JP2020021926A - Electrostatic chuck system, film forming apparatus, suction method, film forming method, and electronic device manufacturing method - Google Patents

Abstract

To favorably attract both a first object to be attracted and a second object to be attracted to an electrostatic chuck.SOLUTION: An electrostatic chuck system that attracts an object to be attracted includes an electrostatic chuck that includes an attraction surface that attracts the object to be attracted, and an electrode unit, and that causes the object to be attracted to be attracted to the attraction surface by applying a voltage to the electrode unit, a magnetic force generation unit that is disposed on the opposite side of the electrostatic chuck from the attraction surface, and includes a plurality of electromagnet modules in which a plane parallel to the attraction surface is divided into a plurality of regions, and that is arranged at positions corresponding to the plurality of regions, and a magnetic force control unit that controls the magnetic force of each of the plurality of electromagnet modules.SELECTED DRAWING: Figure 5

Description

  The present invention relates to an electrostatic chuck system, a film forming apparatus, a suction method, a film forming method, and a method for manufacturing an electronic device.

  In the production of an organic EL display device (organic EL display), when an organic light emitting element (OLED: Organic Light Emitting Diode) constituting the organic EL display device is formed, evaporation is performed from an evaporation source of a film forming apparatus. The organic material layer and the metal layer are formed by depositing the deposited material on the substrate through a mask on which a pixel pattern is formed.

  In an upward deposition type (deposit-up) film forming apparatus, an evaporation source is provided at a lower portion of a vacuum vessel of the film forming apparatus, a substrate is disposed at an upper portion of the vacuum vessel, and a deposition material is deposited on a lower surface of the substrate. In the vacuum container of such an upward deposition type film forming apparatus, only the peripheral portion of the lower surface of the substrate is held by the substrate holder, so that the substrate is bent by its own weight, which is one factor that reduces the deposition accuracy. It has become. Also in a film forming apparatus of a method other than the upward evaporation method, the substrate may be bent by its own weight.

  As a method for reducing the deflection of the substrate due to its own weight, a technique using an electrostatic chuck has been studied. That is, the entire upper surface of the substrate is attracted by the electrostatic chuck, so that the deflection of the substrate can be reduced.

  Patent Literature 1 discloses a technique in which a substrate and a mask are attracted by an electrostatic chuck.

Korean Patent Publication No. 2007-0010723

  However, in the related art, when the mask is sucked through the substrate by the electrostatic chuck, there is a problem that wrinkles remain on the mask after the suction.

  SUMMARY OF THE INVENTION An object of the present invention is to make a plurality of objects to be sucked (a first object to be sucked and a second object to be sucked), such as a substrate and a mask, be satisfactorily sucked to an electrostatic chuck so that wrinkles do not remain.

An electrostatic chuck system according to one embodiment of the present invention includes:
An electrostatic chuck system for adsorbing an object to be adsorbed,
An electrostatic chuck that has an adsorption surface that adsorbs the object to be adsorbed and an electrode portion, and that causes the object to be adsorbed to be adsorbed to the adsorption surface by applying a voltage to the electrode portion;
A magnetic force generating unit disposed on the opposite side of the chucking surface with respect to the electrostatic chuck, wherein a surface parallel to the chucking surface is divided into a plurality of regions and arranged at positions corresponding to the plurality of regions. Magnetic force generating section having a plurality of electromagnet modules,
A magnetic force control unit that controls the magnetic force of each of the plurality of electromagnet modules;
It is characterized by having.

A film forming apparatus according to an embodiment of the present invention includes:
A film forming apparatus for forming a film on a substrate via a mask,
An electrostatic chuck system for adsorbing the substrate as the first object to be adsorbed and the mask as the second object to be adsorbed,
The electrostatic chuck system is the above-described electrostatic chuck system.

The adsorption method according to an embodiment of the present invention includes:
A method for adsorbing an object to be adsorbed,
A first suction step of applying a first voltage to the electrode portion of the electrostatic chuck to cause the first object to be suctioned to be suctioned to the suction surface of the electrostatic chuck;
A second suction step of applying a second voltage that is the same as or different from the first voltage to the electrode unit, and causing the electrostatic chuck to hold the second suction object with the first suction object interposed therebetween;
Has,
The second adsorption step comprises:
A plurality of electromagnet modules arranged on the opposite side to the attraction surface with respect to the electrostatic chuck, a surface parallel to the attraction surface is divided into a plurality of regions, and arranged at positions corresponding to the plurality of regions. A suction step of drawing at least a part of the second object to be attracted toward the first object to be attracted by a magnetic force from a magnetic force generator having the same;
An adsorption step of applying the second voltage to the electrode portion while adsorbing the second object to be attracted in the suction step with the first object to be adsorbed, and adsorbing the second object to be adsorbed; ,
It is characterized by having.

The film forming method according to an embodiment of the present invention includes:
A film forming method for forming a deposition material on a substrate via a mask,
Loading a mask into the vacuum vessel;
Loading a substrate into the vacuum vessel,
A first suction step of applying a first voltage to an electrode portion of the electrostatic chuck to suck the substrate on a suction surface of the electrostatic chuck;
A second suction step of applying a second voltage that is the same as or different from the first voltage to the electrode unit, and holding the mask on the electrostatic chuck with the substrate interposed therebetween;
In the state where the substrate and the mask are attracted to the electrostatic chuck, a step of evaporating a vapor deposition material and forming a film of the vapor deposition material on the substrate via the mask,
Has,
The second adsorption step comprises:
A plurality of electromagnet modules arranged on the opposite side to the attraction surface with respect to the electrostatic chuck, a surface parallel to the attraction surface is divided into a plurality of regions, and arranged at positions corresponding to the plurality of regions. A suction step of drawing at least a part of the mask toward the substrate side by a magnetic force from a magnetic force generating unit having;
An adsorption step of applying the second voltage to the electrode portion while bringing the mask attracted in the suction step into contact with the substrate, and adsorbing the mask;
It is characterized by having.

  An electronic device manufacturing method according to an embodiment of the present invention is characterized in that an electronic device is manufactured using the film forming method.

  ADVANTAGE OF THE INVENTION According to this invention, each of a 1st to-be-adsorbed body and a 2nd to-be-adsorbed body can be adsorbed favorably to an electrostatic chuck so that wrinkles may not remain.

FIG. 1 is a schematic diagram of a part of an electronic device manufacturing apparatus. FIG. 2 is a schematic diagram of a film forming apparatus according to the first embodiment. FIG. 3 is a configuration block diagram of the electrostatic chuck system according to the first embodiment. FIG. 4 is a schematic plan view of the electrostatic chuck according to the first embodiment. FIG. 5 is a diagram schematically illustrating an arrangement relationship between the magnetic force generating unit, the electrostatic chuck, and the mask in the mask chucking step of the electrostatic chuck according to the first embodiment. FIG. 6 is a process chart showing an order of a process of adsorbing a substrate to an electrostatic chuck. FIG. 7 is a process chart showing the order of the process of attracting the mask to the electrostatic chuck. FIG. 8 is a schematic diagram illustrating an electronic device.

  Hereinafter, preferred embodiments and examples of the present invention will be described with reference to the drawings. However, the following embodiments and examples are merely illustrative examples of preferred configurations of the present invention, and the scope of the present invention is not limited to those configurations. In the following description, the hardware configuration and software configuration of the apparatus, the processing flow, the manufacturing conditions, dimensions, materials, shapes, and the like limit the scope of the present invention to only these, unless otherwise specified. It is not intended.

The present invention can be applied to an apparatus for forming a film by depositing various materials on the surface of a substrate, and can be desirably applied to an apparatus for forming a thin film (material layer) of a desired pattern by vacuum evaporation. As the material of the substrate, any material such as glass, a film of a polymer material, and a metal can be selected, and the substrate may be, for example, a substrate in which a film of polyimide or the like is laminated on a glass substrate. . In addition, an arbitrary material such as an organic material and a metal material (metal, metal oxide, or the like) may be selected as the evaporation material. The present invention can be applied to a film forming apparatus including a sputtering apparatus and a CVD (Chemical Vapor Deposition) apparatus, in addition to the vacuum evaporation apparatus described in the following description. The technology of the present invention is specifically applicable to manufacturing apparatuses for organic electronic devices (for example, organic EL elements, thin-film solar cells), optical members, and the like. In particular, an apparatus for manufacturing an organic EL element in which an organic EL element is formed by evaporating an evaporation material and evaporating the evaporation material on a substrate via a mask is one of preferable application examples of the present invention.

