JP2021098883A - Film deposition apparatus, film deposition method using the same and manufacturing method of electronic device - Google Patents

Abstract

To effectively prevent a generation of a wrinkle when chucking to an electrostatic chuck.SOLUTION: A film deposition apparatus for depositing a film deposition material on a substrate through a mask includes a substrate support part which is arranged in a chamber and supports a peripheral part of the substrate, substrate chucking means which is arranged above the substrate support part in the chamber and chucks the substrate supported by the substrate support part, and a control part for controlling up and down of the substrate support part toward the substrate chucking means. The substrate support part includes first and second support parts for supporting the vicinity of a corner of the substrate and a third support part for supporting a different part. The control part independently controls up and down of the first through third support parts.SELECTED DRAWING: Figure 3

Description

The present invention relates to a film forming apparatus, a film forming method using the film forming apparatus, and a method for manufacturing an electronic device.

In the manufacture of an organic EL display device (organic EL display), when the organic light emitting element (organic EL element; OLED) constituting the organic EL display device is formed, the vapor deposition material evaporated from the evaporation source of the film forming apparatus is used. An organic layer or a metal layer is formed by vapor-depositing the substrate through a mask on which a pixel pattern is formed.

In the upward vapor deposition method (depot-up) film forming apparatus, the evaporation source is provided in the lower part of the vacuum vessel of the film forming apparatus, the substrate is arranged in the upper part of the vacuum vessel, and vapor deposition is carried out on the lower surface of the substrate. In such an upward vapor deposition type film forming apparatus, the substrate supports the peripheral edge of the lower surface by the support portion of the substrate holder so as not to damage the organic substance layer / electrode layer formed on the lower surface which is the film forming surface. In this case, as the size of the substrate increases, the central portion of the substrate, which is not supported by the support portion of the substrate holder, bends due to the weight of the substrate, which is one of the factors that reduce the vapor deposition accuracy. Even in a film forming apparatus other than the upward vapor deposition method, bending due to the weight of the substrate may occur.

As a method for reducing the bending due to the weight of the substrate, a technique using an electrostatic chuck is being studied. That is, by installing the electrostatic chuck on the upper part of the substrate and attracting the upper surface of the substrate supported by the support portion of the substrate holder to the electrostatic chuck, the central portion of the substrate is pulled by the electrostatic attraction of the electrostatic chuck. Therefore, the deflection of the substrate can be reduced.

However, in the method of sucking the substrate from above using the electrostatic chuck in this way, if the entire surface of the substrate is to be sucked at the same time, the substrate is not flatly attracted to the electrostatic chuck, and wrinkles occur especially in the central portion. In some cases.

That is, the substrate supported by the substrate support portion is raised toward the electrostatic chuck (or the electrostatic chuck is lowered toward the substrate), and the substrate and the electrostatic chuck are in close proximity to each other or in contact with each other. When an adsorption voltage is applied to the entire surface, the peripheral edge of the substrate supported by the support portion is attracted to the electrostatic chuck before the bent central portion, so that the deflection of the central portion of the substrate is not sufficiently escaped. I will remain.

Although a technique for suppressing the occurrence of wrinkles at the time of adsorption to the electrostatic chuck has been studied, there is still a problem that the occurrence of wrinkles cannot be sufficiently suppressed.

Therefore, in view of the above problems, it is an object of the present invention to more effectively suppress the occurrence of wrinkles at the time of adsorption to the electrostatic chuck.

The film forming apparatus according to an embodiment of the present invention is a film forming apparatus that deposits a film forming material on a substrate via a mask, and is arranged in a chamber and has a substrate support portion that supports a peripheral portion of the substrate. A substrate suction means for sucking the substrate, which is arranged above the substrate support portion and supported by the substrate support portion, and a control unit for controlling the elevating and lowering of the substrate support portion toward the substrate suction means. The substrate support portion includes
A first support portion that supports the vicinity of the first corner of each of two adjacent sides via the first corner of the substrate, and a second corner that is diagonal to the first corner of the substrate. A second support portion that supports the vicinity of the second corner of each of the two adjacent sides, and a third support portion that supports the first support portion and a portion different from the second support portion. The control unit includes at least a support unit, and the control unit independently controls the first to third support units to move up and down.

The film forming method according to an embodiment of the present invention is a film forming method for forming a film forming material on a substrate through a mask in a chamber of a film forming apparatus, and is a peripheral edge of the substrate carried into the chamber. A step of supporting the portion with the substrate support portion, a step of adsorbing the back surface of the substrate on the opposite side of the film formation surface to the substrate suction means arranged above the substrate support portion, and a step of being discharged from the film formation source. The step of forming a film material on the film-forming surface of the substrate via the mask is included, and the step of adsorbing the film material raises the substrate support portion toward the substrate adsorption means and supports the film material by the substrate support portion. The substrate support portion includes a step of bringing the formed substrate close to the substrate suction means, and the substrate support portion supports the vicinity of the first corner of each of the two adjacent sides via the first corner of the substrate. A support portion, a second support portion that supports the vicinity of the second corner of each of two adjacent sides via a second corner that is diagonal to the first corner of the substrate, and the first support portion. In the step of raising the substrate support portion, the first to third support portions are made independent, including at least a support portion of the above and a third support portion that supports a portion different from the second support portion. It is characterized by raising it.

The method for manufacturing an electronic device according to an embodiment of the present invention is characterized in that the electronic device is manufactured by using the film forming method.

According to the present invention, it is possible to more effectively suppress the generation of wrinkles at the time of adsorption to the electrostatic chuck. The effects described here are not necessarily limited, and may be any of the effects described in the present disclosure.

