposited on the crystal transducer and the film thickness measuring unit 310 that optically evaluates the film thickness on the substrate S, disturbance, environment, and film thickness state Behavior is different with respect to fluctuations in. Therefore, by using a plurality of evaluation means having different measurement principles in combination, more reliable film thickness control becomes possible.

FIG. 6 is a block diagram schematically showing the configuration of the film thickness control system. The film thickness control unit 350 transmits a control command to the film thickness control unit 206 of each film formation chamber based on the measurement result of the film thickness measurement unit 310. The methods for controlling the film forming conditions are roughly classified into feedback control and feedforward control. The feedback control is a control in which the film thickness control unit 350 adjusts the film thickness of the subsequent substrate Ss by controlling the film thickness conditions of the film formation chamber on the upstream side of the film thickness measurement unit 310. In the feed-forward control, the film thickness control unit 350 adjusts the film thickness of the substrate S measured by the film thickness measuring unit 310 by controlling the film thickness conditions of the film forming chamber on the downstream side of the film thickness measuring unit 310. It is control. The film thickness control unit 350 may perform either feedback control or feedforward control, or both may be controlled. Further, the control method may be different for each film forming chamber or each unit. The film forming conditions to be controlled include, for example, the film forming time, the scanning speed of the evaporation source unit 203, the heater temperature of the evaporation source unit 203, the shutter opening degree of the evaporation source unit 203, and the like. The film thickness control unit 350 may control any one of these film formation conditions, or may control a plurality of film thickness control conditions. In this embodiment, the scan speed is controlled.

<Manufacturing method of electronic devices>
Next, an example of a method for manufacturing an electronic device will be described. Hereinafter, the configuration and manufacturing method of the organic EL display device will be illustrated as an example of the electronic device.

First, the organic EL display device to be manufactured will be described. 7 (a) is an overall view of the organic EL display device 50, FIG. 7 (b) is a view showing a cross-sectional structure of one pixel, and FIG. 7 (c) is an enlarged view of a red layer.

As shown in FIG. 7A, a plurality of pixels 52 including a plurality of light emitting elements are arranged in a matrix in the display area 51 of the organic EL display device 50. Although details will be described later, each of the light emitting elements has a structure including an organic layer sandwiched between a pair of electrodes. The pixel referred to here refers to the smallest unit that enables the display of a desired color in the display area 51. In the case of a color organic EL display device, the pixel 52 is composed of a combination of a plurality of sub-pixels of the first light emitting element 52R, the second light emitting element 52G, and the third light emitting element 52B, which emit light differently from each other. The pixel 52 is often composed of a combination of three types of sub-pixels of a red (R) light emitting element, a green (G) light emitting element, and a blue (B) light emitting element, but is not limited thereto. The pixel 52 may include at least one type of sub-pixel, preferably includes two or more types of sub-pixels, and more preferably includes three or more types of sub-pixels. As the sub-pixels constituting the pixel 52, for example, a combination of four types of sub-pixels of a red (R) light emitting element, a green (G) light emitting element, a blue (B) light emitting element, and a yellow (Y) light emitting element may be used. A combination of a yellow (Y) light emitting element, a cyan (C) light emitting element, and a magenta (M) light emitting element may be used.

FIG. 7B is a schematic partial cross-sectional view taken along the line AB of FIG. 7A. The pixel 52 has a first electrode (anode) 54, a hole transport layer 55, one of a red layer 56R, a green layer 56G, and a blue layer 56B, an electron transport layer 57, and a second electrode 52 on the substrate 53. It has a plurality of sub-pixels composed of an electrode (cathode) 58 and an organic EL element including the electrode (cathode) 58. Of these, the hole transport layer 55, the red layer 56R, the green layer 56G, the blue layer 56B, and the electron transport layer 57 correspond to the organic layer. The red layer 56R, the green layer 56G, and the blue layer 56B are formed in a pattern corresponding to a light emitting element (sometimes referred to as an organic EL element) that emits red, green, and blue, respectively. Further, the first electrode 54 is formed separately for each light emitting element. The hole transport layer 55, the electron transport layer 57, and the second electrode 58 may be formed in common across the plurality of light emitting elements 52R, 52G, and 52B, or may be formed for each light emitting element. That is, as shown in FIG. 7B, the hole transport layer 55 is formed as a common layer over the plurality of sub-pixel regions, and the red layer 56R, the green layer 56G, and the blue layer 56B are separated for each sub-pixel region. The electron transport layer 57 and the second electrode 58 may be formed as a common layer over a plurality of sub-pixel regions. An insulating layer 59 is provided between the first electrodes 54 in order to prevent a short circuit between the first electrodes 54 that are close to each other. Further, since the organic EL layer is deteriorated by moisture and oxygen, a protective layer 60 for protecting the organic EL element from moisture and oxygen is provided.

