JP2020053684A - Electrostatic chuck system, deposition device, adsorbed body separation method, deposition method and manufacturing method for electronic device - Google Patents

Abstract

To satisfactorily separate a first adsorbed body and a second adsorbed body adsorbed onto an electrostatic chuck from the electrostatic chuck.SOLUTION: The electrostatic chuck system includes an electrostatic chuck including electrode parts; a voltage application section for applying a voltage to the electrode part of the electrostatic chuck; and a voltage control section for controlling voltage application by the voltage application section. The voltage control section controls the voltage application section to apply a first separation voltage for separating the second adsorbed body from the first adsorbed body independently of each of the plurality of electrode parts of the electrostatic chuck in which a first adsorbed body and a second adsorbed body through the first adsorbed body are adsorbed.SELECTED DRAWING: Figure 7

Description

  The present invention relates to an electrostatic chuck system, a film forming apparatus, a method for separating an object to be adsorbed, a film forming method, and a method for manufacturing an electronic device.

  In manufacturing an organic EL display device (organic EL display), when forming an organic light emitting element (organic EL element; OLED) constituting the organic EL display device, a vapor deposition material evaporated from an evaporation source of a film forming apparatus is used. An organic layer or a metal layer is formed by vapor deposition on a substrate through a mask on which a pixel pattern is formed.

  In a film deposition apparatus of an upward evaporation type (deposition up), an evaporation source is provided in a lower part of a vacuum container of the film deposition apparatus. On the other hand, the substrate is placed on the upper part of the vacuum container, and a deposition material is deposited on the lower surface of the substrate. In the vacuum vessel of such an upward deposition type film forming apparatus, the substrate is held only by the peripheral portion of the lower surface of the substrate by the substrate holder, so that the substrate is bent by its own weight, and this is one factor that reduces the deposition accuracy. Has become. Even in a film forming apparatus other than the upward evaporation method, the substrate may be bent by its own weight.

  As a method for reducing the deflection of the substrate due to its own weight, a technique using an electrostatic chuck has been studied. That is, the entire upper surface of the substrate is attracted by the electrostatic chuck, so that the deflection of the substrate can be reduced.

  Patent Literature 1 discloses a technique in which a substrate and a mask are sucked by an electrostatic chuck.

Korean Patent Publication No. 2007-0010723

  However, Patent Document 1 does not disclose voltage control when separating a substrate and a mask from an electrostatic chuck.

  SUMMARY OF THE INVENTION It is an object of the present invention to satisfactorily separate a first object to be attracted and a second object to be attracted onto an electrostatic chuck from the electrostatic chuck.

  An electrostatic chuck system according to a first aspect of the present invention includes an electrostatic chuck including a plurality of electrode units, a voltage applying unit for applying a voltage to the electrode unit of the electrostatic chuck, and a voltage applied by the voltage applying unit. And a voltage control unit for controlling the application of the voltage, wherein the voltage control unit is configured to adsorb the first adsorbent and the electrostatic adsorbed second adsorbent via the first adsorbent. Controlling the voltage application unit to apply a first separation voltage for separating the second object to be adsorbed from the first object to be adsorbed independently for each of the plurality of electrode units of the chuck. It is characterized by.

A film forming apparatus according to a second aspect of the present invention is a film forming apparatus for forming a film on a substrate through a mask, and adsorbs a substrate as a first object to be adsorbed and a mask as a second object to be adsorbed. And an electrostatic chuck system according to the first aspect of the present invention.

  A method for separating an object to be adsorbed according to a third aspect of the present invention is a method for separating an object to be adsorbed from the electrode portion of an electrostatic chuck including a plurality of electrode portions, the method comprising: A first separation voltage for separating the second object from the first object is applied to the electrode portion of the electrostatic chuck to which the second object is adsorbed via the one object. The method further comprises applying the first separation voltage to the plurality of electrode units independently in the step of applying the first separation voltage.

  A film forming method according to a fourth aspect of the present invention is a method of forming a deposition material on a substrate via a mask, comprising: loading the mask into a vacuum vessel; and loading the substrate into the vacuum vessel. And applying a first chucking voltage to the electrode portion of the electrostatic chuck to attract the substrate to the electrostatic chuck, and applying a second chucking voltage to the electrode portion to apply a voltage to the electrostatic chuck. A step of adsorbing the mask via the substrate, evaporating a vapor deposition material while the substrate and the mask are adsorbed to the electrostatic chuck, and depositing the vapor deposition material on the substrate via the mask. Step, the mask as the second object to be suctioned and the substrate as the first object to be suctioned are sequentially transferred from the electrostatic chuck using the method for separating the object to be sucked according to the third aspect of the present invention. And a separating step.

  A method for manufacturing an electronic device according to a fifth aspect of the present invention is characterized in that an electronic device is manufactured using the film forming method according to the fourth aspect of the present invention.

  ADVANTAGE OF THE INVENTION According to this invention, the 1st to-be-adsorbed object and the 2nd to-be-adsorbed object adsorbed by the electrostatic chuck can be separated well.

FIG. 1 is a schematic diagram of a part of an electronic device manufacturing apparatus. FIG. 2 is a schematic diagram of a film forming apparatus according to one embodiment of the present invention. FIG. 3 is a conceptual diagram and a schematic diagram of an electrostatic chuck system according to an embodiment of the present invention. FIG. 4 is a process diagram showing a sequence of attracting a substrate to an electrostatic chuck. FIG. 5 is a process diagram showing a sequence of attracting a mask to an electrostatic chuck. FIG. 6 is a process chart showing a separation sequence of the mask and the substrate from the electrostatic chuck. FIG. 7 is a graph showing a change in voltage applied to the electrostatic chuck. FIG. 8 is a schematic diagram illustrating an electronic device.

  Hereinafter, preferred embodiments and examples of the present invention will be described with reference to the drawings. However, the following embodiments and examples are merely illustrative examples of preferred configurations of the present invention, and the scope of the present invention is not limited to those configurations. In the following description, the hardware configuration and software configuration of the apparatus, the processing flow, the manufacturing conditions, dimensions, materials, shapes, and the like limit the scope of the present invention to only these unless otherwise specified. It is not intended.

The present invention can be applied to an apparatus for forming a film by depositing various materials on the surface of a substrate, and can be preferably applied to an apparatus for forming a thin film (material layer) of a desired pattern by vacuum evaporation. As the material of the substrate, any material such as glass, a film of a polymer material, and a metal can be selected. The substrate may be, for example, a substrate in which a film such as a polyimide is laminated on a glass substrate. . In addition, an arbitrary material such as an organic material or a metallic material (metal, metal oxide, or the like) may be selected as a deposition material. The present invention can be applied to a film forming apparatus including a sputtering apparatus and a CVD (Chemical Vapor Deposition) apparatus other than the vacuum evaporation apparatus described below. The technology of the present invention is specifically applicable to manufacturing apparatuses for organic electronic devices (for example, organic light-emitting devices, thin-film solar cells), optical members, and the like. Among them, an apparatus for manufacturing an organic light-emitting element that forms an organic light-emitting element by evaporating an evaporation material and evaporating the evaporation material on a substrate via a mask is one of the preferable application examples of the present invention.

<Electronic device manufacturing equipment>
FIG. 1 is a plan view schematically showing a configuration of a part of an electronic device manufacturing apparatus.

  The manufacturing apparatus of FIG. 1 is used, for example, for manufacturing a display panel of an organic EL display device for a smartphone. In the case of a display panel for a smartphone, for example, a 4.5 generation substrate (about 700 mm × about 900 mm) or a 6 generation full size (about 1500 mm × about 1850 mm) or a half cut size (about 1500 mm × about 925 mm) substrate After forming a film for forming an organic EL element, the substrate is cut out to produce a plurality of small-sized panels.

  An electronic device manufacturing apparatus generally includes a plurality of cluster apparatuses 1 and a relay apparatus connecting the cluster apparatuses.

  The cluster apparatus 1 includes a plurality of film forming apparatuses 11 for performing processing (for example, film forming processing) on the substrate S, a plurality of mask stock apparatuses 12 for storing masks M before and after use, and a transfer chamber disposed at the center thereof. 13 is provided. The transfer chamber 13 is connected to each of the plurality of film forming apparatuses 11 and the mask stock apparatus 12, as shown in FIG.

  In the transfer chamber 13, a transfer robot 14 for transferring the substrate and the mask is arranged. The transfer robot 14 transfers the substrate S from the pass chamber 15 of the relay device arranged on the upstream side to the film forming apparatus 11. Further, the transfer robot 14 transfers the mask M between the film forming apparatus 11 and the mask stock apparatus 12. The transfer robot 14 is, for example, a robot having a structure in which a robot hand holding a substrate S or a mask M is attached to an articulated arm.

  In the film forming apparatus 11 (also referred to as an evaporation apparatus), an evaporation material stored in an evaporation source is heated by a heater to evaporate, and is evaporated on a substrate via a mask. A series of film forming processes such as transfer of the substrate S to and from the transfer robot 14, adjustment (alignment) of the relative position between the substrate S and the mask M, fixing of the substrate S on the mask M, and film formation (evaporation) This is performed by the device 11.

