JP2020070490A - Adsorption and alignment method, adsorption system, film deposition method, film deposition device, and electronic device manufacturing method - Google Patents

Abstract

To reduce an entire processing time of a film deposition device.SOLUTION: A method for adsorbing and aligning an adsorbed body using an electrostatic chuck according to the present invention includes: a pre-alignment step of adjusting relative misalignment between the electrostatic chuck and a first absorbed body while the first absorbed body is isolated from the electrostatic chuck; a step of adsorbing the first adsorbed body by the electrostatic chuck; an alignment step of adjusting relative misalignment between the first adsorbed body adsorbed by the electrostatic chuck and a second adsorbed body at a position, at which the first and second adsorbed bodies are adjacent to each other from the pre-alignment time; and a step of adsorbing the second adsorbed body whose misalignment to the first adsorbed body is adjusted, by the electrostatic chuck via the first adsorbed body. The alignment step starts while the first adsorbed body is being adsorbed by the electrostatic chuck.SELECTED DRAWING: Figure 6

Description

  The present invention relates to a suction and alignment method, a suction system, a film forming method, a film forming apparatus, and an electronic device manufacturing method.

  In the production of an organic EL display device (organic EL display), when forming an organic light emitting element (organic EL element; OLED) that constitutes the organic EL display device, a vapor deposition material evaporated from an evaporation source of a film forming device is used. An organic material layer or a metal layer is formed by vapor deposition on a substrate through a mask on which a pixel pattern is formed.

  In an upward deposition method (depo-up) film forming apparatus, an evaporation source is provided in a lower portion of a vacuum container of the film forming apparatus, a substrate is arranged in an upper portion of the vacuum container, and vapor deposition is performed on a lower surface of the substrate. In such a vacuum container of an upward deposition type film forming apparatus, since the substrate is held only by the substrate holder at the peripheral portion of the lower surface thereof, the substrate bends due to its own weight, which is one factor that reduces the deposition accuracy. ing. Even in a film forming apparatus of a method other than the upward vapor deposition method, the substrate may be bent due to its own weight.

  As a method for reducing the bending of the substrate due to its own weight, a technique using an electrostatic chuck has been studied. That is, by bending the entire upper surface of the substrate with the electrostatic chuck, the bending of the substrate can be reduced.

  Patent Document 1 (Korean Patent Publication No. 2007-0010723) proposes a technique of attracting a substrate and a mask by an electrostatic chuck.

Korean Patent Publication No. 2007-0010723

  However, in such a method of forming a film by adsorbing and adhering the mask and the substrate to be film-formed using the electrostatic chuck, in the conventional technique including Patent Document 1, the alignment start between the substrate and the mask is started. The timing control has not been fully studied.

  The present invention proceeds to the film formation process in a shorter time by controlling the timing of starting the alignment between the substrate and the mask in consideration of the progress of adsorption of the substrate on the electrostatic chuck, and the overall process time of the apparatus. The purpose is to reduce (Tact time).

An adsorption and alignment method according to an embodiment of the present invention is an adsorption and alignment method for an object to be attracted using an electrostatic chuck, wherein the electrostatic chuck is used when the first object is separated from the electrostatic chuck. A pre-alignment step of adjusting a relative positional deviation between the electric chuck and the first object to be adsorbed, a step of adsorbing the first object to be adsorbed by the electrostatic chuck, and a step of adsorbing the first object to be adsorbed during the pre-alignment. An alignment step of adjusting a relative positional deviation between the first attracted body and the second attracted body attracted by the electrostatic chuck at a position where the body and the second attracted body are close to each other; A step of adsorbing the second object to be adsorbed, the relative position deviation of which is adjusted with respect to the first object to be adsorbed, via the first object to be adsorbed by the electrostatic chuck, Adsorption of the first attaching object member by the chuck, characterized in that the beginning middle of progressing.

  A film forming method according to an embodiment of the present invention is a method for forming a film of an evaporation material on a substrate through a mask. The step of loading the mask into the film forming apparatus and the step of loading the substrate into the film forming apparatus. And the substrate as a first object to be adsorbed and the mask as a second object to be adsorbed on the electrostatic chuck, using the adsorption and alignment method according to the embodiment of the present invention. The step of adjusting the relative displacement of the substrate and adsorbing the substrate, and vaporizing the vapor deposition material while the substrate and the mask are attracted to the electrostatic chuck, and depositing the vapor deposition material on the substrate through the mask. And a step of performing.

  An electronic device manufacturing method according to an embodiment of the present invention is characterized in that an electronic device is manufactured using the film forming method according to the embodiment of the present invention.

  An adsorption system according to an embodiment of the present invention is an adsorption system for adsorbing a first object to be adsorbed and a second object to be adsorbed via the first object to be adsorbed, the electrode system including an electrode unit, An electrostatic chuck for adsorbing the first object to be adsorbed and the second object to be adsorbed via the first object to be adsorbed through control of a voltage applied to the part; Pre-alignment for adjusting the relative positional deviation between the electrostatic chuck and the first attracted body in a state where the first attracted body is separated from the first attracted body, and the first attracted body and the A position adjusting mechanism for performing an alignment for adjusting a relative positional deviation between the first attracted body and the second attracted body at a position where the second attracted body is close to the second attracted body; After the pre-alignment is performed, the electrostatic charge And controlling the position adjustment mechanism as adsorption of the first attaching object member by click initiates the alignment on the way in progress.

  A film forming apparatus according to an embodiment of the present invention is a film forming apparatus for forming a film on a substrate through a mask, and is configured to adsorb a substrate that is a first object to be adsorbed and a mask that is a second object to be adsorbed. And a suction system according to an embodiment of the present invention.

  According to the present invention, by controlling the start timing of the alignment between the substrate and the mask in consideration of the progress of adsorption of the substrate on the electrostatic chuck, the film formation process proceeds in a shorter time, and the entire device The process time (Tact time) can be reduced.

FIG. 1 is a schematic diagram of a part of an electronic device manufacturing apparatus. FIG. 2 is a schematic diagram of a film forming apparatus according to an embodiment of the present invention. 3A to 3C are a conceptual diagram and a schematic diagram of an electrostatic chuck system according to an embodiment of the present invention. 4A to 4I are process diagrams showing a film forming process according to an embodiment of the present invention. 5A and 5B are diagrams showing an example of the alignment mark formed on the substrate, and FIG. 5B is a diagram showing an example of the alignment mark formed on the mask. FIG. 6A to FIG. 6C are process diagrams showing detailed steps of the substrate adsorption sequence on the electrostatic chuck. 7A and 7B are schematic diagrams showing an electronic device.

