CN109722635B - Evaporation source device, film forming method, and method for manufacturing electronic device - Google Patents
Evaporation source device, film forming method, and method for manufacturing electronic device Download PDFInfo
- Publication number
- CN109722635B CN109722635B CN201810844797.1A CN201810844797A CN109722635B CN 109722635 B CN109722635 B CN 109722635B CN 201810844797 A CN201810844797 A CN 201810844797A CN 109722635 B CN109722635 B CN 109722635B
- Authority
- CN
- China
- Prior art keywords
- evaporation source
- crucible
- crucibles
- substrate
- vapor deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention provides an evaporation source device, a film forming method, and a method for manufacturing an electronic apparatus. The evaporation source device of the present invention includes: a plurality of crucibles including a first crucible and a second crucible, the plurality of crucibles containing an evaporation material; an anti-adhesion plate covering the first crucible and having an opening above the second crucible; and a movable evaporation source baffle plate that changes a position to set the second crucible in a shielded state or an opened state, the evaporation source device being characterized in that the evaporation source baffle plate overlaps with the adhesion preventing plate and the first crucible covered with the adhesion preventing plate when the evaporation source baffle plate sets the second crucible in an opened state.
Description
Technical Field
The invention relates to an evaporation source device, a film forming method, and a method for manufacturing an electronic apparatus.
Background
Organic electronic devices such as organic EL displays are manufactured through a vapor deposition process of depositing an organic material, a metal material, or the like. An evaporation source device used in a vapor deposition process includes a plurality of crucibles, and a film is formed by heating a vapor deposition material stored in a crucible to raise the temperature of the vapor deposition material, thereby evaporating the vapor deposition material and adhering the vapor deposition material to the surface of a substrate.
Patent document 1 discloses a vacuum deposition apparatus having a vacuum chamber, a plurality of evaporation sources (crucibles) for forming a thin film on a substrate, and one shutter for opening or shielding vapor of a material evaporated from the evaporation sources. It is described that contamination can be prevented from occurring between a plurality of evaporation sources by opening one shutter in sequence in the plurality of evaporation sources.
Further, patent document 2 includes a plurality of evaporation sources, a first heating device, a second heating device, and a vapor deposition shield plate. Conventionally, when a vapor deposition material stored in a vapor deposition source is heated to raise the temperature thereof, an evaporation source device having a plurality of evaporation sources takes time to heat if the vapor deposition material is started to be heated only at the time of vapor deposition (main heating). Therefore, before the evaporation is performed, preheating is performed to raise the temperature of the evaporation source to a temperature at which the evaporation material turns into vapor. That is, the plurality of evaporation sources include an evaporation source that is performing preliminary heating and an evaporation source that is maintaining the temperature of the stored vapor deposition material to be vapor and is performing main heating for forming a film on the substrate surface. In the structure of patent document 2, a vapor deposition shield plate covers an evaporation source located at a preheating position.
Prior art documents
Patent document
[ patent document 1 ] Japanese patent laid-open No. 2007-332433
[ patent document 2 ] Japanese patent laid-open No. 2006-249575
Disclosure of Invention
Problems to be solved by the invention
However, since the heating temperature of the evaporation source is high, even in a vacuum, the substrate or the mask arranged therein is deformed by the influence of the radiant heat from the evaporation source, and problems such as a reduction in the film forming accuracy and a reduction in the quality of the film after film formation occur. As in the conventional example, when only a shutter or a vapor deposition shield plate is disposed above an evaporation source that does not perform vapor deposition, it is difficult to sufficiently reduce the influence of the evaporation source on the radiant heat of the substrate. In particular, the influence of radiant heat from an evaporation source that is being preheated or an evaporation source that has just finished evaporation is large.
The present invention has been made in view of the above problems. The invention aims to provide an evaporation source device which reduces the influence of radiant heat on a substrate.
Means for solving the problems
In order to achieve the above object, the present invention adopts the following configuration. That is to say that the first and second electrodes,
an evaporation source apparatus comprising:
a plurality of crucibles including a first crucible and a second crucible, the plurality of crucibles containing an evaporation material;
an anti-adhesion plate covering the first crucible and having an opening above the second crucible; and
a movable evaporation source shutter that changes a position to set the second crucible to a shielding state or an opening state,
the evaporation source apparatus is characterized in that,
when the evaporation source baffle plate is set to an open state of the second crucible, the evaporation source baffle plate overlaps with the adhesion preventing plate and the first crucible covered with the adhesion preventing plate.
Effects of the invention
According to the present invention, it is possible to provide an evaporation source device that reduces the influence of radiant heat on a substrate.
Drawings
Fig. 1 is a schematic view showing a part of the structure of a manufacturing apparatus of an organic electronic device;
fig. 2 is a schematic diagram showing (a) a shielding state and (b) an opening state of the structure of an evaporation source device according to embodiment 1;
fig. 3 is a schematic view showing the structure of an evaporation source baffle of embodiment 2;
fig. 4 is a schematic view showing a structure of an evaporation source baffle of embodiment 3;
fig. 5 is a schematic diagram showing a structure of an evaporation source device of embodiment 4;
fig. 6 is a schematic diagram showing a structure of an evaporation source device of embodiment 5;
fig. 7 is a schematic view showing a lateral view of an evaporation source baffle plate of the evaporation source device according to embodiment 5;
fig. 8 is a schematic diagram showing a structure of an evaporation source device of embodiment 6;
fig. 9 is a diagram illustrating a configuration of an organic EL display device.
