TWI653353B - Vacuum vapor deposition device, method for producing vapor deposition film, and method for manufacturing organic electronic device - Google Patents

Abstract

Provided is a vacuum evaporation apparatus capable of preventing thermal deformation during vapor deposition and forming a film in a desired pattern with high accuracy.

A vacuum evaporation device is provided in an evaporation chamber (1) with an evaporation source (2) for vapor deposition of a substrate through a mask, and during evaporation, the evaporation source (2) is opposed to the substrate. A moving evaporation source moving mechanism or a substrate moving mechanism that moves the substrate relative to the evaporation source during vapor deposition, and the evaporation source moving mechanism or the substrate moving mechanism is configured to start vaporization to the substrate. Prior to plating, the mask is heated in advance using the evaporation source (2).

Description

Vacuum evaporation device, method for producing vapor-deposited film, and method for producing organic electronic device

The present invention relates to a method for manufacturing a vacuum vapor deposition device, a vapor deposition film, and an organic electronic device.

In a vapor deposition device that deposits a film-forming material evaporated from an evaporation source on a substrate with a mask formed with a predetermined mask pattern formed thereon, the film is sometimes masked during the vapor deposition (forming The film) is deformed by receiving heat from the evaporation source. The thermal deformation of this mask causes the position of the mask to deviate from the substrate, and the pattern of the thin film formed on the substrate deviates from the desired position. In particular, in the manufacture of organic electronic devices such as display panels such as mobile phones and televisions, since a mask having a high-definition pattern is used, the influence due to thermal deformation is large.

Therefore, as disclosed in, for example, Patent Document 1, although a mask made of an invar material which is a low thermal expansion material has been proposed to suppress thermal deformation, it is still difficult to make the linear expansion coefficient be 0, in which case thermal deformation may still be a problem.

[Prior technical literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2004-323888

The present invention has been made by the creators in view of the above-mentioned circumstances, and an object thereof is to provide a vacuum evaporation apparatus capable of accurately forming a film in a desired pattern while suppressing thermal deformation during vapor deposition of a mask.

The gist of the present invention will be described with reference to the drawings.

A first aspect of the present invention relates to a vacuum evaporation device. The evaporation chamber 1 is provided with an evaporation source 2 that vapor-deposits a substrate through a mask, and the evaporation source 2 is formed during vapor deposition. The evaporation source moving mechanism that moves with respect to the substrate or the substrate moving mechanism that moves the substrate with respect to the evaporation source during vapor deposition, wherein the evaporation source moving mechanism or the substrate moving mechanism is configured to start Before the substrate is vapor-deposited, the mask is heated in advance using the evaporation source 2.

In addition, in a vacuum vapor deposition device, the preheating before vapor deposition for stabilizing the film forming speed of the film forming material evaporated from the evaporation source 2 is performed by using the heat emitted from the evaporation source 2. The aforementioned mask is heated beforehand.

In addition, in a vacuum evaporation apparatus, the evaporation source is 2 A masker 7 is provided, and is configured to change the relative positional relationship between the evaporation source and the mask while the masker 7 is closed, and perform pre-heating of the mask.

In addition, in a vacuum vapor deposition apparatus, the evaporation source moving mechanism is configured to align the position of a substrate to be initially vapor-deposited with a mask during the continuous vapor deposition in parallel with the pre-heating of the mask. And proceed.

In addition, in a vacuum vapor deposition apparatus, a plurality of vapor deposition regions 3 and 4 for vapor deposition of the substrate in the vapor deposition chamber 1 are juxtaposed in a direction orthogonal to the moving direction of the evaporation source. For each of the plurality of vapor deposition regions 3 and 4, a retreat region is provided outside the vapor deposition region to retreat the evaporation source, and the evaporation source moving mechanism is configured to move the evaporation source 2 to and from the vapor deposition. The juxtaposed directions of the regions 3 and 4 are moved in the same direction from one of the vapor deposition regions to the other vapor deposition region, and the evaporation source moving mechanism is configured to be disposed in the plurality of vapor deposition regions 3 respectively. When the masks of 4 and 4 are heated in advance, the masks arranged in one of the evaporation regions are heated, and then the evaporation source 2 is not moved to the evaporation regions 3 and 4 and moved to the evaporation region. Set the direction and move to another vapor deposition area.

