KR102419064B1 - Electrostatic chuk system, film formation apparatus, suction method, film formation method, and manufacturing method of electronic device - Google Patents

Abstract

An electrostatic chuck system according to the present invention is an electrostatic chuck system for adsorbing an adsorbent, comprising: an electrostatic chuck comprising an adsorption surface for adsorbing the adsorbed body and an electrode unit; a potential difference applying unit for applying a potential difference to the electrode unit; and a magnetic force generating unit disposed on the opposite side of the suction surface of the chuck, and a driving mechanism for moving the magnetic force generating unit in a direction including a first direction parallel to the suction surface of the electrostatic chuck.

Description

Electrostatic chuck system, film forming apparatus, adsorption method, film forming method and manufacturing method of electronic device

The present invention relates to an electrostatic chuck system, a film forming apparatus, an adsorption method, a film forming method, and a method of manufacturing an electronic device.

In the manufacture of an organic EL display device (organic EL display), when an organic light emitting element (organic EL element; OLED) constituting the organic EL display device is formed, the deposition material evaporated from the deposition source of the film forming device is used as a pixel pattern. By depositing on the substrate through the formed mask, an organic material layer or a metal layer is formed.

In the deposition apparatus of the deposition method (depo-up), the deposition source is installed below the vacuum container of the deposition apparatus, the substrate is disposed on the top of the vacuum container, and deposition is performed on the lower surface of the substrate. In the vacuum container of this upward deposition type film forming apparatus, since only the periphery of the lower surface of the substrate is held and supported by the substrate holder, the substrate sags by its own weight, which is one factor that lowers the deposition accuracy. is becoming Even in a film forming apparatus of a method other than the top-up deposition method, there is a possibility that the substrate may sag due to its own weight.

A technique using an electrostatic chuck is being studied as a method for reducing the sagging of the substrate due to its own weight. That is, sagging of the substrate can be reduced by adsorbing the upper surface of the substrate over the entire surface with the electrostatic chuck.

Patent Document 1 (Patent Publication No. 2007-0010723) proposes a technique for adsorbing a substrate and a mask with an electrostatic chuck.

Patent Publication No. 2007-0010723

However, in the prior art, when a mask is adsorbed over a substrate with an electrostatic chuck, there is a problem in that wrinkles remain on the mask after adsorption.

An object of the present invention is to satisfactorily adsorb both the first adsorbed body and the second adsorbed body to the electrostatic chuck.

An electrostatic chuck system according to a first aspect of the present invention is an electrostatic chuck system for adsorbing an adsorbent. a unit, a magnetic force generating unit disposed on a side opposite to the adsorption surface of the electrostatic chuck, and a driving mechanism for moving the magnetic force generating unit in a direction including a first direction parallel to the adsorption surface of the electrostatic chuck do.

A film forming apparatus according to a second aspect of the present invention. A film forming apparatus for forming a film on a substrate through a mask, comprising: an electrostatic chuck system for adsorbing a substrate as a first adsorbent and a mask as a second adsorbent, the electrostatic chuck system according to the first aspect of the present invention It is characterized in that the electrostatic chuck system according to the.

An adsorption method according to a third aspect of the present invention is a method for adsorbing an adsorbent, comprising: a first adsorption step of adsorbing a first adsorbed body by applying a first potential difference to an electrode portion of an electrostatic chuck; A suction step of attracting at least a portion of a second adsorbed body by a magnetic force from a magnetic force generating unit, and applying a second potential difference equal to or different from the first potential difference to the electrode unit, the magnetic force generating unit and a second adsorption step of adsorbing the second adsorbed body with the first adsorbed body interposed therebetween by moving it in a direction including a direction parallel to the adsorption surface of the electrostatic chuck.

A film formation method according to a fourth aspect of the present invention is a film formation method of depositing a deposition material on a substrate through a mask, comprising: loading the mask into a vacuum container; loading the substrate into the vacuum container; a first adsorption step of adsorbing the substrate to the electrostatic chuck by applying a first potential difference to the part; While applying a second potential difference equal to or different from the first potential difference to the electrode unit, the magnetic force generating unit is moved in a direction including a direction parallel to the suction surface of the electrostatic chuck, and the electrostatic chuck has the substrate interposed therebetween. a second adsorption step of adsorbing a mask; and evaporating the deposition material while the substrate and the mask are adsorbed to the electrostatic chuck to form a deposition material on the substrate through the mask. .

A method for manufacturing an electronic device according to a fifth aspect of the present invention is characterized in that the electronic device is manufactured using the film forming method according to the fourth aspect of the present invention.

According to the present invention, both the first adsorbed body and the second adsorbed body can be satisfactorily adsorbed without leaving wrinkles by the electrostatic chuck.

BRIEF DESCRIPTION OF THE DRAWINGS It is a schematic diagram of a part of the manufacturing apparatus of an electronic device.
2 is a schematic diagram of a film forming apparatus according to an embodiment of the present invention.
3A to 3D are conceptual views and schematic diagrams of an electrostatic chuck system according to an embodiment of the present invention.
4A to 4C are schematic diagrams illustrating a method for adsorbing a substrate and a mask to an electrostatic chuck.
It is a schematic diagram which shows an electronic device.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments and examples of the present invention will be described with reference to the drawings. However, the following embodiments and examples are merely illustrative of preferred configurations of the present invention, and the scope of the present invention is not limited to these configurations. In addition, in the following description, the hardware configuration and software configuration of the device, processing flow, manufacturing conditions, size, material, shape, etc. are intended to limit the scope of the present invention to these unless specifically stated otherwise. not.

The present invention can be applied to an apparatus for forming a film by depositing various materials on the surface of a substrate, and can be preferably applied to an apparatus for forming a thin film (material layer) of a desired pattern by vacuum deposition. As the material of the substrate, any material such as glass, a film made of a polymer material, or a metal can be selected. For example, the substrate may be a substrate in which a film such as polyimide is laminated on a glass substrate. Moreover, arbitrary materials, such as an organic material and a metallic material (metal, metal oxide, etc.), can be selected also as a vapor deposition material. In addition to the vacuum deposition apparatus described in the following description, the present invention can also be applied to a film forming apparatus including a sputtering apparatus or a CVD (Chemical Vapor Deposition) apparatus. The technique of this invention is specifically applicable to manufacturing apparatuses, such as an organic electronic device (For example, an organic light emitting element, a thin film solar cell), an optical member. Among them, an apparatus for manufacturing an organic light emitting device that forms an organic light emitting device by evaporating a deposition material and depositing it on a substrate through a mask is one of preferred application examples of the present invention.

<Electronic device manufacturing apparatus>

BRIEF DESCRIPTION OF THE DRAWINGS It is a top view which shows typically the structure of a part of the manufacturing apparatus of an electronic device.

The manufacturing apparatus of FIG. 1 is used for manufacture of the display panel of the organic electroluminescent display for smartphones, for example. In the case of a display panel for a smartphone, for example, a substrate of the 4.5th generation (about 700 mm × about 900 mm), a full size of the 6th generation (about 1500 mm × about 1850 mm), or a half-cut size (about 1500 mm × After film formation for formation of an organic EL element is performed on a substrate of about 925 mm in diameter, the substrate is cut out to produce a plurality of small-sized panels.

An electronic device manufacturing apparatus generally includes a plurality of cluster apparatuses 1 and a relay device connecting between the cluster apparatuses 1 .

The cluster apparatus 1 includes a plurality of film forming apparatuses 11 for performing a process (eg, film formation) on a substrate S, a plurality of mask stock apparatuses 12 for accommodating the masks M before and after use; A transfer chamber 13 disposed at the center thereof is provided. The transfer chamber 13 is connected to each of a plurality of film forming apparatuses 11 and a mask stock apparatus 12 as shown in FIG. 1 .