Description of the reference numerals
1: evaporation source device
2: second crucible
3: first crucible
4: anti-adhesion plate
5: evaporation source baffle
6: film forming apparatus
7. 63: substrate
8: substrate support
9: mask and method for manufacturing the same
10: mask support frame
11: base plate baffle
12: magnetic plate
13: vacuum chamber
14: cooling mechanism
15: surface working
16: reflecting plate
17: movable support
18: rotary support
Detailed Description
Preferred embodiments and examples of the present invention are described below with reference to the drawings. However, the following embodiments and examples are merely illustrative of preferred configurations of the present invention, and the scope of the present invention is not limited to these configurations. In the following description, unless otherwise specified, the hardware configuration and software configuration, the process flow, the manufacturing conditions, the dimensions, the materials, the shapes, and the like of the devices are not intended to limit the scope of the present invention to only the hardware configuration and software configuration, the process flow, the manufacturing conditions, the dimensions, the materials, the shapes, and the like of the devices.
The evaporation source apparatus and the control method thereof according to the present invention are particularly suitable for an evaporation source apparatus for forming a thin film on an object to be evaporated by evaporation and a control method thereof. The present invention is also included as a program for causing a computer to execute the control method and a storage medium storing the program. The storage medium may be a permanent storage medium that can be read by a computer. The present invention is preferably applied to, for example, an apparatus for forming a thin film (material layer) having a desired pattern on a surface of a substrate as a deposition target by vacuum deposition. As a material of the substrate, any material such as glass, resin, metal, or the like can be selected. The deposition target of the film forming apparatus is not limited to a flat plate-like substrate. For example, a mechanical part having irregularities or openings may be used as the vapor deposition object. As the vapor deposition material, any material such as an organic material or an inorganic material (metal, metal oxide, or the like) may be selected. In addition, not only the organic film but also the metal film may be formed. The technique of the present invention can be applied to a manufacturing apparatus for organic electronic devices (for example, organic EL display devices and thin-film solar cells), optical components, and the like.
< embodiment 1 >
< schematic Structure of film Forming apparatus >
Fig. 1 is a sectional view schematically showing the structure of a vapor deposition device (film formation device). The film forming apparatus 6 has a vacuum chamber 13. The inside of the vacuum chamber 13 is maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen gas.
The vacuum chamber 13 is provided therein with approximately: a substrate 7 as an evaporation object held by a substrate holder 8, a mask 9 held by a mask holder 10, a magnetic plate 12 for attracting the mask 9 to the substrate 7 by a magnetic force, and the evaporation source apparatus 1.
The substrate support frame 8 holds the substrate by a support member such as a receiving claw (robot) for supporting the substrate 7 and a pressing member such as a jig (not shown) for pressing and holding the substrate. The substrate 7 is conveyed into the vacuum chamber 13 by a conveyance robot (not shown), held by the substrate support frame 8, and fixed to be parallel to a horizontal plane (XY plane) during film formation. The mask 9 is a mask having an opening pattern corresponding to a thin film pattern of a predetermined pattern formed on the substrate 7, and is, for example, a metal mask. The substrate 7 is placed on the mask 9 during film formation.
The evaporation source apparatus 1 is provided with a first crucible 3, a second crucible, an anti-sticking plate 4 having an opening, and an evaporation source baffle plate 5. The first crucible 3 is covered with an adhesion preventing plate 4, and the second crucible 2 is disposed below an opening of the adhesion preventing plate 4. The first crucible 3 and the second crucible 2 each contain a vapor deposition material, and the vapor deposition material is heated to generate vapor. The evaporation source barrier 5 is a movable barrier that is provided above the opening of the deposition preventing plate 4 and that is configured to open or close the opening of the deposition preventing plate 4.
The vacuum chamber 13 may also include an openable substrate shutter 11 for controlling the vapor from the evaporation source apparatus 1 to reach the substrate 7. The magnetic plate 12 may be provided with a cooling plate (not shown) for suppressing a temperature rise of the substrate 7. Further, a mechanism for aligning the substrate 7 and the mask 9, for example, a driving mechanism such as an X-direction or Y-direction actuator, a substrate support actuator for holding the substrate, and a camera (not shown) for picking up an image of the substrate 7 may be provided on the vacuum chamber 13.
The evaporation source apparatus 1 is provided with a plurality of crucibles including a first crucible 3 and a second crucible 2. A crucible is an example of an evaporation source. The evaporation source apparatus 1 is provided with a movable support (not shown) that can move the first crucible 3 and the second crucible 2. In the present embodiment, main heating for vapor deposition is performed on one of the plurality of crucibles. In addition, one of the plurality of crucibles is preheated in preparation for vapor deposition.
For convenience, a crucible that is performing main heating or a crucible disposed at a position for performing main heating is referred to as a second crucible 2. For convenience, the crucible being preheated or the crucible disposed at the position where preheating is performed is referred to as a first crucible 3. That is, the first crucible 3 is a crucible that is preheated, and during preheating, the vapor deposition material contained in the crucible is heated by a heater or the like, and the temperature of the crucible is increased to a temperature at which the vapor deposition material turns into vapor. The second crucible 2 is a crucible for main heating, and heating is continued by a heater or the like in the main heating so that the vapor deposition material contained in the crucible is maintained at a temperature of vapor.
