KR102411995B1 - Electrostatic chuk system, apparatus for forming film, adsorption and separation method, method for forming film, and manufacturing method of electronic device - Google Patents

Abstract

The electrostatic chuck system of the present invention includes an electrostatic chuck including an electrode part, a voltage applying part for applying a voltage to the electrode part of the electrostatic chuck, and a voltage controller for controlling the application of a voltage by the voltage applying part, , the voltage control unit may include: a third voltage for adsorbing a second adsorbed body to the electrostatic chuck with a first adsorbed body interposed therebetween; 2 The voltage applying unit is controlled to apply a fifth voltage for separating the adsorbed body from the electrostatic chuck to the electrode unit.

Description

Electrostatic chuck system, film forming apparatus, adsorption and separation method, film forming method and manufacturing method of electronic device

The present invention relates to an electrostatic chuck system, a film forming apparatus, an adsorption and separation method, a film forming method, and a manufacturing method of an electronic device.

In the manufacture of an organic EL display device (organic EL display), when an organic light emitting element (organic EL element; OLED) constituting the organic EL display device is formed, the deposition material evaporated from the deposition source of the film forming device is used as a pixel pattern. By depositing on the substrate through the formed mask, an organic material layer or a metal layer is formed.

In the deposition apparatus of the deposition method (depo-up), the deposition source is installed below the vacuum container of the deposition apparatus, the substrate is disposed on the top of the vacuum container, and deposition is performed on the lower surface of the substrate. In the vacuum container of this upward deposition type film forming apparatus, since only the periphery of the lower surface of the substrate is held and supported by the substrate holder, the substrate sags by its own weight, which is one factor that lowers the deposition accuracy. is becoming Even in a film forming apparatus of a method other than the top-up deposition method, there is a possibility that the substrate may sag due to its own weight.

A technique using an electrostatic chuck is being studied as a method for reducing the sagging of the substrate due to its own weight. That is, sagging of the substrate can be reduced by adsorbing the upper surface of the substrate over the entire surface with the electrostatic chuck.

Patent Document 1 (Patent Publication No. 2007-0010723) proposes a technique for adsorbing a substrate and a mask with an electrostatic chuck.

Patent Publication No. 2007-0010723

However, Patent Document 1 does not disclose voltage control when the substrate and the mask are separated from the electrostatic chuck.

An object of the present invention is to satisfactorily adsorb both the first to-be-adsorbed body and the second to-be-adsorbed body to the electrostatic chuck, and to satisfactorily separate both the adsorbed first to-be-adsorbed body and the second to-be-adsorbed body from the electrostatic chuck.

An electrostatic chuck system according to a first aspect of the present invention includes an electrostatic chuck including an electrode part, a voltage applying part for applying a voltage to the electrode part of the electrostatic chuck, and controlling application of a voltage by the voltage applying part a voltage control unit, wherein the voltage control unit comprises: a third voltage for adsorbing a second adsorbed body to the electrostatic chuck with a first adsorbed body interposed therebetween; In this state, the voltage applying unit is controlled to apply a fifth voltage for separating the second adsorbed body from the electrostatic chuck to the electrode unit.

An electrostatic chuck system according to a second aspect of the present invention includes an electrostatic chuck including an electrode part, a voltage applying part for applying a voltage to the electrode part of the electrostatic chuck, and controlling voltage application by the voltage applying part and a voltage control unit, wherein the voltage control unit connects a first voltage for adsorbing a first adsorbed body to the electrostatic chuck, a second voltage smaller than the first voltage, and the first adsorbed body to the electrostatic chuck. It is characterized in that the voltage applying unit is controlled so that a third voltage for adsorbing the second adsorbed body and a fourth voltage smaller than the third voltage are sequentially applied to the electrode unit.

An electrostatic chuck system according to a third aspect of the present invention includes an electrostatic chuck including an electrode part, a voltage applying part for applying a voltage to the electrode part of the electrostatic chuck, and controlling application of a voltage by the voltage applying part and a voltage control unit, wherein the voltage control unit includes a first voltage for adsorbing a first adsorbed body to the electrostatic chuck, a second voltage smaller than the first voltage, and the first adsorbed body to the electrostatic chuck. a third voltage for adsorbing the second adsorbed body and a fifth voltage smaller than a third voltage for separating the second adsorbed body from the electrostatic chuck while the first adsorbed body is adsorbed to the electrostatic chuck and controlling the voltage applying unit to sequentially apply a voltage to the electrode unit.

A film forming apparatus according to a fourth aspect of the present invention is a film forming apparatus for forming a film on a substrate through a mask, comprising an electrostatic chuck system for adsorbing and separating a substrate as a first adsorbent and a mask as a second adsorbent and the electrostatic chuck system is an electrostatic chuck system according to any one of the first to third aspects of the present invention.

A method of adsorption and separation according to a fifth aspect of the present invention comprises the steps of applying a first voltage to an electrode part of an electrostatic chuck to make a first adsorbed body adsorb to the electrostatic chuck; applying a second voltage to the electrostatic chuck; applying a third voltage to the electrostatic chuck to adsorb the second adsorbed body with the first adsorbed body interposed therebetween; and applying a fifth voltage smaller than the third voltage to the electrode unit to separate the second adsorbent from the electrostatic chuck while the first adsorbent is adsorbed.

A film formation method according to a sixth aspect of the present invention is a method of depositing a deposition material on a substrate through a mask, comprising the steps of loading the mask into a vacuum container, loading the substrate into the vacuum container, and an electrode portion of an electrostatic chuck. adsorbing the substrate to the electrostatic chuck by applying a first voltage; applying a second voltage smaller than the first voltage to the electrode part; and applying a third voltage equal to or greater than the second voltage to the electrode part. adsorbing the mask to the electrostatic chuck with the substrate interposed therebetween; and evaporating the deposition material to the substrate through the mask while the substrate and the mask are adsorbed to the electrostatic chuck. forming a film; and applying a fifth voltage to the electrode unit to separate the second adsorbed body from the electrostatic chuck while the first adsorbed body is adsorbed to the electrostatic chuck; The voltage is characterized in that it is smaller than the third voltage.

A method for manufacturing an electronic device according to a seventh aspect of the present invention is characterized in that the electronic device is manufactured using the film forming method according to the sixth aspect of the present invention.

According to the present invention, both the first adsorbed body and the second adsorbed body can be satisfactorily adsorbed to the electrostatic chuck, and the first adsorbed body and the second adsorbed body adsorbed to the electrostatic chuck can be satisfactorily separated.

BRIEF DESCRIPTION OF THE DRAWINGS It is a schematic diagram of a part of the manufacturing apparatus of an electronic device.
2 is a schematic diagram of a film forming apparatus according to an embodiment of the present invention.
3A to 3C are conceptual views and schematic diagrams of an electrostatic chuck system according to an embodiment of the present invention.
4A to 4F are schematic diagrams showing a sequence of adsorption, holding, and separation of the substrate and the mask to the electrostatic chuck.
5 is a graph illustrating control of a voltage applied to the electrostatic chuck.
It is a schematic diagram which shows an electronic device.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments and examples of the present invention will be described with reference to the drawings. However, the following embodiments and examples are merely illustrative of preferred configurations of the present invention, and the scope of the present invention is not limited to these configurations. In addition, in the following description, the hardware configuration and software configuration of the device, processing flow, manufacturing conditions, size, material, shape, etc. are intended to limit the scope of the present invention to these unless specifically stated otherwise. not.

The present invention can be applied to an apparatus for forming a film by depositing various materials on the surface of a substrate, and can be preferably applied to an apparatus for forming a thin film (material layer) of a desired pattern by vacuum deposition. As the material of the substrate, any material such as glass, a film made of a polymer material, or a metal can be selected. For example, the substrate may be a substrate in which a film such as polyimide is laminated on a glass substrate. Moreover, arbitrary materials, such as an organic material and a metallic material (metal, metal oxide, etc.), can be selected also as a vapor deposition material. In addition to the vacuum deposition apparatus described in the following description, the present invention can also be applied to a film forming apparatus including a sputtering apparatus or a CVD (Chemical Vapor Deposition) apparatus. The technique of this invention is specifically applicable to manufacturing apparatuses, such as an organic electronic device (For example, an organic light emitting element, a thin film solar cell), an optical member. Among them, an apparatus for manufacturing an organic light emitting device that forms an organic light emitting device by evaporating a deposition material and depositing it on a substrate through a mask is one of preferred application examples of the present invention.

<Electronic device manufacturing apparatus>

BRIEF DESCRIPTION OF THE DRAWINGS It is a top view which shows typically the structure of a part of the manufacturing apparatus of an electronic device.

