CN114645250A - Vapor deposition apparatus, perovskite battery vapor deposition method, and perovskite battery - Google Patents
Vapor deposition apparatus, perovskite battery vapor deposition method, and perovskite battery Download PDFInfo
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- CN114645250A CN114645250A CN202210307767.3A CN202210307767A CN114645250A CN 114645250 A CN114645250 A CN 114645250A CN 202210307767 A CN202210307767 A CN 202210307767A CN 114645250 A CN114645250 A CN 114645250A
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Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention provides evaporation equipment, a perovskite battery evaporation method and a perovskite battery, wherein the evaporation equipment comprises: the device comprises a first cavity, a second cavity and a substrate support, wherein the first cavity is internally provided with the substrate support, a vacuum pumping system and a substrate taking mechanism; the second cavity is internally provided with an evaporation system, the evaporation system comprises a first crucible and a second crucible, and the heating temperatures of the first crucible and the second crucible are different, so that different materials are evaporated on the substrate to form the battery piece; the isolating door, when the isolating door is opened the first cavity with the second cavity intercommunication, get the piece mechanism and be used for conveying substrate and battery piece. Therefore, feeding and discharging are completed in the first cavity, the length of equipment is shortened, uninterrupted film coating can be realized, and the cost is saved; the second cavity can simultaneously complete the evaporation of various materials, so that the battery piece can complete the preparation of all functional layers under the condition of no empty breaking.
Description
Technical Field
The application relates to the field of batteries, in particular to evaporation equipment, a perovskite battery evaporation method and a perovskite battery.
Background
Solar energy is an inexhaustible clean energy, has no geographical limitation and is distributed in every corner of the world. Perovskite solar cells are a new type of solar cell, and since 2009, with rapid development, laboratory small-size perovskite solar cells have reached efficiencies of 25.6%. The perovskite novel solar cell has high visible light absorption, simple film forming process and fast improvement of photoelectric conversion efficiency, so the perovskite novel solar cell is concerned all over the world. The industrialization of perovskite solar cells firstly needs to solve the technical problem of uniformly preparing a perovskite film layer in a large area. At present, a plurality of methods for preparing the perovskite solar cell are available, such as a spin coating method, a vacuum method, a blade coating method, a spraying method and the like. These methods can be roughly classified into a solution method in which a perovskite precursor material is completely dissolved in an organic solvent such as N, N-Dimethylformamide (DMF) or Dimethylsulfoxide (DMSO), and a perovskite film layer is prepared by spin coating, blade coating, spray coating, slit-die coating, or the like; the vacuum method is to directly prepare the precursor material of the perovskite on a substrate in a vacuum state by a thermal evaporation method, a sputtering method, a close space sublimation method (CSS), a vapor transport method (VTD), a close space vapor transport method (CSVT) and the like, and no solvent is involved in the whole process. Solution processes are difficult to achieve complete coverage on rough or defective substrates and are therefore not suitable for producing uniform film layers on textured and non-planar substrates. The vacuum method can deposit perovskite film layers on substrates with different roughness or shapes in a shape-preserving manner, while the traditional vacuum method can only prepare one or two film layers at a time, frequent air breaking, evacuation and evaporation rate adjustment are needed in the process of preparing the perovskite battery, and the comprehensive utilization rate and the research and development efficiency of equipment are lower.
Therefore, the current evaporation equipment still needs to be further improved.
Disclosure of Invention
The present invention is directed to solving, at least in part, one of the technical problems in the related art. Therefore, one object of the present invention is to provide an evaporation apparatus, which can complete the preparation of all functional films of a battery piece without breaking empty, can implement simultaneous evaporation of multiple materials, reduce the times of breaking empty and vacuum pumping, improve the efficiency of experiments, occupy a small area, and save space and cost.
In one aspect of the present invention, there is provided an evaporation apparatus including: the device comprises a first cavity, a vacuum pumping system and a chip taking mechanism, wherein a substrate support, the vacuum pumping system and the chip taking mechanism are arranged in the first cavity, the substrate support is used for placing a substrate and/or a battery chip, and the vacuum pumping system is used for vacuumizing the first cavity; the second cavity is internally provided with an evaporation system, the evaporation system comprises a first crucible and a second crucible, and the first crucible and the second crucible are heated at different temperatures so as to evaporate different materials on the substrate to form the battery piece; the isolating door is arranged between the first cavity and the second cavity, the first cavity is communicated with the second cavity when the isolating door is opened, and the substrate taking mechanism is used for conveying the substrate from the first cavity into the second cavity or conveying the battery piece from the second cavity into the first cavity. Therefore, feeding and discharging are completed in the first cavity, the length of the equipment is shortened, and the floor area of the equipment is reduced; the substrate and the cell are transferred by the cell taking mechanism, so that uninterrupted film coating can be realized, meanwhile, the cost is saved, and the source arrangement is optimized; the second cavity can simultaneously complete the evaporation of various materials, so that the battery piece can complete the preparation of all functional layers under the condition of no empty breaking.
According to some embodiments of the invention, the first crucible is disposed at the bottom of the second cavity, and the opening of the first crucible is opposite to the top of the second cavity; the second crucible is arranged at the bottom or the side wall of the second cavity, and the extending direction of the opening of the second crucible is intersected with the extending direction of the opening of the first crucible.
According to some embodiments of the invention, the bottom of the second crucible is U-shaped.