After completion of the preheating, the first crucible 3 may be moved by a moving support (not shown) to a position for performing the main heating. The position for performing the main heating refers to a position below the opening of the adhesion preventing plate 4. Thus, the vapor deposition material in each crucible is heated in two stages, i.e., preheating and main heating, to be vapor.
< detailed Structure of Evaporation Source device >
Fig. 2 shows a movable form of the evaporation source shutter 5 of the evaporation source apparatus 1.
Fig. 2(a) shows a state in which the evaporation source shutter 5 is shielded. At this time, the vapor of the evaporation source material stored in the second crucible 2 is blocked by the evaporation source block 5, and the first crucible 3 is covered by the adhesion preventing plate 4. The shielding state is not limited to a state in which the evaporation source baffle 5 covers the entire second crucible 2, as long as at least a part of the vapor of the material from the second crucible 2 is covered by the evaporation source baffle 5 and cannot directly reach the substrate. Further, a gap may be provided between the second crucible 2 and the evaporation source shutter 5. It is preferable that the entire second crucible 2 is covered with the evaporation source shutter 5 when viewed from the substrate side.
The first crucible 3 may be a preheated crucible or a crucible moved to a position where the crucible is cooled after vapor deposition.
Fig. 2(b) shows an opened state of the evaporation source shutter 5. At this time, most of the vapor of the evaporation source material stored in the second crucible 2 reaches the substrate 7.
When the evaporation source shutter 5 is in the open state, the evaporation source shutter 5 is moved to a position where it overlaps both the adhesion preventing plate 4 and the first crucible 3 covered with the adhesion preventing plate 4. From a certain point of view, an imaginary line connecting the first crucible 3 and the substrate 7 passes through the adhesion preventing plate 4 and the evaporation source shutter 5. Further, it is preferable that the adhesion preventing plate 4 and the evaporation source barrier 5 overlap with the whole of the first crucible 3 when viewed from the substrate side.
The overlapping order may be the deposition preventing plate 4, the evaporation source barrier 5, or the evaporation source barrier 5, the deposition preventing plate 4 as viewed from the first crucible 3. In the case where the evaporation source barrier 5 and the deposition preventing plate 4 are stacked in this order, the evaporation source barrier 5 is provided between the first crucible 3 and the second crucible 2 and between the deposition preventing plate 4.
According to the above configuration, both the adhesion preventing plate 4 and the evaporation source barrier 5 are interposed between the first crucible 3 and the substrate 7. Therefore, the influence of the radiant heat from the first crucible 3 on the substrate 7 can be reduced.
In the above description, the structure in which one deposition preventing plate 4 having an opening is provided was described as an example, but the deposition preventing plate 4 may be formed by overlapping 2 or 3 plates, and in this case, the influence of the radiant heat from the first crucible 3 on the substrate 7 can be more effectively reduced by adopting the evaporation source shutter moving structure as described above.
< embodiment 2 >
Fig. 3 is a schematic sectional view (fig. 3(a) and 3(c)) as viewed from the top and a schematic sectional view (fig. 3(b) and 3(d)) as viewed from the side, showing elements of a cooling mechanism of the evaporation source baffle 5 in the evaporation source device of the present embodiment.
Fig. 3(a) and 3(b) schematically show the arrangement of the cooling water passage 14 provided as the cooling mechanism in the evaporation source shutter 5. Thus, even if the evaporation source baffle 5 is heated by radiant heat from the first crucible 3 or the like, the cooling medium can be flowed through the cooling water passage 14 to release the heat from the evaporation source baffle 5.
Further, the evaporation source baffle 5 shown in fig. 3(c) and 3(d) is provided with a cooling water passage 14, and the surface of the evaporation source baffle 5 facing the first crucible 3 is subjected to a surface treatment 15 that is more likely to absorb heat than the surface opposite to the surface facing the first crucible 3. The surface treatment 15 is specifically a coating of a material having a high emissivity (black material), a coating of polytetrafluoroethylene (resin containing hydrogen fluoride), or the like.
As another example, a member (not shown) having a higher thermal conductivity than a member of a surface of the evaporation source baffle 5 opposite to the surface facing the first crucible 3 may be used as the member of the surface facing the first crucible 3.
By using the surface treatment 15 or a member having high thermal conductivity, the heat of the radiant heat received from the first crucible 3 and the like can be easily transferred to the cooling mechanism 14 provided in the evaporation source shutter 5, and the influence of the radiant heat on the substrate 7 can be reduced.
< embodiment 3 >
Fig. 4 is a schematic sectional view of the evaporation source baffle 5 in the evaporation source device of the present embodiment, as viewed from the top (fig. 4 a) and from the side (fig. 4 b). A reflection plate 16 is provided on the surface of the evaporation source baffle 5 facing the first crucible 3 shown in fig. 4 (b).
The specific structure of the reflecting plate 16 is a surface finish having a low emissivity or a material having a low emissivity coated on a surface opposite to the surface facing the first crucible 3. As another specific structure of the reflection plate 16, there is a structure in which a surface finish having a low emissivity or another plate material formed of a material having a low emissivity is disposed on a surface of the evaporation source baffle 5 facing the first crucible 3 with a space between the surface and the main body of the evaporation source baffle 5.