The manufacturing apparatus of FIG. 1 is used for manufacture of the display panel of the organic electroluminescent display for smartphones, for example. In the case of a display panel for a smartphone, for example, a substrate of the 4.5th generation (about 700 mm Х about 900 mm), a full size (about 1500 mm Х about 1850 mm) of the 6th generation, or a half-cut size (about 1500 mm Х) After film formation for formation of an organic EL element is performed on a substrate of about 925 mm in diameter, the substrate is cut out to produce a plurality of small-sized panels.

An electronic device manufacturing apparatus generally includes a plurality of cluster apparatuses 1 and a relay device connecting between the cluster apparatuses 1 .

The cluster apparatus 1 includes a plurality of film forming apparatuses 11 for performing a process (eg, film formation) on a substrate S, a plurality of mask stock apparatuses 12 for accommodating the masks M before and after use; A transfer chamber 13 disposed at the center thereof is provided. The transfer chamber 13 is connected to each of a plurality of film forming apparatuses 11 and a mask stock apparatus 12 as shown in FIG. 1 .

In the transfer chamber 13 , a transfer robot 14 that transfers a substrate and a mask is disposed. The transport robot 14 transports the substrate S from the pass chamber 15 of the relay device arranged on the upstream side to the film forming device 11 . In addition, the transfer robot 14 transfers the mask M between the film forming apparatus 11 and the mask stock apparatus 12 . The transfer robot 14 may be, for example, a robot having a structure in which a robot hand holding a substrate S or a mask M is mounted on an articulated arm.

In the film-forming apparatus 11 (also called a vapor deposition apparatus), the vapor deposition material accommodated in the vapor deposition source is heated by a heater, and evaporates, and is vapor-deposited on the board|substrate through a mask. The transfer of the substrate S with the transfer robot 14, adjustment (alignment) of the relative positions of the substrate S and the mask M, fixing of the substrate S on the mask M, and film formation (deposition) ) and the like are performed by the film forming apparatus 11 .

In the mask stock apparatus 12 , a new mask and a used mask to be used in the film forming process in the film forming apparatus 11 are divided and housed in two cassettes. The transfer robot 14 transfers the used mask from the film forming apparatus 11 to a cassette of the mask stock apparatus 12 , and transfers a new mask stored in another cassette of the mask stock apparatus 12 to the film forming apparatus 11 . return to

The cluster device 1 has a pass chamber 15 for transferring the substrate S from the upstream side in the flow direction of the substrate S to the cluster device 1 , and the cluster device 1 on which the film forming process is completed. A buffer chamber 16 for transferring the substrate S to another cluster device on the downstream side is connected. The transfer robot 14 of the transfer chamber 13 receives the substrate S from the pass chamber 15 on the upstream side, and receives one of the film forming apparatuses 11 in the cluster apparatus 1 (eg, the film forming apparatus 11a). ) to return In addition, the transfer robot 14 receives the substrate S on which the film forming process in the cluster apparatus 1 has been completed, from one of the plurality of film forming apparatuses 11 (eg, the film forming apparatus 11b), and is connected to the downstream side. It is transferred to the buffer chamber 16 .

Between the buffer chamber 16 and the pass chamber 15, a turning chamber 17 for changing the direction of the substrate is provided. In the turning chamber 17 , a transfer robot 18 for receiving the substrate S from the buffer chamber 16 , rotating the substrate S by 180 degrees, and transferring the substrate S to the pass chamber 15 is installed. Thereby, the direction of the substrate S becomes the same in the upstream cluster apparatus and the downstream cluster apparatus, and the substrate processing becomes easy.

The pass chamber 15, the buffer chamber 16, and the vortex chamber 17 are so-called relay devices connecting the cluster devices. The relay devices installed on the upstream and/or downstream side of the cluster device include the pass chamber and the buffer chamber. , including at least one of the turning rooms.

The film forming apparatus 11 , the mask stock apparatus 12 , the transfer chamber 13 , the buffer chamber 16 , the swirl chamber 17 and the like are maintained in a high vacuum state during the manufacturing process of the organic light emitting device. The pass chamber 15 is normally maintained in a low vacuum state, but may be maintained in a high vacuum state if necessary.

In the present embodiment, the configuration of the electronic device manufacturing apparatus has been described with reference to FIG. 1 , but the present invention is not limited thereto, and other types of apparatuses or chambers may be provided, and arrangements between these apparatuses or chambers may vary. have.

Hereinafter, the specific structure of the film-forming apparatus 11 is demonstrated.

<Film forming device>

2 is a schematic diagram showing the configuration of the film forming apparatus 11 . In the following description, an XYZ rectangular coordinate system with the vertical direction as the Z direction is used. When the substrate S is fixed parallel to the horizontal plane (XY plane) during film formation, the short side direction (a direction parallel to the short side) of the substrate S is the X direction, and the long side direction (the direction parallel to the long side) of the substrate S is the Y direction. do it with Also, the rotation angle around the Z axis is denoted by θ.

The film forming apparatus 11 includes a vacuum container 21 maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen gas, a substrate support unit 22 installed in the vacuum container 21 , and a mask support unit 23 , , an electrostatic chuck 24 , and an evaporation source 25 .

The substrate holding unit 22 receives and holds the substrate S conveyed by the transfer robot 14 installed in the transfer chamber 13 , and is also called a substrate holder.

A mask support unit 23 is installed under the substrate support unit 22 . The mask holding unit 23 is a means for receiving and holding the mask M transported by the transport robot 14 installed in the transport chamber 13 , and is also called a mask holder.

The mask M has an opening pattern corresponding to the thin film pattern to be formed on the substrate S, and is mounted on the mask support unit 23 . In particular, a mask used for manufacturing an organic EL device for a smartphone is a metal mask having a fine opening pattern formed therein, and is also called FMM (Fine Metal Mask).

An electrostatic chuck 24 for adsorbing and fixing the substrate by electrostatic attraction is installed above the substrate support unit 22 . The electrostatic chuck 24 has a structure in which an electric circuit such as a metal electrode is embedded in a dielectric (eg, ceramic material) matrix. The electrostatic chuck 24 may be a Coulomb force type electrostatic chuck, a Johnson-Rabeck force type electrostatic chuck, or a gradient force type electrostatic chuck. The electrostatic chuck 24 is preferably a gradient force type electrostatic chuck. By using the electrostatic chuck 24 as a gradient force type electrostatic chuck, even when the substrate S is an insulating substrate, it can be favorably absorbed by the electrostatic chuck 24 . When the electrostatic chuck 24 is a Coulomb force type electrostatic chuck, when positive (+) and negative (-) potentials are applied to the metal electrode, the metal electrode and the adsorbed body such as the substrate S through the dielectric matrix Polarized charges of opposite polarities are induced, and the substrate S is adsorbed and fixed to the electrostatic chuck 24 by an electrostatic attraction therebetween.

The electrostatic chuck 24 may be formed as a single plate or may be formed to have a plurality of sub-plates. In addition, even when it is formed of one plate, it is also possible to include a plurality of electric circuits therein to control the electrostatic force to be different depending on the position in one plate.

In this embodiment, as will be described later, not only the substrate S (first adsorbed body) but also the mask (M, second adsorbed body) is adsorbed and held by the electrostatic chuck 24 before film formation. Thereafter, a film is formed while the substrate S (first adsorbed body) and the mask M (second adsorbed body) are held by the electrostatic chuck 24 , and after the film formation is completed, the substrate S (first adsorbed body) is held. The holding by the electrostatic chuck 24 to the adsorbed body) and the mask (M, the second adsorbed body) is released.

That is, in the present embodiment, the substrate S (first adsorbed body) placed on the lower side of the electrostatic chuck 24 in the vertical direction is sucked and held by the electrostatic chuck 24 , and thereafter, the substrate S (first adsorbed body) is held thereafter. The mask M (second adsorbed body) placed on the opposite side of the electrostatic chuck 24 with the adsorbed body) interposed therebetween is adsorbed and held by the electrostatic chuck 24 over the substrate S (first adsorbed body). Then, after film formation is performed in a state where the substrate (S, first adsorbed body) and the mask (M, second adsorbed body) are held by the electrostatic chuck 24, the substrate (S, first adsorbed body) and the mask (S) and the mask ( M, the second adsorbed body) is peeled from the electrostatic chuck 24 . At this time, the mask M (2nd adsorption target) adsorbed with the board|substrate S interposed therebetween may be peeled first, and then the board|substrate S (1st adsorption target body) may be peeled. Alternatively, the mask M (the second adsorbed body) and the substrate S (the first adsorbed body) may be both peeled off from the electrostatic chuck 24 . This will be described later with reference to FIGS. 3 to 5 .