In FIG. 7B, the hole transport layer 55 and the electron transport layer 57 are shown as one layer, but they are formed of a plurality of layers having a hole block layer and an electron block layer depending on the structure of the organic EL display element. May be done. Further, between the first electrode 54 and the hole transport layer 55, an energy band structure capable of smoothly injecting holes from the first electrode 54 into the hole transport layer 55 is provided. The hole injection layer having the hole may be formed. Similarly, an electron injection layer may be formed between the second electrode 58 and the electron transport layer 57.

Each of the red layer 56R, the green layer 56G, and the blue layer 56B may be formed by a single light emitting layer, or may be formed by laminating a plurality of layers. FIG. 7C shows an example in which the red layer 56R is formed by two layers. For example, the red light emitting layer may be the upper layer 56R2, and the hole transport layer or the electron block layer may be the lower layer 56R1. Alternatively, the red light emitting layer may be the lower layer 56R1 and the electron transport layer or the hole block layer may be the upper layer 56R2. By providing the layer on the lower side or the upper side of the light emitting layer in this way, there is an effect of improving the color purity of the light emitting element by adjusting the light emitting position in the light emitting layer and adjusting the optical path length. Although an example of the red layer 56R is shown in FIG. 7C, the same structure may be adopted for the green layer 56G and the blue layer 56B. Further, the number of layers may be two or more. Further, layers of different materials such as a light emitting layer and an electron block layer may be laminated, or layers of the same material may be laminated, for example, two or more light emitting layers may be laminated.

Next, an example of a method for manufacturing an organic EL display device will be specifically described. Here, it is assumed that the red layer 56R, the green layer 56G, and the blue layer 56B all consist of a single light emitting layer.

First, a substrate 53 on which a circuit (not shown) for driving an organic EL display device and a first electrode 54 are formed is prepared. The material of the substrate 53 is not particularly limited, and may be made of glass, plastic, metal, or the like. In the present embodiment, as the substrate 53, a substrate in which a polyimide film is laminated on a glass substrate is used.

A resin layer such as acrylic or polyimide is coated on the substrate 53 on which the first electrode 54 is formed by bar coating or spin coating, and the resin layer is opened in the portion where the first electrode 54 is formed by a lithography method. Is patterned to form an insulating layer 59. This opening corresponds to a light emitting region where the light emitting element actually emits light.

The substrate 53 in which the insulating layer 59 is patterned is carried into the first film forming chamber, and the hole transport layer 55 is formed as a common layer on the first electrode 54 in the display region. The hole transport layer 55 is formed by using a mask in which openings are formed for each display region 51 which is finally a panel portion of each organic EL display device. The mask used in the first film forming chamber is provided with an opening in a portion corresponding to the film thickness measurement area 330, which is different from the portion corresponding to the area where the display panel 340 of the substrate 53 is formed. There is. This opening is formed at a position different from the mask used in other film forming chambers in the portion corresponding to the film thickness measurement area 330. As a result, the measurement patch 331 in which only the hole transport layer 55 is formed can be formed in the film thickness measurement area 330.