  In the mask stock apparatus 12, a new mask used in the film forming process in the film forming apparatus 11 and a used mask are stored in two cassettes. The transfer robot 14 transfers the used mask from the film forming apparatus 11 to the cassette of the mask stock apparatus 12, and transfers a new mask stored in another cassette of the mask stock apparatus 12 to the film forming apparatus 11.

  The cluster device 1 includes a pass chamber 15 for transferring the substrate S from the upstream side to the cluster device 1 in the flow direction of the substrate S, and a substrate S on which the film forming process has been completed in the cluster device 1 to another downstream side. A buffer chamber 16 for delivery to the cluster device is connected. The transfer robot 14 in the transfer chamber 13 receives the substrate S from the upstream path chamber 15 and transfers the substrate S to one of the film forming apparatuses 11 (for example, the film forming apparatus 11a) in the cluster apparatus 1. Further, the transfer robot 14 receives the substrate S on which the film forming process has been completed in the cluster apparatus 1 from one of the plurality of film forming apparatuses 11 (for example, the film forming apparatus 11b), and connects the buffer S connected to the downstream side. It is transported to the chamber 16.

  A swirling chamber 17 that changes the direction of the substrate S is provided between the buffer chamber 16 and the pass chamber 15. The swiveling chamber 17 is provided with a transfer robot 18 for receiving the substrate S from the buffer chamber 16, rotating the substrate S by 180 °, and transferring the substrate S to the pass chamber 15. Thereby, the orientation of the substrate S is the same in the upstream cluster device and the downstream cluster device, and the substrate processing is facilitated.

  The pass chamber 15, the buffer chamber 16, and the swirl chamber 17 are so-called relay devices that connect the cluster devices. The relay devices installed on at least one of the upstream side and the downstream side of the cluster device include the pass chamber 15, the buffer It includes at least one of the chamber 16 and the swirl chamber 17.

  The film forming apparatus 11, the mask stock apparatus 12, the transfer chamber 13, the buffer chamber 16, the swirl chamber 17, and the like are maintained in a high vacuum state in the process of manufacturing the organic light emitting device. The pass chamber 15 is normally maintained in a low vacuum state, but may be maintained in a high vacuum state as needed.

  In this embodiment, the configuration of the electronic device manufacturing apparatus has been described with reference to FIG. 1. However, the present invention is not limited to this, and may have other types of apparatuses and chambers. Or the arrangement between chambers may be changed.

Hereinafter, a specific configuration of the film forming apparatus 11 will be described.
<Deposition equipment>
FIG. 2 is a schematic diagram illustrating a configuration of the film forming apparatus 11. In the following description, an XYZ orthogonal coordinate system in which the vertical direction is the Z direction is used. When the substrate S is fixed so as to be parallel to the horizontal plane (XY plane) at the time of film formation, the short direction (the direction parallel to the short side) of the substrate S is the X direction, and the long direction (the direction parallel to the long side). Let it be the Y direction. The rotation angle about the Z axis is represented by θ.

  The film forming apparatus 11 includes a vacuum vessel 21 maintained in a vacuum atmosphere or an inert gas atmosphere such as a nitrogen gas, a substrate support unit 22 provided inside the vacuum vessel 21, a mask support unit 23, and an electrostatic chuck. 24 and an evaporation source 25.

  The substrate support unit 22 is a unit that receives and holds the substrate S transported by the transport robot 14 provided in the transport chamber 13 and is also called a substrate holder.

  A mask support unit 23 is provided below the substrate support unit 22. The mask support unit 23 is a unit that receives and holds the mask M transported by the transport robot 14 provided in the transport chamber 13 and is also called a mask holder.

  The mask M has an opening pattern corresponding to the thin film pattern formed on the substrate S, and is mounted on the mask support unit 23. In particular, a mask used for manufacturing an organic EL element for a smartphone is a metal mask on which a fine opening pattern is formed, and is also called an FMM (Fine Metal Mask).

Above the substrate support unit 22, an electrostatic chuck 24 for adsorbing and fixing the substrate by electrostatic attraction is provided. The electrostatic chuck 24 has a structure in which an electric circuit such as a metal electrode is embedded in a dielectric (for example, ceramic material) matrix. The electrostatic chuck 24 may be a Coulomb force type electrostatic chuck or a Johnson-Rahbek force type electrostatic chuck. Further, it may be a gradient force type electrostatic chuck. However, the electrostatic chuck 24 is preferably a gradient force type electrostatic chuck. This is because the electrostatic chuck 24 is a gradient force type electrostatic chuck, so that even if the substrate S is an insulating substrate, it can be satisfactorily adsorbed by the electrostatic chuck 24. When the electrostatic chuck 24 is a Coulomb force type electrostatic chuck, when a positive (+) and a negative (−) voltage is applied to the metal electrode, the electrostatic chuck 24 is applied to the substrate S or the like through the dielectric matrix. Polarized charges having a polarity opposite to that of the metal electrode are induced, and the substrate S is attracted and fixed to the electrostatic chuck 24 by electrostatic attraction between the substrate S and the electrostatic chuck 24.

  The electrostatic chuck 24 may be formed of one plate or may have a plurality of sub-plates. Further, even in the case of being formed by one plate, a plurality of electric circuits may be included therein, and the control may be performed such that the electrostatic attraction differs depending on the position in one plate.

  In the present embodiment, as described later, not only the substrate S (the first object to be sucked) but also the mask M (the second object to be sucked) are sucked and held by the electrostatic chuck 24 before the film forming process. Thereafter, a film forming process is performed in a state where the substrate S (first object to be sucked) and the mask M (second object to be sucked) are held by the electrostatic chuck 24, and after the film forming process is completed, the substrate S (the The holding of the electrostatic chuck 24 with respect to the first suction target and the mask M (second suction target) is released.

  That is, in the present embodiment, the substrate S (first object to be sucked) placed vertically below the electrostatic chuck 24 is sucked and held by the electrostatic chuck, and then the substrate S (the first object to be sucked) is held. ), The mask M (the second object to be attracted) placed on the opposite side of the electrostatic chuck 24 is attracted and held by the electrostatic chuck 24 via the substrate S (the first object to be attracted). Then, after performing the film forming process in a state where the substrate S (the first object to be sucked) and the mask M (the second object to be sucked) are held by the electrostatic chuck 24, the substrate S (the first object to be sucked) is The mask M (the second object) is peeled off from the electrostatic chuck 24. At this time, the mask M (the second object to be sucked) sucked via the substrate S (the first object to be sucked) is first peeled, and then the substrate S (the first object to be sucked) is peeled. This will be described later with reference to FIGS.

  Although not shown in FIG. 2, by providing a cooling mechanism (for example, a cooling plate) for suppressing a rise in the temperature of the substrate S on the side opposite to the suction surface of the electrostatic chuck 24, the organic material deposited on the substrate S is provided. It is good also as a structure which suppresses the quality change and deterioration of.

  The evaporation source 25 includes a crucible (not shown) in which a deposition material to be formed on the substrate S is stored, a heater (not shown) for heating the crucible, and a deposition material until the evaporation rate from the evaporation source becomes constant. It also includes a shutter (not shown) for preventing scattering on the substrate S. The evaporation source 25 may have various configurations according to the application, such as a point evaporation source and a linear evaporation source.

  Although not shown in FIG. 2, the film forming apparatus 11 includes a film thickness monitor (not shown) for measuring the thickness of the film deposited on the substrate S and a film thickness calculation unit (not shown).

  A substrate Z actuator 26, a mask Z actuator 27, an electrostatic chuck Z actuator 28, a position adjusting mechanism 29, and the like are provided on the upper outside (atmosphere side) of the vacuum vessel 21. These actuators and position adjustment mechanisms are composed of, for example, a motor and a ball screw, or a motor and a linear guide. The substrate Z actuator 26 is a driving unit for moving the substrate support unit 22 up and down (moving in the Z direction). The mask Z actuator 27 is a driving unit that moves the mask support unit 23 up and down (moves in the Z direction). The electrostatic chuck Z actuator 28 is a driving unit for moving the electrostatic chuck 24 up and down (moving in the Z direction).

The position adjusting mechanism 29 is driving means for alignment of the electrostatic chuck 24. The position adjustment mechanism 29 causes the entire electrostatic chuck 24 to move in the X direction, the Y direction, and rotate θ with respect to the substrate support unit 22 and the mask support unit 23. In the present embodiment, the alignment for adjusting the relative position between the substrate S and the mask M is performed by adjusting the position of the electrostatic chuck 24 in the X, Y, and θ directions while the substrate S is being sucked.

  On the outer upper surface of the vacuum vessel 21, in addition to the above-described driving mechanism, an alignment mark for photographing alignment marks formed on the substrate S and the mask M through a transparent window provided on the upper face of the vacuum vessel 21. A camera 20 may be provided. In this embodiment, the alignment camera 20 may be installed at a position corresponding to a diagonal line of the rectangular substrate S, the mask M, and the electrostatic chuck 24, or at a position corresponding to four corners of the rectangle.

  The alignment camera 20 installed in the film forming apparatus 11 of the present embodiment is a fine alignment camera used to adjust the relative position of the substrate S and the mask M with high precision, and has a viewing angle of It is a small but high resolution camera. The film forming apparatus 11 may include a rough alignment camera having a relatively wide viewing angle and low resolution in addition to the fine alignment camera 20.