In the transfer chamber 13 , a transfer robot 14 that transfers a substrate and a mask is disposed. The transport robot 14 transports the substrate S from the pass chamber 15 of the relay device arranged on the upstream side to the film forming device 11 . In addition, the transfer robot 14 transfers the mask M between the film forming apparatus 11 and the mask stock apparatus 12 . The transfer robot 14 may be, for example, a robot having a structure in which a robot hand holding a substrate S or a mask M is mounted on an articulated arm.

In the film-forming apparatus 11 (also called a vapor deposition apparatus), the vapor deposition material accommodated in the vapor deposition source is heated by a heater, and evaporates, and is vapor-deposited on the board|substrate through a mask. The transfer of the substrate S with the transfer robot 14, adjustment (alignment) of the relative positions of the substrate S and the mask M, fixing of the substrate S on the mask M, and film formation (deposition) ) and the like are performed by the film forming apparatus 11 .

In the mask stock apparatus 12 , a new mask and a used mask to be used in the film forming process in the film forming apparatus 11 are divided and housed in two cassettes. The transfer robot 14 transfers the used mask from the film forming apparatus 11 to a cassette of the mask stock apparatus 12 , and transfers a new mask stored in another cassette of the mask stock apparatus 12 to the film forming apparatus 11 . return to

The cluster device 1 has a pass chamber 15 for transferring the substrate S from the upstream side in the flow direction of the substrate S to the cluster device 1 , and the cluster device 1 on which the film forming process is completed. A buffer chamber 16 for transferring the substrate S to another cluster device on the downstream side is connected. The transfer robot 14 of the transfer chamber 13 receives the substrate S from the pass chamber 15 on the upstream side, and receives one of the film forming apparatuses 11 in the cluster apparatus 1 (eg, the film forming apparatus 11a). ) to return In addition, the transfer robot 14 receives the substrate S on which the film forming process in the cluster apparatus 1 has been completed, from one of the plurality of film forming apparatuses 11 (eg, the film forming apparatus 11b), and is connected to the downstream side. It is transferred to the buffer chamber 16 .

Between the buffer chamber 16 and the pass chamber 15, a turning chamber 17 for changing the direction of the substrate is provided. In the turning chamber 17 , a transfer robot 18 for receiving the substrate S from the buffer chamber 16 , rotating the substrate S by 180 degrees, and transferring the substrate S to the pass chamber 15 is installed. Thereby, the direction of the substrate S becomes the same in the upstream cluster apparatus and the downstream cluster apparatus, and the substrate processing becomes easy.

The pass chamber 15, the buffer chamber 16, and the vortex chamber 17 are so-called relay devices connecting the cluster devices. The relay devices installed on the upstream and/or downstream side of the cluster device include the pass chamber and the buffer chamber. , including at least one of the turning rooms.

The film forming apparatus 11 , the mask stock apparatus 12 , the transfer chamber 13 , the buffer chamber 16 , the swirl chamber 17 and the like are maintained in a high vacuum state during the manufacturing process of the organic light emitting device. The pass chamber 15 is normally maintained in a low vacuum state, but may be maintained in a high vacuum state if necessary.

In the present embodiment, the configuration of the electronic device manufacturing apparatus has been described with reference to FIG. 1 , but the present invention is not limited thereto, and other types of apparatuses or chambers may be provided, and arrangements between these apparatuses or chambers may vary. have.

Hereinafter, the specific structure of the film-forming apparatus 11 is demonstrated.

<Film forming device>

2 is a schematic diagram showing the configuration of the film forming apparatus 11 . In the following description, an XYZ rectangular coordinate system with the vertical direction as the Z direction is used. When the substrate S is fixed parallel to the horizontal plane (XY plane) during film formation, the short side direction (a direction parallel to the short side) of the substrate S is the X direction, and the long side direction (the direction parallel to the long side) of the substrate S is the Y direction. do it with Also, the rotation angle around the Z axis is denoted by θ.

The film forming apparatus 11 includes a vacuum container 21 maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen gas, a substrate support unit 22 installed in the vacuum container 21 , and a mask support unit 23 , , an electrostatic chuck 24 , and an evaporation source 25 .

The substrate holding unit 22 receives and holds the substrate S conveyed by the transfer robot 14 installed in the transfer chamber 13 , and is also called a substrate holder.

A mask support unit 23 is installed under the substrate support unit 22 . The mask holding unit 23 is a means for receiving and holding the mask M transported by the transport robot 14 installed in the transport chamber 13 , and is also called a mask holder.

The mask M has an opening pattern corresponding to the thin film pattern to be formed on the substrate S, and is mounted on the mask support unit 23 . In particular, a mask used for manufacturing an organic EL device for a smartphone is a metal mask having a fine opening pattern formed therein, and is also called FMM (Fine Metal Mask).

An electrostatic chuck 24 for adsorbing and fixing the substrate by electrostatic attraction is installed above the substrate support unit 22 . The electrostatic chuck 24 has a structure in which an electric circuit such as a metal electrode is embedded in a dielectric (eg, ceramic material) matrix. The electrostatic chuck 24 may be a Coulomb force type electrostatic chuck, a Johnson-Rabeck force type electrostatic chuck, or a gradient force type electrostatic chuck. The electrostatic chuck 24 is preferably a gradient force type electrostatic chuck. By using the electrostatic chuck 24 as a gradient force type electrostatic chuck, even when the substrate S is an insulating substrate, it can be favorably absorbed by the electrostatic chuck 24 . For example, in the case where the electrostatic chuck 24 is a Coulomb force type electrostatic chuck, when positive (+) and negative (-) potentials are applied to the metal electrode, the metal is transferred to the adsorbed body such as the substrate S through the dielectric matrix. A polarized charge opposite to the electrode is induced, and the substrate S is adsorbed and fixed to the electrostatic chuck 24 by an electrostatic attraction therebetween. The electrostatic chuck 24 may be formed as a single plate or may be formed to have a plurality of sub-plates. In addition, even when it is formed of one plate, it is also possible to include a plurality of electric circuits therein to control the electrostatic force to be different depending on the position in one plate.

In this embodiment, as will be described later, not only the substrate S (first adsorbed body) but also the mask (M, second adsorbed body) is adsorbed and held by the electrostatic chuck 24 before film formation.

That is, in the present embodiment, the substrate S (first adsorbed body) placed on the lower side of the electrostatic chuck 24 in the vertical direction is sucked and held by the electrostatic chuck 24 , and thereafter, the substrate S (first adsorbed body) is held thereafter. The mask M (second adsorbed body) placed on the opposite side of the electrostatic chuck 24 with the adsorbed body) interposed therebetween is adsorbed and held by the electrostatic chuck 24 over the substrate S (first adsorbed body). In particular, when the mask M is adsorbed over the substrate S by the electrostatic chuck 24 , a part of the mask M is attracted by the magnetic force generating unit 33 , and the magnetic force of the magnetic force generating unit 33 is applied. The part of the mask M pulled by the electrostatic chuck is made to be the starting point of adsorption of the mask M by the electrostatic chuck. Furthermore, by moving the magnetic force generating unit 33 in a direction parallel to the suction surface of the electrostatic chuck 24 , adsorption may be induced in the corresponding direction. This will be described later with reference to FIGS. 3 and 4 .

Although not shown in FIG. 2 , an organic material deposited on the substrate S by providing a cooling mechanism (eg, a cooling plate) for suppressing the temperature rise of the substrate S on the opposite side to the adsorption surface of the electrostatic chuck 24 . It is good also as a structure which suppresses the alteration and deterioration of

The deposition source 25 includes a crucible (not shown) in which the deposition material to be formed on the substrate is accommodated, a heater (not shown) for heating the crucible, and the deposition material scatters to the substrate until the evaporation rate from the deposition source becomes constant. and a shutter (not shown) to prevent it. The deposition source 25 may have various configurations according to uses, such as a point deposition source or a linear deposition source.

