JP5994089B2 - Vapor deposition equipment - Google Patents
Vapor deposition equipment Download PDFInfo
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- JP5994089B2 JP5994089B2 JP2011290297A JP2011290297A JP5994089B2 JP 5994089 B2 JP5994089 B2 JP 5994089B2 JP 2011290297 A JP2011290297 A JP 2011290297A JP 2011290297 A JP2011290297 A JP 2011290297A JP 5994089 B2 JP5994089 B2 JP 5994089B2
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- 238000007740 vapor deposition Methods 0.000 title claims description 106
- 239000000758 substrate Substances 0.000 claims description 154
- 239000002184 metal Substances 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 238000003384 imaging method Methods 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 9
- 239000010409 thin film Substances 0.000 claims description 7
- 238000001704 evaporation Methods 0.000 claims description 5
- 230000007261 regionalization Effects 0.000 claims description 5
- 230000032258 transport Effects 0.000 description 14
- 238000000151 deposition Methods 0.000 description 9
- 230000008021 deposition Effects 0.000 description 7
- 238000001179 sorption measurement Methods 0.000 description 5
- 230000007547 defect Effects 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 229910001374 Invar Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000005019 vapor deposition process Methods 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
Description
本発明は、基板ホルダーに静電吸着された基板上に薄膜パターンを蒸着形成する蒸着装置に関し、特に静電吸着の不具合が発生しても基板ホルダーから基板が脱落するのを防止しようとする蒸着装置に係るものである。 The present invention relates to a vapor deposition apparatus for depositing and forming a thin film pattern on a substrate electrostatically attracted to a substrate holder, and in particular, vapor deposition that is intended to prevent the substrate from falling off the substrate holder even if electrostatic adsorption defects occur. It concerns the device.
従来の蒸着装置は、基板と蒸着マスクとを対向させ、蒸着源から、蒸着マスクに設けられた開口パターンを通して基板の表面に蒸着材料を蒸着し、薄膜パターンの形成を行なうものであり、蒸着マスクの面積が基板の面積より小さく、基板を一方向に移動させながら蒸着を行なうようになっていた（例えば、特許文献１参照）。 A conventional vapor deposition apparatus is a device in which a substrate and a vapor deposition mask are made to face each other, a vapor deposition material is vapor-deposited on the surface of the substrate from an vapor deposition source through an opening pattern provided in the vapor deposition mask, and a thin film pattern is formed. Is smaller than the area of the substrate, and vapor deposition is performed while moving the substrate in one direction (see, for example, Patent Document 1).
しかし、このような従来の蒸着装置においては、蒸着が真空室内で行われるため、基板は、一方向に移動可能に設けられた基板ホルダーに静電吸着して保持されるのが一般的であり、基板を搬送しながら行う蒸着中に、搬送時の機械振動等により静電吸着が外れて基板が落下する不具合が発生するおそれがあった。特に、サイズの大きい大型基板の場合は、その自重により静電吸着がはずれ易くなり、上記不具合の発生がより大きな問題となっていた。 However, in such a conventional vapor deposition apparatus, since vapor deposition is performed in a vacuum chamber, the substrate is generally held by electrostatic adsorption on a substrate holder that is movable in one direction. During the vapor deposition performed while the substrate is being transported, there is a possibility that a problem occurs in which the electrostatic adsorption is removed due to mechanical vibration during transport and the substrate falls. In particular, in the case of a large substrate having a large size, electrostatic attraction tends to come off due to its own weight, and the occurrence of the above-described problems has become a larger problem.
そこで、本発明は、このような問題点に対処し、静電吸着の不具合が発生しても基板ホルダーから基板が脱落するのを防止できる蒸着装置を提供することを目的とする。 Therefore, the present invention addresses such problems, and an object of the present invention is to provide a vapor deposition apparatus that can prevent the substrate from dropping off from the substrate holder even if electrostatic adsorption defects occur.
上記目的を達成するために、本発明による蒸着装置は、真空室内に、蒸着材料を蒸発させる蒸着源と、該蒸着源に対向させて基板を保持する基板ホルダーと、前記基板表面に予め設定された複数のパターン形成領域に対応して複数の開口を並べて形成した蒸着マスクと、前記基板ホルダーを一方向に移動させる搬送手段とを備え、前記蒸着源から蒸発した蒸着材料を前記蒸着マスクの開口を介して前記基板上に蒸着させ前記薄膜パターンを形成する蒸着装置であって、前記基板ホルダーは、前記基板を保持する保持面の中央領域に設けられた静電チャックと、前記基板の少なくとも両端縁部領域に対応して前記保持面に設けられた磁気チャックとを備え、前記基板を静電吸着すると共に、別に形成して前記基板表面の前記両端縁部領域に設置された磁性金属板を磁気的に吸着して前記基板を保持する構成とされ、前記保持面が上向き状態で前記基板の授受を行い、前記保持面が下向き状態で保持された前記基板を前記蒸着マスクと対向させるように一端部が回動可能に前記搬送手段に支持されているものである。 In order to achieve the above object, a vapor deposition apparatus according to the present invention is preset in a vacuum chamber with a vapor deposition source for evaporating a vapor deposition material, a substrate holder for holding the substrate facing the vapor deposition source, and the substrate surface. A vapor deposition mask formed by arranging a plurality of openings corresponding to a plurality of pattern formation regions, and a conveying means for moving the substrate holder in one direction, and the vapor deposition material evaporated from the vapor deposition source is opened in the vapor deposition mask. An evaporation apparatus for forming the thin film pattern by evaporating on the substrate via an electrostatic chuck provided in a central region of a holding surface for holding the substrate; and at least both ends of the substrate A magnetic chuck provided on the holding surface corresponding to the edge region, and electrostatically attracting the substrate, and separately formed and installed in the both edge region of the substrate surface The magnetic metal plate adsorbed to magnetically is configured to hold the substrate, wherein the holding surface transmits and receives the substrate in an upward state, the depositing said substrate on which the holding surface is held in a downward state One end is rotatably supported by the transport means so as to face the mask .
