JP2008305560A - Manufacturing method of organic el display device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To reduce vapor deposition defects due to position shift in the case a plurality of non-common layers are vapor deposited using an identical mask on each pixel of an organic EL element. <P>SOLUTION: A carrier transport layer and a light-emitting layer of an organic EL element are formed continuously using the identical mask 20. In the vapor deposition process of the light-emitting layer, a radiation angle θ2 of point sources 31a, 31c on both sides is made wider to deposit than in the case of deposition of the carrier transport layer corresponding to a differential of displacement due to thermal expansion of the mask 20 and the substrate 10 occurring by deposition of the carrier transport layer. Since the outer fringe portion of the light-emitting layer wraps around the outer fringe of the carrier transport layer so as to surround it, occurrence of defects of the light-emitting layer is prevented. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a method for manufacturing an organic EL (electroluminescence) display device.

  The organic EL display device includes a plurality of organic EL elements, and each organic EL element constitutes a pixel. In each organic EL element, electrons and holes are respectively injected from the electron injection electrode and the hole injection electrode into the light emitting layer, and these carriers are recombined inside the light emitting layer near the interface between the light emitting layer and the carrier transport layer. Thereby, the organic molecule enters an excited state, and fluorescence or phosphorescence is generated when the organic molecule returns from the excited state to the ground state.

  In organic EL display devices, there are two types of driving methods, passive driving and active driving. Active driving is suitable for controlling a large area and high-definition display for each pixel with high accuracy. As a display device, an active drive method is considered to be mainstream. In an active drive organic EL display device, a plurality of organic EL elements are arranged in a matrix, and each pixel includes a thin film transistor (TFT) as a switching element.

  A full-color organic EL display device includes a pixel (R pixel) composed of an organic EL element that emits red light, a pixel (G pixel) composed of an organic EL element that emits green light, and a pixel (B) composed of an organic EL element that emits blue light. Pixel).

  Each organic EL element has a laminated structure in which at least a carrier transport layer, a light emitting layer, and an electron transport layer are sequentially formed between a hole injection electrode (anode) and an electron injection electrode (cathode).

  By the way, in recent years, products in which an organic EL display device is mounted on a mobile device have begun to appear, but the problem that power consumption is still too high remains. For this reason, in the organic EL display device, it is an important issue to improve the light extraction efficiency in the normal direction of the substrate surface as a means for reducing the power consumption without impairing the existing display quality.

  In response to these problems, active research and development will be made on a technology that applies an optical resonant structure that allows light emitted inside the organic EL device to interfere in the thickness direction of the device and efficiently extract the strengthened light to the outside. It has become.

  An organic EL element using this optical resonance structure has a mechanism in which a pair of electrodes consisting of an anode and a cathode is used as a reflection surface, and the light emitted from a plurality of layers sandwiched between the reflection surfaces is extracted outside. ing.

  In order to increase the light extraction efficiency of each of the R, G, and B pixels, it is preferable to set an optimum resonance condition for the emission wavelength of each pixel. Set for each color. For example, the light emitting layer and the carrier transport layer are preferably set to different film thicknesses for each of the R, G, and B pixels.

  In general, vacuum deposition is used to form an organic layer of an organic EL display device.

  The plurality of layers constituting the organic EL element formed on the substrate include a common layer formed of a common material with a common thickness for each of the R, G, and B pixels, and a different thickness or a different material for each pixel. And a non-common layer formed in (1). In the organic EL element having the above-described optical resonance structure, the light emitting layer and the carrier transport layer correspond to non-common layers.

  Usually, a vacuum vapor deposition apparatus is used to form an organic layer of an organic EL display device, and a non-common layer is selectively vapor-deposited by using a mask having a fine opening and separately applied.

  In the vacuum vapor deposition apparatus shown in FIG. 5, the mask 120 and the substrate 110 are arranged above the vapor deposition source 130 in the vacuum chamber with a distance L, and the mask 120 and the substrate 110 are arranged at a distance g. Has been. A deposition preventing plate 155 is provided in the vicinity of the vapor deposition source 130 so that the radiation angle θ of the material evaporated toward the substrate 110 can be arbitrarily controlled. Further, a mechanism is provided that allows the evaporation source 130 to move relative to the substrate 110 and the mask 120.

