JP7069280B2 - Film forming equipment, film forming method, and manufacturing method of electronic devices - Google Patents

Description

The present invention relates to a film forming apparatus, a film forming method, and a method for manufacturing an electronic device.

In the manufacture of an organic EL display device (organic EL display), when the organic light emitting element (organic EL element; OLED) constituting the organic EL display device is formed, the vapor deposition material evaporated from the evaporation source of the film forming apparatus is used. An organic layer or a metal layer is formed by vapor-filming the substrate through a mask on which a pixel pattern is formed.

In the upward vapor deposition method (depot-up) film forming apparatus, the evaporation source is provided in the lower part of the vacuum vessel of the film forming apparatus, the substrate is arranged in the upper part of the vacuum vessel, and vapor deposition is carried out on the lower surface of the substrate. In such an upward vapor deposition type film forming apparatus, the substrate supports the peripheral edge of the lower surface by the support portion of the substrate holder so as not to damage the organic substance layer / electrode layer formed on the lower surface which is the film forming surface. In this case, as the size of the substrate increases, the central portion of the substrate that is not supported by the support portion of the substrate holder bends due to the weight of the substrate, which is one of the factors that reduce the vapor deposition accuracy. Even in a film forming apparatus of a method other than the upward thin-film deposition method, bending due to the weight of the substrate may occur.

As a method for reducing the bending due to the weight of the substrate, a technique using an electrostatic chuck is being studied. That is, by installing the electrostatic chuck on the upper part of the substrate and adsorbing the upper surface of the substrate supported by the support portion of the substrate holder to the electrostatic chuck, the central portion of the substrate is pulled by the electrostatic attraction of the electrostatic chuck. Therefore, the deflection of the substrate can be reduced.

However, in the method of adsorbing the substrate from above using the electrostatic chuck in this way, if the entire surface of the substrate is to be adsorbed at the same time, the substrate is not uniformly adsorbed by the electrostatic chuck, and wrinkles occur especially in the central portion. In some cases.

That is, the substrate supported by the substrate support portion is raised toward the electrostatic chuck (or the electrostatic chuck is lowered toward the substrate), and the substrate and the electrostatic chuck are in close proximity to each other or in contact with each other. When an adsorption voltage is applied to the entire surface, the peripheral edge of the substrate supported by the support portion is attracted to the electrostatic chuck before the bent central portion, so that the deflection of the central portion of the substrate is not sufficiently escaped. I will remain.

As a technique for suppressing the generation of wrinkles during adsorption to the electrostatic chuck, it is possible to sequentially raise the substrate support portions that support the peripheral portions on both sides of the substrate so that the substrate comes into contact with the electrostatic chuck. Although it is being considered, there is still the problem that the occurrence of wrinkles cannot be sufficiently suppressed.

For example, as shown in FIG. 7, one of the left and right substrate support portions 220 facing each other is raised first so that one side peripheral portion of the substrate S supported by the support portion is brought into contact with the electrostatic chuck 240. Next, when the other support portion on the opposite side is raised to bring the other peripheral edge portion of the substrate S into contact with the electrostatic chuck 240, the deflection of the central portion of the substrate S cannot be sufficiently eliminated, and wrinkles still remain in the central region. It can be adsorbed. Therefore, in view of the above problems, it is an object of the present invention to more effectively suppress the generation of wrinkles at the time of adsorption to the electrostatic chuck.

The film forming apparatus according to the embodiment of the present invention is a film forming apparatus for forming a film forming material on a substrate via a mask, and is arranged in a chamber to support a peripheral edge of a first side of the substrate. A first substrate support portion to be used, a second substrate support portion arranged in the chamber and supporting a peripheral portion of a second side facing the first side of the substrate, and a second substrate support portion in the chamber. It is arranged above the first and second substrate support portions, and independently controls the substrate suction means for sucking the substrate and the raising and lowering of the first and second substrate support portions toward the substrate suction means. The substrate adsorption means is an electrostatic chuck, and the peripheral portion of the first side of the substrate is adsorbed by applying an adsorption voltage for adsorbing the substrate. It has a suction region of 1 and a second suction region that sucks the peripheral edge of the second side of the substrate by applying a suction voltage for sucking the substrate. The adsorption region and the second adsorption region are independently controlled into an adsorption state and a non-adsorption state, and the control unit sets the first substrate support portion on the substrate when the substrate is adsorbed by the substrate adsorption means. Move to the first position which is the first distance from the suction means, and move the second substrate support portion to the second position which is the second distance away from the substrate suction means than the first distance. The substrate suction means moves, and the first suction is performed in a state where the first substrate support portion is moved to the first position and the second substrate support portion is moved to the second position. By applying the adsorption voltage for adsorbing the substrate to the region, the adsorption voltage for adsorbing the substrate is applied to the first adsorption region in the adsorption state and to the second adsorption region. After controlling the second adsorption region to the non-adsorption state, the second adsorption region is subjected to the non-adsorption by applying an adsorption voltage for adsorbing the substrate to the second adsorption region. The substrate is controlled from the state to the adsorption state, and the substrate is separated from the second substrate support portion at the second position by adsorbing the substrate.

