JP7007688B2 - Adsorption device, film forming device, adsorption method, film forming method and manufacturing method of electronic device - Google Patents

Description

The present invention relates to an adsorption device, a film forming apparatus, an adsorption method, a film forming method, and a method for manufacturing an electronic device.

Recently, an organic EL display device (organic EL display) has been in the limelight as a flat panel display device. The organic EL display device is a self-luminous display, which is superior to the liquid crystal panel display in characteristics such as response speed, viewing angle, and thinning, and is an existing liquid crystal display in various mobile terminals such as monitors, televisions, and smartphones. It replaces the panel display at a high speed. It is also expanding its application fields to automobile displays and the like.

The organic light emitting element (organic EL element; OLED) constituting the organic EL display device has a basic structure in which an organic substance layer that emits light is formed between two facing electrodes (cathode electrode and anode electrode). For example, in the film forming apparatus, the organic substance layer and the metal electrode layer of the organic light emitting element are formed by forming a film-forming material discharged from a film-forming source in which the film-forming material is housed through a mask in which a pattern based on a pixel pattern is formed. Manufactured by depositing on a substrate.

In the upward vapor deposition method (depot-up) film forming apparatus, the film forming source is provided in the lower part of the vacuum vessel of the film forming apparatus, the substrate is arranged in the upper part of the vacuum vessel, and the film forming material is vapor-deposited on the lower surface of the substrate. .. In the vacuum vessel of such an upward vapor deposition type film forming apparatus, only the peripheral portion of the lower surface of the substrate is held by the substrate holder, so that the substrate bends due to its own weight, which is one of the factors that reduce the vapor deposition accuracy. It has become. Even in a film forming apparatus of a method other than the upward thin-film deposition method, there is a possibility that bending may occur due to the weight of the substrate itself.

As a method for reducing the bending due to the weight of the substrate, a technique using an electrostatic chuck is being studied. That is, the bending of the substrate can be reduced by adsorbing the upper surface of the substrate with an electrostatic chuck over the entire surface.

Patent Document 1 (Korean Patent Publication No. 2007-0010723) proposes a technique for adsorbing a substrate and a mask with an electrostatic chuck.
However, when the mask is adsorbed through the substrate by the electrostatic chuck in this way, after the alignment between the substrate and the mask is completed, both the substrate and the mask are sufficiently adsorbed by the electrostatic chuck, and the two are in close contact with each other. Although it is necessary to increase the degree, it is preferable to prevent the substrate and the mask from contacting each other during the alignment. That is, when the film formation is performed after the alignment is completed, it is preferable that the substrate and the mask are in close contact with each other without a gap in order to improve the film formation accuracy, but contact between the two occurs during the alignment. Then, there is a possibility that the substrate or the mask is damaged, or the film formed on the substrate in the previous step is damaged, and the alignment accuracy is also lowered.

Korean Patent Publication No. 2007-0010723

Therefore, when the mask is attracted through the substrate by the electrostatic chuck, the requirements for alignment (prevention of damage to the substrate / mask and suppression of deterioration of alignment accuracy) and the requirements after alignment (between the substrate and the mask). It is necessary to effectively control the potential applied to the electrostatic chuck so that (improvement of adhesion) can be achieved together, but in the past, this has not been recognized or studied.

The present invention has been made in view of the above problems, so that both the substrate and the mask are sufficiently adsorbed by the electrostatic chuck after alignment, and the substrate adsorbed by the electrostatic chuck does not come into contact with the mask during alignment. The purpose is to provide the technology to make it.

The adsorption device according to the embodiment of the present invention has a first object to be adsorbed, and a first electrode and a first electrode for generating an electrostatic attraction force for adsorbing the second object to be adsorbed by sandwiching the first object to be adsorbed. An electrostatic chuck having two electrodes, a potential applying portion for applying a potential to the first electrode and the second electrode, and applying a potential to the first electrode by the potential applying unit and to the second electrode. The potential control unit is provided with a potential control unit for independently controlling the application of the potential, and the potential control unit has a first electrode on the first electrode in order to generate an electrostatic adsorption force for adsorbing the first object to be adsorbed . After applying a potential and applying a second potential to the second electrode, at least one of the first potential and the second potential is changed, and a third potential is applied to the first electrode to the second electrode. A fourth potential is applied, and the potential difference between the third potential and the fourth potential is the same as the potential difference between the first potential and the second potential, and the sum of the third potential and the fourth potential. The absolute value of is larger than the absolute value of the sum of the first potential and the second potential.

The adsorption device according to another embodiment of the present invention includes a first object to be adsorbed and a first electrode for generating an electrostatic attraction force for adsorbing the second object to be adsorbed by sandwiching the first object to be adsorbed. An electrostatic chuck having a second electrode, a potential applying portion for applying a potential to the first electrode and the second electrode, and applying a potential to the first electrode by the potential applying unit and the second electrode. The potential control unit is provided with a potential control unit for independently controlling the application of the potential to the electrostatic chuck. By changing at least one of the potentials applied to the first electrode and the second electrode from the state where the electrostatic attraction force that the adsorbent is not adsorbed is generated , the effect is exerted on the second object to be adsorbed. The potential applied to the first electrode and the potential applied to the first electrode are changed without changing the potential difference between the potential applied to the first electrode and the potential applied to the second electrode by changing the electrostatic attraction force . It is characterized in that the absolute value of the sum with the potential applied to the two electrodes is increased.

The film forming apparatus according to the embodiment of the present invention is a film forming apparatus for forming a film on a substrate via a mask, and is a substrate which is a first adsorbed body and a second adsorbed body through the substrate. The suction device includes a suction device for sucking a certain mask, and the suction device is one of the suction devices according to the embodiment .