好ましくは、前記蒸着マスクの前記複数の開口は、一定間隔で並べて設けられており、前記基板ホルダーを前記蒸着マスクの前記開口の並び方向と交差する方向に一定速度で移動させる搬送手段をさらに備えるのが望ましい。 Preferably, the plurality of openings of the vapor deposition mask are provided side by side at a constant interval, and further includes a transport unit that moves the substrate holder at a constant speed in a direction intersecting the direction of arrangement of the openings of the vapor deposition mask. Is desirable.
より好ましくは、前記基板ホルダーは、前記移動方向に平行な両端縁部領域に前記磁気チャックを備えるのが望ましい。 More preferably, the substrate holder is provided with the magnetic chuck in both end edge regions parallel to the moving direction.
さらに、前記磁性金属板には、前記基板ホルダーの前記移動方向に平行な両端縁部領域に対応して、前記基板の両端縁部領域に互いに平行に予め形成された細線状の追従パターンを観察可能な開口窓が設けられ、前記基板ホルダーと前記蒸着マスクとを相対的に前記基板ホルダーの搬送方向と交差する方向に移動可能なアライメント手段と、前記磁性金属板の前記開口窓を通して前記基板の前記追従パターンを撮像する撮像手段と、をさらに備えるのが望ましい。 Further, on the magnetic metal plate, a thin line-shaped follow pattern formed in advance in parallel with each other at both end edge regions of the substrate is observed corresponding to both end edge regions parallel to the moving direction of the substrate holder. Possible opening windows are provided, alignment means capable of relatively moving the substrate holder and the vapor deposition mask in a direction intersecting the transport direction of the substrate holder, and the substrate through the opening window of the magnetic metal plate. It is desirable to further include imaging means for imaging the follow-up pattern.
そして、前記磁性金属板は、前記基板と前記蒸着マスクとの間のギャップ寸法以下の厚みで形成されているのが望ましい。 The magnetic metal plate is preferably formed with a thickness equal to or less than a gap dimension between the substrate and the vapor deposition mask.
本発明の蒸着装置によれば、基板ホルダーに基板を静電チャックと同時に磁気チャックにより固定するようになっているので、静電吸着の不具合が発生しても磁気チャックが機能して基板ホルダーから基板が脱落するのを防止することができる。 According to the vapor deposition apparatus of the present invention, the substrate is fixed to the substrate holder by the magnetic chuck at the same time as the electrostatic chuck. It is possible to prevent the substrate from falling off.
以下、本発明の実施形態を添付図面に基づいて詳細に説明する。図１は本発明による蒸着装置の実施形態の要部を示す正面図であり、図２は図１の左側面図である。この蒸着装置は、基板を一方向に搬送しながら基板よりも面積の小さい蒸着マスクを使用して薄膜パターンを蒸着形成するもので、真空室内に、搬送手段１と、基板ホルダー２と、蒸着マスク３と、蒸着源４と、撮像手段５と、アライメント手段６とを備えて構成されている。 Embodiments of the present invention will be described below in detail with reference to the accompanying drawings. FIG. 1 is a front view showing a main part of an embodiment of a vapor deposition apparatus according to the present invention, and FIG. 2 is a left side view of FIG. This vapor deposition apparatus deposits and forms a thin film pattern using a vapor deposition mask having a smaller area than the substrate while conveying the substrate in one direction. In the vacuum chamber, the conveyance means 1, the substrate holder 2, and the vapor deposition mask are formed. 3, a vapor deposition source 4, an imaging unit 5, and an alignment unit 6.
上記搬送手段１は、基板７を図１に示す矢印Ａ方向に一定速度で搬送するもので、後述の基板ホルダー２を支持して矢印Ａ方向に移動させる例えばリニアモータアクチュエータであり、レール８と可動部９とを備えて構成されている。そして、真空室内に往路及び復路を備えて閉ループに形成され、蒸着が終了した基板ホルダー２をスタート位置まで戻すことができるようになっている。 The transport means 1 transports the substrate 7 at a constant speed in the direction of arrow A shown in FIG. 1 and is, for example, a linear motor actuator that supports a substrate holder 2 to be described later and moves it in the direction of arrow A. The movable part 9 is provided. Then, a forward loop and a return path are provided in the vacuum chamber so as to form a closed loop, and the substrate holder 2 after vapor deposition can be returned to the start position.
