KR102427823B1 - Electrostatic chuck system, film forming apparatus, adsorption process, film forming method and electronic device manufacturing method - Google Patents

Abstract

The electrostatic chuck system of the present invention is an electrostatic chuck system for adsorbing an adsorbent, the electrostatic chuck including an electrode part, a potential difference applying part for applying a potential difference to the electrode part of the electrostatic chuck, and a potential difference by the potential difference applying part a potential difference control unit for controlling application of A third potential difference for adsorbing the second adsorbed body is controlled to be sequentially applied to the electrode section with the first adsorbed body interposed therebetween, and the third potential difference is equal to or greater than the second potential difference.

Description

Electrostatic chuck system, film forming apparatus, adsorption method, film forming method and manufacturing method of electronic device

The present invention relates to an electrostatic chuck.

In the manufacture of an organic EL display device, an organic material layer or a metal layer is formed by depositing a deposition material evaporated from a deposition source of a film forming apparatus on a substrate through a mask on which a pixel pattern is formed.

In the film forming apparatus of the upward deposition method, the deposition source is installed below the vacuum vessel of the film forming apparatus, the substrate is disposed above the vacuum vessel, and deposition is performed on the lower surface of the substrate. In the vacuum container of the film forming apparatus of the upward deposition method, the lower surface of the substrate is held and supported by the substrate holder, and the sagging of the substrate due to the weight of the substrate is a factor of lowering the deposition accuracy.

Techniques using an electrostatic chuck have been studied as a method for reducing the sagging of the substrate due to its own weight. That is, an electrostatic chuck is installed on an upper portion of the support portion of the substrate holder, and a potential difference is applied to the electrostatic chuck while the electrostatic chuck is close to or in contact with the upper surface of the substrate. In this way, by inducing charges of opposite polarity to the surface of the substrate, the central portion of the substrate is pulled by the electrostatic attraction force of the electrostatic chuck, thereby reducing sagging of the substrate.

Patent Document 1 (Japanese Patent Publication No. 2016-539489) proposes a technique for adsorbing a mask while holding a substrate by an electrostatic chuck.

Japanese Patent Publication No. 2016-539489

An object of the present invention is to satisfactorily adsorb both the first adsorbed body and the second adsorbed body to the electrostatic chuck.

An electrostatic chuck system according to a first aspect of the present invention is an electrostatic chuck system for adsorbing an adsorbent, comprising: an electrostatic chuck including an electrode part; a potential difference applying part for applying a potential difference to the electrode part of the electrostatic chuck; and a potential difference control unit for controlling application of a potential difference by an applying unit, wherein the potential difference control unit includes a first potential difference for adsorbing a first adsorbed body to the electrostatic chuck, a second potential difference smaller than the first potential difference, and the A third potential difference for adsorbing a second adsorbed body is controlled so that the electrostatic chuck is sequentially applied to the electrode with the first adsorbed body interposed therebetween, and the third potential difference is greater than or equal to the second potential difference.

A film forming apparatus according to a second aspect of the present invention. A film forming apparatus for forming a film on a substrate through a mask, comprising an electrostatic chuck system for adsorbing a substrate as a first adsorbent and a mask as a second adsorbent, the electrostatic chuck system according to the first aspect of the present invention. It is characterized in that the electrostatic chuck system according to the.

An adsorption method according to a third aspect of the present invention is a method for adsorbing an adsorbent, comprising the steps of applying a first potential difference to an electrode part of an electrostatic chuck to adsorb a first adsorbent to the electrostatic chuck; applying a second potential difference smaller than the first potential difference; and applying a third potential difference equal to or greater than the second potential difference to the electrode part to adsorb the second adsorbed body to the electrostatic chuck with the first adsorbed body interposed therebetween. It is characterized in that it comprises a step.

A film formation method according to a fourth aspect of the present invention is a method of depositing a deposition material on a substrate through a mask, comprising the steps of loading the mask into a vacuum container, loading the substrate into the vacuum container, and an electrode portion of an electrostatic chuck. adsorbing the substrate to the electrostatic chuck by applying a first potential difference; applying a second potential difference smaller than the first potential difference to the electrode part; and a third potential difference greater than the second potential difference to the electrode part. adsorbing the mask to the electrostatic chuck with the substrate interposed therebetween; and evaporating the deposition material while the substrate and the mask are adsorbed to the electrostatic chuck to apply the deposition material to the substrate through the mask. It characterized in that it comprises the step of forming a film.

A method for manufacturing an electronic device according to a fifth aspect of the present invention is characterized in that the electronic device is manufactured using the film forming method according to the fourth aspect of the present invention.

According to the present invention, both the first adsorbed body and the second adsorbed body can be satisfactorily adsorbed by the electrostatic chuck.

BRIEF DESCRIPTION OF THE DRAWINGS It is a schematic diagram of a part of the manufacturing apparatus of an electronic device.
2 is a schematic diagram of a film forming apparatus according to an embodiment of the present invention.
3A to 3C are conceptual views and schematic diagrams of an electrostatic chuck system according to an embodiment of the present invention.
4A to 4D are schematic diagrams showing a sequence of adsorption and holding of the substrate and the mask to the electrostatic chuck.
5 is a graph illustrating a change in a potential difference applied to the electrostatic chuck.
It is a schematic diagram which shows an electronic device.

Hereinafter, preferred embodiments and examples of the present invention will be described with reference to the drawings. However, the following embodiments and examples are merely illustrative of preferred configurations of the present invention, and the scope of the present invention is not limited to these configurations. In addition, in the following description, the hardware configuration and software configuration of the device, processing flow, manufacturing conditions, size, material, shape, etc. are intended to limit the scope of the present invention to these unless specifically stated otherwise. not.

INDUSTRIAL APPLICABILITY The present invention is preferably applicable to an apparatus for forming a thin film (material layer) of a desired pattern on the surface of a substrate by vacuum deposition. As the material of the substrate, any material such as glass, polymer film, or metal can be selected, and as the vapor deposition material, any material such as organic material or metallic material (metal, metal oxide, etc.) can be selected. The technique of this invention is specifically applicable to manufacturing apparatuses, such as an organic electronic device (For example, organic electroluminescent display apparatus, a thin film solar cell), an optical member. Especially, in the manufacturing apparatus of an organic electroluminescent display, since an organic electroluminescent display element is formed by evaporating a vapor deposition material and depositing it on a board|substrate through a mask, it is one of the preferable application examples of this invention.

<Electronic device manufacturing apparatus>

BRIEF DESCRIPTION OF THE DRAWINGS It is a top view which shows typically the structure of a part of the manufacturing apparatus of an electronic device.

The manufacturing apparatus of FIG. 1 is used for manufacture of the display panel of the organic electroluminescent display for smartphones, for example. In the case of a display panel for a smartphone, for example, a substrate of the 4.5th generation (about 700 mm × about 900 mm), a full size (about 1500 mm × about 1850 mm) of the 6th generation, or a half-cut size (about 1500 mm × After film formation for formation of an organic EL element is performed on a substrate having a thickness of about 925 mm, the substrate is cut out to produce a plurality of small-sized panels.