The adsorption method according to the embodiment of the present invention is a method for adsorbing a second object to be adsorbed by sandwiching the first object to be adsorbed and the first object to be adsorbed on an electrostatic chuck having a first electrode and a second electrode. Therefore, the first potential with respect to the ground potential is applied to the first electrode, and the second potential with respect to the ground potential is applied to the second electrode to generate an electrostatic adsorption force , and the second object to be adsorbed is adsorbed. The first adsorption step in which the first object to be adsorbed is adsorbed on the electrostatic chuck, and the third potential with respect to the ground potential is applied to the first electrode and the fourth potential with respect to the ground potential is applied to the second electrode. The potential difference between the third potential and the fourth potential includes a second adsorption step of imparting and adsorbing the second object to be adsorbed to the electrostatic chuck with the first object to be adsorbed sandwiched therein. It is the same as the potential difference between the potential and the second potential, and the absolute value of the sum of the third potential and the fourth potential is larger than the absolute value of the sum of the first potential and the second potential. It is characterized by.

The film-forming method according to the embodiment of the present invention is a film-forming method for forming a film-forming material by sandwiching a substrate and the substrate on an electrostatic chuck having a first electrode and a second electrode and adsorbing the mask. The stage of carrying the mask into the vacuum container, the stage of carrying the substrate into the vacuum container, and the stage of applying the first potential to the ground potential to the first electrode and the second potential to the ground potential to the second electrode. The step of adsorbing the substrate to the electrostatic chuck without adsorbing the mask, and applying the third potential to the ground potential to the first electrode and applying the fourth potential to the ground potential to the second electrode. The film-forming material is released at the stage of adsorbing the mask to the electrostatic chuck with the substrate sandwiched between the two, and with the substrate and the mask adsorbed on the electrostatic chuck, to release the mask. The potential difference between the third potential and the fourth potential is the same as the potential difference between the first potential and the second potential, including the step of forming the film-forming material on the substrate via the above. The absolute value of the sum of the third potential and the fourth potential is larger than the absolute value of the sum of the first potential and the second potential.

According to the present invention, after alignment, both the substrate and the mask can be sufficiently adsorbed by the electrostatic chuck, and the substrate adsorbed by the electrostatic chuck can be prevented from coming into contact with the mask during alignment.

FIG. 1 is a schematic diagram of a part of an electronic device manufacturing apparatus. FIG. 2 is a schematic view of a film forming apparatus according to an embodiment of the present invention. FIG. 3 is a conceptual block diagram of the suction device of the present embodiment. 4 (a) to 4 (c) are schematic end face views showing an example of a method of adsorbing a substrate and a mask to an electrostatic chuck. FIG. 5 is a schematic diagram showing an electronic device.

Hereinafter, preferred embodiments and examples of the present invention will be described with reference to the drawings. However, the following embodiments and examples merely illustrate preferred configurations of the present invention, and the scope of the present invention is not limited to those configurations. Further, unless otherwise specified, the hardware configuration and software configuration, processing flow, manufacturing conditions, dimensions, materials, shapes, etc. of the apparatus in the following description are limited to those of the present invention. It is not the purpose.

The present invention can be applied to an apparatus for depositing various materials on the surface of a substrate to form a film, and can be preferably applied to an apparatus for forming a thin film (material layer) having a desired pattern by vacuum deposition. As the material of the substrate, any material such as glass, a film of a polymer material, and a metal can be selected, and the substrate may be, for example, a substrate in which a film such as polyimide is laminated on a glass substrate. .. Further, as the film forming material, any material such as an organic material and a metallic material (metal, metal oxide, etc.) may be selected. In addition to the vacuum deposition apparatus described in the following description, the present invention can be applied to a film forming apparatus including a sputtering apparatus and a CVD (Chemical Vapor Deposition) apparatus. Specifically, the technique of the present invention can be applied to manufacturing equipment such as organic electronic devices (for example, organic light emitting devices, thin film solar cells), optical members, and the like. Among them, an apparatus for manufacturing an organic light emitting device that forms an organic light emitting device by evaporating a film forming material and depositing it on a substrate via a mask is one of the preferred application examples of the present invention.

<Manufacturing equipment for electronic devices>
FIG. 1 is a plan view schematically showing a configuration of a part of an electronic device manufacturing apparatus.
The manufacturing apparatus of FIG. 1 is used, for example, for manufacturing a display panel of an organic EL display device for a smartphone. In the case of a display panel for smartphones, for example, on a 4.5 generation substrate (about 700 mm x about 900 mm), a 6 generation full size (about 1500 mm x about 1850 mm) or a half cut size (about 1500 mm x about 925 mm) substrate. After forming a film for forming an organic EL element, the substrate is cut out to produce a plurality of small-sized panels.

The electronic device manufacturing device generally includes a plurality of cluster devices 1 and a relay device that connects the cluster devices.
The cluster device 1 includes a plurality of film forming devices 11 for processing (for example, film forming) the substrate S, a plurality of mask stock devices 12 for accommodating masks M before and after use, and a transport chamber 13 arranged in the center thereof. And. As shown in FIG. 1, the transport chamber 13 is connected to each of the plurality of film forming apparatus 11 and the mask stock apparatus 12.

In the transport chamber 13, a transport robot 14 that transports the substrate and the mask is arranged. The transfer robot 14 transfers the substrate S from the path chamber 15 of the relay device arranged on the upstream side to the film forming device 11. Further, the transfer robot 14 transfers the mask M between the film forming apparatus 11 and the mask stock apparatus 12. The transfer robot 14 is, for example, a robot having a structure in which a robot hand for holding a substrate S or a mask M is attached to an articulated arm.

In the film forming apparatus 11 (also referred to as a vapor deposition apparatus), the film forming material stored in the film forming source is heated by a heater and evaporated, and is deposited on the substrate via a mask. A series of film forming processes such as transfer of the substrate S to and from the transfer robot 14, adjustment (alignment) of the relative position between the substrate S and the mask M, fixing of the substrate S on the mask M, and film formation (deposited film) are performed. This is done by device 11.

In the mask stock device 12, a new mask used in the film forming process in the film forming apparatus 11 and a used mask are separately stored in two cassettes. The transfer robot 14 transfers the used mask from the film forming apparatus 11 to the cassette of the mask stock device 12, and conveys a new mask stored in another cassette of the mask stock device 12 to the film forming apparatus 11.