Although not shown in Fig. 2, the film forming apparatus 11 includes a film thickness monitor (not shown) and a film thickness calculation unit (not shown) for measuring the film thickness deposited on the substrate.

A substrate Z actuator 26 , a mask Z actuator 27 , an electrostatic chuck Z actuator 28 , a positioning mechanism 29 and the like are provided on the upper outer side (atmospheric side) of the vacuum container 21 . These actuators and the positioning device are composed of, for example, a motor and a ball screw, or a motor and a linear guide. The substrate Z actuator 26 is a driving means for elevating (moving in the Z direction) the substrate supporting unit 22 . The mask Z actuator 27 is a driving means for lifting (moving in the Z direction) the mask support unit 23 . The electrostatic chuck Z actuator 28 is a driving means for lifting (moving in the Z direction) the electrostatic chuck 24 .

The positioning mechanism 29 is a driving means for alignment of the electrostatic chuck 24 . The positioning mechanism 29 moves the entire electrostatic chuck 24 with respect to the substrate support unit 22 and the mask support unit 23 in the X direction, in the Y direction, and rotates θ. In the present embodiment, alignment is performed to adjust the relative positions of the substrate S and the mask M by positioning the electrostatic chuck 24 in the XYθ direction while the substrate S is adsorbed.

On the outer upper surface of the vacuum container 21, in addition to the driving mechanism described above, an alignment camera for photographing the alignment marks formed on the substrate S and the mask M through a transparent window installed on the upper surface of the vacuum container 21 ( 20) may be installed. In this embodiment, the alignment camera 20 is installed at a position corresponding to the diagonal of the rectangular substrate S, the mask M, and the electrostatic chuck 24 or at a position corresponding to four corners of the rectangle. You can do it.

The position adjustment mechanism 29 is based on the positional information of the board|substrate S, 1st to-be-adsorbed body, and the mask M, 2nd to-be-adsorbed body acquired with the camera 20 for alignment, the board|substrate S, 1st to-be-adsorbed body. ) and the mask (M, 2nd to-be-adsorbed body) are moved relatively, and alignment is performed to adjust a position.

The film forming apparatus 11 includes a control unit (not shown). The control part has functions, such as conveyance and alignment of the board|substrate S, control of the vapor deposition source 25, and control of film-forming. The control unit is configurable by, for example, a computer having a processor, memory, storage, I/O, and the like. In this case, the function of the control unit is realized by the processor executing the program stored in the memory or storage. As the computer, a general-purpose personal computer may be used, and an embedded computer or a programmable logic controller (PLC) may be used. Alternatively, some or all of the functions of the control unit may be configured by circuits such as ASICs or FPGAs. Moreover, a control part may be provided for each film-forming apparatus, and it may be comprised so that one control part controls a plurality of film-forming apparatuses.

<Electrostatic chuck system>

An electrostatic chuck system 30 according to the present embodiment will be described with reference to FIGS. 3A to 3D .

3A is a conceptual block diagram of the electrostatic chuck system 30 of the present embodiment, FIG. 3B is a schematic plan view of the electrostatic chuck 24 , and FIG. 3C is an electrostatic chuck 24 and a magnetic force generating unit 33 It is a schematic plan view. 3D is a schematic diagram of the magnetic force generating unit driving mechanism 35 for moving the magnetic force generating unit 33 .

As shown in FIG. 3A , the electrostatic chuck system 30 of the present embodiment includes an electrostatic chuck 24 , a potential difference applying unit 31 , a potential difference control unit 32 , a magnetic force generating unit 33 , and a magnetic force generating unit driving mechanism. (35).

The potential difference applying unit 31 applies a potential difference for generating an electrostatic attraction to the electrode portion of the electrostatic chuck 24 .

The potential difference control unit 32 starts the application of the potential difference and the magnitude of the potential difference applied to the electrode by the potential difference applying unit 31 as the adsorption process of the electrostatic chuck system 30 or the film formation process of the film forming apparatus 11 progresses. The timing, the holding time of the potential difference, the application sequence of the potential difference, and the like are controlled. For example, the potential difference controller 32 may independently control the application of a potential difference to the plurality of sub-electrode units 241 to 249 included in the electrode unit of the electrostatic chuck 24 for each sub-electrode unit. In the present embodiment, the potential difference control unit 32 is implemented separately from the control unit of the film forming apparatus 11 , but the present invention is not limited thereto, and may be integrated into the control unit of the film forming apparatus 11 .

The electrostatic chuck 24 includes an electrode unit that generates an electrostatic adsorption force for adsorbing an object to be adsorbed (eg, the substrate S and the mask M) on the adsorption surface, and the electrode unit includes a plurality of sub-electrode units 241 to 249 . may include. For example, in the electrostatic chuck 24 of the present embodiment, as shown in FIG. 3B , a direction parallel to a long side of the electrostatic chuck 24 (Y direction) and/or a direction parallel to a short side of the electrostatic chuck 24 . It includes a plurality of sub-electrode units 241 to 249 divided along (X direction).

Each sub-electrode unit includes an electrode pair 34 to which positive (first polarity) and negative (second polarity) potentials are applied to generate an electrostatic attraction force. For example, each electrode pair 34 includes a first electrode 341 to which a positive potential is applied and a second electrode 342 to which a negative potential is applied.

The first electrode 341 and the second electrode 342 have a comb shape, respectively, as shown in FIG. 3B . In one sub-electrode portion, each of the comb portions of the first electrode 341 is alternately disposed to face each of the comb portions of the second electrode 342 . In this way, by configuring each of the comb portions of the electrodes 341 and 342 to face each other and to be entangled with each other, the gap between the electrodes to which different potentials are applied can be narrowed, a large unequal electric field is formed, and the gradient force causes the substrate (S) can adsorb.

In the present embodiment, the electrodes 341 and 342 of the sub-electrode units 241 to 249 of the electrostatic chuck 24 have been described as having a comb shape, but the present invention is not limited thereto. As long as it is capable of generating electrostatic attraction, it may have various shapes.

The electrostatic chuck 24 of the present embodiment has a plurality of adsorption portions corresponding to the plurality of sub-electrode portions.

The adsorption unit may be installed to be divided in the long side direction (Y-axis direction) and the short side direction (X-axis direction) of the electrostatic chuck 24 , but is not limited thereto, and is divided only in the long side direction or the short side direction of the electrostatic chuck 24 . it might be The plurality of adsorption units may be implemented as a physically single plate having a plurality of electrode units, or may be implemented as each of a plurality of physically divided plates has one or more electrode units. For example, in the embodiment illustrated in FIG. 3B , each of the plurality of adsorption units may be implemented to correspond to each of the plurality of sub-electrode units, but one adsorption unit may be implemented to include a plurality of sub-electrode units.

That is, by controlling the application of the potential difference to the sub-electrode units 241 to 249 by the potential difference control unit 32 , as will be described later, the direction (Y direction) intersecting the adsorption direction (X direction) of the substrate S The three sub-electrode units 241 , 244 , and 247 arranged as . As long as the substrate can be adsorbed independently to each of the plurality of adsorption units, its specific physical structure and electrical circuit structure may be different.

<Magnetic force generator>

In the electrostatic chuck system 30 of the present invention, when an object to be adsorbed, for example, the mask M, is adsorbed over the substrate S with the electrostatic chuck 24, the position of the starting point of adsorption of the mask M and the adsorption direction are determined. To control, a magnetic force generating unit 33 for applying a magnetic force to the mask M is included. As shown in FIG. 3A , the magnetic force generating unit 33 is disposed on the opposite side of the suction surface of the electrostatic chuck 24 , and may be implemented by a permanent magnet or an electromagnet.