<Electronic device manufacturing equipment>
FIG. 1 is a plan view schematically illustrating a configuration of a part of the electronic device manufacturing apparatus according to the first embodiment.

  The manufacturing apparatus of FIG. 1 is used, for example, for manufacturing a display panel of an organic EL display device for a smartphone. In the case of a display panel for a smartphone, for example, a 4.5 generation substrate (about 700 mm × about 900 mm) or a 6 generation full size (about 1500 mm × about 1850 mm) or a half cut size (about 1500 mm × about 925 mm) substrate After forming a film for forming an organic EL element, the substrate is cut out to produce a plurality of small-sized panels.

  An electronic device manufacturing apparatus generally includes a plurality of cluster apparatuses 1 and a relay apparatus that connects between the cluster apparatuses 1.

  The cluster apparatus 1 includes a plurality of film forming apparatuses 11 for performing processing (for example, film formation) on the substrate S, a plurality of mask stock apparatuses 12 for storing masks M before and after use, and a transfer chamber 13 disposed at the center thereof. And. The transfer chamber 13 is connected to each of the plurality of film forming apparatuses 11 and the mask stock apparatus 12, as shown in FIG.

A transfer robot 14 that transfers the substrate and the mask is disposed in the transfer chamber 13. The transfer robot 14 transfers the substrate S from the pass chamber 15 of the relay device arranged on the upstream side to the film forming apparatus 11. Further, the transfer robot 14 transfers the mask M between the film forming apparatus 11 and the mask stock apparatus 12. The transfer robot 14 is, for example, a robot having a structure in which a robot hand holding a substrate S or a mask M is attached to an articulated arm.

  In the film forming apparatus 11 (also referred to as an evaporation apparatus), an evaporation material stored in an evaporation source is heated and evaporated by a heater, and is evaporated on a substrate via a mask. A series of film forming processes such as transfer of the substrate S to and from the transfer robot 14, adjustment (alignment) of the relative position between the substrate S and the mask M, fixing of the substrate S on the mask M, and film formation (evaporation) This is performed by the device 11.

  In the mask stock apparatus 12, a new mask used in the film forming process in the film forming apparatus 11 and a used mask are stored in two cassettes. The transfer robot 14 transfers the used mask from the film forming apparatus 11 to the cassette of the mask stock apparatus 12, and transfers a new mask stored in another cassette of the mask stock apparatus 12 to the film forming apparatus 11.

  The cluster apparatus 1 includes a pass chamber 15 for transporting the substrate S from the upstream side in the flow direction of the substrate S to the cluster apparatus 1 and another substrate S on which the film forming process is completed in the cluster apparatus 1 on the downstream side. A buffer chamber 16 for transferring to the cluster device is connected. The transfer robot 14 in the transfer chamber 13 receives the substrate S from the upstream path chamber 15 and transfers the substrate S to one of the film forming apparatuses 11 (for example, the film forming apparatus 11a) in the cluster apparatus 1. Further, the transfer robot 14 receives the substrate S on which the film forming process has been completed in the cluster apparatus 1 from one of the plurality of film forming apparatuses 11 (for example, the film forming apparatus 11b), and connects the buffer S connected to the downstream side. It is transported to the chamber 16.

  A swirling chamber 17 that changes the direction of the substrate is provided between the buffer chamber 16 and the pass chamber 15. The swiveling chamber 17 is provided with a transfer robot 18 for receiving the substrate S from the buffer chamber 16, rotating the substrate S by 180 °, and transferring the substrate S to the pass chamber 15. Thereby, the orientation of the substrate S is the same in the upstream cluster device and the downstream cluster device, and the substrate processing is facilitated.

  The pass chamber 15, the buffer chamber 16, and the swirl chamber 17 are so-called relay devices that connect the cluster devices 1, and the relay devices installed on the upstream and / or downstream sides of the cluster device 1 include the pass chamber 15, At least one of the buffer chamber 16 and the swirl chamber 17 is provided.

  The film forming apparatus 11, the mask stock apparatus 12, the transfer chamber 13, the buffer chamber 16, the swirl chamber 17, and the like are maintained in a high vacuum state in the process of manufacturing the organic EL element. The pass chamber 15 is normally maintained in a low vacuum state, but may be maintained in a high vacuum state as needed.

  In the first embodiment, the configuration of the electronic device manufacturing apparatus has been described with reference to FIG. 1. However, the present invention is not limited to this, and may have other types of apparatuses and chambers. Or the arrangement between chambers may be different.

  Hereinafter, a specific configuration of the film forming apparatus 11 will be described.

<Deposition equipment>
FIG. 2 is a schematic diagram illustrating a configuration of the film forming apparatus 11. In the following description, an XYZ orthogonal coordinate system in which the vertical direction is the Z direction is used. When the substrate S is fixed so as to be parallel to the horizontal plane (XY plane) at the time of film formation, the short direction (the direction parallel to the short side) of the substrate S is the X direction, and the long direction (the direction parallel to the long side). Let it be the Y direction. The rotation angle about the Z axis is represented by θ.

  The film forming apparatus 11 includes a vacuum vessel 21 maintained in a vacuum atmosphere or an inert gas atmosphere such as a nitrogen gas, a substrate support unit 22 provided inside the vacuum vessel 21, a mask support unit 23, and an electrostatic chuck. 24 and an evaporation source 25.

  The substrate support unit 22 is a unit that receives and holds the substrate S transported by the transport robot 14 provided in the transport chamber 13, and is also called a substrate holder.

  A mask support unit 23 is provided below the substrate support unit 22. The mask support unit 23 is a unit that receives and holds the mask M transported by the transport robot 14 provided in the transport chamber 13 and is also called a mask holder.

  The mask M has an opening pattern corresponding to the thin film pattern formed on the substrate S, and is mounted on the mask support unit 23. In particular, a mask used for manufacturing an organic EL element for a smartphone is a metal mask on which a fine opening pattern is formed, and is also called an FMM (Fine Metal Mask).

  Above the substrate support unit 22, an electrostatic chuck 24 for adsorbing and fixing the substrate by electrostatic attraction is provided. The electrostatic chuck 24 has a structure in which an electric circuit such as a metal electrode is embedded in a dielectric (for example, ceramic material) matrix. The electrostatic chuck 24 may be a Coulomb force type electrostatic chuck, a Johnson-Rahbek force type electrostatic chuck, or a gradient force type electrostatic chuck. The electrostatic chuck 24 is preferably a gradient force type electrostatic chuck. When the electrostatic chuck 24 is a gradient force type, even if the substrate S is an insulating substrate, it can be satisfactorily adsorbed by the electrostatic chuck 24. When the electrostatic chuck 24 is of Coulomb force type, when a positive (+) voltage and a negative (−) voltage are applied to the metal electrode, the object to be attracted such as the substrate S is polarized through the dielectric matrix in the opposite polarity to the metal electrode. Electric charges are induced, and the substrate S is attracted and fixed to the electrostatic chuck 24 by electrostatic attraction therebetween. The electrostatic chuck 24 may be formed of one plate or may have a plurality of sub-plates. Further, even in the case where a single plate is formed, a plurality of electric circuits may be provided therein, and the control may be performed such that the electrostatic attraction differs depending on the position within one plate.

  In the first embodiment, such an electrostatic chuck 24 is used to attract and hold not only the substrate S (the first object) but also the mask M (the second object) located below the substrate S. I do.

  In detail, in the first embodiment, the voltage applied to the electrostatic chuck 24 is controlled so that the substrate S (first object to be suctioned) placed on the lower side in the vertical direction is first suctioned by the electrostatic chuck 24. Hold. Then, the voltage applied to the electrostatic chuck 24 to which the substrate S (the first object to be attracted) is adsorbed is controlled again, so that the lower side of the substrate S (opposite to the electrostatic chuck 24 across the substrate S). Side), the mask M (the second object) is further attracted and held over the substrate S (the first object) by using the electrostatic chuck 24.