According to some embodiments of the invention, the evaporation system further comprises: a first shutter disposed proximate to the first crucible and/or the second crucible to open or close the first crucible and/or the second crucible.
According to some embodiments of the invention, the evaporation system further comprises: a plurality of second baffles are arranged to adjust the injection path of the steam in the first crucible and the second crucible.
According to some embodiments of the invention, the evaporation system further comprises: and the third baffle is arranged at the openings of the first crucible and the second crucible and is used for adjusting the evaporation radius of the steam in the first crucible and the second crucible.
According to some embodiments of the invention, the fourth baffle is disposed between the first crucible and the second crucible.
According to some embodiments of the invention, a plurality of baffle plates are arranged in the first crucible and the second crucible, openings are arranged on the baffle plates, and the openings on the adjacent baffle plates are staggered.
According to some embodiments of the invention, the first crucible is configured to be filled with organics including FAI, MAI, C60And BCP.
According to some embodiments of the invention, the second crucible is configured to be filled with an inorganic substance comprising KI, PbI or a metal2At least one of CsI, the metal comprising Cu.
According to some embodiments of the invention, the first crucible is heated at a temperature of 100 ℃ to 250 ℃.
According to some embodiments of the invention, the second crucible is heated at a temperature of 200 ℃ to 1500 ℃.
According to some embodiments of the invention, the substrate support is configured as a hollow-out, four-sided raised frame for placing the substrate and the battery piece.
According to some embodiments of the invention, the sheet taking mechanism comprises: a lifting screw; the conveying arm is connected with the upper end of the lifting screw and is used for conveying the substrate or the battery piece; the corrugated pipe is arranged on the outer side of the lifting screw rod, and the first servo motor is connected with the conveying arm and used for driving the conveying arm to extend or shorten; and the second servo motor is connected with the lower end of the lifting screw rod and is used for driving the lifting screw rod to move up and down. .
In another aspect of the invention, a method for evaporating and coating a perovskite battery is provided, and the method adopts the evaporation equipment to evaporate and coat at least one of a first charge transport layer, a perovskite layer, a second charge transport layer and an electrode layer in a battery piece.
According to some embodiments of the invention, the perovskite layer is formed by a process of co-evaporation and/or co-evaporation.
In yet another aspect of the invention, a perovskite battery is provided, which is prepared by the perovskite battery evaporation method. Therefore, all the characteristics and advantages of the perovskite battery evaporation method are provided, and detailed description is omitted, and the perovskite battery evaporation method at least has the advantage of simple preparation process.
Drawings
The above and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
fig. 1 shows a schematic structural diagram of an evaporation apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a first chamber according to another embodiment of the present invention;
FIG. 3 shows a schematic view of a substrate support according to another embodiment of the invention;
FIG. 4 shows a schematic view of the structures of a first crucible and a second crucible of another embodiment of the present invention;
FIG. 5 shows a top view of a second chamber of an embodiment of the invention;
FIG. 6 shows a side view of a second chamber during co-evaporation of a dual material according to another embodiment of the present invention;
FIG. 7 shows a side view of a second chamber during co-evaporation of four materials according to another embodiment of the present invention;
FIG. 8 shows a side view of a second chamber during dual material co-evaporation according to another embodiment of the present invention;
fig. 9 shows a schematic structural diagram of a perovskite cell according to an embodiment of the invention.
Reference numerals:
1000: a first cavity; 2000: a second cavity; 3000: a third cavity; 4000: an isolation gate; 2100: a first crucible; 2200: a second crucible; 2110: a turbulence baffle; 2120: a heating layer; 2130: a cooling layer; 2140: a thermal insulation layer; 2300: a first baffle plate; 2400: a second baffle; 2500: a third baffle plate; 2600: a fourth baffle; 2700: a guide rail; a: a substrate holder; 1100: a sheet taking mechanism; c: a lifting screw; b: a transfer arm; f: a bellows; d: a first servo motor; e: a second servo motor; i: a substrate; 100: a substrate; 200: a first charge transport layer; 300: a perovskite layer; 400: a second charge transport layer; 500: and an electrode layer.
Detailed Description
The following describes embodiments of the present invention in detail. The following examples are illustrative only and are not to be construed as limiting the invention. The examples, where specific techniques or conditions are not indicated, are to be construed according to the techniques or conditions described in the literature in the art or according to the product specifications. The reagents or instruments used are not indicated by the manufacturer, and are all conventional products commercially available.
In one aspect of the present invention, an evaporation apparatus is provided, and referring to fig. 1, the evaporation apparatus includes a first chamber 1000, a second chamber 2000, and an isolation door 4000.
Referring to fig. 2, a substrate holder a, a vacuum pumping system (not shown in the figure) and a sheet taking mechanism 1100 are disposed in the first cavity 1000, and the substrate holder a can be used for placing a substrate I that is not coated with a functional layer by evaporation and a battery sheet (not shown in the figure) that is coated with all functional layers by evaporation. After the substrate I is placed in the first cavity 1000, the vacuum pumping system is used for pumping vacuum to the first cavity 1000, so that the first cavity 1000 is in a vacuum state. It should be noted that the vacuum degree of the first chamber 1000 is not particularly limited, for example, the vacuum degree of the first chamber 1000 may be equal to or slightly less than the vacuum degree of the second chamber 2000. Therefore, after the substrate I in the second cavity 2000 completes the evaporation of the functional layer, the battery piece can be conveyed to the first cavity 1000, and then the substrate I in the first cavity 1000 is conveyed to the second cavity 2000 for evaporation of the functional layer, which is equivalent to that the feeding and discharging are all carried out in the same cavity, so that the length of the equipment in the advancing direction is reduced, and the occupied area of the equipment is reduced. It should be noted that the traveling direction referred to herein refers to a direction in which the substrate I is carried from the first chamber 1000 into the second chamber 2000.