  Hereinafter, preferred embodiments and examples of the present invention will be described with reference to the drawings. However, the following embodiments and examples merely exemplify preferable configurations of the present invention, and the scope of the present invention is not limited to those configurations. Further, in the following description, the hardware configuration and software configuration of the apparatus, the processing flow, the manufacturing conditions, the dimensions, the material, the shape, etc., unless otherwise specified, limit the scope of the present invention to them. It isn't meant.

  INDUSTRIAL APPLICABILITY The present invention can be applied to an apparatus that deposits various materials on the surface of a substrate to form a film, and can be preferably applied to an apparatus that forms a thin film (material layer) having a desired pattern by vacuum vapor deposition. As the material of the substrate, any material such as glass, a film of a polymer material, and metal can be selected. The substrate may be, for example, a substrate in which a film such as polyimide is laminated on a glass substrate. Further, as the vapor deposition material, any material such as an organic material and a metallic material (metal, metal oxide, etc.) may be selected.

  The technique of the present invention can be applied to a film forming apparatus including a sputtering apparatus and a CVD (Chemical Vapor Deposition) apparatus in addition to the vacuum vapor deposition apparatus described in the following description. Specifically, the technique of the present invention can be applied to an apparatus for manufacturing an organic electronic device (for example, an organic light emitting element, a thin film solar cell), an optical member, or the like. Among them, an apparatus for manufacturing an organic light emitting element, which forms an organic light emitting element by evaporating a vapor deposition material and depositing it on a substrate through a mask, is one of preferable application examples of the present invention.

<Electronic device manufacturing equipment>
FIG. 1 is a plan view schematically showing a partial configuration of an electronic device manufacturing apparatus.
The manufacturing apparatus of FIG. 1 is used for manufacturing a display panel of an organic EL display device for a smartphone, for example. In the case of a display panel for a smartphone, for example, a 4.5th generation substrate (about 700 mm x about 900 mm), a sixth generation full size (about 1500 mm x about 1850 mm) or a half cut size (about 1500 mm x about 925 mm) After forming a film for forming an organic EL element on the substrate, the substrate is cut out to manufacture a plurality of small-sized panels.

An electronic device manufacturing apparatus generally includes a plurality of cluster devices 1 and a relay device that connects the cluster devices.
The cluster apparatus 1 includes a plurality of film forming apparatuses 11 that perform a process (for example, film forming) on a substrate S, a plurality of mask stocking apparatuses 12 that store masks M before and after use, and a transfer chamber 13 arranged in the center thereof. And. As shown in FIG. 1, the transfer chamber 13 is connected to each of the plurality of film forming apparatuses 11 and the mask stock apparatus 12.

  A transfer robot 14 that transfers the substrate and the mask is arranged in the transfer chamber 13. The transfer robot 14 transfers the substrate S from the path chamber 15 of the relay device arranged on the upstream side to the film forming apparatus 11. Further, the transfer robot 14 transfers the mask M between the film forming apparatus 11 and the mask stock apparatus 12. The transfer robot 14 is, for example, a robot having a structure in which a robot hand holding the substrate S or the mask M is attached to an articulated arm.

  In the film forming apparatus 11 (also referred to as a vapor deposition apparatus), a vapor deposition material stored in an evaporation source is heated by a heater to be vaporized and vapor-deposited on a substrate through a mask. A series of film formation processes such as transfer of the substrate S by the transfer robot 14, adjustment of the relative position between the substrate S and the mask M (alignment), fixing of the substrate S on the mask M, film formation (vapor deposition), etc. Performed by the device 11.

In the mask stock device 12, a new mask used in the film forming process in the film forming device 11 and a used mask are separately stored in two cassettes. The transfer robot 14 transfers a used mask from the film forming apparatus 11 to a cassette of the mask stock apparatus 12, and transfers a new mask stored in another cassette of the mask stock apparatus 12 to the film forming apparatus 11.

  The cluster apparatus 1 includes a pass chamber 15 for transmitting the substrate S from the upstream side in the flow direction of the substrate S to the cluster apparatus 1, and a substrate S for which the film forming process is completed by the cluster apparatus 1 on the downstream side. The buffer chamber 16 for connecting to the cluster device is connected. The transfer robot 14 in the transfer chamber 13 receives the substrate S from the upstream pass chamber 15 and transfers it to one of the film forming apparatuses 11 (for example, the film forming apparatus 11 a) in the cluster apparatus 1. In addition, the transfer robot 14 receives the substrate S for which the film forming process is completed in the cluster apparatus 1 from one of the plurality of film forming apparatuses 11 (for example, the film forming apparatus 11b), and the buffer connected to the downstream side. It is transported to the chamber 16.

  A swirl chamber 17 for changing the orientation of the substrate is installed between the buffer chamber 16 and the pass chamber 15. The swirl chamber 17 is provided with a transport robot 18 for receiving the substrate S from the buffer chamber 16, rotating the substrate S by 180 °, and transporting the substrate S to the pass chamber 15. Accordingly, the orientation of the substrate S is the same in the upstream cluster device and the downstream cluster device, and the substrate processing is facilitated.

  The pass chamber 15, the buffer chamber 16, and the swirl chamber 17 are so-called relay devices that connect the cluster devices. The relay device installed on the upstream side and / or the downstream side of the cluster device includes at least one of a pass chamber, a buffer chamber, and a swirl chamber.

  The film forming device 11, the mask stock device 12, the transfer chamber 13, the buffer chamber 16, the swirl chamber 17, and the like are maintained in a high vacuum state during the process of manufacturing the organic light emitting device. The pass chamber 15 is normally maintained in a low vacuum state, but may be maintained in a high vacuum state as needed.

  In the present embodiment, the configuration of the electronic device manufacturing apparatus has been described with reference to FIG. 1. However, the present invention is not limited to this, and other types of apparatuses and chambers may be included. And the arrangement between the chambers may change.