  In this manner, in the step of using the electrostatic chuck 24 to attract the mask M over the substrate S, a magnetic force generating means such as a magnet is used together. Specifically, a magnetic force generating unit 33 as a magnetic force generating means is installed above the electrostatic chuck 24 (the side opposite to the suction surface), and when the mask M is sucked over the substrate S by the electrostatic chuck 24, A part of the mask M is attracted by the magnetic force generator 33 so that the attracted part of the mask M becomes a starting point of the suction by the electrostatic chuck 24. In addition to the setting of the suction starting point, the magnetic force of the magnetic force generator 33 located above the electrostatic chuck 24 controls the suction of the mask M with respect to the electrostatic chuck 24 so as to guide and control. This will be described later with reference to FIGS.

  Although not shown in FIG. 2, by providing a cooling mechanism (for example, a cooling plate) for suppressing a rise in the temperature of the substrate S on the side opposite to the suction surface of the electrostatic chuck 24, the organic material deposited on the substrate S is provided. It is good also as a structure which suppresses the quality change and deterioration of.

  The evaporation source 25 includes a crucible (not shown) in which a deposition material to be formed on the substrate S is stored, a heater (not shown) for heating the crucible, and a deposition material until the evaporation rate from the evaporation source becomes constant. A shutter (not shown) for preventing scattering on the substrate is provided. The evaporation source 25 can have various configurations according to the application, such as a point evaporation source and a linear evaporation source.

  Although not shown in FIG. 2, the film forming apparatus 11 includes a film thickness monitor (not shown) for measuring the thickness of the film deposited on the substrate S and a film thickness calculation unit (not shown).

  A substrate Z actuator 26, a mask Z actuator 27, an electrostatic chuck Z actuator 28, a position adjustment mechanism 29, and the like are provided on the upper outside (atmosphere side) of the vacuum vessel 21. These actuators and position adjustment mechanisms are composed of, for example, a motor and a ball screw, or a motor and a linear guide. The substrate Z actuator 26 is a driving unit for moving the substrate support unit 22 up and down (moving in the Z direction). The mask Z actuator 27 is a driving unit that moves the mask support unit 23 up and down (moves in the Z direction). The electrostatic chuck Z actuator 28 is a driving unit for moving the electrostatic chuck 24 up and down (moving in the Z direction).

  In the first embodiment, the film forming apparatus 11 includes a magnetic force generation unit driving mechanism (not shown) for moving the magnetic force generation unit 33 up and down between the magnetic force application position and the retracted position.

  The position adjusting mechanism 29 is driving means for alignment of the electrostatic chuck 24. The position adjustment mechanism 29 causes the entire electrostatic chuck 24 to move in the X direction, the Y direction, and rotate θ with respect to the substrate support unit 22 and the mask support unit 23. In the first embodiment, the position for adjusting the relative position between the substrate S and the mask M is adjusted by adjusting the position of the electrostatic chuck 24 in the X, Y, and θ directions while the substrate S is being sucked.

  On the outer upper surface of the vacuum vessel 21, in addition to the above-described driving mechanism, an alignment mark for photographing alignment marks formed on the substrate S and the mask M through a transparent window provided on the upper face of the vacuum vessel 21. A camera 20 may be provided. In the first embodiment, the alignment camera 20 may be installed at a position corresponding to a diagonal line of the rectangular substrate S, the mask M, and the electrostatic chuck 24, or at a position corresponding to four rectangular corners.

  The alignment camera 20 installed in the film forming apparatus 11 of the first embodiment is a fine alignment camera used to adjust the relative position of the substrate S and the mask M with high accuracy, and has a view angle of A small but high resolution camera. The film forming apparatus 11 may include a rough alignment camera having a relatively wide viewing angle and a low resolution in addition to the fine alignment camera 20.

  The position adjusting mechanism 29 includes a substrate S (first object) and a mask based on the positional information of the substrate S (first object) and the mask M (second object) acquired by the alignment camera 20. Alignment for adjusting the position by relatively moving M (the second object) is performed.

The film forming apparatus 11 includes a control unit (not shown). The control unit has functions such as transport and alignment of the substrate S, control of the evaporation source 25, control of film formation, and the like. The control unit can be configured by, for example, a computer having a processor, a memory, a storage, an I / O, and the like. In this case, the function of the control unit is realized by the processor executing a program stored in the memory or the storage. As the computer, a general-purpose personal computer may be used, or an embedded computer or a PLC (Programmable Logic Controller) may be used. Some or all of the functions of the control unit may be configured by a circuit such as an ASIC or an FPGA. Further, a control unit may be provided for each film forming apparatus, and one control unit may be configured to control a plurality of film forming apparatuses.

<Electrostatic chuck system>
First Embodiment An electrostatic chuck system 30 according to a first embodiment will be described with reference to FIGS.

  FIG. 3 is a conceptual block diagram of the electrostatic chuck system 30 according to the first embodiment, and FIG. 4 is a schematic plan view of the electrostatic chuck 24.

  As shown in FIG. 3, the electrostatic chuck system 30 according to the first embodiment includes the electrostatic chuck 24, the voltage applying unit 31, the voltage control unit 32, the magnetic force generation unit 33, and the magnetic force control unit 35. Prepare.

  The voltage application unit 31 applies a voltage for generating an electrostatic attraction to the plurality of electrode units 241 to 249 of the electrostatic chuck 24.

  The voltage control unit 32 determines the magnitude of the voltage to be applied from the voltage application unit 31 to the plurality of electrode units and the timing of starting the application of the voltage in accordance with the progress of the suction process of the electrostatic chuck system 30 or the progress of the film formation process of the film deposition apparatus 11. , The voltage maintenance time, the order of voltage application, and the like. The voltage control unit 32 can independently control voltage application to the plurality of electrode units 241 to 249 of the electrostatic chuck 24 for each electrode unit. In the first embodiment, the voltage control unit 32 is configured separately from the control unit of the film forming apparatus 11. However, the present invention is not limited to this, and the voltage control unit 32 is integrated with the control unit of the film forming apparatus 11. Is also good.

  The electrostatic chuck 24 includes a plurality of electrode units 241 to 249 that generate an electrostatic attraction for adsorbing the object to be attracted (for example, the substrate S and the mask M) on the attracting surface. As shown in FIG. 4, the electrostatic chuck 24 according to the first embodiment includes a plurality of electrode units 241 to 249 along the longitudinal direction (Y direction) and / or the short direction (X direction) of the electrostatic chuck 24. Is provided.

  Each of the plurality of electrode units 241 to 249 includes an electrode pair 34 to which positive (first polarity) and negative (second polarity) voltages are applied to generate electrostatic attraction. Each electrode pair 34 includes a first electrode 341 to which a plus voltage is applied, and a second electrode 342 to which a minus voltage is applied.

  The first electrode 341 and the second electrode 342 each have a comb shape as shown in FIG. Each of the first electrode 341 and the second electrode 342 includes a plurality of comb teeth, and a base connected to the plurality of comb teeth. The bases of the first electrode 341 and the second electrode 342 supply a voltage to the comb teeth, and the plurality of comb teeth generate an electrostatic attraction with the object to be attracted. In one electrode part, each tooth of the comb tooth part of the first electrode 341 and each tooth of the comb tooth part of the second electrode 342 are alternately arranged and face each other. As described above, the comb-tooth portions of the first electrode 341 and the second electrode 342 are opposed to each other and interdigitated, so that the interval between the electrodes to which different voltages are applied can be narrowed, and a large inconvenience is caused. A uniform electric field can be formed, and the substrate S can be attracted by the gradient force.

  In the first embodiment, an example in which the first electrode 341 and the second electrode 342 of each of the electrode portions 241 to 249 of the electrostatic chuck 24 have a comb shape is described. It can have various shapes as long as an electrostatic attraction can be generated between the two.

The plurality of electrode units of the electrostatic chuck 24 according to the first embodiment function as a plurality of suction units. Although the electrostatic chuck 24 of the first embodiment has nine suction parts corresponding to the nine electrode parts 241 to 249 as shown in FIG. 4, the number of suction parts is not limited to this, and Various numbers can be set according to the accuracy required for controlling the suction.

  A plurality of suction portions of the electrostatic chuck 24 according to the first embodiment are provided in the longitudinal direction (Y-axis direction) and the short direction (X-axis direction) of the electrostatic chuck 24, but are not limited thereto. May be provided only in the longitudinal direction or the short direction. The plurality of suction units may be configured by physically having one plate having a plurality of electrode units, and by physically dividing each of the plurality of plates with one or more electrode units. It may be configured. For example, in the first embodiment illustrated in FIG. 4, each of the plurality of electrode units may be configured to correspond to each of the plurality of suction units, and some of the electrode units may correspond to one suction unit. May be configured.

