KR102590797B1 - Adsorption system, adsorption method and film forming apparatus using the same, film forming method, and manufacturing method of electronic device - Google Patents

Abstract

The adsorption system of the present invention is an adsorption system for adsorbing a first adsorbent and a second adsorbent, comprising: an electrostatic chuck for adsorbing the first adsorbent and the second adsorbent via the first adsorbent; Optical means for photographing at least the second object to be absorbed while the first object and the second object to be absorbed are adsorbed by an electrostatic chuck, and based on the image acquired by the optical means, the first object to be absorbed. It is characterized by including means for determining whether the complex and the second adsorbed body are in close contact.

Description

Adsorption system, adsorption method, and film forming apparatus, film forming method, and manufacturing method of electronic device using the same {ADSORPTION SYSTEM, ADSORPTION METHOD AND FILM FORMING APPARATUS USING THE SAME, FILM FORMING METHOD, AND MANUFACTURING METHOD OF ELECTRONIC DEVICE}

The present invention relates to an adsorption system, an adsorption method, and a film forming apparatus, a film forming method, and a manufacturing method of an electronic device using the same.

In the production of an organic EL display device (organic EL display), when forming an organic light-emitting element (organic EL element; OLED) that constitutes an organic EL display device, a pixel pattern is formed using the deposition material evaporated from the deposition source of the film forming device. By depositing on the substrate through the formed mask, an organic material layer or a metal layer is formed.

In an upward deposition (depo-up) deposition apparatus, the deposition source is installed at the bottom of the vacuum vessel of the deposition apparatus, the substrate is placed on the upper part of the vacuum vessel, and deposition is performed on the lower surface of the substrate. In the vacuum container of this upward deposition type film formation apparatus, only the peripheral portion of the lower surface of the substrate is held and supported by the substrate holder, so the substrate sags under its own weight, which is a factor that reduces deposition precision. It is becoming. Even in film deposition devices other than the upward deposition method, there is a possibility that sagging of the substrate due to its own weight may occur.

Technology using an electrostatic chuck is being examined as a method to reduce sagging of the substrate due to its own weight. In other words, sagging of the substrate can be reduced by adsorbing the entire upper surface of the substrate with an electrostatic chuck.

Patent Document 1 proposes a technology for adsorbing a substrate and a mask using an electrostatic chuck.

Korean Patent Publication No. 2007-0010723

However, Patent Document 1 does not disclose a configuration capable of monitoring the adhesion state between the mask and the substrate adsorbed on the electrostatic chuck.

Decreased adhesion of the mask to the substrate is one of the main causes of film formation defects. In order to reduce this decrease in adhesion, a new method of adsorbing the substrate and the mask using an electrostatic chuck, as shown in Patent Document 1, has been proposed, and in this method, the method of applying the potential to the electrostatic chuck is improved to keep the mask as close as possible. Various attempts are being researched to adhere the material to the substrate while preventing wrinkles from remaining.

However, despite these various attempts, as the substrate and mask for film formation become larger, adsorption defects occur in which adsorption occurs with wrinkles remaining, or an unexpected decrease in adsorption occurs after normal adsorption occurs, causing the mask to adhere to the substrate. There is still a possibility that problems such as wrinkles forming again in the center of the mask due to separation from the film forming surface may still occur.

The present invention aims to prevent film formation defects due to poor adhesion by checking the adhesion state of the mask to the substrate, that is, whether wrinkles appear on the mask adsorbed to the substrate, before entering the film formation process. The purpose.

An adsorption system according to an embodiment of the present invention is an adsorption system for adsorbing a first adsorbate and a second adsorbate, and adsorbs the second adsorbate via the first adsorbate and the first adsorbate. an electrostatic chuck, an optical means for photographing at least the second object to be absorbed while the first object and the second object to be absorbed are adsorbed by the electrostatic chuck, and based on the image acquired by the optical means, , characterized by comprising means for determining whether the first adsorbed body and the second adsorbed body are in close contact.

An adsorption system according to another embodiment of the present invention is an adsorption system for adsorbing a first adsorbent and a second adsorbent, comprising: adsorption means for adsorbing the second adsorbent via the first adsorbent; In a state in which the second object to be absorbed is adsorbed via the first object to be absorbed by the adsorption means, at least an optical means for photographing the second object to be absorbed, and based on the image acquired by the optical means, It is characterized by including means for determining whether the first adsorbed body and the second adsorbed body are in close contact.