A second aspect of the present invention relates to a method for producing a vapor-deposited film, which includes a program for setting a substrate in a vapor deposition chamber, a program for heating a film-forming material stored in an evaporation source to stabilize a film-forming speed, and A process of attaching vapor of the vapor deposition material to the substrate through a mask, wherein the evaporation source and the substrate are The relative positional relationship changes, and the mask is heated by the heat of the evaporation source.

A third aspect of the present invention relates to a method for manufacturing an organic electronic device including a plurality of elements having an organic layer sandwiching a pair of electrodes on a substrate, and the manufacturing method includes forming a plurality of elements. A procedure for installing a substrate with two electrodes in a vapor deposition chamber, a procedure for aligning a mask with a plurality of openings on the substrate, a procedure for heating a film forming material stored in an evaporation source to stabilize a film forming speed, And a process of forming vapor of the film-forming material on the substrate through the mask to form at least a part of the organic layer, wherein the evaporation source and the substrate are opposed to each other during the process of stabilizing the film-forming speed. The positional relationship of φ is changed, and the mask is heated by the heat of the evaporation source.

According to the present invention, it is possible to suppress thermal deformation during vapor deposition of a mask and to form a film with a desired pattern with high accuracy.

1‧‧‧Evaporation Room

2‧‧‧ evaporation source

3, 4‧‧‧ evaporation area

7‧‧‧Mask

[FIG. 1] A schematic explanatory perspective view of the present embodiment.

[FIG. 2] A schematic explanatory plan view of the present embodiment.

[FIG. 3] A schematic explanatory plan view of the present embodiment.

4] A schematic explanatory plan view of the present embodiment.

[Fig. 5] (a) is a perspective view of an organic EL display device manufactured by using a vacuum evaporation device according to the present invention, and (b) is a sectional view taken along line A-B of (a). Face view.

An embodiment of the vacuum evaporation apparatus according to the present invention will be specifically described based on the drawings.

A vacuum evaporation apparatus according to an embodiment of the present invention is provided in an evaporation chamber, and includes an evaporation source (material storage portion) for vapor-depositing a substrate through a mask, and the evaporation source is opposed to the evaporation source during vapor deposition. The evaporation source moving mechanism that moves the substrate. This evaporation source moving mechanism has a function of changing the relative positional relationship between the evaporation source and the substrate, and more specifically, the relative positional relationship between the evaporation source and the substrate in a plane direction parallel to the film-forming surface of the substrate. In addition, the evaporation source moving mechanism is configured to move the evaporation source with respect to the mask before the evaporation of the substrate is maintained while maintaining the vacuum state of the evaporation chamber, and use the heat emitted from the evaporation source to The mask is heated beforehand. In this embodiment, the evaporation source moving mechanism is used to move the evaporation source to change the relative positional relationship between the evaporation source and the substrate. However, a substrate moving mechanism may be provided in the evaporation chamber, and the evaporation source and the substrate may be moved by moving the substrate. The relative positional relationship between the evaporation source and the substrate can also be changed by moving both the substrate and the evaporation source. Therefore, the so-called evaporation source moving mechanism and substrate moving mechanism are both referred to as a mechanism for changing the relative position relationship between the evaporation source and the substrate.