  The position adjusting mechanism 29 is configured to control the position of the substrate S (first object) based on the position information of the substrate S (first object) and the mask M (second object) acquired by the alignment camera 20. And the mask M (the second object) is relatively moved to perform position adjustment.

  The film forming apparatus 11 includes a control unit (not shown). The control unit has functions such as transport and alignment of the substrate S, control of the evaporation source 25, and control of film formation. The control unit can be configured by, for example, a computer having a processor, a memory, a storage, an I / O, and the like. In this case, the function of the control unit is realized by the processor executing a program stored in the memory or the storage. As the computer, a general-purpose personal computer may be used, or an embedded computer or a PLC (programmable logic controller) may be used. Alternatively, some or all of the functions of the control unit may be configured by a circuit such as an ASIC or an FPGA. Further, a control unit may be provided for each film forming apparatus, and one control unit may be configured to control a plurality of film forming apparatuses.

<Electrostatic chuck system>
The electrostatic chuck system 30 according to the present embodiment will be described with reference to FIGS.

  FIG. 3A is a conceptual block diagram of the electrostatic chuck system 30 of the present embodiment, and FIG. 3B is a schematic cross-sectional view of the electrostatic chuck 24, and FIG. 3 is a schematic plan view of the electrostatic chuck 24. FIG.

  As shown in FIG. 3A, the electrostatic chuck system 30 according to the present embodiment includes an electrostatic chuck 24, a voltage application unit 31, and a voltage control unit 32.

  The voltage applying unit 31 applies a voltage for generating an electrostatic attraction to the electrode unit of the electrostatic chuck 24.

The voltage control unit 32 controls the magnitude of the voltage applied to the electrode unit by the voltage applying unit 31 according to the progress of the suction process of the electrostatic chuck system 30 or the film forming process of the film forming apparatus 11, The voltage maintaining time, the order of applying the voltage, and the like are controlled. The voltage control unit 32 can independently control the voltage application to the plurality of sub-electrodes 241 to 249 included in the electrodes of the electrostatic chuck 24 for each sub-electrode. In the present embodiment, the voltage control unit 32 is configured separately from the control unit of the film forming apparatus 11, but the present invention is not limited to this, and may be integrated with the control unit of the film forming apparatus 11.

  The electrostatic chuck 24 has an electrode unit that generates an electrostatic attraction force for adsorbing an object to be attracted (for example, the substrate S or the mask M) on the attraction surface, and the electrode unit includes a plurality of sub-electrode units 241 to 249. May be adopted. For example, as shown in FIG. 3C, the electrostatic chuck 24 of the present embodiment has a longitudinal direction (Y direction) of the electrostatic chuck 24 and / or a short direction (X direction) of the electrostatic chuck 24. A plurality of divided sub-electrode portions 241 to 249 are arranged along.

  Each of the sub-electrode portions 241 to 249 has an electrode pair 33 to which positive (first polarity) and negative (second polarity) voltages are applied in order to generate an electrostatic attraction force. Further, the electrode pair 33 included in the plurality of sub-electrode units 241 to 249 has a first electrode 331 to which a positive voltage is applied and a second electrode 332 to which a negative voltage is applied.

  Each of the first electrode 331 and the second electrode 332 has a comb shape as shown in FIG. For example, each of the first electrode 331 and the second electrode 332 has a plurality of comb teeth and a base connected to the plurality of comb teeth. The bases of the electrodes 331 and 332 supply electric power to the comb teeth, and the plurality of comb teeth generate an electrostatic attraction force with the object to be attracted. In each of the sub-electrodes 241 to 249, the comb-tooth portions of the first electrode 331 are alternately arranged so as to face the comb-tooth portions of the second electrode 332 and have a complicated configuration. As described above, by forming the comb-tooth portions of the electrodes 331 and 332 to face each other and intersect each other, the interval between the electrodes to which different voltages are applied can be reduced, and a large uneven electric field is formed. Then, the substrate S can be adsorbed by the gradient force.

  In the present embodiment, it has been described that the electrodes 331 and 332 of the sub-electrodes 241 to 249 of the electrostatic chuck 24 have a comb-tooth shape. However, the present invention is not limited to this, and the present invention is not limited thereto. It can have a variety of shapes as long as it can generate an attractive force.

  The electrostatic chuck 24 of the present embodiment has a plurality of suction portions corresponding to a plurality of sub-electrode portions. For example, as shown in FIG. 3C, the electrostatic chuck 24 of the present embodiment has nine suction portions corresponding to the nine sub-electrode portions 241 to 249, but is not limited thereto. To more precisely control the suction, another number of suction portions may be provided.

  The suction unit is provided so as to be divided in the longitudinal direction (Y direction) and the short direction (X direction) of the electrostatic chuck 24, but is not limited thereto. It may be divided only into The plurality of suction units may be configured so that one plate physically has a plurality of electrode units, and a plurality of physically divided plates each have one or more electrode units. It may be configured.

  For example, in the embodiment shown in FIG. 3 (c), each of the plurality of suction portions may be configured to correspond to each of the plurality of sub-electrode portions, and one suction portion may include a plurality of sub-electrode portions. May be configured.

In other words, by controlling the application of the voltage to the sub-electrodes 241 to 249 by the voltage controller 32, the substrate S is arranged in a direction (Y direction) that intersects with the suction progress direction (X direction) of the substrate S as described later. The three sub-electrodes 241, 244, and 247 can constitute one suction unit. That is, the voltage control unit 32 can independently control the order of applying the voltage to each of the three sub-electrode units 241, 244, and 247. By controlling the voltages to be simultaneously applied to the 244 and 247, the three sub-electrodes 241, 244 and 247 can function as one suction unit. It is sufficient that each of the plurality of suction units can independently suction the substrate S, and the specific physical structure and electric circuit structure may be changed.

<Adsorption and separation method and voltage control by electrostatic chuck system>
Hereinafter, a process of attracting and separating the substrate S and the mask M to and from the electrostatic chuck 24 and voltage control thereof will be described with reference to FIGS.

(Adsorption of substrate S)
FIG. 4 shows a step of adsorbing the substrate S on the electrostatic chuck 24. In the present embodiment, as shown in FIG. 4, the entire surface of the substrate S is not simultaneously attracted to the lower surface of the electrostatic chuck 24, but one end along the first side (short side) of the electrostatic chuck 24. From the other end to the other end. However, the present invention is not limited to this, and for example, the suction of the substrate S may progress from one diagonal corner of the electrostatic chuck 24 to another corner opposite thereto. Further, the suction of the substrate S may be performed from the center of the electrostatic chuck 24 toward the peripheral edge.

  In order for the substrate S to be sequentially sucked along the first side of the electrostatic chuck 24, a first voltage for sucking the substrate is applied to the plurality of sub-electrode units 241 to 249 on the first side of the electrostatic chuck 24. The order of application (application time) may be controlled so that the application is performed sequentially in the direction along the arrow, or the distance between the substrate S and the electrostatic chuck 24 may be along the first side of the electrostatic chuck 24. The structure of the substrate support unit 22 may be changed so as to be large, and the timing of applying the first voltage to the plurality of sub-electrodes 241 to 249 may be controlled so as to be simultaneous. In addition, among the plurality of voltages appearing in the present embodiment, the above-described first voltage corresponds to a first suction voltage that causes the electrostatic chuck 24 to suck the substrate S.

  4A to 4E, the substrate S is moved along the substrate suction direction (X direction) by controlling the voltage applied to the plurality of sub-electrodes 241 to 249 of the electrostatic chuck 24. 24 shows an embodiment of sequentially adsorbing at different positions in 24. Here, three sub-electrode portions 241, 244, and 247 arranged along the long side direction (Y direction) of the electrostatic chuck 24 in FIG. The second suction section). Further, in FIG. 3C, the three sub-electrodes 242, 245, and 248 at the center of the electrostatic chuck 24 constitute the second suction unit 42 (the second suction unit in the order of voltage application). Then, in FIG. 3C, the remaining three sub-electrodes 243, 246, and 249 form the third suction unit 43 (the third suction unit in which the voltage is applied in the third order). The description will be made on the premise of the above.

  First, the substrate S is carried into the vacuum chamber 21 of the film forming apparatus 11 and is placed on the support of the substrate support unit 22.

  Subsequently, the electrostatic chuck 24 descends and moves toward the substrate S placed on the support of the substrate support unit 22 (FIG. 4A).

  When the electrostatic chuck 24 is sufficiently close to or in contact with the substrate S, the voltage control unit 32 moves the first suction unit 41 along the first side (short side) of the electrostatic chuck 24 that is the substrate suction direction (X direction). Is controlled so that the first voltage (ΔV1) is sequentially applied to the third suction unit 43 from.

  That is, the voltage control unit 32 applies the first voltage (ΔV1) to the first suction unit 41 (FIG. 4B), the second suction unit 42 (FIG. 4C), and the third suction unit 43 in this order. (FIG. 4D).

  The first voltage (ΔV1) is set to a voltage large enough to securely hold the substrate S on the electrostatic chuck 24.

