JP7278541B2 - Electrostatic chuck system, film forming apparatus, adsorption method, film forming method, and electronic device manufacturing method - Google Patents

Description

The present invention relates to electrostatic chucks.

In the manufacture of an organic EL display device, an organic material layer or a metal layer is formed by evaporating an evaporation material evaporated from an evaporation source of a film forming apparatus onto a substrate through a mask having a pixel pattern formed thereon.

In an upward deposition type film forming apparatus, an evaporation source is provided below a vacuum vessel of the film forming apparatus, a substrate is arranged above the vacuum vessel, and vapor deposition is performed on the lower surface of the substrate. In the vacuum vessel of such an upward vapor deposition type film forming apparatus, the substrate is held at its lower surface by a substrate holder, and the bending of the substrate due to its own weight is a factor in lowering the vapor deposition accuracy.

As a method for reducing the deflection of the substrate due to its own weight, a technique using an electrostatic chuck is being studied. That is, an electrostatic chuck is provided above the support portion of the substrate holder, and an attraction potential difference is applied to the electrostatic chuck while the electrostatic chuck is in proximity to or in contact with the upper surface of the substrate. By inducing charges of opposite polarity on the surface of the substrate in this manner, deflection of the substrate can be reduced by causing the central portion of the substrate to be pulled by the electrostatic attraction of the electrostatic chuck.

Patent Document 1 (Japanese Patent Publication No. 2016-539489) proposes a technique of attracting a mask while holding a substrate with an electrostatic chuck.

Japanese Patent Publication No. 2016-539489

SUMMARY OF THE INVENTION It is an object of the present invention to provide a technology that can satisfactorily attract an object to be attracted such as a substrate or a mask to an electrostatic chuck.

An electrostatic chuck system according to a first aspect of the present invention is an electrostatic chuck system for attracting an object to be attracted, comprising an electrostatic chuck including an electrode portion and applying a potential difference to the electrode portion of the electrostatic chuck. and a potential difference control section for controlling the application of the potential difference by the potential difference application section, wherein the potential difference control section controls the first attraction for attracting the first object to be attracted to the electrostatic chuck. one potential difference, a second potential difference smaller than the first potential difference for maintaining the state in which the first adsorbed body is attracted to the electrostatic chuck, and a second potential difference that is smaller than the first potential difference for maintaining the state in which the first adsorbed body is attracted to the electrostatic chuck; and controlling to sequentially apply a third potential difference for adsorbing the second adsorbent to the electrode portion, wherein the third potential difference is larger than the second potential difference and smaller than the first potential difference. and the second electrostatic chuck, which has attracted the first object to be attracted, and the second object to be attracted are brought close to each other after the application of the second potential difference until the application of the third potential difference. and

A film forming apparatus according to a second aspect of the present invention is a film forming apparatus for forming a film on a substrate through a mask, wherein the substrate as the first adsorbed body and the mask as the second adsorbed body are adsorbed. and an electrostatic chuck system according to the first aspect of the present invention.

An attraction method according to a third aspect of the present invention is an attraction method for attracting an object to be attracted, wherein a first potential difference is applied to an electrode portion of an electrostatic chuck to attract the first object to be attracted to the electrostatic chuck. applying to the electrode portion a second potential difference that is smaller than the first potential difference and is for maintaining the state in which the first adsorbed body is attracted to the electrostatic chuck; and applying a third potential difference larger than the second potential difference and smaller than the first potential difference to the electrostatic chuck to attract the second adsorbed body via the first adsorbed body; bringing the electrostatic chuck, which adsorbs the first object to be attracted, closer to the second object to be attracted between applying the second potential difference and applying the third potential difference; characterized by comprising

A film forming method according to a fourth aspect of the present invention is a method of forming a film of a vapor deposition material on a substrate through a mask, wherein the substrate and the mask are attached to the electrostatic chuck by the adsorption method according to the third aspect of the present invention. and a step of evaporating the vapor deposition material in the adsorbed state and forming a film of the vapor deposition material on the substrate through the mask.

A method for manufacturing an electronic device according to a fifth aspect of the present invention is characterized by manufacturing an electronic device using the film forming method according to the fourth aspect of the present invention.

According to the present invention, an object to be attracted such as a substrate and a mask can be satisfactorily attracted to an electrostatic chuck.

FIG. 1 is a schematic diagram of part of an electronic device manufacturing apparatus. FIG. 2 is a schematic diagram of a film forming apparatus according to one embodiment of the present invention. FIG. 3A is a conceptual diagram of an electrostatic chuck system according to one embodiment of the invention. FIG. 3B is a schematic diagram of an electrostatic chuck system according to one embodiment of the invention. FIG. 3C is a schematic diagram of an electrostatic chuck system according to one embodiment of the invention. FIG. 4A is a schematic diagram showing a sequence of adsorption and holding of the substrate and mask to the electrostatic chuck. FIG. 4B is a schematic diagram showing a sequence of adsorption and holding of the substrate and mask to the electrostatic chuck. FIG. 4C is a schematic diagram showing a sequence of adsorption and holding of the substrate and mask to the electrostatic chuck. FIG. 4D is a schematic diagram showing a sequence of adsorption and holding of the substrate and mask to the electrostatic chuck. FIG. 5 is a graph showing changes in the potential difference applied to the electrostatic chuck. FIG. 6 is a schematic diagram showing an electronic device.

Preferred embodiments and examples of the present invention will be described below with reference to the drawings. However, the following embodiments and examples merely exemplify preferred configurations of the present invention, and the scope of the present invention is not limited to those configurations. In addition, unless otherwise specified, the scope of the present invention is limited only to the hardware configuration and software configuration of the apparatus, process flow, manufacturing conditions, dimensions, materials, shapes, etc., in the following description. It's not intended.

INDUSTRIAL APPLICABILITY The present invention can be desirably applied to an apparatus for forming a thin film (material layer) having a desired pattern on the surface of a substrate by vacuum deposition. As the material of the substrate, any material such as glass, polymer material film, or metal may be selected. Any material may be selected. The technology of the present invention is specifically applicable to manufacturing apparatuses for organic electronic devices (eg, organic EL display devices, thin-film solar cells), optical members, and the like. Among them, in a manufacturing apparatus of an organic EL display device, an organic EL display element is formed by evaporating a deposition material and depositing it on a substrate through a mask. be.

<Electronic Device Manufacturing Equipment>
FIG. 1 is a plan view schematically showing a configuration of part of an electronic device manufacturing apparatus.

The manufacturing apparatus of FIG. 1 is used, for example, for manufacturing display panels of organic EL display devices for smartphones. In the case of display panels for smartphones, for example, a 4.5th generation substrate (about 700 mm x 900 mm), a 6th generation full size (about 1500 mm x about 1850 mm) or half cut size (about 1500 mm x about 925 mm) substrate, After forming a film for forming an organic EL element, the substrate is cut out to manufacture a plurality of small-sized panels.

An electronic device manufacturing apparatus generally includes a plurality of cluster apparatuses 1 and a relay apparatus that connects the cluster apparatuses 1 .