An embodiment of a vacuum evaporation apparatus according to the present invention is shown in FIGS. 1 and 2. Figure 1 shows the evaporation chamber in order to see the inside of the vacuum evaporation device. A perspective view with a part of the wall of FIG. 1 removed, and FIG. 2 is a plan view seen from the upper surface side of the evaporation chamber 1. In the vapor deposition chamber 1, a plurality of vapor deposition regions 3, 4 for vapor deposition of a substrate are juxtaposed in a direction orthogonal to the film forming moving direction (moving direction of the vapor deposition region). In addition, each of the vapor deposition regions 3 and 4 is provided with a retreat region for retreating the evaporation source 2 outside the vapor deposition regions 3 and 4.

In addition, in each of the vapor deposition regions 3 and 4, a mask stage (not shown) for holding a mask and a substrate is provided. The substrates carried in from the carrying-out inlets 8 and 9 respectively corresponding to the vapor deposition areas 3 and 4 are aligned with the masks through alignment mechanisms provided in the vapor deposition areas 3 and 4, respectively. In a state where they are overlapped and fixed with the mask, they are respectively installed and held on a mask table.

The vapor deposition region refers to a region where the film-forming material evaporated from the evaporation source 2 is attached to the substrate.

In this embodiment, in order to stabilize the film-forming speed of the vapor deposition film formed by transmitting the vapor emitted from the evaporation source 2, the evaporation source moving mechanism is configured to use in the preliminary heating before the vapor deposition starts. The heat emitted from the evaporation source 2 is used to heat the mask in advance. Specifically, before vapor deposition is started, any one of the long-side direction and the width-direction of the substrate is used as the film-forming moving direction, and the evaporation source 2 is moved back and forth in the film-forming moving direction within the evaporation regions 3 and 4. Instead, perform a thermal test run. This movement does not need to be a back-and-forth motion, or a circular motion. In addition, as long as the variation in the film formation speed is suppressed compared to the case where no preheating is performed, this preliminary heating is for the purpose of stabilizing the film formation speed. Preheating The change will fall within a predetermined predetermined range. Even so, it is not necessary to verify each film formation every time whether it falls within a predetermined range, and the preliminary heating time can be determined by preliminary experiments and the like.

This preheating is performed in order to stabilize the melting state of the film-forming material and stabilize the degassing and film-forming speed of the film-forming material stored in the evaporation source 2. For example, the temperature of the evaporation source 2 is raised to that during film formation. The heating is performed at the same temperature as the heating temperature for several minutes. In addition, the evaporation source 2 of this embodiment is constituted by three line sources as shown in FIG. 2.

In addition, while the preheating of the evaporation source 2 is being performed, the position of the substrate and the mask to be initially vapor-deposited may also be aligned in parallel.

That is, it is preferable to perform the pre-heating of the mask during the vapor deposition preparation period such as the alignment of the substrate and the mask and the pre-heating of the evaporation source 2.

To further shorten the time required until the start of film formation, it is preferable to set the pre-heating temperature of the evaporation source 2 and the moving speed of the evaporation source 2 through the evaporation source moving mechanism so that the The point in time ends the pre-heating of the mask. This makes it possible to reduce the waiting time for pre-heating of the mask, and to perform pre-heating of the mask during the vapor deposition preparation period, and to prevent the mask from being thermally deformed during vapor deposition due to the heat emitted from the evaporation source 2 . In addition, since the heat source for pre-heating is the evaporation source 2, there is no need to prepare another heat source, and the heat generated during the preheating of the evaporation source 2 is used, so the preheating can be performed efficiently.

In addition, in the prior art, the preheating of the evaporation source is performed by arranging the evaporation source in a retreat area (the area where the evaporation material does not adhere to the substrate), so the preheating of the evaporation source is not helpful for the mask. Warm up.

As shown in FIG. 1, a mask 7 is preferably provided in the evaporation source 2, and the mask 7 is moved back and forth with respect to the mask in a state in which the mask 7 is closed to perform pre-heating of the mask. Specifically, the shutter 7 is slidably opened and closed at a position above the evaporation source 2. In addition, when the mask 7 is provided, the mask 7 is still heated by the evaporation source 2, and the mask 7 is heated through the heated mask 7. As represented by this example, a configuration in which the evaporation source is heated while changing the relative position of the evaporation source and the substrate in a state where the shutter of the evaporation source is closed is a suitable embodiment of the present invention. With such a configuration, the mask can be efficiently heated in advance in a state where an evaporation source is directly under the substrate, and at the same time, the film can be prevented from being attached to the substrate during the preliminary heating stage. In addition, the shield can be used to shield the vapor emitted from the evaporation source so as not to adhere to the substrate, and it is not necessary to provide the shield.