An electronic device manufacturing apparatus generally includes a plurality of cluster apparatuses 1 and a relay device connecting between the cluster apparatuses 1 .

The cluster apparatus 1 includes a plurality of film forming apparatuses 11 for performing a process (eg, film formation) on a substrate S, a plurality of mask stock apparatuses 12 for accommodating masks before and after use, and at the center thereof. A transfer chamber 13 is provided.

In the transfer chamber 13 , a transfer robot 14 that transfers the substrate S between the plurality of film forming apparatuses 11 and transfers the mask between the film forming apparatus 11 and the mask stock apparatus 12 is installed. The transfer robot 14 may be, for example, a robot having a structure in which a robot hand holding the substrate S is mounted on an articulated arm.

In the film-forming apparatus 11 (also called a vapor deposition apparatus), the vapor deposition material accommodated in the vapor deposition source is heated and evaporated by a heater, and is vapor-deposited on the board|substrate through a mask. A series of film formation such as transfer of the substrate S with the transfer robot 14, adjustment (alignment) of the relative positions of the substrate S and the mask, fixing of the substrate S on the mask, and film formation (evaporation) The process is performed by a film forming apparatus.

In the mask stock apparatus 12 , a new mask and a used mask to be used in the film forming process in the film forming apparatus 11 are divided and stored in two cassettes. The transfer robot 14 transfers the used mask from the film forming apparatus 11 to a cassette of the mask stock apparatus 12 , and transfers a new mask stored in another cassette of the mask stock apparatus 12 to the film forming apparatus 11 . return to

The cluster device 1 has a pass chamber 15 for transferring the substrate S from the upstream side in the flow direction of the substrate S to the cluster device 1 , and the cluster device 1 has a film forming process completed. A buffer chamber 16 for transferring the substrate S to another cluster device on the downstream side is connected. The transfer robot 14 of the transfer chamber 13 receives the substrate S from the pass chamber 15 on the upstream side, and receives one of the film forming apparatuses 11 in the cluster apparatus 1 (eg, the film forming apparatus 11a). ) is returned to In addition, the transfer robot 14 receives the substrate S on which the film forming process in the cluster apparatus 1 has been completed from one of the plurality of film forming apparatuses 11 (eg, the film forming apparatus 11b), and is connected to the downstream side. It is transferred to the buffer chamber 16 .

Between the buffer chamber 16 and the pass chamber 15, a turning chamber 17 for changing the direction of the substrate is provided. In the turning chamber 17 , a transfer robot 18 for receiving the substrate S from the buffer chamber 16 , rotating the substrate S by 180 degrees, and transferring the substrate S to the pass chamber 15 is installed. In this way, the orientation of the substrates is the same in the upstream cluster device and the downstream cluster device, thereby facilitating substrate processing.

The pass chamber 15, the buffer chamber 16, and the vortex chamber 17 are so-called relay devices that connect between the cluster devices. , including at least one of the turning rooms.

The film forming apparatus 11 , the mask stock apparatus 12 , the transfer chamber 13 , the buffer chamber 16 , the swirl chamber 17 and the like are maintained in a high vacuum state during the manufacturing process of the organic EL display panel. The pass chamber 15 is normally maintained in a low vacuum state, but may be maintained in a high vacuum state if necessary.

In the present embodiment, the configuration of the electronic device manufacturing apparatus has been described with reference to FIG. 1 , but the present invention is not limited thereto, and other types of apparatuses or chambers may be provided, and arrangements between these apparatuses or chambers may vary. have.

Hereinafter, the specific structure of the film-forming apparatus 11 is demonstrated.

<Film forming device>

2 is a schematic diagram showing the configuration of the film forming apparatus 11 . In the following description, an XYZ rectangular coordinate system with the vertical direction as the Z direction is used. When the substrate S is fixed parallel to the horizontal plane (XY plane) during film formation, the short side direction (direction parallel to the short side) of the substrate S is the X direction, and the long side direction (the direction parallel to the long side) of the substrate S is the Y direction. do it with Also, the rotation angle around the Z axis is denoted by θ.

The film forming apparatus 11 includes a vacuum container 21 maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen gas, a substrate support unit 22 installed in the vacuum container 21 , and a mask support unit 23 , , an electrostatic chuck 24 , and an evaporation source 25 .

The substrate holding unit 22 receives and holds the substrate S conveyed by the transfer robot 14 installed in the transfer chamber 13 , and is also called a substrate holder.

A mask support unit 23 is installed under the substrate support unit 22 . The mask holding unit 23 is a means for receiving and holding the mask M transported by the transport robot 14 installed in the transport chamber 13 , and is also called a mask holder.

The mask M has an opening pattern corresponding to the thin film pattern to be formed on the substrate S, and is placed on the mask support unit 23 . In particular, a mask used for manufacturing an organic EL device for a smartphone is a metal mask having a fine opening pattern formed therein, and is also called a Fine Metal Mask (FMM).

An electrostatic chuck 24 for adsorbing and fixing the substrate by electrostatic attraction is installed above the substrate support unit 22 . The electrostatic chuck 24 has a structure in which an electric circuit such as a metal electrode is embedded in a dielectric (eg, ceramic material) matrix. When positive (+) and negative (-) potentials are applied to the metal electrode, polarized charges of opposite polarity to the metal electrode are induced in the adsorbed material such as the substrate S through the dielectric matrix, and the electrostatic attraction between them induces the substrate (S) is adsorbed and fixed to the electrostatic chuck 24 . The electrostatic chuck 24 may be formed as a single plate or may have a plurality of sub-plates. In addition, even when it is formed of one plate, it is also possible to include a plurality of electric circuits therein, so that the electrostatic force can be controlled to be different depending on the position in one plate.

In the present invention, as will be described later, not only the substrate S (first adsorbed body) but also the mask (M, second adsorbed body) is adsorbed and held by the electrostatic chuck 24 before film formation. Thereafter, a film is formed while the substrate S (first adsorbed body) and the mask M (second adsorbed body) are held by the electrostatic chuck 24 .

In this embodiment, the substrate S (first adsorbed body) disposed on the lower side of the electrostatic chuck 24 in the vertical direction is adsorbed and held by the electrostatic chuck 24, and then the substrate S (first adsorbed body) is thereafter. The mask M (second adsorbed body) disposed on the opposite side of the electrostatic chuck 24 with the complex) as the center is adsorbed and held by the electrostatic chuck 24 over the substrate S (first adsorbed body).

Although not shown in FIG. 2, by providing a cooling mechanism (eg, a cooling plate) for suppressing the temperature rise of the substrate S on the opposite side to the adsorption surface of the electrostatic chuck 24, the deterioration or deterioration of the organic material is suppressed. It is good also as a composition.