The cluster apparatus 1 includes a plurality of film forming apparatuses 11 that perform processing (for example, film formation) on substrates S, a plurality of mask stock apparatuses 12 that store masks before and after use, and a transfer chamber 13 arranged in the center. equip.

In the transfer chamber 13 , a transfer robot 14 is installed to transfer the substrate S between the plurality of film forming apparatuses 11 and transfer the mask between the film forming apparatus 11 and the mask stock device 12 . The transport robot 14 is, for example, a robot having a structure in which a robot hand holding the substrate S is attached to an articulated arm.

In the film forming apparatus 11 (also referred to as a vapor deposition apparatus), a vapor deposition material stored in an evaporation source is heated by a heater to evaporate, and is vapor deposited onto a substrate through a mask. A series of film formation processes, such as transfer of the substrate S to and from the transfer robot 14, adjustment of the relative positions of the substrate S and the mask (alignment), fixing of the substrate S on the mask, and film formation (vapor deposition), are performed by the film formation apparatus. done.

In the mask stock device 12, new masks to be used in the film forming process in the film forming device 11 and used masks are stored separately in two cassettes. The transport robot 14 transports the used mask from the film forming apparatus 11 to the cassette of the mask stocking apparatus 12 , and transports the new mask stored in another cassette of the mask stocking apparatus 12 to the film forming apparatus 11 .

The cluster apparatus 1 includes a pass chamber 15 for transferring the substrates S from the upstream side to the cluster apparatus 1 in the flow direction of the substrates S, and a pass chamber 15 for transferring the substrates S which have been subjected to the film forming process in the cluster apparatus 1 to the other downstream side. A buffer chamber 16 for transmitting to the cluster device 1 is connected. The transport robot 14 in the transport chamber 13 receives the substrate S from the pass chamber 15 on the upstream side and transports it to one of the film forming apparatuses 11 (for example, the film forming apparatus 11a) within the cluster apparatus 1 . Further, the transport robot 14 receives the substrate S on which the film forming process in the cluster apparatus 1 has been completed from one of the plurality of film forming apparatuses 11 (for example, the film forming apparatus 11b), and transfers the substrate to a buffer connected downstream. Transfer to chamber 16 .

Between the buffer chamber 16 and the pass chamber 15, a swirling chamber 17 for changing the orientation of the substrate is installed. The swirl chamber 17 is provided with a transport robot 18 for receiving the substrate S from the buffer chamber 16 , rotating the substrate S by 180°, and transporting it to the pass chamber 15 . As a result, the orientation of the substrate S is the same between the cluster device 1 on the upstream side and the cluster device 1 on the downstream side, thereby facilitating the substrate processing.

The pass chamber 15, the buffer chamber 16, and the swirl chamber 17 are so-called relay devices that connect between the two cluster devices 1. The relay devices installed on the upstream side and/or the downstream side of the cluster device 1 serve as path At least one of chamber 15 , buffer chamber 16 and swirl chamber 17 is included.

The film forming device 11, the mask stock device 12, the transfer chamber 13, the buffer chamber 16, the swirling chamber 17, and the like are maintained in a high vacuum state during the manufacturing process of the organic EL display panel. The pass chamber 15 is normally maintained in a low vacuum state, but may be maintained in a high vacuum state if necessary.

In this embodiment, the configuration of the electronic device manufacturing apparatus has been described with reference to FIG. or the arrangement between the chambers may vary.

A specific configuration of the film forming apparatus 11 will be described below.
<Deposition equipment>
FIG. 2 is a schematic diagram showing the configuration of the film forming apparatus 11. As shown in FIG. In the following description, an XYZ orthogonal coordinate system with the vertical direction as the Z direction is used. When the substrate S is fixed so as to be parallel to the horizontal plane (XY plane) during film formation, the lateral direction (parallel to the short side) of the substrate S is the X direction, and the longitudinal direction (parallel to the long side). is the Y direction. Also, the angle of rotation about the Z-axis is represented by θ.

The film forming apparatus 11 includes a vacuum vessel 21 maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen gas, a substrate support unit 22, a mask support unit 23, and an electrostatic chuck provided inside the vacuum vessel 21. 24 and an evaporation source 25 .

The substrate support unit 22 is means for receiving and holding the substrate S transported by the transport robot 14 provided in the transport chamber 13, and is also called a substrate holder.

A mask support unit 23 is provided below the substrate support unit 22 . The mask support unit 23 is means for receiving and holding the mask M transported by the transport robot 14 provided in the transport chamber 13, and is also called a mask holder.

The mask M has an opening pattern corresponding to the thin film pattern to be formed on the substrate S, and is placed on the mask support unit 23 . In particular, a mask used to manufacture an organic EL element for smartphones is a metal mask having a fine opening pattern, and is also called FMM (Fine Metal Mask).

Above the substrate support unit 22, an electrostatic chuck 24 for attracting and fixing the substrate S by electrostatic attraction is provided. The electrostatic chuck 24 has a structure in which electric circuits such as metal electrodes are embedded in a dielectric (eg, ceramic material) matrix. When a positive (+) and negative (-) potential is applied to the metal electrode, a polarized charge opposite to that of the metal electrode is induced in the adsorbed body such as the substrate S through the dielectric matrix, and an electrostatic charge is generated between them. The substrate S is attracted and fixed to the electrostatic chuck 24 by the attractive force. The electrostatic chuck 24 may be formed with a single plate, or may be formed with a plurality of sub-plates. Moreover, even when it is formed of one plate, it may include a plurality of electric circuits inside and control the electrostatic attraction so that it differs depending on the position within the plate.

In this embodiment, as will be described later, the electrostatic chuck 24 attracts and holds not only the substrate S (first object to be attracted) but also the mask M (second object to be attracted) before film formation. After that, film formation is performed while holding the substrate S (first object to be attracted) and the mask M (second object to be attracted) by the electrostatic chuck 24 .

In this embodiment, the substrate S (first object to be attracted) arranged below the electrostatic chuck 24 in the vertical direction is attracted and held by the electrostatic chuck, and then the substrate S (first object to be attracted) is A mask M (second object to be attracted) arranged on the opposite side of the electrostatic chuck 24 in the center is attracted and held by the electrostatic chuck 24 over the substrate S (first object to be attracted).

Although not shown in FIG. 2, a cooling mechanism (for example, a cooling plate) that suppresses the temperature rise of the substrate S is provided on the side opposite to the adsorption surface of the electrostatic chuck 24, thereby suppressing alteration and deterioration of the organic material. It is good also as a structure which carries out.

Moreover, although not shown in FIG. 2, the electrostatic chuck 24 may also serve as a magnet plate. The magnet plate is a member that enhances the adhesion between the substrate S and the mask M during film formation by attracting the mask M with a magnetic force.

The evaporation source 25 includes a crucible (not shown) containing the evaporation material to be deposited on the substrate, a heater (not shown) for heating the crucible, and the evaporation material until the evaporation rate from the evaporation source becomes constant. It includes a shutter (not shown) and the like that prevent scattering. Evaporation source 25 can have a variety of configurations, such as a point source or a linear source, depending on the application.