In addition, in this embodiment, the evaporation source moving mechanism is configured so that the evaporation source 2 can be moved in the same direction as the juxtaposed directions of the evaporation regions 3 and 4 (moving direction of the evaporation regions), and One of the vapor deposition regions 3 moves to the other vapor deposition region 4.

Specifically, in the present embodiment, a guide rail 10 extending in the moving direction of the vapor deposition area is provided on the bottom surface of the vapor deposition chamber 1, and a frame-shaped vapor deposition area moving slider capable of sliding back and forth relative to the guide rail 10 is provided. 6. In addition, a guide rail 11 extending in the film-forming moving direction is provided on the upper surface of the vapor-deposition-region-moving slider 6, and a film-forming moving slider 5 that can slide back and forth with respect to the guide rail 11 is provided. The film-forming-moving slider 5 is provided with an evaporation source 2 and a mask 7. In addition, on the bottom of the film-forming moving slider 5 The surface is connected to the arm member structure 12 for moving the film-forming movement slider 5. In addition, a control device that drives the arm member 12 to move the film-forming moving slider 5 (evaporation source 2) in the film-forming moving direction or the vapor-depositing area moving direction is provided outside the vapor deposition chamber 1 to constitute evaporation. Source mobile agency.

Therefore, one evaporation source 2 can be moved back and forth in the vapor deposition moving direction in one of the vapor deposition areas for pre-heating or film formation, and then can be moved in the vapor deposition area moving direction and in the other vapor deposition area. 4 Similarly, pre-heating or film formation is performed.

In addition, in this embodiment, the evaporation source moving mechanism is configured to prevent the evaporation source 2 from retreating to the retreat area when the masks respectively disposed in the plurality of evaporation regions 3 and 4 are heated in advance. Next, it moves to the juxtaposed direction of the said vapor deposition area 3,4, and moves from one vapor deposition area 3 to the other vapor deposition area 4.

In FIG. 3, the trajectory of the vapor deposition source 2 after the substrate has been vapor-deposited is shown in thick lines. When forming a film on a substrate provided in one of the vapor deposition regions 3, the evaporation source 2 is caused to pass through the vapor deposition region 3 from one of the two retreat regions provided between the vapor deposition regions 3. The way to another retreat area is moved back and forth in the direction in which the guide rail 10 extends a predetermined number of times. In the case where a film is formed on a substrate provided in the vapor deposition region 3 and a substrate provided in another vapor deposition region 4 is formed, the evaporation source 2 located in a retreat area outside the vapor deposition region 3 is moved. Move in the vapor deposition area until it reaches the retreat area outside the vapor deposition area 4. Then, the evaporation source 2 is repeatedly passed so that one of the two retreat areas provided between the vapor deposition areas 4 passes through the vapor deposition area 4 to the other retreat area. The pattern of the field is reciprocated a predetermined number of times in the direction in which the guide rail 10 extends. In this manner, the substrates provided in the vapor deposition regions 3 and 4 can be formed into films, respectively.