Although not shown in FIG. 2 , by providing a cooling mechanism (eg, a cooling plate) for suppressing the temperature rise of the substrate S on the opposite side to the adsorption surface of the electrostatic chuck 24 , organic substances deposited on the substrate S are provided. It is good also as a structure which suppresses the change of quality and deterioration of a material.

The deposition source 25 includes a crucible (not shown) in which the deposition material to be formed on the substrate is accommodated, a heater (not shown) for heating the crucible, and the deposition material scatters to the substrate until the evaporation rate from the deposition source becomes constant. and a shutter (not shown) to prevent it. The deposition source 25 may have various configurations according to uses, such as a point deposition source or a linear deposition source.

Although not shown in Fig. 2, the film forming apparatus 11 includes a film thickness monitor (not shown) and a film thickness calculation unit (not shown) for measuring the film thickness deposited on the substrate.

A substrate Z actuator 26 , a mask Z actuator 27 , an electrostatic chuck Z actuator 28 , a positioning mechanism 29 and the like are provided on the upper outer side (atmospheric side) of the vacuum container 21 . These actuators and the positioning device are composed of, for example, a motor and a ball screw, or a motor and a linear guide. The substrate Z actuator 26 is a driving means for elevating (moving in the Z direction) the substrate supporting unit 22 . The mask Z actuator 27 is a driving means for lifting (moving in the Z direction) the mask support unit 23 . The electrostatic chuck Z actuator 28 is a driving means for lifting (moving in the Z direction) the electrostatic chuck 24 .

The positioning mechanism 29 is a driving means for alignment of the electrostatic chuck 24 . The positioning mechanism 29 moves the entire electrostatic chuck 24 with respect to the substrate support unit 22 and the mask support unit 23 in the X direction, in the Y direction, and rotates θ. In the present embodiment, alignment is performed to adjust the relative positions of the substrate S and the mask M by positioning the electrostatic chuck 24 in the XYθ direction while the substrate S is adsorbed.

On the outer upper surface of the vacuum container 21, in addition to the driving mechanism described above, an alignment camera for photographing the alignment marks formed on the substrate S and the mask M through a transparent window installed on the upper surface of the vacuum container 21 ( 20) may be installed. In this embodiment, the alignment camera 20 is installed at a position corresponding to the diagonal of the rectangular substrate S, the mask M, and the electrostatic chuck 24 or at a position corresponding to four corners of the rectangle. You can do it.

The camera 20 for alignment provided in the film forming apparatus 11 of this embodiment is a camera for fine alignment used for adjusting the relative position of the board|substrate S and the mask M with high precision, The viewing angle is narrow, It is a camera with high resolution. In addition to the camera 20 for fine alignment, the film-forming apparatus 11 may include the camera for rough alignment with a relatively wide viewing angle and low resolution.

The position adjustment mechanism 29 is based on the positional information of the board|substrate S, 1st to-be-adsorbed body, and the mask M, 2nd to-be-adsorbed body acquired with the camera 20 for alignment, the board|substrate S, 1st to-be-adsorbed body. ) and the mask (M, 2nd to-be-adsorbed body) are moved relatively, and alignment is performed to adjust a position.

The film forming apparatus 11 includes a control unit (not shown). The control part has functions, such as conveyance and alignment of the board|substrate S, control of the vapor deposition source 25, and control of film-forming. The control unit is configurable by, for example, a computer having a processor, memory, storage, I/O, and the like. In this case, the function of the control unit is realized by the processor executing the program stored in the memory or storage. As the computer, a general-purpose personal computer may be used, and an embedded computer or a programmable logic controller (PLC) may be used. Alternatively, some or all of the functions of the control unit may be configured by circuits such as ASICs or FPGAs. Moreover, a control part may be provided for each film-forming apparatus, and it may be comprised so that one control part controls a plurality of film-forming apparatuses.

<Electrostatic chuck system>

An electrostatic chuck system 30 according to the present embodiment will be described with reference to FIGS. 3A to 3C .

3A is a conceptual block diagram of the electrostatic chuck system 30 of the present embodiment, FIG. 3B is a schematic cross-sectional view of the electrostatic chuck 24 , and FIG. 3C is a schematic plan view of the electrostatic chuck 24 .

As shown in FIG. 3A , the electrostatic chuck system 30 of the present embodiment includes an electrostatic chuck 24 , a voltage application unit 31 , and a voltage control unit 32 .

The voltage applying unit 31 applies a voltage for generating an electrostatic attraction to the electrode portion of the electrostatic chuck 24 .

The voltage control unit 32 is configured to control a magnitude of a voltage applied to the electrode unit from the voltage applying unit 31 according to the adsorption process of the electrostatic chuck system 30 or a film forming process of the film forming apparatus 11 , and a start time of voltage application. , voltage holding time, voltage application sequence, etc. are controlled. For example, the voltage controller 32 may independently control the application of voltages to the plurality of sub-electrode units 241 to 249 included in the electrode unit of the electrostatic chuck 24 for each sub-electrode unit. In the present embodiment, the voltage control unit 32 is implemented separately from the control unit of the film forming apparatus 11 , but the present invention is not limited thereto, and may be integrated into the control unit of the film forming apparatus 11 .

The electrostatic chuck 24 includes an electrode unit that generates an electrostatic adsorption force for adsorbing an object to be adsorbed (eg, the substrate S and the mask M) on the adsorption surface, and the electrode unit includes a plurality of sub-electrode units 241 to 249 . may include For example, in the electrostatic chuck 24 of the present embodiment, as shown in FIG. 3C , a direction parallel to a long side of the electrostatic chuck 24 (Y direction) and/or a direction parallel to a short side of the electrostatic chuck 24 . It includes a plurality of sub-electrode units 241 to 249 divided along (X direction).

Each sub-electrode unit includes an electrode pair 33 to which positive (first polarity) and negative (second polarity) potentials are applied to generate an electrostatic attraction force. For example, each electrode pair 33 includes a first electrode 331 to which a positive potential is applied and a second electrode 332 to which a negative potential is applied.

The first electrode 331 and the second electrode 332 have a comb shape, respectively, as shown in FIG. 3C . For example, the first electrode 331 and the second electrode 332 each have a plurality of comb portions and a base to which the plurality of comb portions are connected. The base of each electrode 331 and 332 supplies an electric potential to a plurality of comb portions, and the plurality of comb portions generates an electrostatic attraction force between it and an adsorbed body. In one sub-electrode portion, each of the comb portions of the first electrode 331 is alternately disposed to face each of the comb portions of the second electrode 332 . In this way, by configuring each of the comb portions of the electrodes 331 and 332 to face each other and to be entangled with each other, the gap between the electrodes to which different potentials are applied can be narrowed, a large unequal electric field is formed, and the gradient force causes the substrate (S) can adsorb.

In the present embodiment, the electrodes 331 and 332 of the sub-electrode units 241 to 249 of the electrostatic chuck 24 have been described as having a comb shape, but the present invention is not limited thereto. As long as it is capable of generating electrostatic attraction, it may have various shapes.

The electrostatic chuck 24 of the present embodiment has a plurality of adsorption portions corresponding to the plurality of sub-electrode portions. For example, the electrostatic chuck 24 of the present embodiment may have nine adsorption parts corresponding to the nine sub-electrode parts 241 to 249 as shown in FIG. 3C , but is not limited thereto, and the substrate S ), in order to more precisely control the adsorption of the adsorption unit may have a different number of adsorption units.

The adsorption unit may be installed to be divided in the long side direction (Y-axis direction) and the short side direction (X-axis direction) of the electrostatic chuck 24 , but is not limited thereto, and is divided only in the long side direction or the short side direction of the electrostatic chuck 24 . it might be The plurality of adsorption units may be implemented as a physically single plate having a plurality of electrode units, or may be implemented as each of a plurality of physically divided plates has one or more electrode units.

In the embodiment shown in FIG. 3C , each of the plurality of adsorption units may be implemented to correspond to each of the plurality of sub-electrode units, but one adsorption unit may be implemented to include a plurality of sub-electrode units.

For example, by controlling application of a voltage to the sub-electrode units 241 to 249 by the voltage control unit 32 , as will be described later, a direction (Y direction) intersecting the adsorption direction (X direction) of the substrate S The three sub-electrode units 241 , 244 , and 247 arranged as . That is, each of the three sub-electrode units 241 , 244 , and 247 can be independently voltage controlled, but by controlling the voltage to be simultaneously applied to the three sub-electrode units 241 , 244 , 247 The electrode portions 241 , 244 , and 247 can function as one adsorption portion. As long as the substrate can be adsorbed independently to each of the plurality of adsorption units, its specific physical structure and electrical circuit structure may be different.