Although not shown in FIG. 2, the film forming apparatus 11 includes a film thickness monitor (not shown) and a film thickness calculation unit (not shown) for measuring the thickness of the film deposited on the substrate.

A substrate Z actuator 26 , a mask Z actuator 27 , an electrostatic chuck Z actuator 28 , a position adjustment mechanism 29 and the like are provided on the upper outer side (atmosphere side) of the vacuum vessel 21 . These actuators and position adjusting mechanisms are composed of, for example, motors and ball screws, or motors and linear guides. The substrate Z actuator 26 is driving means for raising and lowering (moving in the Z direction) the substrate support unit 22 . The mask Z actuator 27 is driving means for raising and lowering (moving in the Z direction) the mask support unit 23 . The electrostatic chuck Z actuator 28 is driving means for raising and lowering (moving in the Z direction) the electrostatic chuck 24 .

The position adjustment mechanism 29 is driving means for alignment of the electrostatic chuck 24 . The position adjustment mechanism 29 moves the entire electrostatic chuck 24 relative to the substrate support unit 22 and the mask support unit 23 in the X direction, the Y direction, and the θ rotation. In this embodiment, alignment may be performed to adjust the positions of both the substrate S and the mask M by adjusting the positions of the electrostatic chuck 24 in the X, Y, and θ directions.

In addition to the drive mechanism described above, an alignment device for photographing alignment marks formed on the substrate S and the mask M is provided on the outer upper surface of the vacuum chamber 21 through a transparent window provided on the upper surface of the vacuum chamber 21 . A camera 20 may be installed. In this embodiment, the alignment cameras 20 may be installed at positions corresponding to the diagonals of the rectangular substrate S, mask M and electrostatic chuck 24, or at positions corresponding to the four corners of the rectangle.

The alignment camera 20 installed in the film forming apparatus 11 of the present embodiment is a fine alignment camera used for adjusting the relative position of the substrate S and the mask M with high accuracy, and its viewing angle is It's a narrow but high resolution camera. The film forming apparatus 11 may have a rough alignment camera with a relatively wide viewing angle and low resolution in addition to the fine alignment camera as the alignment camera 20 .

The position adjusting mechanism 29 adjusts the position of the substrate S (first adsorbed body) based on the positional information of the substrate S (first adsorbed body) and the mask M (second adsorbed body) acquired by the alignment camera 20 . and the mask M (second object to be adsorbed) are moved relative to each other to perform alignment.

The film forming apparatus 11 includes a controller (not shown). The control unit has functions such as transportation and alignment of the substrate S, control of the evaporation source, control of film formation, and the like. The control unit can be configured by, for example, a computer having a processor, memory, storage, I/O, and the like. In this case, the functions of the control unit are realized by the processor executing a program stored in memory or storage. As the computer, a general-purpose personal computer may be used, or a built-in computer or PLC (Programmable Logic Controller) may be used. Alternatively, some or all of the functions of the control unit may be implemented in an ASIC or F
A circuit such as a PGA may be used. Further, a control unit may be installed for each film forming apparatus, or one control unit may be configured to control a plurality of film forming apparatuses.

<Electrostatic Chuck System>
An electrostatic chuck system 30 according to the present embodiment will be described with reference to FIGS. 3A-3C. 3A is a conceptual block diagram of the electrostatic chuck system 30 of this embodiment, FIG. 3B is a schematic cross-sectional view of the electrostatic chuck 24, and FIG. 3C is a schematic plan view of the electrostatic chuck 24. It is a diagram.

The electrostatic chuck system 30 of the present embodiment includes an electrostatic chuck 24, a potential difference application section 31, and a potential difference control section 32, as shown in FIG. 3A.

The potential difference applying section 31 applies a potential difference for generating electrostatic attraction to the electrode section of the electrostatic chuck 24 . In this manner, the potential difference applying section 31 applies a voltage so as to form a desired potential (potential difference).

The potential difference control unit 32 controls the magnitude of the potential difference applied from the potential difference applying unit 31 to the electrode unit, the start point of application of the potential difference, the maintenance time of the potential difference, and the order of applying the potential difference in accordance with the progress of the film forming process of the film forming apparatus 11 . etc. to control. The potential difference control section 32 can, for example, independently control application of potential differences to the plurality of sub-electrode sections 241 to 249 included in the electrode section of the electrostatic chuck 24 for each sub-electrode section. Although the potential difference control unit 32 is provided separately from the control unit of the film forming apparatus 11 in this embodiment, the present invention is not limited to this, and may be integrated with the control unit of the film forming apparatus 11 .

The electrostatic chuck 24 includes an electrode portion that generates an electrostatic attraction force with the substrate S, and the electrode portion can include a plurality of sub-electrode portions 241-249. For example, the electrostatic chuck 24 of the present embodiment, as shown in FIG. It includes a plurality of divided sub-electrode portions 241-249. Therefore, the electrode section may include a plurality of sub-electrode sections 241 to 249 divided along one side (first side) of the plurality of sides of the electrostatic chuck 24 .

Each of the sub-electrode portions 241 to 249 includes an electrode pair 33 to which positive (first polarity) and negative (second polarity) potentials are applied in order to generate an electrostatic adsorption force. For example, each electrode pair 33 includes a first electrode 331 to which a positive potential is applied and a second electrode 332 to which a negative potential is applied.

The first electrode 331 and the second electrode 332 each have a comb shape, as shown in FIG. 3C. For example, the first electrode 331 and the second electrode 332 each include a plurality of comb teeth and a base connected to the plurality of comb teeth. The bases of the electrodes 331 and 332 supply electric potential to the comb teeth, and the plurality of comb teeth generate an electrostatic adsorption force with the substrate S. FIG. In one sub electrode portion, each comb tooth portion of the first electrode 331 is alternately arranged so as to face each comb tooth portion of the second electrode 332 .

The substrate S, which is the object to be attracted, is charged by electrostatic induction or dielectric polarization corresponding to the potential applied to the first electrode 331 and the second electrode 332 and is attracted to the electrostatic chuck 24 . By narrowing the comb-teeth portion of the second electrode 332 and the comb-teeth portion of the second electrode 332 and narrowing the space between them, a sufficiently strong attraction force can be generated even for the substrate S, which is an insulator.

That is, the comb teeth of the first electrode 331 and the comb teeth of the second electrode 332 form a large non-uniform electric field, and the resulting gradient force can strongly attract the insulating substrate. The narrower the interval between the comb teeth, the greater the gradient of the electric field intensity and the greater the attracting force. Since the gradient of the electric field between the comb tooth portions is large, it is desirable to use a high resistance material as the dielectric matrix in which the electrode portions of the electrostatic chuck 24 are embedded so as not to cause dielectric breakdown.