Hereinafter, a specific configuration of the film forming apparatus 11 will be described.
<Film forming device>
FIG. 2 is a schematic diagram showing the configuration of the film forming apparatus 11. In the following description, an XYZ orthogonal coordinate system in which the vertical direction is the Z direction will be used. When the substrate S is fixed so as to be parallel to the horizontal plane (XY plane) during film formation, the lateral direction (direction parallel to the short side) of the substrate S is defined as the X direction, and the longitudinal direction (direction parallel to the long side). The direction is Y. Further, the rotation angle around the Z axis is represented by θ.

  The film forming apparatus 11 includes a vacuum container 21 maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen gas, a substrate support unit 22, a mask support unit 23, and an electrostatic chuck provided inside the vacuum container 21. 24 and an evaporation source 25.

The substrate support unit 22 is means for receiving and holding the substrate S transported by the transport robot 14 provided in the transport chamber 13, and is also called a substrate holder.
A mask support unit 23 is provided below the substrate support unit 22. The mask support unit 23 is means for receiving and holding the mask M carried by the carrying robot 14 provided in the carrying chamber 13, and is also called a mask holder.
The mask M has an opening pattern corresponding to the thin film pattern formed on the substrate S, and is placed on the mask support unit 23. In particular, a mask used for manufacturing an organic EL element for a smartphone is a metal mask having a fine opening pattern formed thereon and is also called an FMM (Fine Metal Mask).

Above the substrate support unit 22, an electrostatic chuck 24 for attracting and fixing the substrate by electrostatic attraction is provided. The electrostatic chuck 24 has a structure in which an electric circuit such as a metal electrode is embedded in a dielectric (for example, ceramic material) matrix. The electrostatic chuck 24 is preferably a gradient force type electrostatic chuck. Since the electrostatic chuck 24 is a gradient force type electrostatic chuck, even when the substrate S is an insulating substrate, the electrostatic chuck 24 can favorably attract the substrate S. However, the electrostatic chuck 24 may be a Coulomb force type electrostatic chuck. In the case where the electrostatic chuck 24 is a Coulomb force type electrostatic chuck, when positive (+) and negative (-) voltages are applied to the metal electrode, the attracted object such as the substrate S is applied through the dielectric matrix. A polarized charge having the opposite polarity to that of the metal electrode is induced, and the substrate S is attracted and fixed to the electrostatic chuck 24 by the electrostatic attraction between them. Further, the electrostatic chuck 24 may be a Johnson-Rahbek force type electrostatic chuck.

  The electrostatic chuck 24 may be formed of one plate or may be formed to have a plurality of sub plates. Further, even when it is formed by one plate, a plurality of electric circuits may be included in the inside thereof, and the electrostatic attraction may be controlled so as to be different depending on the position in one plate.

  In this embodiment, as will be described later, not only the substrate S (first object to be adsorbed) but also the mask M (second object to be adsorbed) is adsorbed and held by the electrostatic chuck 24 before film formation. After that, film formation is performed with the electrostatic chuck 24 holding the substrate S (first object to be adsorbed) and the mask M (second object to be adsorbed), and after the film formation is completed, the substrate S (first object to be adsorbed) is formed. The holding by the electrostatic chuck 24 with respect to the body) and the mask M (second attracted body) is released.

  That is, in this embodiment, the substrate S (first attracted body) placed on the lower side in the vertical direction of the electrostatic chuck 24 is attracted and held by the electrostatic chuck, and then the substrate S (first attracted body). ), The mask M (second object to be adsorbed) placed on the opposite side of the electrostatic chuck 24 is adsorbed and held by the electrostatic chuck 24 via the substrate S (first object to be adsorbed). Then, after film formation is performed with the substrate S (first object to be adsorbed) and the mask M (second object to be adsorbed) held by the electrostatic chuck 24, the substrate S (first object to be adsorbed) and the mask are formed. The M (second object to be attracted) is separated from the electrostatic chuck 24.

  Although not shown in FIG. 2, an organic material deposited on the substrate S is provided by providing a cooling mechanism (for example, a cooling plate) for suppressing the temperature rise of the substrate S on the side opposite to the attraction surface of the electrostatic chuck 24. It may be configured to suppress the deterioration and deterioration of

  The evaporation source 25 is a crucible (not shown) in which an evaporation material to be deposited on the substrate is stored, a heater (not shown) for heating the crucible, and the evaporation material from the evaporation source is a substrate until the evaporation rate becomes constant. It includes a shutter (not shown) and the like that prevent the particles from scattering. The evaporation source 25 may have various configurations such as a point evaporation source and a linear evaporation source according to the application.

Although not shown in FIG. 2, the film forming apparatus 11 includes a film thickness monitor (not shown) and a film thickness calculation unit (not shown) for measuring the thickness of the film deposited on the substrate.
A substrate Z actuator 26, a mask Z actuator 27, an electrostatic chuck Z actuator 28, a position adjusting mechanism 29 and the like are provided outside the upper part (atmosphere side) of the vacuum container 21. These actuators and position adjusting mechanisms are composed of, for example, a motor and a ball screw, or a motor and a linear guide. The substrate Z actuator 26 is a drive unit for moving the substrate support unit 22 up and down (moving in the Z direction). The mask Z actuator 27 is a drive unit for moving the mask support unit 23 up and down (moving in the Z direction). The electrostatic chuck Z actuator 28 is a drive unit for moving the electrostatic chuck 24 up and down (moving in the Z direction).

  The position adjusting mechanism 29 is a driving unit for adjusting (aligning) the positional deviation between the electrostatic chuck 24 and the substrate S and / or the substrate S and the mask M. In other words, the position adjusting mechanism 29 makes the electrostatic chuck 24 relative to the substrate supporting unit 22 and the mask supporting unit 23 in at least one of the X direction, the Y direction, and the θ direction in a plane parallel to the horizontal plane. It is a horizontal drive mechanism for moving / rotating mechanically. In the present embodiment, the position adjusting mechanism is configured so as to restrict the movement of the substrate supporting unit 22 and the mask supporting unit 23 in the horizontal plane and move the electrostatic chuck 24 in the X, Y, and θ directions. .. However, the present invention is not limited to this, and the position adjustment mechanism is configured so as to regulate the horizontal movement of the electrostatic chuck 24 and move the substrate support unit 22 and the mask support unit 23 in the XYθ directions. Good.

  On the outer upper surface of the vacuum container 21, in addition to the above-described drive mechanism, for alignment to image the alignment marks formed on the substrate S and the mask M through a transparent window provided on the upper surface of the vacuum container 21. Cameras 20a and 20b are installed. By recognizing the alignment mark on the substrate S and the alignment mark on the mask M from the images photographed by the alignment cameras 20a and 20b, it is possible to measure the respective XY position and the relative deviation in the XY plane.