FIG. 1 is a schematic view of a part of an electronic device manufacturing apparatus. FIG. 2 is a schematic view of a film forming apparatus according to an embodiment of the present invention. FIG. 3 is a plan view of the substrate support unit according to the embodiment of the present invention as viewed from above in the vertical direction (Z direction). FIG. 4 shows the elevation and static electricity of the substrate support when viewed from the vertical cross section in the diagonal direction connecting the first corner portion of the substrate and the second corner portion at the diagonal position in FIG. It is a figure which showed the adsorption progress process to a chuck. FIG. 5a is a diagram illustrating a configuration of a suction portion of an electrostatic chuck according to an embodiment of the present invention. FIG. 5b is a diagram illustrating a configuration of a suction portion of an electrostatic chuck according to an embodiment of the present invention. FIG. 6 is a process diagram showing a detailed process of the substrate adsorption sequence to the electrostatic chuck. FIG. 7 is a schematic view showing an electronic device.

Hereinafter, preferred embodiments and examples of the present invention will be described with reference to the drawings. However, the following embodiments and examples merely illustrate preferred configurations of the present invention, and the scope of the present invention is not limited to those configurations. Further, unless otherwise specified, the hardware configuration and software configuration, processing flow, manufacturing conditions, dimensions, materials, shapes, etc. of the apparatus in the following description are limited to those of the present invention. It is not the purpose.

The present invention can be applied to an apparatus for depositing various materials on the surface of a substrate to form a film, and can be preferably applied to an apparatus for forming a thin film (material layer) having a desired pattern by vacuum deposition. As the material of the substrate, any material such as glass, a film of a polymer material, and a metal can be selected, and the substrate may be, for example, a substrate in which a film such as polyimide is laminated on a glass substrate. .. Further, as the vapor deposition material, any material such as an organic material and a metallic material (metal, metal oxide, etc.) may be selected. In addition to the vacuum deposition apparatus described in the following description, the present invention can be applied to a film forming apparatus including a sputtering apparatus and a CVD (Chemical Vapor Deposition) apparatus. Specifically, the technique of the present invention can be applied to a manufacturing apparatus such as an organic electronic device (for example, an organic light emitting element, a thin film solar cell), an optical member, or the like. Among them, an apparatus for manufacturing an organic light emitting device that forms an organic light emitting device by evaporating a vaporized material and depositing it on a substrate via a mask is one of the preferred application examples of the present invention.

<Manufacturing equipment for electronic devices>
FIG. 1 is a plan view schematically showing a configuration of a part of an electronic device manufacturing apparatus.

The manufacturing apparatus of FIG. 1 is used, for example, for manufacturing a display panel of an organic EL display device for a smartphone. In the case of a display panel for smartphones, for example, on a 4.5th generation substrate (about 700 mm x about 900 mm), a 6th generation full size (about 1500 mm x about 1850 mm) or a half cut size (about 1500 mm x about 925 mm) substrate. After forming a film for forming an organic EL element, the substrate is cut out to produce a plurality of small-sized panels.

The electronic device manufacturing device generally includes a plurality of cluster devices 1 and a relay device that connects the cluster devices.

The cluster device 1 includes a plurality of film forming devices 11 for performing processing (for example, film forming) on the substrate S, a plurality of mask stock devices 12 for accommodating masks M before and after use, and a transport chamber 13 arranged in the center thereof. And. As shown in FIG. 1, the transport chamber 13 is connected to each of the plurality of film forming apparatus 11 and the mask stock apparatus 12.

In the transport chamber 13, a transport robot 14 that transports the substrate and the mask is arranged. The transfer robot 14 transfers the substrate S from the path chamber 15 of the relay device arranged on the upstream side to the film forming device 11. Further, the transfer robot 14 transfers the mask M between the film forming apparatus 11 and the mask stock apparatus 12. The transfer robot 14 is, for example, a robot having a structure in which a robot hand holding a substrate S or a mask M is attached to an articulated arm.

In the film forming apparatus 11 (also referred to as a vapor deposition apparatus), the vapor deposition material stored in the evaporation source is heated by a heater to evaporate, and is deposited on the substrate via a mask. A series of film forming processes such as transfer of the substrate S to and from the transfer robot 14, adjustment (alignment) of the relative position between the substrate S and the mask M, fixing of the substrate S on the mask M, and film formation (deposited film deposition) are performed. This is done by device 11.

In the mask stock device 12, a new mask used in the film forming process in the film forming apparatus 11 and a used mask are separately stored in two cassettes. The transfer robot 14 transfers the used mask from the film forming apparatus 11 to the cassette of the mask stock device 12, and conveys a new mask stored in another cassette of the mask stock device 12 to the film forming apparatus 11.

The cluster device 1 includes a pass chamber 15 that transmits the board S from the upstream side to the cluster device 1 in the flow direction of the board S, and another board S on the downstream side that has been film-formed by the cluster device 1. A buffer chamber 16 for transmitting to the cluster device is connected. The transfer robot 14 in the transfer chamber 13 receives the substrate S from the path chamber 15 on the upstream side and transfers it to one of the film forming devices 11 (for example, the film forming device 11a) in the cluster device 1. Further, the transfer robot 14 receives the substrate S for which the film forming process in the cluster device 1 has been completed from one of the plurality of film forming devices 11 (for example, the film forming device 11b), and the buffer connected to the downstream side. Transport to chamber 16.

A swivel chamber 17 for changing the orientation of the substrate is installed between the buffer chamber 16 and the pass chamber 15. The swivel chamber 17 is provided with a transfer robot 18 for receiving the substrate S from the buffer chamber 16, rotating the substrate S by 180 °, and transporting the substrate S to the pass chamber 15. As a result, the orientation of the substrate S is the same between the cluster device on the upstream side and the cluster device on the downstream side, and the substrate processing becomes easy.

The pass chamber 15, the buffer chamber 16, and the swivel chamber 17 are so-called relay devices that connect the cluster devices, and the relay devices installed on the upstream side and / or the downstream side of the cluster device are the pass room, the buffer room, and the like. Includes at least one of the swivel chambers.

The film forming apparatus 11, the mask stock apparatus 12, the transport chamber 13, the buffer chamber 16, the swirl chamber 17, and the like are maintained in a high vacuum state in the process of manufacturing the organic light emitting element. The pass chamber 15 is usually maintained in a low vacuum state, but may be maintained in a high vacuum state if necessary.