The cluster device 1 includes a path chamber 15 that transmits the board S from the upstream side to the cluster device 1 in the flow direction of the board S, and another board S on the downstream side that has been film-formed by the cluster device 1. A buffer chamber 16 for transmitting to the cluster device is connected. The transfer robot 14 in the transfer chamber 13 receives the substrate S from the path chamber 15 on the upstream side and transfers it to one of the film forming devices 11 (for example, the film forming device 11a) in the cluster device 1. Further, the transfer robot 14 receives the substrate S for which the film forming process in the cluster device 1 has been completed from one of the plurality of film forming devices 11 (for example, the film forming device 11b), and the buffer connected to the downstream side. Transport to room 16.

A swivel chamber 17 for changing the direction of the substrate is installed between the buffer chamber 16 and the pass chamber 15. The swivel chamber 17 is provided with a transfer robot 18 for receiving the substrate S from the buffer chamber 16, rotating the substrate S by 180 °, and transporting the substrate S to the pass chamber 15. As a result, the orientation of the substrate S is the same between the cluster device on the upstream side and the cluster device on the downstream side, and the substrate processing becomes easy.

The pass chamber 15, the buffer chamber 16, and the swivel chamber 17 are so-called relay devices that connect the cluster devices, and the relay devices installed on the upstream side and / or the downstream side of the cluster device are the pass room, the buffer room, and the like. Includes at least one of the swivel chambers.

The film forming apparatus 11, the mask stock apparatus 12, the transport chamber 13, the buffer chamber 16, the swivel chamber 17, and the like are maintained in a high vacuum state in the process of manufacturing the organic light emitting element. The pass chamber 15 is usually maintained in a low vacuum state, but may be maintained in a high vacuum state if necessary.

In the present embodiment, the configuration of the electronic device manufacturing apparatus has been described with reference to FIG. 1, but the present invention is not limited to this, and other types of apparatus and chambers may be provided, and these devices may be provided. And the arrangement between the chambers may change.
Hereinafter, a specific configuration of the film forming apparatus 11 will be described.

<Film formation device>
FIG. 2 is a schematic view showing the configuration of the film forming apparatus 11. In the following description, an XYZ Cartesian coordinate system with the vertical direction as the Z direction is used. When the substrate S is fixed so as to be parallel to the horizontal plane (XY plane) at the time of film formation, the lateral direction (direction parallel to the short side) of the substrate S is the X direction, and the longitudinal direction (direction parallel to the long side) is set. It is in the Y direction. Further, the angle of rotation around the Z axis is represented by θ.

The film forming apparatus 11 includes a vacuum vessel 21 maintained in a vacuum atmosphere or an atmosphere of an inert gas such as nitrogen gas, a substrate support unit 22 provided inside the vacuum vessel 21, a mask support unit 23, and an electrostatic chuck. 24 and a film forming source 25 are included.

The board support unit 22 is a means for receiving and holding the board S from the transfer robot 14 provided in the transfer chamber 13, and is also called a board holder.
A mask support unit 23 is provided below the board support unit 22. The mask support unit 23 is a means for receiving and holding the mask M from the transfer robot 14 provided in the transfer chamber 13, and is also called a mask holder.

The mask M has an opening pattern corresponding to the thin film pattern formed on the substrate S, and is placed on the mask support unit 23. In particular, the mask used for manufacturing an organic EL element for a smartphone is a metal mask on which a fine opening pattern is formed, and is also called FMM (Fine Metal Mask).

An electrostatic chuck 24 for attracting and fixing the substrate by electrostatic attraction is provided above the substrate support unit 22. The electrostatic chuck 24 has a structure in which an electric circuit such as a metal electrode is embedded in a dielectric (for example, ceramic material) matrix. The metal electrode can be installed so as to include the electrode pair, and in the following, the metal electrode forming the electrode pair will be referred to as a first electrode and a second electrode.

The electrostatic chuck 24 may be a Coulomb force type electrostatic chuck, a Johnson-Labeck force type electrostatic chuck, or a gradient force type electrostatic chuck. The electrostatic chuck 24 is preferably a gradient force type electrostatic chuck. Since the electrostatic chuck 24 is a gradient force type electrostatic chuck, even when the substrate S is an insulating substrate, it can be satisfactorily adsorbed by the electrostatic chuck 24. When the electrostatic chuck 24 is a Coulomb force type electrostatic chuck, when positive (+) and negative (-) potentials are applied to the metal electrode, it is applied to the object to be adsorbed such as the substrate S through the dielectric matrix. A polarization charge having the opposite polarity to that of the metal electrode is induced, and the substrate S is attracted and fixed to the electrostatic chuck 24 by the electrostatic attraction between them.

The electrostatic chuck 24 may be formed of one plate or may be formed to have a plurality of sub-plates. Further, even when formed by one plate, a plurality of electric circuits may be included therein and controlled so that the electrostatic attraction is different depending on the position in one plate. Further, the electrostatic chuck 24 may be controlled so that the entire surface has the same electrostatic attraction regardless of the position, whether it is formed by one plate or a plurality of plates.

In the present embodiment, as will be described later, not only the substrate S (first adsorbed body) but also the mask M (second adsorbed body) is adsorbed and held by the electrostatic chuck 24 before film formation.
That is, in this embodiment, the substrate S and the mask M are held in a state where the substrate S (first object to be adsorbed) placed on the lower side in the vertical direction of the electrostatic chuck 24 is attracted and held by the electrostatic chuck 24. After adjusting the relative position and adjusting the relative position between the substrate S and the mask M, the mask M (second adsorbed body) placed on the opposite side of the electrostatic chuck 24 with the substrate S (first adsorbed body) sandwiched between them. Body) is also an electrostatic chuck 24
Adsorb and hold with. In particular, after adjusting the relative position between the substrate S and the mask M, when the mask M is attracted through the substrate S by the electrostatic chuck 24, the ground potential applied to the first electrode and the second electrode forming the electrode pair, respectively. The absolute value of the sum of the potentials (hereinafter, abbreviated as "potential") with respect to the substrate S is the absolute value of the sum of the potentials given to the first electrode and the second electrode when the relative positions of the substrate S and the mask M are adjusted. The potential applied to at least one of the first electrode and the second electrode is controlled so as to increase the potential. This will be described later with reference to FIGS. 3 to 5.