上記搬送手段１に一端部２ａが回動可能に支持されて基板ホルダー２が設けられている。この基板ホルダー２は、平坦な保持面２ｂに基板７の裏面を吸着して保持するものであり、図３に示すように、保持面２ｂの中央領域に高電圧源２１により直流電圧が印加可能に形成されて静電チャックが設けられ、直流電圧の印加により基板７を保持面２ｂに静電吸着することができるようになっている。また、矢印Ａで示す移動方向に平行な両端縁部領域には、電磁石２２を内蔵して磁気チャックが設けられ、電磁石２２の磁力により、それに対応して基板７の両端縁部領域に設置された磁性金属板１０を吸着して基板７を保持面２ｂに保持するようになっている。この場合、磁性金属板１０は、基板７と後述の蒸着マスク３との間のギャップ寸法以下の厚みで形成されるのが望ましい。 A substrate holder 2 is provided with one end 2a rotatably supported by the transport means 1. The substrate holder 2 is configured to attract and hold the back surface of the substrate 7 on a flat holding surface 2b. As shown in FIG. 3, a DC voltage can be applied to the central region of the holding surface 2b by a high voltage source 21. The electrostatic chuck is provided so that the substrate 7 can be electrostatically attracted to the holding surface 2b by applying a DC voltage. Further, in both end edge regions parallel to the moving direction indicated by the arrow A, a magnetic chuck is provided with a built-in electromagnet 22 and is installed in the both end edge regions of the substrate 7 corresponding to the magnetic force of the electromagnet 22. The magnetic metal plate 10 is adsorbed to hold the substrate 7 on the holding surface 2b. In this case, the magnetic metal plate 10 is preferably formed with a thickness equal to or less than a gap dimension between the substrate 7 and a vapor deposition mask 3 described later.
ここで、上記磁性金属板１０は、例えばニッケル又はニッケル合金の磁性材料によって、図４に示すように基板７の縁部領域に対応した短冊状に形成され、磁性材料を貫通する複数の開口窓１１が長軸に沿って設けられている。これにより、開口窓１１を通して基板７の上記両縁部領域に互いに平行に予め形成された後述の追従マーク１４を後述の撮像手段５により観察できるようになっている。 Here, the magnetic metal plate 10 is formed of a magnetic material such as nickel or a nickel alloy in a strip shape corresponding to the edge region of the substrate 7 as shown in FIG. 11 is provided along the long axis. As a result, a follow-up mark 14 described later formed in advance in parallel with each other on both edge regions of the substrate 7 through the opening window 11 can be observed by the image pickup means 5 described later.
また、基板ホルダー２は、図示省略の載荷位置（loading position）において、図５（ａ）に示すように、保持面２ｂが上を向くように一端部２ａを中心に矢印Ｂ方向に回動し、搬入ロボットによって真空室内に搬入された基板７を保持面２ｂに受けて静電的及び磁気的に吸着した後、同図（ｂ）に示すように矢印Ｃ方向に反転して保持面２ｂが下を向くように回動し、基板７を後述の蒸着マスク３に対して対向させるようになっている。また、図示省略の除荷位置（unloading position）においては、保持面２ｂが上を向くように矢印Ｂ方向に回動した後、基板７の静電的及び磁気的な吸着を解除して、蒸着が終了した基板７を搬出ロボットにより真空室外に搬出できるようになっている。なお、図５（ａ）において符号１２は、基板７の縁部領域に設けられた後述の追従マーク１４と矢印Ａで示す基板搬送方向（以下「Ｘ方向」という）とが平行となるように基板７を予め位置合わせするための二次元カメラであり、Ｘ軸に平行に２台が並べて配置されている。 Further, as shown in FIG. 5 (a), the substrate holder 2 rotates in the direction of arrow B about the one end 2a so that the holding surface 2b faces upward at a loading position (not shown). After the substrate 7 carried into the vacuum chamber by the carry-in robot is received by the holding surface 2b and electrostatically and magnetically attracted, the substrate 7 is reversed in the direction of arrow C as shown in FIG. It rotates so that it may face down, and the board | substrate 7 is made to oppose the vapor deposition mask 3 mentioned later. Further, in an unloading position (not shown), after rotating in the direction of arrow B so that the holding surface 2b faces upward, the electrostatic and magnetic adsorption of the substrate 7 is released, and vapor deposition is performed. The substrate 7 that has been completed can be carried out of the vacuum chamber by the carry-out robot. In FIG. 5A, reference numeral 12 indicates that a follow-up mark 14 (described later) provided in the edge region of the substrate 7 and a substrate transport direction (hereinafter referred to as “X direction”) indicated by an arrow A are parallel to each other. This is a two-dimensional camera for aligning the substrate 7 in advance, and two cameras are arranged in parallel to the X axis.
ここで使用する基板７は、有機ＥＬ表示用のＴＦＴ基板であり、図６に示すように、透明なガラス基板の表面にて中央領域７ａに、赤（Ｒ）、緑（Ｇ）及び青（Ｂ）色対応のアノード電極２３の列が一定の配列ピッチで形成されたもので、同じ色（例えば赤色）に対応したアノード電極２３の列上に蒸着形成しようとする対応色（例えば赤色）の有機ＥＬ層（薄膜パターン）に対応したストライプ状の複数のパターン形成領域１３がアノード電極２３の列の３倍の配列ピッチで予め設定されている。また、このパターン形成領域１３の長軸に平行な両端縁部領域７ｂには、夫々、上記パターン形成領域１３の長軸に平行に線状の追従マーク１４が互いに一定距離はなれて平行にパターン形成されている。そして、基板７は、上記基板ホルダー２に上記追従マーク１４が矢印Ａで示す基板搬送方向に平行となるように保持される。 The substrate 7 used here is a TFT substrate for organic EL display. As shown in FIG. 6, red (R), green (G), and blue (G) are formed in the central region 7a on the surface of a transparent glass substrate. B) A row of anode electrodes 23 corresponding to colors is formed at a constant arrangement pitch, and a corresponding color (for example, red) to be deposited on the column of anode electrodes 23 corresponding to the same color (for example, red). A plurality of stripe-shaped pattern forming regions 13 corresponding to the organic EL layers (thin film patterns) are set in advance at an arrangement pitch three times that of the rows of anode electrodes 23. Further, in both end edge regions 7b parallel to the long axis of the pattern forming region 13, linear tracking marks 14 are formed in parallel with the long axis of the pattern forming region 13 at a predetermined distance from each other. Has been. The substrate 7 is held by the substrate holder 2 so that the follow-up mark 14 is parallel to the substrate transport direction indicated by the arrow A.