Next, the substrate 53 on which the hole transport layer 55 is formed is carried into the second film forming chamber. Align the substrate 53 with the mask, place the substrate on the mask, and place the red-emitting element of the substrate 53 on the hole transport layer 55 (region that forms the red sub-pixels). The red layer 56R is formed on the surface. Here, the mask used in the second film forming chamber has a height in which openings are formed only in a plurality of regions that are red sub-pixels among a plurality of regions on the substrate 53 that are sub-pixels of the organic EL display device. It is a fine mask. As a result, the red layer 56R is formed only in the region that becomes the red sub-pixel among the regions that become the plurality of sub-pixels on the substrate 53. In other words, the red layer 56R is not formed in the region that becomes the blue sub-pixel or the region that becomes the green sub-pixel among the regions that become the plurality of sub-pixels on the substrate 53, and the red sub-pixel is not formed. A film is formed in the region. The mask used in the second film forming chamber is provided with an opening in a portion corresponding to the film thickness measurement area 330, which is different from the portion corresponding to the area where the display panel 340 of the substrate 53 is formed. There is. An opening is formed at a position different from the mask used in other film forming chambers in the portion corresponding to the film thickness measurement area 330. As a result, a measurement patch 331 in which only the red layer 56R is formed can be formed in the film thickness measurement area 330.

Similar to the film formation of the red layer 56R, the green layer 56G is formed in the third film forming chamber, and the blue layer 56B is further formed in the fourth film forming chamber. After the film formation of the red layer 56R, the green layer 56G, and the blue layer 56B is completed, the electron transport layer 57 is formed on the entire display region 51 in the fifth film forming chamber. The electron transport layer 57 is formed as a layer common to the three color layers 56R, 56G, and 56B.

The substrate on which the electron transport layer 57 is formed is moved to the sixth film forming chamber, and the second electrode 58 is formed. In the present embodiment, each layer is formed by vacuum vapor deposition in the first to seventh film forming chambers. However, the present invention is not limited to this, and for example, the film formation of the second electrode 58 in the seventh film formation chamber may be formed by sputtering. After that, the substrate on which the second electrode 68 is formed is moved to a sealing device to form a protective layer 60 by plasma CVD (sealing step), and the organic EL display device 50 is completed. Although the protective layer 60 is formed by the CVD method here, the present invention is not limited to this, and the protective layer 60 may be formed by the ALD method or the inkjet method.

From the time when the substrate 53 in which the insulating layer 59 is patterned is carried into the film forming apparatus until the film formation of the protective layer 60 is completed, when the substrate 53 is exposed to an atmosphere containing moisture or oxygen, a light emitting layer made of an organic EL material is formed. It may be deteriorated by moisture and oxygen. Therefore, the loading and unloading of the substrate between the film forming chambers is performed in a vacuum atmosphere or an inert gas atmosphere.

<Example of film thickness control>
A specific example of film thickness control by the film thickness control system will be described. Here, as shown in FIG. 8, a laminating process in which a first layer as a common layer is formed and then a second layer and a third layer are formed side by side on the film is taken as an example. For example, in the case of the organic EL display device shown in FIG. 7B, the hole transport layer 55 corresponds to the first layer, the red layer 56R corresponds to the second layer, and the green layer 56G corresponds to the first layer. It corresponds to the third layer.

First, a comparative example is shown with reference to FIG. FIG. 9 is a time chart of a comparative example, and the reference numerals in the drawings represent the cluster type unit, the film forming chamber, the connecting chamber, the substrate transfer robot, and the like shown in FIG.

In the comparative example, both the first layer and the second layer are formed in the same unit CU1. That is, after the first layer is formed on the substrate S1 in the film forming chamber EV11, the substrate S1 is conveyed from the film forming chamber EV11 to EV12 by the transfer robot RR1. Then, after the second layer is formed on the first layer in the film forming chamber EV12, the substrate S1 is conveyed from the film forming chamber EV12 to the buffer chamber BC1 by the transfer robot RR1. Subsequently, the substrate S1 is transported from the buffer chamber BC1 to the pass chamber PS1 by the transfer robot RC1 in the connecting chamber CN1, and the substrate S1 is aligned in the pass chamber PS1. After that, the film thickness of the first layer is measured by the film thickness measuring unit 310 in the pass chamber PS1. When the film thickness of the first layer is different from the target value, the film thickness control unit 350 performs feedback control to the film formation chamber EV11 in the unit CU1 and adjusts the film thickness conditions for the subsequent substrate S2. On the other hand, the substrate S1 for which the film thickness measurement has been completed is conveyed from the pass chamber PS1 to the film formation chamber EV21 of the second unit CU2 by the transfer robot RR2, and the third layer is formed.