<Adsorption and separation method and voltage control by electrostatic chuck system>

Hereinafter, a process for adsorbing and separating the substrate S and the mask M on the electrostatic chuck 24 and voltage control thereof will be described with reference to FIGS. 4A to 4F and 5 .

FIG. 4A shows a process of adsorbing the substrate S to the electrostatic chuck 24 .

In the present embodiment, as shown in FIG. 4A , the entire surface of the substrate S is not simultaneously attracted to the lower surface of the electrostatic chuck 24 , but from one end to the other end along the first side (short side) of the electrostatic chuck 24 . adsorption proceeds sequentially toward However, the present invention is not limited thereto, and for example, the substrate may be adsorbed from any one diagonal edge of the electrostatic chuck 24 toward another opposite edge thereof. Alternatively, the substrate may be adsorbed from the central portion of the electrostatic chuck 24 toward the peripheral portion.

In order to sequentially adsorb the substrate S along the first side of the electrostatic chuck 24 , the order of applying the first voltage for adsorption of the substrate to the plurality of sub-electrode units 241 to 249 may be controlled. , while simultaneously applying the first voltage to the plurality of sub-electrode units 241 to 249 , the structure or supporting force of the supporting unit of the substrate supporting unit 22 supporting the substrate S may be different.

FIG. 4A illustrates an embodiment in which the substrate S is sequentially adsorbed to the electrostatic chuck 24 by controlling the voltages applied to the plurality of sub-electrode units 241 to 249 of the electrostatic chuck 24 . Here, the three sub-electrode units 241 , 244 , and 247 arranged along the long side direction (Y direction) of the electrostatic chuck 24 form the first adsorption unit 41 , and a central portion of the electrostatic chuck 24 is formed. The description is based on the assumption that the three sub-electrode units 242 , 245 , and 248 form the second adsorption unit 42 , and the remaining three sub-electrode units 243 , 246 , 249 form the third adsorption unit 43 . do.

First, as shown in FIG. 4A , the substrate S is loaded into the vacuum container 21 of the film forming apparatus 11 and supported by the support portion of the substrate support unit 22 .

Then, the electrostatic chuck 24 descends and moves toward the substrate S supported by the support portion of the substrate support unit 22 .

When the electrostatic chuck 24 is sufficiently close to or in contact with the substrate S, the voltage control unit 32 absorbs the third suction portion from the first suction unit 41 along the first side (short side) of the electrostatic chuck 24 . It is controlled so that the first voltage ΔV1 is sequentially applied toward the unit 43 .

That is, as shown in FIG. 4A , the first voltage is first applied to the first adsorption unit 41 , and then the first voltage is applied to the second adsorption unit 42 , and finally the third adsorption unit ( 43) is controlled so that the first voltage is applied.

The first voltage [Delta]V1 is set to a voltage of sufficient magnitude to surely adsorb the substrate S to the electrostatic chuck 24 .

As a result, the substrate S is adsorbed to the electrostatic chuck 24 from the side corresponding to the first adsorption unit 41 of the substrate S through the central portion of the substrate S to the third adsorption unit 43 side. (ie, the substrate S is adsorbed in the X direction), and the substrate S may be adsorbed to the electrostatic chuck 24 in a flat manner without leaving wrinkles in the center of the substrate.

In the present embodiment, it has been described that the first voltage ΔV1 is applied while the electrostatic chuck 24 is sufficiently close to or in contact with the substrate S. However, the electrostatic chuck 24 starts to descend toward the substrate S. The first voltage ?V1 may be applied before or during the fall.

At a predetermined time after the adsorption process of the substrate S to the electrostatic chuck 24 is completed, the voltage control unit 32 controls the voltage applied to the electrode unit of the electrostatic chuck 24 as shown in FIG. 4B . The voltage is lowered from the first voltage ΔV1 to the second voltage ΔV2 having a smaller magnitude than the first voltage ΔV1.

The second voltage ΔV2 is an adsorption holding voltage for holding the substrate S in a state in which it is adsorbed to the electrostatic chuck 24 . The second voltage ΔV2 is a first voltage ( It is a voltage with a magnitude smaller than ΔV1). When the voltage applied to the electrostatic chuck 24 is lowered to the second voltage ΔV2, the amount of polarized charge induced in the substrate S in response thereto is also shown in FIG. 4B, when the first voltage ΔV1 is applied. Although it is decreased compared to the case, after the substrate S is once adsorbed to the electrostatic chuck 24 by the first voltage ΔV1, the substrate is adsorbed even when a second voltage ΔV2 lower than the first voltage ΔV1 is applied. state can be maintained.

As such, by lowering the voltage applied to the electrode portion of the electrostatic chuck 24 to the second voltage ΔV2 , the time required to separate the substrate from the electrostatic chuck 24 may be shortened.

That is, when the substrate S is separated from the electrostatic chuck 24 , even if the voltage applied to the electrode portion of the electrostatic chuck 24 is zero, the electrostatic chuck 24 and the substrate S are It takes a considerable amount of time (sometimes about several minutes) for the charge induced at the interface between the electrostatic chuck 24 and the substrate S to disappear, rather than the electrostatic attraction therebetween. In particular, when the substrate S is adsorbed to the electrostatic chuck 24 , the first electrostatic force sufficiently larger than the minimum electrostatic force Fth required to adsorb the substrate to the electrostatic chuck 24 is applied to ensure the adsorption. A voltage (eg, ΔV max shown in FIG. 5 ) is set, and it takes a considerable amount of time for the substrate to be separated from the first voltage.

In the present embodiment, in order to prevent the overall process time Tact from increasing due to the time required for the separation of the substrate S from the electrostatic chuck 24 , after the substrate S is adsorbed to the electrostatic chuck 24 , Then, the voltage applied to the electrode part of the electrostatic chuck 24 is lowered to the second voltage at a predetermined time point.

In the embodiment shown in FIG. 4B , the voltage applied to the first adsorption unit 41 to the third adsorption unit 43 of the electrostatic chuck 24 is simultaneously lowered to the second voltage, but the present invention is limited thereto. The time of lowering to the second voltage or the magnitude of the second voltage applied may be different for each adsorption unit. For example, you may lower|reduce to a 2nd voltage sequentially toward the 3rd adsorption|suction part 43 from the 1st adsorption|suction part 41.

In this way, after the voltage applied to the electrode portion of the electrostatic chuck 24 is lowered to the second voltage, the substrate S adsorbed to the electrostatic chuck 24 and the mask M supported by the mask support unit 23 are separated. Adjust (align) the relative position. In the present embodiment, it has been described that the relative position adjustment (alignment) between the substrate S and the mask M is performed after the voltage applied to the electrode portion of the electrostatic chuck 24 is lowered to the second voltage. It is not limited, and the alignment process may be performed while the first voltage is applied to the electrode portion of the electrostatic chuck 24 .

Next, as shown in FIG. 4C , a third voltage ΔV3 is applied to the electrode portion of the electrostatic chuck 24 , thereby adsorbing the mask M to the electrostatic chuck 24 with the substrate S interposed therebetween. . That is, the mask M is adsorbed to the lower surface of the substrate S adsorbed to the electrostatic chuck 24 .

To this end, first, the electrostatic chuck 24 on which the substrate S is adsorbed is lowered toward the mask M by the electrostatic chuck Z actuator 28 .

When the lower surface of the substrate S adsorbed on the electrostatic chuck 24 is sufficiently close to or in contact with the mask M, the voltage controller 32 controls the voltage applying unit 31 to control the electrode portion of the electrostatic chuck 24 . 3 The voltage (ΔV3) is controlled to be applied.

The third voltage ΔV3 is larger than the second voltage ΔV2, and preferably has a size that allows the mask M to be charged by electrostatic induction with the substrate S interposed therebetween. Accordingly, the mask M can be adsorbed to the electrostatic chuck 24 with the substrate S interposed therebetween. However, the present invention is not limited thereto, and the third voltage ΔV3 may have the same magnitude as the second voltage ΔV2. Even if the third voltage ΔV3 has the same magnitude as the second voltage ΔV2 , as described above, the electrostatic chuck 24 or between the substrate S and the mask M due to the lowering of the electrostatic chuck 24 . Since the relative distance is narrowed, even without increasing the magnitude of the voltage applied to the electrode portion of the electrostatic chuck 24, electrostatic induction may be induced in the mask M by the polarized charge induced on the substrate, and the mask ( M) can be obtained with an adsorption force sufficient to be adsorbed to the electrostatic chuck 24 with the substrate interposed therebetween.

The third voltage ΔV3 may be made smaller than the first voltage ΔV1 or may have a level equal to that of the first voltage ΔV1 in consideration of the shortening of the process time Tact.