In this embodiment, the electrodes 331 and 332 of the sub-electrode portions 241 to 249 of the electrostatic chuck 24 are described as having a comb shape, but the present invention is not limited thereto, and the electrostatic attraction between the sub-electrode portions 241 to 249 and the substrate S is described. It can have various shapes as long as it can generate

The electrostatic chuck 24 of this embodiment has a plurality of adsorption portions corresponding to a plurality of sub-electrode portions. For example, as shown in FIG. 3C, the electrostatic chuck 24 of the present embodiment has nine adsorption portions corresponding to the nine sub-electrode portions 241 to 249, but is not limited to this, and can adsorb the substrate S. For more precise control, other numbers of adsorption units may be provided.

The adsorption portions are provided so as to be divided in the longitudinal direction (Y-axis direction) and the lateral direction (X-axis direction) of the electrostatic chuck 24, but are not limited thereto. It may be split only in the hand direction. A plurality of adsorption units may be configured by physically one plate having a plurality of electrode units, or by physically dividing a plurality of plates each having one or more electrode units. may be configured. For example, in the embodiment shown in FIG. 3C, each of the plurality of adsorption portions may be configured to correspond to each of the plurality of sub-electrode portions, and one adsorption portion may include the plurality of sub-electrode portions. may be configured.

In other words, by controlling the application of the potential difference to the sub-electrode parts 241 to 249 by the potential difference control part 32, as will be described later, the sub-electrode parts are arranged in the direction (Y direction) intersecting with the adsorption advancing direction (X direction) of the substrate S. The three sub-electrode portions 241, 244, and 247 can form one adsorption portion. That is, each of the three sub-electrode portions 241, 244, and 247 can be independently controlled for the potential difference. Therefore, these three sub-electrode portions 241, 244, and 247 can function as one adsorption portion. As long as each of the plurality of adsorption units can independently adsorb the substrate S, its specific physical structure and electric circuit structure may be changed.

<Adsorption Method and Control of Potential Difference by Electrostatic Chuck System>
The process of attracting the substrate S and the mask M to the electrostatic chuck 24 and the control of the potential difference will be described below with reference to FIGS. 4A to 4D and 5. FIG.

4A illustrates the process of attracting the substrate S to the electrostatic chuck 24. FIG.
In this embodiment, as shown in FIG. 4A, the substrate S is not simultaneously attracted to the entire bottom surface of the electrostatic chuck 24, but is statically moved along the first side (short side) of the electrostatic chuck 24. Suction progresses sequentially from one end of the electric chuck 24 toward the other end. However, the present invention is not limited to this, and for example, the adsorption of the substrate may progress from one corner on the diagonal line of the electrostatic chuck 24 toward another corner opposite thereto.

In order to sequentially attract the substrate S along the first side of the electrostatic chuck 24, the order of applying the first potential difference for attracting the substrate S to the plurality of sub-electrode portions 241 to 249 is controlled. Alternatively, the first potential difference may be applied to the plurality of sub-electrode portions 241 to 249 at the same time, but the structure and supporting force of the support portions of the substrate support unit 22 that supports the substrate S may be varied. For example, the potential difference control unit 32 may extend from the sub-electrode part 241 at one end of the electrostatic chuck 24 among the plurality of sub-electrode parts 241 to 249 to the other end of the electrostatic chuck 24 along the first side of the electrostatic chuck 24 . Control may be performed such that the first potential difference is applied sequentially toward the sub-electrode portion 249 .

FIG. 4A shows an embodiment in which the substrate S is sequentially attracted to the electrostatic chuck 24 by controlling potential differences applied to the plurality of sub-electrode portions 241 to 249 of the electrostatic chuck 24 . Here, three sub-electrode portions 241 , 244 , and 247 arranged along the long side direction (Y direction) of the electrostatic chuck 24 form the first adsorption portion 41 , and the central three sub-electrode portions 241 of the electrostatic chuck 24 Description will be made on the assumption that the three sub-electrode portions 242 , 245 and 248 constitute the second adsorption portion 42 and the remaining three sub-electrode portions 243 , 246 and 249 constitute the third adsorption portion 43 .

First, as shown in FIG. 4A , the substrate S is loaded into the vacuum chamber 21 of the film forming apparatus 11 and placed on the supporting portion of the substrate supporting unit 22 .

Subsequently, the electrostatic chuck 24 descends and moves toward the substrate S placed on the support portion of the substrate support unit 22 .

When the electrostatic chuck 24 is sufficiently close to or in contact with the substrate S, the potential difference control section 32 moves from the first adsorption section 41 toward the third adsorption section 43 along the first side (short side) of the electrostatic chuck 24 . Control is performed to sequentially apply the first potential difference (ΔV1).

That is, as shown in FIG. 4A , the first potential difference is first applied to the first attracting portion 41 , then the first potential difference is applied to the second attracting portion 42 , and finally the third attracting portion 43 is applied with the first potential difference. Control is performed so that one potential difference is applied.

The first potential difference (ΔV1) is set to a potential difference that is large enough to allow the substrate S to be reliably attracted to the electrostatic chuck 24 .

As a result, the attraction of the substrate S to the electrostatic chuck 24 progresses from the side of the substrate S corresponding to the first attraction portion 41 toward the third attraction portion 43 through the central portion of the substrate S (that is, The adsorption of the substrate S progresses in the X direction), and the substrate S is adsorbed to the electrostatic chuck 24 in a flat state without leaving wrinkles (deflection) in the central portion of the substrate S. This reduces the deflection of the substrate S attracted to the electrostatic chuck 24 .

In the present embodiment, an example in which the first potential difference (ΔV1) is applied while the electrostatic chuck 24 is sufficiently close to or in contact with the substrate S has been described. , or during the descent, the first potential difference (ΔV1) may be applied.

At a predetermined point after the process of attracting the substrate S to the electrostatic chuck 24 is completed, the potential difference control unit 32 changes the potential difference applied to the electrode part of the electrostatic chuck 24 to It is lowered from one potential difference (ΔV1) to a second potential difference (ΔV2) smaller than the first potential difference (ΔV1).

The second potential difference (ΔV2) is the attraction maintaining potential difference for maintaining the substrate S attracted to the electrostatic chuck 24, and the first potential difference (ΔV1 ). When the potential difference applied to the electrostatic chuck 24 is reduced to the second potential difference (ΔV2), the corresponding amount of polarization charge induced in the substrate S is also reduced to the first potential difference (ΔV1), as shown in FIG. 4B. However, after the substrate S is once attracted to the electrostatic chuck 24 by the first potential difference (ΔV1), the second potential difference (ΔV2) smaller than the first potential difference (ΔV1) is applied. Even if the voltage is applied, it is possible to maintain the state of adsorption of the substrate S.

By reducing the potential difference applied to the electrode portions of the electrostatic chuck 24 to the second potential difference (ΔV2) in this manner, the time required to separate the substrate S from the electrostatic chuck 24 can be shortened.