By performing such feedback control, the film thickness of the first layer in the subsequent substrate S2 can be corrected to an appropriate value. However, in the case of such a procedure, it is difficult to increase the throughput of the apparatus because the film formation of the first layer on the next substrate cannot be started without waiting for the film thickness measurement of the first layer of the preceding substrate. ..

Therefore, in this embodiment, the film forming procedure is set so that the first layer and the second layer are formed in different units, and the film of the first layer is formed in the connecting chamber immediately after the first layer is formed. A configuration is adopted in which the thickness is measured and the feedback control of the first layer is performed based on the measurement result.

This embodiment will be described with reference to FIG. FIG. 10 is a time chart of an embodiment. First, the first layer is formed in the first film forming chamber EV11 in the first unit CU1, and the substrate S1 is conveyed from the film forming chamber EV11 to the buffer chamber BC1 by the transfer robot RR1. That is, the substrate S1 in which the film formation of the first layer (common layer) in the first film formation chamber EV11 is completed is conveyed to the connecting chamber without passing through another film formation chamber. In the present embodiment, the first unit CU1 is provided with other film forming chambers (deposition chamber EV12, film forming chamber EV14) on the downstream side in the flow direction of the substrate of the first film forming chamber EV11. Although it is possible to form a film of another layer in the film forming chamber of the above, in the present embodiment, even in such an apparatus configuration, the substrate S1 is downstream without passing through another film forming chamber. The film is transported to the connecting chamber of the above, and the film forming process is not performed in the other film forming chambers (deposition chamber EV12, film forming chamber EV14). Subsequently, the substrate S1 is transported from the buffer chamber BC1 to the pass chamber PS1 by the transfer robot RC1 in the connecting chamber CN1, and the substrate S1 is aligned in the pass chamber PS1. Then, in the pass chamber PS1, the film thickness measuring unit 310 measures the film thickness of the first layer. When the film thickness of the first layer is different from the target value, the film thickness control unit 350 performs feedback control to the first film forming chamber EV11 in the first unit CU1. For example, if the film thickness of the first layer is smaller than the target value, the scanning speed of the first film forming chamber EV11 is reduced, and conversely, if the film thickness of the first layer is larger than the target value, the first formation is performed. The scanning speed of the membrane chamber EV11 may be increased. On the other hand, the substrate S1 for which the film thickness measurement has been completed is conveyed from the pass chamber PS1 to the second film forming chamber EV21 of the second unit CU2 by the transfer robot RR2, and the film formation of the second layer is performed. After that, the substrate S1 is conveyed from the film forming chamber EV21 to EV22 by the transfer robot RR2, and the film formation of the third layer is performed. When the second film is formed on the substrate S1 in the second film forming chamber EV21 or when the third film is formed in the third film forming chamber EV22, the measurement is performed in the pass chamber PS1. Feed-forward control may be performed to control the film forming conditions of the second film forming chamber EV21 and the third film forming chamber EV22 based on the thickness of the first layer formed. As a result, even if the film thickness of the first layer of the substrate S1 is different from the target value, each light emitting element (each sub-pixel) can be adjusted by adjusting the film thickness of the film formed after the first layer. ), The color purity of the light emitting element can be improved.

According to the feedback control of the present embodiment as described above, the film thickness of the first layer is measured and the feedback is performed immediately after the film formation of the first layer is performed. The timing of starting the film formation of the substrate S2 can be accelerated. Therefore, the throughput of the device can be improved and high productivity can be realized.