  For example, by controlling the application of a voltage to the electrode units 241 to 249 by the voltage control unit 32, the substrate S is disposed in a direction (Y direction) that intersects with the suction progress direction (X direction) of the substrate S, as described later. The three electrode parts 241, 244, 247 can correspond to one suction part. That is, the three electrodes 241, 244, 247 can be independently controlled in voltage, but by controlling the three electrodes 241, 244, 247 to apply the same voltage, these three electrodes 241, 244, 247 are controlled. One electrode unit 241, 244, 247 can function as one suction unit. The specific physical structure and electric circuit structure for realizing the function of independently sucking the substrate in each of the plurality of suction portions is not limited to the configuration of the first embodiment.

<Magnetic force generator>
The electrostatic chuck system 30 of the first embodiment sets the starting point of the suction by the electrostatic chuck 24 when the object to be suctioned, for example, the mask M, is sucked over the substrate S by the electrostatic chuck 24, and To control the direction, a magnetic force generating unit 33 is provided above the electrostatic chuck 24 (the side opposite to the suction surface).

  FIG. 5 is a diagram for explaining the role of the magnetic force generation unit 33 in the mask M suction process by the electrostatic chuck 24. The magnetic force generation unit 33, the electrostatic chuck 24, the mask M as an object to be suctioned, and the like in the suction process. Are schematically shown. The substrate S as the first object to be attracted has already been attracted to the electrostatic chuck 24 by the voltage control described later.

  The magnetic force generating unit 33 disposed above the electrostatic chuck 24 is configured by a plurality of electromagnet modules corresponding to a plurality of regions partitioned in a plane parallel to the attraction surface of the electrostatic chuck 24. In the example of FIG. 5, the magnetic force generation unit 33 includes three electromagnet modules 33-corresponding to three regions partitioned along the short side direction (X direction) in a plane parallel to the suction surface of the electrostatic chuck 24. 1, 33-2 and 33-3. Each of the electromagnet modules 33-1, 33-2, and 33-3 can switch between a magnetic force generation state (ON) and a magnetic force non-generation state (OFF) by controlling the power supply by the magnetic force control unit 35. is there. The white arrow A schematically represents the magnitude of the magnetic force generated by the electromagnet module controlled to generate the magnetic force. In the first embodiment, as an electromagnet module, an electromagnet in which a magnetic force is generated (ON) when energized and a magnetic force is not generated (OFF) when energized is stopped is described, but the present invention is not limited thereto. Not done. The electromagnet module may be a permanent magnet type electromagnet (permanent electromagnet) that is in a state where no magnetic force is generated (OFF) when energized, and is in a state where magnetic force is generated (ON) when energized. In the process of adsorbing the mask M by the electrostatic chuck 24, the magnetic force of each of the electromagnet modules 33-1, 33-2, and 33-3 constituting the magnetic force generating unit 33 is arranged in the order of FIGS. Suction is performed while the occurrence state is sequentially controlled on / off.

The magnetic force generating unit 33 includes a magnetic force applying position at which a magnetic force can be applied to the mask M, and a retracted position farther from the mask M than the magnetic force applying position (a magnetic force small enough to prevent the mask M from being attracted or substantially applied). (Where no magnetic force acts).

  First, in a state where the magnetic force generating unit 33 is lowered from the retracted position to a magnetic force applying position at which a magnetic force can be applied to the mask M, one of the plurality of electromagnet modules constituting the magnetic force generating unit 33 (in the illustrated example, an electrostatic Power is supplied to the electromagnet module 33-1) located at one end side of the short side of the chuck 24 by the magnetic force control unit 35 to set the magnetic force generation state (ON), and to the remaining electromagnet modules 33-2 and 33-3. Is controlled so as to be in a state where no magnetic force is generated (OFF). FIG. 5A shows the state at this time, in which one end of the mask M corresponds to the position of the electromagnet module 33-1 controlled to the magnetic force generation state (ON), and the electrostatic chuck in which the substrate S is attracted. It is attracted to the 24 side by magnetic force. When a voltage at which the mask M can be attracted through the substrate S is applied to the electrostatic chuck 24 in accordance with the magnetic force control of the magnetic force generating unit 33, one end of the mask M attracted toward the electrostatic chuck 24 by the magnetic force At the side, adsorption starts first. That is, the starting point of the suction of the mask M by the electrostatic chuck 24 is set by the magnetic force control of the magnetic force generating unit 33.

  In this way, the starting point of the suction is set, and the mask M is first suctioned at the starting point. When the mask chucking voltage is applied to the electrostatic chuck 24, the mask M naturally moves to a portion adjacent to the suction starting point in the mask M. Adsorption will proceed.

  However, in the first embodiment, as the suction of the mask M progresses from the state of FIG. 5A in which the suction starting point is set, the plurality of electromagnet modules 33-1, 33-2, By controlling the magnetic force generation state of 33-3 to be sequentially changed, the guiding direction of the suction is more positively and precisely controlled.

  Specifically, one end of the mask M is attracted to the electrostatic chuck 24 side by the magnetic force generated by the electromagnet module 33-1 and the adsorption to the electrostatic chuck 24 starts from the position as a starting point (FIG. 5A). Then, the electromagnet module 33-2 located at the upper central portion of the electrostatic chuck 24 is controlled to a magnetic force generation state (ON), and the portion of the mask M corresponding to the electromagnet module 33-2 is electrostatically magnetized. Attraction is advanced by attracting to the chuck 24 side (FIG. 5B), and finally, the electromagnet module 33-3 located above the other end of the short side of the electrostatic chuck 24 is brought into a magnetic force generating state (ON). With the other end of the mask M being attracted toward the electrostatic chuck 24 by the magnetic force, the suction is advanced until the suction step of the mask M by the electrostatic chuck 24 is completed (FIG. 5C). .

  As described above, the magnetic force generating unit 33 performs the pulling operation of the mask M in parallel with the voltage capable of attracting the mask M applied to the electrostatic chuck 24, so that the mask M with respect to the electrostatic chuck 24 is Can be induced, and the direction of the suction can be more precisely controlled, so that wrinkling of the mask when the mask M is sucked can be more effectively suppressed.

  In the first embodiment, since the substrate S is made of a non-magnetic material and the mask M is made of a magnetic material, when a part of the plurality of electromagnet modules is brought into a magnetic force generating state for drawing the mask M, A magnetic circuit is not formed on the entire substrate S, and a part of the mask M corresponding to the position of the electromagnet module in the magnetic force generating state can be attracted by the magnetic force. In addition, since it is not necessary to operate the voltage applied to the electrostatic chuck 24 in order to draw a part of the mask M, the mask M can be moved without affecting the suction state of the substrate S that has already been sucked to the electrostatic chuck 24. A pulling operation can be performed. Further, the attraction force of the magnetic force generation unit 33 can be easily applied farther than the electrostatic attraction force of the electrostatic chuck 24, so that the mask M can be effectively attracted.

  In the first embodiment, the mask M is drawn to the electrostatic chuck 24 side, and the electromagnet module corresponding to the area where the mask M over the substrate S has been attracted to the electrostatic chuck 24 is again in a non-magnetized state ( OFF). However, the electromagnet module is maintained in the magnetic force generation state (ON) until the suction of the mask M over the entire surface of the electrostatic chuck 24 is completed, and when the suction of the mask M is completed over the entire surface, the plurality of electromagnet modules 33-1 and 33 are stopped. -2 and 33-3 may be collectively controlled to a state in which no magnetic force is generated (OFF).

  Further, the number of the electromagnet modules constituting the magnetic force generating unit 33 and the arrangement of the electromagnet modules in a plane parallel to the suction surface of the electrostatic chuck 24 are not limited to the above configuration. For example, the plurality of electromagnet modules may be arranged along the long side direction (second direction) of the electrostatic chuck 24 within a plane parallel to the suction surface of the electrostatic chuck 24, or may be arranged diagonally. You may.

<Suction method using electrostatic chuck system>
Hereinafter, a method of attracting the substrate S and the mask M to the electrostatic chuck 24 will be described with reference to FIGS.