上記基板ホルダー２と対向するように蒸着マスク３が設けられている。この蒸着マスク３は、基板７上に蒸着形成しようとする例えばＲ有機ＥＬ層のパターン形成領域１３外の部分を遮蔽するためのもので、図７に示すように、基板７の面積よりも小さい面積を有する金属板の中央領域３ａに、上記Ｒ有機ＥＬ層に対応して貫通する複数の開口１５をＲ有機ＥＬ層の配列ピッチと同じ配列ピッチ（アノード電極２３の列の３倍の配列ピッチ）で並べて形成したものである。より詳細には、蒸着マスク３は、Ｘ方向の長さが基板７の同方向の長さよりも短く、基板搬送方向と交差する方向（以下「Ｙ方向」という）の長さが基板７の同方向の長さと同じかそれよりも長い短冊形状をなしている。そして、Ｙ方向の両端縁部領域３ｂに、一定形状（例えば四角形）の開口部を設けて１対のアライメントマーク１６が形成されている。なお、蒸着マスク３は、熱膨張係数が１０×１０−６／℃以下の金属材料を使用するのが望ましく、好ましくは、熱膨張係数が２×１０−６／℃以下のインバー又は１×１０−６／℃以下のスーパーインバーが望ましい。 A vapor deposition mask 3 is provided so as to face the substrate holder 2. The vapor deposition mask 3 is for shielding a portion outside the pattern formation region 13 of the R organic EL layer to be vapor-deposited on the substrate 7, and is smaller than the area of the substrate 7 as shown in FIG. In the central region 3a of the metal plate having an area, a plurality of openings 15 penetrating therethrough corresponding to the R organic EL layer are arranged at the same arrangement pitch as the arrangement pitch of the R organic EL layer (an arrangement pitch three times as long as the row of anode electrodes 23). ) Are arranged side by side. More specifically, the vapor deposition mask 3 has a length in the X direction that is shorter than the length in the same direction of the substrate 7, and a length in a direction intersecting with the substrate transport direction (hereinafter referred to as “Y direction”). It has a strip shape that is the same as or longer than the direction length. Then, a pair of alignment marks 16 is formed by providing openings of a certain shape (for example, a quadrangle) in both end edge regions 3b in the Y direction. The vapor deposition mask 3 is desirably made of a metal material having a thermal expansion coefficient of 10 × 10 −6 / ° C. or less, preferably invar having a thermal expansion coefficient of 2 × 10 −6 / ° C. or less, or 1 × 10 A super invar of −6 / ° C. or lower is desirable.
上記蒸着マスク３の下方には、該蒸着マスク３に対向して蒸着源４が設けられている。この蒸着源４は、基板７に形成しようとする薄膜パターンの蒸着材料を蒸発させるものであり、蒸着マスク３の長軸方向（Ｙ方向）に長細い、上側を開口した箱状のルツボ１７と、ルツボ１７に収納された蒸着材料を加熱して蒸発させるヒータ１８と、ルツボ１７の開口を開閉するシャッタ１９とを備えて構成されている。なお、本実施形態においては、シャッタ１９を蒸着マスク３の下面に近接対向して配置した場合について示しているが、ルツボ１７の開口に近接対向させて設けてもよい。 A vapor deposition source 4 is provided below the vapor deposition mask 3 so as to face the vapor deposition mask 3. The vapor deposition source 4 evaporates a vapor deposition material of a thin film pattern to be formed on the substrate 7, and is a box-like crucible 17 that is long in the major axis direction (Y direction) of the vapor deposition mask 3 and has an upper opening. The heater 18 for heating and evaporating the vapor deposition material stored in the crucible 17 and the shutter 19 for opening and closing the opening of the crucible 17 are provided. In the present embodiment, the case where the shutter 19 is arranged close to and opposed to the lower surface of the vapor deposition mask 3 is shown, but the shutter 19 may be provided close to and opposed to the opening of the crucible 17.
そして、蒸着マスク３と蒸着源４との間には、図２に示すように、蒸着マスク３のアライメントマーク１６の形成位置よりも内側にて複数の開口１５を形成した中央領域３ａの周縁部と、ルツボ１７の開口周縁部とをつなぐ筒状の防着板２０が設けられ、蒸着材料が上記中央領域３ａ外の周辺領域に飛散し、蒸着マスク３のアライメントマーク１６を介して基板７に付着するのを防止している。 And between the vapor deposition mask 3 and the vapor deposition source 4, as shown in FIG. 2, the peripheral part of the center area | region 3a which formed several opening 15 inside the formation position of the alignment mark 16 of the vapor deposition mask 3 And a cylindrical deposition preventing plate 20 that connects the opening peripheral edge of the crucible 17, the vapor deposition material scatters to the peripheral region outside the central region 3 a, and is applied to the substrate 7 via the alignment mark 16 of the vapor deposition mask 3. Prevents adhesion.