As a specific material, molybdenum or tantalum may be considered.
Further, a surface with low emissivity can be formed by polishing stainless steel or aluminum as a material and mirror-finishing the material.
By providing the reflection plate 16 on the evaporation source baffle 5 as described above to reflect radiant heat from the first crucible 3 or the like, the influence of the radiant heat on the substrate 7 can be reduced.
Further, the radiant heat is returned to the first crucible 3, thereby providing an effect of increasing the thermal efficiency of heating the first crucible.
The evaporation source shutter 5 of the present embodiment may be combined with the cooling mechanism described in embodiment 2.
< embodiment 4 >
Fig. 5 shows an evaporation source barrier 5 of the evaporation source apparatus 1 in which four crucibles including the first crucible 3 and the second crucible 2 are provided on the movable support 17 so as to be movable, as viewed from above. Fig. 5 shows the position of the evaporation source baffle 5 when the evaporation source baffle 5 is in the open state and the opening of the deposition preventing plate 4 is in the open state.
The four crucibles including the first crucible 3 and the second crucible 2 are respectively provided on a movable support 17 that is movable. The movable support 17 moves the position of each crucible by moving together in the direction of the arrow in the moving direction of the movable support shown in the figure, for example. The moving direction of the movable support 17 may be the direction opposite to the arrow.
In embodiment 4 of fig. 5, there are four crucibles. One of the four crucibles is located below the opening of the adhesion preventing plate 4 and is in a position for performing main heating. This crucible was set as the second crucible 2. One of the three crucibles other than the second crucible is located at a position covered with the adhesion preventing plate 4 and the evaporation source shutter 5, and is located at a position for preheating. The other crucible was set as the first crucible 3.
The evaporation source shutter 5 can be in a shielding state by moving in the opening and closing direction of the illustrated evaporation source shutter.
In the present embodiment, the influence of radiant heat on the substrate 7 can be reduced as in embodiments 1 to 3.
< embodiment 5 >
Fig. 6 shows an evaporation source baffle 5 of the evaporation source apparatus 1 in which seven crucibles including the first crucible 3 and the second crucible 2 are provided on the rotatable rotation support 18, as viewed from above. Fig. 6 shows the position of the evaporation source baffle 5 when the evaporation source baffle 5 is in the open state and the opening of the deposition preventing plate 4 is in the open state. Fig. 7 shows a lateral view of the evaporation source baffle 5, (a) shows an open state of the opening of the deposition preventing plate 4, and (b) shows a shielded state of the opening of the deposition preventing plate 4.
Seven crucibles including the first crucible 3 and the second crucible 2 are provided along the circumferential direction of the rotatable rotation support 18. The rotation support body 18 moves the position of each crucible provided along the circumferential direction of the rotation support body 18 by, for example, rotating in the arrow direction of the rotation support body shown in the figure. The rotation direction of the rotation support 18 may be opposite to the arrow of the rotation support.
In embodiment 5 of fig. 6, there are seven crucibles. One of the seven crucibles is located below the opening of the adhesion preventing plate 4 and is in a position for performing main heating. This crucible was set as the second crucible 2. One of the six crucibles other than the second crucible is located at a position covered with the adhesion preventing plate 4 and the evaporation source shutter 5, and is located at a position for preheating. The other crucible was set as the first crucible 3.
In the present embodiment, the second crucible 2 and the first crucible 3 are arranged in a positional relationship such that the other crucibles are arranged therebetween, thereby reducing the thermal influence when the preheating and the main heating are performed separately.
The evaporation source shutter 5 can be in a shielding state by moving in the opening and closing direction of the illustrated evaporation source shutter.
In the present embodiment, the influence of radiant heat on the substrate 7 can be reduced as in embodiments 1 to 4.
< embodiment 6 >
Fig. 8 shows an evaporation source baffle 5 of the evaporation source apparatus 1 in which seven crucibles including the first crucible 3 and the second crucible 2 are provided on the rotatable rotation support 18, as viewed from above. Fig. 6 shows the position of the evaporation source baffle 5 when the evaporation source baffle 5 is in the open state and the opening of the deposition preventing plate 4 is in the open state.
Seven crucibles including the first crucible 3 and the second crucible 2 are provided along the circumferential direction of the rotatable rotation support 18. The rotation support body 18 moves the position of each crucible provided along the circumferential direction of the rotation support body 18 by, for example, rotating in the arrow direction of the rotation support body shown in the figure. The rotation direction of the rotation support 18 may be opposite to the arrow of the rotation support.
That is, embodiment 6 of fig. 8 has seven crucibles. One of the seven crucibles is located below the opening of the adhesion preventing plate 4 and at a position for performing main heating. This crucible was set as the second crucible 2. One of the six crucibles other than the second crucible is a crucible immediately after completion of vapor deposition and moved to the cooling position by rotation of the rotation support 18, and is in a position covered with the deposition preventing plate 4 and the evaporation source shutter 5. In the present embodiment, this crucible is used as the first crucible 3.
In the present embodiment, the second crucible 2 and the first crucible 3 are arranged in a positional relationship such that the other crucibles are arranged therebetween, thereby reducing the thermal influence when the preheating and the main heating are performed separately.
