JP2003253433A - Thin film deposition apparatus - Google Patents
Thin film deposition apparatusInfo
- Publication number
- JP2003253433A JP2003253433A JP2002055283A JP2002055283A JP2003253433A JP 2003253433 A JP2003253433 A JP 2003253433A JP 2002055283 A JP2002055283 A JP 2002055283A JP 2002055283 A JP2002055283 A JP 2002055283A JP 2003253433 A JP2003253433 A JP 2003253433A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- evaporation
- shutter
- predetermined
- forming apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000427 thin-film deposition Methods 0.000 title abstract 3
- 238000001704 evaporation Methods 0.000 claims abstract description 73
- 230000008020 evaporation Effects 0.000 claims abstract description 68
- 239000010408 film Substances 0.000 claims abstract description 29
- 239000003507 refrigerant Substances 0.000 claims abstract description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000010409 thin film Substances 0.000 claims description 29
- 230000015572 biosynthetic process Effects 0.000 claims description 15
- 238000001816 cooling Methods 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 13
- 239000000758 substrate Substances 0.000 abstract description 15
- 230000008021 deposition Effects 0.000 abstract description 5
- 239000011368 organic material Substances 0.000 abstract description 4
- 238000000151 deposition Methods 0.000 abstract 2
- 239000002826 coolant Substances 0.000 description 10
- 239000002019 doping agent Substances 0.000 description 10
- 238000007740 vapor deposition Methods 0.000 description 7
- 239000000498 cooling water Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- HXWWMGJBPGRWRS-CMDGGOBGSA-N 4- -2-tert-butyl-6- -4h-pyran Chemical compound O1C(C(C)(C)C)=CC(=C(C#N)C#N)C=C1\C=C\C1=CC(C(CCN2CCC3(C)C)(C)C)=C2C3=C1 HXWWMGJBPGRWRS-CMDGGOBGSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、例えば、有機ＬＥ
Ｄ素子の発光層に用いられる有機薄膜を蒸着によって形
成するための薄膜形成装置に関する。TECHNICAL FIELD The present invention relates to an organic LE, for example.
The present invention relates to a thin film forming apparatus for forming an organic thin film used for a light emitting layer of a D element by vapor deposition.
【０００２】[0002]
【従来の技術】近年、フルカラーフラットパネルディス
プレイ用の素子として、有機ＬＥＤ素子が注目されてい
る。有機ＬＥＤ素子は、蛍光性有機化合物を電気的に励
起して発光させる自発光型素子で、高輝度、高視野角、
面発光、薄型で多色発光が可能であり、しかも数Ｖとい
う低電圧の直流印加で発光する全固体素子で、かつ低温
においてもその特性の変化が少ないという特徴を有して
いる。2. Description of the Related Art In recent years, organic LED elements have been receiving attention as elements for full-color flat panel displays. The organic LED element is a self-luminous element that electrically excites a fluorescent organic compound to emit light, and has high brightness, a wide viewing angle,
It is a surface-emitting device, is thin, and is capable of multicolored light emission. Moreover, it is an all-solid-state device that emits light by applying a DC voltage as low as a few volts, and its characteristics are small even at low temperatures.
【０００３】図６は、従来の有機ＬＥＤ素子を作成する
ための薄膜形成装置の概略構成図である。図６に示すよ
うに、この薄膜形成装置１０１にあっては、真空槽１０
２の下部に蒸発源１０３が配設されるとともに、この蒸
発源１０３の上方に成膜対象物である基板１０４が配置
されている。そして、蒸発源１０３から蒸発される有機
材料の蒸気を、マスク１０５を介して基板１０４に蒸着
させることによって所定パターンの有機薄膜を形成する
ようになっている。FIG. 6 is a schematic configuration diagram of a thin film forming apparatus for producing a conventional organic LED element. As shown in FIG. 6, in the thin film forming apparatus 101, the vacuum chamber 10
An evaporation source 103 is disposed below the evaporation source 2, and a substrate 104 which is a film formation target is disposed above the evaporation source 103. Then, the vapor of the organic material evaporated from the evaporation source 103 is deposited on the substrate 104 through the mask 105 to form an organic thin film having a predetermined pattern.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、近年、
マスクのピッチのファイン化や基板の大型化に伴い、従
来の技術では均一な膜厚分布を得ることが困難になりつ
つある。However, in recent years,
As the mask pitch becomes finer and the size of the substrate becomes larger, it becomes difficult to obtain a uniform film thickness distribution by the conventional technique.