The film forming method according to the embodiment of the present invention is a film forming method for forming a film forming material on a film forming surface of a substrate via a mask in a chamber of a film forming apparatus, and is carried into the chamber. A step of supporting the peripheral edge portion of the first side of the substrate by the first substrate support portion and supporting the peripheral edge portion of the second side facing the first side by the second substrate support portion, and the above. A suction step of adsorbing a surface opposite to the film-forming surface of the substrate to a substrate adsorption means arranged above the first and second substrate support portions in the chamber, and an adsorption step of adsorbing the film-forming material via the mask. The substrate adsorption means is an electrostatic chuck, which comprises a step of forming a film on the film-forming surface of the substrate, and the first substrate of the substrate is subjected to an adsorption voltage for adsorbing the substrate. A first adsorption region that adsorbs the peripheral edge of the side of the substrate, and a second adsorption region that adsorbs the peripheral edge of the second side of the substrate by applying an adsorption voltage for adsorbing the substrate. The first adsorption region and the second adsorption region are independently controlled into an adsorption state and a non-adsorption state, and in the adsorption step, the first substrate support portion is subjected to the substrate adsorption means. Moves to a first position that is a first distance from, and moves the second substrate support portion to a second position that is a second distance away from the substrate suction means than the first distance. In the step and the substrate suction means, the first suction is performed in a state where the first substrate support portion is moved to the first position and the second substrate support portion is moved to the second position. By applying the adsorption voltage for adsorbing the substrate to the region, the adsorption voltage for adsorbing the substrate is applied to the first adsorption region in the adsorption state and to the second adsorption region. After controlling the second adsorption region to the non-adsorption state, the second adsorption region is subjected to the non-adsorption by applying an adsorption voltage for adsorbing the substrate to the second adsorption region. It is characterized by including a step of controlling the suction state from the state and sucking the substrate to the substrate suction means to separate the substrate from the second substrate support portion at the second position. And.

The method for manufacturing an electronic device according to an embodiment of the present invention is characterized in that the electronic device is manufactured by using the film forming method.

According to the present invention, it is possible to more effectively suppress the generation of wrinkles at the time of adsorption to the electrostatic chuck.

The effects described herein are not necessarily limited, and may be any of the effects described in the present disclosure.

FIG. 1 is a schematic diagram of a part of an electronic device manufacturing apparatus. FIG. 2 is a schematic view of a film forming apparatus according to an embodiment of the present invention. FIG. 3 is a plan view of the substrate support unit according to the embodiment of the present invention as viewed from above in the vertical direction (Z direction). FIG. 4a is a diagram illustrating a configuration of a suction portion of an electrostatic chuck according to an embodiment of the present invention. FIG. 4b is a diagram illustrating the configuration of the suction portion of the electrostatic chuck according to the embodiment of the present invention. FIG. 4c is a diagram illustrating the configuration of the suction portion of the electrostatic chuck according to the embodiment of the present invention. FIG. 5 is a diagram showing a substrate adsorption process on the electrostatic chuck. FIG. 6 is a schematic diagram showing an electronic device. FIG. 7 is a diagram showing a substrate adsorption process on a conventional electrostatic chuck.

Hereinafter, preferred embodiments and examples of the present invention will be described with reference to the drawings. However, the following embodiments and examples merely illustrate preferred configurations of the present invention, and the scope of the present invention is not limited to those configurations. Further, unless otherwise specified, the hardware configuration and software configuration, processing flow, manufacturing conditions, dimensions, materials, shapes, etc. of the apparatus in the following description are limited to those of the present invention. It is not the purpose.

The present invention can be applied to an apparatus for depositing various materials on the surface of a substrate to form a film, and can be preferably applied to an apparatus for forming a thin film (material layer) having a desired pattern by vacuum deposition. As the material of the substrate, any material such as glass, a film of a polymer material, and a metal can be selected, and the substrate may be, for example, a substrate in which a film such as polyimide is laminated on a glass substrate. .. Further, as the vapor deposition material, any material such as an organic material and a metallic material (metal, metal oxide, etc.) may be selected. In addition to the vacuum vapor deposition apparatus described in the following description, the present invention can be applied to a film forming apparatus including a sputtering apparatus and a CVD (Chemical Vapor Deposition) apparatus. Specifically, the technique of the present invention can be applied to manufacturing equipment such as organic electronic devices (for example, organic light emitting devices, thin film solar cells), optical members, and the like. Among them, an apparatus for manufacturing an organic light emitting device that forms an organic light emitting device by evaporating a vapor deposition material and depositing it on a substrate via a mask is one of the preferred application examples of the present invention.
<Manufacturing equipment for electronic devices>
FIG. 1 is a plan view schematically showing a configuration of a part of an electronic device manufacturing apparatus.

The manufacturing apparatus of FIG. 1 is used, for example, for manufacturing a display panel of an organic EL display device for a smartphone. In the case of a display panel for smartphones, for example, on a 4.5 generation substrate (about 700 mm x about 900 mm), a 6 generation full size (about 1500 mm x about 1850 mm) or a half cut size (about 1500 mm x about 925 mm) substrate. After forming a film for forming an organic EL element, the substrate is cut out to produce a plurality of small-sized panels.

The electronic device manufacturing device generally includes a plurality of cluster devices 1 and a relay device that connects the cluster devices.

The cluster device 1 includes a plurality of film forming devices 11 for processing (for example, film forming) the substrate S, a plurality of mask stock devices 12 for accommodating masks M before and after use, and a transport chamber 13 arranged in the center thereof. And. As shown in FIG. 1, the transport chamber 13 is connected to each of the plurality of film forming apparatus 11 and the mask stock apparatus 12.

In the transport chamber 13, a transport robot 14 that transports the substrate and the mask is arranged. The transfer robot 14 transfers the substrate S from the pass chamber 15 of the relay device arranged on the upstream side to the film forming device 11. Further, the transfer robot 14 transfers the mask M between the film forming apparatus 11 and the mask stock apparatus 12. The transfer robot 14 is, for example, a robot having a structure in which a robot hand for holding a substrate S or a mask M is attached to an articulated arm.