  The alignment between the substrate S and the mask M is the first alignment (also referred to as “rough alignment”), which is a first position adjustment process for roughly aligning, and the first alignment for performing highly accurate alignment. It can be performed by a two-step alignment of a second alignment (also referred to as "fine alignment") which is a two-position adjustment process. In this case, it is preferable to use two types of cameras, that is, a low-resolution but wide-field first alignment camera 20a and a narrow-field but high-resolution second alignment camera 20b. With respect to each of the substrate S and the mask M, the alignment marks provided at two locations on the pair of opposing sides are measured by the two first alignment cameras 20a, and the alignment marks provided at the four corners of the substrate S and the mask M are measured. Is measured by four second alignment cameras 20b. The number of the alignment marks and the cameras for measuring the alignment marks are not particularly limited. For example, in the case of fine alignment, the marks attached to the two opposite corners of the substrate S and the mask M may be measured by two cameras. good.

  On the other hand, as will be described later, in the case where pre-alignment for adjusting the relative positional deviation between the electrostatic chuck 24 and the substrate S in advance is performed before the substrate S is attracted to the electrostatic chuck 24, the electrostatic chuck 24 In the above-described positional alignment (alignment) between the substrate S and the mask M performed after the substrate is attracted to the substrate, the rough alignment step may be omitted and the fine alignment may be immediately performed.

  In the embodiment of the present invention, according to the latter configuration, the relative positional deviation between the substrate S and the electrostatic chuck 24 is adjusted through pre-alignment, and then the substrate S is attracted to the electrostatic chuck 24, and the electrostatic chuck 24 A description will be given on the premise that the position alignment between the substrate S and the mask M is performed only by the fine alignment process after the substrate suction onto the substrate proceeds. Detailed steps from pre-alignment to film formation will be described later.

The film forming apparatus 11 includes a control unit (not shown). The control unit has functions of carrying and aligning the substrate S, controlling the evaporation source 25, controlling film formation, and the like. The control unit can be configured by a computer having a processor, a memory, a storage, an I / O, etc., for example. In this case, the function of the control unit is realized by the processor executing the program stored in the memory or the storage. A general-purpose personal computer may be used as the computer, and a built-in computer or PLC (program
Able logic controller) may be used. Alternatively, some or all of the functions of the control unit may be configured by a circuit such as an ASIC or FPGA. Further, a control unit may be installed for each film forming apparatus, and one control unit may be configured to control a plurality of film forming apparatuses.

<Electrostatic chuck system>
The electrostatic chuck system 30 according to the present embodiment will be described with reference to FIGS. 3A to 3C. 3A is a conceptual block diagram of the electrostatic chuck system 30 of the present embodiment, FIG. 3B is a schematic sectional view of the electrostatic chuck 24, and FIG. FIG. 4 is a schematic plan view of the electrostatic chuck 24.

The electrostatic chuck system 30 of the present embodiment includes an electrostatic chuck 24, a voltage application unit 31, and a voltage control unit 32, as shown in FIG.
The voltage application unit 31 applies a voltage for generating an electrostatic attractive force to the electrode unit of the electrostatic chuck 24.
The voltage control unit 32 determines the magnitude of the voltage applied to the electrode unit by the voltage application unit 31 according to the progress of the adsorption process of the electrostatic chuck system 30 or the film forming process of the film forming apparatus 11, the time when the voltage application starts, The voltage maintenance time, the voltage application order, etc. are controlled. For example, the voltage control unit 32 can independently control the voltage application to the plurality of sub electrode units 241 to 249 included in the electrode unit of the electrostatic chuck 24 for each sub electrode unit. In the present embodiment, the voltage control unit 32 is provided separately from the control unit of the film forming apparatus 11, but the present invention is not limited to this, and the voltage control unit 32 may be integrated with the control unit of the film forming apparatus 11. Good.

The electrostatic chuck 24 includes an electrode unit that generates an electrostatic attraction force for attracting an object to be attracted (for example, the substrate S and the mask M) to the attraction surface, and the electrode unit includes a plurality of sub-electrode units 241 to 249. Can be included. For example, in the electrostatic chuck 24 of the present embodiment, as shown in FIG. 3C, the longitudinal direction (Y direction) of the electrostatic chuck 24 and / or the lateral direction (X direction) of the electrostatic chuck 24. A plurality of divided sub-electrode portions 241 to 249 are included along the line.
Each sub-electrode unit includes an electrode pair 33 to which positive (first polarity) and negative (second polarity) voltages are applied to generate an electrostatic attraction force. For example, each electrode pair 33 includes a first electrode 331 to which a voltage forming a positive potential is applied and a second electrode 332 to which a voltage forming a negative potential is applied.

  The first electrode 331 and the second electrode 332 each have a comb shape, as shown in FIG. For example, each of the first electrode 331 and the second electrode 332 includes a plurality of comb tooth portions and a base portion connected to the plurality of comb tooth portions. The base of each of the electrodes 331 and 332 supplies a potential to the comb tooth portion, and the plurality of comb tooth portions generate an electrostatic attraction force between the comb tooth portions and the object to be attracted. In one sub-electrode portion, the comb-teeth portions of the first electrode 331 are alternately arranged so as to face the comb-teeth portions of the second electrode 332. As described above, the comb teeth of the electrodes 331 and 332 face each other and are intricate with each other, so that the interval between the electrodes to which different voltages are applied can be narrowed and a large non-uniform electric field is formed. Then, the substrate S can be attracted by the gradient force.

  Although the electrodes 331 and 332 of the sub-electrode portions 241 to 249 of the electrostatic chuck 24 have a comb shape in the present embodiment, the present invention is not limited to this, and the electrostatic attraction between the electrodes is performed. It can have various shapes as long as it can generate an attractive force.

  The electrostatic chuck 24 of the present embodiment has a plurality of adsorption parts corresponding to a plurality of sub-electrode parts. For example, as shown in FIG. 3C, the electrostatic chuck 24 of the present embodiment has nine attraction portions corresponding to the nine sub-electrode portions 241-249, but is not limited to this, and the substrate S In order to more precisely control the adsorption of the, the other number of adsorption parts may be provided.