An evaporation system is disposed in the second chamber 2000, and referring to fig. 4, the evaporation system includes a first crucible 2100 and a second crucible 2200, and the heating temperatures of the first crucible 2100 and the second crucible 2200 are different, so as to evaporate different materials on the substrate I to form a battery piece. According to some embodiments of the present invention, the first crucible 2100 is heated at a high temperature, and materials that require high temperature to be evaporated can be placed in the first crucible 2100 for evaporation; the second crucible 2200 is heated at a lower temperature, and a material that can be vaporized at a lower temperature can be placed in the second crucible 2200 for evaporation. Therefore, evaporation of different materials can be completed under the condition of no vacuum, so that different functional layers are formed on the substrate I, the times of vacuum breaking and vacuum pumping are reduced, the time required by process adjustment is shortened, and the production efficiency is improved.
The materials of the first crucible 2100 and the second crucible 2200 may be the same or different, and may be freely selected by those skilled in the art; the relative temperature of the first crucible 2100 and the second crucible 2200 is not limited, and the heating temperature of the second crucible 2200 may be higher and the heating temperature of the first crucible 2100 may be lower, and those skilled in the art can freely design according to the product requirement; the number of the first crucible 2100 and the second crucible 2200 is not limited, for example, the first crucible 2100 may be provided in plural in the traveling direction, and the second crucible 2200 may be designed according to the number of the first crucibles 2100 and the kind of material to be evaporated.
The isolation door 4000 is arranged between the first cavity 1000 and the second cavity 2000, the first cavity 1000 is communicated with the second cavity 2000 when the isolation door 4000 is opened, and the wafer taking mechanism 1100 is used for transferring the substrate I from the first cavity 1000 into the second cavity 2000 or transferring the battery wafer from the second cavity 2000 into the first cavity 1000. According to some embodiments of the present invention, after a substrate I is placed in the first cavity 1000, the first cavity 1000 and the second cavity 2000 are vacuumized, after the vacuum degree meets the requirement, the isolation door 4000 is opened to communicate the first cavity 1000 with the second cavity 2000, the substrate I can be transferred to the second cavity 2000 by the wafer taking mechanism 1100, the isolation door 4000 is closed, and the functional layer of the substrate I can be evaporated by the second cavity 2000; after the evaporation is completed, the isolation door 4000 is opened again, the wafer taking mechanism 1100 transfers the battery wafer into the first cavity 1000 and places the battery wafer on the substrate support a, and if the evaporation is required to be continued, the wafer taking mechanism 1100 can transfer the substrate I in the first cavity 1000 to the second cavity 2000 again. Therefore, in the process of continuous evaporation of the substrate I, repeated air breaking and vacuumizing can be avoided, interface pollution caused by contact of air on the interface of the film layer is avoided, and the utilization rate of equipment is improved.
According to some embodiments of the present invention, the evaporation apparatus further comprises a third cavity 3000, and specifically, the third cavity 3000 may be a power distribution cabinet.
According to some embodiments of the present invention, referring to fig. 2 and 3, a plurality of substrate holders a are provided, and each substrate holder a is provided as a frame with a hollow center and four raised sides to place a substrate I and/or a battery piece. Specifically, the number of substrate holders a in the first chamber 1000 may be selected according to the size of the first chamber 1000 and process requirements; the substrate holders a may be arranged in an unlimited manner, and in order to reduce the space of the first chamber 1000, the substrate holders a may be arranged in an up-and-down stacked manner, and adjacent substrate holders a have a certain distance therebetween for placing the substrate I and/or the battery cell.
According to some embodiments of the invention, referring to fig. 2, a sheet taking mechanism 1100 comprises: lifting screw C, transfer arm B, bellows F, first servo motor D and second servo motor E, transfer arm B links to each other with lifting screw C, and transfer arm B links to each other with lifting screw C's upper end, and transfer arm B is used for conveying substrate I or battery piece, and the bellows is established in order to completely cut off vacuum and atmosphere in the outside of lifting screw, and first servo motor D is used for driving transfer arm B extension or shortens, and second servo motor E links to each other with lifting screw C's lower extreme for the drive lifting screw C reciprocates to it reciprocates to drive transfer arm B.
According to some embodiments of the invention, the first crucible 2100 is disposed at the bottom of the second cavity 2000, the opening of the first crucible 2100 is opposite to the top of the second cavity 2000; the second crucible 2200 is disposed at the bottom or the sidewall of the second cavity 2000, and the extending direction of the opening of the second crucible 2200 intersects with the extending direction of the opening of the first crucible 2100. Specifically, when different materials are placed in the first crucible 2100 and the second crucible 2200, after the vapors of the materials in the first crucible 2100 and the second crucible 2200 are ejected from the crucible outlets, the vapors of the two materials exist in an intersection region, and when a plurality of materials need to be simultaneously evaporated on the substrate I, the substrate I is placed in the vapor intersection region, so that the co-evaporation of the plurality of materials can be completed. It should be noted that the position of the second crucible 2200 is not particularly limited, and when the second crucible 2200 is disposed on the side wall of the second cavity 2000, in order to make the steam jetted from the second crucible 2200 intersect with the steam jetted from the first crucible 2100, the opening of the second crucible 2200 may be directed to the top of the second cavity 2000; when the second crucible 2200 is disposed at the bottom of the second cavity 2000, in order to better enable the steam ejected from the second crucible 2200 to intersect with the steam ejected from the first crucible 2100, the opening of the second crucible 2200 may be inclined toward the first crucible 2100, so that the second crucible 2200 may be integrally inclined, which may effectively increase the intersecting area of the steam, improve the material utilization rate, and effectively shorten the width of the cavity.