In this embodiment, the configuration of the electronic device manufacturing apparatus has been described with reference to FIG. 1, but the present invention is not limited to this, and other types of apparatus and chambers may be provided, and these devices may be provided. And the arrangement between the chambers may change.

Hereinafter, a specific configuration of the film forming apparatus 11 will be described.

<Film formation equipment>
FIG. 2 is a schematic view showing the configuration of the film forming apparatus 11. In the following description, an XYZ Cartesian coordinate system with the vertical direction as the Z direction is used. When the substrate S is fixed so as to be parallel to the horizontal plane (XY plane) at the time of film formation, the lateral direction (direction parallel to the short side) of the substrate S is set to the X direction, and the longitudinal direction (direction parallel to the long side) is set. Let it be in the Y direction. The angle of rotation around the Z axis is represented by θ.

The film forming apparatus 11 includes a vacuum container 21 maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen gas, a substrate support unit 22 provided inside the vacuum container 21, a mask support unit 23, and an electrostatic chuck. 24 and an evaporation source 25 are included.

The board support unit 22 is a means for receiving and holding the board S carried by the transfer robot 14 provided in the transfer chamber 13, and is also called a board holder. The substrate support unit 22 includes a support portion that supports a peripheral edge portion of the lower surface of the substrate. The detailed configuration of the support portion of the substrate support unit 22 will be described later.

A mask support unit 23 is provided below the board support unit 22. The mask support unit 23 is a means for receiving and holding the mask M transported by the transfer robot 14 provided in the transfer chamber 13, and is also called a mask holder.

The mask M has an opening pattern corresponding to the thin film pattern formed on the substrate S, and is placed on the mask support unit 23. In particular, the mask used for manufacturing an organic EL element for a smartphone is a metal mask on which a fine opening pattern is formed, and is also called an FMM (Fine Metal Mask).

An electrostatic chuck 24 for attracting and fixing the substrate by electrostatic attraction is provided above the substrate support unit 22. The electrostatic chuck 24 has a structure in which an electric circuit such as a metal electrode is embedded in a dielectric (for example, ceramic material) matrix. The electrostatic chuck 24 may be a Coulomb force type electrostatic chuck, a Johnson-Labeck force type electrostatic chuck, or a gradient force type electrostatic chuck. The electrostatic chuck 24 is preferably a gradient force type electrostatic chuck. Since the electrostatic chuck 24 is a gradient force type electrostatic chuck, even when the substrate S is an insulating substrate, it can be satisfactorily adsorbed by the electrostatic chuck 24. When the electrostatic chuck 24 is a Coulomb force type electrostatic chuck, when positive (+) and negative (-) potentials are applied to the metal electrode, it is applied to an object to be adsorbed such as the substrate S through the dielectric matrix. A polarization charge having the opposite polarity to that of the metal electrode is induced, and the substrate S is attracted and fixed to the electrostatic chuck 24 by an electrostatic attraction between them.

The electrostatic chuck 24 may be formed of one plate or may be formed so as to have a plurality of sub-plates. Further, even when formed by one plate, a plurality of electric circuits may be included therein and controlled so that the electrostatic attraction force differs depending on the position in one plate. That is, the electrostatic chuck can be divided into a plurality of suction unit modules according to the structure of the embedded electric circuit. The configuration of the suction portion of the electrostatic chuck 24 and the details of the control method for applying the suction voltage will be described later together with the operation control of the support portion of the substrate support unit 22.

Although not shown, a magnetic force applying means for applying a magnetic force to the mask M at the time of film formation and attracting the mask M to the substrate S side and bringing the mask M into close contact with the substrate S can be installed on the upper portion of the electrostatic chuck 24. .. The magnet as the magnetic force applying means can consist of a permanent magnet or an electromagnet and can be partitioned into a plurality of modules.

Further, although not shown in FIG. 2, by providing a cooling mechanism (for example, a cooling plate) for suppressing the temperature rise of the substrate S on the side opposite to the suction surface of the electrostatic chuck 24, the particles are deposited on the substrate S. The deterioration and deterioration of the organic material may be suppressed. The cooling plate can also be formed integrally with the magnet.

The evaporation source 25 includes a crucible (not shown) for storing the vaporized material deposited on the substrate, a heater for heating the crucible (not shown), and the vaporized material on the substrate until the evaporation rate from the evaporation source becomes constant. Includes shutters (not shown) that prevent scattering. The evaporation source 25 can have various configurations depending on the application, such as a point evaporation source and a linear evaporation source.

Although not shown in FIG. 2, the film forming apparatus 11 includes a film thickness monitor (not shown) and a film thickness calculation unit (not shown) for measuring the thickness of the film deposited on the substrate.

A substrate Z actuator 26, a mask Z actuator 27, an electrostatic chuck Z actuator 28, a position adjusting mechanism 29, and the like are provided on the upper outer side (atmosphere side) of the vacuum vessel 21. These actuators and the position adjusting mechanism are composed of, for example, a motor and a ball screw, or a motor and a linear guide. The board Z actuator 26 is a driving means for raising and lowering (moving in the Z direction) the board support unit 22. The details of the elevating control of the substrate support unit 22 by driving the substrate Z actuator 26 will be described later. The mask Z actuator 27 is a driving means for raising and lowering (moving in the Z direction) the mask support unit 23. The electrostatic chuck Z actuator 28 is a driving means for raising and lowering (moving in the Z direction) the electrostatic chuck 24.

The position adjusting mechanism 29 is a driving means for adjusting (aligning) the positional deviation between the electrostatic chuck 24 and the substrate S and / or between the substrate S and the mask M. That is, the position adjusting mechanism 29 relatives the electrostatic chuck 24 to the substrate support unit 22 and the mask support unit 23 in at least one of the X, Y, and θ directions in a plane parallel to the horizontal plane. It is a horizontal drive mechanism for moving / rotating. In this embodiment, the movement of the substrate support unit 22 and the mask support unit 23 in the horizontal plane is fixed, and the position adjustment mechanism is configured to move the electrostatic chuck 24 in the X, Y, and θ directions. However, the present invention is not limited to this, and even if the position adjustment mechanism is configured so that the movement of the electrostatic chuck 24 in the horizontal direction is fixed and the substrate support unit 22 and the mask support unit 23 are moved in the XYθ direction. Good.