In the film forming apparatus 11 (also referred to as a vapor deposition apparatus), the vapor deposition material stored in the evaporation source is heated by a heater and evaporated, and is vapor-deposited on the substrate via a mask. A series of film forming processes such as transfer of the substrate S to and from the transfer robot 14, adjustment (alignment) of the relative position between the substrate S and the mask M, fixing of the substrate S on the mask M, and film formation (deposited film) are performed. This is done by device 11.

In the mask stock device 12, a new mask used in the film forming process in the film forming apparatus 11 and a used mask are separately stored in two cassettes. The transfer robot 14 transfers the used mask from the film forming apparatus 11 to the cassette of the mask stock device 12, and conveys a new mask stored in another cassette of the mask stock device 12 to the film forming apparatus 11.

The cluster device 1 includes a path chamber 15 that transmits the board S from the upstream side to the cluster device 1 in the flow direction of the board S, and another board S on the downstream side that has been film-formed by the cluster device 1. A buffer chamber 16 for transmitting to the cluster device is connected. The transfer robot 14 in the transfer chamber 13 receives the substrate S from the pass chamber 15 on the upstream side and transfers it to one of the film forming devices 11 (for example, the film forming device 11a) in the cluster device 1. Further, the transfer robot 14 receives the substrate S for which the film forming process in the cluster device 1 has been completed from one of the plurality of film forming devices 11 (for example, the film forming device 11b), and the buffer connected to the downstream side. Transport to room 16.

A swivel chamber 17 for changing the direction of the substrate is installed between the buffer chamber 16 and the pass chamber 15. The swivel chamber 17 is provided with a transfer robot 18 for receiving the substrate S from the buffer chamber 16, rotating the substrate S by 180 °, and transporting the substrate S to the pass chamber 15. As a result, the orientation of the substrate S is the same between the cluster device on the upstream side and the cluster device on the downstream side, and the substrate processing becomes easy.

The pass chamber 15, the buffer chamber 16, and the swivel chamber 17 are so-called relay devices that connect the cluster devices, and the relay devices installed on the upstream side and / or the downstream side of the cluster device are the pass room, the buffer room, and the like. Includes at least one of the swivel chambers.

The film forming apparatus 11, the mask stock apparatus 12, the transport chamber 13, the buffer chamber 16, the swivel chamber 17, and the like are maintained in a high vacuum state in the process of manufacturing the organic light emitting element. The pass chamber 15 is usually maintained in a low vacuum state, but may be maintained in a high vacuum state if necessary.

In the present embodiment, the configuration of the electronic device manufacturing apparatus has been described with reference to FIG. 1, but the present invention is not limited to this, and other types of apparatus and chambers may be provided, and these devices may be provided. And the arrangement between the chambers may change.

Hereinafter, a specific configuration of the film forming apparatus 11 will be described.
<Film formation device>
FIG. 2 is a schematic view showing the configuration of the film forming apparatus 11. In the following description, an XYZ Cartesian coordinate system with the vertical direction as the Z direction is used. When the substrate S is fixed so as to be parallel to the horizontal plane (XY plane) at the time of film formation, the lateral direction (direction parallel to the short side) of the substrate S is the X direction, and the longitudinal direction (direction parallel to the long side) is set. It is in the Y direction. Further, the rotation angle around the Z axis is represented by θ.

The film forming apparatus 11 includes a vacuum vessel 21 maintained in a vacuum atmosphere or an atmosphere of an inert gas such as nitrogen gas, a substrate support unit 22 provided inside the vacuum vessel 21, a mask support unit 23, and an electrostatic chuck. 24 and the evaporation source 25.

The board support unit 22 is a means for receiving and holding the board S carried by the transfer robot 14 provided in the transfer chamber 13, and is also called a board holder. The board support unit 22 includes a support portion that supports the peripheral edge portion of the lower surface of the board. The detailed configuration of the support portion of the board support unit 22 will be described later.

A mask support unit 23 is provided below the board support unit 22. The mask support unit 23 is a means for receiving and holding the mask M transported by the transfer robot 14 provided in the transfer chamber 13, and is also called a mask holder.

The mask M has an opening pattern corresponding to the thin film pattern formed on the substrate S, and is placed on the mask support unit 23. In particular, the mask used for manufacturing an organic EL element for a smartphone is a metal mask on which a fine opening pattern is formed, and is also called FMM (Fine Metal Mask).

An electrostatic chuck 24 for attracting and fixing the substrate by electrostatic attraction is provided above the substrate support unit 22. The electrostatic chuck 24 has a structure in which an electric circuit such as a metal electrode is embedded in a dielectric (for example, ceramic material) matrix. The electrostatic chuck 24 may be a Coulomb force type electrostatic chuck, a Johnson-Labeck force type electrostatic chuck, or a gradient force type electrostatic chuck. The electrostatic chuck 24 is preferably a gradient force type electrostatic chuck. Since the electrostatic chuck 24 is a gradient force type electrostatic chuck, even when the substrate S is an insulating substrate, it can be satisfactorily adsorbed by the electrostatic chuck 24. When the electrostatic chuck 24 is a Coulomb force type electrostatic chuck, when positive (+) and negative (-) potentials are applied to the metal electrode, it is applied to the object to be adsorbed such as the substrate S through the dielectric matrix. A polarization charge having the opposite polarity to that of the metal electrode is induced, and the substrate S is attracted and fixed to the electrostatic chuck 24 by the electrostatic attraction between them.

The electrostatic chuck 24 may be formed of one plate or may be formed to have a plurality of sub-plates. Further, even when formed by one plate, a plurality of electric circuits may be included therein and controlled so that the electrostatic attraction is different depending on the position in one plate. That is, the electrostatic chuck can be divided into a plurality of suction unit modules according to the structure of the embedded electric circuit. The configuration of the suction portion of the electrostatic chuck 24 and the details of the control method for applying the suction voltage will be described later.