That is, when the substrate S is to be separated from the electrostatic chuck 24, even if the potential difference applied to the electrode portion of the electrostatic chuck 24 is zero (0), the electrostatic force between the electrostatic chuck 24 and the substrate S is immediately released. It takes a considerable amount of time (in some cases, several minutes) for the charges induced at the interface between the electrostatic chuck 24 and the substrate S to disappear rather than the attractive force disappearing. In particular, when the substrate S is attracted to the electrostatic chuck 24, the electrostatic attraction force (Fth) that is sufficient than the minimum electrostatic attractive force (Fth) required to attract the substrate S to the electrostatic chuck 24 is usually sufficient to ensure the attraction. The first potential difference (for example, ΔVmax shown in FIG. 5) is set so that a large electrostatic attraction acts on . It takes

In this embodiment, in order to prevent the overall process time (Tact) from increasing due to the time required to separate the substrate S from the electrostatic chuck 24, the substrate S is placed on the electrostatic chuck 24. At a predetermined time after the attraction, the potential difference applied to the electrostatic chuck 24 is lowered to the second potential difference.

In the embodiment shown in FIG. 4B, the potential difference applied to the first adsorption portion 41 to the third adsorption portion 43 of the electrostatic chuck 24 is simultaneously lowered to the second potential difference, but the present invention is limited to this. Instead, the point at which the potential difference is lowered to the second potential difference and the magnitude of the second potential difference to be applied may be different for each attraction portion. For example, the potential difference may be lowered to the second potential difference sequentially from the first adsorption portion 41 toward the third adsorption portion 43 .

After the potential difference applied to the electrode portion of the electrostatic chuck 24 is reduced to the second potential difference, the relative position between the substrate S attracted to the electrostatic chuck 24 and the mask M placed on the mask support unit 23 is reduced. Adjust the position (alignment). In the present embodiment, an example of performing relative positional adjustment (alignment) between the substrate S and the mask M after the potential difference applied to the electrode portion of the electrostatic chuck 24 has decreased to the second potential difference has been described. However, the present invention is not limited to this, and the alignment process may be performed while the first potential difference is being applied to the electrodes of the electrostatic chuck 24 .

Subsequently, as shown in FIG. 4C, the mask M is attracted through the substrate S by applying a third potential difference (ΔV3) to the electrode portion of the electrostatic chuck 24 . That is, the mask M is attracted to the lower surface of the substrate S attracted to the electrostatic chuck 24 .

For this reason, first, the electrostatic chuck 24 to which the substrate S is attracted is lowered toward the mask M by the electrostatic chuck Z actuator 28 .

When the lower surface of the substrate S attracted to the electrostatic chuck 24 is sufficiently close to or in contact with the mask M, the potential difference control section 32 causes the potential difference applying section 31 to apply the third potential difference (ΔV3) to the electrode section of the electrostatic chuck 24 . control to

The third potential difference (ΔV3) is larger than the second potential difference (ΔV2), and is preferably large enough to charge the mask M through the substrate S by electrostatic induction. As a result, the mask M can be attracted to the electrostatic chuck 24 over the substrate S. However, the present invention is not limited to this, and the third potential difference (ΔV3) may have the same magnitude as the second potential difference (ΔV2). Even if the third potential difference (.DELTA.V3) has the same magnitude as the second potential difference (.DELTA.V2), the relative motion between electrostatic chuck 24 or substrate S and mask M is increased by lowering electrostatic chuck 24, as described above. Therefore, even if the magnitude of the potential difference applied to the electrode portion of the electrostatic chuck 24 is not increased, electrostatic induction can also occur in the mask M due to the polarization charge electrostatically induced in the substrate S. It is possible to obtain a sufficient attracting force to attract the mask M to the electrostatic chuck 24 over the substrate S.

The third potential difference (.DELTA.V3) may be smaller than the first potential difference (.DELTA.V1), or may be approximately equal to the first potential difference (.DELTA.V1) in consideration of shortening the process time (Tact). . For example, the third potential difference (ΔV3) may be less than or equal to the first potential difference (ΔV1).

In the mask adsorption step illustrated in FIG. 4C, the potential difference control unit 32 applies the third potential difference (ΔV3) across the entire electrostatic chuck 24 so that the mask M can be adsorbed onto the lower surface of the substrate S without leaving wrinkles on the mask M. The voltages are not applied at the same time, but applied sequentially along the first side of the electrostatic chuck 24 from the first attracting portion 41 toward the third attracting portion 43 .

That is, as shown in FIG. 4C, the third potential difference is first applied to the first attracting portion 41, then the third potential difference is applied to the second attracting portion 42, and finally the third attracting portion 43 is applied with the third potential difference. A third potential difference is applied. Similarly to the application of the first potential difference, for example, the potential difference control unit 32, among the plurality of sub-electrode parts 241 to 249, controls the potential difference from the sub-electrode part 241 at one end of the electrostatic chuck 24 along the first side of the electrostatic chuck 24. may be controlled so that the third potential difference is sequentially applied toward the sub-electrode portion 249 at the other end of the electrostatic chuck 24 .

As a result, the adsorption of the mask M to the electrostatic chuck 24 progresses from the side of the mask M corresponding to the first adsorption portion 41 toward the third adsorption portion 43 through the central portion of the mask M (that is, , X direction), and the mask M is attracted to the electrostatic chuck 24 in a flat state without wrinkles remaining in the central portion of the mask M. Therefore, the deflection of the mask M attracted to the electrostatic chuck 24 is reduced.

In the present embodiment, an example of applying the third potential difference (ΔV3) while the electrostatic chuck 24 is in proximity to or in contact with the mask M has been described. A third potential difference (ΔV3) may be applied before or during the fall.

At a predetermined time after the process of attracting the mask M to the electrostatic chuck 24 is completed, the potential difference control unit 32 changes the potential difference applied to the electrode part of the electrostatic chuck 24 to The third potential difference (ΔV3) is lowered to a fourth potential difference (ΔV4) smaller than the third potential difference (ΔV3).

The fourth potential difference (ΔV4) is the attraction maintaining potential difference for maintaining the attraction state of the mask M attracted to the electrostatic chuck 24 over the substrate S, and is the third potential difference when the mask M is attracted to the electrostatic chuck . This potential difference is smaller than the potential difference (ΔV3). When the potential difference applied to the electrostatic chuck 24 is reduced to a fourth potential difference (ΔV4), the corresponding amount of polarization charge induced in the mask M is also reduced to a third potential difference (ΔV3), as shown in FIG. 4D. However, after the mask M is once attracted to the electrostatic chuck 24 by the third potential difference (ΔV3), a fourth potential difference (ΔV4) smaller than the third potential difference (ΔV3) is applied. Even if the voltage is applied, the adsorption state of the mask M can be maintained.

By reducing the potential difference applied to the electrode portions of the electrostatic chuck 24 to the fourth potential difference (ΔV4) in this manner, the time required to separate the substrate S from the electrostatic chuck 24 can be reduced.