  As a result, the substrate S is attracted to the electrostatic chuck 24 by the third suction portion 43 via the central portion of the substrate S from one side along the Y direction corresponding to the first suction portion 41 of the substrate S. The substrate S proceeds toward the other side along the corresponding Y direction (that is, the suction of the substrate S proceeds in the X direction), and the substrate S is flattened without leaving wrinkles in the substrate central portion. It is attracted to the electrostatic chuck 24.

  In the present embodiment, it has been described that the first voltage (ΔV1) is applied in a state where the electrostatic chuck 24 is sufficiently close to or in contact with the substrate S, but before the electrostatic chuck 24 starts descending toward the substrate S. Alternatively, the first voltage (ΔV1) may be applied during the lowering.

  At a predetermined point in time after the step of attracting the substrate S to the electrostatic chuck 24 is completed, the voltage control unit 32 controls the voltage applied to the electrode unit of the electrostatic chuck 24 as shown in FIG. From the first voltage (ΔV1) to a second voltage (ΔV2) smaller than the first voltage (ΔV1).

  The second voltage (ΔV2) is a suction maintaining voltage for maintaining the substrate S in a state of being sucked by the electrostatic chuck 24, and is the first voltage (ΔV1) applied when the substrate S is sucked by the electrostatic chuck 24. ) Lower voltage. When the voltage applied to the electrostatic chuck 24 decreases to the second voltage (ΔV2), the amount of polarization charge induced on the substrate S correspondingly decreases as compared with the case where the first voltage (ΔV1) is applied. However, after the substrate S is once attracted to the electrostatic chuck 24 by the first voltage (ΔV1), the attracted state of the substrate is maintained even if a second voltage (ΔV2) lower than the first voltage (ΔV1) is applied. can do.

  As described above, by reducing the voltage applied to the electrode portion of the electrostatic chuck 24 to the second voltage (ΔV2), the time required to separate the substrate from the electrostatic chuck 24 can be reduced.

  In other words, when the substrate S is to be separated from the electrostatic chuck 24, even if the voltage value of the voltage applied to the electrode portion of the electrostatic chuck 24 is set to zero (0), the voltage between the electrostatic chuck 24 and the substrate S is immediately increased. It takes a considerable time (in some cases, about several minutes) for the electric charge induced at the interface between the electrostatic chuck 24 and the substrate S to disappear, instead of the electrostatic attraction of the electrostatic chuck disappearing. In particular, when the substrate S is attracted to the electrostatic chuck 24, usually, in order to secure the suction, it is more than the minimum electrostatic attraction (Fth) required to attract the substrate S to the electrostatic chuck 24. The first voltage (for example, ΔVmax shown in FIG. 5) is set so that a large electrostatic attraction acts on the substrate S. However, from the application of the first voltage until the substrate S can be separated. Takes a considerable amount of time.

  Therefore, in the present embodiment, in order to prevent the overall process time (Tact) from increasing due to the time required to separate the substrate S from the electrostatic chuck 24, the substrate S is not electrostatically chucked. At a predetermined time after the attraction to the electrostatic chuck 24, the voltage applied to the electrostatic chuck 24 is reduced to the second voltage (ΔV2).

  In the illustrated embodiment, the voltage applied to the first suction part 41 to the third suction part 43 of the electrostatic chuck 24 is simultaneously reduced to the second voltage (ΔV2), but the present invention is not limited to this. The timing at which the voltage is reduced to the second voltage (ΔV2) for each suction unit, that is, the timing of applying the second voltage (ΔV2) to the suction unit and the magnitude of the applied second voltage (ΔV2) may be different. . For example, the voltage may be sequentially reduced from the first suction unit 41 to the third suction unit 43 to the second voltage (ΔV2).

  As described above, after the voltage applied to the electrode portion of the electrostatic chuck 24 decreases to the second voltage (ΔV2), the substrate S attracted to the electrostatic chuck 24 and the mask M mounted on the mask support unit 23 Adjust (align) the relative position of. In the present embodiment, it has been described that the relative position adjustment (alignment) between the substrate S and the mask M is performed after the voltage applied to the electrode portion of the electrostatic chuck 24 decreases to the second voltage (ΔV2). However, the present invention is not limited to this, and the alignment step may be performed in a state where the first voltage (ΔV1) is applied to the electrode portion of the electrostatic chuck 24.

(Adsorption of mask M)
After the suction of the substrate S and the alignment adjustment with the mask M are completed, the mask M is further sucked to the electrostatic chuck 24 via the sucked substrate S. Specifically, by applying a third voltage (ΔV3) for attracting the mask M to the electrode portion of the electrostatic chuck 24, the mask M is attracted to the electrostatic chuck 24 via the substrate S. That is, the mask M is attracted to the lower surface of the substrate S that is attracted to the electrostatic chuck 24. Note that, among the voltages appearing in the present embodiment, the third voltage described above corresponds to a second attracting voltage for attracting the mask M to the electrostatic chuck via the substrate S.

FIG. 5 shows a step of causing the electrostatic chuck 24 to adsorb the mask M.
First, the electrostatic chuck 24 on which the substrate S is attracted is lowered toward the mask M by the electrostatic chuck Z actuator 28 (FIG. 5A).

  In a state where the lower surface of the substrate S attracted to the electrostatic chuck 24 is sufficiently close to or in contact with the mask M, the voltage control unit 32 causes the voltage applying unit 31 to apply the third voltage (ΔV3) to the electrode unit of the electrostatic chuck 24. Control to apply.

  The third voltage (ΔV3) is preferably higher than the second voltage (ΔV2), and is large enough to charge the mask M via the substrate S by electrostatic induction. Thus, the mask M can be attracted to the electrostatic chuck 24 via the substrate S. However, the present invention is not limited to this, and the third voltage (ΔV3) may be the same as the second voltage (ΔV2). Even if the third voltage (ΔV3) is the same as the second voltage (ΔV2), as described above, the relative distance between the electrostatic chuck 24 and the mask M, or the relative distance between the substrate S and the Since the relative distance from the mask M is reduced, even if the magnitude of the voltage applied to the electrode portion of the electrostatic chuck 24 is not made larger than the second voltage (ΔV2), the electrostatic induction on the substrate S is performed. Electrostatic induction can also be caused in the mask M by the polarized charges, and an attraction force enough to allow the mask M to be attracted to the electrostatic chuck 24 via the substrate S is obtained.

  The third voltage (ΔV3) may be smaller than the first voltage (ΔV1), or may be as large as the first voltage (ΔV1) in consideration of shortening of the process time (Tact).

  In the mask suction step illustrated in FIG. 5, the voltage control unit 32 simultaneously applies the third voltage (ΔV3) over the entire electrostatic chuck 24 so that no wrinkles are left on the mask M and the mask M can be suctioned onto the lower surface of the substrate S. Instead, the voltage is applied sequentially from the first suction unit 41 to the third suction unit 43 along the first side.

  That is, the voltage control unit 32 applies the third voltage (ΔV3) to the first suction unit 41 (FIG. 5B), the second suction unit 42 (FIG. 5C), and the third suction unit 43 in this order. (FIG. 5D).

Accordingly, the suction of the mask M onto the electrostatic chuck 24 is performed by the third suction unit 43 via the central portion of the mask M from one side along the Y direction corresponding to the first suction unit 41 of the mask M. The mask M is advanced toward the other side along the corresponding Y direction (that is, the suction of the mask M is advanced in the X direction), and the mask M is flattened without leaving wrinkles in the center of the mask M. It is attracted to the electrostatic chuck 24.

  In the present embodiment, it has been described that the third voltage (ΔV3) is applied in a state where the electrostatic chuck 24 is close to or in contact with the mask M. However, before the electrostatic chuck 24 starts descending toward the mask M, or Alternatively, the third voltage (ΔV3) may be applied during the lowering.

  At a predetermined point in time after the process of attracting the mask M to the electrostatic chuck 24 is completed, the voltage control unit 32 controls the voltage applied to the electrode unit of the electrostatic chuck 24 as shown in FIG. From the third voltage (ΔV3) to a fourth voltage (ΔV4) smaller than the third voltage (ΔV3).

  The fourth voltage (ΔV4) is a suction maintaining voltage for maintaining a suction state of the mask M sucked to the electrostatic chuck 24 via the substrate S, and is a fourth voltage when the mask M is sucked to the electrostatic chuck 24. 3 (ΔV3). When the voltage applied to the electrostatic chuck 24 decreases to the fourth voltage (ΔV4), the amount of polarization charge induced in the mask M correspondingly decreases as compared with the case where the third voltage (ΔV3) is applied. However, after the mask M is once attracted to the electrostatic chuck 24 by the third voltage (ΔV3), the attracted state of the mask is maintained even if a fourth voltage (ΔV4) lower than the third voltage (ΔV3) is applied. can do.

  As described above, by reducing the voltage applied to the electrode portion of the electrostatic chuck 24 to the fourth voltage (ΔV4), the time required to separate the mask M from the electrostatic chuck 24 can be reduced.

  That is, when the mask M is to be separated from the electrostatic chuck 24, even if the voltage value of the voltage applied to the electrode portion of the electrostatic chuck 24 is set to zero (0), the voltage between the electrostatic chuck 24 and the mask M is immediately changed. It takes a considerable time (in some cases, about several minutes) for the charges induced at the interface between the substrate S and the mask M to disappear, instead of the electrostatic attraction of the substrate S disappearing. In particular, when the mask M is attracted to the electrostatic chuck 24, a sufficiently large voltage is usually applied in order to secure the attraction and to shorten the time required for the attraction. After that, it takes a considerable time until the mask can be separated.