The evaporation source shutter 5 can be in a shielding state by moving in the opening and closing direction of the illustrated evaporation source shutter. In the present embodiment and embodiment 5, the rotation shaft for moving the evaporation source shutter 5 in the opening and closing direction may be positioned outside the evaporation source (radially outside the rotation support body 18 provided with the crucible in the circumferential direction) as shown in fig. 8, or may be positioned inside the evaporation source (radially inside the rotation support body 18 provided with the crucible in the circumferential direction) as shown in fig. 6.
In the present embodiment, as in embodiments 1 to 5, the influence of radiant heat on the substrate 7 can be reduced, and in particular, the influence of radiant heat from the evaporation source immediately after completion of vapor deposition can be reduced.
< example of film Forming method of film Forming apparatus
Next, an example of a film forming method using the evaporation source apparatus or the film forming apparatus according to the present embodiment will be described with reference to fig. 1 and 2.
The film forming method of the present embodiment includes a heating step of the first crucible 3 and the second crucible 2 of the evaporation source apparatus 1. First, as the preheating step, there are the following steps: and a step of heating the vapor deposition material contained in the first crucible 3 provided at the preheating position to raise the temperature of the crucible to a temperature at which the vapor deposition material turns into vapor. In addition, as the main heating step, there are the following steps: and a step of moving the crucible heated in the preliminary heating step to the main heating position to form the second crucible 2, and maintaining the temperature in the second crucible 2 so that the temperature of the vapor deposition material contained in the second crucible 2 can be maintained as vapor.
Further, the film forming method of the present embodiment includes a step of opening and closing the evaporation source shutter 5 provided in the opening of the deposition preventing plate 4 of the evaporation source device 1. First, as a shielding step of the evaporation source shutter 5, there is a step of shielding the vapor of the heated vapor deposition material in the second crucible 2. Further, as the opening step, there are the following steps: and a step of forming a film on the substrate 7 held by the substrate holder 8 by overlapping the evaporation source shutter 5 with the first crucible 3 covered with the adhesion preventing plate 4 to open the vapor of the heated vapor deposition material in the second crucible 2.
Thereby, the evaporation source barrier 5 covers the first crucible 3 covered with the adhesion preventing plate 4 during film formation, so that it is possible to provide a film forming method that can reduce the influence of radiant heat from the first crucible 3 on the substrate 7.
As a result, it is possible to suppress a decrease in film formation accuracy due to thermal deformation of the substrate 7 by radiant heat during film formation, and a decrease in quality of a film to be formed due to radiant heat.
< embodiment of method for manufacturing electronic apparatus >
Next, an example of a method for manufacturing an electronic device using the film formation method of the present embodiment will be described. Hereinafter, as an example of the electronic apparatus, a structure and a manufacturing method of the organic EL display device are exemplified.
First, an organic EL display device to be manufactured will be described. Fig. 9(a) is an overall view of the organic EL display device 60, and fig. 9(b) shows a cross-sectional structure of 1 pixel.
As shown in fig. 9(a), a plurality of pixels 62 each including a plurality of light-emitting elements are arranged in a matrix in a display region 61 of an organic EL display device 60. Each of the light emitting elements has a structure having an organic layer sandwiched by a pair of electrodes, and details will be described later. Here, the pixel is a minimum unit that can display a desired color in the display region 61. In the case of the organic EL display device of the present embodiment, the pixel 62 is configured by a combination of the first light-emitting element 62R, the second light-emitting element 62G, and the 3 rd light-emitting element 62B which display mutually different light emissions. The pixel 62 is often configured by a combination of a red light emitting element, a green light emitting element, and a blue light emitting element, but is not particularly limited as long as it is a combination of a yellow light emitting element, a cyan light emitting element, and a white light emitting element, and at least 1 color or more is required.
Fig. 9(B) is a partial cross-sectional view taken along line a-B of fig. 9 (a). The pixel 62 includes an organic EL element having a first electrode (anode) 64, a hole transport layer 65, any one of light-emitting layers 66R, 66G, and 66B, an electron transport layer 67, and a second electrode (cathode) 68 on a substrate 63. The hole transport layer 65, the light emitting layers 66R, 66G, and 66B, and the electron transport layer 67 correspond to organic layers. In this embodiment, the light-emitting layer 66R is a red-emitting organic EL layer, the light-emitting layer 66G is a green-emitting organic EL layer, and the light-emitting layer 66B is a blue-emitting organic EL layer. The light-emitting layers 66R, 66G, and 66B are patterned to correspond to light-emitting elements (also referred to as organic EL elements) that emit red, green, and blue light, respectively. The first electrode 64 is formed separately for each light emitting element. The hole transport layer 65, the electron transport layer 67, and the second electrode 68 may be formed together with the plurality of light emitting elements 62R, 62G, and 62B, or may be formed for each light emitting element. In order to prevent the first electrode 64 and the second electrode 68 from being short-circuited by foreign matter, an insulating layer 69 is provided between the first electrodes 64. Further, since the organic EL layer is deteriorated by moisture and oxygen, a protective layer 70 for protecting the organic EL element from moisture and oxygen is provided.
In order to form an organic EL layer as a light-emitting element unit, a method of forming a film through a mask is used. In recent years, the definition of display devices has been improved, and a mask having an opening width of several tens of μm is used for forming an organic EL layer. In the case of film formation using such a mask, if the mask is thermally deformed by heat from an evaporation source during film formation, the mask and the substrate are displaced from each other, and a pattern of a thin film formed on the substrate is formed to be displaced from a desired position. Therefore, the film forming apparatus (vacuum deposition apparatus) of the present invention is preferably used for forming the organic EL layer.