【０００５】特に、従来の有機薄膜装置では、成膜の
際、蒸発源からの熱によってマスクが変形し、蒸着領域
のずれが生じてしまうという問題があった。Particularly, in the conventional organic thin film device, there is a problem that the mask is deformed by the heat from the evaporation source during the film formation to cause the displacement of the vapor deposition region.
【０００６】本発明は、このような従来の技術の課題を
解決するためになされたもので、蒸発源からマスクへの
熱の影響を防止して正確な領域に膜を形成しうる薄膜形
成装置を提供することを目的とする。The present invention has been made in order to solve the problems of the prior art, and a thin film forming apparatus capable of forming a film in an accurate region by preventing the effect of heat from the evaporation source on the mask. The purpose is to provide.
【０００７】[0007]
【課題を解決するための手段】上記目的を達成するため
になされた請求項１記載の発明は、所定の成膜対象物に
対して薄膜を形成するための真空槽と、前記真空槽内に
配設され、所定の蒸発材料を蒸発させる蒸発部と、前記
成膜対象物と前記蒸発部との間に配設され、所定の冷却
機構を有する成膜制御用シャッターとを備えたことを特
徴とする薄膜形成装置である。請求項２記載の発明は、
請求項１記載の発明において、前記成膜制御用シャッタ
ーの冷却機構は、所定の冷媒を循環させるように構成さ
れていることを特徴とする。請求項３記載の発明は、請
求項１又は２のいずれか１項記載の発明において、前記
成膜制御用シャッターの冷却機構は、シャッター本体の
内部を前記所定の冷媒が循環するように構成されている
ことを特徴とする。請求項４記載の発明は、請求項１乃
至３のいずれか１項記載の発明において、発明前記成膜
制御用シャッターの冷却機構は、水が循環するように構
成されていることを特徴とする請求項１乃至３のいずれ
か１項記載のことを特徴とする。The invention according to claim 1 made in order to achieve the above object, comprises: a vacuum chamber for forming a thin film on a predetermined film-forming target; An evaporation unit that is arranged to evaporate a predetermined evaporation material, and a film formation control shutter that is arranged between the film formation target and the evaporation unit and has a predetermined cooling mechanism are provided. It is a thin film forming apparatus. The invention according to claim 2 is
In the invention of claim 1, the cooling mechanism of the film formation control shutter is configured to circulate a predetermined refrigerant. According to a third aspect of the present invention, in the invention according to any one of the first and second aspects, the cooling mechanism of the film formation control shutter is configured such that the predetermined refrigerant circulates inside the shutter body. It is characterized by According to a fourth aspect of the present invention, in the invention according to any one of the first to third aspects, the cooling mechanism of the invention film formation control shutter is configured to circulate water. It is characterized in that any one of claims 1 to 3 is described.
【０００８】本発明にあっては、所定の冷却機構を有す
る成膜制御用シャッターが成膜対象物と蒸発部との間に
配設されていることから、蒸発源からの熱がマスクに伝
わりにくく、これによりマスクの変形に起因する蒸着領
域のずれを防止することが可能になる。In the present invention, since the film-forming control shutter having a predetermined cooling mechanism is arranged between the object to be film-formed and the evaporation section, the heat from the evaporation source is transferred to the mask. It is difficult to prevent the shift of the vapor deposition region due to the deformation of the mask.
【０００９】その結果、本発明によれば、成膜対象物に
対し正確な領域に膜を形成することが可能になる。As a result, according to the present invention, it becomes possible to form a film in an accurate region on the object to be film-formed.
【００１０】また、本発明においては、成膜制御用シャ
ッターの冷却機構を、所定の冷媒を循環させるように構
成すること、特に、シャッター本体の内部を水が循環す
るように構成することによって、簡素な構成で効率良く
成膜制御用シャッターの冷却を行うことが可能になる。Further, according to the present invention, the cooling mechanism of the film formation control shutter is constituted so as to circulate a predetermined refrigerant, and in particular, is constituted so that water is circulated inside the shutter main body. It is possible to efficiently cool the film formation control shutter with a simple configuration.
