CN107994123A - A kind of Ca-Ti ore type solar cell and preparation method thereof - Google Patents
A kind of Ca-Ti ore type solar cell and preparation method thereof Download PDFInfo
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- CN107994123A CN107994123A CN201711282011.3A CN201711282011A CN107994123A CN 107994123 A CN107994123 A CN 107994123A CN 201711282011 A CN201711282011 A CN 201711282011A CN 107994123 A CN107994123 A CN 107994123A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical class CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 claims abstract description 41
- 238000000034 method Methods 0.000 claims abstract description 34
- 239000000463 material Substances 0.000 claims abstract description 23
- JTCFNJXQEFODHE-UHFFFAOYSA-N [Ca].[Ti] Chemical compound [Ca].[Ti] JTCFNJXQEFODHE-UHFFFAOYSA-N 0.000 claims abstract description 12
- 230000005540 biological transmission Effects 0.000 claims abstract description 11
- 239000010936 titanium Substances 0.000 claims abstract description 10
- 230000027756 respiratory electron transport chain Effects 0.000 claims abstract description 8
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 claims description 24
- 238000004528 spin coating Methods 0.000 claims description 14
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 claims description 10
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical group O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 7
- XDXWNHPWWKGTKO-UHFFFAOYSA-N 207739-72-8 Chemical compound C1=CC(OC)=CC=C1N(C=1C=C2C3(C4=CC(=CC=C4C2=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC(=CC=C1C1=CC=C(C=C13)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 XDXWNHPWWKGTKO-UHFFFAOYSA-N 0.000 claims description 6
- 150000003839 salts Chemical class 0.000 claims description 6
- ZXMGHDIOOHOAAE-UHFFFAOYSA-N 1,1,1-trifluoro-n-(trifluoromethylsulfonyl)methanesulfonamide Chemical compound FC(F)(F)S(=O)(=O)NS(=O)(=O)C(F)(F)F ZXMGHDIOOHOAAE-UHFFFAOYSA-N 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 229940046892 lead acetate Drugs 0.000 claims description 5
- YSHMQTRICHYLGF-UHFFFAOYSA-N 4-tert-butylpyridine Chemical compound CC(C)(C)C1=CC=NC=C1 YSHMQTRICHYLGF-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
- 229910052744 lithium Inorganic materials 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 150000002466 imines Chemical class 0.000 claims 2
- LZOZLBFZGFLFBV-UHFFFAOYSA-N sulfene Chemical compound C=S(=O)=O LZOZLBFZGFLFBV-UHFFFAOYSA-N 0.000 claims 2
- 238000005092 sublimation method Methods 0.000 abstract description 6
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 abstract 1
- 239000010408 film Substances 0.000 description 15
- 239000010409 thin film Substances 0.000 description 9
- 239000013078 crystal Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000004062 sedimentation Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000000280 densification Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- RQQRAHKHDFPBMC-UHFFFAOYSA-L lead(ii) iodide Chemical compound I[Pb]I RQQRAHKHDFPBMC-UHFFFAOYSA-L 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000005622 photoelectricity Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a kind of Ca-Ti ore type solar cell and preparation method thereof.The Ca-Ti ore type solar cell, including FTO, electron transfer layer, perovskite, hole transmission layer, electrode；Wherein, the calcium titanium ore bed is made with simple close spaced sublimation method.The material for forming perovskite is selected from least one of acetyl acetone salt and acetate.The method not only reduces cost, but also energy low temperature preparation, film coverage also greatly improve, and can be used for doing broad area device, possible ways are provided for the industrialization in future.
Description
Technical field
The invention belongs to perovskite area of solar cell, is related to a kind of Ca-Ti ore type solar cell and its preparation side
Method.
Background technology
Nearest hybrid inorganic-organic perovskite solar cell is paid much attention in photovoltaic technology field, due to high current-carrying
Transport factor, low exciton binding energy, absorption coefficient is high, and the advantage of suitable band gap, perovskite material is considered as preferable photovoltaic
Material.Benefit from from chemistry, material and the contribution of physics community, the transfer efficiency of perovskite solar cell is 7 years short
It is interior that present 22.1% has been greatly improved from be initially reported 3.8%.