On the other hand, the trajectory of the vapor deposition source 2 when the mask is heated in advance before the vapor deposition is started is shown by a thick line in FIG. 4. When the mask provided in one of the vapor deposition areas 3 is heated in advance, as shown in FIG. 4, the evaporation source 2 is moved back and forth along the guide rail 11 in the vapor deposition area 3 a predetermined number of times to form a film. Direction of movement. After that, when a mask provided in another vapor deposition area is heated in advance, the vapor deposition source 2 is not moved to the evacuation area outside the vapor deposition area 3, and is applied from the end of the vapor deposition area 3. It moves in the moving direction of the vapor deposition region until it reaches the corresponding end portion of the other vapor deposition region 4. Then, the evaporation source 2 is repeatedly heated in the vapor deposition region 4 a predetermined number of times to and from the film formation moving direction, and the mask provided in the vapor deposition region 4 is heated in advance. In this way, the mask can be heated in advance until the masks provided in the vapor deposition regions 3 and 4 are thermally saturated.

When performing pre-heating of the mask, unlike the case of vapor deposition, it is made not to move the evaporation source 2 to the retreat area, so that the pre-heating of the mask can be performed more efficiently.

As described above, in the present embodiment, when vapor deposition is performed, the masks in each vapor deposition area are heated in advance before vapor deposition is started, and after heat saturation, the masks disposed in each vapor deposition area 3 and 4 are sequentially heated. The substrate is continuously vapor-deposited. The film formation in this way suppresses thermal deformation of the mask during vapor deposition, prevents the pattern of the thin film formed on the substrate during vapor deposition from changing, and enables stable and highly accurate film formation.

The interior of the vapor deposition chamber 1 is maintained in a vacuum state, so that each of the masks is heated in advance before the vapor deposition is started, so that the mask can be maintained in a thermally saturated state. Therefore, it is possible to perform stable and high-precision film formation by continuously vaporizing a plurality of substrates.

The present invention is not limited to the embodiment and the like, and the specific configuration of each constituent element can be appropriately designed.

Next, an example of manufacturing an organic EL display device as an example of an organic electronic device using the vacuum evaporation device according to the present invention will be described.

First, an organic EL display device to be manufactured will be described. FIG. 5 (a) is an overall view of the organic EL display device 40, and FIG. 5 (b) is a cross-sectional structure of one pixel.

As shown in FIG. 5 (a), a plurality of pixels 42 including a plurality of light emitting elements are arranged in a matrix in a display area 41 of the display device 40. Each light-emitting element has a structure including an organic layer sandwiched between a pair of electrodes, and details will be described later. The term “pixel” used herein refers to the smallest unit that can display a desired color in the display area 41. In the case of the display device according to the present embodiment, the pixels 42 are configured by a combination of the first light-emitting element 42R, the second light-emitting element 42G, and the third light-emitting element 42B that display mutually different light emission. The pixel 42 is mostly composed of a combination of a red light-emitting element, a green light-emitting element, and a blue light-emitting element. However, a combination of a yellow light-emitting element, a cyan light-emitting element, and a white light-emitting element is also possible. Limiter.

Fig. 5 (b) is a schematic partial cross-sectional view taken along the line A-B in Fig. 5 (a). The pixel 42 is provided on the substrate 43 and includes a first electrode (a male Electrode) 44, an organic EL element including a hole transport layer 45, any one of light emitting layers 46R, 46G, and 46B, an electron transport layer 47, and a second electrode (cathode) 48. Among these, the hole transport layer 45, the light emitting layers 46R, 46G, 46B, and the electron transport layer 47 correspond to an organic layer. In this embodiment, the light emitting layer 46R is a red organic EL layer, the light emitting layer 46G is a green organic EL layer, and the light emitting layer 46B is a blue organic EL layer. The light emitting layers 46R, 46G, and 46B are each formed in a pattern corresponding to a light emitting element (also sometimes referred to as an organic EL element) emitting red, green, and blue colors. The first electrode 44 is formed by separating the light emitting elements. The hole-transporting layer 45, the electron-transporting layer 47, and the second electrode 48 may be formed in common with the plurality of light-emitting elements 42, or may be formed according to the light-emitting elements. In order to prevent the first electrode 44 and the second electrode 48 from being short-circuited by a foreign object, an insulating layer 49 is provided between the first electrodes 44. In addition, since the organic EL layer is degraded by moisture, oxygen, and the like, a protective layer 50 is provided for protecting the organic EL element from moisture, oxygen, and the like.