Although not shown in FIG. 2, the organic matter deposited on the substrate S is provided by providing a cooling mechanism (for example, a cooling plate) for suppressing the temperature rise of the substrate S on the side opposite to the suction surface of the electrostatic chuck 24. It may be configured to suppress deterioration or deterioration of the material.

The film forming source 25 (also referred to as a vapor deposition source or an evaporation source) includes a crucible (not shown) in which the film forming material to be formed on the substrate is stored, a heater for heating the crucible (not shown), and a film forming source 25. It includes a shutter (not shown) that prevents the film-forming material from scattering on the substrate until the evaporation rate from the film becomes constant. The film forming source 25 can have various configurations depending on the application, such as a point film forming source and a linear film forming source.

Although not shown in FIG. 2, the film forming apparatus 11 includes a film thickness monitor and a film thickness calculation unit for measuring the thickness of the film deposited on the substrate.

A substrate Z actuator 26, a mask Z actuator 27, an electrostatic chuck Z actuator 28, a position adjusting mechanism 29, and the like are provided on the upper outer side (atmosphere side) of the vacuum vessel 21. These actuators and the position adjusting mechanism are composed of, for example, a motor and a ball screw, or a motor and a linear guide. The board Z actuator 26 is a driving means for raising and lowering (moving in the Z direction) the board support unit 22. The mask Z actuator 27 is a driving means for raising and lowering (moving in the Z direction) the mask support unit 23. The electrostatic chuck Z actuator 28 is a driving means for raising and lowering (moving in the Z direction) the electrostatic chuck 24.

The position adjusting mechanism 29 is a driving means for aligning the electrostatic chuck 24. The position adjusting mechanism 29 moves the entire electrostatic chuck 24 in the X direction, moves in the Y direction, and rotates θ with respect to the substrate support unit 22 and the mask support unit 23. In this embodiment, the electrostatic chuck 24 is positioned in the X, Y, and θ directions while the substrate S is adsorbed, so that the alignment is performed to adjust the relative positions of the substrate S and the mask M.

On the outer upper surface of the vacuum container 21, in addition to the drive mechanism described above, for alignment for photographing the alignment marks formed on the substrate S and the mask M through the transparent window provided on the upper surface of the vacuum container 21. A camera 20 may be installed. In this embodiment, the alignment camera 20 may be installed at a position corresponding to the diagonal line of the rectangular substrate S, the mask M, and the electrostatic chuck 24, or at a position corresponding to the four corners of the rectangle.

The alignment camera 20 installed in the film forming apparatus 11 of the present embodiment is a fine alignment camera used to adjust the relative positions of the substrate S and the mask M with high accuracy, and its viewing angle is It is a narrow but high resolution camera. In addition to the fine alignment camera 20, the film forming apparatus 11 may have a rough alignment camera having a relatively wide viewing angle and a low resolution.

The position adjusting mechanism 29 is the substrate S (first adsorbed body) based on the position information of the substrate S (first adsorbed body) and the mask M (second adsorbed body) acquired by the alignment camera 20. And the mask M (second adsorbed body) are relatively moved to perform alignment for position adjustment.

The film forming apparatus 11 includes a control unit (not shown). The control unit has functions such as transfer and alignment of the substrate S, control of the film formation source 25, and control of film formation. The control unit can be configured by, for example, a computer having a processor, memory, storage, I / O, and the like. In this case, the function of the control unit is realized by the processor executing the program stored in the memory or the storage. As the computer, a general-purpose personal computer may be used, or an embedded computer or a PLC (programmable logical controller) may be used. Alternatively, a part or all of the functions of the control unit may be configured by a circuit such as an ASIC or FPGA. Further, a control unit may be installed for each film forming apparatus, or one control unit may be configured to control a plurality of film forming apparatus.

<Adsorption device>
The adsorption device 30 according to the present embodiment will be described with reference to FIG.
FIG. 3 is a conceptual block diagram of the suction device 30 of the present embodiment. As shown in FIG. 3, the suction device 30 of the present embodiment includes an electrostatic chuck 24, a potential applying unit 31, and a potential control unit 32.

The potential applying portion 31 applies a potential to the electrode portion of the electrostatic chuck 24 and generates a potential difference between the two electrode portions to generate an electrostatic attraction. The potential can be applied to each electrode by the potential applying unit 31 by applying a desired voltage between each electrode unit and the ground electrode (not shown).

The potential control unit 32 determines the magnitude of the potential applied from the potential applying unit 31 to the electrode unit, the time at which the potential application starts, and the potential according to the progress of the adsorption process of the adsorption device 30 or the film forming process of the film forming device 11. Control the maintenance time, the order of applying potential, etc. The potential control unit 32 can independently control the application of potential to the first electrode 241 and the second electrode 242 included in the electrode unit of the electrostatic chuck 24, for example. In the present embodiment, the potential control unit 32 is provided separately from the control unit of the film forming apparatus 11, but the present invention is not limited to this and may be integrated into the control unit of the film forming apparatus 11.

The electrostatic chuck 24 includes an electrode portion having a plurality of electrodes that generate an electrostatic adsorption force for adsorbing an object to be adsorbed (for example, substrate S, mask M) on the adsorption surface, and the electrode portion is an electrode pair. The first electrode 241 and the second electrode 242 are included. The first electrode 241 refers to an electrode or a set of electrodes to which the potential applying unit 31 applies a predetermined potential (Va) under the control of the potential control unit 32, and the second electrode 242 applies the potential under the control of the potential control unit 32. Section 31 refers to an electrode or a set of electrodes that impart a predetermined potential (Vb) different from the potential (Va) imparted to the first electrode 241. Then, depending on the potentials applied to the first electrode 241 and the second electrode 242, the electrostatic chuck 24 exerts an electrostatic attraction that adsorbs only the substrate S or an electrostatic attraction that adsorbs both the substrate S and the mask M. Can occur.