Although not shown, a magnetic force applying means for applying a magnetic force to the mask M at the time of film formation and attracting the mask M to the substrate S side and bringing the mask M into close contact with the substrate S can be installed on the upper portion of the electrostatic chuck 24. .. The magnet as the magnetic force applying means can consist of a permanent magnet or an electromagnet and can be partitioned into a plurality of modules.

Further, although not shown in FIG. 2, by providing a cooling mechanism (for example, a cooling plate) for suppressing the temperature rise of the substrate S on the side opposite to the suction surface of the electrostatic chuck 24, the particles are deposited on the substrate S. The deterioration or deterioration of the organic material may be suppressed. The cooling plate can also be formed integrally with the magnet.

The evaporation source 25 includes a crucible (not shown) in which the vapor-film-deposited material formed on the substrate is stored, a heater for heating the crucible (not shown), and the vapor-filmed material on the substrate until the evaporation rate from the evaporation source becomes constant. Includes shutters (not shown) that prevent scattering. The evaporation source 25 can have various configurations depending on the application, such as a point evaporation source and a linear evaporation source.

Although not shown in FIG. 2, the film forming apparatus 11 includes a film thickness monitor (not shown) and a film thickness calculation unit (not shown) for measuring the thickness of the film deposited on the substrate.

A substrate Z actuator 26, a mask Z actuator 27, an electrostatic chuck Z actuator 28, a position adjusting mechanism 29, and the like are provided on the upper outer side (atmosphere side) of the vacuum vessel 21. These actuators and the position adjusting mechanism are composed of, for example, a motor and a ball screw, or a motor and a linear guide. The board Z actuator 26 is a driving means for raising and lowering (moving in the Z direction) the board support unit 22. The details of the elevating control of the substrate support unit 22 by driving the substrate Z actuator 26 will be described later. The mask Z actuator 27 is a driving means for raising and lowering (moving in the Z direction) the mask support unit 23. The electrostatic chuck Z actuator 28 is a driving means for raising and lowering (moving in the Z direction) the electrostatic chuck 24.

The position adjusting mechanism 29 is a driving means for adjusting (aligning) the positional deviation between the electrostatic chuck 24 and the substrate S and / or between the substrate S and the mask M. That is, the position adjusting mechanism 29 relatives the electrostatic chuck 24 to the substrate support unit 22 and the mask support unit 23 in at least one of the X direction, the Y direction, and the θ direction in a plane parallel to the horizontal plane. It is a horizontal drive mechanism for moving / rotating. In this embodiment, the movement of the substrate support unit 22 and the mask support unit 23 in the horizontal plane is fixed, and the position adjustment mechanism is configured to move the electrostatic chuck 24 in the X, Y, and θ directions. However, the present invention is not limited to this, and even if the position adjustment mechanism is configured so that the movement of the electrostatic chuck 24 in the horizontal direction is fixed and the substrate support unit 22 and the mask support unit 23 are moved in the XYθ direction. good.

On the outer upper surface of the vacuum container 21, in addition to the drive mechanism described above, for alignment for photographing the alignment marks formed on the substrate S and the mask M through the transparent window provided on the upper surface of the vacuum container 21. Cameras 20a and 20b are installed. By recognizing the alignment mark on the substrate S and the alignment mark on the mask M from the images taken by the alignment cameras 20a and 20b, it is possible to measure the respective XY positions and relative deviations in the XY plane.

The alignment between the substrate S and the mask M is the first alignment (also referred to as "rough alignment"), which is the first position adjustment step for roughly aligning, and the first alignment for high-precision alignment. It is possible to carry out a two-step alignment of a second alignment (also referred to as “fine alignment”), which is a two-position adjustment step. In this case, it is preferable to use two types of cameras, a low-resolution but wide-field first alignment camera 20a and a narrow-field but high-resolution second alignment camera 20b. For each of the substrate S and the mask 120, the alignment marks attached to two points on the pair of opposite sides are measured by the two first alignment cameras 20a, and the alignment marks attached to the four corners of the substrate S and the mask 120 are measured. Is measured by four second alignment cameras 20b. The number of alignment marks and measurement cameras thereof is not particularly limited. For example, in the case of fine alignment, the marks attached to the two opposite corners of the substrate S and the mask 120 may be measured by two cameras. good.

The film forming apparatus 11 includes a control unit (not shown). The control unit has functions such as transfer and alignment of the substrate S, control of the evaporation source 25, and control of film formation. The control unit can be configured by, for example, a computer having a processor, memory, storage, I / O, and the like. In this case, the function of the control unit is realized by the processor executing the program stored in the memory or the storage. As the computer, a general-purpose personal computer may be used, or an embedded computer or a PLC (programmable logical controller) may be used. Alternatively, a part or all of the functions of the control unit may be configured by a circuit such as an ASIC or FPGA. Further, a control unit may be installed for each film forming apparatus, or one control unit may be configured to control a plurality of film forming apparatus.
<Board support unit>
The substrate support unit 22 includes a support portion that supports the peripheral edge portion of the lower surface of the substrate S. FIG. 3 is a plan view of the substrate support unit 22 viewed from above in the vertical direction (Z direction), and shows how the substrate S is placed and supported on the substrate support unit 22 for convenience of understanding. In addition, the driving mechanisms such as the electrostatic chuck 24 and the substrate Z actuator 26 arranged on the upper part of the substrate S are not shown.

As shown, the support portions constituting the substrate support unit 22 include support portions 221 and 222 that can be independently lifted and controlled, and these support portions 221 and 222 are located on two opposite sides of the substrate S. It is installed to support the peripheral edge. Specifically, of the two opposing sides of the substrate S, the first support portion 221 is installed along one side side (for example, the first long side), and along the other side side (second long side). A second support portion 222 is installed. FIG. 3 shows a configuration in which the first support portion 221 and the second support portion 222 are each composed of one support member extending long in the direction of the side thereof, but the first support portion 221 and the second support portion 221 are shown. In the support portion 222, a plurality of support members may be arranged along the direction of the side to form a first support portion 221 and a second support portion 222, respectively.