To form the organic EL layer in units of light-emitting elements, a method of forming a film through a mask is used. In recent years, high-definition display devices have been developed, and a mask having an opening width of several tens of μm is used in forming the organic EL layer. When a film is formed using such a mask, the position of the mask and the substrate may be deviated when the mask is heated from the evaporation source during the film formation and thermally deformed, and the pattern of the thin film formed on the substrate may deviate from the desired position. And formed. Therefore, in terms of the film formation of these organic EL layers, it is suitable to use the vacuum evaporation apparatus related to the present invention.

Next, a method for manufacturing an organic EL display device will be described in detail. example.

First, a substrate 43 on which a circuit (not shown) for driving an organic EL display device and a first electrode 44 are formed is prepared.

An acrylic resin is formed by spin coating on the substrate 43 on which the first electrode 44 is formed, and the acrylic resin is patterned so that an opening is formed in a portion where the first electrode 44 is formed to form an insulating layer 49 by photolithography. This opening corresponds to a light-emitting area where the light-emitting element actually emits light.

The substrate 43 on which the insulating layer 49 is patterned is carried into a vacuum evaporation apparatus, and the hole transporting layer 45 is formed as a layer common to the first electrode 44 in the display area. The hole transport layer 45 is formed by vacuum evaporation. Actually, the hole transmission layer 45 is formed to have a larger size than the display area 41, so a high-definition mask is not required.

Next, a red-emitting light-emitting layer 46R is formed on the portion where the red-emitting element is disposed by using a vapor deposition mask. First, the substrate 43 to which the hole transport layer 45 is formed is carried into the vapor deposition region 3 of the vacuum vapor deposition apparatus of FIG. 1 and aligned with the position of a mask having an opening corresponding to a region where the first light emitting element 42R is formed. (alignment).

In the case where the used mask is not thermally saturated, there is a case where the mask is heated from the evaporation source during the film formation and thermally deformed, causing the position of the mask and the substrate to deviate, and the light-emitting layer 46R cannot be formed at a desired position Yu. Therefore, before the substrate 43 starts vapor deposition, it is preferable to perform pre-heating with the heat of the vapor deposition source 2 until the mask becomes thermally saturated. Whether the mask is thermally saturated is to check whether the temperature of the mask is stable. Specifically, to check whether the time variation of the temperature of the mask that rises due to the heat of the evaporation source 2 falls within a predetermined range, that is, can. The predetermined range can be determined according to the accuracy required for film formation.

On the other hand, the organic EL material, which is the material of the light emitting layer 46R, is housed in the vapor deposition source 2 and is preheated for preparation for evaporating the organic material and attaching it to the substrate. Preheating is to heat the evaporation source 2 for several minutes at the same temperature as the heating temperature during film formation in order to stabilize the molten state of the film-forming material contained in the evaporation source 2. Whether or not the molten state of the film forming material is stable may be determined by looking at the time change of the film forming speed (evaporation rate) obtained using a film thickness monitor (not shown). When the melting state of the film-forming material is stable, the amount of vapor of the film-forming material released from the evaporation source 2 is stable, so the variation of the film-forming speed falls within a predetermined range.

In this example, the preheating of the mask is performed by using the heat generated by the preheating of the evaporation source 2 and the time required for the preheating. Specifically, in a state where the shutter 7 is closed so that vapor does not adhere to the substrate, the vapor deposition source 2 is moved back and forth in the vapor deposition area to heat the mask. When the temperature of the mask is stable during the period before the end of the preheating, the preheating of the vapor deposition source 2 is completed and the film can be formed. In order to start the film formation at the same time as the preheating of the vapor deposition source 2 is completed, it is more efficient when the substrate and the mask are first aligned during the pre-heating of the mask. In addition, when the temperature of the mask is not stable at the end of the preheating, the mask is continuously heated by the evaporation source 2 until the temperature of the mask is stable.

