JP2020053663A - Electrostatic chuck system, deposition device, adsorbed body separation method, deposition method and manufacturing method for electronic device - Google Patents

Abstract

To satisfactorily separate a first adsorbed body and a second adsorbed body adsorbed onto an electrostatic chuck from the electrostatic chuck.SOLUTION: The electrostatic chuck system includes an electrostatic chuck including electrode parts; a voltage control section for controlling a voltage to be applied to the electrode parts of the electrostatic chuck. When a first adsorbed body is adsorbed on the electrode part of the electrostatic chuck and a second adsorbed body is adsorbed on the electrode part of the electrostatic chuck through the first adsorbed body, the voltage control section applies a separation voltage for separating the first adsorbed body and the second adsorbed body in contact with each other together from the electrostatic chuck.SELECTED DRAWING: Figure 7

Description

  The present invention relates to an electrostatic chuck system, a film forming apparatus, a method for separating an object to be adsorbed, a film forming method, and a method for manufacturing an electronic device.

  In manufacturing an organic EL display device (organic EL display), when forming an organic light emitting element (organic EL element; OLED) constituting the organic EL display device, a vapor deposition material evaporated from an evaporation source of a film forming apparatus is used. An organic layer or a metal layer is formed by vapor deposition on a substrate through a mask on which a pixel pattern is formed.

  In an upward deposition type (deposition-up) film forming apparatus, an evaporation source is provided at a lower part of a vacuum container of the film forming apparatus, and a substrate is arranged at an upper part of the vacuum container and is vapor-deposited on a lower surface of the substrate. In the vacuum chamber of such an upward evaporation type film forming apparatus, the substrate is held only by the peripheral portion of the lower surface of the substrate by the substrate holder, and the substrate is bent by its own weight, which is one factor that lowers the deposition accuracy. ing. Also in a film forming apparatus other than the upward vapor deposition method, there is a possibility that the substrate may be bent by its own weight.

  As a method for reducing the deflection of the substrate due to its own weight, a technique using an electrostatic chuck has been studied. That is, the entire upper surface of the substrate is attracted by the electrostatic chuck, so that the deflection of the substrate can be reduced.

  Patent Document 1 (Korean Patent Publication No. 2007-0010723) proposes a technique for adsorbing a substrate and a mask by an electrostatic chuck.

Korean Patent Publication No. 2007-0010723

  However, Patent Document 1 does not disclose voltage control when separating a substrate and a mask as an object to be attracted from an electrostatic chuck.

  SUMMARY OF THE INVENTION It is an object of the present invention to satisfactorily separate a first object to be attracted and a second object to be attracted onto an electrostatic chuck from the electrostatic chuck.

  An electrostatic chuck system according to an embodiment of the present invention includes: an electrostatic chuck including an electrode unit; and a voltage control unit for controlling a voltage applied to the electrode unit of the electrostatic chuck. The voltage control unit is configured such that when the first object to be adsorbed is adsorbed to the electrode unit of the electrostatic chuck and the second object to be adsorbed is adsorbed to the electrode unit of the electrostatic chuck via the first object to be adsorbed. And applying a separation voltage for separating the first object to be adsorbed and the second object to be adsorbed from each other from the electrostatic chuck.

A film forming apparatus according to one embodiment of the present invention is a film forming apparatus for forming a film on a substrate via a mask, and adsorbs a substrate as a first object to be adsorbed and a mask as a second object to be adsorbed. And an electrostatic chuck system according to an embodiment of the present invention.

  An object-to-be-adsorbed separation method according to an embodiment of the present invention is a separation method for separating an object-to-be-adsorbed adsorbed to an electrode portion of an electrostatic chuck from an electrode portion of the electrostatic chuck, wherein When the first object to be adsorbed is adsorbed and the second object to be adsorbed is adsorbed to the electrode portion of the electrostatic chuck via the first object to be adsorbed, A step of applying a separation voltage for separating the two attracted bodies from the electrostatic chuck together, and after the step of applying the voltage, moving a supporting means for supporting the first attracted body, Separating the first object to be adsorbed from the second object to be adsorbed.

  A film forming method according to an embodiment of the present invention is a method of forming a deposition material on a substrate through a mask, wherein a step of carrying the mask into a vacuum vessel and a step of carrying the substrate into the vacuum vessel. Applying a first chucking voltage to an electrode portion of the electrostatic chuck to chuck the substrate to the electrostatic chuck; and applying a second chucking voltage to the electrode portion to apply the substrate to the electrostatic chuck. A step of adsorbing the mask through, and a step of evaporating an evaporation material in a state where the substrate and the mask are adsorbed to the electrostatic chuck, and forming a film of the evaporation material on the substrate through the mask, Using the separation method according to an embodiment of the present invention to include a step of separating the mask as a second object to be attracted and the substrate as a first object to be attracted from the electrostatic chuck. I do.

  An electronic device manufacturing method according to an embodiment of the present invention is characterized in that an electronic device is manufactured using the film forming method according to the embodiment of the present invention.

  ADVANTAGE OF THE INVENTION According to this invention, the 1st to-be-adsorbed object and the 2nd to-be-adsorbed object adsorbed by the electrostatic chuck can be separated well.

FIG. 1 is a schematic diagram of a part of an electronic device manufacturing apparatus. FIG. 2 is a schematic diagram of a film forming apparatus according to one embodiment of the present invention. FIG. 3a is a conceptual diagram of an electrostatic chuck system according to an embodiment of the present invention. FIG. 3b is a schematic cross-sectional view of an electrostatic chuck system according to one embodiment of the present invention. FIG. 3c is a schematic plan view of an electrostatic chuck system according to one embodiment of the present invention. FIG. 4 is a process diagram showing a sequence of attracting a substrate to an electrostatic chuck. FIG. 5 is a process diagram showing a sequence of attracting a mask to an electrostatic chuck. FIG. 6 is a process chart showing a separation sequence of the mask and the substrate from the electrostatic chuck. FIG. 7 is a graph showing a change in voltage applied to the electrostatic chuck. FIG. 8 is a schematic diagram illustrating an electronic device.

Hereinafter, preferred embodiments and examples of the present invention will be described with reference to the drawings. However, the following embodiments and examples are merely illustrative examples of preferred configurations of the present invention, and the scope of the present invention is not limited to those configurations. In the following description, the hardware configuration and software configuration of the apparatus, the processing flow, the manufacturing conditions, dimensions, materials, shapes, and the like limit the scope of the present invention to only these unless otherwise specified. It is not intended.
The present invention can be applied to an apparatus for forming a film by depositing various materials on the surface of a substrate, and can be desirably applied to an apparatus for forming a thin film (material layer) of a desired pattern by vacuum evaporation. As the material of the substrate, any material such as glass, a film of a polymer material, and a metal can be selected. The substrate may be, for example, a substrate in which a film such as a polyimide is laminated on a glass substrate. . In addition, an arbitrary material such as an organic material or a metallic material (metal, metal oxide, or the like) may be selected as a deposition material. The present invention can be applied to a film forming apparatus including a sputtering apparatus and a CVD (Chemical Vapor Deposition) apparatus other than the vacuum evaporation apparatus described in the following description. The technology of the present invention is specifically applicable to manufacturing apparatuses for organic electronic devices (for example, organic light-emitting devices, thin-film solar cells), optical members, and the like. Among them, an apparatus for manufacturing an organic light-emitting element that forms an organic light-emitting element by evaporating an evaporation material and evaporating the evaporation material on a substrate via a mask is one of the preferable application examples of the present invention.