Next, an example of a method for manufacturing the organic EL display device is specifically described.
First, a substrate 63 on which a circuit (not shown) for driving the organic EL display device and the first electrode 64 are formed is prepared.
An acrylic resin is formed on the substrate 63 on which the first electrode 64 is formed by spin coating, and the insulating layer 69 is formed by patterning the acrylic resin so as to form an opening in a portion where the first electrode 64 is formed by photolithography. The opening corresponds to a light-emitting region where the light-emitting element actually emits light.
The substrate 63 with the patterned insulating layer 69 is fed into a first film formation device, held by a substrate holder, and formed on the first electrode 64 in the display region with the hole transport layer 65 as a common layer. The hole transport layer 65 is formed by vacuum evaporation. Since the hole transport layer 65 is actually formed to have a size larger than the display region 61, a high-definition mask is not required.
Next, the substrate 63 on which the hole transport layer 65 has been formed is transferred to a second film formation apparatus and held by a substrate holder. The substrate and the mask are aligned, the substrate is placed on the mask, and the red light-emitting layer 66R is formed on the portion of the substrate 63 where the red light-emitting element is disposed. According to this embodiment, the mask and the substrate can be satisfactorily superposed on each other, and a film can be formed with high accuracy.
Similarly to the formation of the light-emitting layer 66R, the green-emitting light-emitting layer 66G is formed by a third film formation device, and the blue-emitting light-emitting layer 66B is formed by a fourth film formation device. After the completion of the formation of the light-emitting layers 66R, 66G, and 66B, the electron transport layer 67 is formed in the entire display region 61 by the fifth film formation device. The electron transport layer 67 is formed as a common layer for the light emitting layers 66R, 66G, and 66B of 3 colors.
The substrate on which the electron transport layer 65 was formed was moved to a sputtering apparatus to form the second electrode 68, and then moved to a plasma CVD apparatus to form the protective layer 70, thereby completing the organic EL display device 60.
After the substrate 63 having the patterned insulating layer 69 is loaded into the film formation apparatus, if the substrate is exposed to an atmosphere containing moisture and oxygen until the film formation of the protective layer 70 is completed, the light-emitting layer made of an organic EL material may be degraded by moisture and oxygen. Therefore, in this example, the input/output of the substrate between the film forming apparatuses is performed in a vacuum atmosphere or an inert gas atmosphere.
The organic EL display device thus obtained has a light-emitting layer formed with high accuracy for each light-emitting element. Therefore, if the above-described manufacturing method is used, it is possible to suppress the occurrence of defects in the organic EL display device due to the positional deviation of the light-emitting layer.
The above embodiments are merely examples of the present invention, and the present invention is not limited to the configurations of the above embodiments, and may be appropriately modified within the scope of the technical idea. For example, in the above embodiment, the substrate is moved by the substrate support frame, but the mask as the carrier, or both the substrate and the mask may be moved. In this case, the substrate moving mechanism may be provided with a moving mechanism of the carrier.
Claims (14)
1. An evaporation source apparatus comprising:
a support body that supports a plurality of crucibles containing a vapor deposition material so as to be movable between a first position at which the crucibles are preheated and a second position at which the crucibles are mainly heated;
an adhesion preventing plate covering the crucible moved to the first position and having an opening above the crucible moved to the second position; and
an evaporation source baffle plate that moves between a shielding state of shielding the opening and an open state of opening the opening,
the evaporation source apparatus is characterized in that,
when the evaporation source shutter is moved to the open state, the evaporation source shutter overlaps with the adhesion preventing plate and the crucible located at the first position, and is located between the crucible located at the first position and the substrate, thereby reducing an influence of radiant heat from the crucible located at the first position on the substrate.
2. The evaporation source apparatus according to claim 1,
the evaporation source baffle plate is provided with a cooling mechanism for cooling the evaporation source baffle plate.
3. The evaporation source apparatus according to claim 2,
the surface of the evaporation source baffle plate facing the plurality of crucibles has a higher thermal conductivity or a higher emissivity than a surface of the evaporation source baffle plate opposite to the surface facing the plurality of crucibles.
4. The evaporation source apparatus according to claim 1,
and a reflecting mechanism for reflecting heat is provided on a surface of the evaporation source baffle plate facing the plurality of crucibles.
5. The evaporation source apparatus according to claim 1,
the supporting body is a movable supporting body capable of moving,
moving one of the plurality of crucibles to the first position and moving another one of the plurality of crucibles to the second position by the movement of the moving support.
6. The evaporation source apparatus according to claim 1,
the supporting body is a rotary supporting body capable of rotating,
the plurality of crucibles are arranged along a circumferential direction of the rotary support body,
one of the plurality of crucibles is moved to the first position and another one of the plurality of crucibles is moved to the second position by rotation of the rotary support.
7. The evaporation source apparatus according to claim 1,
the supporting body is a movable supporting body capable of moving,
one of the plurality of crucibles is moved to a third position immediately after completion of vapor deposition by the movement of the movable support, and the other of the plurality of crucibles is moved to the second position.