On the outer upper surface of the vacuum container 21, in addition to the drive mechanism described above, for alignment for photographing the alignment marks formed on the substrate S and the mask M through the transparent window provided on the upper surface of the vacuum container 21. Cameras 20a and 20b are installed. By recognizing the alignment mark on the substrate S and the alignment mark on the mask M from the images taken by the alignment cameras 20a and 20b, it is possible to measure the respective XY positions and relative deviations in the XY plane.

The alignment between the substrate S and the mask M is a first alignment (also referred to as "rough alignment"), which is a first position adjustment step for roughly aligning, and a first alignment for high accuracy. It is possible to carry out a two-step alignment of a second alignment (also referred to as "fine alignment"), which is a two-position adjustment step. In this case, it is preferable to use two types of cameras, a low-resolution but wide-field first alignment camera 20a and a narrow-field but high-resolution second alignment camera 20b. For each of the substrate S and the mask 120, the alignment marks attached to two points on the pair of opposite sides are measured by two first alignment cameras 20a, and the alignment marks attached to the four corners of the substrate S and the mask 120 are measured. Is measured by four second alignment cameras 20b. The number of alignment marks and measurement cameras thereof is not particularly limited. For example, in the case of fine alignment, the marks attached to the two opposite corners of the substrate S and the mask 120 may be measured by two cameras. good.

The film forming apparatus 11 includes a control unit (not shown). The control unit has functions such as transfer and alignment of the substrate S, control of the evaporation source 25, and control of film formation. The control unit can be configured by, for example, a computer having a processor, memory, storage, I / O, and the like. In this case, the function of the control unit is realized by the processor executing the program stored in the memory or the storage. As the computer, a general-purpose personal computer may be used, or an embedded computer or a PLC (programmable logical controller) may be used. Alternatively, a part or all of the functions of the control unit may be configured by a circuit such as an ASIC or FPGA. Further, a control unit may be installed for each film forming apparatus, or one control unit may be configured to control a plurality of film forming apparatus.

<Board support unit>
The substrate support unit 22 includes a support portion that supports a peripheral edge portion of the lower surface of the substrate. FIG. 3 is a plan view of the substrate support unit 22 viewed from above in the vertical direction (Z direction), and shows how the substrate S is placed and supported on the substrate support unit 22 for convenience of understanding. In addition, the driving mechanisms such as the electrostatic chuck 24 and the substrate Z actuator 26 arranged on the upper part of the substrate S are not shown.

As shown, the support portions constituting the substrate support unit 22 include a plurality of support portions 221 to 224 that can be independently raised and lowered. Specifically, when the entire peripheral edge of the substrate S is divided into four regions including each corner portion of the substrate, four support portions 221 to 224 are installed at positions corresponding to the regions of each of the four corner portions. .. That is, it extends along the first side (long side) and the second side (short side) of the substrate S forming the corner portion at a position corresponding to the first corner portion (C1) of the substrate S, respectively. The first support portion 221 formed in an L shape is installed, and the position corresponding to the second corner portion (C2) of the substrate, which is the diagonal position of the first corner portion (C1), is concerned. A second support portion 222 that is extended along the third side (long side) and the fourth side (short side) of the substrate S forming the corner portion and is formed in an L shape is installed. Similarly, the remaining two corners of the substrate S also have the third side (long side) and the second side of the substrate S forming the corners at positions corresponding to the third corner (C3). A third support portion 223 extending along the (short side) and formed in an L shape is installed, and a fourth corner portion (4 corner portion) of the substrate which is a diagonal position of the third corner portion (C3) is installed. A fourth side that is extended along the first side (long side) and the fourth side (short side) of the substrate S forming the corner portion at a position corresponding to C4) and formed in an L shape. A support portion 224 is installed.

The above-mentioned substrate Z actuator 26, which is a drive mechanism for driving the substrate support unit 22 up and down in the Z-axis direction, is installed corresponding to each of the substrate support portions 221 to 224. That is, four substrate Z actuators are installed at positions corresponding to the corners (C1 to C4) of the substrate S, and are connected to the corresponding substrate support portions 221 to 224, respectively. Then, each of these substrate Z actuators is controlled by the control unit so that the corresponding substrate support portions 221 to 224 can be raised and lowered independently.

In one embodiment of the present invention, when the substrate S supported by the substrate support unit 22 is raised toward the electrostatic chuck 24 in order to attract the substrate S to the electrostatic chuck 24, the substrate support unit 22 is raised. The plurality of substrate support portions 221 to 224 described above are independently moved up and down. Specifically, the substrate support portions 221 to 224 are arranged in order from the support portion installed at the position corresponding to one corner portion of the substrate S to the support portion installed at the position corresponding to the diagonal corner portion. It is raised in sequence to bring it closer to the electrostatic chuck 24. For example, the substrate Z actuator 26 connected to the first support portion 221 is driven so that the first support portion 221 provided at the position corresponding to the first corner portion (C1) is raised first. Next, the substrate Z actuators installed at positions corresponding to the third corner portion (C3) and the fourth corner portion (C4) adjacent to the first corner portion (C1) are driven to drive the third support. The portion 223 and the fourth support portion 224 are raised, and finally, the second support provided at a position corresponding to the second corner portion (C2) which is the diagonal position of the first corner portion (C1). The portion 222 is driven and controlled to raise the substrate Z actuator connected to the support portion.

By controlling the drive of the substrate support portion independently in this way, when the substrate S is attracted to the electrostatic chuck 24, the adsorption proceeds sequentially from one corner portion on the diagonal line toward the other corner portions facing each other. I can let you.