<Electronic device manufacturing equipment>
FIG. 1 is a plan view schematically showing a configuration of a part of an electronic device manufacturing apparatus.
The manufacturing apparatus of FIG. 1 is used, for example, for manufacturing a display panel of an organic EL display device for a smartphone. In the case of a display panel for a smartphone, for example, a 4.5 generation substrate (about 700 mm × about 900 mm) or a 6 generation full size (about 1500 mm × about 1850 mm) or a half cut size (about 1500 mm × about 925 mm) substrate After forming a film for forming an organic EL element, the substrate is cut out to form a plurality of small-sized panels.

  An electronic device manufacturing apparatus generally includes a plurality of cluster apparatuses 1 and a relay apparatus connecting the cluster apparatuses.

  The cluster apparatus 1 includes a plurality of film forming apparatuses 11 for performing processing (for example, film formation) on the substrate S, a plurality of mask stock apparatuses 12 for storing masks M before and after use, and a transfer chamber 13 disposed at the center thereof. And The transfer chamber 13 is connected to each of the plurality of film forming apparatuses 11 and the mask stock apparatus 12, as shown in FIG.

  In the transfer chamber 13, a transfer robot 14 for transferring the substrate and the mask is arranged. The transfer robot 14 transfers the substrate S from the pass chamber 15 of the relay device arranged on the upstream side to the film forming apparatus 11. Further, the transfer robot 14 transfers the mask M between the film forming apparatus 11 and the mask stock apparatus 12. The transfer robot 14 is, for example, a robot having a structure in which a robot hand holding a substrate S or a mask M is attached to an articulated arm.

  In the film forming apparatus 11 (also referred to as an evaporation apparatus), an evaporation material stored in an evaporation source is heated and evaporated by a heater, and is evaporated on a substrate via a mask. A series of film forming processes such as transfer of the substrate S to and from the transfer robot 14, adjustment (alignment) of the relative position between the substrate S and the mask M, fixing of the substrate S on the mask M, and film formation (evaporation) This is performed by the device 11.

  In the mask stock apparatus 12, a new mask used in the film forming process in the film forming apparatus 11 and a used mask are stored in two cassettes. The transfer robot 14 transfers the used mask from the film forming apparatus 11 to the cassette of the mask stock apparatus 12, and transfers a new mask stored in another cassette of the mask stock apparatus 12 to the film forming apparatus 11.

The cluster apparatus 1 includes a pass chamber 15 for transporting the substrate S transported from the upstream side in the flow direction of the substrate S to the cluster apparatus 1 and a substrate S on which the film forming process is completed in the cluster apparatus 1 on the downstream side. A buffer chamber 16 for transport to another cluster device is connected. The transfer robot 14 in the transfer chamber 13 receives the substrate S from the upstream path chamber 15 and transfers the substrate S to one of the film forming apparatuses 11 (for example, the film forming apparatus 11a) in the cluster apparatus 1. Further, the transfer robot 14 receives the substrate S on which the film forming process has been completed in the cluster apparatus 1 from one of the plurality of film forming apparatuses 11 (for example, the film forming apparatus 11b), and connects the buffer S connected to the downstream side. It is transported to the chamber 16.

  A swirling chamber 17 that changes the direction of the substrate is provided between the buffer chamber 16 and the pass chamber 15. The swiveling chamber 17 is provided with a transfer robot 18 for receiving the substrate S from the buffer chamber 16, rotating the substrate S by 180 °, and transferring the substrate S to the pass chamber 15. Thereby, the orientation of the substrate S is the same in the upstream cluster device and the downstream cluster device, and the substrate processing is facilitated.

  The pass chamber 15, the buffer chamber 16, and the swirl chamber 17 are so-called relay devices that connect the cluster devices. The relay devices installed on the upstream and / or downstream of the cluster device include a pass room, a buffer room, At least one of the swivel chambers is included.

  The film forming apparatus 11, the mask stock apparatus 12, the transfer chamber 13, the buffer chamber 16, the swirl chamber 17, and the like are maintained in a high vacuum state in the process of manufacturing the organic light emitting device. The pass chamber 15 is normally maintained in a low vacuum state, but may be maintained in a high vacuum state as needed.

In this embodiment, the configuration of the electronic device manufacturing apparatus has been described with reference to FIG. 1. However, the present invention is not limited to this, and may have other types of apparatuses and chambers. Or the arrangement between chambers may be changed.
Hereinafter, a specific configuration of the film forming apparatus 11 will be described.

<Deposition equipment>
FIG. 2 is a schematic diagram illustrating a configuration of the film forming apparatus 11. In the following description, an XYZ orthogonal coordinate system in which the vertical direction is the Z direction is used. When the substrate S is fixed so as to be parallel to the horizontal plane (XY plane) at the time of film formation, the short direction (the direction parallel to the short side) of the substrate S is the X direction, and the long direction (the direction parallel to the long side). Let it be the Y direction. The rotation angle about the Z axis is represented by θ.

  The film forming apparatus 11 includes a vacuum vessel 21 maintained in a vacuum atmosphere or an inert gas atmosphere such as a nitrogen gas, a substrate support unit 22 provided inside the vacuum vessel 21, a mask support unit 23, and an electrostatic chuck. 24 and an evaporation source 25.

  The substrate support unit 22 is a unit that receives and holds the substrate S transported by the transport robot 14 provided in the transport chamber 13 and is also called a substrate holder.

  A mask support unit 23 is provided below the substrate support unit 22. The mask support unit 23 is a unit that receives and holds the mask M transported by the transport robot 14 provided in the transport chamber 13 and is also called a mask holder.

  The mask M has an opening pattern corresponding to the thin film pattern formed on the substrate S, and is mounted on the mask support unit 23. In particular, a mask used for manufacturing an organic EL element for a smartphone is a metal mask on which a fine opening pattern is formed, and is also called an FMM (Fine Metal Mask).

Above the substrate support unit 22, an electrostatic chuck 24 for adsorbing and fixing the substrate by electrostatic attraction is provided. The electrostatic chuck 24 has a structure in which an electric circuit such as a metal electrode is embedded in a dielectric matrix. The material of the dielectric is, for example, ceramic. The electrostatic chuck 24 may be a Coulomb force type electrostatic chuck, a Johnson-Rahbek force type electrostatic chuck, or a gradient force type electrostatic chuck. The electrostatic chuck 24 is preferably a gradient force type electrostatic chuck. By using a gradient force type electrostatic chuck as the electrostatic chuck 24, even when the substrate S is a substrate made of an insulating material, the substrate S can be satisfactorily sucked by the electrostatic chuck 24. When the electrostatic chuck 24 is a Coulomb force type electrostatic chuck, when a positive (+) and a negative (−) voltage is applied to the metal electrode, the electrostatic chuck 24 is applied to the substrate S or the like through the dielectric matrix. Polarized charges of opposite polarity to the metal electrodes are induced, and the substrate S is attracted and fixed to the electrostatic chuck 24 by electrostatic attraction between them.

  The electrostatic chuck 24 may be formed of one plate or may have a plurality of sub-plates. Further, even in the case where a single plate is formed, a plurality of electric circuits may be included therein, and control may be performed such that the electrostatic attraction differs depending on the position within one plate.

  In this embodiment, as described later, not only the substrate S (the first suction target) but also the mask M (the second suction target) is suctioned and held by the electrostatic chuck 24 before film formation. Thereafter, a film is formed while holding the substrate S (the first object to be sucked) and the mask M (the second object to be sucked) by the electrostatic chuck 24, and after the film formation is completed, the substrate S (the first object to be sucked) is formed. The holding by the electrostatic chuck 24 with respect to the body) and the mask M (the second suction body) is released.