  FIG. 6 shows a step of adsorbing the substrate S to the electrostatic chuck 24 (first adsorption step).

  In the first embodiment, the entire surface of the substrate S is not simultaneously attracted to the lower surface of the electrostatic chuck 24, but is sequentially attracted from one end to the other along the first side (short side) of the electrostatic chuck 24. Progresses. However, the present invention is not limited to this. For example, the suction of the substrate S may proceed from one diagonal corner of the electrostatic chuck 24 to another corner on the opposite side.

  In order for the substrate S to be sequentially sucked along the first side of the electrostatic chuck 24, a first voltage for sucking the substrate is applied to the plurality of electrode units 241 to 249 on the first side of the electrostatic chuck 24. The substrate support unit 22 may control the substrate S in a state where the distance between the electrostatic chuck 24 and the substrate S is gradually increased along the first side of the electrostatic chuck 24. The structure of the substrate support unit 22 and the elastic modulus of the elastic member constituting the substrate support unit 22 are set so as to be supported, and the timing of applying the first voltage to the plurality of electrode units 241 to 249 is controlled so as to be simultaneous. May be.

  FIG. 6 shows an example in which the substrate S is sequentially attracted to the electrostatic chuck 24 by controlling the voltage applied to the plurality of electrode units 241 to 249 of the electrostatic chuck 24. The three electrode portions 241, 244, and 247 arranged along the long side direction (Y direction) of the electrostatic chuck 24 function as the first suction portion 41, and the three electrode portions 242 at the center of the electrostatic chuck 24 , 245, 248 function as the second suction unit 42, and the remaining three electrode units 243, 246, 249 function as the third suction unit 43.

  First, as shown in FIG. 6A, the substrate S is carried into the vacuum vessel 21 of the film forming apparatus 11 and placed on the support of the substrate support unit 22. Thus, the substrate S is supported by the substrate support unit 22.

  Subsequently, the electrostatic chuck 24 descends and moves toward the substrate S supported by the support of the substrate support unit 22.

  When the electrostatic chuck 24 is sufficiently close to or in contact with the substrate S, the voltage control unit 32 moves from the electrode unit constituting the first suction unit 41 along the first side (short side) of the electrostatic chuck 24 to the third position. Control is performed such that the first voltage V1 is sequentially applied to the electrode units constituting the suction unit 43 in order.

That is, first, the first voltage is applied to the electrode part constituting the first suction part 41 (FIG. 6B).
Then, the first voltage is applied to the electrode part forming the second suction part 42 (FIG. 6C), and the first voltage is finally applied to the electrode part forming the third suction part 43. (FIG. 6D).

  The first voltage V <b> 1 is set to a voltage large enough to reliably attract the substrate S to the electrostatic chuck 24.

  Thereby, the suction of the substrate S to the electrostatic chuck 24 proceeds from the side corresponding to the first suction portion 41 of the substrate S to the side corresponding to the third suction portion 43 via the central portion of the substrate S. Then, the substrate S is attracted to the electrostatic chuck 24 flatly without any wrinkles remaining at the center (first adsorption step).

  At a predetermined point in time after the step of attracting the substrate S to the electrostatic chuck 24 (the first attracting step) is completed, the voltage control unit 32, as shown in FIG. The voltage applied to the units 241 to 249 is reduced from the first voltage V1 to a second voltage V2 smaller than the first voltage V1.

  The second voltage V2 is a suction maintaining voltage for maintaining the state in which the substrate S is sucked by the electrostatic chuck 24, and is a voltage lower than the first voltage V1 applied when the substrate S is sucked by the electrostatic chuck 24. It is. When the voltage applied to the electrostatic chuck 24 decreases to the second voltage V2, the amount of polarization charge induced in the substrate S also increases when the first voltage V1 is applied, as shown in FIG. After the substrate S is once attracted to the electrostatic chuck 24 by the first voltage V1, the substrate S is attracted to the electrostatic chuck 24 by applying a second voltage V2 lower than the first voltage V1. State can be maintained.

  As described above, after the voltage applied to the electrode units 241 to 249 of the electrostatic chuck 24 is reduced to the second voltage V2, the substrate S adsorbed on the electrostatic chuck 24 and the mask M supported by the mask support unit 23 are Adjust (align) the relative position.

  The magnetic force generating unit 33 may be held at the retracted position from the start of the suction of the substrate S by the electrostatic chuck 24 to the alignment of the substrate S. Thereby, the magnetic force from the magnetic force generation unit 33 does not substantially act on the mask M, and the suction and alignment of the substrate S can be performed without attracting the mask M.

  Subsequently, as shown in FIG. 7, the mask M is attracted to the electrostatic chuck 24 via the substrate S. In other words, the mask M is attracted to the electrostatic chuck 24 over the substrate S by attracting the mask M to the lower surface of the substrate S attracted to the electrostatic chuck 24.

  For this reason, first, the electrostatic chuck 24 on which the substrate S is attracted is lowered toward the mask M by the electrostatic chuck Z actuator 28. The electrostatic chuck 24 is lowered to a limit position where the electrostatic attraction due to the suction holding voltage (second voltage V2) applied to the electrostatic chuck 24 does not act on the mask M (FIG. 7A).

  With the electrostatic chuck 24 lowered to the limit position, the magnetic force generating unit 33 moves down from the retracted position and moves to the magnetic force applying position (FIG. 7B). With the magnetic force generation unit 33 moved to the magnetic force application position, the magnetic force control unit 35 controls the electromagnet module 33-1 above one end of the electrostatic chuck 24 to a magnetic force generation state (ON), and The corresponding one end portion of the mask M is pulled upward toward the electrostatic chuck 24. Thus, the starting point of the subsequent suction of the mask M to the electrostatic chuck 24 is set (suction step).

  Thus, in a state where one end side of the mask M is attracted by the magnetic force of the electromagnet module 33-1 of the magnetic force generating unit 33 and the starting point of the attraction is set, the voltage control unit 32 causes the first attraction unit 41 of the electrostatic chuck 24 to Control is performed so that the third voltage V3 is applied to the corresponding electrode units 241, 244, and 247 (FIG. 7C).

  The third voltage V3 is preferably higher than the second voltage V2 and is large enough to charge the mask M through the substrate S by electrostatic induction. As a result, the mask M is attracted to the electrostatic chuck 24 over the substrate S. In particular, since the mask M is closest to the electrostatic chuck 24 at the suction starting point of the mask M set by the electromagnet module 33-1 of the magnetic force generating unit 33, this portion is first attracted to the electrostatic chuck 24.

  However, the present invention is not limited to this, and the third voltage V3 may have the same magnitude as the second voltage V2. Even if the third voltage V3 is the same as the second voltage V2, as described above, the electrostatic chuck 24 or the substrate S and the mask are moved by the lowering of the electrostatic chuck 24 to the limit position and the suction of the mask M by the magnetic force generating unit 33. Since the relative distance between M and M is reduced, electrostatic induction can also be caused on the mask M by the polarization charge electrostatically induced on the substrate S, and the mask M can be attracted to the electrostatic chuck 24 over the substrate S. A degree of electrostatic attraction is obtained.

  The third voltage V3 may be smaller than the first voltage V1, or may be as large as the first voltage V1 in consideration of shortening of the process time (Tact).

  After the mask M is attracted by the magnetic force generation unit 33 and a predetermined voltage is applied to the electrode units 241 to 249 of the electrostatic chuck 24 by the voltage control unit 32, the electrostatic chuck 24 on which the substrate S is attracted is moved to the electrostatic chuck Z. The actuator 28 may be further lowered toward the mask M. Thereby, the relative distance between the substrate S and the mask M can be reduced, and the suction of the mask M can be promoted. At this time, the magnetic force generator 33 may be further lowered together with the electrostatic chuck 24.

  When the attraction is started and the attraction of the area of the mask M corresponding to the electromagnet module 33-1 is completed, subsequently, the electromagnet module 33-2 above the central portion of the adjacent electrostatic chuck 24, and the other of the electrostatic chuck 24 By sequentially controlling the electromagnet modules 33-3 above the end sides to a magnetic force generating state (ON), the central portion of the mask M and the other end of the mask M corresponding to each of the electromagnet modules are sequentially moved to the electrostatic chuck 24. (FIG. 7D, FIG. 7E).