  The plurality of adsorption parts may be realized by physically having one plate having a plurality of electrode portions, and each of the physically divided plurality of plates having one or more electrode portions. It may be embodied. In the embodiment shown in FIG. 3C, each of the plurality of suction portions may be configured to correspond to each of the plurality of sub electrode portions, and one suction portion includes a plurality of sub electrode portions. You can be done.

  Further, for example, by controlling the application of the voltage to the sub electrode portions 241 to 249 by the voltage control unit 32, the substrate S is arranged in a direction (Y direction) intersecting with the suction advancing direction (X direction), as described later. The three sub-electrode parts 241, 244, and 247 thus formed may form one adsorption part. That is, each of the three sub electrode portions 241, 244, 247 can independently control the voltage, but by controlling the voltage to be simultaneously applied to these three electrode portions 241, 244, 247, These three electrode parts 241, 244, 247 can function as one adsorption part. The specific physical structure and electric circuit structure may be changed as long as the suction of the substrate can be performed independently on each of the plurality of suction units.

<Alignment method and film forming process>
Hereinafter, with reference to FIG. 4, a series of steps from the loading of the substrate S and the mask M into the film forming apparatus 11 to the film formation through alignment will be described.

  The mask M is carried into the vacuum container 21 and placed on the mask support unit 23 (FIG. 4A). Subsequently, the substrate S on which the vapor deposition material is formed using the mask M is carried into the vacuum container 21 and placed on the supporting portion of the substrate supporting unit 22 (FIG. 4B).

In this state, before the substrate S is attracted to the electrostatic chuck 24, alignment for adjusting the positional deviation between the electrostatic chuck 24 and the substrate S placed on the substrate support unit 22 is performed (see FIG. )). That is, when the substrate S is loaded by the transport robot 14, the relative position between the electrostatic chuck 24 and the substrate S may be displaced due to a transport error or the like. After adjusting the relative displacement of the substrate, the substrate S is attracted to the electrostatic chuck 24. The alignment of the substrate S with respect to the electrostatic chuck 24, which is performed prior to the positional alignment (alignment) between the substrate S, which is a film formation target, and the mask M is referred to as “pre-alignment”.

In the pre-alignment step of the substrate S, for example, the corner portion of the rectangular electrostatic chuck 24 and the alignment mark formed on the substrate S are photographed by the alignment camera, and the relative position shift of the substrate S with respect to the electrostatic chuck 24 is detected. Measure the quantity. Alternatively, an electrostatic chuck alignment mark may be formed on both the electrostatic chuck 24 side and a corner portion, and this may be photographed together with the substrate alignment mark to measure the relative positional deviation amount. The cameras for alignment in the pre-alignment step may be the cameras 20a and 20b, or a camera for pre-alignment may be installed.
When it is determined that the relative position between the electrostatic chuck 24 and the substrate S is deviated, the position adjusting mechanism 29 described above is driven in the horizontal direction (XYθ direction) to move the electrostatic chuck 24 and the substrate S in the horizontal direction (XYθ direction). Adjust the relative position. As described above, the position adjustment by the position adjusting mechanism 29 may be a method of moving the electrostatic chuck 24 in the XYθ directions with respect to the substrate supporting unit 22 whose movement in the horizontal direction is restricted. A method of restricting the movement of the chuck 24 in the horizontal direction and moving the substrate support unit 22 in the XYθ directions may be used.

When the position adjustment (substrate pre-alignment) of the substrate S with respect to the electrostatic chuck 24 is completed, the electrostatic chuck 24 is lowered by the electrostatic chuck Z actuator 28 as shown in FIG. A predetermined voltage (ΔV1) is applied to the substrate S to attract the substrate S to the electrostatic chuck 24.

  Subsequently, while the adsorption of the substrate S to the electrostatic chuck 24 progresses, as shown in FIGS. 4E to 4G, the positional alignment between the substrate S as the film formation target and the mask M ( Perform alignment). The alignment between the substrate S and the mask M can be basically performed in two steps. Therefore, as shown in FIG. 5, alignment marks are formed on the substrate S and the mask M at predetermined positions.

  First, as shown in FIG. 4E, when the substrate S is separated from the mask M, the first alignment marks (Psr, Pmr; see FIG. 5) formed on the substrate S and the mask M respectively are Rough alignment (first alignment) in which the relative position between the substrate S and the mask M in the XY plane (direction parallel to the surface of the mask M) is roughly captured based on the captured image by the 1 alignment camera (20a). )I do. The camera 20a used for rough alignment is a low-resolution camera with a wide field of view so that rough alignment can be performed. The first alignment marks (Psr, Pmr) and the camera 20a for photographing the first alignment marks (Psr, Pmr) are installed at positions corresponding to the centers of the short sides of the substrate S and the mask M.

  When the rough alignment is completed, the electrostatic chuck Z actuator 28 is driven to lower the substrate S attracted to the electrostatic chuck 24 to the mask M side (FIG. 4 (f)). At this time, the substrate Z actuator 26 causes the substrate support unit 22 to be lowered together with the lowering of the electrostatic chuck 24.

With the substrate S attracted to the electrostatic chuck 24 lowered to the measurement position where the fine alignment as the second alignment step can be performed, the substrate S and the mask are masked by the second alignment camera (fine alignment camera; 20b). The second alignment marks (Psf, Pmf; see FIG. 5) respectively formed on M are photographed and the relative positional deviation is adjusted (FIG. 4 (g)). The camera 20b used for fine alignment is a camera with a narrow field of view and high resolution so that highly accurate alignment can be performed. The second alignment marks (Psf, Pmf) and the camera 20b for photographing the second alignment marks (Psf, Pmf) are installed at positions corresponding to roughly four corners of the substrate S and the mask M.
The measurement position for performing the fine alignment can be set at a position where the substrate S is sufficiently close to the mask M, and for example, can be set at a position where the lowermost end of the substrate S is partially in contact with the mask M. it can.

  As described above, the alignment between the substrate S and the mask M, which is performed after the substrate is attracted to the electrostatic chuck 24, is performed in two steps: rough alignment which is a rough alignment process and fine alignment which is a highly accurate alignment process. Can be implemented in. However, as described above, when pre-alignment for adjusting the relative positional deviation between the electrostatic chuck 24 and the substrate S in advance is performed before the substrate S is attracted to the electrostatic chuck 24, the electrostatic chuck 24 In the alignment between the substrate S and the mask M performed after the substrate suction to the substrate is started, the rough alignment step may be omitted and the positional alignment may be performed only by the fine alignment step. That is, in the embodiment of the present invention, in the steps of FIGS. 4A to 4G described above, the substrate pre-alignment of FIG. 4C is performed before the substrate S is attracted by the electrostatic chuck 24. As a premise, the rough alignment process shown in FIG. 4E, which is performed after the substrate suction is started, is skipped, and the fine alignment process shown in FIGS. 4F and 4G is immediately performed. It is possible to further shorten the time required for.