【００１１】[0011]
【発明の実施の形態】以下、本発明の実施の形態を図面
を参照して詳細に説明する。図１は、本発明に係る薄膜
形成装置の好ましい実施の形態の正面側断面図であり、
有機ＬＥＤ素子の有機薄膜を形成するためのものであ
る。BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. FIG. 1 is a front side sectional view of a preferred embodiment of a thin film forming apparatus according to the present invention,
It is for forming an organic thin film of an organic LED element.
【００１２】また、図２（ａ）は、同薄膜形成装置の蒸
発部の断面図、図２（ｂ）は、同蒸発部のシャッターの
外観構成を示す平面図である。FIG. 2 (a) is a sectional view of the evaporation part of the thin film forming apparatus, and FIG. 2 (b) is a plan view showing the external structure of the shutter of the evaporation part.
【００１３】図１に示すように、本実施の形態の薄膜形
成装置１は、図示しない真空排気系に接続された真空槽
２を有し、この真空槽２の下方には後述する蒸発部３が
配設されている。As shown in FIG. 1, the thin film forming apparatus 1 of the present embodiment has a vacuum tank 2 connected to a vacuum exhaust system (not shown), and below this vacuum tank 2 is an evaporation unit 3 which will be described later. Is provided.
【００１４】そして、この蒸発部３の上方近傍には、蒸
発部３から蒸発する蒸気を制御するための成膜制御用シ
ャッター（以下「シャッター」という。）７が設けられ
ている。A film formation control shutter (hereinafter referred to as "shutter") 7 for controlling vapor evaporated from the evaporation unit 3 is provided near the evaporation unit 3 above.
【００１５】一方、真空槽２の上部には、基板ホルダー
４が設けられ、この基板ホルダー４に、蒸着膜を形成す
べき基板（成膜対象物）５が固定されている。そして、
基板５の下方近傍にはマスク６が設けられている。On the other hand, a substrate holder 4 is provided above the vacuum chamber 2, and a substrate (deposition target) 5 on which a vapor deposition film is to be formed is fixed to the substrate holder 4. And
A mask 6 is provided near the lower part of the substrate 5.
【００１６】図２（ａ）（ｂ）に示すように、本実施の
形態の蒸発部３は、複数の蒸発源から構成されている。As shown in FIGS. 2 (a) and 2 (b), the evaporation unit 3 of this embodiment is composed of a plurality of evaporation sources.
【００１７】本実施の形態の場合は、ホスト材料を蒸発
させるためのホスト蒸発源３０と、ドーパント材料を蒸
発させるためのドーパント蒸発源３１とを有している。The present embodiment has a host evaporation source 30 for evaporating the host material and a dopant evaporation source 31 for evaporating the dopant material.
【００１８】これらホスト蒸発源３０とドーパント蒸発
源３１は、それぞれ細長の円筒形状の蒸発容器３２、３
３を有している。The host evaporation source 30 and the dopant evaporation source 31 are elongated cylindrical evaporation containers 32 and 3, respectively.
Have three.
【００１９】ここで、各ホスト蒸発源３０の蒸発容器３
２の内部には、所定の有機系の蒸発材料（例えばＡｌｑ
３）４０が収容され、この蒸発材料４０は、図示しない
ヒータによって加熱されるようになっている。Here, the evaporation container 3 of each host evaporation source 30
2 has a predetermined organic evaporation material (for example, Alq
3) 40 is accommodated, and the evaporation material 40 is heated by a heater (not shown).
【００２０】ここで、各ホスト蒸発源３０は、所定のピ
ッチをおいて平行に配列されている。そして、各ホスト
蒸発源３０の蒸発容器３２の上部の中央部には、その長
手方向に沿って所定の間隔で複数の蒸発口３４が直線的
に設けられている。Here, the host evaporation sources 30 are arranged in parallel at a predetermined pitch. A plurality of evaporation ports 34 are linearly provided at predetermined intervals along the longitudinal direction at the center of the upper part of the evaporation container 32 of each host evaporation source 30.