  In accordance with the sequential magnetic force control of each electromagnet module of the magnetic force generation unit 33, the voltage control unit 32 configures the second suction unit 42 corresponding to the mask M suction position of the electrostatic chuck 24 with the third voltage V3. The voltage is sequentially applied to the electrode units 242, 245, 248 and the electrode units 243, 246, 249 constituting the third suction unit 43.

  That is, the second suction of the electrostatic chuck 24 corresponding to the position of the electromagnet module 33-2 is synchronized with the timing at which the electromagnet module 33-2 above the center of the electrostatic chuck 24 is controlled to the magnetic force generation state (ON). A timing at which the third voltage V3 is applied to the electrode part constituting the part 42 (FIG. 7D), and the electromagnet module 33-3 above the other end of the electrostatic chuck 24 is controlled to a magnetic force generation state (ON). In accordance with the control, control is performed so that the third voltage V3 is applied to the electrode part constituting the third suction part 43 of the electrostatic chuck 24 corresponding to the position of the electromagnet module 33-3 (FIG. 7E).

Thus, the suction of the mask M to the electrostatic chuck 24 is performed from the side corresponding to the first suction portion 41 of the mask M, which is the starting point of the suction of the mask M, via the central portion of the mask M, to the third suction portion 43. The mask M advances toward the side (the suction of the mask M proceeds in the X direction), and the mask M is flatly sucked to the electrostatic chuck 24 without leaving a wrinkle in the center (second suction step).

  The present invention is not limited to the first embodiment shown in FIG. 7, and for example, the third voltage V3 may be simultaneously applied to the entire electrostatic chuck 24. Since the suction starting point of the mask M is already set by the electromagnet module 33-1 of the magnetic force generating unit 33, even if the third voltage V3 is applied to the entire electrostatic chuck 24 at the same time, the mask M closest to the electrostatic chuck 24 As the magnetic force is sequentially controlled at the start point of the magnetic force generation, the remaining electromagnet modules 33-2 and 33-3 of the magnetic force generation unit 33 are sequentially controlled to the magnetic force generation state (ON). Are successively drawn toward the electrostatic chuck 24, so that the suction of the mask M is sequentially performed along the first side, and it is possible to suppress the wrinkles from remaining on the mask M after the suction is completed.

  In this manner, after the entire mask M is attracted to the electrostatic chuck 24 across the substrate S by the electrostatic attractive force of the electrostatic chuck 24, all the magnetic force generation states of the electromagnet modules constituting the magnetic force generation unit 33 are turned off. To raise the magnetic force generating unit 33 to the retracted position (FIG. 7F). Even after the electromagnet module constituting the magnetic force generating unit 33 is turned off in the state where no magnetic force is generated and rises to the retracted position, the mask M can stably maintain the attracted state by the electrostatic attraction by the electrostatic chuck 24.

  The present invention is not limited to this, and the magnetic force generating unit 33 may raise the mask M to the retreat position at an arbitrary timing as long as the starting point of the suction of the mask M is sucked by the electrostatic attraction of the electrostatic chuck 24. . Further, even after the entire mask M is attracted to the electrostatic chuck 24 with the substrate S sandwiched therebetween by the electrostatic attractive force of the electrostatic chuck 24, the magnetic force generating unit 33 is not moved to the retracted position, but remains at the magnetic force applying position. It may be.

  According to the first embodiment described above, the magnetic force generating unit 33 is configured by a plurality of electromagnet modules arranged so as to divide a plane parallel to the suction surface of the electrostatic chuck 24 into a plurality of sections. In the mask attraction step of attracting the mask M to the electrostatic chuck 24 over the substrate S, a part of the mask M is attracted by the magnetic force generated by the magnetic force generating part 33 to form a starting point of the attraction of the mask M. The magnetic force generation state of the plurality of electromagnet modules constituting the magnetic force generation unit 33 is sequentially controlled to be ON along the suction direction of the mask M, so that the suction position of the mask M is sequentially moved while the electrostatic chuck 24 is moved. A mask suction voltage is applied. The mask M is sequentially attracted to the electrostatic chuck 24 from the set attracting start point. Thereby, the mask M can be attracted to the electrostatic chuck 24 over the substrate S without leaving wrinkles.

<Deposition process>
Hereinafter, a film forming method employing the adsorption method according to the first embodiment will be described.

  With the mask M placed on the mask support unit 23 in the vacuum chamber 21, the substrate S is carried into the vacuum chamber 21 of the film forming apparatus 11 by the transfer robot 14 in the transfer chamber 13.

  The hand of the transfer robot 14 that has entered the vacuum vessel 21 places the substrate S on the support of the substrate support unit 22.

  Subsequently, after the electrostatic chuck 24 descends toward the substrate S and sufficiently approaches or comes into contact with the substrate S, the first voltage V1 is applied to the electrostatic chuck 24 to attract the substrate S.

After the attraction of the substrate to the electrostatic chuck 24 is completed, the voltage applied to the electrostatic chuck 24 is reduced from the first voltage V1 to the second voltage V2. Even if the voltage applied to the electrostatic chuck 24 is reduced to the second voltage V2, the suction state of the substrate S by the electrostatic chuck 24 can be maintained in the subsequent steps.

  In a state where the substrate S is attracted to the electrostatic chuck 24, the substrate S is lowered toward the mask M in order to measure a relative displacement of the substrate S with respect to the mask M. In another embodiment of the present invention, in order to surely prevent the substrate S from dropping from the electrostatic chuck 24 in the process of lowering the substrate S adsorbed on the electrostatic chuck 24, the lowering process of the substrate S is performed. After the completion (that is, immediately before the start of an alignment process described later), the voltage applied to the electrostatic chuck 24 may be reduced to the second voltage V2.

  When the substrate S is lowered to the measurement position, the alignment camera 20 photographs the alignment marks formed on the substrate S and the mask M, and measures the relative displacement between the substrate S and the mask M. In another embodiment of the present invention, in order to further improve the accuracy of the measurement process of the relative position between the substrate S and the mask M, the electrostatic chuck 24 is completed after the measurement process for alignment is completed (during the alignment process). May be reduced to the second voltage.

  As a result of the measurement, when it is determined that the relative displacement of the substrate S with respect to the mask M exceeds the threshold value, the substrate S that has been attracted to the electrostatic chuck 24 is moved in the horizontal plane (in the XYθ direction), and Is aligned (aligned) with respect to the mask M. In another embodiment of the present invention, the voltage applied to the electrostatic chuck 24 may be reduced to the second voltage V2 after such a position adjustment process is completed. Thereby, accuracy can be further improved over the entire alignment process (relative position measurement and position adjustment).

  After the alignment step, the electrostatic chuck 24 is lowered toward the mask M and moved to the limit position. At the limit position, the mask M is not charged by the electrostatic chuck 24 to which the second voltage is applied, and the electrostatic attraction of the electrostatic chuck 24 does not substantially act on the mask M. Therefore, an unintended position of the mask M is prevented from being attracted to the electrostatic chuck 24 by the electrostatic attraction.

  In such a state, the magnetic force generator 33 is moved down to the magnetic force application position by lowering. When the magnetic force generating unit 33 comes to the magnetic force applying position, one of the plurality of electromagnet modules constituting the magnetic force generating unit 33 (for example, the electromagnet module 33-1 located at one end of the short side of the electrostatic chuck 24) is removed. The magnetic force control unit 35 sets the magnetic force generation state (ON). A portion on one end side of the mask M corresponding to the position of the electromagnet module 33-1 is pulled upward by magnetic force and is attracted to the electrostatic chuck 24 side, thereby forming a starting point of the suction of the mask M.

  In this state, the plurality of electromagnet modules 33-2 and 33-3 constituting the magnetic force generating unit 33 are sequentially turned on (ON) along the suction direction of the mask M (the short side direction of the substrate S, the X direction). And the suction position of the mask M is sequentially moved. The third voltage V3 is applied to the entire electrode portion of the electrostatic chuck 24 in accordance with the sequential magnetic force control of the plurality of electromagnet modules, or the second voltage V3 is applied from the electrode portion forming the first suction portion corresponding to the suction start point of the mask M to the second voltage. The third voltage V3 is sequentially applied to the electrode part forming the suction part and the electrode part forming the third suction part. As a result, the portions of the mask M corresponding to the first to third suction portions are sequentially suctioned to the electrostatic chuck 24 over the substrate S. Since the suction of the mask M is sequentially performed from the above-described suction starting point, the mask M is sucked to the electrostatic chuck 24 without wrinkles. As described above, after the starting point of the suction of the mask M is formed, the electrostatic chuck 24 on which the substrate S has been sucked may be further lowered toward the mask M by the electrostatic chuck Z actuator 28.