The quality of perovskite thin film has vital effect to the performance of perovskite battery, has there is document report mistake
A variety of methods for improving perovskite thin film quality, such as：One step spin-coating method, successive sedimentation method, coevaporation method, gas phase auxiliary liquid phase
Method.For a step spin-coating method, when spin coater rotates at a high speed, solvent volatilizees, and forms perovskite crystal grain, in this case, solvent
Quick volatilization, PbI2With CH3NH3The fast reaction of I makes the growth of its unmanageable perovskite crystal grain, induces the formation of pin hole, most
Cause the low coverage rate of perovskite thin film eventually.Use PbCl2Or Pb (Ac)2May be more smooth as lead source perovskite thin film, cover
Cover degree is more preferable, but the unfavorable product that forms a film to perovskite may be discharged in film formation process, influences the purity of film.
Therefore, Gra ¨ tzel et al. use successive sedimentation method.This first relates to lead source PbI2Deposition, then PbI2
Immerse CH3NH3I or in PbI2Spin coating CH on film3NH3I solution, produces perovskite crystal.This method has been successfully applied to porous
In nanostructured, but the perovskite solar cell of plane is difficult to apply to, because without supporting structure, CH3NH3I molecules will
Penetrate into the PbI of densification2Much more difficult in film, this will cause PbI2Incomplete reaction.
Involved in coevaporation method to distilling CH at the same time in high vacuum conditions3NH3I and PbI2, co-deposited organic and nothing
Machine material.This method can obtain the perovskite thin film of densification and non-porous high quality.But the technology of this high vacuum
Can a large amount of elapsed times and energy.
In order to solve this problem, the method for steam assisted solution is suggested, herein, CH3NH3I steam and pre-deposition
PbI2Film reaction generates perovskite active layer, can obtain 1 micron of perovskite crystal grain in this way.However, this side
Method is difficult the CH of accurate control distillation3NH3The amount of I steam, causes PbI2Uneven reaction, especially for the device of large area
Part.
A step spin-coating method mentioned above and successive sedimentation method and the method for steam assisted solution cannot all prepare high-quality
The broad area device of amount, coevaporation method will be related to high vacuum, so expending energy and time.
The content of the invention
The object of the present invention is to provide a kind of Ca-Ti ore type solar cell, another object is to provide the preparation of this battery
Method.
To achieve the above object, technical scheme is as follows,
A kind of preparation method of Ca-Ti ore type solar cell, the preparation process of the calcium titanium ore bed are as follows：
1) MAI, lead source material, MACl are individually placed to flatten in graphite；
2) it is central in hot plate to place the MAI that step 1) presses, the FTO glass that spin coating has compacted zone is placed on mask plate
Center, spin coating have the one side of compacted zone and the MAI pressed to place face-to-face, and distance is 1~3cm, is vacuumized after reaching 0.1MPa
Hot plate temperature is risen to 120~150 DEG C, closing temperature switchs after 20~30min, obtains preparing the slice, thin piece for there are MAI layers；
3) after treating that temperature is fallen, the lead source material that step 1) presses is placed on hot plate center, is continued step 2)
Slice, thin piece is placed on above lead source material as stated above, and hot plate temperature then is risen to 110 DEG C~130 under normal pressure state
DEG C, closing temperature switchs after 30~40min；
4) after treating that temperature is fallen, the MAI that step 1) is pressed is placed on hot plate center, continues to press the slice, thin piece of step 3)
The above method is placed, and vacuumizes to reach hot plate temperature is risen to 130~150 DEG C after 0.1MPa, closing temperature after 30~40min
Switch；
5) after treating that temperature is fallen, slice, thin piece is continued to be placed on as stated above above the MACl that step 1) presses, is taken out true
Sky reaches rises to 100~120 DEG C after 0.1MPa by hot plate temperature, and closing temperature switchs after 5~10min, then by slice, thin piece into
100~110 DEG C of annealing of row, so as to complete the growth of calcium titanium ore bed.
The lead source material is acetylacetone,2,4-pentanedione lead or lead acetate.
Spin coating described in step 2) has the one side of compacted zone and the MAI pressed to place face-to-face, and distance is 2cm.
Ca-Ti ore type solar cell prepared by the method, includes FTO, electron transfer layer, calcium titanium successively from lower from upper
Ore bed, hole transmission layer and electrode.
The thickness of the calcium titanium ore bed is 300-400nm.
The material of the electron transfer layer is TiO2。
The material of the hole transmission layer is spiro-OMeTAD, 4- tert .-butylpyridine, double trifluoromethanesulfonimide lithiums
Acetonitrile solution, FK102 salt and chlorobenzene.
Spiro-OMeTAD, 4- tert .-butylpyridine, double trifluoromethanesulfonimide lithiums, the use of FK102 salt and chlorobenzene
It is 0.1g to measure ratio：9.6μL：13.6mg：21mg：1mL, the amount ratio of acetonitrile and double trifluoromethanesulfonimide lithiums is 1ml：
170mg。
The material of the electrode is gold or silver.