【００２１】一方、ドーパント蒸発源３１は、ホスト蒸
発源３０と隣接する位置に配設され、上記同様のピッチ
をおいて平行に配列されている。そして、各ドーパント
蒸発源３１の蒸発容器３３の内部には、所定の有機系の
蒸発材料（例えばＤＣＪＴＢ（4-dicyanomethylene-6-c
p-julolidinostyryl-2-tert-butyl-4H-pyran））４１が
収容され、この蒸発材料４１は、図示しないヒータによ
って加熱されるようになっている。On the other hand, the dopant evaporation source 31 is arranged at a position adjacent to the host evaporation source 30, and is arranged in parallel with the same pitch as described above. In the evaporation container 33 of each dopant evaporation source 31, a predetermined organic evaporation material (for example, DCJTB (4-dicyanomethylene-6-c) is used.
p-julolidinostyryl-2-tert-butyl-4H-pyran)) 41, and the evaporation material 41 is heated by a heater (not shown).
【００２２】さらに、各ドーパント蒸発源３１の蒸発容
器３３の上部の中央部には、その長手方向に沿って所定
の間隔で複数の蒸発口３５が直線的に設けられている。Further, a plurality of evaporation ports 35 are linearly provided at predetermined intervals along the longitudinal direction at the center of the upper part of the evaporation container 33 of each dopant evaporation source 31.
【００２３】一方、シャッター７は、例えば、ステンレ
ス、銅等の金属材料からなるもので、蒸発部３を覆う大
きさの平板状のシャッター本体７０を有している。On the other hand, the shutter 7 is made of a metal material such as stainless steel or copper, and has a flat plate-shaped shutter body 70 having a size that covers the evaporation portion 3.
【００２４】このシャッター本体７０には、各ホスト蒸
発源３０及びドーパント蒸発源３１に対応する複数のス
リット状の開口部７０ａが平行に形成されている。In the shutter body 70, a plurality of slit-shaped openings 70a corresponding to the host evaporation sources 30 and the dopant evaporation sources 31 are formed in parallel.
【００２５】そして、このシャッター７は、図示しない
駆動機構に連結され、開口部７０ａの幅方向に移動して
開閉動作を行うように構成されている。The shutter 7 is connected to a drive mechanism (not shown) and is configured to move in the width direction of the opening 70a to perform the opening / closing operation.
【００２６】図２（ａ）（ｂ）に示すように、本実施の
形態のシャッター７においては、シャッター本体７０の
内部に、所定の冷媒８０を循環させてシャッターの温度
を制御するためのパイプライン（冷却機構）７１が配設
されている。As shown in FIGS. 2A and 2B, in the shutter 7 of this embodiment, a pipe for circulating a predetermined coolant 80 inside the shutter body 70 to control the temperature of the shutter. A line (cooling mechanism) 71 is arranged.
【００２７】本実施の形態の場合、パイプライン７１
は、開口部７０ａの長手方向に沿って開口部７０ａの周
囲を巡るように設けられている。In the case of this embodiment, the pipeline 71
Are provided so as to circulate around the opening 70a along the longitudinal direction of the opening 70a.
【００２８】図１に示すように、このパイプライン７１
は、真空槽２の外部に設けた冷媒源８に連結されてい
る。そして、この冷媒源８から所定の冷媒８０を導入管
８１を介してパイプライン７１内に導入し、さらに、こ
の冷媒８０を排出管８２から排出して冷媒源８に戻すよ
うに構成されている。As shown in FIG. 1, this pipeline 71
Is connected to a coolant source 8 provided outside the vacuum chamber 2. Then, a predetermined coolant 80 is introduced from the coolant source 8 into the pipeline 71 through the introduction pipe 81, and further, the coolant 80 is discharged from the discharge pipe 82 and returned to the coolant source 8. .
【００２９】この冷媒源８は、冷媒８０を所定の温度に
冷却する機能を有し、シャッター本体７０から排出され
温度上昇した冷媒８０を冷却するようになっている。The coolant source 8 has a function of cooling the coolant 80 to a predetermined temperature, and cools the coolant 80 discharged from the shutter body 70 and having an increased temperature.
【００３０】本発明の場合、冷媒８０の種類は特に限定
されることはないが、コストを抑える観点からは、冷却
水を用いることが好ましい。In the case of the present invention, the type of the refrigerant 80 is not particularly limited, but it is preferable to use cooling water from the viewpoint of cost reduction.
【００３１】また、冷却水の温度も特に限定されること
はないが、有機材料を用いる本実施の形態においては、
２０℃以下に制御することが好ましい。The temperature of the cooling water is not particularly limited either, but in the present embodiment using an organic material,
It is preferable to control the temperature to 20 ° C or lower.