  That is, in the present embodiment, the substrate S (first object to be sucked) placed vertically below the electrostatic chuck 24 is sucked and held by the electrostatic chuck, and then the substrate S (the first object to be sucked) is held. ), The mask M (the second object to be attracted) placed on the opposite side of the electrostatic chuck 24 is attracted and held by the electrostatic chuck 24 via the substrate S (the first object to be attracted). Then, after forming a film while holding the substrate S (first object to be adsorbed) and the mask M (second object to be adsorbed) by the electrostatic chuck 24, the substrate S (first object to be adsorbed) and the mask M The (second suction target) is peeled from the electrostatic chuck 24. At this time, the mask M (the second object) and the substrate S (the first object) are simultaneously peeled off from the electrostatic chuck 24. This will be described later with reference to FIGS.

  Although not shown in FIG. 2, by providing a cooling mechanism (for example, a cooling plate) for suppressing a temperature rise of the substrate S on the side opposite to the suction surface of the electrostatic chuck 24, the organic layer deposited on the substrate S is provided. It is good also as a structure which suppresses deterioration and deterioration of a material.

  The evaporation source 25 includes a crucible (not shown) in which a vapor deposition material to be formed on the substrate is stored, a heater (not shown) for heating the crucible, and a vapor deposition material on the substrate until the evaporation rate from the evaporation source becomes constant. And a shutter (not shown) for preventing the light from being scattered. The evaporation source 25 may have various configurations according to the application, such as a point evaporation source and a linear evaporation source.

  Although not shown in FIG. 2, the film forming apparatus 11 includes a film thickness monitor (not shown) for measuring the thickness of the film deposited on the substrate and a film thickness calculation unit (not shown).

  A substrate Z actuator 26, a mask Z actuator 27, an electrostatic chuck Z actuator 28, a position adjusting mechanism 29, and the like are provided on the upper outside (atmosphere side) of the vacuum vessel 21. These actuators and position adjustment mechanisms are composed of, for example, a motor and a ball screw, or a motor and a linear guide. The substrate Z actuator 26 is a driving unit for moving the substrate support unit 22 up and down (moving in the Z direction). The mask Z actuator 27 is a driving unit that moves the mask support unit 23 up and down (moves in the Z direction). The electrostatic chuck Z actuator 28 is a driving unit for moving the electrostatic chuck 24 up and down (moving in the Z direction).

  The position adjusting mechanism 29 is driving means for alignment of the electrostatic chuck 24. The position adjusting mechanism 29 moves the entire electrostatic chuck 24 in the X direction, the Y direction, and the θ rotation. Thereby, the position of the electrostatic chuck 24 with respect to the substrate support unit 22 and the mask support unit 23 changes. In the present embodiment, the alignment for adjusting the relative position between the substrate S and the mask M is performed by adjusting the position of the electrostatic chuck 24 in the X, Y, and θ directions while the substrate S is being sucked.

  On the outer upper surface of the vacuum vessel 21, in addition to the above-described driving mechanism, an alignment mark for photographing alignment marks formed on the substrate S and the mask M through a transparent window provided on the upper face of the vacuum vessel 21. A camera 20 may be provided. In this embodiment, the alignment camera 20 may be installed at a position corresponding to a diagonal line of the rectangular substrate S, the mask M, and the electrostatic chuck 24, or at a position corresponding to four rectangular corners.

  The alignment camera 20 installed in the film forming apparatus 11 of the present embodiment is a fine alignment camera used to adjust the relative position of the substrate S and the mask M with high accuracy, and has a narrow viewing angle. Is a camera with high resolution. The film forming apparatus 11 may include a rough alignment camera having a relatively wide viewing angle and low resolution in addition to the fine alignment camera 20.

  The position adjusting mechanism 29 includes a substrate S (first object) and a mask based on the positional information of the substrate S (first object) and the mask M (second object) acquired by the alignment camera 20. Alignment for adjusting the position by relatively moving M (the second object) is performed.

  The film forming apparatus 11 includes a control unit (not shown). The control unit has functions such as transport and alignment of the substrate S, control of the evaporation source 25, and control of film formation. The control unit can be configured by, for example, a computer having a processor, a memory, a storage, an I / O, and the like. In this case, the function of the control unit is realized by the processor executing a program stored in the memory or the storage. As the computer, a general-purpose personal computer may be used, or an embedded computer or a PLC (programmable logic controller) may be used. Alternatively, some or all of the functions of the control unit may be configured by a circuit such as an ASIC or an FPGA. Further, a control unit may be provided for each film forming apparatus, and one control unit may be configured to control a plurality of film forming apparatuses.

<Electrostatic chuck system>
The electrostatic chuck system 30 according to the present embodiment will be described with reference to FIGS. 3A to 3C.

  FIG. 3A is a conceptual block diagram of the electrostatic chuck system 30 of the present embodiment, FIG. 3B is a schematic sectional view of the electrostatic chuck 24, and FIG. FIG.

  As shown in FIG. 3A, the electrostatic chuck system 30 of the present embodiment includes an electrostatic chuck 24, a voltage application unit 31, and a voltage control unit 32.

The voltage applying unit 31 applies a voltage for generating an electrostatic attraction to the electrode unit of the electrostatic chuck 24.
The voltage control unit 32 controls the magnitude of the voltage applied to the electrode unit by the voltage applying unit 31 according to the progress of the suction process of the electrostatic chuck system 30 or the film forming process of the film forming apparatus 11, The voltage maintaining time, the voltage application sequence, and the like are controlled. The voltage controller 32 can independently control, for example, a voltage applied to a plurality of sub-electrodes 241 to 249 included in the electrodes of the electrostatic chuck 24 for each sub-electrode. In the present embodiment, the voltage control unit 32 is provided separately from the control unit of the film forming apparatus 11, but the present invention is not limited to this, and the voltage control unit 32 may be integrated with the control unit of the film forming apparatus 11. Good.

  The electrostatic chuck 24 includes an electrode unit that generates an electrostatic attraction force for adsorbing an object to be attracted (for example, the substrate S or the mask M) on the attraction surface, and the electrode unit includes a plurality of sub electrode units 241 to 249. Can be included. For example, as shown in FIG. 3C, the electrostatic chuck 24 of the present embodiment may be arranged along the longitudinal direction (Y direction) of the electrostatic chuck 24 and / or the short direction (X direction) of the electrostatic chuck 24. And a plurality of divided sub-electrode portions 241 to 249.

  Each sub-electrode unit includes an electrode pair 33 to which a positive (first polarity) and a negative (second polarity) voltage are applied to generate an electrostatic attraction force. For example, each electrode pair 33 includes a first electrode 331 to which a positive voltage is applied and a second electrode 332 to which a negative voltage is applied.

  The first electrode 331 and the second electrode 332 each have a comb shape as shown in FIG. 3C. For example, each of the first electrode 331 and the second electrode 332 includes a plurality of comb teeth and a base connected to the plurality of comb teeth. The base of each of the electrodes 331 and 332 supplies a voltage to the comb teeth, and the plurality of comb teeth generate an electrostatic attraction force with the object to be attracted. In one sub-electrode portion, the comb portions of the first electrode 331 are alternately arranged so as to face the comb portions of the second electrode 332. As described above, by forming the comb-tooth portions of the electrodes 331 and 332 to face each other and intersect each other, the interval between the electrodes to which different voltages are applied can be reduced, and a large uneven electric field is formed. Then, the substrate S can be adsorbed by the gradient force.

  In the present embodiment, it has been described that the electrodes 331 and 332 of the sub-electrodes 241 to 249 of the electrostatic chuck 24 have a comb-tooth shape. However, the present invention is not limited to this, and the present invention is not limited thereto. It can have a variety of shapes as long as it can generate an attractive force.

  The electrostatic chuck 24 of the present embodiment has a plurality of suction portions corresponding to a plurality of sub-electrode portions. For example, as shown in FIG. 3C, the electrostatic chuck 24 of the present embodiment has nine suction portions corresponding to the nine sub-electrode portions 241 to 249, but the number of suction portions is not limited thereto. Other numbers of suction units may be provided. For example, in order to more precisely control the suction of the substrate S, a larger number of suction portions may be provided.