In FIG. 3, the first electrode 241 and the second electrode 242 are alternately arranged one by one, but the present invention is not limited to this, and the first electrode 241 and the second electrode 242 are in other forms (for example, 2). They may be arranged alternately).

The first electrode 241 and the second electrode 242 arranged alternately can have various shapes as long as they can generate an electrostatic attraction with the adsorbed body. For example, the first electrode 241 and the second electrode 242 may each have a comb shape. The comb-shaped first electrode 241 and the second electrode 242 each include a plurality of comb teeth and a base connected to the plurality of comb teeth. The base of each of the electrodes 241 and 242 supplies an electric potential to the comb tooth portion, and the plurality of comb tooth portions generate an electrostatic adsorption force with the object to be adsorbed. Therefore, each comb tooth portion of the first electrode 241 has a second electrode 24.
It is arranged alternately so as to face each comb tooth portion of 2. In this way, by forming the comb teeth of the electrodes 241 and 242 facing each other and intricately intertwined with each other, the distance between the electrodes to which different potentials are applied can be narrowed, and a large unequal electric field is formed. However, the object to be adsorbed can be adsorbed by the gradient force.

<Adsorption method and potential control by adsorption device>
4 (a) to 4 (c) are schematic cross-sectional views showing a process of sequentially adsorbing the substrate S and the mask M on the electrostatic chuck 24 by the adsorption method according to the present invention, and potential control at that time.

FIG. 4A shows a state in which the substrate S is mounted on the substrate support unit 22 in the vacuum vessel 21 and the mask M is mounted on the mask support unit 23. Referring to FIG. 4A, the substrate S separated from the electrostatic chuck 24 at a predetermined interval is also separated from the mask M in a direction opposite to the direction in which the electrostatic chuck 24 is located at a predetermined interval. Further, no potential is applied to the first electrode 241 and the second electrode 242 of the electrostatic chuck 24, and the electrostatic attraction is not induced in the electrostatic chuck 24.

Subsequently, a predetermined potential is applied to the first electrode 241 and the second electrode 242 to adsorb the substrate S to the electrostatic chuck 24, and then the relative position between the substrate S adsorbed by the electrostatic chuck 24 and the mask M. To adjust.

FIG. 4B shows a step of adjusting the relative position with respect to the mask M in a state where the substrate S is attracted to the electrostatic chuck 24 in this way. Although specific illustration is omitted, it is preferable that the adjustment of the relative position with the mask is performed in a state where the separation distance between the substrates S and the mask M is narrowed within the range where the substrate S and the mask M do not contact, and therefore the substrate is not shown. After suction, an additional step of lowering the electrostatic chuck 24 or raising the mask support unit 23 to move the substrate S or the mask M to a height that adjusts the relative position between the substrate S and the mask M is performed. May be good.

Referring to FIG. 4B, a first potential (V1) is applied to the first electrode 241 of the electrostatic chuck 24, and at the same time, a second potential (V2) is applied to the second electrode 242. .. The first potential (V1) and the second potential (V2) are the potentials applied to the first electrode 241 and the second electrode 242 when the substrate S is adsorbed on the electrostatic chuck 24, and are the potentials applied to the first electrode 241 and the second electrode 242, respectively, at the time of adsorbing the substrate. The relative position between the substrate S and the mask M is adjusted (aligned) while the applied potential is maintained as it is.

At this time, as long as only the substrate S is adsorbed on the electrostatic chuck 24 and the attractive force to the extent that the mask M is not adsorbed is induced, the size and polarity of the first potential (V1) and the second potential (V2) are particularly limited. There is no. Preferably, the first potential (V1) and the second potential (V2) are the magnitudes of the absolute values of the potentials with respect to the ground potential, such that the first potential (V1) is 1 kV and the second potential (V2) is -1 kV. Similarly, the polarity can have different values. According to this, the potential difference (ΔV) between the first electrode 241 and the second electrode 242 is large enough to sufficiently adsorb the substrate S, while the first potential (V1) or the second potential The size of (V2) itself, that is, the potential of the first electrode 241 or the second electrode 242 with respect to the ground potential is relatively small (for example, 1 kV), and the mask M is not attracted by the electrostatic attraction of the electrostatic chuck 24. .. Therefore, even if the substrate S and the mask M are aligned with the substrate S adsorbed on the electrostatic chuck 24, the substrate S and the mask M do not come into contact with each other, so that they are formed on the surface of the substrate S or above the surface of the substrate S. It is possible to prevent damage to the material film.

After the alignment step between the substrate S and the mask M is performed with the substrate S adsorbed on the electrostatic chuck 24, the step of adsorbing the mask M through the substrate S by the electrostatic chuck 24 is performed. FIG. 4C shows a step of adsorbing the mask M to the electrostatic chuck 24 through the substrate S. Referring to FIG. 4C, a third potential (V3) is applied to the first electrode 241 of the electrostatic chuck 24, and at the same time, a fourth potential (V4) is applied to the second electrode 242.

In the embodiment of the present invention, at least one of the first electrode 241 and the second electrode 242 is induced so as to induce a suction force having a sufficient size to attract the mask M to the electrostatic chuck 24 through the substrate S. The potential applied to one electrode is changed. That is, the first electrode is such that the absolute value of the sum of the third potential (V3) and the fourth potential (V4) is larger than the absolute value of the sum of the first potential (V1) and the second potential (V2). The potentials of 241 and the second electrode 242 are controlled.