That is, when the electrostatic chuck 24 independently and sequentially raises the plurality of substrate support portions 221 to 224 constituting the substrate support unit 22 as described above in a state where the adsorption voltage is applied and turned on, the electrostatic chuck 24 first rises. The peripheral edge portion corresponding to the first corner portion (C1) of the substrate S supported by the raised first support portion 221 comes into contact with the lower surface of the electrostatic chuck 24, and suction is performed (FIG. 4A). .. Then, by raising the third and fourth support portions 223 and 224, adsorption proceeds from the first corner portion (C1) toward the central portion of the substrate S in the direction of the arrow in FIG. Adsorption is performed up to the peripheral edges corresponding to the third and fourth corners (C3, C4) supported by the fourth support portions 223 and 224, respectively (FIG. 4 (b)), and finally, the diagonal positions. The second support portion 222 of the above is raised, and the peripheral portion of the substrate at the position corresponding to the second corner portion (C2) is brought into contact with the electrostatic chuck 24 and is adsorbed, whereby the adsorption is completed (FIG. 4 (c)). )). 4 (a) to 4 (c) are taken from a vertical cross section in the diagonal direction connecting the first corner portion (C1) and the second corner portion (C2) of the substrate in FIG. It is a figure which shows the ascending process of the substrate support part and the process of adhering to an electrostatic chuck 24 described above.

As described above, in one embodiment of the present invention, the substrate support unit 22 that supports the outer periphery of the substrate S is divided into a plurality of regions corresponding to each corner portion of the substrate S and installed, and the substrate S corresponds to each corner portion. It is characterized in that a plurality of substrate support portions 221 to 224 provided at the positions to be driven are independently and sequentially driven and controlled. As a result, the adsorption to the electrostatic chuck 24 is sequentially performed from the first corner portion of the substrate to the second corner portion facing the substrate through the central portion of the substrate, and the deflection of the central portion of the substrate is the last. The entire substrate can be flatly attracted to the electrostatic chuck 24 while being escaped to the second corner portion side. Therefore, it is possible to more effectively suppress the generation of wrinkles at the time of adsorption to the electrostatic chuck.

In the above-described embodiment, it has been described that the substrate support portion starts to rise in a state where the adsorption voltage is applied to the electrostatic chuck 24, but the present invention is not limited to this. For example, with the electrostatic chuck 24 turned off, the ascending operation of the substrate support portion described above is started, and when the contact with the electrostatic chuck 24 starts (for example, it is supported by the first support portion 221). At the time when the first corner portion of the substrate comes into contact with the electrostatic chuck), adsorption can be performed by applying an adsorption voltage to the electrostatic chuck 24. Alternatively, the substrate support portion can be started to rise, and an adsorption voltage can be applied to the electrostatic chuck 24 to turn it on while the electrostatic chuck 24 is not in contact with the electrostatic chuck 24. Even in such a case, the above-mentioned effect of the present invention can be obtained.

In the present embodiment, the substrate support portions are provided at positions corresponding to the respective corner portions (four corner portions) of the substrate, but at least one of the three or more substrate support portions is a substrate. If the configuration is such that the board support portion is provided at a position corresponding to one corner portion and the other substrate support portion is provided at the corner portion or an arbitrary position and each board support portion is independently controlled to move up and down, adsorption is performed from one corner portion. It can be progressed satisfactorily in sequence.

<Structure of the suction part of the electrostatic chuck 24, and the interlocking of the application of the suction voltage to the electrostatic chuck 24 and the drive control of the substrate support part>
In the above, it has been described that the adsorption voltage for adsorbing the substrate S is simultaneously applied to the entire surface of the electrostatic chuck 24, but the present invention is not limited to this.

That is, by interlocking the application of the substrate adsorption voltage to the electrostatic chuck 24 with the drive control of the substrate support portion described above, it is possible to more effectively suppress the generation of wrinkles during adsorption. This will be described in detail below.

The configuration of the suction portion of the electrostatic chuck according to the embodiment of the present invention will be described with reference to FIGS. 5a to 5b.

FIG. 5a is a conceptual block diagram of the electrostatic chuck system 30 of the present embodiment, and FIG. 5b is a schematic plan view of the electrostatic chuck 24.

As shown in FIG. 5a, the electrostatic chuck system 30 of the present embodiment includes an electrostatic chuck 24, a voltage application unit 31, and a voltage control unit 32.

The voltage application unit 31 applies a voltage for generating an electrostatic attraction to the electrode unit of the electrostatic chuck 24.

The voltage control unit 32 determines the magnitude of the voltage applied to the electrode unit by the voltage application unit 31 according to the progress of the adsorption step of the electrostatic chuck system 30 or the film formation process of the film forming apparatus 11, and the time when the voltage application starts. Controls voltage maintenance time, voltage application order, etc. For example, the voltage control unit 32 can independently control the voltage application to the plurality of sub-electrode units 241 to 244 included in the electrode portion of the electrostatic chuck 24 for each sub-electrode unit. In the present embodiment, the voltage control unit 32 is embodied separately from the control unit of the film forming apparatus 11, but the present invention is not limited to this, and may be integrated into the control unit of the film forming apparatus 11.

The electrostatic chuck 24 includes an electrode portion that generates an electrostatic adsorption force for adsorbing an object to be adsorbed (for example, substrate S) on the adsorption surface, and the electrode portion may include a plurality of sub-electrode portions 241 to 244. it can. For example, the electrostatic chuck 24 of the present embodiment has, as shown in FIG. 5b, along the longitudinal direction (Y direction) of the electrostatic chuck 24 and / or the lateral direction (X direction) of the electrostatic chuck 24. , A plurality of divided sub-electrode portions 241 to 244 are included.

Each sub-electrode portion includes an electrode pair 33 to which positive (first polar) and negative (second polar) potentials are applied to generate electrostatic attraction. For example, each electrode pair 33 includes a first electrode 331 to which a positive potential is applied and a second electrode 332 to which a negative potential is applied.

The first electrode 331 and the second electrode 332 each have a comb shape as shown in FIG. 5b. For example, the first electrode 331 and the second electrode 332 each include a plurality of comb teeth and a base connected to the plurality of comb teeth. The bases of the electrodes 331 and 332 supply an electric potential to the comb teeth, and the plurality of comb teeth generate an electrostatic adsorption force with the object to be adsorbed. In one sub-electrode portion, each comb tooth portion of the first electrode 331 is alternately arranged so as to face each comb tooth portion of the second electrode 332. By forming the comb teeth of the electrodes 331 and 332 facing each other and intricately intertwined with each other in this way, the distance between the electrodes to which different potentials are applied can be narrowed, and a large unequal electric field is formed. Then, the substrate S can be adsorbed by the gradient force.