  The suction unit is provided so as to be divided in the longitudinal direction (Y-axis direction) and the short direction (X-axis direction) of the electrostatic chuck 24, but is not limited thereto. It may be divided only in the hand direction. The plurality of suction units may be realized by physically having one plate having a plurality of electrode units, and each of the physically divided plates having one or more electrode units. May be realized.

  For example, in the embodiment shown in FIG. 3C, a configuration may be such that each of the plurality of suction portions corresponds to each of the plurality of sub-electrode portions, or a configuration in which one suction portion includes the plurality of sub-electrode portions.

In other words, by controlling the application of the voltage to the sub-electrodes 241 to 249 by the voltage controller 32, the substrate S is arranged in a direction (Y direction) that intersects with the suction progress direction (X direction) of the substrate S, as described later. The three sub-electrodes 241, 244, and 247 can form one suction unit. That is, the three sub-electrodes 241, 244, 247 can be independently controlled in voltage, but by controlling the three electrodes 241, 244, 247 to apply a voltage simultaneously, These three electrode parts 241, 244, 247 can function as one suction part. The specific physical structure and electric circuit structure can be arbitrarily configured as long as each of the plurality of suction portions can independently suction the substrate.

<Adsorption and separation method and voltage control by electrostatic chuck system>
Hereinafter, a process of attracting and separating the substrate S and the mask M to and from the electrostatic chuck 24 and voltage control thereof will be described with reference to FIGS.

(Adsorption of substrate S)
FIG. 4 illustrates a process of adsorbing the substrate S on the electrostatic chuck 24. In the present embodiment, as shown in FIG. 4, the entire surface of the substrate S is not simultaneously attracted to the lower surface of the electrostatic chuck 24, but along the first side (short side) of the electrostatic chuck 24. Adsorption proceeds sequentially from one end to the other. However, the present invention is not limited to this, and for example, the suction of the substrate may proceed from one diagonal corner of the electrostatic chuck 24 to another opposite corner. Further, the substrate may be attracted from the central portion of the electrostatic chuck 24 toward the peripheral portion.

  An arbitrary method may be employed to cause the substrate S to be sequentially sucked along the first side of the electrostatic chuck 24. For example, the order in which the first voltage for substrate adsorption is applied to the plurality of sub-electrode units 241 to 249 may be controlled. Further, the first voltage is applied to the plurality of sub-electrodes 241 to 249 at the same time, but the structure and the supporting force of the supporting portion of the substrate supporting unit 22 that supports the substrate S may be different.

  FIG. 4 shows an embodiment in which the substrate S is sequentially attracted to the electrostatic chuck 24 by controlling the voltage applied to the plurality of sub-electrode portions 241 to 249 of the electrostatic chuck 24. Here, three sub-electrodes 241, 244, and 247 arranged along the long side direction (Y direction) of the electrostatic chuck 24 form the first suction unit 41, and the three sub-electrodes 241 at the center of the electrostatic chuck 24. The following description is based on the premise that one sub-electrode portion 242, 245, 248 forms the second suction portion 42 and the remaining three sub-electrode portions 243, 246, 249 form the third suction portion 43.

  First, the substrate S is carried into the vacuum chamber 21 of the film forming apparatus 11 and is placed on the support of the substrate support unit 22.

Subsequently, the electrostatic chuck 24 descends and moves toward the substrate S placed on the support of the substrate support unit 22 (FIG. 4A).
When the electrostatic chuck 24 is sufficiently close to or in contact with the substrate S, the voltage control unit 32 moves from the first suction unit 41 to the third suction unit 43 along the first side (short side) of the electrostatic chuck 24. Control is performed so that the first voltage (V1) is sequentially applied.

  That is, the first voltage (V1) is first applied to the first suction unit 41 (FIG. 4B), then the first voltage (V1) is applied to the second suction unit 42 (FIG. 4C), and finally the first voltage (V1) is applied. Control is performed so that the first voltage (V1) is applied to the three suction units 43 (FIG. 4D).

  The first voltage (V1) is set to a voltage large enough to securely hold the substrate S on the electrostatic chuck 24.

  Thereby, the suction of the substrate S to the electrostatic chuck 24 proceeds from the side corresponding to the first suction portion 41 of the substrate S to the third suction portion 43 through the central portion of the substrate S. With such control (that is, the suction of the substrate S proceeds in the X direction), the substrate S is flatly sucked by the electrostatic chuck 24 without leaving wrinkles in the center of the substrate.

  In the present embodiment, it has been described that the first voltage (V1) is applied in a state where the electrostatic chuck 24 is sufficiently close to or in contact with the substrate S. However, before the electrostatic chuck 24 starts descending toward the substrate S, Alternatively, the first voltage (V1) may be applied during the lowering.

  At a predetermined point in time after the step of attracting the substrate S to the electrostatic chuck 24 is completed, the voltage control unit 32 reduces the voltage applied to the electrode unit of the electrostatic chuck 24 to the first voltage, as shown in FIG. The first voltage (V1) is reduced to a second voltage (V2) smaller than the first voltage (V1).

  The second voltage (V2) is a suction maintaining voltage for maintaining the substrate S in a state of being held by the electrostatic chuck 24, and is the first voltage (V1) applied when the substrate S is held by the electrostatic chuck 24. ) Lower voltage. When the voltage applied to the electrostatic chuck 24 decreases to the second voltage (V2), the amount of polarization charge induced in the substrate S correspondingly decreases as compared with the case where the first voltage (V1) is applied. I do. However, once the substrate S is once attracted to the electrostatic chuck 24 by the first voltage (V1), the substrate is maintained in the attracted state even when the second voltage (V2) lower than the first voltage (V1) is applied. be able to.

  As described above, by reducing the voltage applied to the electrode portion of the electrostatic chuck 24 to the second voltage (V2), the time required to separate the substrate from the electrostatic chuck 24 can be reduced. That is, when the substrate S is to be separated from the electrostatic chuck 24, even if the voltage applied to the electrode portion of the electrostatic chuck 24 is set to zero (0), the electrostatic force between the electrostatic chuck 24 and the substrate S is immediately increased. It takes a considerable time (in some cases, about several minutes) for the charge induced at the interface between the electrostatic chuck 24 and the substrate S to disappear, instead of the attraction disappearing. In particular, when the substrate S is attracted to the electrostatic chuck 24, usually, in order to ensure that the substrate S is attracted, the minimum electrostatic attraction (Fth) required for attracting the substrate to the electrostatic chuck 24 is sufficient. The first voltage (for example, Vmax shown in FIG. 5) is set so that a large electrostatic attraction acts, but it takes a considerable time until the substrate can be separated from such a first voltage. .

  Therefore, in the present embodiment, in order to prevent the overall process time (Tact) from increasing due to the time required to separate the substrate S from the electrostatic chuck 24, the substrate S is placed on the electrostatic chuck 24. Then, at a predetermined time, the voltage applied to the electrostatic chuck 24 is reduced to the second voltage (V2).

  In the illustrated embodiment, the voltage applied to the first suction part 41 to the third suction part 43 of the electrostatic chuck 24 is simultaneously reduced to the second voltage (V2). However, the present invention is not limited to this. Instead, the timing at which the voltage is reduced to the second voltage (V2) and the magnitude of the applied second voltage (V2) may be different for each suction unit. For example, the voltage may be sequentially reduced from the first suction unit 41 to the third suction unit 43 to the second voltage (V2).