  Therefore, in the present embodiment, in order to prevent the overall process time (Tact) from increasing due to the time required to separate the mask M from the electrostatic chuck 24, the mask M is moved to the electrostatic chuck 24. Then, at a predetermined time, the voltage applied to the electrostatic chuck 24 is reduced to a fourth voltage (ΔV4).

  In the embodiment shown in FIG. 5, the voltage applied to the first suction part 41 to the third suction part 43 of the electrostatic chuck 24 is simultaneously reduced to the fourth voltage (ΔV4). The present invention is not limited to this, and the time at which the voltage is reduced to the fourth voltage (ΔV4) and the magnitude of the applied fourth voltage (ΔV4) may be different for each suction unit. For example, the voltage may be sequentially reduced from the first suction unit 41 to the third suction unit 43 to the fourth voltage (ΔV4).

  In this manner, in a state where the mask M is attracted to the electrostatic chuck 24 via the substrate S, a film forming process in which the evaporation material evaporated from the evaporation source 25 is formed on the substrate S via the mask M is performed. Will be In this embodiment, the mask M is held by the electrostatic chucking force of the electrostatic chuck 24. However, the present invention is not limited to this. By applying a magnetic force to the metal mask M, the mask M may be more securely brought into close contact with the substrate S.

(Separation of substrate S and mask M from electrostatic chuck 24)
When the film forming process is completed with the substrate S and the mask M being attracted to the electrostatic chuck 24, the attracted substrate S and the mask M are separated from the electrostatic chuck 24 by controlling the voltage applied to the electrostatic chuck 24. .

  FIG. 6 shows a step of separating the substrate S and the mask M from the electrostatic chuck 24.

  As shown in FIG. 6A, the voltage control unit 32 can separate the mask M from the voltage applied to the electrode unit of the electrostatic chuck 24 from the fourth voltage (ΔV4), which is the above-described suction maintaining voltage. To the fifth voltage (ΔV5). Here, the fifth voltage (ΔV5) is a mask separation voltage for separating only the mask M sucked via the substrate S while maintaining the suction state of the substrate S by the electrostatic chuck 24. It corresponds to the separation voltage. Therefore, the fifth voltage (ΔV5) is, of course, lower than the third voltage (ΔV3) applied when the mask M is attracted to the electrostatic chuck 24, and also causes the mask M to be attracted to the electrostatic chuck 24. The voltage is lower than the fourth voltage (ΔV4) applied in this case. In addition, the fifth voltage (ΔV5) is a voltage that is large enough to maintain the suction state of the substrate S by the electrostatic chuck 24 even when the mask M is separated.

  As an example, the fifth voltage (ΔV5) may be a voltage having substantially the same magnitude as the second voltage (ΔV2) described above. However, the present embodiment is not limited to this. If only the mask M can be separated while maintaining the suction state of the substrate S by the electrostatic chuck 24, the fifth voltage (ΔV5) becomes the second voltage (ΔV2). It may be higher or lower. However, as described above, the fifth voltage (ΔV5) is lower than the third voltage (ΔV3) and the fourth voltage (ΔV4).

  When the voltage applied to the electrostatic chuck 24 is reduced to a fifth voltage (ΔV5) that is substantially the same as the second voltage (ΔV2), the amount of electric charge induced in the mask M is accordingly reduced. (ΔV2) is reduced to substantially the same extent as when added. As a result, the suction state of the substrate S by the electrostatic chuck 24 is maintained, but the suction state of the mask M is not maintained, and the substrate S is separated from the electrostatic chuck 24.

  Although not shown in detail, in the step of FIG. 6A in which the voltage applied to the electrostatic chuck 24 is reduced to a fifth voltage (ΔV5), which is a mask separation voltage, for each suction unit of the electrostatic chuck 24, It is preferable to perform control so that the point of time when the voltage is lowered to the fifth voltage (ΔV5) is made different. In particular, as described above, when the mask M is suctioned by applying the mask suction voltage (ΔV3) sequentially from the first suction unit 41 to the third suction unit 43 in the process of suctioning the mask M (FIG. 5B Similarly, in the case of the mask M separation, a fifth voltage (ΔV5), which is a mask separation voltage, is sequentially applied from the first suction unit 41 to the third suction unit 43 during the mask M separation. It is preferable to control so that

  That is, control is performed such that the separation voltage is applied first to the region where the attraction voltage is applied first.

  In the case of the region of the mask M corresponding to the sub-electrode portion (the first suction portion 41 in the above example) of the electrostatic chuck 24 to which the suction voltage has been applied first, the electrostatic chuck 24 to which the suction voltage is applied later. Is longer than the region of the mask M corresponding to the sub-electrode portion (the third suction portion 43 in the above-described example), and therefore, the polarization charge remaining in the region is accordingly longer. The size of the quantity is also large.

In the embodiment according to the present invention, by controlling the mask separation voltage (ΔV5) to be sequentially applied from the region where the adsorption period is relatively long and the amount of polarization charge is large, the electrostatic capacity is controlled. The time until the entire mask M is separated from the chuck 24 can be further reduced. In addition, the region to which the mask separation voltage (ΔV5) is applied is sequentially expanded from the region where the amount of polarization charge due to adsorption is large, so that the region from the electrostatic chuck 24 in the mask M plane is removed. The separation timing can be made uniform.

  On the other hand, besides making the time when the voltage is lowered to the fifth voltage (ΔV5) different for each suction unit of the electrostatic chuck 24, the magnitude of the applied fifth voltage (ΔV5) may be changed for each suction unit. That is, in the case of the above-described example, the mask separation voltage (ΔV5) having a smaller absolute value is applied to the sub-electrode units 241, 244, 247 (the first suction unit 41) of the electrostatic chuck 24 to which the suction voltage has been applied first. Is controlled so that a mask separation voltage (ΔV5) having a larger absolute value is applied to the sub-electrode portions 243, 246, 249 (third suction portion 43) of the electrostatic chuck 24 to which the suction voltage is applied with a delay. May be. As described above, the magnitude of the fifth voltage (ΔV5) applied as the mask separation voltage is made different for each suction area in accordance with the order in which the suction voltage is applied within the range of the voltage that enables the mask separation. , The same effect can be obtained.

  Returning to FIG. 6, when the mask M is separated and only the substrate S is held by suction on the electrostatic chuck 24 in this manner, the electrostatic chuck 24 on which the substrate S is suctioned by the electrostatic chuck Z actuator 28 is raised. (FIG. 6 (b)).

  Subsequently, the voltage control unit 32 changes the voltage applied to the electrode unit of the electrostatic chuck 24 from the fifth voltage (ΔV5) to the sixth voltage (ΔV6) (FIG. 6C). Here, the sixth voltage (ΔV6) is a substrate separation voltage for separating the substrate S attracted to the electrostatic chuck 24 from the electrostatic chuck 24, and corresponds to the second separation voltage. Therefore, the sixth voltage (ΔV6) is a voltage lower than the fifth voltage (ΔV5) applied when only the substrate S is being attracted and held by the electrostatic chuck 24.

  For example, the voltage control unit 32 applies the sixth voltage (ΔV6) with the voltage value applied to the electrode unit of the electrostatic chuck 24 set to zero (0) (that is, turns off), or changes the voltage of the opposite polarity to the It may be applied as six voltages (ΔV6). As a result, the polarization charges induced on the substrate S are removed, and the substrate S is separated from the electrostatic chuck 24.

  Although not shown in detail, in the step of FIG. 6C in which the voltage applied to the electrostatic chuck 24 is reduced to the sixth voltage (ΔV6), which is the substrate separation voltage, the mask separation voltage (the first voltage) is also used. Similarly to the time of application of the fifth voltage ΔV5), the time at which the voltage is lowered to the sixth voltage (ΔV6) differs for each suction portion of the electrostatic chuck 24, or the magnitude of the applied sixth voltage (ΔV6) differs for each suction portion. The voltage value can be controlled.

  In other words, when the substrate S is suctioned by applying the substrate suction voltage (ΔV1) sequentially from the first suction portion 41 to the third suction portion 43 in the process of sucking the substrate S (see FIGS. 4B to 4C). (See (d)), when the substrate S is separated, similarly to the separation of the mask M, the substrate separation voltage (ΔV6) is sequentially applied from the first suction part 41 to the third suction part 43. It is preferable to control. That is, the substrate separation voltage (ΔV6) is applied first to the first suction unit 41, which is the area where the suction voltage is applied first, and then the substrate separation voltage (ΔV6) is applied to the second suction unit 42. . Finally, the substrate separation voltage (ΔV6) is applied to the third suction unit to which the suction voltage has been applied later. Alternatively, the magnitude of the substrate separation voltage (ΔV6) is controlled so as to be different for each adsorption region in accordance with the order in which the adsorption voltage is applied within the range of the voltage that allows the substrate to be separated. A substrate separation voltage (ΔV6) having a larger absolute value is applied to the first suction unit 41 applied earlier, and a substrate having a smaller absolute value is applied to the third suction unit 43 to which the suction voltage is applied with a delay. It is preferable to control so as to apply the separation voltage (ΔV6).