In the mask adsorption process shown in FIG. 4C , the voltage controller 32 applies the third voltage ΔV3 to the entire electrostatic chuck 24 so that the mask M can be adsorbed to the lower surface of the substrate S without leaving wrinkles. It is not applied simultaneously over the , but sequentially applied from the first adsorption unit 41 to the third adsorption unit 43 along the first side.

That is, as shown in FIG. 4C , a third voltage is first applied to the first adsorption unit 41 , and then a third voltage is applied to the second adsorption unit 42 , and the third adsorption unit 43 . Finally, the third voltage is controlled to be applied.

As a result, the mask M is adsorbed to the electrostatic chuck 24 from the side corresponding to the first adsorption portion 41 of the mask M to the third adsorption portion 43 side through the central portion of the mask M. (that is, the mask M is adsorbed in the X direction), and the mask M can be adsorbed to the electrostatic chuck 24 flatly without wrinkles occurring in the center of the mask M. have.

In the present embodiment, it has been described that the third voltage ΔV3 is applied while the electrostatic chuck 24 is sufficiently close to or in contact with the mask M. However, the electrostatic chuck 24 starts to descend toward the mask M. The third voltage ?V3 may be applied before or during the fall.

At a predetermined time after the process of adsorption of the mask M to the electrostatic chuck 24 is completed, the voltage controller 32 controls the voltage applied to the electrode part of the electrostatic chuck 24 as shown in FIG. 4D . The third voltage ΔV3 is lowered to a fourth voltage ΔV4 having a smaller magnitude than the third voltage ΔV3.

The fourth voltage ΔV4 is an adsorption holding voltage for maintaining an adsorption state of the mask M adsorbed to the electrostatic chuck 24 with the substrate S interposed therebetween. It is a voltage lower than the 3rd voltage (DELTA)V3 applied at the time of adsorption|suction. When the voltage applied to the electrostatic chuck 24 is lowered to the fourth voltage ΔV4, the amount of charge induced in the mask M in response thereto is also shown in FIG. 4D when the third voltage ΔV2 is applied. However, after the mask M is once adsorbed to the electrostatic chuck 24 by the third voltage ΔV3, the mask is adsorbed even when a fourth voltage ΔV4 lower than the third voltage ΔV3 is applied. can keep

As such, by lowering the voltage applied to the electrode portion of the electrostatic chuck 24 to the fourth voltage ΔV4 , the time taken to separate the mask M from the electrostatic chuck 24 may be reduced.

That is, when the mask M is separated from the electrostatic chuck 24 , even if the voltage applied to the electrode portion of the electrostatic chuck 24 is zero (0), the electrostatic chuck 24 and the mask M are It takes a considerable amount of time (sometimes about several minutes) for the charge induced at the interface between the substrate S and the mask M to disappear rather than the electrostatic attraction therebetween. In particular, when the mask M is adsorbed to the electrostatic chuck 24 , a sufficiently high voltage (third voltage) is usually applied to ensure the adsorption and shorten the adsorption time. Separation of the mask from the third voltage It takes a considerable amount of time for it to become possible.

In the present embodiment, in order to prevent the overall process time Tact from increasing due to the time required for the separation of the mask M from the electrostatic chuck 24 , after the mask M is adsorbed to the electrostatic chuck 24 , Then, the voltage applied to the electrode portion of the electrostatic chuck 24 is lowered to the fourth voltage at a predetermined time point.

In the embodiment shown in FIG. 4D , the voltage applied to the first adsorption unit 41 to the third adsorption unit 43 of the electrostatic chuck 24 is simultaneously lowered to the fourth voltage, but the present invention is not limited thereto. Also, the time of lowering to the fourth voltage or the magnitude of the applied fourth voltage may be different for each adsorption unit. For example, you may lower|reduce to a 4th voltage sequentially toward the 3rd adsorption|suction part 43 from the 1st adsorption|suction part 41.

In this way, while the mask M is adsorbed to the electrostatic chuck 24 with the substrate S interposed therebetween, the deposition material evaporated from the deposition source 25 is formed on the substrate S through the mask M. The process is done. In the present embodiment, it has been described that the mask M is held by the electrostatic attraction force by the electrostatic chuck 24 , but the present invention is not limited thereto, and the metal mask ( By applying a magnetic force to M), you may make the mask M closely_contact|adhere to the board|substrate S more reliably.

After the film forming process is completed in a state in which the substrate S and the mask M are adsorbed to the electrostatic chuck 24 , the voltage controller 32 adjusts the voltage applied to the electrode of the electrostatic chuck 24 to the fourth voltage ΔV4 . ) to the fifth voltage ΔV5. Here, the fifth voltage ΔV5 is applied only to the mask M adsorbed with the substrate S interposed therebetween while maintaining the state of adsorption of the substrate S by the electrostatic chuck 24 as shown in FIG. 4E . This is the mask separation voltage for separation. Accordingly, the fifth voltage ΔV5 is applied when the mask M is attracted to the electrostatic chuck 24 as well as the third voltage ΔV3 applied when the mask M is attracted to the electrostatic chuck 24 . It is a voltage lower than the fourth voltage ΔV4. In addition, the fifth voltage ΔV5 is a voltage of a magnitude at which the adsorption state of the substrate S by the electrostatic chuck 24 can be maintained even when the mask M is separated.

For example, the fifth voltage ΔV5 may be a voltage having substantially the same magnitude as the above-described second voltage ΔV2. However, the present embodiment is not limited thereto, and as long as only the mask M can be separated while maintaining the adsorption state of the substrate S by the electrostatic chuck 24 , the fifth voltage ΔV5 is the second voltage It may be higher than (ΔV2) or lower than the second voltage (ΔV2). However, even in this case, the fifth voltage ΔV5 is lower than the third voltage ΔV3 as well as the fourth voltage ΔV4.

When the voltage applied to the electrostatic chuck 24 is lowered to a fifth voltage ΔV5 that is substantially equal to the second voltage ΔV2, the amount of charge induced in the mask M in response thereto is also shown in FIG. 4E , , decreases to substantially the same extent as when the second voltage ΔV2 is applied. As a result, the adsorption state of the substrate S by the electrostatic chuck 24 is maintained, but the adsorption state of the mask M cannot be maintained, and thus the substrate S is separated from the electrostatic chuck 24 .

In the embodiment shown in FIG. 4E , the voltage applied to the first adsorption unit 41 to the third adsorption unit 43 of the electrostatic chuck 24 is simultaneously lowered to the fifth voltage ΔV5, but the present invention is not limited thereto, and the timing at which the fifth voltage ΔV5 is lowered or the magnitude of the applied fifth voltage may be different for each adsorption unit. For example, you may lower|reduce to 5th voltage (ΔV5) sequentially from the 1st adsorption|suction part 41 toward the 3rd adsorption|suction part 43.

Then, in a state in which the mask M is separated and only the substrate S is adsorbed and held by the electrostatic chuck 24 , the voltage controller 32 adjusts the voltage applied to the electrode of the electrostatic chuck 24 to a fifth voltage ΔV5 . ) to the sixth voltage ΔV6. Here, the sixth voltage ΔV6 is a substrate separation voltage for separating the substrate S adsorbed to the electrostatic chuck 24 from the electrostatic chuck 24 as shown in FIG. 4F . Accordingly, the sixth voltage ΔV6 is lower than the fifth voltage ΔV5 applied when only the substrate S is being sucked and held by the electrostatic chuck 24 .

For example, the voltage controller 32 applies a zero (0) voltage (ie, turns off) to the electrode part of the electrostatic chuck 24 as the sixth voltage ΔV6 or applies a voltage of the opposite polarity to the sixth voltage. (ΔV6) can be applied. As a result, the polarization charge induced in the substrate S is removed, and the substrate S is separated from the electrostatic chuck 24 . In addition, in the embodiment shown in FIG. 4F , the voltage applied to the first adsorption unit 41 to the third adsorption unit 43 of the electrostatic chuck 24 is simultaneously set to zero (0), that is, the sixth voltage ΔV6. Although shown to be changed, the present invention is not limited thereto, and the time point for changing to zero (0) may be changed for each adsorption unit. For example, you may lower to zero (0) sequentially from the 1st adsorption|suction part 41 toward the 3rd adsorption|suction part 43.

As described with reference to FIGS. 4E and 4F , in the process of separating the substrate S and the mask M from the electrostatic chuck 24 , the mask M is first separated and then the substrate S is separated. However, the present invention is not limited thereto, and when the substrate S and the mask M are separated from the electrostatic chuck 24 , the substrate S and the mask M may be simultaneously separated from the electrostatic chuck 24 . . In this case, the voltage controller 32 adjusts the voltage applied to the electrode of the electrostatic chuck 24 to the fourth voltage ΔV4 so that the substrate S and the mask M can be separated from the electrostatic chuck 24 together. It can be directly lowered to zero (0), or it can be set to a voltage of the opposite polarity.