When a plurality of non-common layers are stacked on the same pixel using such an apparatus, a manufacturing method in which each layer is continuously deposited using the same mask is known from Patent Document 1 or the like. According to this manufacturing method, since the number of alignments can be reduced compared to the case of vapor deposition using a different mask for each layer, there is an advantage that a decrease in misalignment accuracy can be suppressed and tact can be shortened. .
JP 2003-317958 A

  However, the conventional method for manufacturing an organic EL display device has the following problems.

  Since the vapor deposition source used to evaporate the organic layer contained in the organic EL element is heated to a high temperature, the mask and the substrate disposed opposite thereto receive the radiant heat from the vapor deposition source and cause thermal deformation.

  For example, a thermally deformed mask is typically as shown in FIG. When the deposition source is arranged below the point A at the center of the substrate and the mask, an elliptical temperature distribution as shown by a broken line in FIG. 6 is formed, and the mask expands in the X direction and the Y direction. For this reason, the displacement before and after thermal expansion becomes the largest in the Y direction in the vicinity of the outer periphery including the point B of the mask. Although the displacement of the mask is described here, the substrate is also deformed with a similar tendency.

  Glass is used for the substrate support and metal is used for the vapor deposition mask. Since the coefficients of thermal expansion are different from each other, there is a difference in displacement between the substrate and the mask due to thermal deformation. For this reason, the alignment position between the substrate and the mask before vapor deposition is shifted in the vapor deposition process.

  Further, since the heat capacity of the substrate is sufficiently larger than that of the mask and the time constant of temperature change of the substrate is larger, the mask almost reaches the saturation temperature during the deposition period, but the substrate does not reach the saturation temperature. For this reason, in the process of depositing a plurality of non-common layers in order, the difference in temperature rise between the mask and the substrate during the deposition period tends to decrease. That is, as the deposition time elapses, the thermal displacement of the substrate becomes larger than the thermal displacement of the mask.

  Further, in many cases, the temperature of the vapor deposition source varies depending on the vapor deposition material, so that the thermal displacement of the mask and the substrate also varies depending on the vapor deposition material.

  An alignment state between the substrate and the mask when the carrier transport layer and the light emitting layer are successively deposited as the non-common layer will be described in detail using the apparatus of FIG.

  In the vapor deposition apparatus of FIG. 5, L = 200 mm, g = 0.01 mm, θ = 20 °, and Table 1 shows the results of analytically determining the temperature change of the substrate and mask at point B at that time. Table 1 also shows the thermal displacement in the Y direction at point B when the width of the substrate and the mask is 400 mm × 500 mm.

ここに示した解析では、熱膨張率はそれぞれ基板で約４ｐｐｍ、マスクで約１．５ｐｐｍとし、熱変位δの算出には下式を用いた。下式では熱膨張率をα、変位に寄与する部材の長さをＳ、上昇温度をΔＴとした。

In the analysis shown here, the coefficients of thermal expansion were about 4 ppm for the substrate and about 1.5 ppm for the mask, respectively, and the following equation was used to calculate the thermal displacement δ. In the following equation, the coefficient of thermal expansion is α, the length of the member contributing to the displacement is S, and the temperature rise is ΔT.

[Equation 1]
δ = α × S × ΔT
First, the mask and the substrate are aligned before vapor deposition. In this step, since the substrate and the mask installed in the vacuum chamber are not heated, their temperatures are equal to 23 ° C.

  Next, in the process of vapor-depositing the carrier transport layer with the vapor deposition source heated to 350 ° C., the temperature of the substrate and the mask increases with each other, and thermal deformation occurs accordingly. The rising temperature (ΔTm) of the mask is about 37 ° C., and the rising temperature (ΔTs) of the substrate is about 16 ° C. As a result, the thermal displacement near the outer periphery of the mask (point B in FIG. 6 (location 180 mm from point A)) is about 10 μm, and the thermal displacement near the outer periphery of the substrate (point B in FIG. 6) is about 12 μm. Is about 2 μm.

  In the process of vapor-depositing the light-emitting layer with the vapor deposition source continuously heated to 400 ° C., the substrate and the mask are further subjected to thermal radiation from the vapor deposition source to cause thermal displacement. The rising temperature of the mask is about 10 ° C., and the rising temperature of the substrate is about 10 ° C. As a result, the thermal displacement near the outer periphery of the mask (point B in FIG. 6) is further about 2 μm, the thermal displacement near the outer periphery of the substrate (point B in FIG. 6) is further about 7 μm, and the difference further increases by about 5 μm. The difference is 7 μm in total.