  As a result, as in the case of the above-described separation of the mask M, the time until the entire substrate S is separated from the electrostatic chuck 24 can be further reduced, and the time from the electrostatic chuck 24 in the plane of the substrate S can be reduced. The separation timing can be made uniform. Note that, as described above, the voltage of the sub-electrode portions constituting each suction portion can be independently controlled. Therefore, not only the mask separation voltage (ΔV5) and the substrate separation voltage (ΔV6) are sequentially applied from the first suction unit to the third suction unit as described above, but also the mask separation voltage (ΔV5) After changing the voltage value of the separation voltage (ΔV6), it is also possible to simultaneously apply the voltage to each suction unit. Further, the control for changing the voltage value of the mask separation voltage (ΔV5) and the voltage value of the substrate separation voltage (ΔV6) in accordance with each suction unit and the control for changing the order in which the voltages are applied may be performed simultaneously. By appropriately performing the two controls, the separation timing from the electrostatic chuck 24 can be more efficiently uniformized. Although the above description has been made on the assumption that the polarity of the mask separation voltage (ΔV5) is the same as that of the suction voltage, the present invention is not limited to this. That is, a voltage having a polarity opposite to the applied voltage may be applied as the mask separation voltage or the substrate separation voltage. In that case, the absolute value of the voltage value to be applied may be increased as the suction voltage is applied earlier in the suction unit. Since the separation voltage applied to each suction unit differs depending on the magnitude of the polarization charge amount for each suction unit, for example, a separation voltage having the same polarity as the suction voltage is applied to the first suction unit, In some cases, a separation voltage having a polarity opposite to the suction voltage is applied to the suction unit.

  Hereinafter, with reference to FIG. 7, the control of the voltage applied to the electrode portion or the sub-electrode portion of the electrostatic chuck 24 in the process of holding the substrate S and the mask M by suction by the electrostatic chuck 24 will be described.

  First, in order to attract the substrate S to the electrostatic chuck 24, a first voltage (ΔV1) is applied to the electrode portion or the sub-electrode portion of the electrostatic chuck 24 at a predetermined time (t1).

  The first voltage (ΔV1) is large enough to obtain an electrostatic attraction force enough to attract the substrate S to the electrostatic chuck 24, and the first voltage (ΔV1) is applied to the electrode portion or the sub-electrode portion of the electrostatic chuck 24. It is preferable that the voltage be as large as possible in order to reduce the time required from the application of the magnetic field to the generation of polarization charges on the substrate S. For example, it is preferable to apply the maximum voltage (ΔVmax) that can be applied by the voltage application unit 31.

  Subsequently, a polarization charge is induced on the substrate S by the applied first voltage, and after the substrate S is attracted to the electrostatic chuck 24 with a sufficient electrostatic attraction force (t = t2), the electrode of the electrostatic chuck 24 is turned off. The voltage applied to the section or the sub-electrode section is reduced to the second voltage (ΔV2). The second voltage (ΔV2) may be, for example, the lowest voltage (ΔVmin) that can maintain the state in which the substrate S is attracted to the electrostatic chuck 24.

  Further, in order to attract the mask M to the electrostatic chuck 24 via the substrate S, the voltage applied to the electrode portion or the sub-electrode portion of the electrostatic chuck 24 is increased to a third voltage (ΔV3) (t = t3). . Since the third voltage (ΔV3) is a voltage for attracting the mask M to the electrostatic chuck 24 via the substrate S, it is preferable that the third voltage (ΔV2) be equal to or larger than the second voltage (ΔV2), and the process time is taken into consideration. It is more preferable that the voltage is the maximum voltage (ΔVmax) that can be applied by the voltage application unit 31.

In the present embodiment, in order to reduce the time required to separate the substrate S and the mask M from the electrostatic chuck 24 after the film forming process, the voltage applied to the electrode portion or the sub-electrode portion of the electrostatic chuck 24 is changed to the first voltage. The voltage is not maintained at the third voltage (ΔV3), but is reduced to a smaller fourth voltage (ΔV4) (t = t4). However, in order to maintain the state where the mask M is attracted to the electrostatic chuck 24 via the substrate S, the fourth voltage (ΔV4) is required to maintain the state where only the substrate S is attracted to the electrostatic chuck 24. It is preferable that the voltage is equal to or higher than the required second voltage (ΔV2).

  After the film formation process is completed (t5), in order to separate the mask M from the electrostatic chuck 24, first, the voltage applied to the electrode portion of the electrostatic chuck 24 can be maintained in the state of suction of only the substrate S. The fifth voltage (ΔV5). The fifth voltage (ΔV5) is a voltage having substantially the same magnitude as the second voltage (ΔV2) required to maintain a state where the mask M is separated and only the substrate S is attracted to the electrostatic chuck 24. . As an example, it is preferable that the fifth voltage (ΔV5) is a minimum voltage (ΔVmin) necessary to maintain a state where the mask M is separated and only the substrate S is attracted to the electrostatic chuck 24. The magnitude relationship between the applied voltages described above is the case where the polarities of the first to fifth voltages applied to the electrode portion or the sub-electrode portion of the electrostatic chuck 24 are all the same. When the fifth voltage (ΔV5) and the sixth voltage (ΔV6), which are the separation voltages, have opposite polarities with respect to the first to fourth voltages which are the attraction voltages, the magnitude of the absolute value of the first to sixth voltages is large. The relationship is as shown in FIG.

  As a result, after the mask M is separated, the voltage value of the voltage applied to the electrode portion of the electrostatic chuck 24 is reduced to zero (0) (that is, turned off), or a voltage of the opposite polarity is applied ( t = t6). Thereby, the polarization charges induced on the substrate S are removed, and the substrate S can be separated from the electrostatic chuck 24.

<Deposition process>
Hereinafter, a film forming method employing voltage control of the electrostatic chuck according to the present embodiment will be described.

  With the mask M placed on the mask support unit 23 in the vacuum chamber 21, the substrate is carried into the vacuum chamber 21 of the film forming apparatus 11 by the transfer robot 14 in the transfer chamber 13.

  The hand of the transport robot 14 that has entered the vacuum vessel 21 descends, and places the substrate S on the support of the substrate support unit 22.

  Subsequently, after the electrostatic chuck 24 descends toward the substrate S and sufficiently approaches or contacts the substrate S, the first voltage (ΔV1) is applied to the electrostatic chuck 24 to attract the substrate S.

  In one embodiment of the present invention, in order to maximize the time required to separate the substrate S from the electrostatic chuck 24, after the substrate S is completely attracted to the electrostatic chuck 24, The voltage applied to the chuck 24 is reduced from the first voltage (ΔV1) to the second voltage (ΔV2). Even if the voltage applied to the electrostatic chuck 24 is reduced to the second voltage (ΔV2), it takes time for the polarized charges induced on the substrate to be discharged by the first voltage (ΔV1). The attraction force to the substrate by the electric chuck 24 can be maintained.

  In a state where the substrate S is attracted to the electrostatic chuck 24, the substrate S is lowered toward the mask M in order to measure a relative displacement of the substrate S with respect to the mask M. In another embodiment of the present invention, in order to surely prevent the substrate S from dropping from the electrostatic chuck 24 in the process of lowering the substrate S sucked to the electrostatic chuck 24, the lowering process of the substrate S is performed. Is completed (that is, immediately before the alignment step described later starts), the voltage applied to the electrostatic chuck 24 is reduced to the second voltage (ΔV2).

When the substrate S is lowered to the measurement position, the alignment camera 20 photographs the alignment marks formed on the substrate S and the mask M, and measures the relative displacement between the substrate S and the mask M. In another embodiment of the present invention, in order to further improve the accuracy of the measurement process of the relative position between the substrate S and the mask M, the electrostatic chuck 24 is completed after the measurement process for alignment is completed (during the alignment process). Is reduced to the second voltage (ΔV2). That is, the measurement is performed by photographing the alignment mark between the substrate S and the mask M in a state where the substrate S is strongly attracted to the electrostatic chuck 24 by the first voltage (ΔV1) (a state in which the substrate S is kept more flat). The accuracy of the process can be improved.

  As a result of the measurement, if it is found that the relative displacement of the substrate S with respect to the mask M exceeds the threshold value, the substrate S that has been attracted to the electrostatic chuck 24 is moved in the horizontal direction (XYθ direction), and Is adjusted (aligned) with respect to the mask M. In another embodiment of the present invention, after such a position adjustment process is completed, the voltage applied to the electrostatic chuck 24 is reduced to the second voltage (ΔV2). Thereby, accuracy can be further improved over the entire alignment process (relative position measurement and position adjustment).

  After the alignment step, the mask M is attracted to the electrostatic chuck 24 via the substrate S. Therefore, a third voltage (ΔV3) having a magnitude equal to or higher than the second voltage is applied to the electrode portion or the sub-electrode portion of the electrostatic chuck 24.

  After the mask M suction process is completed, the voltage applied to the electrode portion or the sub-electrode portion of the electrostatic chuck 24 is changed to maintain the state in which the substrate S and the mask M are sucked by the electrostatic chuck 24. To the fourth voltage (ΔV4), which is a voltage that can be obtained. Thus, the time required to separate the substrate S and the mask M from the electrostatic chuck 24 after the completion of the film forming process can be reduced.