8. The evaporation source apparatus according to claim 1 or 2,
the supporting body is a rotary supporting body capable of rotating,
the plurality of crucibles are arranged along a circumferential direction of the rotary support body,
one of the plurality of crucibles is moved to a third position immediately after completion of vapor deposition by rotation of the rotation support, and the other of the plurality of crucibles is moved to the second position.
9. A film forming apparatus, comprising:
the evaporation source device according to any one of claims 1 to 8;
a substrate support frame for disposing a substrate at a position facing the evaporation source device; and
and a substrate baffle plate between the substrate support and the evaporation source device, wherein the substrate of the substrate support is set to be in an open state or a closed state relative to the evaporation source device.
10. A film forming method for forming a film of a vapor deposition material contained in the crucible on a substrate provided at a position facing the evaporation source device by using the evaporation source device according to any one of claims 1 to 6,
the film forming method is characterized by comprising the following steps:
a preheating step of heating the vapor deposition material contained in the crucible disposed at the first position to raise the temperature of the crucible disposed at the first position to a temperature at which the vapor deposition material turns into vapor;
a main heating step of maintaining a temperature at which the vapor deposition material contained in the crucible disposed at the second position is vaporized;
a shielding step of shielding the vapor of the heated deposition material in the crucible disposed at the second position; and
and an opening step of opening the vapor of the heated vapor deposition material in the crucible disposed at the second position by overlapping the evaporation source shutter with the crucible disposed at the first position covered with the adhesion preventing plate, thereby forming a film on the substrate.
11. A method of manufacturing an electronic device having an organic film formed on a substrate, the method being characterized in that,
the organic film is formed by the film formation method according to claim 10.
12. The method of manufacturing an electronic device according to claim 11,
the electronic apparatus is a display panel of an organic EL display device.
13. A method of manufacturing an electronic device having a metal film formed on a substrate, the method comprising,
the metal film is formed by the film formation method according to claim 10.
14. The method of manufacturing an electronic device according to claim 13,
the electronic apparatus is a display panel of an organic EL display device.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2017-0144276 | 2017-10-31 | ||
| KR1020170144276A KR101901072B1 (en) | 2017-10-31 | 2017-10-31 | Evaporation source device, film formation apparatus, film formation method and manufacturing method of electronic device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109722635A CN109722635A (en) | 2019-05-07 |
| CN109722635B true CN109722635B (en) | 2021-11-16 |
Family
ID=63719866
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810844797.1A Active CN109722635B (en) | 2017-10-31 | 2018-07-27 | Evaporation source device, film forming method, and method for manufacturing electronic device |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2019081949A (en) |
| KR (1) | KR101901072B1 (en) |
| CN (1) | CN109722635B (en) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7078752B2 (en) * | 2018-12-27 | 2022-05-31 | 株式会社アルバック | Vacuum processing equipment |
| JP7240993B2 (en) * | 2019-08-27 | 2023-03-16 | 東京エレクトロン株式会社 | Source gas supply system and source gas supply method |
| JP7360851B2 (en) * | 2019-09-02 | 2023-10-13 | キヤノントッキ株式会社 | Shutter device, film-forming device, film-forming method, and electronic device manufacturing method |
| KR102442377B1 (en) * | 2019-09-27 | 2022-09-13 | 주식회사 뷰웍스 | A substrate fixing device for scintilator deposition, a substrate deposition device containing the same and a scintillator deposition method using the same |
| KR20210061639A (en) * | 2019-11-20 | 2021-05-28 | 캐논 톡키 가부시키가이샤 | Film forming apparatus, film forming method and electronic device manufacturing method using the same |
| CN112831753A (en) * | 2019-11-25 | 2021-05-25 | 合肥欣奕华智能机器有限公司 | Multiple evaporation source shelters from mechanism and film evaporation equipment |
| CN111004998A (en) * | 2019-12-05 | 2020-04-14 | 深圳市华星光电半导体显示技术有限公司 | Evaporation device and preparation method of mask plate thereof |
| KR102445029B1 (en) * | 2020-10-19 | 2022-09-21 | 주식회사 해토 | Ultra-thin glass transfer |
| CN114481042A (en) * | 2020-10-27 | 2022-05-13 | 山东浪潮华光光电子股份有限公司 | Method for cleaning crucible assembly of electron beam evaporation table |
| JP7216064B2 (en) * | 2020-12-10 | 2023-01-31 | キヤノントッキ株式会社 | Film forming apparatus, film forming method, and electronic device manufacturing method |
| CN112626462B (en) * | 2020-12-11 | 2023-05-30 | 江苏集萃有机光电技术研究所有限公司 | Evaporation source feeding device and evaporation source feeding method |
| CN113088918B (en) * | 2021-04-19 | 2022-11-25 | 辽宁分子流科技有限公司 | Intelligent evaporation coating machine |
| CN113174565A (en) * | 2021-04-26 | 2021-07-27 | 睿馨（珠海）投资发展有限公司 | Baffle plate, evaporation equipment and preparation method for manufacturing high-gradient film layer |