According to some embodiments of the present invention, the shapes of the first crucible 2100 and the second crucible 2200 are not particularly limited, and in particular, since the first crucible 2100 is disposed at the bottom of the second cavity 2000, the bottom of the first crucible 2100 may be disposed in parallel with the bottom of the second cavity 2000; since the second crucible 2200 is inclined regardless of whether it is provided at the bottom or the side wall, the bottom of the second crucible 2200 may be U-shaped in order to make the heating of the raw material in the second crucible 2200 more uniform, the steam evaporated in the second crucible 2200 more uniform, and the maximum use of the material.
According to some embodiments of the present invention, the evaporation system further includes a first shutter 2300, and the first shutter 2300 is disposed near the first crucible 2100 and/or the second crucible 2200 to open or close the first crucible 2100 and/or the second crucible 2200. For example, a material for forming a first functional layer is placed in the first crucible 2100, a material for forming a second functional layer is placed in the second crucible 2200, when the first functional layer needs to be evaporated on the substrate I, the first shutter 2300 close to the first crucible 2100 is opened, the first shutter 2300 close to the second crucible 2200 is closed, and the steam of the first crucible 2100 is sprayed on the substrate I; when the first functional layer is evaporated and the second functional layer is required to be evaporated, the first shutter 2300 close to the first crucible 2100 is closed, the first shutter 2300 close to the second crucible 2200 is opened, and the steam in the second crucible 2200 is injected to the substrate I including the first functional layer. When a plurality of first crucibles 2100 and second crucibles 2200 are provided in the second chamber 2000, and so on, the vapor in each crucible can be sequentially evaporated onto the substrate I. Therefore, when a plurality of functional layers are required to be vapor-plated on the substrate I, the process can be continuously carried out, the materials are not required to be replaced in a vacuum manner, the process times of vacuum breaking and vacuumizing are reduced, interface pollution caused by contact of air on the interface of the film layer is avoided, the utilization rate of equipment is improved, and the production efficiency is improved.
According to some embodiments of the present invention, the evaporation system further includes a second shutter 2400, and the second shutter 2400 is provided in plurality to adjust a spray path of the vapor in the crucible. According to some embodiments of the present invention, referring to fig. 5 and 7, one first crucible 2100 is disposed at positions G1, G2, G3, and G4 of the second cavity 2000, respectively, four first crucibles 2100 are disposed at the bottom of the second cavity 2000 and arranged in a row in the same direction as the traveling direction of the substrate I, the first crucible 2100 of G1 contains material a, the first crucible 2100 of G2 contains material b, the first crucible 2100 of G3 contains material c, and the first crucible 2100 of G4 contains material d; in order to make the functional layer more uniform during evaporation, two second crucibles 2200 are respectively arranged at H1, H2, H3, H4, H5, H6, H7 and H8 of the second cavity 2000, wherein two second crucibles 2200 are symmetrically arranged on both sides of each first crucible 2100 in the traveling direction of the substrate I, and the two symmetrically arranged second crucibles 2200 contain the same material, i.e., H1 and H2 on both sides of G1, material e in H1 and H2, H3 and H4 on both sides of G2, material f in H3 and H4, material G in H5 and H6 on both sides of G3, material G in H5 and H6, material H7 and H8 on both sides of G4, and material H in H7 and H8.
According to some embodiments of the present invention, a guide rail 2700 is further disposed in the second cavity 2000, the substrate I reciprocates along the guide rail 2700 in the second cavity 2000, a second baffle 2400 is disposed between G1 and G2, a second baffle 2400 is disposed between G3 and G4, the height of the second baffle 2400 extends to the vicinity of the guide rail 2700, and a gap is left between the highest point of the second baffle 2400 and the guide rail 2700 to ensure that the guide rail 2700 can drive. When the second chamber starts to be evaporated, the second barrier 2400 between G1 and G2 can prevent the vapors of the materials a and b from overlapping the vapors of the materials c and d, the second barrier 2400 between G3 and G4 can prevent the vapors of the materials e and f from overlapping the vapors of the materials G and h, and for the vapors which do not overlap and directly reach the top of the second chamber 2000, the second barrier 2400 may be further disposed on the guide rail 2700 to prevent the individual materials from being evaporated onto the substrate I. Therefore, the substrate I sequentially passes through the co-evaporation areas a and b, c and d, e and f and g and h along the guide rails 2700, and co-evaporation of the materials a and b, c and d, e and f, g and h, co-evaporation of the materials c and d, e and f and g and h are achieved without empty conditions.