Wherein, the calcium titanium ore bed is formed using the growth of simple close spaced sublimation method.
The FTO thickness about 450nm, TiO2 compacted zones about 10nm-50nm, perovskite about 300nm-400nm, sky
Cave transport layer Spiro-OMETAD thickness is 200-300nm, Ag or Au electrode 120nm.
Spiro-OMeTAD is
2,2’,7,7’-tetrakis(N,N-p-dimethoxy-phenylamino)-9,9’-spirobifluorene
Abbreviation.
The film forming mechanism of the above method：
A thin layer of MAI is deposited on FTO glass first, is to allow the perovskite of generation to be given birth to full crystal grain
Long, if not depositing this layer of MAI, perovskite crystal grain into acicular growth, will be unfavorable for the transmission of carrier.Lead acetate or
After above, the MAI to distil afterwards is reacted for acetylacetone,2,4-pentanedione lead deposit, just generates the perovskite thin film of MAPbI3.Again
Distil a thin layer of MACl, to reduce the formation of surface defect, makes film more smooth.
In above-mentioned Ca-Ti ore type solar cell, the preparation method of electron transfer layer and Ag or Au electrodes is conventional side
Method, can be prepared according to existing preparation method.
It can refer to following document：
Highly Efficient Perovskite Solar Cells with Substantial Reduction of
Lead Content.Liu C,Fan J,Li H,et al.Scientific reports,2016,6.
Compared with prior art, the advantages of the present invention are as follows：
(1) after electron transfer layer is prepared, perovskite close spaced sublimation method is generated into perovskite thin film.Source is placed first
On hot plate, FTO glass being placed on mask plate, source and FTO are placed face-to-face, and distance is 2cm, then vacuumizes heating,
Material is sublimate on FTO glass from level to level, one layer of modification is finally carried out again and makes perovskite reaction more complete.This method both may be used
With low temperature preparation (not more than 150 DEG C), film defects also greatly reduce, and film coverage also greatly improves, and can be used for
Broad area device is done, possible ways are provided for the industrialization in future.What source material of the present invention was used compared to high vacuum evaporation
PbI2Although the price of acetylacetone,2,4-pentanedione lead is about PbI24 times, but acetylacetone,2,4-pentanedione lead dosage of the present invention is few, and can repeat
Utilize, production cost can be greatly reduced, be of great significance for the practical application of perovskite solar cell.Present invention system
The standby time is short, and the evaporation of high temperature needs the long period to cool down, but the present invention need to only never exceed 150 DEG C of temperature drop
Temperature, each layer prepares temperature fall time and can about save 30min, and whole process, which calculates, saves the plenty of time.
(2) this method has the perovskite thin film of high uniformity, only need to simply control acetylacetone,2,4-pentanedione lead and MAI thickness
The distance in degree, the reaction time of MAI steam and the space that distils can obtain.
Brief description of the drawings
Fig. 1 is the battery structure figure of Examples 1 and 2.
Fig. 2 is the XRD curves of Examples 1 and 2.
Fig. 3 is the J-V curves of Examples 1 and 2.
Embodiment
With reference to specific embodiment, the present invention is further elaborated, but the present invention is not limited to following embodiments.Institute
It is conventional method unless otherwise instructed to state method.The raw material can be obtained from open commercial sources unless otherwise instructed.
Embodiment 1, simple close spaced sublimation method prepare the perovskite solar cell that acetylacetone,2,4-pentanedione lead is lead source
1) electron transfer layer is prepared
The preparation of compact film：
Conventionally prepared, compact film is prepared according to the method that following documents provide：Lead
Iodide Perovskite Sensitized All-Solid-State Submicron Thin Film Mesoscopic
Solar Cell with Efficiency Exceeding 9%, H.S.Kim, C.R.Lee, J.H.Im, K.B.Lee,
T.Moehl,A.Marchioro,S.J.Moon,R.Humphry-Baker,J.H.Yum,J.E.Moser,M.Gratzel and
N.G.Park,Scientific Reports,2012,2,591；
Concretely comprise the following steps：
Titanium dioxide dense layer is prepared using spin-coating method, the precursor solution of compacted zone is filled into conductive glass surface,
Rotating speed is rejection film 60s under the conditions of 2000rpm.After film is placed into be preheating on 100 degree of hot plate immediately and heats 10min
It is fully hydrolyzed, and at 500 degree, heats 30min.The thickness of compacted zone about 30nm.