【００３２】このような構成を有する本実施の形態にお
いて基板５上に成膜を行う場合には、真空槽２内を所定
の圧力に調整した後、冷媒源８を動作させてシャッター
７における冷媒８０の循環を開始する。In the case of forming a film on the substrate 5 in the present embodiment having such a configuration, after adjusting the inside of the vacuum chamber 2 to a predetermined pressure, the refrigerant source 8 is operated to operate the refrigerant in the shutter 7. Begin circulation of 80.
【００３３】そして、図３に示すように、シャッター７
を閉じた状態で、蒸発部３のホスト蒸発源３０及びドー
パント蒸発源３１内の蒸発材料４０、４１の加熱を開始
する。Then, as shown in FIG.
In the closed state, heating of the evaporation materials 40 and 41 in the host evaporation source 30 and the dopant evaporation source 31 of the evaporation unit 3 is started.
【００３４】これにより、各ホスト蒸発源３０及びドー
パント蒸発源３１の蒸発口３４、３５から蒸発材料４
０、４１の蒸気が放出される。この時点では、蒸発材料
４０、４１の蒸気はシャッター７によって遮られるた
め、基板５には到達しない。As a result, the evaporation material 4 is supplied from the evaporation ports 34 and 35 of the host evaporation source 30 and the dopant evaporation source 31.
Vapors of 0 and 41 are released. At this point, the vapor of the evaporation materials 40 and 41 is blocked by the shutter 7 and does not reach the substrate 5.
【００３５】そして、蒸発材料４０、４１の蒸発速度が
所定の値に到達した時点でシャッター７を移動させ、そ
の開口部７０ａを各ホスト蒸発源３０及びドーパント蒸
発源３１の蒸発口３４、３５の直上に位置させる。Then, when the evaporation rate of the evaporation materials 40 and 41 reaches a predetermined value, the shutter 7 is moved so that the opening 70a is formed in the evaporation ports 34 and 35 of the host evaporation source 30 and the dopant evaporation source 31. Position it directly above.
【００３６】これにより、図４に示すように、シャッタ
ー７の開口部７０ａを介して蒸発材料４０、４１の蒸気
が基板５に向かうようになる。As a result, as shown in FIG. 4, the vapor of the evaporation materials 40 and 41 is directed toward the substrate 5 through the opening 70a of the shutter 7.
【００３７】そして、この状態を維持して成膜を行い、
所定の膜厚が得られた時点でシャッター７を閉じて成膜
を終了するとともに冷却水の循環を終了する。Then, while maintaining this state, a film is formed,
When the predetermined film thickness is obtained, the shutter 7 is closed to complete the film formation and the circulation of the cooling water.
【００３８】以上述べたように本実施の形態にあって
は、所定の冷却機構を有するシャッター７が基板５と蒸
発部３との間に配設されていることから、蒸発部３から
の熱がマスク６に伝わりにくく、これによりマスク６の
変形に起因する蒸着領域のずれを防止することができ、
基板５の正確な領域に膜を形成することができる。As described above, according to the present embodiment, since the shutter 7 having a predetermined cooling mechanism is arranged between the substrate 5 and the evaporation section 3, the heat from the evaporation section 3 is removed. Is less likely to be transmitted to the mask 6, and thus it is possible to prevent the displacement of the vapor deposition region due to the deformation of the mask 6,
The film can be formed on the precise region of the substrate 5.
【００３９】また、本実施の形態においては、シャッタ
ー本体７０の内部を冷媒８０が循環するように構成され
ていることから、簡素な構成で効率良くシャッター７の
冷却を行うことができる。Further, in the present embodiment, since the coolant 80 circulates inside the shutter body 70, the shutter 7 can be efficiently cooled with a simple configuration.
【００４０】なお、本発明は上述の実施の形態に限られ
ることなく、種々の変更を行うことができる。例えば、
上記実施の形態においては、シャッター本体７０の内部
にパイプライン７１を設けて冷媒８０を循環させるよう
にしたが、本発明はこれに限られず、例えば、図５
（ａ）（ｂ）に示すように、シャッター本体７０の外部
（基板５側又は蒸発部３側）にパイプライン７２を設け
て冷媒８０を循環させることも可能である。The present invention is not limited to the above-mentioned embodiment, and various modifications can be made. For example,
In the above embodiment, the pipeline 71 is provided inside the shutter body 70 to circulate the refrigerant 80, but the present invention is not limited to this, and for example, FIG.