According to some embodiments of the present invention, referring to fig. 5 and 8, the vapor deposition apparatus proposed in the present application can also achieve co-evaporation of four materials, in which the height of the second baffle 2400 between G1 and G2, and the height of the second baffle 2400 between G3 and G4 are reduced, and referring to fig. 9, the highest point of the second baffle 2400 does not contact with the vapor injected in the crucible, there are overlapping regions of the vapors of materials a, b, c, and d, there are overlapping regions of the vapors of materials e, f, G, and h, and the second baffle 2400 is disposed on the guide rails 2700 corresponding to the regions where no overlap or only three materials, two materials overlap, prevent such vapors from being evaporated onto the substrate I. Therefore, the substrate I sequentially passes through the co-evaporation areas a, b, c and d and the co-evaporation areas e, f, g and h along the guide rails 2700, and the co-evaporation of the a, b, c and d and the co-evaporation of the e, f, g and h are completed under the condition of no emptying.
According to some embodiments of the present invention, referring to fig. 4, the evaporation system further includes a third baffle 2500, the third baffle 2500 is disposed at the opening of the crucible, and the third baffle 2500 is used for adjusting the evaporation radius of the vapor in the crucible. Specifically, the third baffle 2500 is disposed at the crucible opening, and at this time, the height of the crucible opening is increased, so that the evaporation radius of the vapor reaching the substrate I can be adjusted, and the utilization rate of the material can be increased. The third baffle 2500 may be disposed on the first crucible 2100 or the second crucible 2200, and may be designed by those skilled in the art according to the process requirements.
According to some embodiments of the present invention, referring to fig. 6, a fourth baffle 2600 is disposed between the first crucible 2100 and the second crucible 2200. Specifically, since the heating temperatures of the first crucible 2100 and the second crucible 2200 are different, in order to prevent the heat of the high temperature crucible from being transferred to the low temperature crucible, the fourth shutter 2600 may be disposed between the first crucible 2100 and the second crucible 2200. In order to further improve the heat insulation effect, a cooling water pipe (not shown) may be further disposed at a position of the fourth baffle 2600 close to the high-temperature crucible, so as to prevent heat of the high-temperature crucible from being transferred to the periphery, and reduce heat dissipation.
According to some embodiments of the present invention, referring to fig. 5, the positions of the first and second crucibles 2100 and 2200, and referring to fig. 6, when only the first and fourth baffles 2300 and 2600 are provided in the second chamber 2000, the evaporation apparatus may be used for co-evaporation of dual materials. Specifically, four first crucibles 2100 are filled with material b, eight second crucibles 2200 are filled with material a, the path of the steam ejected from the openings of the crucibles is as shown in fig. 6, and the substrate I is placed in the area where the two material steams overlap, so that co-evaporation of the two materials can be completed.
According to some embodiments of the invention, referring to fig. 4, a plurality of baffle plates 2110 can be further disposed in the crucible, wherein the baffle plates 2110 are provided with openings, and the openings of the adjacent baffle plates 2110 are staggered. Therefore, the openings in the turbulence baffle 2110 can change the evaporation path of the steam, so that the sprayed steam is more uniform. It should be noted that the number of the turbulence baffles 2110 in the crucible is not limited, and those skilled in the art can freely select the number of the turbulence baffles 2110 in the crucible, and specifically, the number of the turbulence baffles 2110 in the crucible is selected according to the size of the crucible and the properties of the material, in order to prevent the pressure above the material from being too high due to the fact that the turbulence baffles 2110 closest to the raw material in the crucible is too close to the raw material.
According to some embodiments of the invention, the first crucible 2100 may be configured to be filled with organics including FAI, MAI, C60And BCP, since the evaporation temperature of the organic material is low, the heating temperature of the first crucible 2100 may be 100 to 250 ℃, specifically, 120 ℃, 140 ℃, 160 ℃, 180 ℃, 200 ℃, 220 ℃, 240 ℃, and the like. According to some embodiments of the present invention, referring to fig. 4, in order to achieve heating of the first crucible 2100, both the sidewall and the opening of the first crucible 2100 are provided with a heating layer 2120. According to other embodiments of the invention, the second crucible 2200 is configured to be filled with inorganic substances including KI, PbI or metals2And/or CsI, and the metal includes Cu, and the heating temperature of the second crucible 2200 may be 200 to 1500 ℃, and specifically, may be 300 ℃, 400 ℃, 500 ℃, 600 ℃, 700 ℃, 800 ℃, 900 ℃, 1000 ℃, 1100 ℃, 1200 ℃, 1300 ℃, 1400 ℃, or the like, due to the high evaporation temperature of the inorganic material. According to some embodiments of the present invention, referring to fig. 4, in order to achieve heating of the second crucible 2200, the side wall and the opening of the second crucible 2200 are also provided with a heating layer 2120.
According to some embodiments of the present invention, referring to fig. 4, in order to ensure good evaporation of materials, a thermal insulation layer 2140 is disposed outside the heating layer 2120, and a thermal insulation material is disposed inside the thermal insulation layer 2140 to reduce temperature loss. The outermost of the crucible can be further provided with a cooling layer 2130, and the cooling layer 2130 can be provided with a cooling water pipe for cooling and preventing the crucible from overheating. According to some embodiments of the present invention, the crucible opening may be flared to increase the ejection radius of the vapor, and the heating layer 2120 around the ejection opening can prevent the vapor from cooling and condensing at the ejection opening.
According to some embodiments of the invention, the bottom of each crucible is provided with a substrate stage, which enables accurate temperature control of the crucible. According to other embodiments of the invention, each crucible is configured with a crystal oscillator to monitor the evaporation rate, and when different materials are placed in the crucible, the evaporation rate can be set according to the different materials.