As shown in FIG. 3C , the magnetic force generating unit 33 is preferably formed so that the area when the magnetic force generating unit 33 is projected onto the suction surface of the electrostatic chuck 24 is smaller than the area of the suction surface. .

Accordingly, the magnetic force generating unit 33 applies the magnetic force only to the mask portion at a position corresponding to the magnetic force generating unit 33, rather than simultaneously applying the magnetic force to the entire mask M, the corresponding portion of the mask M is selectively pulled toward the electrostatic chuck 24 (see FIG. 4C). That is, the corresponding portion of the mask M is attracted by the magnetic force generated by the magnetic force generating unit 33 and is deformed to be closer to the electrostatic chuck 24 than the other portions. Accordingly, when a potential difference for adsorption of the mask M is applied to the electrostatic chuck 24 , the corresponding portion of the mask M is first adsorbed to the electrostatic chuck 24 .

The “area when the magnetic force generating unit 33 is projected onto the suction surface of the electrostatic chuck 24” as used herein refers to the process of adsorbing the mask M over the substrate S among the magnetic force generating units 33 . When the mask M comes into contact with the substrate S, a portion that generates a magnetic force for attracting the mask M is projected onto the suction surface of the electrostatic chuck 24 . Accordingly, for example, the magnetic force generating unit 33 is configured as an electromagnet module having a plurality of regions partitioned in a plane parallel to the suction surface of the electrostatic chuck 24 , and when the mask M is in contact with the substrate S, In the case of generating magnetic force by supplying electric power only to the electromagnet module of a partial area, the area when the electromagnet module of the partial area is projected onto the suction surface of the electrostatic chuck 24 is smaller than the area of the suction surface let it be done

After that, when the magnetic force generating unit 33 moves in a direction parallel to the adsorption surface, other parts of the mask M are sequentially attracted according to the movement of the magnetic force generating unit 33 and deformed to approach the electrostatic chuck 24 . and the electrostatic chuck 24 is adsorbed over the substrate S by the potential difference applied to the electrostatic chuck 24 . Thereby, the mask M is sequentially adsorbed along the moving direction of the magnetic force generating unit 33 from the adsorption starting point, so that no wrinkles remain after the adsorption is completed.

The magnetic force generator 33 is preferably formed to be shorter than the length of the suction surface in the first direction parallel to the suction surface of the electrostatic chuck 24 (eg, the short side direction of the electrostatic chuck 24 and the X direction). do. For example, the length in the first direction of the magnetic force generating unit 33 is the same as the length of the suction surface in the first direction so that the position of the suction start point of the mask M and the direction of adsorption can be more precisely controlled. It is more preferable to set it as 1/2 or less. The length of the magnetic force generating unit 33 in the first direction as used herein refers to the length of the longest portion of the magnetic force generating unit 33 in the first direction.

When the electrostatic chuck 24 has a plurality of adsorption sections, the magnetic force generating unit 33 is preferably installed to be less than or equal to the length in the first direction of the adsorption unit corresponding to the position of the magnetic force generating unit 33 among them. do.

The magnetic force generating unit 33 is substantially equal to or equal to the length of the suction surface in a second direction (eg, the long side direction of the electrostatic chuck 24 and the Y direction) that is parallel to the suction surface and intersects the first direction. It is preferable to be formed to be shorter. That is, when the length of the magnetic force generating unit 33 in the first direction is shorter than the length of the suction surface of the electrostatic chuck 24 in the first direction, as shown in FIG. 3C , the length in the second direction. may be substantially equal to or shorter than the length of the suction surface of the electrostatic chuck 24 in the second direction. When the length in the second direction of the magnetic force generating unit 33 is substantially the same as the length in the second direction of the adsorption surface, the starting point and the advancing direction of the mask adsorption cannot be controlled in the second direction, As described above, in the first direction, the starting point and the advancing direction of the mask adsorption can be controlled.

On the other hand, when the length of the magnetic force generating unit 33 in the second direction is smaller than the length of the suction surface in the second direction, the starting point and progress of mask adsorption not only in the first direction but also in the second direction. You can control the direction.

The magnetic force generating unit 33 of the present embodiment is not limited to a configuration shorter than the length of the adsorption surface in the first direction, and as shown in FIG. 3C , at least one of the first direction and the second direction or diagonally It may have various sizes and shapes as long as the starting point and progress of adsorption of the mask M can be controlled in a direction or the like.

For example, in the first direction, which is the short side of the adsorption surface, it is substantially the same as the length of the adsorption face, but in the second direction which is the long side of the adsorption face, it may be made shorter than the length of the adsorption face.

3c (i) to (v), when the magnetic force generating unit 33 is projected on the suction surface of the electrostatic chuck 24, its position (the position of the magnetic force application position or the suction starting point to be described later) is It may be arranged so as to correspond to the periphery of the electrostatic chuck 24 . For example, the magnetic force generating unit 33 is disposed so as to correspond to the periphery of the long side of the electrostatic chuck 24 . Accordingly, the starting point of the mask adsorption can be a part of the periphery of the electrostatic chuck 24 . However, the present invention is not limited to the configuration shown in FIGS. 3C(i) to (v), and the magnetic force generating unit 33 may be disposed at a position corresponding to the periphery of the short side of the electrostatic chuck 24, for example, , may be disposed at a position other than the periphery, such as a position corresponding to the central portion of the electrostatic chuck 24 (eg, (vi) to (viii) in FIG. 3C ).

In the present embodiment, the magnetic force generating unit 33 is installed to be movable in a direction including a direction parallel to the suction surface of the electrostatic chuck 24 . For example, the magnetic force generating unit 33 is movably installed in a direction parallel to the short side of the suction surface of the electrostatic chuck 24 (a first direction).

By installing the magnetic force generating unit 33 movably in a direction parallel to the adsorption surface in this way, the adsorption direction of the mask M can be more precisely controlled. That is, as the magnetic force generating unit 33 moves in a direction parallel to the suction surface of the electrostatic chuck 24 , the portion sucked by the magnetic force generating unit 33 within the mask M moves, and through this, The adsorption direction of the mask M can be precisely controlled.

The moving direction of the magnetic force generating unit 33 is not limited to the first direction, which is the short side direction of the electrostatic chuck 24 , and may be any direction. For example, the electrostatic chuck 24 may move in the second direction, which is the long side direction, or may move in a diagonal direction. Further, the movement of the magnetic force generating unit 33 is not limited to a linear movement, and may be a curved movement, or may be a movement that changes a direction in the middle of the movement.

By variously combining the shape of the magnetic force generating unit 33, the arrangement position in the plane parallel to the suction surface (the position 0 of the magnetic force application position or the suction origin to be described later, and the movement direction in the plane parallel to the suction surface), , it is possible to more precisely control the mask adsorption process.

For example, when the magnetic force generating unit 33 is formed to be shorter than the length of the adsorption surface of the electrostatic chuck 24 in the first direction and disposed on the long side periphery, the moving direction of the magnetic force generating unit 33 is the first direction. By making it parallel to , it is possible to control the mask M to be sequentially sucked from one long side periphery toward the other long side periphery.

When the magnetic force generating unit 33 is formed to be shorter than the length of the suction surface of the electrostatic chuck 24 in both the first direction and the second direction, the arrangement position of the magnetic force generating unit 33 (a magnetic force application position described later or By combining the position of the adsorption origin) and the moving direction of the magnetic force generating unit 33, it is possible to control the adsorption to proceed in either the first direction or the second direction, or in a diagonal direction.

In order to drive the magnetic force generating unit 33 in a direction parallel to the suction surface of the electrostatic chuck 24 , the electrostatic chuck system 30 of the present embodiment includes a magnetic force generating unit driving mechanism 35 . For example, as shown in FIG. 3D , the magnetic force generating unit driving mechanism 35 may be implemented with a motor and a ball screw, but the present invention is not limited thereto, and the magnetic force generating unit 33 is moved in a direction parallel to the adsorption surface. Other means may be used as far as possible. For example, the magnetic force generating unit 33 may be driven using a motor and a rack/pinion.