The mask is thermally stable. After confirming that the alignment of the substrate and the mask is completed, the vapor deposition source 2 is moved to one of two retreat regions provided between the vapor deposition region 3 in a direction in which the guide rail 10 extends. After that, open the mask 7 and The vapor deposition source 2 is moved toward the other retreat area to start the vapor deposition, and the light-emitting layer 46R is formed by moving back and forth between the two retreat areas.

Thus, according to this example, the mask is not deformed during the film formation of the light emitting layer 46R, so the light emitting layer 46R can be formed on the substrate in a predetermined pattern. Furthermore, it does not require additional heating equipment, nor does it need to consume time just for pre-heating the mask. That is, while preheating the evaporation source 2, the heat generated during the preheating, the standby time for preheating, and the like are used to efficiently perform pre-heating of the mask.

Next, like the film formation of the light emitting layer 46R, a green light emitting layer 46G is formed using a mask having an opening corresponding to a region where the second light emitting element 42G is formed. Next, a blue light-emitting layer 46B is formed using a mask having an opening corresponding to a region where the third light-emitting element 42B is formed. When the light-emitting layers 46G and 46B are formed into films, the vapor deposition source 2 is moved relative to the mask, as before the film formation of the light-emitting layer 46R, and the film formation is started after confirming that the mask is thermally saturated.

The masks that were once used for film formation of each of the light-emitting layers 46R, 46G, and 46B were placed in a vacuum evaporation chamber and waited until the next substrate was set. Therefore, since the heat of the mask is maintained through the vacuum, the thermal saturation state of the mask is maintained. Therefore, it is possible to omit the pre-heating of the mask before the next substrate starts film formation. When the mask and the substrate are brought into alignment and contact, the heat of the mask leaks to the substrate, the temperature of the mask decreases, and the deposition rate of the vapor-deposited film is changed. Before the vapor deposition, the mask may be heated in advance in the same manner as the heat from the vapor deposition source 2.

After the film formation of the light emitting layers 46G and 46B is completed, the electron transport layer 47 is formed on the entire display area 41. The electron transport layer 47 is a layer that is common to the first to third light emitting layers.

The substrate on which the electron transport layer 47 is formed is moved to a sputtering device, a second electrode 48 is formed, and then the plasma CVD device is moved to form a protective layer 50 to complete the organic EL display device 40.

The substrate 43 with the insulating layer 49 patterned is carried into a vacuum evaporation device until the formation of the protective layer 50 is completed. When the substrate is exposed to an environment containing moisture, oxygen, etc., there is a light-emitting layer made of an organic EL material. Oxygen may deteriorate. Therefore, in this example, the loading and unloading of the substrate between the film forming apparatuses is performed in a vacuum environment or an inert gas environment.

In the above example, the mask is heated in advance during film formation of the light-emitting layer, but the mask may be heated beforehand in forming other layers.

The organic EL display device thus obtained can form a light-emitting layer with high accuracy for a light-emitting element. Therefore, when the above-mentioned manufacturing method is used, it is possible to suppress the occurrence of defects in the organic EL display device due to the positional deviation of the light emitting layer.

In addition, although the manufacturing method of the organic EL display device is discussed here, it is not limited to this. All the manufacturing methods of the organic electronic device regarding the pattern of the organic layer formed by using a mask during vapor deposition are equally applicable. this invention. The invention is not limited to an organic film, and the invention can be applied to the formation of an inorganic film.