Although not shown in FIG. 2 , the electrostatic chuck 24 may also serve as a magnet plate. A magnet plate is a member which raises the adhesiveness of the board|substrate S and the mask M at the time of film-forming by pulling the mask M by magnetic force.

The deposition source 25 includes a crucible (not shown) in which the deposition material to be formed on the substrate is accommodated, a heater (not shown) for heating the crucible, and the deposition material scatters to the substrate until the evaporation rate from the deposition source becomes constant. and a shutter (not shown) that blocks the screen. The deposition source 25 may have various configurations according to uses, such as a point deposition source or a linear deposition source.

Although not shown in FIG. 2, the film forming apparatus 11 includes a film thickness monitor (not shown) and a film thickness calculation unit (not shown) for measuring a film thickness deposited on a substrate.

A substrate Z actuator 26 , a mask Z actuator 27 , an electrostatic chuck Z actuator 28 , a positioning mechanism 29 , and the like are provided on the upper outer side (atmospheric side) of the vacuum vessel 21 . These actuators and positioning devices are constituted by, for example, a motor and a ball screw, or a motor and a linear guide. The substrate Z actuator 26 is a driving means for elevating (moving in the Z direction) the substrate supporting unit 22 . The mask Z actuator 27 is a driving means for raising/lowering the mask support unit 23 (moving in the Z direction). The electrostatic chuck Z actuator 28 is a driving means for lifting (moving in the Z direction) the electrostatic chuck 24 .

The positioning mechanism 29 is a driving means for alignment of the electrostatic chuck 24 . The positioning mechanism 29 rotates the entire electrostatic chuck 24 with respect to the substrate support unit 22 and the mask support unit 23 in the X-direction, the Y-direction, and θ. In the present embodiment, alignment may be performed to adjust the positions of both the substrate S and the mask M by positioning the electrostatic chuck 24 in the XYθ direction.

On the outer upper surface of the vacuum container 21, in addition to the driving mechanism described above, an alignment camera for photographing the alignment marks formed on the substrate S and the mask M through a transparent window installed on the upper surface of the vacuum container 21 ( 20) may be installed. In the present embodiment, the alignment camera 20 is provided at a position corresponding to the diagonal of the rectangular substrate S, the mask M, and the electrostatic chuck 24 or at a position corresponding to four corners of the rectangle. You can do it.

The camera 20 for alignment provided in the film forming apparatus 11 of this embodiment is a camera for fine alignment used for adjusting the relative position of the board|substrate S and the mask M with high precision, The viewing angle is narrow, It is a high-resolution camera. In addition to the camera 20 for fine alignment, the film-forming apparatus 11 may include the camera for rough alignment with a relatively wide viewing angle and low resolution.

The position adjustment mechanism 29 is based on the positional information of the board|substrate S, 1st to-be-adsorbed body, and the mask M, 2nd to-be-adsorbed body acquired with the camera 20 for alignment, the board|substrate S, 1st to-be-adsorbed body. ) and the mask (M, 2nd to-be-adsorbed body) are moved relatively, and alignment which adjusts a position is performed.

The film forming apparatus 11 includes a control unit (not shown). A control part has functions, such as conveyance and alignment of the board|substrate S, control of an evaporation source, and control of film-forming. The control unit is configurable by, for example, a computer having a processor, memory, storage, I/O, and the like. In this case, the function of the control unit is realized by the processor executing the program stored in the memory or storage. As the computer, a general-purpose personal computer may be used, and an embedded computer or a programmable logic controller (PLC) may be used. Alternatively, some or all of the functions of the control unit may be configured by circuits such as ASICs or FPGAs. Moreover, a control part may be provided for each film-forming apparatus, and it may be comprised by one control part controlling a plurality of film-forming apparatuses.

<Electrostatic chuck system>

An electrostatic chuck system 30 according to the present embodiment will be described with reference to FIGS. 3A to 3C . 3A is a conceptual block diagram of the electrostatic chuck system 30 of the present embodiment, FIG. 3B is a schematic cross-sectional view of the electrostatic chuck 24 , and FIG. 3C is a schematic plan view of the electrostatic chuck 24 .

As shown in FIG. 3A , the electrostatic chuck system 30 of the present embodiment includes an electrostatic chuck 24 , a potential difference applying unit 31 , and a potential difference controlling unit 32 .

The potential difference applying unit 31 applies a potential difference for generating an electrostatic attraction to the electrode portion of the electrostatic chuck 24 .

The potential difference control unit 32 includes the magnitude of the potential difference applied to the electrode portion by the potential difference applying unit 31 as the film forming process of the film forming apparatus 11 progresses, the starting time of application of the potential difference, the holding time of the potential difference, and the application of the potential difference. order, etc. For example, the potential difference controller 32 may independently control the application of a potential difference to the plurality of sub-electrode units 241 to 249 included in the electrode unit of the electrostatic chuck 24 for each sub-electrode unit. In the present embodiment, the potential difference control unit 32 is implemented separately from the control unit of the film forming apparatus 11 , but the present invention is not limited thereto, and may be integrated into the control unit of the film forming apparatus 11 .

The electrostatic chuck 24 may include an electrode unit generating an electrostatic attraction force between the electrostatic chuck 24 and the substrate S, and the electrode unit may include a plurality of sub-electrode units 241 to 249 . For example, as shown in FIG. 3A , the electrostatic chuck 24 according to the present embodiment has a direction parallel to a long side of the electrostatic chuck 24 (Y direction) and/or a direction parallel to a short side of the electrostatic chuck 24 . It includes a plurality of sub-electrode units 241 to 249 divided along (X direction).

Each sub-electrode unit includes an electrode pair 33 to which positive (first polarity) and negative (second polarity) potentials are applied to generate electrostatic attraction force. For example, each electrode pair 33 includes a first electrode 331 to which a positive potential is applied and a second electrode 332 to which a negative potential is applied.

The first electrode 331 and the second electrode 332 have a comb shape, respectively, as shown in FIG. 3C . For example, the first electrode 331 and the second electrode 332 each have a plurality of comb portions and a base to which the plurality of comb portions are connected. The base of each electrode 331 and 332 supplies a potential to a plurality of comb portions, and the plurality of comb portions generates an electrostatic attraction force between the electrode 331 and the substrate S. In one sub-electrode part, each of the comb portions of the first electrode 331 is alternately disposed to face each of the comb portions of the second electrode 332 .

In response to the potential applied to the first electrode 331 and the second electrode 332 , the substrate S as an adsorbent is charged by electrostatic induction or electrostatic polarization and is adsorbed to the electrostatic chuck 24 , the first electrode ( By making the comb portion of 331 and the comb portion of the second electrode 332 narrow and the gap between them narrow, a sufficiently strong adsorption force can be generated even for the substrate which is an insulator.