  Subsequently, the shutter of the evaporation source 25 is opened, and the evaporation material is evaporated on the substrate S via the mask M.

  After vapor deposition to a desired thickness, the voltage applied to the electrode portion or sub-electrode portion of the electrostatic chuck 24 is reduced to a fifth voltage (ΔV5) to separate the mask M, and only the substrate S is placed on the electrostatic chuck 24. In the suction state, the substrate S is raised by the electrostatic chuck Z actuator 28. Here, the fifth voltage (ΔV5) is a magnitude required to maintain a state where the mask M is separated and only the substrate S is attracted to the electrostatic chuck 24, and is equal to the second voltage (ΔV2). Voltages of substantially the same magnitude.

  Further, the hand of the transfer robot 14 enters the vacuum vessel 21 of the film forming apparatus 11, and a voltage of zero (0) or a reverse polarity (ΔV6) is applied to the electrode portion or the sub-electrode portion of the electrostatic chuck 24 (t6). ), The substrate S is separated from the electrostatic chuck 24. Thereafter, the substrate S on which the vapor deposition has been completed is carried out of the vacuum vessel 21 by the transfer robot 14.

<Electronic device manufacturing method>
Next, an example of a method for manufacturing an electronic device using the film forming apparatus of this embodiment will be described. Hereinafter, a configuration and a manufacturing method of an organic EL display device will be described as an example of an electronic device.

  First, an organic EL display device to be manufactured will be described. FIG. 8A shows an overall view of the organic EL display device 60, and FIG. 8B shows a cross-sectional structure of one pixel.

As shown in FIG. 8A, in a display area 61 of the organic EL display device 60, a plurality of pixels 62 having a plurality of light emitting elements are arranged in a matrix. Although details will be described later, each of the light-emitting elements has a structure including an organic layer sandwiched between a pair of electrodes. Here, the pixel refers to a minimum unit capable of displaying a desired color in the display area 61. In the case of the organic EL display device according to the present embodiment, the first light emitting element 62R that emits light different from each other
, The second light emitting element 62G and the third light emitting element 62B constitute a pixel 62. The pixel 62 is often formed of a combination of a red light emitting element, a green light emitting element, and a blue light emitting element, but may be a combination of a yellow light emitting element, a cyan light emitting element, and a white light emitting element. There is no restriction.

  FIG. 8B is a schematic partial cross-sectional view taken along a line AB in FIG. 8A. The pixel 62 includes, on a substrate 63, an organic EL element including an anode 64, a hole transport layer 65, one of light-emitting layers 66R, 66G, and 66B, an electron transport layer 67, and a cathode 68. I have. Among these, the hole transport layer 65, the light emitting layers 66R, 66G, 66B, and the electron transport layer 67 correspond to the organic layers. In the present embodiment, the light emitting layer 66R is an organic EL layer emitting red light, the light emitting layer 66G is an organic EL layer emitting green light, and the light emitting layer 66B is an organic EL layer emitting blue light. The light-emitting layers 66R, 66G, and 66B are formed in patterns corresponding to light-emitting elements that emit red, green, and blue light, respectively (sometimes referred to as organic EL elements). The anode 64 is formed separately for each light emitting element. The hole transport layer 65, the electron transport layer 67, and the cathode 68 may be formed in common with the plurality of light emitting elements 62R, 62G, 62B, or may be formed for each light emitting element. Note that an insulating layer 69 is provided between the anodes 64 to prevent the anode 64 and the cathode 68 from being short-circuited by foreign matter. Further, since the organic EL layer is deteriorated by moisture or oxygen, a protective layer 70 for protecting the organic EL element from moisture or oxygen is provided.

  In FIG. 8B, the hole transport layer 65 and the electron transport layer 67 are shown as one layer. However, depending on the structure of the organic EL display element, the hole transport layer 65 and the electron transport layer 67 are formed of a plurality of layers including a hole block layer and an electron block layer. May be done. Further, a hole injection layer having an energy band structure capable of smoothly injecting holes from the anode 64 to the hole transport layer 65 is provided between the anode 64 and the hole transport layer 65. It can also be formed. Similarly, an electron injection layer may be formed between the cathode 68 and the electron transport layer 67.

  Next, an example of a method for manufacturing an organic EL display device will be specifically described.

  First, a substrate (not shown) for driving an organic EL display device and a substrate 63 on which an anode 64 is formed are prepared.

  An acrylic resin is formed on the substrate 63 on which the anode 64 is formed by spin coating, and the acrylic resin is patterned by lithography so that an opening is formed in a portion where the anode 64 is formed, thereby forming an insulating layer 69. . This opening corresponds to a light emitting area where the light emitting element actually emits light.

  The substrate 63 on which the insulating layer 69 has been patterned is carried into the first organic material film forming apparatus, the substrate is held by the substrate holding unit and the electrostatic chuck, and the hole transport layer 65 is placed on the anode 64 in the display area. Is formed as a common layer. The hole transport layer 65 is formed by vacuum evaporation. Actually, since the hole transport layer 65 is formed in a size larger than the display area 61, a high-definition mask is unnecessary.

  Next, the substrate 63 on which the hole transport layer 65 is formed is carried into the second organic material film forming apparatus, and is held by the substrate holding unit and the electrostatic chuck. The alignment between the substrate and the mask is performed, the substrate is placed on the mask, and a red light emitting layer 66R is formed on a portion of the substrate 63 where the red light emitting element is arranged.

Similarly to the formation of the light emitting layer 66R, the third organic material film forming apparatus forms the green light emitting layer 66G, and the fourth organic material forming apparatus forms the blue light emitting layer 66B. . After the film formation of the light emitting layers 66R, 66G and 66B is completed, the display area 6 is formed by the fifth film forming apparatus.
An electron transport layer 67 is formed on the entire surface of the substrate 1. The electron transport layer 67 is formed as a layer common to the three color light emitting layers 66R, 66G, and 66B.

  The substrate formed up to the electron transport layer 67 is moved by a metal deposition material film forming apparatus to form a cathode 68.

  According to the present invention, after the substrate and the mask are attracted to the electrostatic chuck 24, the voltage applied to the electrostatic chuck 24 is reduced at a predetermined time in advance. After the film formation process is completed, when the substrate and the mask are sequentially separated from the electrostatic chuck 24, the voltage applied to the electrostatic chuck 24 is maintained at a constant level while the suction to the substrate is maintained, but only the mask is separated. The mask is separated from the electrostatic chuck 24 first by lowering the voltage to a voltage that can be used. Thereafter, the voltage value of the voltage applied to the electrostatic chuck 24 is reduced to zero (0) (that is, the voltage is turned off), or a voltage of the opposite polarity is applied to the electrostatic chuck 24 so that the substrate is brought into contact with the electrostatic chuck 24. Separate from As a result, the time required to separate at least one of the substrate and the mask from the electrostatic chuck 24 can be reduced, and the process time can be reduced.

  Thereafter, the organic EL display device 60 is completed by moving to a plasma CVD device to form the protective layer 70.

  If the substrate 63 on which the insulating layer 69 is patterned is carried into a film forming apparatus and is exposed to an atmosphere containing moisture and oxygen until the film formation of the protective layer 70 is completed, the light emitting layer made of the organic EL material becomes It may be deteriorated by moisture or oxygen. Therefore, in this embodiment, the transfer of the substrate between the film forming apparatuses is performed in a vacuum atmosphere or an inert gas atmosphere.

  The above embodiment is merely an example of the present invention, and the present invention is not limited to the configuration of the above embodiment, and may be appropriately modified within the scope of the technical idea.

1: Cluster device 11: Film forming device 12: Mask stock device 13: Transfer chamber 14: Transfer robot 20: Alignment camera 21: Vacuum container 22: Substrate support unit 23: Mask support unit 24: Electrostatic chuck 25: Evaporation source 28: electrostatic chuck Z actuator 29: position adjusting mechanism 30: electrostatic chuck system 31: voltage applying unit 32: voltage control unit 33: electrode pairs 41 to 43: first to third suction units 241 to 249: sub Electrode section 331: first electrode 332: second electrode

Claims (31)