The examples described here are merely examples. For example, the unit for forming the film of the first layer and the unit for forming the film of the second layer do not have to be adjacent to each other via the connecting chamber, and are separated as in the unit CU1 and the unit CU3 of FIG. You may. That is, it is sufficient that the connecting chamber in which the film thickness measuring unit 310 is installed is arranged between the unit on the upstream side (for example, CU1) and the unit on the downstream side (for example, CU3). However, even in that case, it is desirable from the viewpoint of throughput that the film thickness measuring unit 310 is installed in the connecting chamber connected immediately after the unit for forming the first layer.

<Advantage>
According to the film forming apparatus (electronic device manufacturing apparatus) of the present embodiment, since the means for adjusting the film thickness conditions based on the measurement result of the film thickness measuring unit 310 is provided, the film thickness rate monitor 205 using the crystal oscillator is provided. It is possible to correct the error and realize highly accurate film thickness control. In addition, the film thickness measuring unit 3
By arranging the 10 in the connecting room instead of in the cluster type unit, it is possible to suppress an increase in the size of the device (increase in the installation area). In addition, the film thickness can be measured by using the time that the substrate stays in the connecting chamber for the transfer of the substrate between the units, so that the film thickness measurement affects the productivity (throughput) of the entire device. It can be made as small as possible.

Further, when a plurality of layers are laminated, the film thickness of the lower first layer can be controlled with high accuracy. This is extremely advantageous when forming a common layer that requires accuracy. In general, a common layer such as a hole transport layer is often formed thicker than a light emitting layer formed by painting each sub-pixel on the common layer. For example, the common layer is formed with a film thickness of about 500 to 1500 Å, and each of the red, blue, and green layers (a single light emitting layer of each color or a layer in which the light emitting layer of each color and the adjusting layer are combined) is a film of about 100 to 500 Å. Formed in thickness. As described above, the common layer is often formed with a film thickness of about 3 to 5 times that of the red, blue, and green layers. When the common layer is formed thick in this way, when the film thickness of the common layer is different from the target value, the feedforward control is performed as described above, and the red color formed on the common layer, Even if an attempt is made to adjust the overall film thickness by adjusting the film thickness of each of the blue and green coating layers, the adjustment may not be possible depending on the deviation of the film thickness of the common layer from the target value. Further, since it is necessary to adjust the film thickness of each of the red, blue, and green coating layers, the control becomes complicated and the tact time of the entire device may increase in some cases. In such a case, as in the present embodiment, the film thickness is measured immediately after the film formation of the common layer is completed, and feedback control is performed for the film formation of the common layer based on the measurement result. By the subsequent feedforward control to the film forming chamber, it is possible to reduce the number of substrates that cannot be adjusted and become defective substrates, and it is possible to improve the yield.

<Others>
The above embodiment merely shows a specific example of the present invention. The present invention is not limited to the configuration of the above embodiment, and various modifications can be taken. For example, the number of cluster type units provided in the electronic device manufacturing apparatus may be any number as long as it is two or more. Further, the configuration of each cluster type unit is also arbitrary, and the number of film forming chambers and the number of mask chambers may be appropriately set according to the application. In the above embodiment, the apparatus configuration capable of forming a film on two routes of the film forming chamber EVx1 → EVx2 and the film forming chamber EVx3 → EVx4 is shown, but the configuration may be one route or three or more routes. .. For example, in the configuration of FIG. 1, two stages may be arranged in one film forming chamber, and a mask and a substrate may be set on the other stage while the film forming process is being performed on one stage. As a result, four routes can be realized in the configuration of FIG. 1, and productivity can be further improved. In the film forming apparatus having a plurality of routes in this way, by adopting the method of providing the film thickness measuring unit in the connecting chamber, it is not necessary to provide the film thickness measuring unit for each route, so that the film thickness measurement is performed. The number of parts can be reduced, and the cost and device size can be reduced. In the above embodiment, the film thickness measuring unit is arranged in the pass chamber, but the film thickness measuring unit may be arranged anywhere in the connecting chamber. Further, a chamber for measuring the film thickness may be provided in the connecting chamber. The film thickness measuring unit does not have to be provided in all the connecting chambers of the electronic device manufacturing apparatus, and may be provided only in some connecting chambers. That is, the film thickness measuring unit may be provided only at a place where highly accurate control of the film thickness is required. In the above embodiment, a reflection spectroscopic film thickness meter is used, but another film thickness meter (for example, a spectroscopic ellipsometer) may be used.