The above-mentioned substrate Z actuator 26, which is a drive mechanism for driving the substrate support unit 22 up and down in the Z-axis direction, is installed corresponding to each of the substrate support portions 221, 222. That is, two board Z actuators are installed at positions corresponding to the two opposite long sides of the board S, and are connected to the corresponding board support portions 221 and 222, respectively. Then, each of these substrate Z actuators is controlled by the control unit so that the corresponding substrate support portions 221 and 222 can be raised and lowered independently.

In one embodiment of the present invention, the substrate support unit 22 is raised when the substrate S supported by the substrate support unit 22 is raised toward the electrostatic chuck 24 in order to attract the substrate S to the electrostatic chuck 24. The plurality of substrate support portions 221 and 222 to be configured are independently moved up and down. For example, first, the substrate Z actuator 26 in contact with the first support portion 221 is driven to raise the first support portion 221 to a position in the vicinity of the electrostatic chuck 24 first. In this state, the first long side of the substrate S supported by the first support portion 221 by the adsorption voltage applied to the electrostatic chuck 24 region at a position facing the first support portion 221 across the substrate S. The side is first attracted to the electrostatic chuck 24. In this way, the peripheral edge portion on one side of the substrate S is first adsorbed, and this is set as the adsorption starting point. After the suction starting point is set, by controlling the suction region of the electrostatic chuck 24 described later, suction proceeds sequentially toward the opposite long side (second long side) through the central portion of the substrate S. To go. At this time, when the adsorption is performed to the peripheral edge portion on the opposite side, the substrate support portion (second support portion 222) on the other side that supported the peripheral edge portion on the opposite side is the electrostatic chuck 24. It is not raised to a nearby position, that is, a position where the substrate S is clamped to the electrostatic chuck 24. In short, it is preferable that the support portion on the other side (second support portion 222) is raised by a predetermined distance within a range that assists the adsorption progress in the direction toward the support portion. In other words, it rises to a position where the substrate S is sandwiched between the electrostatic chuck 24 and the substrate S, and the movement of the end portion of the substrate S at that position is not restrained by the support portion (second support portion 222) on the other side. Is preferable. Alternatively, the support portion on the other side (second support portion 222) does not have to be driven upward toward the electrostatic chuck 24. As described above, in one embodiment of the present invention, one of the support portions supporting the opposite side peripheral portions of the substrate S is raised to a position where it first contacts or is close to the electrostatic chuck. The position is set as the suction starting point, and then the support portion on the other side of the electrostatic chuck 24 is maintained in a state of being separated from the electrostatic chuck (that is, not restraining the sliding movement of the edge of the substrate). It is characterized in that adsorption is performed toward the peripheral portion on the other side by controlling the adsorption region.

This configuration solves the conventional problem that the substrate is restrained on the other support portion side as shown in FIG. 7 described above, adsorption is performed without completely eliminating the deflection in the central portion, and wrinkles remain in the central portion. become able to. Therefore, it is possible to more effectively suppress the generation of wrinkles at the time of adsorption to the electrostatic chuck.

<Control of the suction area of the electrostatic chuck 24>
As described above, in the present invention, after the adsorption starting point is set on one side peripheral edge of the substrate, the adsorption is advanced toward the opposite peripheral edge by controlling the adsorption area of the electrostatic chuck 24. do.

The configuration of the suction portion of the electrostatic chuck according to the embodiment of the present invention will be described with reference to FIGS. 4a to 4c.

4a is a conceptual block diagram of the electrostatic chuck system 30 of the present embodiment, FIG. 4b is a schematic cross-sectional view of the electrostatic chuck 24, and FIG. 4c is a schematic diagram of the electrostatic chuck 24. It is a plan view.

As shown in FIG. 4a, the electrostatic chuck system 30 of the present embodiment includes an electrostatic chuck 24, a voltage application unit 31, and a voltage control unit 32.

The voltage application unit 31 applies a voltage for generating an electrostatic attraction to the electrode unit of the electrostatic chuck 24.

The voltage control unit 32 determines the magnitude of the voltage applied to the electrode unit by the voltage application unit 31 according to the progress of the adsorption process of the electrostatic chuck system 30 or the film formation process of the film forming apparatus 11, and the time when the voltage application starts. It controls the voltage maintenance time, voltage application order, etc. For example, the voltage control unit 32 can independently control the voltage application to the plurality of sub-electrode units 241 to 249 included in the electrode unit of the electrostatic chuck 24 for each sub-electrode unit. In the present embodiment, the voltage control unit 32 is embodied separately from the control unit of the film forming apparatus 11, but the present invention is not limited to this and may be integrated into the control unit of the film forming apparatus 11.

The electrostatic chuck 24 includes an electrode portion that generates an electrostatic adsorption force for adsorbing an object to be adsorbed (for example, the substrate S) on the adsorption surface, and the electrode portion may include a plurality of sub-electrode portions 241 to 249. can. For example, the electrostatic chuck 24 of the present embodiment has, as shown in FIG. 4c, along the longitudinal direction (Y direction) of the electrostatic chuck 24 and / or along the lateral direction (X direction) of the electrostatic chuck 24. , Includes a plurality of divided sub-electrode portions 241 to 249.

Each sub-electrode portion includes an electrode pair 33 to which positive (first polar) and negative (second polar) potentials are applied to generate electrostatic adsorption forces. For example, each electrode pair 33 includes a first electrode 331 to which a positive potential is applied and a second electrode 332 to which a negative potential is applied.