  As described above, after the voltage applied to the electrode portion of the electrostatic chuck 24 decreases to the second voltage (V2), the substrate S adsorbed on the electrostatic chuck 24 and the mask M mounted on the mask support unit 23 Adjust (align) the relative position of. In the present embodiment, it has been described that the relative position adjustment (alignment) between the substrate S and the mask M is performed after the voltage applied to the electrode portion of the electrostatic chuck 24 decreases to the second voltage (V2). The present invention is not limited to this, and the alignment step may be performed in a state where the first voltage (V1) is applied to the electrode portion of the electrostatic chuck 24.

(Adsorption of mask M)
When the suction of the substrate S and the alignment adjustment between the substrate S and the mask M are completed, the mask M is further sucked to the electrostatic chuck 24 via the sucked substrate S. Specifically, the mask M is attracted to the electrostatic chuck 24 via the substrate S by applying a third voltage (V3) for attracting the mask M to the electrode portion of the electrostatic chuck 24. That is, the mask M is attracted to the lower surface of the substrate S that is attracted to the electrostatic chuck 24.

FIG. 5 shows a process of causing the electrostatic chuck 24 to adsorb the mask M.
First, the electrostatic chuck 24 on which the substrate S is attracted is lowered toward the mask M by the electrostatic chuck Z actuator 28 (FIG. 5A).

  When the lower surface of the substrate S attracted to the electrostatic chuck 24 is sufficiently close to or in contact with the mask M, the voltage control unit 32 causes the voltage application unit 31 to apply the third voltage (V3) to the electrode unit of the electrostatic chuck 24. Control.

  The third voltage (V3) is preferably higher than the second voltage (V2) and is large enough to charge the mask M via the substrate S by electrostatic induction. Thereby, the mask M can be attracted to the electrostatic chuck 24 via the substrate S. However, the present invention is not limited to this, and the third voltage (V3) may have the same magnitude as the second voltage (V2). Even if the third voltage (V3) has the same magnitude as the second voltage (V2), as described above, the relative position between the electrostatic chuck 24 or the substrate S and the mask M is reduced by the lowering of the electrostatic chuck 24. Since the distance is reduced, it is possible to cause electrostatic induction on the mask M by the polarized charges induced on the substrate without increasing the magnitude of the voltage applied to the electrode portion of the electrostatic chuck 24. Thus, an attraction force that allows the mask M to be attracted to the electrostatic chuck 24 via the substrate is obtained.

  The third voltage (V3) may be lower than the first voltage (V1), or may be as high as the first voltage (V1) in consideration of shortening of the process time (Tact).

  In the mask suction step illustrated in FIG. 5, the voltage control unit 32 simultaneously applies the third voltage (V3) over the entire electrostatic chuck 24 so that the mask M can be attracted to the lower surface of the substrate S without leaving wrinkles. Instead, the voltage is applied sequentially from the first suction unit 41 to the third suction unit 43 along the first side.

That is, the third voltage (V3) is applied first to the first suction unit 41 (FIG. 5B), and then the third voltage (V3) is applied to the second suction unit 42 (FIG. 5C). Control is performed so that the third voltage (V3) is applied to the third suction unit 43 (FIG. 5D).
Accordingly, the suction of the mask M onto the electrostatic chuck 24 proceeds from the side corresponding to the first suction portion 41 of the mask M to the third suction portion 43 through the central portion of the mask M (that is, the suction side). The suction of the mask M proceeds in the X direction). As a result, the mask M is flatly attracted to the electrostatic chuck 24 without leaving wrinkles in the center of the mask M.

  In the present embodiment, it has been described that the third voltage (V3) is applied in a state where the electrostatic chuck 24 is close to or in contact with the mask M, but before the electrostatic chuck 24 starts descending toward the mask M, or Alternatively, the third voltage (V3) may be applied during the lowering.

  At a predetermined point in time after the step of attracting the mask M to the electrostatic chuck 24 is completed, the voltage control unit 32 reduces the voltage applied to the electrode unit of the electrostatic chuck 24 to the first voltage as shown in FIG. The third voltage (V3) is reduced to a fourth voltage (V4) smaller than the third voltage (V3).

The fourth voltage (V4) is a suction maintaining voltage for maintaining the suction state of the mask M sucked to the electrostatic chuck 24 via the substrate S, and is the fourth voltage when the mask M is sucked to the electrostatic chuck 24. 3 (V3). When the voltage applied to the electrostatic chuck 24 decreases to the fourth voltage (V4), the amount of polarization charge induced in the mask M corresponding to the fourth voltage (V3) also decreases.
) Is reduced as compared with the case where the third voltage (V3) is applied, but after the mask M is once attracted to the electrostatic chuck 24 by the third voltage (V3), the fourth voltage (V4) lower than the third voltage (V3) is applied. The suction state of the mask can be maintained even when the voltage is applied.

As described above, by reducing the voltage applied to the electrode portion of the electrostatic chuck 24 to the fourth voltage (V4), the time required to separate the mask M from the electrostatic chuck 24 can be reduced.
That is, when the mask M is separated from the electrostatic chuck 24, even if the voltage applied to the electrode portion of the electrostatic chuck 24 is set to zero (0), the electrostatic force between the electrostatic chuck 24 and the mask M is immediately increased. It takes a considerable time (in some cases, about several minutes) for the charges induced at the interface between the substrate S and the mask M to disappear, instead of the attraction disappearing. In particular, when the mask M is attracted to the electrostatic chuck 24, normally, a sufficiently large voltage is applied in order to secure the attraction and to shorten the time required for the attraction. It takes a considerable amount of time until the separation becomes possible.

  In this embodiment, in order to prevent the overall process time (Tact) from increasing due to the time required to separate the mask M from the electrostatic chuck 24, the mask M is attached to the electrostatic chuck 24. After the suction, at a predetermined time, the voltage applied to the electrostatic chuck 24 is reduced to a fourth voltage (V4).

  In the illustrated embodiment, the voltage applied to the first suction part 41 to the third suction part 43 of the electrostatic chuck 24 is simultaneously reduced to the fourth voltage (V4), but the present invention is not limited to this. Alternatively, the point of time when the voltage is lowered to the fourth voltage (V4) and the magnitude of the fourth voltage (V4) to be applied may be different for each suction unit. For example, the voltage may be sequentially reduced to the fourth voltage (V4) from the first suction unit 41 to the third suction unit 43.

  In this manner, in a state where the mask M is attracted to the electrostatic chuck 24 via the substrate S, a film forming process in which the evaporation material evaporated from the evaporation source 25 is formed on the substrate S via the mask M is performed. Will be In this embodiment, the mask M is held by the electrostatic chucking force of the electrostatic chuck 24. However, the present invention is not limited to this. By applying a magnetic force to the metal mask M, the mask M may be more securely brought into close contact with the substrate S.

(Separation of substrate S and mask M from electrostatic chuck 24)
When the film forming process is completed in a state where the substrate S and the mask M are attracted to the electrostatic chuck 24, the attracted substrate S and the mask M are separated from the electrostatic chuck 24 through voltage control applied to the electrostatic chuck 24. .

FIG. 6 shows a step of separating the substrate S and the mask M from the electrostatic chuck 24.
As shown in FIG. 6A, the voltage control unit 32 separates the voltage applied to the electrode unit of the electrostatic chuck 24 from the above-described fourth voltage (V4), which is the suction maintaining voltage, by simultaneously separating the mask M and the substrate S. Is changed to the fifth voltage (V5) that can be used. Here, the fifth voltage (V5) is applied to both the substrate S directly adsorbed on the adsorption surface of the electrostatic chuck 24 and the mask M adsorbed via the substrate S from the electrostatic chuck 24 at the same time. It is a separation voltage for separation. Therefore, the fifth voltage (V5) is the suction voltage (first voltage V1, third voltage V3) applied when the substrate S and the mask M are respectively sucked to the electrostatic chuck 24, and the fifth voltage (V5). The voltage is lower than the suction maintaining voltage (second voltage V2, fourth voltage V4) applied for maintaining suction. For example, the voltage control unit 32 applies a zero (0) voltage (that is, turns off) to the electrode unit of the electrostatic chuck 24 as a fifth voltage (V5), or has a polarity opposite to that of the voltage at the time of suction. The voltage can be applied as a fifth voltage (V5). As a result, the polarization charges induced on the mask M and the substrate S are removed, and the mask M and the substrate S are simultaneously separated from the electrostatic chuck 24.