That is, a large non-uniform electric field is formed by the comb portion of the first electrode 331 and the comb portion of the second electrode 332 , and thus the insulating substrate can be strongly adsorbed by the gradient force. As the distance between the combs becomes narrower, the gradient of the electric field strength increases, so the adsorption force also increases. Since the gradient of the electric field strength between the comb portions is large, it is preferable to use a high-resistance material for the dielectric matrix in which the electrode portion of the electrostatic chuck 24 is embedded so that dielectric breakdown does not occur.

In the present embodiment, the electrodes 331 and 332 of the sub-electrode units 241 to 249 of the electrostatic chuck 24 have been described as having a comb shape, but the present invention is not limited thereto. As long as it can generate an electrostatic force between them, it can have various shapes.

The electrostatic chuck 24 of the present embodiment has a plurality of adsorption portions corresponding to the plurality of sub-electrode portions. For example, the electrostatic chuck 24 of the present embodiment may have nine adsorption parts corresponding to the nine sub-electrode parts 241 to 249 as shown in FIG. 3C , but is not limited thereto, and the substrate S ), in order to more precisely control the adsorption of the adsorption unit may have a different number of adsorption units.

The adsorption unit may be installed to be divided in the long side direction (Y-axis direction) and the short side direction (X-axis direction) of the electrostatic chuck 24 , but is not limited thereto, and is divided only in the long side direction or the short side direction of the electrostatic chuck 24 . it might be The plurality of adsorption units may be implemented by a physically single plate having a plurality of electrode parts, or by having each of a plurality of physically divided plates having one or more electrode parts. For example, in the embodiment shown in FIG. 3C , each of the plurality of adsorption units may be implemented to correspond to each of the plurality of sub-electrode units, but one adsorption unit may be implemented to include a plurality of sub-electrode units.

That is, by controlling the application of the potential difference to the sub-electrode units 241 to 249 by the potential difference control unit 32 , as will be described later, the direction (Y direction) intersecting the adsorption direction of the substrate S (X direction) The three sub-electrode units 241 , 244 , and 247 arranged as . That is, each of the three sub-electrode units 241 , 244 , and 247 can independently control the potential difference, but by controlling the potential difference to be simultaneously applied to the three sub-electrode units 241 , 244 and 247 , these three sub-electrodes The electrode portions 241 , 244 , and 247 can function as one adsorption portion. As long as the substrate can be adsorbed independently to each of the plurality of adsorption units, its specific physical structure and electrical circuit structure may be different.

<Adsorption method and potential difference control by electrostatic chuck system>

Hereinafter, the process of adsorbing the substrate S and the mask M to the electrostatic chuck 24 and controlling the potential difference will be described with reference to FIGS. 4A to 4D and 5 .

FIG. 4A shows a process of adsorbing the substrate S to the electrostatic chuck 24 .

In the present embodiment, as shown in FIG. 4A , the substrate S is not simultaneously adsorbed to the entire lower surface of the electrostatic chuck 24 , but is formed from one end to the other end along the first side (short side) of the electrostatic chuck 24 . adsorption proceeds sequentially toward the However, the present invention is not limited thereto, and for example, the substrate may be adsorbed from any one diagonal edge of the electrostatic chuck 24 toward another opposite edge thereof.

In order to sequentially adsorb the substrate S along the first side of the electrostatic chuck 24 , the order of applying the first potential difference for adsorption of the substrate to the plurality of sub-electrode units 241 to 249 may be controlled. , a first potential difference is simultaneously applied to the plurality of sub-electrodes, but the structure or support force of the support part of the substrate support unit 22 supporting the substrate S may be different.

4A illustrates an embodiment in which the substrate S is sequentially adsorbed to the electrostatic chuck 24 by controlling the potential difference applied to the plurality of sub-electrode units 241 to 249 of the electrostatic chuck 24 . Here, the three sub-electrode units 241 , 244 , and 247 disposed along the long side direction (Y direction) of the electrostatic chuck 24 form the first adsorption unit 41 , and a central portion of the electrostatic chuck 24 is formed. The description is based on the assumption that the three sub-electrode units 242 , 245 , 248 form the second adsorption unit 42 , and the remaining three sub-electrode units 243 , 246 , 249 form the third adsorption unit 43 . do.

First, as shown in FIG. 4A , the substrate S is loaded into the vacuum container 21 of the film forming apparatus 11 and placed on the support portion of the substrate support unit 22 .

Then, the electrostatic chuck 24 descends and moves toward the substrate S mounted on the support of the substrate support unit 22 .

When the electrostatic chuck 24 is sufficiently close to or in contact with the substrate S, the potential difference control unit 32 absorbs the third suction portion from the first suction unit 41 along the first side (short side) of the electrostatic chuck 24 . It is controlled so that the first potential difference ΔV1 is sequentially applied toward the part 43 .

That is, as shown in FIG. 4A , the first potential difference is first applied to the first adsorption unit 41 , and then the first potential difference is applied to the second adsorption unit 42 , and finally the third adsorption unit ( 43) is controlled so that the first potential difference is applied.

The first potential difference [Delta]V1 is set to a potential difference of sufficient magnitude to surely adsorb the substrate S to the electrostatic chuck 24 .

As a result, the substrate S is adsorbed to the electrostatic chuck 24 from the side corresponding to the first adsorption part 41 of the substrate S, through the central part of the substrate S, and toward the third adsorption part 43 side. (ie, the substrate S is adsorbed in the X direction), and the substrate S may be adsorbed to the electrostatic chuck 24 in a flat manner without leaving a wrinkle in the center of the substrate.

In the present embodiment, it has been described that the first potential difference ΔV1 is applied while the electrostatic chuck 24 is sufficiently close to or in contact with the substrate S. However, the electrostatic chuck 24 starts to descend toward the substrate S. The first potential difference ?V1 may be applied before or during the fall.

At a predetermined point in time after the adsorption process of the substrate S to the electrostatic chuck 24 is completed, the potential difference controller 32 controls the potential difference applied to the electrode portion of the electrostatic chuck 24 as shown in FIG. 4B . It lowers from one potential difference ΔV1 to a second potential difference ΔV2 that is smaller than the first potential difference ΔV1.

The second potential difference ΔV2 is an adsorption holding potential difference for holding the substrate S in a state of being adsorbed to the electrostatic chuck 24 , and the first potential difference applied when the substrate S is adsorbed to the electrostatic chuck 24 . It is a potential difference smaller than ΔV1). When the potential difference applied to the electrostatic chuck 24 is lowered to the second potential difference ΔV2, the amount of polarized charge induced in the substrate S in response thereto is also shown in FIG. 4B , as shown in FIG. 4B. Although it is decreased compared to the case where the substrate S is once adsorbed to the electrostatic chuck 24 by the first potential difference ΔV1, the substrate is adsorbed even if a second potential difference ΔV2 lower than the first potential difference ΔV1 is applied. state can be maintained.

As such, by lowering the potential difference applied to the electrode portion of the electrostatic chuck 24 to the second potential difference ΔV2 , the time required for separating the substrate from the electrostatic chuck 24 may be shortened.

That is, when the substrate S is separated from the electrostatic chuck 24 , even when the potential difference applied to the electrode portion of the electrostatic chuck 24 is zero (0), the electrostatic chuck 24 and the substrate S are It takes a considerable amount of time (sometimes about several minutes) for the charge induced at the interface between the electrostatic chuck 24 and the substrate S to disappear rather than the electrostatic attraction therebetween. In particular, when the substrate S is adsorbed to the electrostatic chuck 24 , the first electrostatic force sufficiently greater than the minimum electrostatic force Fth required to adsorb the substrate to the electrostatic chuck 24 is normally applied to ensure the adsorption of the substrate S. A potential difference (for example, ?V max shown in Fig. 5) is set, and it takes a considerable amount of time for the substrate to be separated from the first potential difference.

In the present embodiment, in order to prevent the overall process time Tact from increasing due to the time required for the separation of the substrate S from the electrostatic chuck 24 , after the substrate S is adsorbed to the electrostatic chuck 24 , Thus, the potential difference applied to the electrode portion of the electrostatic chuck 24 at a predetermined time point is lowered to the second potential difference.

In the embodiment shown in FIG. 4B , the potential difference applied to the first adsorption unit 41 to the third adsorption unit 43 of the electrostatic chuck 24 is simultaneously lowered to the second potential difference, but the present invention is limited thereto. The time of lowering to the second potential difference or the magnitude of the applied second potential difference may be different for each adsorption unit. For example, you may lower|reduce to a 2nd electric potential difference sequentially toward the 3rd adsorption|suction part 43 from the 1st adsorption|suction part 41.

In this way, after the potential difference applied to the electrode portion of the electrostatic chuck 24 is lowered to the second potential difference, the substrate S adsorbed to the electrostatic chuck 24 and the mask M placed on the mask support unit 23 are separated. Adjust (align) the relative position. In the present embodiment, it has been described that the relative position adjustment (alignment) between the substrate S and the mask M is performed after the potential difference applied to the electrode portion of the electrostatic chuck 24 is lowered to the second potential difference, but the present invention does not provide for this. Without limitation, the alignment process may be performed while the first potential difference is applied to the electrode portion of the electrostatic chuck 24 .

Next, as shown in FIG. 4C , a third potential difference ΔV3 is applied to the electrode portion of the electrostatic chuck 24 so that the mask M is adsorbed with the substrate S interposed therebetween. That is, the mask M is adsorbed to the lower surface of the substrate S adsorbed to the electrostatic chuck 24 .

To this end, first, the electrostatic chuck 24 on which the substrate S is adsorbed is lowered toward the mask M by the electrostatic chuck Z actuator 28 .

When the lower surface of the substrate S adsorbed to the electrostatic chuck 24 is sufficiently close to or in contact with the mask M, the potential difference control unit 32 controls the potential difference application unit 31 to apply the applied portion 31 to the electrode portion of the electrostatic chuck 24 . 3 Control to apply the potential difference ΔV3.

The third potential difference ΔV3 is larger than the second potential difference ΔV2 , and it is preferable that the mask M is charged beyond the substrate S by electrostatic induction. Accordingly, the mask M may be adsorbed to the electrostatic chuck 24 over the substrate S. However, the present invention is not limited thereto, and the third potential difference ΔV3 may have the same magnitude as the second potential difference ΔV2. Even if the third potential difference ΔV3 has the same magnitude as the second potential difference ΔV2 , as described above, the electrostatic chuck 24 or between the substrate S and the mask M due to the lowering of the electrostatic chuck 24 . Since the relative distance is narrowed, even without increasing the magnitude of the potential difference applied to the electrode portion of the electrostatic chuck 24, electrostatic induction may be induced in the mask M by the polarized charges electrostatically induced on the substrate, and the mask M ) can be obtained with an adsorption force sufficient to adsorb the electrostatic chuck 24 over the substrate.

The third potential difference ΔV3 may be made smaller than the first potential difference ΔV1 or may be set to have a magnitude equal to that of the first potential difference ΔV1 in consideration of the shortening of the process time Tact.

In the mask adsorption process shown in FIG. 4C , the potential difference controller 32 sets the third potential difference ΔV3 to the entire electrostatic chuck 24 so that the mask M can be adsorbed to the lower surface of the substrate S without leaving wrinkles. It is not applied simultaneously over the , but sequentially applied from the first adsorption unit 41 to the third adsorption unit 43 along the first side.

That is, as shown in FIG. 4C , a third potential difference is first applied to the first adsorption unit 41 , and then a third potential difference is applied to the second adsorption unit 42 , and the third adsorption unit 43 . Finally, the third potential difference is controlled to be applied.

As a result, the mask M is adsorbed to the electrostatic chuck 24 from the side corresponding to the first adsorption part 41 of the mask M to the third adsorption part 43 side through the central part of the mask M. (that is, the mask M is adsorbed in the X direction), and the mask M can be adsorbed to the electrostatic chuck 24 in a flat manner without wrinkling in the center of the mask M. have.

In the present embodiment, it has been described that the third potential difference ΔV3 is applied while the electrostatic chuck 24 is sufficiently close to or in contact with the mask M, but the electrostatic chuck 24 starts to descend toward the mask M. The third potential difference ?V3 may be applied before or during the descent.

At a predetermined point in time after the process of adsorption of the mask M to the electrostatic chuck 24 is completed, the potential difference controller 32 controls the potential difference applied to the electrode part of the electrostatic chuck 24 as shown in FIG. 4D . The third potential difference ΔV3 is lowered to a fourth potential difference ΔV4 that is smaller than the third potential difference ΔV3.

The fourth potential difference ΔV4 is an adsorption holding potential difference for maintaining an adsorption state of the mask M adsorbed to the electrostatic chuck 24 over the substrate S, and when the mask M is adsorbed to the electrostatic chuck 24 . It is a potential difference lower than the applied third potential difference ΔV3. When the potential difference applied to the electrostatic chuck 24 is lowered to the fourth potential difference ΔV4, the amount of charge induced in the mask M in response thereto is also shown in FIG. 4D, when the third potential difference ΔV2 is applied. However, after the mask M is once adsorbed to the electrostatic chuck 24 by the third potential difference ΔV3, the mask is adsorbed even if a fourth potential difference ΔV4 lower than the third potential difference ΔV3 is applied. can keep

As such, by lowering the potential difference applied to the electrode portion of the electrostatic chuck 24 to the fourth potential difference ΔV4 , the time taken to separate the substrate from the electrostatic chuck 24 may be reduced.

That is, when the mask M is separated from the electrostatic chuck 24 , even if the potential difference applied to the electrode portion of the electrostatic chuck 24 is zero (0), the electrostatic chuck 24 and the mask M It takes a considerable amount of time (sometimes about several minutes) for the charge induced at the interface between the substrate S and the mask M to disappear rather than the electrostatic attraction therebetween. In particular, when the mask M is adsorbed to the electrostatic chuck 24 , a sufficiently large potential difference (third potential difference) is usually applied to ensure the adsorption and shorten the adsorption time. Separation of the mask from the third potential difference It takes a considerable amount of time for it to become possible.

In this embodiment, in order to prevent the overall process time Tact from increasing due to the time required for the separation of the mask M from the electrostatic chuck 24 , after the mask M is adsorbed to the electrostatic chuck 24 , Thus, the potential difference applied to the electrode portion of the electrostatic chuck 24 at a predetermined time point is lowered to a fourth potential difference.

In the embodiment shown in FIG. 4D , the potential difference applied to the first suction unit 41 to the third suction unit 43 of the electrostatic chuck 24 is simultaneously lowered to the fourth potential difference, but the present invention is not limited thereto. Also, the time of lowering to the fourth potential difference or the magnitude of the applied fourth potential difference may be different for each adsorption unit. For example, you may lower|reduce to a 4th potential difference sequentially toward the 3rd adsorption|suction part 43 from the 1st adsorption|suction part 41.

In this way, in a state in which the mask M is adsorbed to the electrostatic chuck 24 over the substrate S, a deposition process in which the deposition material evaporated from the deposition source 25 is formed on the substrate S through the mask M is performed. All. In this embodiment, it has been described that the mask M is held by the electrostatic attraction force by the electrostatic chuck 24, but the present invention is not limited thereto, and the metal mask ( By applying a magnetic force to M), the mask M can be closely_contact|adhered to the board|substrate S more reliably.

Hereinafter, with reference to FIG. 5 , control of the potential difference applied to the electrode part or the sub-electrode part of the electrostatic chuck 24 in the process of adsorbing and holding the substrate S and the mask M by the electrostatic chuck 24 is performed. will be described.

First, in order to adsorb the substrate S to the electrostatic chuck 24 , a first potential difference ΔV1 is applied to the electrode part or the sub-electrode part of the electrostatic chuck 24 at a predetermined time t1 .

The first potential difference ΔV1 has a size sufficient to obtain an electrostatic attraction force sufficient to adsorb the substrate S to the electrostatic chuck 24 , and the first potential difference is applied to the electrode part or the sub-electrode part of the electrostatic chuck 24 . It is preferable that the potential difference be as large as possible in order to shorten the time taken from when the polarization charge is generated on the substrate S. For example, it is preferable to apply the maximum potential difference ΔVmax that can be applied by the potential difference applying unit 31 .

Subsequently, polarized charges are induced in the substrate S by the applied first potential difference and the substrate S is adsorbed to the electrostatic chuck 24 with sufficient electrostatic attraction force (t=t2), and then the electrostatic chuck 24 is The potential difference applied to the electrode part or the sub-electrode part is lowered to the second potential difference ΔV2. The second potential difference ΔV2 may be the lowest potential difference ΔVmin capable of maintaining the state in which the substrate S is adsorbed to the electrostatic chuck 24 .

Then, in order to adsorb the mask M to the electrostatic chuck 24 beyond the substrate S, the potential difference applied to the electrode part or the sub-electrode part of the electrostatic chuck 24 is increased to a third potential difference ΔV3 (t= t3). Since the third potential difference ΔV3 is a potential difference for adsorbing the mask M to the electrostatic chuck 24 beyond the substrate S, it is preferable to have a magnitude greater than or equal to the second potential difference ΔV2, and the potential difference is applied in consideration of the process time More preferably, it is the maximum potential difference ΔVmax that the unit 31 can apply.

In the present embodiment, in order to shorten the time required to separate the substrate S and the mask M from the electrostatic chuck 24 after the film forming process, the potential difference applied to the electrode part or the sub-electrode part of the electrostatic chuck 24 is reduced. Instead of maintaining the third potential difference ΔV3, it is lowered to a fourth potential difference ΔV4 smaller than this (t=t4). However, since the mask M must be able to maintain a state in which only the substrate S is adsorbed to the electrostatic chuck 24 beyond the substrate S, the fourth potential difference (ΔV4) indicates a state in which only the substrate S is adsorbed to the electrostatic chuck 24 . It is preferable that the potential difference is equal to or greater than the second potential difference ((ΔV2) ?

After the film forming process is completed (t5), in order to separate the mask M from the electrostatic chuck 24 , first, the adsorption state of only the substrate S can be maintained by the potential difference applied to the electrode part of the electrostatic chuck 24 . It is lowered to a potential difference (ΔVmin) that exists (fifth potential difference).

Accordingly, after the mask M is separated, the potential difference applied to the electrode part of the electrostatic chuck 24 is lowered to zero (ie, turned off) or a potential difference of the opposite polarity is applied (t=t6). ). Thereby, the polarization charge induced in the substrate S is removed, so that the substrate S may be separated from the electrostatic chuck 24 .

In another embodiment for separating the substrate S and the mask M from the electrostatic chuck 24, after the film forming process is completed, the step of lowering to the fifth potential difference is omitted, and the substrate S and the mask M are separated from each other. At the same time, it is separated from the electrostatic chuck 24 . To this end, the potential difference applying unit 31 is turned off or a potential difference of opposite polarity is applied to the electrode portion or the sub-electrode portion of the electrostatic chuck 24 . Accordingly, the substrate S and the mask M are simultaneously separated from the electrostatic chuck 24, and then, the substrate and the mask are separated using a separate mechanism.

<Film forming process>

Hereinafter, a film forming method employing the potential difference control of the electrostatic chuck according to the present embodiment will be described.

In a state where the mask M is placed on the mask holding unit 23 in the vacuum container 21 , the substrate is moved into the vacuum container 21 of the film forming apparatus 11 by the transfer robot 14 of the transfer chamber 13 . are brought in

The hand of the transport robot 14 that has entered the vacuum container 21 is lowered to place the substrate S on the support portion of the substrate support unit 22 .

Subsequently, after the electrostatic chuck 24 descends toward the substrate S and sufficiently approaches or comes into contact with the substrate S, a first potential difference ΔV1 is applied to the electrostatic chuck 24 to adsorb the substrate S. .

In one embodiment of the present invention, the potential difference applied to the electrostatic chuck 24 after the substrate is adsorbed to the electrostatic chuck 24 is completed in order to maximize the time required to separate the substrate from the electrostatic chuck 24 . It lowers from one potential difference ΔV1 to a second potential difference ΔV2. Even if the potential difference applied to the electrostatic chuck 24 is lowered to the second potential difference ΔV2, it takes time until the polarized charge induced in the substrate by the first potential difference ΔV1 is discharged. 24) can maintain the adsorption force to the substrate.

In a state in which the substrate S is adsorbed to the electrostatic chuck 24 , the substrate S is lowered toward the mask M in order to measure the relative displacement of the substrate S with respect to the mask M. In another embodiment of the present invention, in order to reliably prevent the substrate from falling off from the electrostatic chuck 24 during the lowering process of the substrate adsorbed to the electrostatic chuck 24, after the lowering process of the substrate is completed (that is, to be described later) (just before the alignment process starts), the potential difference applied to the electrostatic chuck 24 is lowered to the second potential difference ΔV2 .

When the board|substrate S descends to a measurement position, the alignment mark formed in the board|substrate S and the mask M is image|photographed with the camera 20 for alignment, and the relative position shift of a board|substrate and a mask is measured. In another embodiment of the present invention, the potential difference applied to the electrostatic chuck 24 is applied to the electrostatic chuck 24 after the measurement process for alignment is completed (during the alignment process) in order to further increase the precision of the measurement process of the relative positions of the substrate and the mask. lower by a potential difference. That is, by photographing the alignment marks between the substrate and the mask in a state in which the substrate is strongly attracted to the electrostatic chuck 24 by the first potential difference ΔV1 (the substrate is held more flat), the precision of the measurement process can be increased. have.

As a result of the measurement, when it is determined that the displacement of the substrate relative to the mask exceeds the threshold, the substrate S adsorbed to the electrostatic chuck 24 is moved in the horizontal direction (XYθ direction) to position the substrate with respect to the mask. Adjust (align). In another embodiment of the present invention, the potential difference applied to the electrostatic chuck 24 is lowered to the second potential difference ΔV2 after the positioning process is completed. Through this, it is possible to further increase the precision throughout the alignment process (relative position measurement and position adjustment).

After the alignment process, the mask M is adsorbed to the electrostatic chuck 24 over the substrate S. To this end, a third potential difference ΔV3 having a magnitude greater than or equal to the second potential difference is applied to the electrode part or the sub-electrode part of the electrostatic chuck 24 .

After the mask M adsorption process is completed, the potential difference applied to the electrode part or the sub-electrode part of the electrostatic chuck 24 is a potential difference capable of maintaining the state in which the substrate and the mask are adsorbed to the electrostatic chuck 24 , It is lowered to the fourth potential difference. Through this, it is possible to shorten the time taken to separate the substrate S and the mask M from the electrostatic chuck 24 after the film formation process is completed.

Then, the shutter of the deposition source 25 is opened and the deposition material is deposited on the substrate S through a mask.

After deposition to a desired thickness, the mask M is separated by lowering the potential difference applied to the electrode part or the sub-electrode part of the electrostatic chuck 24 to a fifth potential difference, and only the substrate is adsorbed to the electrostatic chuck 24 . , the substrate is raised by the electrostatic chuck Z actuator 28 .

Then, the hand of the transport robot 14 enters the vacuum container 21 of the film forming apparatus 11, and a potential difference of zero (0) or reverse polarity is applied to the electrode part or sub-electrode part of the electrostatic chuck 24 ( t6) The electrostatic chuck 24 is separated from the substrate and rises. Thereafter, the deposition-completed substrate is unloaded from the vacuum container 21 by the transport robot 14 .

<Method of manufacturing electronic device>

Next, an example of the manufacturing method of the electronic device using the film-forming apparatus of this embodiment is demonstrated. Hereinafter, the structure and manufacturing method of an organic electroluminescent display are illustrated as an example of an electronic device.

First, an organic EL display device to be manufactured will be described. Fig. 6(a) is an overall view of the organic EL display device 60, and Fig. 6(b) shows a cross-sectional structure of one pixel.

As shown in FIG. 6A , in the display area 61 of the organic EL display device 60, a plurality of pixels 62 including a plurality of light emitting elements are arranged in a matrix form. Although details will be described later, each of the light emitting devices has a structure including an organic layer sandwiched between a pair of electrodes. In addition, a pixel here refers to the minimum unit which enables the display of a desired color in the display area 61. As shown in FIG. In the case of the organic EL display device according to the present embodiment, the pixel 62 is constituted by a combination of the first light emitting element 62R, the second light emitting element 62G, and the third light emitting element 62B that emit light different from each other. has been The pixel 62 is often composed of a combination of a red light emitting device, a green light emitting device, and a blue light emitting device, but may be a combination of a yellow light emitting device, a cyan light emitting device, and a white light emitting device. not.

Fig. 6(b) is a schematic partial cross-sectional view taken along line AB of Fig. 6(a). The pixel 62 has an organic EL element having an anode 64 , a hole transport layer 65 , light emitting layers 66R, 66G, and 66B, an electron transport layer 67 , and a cathode 68 on a substrate 63 . . Among them, the hole transport layer 65, the light emitting layers 66R, 66G, and 66B, and the electron transport layer 67 correspond to the organic layer. In this embodiment, the light emitting layer 66R is an organic EL layer emitting red light, the light emitting layer 66G is an organic EL layer emitting green color, and the light emitting layer 66B is an organic EL layer emitting blue color. The light-emitting layers 66R, 66G, and 66B are formed in patterns corresponding to light-emitting elements (sometimes referred to as organic EL elements) emitting red, green, and blue, respectively. In addition, the anode 64 is formed separately for each light emitting element. The hole transport layer 65, the electron transport layer 67, and the cathode 68 may be formed in common with the plurality of light emitting elements 62R, 62G, and 62B, or may be formed for each light emitting element. In addition, in order to prevent the anode 64 and the cathode 68 from being short-circuited by foreign substances, an insulating layer 69 is provided between the anodes 64 . In addition, since the organic EL layer is deteriorated by moisture or oxygen, a protective layer 70 for protecting the organic EL element from moisture and oxygen is provided.

Although the hole transport layer 65 or the electron transport layer 67 is shown as one layer in FIG. 6(b), depending on the structure of the organic EL display device, it may be formed of a plurality of layers including the hole blocking layer or the electron blocking layer. may be Also, between the anode 64 and the hole transport layer 65, a hole injection layer having an energy band structure capable of smoothly injecting holes from the anode 64 to the hole transport layer 65 may be formed. . Similarly, an electron injection layer may be formed between the cathode 68 and the electron transport layer 67 .

Next, an example of the manufacturing method of an organic electroluminescent display apparatus is demonstrated concretely.

First, a substrate 63 on which a circuit (not shown) for driving an organic EL display device and an anode 64 are formed is prepared.

An insulating layer 69 is formed by forming an acrylic resin by spin coating on the substrate 63 on which the anode 64 is formed, and patterning the acrylic resin to form an opening in the portion where the anode 64 is formed by lithography. This opening corresponds to the light emitting region in which the light emitting element actually emits light.

The substrate 63 patterned with the insulating layer 69 is loaded into the first organic material film forming apparatus, the substrate is held by a substrate holding unit and an electrostatic chuck, and the hole transport layer 65 is placed on the anode 64 of the display area. A film is formed as a common layer. The hole transport layer 65 is formed by vacuum deposition. In reality, since the hole transport layer 65 is formed to have a size larger than that of the display area 61, a high-precision mask is not required.