In the present embodiment, it has been described that the electrodes 331 and 332 of the sub-electrode portions 241 to 244 of the electrostatic chuck 24 have a comb shape, but the present invention is not limited to this, and electrostatic electricity is generated with the object to be adsorbed. It can have a variety of shapes as long as it can generate an attractive force.

The electrostatic chuck 24 of the present embodiment has a plurality of suction portions corresponding to a plurality of sub-electrode portions. For example, as shown in FIG. 5b, the electrostatic chuck 24 of the present embodiment has four suction portions corresponding to the four sub-electrode portions 241 to 244, but the suction of the substrate S is not limited to this. In order to control more precisely, it may have another number of suction portions.

The plurality of suction portions may be embodied by physically one plate having a plurality of electrode portions, or by having each of the plurality of physically divided plates having one or more electrode portions. It may be embodied. In the embodiment shown in FIG. 5b, each of the plurality of suction portions may be embodied so as to correspond to each of the plurality of sub-electrode portions, or one adsorption portion may be embodied so as to include the plurality of sub-electrode portions. Good.

For example, by controlling the application of voltage to the sub-electrode units 241 to 244 by the voltage control unit 32, as will be described later, a plurality of sub-electrode units 241 arranged in a direction intersecting the adsorption traveling direction of the substrate S, 244 can be made to form one suction part. That is, although the voltage of each of the two sub-electrode portions 241 and 244 can be controlled independently, these two electrodes can be controlled so that the voltage is applied to these two electrode portions 241 and 244 at the same time. The portions 241 and 244 can be made to function as one suction portion. As long as the substrate can be independently adsorbed to each of the plurality of adsorption portions, its specific physical structure and electric circuit structure can be changed.

In FIG. 6, in the electrostatic chuck 24 having the above configuration, the substrate S is moved diagonally from one corner portion by interlocking the application of the adsorption voltage to each adsorption portion and the drive of the substrate support portion described above. The detailed process of sequentially adsorbing toward the corner on the other side is illustrated.

As described above, with the substrate S carried into the vacuum vessel 21 of the film forming apparatus 11 and placed on the support portion of the substrate support unit 22, one corner portion of the substrate S (for example, the first corner). The first support portion 221 provided at the position corresponding to the portion (C1)) rises first. When the substrate peripheral edge corresponding to the first corner portion (C1) is sufficiently close to or comes into contact with the lower surface of the electrostatic chuck 24 due to the rise of the first support portion 221, the voltage control unit 32 moves to the first corner of the substrate. The substrate adsorption voltage (ΔV1) is controlled to be applied to the sub-electrode portion 243 arranged at the position corresponding to the portion (C1) (FIG. 6A). As a result, adsorption starts from the first corner portion (C1) of the substrate S.

Subsequently, due to the rise of the third and fourth support portions 223 and 224, the peripheral portion of the substrate corresponding to the third and fourth corner portions (C3, C4) is sufficiently close or in contact with the lower surface of the electrostatic chuck 24. Then, the voltage control unit 32 controls so that the substrate adsorption voltage (ΔV1) is applied to the sub-electrode units 241 and 244 arranged at the positions corresponding to the third and fourth corner portions (C3, C4). (Fig. 6 (b)). As a result, the adsorption starting from the first corner portion (C1) of the substrate S is attracted to the region corresponding to approximately half of the substrate S including the central portion of the substrate S in the direction toward the other corner portions on the diagonal line. Will be done.

Finally, the second support portion 222, which is the diagonal substrate support portion, rises, and the substrate peripheral portion corresponding to the second corner portion (C2), which is the diagonal corner portion, is the electrostatic chuck 24. When sufficiently close to or in contact with the lower surface, the voltage control unit 32 controls so that the substrate adsorption voltage (ΔV1) is applied to the sub-electrode unit 242 arranged at a position corresponding to the second corner portion (C2). (Fig. 6 (c)). As a result, the entire region of the substrate S is adsorbed.

Each right side drawing of FIG. 6 is a top view (top view seen from the electrostatic chuck 24 side) conceptually showing the suction state of the substrate S at each of the above voltage application stages. The substrate adsorption area at each stage is indicated by diagonal lines. Each left side drawing of FIG. 6 is a vertical cross section in the diagonal direction connecting the first corner portion (C1) and the second corner portion (C2) of the substrate at each of the voltage application stages. It shows the rising process of the substrate support and the progress of adsorption.

As described above, in one embodiment of the present invention, a plurality of substrate support portions 221 to 224 provided at positions corresponding to the corner portions of the substrate S are independently and sequentially driven and controlled, and are applied to the electrostatic chuck 24. The suction voltage to be applied is also sequentially applied to a plurality of suction regions from one corner portion to the other side corner portion in the diagonal direction in accordance with the drive control timing of the substrate support portion. Control to be done.

As a result, it is possible to more effectively suppress the generation of wrinkles when the substrate is adsorbed on the electrostatic chuck 24.

As described above, in the present invention, the substrate support portion is divided into a plurality of parts corresponding to each corner portion of the substrate S and installed, and the drive thereof is independently controlled so that the substrate is attracted from the corner portion on one side. By making the process diagonally toward the other corner, the deflection of the substrate is satisfactorily escaped during adsorption and the occurrence of wrinkles is suppressed. The present invention is not limited to the configuration of the above embodiment, and may be appropriately modified within the scope of the technical idea. For example, in the above embodiment, the drive of the substrate support (and / or the application of the adsorption voltage to the electrostatic chuck linked thereto) is performed by "raising the first support 221 corresponding to the first corner (C1)". → "Simultaneous rise of the third and fourth support portions 223 and 224 corresponding to the third and fourth corner portions (C3, C4)" → "Second corresponding to the second corner portion (C2)" An example of controlling in the order of "rising of the support portion 222" has been described, but as long as the adsorption traveling direction of the substrate is from the corner portion on one side to the corner portion on the other side in the diagonal direction as a whole, the third and third The fourth support portion 223 and 224 are also independently controlled to "rise the first support portion 221" → "rise the third support portion 223" → "rise the fourth support portion 224" → "the fourth support portion 224". Control in the order of "rise of the support portion 222 of 2", or "rise of the first support portion 221" → "rise of the third support portion 223" → "rise of the fourth support portion 224 and the second support portion" It can also be controlled in the order of "simultaneous rise of 222".