The magnetic force generating unit 33 may be provided so as to be movable between a magnetic force application position, which is a position capable of applying magnetic force to the mask M, and a retracted position, which is further away from the mask M than the magnetic force application position. While the magnetic force generating unit 33 is in the magnetic force application position, the portion corresponding to the position of the magnetic force generating unit 33 of the mask M is the magnetic force generating unit 33 side by the magnetic force from the magnetic force generating unit 33, That is, it is drawn toward the electrostatic chuck 24 and is closer to the lower surface of the substrate S adsorbed to the lower surface of the electrostatic chuck 24 than other portions of the mask M (that is, in a direction perpendicular to the main surface of the mask M). ) is transformed. Thereby, the magnetic force generating unit 33 can control the starting point of mask adsorption. When the magnetic force generating unit 33 is in the retracted position, the magnetic force acting on the mask M is relatively weak, and only a small magnetic force that cannot attract the mask M acts, or the magnetic force does not substantially act. will not

The magnetic force application position and the retraction position may be set apart from each other in a direction parallel to the electrostatic chuck adsorption surface. For example, the retracted position of the magnetic force generating unit 33 is, as shown in FIG. 3D , the upper surface of the electrostatic chuck 24 in the first direction (long side direction, Y direction of the electrostatic chuck 24 ) from the magnetic force application position. It may be out of position. That is, the retracted position and the magnetic force application position can be made to exist on a plane substantially parallel to the adsorption surface. In this case, the magnetic force does not substantially act in the direction perpendicular to the main surface of the mask M, and the deformation of the mask M does not substantially occur.

When the retracted position and the magnetic force application position of the magnetic force generating unit 33 are on a plane parallel to the adsorption surface, the mechanism and the mask M for driving the magnetic force generating unit 33 between the magnetic force applying position and the retracted position The magnetic force generating unit driving mechanism 35 for controlling the adsorption direction can be implemented as a single driving mechanism.

However, the present invention is not limited thereto, and the magnetic force application position and the retracted position of the magnetic force generating unit 33 may be positioned apart from each other in the vertical direction.

<Adsorption method by electrostatic chuck system>

Hereinafter, a method of adsorbing the substrate S and the mask M to the electrostatic chuck 24 will be described with reference to FIGS. 4A to 4C .

FIG. 4A shows a process (first adsorption step) of adsorbing the substrate S to the electrostatic chuck 24 .

In the present embodiment, as shown in FIG. 4A , the entire surface of the substrate S is not simultaneously attracted to the lower surface of the electrostatic chuck 24 , but from one end to the other end along the first side (short side) of the electrostatic chuck 24 . adsorption proceeds sequentially toward However, the present invention is not limited thereto, and for example, the substrate may be adsorbed from any one diagonal edge of the electrostatic chuck 24 toward another opposite edge thereof.

In order to sequentially adsorb the substrate S along the first side of the electrostatic chuck 24 , the order of applying the first potential difference for adsorption of the substrate to the plurality of sub-electrode units 241 to 249 may be controlled. , a first potential difference is simultaneously applied to the plurality of sub-electrodes, but the structure or support force of the support part of the substrate support unit 22 supporting the substrate S may be different.

4A illustrates an embodiment in which the substrate S is sequentially adsorbed to the electrostatic chuck 24 by controlling the potential difference applied to the plurality of sub-electrode units 241 to 249 of the electrostatic chuck 24 . Here, the three sub-electrode units 241 , 244 , and 247 arranged along the long side direction (Y direction) of the electrostatic chuck 24 form the first adsorption unit 41 , and a central portion of the electrostatic chuck 24 is formed. The three sub-electrode units 242 , 245 , and 248 form the second adsorption unit 42 , and the remaining three sub-electrode units 243 , 246 , 249 form the third adsorption unit 43 .

The potential difference control unit 32 controls so that the first potential difference ΔV1 is sequentially applied from the first suction unit 41 to the third suction unit 43 along the first side (short side) of the electrostatic chuck 24 . do.

The first potential difference [Delta]V1 is set to a potential difference of sufficient magnitude to surely adsorb the substrate S to the electrostatic chuck 24 .

Accordingly, the substrate S is adsorbed to the electrostatic chuck 24 from the side corresponding to the first adsorption part 41 of the substrate S, through the central portion of the substrate S, and toward the third adsorption part 43 side. (ie, adsorption of the substrate S proceeds in the X direction), the substrate S may be adsorbed to the electrostatic chuck 24 in a flat manner without leaving wrinkles in the center of the substrate.

At a predetermined point in time after the adsorption process (first adsorption step) of the substrate S to the electrostatic chuck 24 is completed, the potential difference controller 32 controls the electrode part of the electrostatic chuck 24 as shown in FIG. 4B . The potential difference applied to is lowered from the first potential difference ΔV1 to a second potential difference ΔV2 having a smaller magnitude than the first potential difference ΔV1.

The second potential difference ΔV2 is an adsorption-holding potential difference for holding the substrate S in a state in which the electrostatic chuck 24 is adsorbed, and the first potential difference applied when the substrate S is adsorbed to the electrostatic chuck 24 ( It is a potential difference smaller than ΔV1). Even if the potential difference applied to the electrostatic chuck 24 is lowered to the second potential difference ΔV2 , the first potential difference ΔV1 after the substrate S is once adsorbed to the electrostatic chuck 24 by the first potential difference ΔV1 ), it is possible to maintain the adsorption state of the substrate even when a second potential difference ΔV2 lower than that of the substrate is applied.

In this way, after the potential difference applied to the electrode portion of the electrostatic chuck 24 is lowered to the second potential difference, the substrate S adsorbed to the electrostatic chuck 24 and the mask M supported by the mask support unit 23 are separated. Adjust (align) the relative position.

During the process from the start of adsorption of the substrate S by the electrostatic chuck 24 to substrate alignment, the magnetic force generating unit 33 may be held in the retracted position. Thereby, the magnetic force from the magnetic force generating part 33 does not act on the mask M substantially, and in the state which does not attract the mask M, the adsorption|suction of the board|substrate S and board|substrate alignment can be performed.

Next, as shown in FIG. 4C , the mask M is adsorbed to the electrostatic chuck 24 with the substrate S interposed therebetween. That is, the mask M is adsorbed to the lower surface of the substrate S adsorbed to the electrostatic chuck 24 by an electrostatic force.

To this end, first, the electrostatic chuck 24 on which the substrate S is adsorbed is lowered toward the mask M by the electrostatic chuck Z actuator 28 . The electrostatic chuck 24 descends to a limit position where the electrostatic attraction force due to the suction and hold potential difference (second potential difference, ΔV2 ) applied to the electrostatic chuck 24 does not act on the mask M .

With the electrostatic chuck 24 lowered to the limit position, the magnetic force generating unit 33 moves from the retracted position to the magnetic force application position. When the magnetic force generating unit 33 moves to the magnetic force application position, the magnetic force applied from the magnetic force generating unit 33 in a direction perpendicular to the main surface of the mask M is sufficiently large, and the magnetic force generating unit 33 of the mask M is The part corresponding to the position of is pulled upward by magnetic force and is sucked. Thereby, the starting point of the adsorption|suction of the mask M to the electrostatic chuck 24 which is performed later is formed.

In a state in which the portion of the mask M corresponding to the position of the magnetic force generating unit 33 is attracted by the magnetic force, the potential difference controller 32 applies the third potential difference ΔV3 to the electrode portion of the electrostatic chuck 24 . Control.