Hereinafter, with reference to FIG. 5 , the control of the voltage applied to the electrode part or the sub-electrode part of the electrostatic chuck 24 in the process of adsorbing and holding the substrate S and the mask M by the electrostatic chuck 24 is performed. about it.

First, in order to adsorb the substrate S to the electrostatic chuck 24 , a first voltage ΔV1 is applied to the electrode part or the sub-electrode part of the electrostatic chuck 24 at a predetermined time t1 .

The first voltage ΔV1 has a size sufficient to obtain an electrostatic adsorption force sufficient to adsorb the substrate S to the electrostatic chuck 24 , and the first voltage is applied to the electrode part or the sub-electrode part of the electrostatic chuck 24 . It is preferable that the voltage be as large as possible in order to shorten the time taken from when the polarization charge is generated on the substrate S. For example, the maximum voltage ΔVmax that can be applied by the voltage applying unit 31 may be applied.

Then, polarized charges are induced in the substrate S by the applied first voltage and the substrate S is adsorbed to the electrostatic chuck 24 with sufficient electrostatic attraction force (t=t2), and then the electrostatic chuck 24 is The voltage applied to the electrode part or the sub-electrode part is lowered to the second voltage ΔV2. The second voltage ΔV2 may be, for example, the lowest voltage ΔVmin capable of maintaining the state in which the substrate S is adsorbed to the electrostatic chuck 24 .

Next, in order to adsorb the mask M to the electrostatic chuck 24 with the substrate S interposed therebetween, the voltage applied to the electrode part or the sub-electrode part of the electrostatic chuck 24 is increased to a third voltage ΔV3 . (t=t3). The third voltage ΔV3 is a voltage for adsorbing the mask M to the electrostatic chuck 24 with the substrate S interposed therebetween. Therefore, it is more preferable that the voltage applying unit 31 is the maximum voltage (ΔVmax) that can be applied.

In the present embodiment, in order to shorten the time required to separate the substrate S and the mask M from the electrostatic chuck 24 after the film forming process, the voltage applied to the electrode part or the sub-electrode part of the electrostatic chuck 24 is reduced. Instead of maintaining the third voltage ΔV3, the voltage is lowered to a smaller fourth voltage ΔV4 (t=t4). However, since the mask M must be able to maintain a state of being adsorbed to the electrostatic chuck 24 with the substrate S interposed therebetween, the fourth voltage ΔV4 is applied when only the substrate S is adsorbed to the electrostatic chuck 24 . Preferably, the voltage is equal to or greater than the second voltage ΔV2 required to maintain the state.

After the film forming process is completed (t5), in order to separate the mask M from the electrostatic chuck 24 , first, the voltage applied to the electrode part of the electrostatic chuck 24 can be maintained in the adsorption state of only the substrate S. It is lowered to the fifth voltage (ΔV5). The fifth voltage ΔV4 is a voltage substantially the same as the second voltage ΔV2 for maintaining a state in which the mask M is separated and only the substrate S is adsorbed to the electrostatic chuck 24 . For example, the fifth voltage ΔV5 is preferably a minimum voltage ΔVmin for maintaining a state in which the mask M is separated and only the substrate S is adsorbed to the electrostatic chuck 24 .

Accordingly, after the mask M is separated, the voltage applied to the electrode portion of the electrostatic chuck 24 is lowered to zero (ie, turned off) or a voltage of the opposite polarity is applied (t=t6). ). Thereby, the polarization charge induced in the substrate S is removed, so that the substrate S may be separated from the electrostatic chuck 24 .

In another embodiment for separating the substrate S and the mask M from the electrostatic chuck 24, after the film forming process is completed, the step of lowering the voltage to the fifth voltage ΔV5 is omitted, and the substrate S and the mask M are omitted. M) is simultaneously separated from the electrostatic chuck 24 . To this end, the voltage applying unit 31 is turned off or a voltage having an opposite polarity is applied to the electrode unit or the sub-electrode unit of the electrostatic chuck 24 . Accordingly, the substrate S and the mask M are simultaneously separated from the electrostatic chuck 24, and then, the substrate and the mask are separated using a separate mechanism.

<Film forming process>

Hereinafter, a film forming method employing voltage control of the electrostatic chuck according to the present embodiment will be described.

In a state where the mask M is supported by the mask holding unit 23 in the vacuum container 21 , the substrate is moved into the vacuum container 21 of the film forming apparatus 11 by the transfer robot 14 of the transfer chamber 13 . is brought in

The hand of the transport robot 14 that has entered the vacuum container 21 is lowered to place the substrate S on the support portion of the substrate support unit 22 .

Then, after the electrostatic chuck 24 descends toward the substrate S and sufficiently approaches or comes into contact with the substrate S, a first voltage ΔV1 is applied to the electrostatic chuck 24 to adsorb the substrate S. .

In one embodiment of the present invention, the voltage applied to the electrostatic chuck 24 is removed after adsorption of the substrate to the electrostatic chuck 24 is completed in order to maximize the time required to separate the substrate from the electrostatic chuck 24 . The voltage is lowered from the first voltage ΔV1 to the second voltage ΔV2. Even if the voltage applied to the electrostatic chuck 24 is lowered to the second voltage ΔV2, it takes time until the polarized charge induced in the substrate by the first voltage ΔV1 is discharged. 24) can maintain the adsorption force to the substrate.

In a state in which the substrate S is adsorbed to the electrostatic chuck 24 , the substrate S is lowered toward the mask M in order to measure the relative displacement of the substrate S with respect to the mask M . In another embodiment of the present invention, in order to reliably prevent the substrate from falling off from the electrostatic chuck 24 during the lowering process of the substrate adsorbed to the electrostatic chuck 24, after the lowering process of the substrate is completed (that is, to be described later) (just before the alignment process starts), the voltage applied to the electrostatic chuck 24 is reduced to a second voltage ΔV2.

When the board|substrate S descends to a measurement position, the alignment mark formed in the board|substrate S and the mask M is image|photographed with the camera 20 for alignment, and the relative position shift of a board|substrate and a mask is measured. In another embodiment of the present invention, in order to further increase the precision of the measurement process of the relative positions of the substrate and the mask, the voltage applied to the electrostatic chuck 24 is applied to the electrostatic chuck 24 after the measurement process for alignment is completed (during the alignment process). lower the voltage That is, by photographing the alignment marks between the substrate and the mask in a state in which the substrate is strongly attracted to the electrostatic chuck 24 by the first voltage ΔV1 (the substrate is held more flat), the precision of the measurement process can be improved. have.

As a result of the measurement, if it is determined that the displacement of the substrate relative to the mask exceeds the threshold, the substrate S in the state of being adsorbed to the electrostatic chuck 24 is moved in the horizontal direction (XYθ direction) to position the substrate with respect to the mask. Adjust (align). In another embodiment of the present invention, after the positioning process is completed, the voltage applied to the electrostatic chuck 24 is lowered to the second voltage ΔV2. Through this, precision can be further increased throughout the alignment process (relative position measurement and position adjustment).

After the alignment process, the mask M is adsorbed to the electrostatic chuck 24 over the substrate S. To this end, a third voltage ΔV3 having a magnitude greater than or equal to the second voltage is applied to the electrode part or the sub-electrode part of the electrostatic chuck 24 .

After the mask M adsorption process is completed, the voltage applied to the electrode part or the sub-electrode part of the electrostatic chuck 24 is a voltage capable of maintaining the state in which the substrate and the mask are adsorbed to the electrostatic chuck 24 , It is lowered to the fourth voltage ΔV4. Through this, it is possible to shorten the time required to separate the substrate S and the mask M from the electrostatic chuck 24 after the film formation process is completed.

Then, the shutter of the deposition source 25 is opened and the deposition material is deposited on the substrate S through a mask.

After depositing to a desired thickness, the mask M is separated by lowering the voltage applied to the electrode part or the sub-electrode part of the electrostatic chuck 24 to a fifth voltage, and only the substrate is adsorbed to the electrostatic chuck 24 . , the substrate is raised by the electrostatic chuck Z actuator 28 . Here, the fifth voltage ΔV5 is a size for maintaining the state in which the mask M is separated and only the substrate S is adsorbed to the electrostatic chuck 24 , and is substantially the same as the second voltage.

Then, the hand of the transport robot 14 enters the vacuum container 21 of the film forming apparatus 11, and a voltage of zero (0) or reverse polarity is applied to the electrode part or the sub-electrode part of the electrostatic chuck 24 ( t6) The substrate is separated from the electrostatic chuck 24 . Thereafter, the deposition-completed substrate is unloaded from the vacuum container 21 by the transport robot 14 .