<Film formation process>
Hereinafter, a film forming method using the film forming apparatus according to the present embodiment will be described.

The substrate S is carried into the vacuum container 21 with the mask M supported by the mask support unit 23 in the vacuum container 21. The substrate S is attracted to the electrostatic chuck 24 through the sequential drive operation (and the sequential suction voltage application to the electrostatic chuck 24 linked thereto) of the plurality of substrate support portions 221 to 224 constituting the substrate support unit 22 described above. .. Next, after aligning the substrate S and the mask M, when the relative positional deviation amount between the substrate S and the mask M becomes smaller than a predetermined threshold value, the magnetic force applying means is lowered to bring the substrate S and the mask M into close contact with each other. The film-forming material is deposited on the substrate S. After forming a film to a desired thickness, the magnetic force applying means is raised to separate the mask M, and the substrate S is carried out.

<Manufacturing method of electronic devices>
Next, an example of a method for manufacturing an electronic device using the film forming apparatus of the present embodiment will be described. Hereinafter, the configuration and manufacturing method of the organic EL display device will be illustrated as an example of the electronic device.

First, the organic EL display device to be manufactured will be described. FIG. 7A shows an overall view of the organic EL display device 60, and FIG. 7B shows a cross-sectional structure of one pixel.

As shown in FIG. 7A, a plurality of pixels 62 including a plurality of light emitting elements are arranged in a matrix in the display area 61 of the organic EL display device 60. Although the details will be described later, each of the light emitting elements has a structure including an organic layer sandwiched between a pair of electrodes. The pixel referred to here refers to the smallest unit that enables the display of a desired color in the display area 61. In the case of the organic EL display device according to this embodiment, the pixel 62 is composed of a combination of a first light emitting element 62R, a second light emitting element 62G, and a third light emitting element 62B that emit light differently from each other. The pixel 62 is often composed of a combination of a red light emitting element, a green light emitting element, and a blue light emitting element, but may be a combination of a yellow light emitting element, a cyan light emitting element, and a white light emitting element, and is particularly limited to at least one color. There are no restrictions.

FIG. 7B is a schematic partial cross-sectional view taken along the line AB of FIG. 7A. The pixel 62 has an organic EL element having an anode 64, a hole transport layer 65, any of the light emitting layers 66R, 66G, 66B, an electron transport layer 67, and a cathode 68 on the substrate 63. There is. Of these, the hole transport layer 65, the light emitting layers 66R, 66G, 66B, and the electron transport layer 67 correspond to the organic layer. Further, in the present embodiment, the light emitting layer 66R is an organic EL layer that emits red, the light emitting layer 66G is an organic EL layer that emits green, and the light emitting layer 66B is an organic EL layer that emits blue. The light emitting layers 66R, 66G, and 66B are formed in a pattern corresponding to a light emitting element (sometimes referred to as an organic EL element) that emits red, green, and blue, respectively. Further, the anode 64 is formed separately for each light emitting element. The hole transport layer 65, the electron transport layer 67, and the cathode 68 may be formed in common with the plurality of light emitting elements 62R, 62G, and 62B, or may be formed for each light emitting element. An insulating layer 69 is provided between the anode 64 in order to prevent the anode 64 and the cathode 68 from being short-circuited by foreign matter. Further, since the organic EL layer is deteriorated by moisture and oxygen, a protective layer 70 for protecting the organic EL element from moisture and oxygen is provided.

In FIG. 7B, the hole transport layer 65 and the electron transport layer 67 are shown as one layer, but they are formed of a plurality of layers including the hole block layer and the electron block layer due to the structure of the organic EL display element. May be done. Further, between the anode 64 and the hole transport layer 65, a hole injection layer having an energy band structure capable of smoothly injecting holes from the anode 64 into the hole transport layer 65 is provided. It can also be formed. Similarly, an electron injection layer can be formed between the cathode 68 and the electron transport layer 67.

Next, an example of a method for manufacturing an organic EL display device will be specifically described.

First, a circuit board (not shown) for driving the organic EL display device and a substrate 63 on which the anode 64 is formed are prepared.

An acrylic resin is formed by spin coating on the substrate 63 on which the anode 64 is formed, and the acrylic resin is patterned by a lithography method so that an opening is formed in the portion where the anode 64 is formed to form an insulating layer 69. .. This opening corresponds to a light emitting region where the light emitting element actually emits light.

The substrate 63 in which the insulating layer 69 is patterned is carried into the first organic material film forming apparatus, the substrate is held by the substrate holding unit and the electrostatic chuck, and the hole transport layer 65 is placed on the anode 64 in the display region. A film is formed as a layer common to the above. The hole transport layer 65 is formed by vacuum deposition. In reality, the hole transport layer 65 is formed to have a size larger than that of the display region 61, so that a high-definition mask is unnecessary.

Next, the substrate 63 on which the hole transport layer 65 is formed is carried into the second organic material film forming apparatus and held by the substrate holding unit and the electrostatic chuck. The substrate and the mask are aligned, the substrate is placed on the mask, and the light emitting layer 66R that emits red is formed on the portion of the substrate 63 on which the element that emits red is arranged.

Similar to the film formation of the light emitting layer 66R, the light emitting layer 66G that emits green is formed by the third organic material film forming apparatus, and the light emitting layer 66B that emits blue is further formed by the fourth organic material film forming apparatus. .. After the film formation of the light emitting layers 66R, 66G, and 66B is completed, the electron transport layer 67 is formed on the entire display region 61 by the fifth film forming apparatus. The electron transport layer 67 is formed as a layer common to the three color light emitting layers 66R, 66G, and 66B.