2) preparation of calcium titanium ore bed：
MAI, acetylacetone,2,4-pentanedione lead, MACl are individually placed to flatten in graphite, obtain source material；
The FTO glass that spin coating has compacted zone is placed on to the middle position of mask plate, is tipped upside down on the MAI pressed, is taken out
Hot plate temperature is risen to 150 DEG C after vacuum, closing temperature switchs after 30min；
After treating that temperature is fallen, the acetylacetone,2,4-pentanedione lead pressed is placed on hot plate center, continues slice, thin piece being placed on above,
Then hot plate temperature is risen to 130 DEG C under normal pressure state, closing temperature switchs after 40min；
After treating that temperature is fallen, the MAI pressed before is placed on hot plate center, continues slice, thin piece being placed on above, takes out
Hot plate temperature is risen to 150 DEG C after vacuum, closing temperature switchs after 40min；
After treating that temperature is fallen, slice, thin piece is placed on above the MACl pressed, hot plate temperature is risen to 120 after vacuumizing
DEG C, closing temperature switchs after 10min, slice, thin piece then is carried out 110 DEG C of annealing, so as to complete the growth of calcium titanium ore bed.
3) hole transmission layer is prepared
2000rpm is used in one layer of hole transmission layer of surface spin coating of perovskite obtained by step 2), spin coating, keeps 45s,
The thickness of gained hole transmission layer is about 400nm；
Wherein, hole transmission layer is made of following material：spiro-OMeTAD(2,2’,7,7’-tetrakis(N,N-p-
Dimethoxy-phenylamino) -9,9 '-spirobifluorene) 9.6 μ L of 0.1g, 4- tert .-butylpyridine, double fluoroforms
(amount ratio of double trifluoromethanesulfonimide lithiums and acetonitrile is 170mg to the acetonitrile solution of sulfimide lithium：1ml)80μL、FK102
(amount ratio of FK102 salt and acetonitrile is 260mg to the acetonitrile solution of salt：1ml) 13 μ L and chlorobenzene 1mL.
4) Ag/Au electrodes are deposited
The electrode evaporation on hole transmission layer, evaporation rate areVacuum is in 1.0*10-3Below Pa, thickness of electrode
It is specially 120nm for 80nm-200nm.
In AM1.5,100mW/cm2The J-V performance curves of the battery are tested under illumination with KEITHLEY 4200, in Fig. 3
Shown, the short-circuit current density for obtaining battery is 21.23mA/cm2, open-circuit voltage 0.90V, fill factor, curve factor 0.72, photoelectricity
Transfer efficiency is 14.01%.
Embodiment 2, simple close spaced sublimation method prepare the perovskite solar cell that lead acetate is lead source
The step of according to embodiment 1, acetylacetone,2,4-pentanedione lead used in step 2) is only replaced with into lead acetate, temperature used is 110
℃。
In AM1.5,100mW/cm2The J-V performance curves of the battery are tested under illumination with KEITHLEY 4200, in Fig. 3
Shown, the short-circuit current density for obtaining battery is 20.05mA/cm2, open-circuit voltage 0.87V, fill factor, curve factor 0.73, photoelectricity
Transfer efficiency is 12.95%.
Perovskite solar cell is prepared by simple close spaced sublimation method, both can be also big with low temperature preparation, film coverage
It is big to improve, it can be used for doing broad area device, possible ways are provided for the industrialization in future.In short, the present invention can be big
It is big to reduce production cost, it is of great significance for the practical application of perovskite solar cell.
Claims (9)
1. a kind of preparation method of Ca-Ti ore type solar cell, it is characterised in that the preparation process of the calcium titanium ore bed is as follows：
1) MAI, lead source material, MACl are individually placed to flatten in graphite；
2) it is central in hot plate to place the MAI that step 1) presses, the FTO glass that spin coating has compacted zone is placed in mask plate
Centre, spin coating has the one side of compacted zone and the MAI pressed to place face-to-face, apart from being 1-3cm, vacuumizes and reaches heat after 0.1MPa
Plate temperature rises to 120-150 DEG C, and closing temperature switchs after 20-30min, obtains preparing the slice, thin piece for having MAI layers；
3) after treating that temperature is fallen, the lead source material that step 1) presses is placed on hot plate center, is continued the slice, thin piece of step 2)
It is placed on as stated above above lead source material, hot plate temperature is then risen to 110 DEG C -130 DEG C under normal pressure state, 30-
Closing temperature switchs after 40min；
4) after treating that temperature is fallen, the MAI that step 1) is pressed is placed on hot plate center, continues the slice, thin piece by step 3) by above-mentioned
Method is placed, and vacuumizes to reach hot plate temperature is risen to 130-150 DEG C after 0.1MPa, and closing temperature switchs after 30-40min；
5) after treating that temperature is fallen, slice, thin piece is continued to be placed on as stated above above the MACl that step 1) presses, vacuumizes and reaches
Hot plate temperature is risen to 100-120 DEG C after to 0.1MPa, closing temperature switchs after 5-10min, and slice, thin piece then is carried out 100-
110 DEG C of annealing, so as to complete the growth of calcium titanium ore bed.
2. according to the method described in claim 1, it is characterized in that, the lead source material is acetylacetone,2,4-pentanedione lead or lead acetate.