| CN114645250A (en) * | 2022-03-25 | 2022-06-21 | 无锡极电光能科技有限公司 | Vapor deposition apparatus, perovskite battery vapor deposition method, and perovskite battery |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1070434A (en) * | 1991-09-11 | 1993-03-31 | 佳能株式会社 | Vacuum-evaporation appts |
| JP2003253433A (en) * | 2002-03-01 | 2003-09-10 | Ulvac Japan Ltd | Thin film deposition apparatus |
| JP2003313657A (en) * | 2002-04-25 | 2003-11-06 | Tohoku Pioneer Corp | Vapor deposition device and method for controlling the same |
| CN1487777A (en) * | 2002-08-30 | 2004-04-07 | �����ɷ� | Method for forming protection film coating electronic elements and electronic instrument with protection film |
| TW201305369A (en) * | 2011-04-11 | 2013-02-01 | Tokyo Electron Ltd | Film-forming apparatus and film-forming method |
| CN103602950A (en) * | 2013-09-17 | 2014-02-26 | 京东方科技集团股份有限公司 | Evaporation source device and evaporation source equipment |
| KR20150084297A (en) * | 2014-01-13 | 2015-07-22 | 주식회사 에스에프에이 | Inline deposition apparatus for manufacturing oled |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004256843A (en) * | 2003-02-25 | 2004-09-16 | Jeol Ltd | Vacuum vapor deposition apparatus |
| JP2005002388A (en) * | 2003-06-11 | 2005-01-06 | Jeol Ltd | Vacuum deposition apparatus |
| JP2006083423A (en) * | 2004-09-15 | 2006-03-30 | Tokki Corp | Shutter for evaporation source in vapor deposition apparatus, and the vapor deposition apparatus |
-
2017
- 2017-10-31 KR KR1020170144276A patent/KR101901072B1/en active IP Right Grant
-
2018
- 2018-07-27 CN CN201810844797.1A patent/CN109722635B/en active Active
- 2018-09-21 JP JP2018178114A patent/JP2019081949A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1070434A (en) * | 1991-09-11 | 1993-03-31 | 佳能株式会社 | Vacuum-evaporation appts |
| JP2003253433A (en) * | 2002-03-01 | 2003-09-10 | Ulvac Japan Ltd | Thin film deposition apparatus |
| JP2003313657A (en) * | 2002-04-25 | 2003-11-06 | Tohoku Pioneer Corp | Vapor deposition device and method for controlling the same |
| CN1487777A (en) * | 2002-08-30 | 2004-04-07 | �����ɷ� | Method for forming protection film coating electronic elements and electronic instrument with protection film |
| TW201305369A (en) * | 2011-04-11 | 2013-02-01 | Tokyo Electron Ltd | Film-forming apparatus and film-forming method |
| CN103602950A (en) * | 2013-09-17 | 2014-02-26 | 京东方科技集团股份有限公司 | Evaporation source device and evaporation source equipment |
| KR20150084297A (en) * | 2014-01-13 | 2015-07-22 | 주식회사 에스에프에이 | Inline deposition apparatus for manufacturing oled |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2019081949A (en) | 2019-05-30 |
| KR101901072B1 (en) | 2018-09-20 |
| CN109722635A (en) | 2019-05-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109722635B (en) | Evaporation source device, film forming method, and method for manufacturing electronic device | |
| US9450140B2 (en) | Thin film deposition apparatus and method of manufacturing organic light-emitting display apparatus using the same | |
| US9453282B2 (en) | Thin film deposition apparatus | |
| US9012258B2 (en) | Method of manufacturing an organic light-emitting display apparatus using at least two deposition units | |
| US10431779B2 (en) | Organic layer deposition apparatus, method of manufacturing organic light-emitting display apparatus using the same, and organic light-emitting display apparatus manufactured using the method | |
| KR101174877B1 (en) | Apparatus for thin layer deposition and method for manufacturing of organic light emitting display apparatus using the same | |
| US8951610B2 (en) | Organic layer deposition apparatus | |
| US8852687B2 (en) | Organic layer deposition apparatus | |
| US20120009328A1 (en) | Thin film deposition apparatus and method of manufacturing organic light-emitting display device by using the same | |
| KR101678056B1 (en) | Apparatus for thin layer deposition, method for manufacturing of organic light emitting display apparatus using the same, and organic light emitting display apparatus manufactured by the method | |
| US8882922B2 (en) | Organic layer deposition apparatus | |
| US8883259B2 (en) | Thin film deposition apparatus | |
| US20150217319A1 (en) | Organic Layer Deposition Apparatus, Frame Sheet Assembly For The Organic Layer Deposition Apparatus, And Method Of Manufacturing Organic Light Emitting Display Device Using The Frame Sheet Assembly | |
| CN110607504B (en) | Film forming apparatus, film forming method, and electronic device manufacturing method | |
| US20120299016A1 (en) | Organic layer deposition apparatus and method of manufacturing organic light emitting display device using the organic layer deposition apparatus | |
| US20110052795A1 (en) | Thin film deposition apparatus and method of manufacturing organic light-emitting display device by using the same | |
| US20120009332A1 (en) | Method of manufacturing organic light-emitting display device | |
| US20100330712A1 (en) | Thin film deposition apparatus and method of manufacturing organic light emitting device by using the same | |
| CN110656310B (en) | Film forming apparatus, apparatus for manufacturing organic device, and method for manufacturing organic device | |
| JP7431088B2 (en) | Film forming apparatus, film forming method, and electronic device manufacturing method | |
| KR20190036232A (en) | Film forming apparatus, film forming method and method of manufacturing electronic device | |
| JP2009064740A (en) | Deposition method and device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |