KR20200014103A - Electrostatic chuk system, film formation apparatus, suction method, film formation method, and manufacturing method of electronic device - Google Patents

Abstract

An electrostatic chuck system of the present invention, which adsorbs an object to be adsorbed, includes: an electrostatic chuck having an adsorption surface adsorbing the object to be adsorbed and an electrode part; a potential difference applying part for applying a potential difference to the electrode part; and a magnetism generating part arranged on an opposite side surface of the adsorption surface of the electrostatic chuck. An area, which projects the magnetism generating part onto the adsorption surface, is smaller than an area of the adsorption surface.

Description

Electrostatic chuck system, film forming apparatus, adsorption method, film forming method and electronic device manufacturing method {ELECTROSTATIC CHUK SYSTEM, FILM FORMATION APPARATUS, SUCTION METHOD, FILM FORMATION METHOD, AND MANUFACTURING METHOD OF ELECTRONIC DEVICE

The present invention relates to an electrostatic chuck system, a film forming apparatus, an adsorption method, a film forming method and a manufacturing method of an electronic device.

In the manufacture of an organic EL display device (organic EL display), when the organic light emitting element (organic EL element; OLED) constituting the organic EL display device is formed, the vapor deposition material evaporated from the vapor deposition source of the film forming apparatus includes a pixel pattern. By depositing on a substrate through the formed mask, an organic material layer or a metal layer is formed.

In the deposition apparatus of the up-deposition method (depo-up), the deposition source is installed under the vacuum vessel of the deposition apparatus, the substrate is disposed on the upper portion of the vacuum vessel, the deposition is performed on the lower surface of the substrate. In the vacuum vessel of the film deposition apparatus of such an upward deposition method, since the substrate is held and supported only by the substrate holder at its lower surface, the substrate is sag due to its own weight, which is one factor that lowers the deposition accuracy. It is becoming. Also in the film deposition apparatus of a system other than the upward deposition method, deflection due to the weight of the substrate may occur.

The technique which uses an electrostatic chuck as a method for reducing the deflection by self weight of a board | substrate is examined. That is, deflection of the substrate can be reduced by adsorbing the upper surface of the substrate with the electrostatic chuck over its entirety.

Patent Literature 1 (Patent Publication No. 2007-0010723) proposes a technique of adsorbing a substrate and a mask by an electrostatic chuck.

Patent Publication No. 2007-0010723

However, in the prior art, when the mask is adsorbed over the substrate by the electrostatic chuck, there is a problem that wrinkles remain in the mask after the adsorption.

An object of this invention is to adsorb | suck both a 1st to-be-adsorbed body and a 2nd to-be-adsorbed body to an electrostatic chuck favorably.

An electrostatic chuck system according to a first aspect of the present invention is an electrostatic chuck system for adsorbing an object to be adsorbed, the electrostatic chuck including an adsorption surface and an electrode portion for adsorbing the object to be adsorbed, and a potential difference for applying a potential difference to the electrode portion. And an application portion and a magnetic force generation portion disposed on an opposite side of the suction surface of the electrostatic chuck, wherein an area of the magnetic force generation portion projected onto the suction surface is smaller than the area of the suction surface.

A film forming apparatus according to the second aspect of the present invention. A film forming apparatus for forming a film on a substrate through a mask, the film forming apparatus comprising: an electrostatic chuck system for adsorbing a substrate, which is a first object to be absorbed, and a mask, which is a second object to be absorbed, wherein the electrostatic chuck system is provided in a first aspect of the present invention. It is characterized in that the electrostatic chuck system.

The adsorption method according to the third aspect of the present invention is a method for adsorbing an adsorbed body, comprising: a first adsorption step of applying a first potential difference to an electrode portion of an electrostatic chuck to adsorb the first adsorbed body, and the first adsorbed body; A suction step of sucking at least a portion of the second to-be-adsorbed body by magnetic force, and applying the second potential difference equal to or different from the first potential difference to the electrode part, while the second suction is sucked in the suction step. And a second adsorption step of contacting the object to be adsorbed with the first object to adsorb the second object onto the electrostatic chuck with the first object to be interposed therebetween.

The film forming method according to the fourth aspect of the present invention is a film forming method for depositing a deposition material on a substrate through a mask, the steps of bringing a mask into a vacuum vessel, bringing a substrate into the vacuum vessel, and an electrode of an electrostatic chuck A first adsorption step of applying a first potential difference to a part to adsorb the substrate to the electrostatic chuck, sucking at least a portion of the mask by magnetic force with the substrate interposed therebetween; A second adsorption step of contacting the mask sucked in the suction step with the substrate while applying a second potential difference equal to or different from one potential difference, and adsorbing the mask with the substrate interposed between the electrostatic chucks; Depositing deposition material on the substrate through the mask by evaporating the deposition material while the substrate and the mask are adsorbed on the chuck. It features.

A manufacturing method of an electronic device according to a fifth aspect of the present invention is characterized by manufacturing the electronic device using the film forming method according to the fourth aspect of the present invention.

According to the present invention, both the first and second objects to be adsorbed can be satisfactorily adsorbed by the electrostatic chuck so that no wrinkles remain.

1 is a schematic diagram of a part of an apparatus for manufacturing an electronic device.
2 is a schematic view of a film forming apparatus according to an embodiment of the present invention.
3A to 3C are conceptual and schematic views of an electrostatic chuck system according to an embodiment of the present invention.
4A to 4C are schematic diagrams showing the adsorption method of the substrate and the mask on the electrostatic chuck.
5 is a schematic diagram illustrating an electronic device.

EMBODIMENT OF THE INVENTION Hereinafter, preferred embodiment and Example of this invention are described with reference to drawings. However, the following embodiments and examples merely show preferred configurations of the present invention by way of example, and the scope of the present invention is not limited to these configurations. In addition, in the following description, the hardware configuration, software configuration, processing flow, manufacturing conditions, size, material, shape, etc. of an apparatus are in order to limit the scope of this invention to this unless there is particular notice. no.

This invention can be applied to the apparatus which deposits various materials on the surface of a board | substrate, and forms a film, and is applicable to the apparatus which forms the thin film (material layer) of a desired pattern by vacuum vapor deposition. Arbitrary materials, such as glass, a film of a polymeric material, a metal, etc. can be selected as a material of a board | substrate, For example, the board | substrate may be a board | substrate with which films, such as polyimide, were laminated | stacked on the glass substrate. Moreover, arbitrary materials, such as an organic material and a metallic material (metal, metal oxide, etc.), can also be selected as a vapor deposition material. In addition to the vacuum deposition apparatus described in the following description, the present invention can be applied to a film forming apparatus including a sputtering apparatus and a CVD (chemical vapor deposition) apparatus. The technique of this invention is applicable to manufacturing apparatuses, such as an organic electronic device (for example, organic light emitting element, thin film solar cell), an optical member, specifically ,. Among them, an apparatus for producing an organic light emitting device, which forms an organic light emitting device by evaporating a deposition material and depositing a substrate on a substrate through a mask, is one of preferred application examples of the present invention.

<Electronic device manufacturing apparatus>

1: is a top view which shows typically the structure of a part of manufacturing apparatus of an electronic device.

The manufacturing apparatus of FIG. 1 is used for manufacturing a display panel of an organic EL display device for a smartphone, for example. In the case of a display panel for a smartphone, for example, 4.5 generations of substrates (about 700 mm × about 900 mm), 6 generations of full size (about 1500 mm × about 1850 mm), or half cut size (about 1500 mm × After forming a film for formation of an organic EL element on a substrate of about 925 mm), the substrate is cut out and fabricated into a plurality of small size panels.

The electronic device manufacturing apparatus generally includes a plurality of cluster devices 1 and a relay device that connects the cluster devices 1.

The cluster device 1 includes a plurality of film forming apparatuses 11 for performing processing (for example, film forming) on the substrate S, a plurality of mask stock apparatuses 12 for storing the mask M before and after use, The conveyance chamber 13 arrange | positioned at the center is provided. As shown in FIG. 1, the transfer chamber 13 is connected to each of the plurality of film forming apparatuses 11 and the mask stock apparatus 12.

In the conveyance chamber 13, the conveyance robot 14 which conveys a board | substrate and a mask is arrange | positioned. The conveyance robot 14 conveys the board | substrate S to the film-forming apparatus 11 from the path chamber 15 of the relay apparatus arrange | positioned upstream. In addition, the transfer robot 14 conveys the mask M between the film forming apparatus 11 and the mask stock apparatus 12. The transfer robot 14 may be, for example, a robot having a structure in which a robot hand holding the substrate S or the mask M is mounted on the articulated arm.

In the film forming apparatus 11 (also called a deposition apparatus), the vapor deposition material stored in the vapor deposition source is heated and evaporated by a heater and deposited on the substrate through a mask. Transfer of the substrate S to the transfer robot 14, adjustment of the relative position of the substrate S and the mask M (alignment), fixation of the substrate S onto the mask M, and deposition (deposition) A series of film forming processes such as) is performed by the film forming apparatus 11.

In the mask stock device 12, a new mask and a used mask to be used in the film forming process in the film forming apparatus 11 are divided and stored in two cassettes. The transfer robot 14 transfers the used mask from the film forming apparatus 11 to the cassette of the mask stock device 12, and transfers the new mask housed in another cassette of the mask stock device 12 to the film forming apparatus 11. Return to

The cluster apparatus 1 includes a pass chamber 15 for transferring the substrate S from the upstream side to the cluster apparatus 1 in the flow direction of the substrate S, and a film forming process completed in the cluster apparatus 1. The buffer chamber 16 for transferring the board | substrate S to another cluster apparatus downstream is connected. The transfer robot 14 of the transfer chamber 13 receives the board | substrate S from the upstream path chamber 15, and is one of the film-forming apparatuses 11 in the said cluster apparatus 1 (for example, the film-forming apparatus 11a). Return to). In addition, the transfer robot 14 receives the substrate S on which the film forming process is completed in the cluster device 1 from one of the plurality of film forming apparatuses 11 (for example, the film forming apparatus 11b) and is connected to the downstream side. It returns to the buffer chamber 16.

The swing chamber 17 which changes the direction of a board | substrate is provided between the buffer chamber 16 and the path chamber 15. As shown in FIG. In the swinging chamber 17, a transfer robot 18 for receiving the substrate S from the buffer chamber 16 and rotating the substrate S 180 degrees to be transferred to the pass chamber 15 is provided. As a result, the direction of the substrate S becomes the same in the upstream cluster apparatus and the downstream cluster apparatus, thereby facilitating substrate processing.

The pass chamber 15, the buffer chamber 16, and the swing chamber 17 are so-called relay devices that connect the cluster devices, and the relay devices provided on the upstream and / or downstream side of the cluster device include a path chamber and a buffer room. And at least one of the swing rooms.

The film forming apparatus 11, the mask stock apparatus 12, the transfer chamber 13, the buffer chamber 16, the turning chamber 17, and the like are maintained in a high vacuum state during the manufacturing process of the organic light emitting element. The pass chamber 15 is usually kept in a low vacuum state, but may be kept in a high vacuum state as necessary.

In the present embodiment, the configuration of the electronic device manufacturing apparatus has been described with reference to FIG. 1, but the present invention is not limited thereto and may have other types of apparatuses or chambers, and arrangements between the apparatuses and chambers may vary. have.

Hereinafter, the specific structure of the film-forming apparatus 11 is demonstrated.

<Film forming device>

2 is a schematic view showing the configuration of the film forming apparatus 11. In the following description, the XYZ Cartesian coordinate system whose vertical direction is Z direction is used. When the substrate S is fixed in parallel with the horizontal plane (XY plane) during film formation, the short side direction (direction parallel to the short side) of the substrate S is the X direction and the long side direction (direction parallel to the long side) is the Y direction. It is done. In addition, the rotation angle around the Z axis is represented by θ.

The film forming apparatus 11 includes a vacuum container 21 held in a vacuum atmosphere or an inert gas atmosphere such as nitrogen gas, a substrate support unit 22 provided in the vacuum container 21, a mask support unit 23, And an electrostatic chuck 24 and a deposition source 25.

The board | substrate support unit 22 is also called a board | substrate holder as a means which receives and hold | maintains the board | substrate S which the conveyance robot 14 provided in the conveyance chamber 13 conveyed, and hold | maintains.

Under the substrate support unit 22, a mask support unit 23 is provided. The mask support unit 23 is also called a mask holder as a means for receiving and holding the mask M conveyed by the transport robot 14 installed in the transport chamber 13.

The mask M has an opening pattern corresponding to the thin film pattern to be formed on the substrate S, and is mounted on the mask support unit 23. In particular, a mask used to manufacture an organic EL element for a smartphone is a metal mask having a fine opening pattern formed thereon, also called a FMM (Fine Metal Mask).

Above the substrate support unit 22, an electrostatic chuck 24 for adsorbing and fixing the substrate by electrostatic attraction is provided. The electrostatic chuck 24 has a structure in which an electric circuit such as a metal electrode is embedded in a dielectric (eg, ceramic material) matrix. The electrostatic chuck 24 may be a coulomb force type electrostatic chuck, an Johnson-Label force type electrostatic chuck, or a gradient force type electrostatic chuck. The electrostatic chuck 24 is preferably an electrostatic chuck of the gradient force type. By making the electrostatic chuck 24 an electrostatic chuck of the gradient force type, even if the substrate S is an insulating substrate, it can be favorably adsorbed by the electrostatic chuck 24. For example, in the case where the electrostatic chuck 24 is a Coulomb force type electrostatic chuck, when a positive (+) and a negative (-) potential is applied to the metal electrode, the metal is attached to the adsorbed body such as the substrate S through the dielectric matrix. Polarization charges of opposite polarity to the electrode are induced, and the substrate S is sucked and fixed to the electrostatic chuck 24 by the electrostatic attraction between them. The electrostatic chuck 24 may be formed of one plate or may be formed to have a plurality of subplates. In addition, even when formed with one plate, a plurality of electric circuits may be included therein, such that the electrostatic force may be controlled according to a position in one plate.

In the present embodiment, as described later, not only the substrate S (the first to-be-adsorbed body) but also the mask M (the second to-be-adsorbed body) are held and held by the electrostatic chuck 24 before film formation.

That is, in this embodiment, the board | substrate S (the 1st adsorption body) placed under the perpendicular direction of the electrostatic chuck 24 is attracted and hold | maintained by the electrostatic chuck 24, and after that, the board | substrate S, 1st The mask M (the second to-be-adsorbed body) placed on the opposite side of the electrostatic chuck 24 with the to-be-adsorbed body interposed therebetween is adsorbed and held by the electrostatic chuck 24 over the substrate S (the first to-be-adsorbed body). In particular, when the mask M is attracted over the substrate S by the electrostatic chuck 24, a part of the mask M is attracted by the magnetic force generating portion, and the mask M attracted by the magnetic force of the magnetic generating portion. Is a starting point of adsorption of the mask M by the electrostatic chuck. This will be described later with reference to FIGS. 3 and 4.

Although not shown in FIG. 2, the organic matter deposited on the substrate S by providing a cooling mechanism (for example, a cooling plate) that suppresses the temperature rise of the substrate S on the side opposite to the adsorption surface of the electrostatic chuck 24. It is good also as a structure which suppresses deterioration and deterioration of a material.

 The deposition source 25 includes a crucible (not shown) in which the deposition material to be deposited on the substrate is accommodated, a heater (not shown) for heating the crucible, and the deposition material scatters onto the substrate until the evaporation rate from the deposition source is constant. Shutters (not shown), etc., to prevent them. The deposition source 25 may have various configurations depending on the use, such as a point deposition source or a linear deposition source.

Although not shown in FIG. 2, the film forming apparatus 11 includes a film thickness monitor (not shown) and a film thickness calculating unit (not shown) for measuring the film thickness deposited on the substrate.

A substrate Z actuator 26, a mask Z actuator 27, an electrostatic chuck Z actuator 28, a position adjusting mechanism 29, and the like are provided on the upper outer side (atmosphere side) of the vacuum container 21. These actuators and the position adjusting device are composed of, for example, a motor and a ball screw, or a motor and a linear guide. The board | substrate Z actuator 26 is a drive means for raising / lowering the board | substrate support unit 22 (Z direction movement). The mask Z actuator 27 is driving means for raising and lowering the mask support unit 23 (Z direction movement). The electrostatic chuck Z actuator 28 is driving means for raising and lowering (moving in the Z direction) the electrostatic chuck 24.

In one embodiment of the present invention, the film forming apparatus 11 includes a magnetic force generating portion elevating mechanism (not shown) for elevating the magnetic force generating portion 33 between the magnetic force applying position and the retracted position.

The position adjustment mechanism 29 is a drive means for alignment of the electrostatic chuck 24. The position adjustment mechanism 29 makes the entire electrostatic chuck 24 rotate with respect to the substrate support unit 22 and the mask support unit 23 in the X direction movement, the Y direction movement, and θ rotation. In this embodiment, in the state which adsorb | sucked the board | substrate S, alignment of the relative position of the board | substrate S and the mask M is performed by positioning the electrostatic chuck 24 in XY (theta) direction.

On the outer upper surface of the vacuum container 21, in addition to the above-described driving mechanism, an alignment camera for photographing the alignment marks formed on the substrate S and the mask M through a transparent window provided on the upper surface of the vacuum container 21 ( 20) may be provided. In the present embodiment, the alignment camera 20 is installed at a position corresponding to the diagonals of the rectangular substrate S, the mask M, and the electrostatic chuck 24 or at positions corresponding to the four corner portions of the rectangle. You may also do it.

The alignment camera 20 provided in the film-forming apparatus 11 of this embodiment is a fine alignment camera used to adjust the relative position of the board | substrate S and the mask M with high precision, although the viewing angle is narrow. It is a camera having a high resolution. The film forming apparatus 11 may include a rough alignment camera having a relatively wide viewing angle and a low resolution in addition to the fine alignment camera 20.

The position adjusting mechanism 29 is based on the positional information of the substrate S (the first to-be-adsorbed body) and the mask M (the second to-be-adsorbed body) obtained by the alignment camera 20. ) And the mask (M, second adsorbed body) are moved relative to each other to adjust the position.

The film forming apparatus 11 includes a controller (not shown). The control part has functions such as conveyance and alignment of the substrate S, control of the deposition source 25, control of film formation, and the like. The control unit can be configured by, for example, a computer having a processor, memory, storage, I / O, and the like. In this case, the function of the controller is realized by the processor executing a program stored in the memory or the storage. As the computer, a general-purpose personal computer may be used, or an embedded computer or a programmable logic controller (PLC) may be used. Alternatively, some or all of the functions of the controller may be configured by a circuit such as an ASIC or an FPGA. Moreover, a control part may be provided for each film-forming apparatus, and it may be comprised by one control part controlling a some film-forming apparatus.

Electrostatic Chuck System

The electrostatic chuck system 30 which concerns on this embodiment is demonstrated with reference to FIGS. 3A-3C.

FIG. 3A is a conceptual block diagram of the electrostatic chuck system 30 of the present embodiment, FIG. 3B is a schematic plan view of the electrostatic chuck 24, and FIG. 3C shows the electrostatic chuck 24 and the magnetic force generating portion 33. It is a typical top view.

The electrostatic chuck system 30 of this embodiment includes the electrostatic chuck 24, the potential difference application part 31, the potential difference control part 32, and the magnetic force generation part 33 as shown in FIG. 3A.

The potential difference applying unit 31 applies a potential difference for generating an electrostatic attraction to the electrode portion of the electrostatic chuck 24.

The potential difference control part 32 starts the application of the magnitude | size of the potential difference applied to the electrode part by the potential difference application part 31, and the application of the potential difference with the progress of the adsorption process of the electrostatic chuck system 30, or the film-forming process of the film-forming apparatus 11. The timing, the holding time of the potential difference, the order of applying the potential difference, and the like are controlled. The potential difference controller 32 may independently control the application of the potential difference to the plurality of sub-electrode parts 241 to 249 included in the electrode part of the electrostatic chuck 24 for each sub-electrode part. In the present embodiment, the potential difference control unit 32 is implemented separately from the control unit of the film forming apparatus 11, but the present invention is not limited to this, and may be integrated into the control unit of the film forming apparatus 11.

The electrostatic chuck 24 includes an electrode portion for generating an electrostatic adsorption force for adsorbing an object to be adsorbed (for example, the substrate S and the mask M) on an adsorption surface, and the electrode portion includes a plurality of sub-electrode portions 241 to 249. It may include. For example, as shown in FIG. 3B, the electrostatic chuck 24 of the present embodiment has a direction parallel to the long side of the electrostatic chuck 24 (Y direction) and / or a direction parallel to the short side of the electrostatic chuck 24. A plurality of sub electrode portions 241 to 249 divided along the (X direction) are included.

Each sub-electrode portion includes an electrode pair 34 to which a potential of positive (first polarity) and negative (second polarity) is applied to generate an electrostatic adsorption force. For example, each electrode pair 34 includes a first electrode 341 to which a positive potential is applied and a second electrode 342 to which a negative potential is applied.

The first electrode 341 and the second electrode 342 have a comb shape, respectively, as shown in FIG. 3B. For example, the first electrode 341 and the second electrode 342 each have a base to which a plurality of comb portions and a plurality of comb portions are connected. Bases of the electrodes 341 and 342 supply electric potentials to the plurality of comb portions, and the plurality of comb portions generate an electrostatic adsorption force between the objects to be absorbed. In one sub-electrode portion, each of the comb portions of the first electrode 341 is alternately disposed to face each of the comb portions of the second electrode 342. Thus, by making the structure of each comb part of each electrode 341 and 342 opposing and intertwining, the space | interval between the electrodes to which different electric potential was applied can be narrowed, and a large uneven electric field is formed and the board | substrate S is carried out by the gradient force. Can be adsorbed.

In the present embodiment, the electrodes 341 and 342 of the sub-electrode portions 241 to 249 of the electrostatic chuck 24 have been described as having a comb shape. However, the present invention is not limited thereto, and the present invention is not limited thereto. As long as it can generate an electrostatic attraction, it can have various shapes.

The electrostatic chuck 24 of this embodiment has a plurality of adsorption portions corresponding to the plurality of sub electrode portions. For example, as shown in FIG. 3B, the electrostatic chuck 24 of the present embodiment may have nine adsorption parts corresponding to nine sub-electrode parts 241 to 249, but is not limited thereto. In order to more precisely control the adsorption of), it may have a different number of adsorption portions.

The adsorption part may be installed to be divided into a long side direction (Y axis direction) and a short side direction (X axis direction) of the electrostatic chuck 24, but is not limited thereto. The suction part may be divided only into the long side direction or the short side direction of the electrostatic chuck 24. May be The plurality of adsorption parts may be implemented by physically one plate having a plurality of electrode parts, or each of the plurality of physically divided plates may be implemented by having one or more electrode parts. For example, in the embodiment illustrated in FIG. 3B, each of the plurality of adsorption parts may be implemented to correspond to each of the plurality of sub electrode parts, but one of the adsorption parts may be implemented to include a plurality of sub electrode parts.

That is, by controlling the application of the potential difference to the sub-electrode portions 241 to 249 by the potential difference controller 32, as described later, the direction crossing the adsorption progress direction (the X direction) of the substrate S (the Y direction). The three sub-electrode parts 241, 244, and 247 arranged in this manner may form one adsorption part. That is, each of the three sub-electrode portions 241, 244, and 247 can independently control the potential difference, but by controlling the potential difference to be applied to these three sub-electrode portions 241, 244, and 247 simultaneously, these three sub-electrodes are controlled. The electrode portions 241, 244, 247 can function as one adsorption portion. As long as the substrate adsorption can be performed independently of each of the plurality of adsorption units, the specific physical structure and the electrical circuit structure may be different.

<Magnetic Generator>

The electrostatic chuck system 30 of the present invention, in order to control the position of the starting point of the adsorption of the mask M when the adsorbed body, for example, the mask M over the substrate (S) with the electrostatic chuck 24, It includes a magnetic force generating portion 33 for applying a magnetic force to the mask (M). As shown in FIG. 3A, the magnetic force generating unit 33 is disposed on the opposite side of the suction surface of the electrostatic chuck 24 and may be implemented by a permanent magnet or an electromagnet.

As shown in FIG. 3C, the magnetic force generator 33 is preferably formed such that the area when the magnetic force generator 33 is projected onto the suction surface of the electrostatic chuck 24 is smaller than the area of the suction surface. . As a result, the magnetic force generating unit 33 applies the magnetic force only to a part of the mask M instead of applying the magnetic force to the entire mask M, and selectively selects only the portion to be the starting point for the adsorption of the mask M. To the side. That is, the corresponding part of the mask M is attracted by the magnetic force by the magnetic force generating part 33, and is deformed so as to be closer to the electrostatic chuck 24 than other parts. As a result, when a potential difference for adsorption of the mask M is applied to the electrostatic chuck 24, the corresponding portion of the mask M is first adsorbed to the electrostatic chuck 24. Thereafter, other portions of the mask M are sequentially adsorbed onto the electrostatic chuck 24 over the substrate S, so that the entire mask M is adsorbed without wrinkles.

The term " area when the magnetic force generating portion 33 is projected onto the suction surface of the electrostatic chuck 24 " refers to a process of adsorbing the mask M over the substrate S of the magnetic force generating portions 33. The area | region at which the part which generate | occur | produces the magnetic force which attracts the mask M when the mask M contacts the board | substrate S is projected on the adsorption surface of the electrostatic chuck 24 is said. Thus, for example, when the magnetic force generating portion 33 is composed of an electromagnet module having a plurality of regions partitioned in a plane parallel to the suction surface of the electrostatic chuck 24, and the mask M is in contact with the substrate S, When electric power is supplied only to the electromagnet modules in a part of the area to generate magnetic force, the area when the electromagnet module in the part of the area is projected onto the adsorption face of the electrostatic chuck 24 is smaller than the area of the adsorption face. You can do that.

More specifically, the magnetic force generating portion 33 is shorter than the length of the suction surface in the first direction parallel to the suction surface of the electrostatic chuck 24 (eg, the short side direction of the electrostatic chuck 24, the X direction). It is preferably formed. For example, the length in the first direction of the magnetic force generating portion 33 is 1/2 or less of the length of the suction surface in the first direction so that the position of the adsorption starting point of the mask M can be more precisely controlled. It is more preferable to set it as. The length in the 1st direction of the magnetic force generation part 33 here refers to the length of the part with the longest length in the 1st direction of the magnetic force generation part 33.

When the electrostatic chuck 24 has a plurality of adsorption parts, the magnetic force generation part 33 is preferably provided so as to be equal to or less than a length in the first direction of the adsorption part corresponding to the position of the magnetic force generation part 33. Do.

The magnetic force generating unit 33 is substantially the same as or equal to the length of the adsorption surface in the second direction (for example, the long side direction of the electrostatic chuck 24, the Y direction) parallel to the adsorption surface and intersecting the first direction. It is preferable that it is formed to be shorter. That is, when the length in the first direction of the magnetic force generating section 33 is shorter than the length in the first direction of the suction surface of the electrostatic chuck 24, as shown in FIG. 3C, the length in the second direction is shown. Can be substantially equal to or shorter than the length in the second direction of the adsorption face of the electrostatic chuck 24. When the length in the second direction of the magnetic force generating portion 33 is substantially the same as the length in the second direction of the suction surface, the starting point of the mask suction cannot be controlled in the second direction. Similarly, the origin of mask adsorption can be controlled in the first direction.

On the other hand, when the length in the second direction of the magnetic force generating portion 33 is smaller than the length in the second direction of the suction surface, the starting point of the mask suction is controlled not only in the first direction but also in the second direction. can do.

In the embodiment of the present invention shown in FIG. 3C, the magnetic force generating unit 33 has only described a configuration shorter than the length of the suction surface in the first direction, but the present invention is not limited thereto, and the first and second directions are not limited thereto. It may have various sizes and shapes as long as it is possible to control the starting point of the adsorption of the mask (M) in at least one direction.

For example, in the 1st direction which is a short side of an adsorption surface, it is substantially the same as the length of an adsorption surface, but may be shorter than the length of an adsorption surface in the 2nd direction which is a long side of an adsorption surface. As a result, the magnetic force generating unit 33 cannot control the starting point of mask adsorption in the first direction, but can control the starting point of mask adsorption in the second direction.

As shown in Figs. 3C (i) to (v), when the magnetic force generator 33 is projected onto the suction surface of the electrostatic chuck 24, the position thereof is arranged so as to correspond to the periphery of the electrostatic chuck 24. do. For example, the magnetic force generating portion 33 is disposed so as to correspond to the long side side edge portion of the electrostatic chuck 24. Thereby, the starting point of the mask adsorption becomes a part of the periphery of the electrostatic chuck 24, and when the mask M is adsorbed over the substrate S by the electrostatic chuck 24, the mask M is adsorbed without wrinkles. Can be. However, the present invention is not limited to the configuration shown in Figs. 3C (i) to (v), and the magnetic force generating unit 33 may be disposed at a position corresponding to the short edge side of the electrostatic chuck 24, for example May be disposed at a position other than the periphery, such as a position corresponding to the central portion of the electrostatic chuck 24 (for example, (vi) to (viii) in FIG. 3C).

The magnetic force generating unit 33 may be provided so as to be movable between a magnetic force applying position which is a position at which magnetic force can be applied to the mask M and a retracted position away from the mask M than the magnetic force applying position. While the magnetic force generating portion 33 is in the magnetic force application position, the portion corresponding to the position of the magnetic force generating portion 33 in the mask M is caused by the magnetic force from the magnetic force generating portion 33 side, That is, it is pulled toward the electrostatic chuck 24 and deformed so as to be closer to the lower surface of the substrate S adsorbed on the lower surface of the electrostatic chuck 24 than other portions of the mask M. As a result, the magnetic force generating unit 33 can control the starting point of the mask suction. When the magnetic force generating portion 33 is in the retracted position, the magnetic force acting on the mask M becomes relatively weak, and only a small magnetic force that does not suck the mask M is applied or substantially no magnetic force acts. Will not.

The magnetic force applying position and the retracted position of the magnetic force generating portion 33 can be such that the position away from each other in the vertical direction. For example, the magnetic force generating portion 33 is provided so as to be able to move up and down between the magnetic force application position and the retracted position. However, the present invention is not limited thereto, and the magnetic force applying position and the retracting position may be set apart from each other in a direction parallel to the electrostatic chuck suction surface. For example, the retraction position of the magnetic force generating portion 33 may be a position away from the upper surface of the electrostatic chuck 24 in the first direction (the long side direction of the electrostatic chuck 24, the Y direction) from the magnetic force application position.

<Adsorption method by electrostatic chuck system>

Hereinafter, a method of adsorbing the substrate S and the mask M on the electrostatic chuck 24 will be described with reference to FIGS. 4A to 4C.

4A shows a process (first adsorption step) of adsorbing the substrate S on the electrostatic chuck 24.

In this embodiment, as shown to FIG. 4A, the front surface of the board | substrate S is not attracted simultaneously to the lower surface of the electrostatic chuck 24, but the other end from one end along the 1st side (short side) of the electrostatic chuck 24 is carried out. Adsorption proceeds in sequence toward. However, the present invention is not limited thereto, and for example, the substrate may be adsorbed from one edge on the diagonal of the electrostatic chuck 24 toward the other edge opposite thereto.

In order to sequentially adsorb the substrate S along the first side of the electrostatic chuck 24, the order of applying the first potential difference for adsorbing the substrate to the plurality of sub-electrode portions 241 to 249 may be controlled. The first potential difference may be simultaneously applied to the plurality of sub-electrode portions, but the structure and the supporting force of the support portion of the substrate support unit 22 supporting the substrate S may be different.

FIG. 4A shows an embodiment in which the substrate S is sequentially adsorbed to the electrostatic chuck 24 through the control of the potential difference applied to the plurality of sub-electrode portions 241 to 249 of the electrostatic chuck 24. Here, three sub-electrode portions 241, 244, 247 arranged along the long side direction (Y direction) of the electrostatic chuck 24 form the first adsorption portion 41, and the central portion of the electrostatic chuck 24 is formed. Three sub-electrode parts 242, 245, and 248 form the second adsorption part 42, and the remaining three sub-electrode parts 243, 246, and 249 form the third adsorption part 43.

First, as shown to FIG. 4A, the board | substrate S is carried in the vacuum container 21 of the film-forming apparatus 11, and is mounted in the support part of the board | substrate support unit 22. As shown in FIG. As a result, the substrate S is supported by the substrate support unit 22.

Subsequently, the electrostatic chuck 24 descends to move toward the substrate S supported by the support of the substrate support unit 22.

The potential difference control unit 32 controls the first potential difference ΔV1 to be sequentially applied from the first adsorption unit 41 toward the third adsorption unit 43 along the first side (short side) of the electrostatic chuck 24. do.

That is, as shown in FIG. 4A, the first potential difference is first applied to the first adsorption part 41, and then the first potential difference is applied to the second adsorption part 42, and finally, the third adsorption part ( The first potential difference is applied to 43).

The first potential difference ΔV1 is set to a potential difference of a magnitude sufficient to securely adsorb the substrate S to the electrostatic chuck 24.

Thereby, the adsorption | suction of the board | substrate S to the electrostatic chuck 24 passes the 3rd adsorption part 43 side through the center part of the board | substrate S from the side corresponding to the 1st adsorption part 41 of the board | substrate S. Proceeding toward (that is, adsorption of the substrate S in the X direction proceeds), the substrate S can be adsorbed to the electrostatic chuck 24 flatly without leaving wrinkles in the center portion of the substrate.

At a predetermined point in time after the adsorption step (first adsorption step) of the substrate S to the electrostatic chuck 24 is completed, the potential difference control unit 32 moves the electrode portion of the electrostatic chuck 24 as shown in FIG. 4B. The potential difference applied to is lowered from the first potential difference ΔV1 to the second potential difference ΔV2 having a smaller magnitude than the first potential difference ΔV1.

The second potential difference ΔV2 is an adsorption holding potential difference for maintaining the substrate S in the state of being adsorbed by the electrostatic chuck 24. The second potential difference ΔV2 is a first potential difference applied when the substrate S is attracted to the electrostatic chuck 24. It is a potential difference of magnitude smaller than ΔV1). When the potential difference applied to the electrostatic chuck 24 is lowered to the second potential difference ΔV2, the polarization charge induced in the substrate S corresponding thereto is also applied to the first potential difference ΔV1 as shown in FIG. 4B. Although reduced compared to the case, once the substrate S is adsorbed to the electrostatic chuck 24 by the first potential difference ΔV1, the adsorption of the substrate is applied even if a second potential difference ΔV2 lower than the first potential difference ΔV1 is applied. State can be maintained.

Thus, after the potential difference applied to the electrode portion of the electrostatic chuck 24 is lowered to the second potential difference, the substrate S adsorbed by the electrostatic chuck 24 and the mask M supported by the mask support unit 23 are separated. Adjust (align) the relative position.

During the process from the start of adsorption of the substrate S by the electrostatic chuck 24 to the substrate alignment, the magnetic force generating portion 33 may be held at the retracted position. Thereby, adsorption | suction of board | substrate S and board | substrate alignment can be performed, without the magnetic force from the magnetic force generation part 33 acting substantially on the mask M, and not pulling the mask M. FIG.

Subsequently, as shown in FIG. 4C, the mask M is adsorbed to the electrostatic chuck 24 with the substrate S interposed therebetween. That is, the mask M is attracted to the lower surface of the substrate S adsorbed by the electrostatic chuck 24 by the electrostatic attraction.

To this end, the electrostatic chuck 24 on which the substrate S is adsorbed is first lowered toward the mask M by the electrostatic chuck Z actuator 28. The electrostatic chuck 24 descends to a limit position at which the electrostatic attraction due to the adsorption holding potential difference (second potential difference, ΔV2) applied to the electrostatic chuck 24 does not act on the mask M.

In the state where the electrostatic chuck 24 is lowered to the limit position, the magnetic force generating portion 33 descends from the retracted position and moves to the magnetic force application position. When the magnetic force generating portion 33 moves to the magnetic force application position, the magnetic force applied from the magnetic force generating portion 33 to the mask M becomes large enough to correspond to the position of the magnetic force generating portion 33 in the mask M. FIG. This magnetic force is pulled upward (suction step). Thereby, the starting point of the adsorption | suction of the mask M performed to the electrostatic chuck 24 formed hereafter is formed.

In the state where the portion of the mask M corresponding to the position of the magnetic force generating portion 33 is attracted by the magnetic force, the potential difference controller 32 causes the third potential difference ΔV3 to be applied to the electrode portion of the electrostatic chuck 24. To control.

The third potential difference ΔV3 is larger than the second potential difference ΔV2, and may be large enough to allow the mask M to be charged by the electrostatic induction over the substrate S. FIG. As a result, the mask M is attracted to the electrostatic chuck 24 over the substrate S. As shown in FIG. In particular, since the mask M is closest to the electrostatic chuck 24 at the adsorption starting point of the mask M formed by the magnetic force generating portion 33, this portion is first adsorbed to the electrostatic chuck 24.

However, the present invention is not limited thereto, and the third potential difference ΔV3 may have the same size as the second potential difference ΔV2. Even if the third potential difference ΔV3 has the same size as the second potential difference ΔV2, as described above, the mask M is lowered to the limit position of the electrostatic chuck 24 and the magnetic force generating portion 33 is used. Since the relative distance between the electrostatic chuck 24 or the substrate S and the mask M is narrowed by the suction, electrostatic induction can also occur in the mask M due to the polarization charges electrostatically induced on the substrate S, Adsorption force such that the mask M can be adsorbed onto the electrostatic chuck 24 over the substrate can be obtained.

The third potential difference ΔV3 may be smaller than the first potential difference ΔV1 or may be about the same as the first potential difference ΔV1 in consideration of the shortening of the process time Tact.

After the mask M is attracted by the magnetic force generating unit 33 and the potential difference control unit 32 applies a predetermined potential difference to the electrode portion of the electrostatic chuck 24, the electrostatic chuck which adsorbs the substrate S ( 24 may be further lowered toward the mask M by the electrostatic chuck Z actuator 28. Thereby, the relative distance between the board | substrate S and the mask M can be shortened, and adsorption | suction of the mask M can be promoted. At this time, the magnetic force generating unit 33 may be further lowered together with the electrostatic chuck 24.

In the mask adsorption step shown in FIG. 4C, the potential difference controller 32 sets the third potential difference ΔV3 along the first side so that the mask M can be adsorbed onto the lower surface of the substrate S without leaving wrinkles. 1 is sequentially applied from the adsorption part 41 toward the 3rd adsorption part 43.

That is, as shown in FIG. 4C, the third potential difference is first applied to the first adsorption part 41, and then the third potential difference is applied to the second adsorption part 42, and the third adsorption part 43 is applied. Finally, the third potential difference is controlled to be applied.

Thereby, the adsorption | suction of the mask M to the electrostatic chuck 24 makes the center part of the mask M from the side corresponding to the 1st adsorption part 41 of the mask M used as the starting point of the mask M adsorption | suction. It passes to the 3rd adsorption part 43 side (that is, adsorption | suction of the mask M advances in the X direction), and the mask M is flat without a wrinkle in the center part of the mask M, and is flat. May be adsorbed to the electrostatic chuck 24 (second adsorption step).

However, the present invention is not limited to the embodiment shown in Fig. 4C, and for example, the third potential difference ΔV3 may be applied simultaneously over the entire electrostatic chuck 24. That is, since the mask adsorption origin is already formed by the magnetic force generating portion 33, even if the third potential difference is applied to the entire electrostatic chuck 24 at the same time, adsorption is performed first at the mask adsorption origin closest to the electrostatic chuck 24. As a result, due to the natural deformation of the mask M, adsorption of the mask proceeds sequentially along the first side, and wrinkles do not remain in the absorbed mask M. FIG.

In this way, after the whole mask M is attracted by the electrostatic attraction of the electrostatic chuck 24 with the board | substrate S in between, the magnetic force generating part 33 will be raised to a retracted position, As a result, the magnetic force acting on the mask M is lowered. Even if the magnetic force generating portion 33 is raised to the retracted position to lower the magnetic force acting on the mask M, the mask M can be stably held by the electrostatic attraction by the electrostatic chuck 24.

However, the present invention is not limited thereto, and the magnetic force generating unit 33 may raise the retracted position at any time after the adsorption starting point of the mask M is absorbed by the electrostatic force of the electrostatic chuck 24. Further, even after the entire mask M is absorbed by the electrostatic force of the electrostatic chuck 24 with the substrate S interposed therebetween, the magnetic force generating portion 33 is disposed at the magnetic force applying position without moving to the retracted position. You can leave it alone.

According to the embodiment of the present invention described above, in the mask adsorption step of adsorbing the mask M to the electrostatic chuck 24 over the substrate S, the magnetic force generating portion having an area smaller than the adsorption surface of the electrostatic chuck 24 ( A portion of the mask M is sucked by 33) to form a starting point for mask adsorption, and then the mask is sequentially adsorbed from the formed adsorption start point by applying a potential difference for mask adsorption to the electrostatic chuck 24. Thereby, the mask M can be adsorb | sucked to the electrostatic chuck 24 over the board | substrate S so that wrinkles may not remain.

Deposition Process

Hereinafter, a film formation method employing the adsorption method according to the present embodiment will be described.

In the state where the mask M is placed on the mask support unit 23 in the vacuum vessel 21, the substrate is transferred into the vacuum vessel 21 of the film forming apparatus 11 by the transfer robot 14 of the transfer chamber 13. It is brought in.

The hand of the transfer robot 14 which enters into the vacuum container 21 mounts the board | substrate S on the support part of the board | substrate support unit 22. As shown in FIG.

Subsequently, after the electrostatic chuck 24 descends toward the substrate S to sufficiently approach or contact the substrate S, the first potential difference ΔV1 is applied to the electrostatic chuck 24 to adsorb the substrate S. .

After the adsorption of the substrate to the electrostatic chuck 24 is completed, the potential difference applied to the electrostatic chuck 24 is lowered from the first potential difference ΔV1 to the second potential difference ΔV2. Even if the potential difference applied to the electrostatic chuck 24 is lowered to the second potential difference ΔV 2, the adsorption state of the substrate by the electrostatic chuck 24 can be maintained in a subsequent step.

In the state where the substrate S is adsorbed by the electrostatic chuck 24, the substrate S is lowered toward the mask M in order to measure the relative displacement of the substrate S with respect to the mask M. In another embodiment of the present invention, in order to reliably prevent the substrate from falling off the electrostatic chuck 24 during the lowering process of the substrate adsorbed by the electrostatic chuck 24, after the lowering process of the substrate is completed (that is, described later) Immediately before the alignment process starts, the potential difference applied to the electrostatic chuck 24 may be lowered to the second potential difference ΔV2.

When the board | substrate S descend | falls to a measurement position, the alignment mark formed in the board | substrate S and the mask M is imaged with the alignment camera 20, and the relative position shift of a board | substrate and a mask is measured. In another embodiment of the present invention, in order to further increase the accuracy of the measurement process of the relative position of the substrate and the mask, the potential difference applied to the electrostatic chuck 24 after the measurement process for alignment is completed (during the alignment process) is secondly applied. It may be lowered by the potential difference.

As a result of the measurement, when the relative positional shift of the substrate with respect to the mask exceeds the threshold, the substrate S in the state adsorbed by the electrostatic chuck 24 is moved in the horizontal direction (XYθ direction) to position the substrate with respect to the mask. Adjust (align). In another embodiment of the present invention, the potential difference applied to the electrostatic chuck 24 after such a positioning process is completed may be lowered to the second potential difference ΔV2. This makes it possible to further increase the accuracy throughout the alignment process (relative position measurement and position adjustment).

After the alignment process, the electrostatic chuck 24 is lowered toward the mask M and moved to the limit position. In the limit position, the second potential difference applied to the electrostatic chuck 24 does not charge the mask M so that the electrostatic attraction does not substantially act on the mask M.

In this state, the magnetic force generating portion 33 is lowered to move to the magnetic force application position. When the magnetic force generating portion 33 comes to the magnetic force application position, the portion corresponding to the position of the magnetic force generating portion 33 of the mask M is upward by the magnetic force applied to the mask M from the magnetic force generating portion 33. Attracted. As a result, a starting point for mask adsorption is formed.

In this state, the third potential difference ΔV3 is sequentially applied to the entire electrostatic chuck or from the adsorption portion corresponding to the mask adsorption starting point, so that the corresponding portion of the mask M is adsorbed over the substrate S. FIG. Adsorption of the mask M proceeds sequentially from the adsorption origin mentioned above, and the mask M is adsorbed by the electrostatic chuck 24 without leaving wrinkles. As described above, after the starting point of mask adsorption is formed, the electrostatic chuck 24 on which the substrate S is adsorbed may be further lowered toward the mask M by the electrostatic chuck Z actuator 28.

After the entire mask M is adsorbed by the application of the third potential difference, the magnetic force generating portion 33 is lifted from the magnetic force application position and moved to the retracted position.

Thereafter, the potential difference applied to the electrode portion or the sub-electrode portion of the electrostatic chuck 24 is lowered to the fourth potential difference ΔV4, which is a potential difference capable of maintaining the substrate and the mask adsorbed on the electrostatic chuck 24. Through this, it is possible to shorten the time taken to separate the substrate S and the mask M from the electrostatic chuck 24 after completion of the film formation process.

Subsequently, the shutter of the deposition source 25 is opened and the deposition material is deposited on the substrate S through the mask.

After deposition to the desired thickness, the potential difference applied to the electrode portion or the sub-electrode portion of the electrostatic chuck 24 is lowered to the fifth potential difference ΔV5 to separate the mask M, and only the substrate is adsorbed on the electrostatic chuck 24. In this state, the substrate is raised by the electrostatic chuck Z actuator 28.

Subsequently, the hand of the transfer robot 14 enters into the vacuum vessel 21 of the film forming apparatus 11 and the zero or reverse polarity difference is applied to the electrode portion or sub-electrode portion of the electrostatic chuck 24 so that the electrostatic The chuck 24 is lifted off the substrate. Thereafter, the substrate on which deposition is completed is carried out from the vacuum container 21 by the transfer robot 14.

In the above description, the film forming apparatus 11 has a configuration of a so-called up-deposition (Depo-up) in which the film formation is performed in a state where the film formation surface of the substrate S faces downward in the vertical direction, but is not limited thereto. (S) may be arranged in a state perpendicular to the side of the vacuum vessel 21, and may be formed in a state where the film formation surface of the substrate S is parallel to the gravity direction.

<Method of manufacturing electronic device>

Next, an example of the manufacturing method of an electronic device using the film-forming apparatus of this embodiment is demonstrated. Hereinafter, the structure and manufacturing method of an organic electroluminescence display as an example of an electronic device are illustrated.

First, the organic EL display device to be manufactured will be described. FIG. 5A shows an overall view of the organic EL display device 60, and FIG. 5B shows a cross-sectional structure of one pixel.

As shown in Fig. 5A, in the display area 61 of the organic EL display device 60, a plurality of pixels 62 including a plurality of light emitting elements are arranged in a matrix form. Although details will be described later, each of the light emitting elements has a structure including an organic layer sandwiched between a pair of electrodes. In addition, the pixel here refers to the minimum unit which enables display of a desired color in the display area 61. In the organic EL display device according to the present embodiment, the pixel 62 is constituted by a combination of the first light emitting element 62R, the second light emitting element 62G, and the third light emitting element 62B which exhibit different light emission. It is. The pixel 62 is often composed of a combination of a red light emitting device, a green light emitting device, and a blue light emitting device. However, the pixel 62 may be a combination of a yellow light emitting device, a cyan light emitting device, and a white light emitting device. no.

FIG. 5B is a partial cross-sectional schematic diagram taken along the line A-B in FIG. 5A. The pixel 62 has an organic EL element having an anode 64, a hole transport layer 65, light emitting layers 66R, 66G, 66B, an electron transport layer 67, and a cathode 68 on a substrate 63. . Of these, the hole transport layer 65, the light emitting layers 66R, 66G, 66B, and the electron transport layer 67 correspond to organic layers. In the present embodiment, the light emitting layer 66R is an organic EL layer emitting red color, the light emitting layer 66G is an organic EL layer emitting green color, and the light emitting layer 66B is an organic EL layer emitting blue color. The light emitting layers 66R, 66G, and 66B are formed in patterns corresponding to light emitting devices (sometimes referred to as organic EL devices) that emit red, green, and blue light, respectively. In addition, the anode 64 is formed separately for each light emitting element. The hole transport layer 65, the electron transport layer 67, and the cathode 68 may be formed in common with the plurality of light emitting elements 62R, 62G, and 62B, or may be formed for each light emitting element. In addition, in order to prevent the anode 64 and the cathode 68 from being short-circuited by foreign matter, an insulating layer 69 is provided between the anodes 64. In addition, since the organic EL layer is degraded by moisture or oxygen, a protective layer 70 for protecting the organic EL element from moisture and oxygen is provided.

In FIG. 5B, the hole transport layer 65 and the electron transport layer 67 are illustrated as one layer. However, according to the structure of the organic EL display device, the hole transport layer 65 and the electron transport layer 67 may be formed of a plurality of layers including a hole block layer and an electron block layer. It may be. In addition, a hole injection layer having an energy band structure may be formed between the anode 64 and the hole transport layer 65 to facilitate the injection of holes from the anode 64 to the hole transport layer 65. . Similarly, an electron injection layer may be formed between the cathode 68 and the electron transport layer 67.

Next, an example of the manufacturing method of an organic electroluminescence display is demonstrated concretely.

First, a circuit (not shown) for driving an organic EL display device and a substrate 63 on which an anode 64 is formed are prepared.

An acrylic resin is formed by spin coating on the substrate 63 on which the anode 64 is formed, and the insulating layer 69 is formed by patterning the acrylic resin so as to form an opening in a portion where the anode 64 is formed by lithography. This opening corresponds to a light emitting region where the light emitting element actually emits light.

The substrate 63 patterned with the insulating layer 69 is loaded into the first organic material film deposition apparatus to hold the substrate with an electrostatic chuck, and the hole transport layer 65 is formed as a common layer on the anode 64 in the display area. . The hole transport layer 65 is formed by vacuum deposition. In reality, since the hole transport layer 65 is formed in a size larger than the display area 61, a high precision mask is not necessary.

Next, the substrate 63 formed up to the hole transport layer 65 is carried into the second organic material film forming apparatus and held by the electrostatic chuck. The substrate and the mask are aligned, the substrate is placed on the mask, and a light emitting layer 66R emitting red color is formed in a portion in which the element emitting red color of the substrate 63 is disposed.