Next, the substrate 63 formed up to the hole transport layer 65 is loaded into the second organic material film forming apparatus, and is held by the substrate holding unit and the electrostatic chuck. The substrate and the mask are aligned, the substrate is placed on the mask, and the red light emitting layer 66R is formed on the portion of the substrate 63 where the red light emitting element is placed.

Similar to the film formation of the light emitting layer 66R, the light emitting layer 66G emitting green light is formed by the third organic material film forming apparatus, and further, the light emitting layer 66B which emits blue light is formed by the fourth organic material film forming apparatus. After the formation of the light emitting layers 66R, 66G, and 66B is completed, an electron transporting layer 67 is formed over the entire display area 61 by the fifth organic material film forming apparatus. The electron transport layer 67 is formed as a layer common to the light emitting layers 66R, 66G, and 66B of the three colors.

A cathode 68 is formed by moving the substrate formed up to the electron transport layer 67 to a metallic deposition material film forming apparatus.

According to the present invention, after the substrate and/or mask are adsorbed to the electrostatic chuck 24 , the potential difference applied to the electrostatic chuck 24 is lowered in advance at a predetermined point in time, thereby removing the substrate and/or mask from the electrostatic chuck 24 . The time taken for separation can be shortened, and the process time can be shortened.

After that, it is transferred to a plasma CVD apparatus to form a protective layer 70 , thereby completing the organic EL display apparatus 60 .

From the time the substrate 63 on which the insulating layer 69 is patterned is brought into the film forming apparatus until the film formation of the protective layer 70 is completed, when exposed to an atmosphere containing moisture or oxygen, the light emitting layer made of the organic EL material is It may be deteriorated by moisture or oxygen. Therefore, in this example, carrying in and carrying out of the board|substrate between film-forming apparatuses are performed in a vacuum atmosphere or inert gas atmosphere.

The above embodiment shows an example of the present invention, and the present invention is not limited to the configuration of the above embodiment, and may be appropriately modified within the scope of the technical idea.

1: cluster device
11: film forming device
12: mask stock device
13: return room
14: transfer robot
20: camera for alignment
21: vacuum vessel
22: substrate support unit
23: mask support unit
24: electrostatic chuck
25: evaporation source
28: electrostatic chuck Z actuator
29: positioning mechanism
30: electrostatic chuck system
31: potential difference applying unit
32: potential difference control unit
33: electrode pair
41 to 43: the first adsorption unit to the third adsorption unit
241 to 249: sub-electrode unit
331: first electrode
332: second electrode

Claims (26)

An electrostatic chuck system for adsorbing an adsorbent, comprising:
an electrostatic chuck including an electrode part;
a potential difference applying unit for applying a potential difference to the electrode unit of the electrostatic chuck;
and a potential difference control unit for controlling application of a potential difference by the potential difference applying unit;
The potential difference control unit includes: a first potential difference for adsorbing a first adsorbed body to the electrostatic chuck; controlling the electrostatic chuck so that a third potential difference for adsorbing the second adsorbed body is sequentially applied to the electrode with the first adsorbed body interposed therebetween;
The third potential difference is greater than or equal to the second potential difference and smaller than the first potential difference,
The electrostatic chuck system according to claim 1, wherein the electrostatic chuck holding the first adsorbed body and the second adsorbed body are brought close to each other during a period from applying the second potential difference to applying the third potential difference. delete The electrostatic chuck system of claim 1 , wherein the potential difference controller controls to apply a fourth potential difference to the electrode after the third potential difference is applied. 4. The electrostatic chuck system of claim 3, wherein the fourth potential difference is smaller than the third potential difference. 5. The electrostatic chuck system of claim 4, wherein the fourth potential difference is greater than or equal to the second potential difference. The electrostatic chuck system of claim 1 , wherein the electrode part comprises a plurality of sub-electrode parts divided along a first side of the electrostatic chuck. The electrostatic chuck system of claim 6 , wherein the potential difference controller sequentially applies the first potential difference to the plurality of sub-electrodes from one sub-electrode part along the first side toward the other sub-electrode part. . The electrostatic chuck of claim 6 , wherein the potential difference controller controls so that the third potential difference is sequentially applied to the plurality of sub-electrodes from one sub-electrode part along the first side toward the other sub-electrode part along the first side. system. The comb-shaped first electrode of claim 1 , wherein the electrode unit includes a comb-shaped first electrode to which a potential of a first polarity is applied and a comb-shaped second electrode to which a potential opposite to the first polarity is applied, The electrostatic chuck system, characterized in that the comb portion of the first electrode and the comb portion of the second electrode in a comb shape are alternately arranged with each other. A film forming apparatus for forming a film on a substrate through a mask, comprising:
An electrostatic chuck system for adsorbing a substrate as a first adsorbent and a mask as a second adsorbent,
The electrostatic chuck system is a film forming apparatus, characterized in that the electrostatic chuck system according to any one of claims 1 and 3 to 9. A method for adsorbing an adsorbent, comprising:
applying a first potential difference to an electrode portion of the electrostatic chuck to adsorb the first adsorbent to the electrostatic chuck;
applying a second potential difference smaller than the first potential difference to the electrode part for maintaining the first adsorbed body in a state in which it is adsorbed to the electrostatic chuck;
applying a third potential difference equal to or greater than the second potential difference and lower than the first potential difference to the electrode to adsorb a second adsorbed body to the electrostatic chuck with the first adsorbed body interposed therebetween;
and bringing the electrostatic chuck adsorbing the first adsorbed body closer to the second adsorbed body between after application of the second potential difference and until the third potential difference is applied. adsorption method. delete delete The adsorption method according to claim 11, further comprising, after adsorbing the second adsorbent, applying a fourth potential difference smaller than the third potential difference to the electrode part. 15. The adsorption method according to claim 14, wherein the fourth potential difference is greater than or equal to the second potential difference. 12. The method of claim 11
In the step of adsorbing the first adsorbed body, in the plurality of sub-electrode units divided along the first side of the electrostatic chuck, the first sub-electrode unit is sequentially directed from one sub-electrode unit to the other sub-electrode unit along the first side. 1 An adsorption method characterized in that a potential difference is applied. 12. The method of claim 11
In the step of adsorbing the second adsorbent, in the plurality of sub-electrode units divided along the first side of the electrostatic chuck, one end of the sub-electrode unit is sequentially directed toward the other sub-electrode unit along the first side. 3 An adsorption method characterized in that a potential difference is applied. A method of forming a deposition material on a substrate through a mask, comprising:
The deposition material is evaporated to the substrate through the mask while the substrate and the mask are adsorbed to the electrostatic chuck by the adsorption method according to any one of claims 11 to 17. A film-forming method comprising the step of forming a film. delete delete delete delete delete delete delete 19. A method of manufacturing an electronic device, characterized in that the electronic device is manufactured using the film forming method of claim 18.

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