In this way, when all the alignment is completed and the relative positional deviation between the substrate S and the mask M falls within the threshold value, the electrostatic chuck Z actuator 28 is driven downward as shown in FIG. The attracted substrate S is placed on the mask M, and then a predetermined voltage (ΔV2) is applied to the electrostatic chuck 24 to pull the mask M toward the substrate side to attract the substrate S and the mask M. Make them stick together.

  When the alignment and bonding between the substrate M and the mask S are completed through the above process, the shutter of the evaporation source 25 is opened, and the vapor deposition material evaporated from the evaporation source 25 is transferred onto the film formation surface of the substrate through the mask. (FIG. 4 (i)).

<Application of substrate adsorption voltage to the electrostatic chuck 24 and control of alignment start timing>
The present invention is characterized in that in the film forming process described above, the alignment for adjusting the relative positional deviation between the substrate S and the mask M is started while the substrate S is attracted to the electrostatic chuck 24. And Hereinafter, this will be described in detail. FIG. 6 illustrates the detailed process of adsorbing the substrate S on the electrostatic chuck 24 in FIG. 4D.

  In the present embodiment, the entire surface of the substrate S is not attracted to the lower surface of the electrostatic chuck 24 at the same time, but as shown in FIG. Adsorption of the substrate S is sequentially advanced toward the corner portion.

In order to realize this, the order in which the first voltage for substrate adsorption is applied to the plurality of sub electrode portions 241 to 249 of the electrostatic chuck 24 may be controlled, and the plurality of sub electrode portions 241 to 249 may be controlled. At the same time, the first voltage is applied, but the structure and supporting force of the supporting portion of the substrate supporting unit 22 that supports the substrate S may be different.
FIG. 6 shows an embodiment in which the substrate S is sequentially attracted to the electrostatic chuck 24 by controlling the voltage applied to the plurality of sub electrode portions 241 to 249 of the electrostatic chuck 24.

  Here, the sub-electrode part 247 arranged at one corner part of the electrostatic chuck 24 forms a first adsorption part (1), and the first adsorption part is formed in a direction from the one corner part to another corner part on a diagonal line. The two sub-electrode portions 244 and 248 arranged adjacent to the above portion form the second adsorption portion (2), and subsequently, three sub-electrode portions arranged adjacent to the second adsorption portion in the direction of the other corner portion. The sub-electrode parts 241, 245, 249 form a third adsorption part (3), and the two sub-electrode parts 242, 246 arranged adjacent to the third adsorption part form a fourth adsorption part (4), Finally, description will be made on the premise that the sub electrode portion 243 arranged on the side of the other corner portion forms the fifth adsorption portion (5).

  When the substrate S is loaded into the vacuum container 21 of the film forming apparatus 11 and placed on the supporting portion of the substrate supporting unit 22, and the electrostatic chuck 24 is lowered to a position where it is sufficiently close to or in contact with the substrate S, the voltage control unit. The reference numeral 32 designates a second suction portion (2), a third suction portion (3), a third suction portion (3), and a third suction portion (3) in a direction from one corner portion where the first suction portion (1) of the electrostatic chuck 24 is located to the other corner portion on a diagonal line. The substrate adsorption voltage (first voltage; ΔV1) is controlled to be sequentially applied in the order of the fourth adsorption portion (4) and the fifth adsorption portion (5).

  In FIG. 6, for the sake of convenience, an intermediate step in which the substrate adsorption voltage is applied to the second adsorption portion (2) and the fourth adsorption portion (4) is omitted, and the first voltage is applied to the first adsorption portion (1) first. The state where (ΔV1) is applied is shown in FIG. 6A, and then, the third adsorption portion (3) which is a region corresponding to approximately half of the substrate S in the direction from one corner portion to the other corner portion on the diagonal line. FIG. 6B shows a state in which the first voltage (ΔV1) is applied to the second end, and a state in which the first voltage (ΔV1) is finally applied to the fifth adsorption portion (5) which is another corner portion on the diagonal line. Is shown in FIG. The first voltage (ΔV1) is set to a voltage large enough to surely attract the substrate S to the electrostatic chuck 24.

As a result, when the substrate S is attracted to the electrostatic chuck 24, the attraction is started from one corner portion of the substrate S corresponding to the first attracting portion (1), and the fifth portion is passed through the central portion of the substrate S. Adsorption proceeds toward the other corner portion corresponding to the adsorption portion (5).
Each right side view of FIG. 6 is a top view (top view seen from the electrostatic chuck 24) conceptually showing the adsorption state of the substrate S at each of the above voltage application stages. The adsorption area of the substrate at each stage is indicated by diagonal lines.

With such an adsorption method, the substrate S is evenly attracted to the electrostatic chuck 24 without leaving a wrinkle in the central portion.
According to the present invention, in order to prevent wrinkles, the substrate S is sequentially attracted to the electrostatic chuck 24 from one corner portion toward the other corner portion in the diagonal direction as described above. , Alignment for adjusting the relative displacement between the substrate S and the mask M is started. That is, the suction is performed in the direction from one corner of the substrate S toward the other corner on the diagonal line, and the suction is performed up to the region of the third suction portion (3) corresponding to approximately half of the substrate S (FIG. 6). At the point of time b), fine alignment between the substrate S and the mask M described in FIGS. 4F and 4G is started.

  As described above, the fine alignment mark (Psf) on the substrate and the camera 20b for capturing the fine alignment mark (Psf) are installed at the positions corresponding to the four corners of the substrate S. 6B when the suction is performed in the direction from the edge portion to the other corner portion on the diagonal line and the suction is performed up to the area of the third suction portion (3) corresponding to approximately half of the substrate S. The positions of the fine alignment marks (Psf) formed at the three corners on the substrate S, which are required at the time of alignment, are fixed by suction, and the positions of these fine alignment marks (Psf) during the remaining suction process thereafter. Does not change. Therefore, if the fine alignment operation is started at the time of FIG. 6B where the fine alignment marks (Psf) at the three corners, which are required for fine alignment, are fixed by suction, the alignment accuracy does not decrease. Therefore, the start time of alignment can be advanced. Therefore, it is possible to proceed to the film forming process within a shorter time, and it is possible to reduce the overall process time (Tact time) of the apparatus.