  As can be seen from the above, when the same mask is used, the positional displacement of the substrate with respect to the mask occurs in the order of several μm due to thermal deformation in the vapor deposition process, and the displacement changes with time.

  When such misalignment occurs, a portion where the carrier transport layer and the electron transport layer are in contact with each other in the effective light emitting region is formed, causing current leakage defects. In addition, depending on the material of the carrier transport layer, a color different from a desired emission color may be emitted at a defective portion and mixed in a pixel in some cases. In particular, the problems associated with such misalignment become conspicuous when the substrate size is increased and the pixel size is reduced as the display becomes higher in definition. Therefore, both higher production efficiency and higher quality display devices are achieved. It is thought that it becomes a big obstacle when trying to.

  For example, the positional deviation accuracy required in a high-definition organic EL display device mounted on a mobile device or the like is in the range of ± 3 μm to ± 10 μm. In addition to thermal expansion, misalignment factors include alignment equipment accuracy, mask processing accuracy, substrate processing accuracy, and the like, and misalignment that occurs in the actual manufacturing process is determined by these multiple factors. For this reason, when a positional shift with time due to thermal expansion occurs on the order of several μm, it becomes difficult to accurately form a plurality of non-common layers on the same pixel.

  The present invention improves the yield by reducing the misalignment when depositing multiple non-common layers using the same mask, and also ensures the display quality by suppressing the reduction of the effective light emitting area even in high definition display. An object of the present invention is to provide a method for manufacturing an organic EL display device.

  The manufacturing method of the organic EL display device of the present invention includes a plurality of organic EL elements constituting pixels of different colors, and each of the plurality of organic EL elements includes a pixel separation film formed on an electrode of a substrate, and carrier transport In a method for manufacturing an organic EL display device including a layer and a light-emitting layer, a first step of depositing a carrier transport layer using a mask facing the substrate, and an upper surface of the carrier transport layer using the same mask as in the first step. A second step of depositing the light emitting layer on the substrate, and the radiation angle of the vapor deposition source of the light emitting layer in the second step is set in accordance with the positional shift accompanying the thermal expansion of the mask and the substrate generated in the first step. It is larger than the radiation angle of the deposition source of the carrier transport layer in the first step.

  The yield can be improved by improving the alignment accuracy when different layers are successively deposited using the same mask and reducing the number of pixel defects. At the same time, since it is possible to suppress a decrease in the effective light emitting area, it is easy to ensure display quality even in high definition display.

  As a result, a high quality organic EL display device can be stably produced.

  The best mode for carrying out the present invention will be described with reference to the drawings.

  FIG. 1 is a diagram illustrating a method for manufacturing an organic EL display device according to an embodiment. FIG. 2 shows a pixel of the manufactured organic EL element, which includes an anode (electrode) 11, a pixel separation film 12, a carrier transport layer 13, and a light emitting layer 14 formed on the substrate 10.

  FIG. 1A shows a vapor deposition apparatus for forming a carrier transport layer 13 on a substrate 10 of an organic EL element through a mask 20, and a plurality of vapor deposition apparatuses arranged at intervals Y in the Y direction in a vacuum chamber. It has point sources (vapor deposition sources) 30a-30c. The mask 20 and the substrate 10 are disposed above the point sources 30a to 30c with a distance L, and both face each other with a distance g. In the vicinity of the point sources 30 a to 30 c, adhesion preventing plates 50 a to 50 f are provided to limit the radiation angle θ <b> 1 of the material that evaporates toward the substrate 10. Furthermore, a mechanism is provided so that the point sources 30 a to 30 c can move in the X direction relative to the substrate 10 and the mask 20.

  The vapor deposition apparatus shown in FIGS. 1A and 1B includes three point sources arranged in parallel in the Y direction. The number of point sources is determined by the size of the substrate. Further, a vapor deposition source other than the point source may be used. For example, a general linear source or a surface evaporation source may be used.

  (A) of FIG. 1 shows the YZ cross section of the vapor deposition apparatus of the carrier transport layer 13. As shown in FIG. The distance L between each point source 30a, 30b, 30c and the board | substrate 10 is the same, and the radiation angle (theta) 1 to the Y direction restrict | limited by the adhesion prevention plates 50a-50f is also preparing. Each point source 30a, 30b, 30c is arrange | positioned at equal intervals.