The third potential difference ΔV3 is larger than the second potential difference ΔV2, and it is preferable that the mask M is charged beyond the substrate S by electrostatic induction. As a result, the mask M is attracted to the electrostatic chuck 24 over the substrate S. In particular, since the mask M is closest to the electrostatic chuck 24 at the suction starting point of the mask M formed by the magnetic force generator 33 , this portion is first attracted to the electrostatic chuck 24 .

However, the present invention is not limited thereto, and the third potential difference ΔV3 may have the same magnitude as the second potential difference ΔV2. Even if the third potential difference ΔV3 has the same magnitude as the second potential difference ΔV2, as described above, the mask M is lowered to the limit position of the electrostatic chuck 24 and the magnetic force generating unit 33 is used. Since the relative distance between the electrostatic chuck 24 or the substrate S and the mask M is narrowed by the suction, electrostatic induction may be induced in the mask M by the polarized charge electrostatically induced on the substrate, and the mask M ) through the substrate to the electrostatic chuck 24 , it is possible to obtain an adsorption force to the extent that it can be adsorbed.

The third potential difference ΔV3 may be made smaller than the first potential difference ΔV1 or may be set to have a magnitude equal to that of the first potential difference ΔV1 in consideration of the shortening of the process time Tact.

The mask M is sucked by the magnetic force generating unit 33, a predetermined potential difference is applied to the electrode portion of the electrostatic chuck 24 by the potential difference control unit 32, and then the electrostatic chuck ( 24) may be further lowered toward the mask M by the electrostatic chuck Z actuator 28. Thereby, the relative distance between the board|substrate S and the mask M can be shortened, and adsorption|suction of the mask M can be accelerated|stimulated. In this case, the magnetic force generating unit 33 may be further lowered together with the electrostatic chuck 24 .

In the mask adsorption process shown in Fig. 4C, after the mask adsorption starting point is made by the magnetic force generating unit 33, the magnetic force generating unit 33 is moved from the magnetic force application position in a direction parallel to the adsorption surface of the electrostatic chuck 24, for example. , to move in the first direction.

As the magnetic force generating unit 33 moves in a direction parallel to the suction surface of the electrostatic chuck 24 , a portion of the mask M corresponding to the position of the magnetic force generating unit 33 sequentially strikes the electrostatic chuck 24 . sucked towards At this time, in accordance with the movement of the magnetic force generating unit 33 , the potential difference control unit 32 controls the third potential difference ΔV3 along the first side (ie, along the first direction) from the first adsorption unit 41 to the third It is sequentially applied toward the adsorption unit 43 .

That is, as shown in Fig. 4c, the third potential difference is first applied to the first adsorption unit 41 corresponding to the starting point of adsorption (magnetic force application position) by the magnetic force generating unit 33, and then the magnetic force generating unit ( 33) moves along the first direction from the magnetic force application position to a position corresponding to the second adsorption unit 42, a third potential difference is applied to the second adsorption unit 42, and the magnetic force generating unit 33 When is moved to a position corresponding to the third adsorption unit 43 , a third potential difference is controlled to be applied to the third adsorption unit 43 .

As a result, the mask M is adsorbed to the electrostatic chuck 24 by a central portion of the mask M from the side corresponding to the first adsorption portion 41 of the mask M serving as the starting point of the mask M adsorption. and proceeds toward the third adsorption unit 43 side (that is, adsorption of the mask M proceeds in the X direction), and the mask M is flat without wrinkles occurring in the center of the mask M It may be adsorbed to the electrostatic chuck 24 (second adsorption step).

However, the present invention is not limited to the embodiment shown in FIG. 4C , and for example, the third potential difference ΔV3 may be simultaneously applied to the entire electrostatic chuck 24 . That is, since the mask suction starting point has already been formed by the magnetic force generating unit 33 , even if a third potential difference is simultaneously applied to the entire electrostatic chuck 24 , the mask suction starting point closest to the electrostatic chuck 24 is first suctioned. This is made, and then, as the magnetic force generating unit 33 moves in a direction parallel to the adsorption surface, the mask portion at a corresponding position is sequentially sucked by the magnetic force generating unit, so that the adsorption of the mask moves to the first side. proceeds sequentially.

In this way, after the entire mask M is adsorbed by the electrostatic attraction force of the electrostatic chuck 24 with the substrate S interposed therebetween, the magnetic force generating unit 33 is moved to the retracted position to attach the magnetic force generating unit 33 to the retracted position. The magnetic force acting in the direction perpendicular to the main surface of the mask M is reduced. Even if the magnetic force acting on the mask M is reduced by moving the magnetic force generating unit 33 to the retracted position, the mask M can be stably maintained in an adsorption state by the electrostatic force generated by the electrostatic chuck 24 .

According to the above-described embodiment of the present invention, in the mask adsorption process of adsorbing the mask M to the electrostatic chuck 24 over the substrate S, the magnetic force generating unit ( 33) by sucking a part of the mask M to form a starting point of mask adsorption, and then moving the magnetic force generating unit 33 to the electrostatic chuck 24 in a direction parallel to the adsorption surface of the electrostatic chuck 24 By applying a potential difference for mask adsorption to , the masks are sequentially adsorbed from the formed adsorption origin. Accordingly, the mask M can be adsorbed to the electrostatic chuck 24 beyond the substrate S so that wrinkles do not remain.

<Film forming process>

Hereinafter, a film-forming method employing the adsorption method according to the present embodiment will be described.

In a state where the mask M is placed on the mask holding unit 23 in the vacuum container 21 , the substrate is moved into the vacuum container 21 of the film forming apparatus 11 by the transfer robot 14 of the transfer chamber 13 . is brought in

The hand of the transport robot 14 that has entered the vacuum container 21 places the substrate S on the support of the substrate support unit 22 .

Then, after the electrostatic chuck 24 descends toward the substrate S and sufficiently approaches or comes into contact with the substrate S, a first potential difference ΔV1 is applied to the electrostatic chuck 24 to adsorb the substrate S. .

After the substrate is adsorbed to the electrostatic chuck 24 , the potential difference applied to the electrostatic chuck 24 is reduced from the first potential difference ΔV1 to the second potential difference ΔV2 . Even if the potential difference applied to the electrostatic chuck 24 is lowered to the second potential difference ΔV2 , the state of adsorption to the substrate by the electrostatic chuck 24 may be maintained in a subsequent process.

In a state in which the substrate S is adsorbed to the electrostatic chuck 24 , the substrate S is lowered toward the mask M in order to measure the relative displacement of the substrate S with respect to the mask M . In another embodiment of the present invention, in order to surely prevent the substrate from falling off from the electrostatic chuck 24 during the lowering process of the substrate adsorbed to the electrostatic chuck 24, after the lowering process of the substrate is completed (that is, to be described later) Immediately before the alignment process is started), the potential difference applied to the electrostatic chuck 24 may be lowered to the second potential difference ΔV2 .

When the board|substrate S descends to a measurement position, the alignment mark formed in the board|substrate S and the mask M is image|photographed with the camera 20 for alignment, and the relative position shift of a board|substrate and a mask is measured. In another embodiment of the present invention, in order to further increase the precision of the measurement process of the relative positions of the substrate and the mask, the potential difference applied to the electrostatic chuck 24 after the measurement process for alignment is completed (during the alignment process) is applied to the second It may be lowered by a potential difference.

As a result of the measurement, when it is determined that the displacement of the substrate relative to the mask exceeds the threshold, the substrate S in the state of being adsorbed to the electrostatic chuck 24 is moved in the horizontal direction (XYθ direction) to position the substrate with respect to the mask. Adjust (align). In another embodiment of the present invention, after the positioning process is completed, the potential difference applied to the electrostatic chuck 24 may be lowered to the second potential difference ΔV2 . Through this, precision can be further increased throughout the alignment process (relative position measurement and position adjustment).