More specifically, as described above with reference to FIG. 4B, the potential difference (ΔV) between the first potential (V1) and the second potential (V2) at the time of alignment between the substrate S and the mask M. The potentials of the first electrode 241 and the second electrode 242 are controlled so as to have a predetermined size. That is, the potential difference (ΔV) is controlled so that the electrostatic chuck 24 generates an attractive force that attracts only the substrate S. In short, the force for adsorbing the substrate S can be controlled mainly by adjusting the magnitude of the potential difference between the electrode pairs 241 and 242 of the electrostatic chuck 24. On the other hand, the force for adsorbing the mask M can be changed by adjusting the magnitude of the potential of each electrode constituting the electrode pair 241 and 242 of the electrostatic chuck 24 even if the potential difference (ΔV) is the same. Can be done. Therefore, as shown in FIG. 4C, when the mask M is adsorbed through the substrate S, at least one magnitude (absolute value) of the third potential (V3) and the fourth potential (V4) is large. The potentials of the first electrode 241 and the second electrode 242 are controlled so as to be.

For example, at the time of alignment between the substrate S and the mask M, the first potential (V1) and the second potential (V2) are controlled so that the magnitudes of the absolute values are the same and the polarities are different potentials. On the other hand, when the mask M is adsorbed through the substrate S after the alignment is completed, the absolute value of the sum of the third potential (V3) and the fourth potential (V4) is the first potential (V1) and the second potential (V1). The potential applied to at least one of the first electrode 241 and the second electrode 242 is changed so as to be larger than the absolute value of the sum of V2). That is, the potential applied to the first electrode 241 and the second electrode 242 is controlled so as to be closer to the + side or the − side.

At this time, the potential difference (ΔV) between the third potential (V3) and the fourth potential (V4) is controlled to be the same as the potential difference (ΔV) between the first potential (V1) and the second potential (V2). Can be done. By maintaining the same potential difference, the substrate S is continuously adsorbed by the electrostatic chuck 24 while the mask M is adsorbed. For example, when the first potential (V1) is 1 kV and the second potential (V2) is -1 kV as in the above-mentioned example, the potential difference between the third potential (V3) and the fourth potential (V4) is 2 kV ( It can be controlled while maintaining ΔV). That is, the third potential (V3) and the fourth potential (V4) can be controlled as 2 kV and 0 kV, 4 kV and 2 kV, 0 kV and -2 kV, or -2 kV and -4 kV, respectively. Of these, when either the third potential (V3) or the fourth potential (V4) is the ground potential (for example, the third potential (V3) and the fourth potential (V4) are 2 kV and 0 kV, or 0 kV. -2kV) is relatively compared to other cases (eg, when the third potential (V3) and the fourth potential (V4) are 4kV and 2kV, or -2kV and -4kV). A potential can be applied to each of the first electrode 241 and the second electrode 242 with a low-potential power source.

Unlike this, the potential difference (ΔV) between the third potential (V3) and the fourth potential (V4) is made larger than the potential difference (ΔV) between the first potential (V1) and the second potential (V2). It can also be controlled. In this case, the force for adsorbing the substrate S increases, the substrate S can continue to be adsorbed on the electrostatic chuck 24, and the force for adsorbing the mask M also increases, so that the substrate S and the mask M are in close contact with each other. You can also increase the degree.

<Film formation process>
Hereinafter, a film forming method using the potential control of the electrostatic chuck according to the present embodiment will be described.
With the mask M supported by the mask support unit 23 in the vacuum container 21, the substrate is carried into the vacuum container 21 of the film forming apparatus 11 by the transfer robot 14 in the transfer chamber 13.
The hand of the transfer robot 14 that has entered the vacuum container 21 is lowered, and the substrate S is placed on the support portion of the substrate support unit 22.

Subsequently, after the electrostatic chuck 24 descends toward the substrate S and is sufficiently close to or in contact with the substrate S, the first potential is applied to the electrode pair of the electrostatic chuck 24, that is, the first electrode 241 and the second electrode 242, respectively. (V1) and a second potential (V2) are applied, and the substrate S is adsorbed.

In one embodiment of the present invention, in order to sufficiently attract the substrate S to the electrostatic chuck 24 and prevent the mask M from being attracted and coming into contact with the substrate S during alignment between the substrate S and the mask M, which will be described later. The first potential (V1) and the second potential (V2) are controlled to have the same magnitude but different polarities.

With the substrate S adsorbed on the electrostatic chuck 24, the substrate S is lowered toward the mask M in order to measure the relative positional deviation of the substrate S with respect to the mask M. At this time, the first potential (V1) and the second potential (V2) applied to the first electrode 241 and the second electrode 242, respectively, are maintained at the same magnitude.

When the substrate S descends to the measurement position, the alignment camera 20 photographs the alignment marks formed on the substrate S and the mask M to measure the relative positional deviation between the substrate and the mask. As a result of the measurement, if it is found that the amount of displacement of the substrate relative to the mask exceeds the threshold value, the substrate S in a state of being adsorbed by the electrostatic chuck 24 is moved in the horizontal direction (XYθ direction) to move the substrate. Position adjustment (alignment) with respect to the mask. In the position adjustment step of moving at least one of the substrate S and the mask M, which is performed after the measurement step of measuring the alignment marks formed on the substrate S and the mask M, the substrate S in the measurement step is used. The distance between the substrate S and the mask M in the position adjusting step may be larger than the distance between the mask M. By doing so, when the substrate S and the mask M are relatively moved, the substrate S and the mask M come into contact with each other to more reliably damage the substrate S, the element formed on the substrate S, and the mask M. It will be possible to suppress it. In such a case, at least in the measurement step of the alignment step, the first potential (V1) is given to the first electrode 241 and the second potential (V2) is given to the second electrode 242. Is preferable.

After the alignment step, the mask M is attracted to the electrostatic chuck 24 through the substrate S. Therefore, a third potential (V3) and a fourth potential (V4) are applied to the electrode pair of the electrostatic chuck 24, that is, the first electrode 241 and the second electrode 242, respectively. At this time, the potential difference between the third potential (V3) and the fourth potential (V4) is the same as the potential difference between the first potential (V1) and the second potential (V2), and the third potential (V3) and the fourth potential (V3). The absolute value of the sum with the potential (V4) is at least one of the first electrode 241 and the second electrode 242 so as to be larger than the absolute value of the sum of the first potential (V1) and the second potential (V2). The potential applied to one electrode is changed. Depending on the embodiment, the potential difference between the third potential (V3) and the fourth potential (V4) can be made larger than the potential difference between the first potential (V1) and the second potential (V2).