The first electrode 331 and the second electrode 332 each have a comb shape as shown in FIG. 4c. For example, the first electrode 331 and the second electrode 332 each include a plurality of comb tooth portions and a base connected to the plurality of comb tooth portions. The base of each of the electrodes 331 and 332 supplies an electric potential to the comb tooth portion, and the plurality of comb tooth portions generate an electrostatic adsorption force with the object to be adsorbed. In one sub-electrode portion, each comb tooth portion of the first electrode 331 is alternately arranged so as to face each comb tooth portion of the second electrode 332. By forming the comb teeth of the electrodes 331 and 332 facing each other and intricately intertwined with each other in this way, the distance between the electrodes to which different potentials are applied can be narrowed, and a large unequal electric field is formed. However, the substrate S can be adsorbed by the gradient force.

In the present embodiment, it has been described that the electrodes 331 and 332 of the sub-electrode portions 241 to 249 of the electrostatic chuck 24 have a comb shape, but the present invention is not limited to this, and electrostatic electricity is generated between the electrodes and the object to be adsorbed. It can have a variety of shapes as long as it can generate an attractive force.

The electrostatic chuck 24 of the present embodiment has a plurality of suction portions corresponding to a plurality of sub-electrode portions. For example, as shown in FIG. 4c, the electrostatic chuck 24 of the present embodiment has nine suction portions corresponding to the nine sub-electrode portions 241 to 249, but the suction is not limited to this, and the substrate S can be attracted. In order to control it more precisely, it may have another number of adsorption portions.

The plurality of adsorption portions may be embodied by physically one plate having a plurality of electrode portions, or by having each of the plurality of physically divided plates having one or more electrode portions. It may be embodied. In the embodiment shown in FIG. 4c, each of the plurality of adsorption portions may be embodied so as to correspond to each of the plurality of sub-electrode portions, or one adsorption portion may be embodied so as to include the plurality of sub-electrode portions. good.

For example, by controlling the application of voltage to the sub-electrode units 241 to 249 by the voltage control unit 32, the substrate S is arranged in a direction (Y direction) intersecting the adsorption traveling direction (X direction) of the substrate S, as will be described later. The three sub-electrode portions 241 and 244, 247 can form one suction portion. That is, each of the three sub-electrode units 241 and 244, 247 can independently control the voltage, but by controlling so that the voltage is applied to these three sub-electrode units 241 and 244, 247 at the same time. , These three electrode portions 241 and 244, 247 can be made to function as one suction portion. As long as the substrate can be independently adsorbed to each of the plurality of adsorption portions, its specific physical structure and electric circuit structure may change.

In FIG. 5, in the electrostatic chuck 24 having the above configuration, the substrate S is sequentially moved from the peripheral edge portion on one side toward the peripheral edge portion on the opposite side by controlling the adsorption voltage applied to each adsorption portion. The detailed process of adsorbing to the surface is illustrated. Here, three sub-electrode portions 241 and 244, 247 arranged along the long side direction (Y direction) of the electrostatic chuck 24 form a first suction portion (C1), and the electrostatic chuck 24 has. The three sub-electrode portions 242, 245, and 248 in the central portion form the second adsorption portion (C2), and the remaining three sub-electrode portions 243, 246, and 249 form the third adsorption portion (C3). This will be explained on the premise of that.

As described above, in a state where the substrate S is carried into the vacuum container 21 of the film forming apparatus 11 and placed on the support portion of the substrate support unit 22, the first support that supports one side peripheral portion of the substrate S is supported. The unit 221 rises first. When the one-side peripheral edge portion of the substrate S is sufficiently close to or in contact with the lower surface of the electrostatic chuck 24 due to the rise of the first support portion 221, the voltage control unit 32 is arranged at a position corresponding to the first support portion 221. The substrate adsorption voltage (ΔV1) is controlled to be applied to the sub-electrode portion of the electrostatic chuck 24, that is, the three sub-electrode portions 241, 244, and 247 constituting the first suction portion (C1) (. FIG. 5 (a)). As a result, as described above, the one-side peripheral edge portion of the substrate S supported by the first support portion 221 is attracted to the electrostatic chuck 24, and the adsorption starting point is set.

Subsequently, in the voltage control unit 32, the substrate adsorption voltage (ΔV1) is applied to the three sub-electrode portions 242, 245, and 248 in the central portion of the electrostatic chuck 24 constituting the second adsorption portion (C2). By controlling, the adsorption starting from one side peripheral portion of the substrate S is performed toward the opposite peripheral edge portion to the region corresponding to approximately half of the substrate S including the central portion of the substrate S (). FIG. 5 (b).

Finally, the voltage control unit 32 controls the substrate adsorption voltage (ΔV1) to be applied to the three sub-electrode units 243, 246, and 249 constituting the third adsorption unit (C3), whereby the substrate S The entire region including the other peripheral edge is adsorbed (FIG. 5 (c)).

Each left side drawing of FIG. 5 is a cross-sectional view showing the above-mentioned adsorption progress process, and each right-side drawing of FIG. 5 is a top view conceptually showing the adsorption state of the substrate S at each of the above voltage application stages. It is a top view (top view) seen from the electrostatic chuck 24 side. The substrate adsorption area at each stage is shown by diagonal lines.

After the adsorption starting point is set on one side peripheral edge, when the adsorption progresses to the opposite side peripheral edge by controlling the adsorption area of the electrostatic chuck 24, the opposite side peripheral edge is supported as described above. The support portion on the other side (second support portion 222), which has been used, holds the substrate between the electrostatic chuck 24 and the support portion (clamp) even when the support portion (second support portion 222) is not driven ascending or is driven ascending to assist the adsorption progress. ) Do not control so that it rises only to a predetermined position.