  As described above, in the configuration according to the embodiment of the present invention, when the substrate S and the mask M are separated from the suction surface of the electrostatic chuck 24, the substrate S and the mask M are guided by the two objects to be suctioned (the substrate S and the mask M). By applying a sufficiently low separation voltage (V5; zero voltage or voltage of opposite polarity) to the electrostatic chuck 24 that can remove all polarization charges together, the two chucks ( The substrate S and the mask M) are separated from each other.

  According to such a configuration, when being separated from the suction surface of the electrostatic chuck 24, the substrate S, which is an insulating object to be sucked, and the mask M, which is an object to be sucked, which is usually made of a metal material, They are separated while maintaining mutual contact. Therefore, when removing the polarized charges induced in each of the objects to be attracted by applying the separation voltage (V5), the polarized charges on the mask M side are removed via the grounded mask support unit 23 and the insulating property is reduced. The polarization charge on the substrate S side, which is the object to be adsorbed, is also quickly removed through the metallic mask M that maintains the contact state. Therefore, the two objects to be attracted can be separated from the electrostatic chuck 24 more quickly.

  Although not shown in detail, in the step of FIG. 6A in which the voltage applied to the electrostatic chuck 24 is reduced to the fifth voltage (V5), which is the separation voltage, the fifth voltage It is preferable to control so as to make the time point of lowering to (V5) different. In particular, as described above, in the step of respectively adsorbing the substrate S and the mask M, when the adsorption voltages (V1, V3) are sequentially applied from the first adsorption section 41 to the third adsorption section 43, respectively, and the adsorption is performed. (See FIGS. 4B to 4D and FIGS. 5B to 5D). Similarly, when the substrate S and the mask M are simultaneously separated, the separation voltage is sequentially increased from the first suction unit 41 to the third suction unit 43. It is preferable to control so as to apply the fifth voltage (V5).

  That is, control is performed such that the separation voltage is applied first to the region where the attraction voltage is applied first. This is because, in the area of the object to be attracted (substrate S and mask M) corresponding to the electrostatic chuck electrode portion (the first attracting portion 41 in the above-described example) to which the attracting voltage has been applied earlier, the attracting voltage is later applied. Since the period during which the electrostatic chuck 24 is held by the electrostatic chuck 24 is longer than that of the to-be-adsorbed body area corresponding to the applied electrostatic chuck electrode section (the third suction section 43 in the above-described example), the remaining polarization charge amount is reduced. This is because the size is also large.

  In the embodiment according to the present invention, the electrostatic chuck is controlled such that the separation voltage (V5) is sequentially applied from the region where the adsorption period is long and the polarization charge amount is large as described above. It is possible to further shorten the time from when the target object 24 (the substrate S and the mask M) is completely separated. In addition, by sequentially expanding the region to which the separation voltage (V5) is applied from the region where the amount of polarization charge due to the adsorption is large, the adsorption surface of the electrostatic chuck 24 is moved from the adsorption surface to the adsorption target ( The timing at which the substrate S and the mask M) are separated can be made uniform within the suction surface.

On the other hand, as described above, in addition to the control for changing the time point at which the voltage is lowered to the fifth voltage (V5) for each suction portion of the electrostatic chuck 24, the control for changing the magnitude of the applied fifth voltage (V5) for each suction portion is also performed. May go. That is, in the case of the above-described example, a larger separation voltage (V5) is applied to the electrostatic chuck electrode portion (the first suction portion 41) to which the suction voltage has been applied first (the voltage is applied so that the potential difference becomes relatively large). Then, control is performed so that a smaller separation voltage (V5) is applied to the electrostatic chuck electrode portion (third suction portion 43) to which the suction voltage is applied later (voltage is applied so that the potential difference is relatively small). May be. As described above, the magnitude of the fifth voltage (V5) applied as the separation voltage is set within the range of the voltage that allows simultaneous separation of the substrate and the mask, according to the order in which the suction voltage is applied. The same effect can be obtained even if the control is made to be different.

  In the above, an example has been described in which the time and magnitude of application of the fifth voltage (V5), which is the separation voltage, are controlled so as to be different for each adsorption region, but the present invention is not limited to this. That is, as described above, the present invention provides a sufficiently low separation voltage (V5; zero voltage) that can remove both polarization charges induced by the two adsorbents (substrate S and mask M). Alternatively, by applying a voltage having a polarity opposite to the chucking voltage to the electrostatic chuck 24, the two objects (the substrate S and the mask M) are separated from the electrostatic chuck 24. I have. As long as such a configuration is adopted, when the separation voltage (V5) is applied to the plurality of suction areas of the electrostatic chuck 24, the voltages applied to the first suction section 41 to the third suction section 43 are simultaneously changed to the fifth voltage (V5). V5).

  Returning to FIG. 6, the description will be continued. As described above, when the substrate S and the mask M are separated from the electrostatic chuck 24 while maintaining contact, and placed on the substrate support unit 22 and the mask support unit 23, the electrostatic chuck Z actuator 28 statically operates. The separation step is completed by raising the electric chuck 24 and then raising the substrate support unit 22 by the substrate Z actuator 26 to separate the substrate S from the mask M (FIG. 6B).

  Hereinafter, with reference to FIG. 7, the control of the voltage applied to the electrode portion or the sub-electrode portion of the electrostatic chuck 24 in the process of holding the substrate S and the mask M by suction by the electrostatic chuck 24 will be described.

First, in order to attract the substrate S to the electrostatic chuck 24, a first voltage (V1) is applied to an electrode portion or a sub-electrode portion of the electrostatic chuck 24 at a predetermined time (t1).
The first voltage (V1) is large enough to obtain an electrostatic attraction force enough to attract the substrate S to the electrostatic chuck 24, and the first voltage (V1) is applied to the electrode portion or the sub-electrode portion of the electrostatic chuck 24. It is preferable that the voltage be as large as possible in order to reduce the time required from the application of the magnetic field to the generation of polarization charges on the substrate S. For example, it is preferable to apply the maximum voltage (Vmax) that can be applied by the voltage application unit 31.

  Subsequently, a polarization charge is induced on the substrate S by the applied first voltage, and after the substrate S is attracted to the electrostatic chuck 24 with a sufficient electrostatic attraction force (t = t2), the electrode of the electrostatic chuck 24 is turned off. The voltage applied to the section or the sub-electrode section is reduced to the second voltage (V2). The second voltage (V2) may be, for example, the lowest voltage (Vmin) that can maintain the state in which the substrate S is attracted to the electrostatic chuck 24.

  Subsequently, in order to attract the mask M to the electrostatic chuck 24 via the substrate S, the voltage applied to the electrode portion or the sub-electrode portion of the electrostatic chuck 24 is increased to a third voltage (V3) (t = t3 ). The third voltage (V3) is a voltage for attracting the mask M to the electrostatic chuck 24 via the substrate S, and is therefore preferably higher than the second voltage (V2). More preferably, the voltage is the maximum voltage (Vmax) that can be applied by the application unit 31.