CU1, CU2, CU3: Cluster type units EV11 to EV14, EV21 to EV24, EV31 to EV34: Film formation chamber RR1, RR2, RR3: Transfer robot (transfer means)
CN1, CN2: Connecting chamber PS1, PS2: Pass chamber S: Substrate 310: Film thickness measuring unit 350: Film thickness control unit

This disclosure is
A cluster type having a first transport means and a plurality of film forming chambers including a first film forming chamber arranged around the first transport means and forming a first film with respect to a substrate. The first unit and
A plurality of film formations including a second transfer means and a second film formation chamber arranged around the second transfer means and forming a second film which is arranged around the second transfer means and overlaps the first film with respect to the substrate. A cluster-type second unit having a room, and
A connecting chamber arranged in the transport path of the substrate from the first unit to the second unit and connecting two cluster type units, and a connecting chamber.
A first measuring unit, which is provided in at least a part of the connecting chamber and measures the thickness of a film formed on the substrate,
A control unit for controlling the film forming conditions of the first film forming chamber based on the thickness of the first film measured by the first measuring unit is provided.
The film forming apparatus is included.

Claims (21)

A cluster type having a first transport means and a plurality of film forming chambers including a first film forming chamber arranged around the first transport means and forming a first layer on a substrate. The first unit and
A second layer is formed by superimposing the second layer on the substrate which is arranged around the second transport means and on which the first layer is formed. A cluster-type second unit having a plurality of film forming chambers including a film chamber, and
A connecting chamber arranged between the first unit and the second unit and connecting adjacent cluster type units,
In a film forming apparatus equipped with
A film thickness measuring unit that is provided in at least a part of the connecting chamber and measures the film thickness of the film formed on the substrate.
A control unit that controls the film forming conditions of the first film forming chamber based on the film thickness of the first layer measured by the film thickness measuring unit.
A film forming apparatus comprising. The film forming apparatus according to claim 1, wherein the film thickness measuring unit optically measures the film thickness of the film formed on the substrate. The control unit feedback-controls the film formation conditions of the first film formation chamber based on the film thickness of the first layer measured by the film thickness measurement unit.
A claim, wherein at least a part of the film thickness measuring unit is arranged in a connecting chamber that connects the first unit and a cluster type unit on the downstream side adjacent to the first unit. The film forming apparatus according to 1 or 2. The first transporting means is characterized in that the substrate on which the first layer has been formed in the first film forming chamber is conveyed to the connecting chamber without passing through another film forming chamber. The film forming apparatus according to any one of claims 1 to 3. The first layer is a common layer in which a plurality of layers formed in different film forming chambers are arranged side by side on the first layer.
The film forming apparatus according to any one of claims 1 to 4, wherein the second layer is the first layer to be formed among the plurality of layers. The first layer is a hole transport layer and
The film forming apparatus according to claim 5, wherein the plurality of layers include a red layer, a green layer, and a blue layer. The substrate includes a region where a plurality of types of sub-pixels are formed.
The first layer is a common layer commonly formed in a region on the substrate on which a plurality of types of sub-pixels are formed.
In the second layer, a second sub-pixel is formed without forming a film in a region on the substrate on which the first sub-pixel is formed among the regions where the plurality of types of sub-pixels are formed. The film forming apparatus according to any one of claims 1 to 4, wherein the film is formed on the first layer, and is the first layer formed on the first layer. The substrate includes a region where a plurality of types of sub-pixels are formed.
The first layer is a common layer commonly formed in a region on the substrate on which a plurality of types of sub-pixels are formed.
The second layer is a layer that is selectively formed only in a region on the substrate on which the same type of sub-pixels are formed among the regions in which the plurality of types of sub-pixels are formed. The film forming apparatus according to any one of claims 1 to 4, wherein the film is first formed on the layer 1. The first layer is a hole transport layer and
The film forming apparatus according to claim 7 or 8, wherein the second layer is any one of a red layer, a green layer, and a blue layer. During the film forming process in the first film forming chamber, a measuring piece is formed at a predetermined position on the substrate.