As a result, the problem that the movement of the end portion of the substrate S is restrained by the other side support portion (second support portion 222) and the deflection of the central portion of the substrate is not eliminated can be effectively suppressed.
<Film formation process>
Hereinafter, a film forming method using the film forming apparatus according to the present embodiment will be described.

The substrate S is carried into the vacuum container 21 with the mask M supported by the mask support unit 23 in the vacuum container 21. The substrate S is adsorbed on the electrostatic chuck 24 through the substrate adsorption step described above. Next, after the substrate S and the mask M are aligned, when the relative positional deviation amount between the substrate S and the mask M becomes smaller than a predetermined threshold value, the magnetic force applying means is lowered to bring the substrate S and the mask M into close contact with each other. The film-forming material is formed on the substrate S. After forming a film to a desired thickness, the magnetic force applying means is raised to separate the mask M, and the substrate S is carried out.
<Manufacturing method of electronic devices>
Next, an example of a method for manufacturing an electronic device using the film forming apparatus of this embodiment will be described. Hereinafter, as an example of the electronic device, the configuration and manufacturing method of the organic EL display device will be illustrated.

First, the organic EL display device to be manufactured will be described. FIG. 6A shows an overall view of the organic EL display device 60, and FIG. 6B shows a cross-sectional structure of one pixel.

As shown in FIG. 6A, a plurality of pixels 62 including a plurality of light emitting elements are arranged in a matrix in the display area 61 of the organic EL display device 60. Although the details will be described later, each of the light emitting elements has a structure including an organic layer sandwiched between a pair of electrodes. The pixel referred to here refers to the smallest unit capable of displaying a desired color in the display area 61. In the case of the organic EL display device according to this embodiment, the pixel 62 is composed of a combination of the first light emitting element 62R, the second light emitting element 62G, and the third light emitting element 62B, which emit light different from each other. The pixel 62 is often composed of a combination of a red light emitting element, a green light emitting element, and a blue light emitting element, but may be a combination of a yellow light emitting element, a cyan light emitting element, and a white light emitting element, and is particularly limited to at least one color. It is not limited.

FIG. 6B is a schematic partial cross-sectional view taken along the line AB of FIG. 6A. The pixel 62 has an organic EL element having an anode 64, a hole transport layer 65, any of the light emitting layers 66R, 66G, 66B, an electron transport layer 67, and a cathode 68 on the substrate 63. There is. Of these, the hole transport layer 65, the light emitting layer 66R, 66G, 66B, and the electron transport layer 67 correspond to the organic layer. Further, in the present embodiment, the light emitting layer 66R is an organic EL layer that emits red, the light emitting layer 66G is an organic EL layer that emits green, and the light emitting layer 66B is an organic EL layer that emits blue. The light emitting layers 66R, 66G, and 66B are formed in a pattern corresponding to a light emitting element (sometimes referred to as an organic EL element) that emits red, green, and blue, respectively. Further, the anode 64 is formed separately for each light emitting element. The hole transport layer 65, the electron transport layer 67, and the cathode 68 may be formed in common with the plurality of light emitting elements 62R, 62G, 62B, or may be formed for each light emitting element. An insulating layer 69 is provided between the anode 64 in order to prevent the anode 64 and the cathode 68 from being short-circuited by foreign matter. Further, since the organic EL layer is deteriorated by moisture and oxygen, a protective layer 70 for protecting the organic EL element from moisture and oxygen is provided.

In FIG. 6B, the hole transport layer 65 and the electron transport layer 67 are shown as one layer, but they are formed of a plurality of layers including the hole block layer and the electron block layer due to the structure of the organic EL display element. May be done. Further, between the anode 64 and the hole transport layer 65, a hole injection layer having an energy band structure capable of smoothly injecting holes from the anode 64 into the hole transport layer 65 is provided. It can also be formed. Similarly, an electron injection layer can be formed between the cathode 68 and the electron transport layer 67.

Next, an example of a method for manufacturing an organic EL display device will be specifically described.

First, a circuit board (not shown) for driving the organic EL display device and a substrate 63 on which the anode 64 is formed are prepared.

Acrylic resin is formed by spin coating on the substrate 63 on which the anode 64 is formed, and the acrylic resin is patterned by a lithography method so that an opening is formed in the portion where the anode 64 is formed to form an insulating layer 69. .. This opening corresponds to a light emitting region where the light emitting element actually emits light.

The substrate 63 in which the insulating layer 69 is patterned is carried into the first organic material film forming apparatus, the substrate is held by the substrate holding unit and the electrostatic chuck, and the hole transport layer 65 is placed on the anode 64 in the display region. A film is formed as a common layer. The hole transport layer 65 is formed by vacuum deposition. In reality, the hole transport layer 65 is formed in a size larger than that of the display region 61, so that a high-definition mask is unnecessary.

Next, the substrate 63 on which the hole transport layer 65 is formed is carried into the second organic material film forming apparatus and held by the substrate holding unit and the electrostatic chuck. The substrate and the mask are aligned, the substrate is placed on the mask, and the light emitting layer 66R that emits red is formed on the portion of the substrate 63 where the element that emits red is arranged.

Similar to the film formation of the light emitting layer 66R, the light emitting layer 66G that emits green is formed by the third organic material film forming apparatus, and the light emitting layer 66B that emits blue is further formed by the fourth organic material forming apparatus. .. After the film formation of the light emitting layers 66R, 66G, and 66B is completed, the electron transport layer 67 is formed on the entire display region 61 by the fifth film forming apparatus. The electron transport layer 67 is formed as a layer common to the light emitting layers 66R, 66G, and 66B of three colors.