上記蒸着マスク３の両端縁部領域３ｂの下方には、夫々撮像手段５が設けられている。この撮像手段５は、蒸着マスク３に設けられたアライメントマーク１６と該アライメントマーク１６を通して観察される基板７のＸ軸に平行な両端縁部領域７ｂの表面に設けられた追従マーク１４とを同一視野内に捕らえて同時に撮影するものであり、Ｙ方向に複数の受光エレメントを一直線に並べて備えたラインカメラである。なお、撮像手段５の撮影領域を照明可能に図示省略の照明手段が設けられている。 The imaging means 5 is provided below the both-ends edge area | region 3b of the said vapor deposition mask 3, respectively. This imaging means 5 has the same alignment mark 16 provided on the vapor deposition mask 3 and the follow-up mark 14 provided on the surface of both edge region 7b parallel to the X axis of the substrate 7 observed through the alignment mark 16. This is a line camera that captures images in the field of view simultaneously and has a plurality of light receiving elements arranged in a straight line in the Y direction. Note that an illuminating unit (not shown) is provided so as to illuminate the imaging region of the imaging unit 5.
上記蒸着マスク３をマスクの面に平行なＸＹ平面内をＹ方向に移動可能にアライメント手段６が設けられている。このアライメント手段６は、撮像手段５で撮影して検出されたアライメントマーク１６及び追従マーク１４の位置関係に基づいて、基板７の搬送中常時、蒸着マスク３をＸＹ平面内にてＹ方向に移動させて基板７と蒸着マスク３との位置ずれを補正するもので、蒸着マスク３の中央領域３ａに対応して貫通する開口部を形成し、蒸着マスク３を基板７面に対して１００μｍ程度のギャップを介して近接対向させて保持する蒸着マスク３のマスクホルダーの役目も果たしている。 An alignment means 6 is provided so that the vapor deposition mask 3 can be moved in the Y direction within an XY plane parallel to the mask surface. The alignment means 6 moves the deposition mask 3 in the Y direction within the XY plane at all times during the transport of the substrate 7 based on the positional relationship between the alignment mark 16 and the tracking mark 14 detected by photographing with the imaging means 5. In order to correct the positional deviation between the substrate 7 and the vapor deposition mask 3, an opening is formed that penetrates the central region 3 a of the vapor deposition mask 3. The vapor deposition mask 3 is about 100 μm from the surface of the substrate 7. It also serves as a mask holder for the vapor deposition mask 3 that is held close to each other through a gap.
次に、このように構成された蒸着装置の動作について説明する。なお、ここでは、一例としてＲ有機ＥＬ層を形成する場合について説明する。
先ず、初期状態においては、基板ホルダー２は、図５（ａ）に示すように、載荷位置で保持面２ｂを上向きにして基板７が搬入されるまで待機している。
Next, operation | movement of the vapor deposition apparatus comprised in this way is demonstrated. Here, a case where an R organic EL layer is formed will be described as an example.
First, in the initial state, as shown in FIG. 5A, the substrate holder 2 stands by until the substrate 7 is loaded with the holding surface 2b facing upward at the loading position.
続いて、予め両端縁部領域７ｂに磁性金属板１０を設置した基板７が搬入ロボットによって搬入されて基板ホルダー２の保持面２ｂ上に位置づけられる。この状態で基板７の上記両端縁部領域７ｂに設けられた追従マーク１４のうち、一方の追従マーク１４がＸ軸に平行に並べられた２台の２次元カメラにより、上記磁性金属板１０に設けられた開口窓１１を通して撮像され、両カメラで検出された追従マーク１４が１直線につながるように基板７の角度が調整される。それが終了すると、基板ホルダー２の保持面２ｂに高圧の直流電圧が印加されて基板７が保持面２ｂに静電的に保持されると共に、電磁石２２がオン駆動されて、その磁力により基板７の両端縁部領域７ｂに設置された磁性金属板１０を磁気的に吸着して基板７が保持面２ｂに保持される。 Subsequently, the substrate 7 on which the magnetic metal plate 10 is previously installed in both end edge regions 7 b is carried in by the carry-in robot and positioned on the holding surface 2 b of the substrate holder 2. In this state, among the tracking marks 14 provided on the both end edge regions 7b of the substrate 7, one of the tracking marks 14 is arranged on the magnetic metal plate 10 by two two-dimensional cameras arranged in parallel to the X axis. The angle of the substrate 7 is adjusted so that the follow-up marks 14 imaged through the provided opening window 11 and detected by both cameras are connected to one straight line. When this is finished, a high DC voltage is applied to the holding surface 2b of the substrate holder 2 so that the substrate 7 is electrostatically held on the holding surface 2b, and the electromagnet 22 is turned on. The substrate 7 is held on the holding surface 2b by magnetically attracting the magnetic metal plate 10 installed in the both edge region 7b.
次いで、基板ホルダー２は、図５（ｂ）に示すように、搬送手段１に支持された一端部２ａ側を中心に１８０度矢印Ｃ方向に回動して基板７の表面を下向きにする。同時に、搬送手段１が起動して基板７の搬送が開始される。 Next, as shown in FIG. 5 (b), the substrate holder 2 rotates in the direction of arrow C by 180 degrees around the one end 2 a supported by the conveying means 1 so that the surface of the substrate 7 faces downward. At the same time, the transfer means 1 is activated and the transfer of the substrate 7 is started.
基板７が搬送手段１の往路を搬送されて撮像手段５の上側に達すると、撮像手段５により、蒸着マスク３に設けられたアライメントマーク１６の開口部を通して基板７のＸ方向に平行な両端縁部領域７ｂの表面に設けられた追従マーク１４と蒸着マスク３のアライメントマーク１６とが同時に撮影される。 When the substrate 7 is conveyed on the forward path of the conveying means 1 and reaches the upper side of the imaging means 5, the imaging means 5 causes both end edges parallel to the X direction of the substrate 7 through the openings of the alignment marks 16 provided on the vapor deposition mask 3. The tracking mark 14 provided on the surface of the partial area 7b and the alignment mark 16 of the vapor deposition mask 3 are photographed simultaneously.