After the alignment process, the electrostatic chuck 24 is lowered toward the mask M to move it to the limit position. At the limit position, the second potential difference applied to the electrostatic chuck 24 does not charge the mask M, so that the electrostatic force does not substantially act on the mask M.

In this state, the magnetic force generating unit 33 is moved to the magnetic force application position. When the magnetic force generating unit 33 comes to the magnetic force application position, the portion corresponding to the position of the magnetic force generating unit 33 of the mask M by the magnetic force applied to the mask M from the magnetic force generating unit 33 upward. are attracted Thereby, the starting point of mask adsorption|suction is formed.

In this state, while the magnetic force generating unit 33 is moved in a direction parallel to the suction surface of the electrostatic chuck 24 , the third potential difference ΔV3 is sequentially applied to the entire electrostatic chuck or from the suction unit corresponding to the suction start point of the mask. By applying it, the corresponding part of the mask M is adsorb|sucked over the board|substrate S. The mask M is adsorbed sequentially from the above-described adsorption starting point, and the mask M is adsorbed to the electrostatic chuck 24 without leaving wrinkles. As described above, after the starting point of mask adsorption is formed, the electrostatic chuck 24 on which the substrate S is adsorbed may be further lowered toward the mask M by the electrostatic chuck Z actuator 28 .

After the entire mask M is absorbed by the application of the third potential difference, the magnetic force generating unit 33 is moved from the magnetic force application position to the retracted position.

Thereafter, the potential difference applied to the electrode part or the sub-electrode part of the electrostatic chuck 24 is lowered to a fourth potential difference ΔV4 , which is a potential difference capable of maintaining a state in which the substrate and the mask are adsorbed to the electrostatic chuck 24 . Through this, it is possible to shorten the time required to separate the substrate S and the mask M from the electrostatic chuck 24 after the film formation process is completed.

Then, the shutter of the deposition source 25 is opened and the deposition material is deposited on the substrate S through a mask.

After deposition to a desired thickness, the mask M is separated by lowering the potential difference applied to the electrode part or the sub-electrode part of the electrostatic chuck 24 to a fifth potential difference ΔV5, and only the substrate is adsorbed to the electrostatic chuck 24 . In this state, the substrate is raised by the electrostatic chuck Z actuator 28 .

Then, the hand of the transport robot 14 enters the vacuum container 21 of the film forming apparatus 11 , and a potential difference of zero (0) or reverse polarity is applied to the electrode part or the sub-electrode part of the electrostatic chuck 24 to thereby electrostatically The chuck 24 is lifted off the substrate. Thereafter, the deposition-completed substrate is unloaded from the vacuum container 21 by the transport robot 14 .

In the above description, the film forming apparatus 11 has a configuration of a so-called bottom-up deposition method (Depo-up) in which the film is formed in a state in which the film forming surface of the substrate S faces downward in the vertical direction, but it is not limited thereto, and the substrate (S) may be arranged in a state in which it stands upright on the side surface of the vacuum container 21, and the film formation may be formed in a state in which the film formation surface of the substrate S is parallel to the direction of gravity.

<Method of manufacturing electronic device>

Next, an example of the manufacturing method of the electronic device using the film-forming apparatus of this embodiment is demonstrated. Hereinafter, the structure and manufacturing method of an organic electroluminescent display are illustrated as an example of an electronic device.

First, an organic EL display device to be manufactured will be described. Fig. 5(a) is an overall view of the organic EL display device 60, and Fig. 5(b) shows a cross-sectional structure of one pixel.

As shown in FIG. 5A , in the display area 61 of the organic EL display device 60, a plurality of pixels 62 including a plurality of light emitting elements are arranged in a matrix form. Although the details will be described later, each of the light emitting devices has a structure including an organic layer sandwiched between a pair of electrodes. In addition, the pixel here refers to the minimum unit which enables the display of a desired color in the display area 61. As shown in FIG. In the case of the organic EL display device according to the present embodiment, the pixel 62 is constituted by a combination of the first light emitting element 62R, the second light emitting element 62G, and the third light emitting element 62B that emit light different from each other. has been The pixel 62 is often composed of a combination of a red light emitting device, a green light emitting device, and a blue light emitting device, but may be a combination of a yellow light emitting device, a cyan light emitting device, and a white light emitting device. not.

Fig. 5(b) is a schematic partial cross-sectional view taken along line AB of Fig. 5(a). The pixel 62 has an organic EL element having an anode 64 , a hole transport layer 65 , light emitting layers 66R, 66G, and 66B, an electron transport layer 67 , and a cathode 68 on a substrate 63 . . Among them, the hole transport layer 65, the light emitting layers 66R, 66G, and 66B, and the electron transport layer 67 correspond to the organic layer. In this embodiment, the light emitting layer 66R is an organic EL layer emitting red light, the light emitting layer 66G is an organic EL layer emitting green color, and the light emitting layer 66B is an organic EL layer emitting blue color. The light-emitting layers 66R, 66G, and 66B are formed in patterns corresponding to light-emitting elements (sometimes referred to as organic EL elements) emitting red, green, and blue, respectively. In addition, the anode 64 is formed separately for each light emitting element. The hole transport layer 65, the electron transport layer 67, and the cathode 68 may be formed in common with the plurality of light emitting elements 62R, 62G, and 62B, or may be formed for each light emitting element. In addition, in order to prevent the anode 64 and the cathode 68 from being short-circuited by foreign substances, an insulating layer 69 is provided between the anodes 64 . In addition, since the organic EL layer is deteriorated by moisture and oxygen, a protective layer 70 for protecting the organic EL element from moisture and oxygen is provided.

Although the hole transport layer 65 or the electron transport layer 67 is shown as one layer in FIG. 5(b), depending on the structure of the organic EL display device, it may be formed of a plurality of layers including the hole blocking layer or the electron blocking layer. may be In addition, a hole injection layer having an energy band structure capable of smoothly injecting holes from the anode 64 to the hole transport layer 65 may be formed between the anode 64 and the hole transport layer 65 . . Similarly, an electron injection layer may be formed between the cathode 68 and the electron transport layer 67 .

Next, an example of a manufacturing method of the organic EL display device will be specifically described.

First, a substrate 63 on which a circuit (not shown) for driving an organic EL display device and an anode 64 are formed is prepared.

An acrylic resin is formed by spin coating on the substrate 63 on which the anode 64 is formed, and the acrylic resin is patterned to form an opening in the portion where the anode 64 is formed by lithography to form the insulating layer 69 . This opening corresponds to the light emitting region in which the light emitting element actually emits light.

The substrate 63 patterned with the insulating layer 69 is loaded into the first organic material film forming apparatus, the substrate is held by an electrostatic chuck, and a hole transport layer 65 is formed as a common layer over the anode 64 of the display area. . The hole transport layer 65 is formed by vacuum deposition. In reality, since the hole transport layer 65 is formed to have a size larger than that of the display area 61, a high-precision mask is not required.

Next, the substrate 63 formed up to the hole transport layer 65 is loaded into the second organic material film forming apparatus, and is held by an electrostatic chuck. The substrate and the mask are aligned, the substrate is placed on the mask, and the red light emitting layer 66R is formed on the portion of the substrate 63 where the red light emitting element is placed.

Similar to the film formation of the light emitting layer 66R, the light emitting layer 66G emitting green light is formed by the third organic material film forming apparatus, and further, the light emitting layer 66B which emits blue light is formed by the fourth organic material film forming apparatus. After the formation of the light-emitting layers 66R, 66G, and 66B is completed, the electron transporting layer 67 is formed over the entire display area 61 by the fifth organic material film-forming apparatus. The electron transport layer 67 is formed as a layer common to the light emitting layers 66R, 66G, and 66B of the three colors.

A cathode 68 is formed by moving the substrate formed up to the electron transport layer 67 to a metallic deposition material film forming apparatus.