The substrate formed up to the electron transport layer 67 is moved by a metallic vapor deposition material film forming apparatus to form a cathode 68.

After that, it moves to a plasma CVD device to form a protective layer 70, and the organic EL display device 60 is completed.

From the time when the substrate 63 in which the insulating layer 69 is patterned is carried into the film forming apparatus until the film formation of the protective layer 70 is completed, when the substrate 63 is exposed to an atmosphere containing moisture or oxygen, a light emitting layer made of an organic EL material is formed. It may be deteriorated by moisture and oxygen. Therefore, in this example, the loading and unloading of the substrate between the film forming apparatus is performed in a vacuum atmosphere or an inert gas atmosphere.

The above embodiment shows an example of the present invention, and the present invention is not limited to the configuration of the above embodiment, and may be appropriately modified within the scope of the technical idea.

11: Film forming apparatus, 22: Substrate support unit, 221, 222: Support part, 23: Mask support unit, 24: Electrostatic chuck, 241-249: Sub-electrode part

Claims (9)

A film forming device that deposits a film forming material on a substrate via a mask.
A first substrate support portion that is arranged in the chamber and supports the peripheral edge portion of the first side of the substrate, and a first substrate support portion.
A second substrate support that is disposed in the chamber and supports the peripheral edge of the second side of the substrate that faces the first side.
A substrate adsorption means for adsorbing the substrate, which is arranged above the first and second substrate support portions in the chamber.
Includes a control unit that independently controls the elevating and lowering of the first and second substrate support portions toward the substrate adsorption means.
The substrate adsorption means is an electrostatic chuck, and a first adsorption region that adsorbs the peripheral edge of the first side of the substrate by applying an adsorption voltage for adsorbing the substrate, and the substrate. It has a second adsorption region for adsorbing the peripheral edge of the second side of the substrate by applying an adsorption voltage for adsorbing the first adsorption region and the second adsorption region. Controls the area independently of the adsorbed state and the non-adsorbed state,
When the substrate is adsorbed by the substrate adsorption means, the control unit moves the first substrate support portion to a first position which is a first distance from the substrate adsorption means, and the second substrate support portion. To a second position, which is a second distance away from the first distance from the substrate suction means.
The substrate suction means moves the first substrate support portion to the first position and the second substrate support portion moves to the second position, and the substrate suction means moves to the first suction region. By applying the adsorption voltage for adsorbing the substrate, the first adsorption region is put into the adsorption state, and the adsorption voltage for adsorbing the substrate is not applied to the second adsorption region. After controlling the second adsorption region to the non-adsorption state, the second adsorption region is moved from the non-adsorption state to the non-adsorption state by applying an adsorption voltage for adsorbing the substrate to the second adsorption region. A film forming apparatus characterized in that the substrate is separated from the second substrate support portion at the second position by controlling the adsorption state and adsorbing the substrate. The claim is characterized in that, when the substrate is adsorbed by the substrate adsorption means, the second substrate support portion is controlled to move to the second position by being driven ascending by the control unit. Item 1. The film forming apparatus according to Item 1. The film formation according to claim 1 or 2 , wherein the second position is a position where a part of the substrate placed on the second substrate support portion does not come into contact with the substrate adsorption means. Device. The result according to any one of claims 1 to 3 , wherein the second substrate support portion is not driven ascending from the second position when the substrate is adsorbed by the substrate adsorption means. Membrane device. This is a film forming method for forming a film forming material on the film forming surface of a substrate via a mask in the chamber of the film forming apparatus.
The peripheral edge of the first side of the substrate carried into the chamber is supported by the first substrate support portion, and the peripheral edge of the second side facing the first side is supported by the second substrate support portion. The process to support and
A suction step of sucking a surface opposite to the film-forming surface of the substrate to a substrate suction means arranged above the first and second substrate support portions in the chamber.
Including a step of forming a film-forming material on the film-forming surface of the substrate via the mask.
The substrate adsorption means is an electrostatic chuck, and a first adsorption region that adsorbs the peripheral edge of the first side of the substrate by applying an adsorption voltage for adsorbing the substrate, and the substrate. It has a second adsorption region for adsorbing the peripheral edge of the second side of the substrate by applying an adsorption voltage for adsorbing the first adsorption region and the second adsorption region. Controls the area independently of the adsorbed state and the non-adsorbed state,
The adsorption step is
The first substrate support portion is moved to the first position which is the first distance from the substrate suction means, and the second substrate support portion is separated from the substrate suction means by the first distance. The process of moving to the second position, which is a distance of 2,
The substrate suction means moves the first substrate support portion to the first position and the second substrate support portion moves to the second position, and the substrate suction means moves to the first suction region. By applying the adsorption voltage for adsorbing the substrate, the first adsorption region is put into the adsorption state, and the adsorption voltage for adsorbing the substrate is not applied to the second adsorption region. After controlling the second adsorption region to the non-adsorption state, the second adsorption region is moved from the non-adsorption state to the non-adsorption state by applying an adsorption voltage for adsorbing the substrate to the second adsorption region. It is characterized by including a step of separating the substrate from the second substrate support portion at the second position by controlling the adsorption state and adsorbing the substrate to the substrate adsorption means. Film formation method. The film forming method according to claim 5 , wherein in the adsorption step, the second substrate support portion is driven ascending to move to the second position. The film formation according to claim 5 or 6 , wherein the second position is a position where a part of the substrate placed on the second substrate support portion does not come into contact with the substrate adsorption means. Method. The film forming method according to any one of claims 5 to 7 , wherein in the adsorption step, the second substrate support portion is not driven ascending from the second position. A method for manufacturing an electronic device, which comprises manufacturing an electronic device by using the film forming method according to any one of claims 5 to 8 .

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