In other words, when the mask M is to be separated from the electrostatic chuck 24, even if the potential difference applied to the electrodes of the electrostatic chuck 24 is zero (0), the electrostatic force between the electrostatic chuck 24 and the mask M is immediately removed. It takes a considerable amount of time (in some cases, several minutes) for the charge induced at the interface between the substrate S and the mask M to disappear, rather than the attractive force disappearing. In particular, when the electrostatic chuck 24 attracts the mask M, normally a sufficiently large potential difference is applied in order to ensure the attraction and to shorten the time required for the attraction. It takes a considerable amount of time until the separation of

In this embodiment, in order to prevent the overall process time (Tact) from increasing due to the time required for separating the mask M from the electrostatic chuck 24, the mask M is attached to the electrostatic chuck 24. At a predetermined time after the attraction, the potential difference applied to the electrostatic chuck 24 is lowered to a fourth potential difference.

In the embodiment shown in FIG. 4D, the potential difference applied to the first adsorption portion 41 to the third adsorption portion 43 of the electrostatic chuck 24 is simultaneously lowered to the fourth potential difference, but the present invention is not limited to this. , the timing at which the potential difference is lowered to the fourth potential difference and the magnitude of the applied fourth potential difference may be different for each attraction portion. For example, the potential difference may be lowered to the fourth potential difference sequentially from the first adsorption portion 41 toward the third adsorption portion 43 .

In this manner, a film formation process is performed in which the vapor deposition material evaporated from the evaporation source 25 is deposited on the substrate S through the mask M while the mask M is attracted to the electrostatic chuck 24 over the substrate S. . In this embodiment, an example in which the mask M is held by the electrostatic attraction force of the electrostatic chuck 24 has been described, but the present invention is not limited to this. By applying a magnetic force to the metal mask M, the mask M can be brought into close contact with the substrate S more reliably.

Hereinafter, control of the potential difference applied to the electrode portion or the sub-electrode portion of the electrostatic chuck 24 in the process of attracting and holding the substrate S and the mask M by the electrostatic chuck 24 will be described with reference to FIG.

First, in order to attract the substrate S to the electrostatic chuck 24, a first potential difference (.DELTA.V1) is applied to the electrode portion or sub-electrode portion of the electrostatic chuck 24 at a predetermined time (t1).

The first potential difference (.DELTA.V1) is large enough to obtain a sufficient electrostatic attraction force to attract the substrate S to the electrostatic chuck 24. It is preferable that the potential difference is as large as possible in order to reduce the time required for the generation of polarization charges on the substrate S after the application of . For example, the maximum potential difference (ΔVmax) that can be applied by the potential difference applying section 31 may be applied.

Subsequently, polarization charges are induced in the substrate S by the applied first potential difference, and after the substrate S is attracted to the electrostatic chuck 24 with sufficient electrostatic attraction force (t=t2), the electrode of the electrostatic chuck 24 or the sub-electrode portion is lowered to a second potential difference (.DELTA.V2). The second potential difference (.DELTA.V2) may be the lowest potential difference (.DELTA.Vmin) that allows the substrate S to be held in a state of being attracted to the electrostatic chuck .

Subsequently, in order to attract the mask M to the electrostatic chuck 24 over the substrate S, the potential difference applied to the electrode portion or the sub-electrode portion of the electrostatic chuck 24 is increased to the third potential difference (ΔV3) (t=t3). . The third potential difference (ΔV3) is a potential difference for attracting the mask M to the electrostatic chuck 24 through the substrate S, so it is preferable to have a magnitude equal to or greater than the second potential difference (ΔV2), considering the process time. is the maximum potential difference (ΔVmax) that the potential difference applying section 31 can apply.

In this embodiment, in order to shorten the time required to separate the substrate S and the mask M from the electrostatic chuck 24 after the film forming process, the potential difference applied to the electrode portion or the sub-electrode portion of the electrostatic chuck 24 is set to The third potential difference (ΔV3) is not maintained and is lowered to a smaller fourth potential difference (ΔV4) (t=t4). However, in order to maintain the state in which the mask M is attracted to the electrostatic chuck 24 over the substrate S, the fourth potential difference (ΔV4) is necessary to maintain the state in which only the substrate S is attracted to the electrostatic chuck 24. It is preferable that the potential difference is equal to or greater than the second potential difference (ΔV2).

After the film formation process is completed (t5), in order to separate the mask M from the electrostatic chuck 24, first, the potential difference applied to the electrode portion of the electrostatic chuck 24 is reduced so that only the substrate S can be held in an attracted state. potential difference (ΔVmin) (fifth potential difference).

As a result, after the mask (M) is separated, the potential difference applied to the electrodes of the electrostatic chuck 24 is reduced to zero (0) (that is, turned off), or a potential difference of the opposite polarity is applied (t = t6). Thereby, the polarization charges induced in the substrate S are removed, and the substrate S can be separated from the electrostatic chuck 24 .

In another embodiment for separating the substrate S and mask M from the electrostatic chuck 24, the step of stepping down to the fifth potential difference after the deposition process is completed is omitted, and the substrate S and mask M are removed from the electrostatic chuck 24 at the same time. separate from For this purpose, the potential difference applying section 31 is turned off, or a potential difference of opposite polarity is applied to the electrode section or sub-electrode section of the electrostatic chuck 24 . As a result, the substrate S and the mask M are separated from the electrostatic chuck 24 at the same time, and thereafter the substrate S and the mask M are separated using a separate mechanism.

<Deposition process>
A film formation method employing potential difference control of an electrostatic chuck according to this embodiment will be described below.

With the mask M placed on the mask support unit 23 in the vacuum chamber 21 , the substrate S is carried into the vacuum chamber 21 of the film forming apparatus 11 by the transfer robot 14 in the transfer chamber 13 .

The hand of the transport robot 14 that has entered the vacuum chamber 21 descends and places the substrate S on the support portion of the substrate support unit 22 .

Subsequently, the electrostatic chuck 24 descends toward the substrate S, and after the substrate S is sufficiently close to or in contact with the substrate S, the first potential difference (ΔV1) is applied to the electrostatic chuck 24 to attract the substrate S.

In one embodiment of the present invention, in order to maximize the time required to separate the substrate S from the electrostatic chuck 24 , the electrostatic chuck is removed after the substrate S is completely attached to the electrostatic chuck 24 . 24 is reduced from a first potential difference (ΔV1) to a second potential difference (ΔV2). Even if the potential difference applied to the electrostatic chuck 24 is lowered to the second potential difference (ΔV2), it takes time to discharge the polarization charge induced in the substrate S by the first potential difference (ΔV1). The attraction force to the substrate S by the electrostatic chuck 24 can be maintained.

In order to measure the relative displacement of the substrate S with respect to the mask M, the substrate S is lowered toward the mask M in a state where the substrate S is attracted to the electrostatic chuck 24 . In another embodiment of the present invention, in order to reliably prevent the substrate S from falling off the electrostatic chuck 24 during the process of lowering the substrate S attracted to the electrostatic chuck 24, the lowering process of the substrate S is controlled. is completed (that is, immediately before the alignment process described later starts), the potential difference applied to the electrostatic chuck 24 is lowered to the second potential difference (ΔV2).