After the adsorption step of the mask M is completed, the shutter of the film forming source 25 is opened, and the film forming material is vapor-deposited on the substrate S via the mask.

In the above description, the film forming apparatus 11 has a so-called upward vapor deposition method (depot-up) in which the film forming surface of the substrate S faces downward in the vertical direction. The configuration is not limited, and the substrate S may be arranged in a state of being vertically erected on the side surface side of the vacuum vessel 21, and the film formation may be performed in a state where the film formation surface of the substrate S is parallel to the direction of gravity. ..

<Manufacturing method of electronic devices>
Next, an example of a method for manufacturing an electronic device using the film forming apparatus of this embodiment will be described. Hereinafter, the configuration and manufacturing method of the organic EL display device will be illustrated as an example of the electronic device.

First, the organic EL display device to be manufactured will be described. FIG. 5A shows an overall view of the organic EL display device 60, and FIG. 5B shows a cross-sectional structure of one pixel.

As shown in FIG. 5A, a plurality of pixels 62 including a plurality of light emitting elements are arranged in a matrix in the display area 61 of the organic EL display device 60. Although the details will be described later, each of the light emitting elements has a structure including an organic layer sandwiched between a pair of electrodes. The pixel referred to here refers to the smallest unit capable of displaying a desired color in the display area 61. In the case of the organic EL display device according to this embodiment, the pixel 62 is composed of a combination of the first light emitting element 62R, the second light emitting element 62G, and the third light emitting element 62B, which emit light different from each other. The pixel 62 is often composed of a combination of a red light emitting element, a green light emitting element, and a blue light emitting element, but may be a combination of a yellow light emitting element, a cyan light emitting element, and a white light emitting element, and is particularly limited to at least one color. It is not limited.

5 (b) is a schematic partial cross-sectional view taken along the line AB of FIG. 5 (a). The pixel 62 has an organic EL element having an anode 64, a hole transport layer 65, any of the light emitting layers 66R, 66G, 66B, an electron transport layer 67, and a cathode 68 on the substrate 63. There is. Of these, the hole transport layer 65, the light emitting layer 66R, 66G, 66B, and the electron transport layer 67 correspond to the organic layer. Further, in the present embodiment, the light emitting layer 66R is an organic EL layer that emits red, the light emitting layer 66G is an organic EL layer that emits green, and the light emitting layer 66B is an organic EL layer that emits blue. The light emitting layers 66R, 66G, and 66B are formed in a pattern corresponding to a light emitting element (sometimes referred to as an organic EL element) that emits red, green, and blue, respectively. Further, the anode 64 is formed separately for each light emitting element. The hole transport layer 65, the electron transport layer 67, and the cathode 68 may be formed in common with the plurality of light emitting elements 62R, 62G, 62B, or may be formed for each light emitting element. An insulating layer 69 is provided between the anode 64 in order to prevent the anode 64 and the cathode 68 from being short-circuited by foreign matter. Further, since the organic EL layer is deteriorated by moisture and oxygen, a protective layer 70 for protecting the organic EL element from moisture and oxygen is provided.

In FIG. 5B, the hole transport layer 65 and the electron transport layer 67 are shown as one layer, but they are formed of a plurality of layers including the hole block layer and the electron block layer due to the structure of the organic EL display element. May be done. Further, between the anode 64 and the hole transport layer 65, a hole injection layer having an energy band structure capable of smoothly injecting holes from the anode 64 into the hole transport layer 65 is provided. It can also be formed. Similarly, an electron injection layer can be formed between the cathode 68 and the electron transport layer 67.

Next, an example of a method for manufacturing an organic EL display device will be specifically described.
First, a circuit (not shown) for driving the organic EL display device and a substrate 63 on which the anode 64 is formed are prepared.

Acrylic resin is formed by spin coating on the substrate 63 on which the anode 64 is formed, and the acrylic resin is patterned by a lithography method so that an opening is formed in the portion where the anode 64 is formed to form an insulating layer 69. .. This opening corresponds to a light emitting region where the light emitting element actually emits light.

The substrate 63 in which the insulating layer 69 is patterned is carried into the first organic material film forming apparatus, the substrate is held by an electrostatic chuck, and the hole transport layer 65 is a common layer on the anode 64 in the display region. To form a film. The hole transport layer 65 is formed by vacuum vapor deposition. In reality, the hole transport layer 65 is formed in a size larger than that of the display region 61, so that a high-definition mask is unnecessary.

Next, the substrate 63 on which the hole transport layer 65 is formed is carried into the second organic material film forming apparatus and held by an electrostatic chuck. The substrate and the mask are aligned, the mask is held through the substrate by an electrostatic chuck, and a light emitting layer 66R that emits red is formed on the portion of the substrate 63 where the element that emits red is arranged.

Similar to the film formation of the light emitting layer 66R, the light emitting layer 66G that emits green color is formed by the third organic material film forming apparatus, and the light emitting layer 66B that emits blue color is further formed by the fourth organic material film forming apparatus. After the film formation of the light emitting layers 66R, 66G, and 66B is completed, the electron transport layer 67 is formed on the entire display region 61 by the fifth film forming apparatus. The electron transport layer 67 is formed as a layer common to the light emitting layers 66R, 66G, and 66B of three colors.

The substrate formed up to the electron transport layer 67 is moved by a metallic material film forming apparatus to form a cathode 68.
After that, it moves to a plasma CVD device to form a protective layer 70, and the organic EL display device 60 is completed.

From the time when the substrate 63 in which the insulating layer 69 is patterned is carried into the film forming apparatus until the film formation of the protective layer 70 is completed, when the substrate 63 is exposed to an atmosphere containing moisture or oxygen, a light emitting layer made of an organic EL material is formed. It may be deteriorated by moisture and oxygen. Therefore, in this example, the loading and unloading of the substrate between the film forming apparatus is performed in a vacuum atmosphere or an inert gas atmosphere.