3. according to the method described in claim 1, it is characterized in that, the spin coating described in step 2) has the one side of compacted zone and presses
MAI place face-to-face, distance be 2cm.
4. any one of claims 1 to 3 the method prepare Ca-Ti ore type solar cell, from it is lower from it is upper successively include FTO,
Electron transfer layer, calcium titanium ore bed, hole transmission layer and electrode.
5. battery according to claim 4, it is characterised in that：The thickness of the calcium titanium ore bed is 300-400nm.
6. battery according to claim 4, it is characterised in that：The material of the electron transfer layer is TiO2。
7. battery according to claim 4, it is characterised in that：The material of the hole transmission layer for spiro-OMeTAD,
4- tert .-butylpyridines, the acetonitrile solution of double trifluoromethanesulfonimide lithiums, FK102 salt and chlorobenzene.
8. battery according to claim 7, it is characterised in that：Spiro-OMeTAD, 4- tert .-butylpyridine, double trifluoros
The amount ratio of sulfonyl methane imine lithium, FK102 salt and chlorobenzene is 0.1g：9.6μL：13.6mg：21mg：1mL, acetonitrile and double trifluoros
The amount ratio of sulfonyl methane imine lithium is 1ml：170mg.
9. battery according to claim 4, it is characterised in that：The material of the electrode is gold or silver.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109411612A (en) * | 2018-10-19 | 2019-03-01 | 武汉大学 | Allowed under a kind of non-vacuum condition can sublimator material the method that film is prepared in substrate is transferred to from ontology |
| CN112159425A (en) * | 2020-09-08 | 2021-01-01 | 扬州大学 | High quality formamidino perovskite FAPBI3Colloidal quantum dot and preparation method thereof |
| CN112467032A (en) * | 2020-10-27 | 2021-03-09 | 南昌大学 | Method for preparing high-quality organic-inorganic perovskite film by using waste raw materials |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105470400A (en) * | 2015-11-19 | 2016-04-06 | 华北电力大学 | Perovskite film preparation method and application |
| CN105470391A (en) * | 2015-11-23 | 2016-04-06 | 中国科学院上海硅酸盐研究所 | Organic inorganic hybrid perovskite film and manufacturing method of perovskite solar cell |
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| WO2017031193A1 (en) * | 2015-08-20 | 2017-02-23 | The Hong Kong University Of Science And Technology | Organic-inorganic perovskite materials and optoelectronic devices fabricated by close space sublimation |
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| WO2017031193A1 (en) * | 2015-08-20 | 2017-02-23 | The Hong Kong University Of Science And Technology | Organic-inorganic perovskite materials and optoelectronic devices fabricated by close space sublimation |
| CN105470400A (en) * | 2015-11-19 | 2016-04-06 | 华北电力大学 | Perovskite film preparation method and application |
| CN105470391A (en) * | 2015-11-23 | 2016-04-06 | 中国科学院上海硅酸盐研究所 | Organic inorganic hybrid perovskite film and manufacturing method of perovskite solar cell |
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| CN109411612A (en) * | 2018-10-19 | 2019-03-01 | 武汉大学 | Allowed under a kind of non-vacuum condition can sublimator material the method that film is prepared in substrate is transferred to from ontology |
| CN109411612B (en) * | 2018-10-19 | 2021-01-19 | 武汉大学 | Method for preparing film by transferring sublimable material from body to substrate under non-vacuum condition |
| CN112159425A (en) * | 2020-09-08 | 2021-01-01 | 扬州大学 | High quality formamidino perovskite FAPBI3Colloidal quantum dot and preparation method thereof |
| CN112467032A (en) * | 2020-10-27 | 2021-03-09 | 南昌大学 | Method for preparing high-quality organic-inorganic perovskite film by using waste raw materials |
| CN112467032B (en) * | 2020-10-27 | 2022-12-06 | 南昌大学 | Method for preparing high-quality organic-inorganic perovskite film by using waste raw materials |
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| CN107994123B (en) | 2020-11-13 |
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