When the substrate S descends to the measurement position, the alignment camera 20 photographs the alignment marks formed on the substrate S and the mask M to measure the relative positional deviation between the substrate S and the mask M. FIG. In another embodiment of the present invention, in order to further improve the accuracy of the relative position measurement process between the substrate S and the mask M, the electrostatic chuck 24 is removed after the measurement process for alignment is completed (during the alignment process). to a second potential difference. That is, by photographing the alignment marks of the substrate S and the mask M in a state in which the substrate S is strongly attracted to the electrostatic chuck 24 by the first potential difference (ΔV1) (a state in which the substrate S is kept flatter), measurement is performed. Process accuracy can be improved.

As a result of the measurement, if it is found that the relative positional deviation of the substrate S with respect to the mask M exceeds the threshold value, the substrate S in a state of being attracted to the electrostatic chuck 24 is moved in the horizontal direction (XYθ direction), and the substrate S is positioned (aligned) with respect to the mask M. In another embodiment of the present invention, the potential difference applied to electrostatic chuck 24 is reduced to a second potential difference (.DELTA.V2) after such alignment steps are completed. This makes it possible to further improve the accuracy of the entire alignment process (relative position measurement and position adjustment).

After the alignment process, the mask M is attracted to the electrostatic chuck 24 over the substrate S. Therefore, a third potential difference (.DELTA.V3) greater than or equal to the second potential difference is applied to the electrode portion or sub-electrode portion of the electrostatic chuck 24. FIG.

After the process of attracting the mask M as described above is completed, the potential difference applied to the electrode portion or the sub-electrode portion of the electrostatic chuck 24 is maintained in a state in which the substrate S and the mask M are attracted to the electrostatic chuck 24. is lowered to a fourth potential difference, which is the potential difference at which This can shorten the time required to separate the substrate S and the mask M from the electrostatic chuck 24 after the completion of the film formation process.

Subsequently, the shutter of the evaporation source 25 is opened, and the evaporation material is evaporated onto the substrate S through the mask M. Then, as shown in FIG.

After a desired thickness of the vapor deposition material is deposited on the substrate S, the potential difference applied to the electrode portion or sub-electrode portion of the electrostatic chuck 24 is lowered to a fifth potential difference to separate the mask M, and the electrostatic chuck 24 is placed on the substrate. The substrate S is lifted by the electrostatic chuck Z actuator 28 in a state where only S is attracted.

Subsequently, the hand of the transport robot 14 enters the vacuum chamber 21 of the film forming apparatus 11, and a potential difference of zero (0) or opposite polarity is applied to the electrode portion or sub-electrode portion of the electrostatic chuck 24 (t6). The electrostatic chuck 24 is separated from the substrate S and lifted. After that, the substrate S on which vapor deposition has been completed is carried out from the vacuum chamber 21 by the transfer robot 14 .

<Method for manufacturing electronic device>
Next, an example of a method for manufacturing an electronic device using the film forming apparatus of this embodiment will be described. The configuration and manufacturing method of an organic EL display device will be exemplified below as an example of an electronic device.

First, the organic EL display device to be manufactured will be described. FIG. 6A shows an overall view of an organic EL display device 60, and FIG. 6B shows a cross-sectional structure of one pixel.

As shown in FIG. 6A, in a display area 61 of an organic EL display device 60, a plurality of pixels 62 each having a plurality of light emitting elements are arranged in a matrix. Although details will be described later, each of the light emitting elements has a structure including an organic layer sandwiched between a pair of electrodes. The term "pixel" as used herein refers to a minimum unit capable of displaying a desired color in the display area 61. FIG. In the case of the organic EL display device according to this embodiment, the pixel 62 is configured by a combination of the first light-emitting element 62R, the second light-emitting element 62G, and the third light-emitting element 62B that emit light different from each other. The pixel 62 is often composed of a combination of a red light emitting element, a green light emitting element and a blue light emitting element, but may be a combination of a yellow light emitting element, a cyan light emitting element and a white light emitting element. It is not limited.

FIG. 6(b) is a schematic partial cross-sectional view taken along line AB in FIG. 6(a). The pixel 62 has an organic EL element provided on a substrate 63 with an anode 64, a hole transport layer 65, one of the light emitting layers 66R, 66G, 66B, an electron transport layer 67, and a cathode 68. there is Among these layers, the hole transport layer 65, the light emitting layers 66R, 66G and 66B, and the electron transport layer 67 correspond to organic layers. In this embodiment, the light emitting layer 66R is an organic EL layer that emits red, the light emitting layer 66G is an organic EL layer that emits green, and the light emitting layer 66B is an organic EL layer that emits blue. The light-emitting layers 66R, 66G, and 66B are formed in patterns corresponding to light-emitting elements (also referred to as organic EL elements) that emit red, green, and blue, respectively. Also, the anode 64 is formed separately for each light emitting element. The hole transport layer 65, the electron transport layer 67, and the cathode 68 may be formed in common with the plurality of light emitting elements 62R, 62G, and 62B, or may be formed for each light emitting element. An insulating layer 69 is provided between the plurality of anodes 64 in order to prevent the anodes 64 and cathodes 68 from short-circuiting due to foreign matter. Furthermore, since the organic EL layer is deteriorated by moisture and oxygen, a protective layer 70 is provided to protect the organic EL element from moisture and oxygen.

In FIG. 6B, the hole transport layer 65 and the electron transport layer 67 are shown as one layer, but depending on the structure of the organic EL display element, they may be formed of multiple layers including a hole blocking layer and an electron blocking layer. may be In addition, a hole injection layer having an energy band structure capable of smoothly injecting holes from the anode 64 to the hole transport layer 65 is provided between the anode 64 and the hole transport layer 65 . can also be formed. Similarly, an electron injection layer can be formed between cathode 68 and electron transport layer 67 .

Next, an example of a method for manufacturing an organic EL display device will be specifically described.
First, a substrate 63 on which a circuit (not shown) for driving an organic EL display device and an anode 64 are formed is prepared.

An acrylic resin is formed by spin coating on the substrate 63 on which the anode 64 is formed, and the acrylic resin is patterned by lithography so that an opening is formed in the portion where the anode 64 is formed, thereby forming an insulating layer 69 . Form. This opening corresponds to a light emitting region where the light emitting element actually emits light.

The substrate 63 on which the insulating layer 69 is patterned is carried into the first organic material deposition apparatus, the substrate 63 is held by the substrate support unit and the electrostatic chuck, and the hole transport layer 65 is placed on the anode 64 in the display area. It is deposited as a common layer on top. The hole transport layer 65 is deposited by vacuum deposition. Since the hole transport layer 65 is actually formed to have a size larger than that of the display area 61, a high-definition mask is not required.

Next, the substrate 63 on which the hole transport layer 65 is formed is carried into the second organic material deposition apparatus and held by the substrate support unit and the electrostatic chuck. Alignment of the substrate 63 and the mask is performed, the substrate 63 is placed on the mask, and a light-emitting layer 66R emitting red is formed on the portion of the substrate 63 where the element emitting red is to be arranged.