  In the present embodiment, in order to reduce the time required to separate the substrate S and the mask M from the electrostatic chuck 24 after the film forming process, the voltage applied to the electrode portion or the sub-electrode portion of the electrostatic chuck 24 is changed to the first voltage. The voltage is not maintained at the third voltage (V3), but is reduced to a smaller fourth voltage (V4) (t = t4). However, in order to maintain the state in which the mask M is attracted to the electrostatic chuck 24 via the substrate S, the fourth voltage (V4) is required to maintain the state in which only the substrate S is attracted to the electrostatic chuck 24. The voltage is preferably higher than the required second voltage (V2).

After the film formation process is completed (t5), in order to separate the substrate S and the mask M from the electrostatic chuck 24, the voltage applied to the electrode portion of the electrostatic chuck 24 is changed to a fifth voltage (a separation voltage). V5). That is, the voltage applied to the electrode portion of the electrostatic chuck 24 is reduced to zero (0) (that is, turned off), or a voltage having the opposite polarity to the voltage at the time of suction is applied. As a result, the polarization charges induced in the substrate S and the mask M are removed, and the substrate S and the mask M are separated from the electrostatic chuck 24 while maintaining mutual contact. Subsequently, the separation step from the electrostatic chuck 24 is completed by raising the substrate support unit 22 and separating the substrate S from the mask M.

<Deposition process>
Hereinafter, a film forming method employing voltage control of the electrostatic chuck according to the present embodiment will be described.
With the mask M placed on the mask support unit 23 in the vacuum chamber 21, the substrate is carried into the vacuum chamber 21 of the film forming apparatus 11 by the transfer robot 14 in the transfer chamber 13.

  The hand of the transport robot 14 that has entered the vacuum vessel 21 descends, and places the substrate S on the support of the substrate support unit 22.

  Subsequently, after the electrostatic chuck 24 descends toward the substrate S and sufficiently approaches or contacts the substrate S, the first voltage (V1) is applied to the electrostatic chuck 24 to attract the substrate S.

  In one embodiment of the present invention, in order to maximize the time required to separate the substrate from the electrostatic chuck 24, after the substrate has been attracted to the electrostatic chuck 24, the electrostatic chuck 24 is removed. Is reduced from the first voltage (V1) to the second voltage (V2). Even if the voltage applied to the electrostatic chuck 24 is reduced to the second voltage (V2), it takes time for the polarized charges induced on the substrate to be discharged by the first voltage (V1). The attraction force to the substrate by the electric chuck 24 can be maintained. Therefore, the magnitude and the application time of the second voltage (V2) are set to values within a range in which substrate adsorption can be maintained until film formation is completed.

  In a state where the substrate S is attracted to the electrostatic chuck 24, the substrate S is lowered toward the mask M in order to measure a relative displacement of the substrate S with respect to the mask M. In another embodiment of the present invention, the lowering process of the substrate is completed in order to surely prevent the substrate from falling off the electrostatic chuck 24 during the lowering process of the substrate sucked on the electrostatic chuck 24. Later (that is, immediately before an alignment step described later starts), the voltage applied to the electrostatic chuck 24 is reduced to the second voltage (V2).

  When the substrate S is lowered to the measurement position, the alignment camera 20 captures images of the alignment marks formed on the substrate S and the mask M, and measures the relative displacement between the substrate and the mask. In another embodiment of the present invention, after the measurement process for alignment is completed (during the alignment process), the position of the electrostatic chuck 24 is increased to improve the accuracy of the measurement process of the relative position between the substrate and the mask. Voltage to a second voltage. That is, the alignment mark between the substrate and the mask in a state where the substrate is strongly attracted to the electrostatic chuck 24 by the first voltage (V1) (in a state where the substrate is kept more flat) is photographed, thereby improving the accuracy of the measurement process. Can be raised.

As a result of the measurement, when it is determined that the relative displacement of the substrate with respect to the mask exceeds the threshold, the substrate S in a state of being attracted to the electrostatic chuck 24 is moved in the X direction, the Y direction, and rotated by θ, and the substrate is rotated. Position adjustment (alignment) with respect to the mask. In another embodiment of the present invention, the voltage applied to the electrostatic chuck 24 is reduced to the second voltage (V2) after such a position adjustment process is completed. As described above, the substrate is reliably held by applying the relatively high first voltage (V1) during the alignment, and then the voltage is reduced to the second voltage (V2). Thereby, accuracy can be further improved over the entire alignment process (relative position measurement and position adjustment).

  After the alignment step, the mask M is attracted to the electrostatic chuck 24 via the substrate S. Therefore, a third voltage (V3) higher than the second voltage is applied to the electrode portion or the sub-electrode portion of the electrostatic chuck 24.

  After the mask M suction step is completed, the voltage applied to the electrode portion or the sub-electrode portion of the electrostatic chuck 24 is a voltage capable of maintaining a state where the substrate and the mask are sucked to the electrostatic chuck 24. , To the fourth voltage (V4). Thus, the time required to separate the substrate S and the mask M from the electrostatic chuck 24 after the completion of the film forming process can be reduced.

  Subsequently, the shutter of the evaporation source 25 is opened, and the evaporation material is evaporated on the substrate S via the mask. After depositing the deposition material to a desired thickness, the voltage applied to the electrode portion or the sub-electrode portion of the electrostatic chuck 24 is reduced to a fifth voltage (V5; zero (0) or a voltage of the opposite polarity), The substrate S and the mask M are separated from the electric chuck 24. Subsequently, after the substrate S is separated from the mask M and lifted to the unloading position, the substrate S is unloaded outside the vacuum vessel 21 by the hand of the transfer robot 14 that has entered the film forming apparatus 11.

<Electronic device manufacturing method>
Next, an example of a method for manufacturing an electronic device using the film forming apparatus of the present embodiment will be described. Hereinafter, a configuration and a manufacturing method of an organic EL display device will be described as an example of an electronic device.

  First, an organic EL display device to be manufactured will be described. FIG. 8A shows an overall view of the organic EL display device 60, and FIG. 8B shows a cross-sectional structure of one pixel.

  As shown in FIG. 8A, in a display area 61 of the organic EL display device 60, a plurality of pixels 62 having a plurality of light emitting elements are arranged in a matrix. Although details will be described later, each of the light-emitting elements has a structure including an organic layer sandwiched between a pair of electrodes. Here, the pixel refers to a minimum unit capable of displaying a desired color in the display area 61. In the case of the organic EL display device according to the present embodiment, the pixel 62 is configured by a combination of the first light emitting element 62R, the second light emitting element 62G, and the third light emitting element 62B that emit light different from each other. The pixel 62 is often formed of a combination of a red light emitting element, a green light emitting element, and a blue light emitting element, but may be a combination of a yellow light emitting element, a cyan light emitting element, and a white light emitting element. There is no restriction.

  FIG. 8B is a schematic partial cross-sectional view taken along a line AB in FIG. 8A. The pixel 62 includes, on a substrate 63, an organic EL element including an anode 64, a hole transport layer 65, one of light-emitting layers 66R, 66G, and 66B, an electron transport layer 67, and a cathode 68. I have. Among these, the hole transport layer 65, the light emitting layers 66R, 66G, 66B, and the electron transport layer 67 correspond to the organic layers. In the present embodiment, the light emitting layer 66R is an organic EL layer emitting red light, the light emitting layer 66G is an organic EL layer emitting green light, and the light emitting layer 66B is an organic EL layer emitting blue light. The light-emitting layers 66R, 66G, and 66B are formed in patterns corresponding to light-emitting elements that emit red, green, and blue light, respectively (sometimes referred to as organic EL elements). The anode 64 is formed separately for each light emitting element. The hole transport layer 65, the electron transport layer 67, and the cathode 68 may be formed in common with the plurality of light emitting elements 62R, 62G, 62B, or may be formed for each light emitting element. Note that an insulating layer 69 is provided between the anodes 64 to prevent the anode 64 and the cathode 68 from being short-circuited by foreign matter. Further, since the organic EL layer is deteriorated by moisture or oxygen, a protective layer 70 for protecting the organic EL element from moisture or oxygen is provided.