Claims (12)

A vacuum evaporation device is provided in an evaporation chamber with an evaporation source for vapor deposition of a substrate through a mask, and an evaporation source moving mechanism for moving the evaporation source with respect to the substrate during vapor deposition or an evaporation source moving mechanism. The substrate moving mechanism that moves the substrate with respect to the evaporation source during vapor deposition is characterized in that the evaporation source moving mechanism or the substrate moving mechanism is configured to use the evaporation source before starting evaporation to the substrate. The aforementioned mask is heated beforehand. The vacuum vapor deposition device according to item 1 of the patent application, wherein the preheating before vapor deposition for stabilizing the film-forming speed of the film-forming material evaporated from the evaporation source is utilized from the evaporation source. The pre-heating of the mask is performed by heating. For example, in the vacuum evaporation device according to the first item of the patent application, a mask is provided on the evaporation source, and the relative positional relationship between the evaporation source and the mask is changed while the mask is closed. The aforementioned mask is heated beforehand. For example, in the vacuum vapor deposition device according to the scope of application for the first item, the evaporation source moving mechanism or the substrate moving mechanism is configured such that the position of the substrate to be vapor-deposited initially and the mask are aligned with the mask beforehand. Heating was performed in parallel. For example, the vacuum evaporation device according to any one of the claims 1 to 4, in which a plurality of substrates are juxtaposed in a direction orthogonal to the moving direction of the evaporation source for vapor deposition of the substrate in the vapor deposition chamber. A vapor deposition area for each of the plurality of vapor deposition areas is provided with a retreat area for retreating the evaporation source outside the vapor deposition area, and the evaporation source moving mechanism is configured to move the evaporation source to The evaporation source moving mechanism is configured to move from one of the vapor deposition regions to the other vapor deposition region in the same direction as the direction in which the vapor deposition regions are arranged in parallel. When the mask is heated in advance, after heating the mask disposed in one of the evaporation regions, the mask is moved to the other side of the evaporation region without moving away from the evaporation source to the escape region, and moved to the other one. Evaporation area. A vacuum vapor deposition device is provided in an evaporation chamber with an evaporation source for vapor deposition of a substrate through a mask, and during vapor deposition, any one of a longitudinal direction and a width direction of the substrate is formed. The film moving direction causes the evaporation source to move back and forth in this film forming moving direction, and the evaporation source moving mechanism is configured to start continuously vapor-depositing a plurality of the substrates while maintaining a vacuum state of the evaporation chamber. Prior to continuous evaporation, the evaporation source is moved relative to the mask to perform pre-heating of the mask. A method for manufacturing a vapor-deposited film, comprising: a process of setting a substrate in a vapor deposition chamber; a process of heating a film-forming material stored in an evaporation source to stabilize a film-forming speed; and a method for making the vapor-deposition through a mask A process of attaching vapor of a plating material to the substrate, wherein the relative positional relationship between the evaporation source and the substrate is changed during the process of stabilizing the film formation speed, and the mask is heated by the heat of the evaporation source . For example, in the method for manufacturing a vapor-deposited film according to item 7 of the scope of patent application, the vapor of the vapor-deposited material is shielded from being attached to the substrate while the mask is heated by the heat of the evaporation source. For example, in the method for producing a vapor-deposited film according to item 8 of the patent application, the mask is heated until the temperature of the mask is stabilized before the procedure of attaching the vapor of the film-forming material to the substrate. A method for manufacturing an organic electronic device. The organic electronic device includes an element having a plurality of organic layers sandwiching a pair of electrodes on a substrate, and is characterized in that the substrate includes a substrate on which a plurality of electrodes are formed. A procedure of a chamber; a procedure of aligning the substrate with a mask having a plurality of openings; a procedure of heating a film-forming material stored in an evaporation source to stabilize the film-forming speed; and A process of adhering vapor of the film-forming material to the substrate to form at least a part of the organic layer; wherein the relative positional relationship between the evaporation source and the substrate is changed during the process of stabilizing the film-forming speed, and transmitted The mask is heated by the heat of the evaporation source. According to the method for manufacturing an organic electronic device according to claim 10, the vapor of the vapor deposition material is shielded from being adhered to the substrate while the mask is heated by the heat of the evaporation source. According to the method for manufacturing an organic electronic device according to claim 11, wherein the mask is heated until the temperature of the mask is stabilized before the procedure of attaching the vapor of the vapor deposition material to the substrate.