As shown in (a) and (b), it is possible to circulate the refrigerant 80 by providing a pipeline 72 outside the shutter body 70 (on the side of the substrate 5 or the side of the evaporation unit 3).
【００４１】このような構成によれば、シャッター本体
７０の構成の簡素化を図ることが可能になる。With such a structure, the structure of the shutter body 70 can be simplified.
【００４２】また、冷媒８０の循環経路についても、プ
ロセスの条件や装置構成に応じて適宜変更することがで
きる。Also, the circulation path of the refrigerant 80 can be appropriately changed according to the process conditions and the apparatus configuration.
【００４３】さらに、本発明は有機ＬＥＤ素子の有機薄
膜を形成するための装置に限られず、種々の蒸着装置に
適用することができる。ただし、本発明は有機材料を用
いて有機ＬＥＤ素子の有機薄膜を形成する場合に特に有
効なものである。Further, the present invention is not limited to the apparatus for forming the organic thin film of the organic LED element, and can be applied to various vapor deposition apparatuses. However, the present invention is particularly effective when forming an organic thin film of an organic LED element using an organic material.
【００４４】[0044]
【発明の効果】以上述べたように本発明によれば、マス
クの変形に起因する蒸着領域のずれを防止して成膜対象
物の正確な領域に膜を形成することができる。As described above, according to the present invention, it is possible to prevent the displacement of the vapor deposition region due to the deformation of the mask and form the film on the accurate region of the film-forming target.
【図１】本発明に係る薄膜形成装置の好ましい実施の形
態の正面側断面図FIG. 1 is a front side sectional view of a preferred embodiment of a thin film forming apparatus according to the present invention.
【図２】（ａ）：同薄膜形成装置の蒸発部の断面図 （ｂ）：同蒸発部のシャッターの外観構成を示す平面図FIG. 2A is a sectional view of an evaporation part of the thin film forming apparatus. (B): A plan view showing the external configuration of the shutter of the evaporation unit.
【図３】同薄膜形成装置の成膜工程を示す説明図FIG. 3 is an explanatory view showing a film forming process of the thin film forming apparatus.
【図４】同薄膜形成装置の成膜工程を示す説明図FIG. 4 is an explanatory view showing a film forming process of the thin film forming apparatus.
【図５】（ａ）（ｂ）：本発明の他の実施の形態の要部
を示す構成図5A and 5B are configuration diagrams showing a main part of another embodiment of the present invention.
【図６】従来の有機ＬＥＤ素子を作成するための薄膜形
成装置の概略構成図FIG. 6 is a schematic configuration diagram of a thin film forming apparatus for producing a conventional organic LED element.
１…薄膜形成装置 ２…真空槽 ３…蒸発部 ５…基板
（成膜対象物） ７…成膜制御用シャッター ７１…パ
イプライン（冷却機構）DESCRIPTION OF SYMBOLS 1 ... Thin film forming apparatus 2 ... Vacuum tank 3 ... Evaporating part 5 ... Substrate (deposition object) 7 ... Deposition control shutter 71 ... Pipeline (cooling mechanism)
Claims (4)
ための真空槽と、 前記真空槽内に配設され所定の蒸発材料を蒸発させる蒸
発部と、 前記成膜対象物の近傍に配設され前記薄膜を所定のパタ
ーンで形成するためのマスクと、 前記マスクと前記蒸発部との間に配設され所定の冷却機
構を有する成膜制御用シャッターとを備えたことを特徴
とする薄膜形成装置。1. A vacuum chamber for forming a thin film on a predetermined film-forming target, an evaporating unit disposed in the vacuum chamber for evaporating a predetermined evaporation material, and the vicinity of the film-forming target. A mask for forming the thin film in a predetermined pattern, and a film formation control shutter having a predetermined cooling mechanism arranged between the mask and the evaporation unit. Thin film forming apparatus.
所定の冷媒を循環させるように構成されていることを特
徴とする請求項１記載の薄膜形成装置。2. A cooling mechanism for the film formation control shutter comprises:
The thin film forming apparatus according to claim 1, wherein the thin film forming apparatus is configured to circulate a predetermined refrigerant.