  In FIG. 8B, the hole transport layer 65 and the electron transport layer 67 are shown as one layer. However, depending on the structure of the organic EL display element, the hole transport layer 65 and the electron transport layer 67 are formed of a plurality of layers including a hole block layer and an electron block layer. May be done. Further, a hole injection layer having an energy band structure capable of smoothly injecting holes from the anode 64 to the hole transport layer 65 is provided between the anode 64 and the hole transport layer 65. It can also be formed. Similarly, an electron injection layer may be formed between the cathode 68 and the electron transport layer 67.

Next, an example of a method for manufacturing an organic EL display device will be specifically described.
First, a substrate (not shown) for driving an organic EL display device and a substrate 63 on which an anode 64 is formed are prepared.

  An acrylic resin is formed on the substrate 63 on which the anode 64 is formed by spin coating, and the acrylic resin is patterned by lithography so that an opening is formed at a portion where the anode 64 is formed, thereby forming an insulating layer 69. I do. This opening corresponds to a light emitting area where the light emitting element actually emits light.

  The substrate 63 on which the insulating layer 69 has been patterned is carried into the first organic material film forming apparatus, the substrate is held by the substrate holding unit and the electrostatic chuck, and the hole transport layer 65 is placed on the anode 64 in the display area. Is formed as a common layer. The hole transport layer 65 is formed by vacuum evaporation. Actually, since the hole transport layer 65 is formed in a size larger than the display area 61, a high-definition mask is unnecessary.

  Next, the substrate 63 on which the hole transport layer 65 is formed is carried into the second organic material film forming apparatus, and is held by the substrate holding unit and the electrostatic chuck. The alignment between the substrate and the mask is performed, the substrate is placed on the mask, and a red light emitting layer 66R is formed on a portion of the substrate 63 where the red light emitting element is arranged.

  Similarly to the formation of the light emitting layer 66R, the third organic material film forming apparatus forms the green light emitting layer 66G, and the fourth organic material film forming apparatus forms the blue light emitting layer 66B. . After the formation of the light emitting layers 66R, 66G, and 66B is completed, the electron transport layer 67 is formed on the entire display area 61 by the fifth film forming apparatus. The electron transport layer 67 is formed as a layer common to the three color light emitting layers 66R, 66G, and 66B.

The substrate formed up to the electron transport layer 67 is moved by a metal deposition material film forming apparatus to form a cathode 68. The above-described film forming apparatus 11 can be used as a first organic material film forming apparatus to a fourth organic material film forming apparatus or a metal vapor deposition material film forming apparatus.
In the film forming process according to the present invention, after the substrate and the mask are attracted to the electrostatic chuck 24, the voltage applied to the electrostatic chuck 24 at a predetermined time is reduced in advance. When the substrate and the mask are separated from the electrostatic chuck after the completion of the film forming process, a voltage of zero (0) (that is, turned off) or a voltage having the opposite polarity to the voltage at the time of suction is used as a separation voltage. Apply. As a result, the substrate and the mask are simultaneously separated from the electrostatic chuck 24 while maintaining mutual contact. As a result, the time required to separate the substrate and the mask from the electrostatic chuck 24 can be reduced, and the process time can be reduced.

  Thereafter, the substrate is moved to a plasma CVD apparatus to form the protective layer 70, and the organic EL display device 60 is completed.

If the substrate 63 on which the insulating layer 69 is patterned is carried into a film forming apparatus and is exposed to an atmosphere containing moisture and oxygen until the film formation of the protective layer 70 is completed, the light emitting layer made of the organic EL material becomes It may be deteriorated by moisture or oxygen. Therefore, in this example, the loading and unloading of the substrate between the film forming apparatuses is performed in a vacuum atmosphere or an inert gas atmosphere.

  The above embodiment is an example of the present invention, and the present invention is not limited to the configuration of the above embodiment, and may be appropriately modified within the scope of the technical idea.

1: Cluster device 11: Film forming device 12: Mask stock device 13: Transfer chamber 14: Transfer robot 20: Alignment camera 21: Vacuum container 22: Substrate support unit 23: Mask support unit 24: Electrostatic chuck 25: Evaporation source 28: electrostatic chuck Z actuator 29: position adjusting mechanism 30: electrostatic chuck system 31: voltage applying unit 32: voltage control unit 33: electrode pairs 41 to 43: first to third suction units 241 to 249: sub Electrode section 331: first electrode 332: second electrode

Claims (11)

An electrostatic chuck including an electrode part,
A voltage control unit for controlling a voltage applied to the electrode unit of the electrostatic chuck,
Including
When a first object to be adsorbed is adsorbed to the electrode portion of the electrostatic chuck, and a second object to be adsorbed is adsorbed to the electrode portion of the electrostatic chuck via the first object to be adsorbed, The electrostatic chuck system, wherein the voltage control unit applies a separation voltage for separating the first adsorbed body and the second adsorbed body that are in contact with each other from the electrostatic chuck. The first adsorbent is a substrate made of an insulating material,
The electrostatic chuck system according to claim 1, wherein the second object is a mask made of a metallic material. 3. The electrostatic chuck system according to claim 1, wherein, when the separation voltage is applied to the electrode unit, the second object is supported by a grounded support unit. 4. The separation voltage may be a zero (0) voltage or a voltage having a polarity opposite to that of a suction voltage when the first chuck and the second chuck are chucked to the electrostatic chuck. Item 4. The electrostatic chuck system according to any one of Items 1 to 3. A film forming apparatus for forming a film on a substrate via a mask,
An electrostatic chuck system for adsorbing a substrate that is a first object to be adsorbed and a mask that is a second object to be adsorbed,
The film forming apparatus according to claim 1, wherein the electrostatic chuck system is the electrostatic chuck system according to claim 1. A separation method for separating, from an electrode portion of the electrostatic chuck, an object to be attracted adsorbed to the electrode portion,
When the first object to be attracted is attracted to the electrode portion of the electrostatic chuck, and the second object to be attracted is attracted to the electrode portion of the electrostatic chuck via the first object to be attracted, Applying a separation voltage for separating the contacted first and second suction members from the electrostatic chuck together;
After the step of applying the voltage, a step of moving a supporting means for supporting the first object to be adsorbed to separate the first object to be adsorbed from the second object to be adsorbed;
A separation method comprising: The first adsorbent is a substrate made of an insulating material,
The separation method according to claim 6, wherein the second object is a mask made of a metallic material. 8. The separation method according to claim 6, wherein when the separation voltage is applied to the electrode unit, the second object is supported by a grounded support unit. 9. The separation voltage is a voltage of zero (0) or a voltage having a polarity opposite to that of a chucking voltage when the first chuck and the second chuck are chucked to the electrostatic chuck. The separation method according to any one of claims 6 to 8. A method of forming a deposition material on a substrate via a mask,
Loading a mask into the vacuum vessel;
Loading a substrate into a vacuum vessel;
Applying a first chucking voltage to an electrode portion of the electrostatic chuck to chuck the substrate to the electrostatic chuck;
Applying a second chucking voltage to the electrode unit to chuck the mask on the electrostatic chuck via the substrate;
In a state where the substrate and the mask are attracted to the electrostatic chuck, a vapor deposition material is evaporated, and a film of the vapor deposition material is formed on the substrate through the mask.
A step of separating the mask as a second object and the substrate as a first object from the electrostatic chuck using the separation method according to claim 6. A film forming method comprising: An electronic device manufacturing method, wherein an electronic device is manufactured using the film forming method according to claim 10.

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