Similarly to the deposition of the light-emitting layer 66R, the third organic material deposition apparatus is used to deposit a green-emitting light-emitting layer 66G, and the fourth organic material deposition apparatus is used to deposit a blue-emitting light-emitting layer 66B. . After the formation of the light-emitting layers 66R, 66G, and 66B is completed, the electron transport layer 67 is formed over the entire display area 61 by the fifth film forming apparatus. The electron transport layer 67 is formed as a layer common to the three color light-emitting layers 66R, 66G, and 66B.

The substrate 63 formed up to the electron transport layer 67 is moved by a metallic vapor deposition material film forming apparatus to form the cathode 68 as a film.

According to the present invention, after the substrate and the mask are attracted to the electrostatic chuck 24, the potential difference applied to the electrostatic chuck 24 is lowered at a predetermined point in time, thereby removing the substrate and/or the mask from the electrostatic chuck 24. The time taken to separate can be shortened and the process time can be reduced.

After that, the substrate is moved to a plasma CVD apparatus to form a protective layer 70, and the organic EL display device 60 is completed.

If the substrate 63 on which the insulating layer 69 is patterned is carried into the film forming apparatus and is exposed to an atmosphere containing moisture and oxygen until the film formation of the protective layer 70 is completed, the light emitting layer made of the organic EL material will be damaged. It may deteriorate due to moisture and oxygen. Therefore, in this embodiment, the substrate is carried in and out between the film forming apparatuses under a vacuum atmosphere or an inert gas atmosphere.

The above-described embodiment merely shows an example of the present invention, and the present invention is not limited to the configuration of the above-described embodiment, and may be appropriately modified within the scope of the technical idea thereof.

1: Cluster device 11: Film formation device 12: Mask stock device 13: Transfer chamber 14: Transfer robot 20: Alignment camera 21: Vacuum container 22: Substrate support unit 23: Mask support unit 24: Electrostatic chuck 25: Evaporation source 28: Electrostatic chuck Z actuator 29: Position adjustment mechanism 30: Electrostatic chuck system 31: Potential difference application unit 32: Potential difference control unit 33: Electrode pairs 41 to 43: First adsorption unit to third adsorption unit 241 to 249: Sub Electrode part 331: first electrode 332: second electrode

Claims (16)

An electrostatic chuck system for attracting an object to be attracted,
an electrostatic chuck including an electrode unit;
a potential difference applying section for applying a potential difference to the electrode section of the electrostatic chuck;
a potential difference control unit for controlling application of the potential difference by the potential difference applying unit;
The potential difference control section controls a first potential difference for attracting a first object to be attracted to the electrostatic chuck , and a first potential difference for maintaining the first object to be attracted to the electrostatic chuck. and a third potential difference for attracting the second object to be attracted to the electrostatic chuck via the first object to be attracted, are sequentially applied to the electrode unit. ,
the third potential difference is larger than the second potential difference and smaller than the first potential difference;
The electrostatic chuck that adsorbs the first object to be attracted and the second object to be attracted are brought close to each other after the application of the second potential difference and before the application of the third potential difference. electrostatic chuck system. 2. The electrostatic chuck system of claim 1, wherein the potential difference control unit controls such that a fourth potential difference is applied to the electrode unit after applying the third potential difference. 3. The electrostatic chuck system of claim 2 , wherein the fourth potential difference is less than the third potential difference. 4. The electrostatic chuck system according to claim 2 , wherein the fourth potential difference is greater than or equal to the second potential difference. The electrostatic chuck system according to any one of claims 1 to 4 , wherein the electrode section includes a plurality of sub-electrode sections divided along the first side of the electrostatic chuck. . The potential difference control section sequentially extends from the sub-electrode section at one end of the electrostatic chuck to the sub-electrode section at the other end of the electrostatic chuck along the first side, among the plurality of sub-electrode sections. 6. The electrostatic chuck system of claim 5 , wherein control is performed to apply the first potential difference. The potential difference control section sequentially extends from the sub-electrode section at one end of the electrostatic chuck to the sub-electrode section at the other end of the electrostatic chuck along the first side, among the plurality of sub-electrode sections. 7. The electrostatic chuck system according to claim 5 , wherein control is performed so that the third potential difference is applied. The electrode section includes a comb-shaped first electrode to which a potential of a first polarity is applied, and a comb-shaped second electrode to which a potential of a polarity opposite to the first polarity is applied. The electrostatic chuck according to any one of claims 1 to 7 , wherein the comb teeth of one electrode and the comb teeth of the comb-shaped second electrode are alternately arranged. system. A film forming apparatus for forming a film on a substrate through a mask,
including an electrostatic chuck system for attracting the substrate as the first attraction target and the mask as the second attraction target,
A film forming apparatus, wherein the electrostatic chuck system is the electrostatic chuck system according to any one of claims 1 to 8 . An adsorption method for adsorbing an adsorbent,
a first step of applying a first potential difference to the electrode portion of the electrostatic chuck to attract the first object to be attracted to the electrostatic chuck;
After the first step, a second step of applying to the electrode portion a second potential difference that is smaller than the first potential difference and is for maintaining the state in which the first object to be attracted is attracted to the electrostatic chuck. and,
After the second step, a third potential difference that is larger than the second potential difference and smaller than the first potential difference is applied to the electrode portion, and a third potential difference is applied to the electrostatic chuck via the first adsorbed body. 2 a third step of adsorbing the adsorbent ;
bringing the electrostatic chuck, which adsorbs the first object to be attracted, closer to the second object to be attracted between applying the second potential difference and applying the third potential difference; A method of adsorption comprising: 11. The adsorption method according to claim 10 , further comprising applying a fourth potential difference smaller than the third potential difference to the electrode part after the step of adsorbing the second adsorbent. 12. The adsorption method according to claim 11 , wherein the fourth potential difference is greater than or equal to the second potential difference. In the step of attracting the first object to be attracted, from among a plurality of sub-electrode portions divided along the first side of the electrostatic chuck, from the sub-electrode portion at one end of the electrostatic chuck to the first side. 13. The chucking method according to claim 10 , wherein the first potential difference is sequentially applied toward the sub-electrode portion at the other end of the electrostatic chuck along the sub-electrode portion. In the step of attracting the second adsorbed body, from among a plurality of sub-electrode portions divided along the first side of the electrostatic chuck, from the sub-electrode portion at one end of the electrostatic chuck to the first side. 14. The adsorption method according to any one of claims 10 to 13 , wherein the third potential difference is applied sequentially toward the sub-electrode portion at the other end of the electrostatic chuck. A film formation method for forming a film of a vapor deposition material on a substrate through a mask,
A deposition material is evaporated in a state in which the substrate and the mask are adsorbed to the electrostatic chuck by the adsorption method according to any one of claims 10 to 14, and the deposition is performed on the substrate through the mask. and a step of depositing a material. A method of manufacturing an electronic device, comprising manufacturing an electronic device using the film forming method according to claim 15 .

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