In the above description, the film forming apparatus 11 has a configuration of a so-called bottom-up deposition method (Depo-up) in which the film is formed in a state in which the film forming surface of the substrate S faces downward in the vertical direction, but it is not limited thereto, and the substrate (S) may be arranged in a state in which it stands upright on the side surface of the vacuum container 21, and the film formation may be performed in a state in which the film formation surface of the substrate S is parallel to the direction of gravity.

<Method of manufacturing electronic device>

Next, an example of the manufacturing method of the electronic device using the film-forming apparatus of this embodiment is demonstrated. Hereinafter, the structure and manufacturing method of an organic electroluminescent display are illustrated as an example of an electronic device.

First, an organic EL display device to be manufactured will be described. Fig. 6(a) is an overall view of the organic EL display device 60, and Fig. 6(b) shows a cross-sectional structure of one pixel.

As shown in FIG. 6A , in the display area 61 of the organic EL display device 60, a plurality of pixels 62 including a plurality of light emitting elements are arranged in a matrix form. Although details will be described later, each of the light emitting devices has a structure including an organic layer sandwiched between a pair of electrodes. In addition, the pixel here refers to the minimum unit which enables the display of a desired color in the display area 61. As shown in FIG. In the case of the organic EL display device according to the present embodiment, the pixel 62 is constituted by a combination of the first light emitting element 62R, the second light emitting element 62G, and the third light emitting element 62B that emit light different from each other. has been The pixel 62 is often composed of a combination of a red light emitting device, a green light emitting device, and a blue light emitting device, but may be a combination of a yellow light emitting device, a cyan light emitting device, and a white light emitting device. not.

Fig. 6(b) is a schematic partial cross-sectional view taken along line AB of Fig. 6(a). The pixel 62 has an organic EL device having an anode 64 , a hole transport layer 65 , light emitting layers 66R, 66G, and 66B, an electron transport layer 67 , and a cathode 68 on a substrate 63 . . Among them, the hole transport layer 65, the light emitting layers 66R, 66G, and 66B, and the electron transport layer 67 correspond to the organic layer. In this embodiment, the light emitting layer 66R is an organic EL layer emitting red light, the light emitting layer 66G is an organic EL layer emitting green color, and the light emitting layer 66B is an organic EL layer emitting blue light. The light-emitting layers 66R, 66G, and 66B are formed in patterns corresponding to light-emitting elements (sometimes referred to as organic EL elements) emitting red, green, and blue, respectively. In addition, the anode 64 is formed separately for each light emitting element. The hole transport layer 65, the electron transport layer 67, and the cathode 68 may be formed in common with the plurality of light emitting devices 62R, 62G, and 62B, or may be formed for each light emitting device. In addition, in order to prevent the anode 64 and the cathode 68 from being short-circuited by foreign substances, an insulating layer 69 is provided between the anodes 64 . In addition, since the organic EL layer is deteriorated by moisture and oxygen, a protective layer 70 for protecting the organic EL element from moisture and oxygen is provided.

Although the hole transport layer 65 or the electron transport layer 67 is shown as one layer in FIG. 6(b), depending on the structure of the organic EL display device, it may be formed of a plurality of layers including the hole blocking layer or the electron blocking layer. may be In addition, a hole injection layer having an energy band structure capable of smoothly injecting holes from the anode 64 to the hole transport layer 65 may be formed between the anode 64 and the hole transport layer 65 . . Similarly, an electron injection layer may be formed between the cathode 68 and the electron transport layer 67 .

Next, an example of the manufacturing method of an organic electroluminescent display apparatus is demonstrated concretely.

First, a substrate 63 on which a circuit (not shown) for driving an organic EL display device and an anode 64 are formed is prepared.

An acrylic resin is formed by spin coating on the substrate 63 on which the anode 64 is formed, and the acrylic resin is patterned to form an opening in the portion where the anode 64 is formed by lithography to form the insulating layer 69 . This opening corresponds to the light emitting region in which the light emitting element actually emits light.

The substrate 63 patterned with the insulating layer 69 is loaded into the first organic material film forming apparatus, the substrate is held by an electrostatic chuck, and a hole transport layer 65 is formed as a common layer over the anode 64 of the display area. do. The hole transport layer 65 is formed by vacuum deposition. In reality, since the hole transport layer 65 is formed in a size larger than that of the display area 61, a high-precision mask is not required.

Next, the substrate 63 formed up to the hole transport layer 65 is loaded into the second organic material film forming apparatus, and is held by an electrostatic chuck. The substrate and the mask are aligned, the mask is held over the substrate with an electrostatic chuck, and a red light emitting layer 66R is formed on a portion of the substrate 63 where a red light emitting element is placed.

Similar to the film formation of the light emitting layer 66R, the light emitting layer 66G emitting green light is formed by the third organic material film forming apparatus, and further, the light emitting layer 66B which emits blue light is formed by the fourth organic material film forming apparatus. After the formation of the light emitting layers 66R, 66G, and 66B is completed, an electron transporting layer 67 is formed over the entire display area 61 by the fifth organic material film forming apparatus. The electron transport layer 67 is formed as a layer common to the light emitting layers 66R, 66G, and 66B of the three colors.

A cathode 68 is formed by moving the substrate formed up to the electron transport layer 67 to a metallic deposition material film forming apparatus.

According to the present invention, the voltage applied to the electrostatic chuck 24 is lowered in advance at a predetermined time after the substrate and/or the mask is adsorbed to the electrostatic chuck 24 . After the film formation process is completed, when the substrate and the mask are sequentially separated from the electrostatic chuck, the mask is first separated from the electrostatic chuck 24 by lowering the voltage to a voltage capable of separating only the mask while maintaining adsorption to the substrate, and then The substrate is separated from the electrostatic chuck 24 by lowering the voltage to zero (ie, turning it off) or applying a voltage of the opposite polarity to the electrostatic chuck 24 . As a result, the time required to separate the substrate and/or the mask from the electrostatic chuck 24 can be shortened, and the processing time can be shortened.

After that, it is transferred to a plasma CVD apparatus to form a protective layer 70 , thereby completing the organic EL display apparatus 60 .

From the time the substrate 63 on which the insulating layer 69 is patterned is loaded into the film forming apparatus until the film formation of the protective layer 70 is completed, when exposed to an atmosphere containing moisture or oxygen, a light emitting layer made of an organic EL material is It may be deteriorated by moisture or oxygen. Therefore, in this example, carrying-in and carrying-out of the board|substrate between film-forming apparatuses are performed in a vacuum atmosphere or inert gas atmosphere.

The above embodiment shows an example of the present invention, and the present invention is not limited to the configuration of the above embodiment, and may be appropriately modified within the scope of the technical idea.

11: film forming device
21: vacuum vessel
22: substrate support unit
23: mask support unit
24: electrostatic chuck
30: electrostatic chuck system
31: voltage applying unit
32: voltage control unit

Claims (31)