撮像手段５で撮影された画像は、図示省略の制御手段において画像処理され、Ｙ方向の輝度変化に基づいて追従マーク１４の中心位置とアライメントマーク１６の開口中心位置とが検出され、両マークの位置ずれ量が演算される。次いで、アライメント手段６が駆動されて上記位置ずれ量が許容値内となるように蒸着マスク３がＹ方向に移動される。このようにして、蒸着実行中、常時、基板７と蒸着マスク３とのアライメントが行われ、左右に揺れながら移動する基板７の動きに蒸着マスク３を追従させて蒸着を行うことができる。なお、Ｘ方向に対して左右いずれか一方の撮像手段５によるアライメントが許容値内で実行できない場合には、追従マーク１４の形成不良、又は基板７が許容以上に熱膨張していることが疑われ、このときには、制御手段により上記基板７の番号と不良内容が記録されて、蒸着終了後に不良基板７を取除くことができるようになっている。 The image photographed by the imaging means 5 is subjected to image processing by a control means (not shown), and the center position of the tracking mark 14 and the opening center position of the alignment mark 16 are detected based on the change in luminance in the Y direction. A positional deviation amount is calculated. Next, the alignment means 6 is driven, and the vapor deposition mask 3 is moved in the Y direction so that the positional deviation amount is within an allowable value. In this manner, the alignment between the substrate 7 and the vapor deposition mask 3 is always performed during the vapor deposition, and the vapor deposition mask 3 can follow the movement of the substrate 7 that moves while swinging left and right. If alignment by either the left or right imaging unit 5 with respect to the X direction cannot be performed within an allowable value, it is suspected that the follow-up mark 14 is not formed correctly or that the substrate 7 is thermally expanded beyond the allowable value. At this time, the number of the substrate 7 and the content of the defect are recorded by the control means so that the defective substrate 7 can be removed after the deposition is completed.
続いて、基板７が搬送されて蒸着マスク３の上方に達すると、蒸着源４のシャッタ１９が一定時間開かれ、ルツボ１７から蒸発したＲ有機ＥＬ層用の蒸着材料が蒸着マスク３の開口１５を介して基板７上に付着する。こうして、基板７を搬送しながら基板７全面に渡って蒸着が行われ、Ｒ対応アノード電極２３の列上のパターン形成領域１３にストライプ状のＲ有機ＥＬ層が形成される。 Subsequently, when the substrate 7 is conveyed and reaches above the vapor deposition mask 3, the shutter 19 of the vapor deposition source 4 is opened for a certain time, and the vapor deposition material for the R organic EL layer evaporated from the crucible 17 is opened in the vapor deposition mask 3. It adheres on the substrate 7 via Thus, vapor deposition is performed over the entire surface of the substrate 7 while transporting the substrate 7, and a stripe-shaped R organic EL layer is formed in the pattern formation region 13 on the row of the R corresponding anode electrodes 23.
蒸着が終了した基板７は、搬送手段１によってさらに後方まで搬送され、除荷位置において停止する。そして、この除荷位置において、基板ホルダー２が図５（ａ）に示すように搬送手段１側の一端部２ａを中心に矢印Ｂ方向に１８０度回動して基板７を上向きにし、この状態で保持面２ｂに対する直流電圧の印加及び電磁石２２の駆動が解除される。その後、搬出ロボットによって基板７は、真空室外に搬出される。 The substrate 7 on which vapor deposition has been completed is transported further rearward by the transport means 1 and stops at the unloading position. At this unloading position, the substrate holder 2 is rotated 180 degrees in the direction of arrow B about the one end 2a on the conveying means 1 side as shown in FIG. Thus, the application of the DC voltage to the holding surface 2b and the driving of the electromagnet 22 are released. Thereafter, the substrate 7 is carried out of the vacuum chamber by the carry-out robot.
基板７が搬出されて空となった基板ホルダー２は、図５（ｂ）に示すように搬送手段１側の一端部２ａを中心に矢印Ｃ方向に回動して保持面２ｂを下向きにした状態で搬送手段１の復路を通ってスタート位置まで戻され、再び、初期状態に戻る。 As shown in FIG. 5 (b), the substrate holder 2, which has been emptied after the substrate 7 is unloaded, rotates around the one end 2a on the conveying means 1 side in the direction of the arrow C so that the holding surface 2b faces downward. In this state, it returns to the start position through the return path of the conveying means 1 and returns to the initial state again.
なお、搬送手段１に複数の基板ホルダー２を備えて随時搬送できるように構成すれば、複数の基板７を連続的に搬送しながら蒸着をすることができ、蒸着工程のタクトを短縮することができる。 If the transport means 1 includes a plurality of substrate holders 2 and can be transported at any time, it is possible to perform deposition while continuously transporting the plurality of substrates 7, thereby shortening the tact time of the deposition process. it can.
また、上記実施形態においては、１回の蒸着工程で有機ＥＬ層が形成されるように説明したが、実際には、有機ＥＬ層は、正孔注入層、正孔輸送層、発光層、電子輸送層等の複数の成膜工程を経て形成される。したがって、有機ＥＬ層は、複数の蒸着装置による複数回の蒸着により形成されることになる。 Moreover, in the said embodiment, although demonstrated so that an organic electroluminescent layer might be formed by one vapor deposition process, an organic electroluminescent layer is actually a positive hole injection layer, a positive hole transport layer, a light emitting layer, an electron. It is formed through a plurality of film forming steps such as a transport layer. Therefore, the organic EL layer is formed by a plurality of times of vapor deposition by a plurality of vapor deposition apparatuses.