Although the above-mentioned embodiment shows an example of the present invention, the present invention is not limited to the configuration of the above-mentioned embodiment and may be appropriately modified within the scope of the technical idea.

11: Film forming device 21: Vacuum container 22: Substrate support unit 23: Mask support unit 24: Electrostatic chuck 30: Adsorption device 31: Potential applying unit 32: Potential control unit 241 and 242: Electrode pair (first electrode, first 2 electrodes)

Claims (15)

An electrostatic chuck having a first electrode and a second electrode for generating an electrostatic adsorption force for adsorbing a second adsorbed body by sandwiching the first adsorbed body and the first adsorbed body, and an electrostatic chuck.
A potential applying portion that applies a potential to the first electrode and the second electrode,
A potential control unit for independently controlling the application of the potential to the first electrode and the application of the potential to the second electrode by the potential applying unit is provided.
The potential control unit applies a first potential to the first electrode and a second potential to the second electrode in order to generate an electrostatic attraction force for adsorbing the first object to be adsorbed, and then the second potential. At least one of the 1 potential and the 2nd potential is changed, a 3rd potential is applied to the 1st electrode, and a 4th potential is applied to the 2nd electrode.
The potential difference between the third potential and the fourth potential is the same as the potential difference between the first potential and the second potential.
An adsorption device characterized in that the absolute value of the sum of the third potential and the fourth potential is larger than the absolute value of the sum of the first potential and the second potential. The adsorption device according to claim 1, wherein the first potential and the second potential have the same absolute value and opposite polarities with respect to the ground potential . The adsorption device according to claim 1 or 2, wherein one of the third potential and the fourth potential is 0 V. The suction device according to any one of claims 1 to 3, wherein the first electrode and the second electrode are arranged alternately. The adsorption device according to any one of claims 1 to 4, wherein the first adsorbed body is an insulating substrate, and the second adsorbed body is a metallic mask. An electrostatic chuck having a first electrode and a second electrode for generating an electrostatic adsorption force for adsorbing a second adsorbed body by sandwiching the first adsorbed body and the first adsorbed body, and an electrostatic chuck.
A potential applying portion that applies a potential to the first electrode and the second electrode,
A potential control unit for independently controlling the application of the potential to the first electrode and the application of the potential to the second electrode by the potential applying unit is provided.
The potential control unit
From the state where the first electrode to be adsorbed is attracted to the electrostatic chuck and the electrostatic attraction force is generated so that the second adsorbed body is not adsorbed to the electrostatic chuck, the first electrode and the second electrode are generated. By changing at least one of the potentials applied to the electrodes, the electrostatic adsorption force exerted on the second object to be adsorbed is changed.
The potential applied to the first electrode and the potential applied to the second electrode are the same without changing the potential difference between the potential applied to the first electrode and the potential applied to the second electrode. An adsorption device characterized by increasing the absolute value of the sum of. The potential control unit has the electrostatic chuck and the second adsorbed body from the state where the first adsorbed body is adsorbed on the electrostatic chuck and the second adsorbed body is not adsorbed on the electrostatic chuck. Static electricity exerted on the second adsorbed body by changing at least one of the potentials applied to the first electrode and the second electrode while maintaining the separation distance between the support mechanism that supports the body. The suction device according to claim 6, wherein the electric suction force is changed. It is a film forming apparatus for forming a film on a substrate via a mask.
It includes a substrate which is a first adsorbed body and an adsorption device for adsorbing a mask which is a second adsorbed body through the substrate.
The film forming apparatus according to any one of claims 1 to 7, wherein the adsorption apparatus is the adsorption apparatus. It is a method for adsorbing a second adsorbed body by sandwiching the first adsorbed body and the first adsorbed body on an electrostatic chuck having a first electrode and a second electrode.
A first potential with respect to the ground potential is applied to the first electrode, a second potential with respect to the ground potential is applied to the second electrode to generate an electrostatic adsorption force , and the second object to be adsorbed is not adsorbed. The first adsorption step of adsorbing the first object to be adsorbed to the electrostatic chuck and
A third potential with respect to the ground potential is applied to the first electrode, a fourth potential with respect to the ground potential is applied to the second electrode, and the second adsorbed body is electrostatically charged with the first adsorbed body interposed therebetween. Including the second adsorption step of adsorption to the chuck
The potential difference between the third potential and the fourth potential is the same as the potential difference between the first potential and the second potential.
An adsorption method characterized in that the absolute value of the sum of the third potential and the fourth potential is larger than the absolute value of the sum of the first potential and the second potential. The adsorption method according to claim 9, wherein the first potential and the second potential have the same absolute value and opposite polarities. The adsorption method according to claim 9 or 10, wherein one of the third potential and the fourth potential is 0V. The adsorption method according to any one of claims 9 to 11, wherein the first electrode and the second electrode are arranged alternately. The adsorption method according to any one of claims 9 to 12, wherein the first adsorbed body is an insulating substrate, and the second adsorbed body is a metallic mask. It is a film forming method for forming a film forming material by sandwiching a substrate and the substrate on an electrostatic chuck having a first electrode and a second electrode and adsorbing the mask.
At the stage of bringing the mask into the vacuum container,
The stage of carrying the substrate into the vacuum container and
A step of applying a first potential with respect to the ground potential to the first electrode, applying a second potential to the ground potential to the second electrode, and adsorbing the substrate to the electrostatic chuck without adsorbing the mask.
A step of applying a third potential with respect to the ground potential to the first electrode, applying a fourth potential to the ground potential to the second electrode, sandwiching the substrate, and adsorbing the mask to the electrostatic chuck.
This includes a step of releasing the film-forming material in a state where the substrate and the mask are adsorbed on the electrostatic chuck, and forming the film-forming material on the substrate through the mask.
The potential difference between the third potential and the fourth potential is the same as the potential difference between the first potential and the second potential.
A film forming method characterized in that the absolute value of the sum of the third potential and the fourth potential is larger than the absolute value of the sum of the first potential and the second potential. A method for manufacturing an electronic device, which comprises manufacturing an electronic device by using the film forming method according to claim 14.

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