シャッター本体の内部を前記所定の冷媒が循環するよう
に構成されていることを特徴とする請求項１又は２のい
ずれか１項記載の薄膜形成装置。3. The cooling mechanism of the film formation control shutter comprises:
The thin film forming apparatus according to claim 1, wherein the predetermined refrigerant is configured to circulate inside the shutter body.
水が循環するように構成されていることを特徴とする請
求項１乃至３のいずれか１項記載のことを特徴とする薄
膜形成装置。4. The cooling mechanism of the film formation control shutter comprises:
The thin film forming apparatus according to claim 1, wherein the thin film forming apparatus is configured to circulate water.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002055283A JP4175815B2 (en) | 2002-03-01 | 2002-03-01 | Thin film forming equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002055283A JP4175815B2 (en) | 2002-03-01 | 2002-03-01 | Thin film forming equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003253433A true JP2003253433A (en) | 2003-09-10 |
| JP4175815B2 JP4175815B2 (en) | 2008-11-05 |
Family
ID=28666160
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002055283A Expired - Fee Related JP4175815B2 (en) | 2002-03-01 | 2002-03-01 | Thin film forming equipment |
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| Country | Link |
|---|---|
| JP (1) | JP4175815B2 (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011038561A1 (en) * | 2009-09-30 | 2011-04-07 | 东莞宏威数码机械有限公司 | Treatment device for vacuum deposition |
| WO2011116564A1 (en) * | 2010-03-23 | 2011-09-29 | 东莞宏威数码机械有限公司 | Shutter cooling apparatus |
| JP2012149329A (en) * | 2011-01-21 | 2012-08-09 | Ulvac Japan Ltd | Film deposition mask, film deposition apparatus, and thin film deposition method |
| CN103014630A (en) * | 2011-09-20 | 2013-04-03 | 财团法人工业技术研究院 | Evaporation device and evaporation machine |
| CN103924196A (en) * | 2013-12-31 | 2014-07-16 | 上海天马有机发光显示技术有限公司 | Vapor plating apparatus |
| CN107002233A (en) * | 2014-11-17 | 2017-08-01 | 应用材料公司 | Arrangement and coiled material coating facility are sheltered with the separation mask for coating process |
| CN109722635A (en) * | 2017-10-31 | 2019-05-07 | 佳能特机株式会社 | The manufacturing method of evaporation source, film formation device, film build method and electronic equipment |
| CN112210758A (en) * | 2020-09-23 | 2021-01-12 | 铜陵市超越电子有限公司 | Dislocation combined material furnace for metallized film evaporation |
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2002
- 2002-03-01 JP JP2002055283A patent/JP4175815B2/en not_active Expired - Fee Related
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011038561A1 (en) * | 2009-09-30 | 2011-04-07 | 东莞宏威数码机械有限公司 | Treatment device for vacuum deposition |
| WO2011116564A1 (en) * | 2010-03-23 | 2011-09-29 | 东莞宏威数码机械有限公司 | Shutter cooling apparatus |
| JP2012149329A (en) * | 2011-01-21 | 2012-08-09 | Ulvac Japan Ltd | Film deposition mask, film deposition apparatus, and thin film deposition method |
| CN103014630A (en) * | 2011-09-20 | 2013-04-03 | 财团法人工业技术研究院 | Evaporation device and evaporation machine |
| CN103924196A (en) * | 2013-12-31 | 2014-07-16 | 上海天马有机发光显示技术有限公司 | Vapor plating apparatus |
| CN107002233A (en) * | 2014-11-17 | 2017-08-01 | 应用材料公司 | Arrangement and coiled material coating facility are sheltered with the separation mask for coating process |
| CN109722635A (en) * | 2017-10-31 | 2019-05-07 | 佳能特机株式会社 | The manufacturing method of evaporation source, film formation device, film build method and electronic equipment |
| JP2019081949A (en) * | 2017-10-31 | 2019-05-30 | キヤノントッキ株式会社 | Evaporation source device, film deposition apparatus, film deposition method, and manufacturing method of electronic device |
| CN109722635B (en) * | 2017-10-31 | 2021-11-16 | 佳能特机株式会社 | Evaporation source device, film forming method, and method for manufacturing electronic device |
| CN112210758A (en) * | 2020-09-23 | 2021-01-12 | 铜陵市超越电子有限公司 | Dislocation combined material furnace for metallized film evaporation |
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