The film forming apparatus according to any one of claims 1 to 9, wherein the film thickness measuring unit measures the film thickness of the first layer using the measuring piece. The connecting chamber has an alignment mechanism for aligning the substrates.
The film-forming apparatus according to any one of claims 1 to 10, wherein the film thickness measuring unit measures the substrate after the alignment by the alignment mechanism is performed. The film forming apparatus according to any one of claims 1 to 11, wherein the first transport means and the second transport means are articulated robots. A device for manufacturing an electronic device having a plurality of pixels and manufacturing an electronic device in which each of the plurality of pixels includes a first sub-pixel and a second sub-pixel.
The first transport means and the region serving as the first sub-pixel and the region serving as the second sub-pixel of the region serving as the plurality of pixels on the substrate arranged around the first transport means. A cluster-type first unit having a plurality of film forming chambers including a first film forming chamber for forming a first layer with respect to the first layer.
The second transport means and the region serving as the second sub-pixel of the region serving as the plurality of pixels on the substrate arranged around the second transport means and on which the first layer is formed. Has a plurality of film forming chambers including a second film forming chamber for forming a second layer on the first layer in a region serving as the first sub-pixel without forming a film. The second cluster type unit and
A connecting chamber arranged between the first unit and the second unit and connecting adjacent cluster type units,
In the manufacturing equipment of the electronic device equipped with
A film thickness measuring unit that is provided in at least a part of the connecting chamber and measures the film thickness of the film formed on the substrate.
A control unit that controls the film forming conditions of the first film forming chamber based on the film thickness of the first layer measured by the film thickness measuring unit.
An electronic device manufacturing apparatus comprising. The second film forming chamber is superposed on the first layer only in the area of the plurality of pixels on the substrate on which the first layer is formed, which is the first sub-pixel. The electronic device manufacturing apparatus according to claim 13, wherein a second layer is formed. The electronic device manufacturing apparatus according to claim 13, wherein the film thickness measuring unit optically measures the film thickness of the film formed on the substrate. A step of forming a first layer on a substrate in a first film forming chamber in a cluster-type first unit in which a plurality of film forming chambers are arranged around a first transport means.
In the second film forming chamber in the cluster type second unit in which a plurality of film forming chambers are arranged around the second transport means, the first layer is formed on the substrate on which the first layer is formed. And the process of forming a second layer on top of
The first layer formed on the substrate by using a film thickness measuring unit in a connecting chamber arranged between the first unit and the second unit and connecting adjacent cluster type units. And the process of measuring the film thickness
A step of controlling the film forming conditions of the first film forming chamber based on the film thickness of the first layer measured by the film thickness measuring unit, and
A film forming method comprising. The process according to claim 16, wherein the measuring step is a step of optically measuring the film thickness of the first layer formed on the substrate by using the film thickness measuring unit. Membrane method. The first transporting means is characterized in that the substrate on which the first layer has been formed in the first film forming chamber is conveyed to the connecting chamber without passing through another film forming chamber. The film forming method according to claim 16 or 17. The substrate includes a region where a plurality of types of sub-pixels are formed.
The step of forming the first layer is a step of forming a common layer commonly formed in a region on the substrate on which a plurality of types of sub-pixels are formed.
In the step of forming the second layer, the second layer is not formed in the region where the first sub-pixel is formed among the regions on the substrate where the plurality of types of sub-pixels are formed. Any of claims 16 to 18, wherein the layer is formed in the region where the sub-pixels are formed, and is a step of forming the first layer to be formed on the first layer. The film forming method according to item 1. The step of forming the second layer is a layer that is selectively formed only in the region on the substrate on which the same type of sub-pixels are formed among the regions in which the plurality of types of sub-pixels are formed. The film forming method according to claim 19, wherein the step is a step of forming a layer to be first formed on the first layer. A method for manufacturing an electronic device, wherein the electronic device is manufactured by forming a plurality of films on the substrate by the film forming apparatus according to any one of claims 1 to 12.

Images