  After the entire mask M is attracted to the electrostatic chuck 24 by the application of the third voltage V3, the magnetic force generating unit 33 is moved up from the magnetic force application position to the retracted position.

  Thereafter, the voltage applied to the electrode portions 241 to 249 of the electrostatic chuck 24 is reduced to a fourth voltage V4 that can maintain a state where the substrate S and the mask M are attracted to the electrostatic chuck 24. Thus, the time required to separate the substrate S and the mask M from the electrostatic chuck 24 after the completion of the film forming process can be reduced.

  Subsequently, the shutter of the evaporation source 25 is opened, and the evaporation material is evaporated on the substrate S via the mask M.

  After vapor deposition to a desired thickness, the voltage applied to the electrode portions 241 to 249 of the electrostatic chuck 24 is reduced to the fifth voltage V5 to separate the mask M, and only the substrate S is attracted to the electrostatic chuck 24 Then, the substrate S is raised by the electrostatic chuck Z actuator 28.

  Subsequently, the hand of the transfer robot 14 enters the vacuum vessel 21 of the film forming apparatus 11, and applies zero (0) or reverse polarity voltage to the electrode units 241 to 249 of the electrostatic chuck 24. Is separated from the substrate S, and the electrostatic chuck 24 is raised. Thereafter, the substrate S on which the vapor deposition has been completed is carried out of the vacuum vessel 21 by the transfer robot 14.

  In the above description, the film forming apparatus 11 has a configuration of a so-called upward evaporation method (deposition up) in which the film is formed in a state where the film forming surface of the substrate S faces vertically downward. The configuration is not limited to this, and the substrate S is disposed in a state where the substrate S stands upright on the side surface of the vacuum vessel 21, and the film is formed in a state where the film forming surface of the substrate S is parallel to the direction of gravity. Is also good.

<Electronic device manufacturing method>
Next, an example of a method for manufacturing an electronic device using the film forming apparatus of Embodiment 1 will be described. Hereinafter, a configuration and a manufacturing method of an organic EL display device will be described as an example of an electronic device.

  First, an organic EL display device to be manufactured will be described. FIG. 8A shows an overall view of the organic EL display device 60, and FIG. 8B shows a cross-sectional structure of one pixel.

  As shown in FIG. 8A, in a display area 61 of the organic EL display device 60, a plurality of pixels 62 having a plurality of light emitting elements are arranged in a matrix. Although details will be described later, each of the light-emitting elements has a structure including an organic layer sandwiched between a pair of electrodes. Here, the pixel refers to a minimum unit capable of displaying a desired color in the display area 61. In the case of the organic EL display device according to the first embodiment, the pixel 62 is configured by a combination of the first light emitting element 62R, the second light emitting element 62G, and the third light emitting element 62B that emit light different from each other. The pixel 62 is often formed of a combination of a red light emitting element, a green light emitting element, and a blue light emitting element, but may be a combination of a yellow light emitting element, a cyan light emitting element, and a white light emitting element. Not restricted.

FIG. 8B is a schematic partial cross-sectional view taken along a line AB in FIG. 8A. The pixel 62 includes, on a substrate 63, an organic EL element including an anode 64, a hole transport layer 65, one of light-emitting layers 66R, 66G, and 66B, an electron transport layer 67, and a cathode 68. I have. Among these, the hole transport layer 65, the light emitting layers 66R, 66G, 66B, and the electron transport layer 67 correspond to the organic layers. In the first embodiment, the light emitting layer 66R is an organic EL layer emitting red light, the light emitting layer 66G is an organic EL layer emitting green light, and the light emitting layer 66B is an organic EL layer emitting blue light. The light-emitting layers 66R, 66G, and 66B are formed in patterns corresponding to light-emitting elements that emit red, green, and blue light, respectively (sometimes referred to as organic EL elements). The anode 64 is formed separately for each light emitting element. The hole transport layer 65, the electron transport layer 67, and the cathode 68 may be formed in common for the plurality of light emitting elements 62R, 62G, 62B, or may be formed for each light emitting element. In order to prevent the anode 64 and the cathode 68 from being short-circuited by foreign matter, the anode 64
An insulating layer 69 is provided between them. Further, since the organic EL layer is deteriorated by moisture or oxygen, a protective layer 70 for protecting the organic EL element from moisture or oxygen is provided.

  In FIG. 8B, the hole transport layer 65 and the electron transport layer 67 are shown as one layer. However, depending on the structure of the organic EL display element, the hole transport layer 65 and the electron transport layer 67 are formed of a plurality of layers including a hole block layer and an electron block layer. May be done. Further, a hole injection layer having an energy band structure capable of smoothly injecting holes from the anode 64 to the hole transport layer 65 is provided between the anode 64 and the hole transport layer 65. It can also be formed. Similarly, an electron injection layer can be formed between the cathode 68 and the electron transport layer 67.

  Next, an example of a method for manufacturing an organic EL display device will be specifically described.

  First, a substrate (not shown) for driving an organic EL display device and a substrate 63 on which an anode 64 is formed are prepared.

  An acrylic resin is formed on the substrate 63 on which the anode 64 is formed by spin coating, and the acrylic resin is patterned by lithography so that an opening is formed in a portion where the anode 64 is formed, thereby forming an insulating layer 69. . This opening corresponds to a light emitting area where the light emitting element actually emits light.

  The substrate 63 on which the insulating layer 69 is patterned is carried into the first organic material film forming apparatus, the substrate is held by an electrostatic chuck, and the hole transport layer 65 is formed on the anode 64 in the display area by a common layer. As a film. The hole transport layer 65 is formed by vacuum evaporation. Actually, since the hole transport layer 65 is formed in a size larger than the display area 61, a high-definition mask is unnecessary.

  Next, the substrate 63 on which the hole transport layer 65 is formed is carried into the second organic material film forming apparatus, and is held by the electrostatic chuck. The alignment between the substrate and the mask is performed, the substrate is placed on the mask, and a red light emitting layer 66R is formed on a portion of the substrate 63 where the red light emitting element is arranged.

  Similarly to the formation of the light emitting layer 66R, the third organic material film forming apparatus forms the green light emitting layer 66G, and the fourth organic material film forming apparatus forms the blue light emitting layer 66B. . After the formation of the light emitting layers 66R, 66G, and 66B is completed, the electron transport layer 67 is formed on the entire display area 61 by the fifth film forming apparatus. The electron transport layer 67 is formed as a layer common to the three color light emitting layers 66R, 66G, and 66B.

  The substrate on which the electron transport layer 67 has been formed is moved to a metallic vapor deposition material film forming apparatus to form a cathode 68.

  According to the first embodiment, the substrate S and the mask M are attracted to and held by the electrostatic chuck 24, but when the mask M is attracted, the attracting starting point is formed by the magnetic force generating unit 33 and the magnetic force is controlled by the magnetic force generating unit 33. By actively controlling the traveling direction, the mask M is attracted to the electrostatic chuck 24 without wrinkling.

  Thereafter, the substrate is moved to a plasma CVD apparatus to form the protective layer 70, and the organic EL display device 60 is completed.

If the substrate 63 on which the insulating layer 69 is patterned is carried into a film forming apparatus and is exposed to an atmosphere containing moisture and oxygen until the film formation of the protective layer 70 is completed, the light emitting layer made of the organic EL material becomes It may be deteriorated by moisture or oxygen. Therefore, in Example 1,
Loading and unloading of substrates between the film forming apparatuses is performed under a vacuum atmosphere or an inert gas atmosphere.

  The first embodiment is an example of the present invention, and the present invention is not limited to the configuration of the first embodiment, and may be appropriately modified within the scope of the technical idea.