この場合、一つの真空室内に複数種の蒸着源４及び対応する蒸着マスク３を基板７の搬送方向に並べて備えれば、１回の蒸着工程でＲ，Ｇ，Ｂ対応の有機ＥＬ層を形成することができる。 In this case, if a plurality of types of vapor deposition sources 4 and corresponding vapor deposition masks 3 are arranged in the conveyance direction of the substrate 7 in one vacuum chamber, an organic EL layer corresponding to R, G, and B is formed in one vapor deposition process. can do.
さらに、上記実施形態においては、アライメントマーク１６及び追従マーク１４が夫々１対設けられている場合について説明したが、本発明はこれに限られず、アライメントマーク１６及び追従マーク１４は、Ｘ方向に平行な一方側の縁部領域に互いに対応して１つ設けられていてもよい。この場合、１台の撮像手段５によりアライメントマーク１６と追従マーク１４とを撮影し、両マークが一定の位置関係を有するようにアライメント手段６により蒸着マスク３をＹ方向に移動させればよい。これにより、Ｙ方向に振れながら搬送される基板７に対して蒸着マスク３を位置合わせすることができる。 Furthermore, in the above-described embodiment, the case where the alignment mark 16 and the tracking mark 14 are provided in a pair has been described. However, the present invention is not limited to this, and the alignment mark 16 and the tracking mark 14 are parallel to the X direction. One edge region may be provided corresponding to each other. In this case, the alignment mark 16 and the tracking mark 14 may be photographed by a single image pickup means 5 and the vapor deposition mask 3 may be moved in the Y direction by the alignment means 6 so that both marks have a certain positional relationship. Thereby, the vapor deposition mask 3 can be aligned with respect to the board | substrate 7 conveyed, swinging in a Y direction.
さらにまた、上記実施形態においては、基板７と蒸着マスク３との位置合わせを蒸着マスク３側を移動させて行う場合について説明したが、本発明はこれに限られず、基板ホルダー２側を移動させてもよい。この場合、アライメント手段６は、基板ホルダー２側に備えられ、蒸着マスク３は別に設けた蒸着マスク３のマスクホルダーに固定的に保持される。 Furthermore, in the above embodiment, the case where the alignment between the substrate 7 and the vapor deposition mask 3 is performed by moving the vapor deposition mask 3 side has been described. However, the present invention is not limited to this, and the substrate holder 2 side is moved. May be. In this case, the alignment means 6 is provided on the substrate holder 2 side, and the vapor deposition mask 3 is fixedly held by the mask holder of the vapor deposition mask 3 provided separately.
そして、上記実施形態においては、基板ホルダー２を一方向に移動しながら蒸着する場合について説明したが、本発明はこれに限られず、基板ホルダー２を固定状態で蒸着するものであっても、二次元平面内を前後左右にステップ移動して蒸着するものであってもよい。この場合、基板ホルダー２を固定状態で蒸着するときには、蒸着マスク３は、基板７と略同じ面積に形成され、基板７上のストライプ状又は矩形状のパターン形成領域に対応してストライプ状又は矩形状の開口が形成されたものが使用される。また、基板ホルダー２をステップ移動させて蒸着するときは、蒸着マスク３は、基板７よりも小さい面積に形成され、基板７上のストライプ状又は矩形状のパターン形成領域に対応してストライプ状又は矩形状の開口が形成されたものが使用される。さらに、この場合、電磁石２２は、基板ホルダー２の保持面２ｂの４つの縁部領域、又はいずれか対向する両端縁部領域に備えられていればよい。また、磁性金属板１０の厚みを基板７と蒸着マスクとの間のギャップと同じ寸法に形成すれば、磁性金属板１０の規定の厚みで上記ギャップを管理することができる。 In the above embodiment, the case where the substrate holder 2 is vapor-deposited while moving in one direction has been described. However, the present invention is not limited to this, and the substrate holder 2 may be vapor-deposited in a fixed state. The deposition may be performed by step-moving back and forth and right and left within the dimension plane. In this case, when the substrate holder 2 is vapor-deposited in a fixed state, the vapor deposition mask 3 is formed in substantially the same area as the substrate 7 and corresponds to the stripe-shaped or rectangular pattern forming region on the substrate 7. A shape in which an opening having a shape is formed is used. Further, when vapor deposition is performed by moving the substrate holder 2 stepwise, the vapor deposition mask 3 is formed in an area smaller than the substrate 7 and is formed in a stripe shape or a rectangular pattern formation region on the substrate 7. A rectangular opening is used. Furthermore, in this case, the electromagnet 22 only needs to be provided in the four edge regions of the holding surface 2b of the substrate holder 2 or in the opposite end edge regions. Moreover, if the thickness of the magnetic metal plate 10 is formed to the same dimension as the gap between the substrate 7 and the vapor deposition mask, the gap can be managed with the prescribed thickness of the magnetic metal plate 10.