  FIG. 1B shows a YZ cross section of the vapor deposition apparatus when the light emitting layer 14 is vapor deposited. The distance L2 between the point sources (deposition sources) 31a and 31c and the substrate 10 is shorter than the distance L1 between the point source (deposition source) 31b and the substrate 10, and the radiation angle is set to be different for each point source. It is.

  The central point source 31b has a symmetrical radiation angle θ1 by the deposition plates 51c and 51d, whereas the radiation angles θ2 and θ3 by the deposition plates 51a51b, 51e, and 51f of the point sources 31a and 31c on both sides are left and right. Asymmetric. The radiation angle θ3 directed inward is smaller than the radiation angle θ2 directed outward of the substrate. The point sources 31a to 31c are arranged at equal intervals with an interval Y1.

  The interval Y1 in FIG. 1B may be the same as the interval Y in FIG. 1A, but is actually determined by how the radiation angles θ2 and θ3 are set.

  The point sources 31a and 31c mainly responsible for vapor deposition on the outer periphery of the substrate are set in this way because the angle of incidence on the substrate 10 including the point B is wider than that during the vapor deposition of the carrier transport layer ( This is for maintaining the film thickness uniformity within the pixel.

  Next, processes from mask alignment to vapor deposition of the light emitting layer will be described.

  For convenience of explanation, explanation regarding thermal displacement and film deposition deviation is limited to the Y direction. Although the mask and the substrate expand in the X and Y directions due to radiant heat, in the vapor deposition apparatus having the structure shown in FIG. 1, a temperature gradient is formed in the X direction, whereas the Y direction is approximately equal to the substrate center temperature. It will be the same. For this reason, the displacement difference between the mask 20 and the substrate 10 due to thermal expansion becomes significant in the Y direction.

  First, the mask 20 and the substrate 10 are aligned in a vacuum chamber controlled at 23 ° C. After the alignment, the substrate 10 and the mask 20 are in a state of facing each other with a constant gap g.

  Next, in the apparatus shown in FIG. 1A, the carrier transport layer 13 is deposited for a predetermined time (first step). Next, the light emitting layer 14 is continuously deposited for a predetermined time in the apparatus of FIG. 1B while maintaining the state of the mask 20 and the substrate 10 used for the deposition of the carrier transport layer 13 (second step). At the time of vapor deposition, the point source group reciprocates in the X direction to perform vapor deposition, thereby forming a uniform film on the entire surface of the substrate.

  FIG. 2 shows a cross section of the pixel at points A and B on the substrate formed through such a vapor deposition process.

  As shown in FIG. 2A, since the influence of thermal displacement in the vapor deposition process can be ignored at point A in the center of the substrate, the substrate 10 is displaced with respect to the mask 20 during the successive vapor deposition of two layers. There is no. Accordingly, there is almost no displacement between the carrier transport layer 13 and the light emitting layer 14. For this reason, a vapor deposition defect cannot occur in the effective light emitting region corresponding to the anode 11 surrounded by the element isolation film 12.

  On the other hand, as shown in FIG. 2B, at the point B on the outer periphery of the substrate, the temperature of the mask 20 and the substrate 10 rises in the continuous deposition process, causing thermal expansion. For this reason, when the light emitting layer 14 is vapor-deposited, a positional shift of the order of several μm occurs between the mask 20 and the substrate 10, and a part of the effective light emitting region overlaps with the shadowed area of the mask 20.

  However, since the direction of thermal deformation of the mask 20 and the substrate 10 is reproducible, it is possible to anticipate the direction in advance. Therefore, by setting the radiation angle θ2 of the point sources 31a and 31c to the substrate 10 to be larger than the radiation angle θ1, wrap-around deposition is performed between the substrate 10 and the mask 20 only in the region near the point B.

  That is, as shown in FIG. 1B, when the substrate 10 is shifted in the + Y direction with respect to the mask 20, the radiation angle θ <b> 2 in the vapor deposition of the light emitting layer 14 is set in advance to the radiation angle θ <b> 1 in the carrier transport layer 13. Set large and wide. As a result, the light emitting layer 14 can be deposited also in the region of the width W2 including the region that becomes the shadow of the mask 20. Thus, since the edge part of the light emitting layer 14 can be formed on the element isolation film 12, a vapor deposition defect does not generate | occur | produce in an effective light emission area | region.