Similar to the formation of the light emitting layer 66R, the light emitting layer 66G emitting green color is formed by the third organic material film forming apparatus, and further, the light emitting layer 66B emitting blue color is formed by the fourth organic material film forming apparatus. After the film formation of the light emitting layers 66R, 66G, 66B is completed, the electron transport layer 67 is formed over the entire display region 61 by the fifth organic material film forming apparatus. The electron transport layer 67 is formed as a layer common to the light emitting layers 66R, 66G, 66B of three colors.

The substrate 68 formed up to the electron transport layer 67 is moved to the metallic vapor deposition material deposition apparatus to form the cathode 68.

According to the present invention, the substrate and / or mask are adsorbed and held by the electrostatic chuck 24, but by generating the adsorption origin by the magnetic force generating portion 33 when the mask is adsorbed, the mask is free of wrinkles. ) Is adsorbed.

Subsequently, the protective layer 70 is formed by moving to a plasma CVD apparatus to complete the organic EL display device 60.

After the substrate 63 with the insulating layer 69 is patterned into the film forming apparatus and until the film formation of the protective layer 70 is completed, the light emitting layer made of an organic EL material is exposed when exposed to an atmosphere containing water or oxygen. There is a risk of deterioration due to moisture or oxygen. Therefore, in this example, the loading and unloading of the substrate between the film forming apparatuses is performed in a vacuum atmosphere or an inert gas atmosphere.

The said embodiment shows an example of this invention, This invention is not limited to the structure of the said Example, You may modify suitably within the range of the technical thought.

24: electrostatic chuck
30: electrostatic chuck system
31: potential difference application unit
32: potential difference controller
33: magnetic force generating unit

Claims (23)

An electrostatic chuck system for adsorbing an adsorbate,
An electrostatic chuck comprising an adsorption surface and an electrode portion for adsorbing the adsorbed body,
A potential difference applying unit for applying a potential difference to the electrode unit;
It includes a magnetic force generating unit disposed on the opposite side of the suction surface of the electrostatic chuck,
The area which projected the said magnetic force generation part on the said adsorption surface is smaller than the area of the said adsorption surface. The said magnetic force generating part is a length in the 1st direction parallel to the said adsorption surface, when projected to the said adsorption surface, is smaller than the length in the said 1st direction of the said adsorption surface. Electrostatic chuck system. The said magnetic force generation part is a length in the said 1st direction at the time of projecting on the said adsorption surface, The said magnetic force generation part is 1/2 or less of the length in the said 1st direction of the said adsorption surface, It is characterized by the above-mentioned. Electrostatic chuck system. The method of claim 2, wherein the electrostatic chuck has a plurality of adsorption portions divided in the first direction,
The magnetic force generating portion has a length in the first direction when projected onto the suction surface is equal to or less than a length in the first direction of the suction portion at a position corresponding to the magnetic force generating portion among the plurality of suction portions. Electrostatic chuck system, characterized in that. The said magnetic force generating part is a parallel direction with the said adsorption surface at the time of projecting on the said adsorption surface, The length in the 2nd direction which cross | intersects the said 1st direction is a 2nd direction of the said adsorption surface, The said magnetic force generating part of Claim 2 characterized by the above-mentioned. The electrostatic chuck system characterized by the following length. 6. The electrostatic force according to claim 5, wherein the magnetic force generating portion has a length in the second direction when projected onto the suction surface is 1/2 or less of a length in the second direction of the suction surface. Chuck system. The electrostatic chuck system according to claim 1, wherein the magnetic force generating portion is disposed at a position corresponding to a peripheral portion of the suction surface of the electrostatic chuck. The electrostatic chuck system according to claim 7, wherein the magnetic force generating portion is disposed at a position corresponding to the long edge side of the suction surface. The electrostatic chuck system of claim 1, wherein the potential difference applying unit applies a first potential difference for adsorbing a first object to be absorbed and a second potential difference for adsorbing a second object to be absorbed through the first object. . The magnetic force generating unit of claim 9, wherein the magnetic force generating unit is disposed between a magnetic force applying position for applying a magnetic force to the second absorbent body and a retracted position for applying a magnetic force weaker than a magnetic force applied from the magnetic force applying position to the second absorbent body. Electrostatic chuck system, characterized in that the installation is movable. A film forming apparatus for forming a film on a substrate through a mask,
An electrostatic chuck system for adsorbing a substrate, the first absorbent and a mask, the second absorbent;
The electrostatic chuck system is a film forming apparatus according to any one of claims 1 to 10. As a method for adsorbing an adsorbate,
A first adsorption step of applying a first potential difference to an electrode part of the electrostatic chuck to adsorb the first adsorbed body;
A suction step of sucking at least a portion of the second absorbent body by magnetic force with the first absorbent body therebetween;
While applying the second potential difference equal to or different from the first potential difference to the electrode portion, the second absorbent body sucked in the suction step is brought into contact with the first absorbent body so that the first absorbent body is attached to the electrostatic chuck. A second adsorption step of adsorbing the second adsorbed body in between
Adsorption method comprising a. The adsorption method according to claim 12, wherein the second adsorption step includes adsorption of the second to-be-adsorbed body with the first to-be-adsorbed body interposed between the first and the second to-be-adsorbed body by the electrostatic force by the electrostatic chuck. 13. The method of claim 12, wherein the second adsorption step comprises contacting the first to-be-adsorbed body from a portion sucked in the suctioning step of the second to-be-adsorbed body, and interposing the first to-be-adsorbed body between the electrostatic chucks. And the second adsorbent is adsorbed. The adsorption method according to claim 12, further comprising, after the second adsorption step, a magnetic force lowering step of lowering the magnetic force applied to the second adsorbed body than the magnetic force of the suction step. The method of claim 15
The suctioning step includes moving the magnetic force generating unit to a suction position capable of sucking at least a portion of the second object to be absorbed by a magnetic force,
The magnetic force lowering step includes the step of moving the magnetic force generating portion to a retracted position farther from the second suction target body than the suction position. The method of claim 12,
In the suctioning step, the second suction body is partially sucked. A film forming method for depositing a deposition material on a substrate through a mask,
Importing the mask into the vacuum vessel,
Importing a substrate into the vacuum vessel;
A first adsorption step of applying a first potential difference to an electrode portion of the electrostatic chuck to adsorb the substrate to the electrostatic chuck;
A suction step of sucking at least a portion of the mask by a magnetic force with the substrate interposed therebetween;
A second suctioning contact with the substrate by applying a second potential difference equal to or different from the first potential difference to the electrode portion to the substrate, and adsorbing the mask with the substrate sandwiched between the electrostatic chucks; Adsorption step,
And depositing the deposition material on the substrate through the mask by evaporating the deposition material while the substrate and the mask are adsorbed on the electrostatic chuck. 19. The method of claim 18, wherein the second adsorption step comprises contacting the substrate from the portion sucked in the suction step of the mask to adsorb the mask with the substrate sandwiched between the electrostatic chucks. Film formation method. 19. The method of claim 18, further comprising, after the second adsorption step, a magnetic force lowering step of lowering the magnetic force applied to the mask than the magnetic force of the suction step. The method of claim 20
The suctioning step includes moving a magnetic force generating portion to a suction position capable of sucking at least a portion of the mask by magnetic force,
The magnetic force lowering step includes the step of moving the magnetic force generating portion to a retracted position farther from the mask than the suction position. The method of claim 18
In the suctioning step, the mask is partially suctioned. The manufacturing method of an electronic device characterized by manufacturing an electronic device using the film-forming method in any one of Claims 18-22.

Images