In summary, the evaporation apparatus provided in the present application has the following advantages:
(1) a substrate I bracket A is arranged in the first cavity 1000 and is used for placing a substrate I and/or a battery piece, which is equivalent to the integration of a feeding cavity and a discharging cavity, so that the length of the equipment is shortened on the premise of continuous film coating, and the floor area of the equipment is reduced;
(2) through the design of the crucible, the baffle and the cavity, co-evaporation and concurrent evaporation of organic, inorganic and metal materials in the same cavity are realized, the preparation of all functional film layers of the perovskite battery can be completed under the condition of no vacuum breakage, the times of vacuum breakage and vacuum pumping are reduced, and the production efficiency is improved;
(3) through the design of the crucible, the baffle and the cavity, the orthogonal co-evaporation in the advancing direction can be realized, the length of equipment in the advancing direction is reduced, and the orthogonal double co-evaporation of four adjacent materials is realized at most.
In another aspect of the invention, a perovskite battery evaporation method is provided, and the method adopts the evaporation device to evaporate and coat at least one of the first charge transport layer, the perovskite layer, the second charge transport layer and the electrode layer in the battery piece. In other words, the vapor deposition method for the perovskite battery provided by the application can adopt the equipment to complete vapor deposition of one functional layer of the battery, and other functional layers are prepared by adopting other processes.
According to some embodiments of the present invention, the vapor deposition method for the perovskite battery provided by the present application may use the vapor deposition apparatus described above to complete vapor deposition of all functional layers of the perovskite battery. When a functional layer is evaporated, a person skilled in the art can select sequential evaporation or co-evaporation according to actual conditions. Therefore, in the process of evaporating the perovskite battery, the method realizes co-evaporation and concurrent evaporation of organic, inorganic and metal materials in the same cavity through the design of the crucible, the baffle and the cavity, can complete evaporation of all functional layers without breaking the space, reduces the times of breaking the space and vacuumizing, and improves the production efficiency.
According to some embodiments of the invention, the perovskite layer is formed by co-evaporation. That is, the perovskite layer may be formed by only the forward evaporation or by the co-evaporation.
In another aspect of the invention, a perovskite battery is provided, which is prepared by the evaporation method of the perovskite battery. Therefore, the perovskite battery at least has the advantages of simple preparation process and good electrical property.
According to some embodiments of the invention, referring to fig. 9, a perovskite battery includes: the perovskite-type charge transport layer comprises a substrate 100, a first charge transport layer 200, a perovskite layer 300, a second charge transport layer 400 and an electrode layer 500, wherein the first charge transport layer 200 is arranged on one side of the substrate 100, the perovskite layer 300 is arranged on one side, away from the substrate 100, of the first charge transport layer 200, the second charge transport layer 400 is arranged on one side, away from the first charge transport layer 200, of the perovskite layer 300, and the electrode layer 500 is arranged on one side, away from the perovskite layer 300, of the second charge transport layer 400.
According to some embodiments of the present invention, the substrate 100 comprises a conductive glass substrate or a textured substrate, the conductive glass comprising tin-doped indium oxide (ITO) conductive glass or fluorine-doped tin oxide (FTO) conductive glass, or the like; the textured substrate comprises a crystalline silicon textured substrate of the perovskite-silicon tandem solar cell and other textured substrates.
According to some embodiments of the present invention, the material forming the first charge transport layer 100 includes, but is not limited to, cuprous thiocyanate (CuSCN), cuprous iodide (CuI), cupric oxide (CuO), cuprous oxide (Cu)2O), nickel oxide (NiO), vanadium pentoxide (V)2O5) Molybdenum trioxide (MoO)3)、Spiro-OMeTAD、P3HT, PTAA, PEDOT: PSS, titanium dioxide (TiO)2) Tin dioxide (SnO)2) Mixing, addingZinc Tin Oxide (ZTO), cadmium sulfide (CdS), fullerene (C)60) Magnesium-doped zinc oxide (ZMO), zinc oxide (ZnO), PCBM, and the like. Specifically, the first charge transport layer 100 has a thickness of 0.1nm to 50 nm.
According to some embodiments of the invention, the perovskite layer 300 may be an all-inorganic perovskite, an all-organic perovskite, an organic-inorganic hybrid perovskite, and the materials forming the perovskite layer 300 include, but are not limited to, CsPbI3、FAPbI3、MAPbI3、FACsPbI3、FACsPbI2Br、FAMACsPbI3And the like.
According to some embodiments of the present invention, the material forming the second charge transport layer 400 includes, but is not limited to, cuprous thiocyanate (CuSCN), cuprous iodide (CuI), cupric oxide (CuO), cuprous oxide (Cu2O), nickel oxide (NiO), vanadium pentoxide (V)2O5) Molybdenum trioxide (MoO)3)、Spiro-OMeTAD、P3HT, PTAA, PEDOT: PSS, titanium dioxide (TiO)2) Tin dioxide (SnO)2) Zinc-doped tin oxide (ZTO), cadmium sulfide (CdS), fullerene (C)60) Magnesium-doped zinc oxide (ZMO), zinc oxide (ZnO), PCBM, and the like. Specifically, the thickness of the second charge transport layer 400 may be 5nm to 50 nm.