24: Electrostatic chuck 30: Electrostatic chuck system 31: Voltage applying unit 32: Voltage control unit 33: Magnetic force generation units 33-1, 33-2, 33-3: Electromagnet module 35: Magnetic force control unit

Claims (21)

An electrostatic chuck system for adsorbing an object to be adsorbed,
An electrostatic chuck that has an adsorption surface that adsorbs the object to be adsorbed and an electrode portion, and that causes the object to be adsorbed to be adsorbed to the adsorption surface by applying a voltage to the electrode portion;
A magnetic force generating unit disposed on the opposite side of the chucking surface with respect to the electrostatic chuck, wherein a surface parallel to the chucking surface is divided into a plurality of regions and arranged at positions corresponding to the plurality of regions. Magnetic force generating section having a plurality of electromagnet modules,
A magnetic force control unit that controls the magnetic force of each of the plurality of electromagnet modules;
An electrostatic chuck system comprising:   The magnetic force control unit sets the electromagnet module disposed at a position corresponding to a portion of the attracted object to be attracted to the electrostatic chuck to a state where a magnetic force is generated when the attracted object is attracted to the electrostatic chuck. The electrostatic chuck system according to claim 1, wherein the control is performed such that:   3. The electrostatic chuck system according to claim 1, wherein the magnetic force control unit controls each of the plurality of electromagnet modules to sequentially generate a magnetic force. 4.   4. The magnetic force control unit according to claim 3, wherein the plurality of electromagnet modules are controlled so that each of the plurality of electromagnet modules sequentially becomes a magnetic force generation state along a direction in which the object to be attracted is attracted to the electrostatic chuck. 5. An electrostatic chuck system as described.   The magnetic force generating unit is configured such that when the object to be attracted is attracted by the electrostatic chuck, the magnetic force control unit causes the magnetic force of the first electromagnet module to be in the first magnetic force generating state among the plurality of electromagnet modules, 5. The starting point at which the object to be attracted is attracted to the electrostatic chuck by drawing at least a part of the object to be attracted toward the electrostatic chuck. 6. 3. The electrostatic chuck system according to claim 1.   The magnetic force generating unit is configured to, among the plurality of electromagnet modules that sequentially enter the magnetic force generation state following the first electromagnet module under the control of the magnetic force control unit when the electrostatic chuck chucks the object to be attracted. The magnetic force of each of the other electromagnet modules sequentially attracts the other part of the object to be attracted toward the electrostatic chuck, thereby guiding the progress of the attraction in a predetermined direction. An electrostatic chuck system as described. A voltage application unit that applies a voltage to the electrode unit,
A first voltage for adsorbing the first object to be attracted to the electrostatic chuck; and a voltage for adsorbing the second object to be attracted to the electrostatic chuck across the first object to be adsorbed. The electrostatic chuck system according to any one of claims 1 to 6, wherein the second voltage is applied. A film forming apparatus for forming a film on a substrate via a mask,
An electrostatic chuck system for adsorbing the substrate, which is the first object, and the mask, which is the second object,
The film forming apparatus according to claim 1, wherein the electrostatic chuck system is the electrostatic chuck system according to claim 1. The electrostatic chuck system comprises:
After adsorbing the substrate on the electrostatic chuck, when adsorbing the mask on the electrostatic chuck with the substrate adsorbed on the electrostatic chuck interposed therebetween,
The magnetic force control unit draws at least a part of the mask toward the electrostatic chuck by the magnetic force of the first electromagnet module that is in the first magnetic force generating state among the plurality of electromagnet modules, so that the mask is Set the starting point to be attracted to the electrostatic chuck,
The magnetic force control unit causes the other portions of the mask to move toward the electrostatic chuck side by the magnetic force of each of the other electromagnet modules of the plurality of electromagnet modules that are sequentially magnetized after the first electromagnet module. By sequentially attracting, guide the progress of adsorption in a predetermined direction,
9. The film forming apparatus according to claim 8, wherein the suction of the mask by the electrostatic chuck is advanced in accordance with the suction traveling direction. A method for adsorbing an object to be adsorbed,
A first suction step of applying a first voltage to the electrode portion of the electrostatic chuck to cause the first object to be suctioned to be suctioned to the suction surface of the electrostatic chuck;
A second suction step of applying a second voltage that is the same as or different from the first voltage to the electrode unit, and causing the electrostatic chuck to hold the second suction object with the first suction object interposed therebetween;
Has,
The second adsorption step comprises:
A plurality of electromagnet modules arranged on the opposite side to the attraction surface with respect to the electrostatic chuck, a surface parallel to the attraction surface is divided into a plurality of regions, and arranged at positions corresponding to the plurality of regions. A suction step of drawing at least a part of the second object to be attracted toward the first object to be attracted by a magnetic force from a magnetic force generator having the same;
An adsorption step of applying the second voltage to the electrode portion while adsorbing the second object to be attracted in the suction step with the first object to be adsorbed, and adsorbing the second object to be adsorbed; ,
An adsorption method comprising:   The method according to claim 10, further comprising a step of controlling the plurality of electromagnet modules by a magnetic force control unit so as to sequentially generate a magnetic force.   The method according to claim 11, further comprising: controlling the plurality of electromagnet modules by a magnetic force control unit such that the plurality of electromagnet modules are sequentially brought into a magnetic force generation state along a direction in which the second object is attracted to the electrostatic chuck. Adsorption method.   The attraction step includes the step of causing at least a portion of the second object to be attracted to the first electromagnet module by the magnetic force of the first electromagnet module which is in the magnetic force generation state first by the control of the magnetic force control unit. The suction method according to claim 11, further comprising a step of setting a starting point at which the second suction object is attracted to the electrostatic chuck in the suction step by pulling the second suction object toward the suction object.   The attracting step further includes the second attracted state by the magnetic force of each of the other electromagnet modules of the plurality of electromagnet modules that are sequentially magnetized following the first electromagnet module under the control of the magnetic force control unit. 14. The adsorption method according to claim 13, further comprising a step of sequentially attracting another part of the body toward the first adsorbent body to guide the progress of the adsorption in the adsorption step in a predetermined direction.   The said 2nd adsorption | suction process is made to adsorb | suck the said 2nd to-be-adsorbed body by the said electrostatic chuck with the said 1st to-be-adsorbed object sandwiched between the said electrostatic chucks by the electrostatic force by the said electrostatic chuck. The adsorption method according to any one of the above. A film forming method for forming a deposition material on a substrate via a mask,
Loading a mask into the vacuum vessel;
Loading a substrate into the vacuum vessel,
A first suction step of applying a first voltage to an electrode portion of the electrostatic chuck to suck the substrate on a suction surface of the electrostatic chuck;
A second suction step of applying a second voltage that is the same as or different from the first voltage to the electrode unit, and holding the mask on the electrostatic chuck with the substrate interposed therebetween;
In the state where the substrate and the mask are attracted to the electrostatic chuck, a step of evaporating a vapor deposition material and forming a film of the vapor deposition material on the substrate via the mask,
Has,
The second adsorption step comprises:
A plurality of electromagnet modules arranged on the opposite side to the attraction surface with respect to the electrostatic chuck, a surface parallel to the attraction surface is divided into a plurality of regions, and arranged at positions corresponding to the plurality of regions. A suction step of drawing at least a part of the mask toward the substrate side by a magnetic force from a magnetic force generating unit having;
An adsorption step of applying the second voltage to the electrode portion while bringing the mask attracted in the suction step into contact with the substrate, and adsorbing the mask;
A film forming method comprising:   17. The film forming method according to claim 16, further comprising a step of controlling the electromagnet modules in the plurality of regions by a magnetic force control unit so as to sequentially generate a magnetic force.   18. The film forming method according to claim 17, further comprising a step of controlling each of the plurality of electromagnet modules by a magnetic force control unit so as to sequentially generate a magnetic force along a direction in which the mask is attracted to the electrostatic chuck.   The attraction step is to draw at least a part of the mask toward the substrate by the magnetic force of the first electromagnet module that is first in the magnetic force generation state among the plurality of electromagnet modules under the control of the magnetic force control unit. 19. The film forming method according to claim 17, further comprising: setting a starting point at which the mask is attracted to the electrostatic chuck in the attracting step.   The attraction step further includes, using the magnetic force of each of the other electromagnet modules of the plurality of electromagnet modules that sequentially enter the magnetic force generation state following the first electromagnet module under the control of the magnetic force control unit, the other of the mask is used. 20. The film forming method according to claim 19, further comprising a step of inducing the progress of the adsorption in the adsorption step in a predetermined direction by sequentially drawing the portions toward the substrate.   An electronic device manufacturing method, comprising: manufacturing an electronic device by using the film forming method according to claim 16.

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