An electrostatic chuck including a plurality of electrode parts,
A voltage application unit for applying a voltage to the electrode unit of the electrostatic chuck,
A voltage control unit for controlling the application of a voltage by the voltage application unit,
The voltage control unit is independently provided for each of the plurality of electrode units of the electrostatic chuck to which the first object to be adsorbed and the second object to be adsorbed are interposed via the first object to be adsorbed. The electrostatic chuck system according to claim 1, wherein the voltage applying unit is controlled to apply a first separation voltage for separating the second object from the first object. The voltage control unit may further include, after the second object to be separated is separated by applying the first separation voltage, a second separation voltage for separating the first object to be separated from the electrostatic chuck to the plurality of electrode units. 2. The electrostatic chuck system according to claim 1, wherein the voltage application unit is controlled so that the voltage application unit applies the voltage independently of each other. 3. The first separation voltage is a voltage that separates only the second object to be attracted from the first object to be attracted while the first object to be attracted is held by the electrostatic chuck. The electrostatic chuck system according to claim 2. 4. The electrostatic chuck system according to claim 2, wherein the first separation voltage has a larger absolute value than the second separation voltage. 5. The second separation voltage has a voltage value of zero (0) or a voltage having a polarity opposite to that of a chucking voltage when the first chuck and the second chuck are chucked to the electrostatic chuck. The electrostatic chuck system according to any one of claims 2 to 4, wherein: The voltage control unit may be configured such that when independently applying the first separation voltage to each of the plurality of electrode units, the application timing of the first separation voltage to each of the plurality of electrode units is different. The electrostatic chuck system according to claim 2, wherein the electrostatic chuck system is controlled. The voltage control unit is configured to control the timing of applying the first separation voltage to each of the plurality of electrode units, and to control the time when the second adsorption target is adsorbed via the first adsorption target. 7. The method according to claim 6, wherein the first separation voltage is controlled so as to be applied to each of the plurality of electrode units in the same order as the order in which the attraction voltage is applied to each of the plurality of electrode units. An electrostatic chuck system as described. The voltage control unit, when independently applying the first separation voltage to each of the plurality of electrode units, has a different magnitude of the first separation voltage applied to each of the plurality of electrode units. The electrostatic chuck system according to any one of claims 2 to 7, wherein the electrostatic chuck system is controlled as follows. When controlling the magnitude of the first separation voltage applied to each of the plurality of electrode units, the voltage control unit may control the first separation voltage to be applied to the second adsorption unit via the first adsorption unit. In the case of a voltage having the same polarity as the adsorption voltage at the time of adsorbing the body, an adsorption voltage at the time of adsorbing the second adsorbent via the first adsorbent is applied to each of the plurality of electrode units. In accordance with the order, a voltage having a smaller absolute value is applied to the electrode unit to which the adsorption voltage when the second adsorption target is adsorbed via the first adsorption target is applied first among the plurality of electrode units. The electrostatic chuck system according to claim 8, wherein the control is performed such that the voltage is applied. The voltage control unit is configured to control the magnitude of the first separation voltage to be applied to each of the plurality of electrode units, when the first separation voltage is applied to the second object via the first object. In the case of a voltage having a polarity opposite to the adsorption voltage when adsorbing the adsorbent, the adsorption voltage when adsorbing the second adsorbent via the first adsorbent is applied to each of the plurality of electrode units. In accordance with the order of application, the absolute value is applied to the electrode portion of the plurality of electrode portions to which the adsorption voltage when the second adsorption object is adsorbed via the first adsorption object is applied first. The electrostatic chuck system according to claim 8, wherein the control is performed such that a higher voltage is applied. The voltage control unit may be configured such that when independently applying the second separation voltage to each of the plurality of electrode units, the application timing of the second separation voltage to each of the plurality of electrode units is different. The electrostatic chuck system according to claim 2, wherein the electrostatic chuck system is controlled. The voltage control unit, when controlling the timing of application of the second separation voltage to each of the plurality of electrode units, the adsorption voltage when adsorbing the first adsorbent to the electrode unit is the plurality of the plurality of electrode units The electrostatic chuck system according to claim 11, wherein control is performed such that the second separation voltage is applied to each of the plurality of electrode units in the same order as the order in which the plurality of electrode units is applied. . When the voltage control unit independently applies the second separation voltage to each of the plurality of electrode units, the magnitude of the second separation voltage applied to each of the plurality of electrode units is different. The electrostatic chuck system according to any one of claims 2 to 12, wherein the electrostatic chuck system is controlled as follows. The voltage control unit is configured to control the first separation unit to apply the second separation voltage to the electrode unit when controlling the magnitude of the absolute value of the second separation voltage applied to each of the plurality of electrode units. In the case of a voltage having a polarity opposite to that of the adsorption voltage at the time of adsorption, the adsorption voltage at the time of adsorbing the first object to be adsorbed on the electrode portion is adjusted in the order in which the adsorption voltage is applied to each of the plurality of electrode portions. Controlling that an electrode having a larger absolute value is applied to an electrode to which an adsorption voltage is applied first when the first object is adsorbed to the electrode among the plurality of electrodes. The electrostatic chuck system according to claim 13, wherein: A film forming apparatus for forming a film on a substrate via a mask,
A film forming apparatus comprising: the electrostatic chuck system according to any one of claims 1 to 14 for adsorbing a substrate as a first object to be adsorbed and a mask as a second object to be adsorbed. . A method for separating an object to be attracted from the electrode unit of an electrostatic chuck including a plurality of electrode units,
The second object to be adsorbed is moved from the first object to be adsorbed to the electrode portion of the electrostatic chuck to which the first object to be adsorbed and the second object to be adsorbed via the first object to be adsorbed are attached. Applying a first separation voltage for separation,
The method of applying a first separation voltage, wherein the first separation voltage is independently applied to each of the plurality of electrode units. Further, after the second object is separated from the first object by application of the first separation voltage, the second separation voltage for separating the first object from the electrostatic chuck is changed to the plurality of voltages. 17. The method according to claim 16, further comprising the step of independently applying a voltage to each of the electrode portions. The first separation voltage is a voltage that separates only the second object to be adsorbed from the first object to be adsorbed in a state where the first object to be adsorbed is maintained at the electrode portion. Item 18. The method for separating a substance to be adsorbed according to Item 17. 19. The method according to claim 17, wherein the first separation voltage has a larger absolute value than the second separation voltage. The second separation voltage has a voltage value of zero (0) or a voltage having a polarity opposite to that of a suction voltage when the first chuck and the second chuck are held on the electrostatic chuck. The method for separating an object to be adsorbed according to any one of claims 17 to 19, characterized in that: 18. The time when the first separation voltage is applied to each of the plurality of electrode units independently when the first separation voltage is independently applied to each of the plurality of electrode units. 21. The method for separating a substance to be adsorbed according to any one of 20 to 20. The first separation voltage is applied to the plurality of electrodes in the same order as the order in which the attraction voltage when the second to-be-adsorbed object is adsorbed via the first to-be-adsorbed object is applied to each of the plurality of electrode units. 22. The method for separating an object to be adsorbed according to claim 21, wherein the voltage is applied to each of the sections. When the first separation voltage is independently applied to each of the plurality of electrode units, the magnitude of the first separation voltage applied to each of the plurality of electrode units is different. Item 23. The method for separating a substance to be adsorbed according to any one of Items 17 to 22. When the first separation voltage is a voltage having the same polarity as an adsorption voltage when the second adsorption object is adsorbed via the first adsorption object, the second adsorption operation is performed via the first adsorption object. The second adsorption target is adsorbed through the first adsorption target among the plurality of electrode portions in accordance with the order in which the adsorption voltage when adsorbing the body is applied to each of the plurality of electrode portions. 24. The method according to claim 23, wherein the first separation voltage having a smaller absolute value is applied to the electrode portion to which the suction voltage at the time has been applied first. When the first separation voltage is a voltage having a polarity opposite to that of the adsorption voltage when the second adsorption object is adsorbed via the first adsorption object, the second separation voltage is applied via the first adsorption object. In accordance with the order in which the adsorption voltage at the time of adsorbing the object to be adsorbed is applied to each of the plurality of electrode units, the second object to be adsorbed is passed through the first object to be adsorbed among the plurality of electrode units. 24. The method according to claim 23, wherein the first separation voltage having a larger absolute value is applied to the electrode portion to which the suction voltage at the time of suction is applied first. 18. The application timing of the second separation voltage to each of the plurality of electrode units when the second separation voltage is independently applied to each of the plurality of electrode units. 26. The method for separating an object to be adsorbed according to any one of items 25 to 25. The second separation voltage is applied to each of the plurality of electrode units in the same order as the order in which the adsorption voltage when the first object is adsorbed to the electrode unit is applied to each of the plurality of electrode units. The method for separating an object to be adsorbed according to claim 26, characterized in that: When the second separation voltage is independently applied to each of the plurality of electrode units, the magnitude of the second separation voltage applied to each of the plurality of electrode units is different. Item 28. The method for separating an object to be adsorbed according to any one of Items 18 to 27. When the second separation voltage is a voltage having a polarity opposite to that of the adsorption voltage when the first adsorption object is adsorbed on the electrode portion, the adsorption voltage when the first adsorption object is adsorbed on the electrode portion. In accordance with the order in which the plurality of electrode portions are applied to each of the plurality of electrode portions. The method according to claim 28, wherein the second separation voltage having a larger absolute value is applied. A film forming method for forming a deposition material on a substrate via a mask,
Loading the mask into a vacuum vessel;
Loading the substrate into the vacuum vessel;
Applying a first chucking voltage to an electrode portion of the electrostatic chuck to chuck the substrate to the electrostatic chuck;
Applying a second chucking voltage to the electrode unit to chuck the mask on the electrostatic chuck via the substrate;
In a state where the substrate and the mask are attracted to the electrostatic chuck, a vapor deposition material is evaporated, and a film of the vapor deposition material is formed on the substrate through the mask.
30. The mask as a second object to be adsorbed and the substrate as the first object to be adsorbed from the electrostatic chuck by using the object to be adsorbed separation method according to claim 16. And a step of sequentially separating the layers. A method for manufacturing an electronic device, comprising: manufacturing an electronic device by using the film forming method according to claim 30.

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