According to some embodiments of the present invention, the material forming the electrode layer 500 may be a metal, a transparent conductive oxide, or the like, wherein the metal includes, but is not limited to, silver (Ag), copper (Cu), gold (Au), aluminum (Al), molybdenum (Mo), chromium (Cr), or the like, and particularly, the metal has a thickness of 40nm to 100nm when forming the electrode layer 500. The transparent conductive oxide includes, but is not limited to, tin-doped indium oxide (ITO), aluminum-doped zinc oxide (AZO), tungsten-doped indium oxide (IWO), and zinc-doped indium oxide (IZO), and the thickness of the transparent conductive oxide is 50nm to 100nm when the transparent conductive oxide forms the electrode layer 500.
Example 1
(1) Evaporating a NiO film with the thickness of 30nm on FTO conductive glass at a deposition rate
The temperature is room temperature;
(2) KI is deposited on the surface of NiO far away from FTO to serve as a passivation layer, the thickness of KI is 4nm, and the deposition rate is high
(3) Cis-evaporating PbI on the surface of the passivation layer far away from NiO2CsI and FAI, PbI2Has a thickness of 300nm and a deposition rate
CsI thickness of 25nm and deposition rate of
FAI partial pressure 1.0X10-3Pa, the substrate temperature is 50 ℃, and finally a perovskite layer is formed;
(4) deposition of C on the surface of the perovskite layer remote from the passivation layer60And BCP as a second charge transport layer, wherein C60Has a thickness of 10nm, a thickness of 8nm for BCP, and deposition rates of all
The substrate is not heated in the deposition process;
(5) depositing Cu on the surface of the second charge transport layer far away from the perovskite layer as an electrode layer, wherein the thickness of the Cu is 80nm, and the deposition rate is
The perovskite battery can be formed.
The perovskite cell prepared in this example was subjected to electrochemical tests, the results of which are shown in table 1.
Example 2
(1) Evaporating a NiO film with the thickness of 25nm on FTO conductive glass at a deposition rate
The temperature is room temperature;
(2) depositing 6nm KI on the NiO surface far away from FTO as a passivation layer, wherein the deposition rate is
(3) Co-evaporating the surface of the passivation layer far away from NiO to form a perovskite layer, and simultaneously depositing PbI at the same position of the passivation layer far away from the substrate2CsI and FAI, PbI2Has a thickness of 300nm and a deposition rate
CsI 23nm thick and deposition rate
FAI partial pressure 1.0X10-3Pa, the substrate temperature is 55 ℃, and a perovskite layer is formed in situ;
(4) deposition of C on the surface of the perovskite layer remote from the passivation layer60And BCP as a second charge transport layer, wherein C60Has a thickness of 10nm, a thickness of BCP of 8nm and deposition rates of all
The substrate is not heated in the deposition process;
(5) depositing Cu on the surface of the second charge transport layer far away from the perovskite layer as an electrode layer, wherein the thickness of the Cu is 80nm, and the deposition rate is
The perovskite battery can be formed.
The perovskite cell prepared in this example was subjected to electrochemical tests, the test results of which are shown in table 2.
TABLE 1
| Current Density (mA) | Open circuit voltage (V) | Conversion (%) | Filling agentSeed of Japanese apricot |
| 24.93 | 0.98 | 18.8 | 78.84 |
| 24.91 | 0.98 | 18.4 | 76.81 |
TABLE 2
| Current Density (mA) | Open circuit voltage (V) | Conversion (%) | Fill factor |
| 24.5 | 0.96 | 17.59 | 77.40 |
| 24.4 | 0.96 | 17.14 | 75.56 |
The electrochemical data of the perovskite battery prepared by the evaporation equipment can be seen that the evaporation equipment can be used for preparing all functional layers of the perovskite battery, and the electrochemical data of the prepared perovskite battery can also reach a higher process level. The device is a feasible and efficient novel perovskite coating device.
In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the invention and to simplify the description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and are therefore not to be considered limiting of the invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through an intermediate. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
In the description of the specification, reference to the description of "one embodiment," "some embodiments," "an example," "a specific example," or "some examples" or the like means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.
Claims (10)
1. An evaporation apparatus, comprising:
the device comprises a first cavity, a vacuum pumping system and a chip taking mechanism, wherein a substrate support, the vacuum pumping system and the chip taking mechanism are arranged in the first cavity, the substrate support is used for placing a substrate and/or a battery chip, and the vacuum pumping system is used for vacuumizing the first cavity;
the second cavity is internally provided with an evaporation system, the evaporation system comprises a first crucible and a second crucible, and the first crucible and the second crucible are heated at different temperatures so as to evaporate different materials on the substrate to form the battery piece;
the isolating door is arranged between the first cavity and the second cavity, the first cavity is communicated with the second cavity when the isolating door is opened, and the wafer taking mechanism is used for conveying the substrate from the first cavity into the second cavity or conveying the battery wafer from the second cavity into the first cavity.
2. The evaporation apparatus according to claim 1, wherein the first crucible is disposed at the bottom of the second chamber, and the opening of the first crucible is opposite to the top of the second chamber;
the second crucible is arranged at the bottom or the side wall of the second cavity, and the extending direction of the opening of the second crucible is intersected with the extending direction of the opening of the first crucible;
optionally, the bottom of the second crucible is U-shaped.
3. The evaporation apparatus according to claim 2, wherein the evaporation system further comprises:
a first shutter disposed proximate to the first crucible and/or the second crucible to open or close the first crucible and/or the second crucible.
4. The evaporation apparatus according to claim 3, wherein said evaporation system further comprises: a plurality of second baffles are arranged to adjust the injection path of the steam in the first crucible and/or the second crucible.