The substrate formed up to the electron transport layer 67 is moved by a metallic thin-film deposition material film forming apparatus to form a cathode 68 film.

After that, it moves to a plasma CVD device to form a protective layer 70, and the organic EL display device 60 is completed.

From the time when the substrate 63 in which the insulating layer 69 is patterned is carried into the film forming apparatus until the film formation of the protective layer 70 is completed, when the substrate 63 is exposed to an atmosphere containing moisture or oxygen, a light emitting layer made of an organic EL material is formed. It may be deteriorated by moisture and oxygen. Therefore, in this example, the loading and unloading of the substrate between the film forming apparatus is performed in a vacuum atmosphere or an inert gas atmosphere.

The above embodiment shows an example of the present invention, and the present invention is not limited to the configuration of the above embodiment, and may be appropriately modified within the scope of the technical idea.

11: Film forming apparatus, 22: Substrate support unit, 221 222, 223, 224: Support part, 23: Mask support unit, 24: Electrostatic chuck, 241, 242, 243, 244: Sub-electrode part

Claims (15)

A film forming apparatus that deposits a film forming material on a substrate via a mask.
A substrate support portion that is arranged in the chamber and supports the peripheral portion of the substrate, and a substrate support portion.
A substrate adsorption means for adsorbing the substrate, which is arranged above the substrate support portion in the chamber and is supported by the substrate support portion,
Including a control unit that controls the elevating and lowering of the substrate support unit toward the substrate adsorption means.
The substrate support portion
A first support portion that supports the vicinity of the first corner of each of the two adjacent sides via the first corner of the substrate, and a first support portion.
A second support portion that supports the vicinity of the second corner of each of the two adjacent sides via a second corner that is diagonal to the first corner of the substrate.
At least including the first support portion and a third support portion that supports a portion different from the second support portion.
The control unit is a film forming apparatus characterized in that the first to third support units are independently controlled to move up and down. The control unit raises the first support portion so that suction is performed from the first corner of the substrate, and raises the second support portion after the first support portion is raised. The film forming apparatus according to claim 1. The third support portion supports the vicinity of the third corner of two adjacent sides via the first corner of the substrate and a third corner different from the second corner.
The substrate support includes a fourth support that supports the vicinity of the fourth corner of each of the two adjacent sides via a fourth corner that is diagonal to the third corner of the substrate.
The control unit is in the order from the first support portion to the second support portion so that the substrate is adsorbed in the direction from the first corner to the second corner of the substrate. The film forming apparatus according to claim 1, wherein the first to fourth support portions are raised so as to be brought close to the substrate adsorption means. The claim is characterized in that the control unit is controlled to raise the first support portion, then raise both the third and fourth support portions, and then raise the second support portion. Item 3. The film forming apparatus according to item 3. The control unit is characterized in that the first support portion is raised, then the third and fourth support portions are sequentially raised, and then the second support portion is raised. The film forming apparatus according to claim 3. The film forming apparatus according to claim 3, wherein the substrate adsorption means is an electrostatic chuck. The electrostatic chuck is configured to have a plurality of divided suction portions.
The adsorption voltage for adsorbing the substrate is applied to the plurality of adsorption portions from the first corner at the timing when the first to fourth support portions are raised and are close to the substrate adsorption means. The film forming apparatus according to claim 6, wherein the film is sequentially applied in a direction toward the second corner. This is a film forming method for forming a film forming material on the film forming surface of a substrate via a mask in the chamber of the film forming apparatus.
A step of supporting the peripheral edge of the substrate carried into the chamber with a substrate support portion, and
A step of adsorbing a surface of the substrate opposite to the film-forming surface of the substrate to a substrate adsorption means arranged above the substrate support portion in the chamber.
Including a step of forming a film-forming material discharged from a film-forming source onto the film-forming surface of the substrate via the mask.
The suction step includes a step of raising the substrate support portion toward the substrate suction means and bringing the substrate supported by the substrate support portion close to the substrate suction means.
The substrate support portion
A first support portion that supports the vicinity of the first corner of each of the two adjacent sides via the first corner of the substrate, and a first support portion.
A second support portion that supports the vicinity of the second corner of each of the two adjacent sides via a second corner that is diagonal to the first corner of the substrate.
At least including the first support portion and a third support portion that supports a portion different from the second support portion.
A film forming method comprising raising the first to third support portions independently in the step of raising the substrate support portion. In the step of raising the substrate support portion,
It is characterized in that the first support portion is first raised so that suction is performed from the first corner of the substrate, and then the second support portion is raised after the first support portion is raised. The film forming method according to claim 8. The third support portion supports the vicinity of the third corner of two adjacent sides via the first corner of the substrate and a third corner different from the second corner.
The substrate support includes a fourth support that supports the vicinity of the fourth corner of each of the two adjacent sides via a fourth corner that is diagonal to the third corner of the substrate.
In the step of raising the substrate support portion,
The first to first supports in the order from the first support portion to the second support portion so that the substrate is adsorbed in the direction from the first corner to the second corner of the substrate. The film forming method according to claim 8, wherein the support portion of No. 4 is raised so as to be brought close to the substrate adsorption means. In the step of raising the substrate support portion,
The film forming method according to claim 10, wherein the first support portion is raised, then both the third and fourth support portions are raised, and then the second support portion is raised. In the step of raising the substrate support portion,
The film forming method according to claim 10, wherein the first support portion is raised, then the third and fourth support portions are raised in sequence, and then the second support portion is raised. .. The film forming method according to claim 10, wherein the substrate adsorption means is an electrostatic chuck. The electrostatic chuck is configured to have a plurality of divided suction portions.
The adsorption voltage for adsorbing the substrate is applied to the plurality of adsorption portions from the first corner at the timing when the first to fourth support portions are raised and are close to the substrate adsorption means. The film forming method according to claim 13, wherein the film is sequentially applied in the direction toward the second corner. A method for manufacturing an electronic device, which comprises manufacturing an electronic device by using the film forming method according to any one of claims 8 to 14.

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