  In short, in the present invention, the adsorption of the substrate S to the electrostatic chuck 24 is not performed by the usual method in which the alignment between the substrate S and the mask M is performed after the entire surface of the substrate S is completely adsorbed by the electrostatic chuck 24. While controlling so as to be sequentially performed along a predetermined direction, the attraction to the electrostatic chuck 24 is performed by utilizing the mutual relationship between the attraction progress direction and the formation position of the alignment mark formed on the substrate. The feature is that alignment is started in the middle of being called.

<Electronic device manufacturing method>
Next, an example of a method for manufacturing an electronic device using the film forming apparatus of this embodiment will be described. Hereinafter, a configuration and a manufacturing method of an organic EL display device will be illustrated as an example of an electronic device.
First, the organic EL display device to be manufactured will be described. 7A shows an overall view of the organic EL display device 60, and FIG. 7B shows a sectional structure of one pixel.

As shown in FIG. 7A, in the display area 61 of the organic EL display device 60, a plurality of pixels 62 including a plurality of light emitting elements are arranged in a matrix. Although details will be described later, each of the light emitting elements has a structure including an organic layer sandwiched between a pair of electrodes. It should be noted that the pixel here refers to a minimum unit that enables display of a desired color in the display area 61. In the case of the organic EL display device according to the present embodiment, the pixel 62 is configured by a combination of the first light emitting element 62R, the second light emitting element 62G, and the third light emitting element 62B which emit different lights. The pixel 62 is often composed of a combination of a red light emitting element, a green light emitting element, and a blue light emitting element, but may be a combination of a yellow light emitting element, a cyan light emitting element, and a white light emitting element. It is not limited.

  FIG. 7B is a schematic partial cross-sectional view taken along the line AB of FIG. The pixel 62 has an organic EL device including an anode 64, a hole transport layer 65, any one of the light emitting layers 66R, 66G, and 66B, an electron transport layer 67, and a cathode 68 on a substrate 63. There is. Among these, the hole transport layer 65, the light emitting layers 66R, 66G, 66B, and the electron transport layer 67 correspond to the organic layers. In the present embodiment, the light emitting layer 66R is an organic EL layer that emits red, the light emitting layer 66G is an organic EL layer that emits green, and the light emitting layer 66B is an organic EL layer that emits blue. The light-emitting layers 66R, 66G, and 66B are formed in patterns corresponding to light-emitting elements that emit red, green, and blue (sometimes described as organic EL elements). Further, the anode 64 is formed separately for each light emitting element. The hole transport layer 65, the electron transport layer 67, and the cathode 68 may be formed commonly to the plurality of light emitting elements 62R, 62G, and 62B, or may be formed for each light emitting element. An insulating layer 69 is provided between the anodes 64 to prevent the anodes 64 and the cathodes 68 from being short-circuited by foreign matter. Furthermore, since the organic EL layer is deteriorated by water and oxygen, a protective layer 70 is provided to protect the organic EL element from water and oxygen.

  Although the hole transport layer 65 and the electron transport layer 67 are shown as one layer in FIG. 7B, they are formed as a plurality of layers including a hole block layer and an electron block layer depending on the structure of the organic EL display element. May be done. Further, between the anode 64 and the hole transport layer 65, a hole injection layer having an energy band structure capable of smoothly injecting holes from the anode 64 to the hole transport layer 65 is provided. It can also be formed. Similarly, an electron injection layer may be formed between the cathode 68 and the electron transport layer 67.

Next, an example of the method for manufacturing the organic EL display device will be specifically described.
First, a circuit 63 (not shown) for driving the organic EL display device and the substrate 63 on which the anode 64 is formed are prepared.

An acrylic resin is formed by spin coating on the substrate 63 on which the anode 64 is formed, and the acrylic resin is patterned by a lithography method so that an opening is formed in a portion where the anode 64 is formed, and an insulating layer 69 is formed. .. This opening corresponds to a light emitting region where the light emitting element actually emits light.
The substrate 63 on which the insulating layer 69 is patterned is carried into the first organic material film forming apparatus, the substrate is held by the substrate holding unit and the electrostatic chuck, and the hole transport layer 65 is placed on the anode 64 in the display area. It is formed as a layer common to the above. The hole transport layer 65 is formed by vacuum vapor deposition. Since the hole transport layer 65 is actually formed to have a size larger than that of the display region 61, a high-definition mask is unnecessary.

Next, the substrate 63 on which the hole transport layer 65 has been formed is carried into the second organic material film forming apparatus and held by the substrate holding unit and the electrostatic chuck. The substrate and the mask are aligned, the substrate is placed on the mask, and the light emitting layer 66R that emits red light is formed on the portion of the substrate 63 where the element that emits red light is arranged.
Similar to the film formation of the light emitting layer 66R, the light emitting layer 66G emitting green is formed by the third organic material film forming apparatus, and the light emitting layer 66B emitting blue is formed by the fourth organic material film forming apparatus. .. After the film formation of the light emitting layers 66R, 66G, 66B is completed, the electron transport layer 67 is formed over the entire display region 61 by the fifth film forming apparatus. The electron transport layer 67 is formed as a layer common to the three color light emitting layers 66R, 66G, and 66B.
The substrate on which the electron transport layer 67 has been formed is moved by a metal vapor deposition material film forming apparatus to form the cathode 68.

According to the present invention, when each organic layer or metal electrode layer of such an organic EL display element is formed, the alignment between the substrate S and the mask M, which is a film formation target, is performed by the substrate S relative to the electrostatic chuck 24. By starting the process during the adsorption, the film formation process can be proceeded in a shorter time, and the overall process time (Tact time) of the apparatus can be reduced.

After that, the organic EL display device 60 is completed by moving to a plasma CVD device to form a protective layer 70.
If the substrate 63 on which the insulating layer 69 is patterned is carried into the film forming apparatus until the film formation of the protective layer 70 is completed, if the substrate 63 is exposed to an atmosphere containing water and oxygen, the light emitting layer made of an organic EL material will be formed. It may be deteriorated by water or oxygen. Therefore, in this example, the loading and unloading of the substrate between the film forming apparatuses is performed in a vacuum atmosphere or an inert gas atmosphere.