  3A and 3B are plan views showing the pixels at the points A and B shown in FIG. As can be seen from FIG. 3B showing the point B, the boundary of the light emitting layer 14 is deposited so as to surround the boundary of the carrier transport layer 13 formed in the non-light emitting region between the pixels.

  According to the present embodiment, it is possible to improve the yield by improving the alignment accuracy when different layers are successively deposited using the same mask and reducing the number of pixel defects. At the same time, since the reduction of the effective light emitting area can be suppressed, it is easy to ensure display quality even in high definition display. Therefore, it becomes possible to stably produce an organic EL display device using an optical resonance structure in which a plurality of non-common layers are provided in the same pixel.

  In this embodiment, the positional relationship between the substrate and the mask is such that the substrate is relatively on the upper side and the mask is on the lower side. However, in the vacuum deposition apparatus, the substrate is held below the mask. Sometimes it is done. In linear source deposition or the like, the substrate and the mask may be held vertically.

  An RGB color organic EL display device provided with an organic EL element having an optical resonance structure for each pixel was produced by the following method.

  An organic EL display device having a resolution equivalent to 200 ppi and an effective light emission area ratio of 50% was formed on a substrate having a size of 500 mm (X direction) × 400 mm (Y direction). The subpixel pitch is 60 μm (X direction) × 120 μm (Y direction), the interval between adjacent effective light emitting regions is 15 μm, and an element isolation film is disposed there. Further, the allowable positional deviation accuracy of the deposited film was set to ± 7 μm.

  First, a drive circuit including TFTs made of low-temperature polysilicon is formed on a glass substrate as a support, and a layer made of a silicon nitride film SiNx and a silicon oxide film SiOx is formed on the surface of the drive circuit including TFTs to protect them. A membrane was placed. Further, a planarizing film made of an acrylic resin was laminated thereon to produce a substrate.

On the substrate, an aluminum alloy (AlNiNd) and a transparent conductive film (IZO) were continuously formed by sputtering as an anode, and then patterned into a predetermined shape through a photolithography process and a wet etching process. The anode and the drain electrode of the TFT were electrically connected through a contact carrier. Next, an element isolation film was formed using a photosensitive polyimide resin. A gentle slope was provided on the side surface of the element isolation film. After forming the device isolation film, UV / ozone cleaning was performed to sufficiently remove the resin slightly remaining on the anode surface.

  Next, a plurality of organic compounds were sequentially deposited by the vapor deposition apparatus shown in FIG.

  First, in a vacuum chamber controlled at 23 ° C., the mask 20 having an opening corresponding to the R pixel and the substrate 10 are aligned, and the distance (interval) g between the substrate 10 and the mask 20 in a state where the alignment is completed. Was 10 μm, and the state of being separated from each other was stably maintained.

  Next, the carrier transport layer was deposited for 2 minutes while moving the point sources 30a to 30c heated to 350 ° C. in the X direction. The distance L between the point sources 30a to 30c and the mask 20 was 200 mm, and the radiation angle θ1 was 20 °. The interval Y between the three point sources was 130 mm.

  In this process, the temperature of the substrate 10 and the mask 20 rose to each other, the thermal displacement of the mask 20 in the vicinity of the outer periphery of the substrate including the point B was about 10 μm, and the thermal displacement of the substrate 10 was about 12 μm. As a result, the substrate 10 expanded by about 2 μm from the mask 20 due to the thermal expansion, but this was within the allowable range of the positional deviation accuracy, and no vapor deposition defect occurred in the effective light emitting region.

  Subsequently, while maintaining the positional relationship between the mask 20 and the substrate 10, as shown in FIG. 1B, while moving the point sources 31a to 31c heated to 400 ° C. in the X direction, the R pixel An emissive layer was deposited for 2 minutes. The distance L1 between the point source 31b and the mask 20 was 200 mm, the distance L2 between the point sources 31a and 31c and the mask 20 was 150 mm, and the distance Y1 between the point sources was 120 mm. At this time, the radiation angle θ3 was 20 °, and θ2 was 25 °.

  Even at this stage, since the substrate 10 and the mask 20 receive heat radiation from the vapor deposition source, the thermal displacement of the mask 20 at the point B is about 2 μm, and the thermal displacement of the substrate 10 corresponding to the point B is about 7 μm. As a result, the substrate 10 further expanded by about 5 μm from the mask 20.