5. The evaporation apparatus according to claim 4, wherein said evaporation system further comprises: the third baffle plate is arranged at the opening of the first crucible and/or the second crucible, and the third baffle plate is used for adjusting the evaporation radius of steam in the first crucible and/or the second crucible;
optionally, the fourth baffle is disposed between the first crucible and the second crucible.
6. The evaporation equipment according to claim 2, wherein a plurality of turbulence baffles are arranged in the first crucible and/or the second crucible, openings are arranged on the turbulence baffles, and the openings on the adjacent turbulence baffles are staggered.
7. An evaporation apparatus according to claim 2, wherein the first crucible is configured to be filled with organics including FAI, MAI, C60And BCP;
optionally, the second crucible is configured to be filled with an inorganic substance comprising KI, PbI or a metal2At least one of CsI, the metal comprising Cu;
optionally, the heating temperature of the first crucible is 100-250 ℃;
optionally, the heating temperature of the second crucible is 200 ℃ to 1500 ℃.
8. The evaporation equipment according to claim 1, wherein the substrate support is provided in plurality, each substrate support is provided with a frame with a hollow middle part and four convex sides for placing the substrate and/or the battery piece;
optionally, the sheet taking mechanism comprises:
a lifting screw;
the conveying arm is connected with the upper end of the lifting screw rod and is used for conveying the substrate or the battery piece;
the corrugated pipe is arranged on the outer side of the lifting screw;
the first servo motor is connected with the conveying arm and used for driving the conveying arm to extend or shorten;
and the second servo motor is connected with the lower end of the lifting screw rod and is used for driving the lifting screw rod to move up and down.
9. A perovskite battery evaporation method is characterized in that at least one of a first charge transport layer, a perovskite layer, a second charge transport layer and an electrode layer in a battery piece is evaporated by adopting the evaporation equipment as claimed in any one of claims 1 to 8;
optionally, the perovskite layer is formed by a co-steaming and/or co-steaming process.
10. A perovskite battery produced by the method as set forth in claim 9.
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| CN202210307767.3A CN114645250A (en) | 2022-03-25 | 2022-03-25 | Vapor deposition apparatus, perovskite battery vapor deposition method, and perovskite battery |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115354294A (en) * | 2022-08-04 | 2022-11-18 | 无锡极电光能科技有限公司 | Evaporation device and method for preparing perovskite battery by using evaporation device |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004043965A (en) * | 2002-05-17 | 2004-02-12 | Semiconductor Energy Lab Co Ltd | Holder of vapor deposition source, vapor deposition equipment, vapor deposition method and producing method of luminescence equipment |
| CN1550568A (en) * | 2003-04-25 | 2004-12-01 | ��ʽ����뵼����Դ�о��� | Manufacturing device and light emitting device |
| JP2013108106A (en) * | 2011-11-17 | 2013-06-06 | Hitachi High-Technologies Corp | Vapor deposition apparatus and method for operating vapor deposition apparatus |
| CN207596942U (en) * | 2017-11-08 | 2018-07-10 | 深圳市柔宇科技有限公司 | Evaporation coating device |
| CN109722635A (en) * | 2017-10-31 | 2019-05-07 | 佳能特机株式会社 | The manufacturing method of evaporation source, film formation device, film build method and electronic equipment |
| CN112063988A (en) * | 2020-08-24 | 2020-12-11 | 福建华佳彩有限公司 | Metal processing equipment and driving method |
| CN113451516A (en) * | 2021-06-29 | 2021-09-28 | 无锡极电光能科技有限公司 | Device and method for producing perovskite absorption layers and use thereof |
| CN214934010U (en) * | 2021-04-12 | 2021-11-30 | 江苏集萃有机光电技术研究所有限公司 | Manipulator conveying system |
-
2022
- 2022-03-25 CN CN202210307767.3A patent/CN114645250A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004043965A (en) * | 2002-05-17 | 2004-02-12 | Semiconductor Energy Lab Co Ltd | Holder of vapor deposition source, vapor deposition equipment, vapor deposition method and producing method of luminescence equipment |
| CN1550568A (en) * | 2003-04-25 | 2004-12-01 | ��ʽ����뵼����Դ�о��� | Manufacturing device and light emitting device |
| JP2013108106A (en) * | 2011-11-17 | 2013-06-06 | Hitachi High-Technologies Corp | Vapor deposition apparatus and method for operating vapor deposition apparatus |
| CN109722635A (en) * | 2017-10-31 | 2019-05-07 | 佳能特机株式会社 | The manufacturing method of evaporation source, film formation device, film build method and electronic equipment |
| CN207596942U (en) * | 2017-11-08 | 2018-07-10 | 深圳市柔宇科技有限公司 | Evaporation coating device |
| CN112063988A (en) * | 2020-08-24 | 2020-12-11 | 福建华佳彩有限公司 | Metal processing equipment and driving method |
| CN214934010U (en) * | 2021-04-12 | 2021-11-30 | 江苏集萃有机光电技术研究所有限公司 | Manipulator conveying system |
| CN113451516A (en) * | 2021-06-29 | 2021-09-28 | 无锡极电光能科技有限公司 | Device and method for producing perovskite absorption layers and use thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115354294A (en) * | 2022-08-04 | 2022-11-18 | 无锡极电光能科技有限公司 | Evaporation device and method for preparing perovskite battery by using evaporation device |
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