According to the present invention, the substrate and/or mask is adsorbed and held by the electrostatic chuck 24 , but when the mask is adsorbed, an adsorption origin is formed by the magnetic force generating unit 33 and the magnetic force generating unit 33 is adsorbed. By moving in a direction parallel to the surface, the mask can be adsorbed to the electrostatic chuck 24 without wrinkles.

After that, it is transferred to a plasma CVD apparatus to form a protective layer 70 , thereby completing the organic EL display apparatus 60 .

From the time the substrate 63 on which the insulating layer 69 is patterned is loaded into the film forming apparatus until the film formation of the protective layer 70 is completed, when exposed to an atmosphere containing moisture or oxygen, a light emitting layer made of an organic EL material is It may be deteriorated by moisture or oxygen. Therefore, in this example, carrying in and carrying out of the board|substrate between film-forming apparatuses are performed in a vacuum atmosphere or inert gas atmosphere.

The above embodiment shows an example of the present invention, and the present invention is not limited to the configuration of the above embodiment, and may be appropriately modified within the scope of the technical idea.

24: electrostatic chuck
30: electrostatic chuck system
31: potential difference applying unit
32: potential difference control unit
33: magnetic force generating unit
35: magnetic force generating unit driving mechanism

Claims (22)

An electrostatic chuck system for adsorbing an adsorbent, comprising:
an electrostatic chuck including an adsorption surface for adsorbing the adsorbent and an electrode part;
a potential difference applying unit for applying a potential difference for adsorbing the adsorbed body to the electrostatic chuck to the electrode unit;
a magnetic force generating unit disposed on the opposite side of the adsorption surface of the electrostatic chuck;
and a driving mechanism for moving the magnetic force generating unit in a direction including a first direction parallel to the suction surface of the electrostatic chuck;
The electrostatic chuck system, wherein the potential difference applying unit applies the potential difference to the electrode unit after at least a portion of the adsorbed body is attracted by the magnetic force of the magnetic force generating unit.
The electrostatic chuck system according to claim 1, wherein an area projected by the magnetic force generator onto the suction surface is smaller than an area of the suction surface.
3. The method according to claim 2, wherein the magnetic force generating unit has a length in the first direction parallel to the suction surface when projected onto the suction surface is smaller than a length in the first direction of the suction surface, ,
The electrostatic chuck system of claim 1, wherein the potential difference applying unit applies the potential difference to the electrode unit while the driving mechanism moves the magnetic force generating unit in the first direction.
4. The method according to claim 3, wherein the magnetic force generating unit has a length in the first direction when projected onto the adsorption surface is 1/2 or less of a length of the suction surface in the first direction. electrostatic chuck system.
The electrostatic chuck system of claim 1 , wherein the first direction is parallel to a short side direction of the suction surface of the electrostatic chuck.
The electrostatic chuck system according to claim 5, wherein the driving mechanism moves the magnetic force generating unit from one long side periphery of the suction surface toward the other long side periphery along the first direction.
The electrostatic chuck system of claim 1 , wherein the first direction is parallel to a long side direction of the suction surface of the electrostatic chuck.
8. The electrostatic chuck system according to claim 7, wherein the driving mechanism moves the magnetic force generating unit from one short side periphery of the suction surface toward the other short side periphery along the first direction.
The electrostatic chuck system of claim 1 , wherein the potential difference applying unit applies a first potential difference for adsorbing a first adsorbed body and a second potential difference for adsorbing a second adsorbed body beyond the first adsorbed body. .
10. The method according to claim 9, wherein the magnetic force generating unit is located between a magnetic force application position for applying a magnetic force to the second adsorbed body and a retracted position for applying a magnetic force weaker than the magnetic force applied at the magnetic force application position to the second adsorbent body. An electrostatic chuck system, characterized in that it is installed to be movable.
A film forming apparatus for forming a film on a substrate through a mask, comprising:
An electrostatic chuck system for adsorbing a substrate as a first adsorbent and a mask as a second adsorbent,
The electrostatic chuck system is a film forming apparatus, characterized in that the electrostatic chuck system according to any one of claims 1 to 10.
A method for adsorbing an adsorbent, comprising:
a first adsorption step of applying a first potential difference to an electrode portion of the electrostatic chuck to adsorb a first adsorbent to an adsorption surface on which the adsorbed body is adsorbed;
A suction step of attracting at least a portion of the second adsorbed body by the magnetic force from the magnetic force generating unit with the first adsorbed body interposed therebetween by the magnetic force of the magnetic force generating unit disposed on the opposite side of the adsorption surface of the electrostatic chuck; ,
After at least a part of the second adsorbed body is attracted by the magnetic force of the magnetic force generating unit, a second potential difference equal to or different from the first potential difference, which attracts the second adsorbed body to the electrostatic chuck, is applied to the electrode unit a second adsorption step of moving the magnetic force generating unit in a direction including a direction parallel to the adsorption surface of the electrostatic chuck to adsorb the second adsorbed body to the electrostatic chuck with the first adsorbed body interposed therebetween;
Adsorption method comprising the.
13. The method of claim 12, wherein in the second adsorption step, from a portion of the second adsorbed body sucked in the suction step, the first adsorbed body is brought into contact with the electrostatic chuck with the first adsorbed body interposed therebetween. An adsorption method characterized in that the second adsorbent is adsorbed.
The adsorption method according to claim 12, further comprising, after the second adsorption step, a magnetic force lowering step of lowering the magnetic force applied to the second adsorbed body than the magnetic force of the sucking step.
15. The method of claim 14,
The suction step includes moving the magnetic force generating unit to a magnetic force application position capable of attracting at least a part of the second adsorbed body by magnetic force,
The magnetic force lowering step comprises moving the magnetic force generating unit to a retracted position in which the magnetic force applied to the second adsorbed body is lowered than the magnetic force applied position.
13. The method of claim 12,
In the suction step, the adsorption method, characterized in that the second adsorbed body is partially sucked.
A film forming method for forming a deposition material on a substrate through a mask, comprising:
bringing the mask into the vacuum container;
loading the substrate into the vacuum container;
a first adsorption step of applying a first potential difference to an electrode part of the electrostatic chuck to adsorb the substrate to an adsorption surface adsorbing the substrate of the electrostatic chuck;
a suction step of attracting at least a portion of the mask by magnetic force from a magnetic force generating unit disposed on the opposite side of the suction surface of the electrostatic chuck, with the substrate interposed therebetween;
After at least a portion of the mask is sucked by the magnetic force of the magnetic force generating unit, a second potential difference equal to or different from the first potential difference for adsorbing the mask to the electrostatic chuck is applied to the electrode unit, and the magnetic force is generated. a second adsorption step of adsorbing the mask with the substrate interposed therebetween by moving the unit in a direction including a direction parallel to the adsorption surface of the electrostatic chuck;
and evaporating the deposition material while the substrate and the mask are adsorbed to the electrostatic chuck to form a deposition material on the substrate through the mask.
18. The method of claim 17, wherein in the second adsorption step, the mask is adsorbed from the portion sucked in the sucking step of the mask to the substrate, with the substrate interposed therebetween by the electrostatic chuck. film-forming method.
The film forming method according to claim 17, further comprising a magnetic force lowering step of lowering the magnetic force applied to the mask than the magnetic force of the sucking step after the second adsorption step.
20. The method of claim 19
The suction step includes moving the magnetic force generating unit to a magnetic force application position capable of attracting at least a portion of the mask by magnetic force,
The magnetic force lowering step includes moving the magnetic force generating unit to a retracted position in which the magnetic force applied to the mask is lower than the magnetic force applying position.
18. The method of claim 17
In the suction step, the film forming method, characterized in that the mask is partially sucked.
22. A method of manufacturing an electronic device, characterized in that the electronic device is manufactured using the film forming method according to any one of claims 17 to 21.

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