an electrostatic chuck including an electrode part;
a voltage applying unit for applying a voltage to the electrode unit of the electrostatic chuck;
A voltage control unit for controlling the application of a voltage by the voltage applying unit,
The voltage control unit may include a third voltage for adsorbing a second adsorbed body to the electrostatic chuck with a first adsorbed body interposed therebetween, and the third voltage is applied to the electrode unit to interpose the first adsorbed body therebetween. and a fourth voltage smaller than the third voltage for maintaining a state in which the second adsorbent adsorbed to the electrostatic chuck is adsorbed to the electrostatic chuck, and a fourth voltage lower than the third voltage in a state in which the first adsorbent is adsorbed to the electrostatic chuck. and controlling the voltage applying unit to apply a fifth voltage for separating a second adsorbed body from the electrostatic chuck to the electrode unit.
The electrostatic chuck system of claim 1 , wherein the fifth voltage is smaller than the third voltage.
The electrostatic chuck system of claim 2 , wherein the voltage controller controls the voltage applying unit to apply a sixth voltage for separating the first adsorbed body from the electrostatic chuck after the fifth voltage is applied. .
The electrostatic chuck system of claim 3 , wherein the sixth voltage is smaller than the fifth voltage.
The electrostatic chuck system of claim 4 , wherein the sixth voltage is a zero voltage or a voltage having a reverse polarity.
According to claim 1,
The voltage controller may be configured to apply a second voltage smaller than the first voltage to the electrode to maintain a state in which the first adsorbed material adsorbed to the electrostatic chuck is adsorbed to the electrostatic chuck by applying a first voltage to the electrode unit. controlling the voltage applying unit to apply it to the
The electrostatic chuck system according to claim 1, wherein the first adsorbed body is a substrate, and the second adsorbed body is a mask.
an electrostatic chuck including an electrode part;
a voltage applying unit for applying a voltage to the electrode unit of the electrostatic chuck;
A voltage control unit for controlling the application of a voltage by the voltage applying unit,
The voltage control unit includes a first voltage for adsorbing a first adsorbed body to the electrostatic chuck, a second voltage lower than the first voltage, and a second adsorbed body to the electrostatic chuck with the first adsorbed body interposed therebetween. The electrostatic chuck system according to claim 1, wherein the voltage applying unit is controlled to sequentially apply a third voltage for adsorbing and a fourth voltage smaller than the third voltage to the electrode unit.
8 . The electrostatic chuck according to claim 7 , wherein the voltage control unit connects a first voltage for adsorbing a first adsorbed body to the electrostatic chuck, a second voltage smaller than the first voltage, and the first adsorbed body to the electrostatic chuck. A third voltage for adsorbing a second adsorbed body, a fourth voltage smaller than the third voltage, and a fifth voltage for separating the second adsorbed body from the electrostatic chuck are sequentially applied to the electrode unit The electrostatic chuck system, characterized in that controlling the voltage applying unit to apply.
9. The electrostatic chuck system of claim 8, wherein the fifth voltage is less than the fourth voltage.
The electrostatic chuck system according to claim 7, wherein the first adsorbed body is a substrate, and the second adsorbed body is a mask.
an electrostatic chuck including an electrode part;
a voltage applying unit for applying a voltage to the electrode unit of the electrostatic chuck;
and a voltage control unit for controlling the voltage application by the voltage application unit,
The voltage control unit includes a first voltage for adsorbing a first adsorbed body to the electrostatic chuck, a second voltage smaller than the first voltage, and a second adsorbed body to the electrostatic chuck with the first adsorbed body interposed therebetween. A third voltage for adsorbing the electrode and a fifth voltage smaller than a third voltage for separating the second adsorbed body from the electrostatic chuck in a state in which the first adsorbed body is adsorbed to the electrostatic chuck are sequentially applied to the electrode unit An electrostatic chuck system, characterized in that controlling the voltage applying unit to apply
The method of claim 11 , wherein the voltage control unit applies a fourth voltage smaller than the third voltage to maintain the adsorption state of the first and second adsorbed bodies after the application of the third voltage. controlling the voltage applying unit to be applied to the electrode unit,
The fifth voltage is less than the fourth voltage.
13. The electrostatic chuck system of claim 12, wherein the fifth voltage has substantially the same magnitude as the second voltage.
12 . The method of claim 11 , wherein the voltage control unit applies a sixth voltage smaller than the fifth voltage to the electrode unit in order to separate the first adsorbed body from the electrostatic chuck after application of the fifth voltage. The electrostatic chuck system, characterized in that for controlling the voltage applying unit.
15. The electrostatic chuck system of claim 14, wherein the sixth voltage is a zero voltage or a voltage having an opposite polarity.
12. The method of claim 11, wherein the electrode part comprises a comb-shaped first electrode to which a potential of a first polarity is applied, and a comb-shaped second electrode to which a potential opposite to the first polarity is applied, and has a comb shape. The electrostatic chuck system, characterized in that the comb portion of the first electrode and the comb portion of the second electrode having a comb shape are alternately arranged with each other.
A film forming apparatus for forming a film on a substrate through a mask, comprising:
An electrostatic chuck system for adsorbing and separating a substrate as a first adsorbent and a mask as a second adsorbent,
The electrostatic chuck system is a film forming apparatus, characterized in that the electrostatic chuck system according to any one of claims 11 to 16.
applying a first voltage to an electrode portion of the electrostatic chuck to adsorb a first adsorbent to the electrostatic chuck;
applying a second voltage smaller than the first voltage to the electrode part;
applying a third voltage to the electrode unit to the electrostatic chuck to adsorb a second adsorbent with the first adsorbed therebetween;
and applying a fifth voltage smaller than the third voltage to the electrode unit to separate the second adsorbent from the electrostatic chuck while the first adsorbed body is adsorbed to the electrostatic chuck. adsorption and separation method.
19. The method of claim 18,
Between the step of applying the third voltage and the step of applying the fifth voltage, a fourth voltage smaller than the third voltage is applied to the electrode part in order to maintain the adsorption state of the first adsorbed body and the second adsorbed body. Further comprising the step of authorizing,
The fifth voltage is adsorption and separation method, characterized in that less than the fourth voltage.
20. The method of claim 19, wherein the fifth voltage has substantially the same magnitude as the second voltage.
19. The method of claim 18, further comprising, after the applying of the fifth voltage, applying a sixth voltage to the electrode unit for separating the first adsorbed body from the electrostatic chuck,
The sixth voltage is adsorption and separation method, characterized in that less than the fifth voltage.
22. The method of claim 21, wherein the sixth voltage is a zero voltage or a voltage having an opposite polarity.
A method of depositing a deposition material on a substrate through a mask, comprising:
bringing the mask into the vacuum container;
loading the substrate into the vacuum container;
adsorbing the substrate to the electrostatic chuck by applying a first voltage to the electrode part of the electrostatic chuck;
applying a second voltage smaller than the first voltage to the electrode part;
adsorbing the mask to the electrostatic chuck by applying a third voltage equal to or higher than the second voltage to the electrode unit, with the substrate interposed therebetween;
forming a deposition material on the substrate through the mask by evaporating the deposition material while the substrate and the mask are adsorbed to the electrostatic chuck;
and applying a fifth voltage to the electrode unit to separate the mask from the electrostatic chuck while the substrate is adsorbed to the electrostatic chuck;
The fifth voltage is smaller than the third voltage.
24. The method of claim 23,
Between the application of the third voltage and the application of the fifth voltage, the method further includes applying a fourth voltage smaller than the third voltage to the electrode unit to maintain the adsorption state between the substrate and the mask. do,
The fifth voltage is smaller than the fourth voltage.
25. The method of claim 24, wherein the fifth voltage has substantially the same magnitude as the second voltage.
24. The method of claim 23, further comprising, after applying the fifth voltage, applying a sixth voltage for separating the substrate from the electrostatic chuck to the electrode unit;
The sixth voltage is smaller than the fifth voltage.
27. The method of claim 26, wherein the sixth voltage is a zero voltage or a voltage having an opposite polarity.
28. A method of manufacturing an electronic device, characterized in that the electronic device is manufactured by using the film forming method according to any one of claims 23 to 27. an electrostatic chuck including an electrode part;
a voltage applying unit for applying a voltage to the electrode unit of the electrostatic chuck;
In a state in which the first adsorbed body is adsorbed to the electrostatic chuck, the voltage applying unit applies an adsorption voltage to the electrode unit for adsorbing a second adsorbed body to the electrostatic chuck with the first adsorbed body interposed therebetween; ,
applying a holding voltage smaller than the adsorption voltage to the electrode unit to maintain the state in which the first and second adsorbed bodies are adsorbed to the electrostatic chuck;
a peeling voltage for separating the second adsorbed body from the first adsorbed body in a state in which the first adsorbed body and the second adsorbed body are adsorbed to the electrostatic chuck; The electrostatic chuck system, characterized in that applied to the electrode part.
an electrostatic chuck including an electrode part;
a voltage applying unit for applying a voltage to the electrode unit of the electrostatic chuck;
a voltage control unit for controlling the application of a voltage by the voltage applying unit;
The voltage control unit may be configured to be absorbed by the electrostatic chuck when a first voltage is applied to the electrode unit, and a second voltage smaller than the first voltage is applied to the electrode unit to maintain a state of being adsorbed to the electrostatic chuck. a third voltage for adsorbing a second adsorbent to the electrostatic chuck with a complex interposed therebetween; and for separating the second adsorbed body from the electrostatic chuck while the first adsorbed body is adsorbed to the electrostatic chuck The electrostatic chuck system according to claim 1, wherein the voltage applying unit is controlled to apply a fifth voltage to the electrode unit. an electrostatic chuck including an electrode part;
a voltage applying unit for applying a voltage to the electrode unit of the electrostatic chuck;
The voltage applying unit may be configured to be absorbed by the electrostatic chuck when a first voltage is applied to the electrode, and a second voltage smaller than the first voltage is applied to the electrode to maintain a state of being absorbed by the electrostatic chuck. applying an adsorption voltage for adsorbing a second adsorbent to the electrostatic chuck with the complex interposed therebetween,
a peeling voltage for separating the second adsorbed body from the first adsorbed body in which the first adsorbed body and the second adsorbed body are adsorbed to the electrostatic chuck; applied to the electrode
Electrostatic chuck system, characterized in that.

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