  That is, as shown in FIG. 2B, the pixel at the point B has a displacement W1 due to thermal displacement of about 5 μm with respect to the opening of the mask 20. However, at point B, as described above, the radiation angle θ2 to the substrate 10 is increased in correspondence with the direction in which the displacement occurs due to thermal displacement, and the light emitting layer is interposed between the substrate 10 and the mask 20 by a width W2 of about 5 μm. Let

  As a result, even in the pixels in the vicinity of the outer periphery of the substrate including the point B, the end portions of the carrier transport layer and the light emitting layer were on the element isolation film, and no vapor deposition defect occurred in the effective light emitting region.

  Next, the carrier transport layer and the light emitting layer of the G pixel and the B pixel were vapor-deposited to a predetermined thickness in the same procedure as the R pixel. As a result, no vapor deposition defect occurred in the effective light emission region even in the G pixel and the B pixel.

  Next, a common electron transport layer was formed on the entire display region. Next, as a cathode, a thin film of silver alloy (AgNdCu) was formed by vapor deposition, and a transparent conductive film (IZO) was continuously laminated thereon by sputtering. Thereafter, a silicon nitride oxide film was formed as a protective layer by a CVD method.

According to this example, pixel defects due to film deposition deviation could be reduced even when different layers were successively deposited using the same mask. Moreover, since the reduction of the effective light emitting area could be suppressed, an aperture ratio of 50% could be realized even in a high definition display of 200 ppi. As a result, it was possible to stably produce an organic EL display device having an optical resonance structure with high light extraction efficiency, and to improve the yield.
(Comparative example)
An RGB color organic EL display device in which an organic EL element having an optical resonance structure is provided for each pixel under the same conditions as in the above-described example was fabricated using the conventional vapor deposition apparatus of FIG.

  As shown in FIG. 4, the vapor deposition device for the light emitting layer 114 is the same as the carrier transport layer 113 on the anode 111, and the radiation angle θ of the deposited material to the substrate 110 in the substrate plane of the carrier transport layer 113 and the light emitting layer 114. Made the same. Then, the carrier transport layer 113 and the light emitting layer 114 were successively deposited using the same mask 120. In the process of depositing the light emitting layer 114, the substrate 110 and the mask 120 receive thermal radiation from the deposition source as in the above embodiment, so that the thermal displacement of the mask at the point B is about 2 μm and the substrate corresponding to the point B has a thermal displacement. The thermal displacement was about 7 μm. Thus, the substrate 110 was displaced by about 5 μm larger than the mask 120 due to the influence of thermal expansion. FIG. 4 shows a cross section of the pixel at points A and B formed through the vapor deposition process.

  The pixel at the point A shown in FIG. 4A does not have a deposition error and no defect occurs as in the above embodiment, but a part of the effective light emitting region P is shown at the point B shown in FIG. 4B. Overlapped with the shadow of the mask 120, and the vapor deposition defect of the light emitting layer 114 occurred only in the region of the width W3.

It is a figure explaining one Embodiment. It is a figure explaining the shift | offset | difference of the pixel by the thermal deformation of a board | substrate and a mask in a cross section. It is a figure which shows the shift | offset | difference of the pixel of FIG. 2 with a plane. It is a figure explaining the shift | offset | difference of the pixel by a comparative example. It is a figure which shows the vapor deposition apparatus by a prior art example. It is a figure explaining the thermal deformation of a mask.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Board | substrate 11 Anode 12 Element separation film 13 Carrier transport layer 14 Light emitting layer 20 Mask 30a-30c, 31a-31c Point source 50a-50f, 51a-51f Adhesion board

Claims (2)

Manufacture of an organic EL display device comprising a plurality of organic EL elements constituting pixels of different colors, each of the plurality of organic EL elements including a pixel separation film, a carrier transport layer, and a light emitting layer formed on an electrode of a substrate. In the method
A first step of depositing a carrier transport layer using a mask facing the substrate;
A second step of depositing a light emitting layer on the carrier transport layer using the same mask as in the first step,
The radiation angle of the vapor deposition source of the light emitting layer in the second step is set to be larger than the radiation angle of the vapor deposition source of the carrier transport layer in the first step according to the positional deviation accompanying the thermal expansion of the mask and substrate generated in the first step. A method of manufacturing an organic EL display device, wherein the size is increased.   The method of manufacturing an organic EL display device according to claim 1, wherein in the second step, the light emitting layer is wrapped around the carrier transport layer.

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