１…搬送手段
２…基板ホルダー
２ａ…一端部
２ｂ…保持面
３…蒸着マスク
４…蒸着源
５…撮像手段
６…アライメント手段
７…基板
１０…磁性金属板
１１…開口窓
１４…追従マーク
１５…開口
１６…アライメントマーク
２１…高電圧源
２２…電磁石
1 ... Conveying means 2 ... Substrate holder
2a ... one end
2b : Holding surface 3 ... Deposition mask 4 ... Deposition source 5 ... Imaging means 6 ... Alignment means 7 ... Substrate 10 ... Magnetic metal plate 11 ... Opening window 14 ... Tracking mark 15 ... Opening 16 ... Alignment mark 21 ... High voltage source 22 ... electromagnet
Claims (5)
前記基板ホルダーは、前記基板を保持する保持面の中央領域に設けられた静電チャックと、前記基板の少なくとも両端縁部領域に対応して前記保持面に設けられた磁気チャックとを備え、前記基板を静電吸着すると共に、別に形成して前記基板表面の前記両端縁部領域に設置された磁性金属板を磁気的に吸着して前記基板を保持する構成とされ、前記保持面が上向き状態で前記基板の授受を行い、前記保持面が下向き状態で保持された前記基板を前記蒸着マスクと対向させるように一端部が回動可能に前記搬送手段に支持されていることを特徴とする蒸着装置。 In the vacuum chamber, a vapor deposition source for evaporating the vapor deposition material, a substrate holder for holding the substrate so as to face the vapor deposition source, and a plurality of openings are arranged in correspondence with a plurality of pattern formation regions set in advance on the substrate surface. A vapor deposition mask formed, and a transport unit configured to move the substrate holder in one direction, and vapor deposition material evaporated from the vapor deposition source is vapor deposited on the substrate through an opening of the vapor deposition mask to form the thin film pattern. A vapor deposition apparatus,
The substrate holder includes an electrostatic chuck provided in a central region of a holding surface for holding the substrate, and a magnetic chuck provided on the holding surface corresponding to at least both end edge regions of the substrate, The substrate is electrostatically adsorbed, and is configured to hold the substrate by magnetically adsorbing a magnetic metal plate that is separately formed and installed in the both edge region of the substrate surface, and the holding surface is in an upward state The vapor deposition is characterized in that the substrate is transferred and the one end portion is rotatably supported by the transport means so that the substrate held with the holding surface facing downward is opposed to the vapor deposition mask. apparatus.
前記基板ホルダーを前記蒸着マスクの前記開口の並び方向と交差する方向に一定速度で移動させる搬送手段をさらに備えたことを特徴とする請求項１記載の蒸着装置。 The plurality of openings of the vapor deposition mask are provided side by side at regular intervals,
The vapor deposition apparatus according to claim 1, further comprising transport means for moving the substrate holder at a constant speed in a direction intersecting with the direction in which the openings of the vapor deposition mask are arranged.
前記基板ホルダーと前記蒸着マスクとを相対的に前記基板ホルダーの搬送方向と交差する方向に移動可能なアライメント手段と、
前記磁性金属板の前記開口窓を通して前記基板の前記追従パターンを撮像する撮像手段と、
をさらに備えたことを特徴とする請求項３記載の蒸着装置。 The magnetic metal plate can observe a thin-line following pattern formed in advance in parallel with each other at both end edge regions of the substrate corresponding to both end edge regions parallel to the moving direction of the substrate holder. An open window is provided,
An alignment means capable of relatively moving the substrate holder and the vapor deposition mask in a direction intersecting with the transport direction of the substrate holder;
Imaging means for imaging the tracking pattern of the substrate through the opening window of the magnetic metal plate;
The vapor deposition apparatus according to claim 3, further comprising:
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| JP2011290297A JP5994089B2 (en) | 2011-12-29 | 2011-12-29 | Vapor deposition equipment |
| PCT/JP2012/083147 WO2013094707A1 (en) | 2011-12-22 | 2012-12-20 | Deposition apparatus |
| TW101148927A TW201333234A (en) | 2011-12-22 | 2012-12-21 | Deposition apparatus |
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| JP2015129326A (en) * | 2014-01-07 | 2015-07-16 | 株式会社アルバック | Manufacturing apparatus for organic el device |
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| KR102314423B1 (en) * | 2017-04-25 | 2021-10-19 | 주식회사 원익아이피에스 | Processing gap managing method and substrate processing apparatus performing the same |
| JP6345854B1 (en) * | 2017-09-25 | 2018-06-20 | 株式会社アルバック | Vacuum processing equipment |
| CN109536886A (en) * | 2018-12-17 | 2019-03-29 | 福建华佳彩有限公司 | A kind of evaporation coating device and oled panel evaporation coating method |
| JP7450366B2 (en) * | 2019-11-11 | 2024-03-15 | キヤノントッキ株式会社 | Substrate holding device, substrate processing device, substrate holding method, reversing method, film forming method, electronic device manufacturing method |
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| JPS58126978A (en) * | 1982-01-22 | 1983-07-28 | Hitachi Ltd | Base plate holding device |
| JP3683460B2 (en) * | 2000-02-14 | 2005-08-17 | 住友重機械工業株式会社 | Substrate processing method |
| JP2003073804A (en) * | 2001-08-30 | 2003-03-12 | Sony Corp | Method and device for forming film |
| EP1630260B1 (en) * | 2004-08-20 | 2011-07-13 | JDS Uniphase Inc. | Magnetic latch for a vapour deposition system |
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| KR101001454B1 (en) * | 2009-01-23 | 2010-12-14 | 삼성모바일디스플레이주식회사 | Electrostatic Chuck and Manufacturing Device of Organic Light Emitting Diode Having the Same |
| JP5323581B2 (en) * | 2009-05-08 | 2013-10-23 | 三星ディスプレイ株式會社 | Vapor deposition method and vapor deposition apparatus |
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