  The above-mentioned embodiment shows an example of the present invention, and the present invention is not limited to the configuration of the above-mentioned embodiment and may be appropriately modified within the scope of the technical idea thereof.

11: Film forming device 20a, 20b: Alignment camera Psr, Pmr, Psf, Pmf: Alignment mark 22: Substrate support unit 23: Mask support unit 24: Electrostatic chuck

Claims (13)

A method of attracting and aligning an object to be attracted using an electrostatic chuck, comprising:
A pre-alignment step of adjusting a relative positional deviation between the electrostatic chuck and the first attracted body in a state where the first attracted body is separated from the electrostatic chuck;
Attracting the first object to be attracted by the electrostatic chuck,
A relative position between the first attracted body and the second attracted body that are attracted by the electrostatic chuck at a position where the first attracted body and the second attracted body are closer to each other than during the pre-alignment. An alignment stage to adjust the misalignment,
Adsorbing the second object to be adsorbed, the relative position deviation of which is adjusted with respect to the first object to be adsorbed, via the first object to be adsorbed by the electrostatic chuck;
Including,
The attraction and alignment method, wherein the alignment step is started during the attraction of the first object to be attracted by the electrostatic chuck. In the step of adsorbing the first object to be adsorbed, the first object to be adsorbed is sequentially adsorbed to the electrostatic chuck from one area of the first object to be adsorbed toward the opposite area,
When the adsorption of the first object to be adsorbed by the electrostatic chuck progresses in the advancing direction from the one area to the opposite area, and is adsorbed to an approximately half area of the first object to be adsorbed. The suction and alignment method according to claim 1, wherein the alignment step is started. In the step of attracting the first object to be attracted, the first object to be attracted is sequentially attracted to the electrostatic chuck from one corner portion of the first object to the other opposite corner portion,
The adsorption of the first object to be adsorbed by the electrostatic chuck proceeds along the adsorption proceeding direction from the one corner portion to the opposite other corner portion, and is adsorbed up to a substantially half region of the first object to be adsorbed. The adsorption and alignment method according to claim 1 or 2, wherein the alignment step is started at the point of time. The alignment is performed based on an image obtained by photographing each alignment mark formed at each of the four corners of the first attracted body and the second attracted body,
The adsorption of the first object to be adsorbed by the electrostatic chuck is advanced from one corner portion of the first object to be adjoined to the opposite corner portion, and the other corner portion of the first object is removed. The suction according to any one of claims 1 to 3, wherein the alignment is started at the time when the suction has proceeded to the formation regions of the alignment marks arranged in the remaining three corners. Alignment method. The first object to be attracted is a substrate,
The suction and alignment method according to any one of claims 1 to 4, wherein the second object to be adsorbed is a mask having an opening corresponding to a film forming pattern formed on the substrate. A method of forming a vapor deposition material on a substrate through a mask, comprising:
Loading the mask into a film forming apparatus equipped with an electrostatic chuck;
Loading the substrate into the film forming apparatus;
The adsorption and alignment method according to claim 1, wherein the electrostatic chuck is provided with the substrate as a first object to be adsorbed and the mask as a second object to be adsorbed. Adjusting the relative displacement between each other and adsorbing,
Evaporating the vapor deposition material in a state where the substrate and the mask are attracted to the electrostatic chuck, and depositing the vapor deposition material on the substrate through the mask;
A film forming method comprising: An electronic device manufacturing method, comprising manufacturing an electronic device using the film forming method according to claim 6. An adsorption system for adsorbing a first object to be adsorbed and a second object to be adsorbed via the first object to be adsorbed,
An electrostatic chuck that includes an electrode portion and that controls the voltage applied to the electrode portion to attract the first attracted body and the second attracted body via the first attracted body;
A control unit,
Pre-alignment for adjusting a relative positional deviation between the electrostatic chuck and the first attracted body in a state where the first attracted body is separated from the electrostatic chuck; 1. A position adjusting mechanism for performing alignment for adjusting relative positional deviation between the first attracted body and the second attracted body at a position where the attracted body and the second attracted body are close to each other. Including,
After the pre-alignment is performed, the control unit controls the position adjustment mechanism so as to start the alignment while the attraction of the first object to be attracted by the electrostatic chuck is in progress. Characteristic adsorption system. When the first chucked body is attracted by the electrostatic chuck, the control unit sequentially transfers the first chucked body to the electrostatic chuck from one area of the first chucked body toward the opposite area. It is controlled so as to be attracted, and the attraction of the first object to be attracted by the electrostatic chuck is advanced in the attraction progressing direction from the one area to the opposite area, and is approximately half of the first object to be attracted. 9. The suction system according to claim 8, wherein the position adjustment mechanism is controlled so that the alignment is started at the time when the area is sucked. When the electrostatic chuck chucks the first object to be adsorbed, the control unit sequentially causes the first object to be adsorbed to electrostatically move from one corner of the first object to the other opposite corner. The first chucked object is controlled to be chucked by the chuck, and the chucking of the first chucked object by the electrostatic chuck is advanced along a chucking advancing direction from the one corner portion to the opposite other corner portion. 10. The suction system according to claim 8 or 9, wherein the position adjustment mechanism is controlled so that the alignment is started when the suction is performed up to a substantially half region of the body. The alignment is performed on the basis of images obtained by photographing respective alignment marks formed at the four corners of the first attracted body and the second attracted body,
The controller causes the adsorption of the first object to be adsorbed by the electrostatic chuck to proceed from one corner portion of the first object to be adjoined to another opposite corner portion, and the other of the first object to be adsorbed. The position adjusting mechanism is controlled so as to start the alignment at the time point when the suction has proceeded to the alignment mark forming regions arranged in the remaining three corners excluding the corners. Item 10. The adsorption system according to any one of items 8 to 10. The first object to be attracted is a substrate,
The said 2nd to-be-adsorbed body is a mask which has an opening corresponding to the film-forming pattern formed into a film on the said substrate, The adsorption | suction system of any one of Claims 8-11 characterized by the above-mentioned. A film forming apparatus for forming a film on a substrate through a mask,
And a suction system for sucking the substrate, which is the first suction target, and the mask, which is the second suction target,
The film-forming apparatus, wherein the adsorption system is the adsorption system according to any one of claims 8 to 12.

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