A film forming apparatus according to an embodiment of the present invention is a film forming apparatus for forming a film on a substrate via a mask, and includes an adsorption system that adsorbs the mask as a second adsorbent via the substrate as a first adsorbent; , the adsorption system is characterized in that it is an adsorption system according to the embodiment of the present invention.

An adsorption method according to an embodiment of the present invention is a method for adsorbing a first adsorbent and a second adsorbent, comprising the steps of adsorbing the first adsorbent by an electrostatic chuck, and the first adsorbent by the electrostatic chuck. A step of adsorbing a second object to be absorbed through an object to be absorbed, a step of photographing at least the second object to be absorbed by an optical means, and based on the image acquired by the optical means, the first object to be absorbed and the second object to be absorbed. 2. It is characterized by including the step of determining whether or not the adsorbed body is in close contact.

An adsorption method according to another embodiment of the present invention is a method for adsorbing a first adsorbate and a second adsorbate, comprising the steps of adsorbing the second adsorbate via the first adsorbate, and using optical means. At least the step of photographing the second object to be absorbed, and the step of determining whether the first object to be absorbed and the second object to be absorbed are in close contact based on the image acquired by the optical means. Do it as

A film forming method according to an embodiment of the present invention is a film forming method for forming a deposition material on a substrate through a mask, using the adsorption method according to an embodiment of the present invention to remove the substrate as a first absorbent body. It is characterized by including a step of adsorbing the mask as a second adsorbent, and in a state of adsorbing the mask, releasing the deposition material to form a film of the deposition material on the substrate through the mask.

A method of manufacturing an electronic device according to an embodiment of the present invention is characterized by manufacturing an electronic device using the film forming method according to an embodiment of the present invention.

According to the present invention, before entering the film formation process, film formation defects due to poor adhesion can be prevented in advance by checking the adhesion state of the mask to the substrate, that is, whether wrinkles are formed on the mask adsorbed to the substrate. there is.

1 is a schematic diagram of a portion of an electronic device manufacturing apparatus.
Figure 2 is a schematic diagram of a film forming apparatus according to an embodiment of the present invention.
3A to 3C are conceptual and schematic diagrams of an electrostatic chuck system according to an embodiment of the present invention.
Figure 4 is a process diagram showing the suction sequence of a substrate to an electrostatic chuck.
Figure 5 is a process diagram showing the adsorption sequence of the mask to the electrostatic chuck.
Figure 6 is a process diagram showing the separation sequence of the mask and substrate from the electrostatic chuck.
Figure 7 is a graph showing the change in voltage applied to the electrostatic chuck.
Figure 8 is a top view showing the positional relationship of alignment marks when the substrate and mask are aligned.
FIG. 9 is a diagram showing a state in which wrinkles remain in the center of the mask (FIG. 9(a)) and an example of a misalignment pattern of alignment marks when wrinkles occur (FIG. 9(b)).
Figure 10 is a diagram showing an example of an alignment mark misalignment pattern when the entire mask is misaligned in one direction.
11 is a schematic diagram showing an electronic device.

Hereinafter, preferred embodiments and examples of the present invention will be described with reference to the drawings. However, the following embodiments and examples merely exemplify preferred configurations of the present invention, and the scope of the present invention is not limited to these configurations. In addition, in the following description, the hardware configuration and software configuration of the device, processing flow, manufacturing conditions, size, material, shape, etc. are not intended to limit the scope of the present invention to these unless specifically stated. no.

The present invention can be applied to an apparatus for forming a film by depositing various materials on the surface of a substrate, and can be suitably applied to an apparatus for forming a thin film (material layer) of a desired pattern by vacuum deposition. As the material of the substrate, any material such as glass, polymer film, or metal can be selected. For example, the substrate may be a substrate in which a film such as polyimide is laminated on a glass substrate. Additionally, as the deposition material, any material such as an organic material or a metallic material (metal, metal oxide, etc.) can be selected. In addition to the vacuum deposition apparatus described in the description below, the present invention can also be applied to a film formation apparatus including a sputter apparatus or a CVD (Chemical Vapor Deposition) apparatus. Specifically, the technology of the present invention is applicable to manufacturing equipment for organic electronic devices (for example, organic light-emitting elements, thin film solar cells) and optical members. Among them, an organic light-emitting device manufacturing apparatus that forms an organic light-emitting device by evaporating an evaporation material and depositing it on a substrate through a mask is one of the preferred application examples of the present invention.

<Electronic device manufacturing equipment>

1 is a plan view schematically showing the configuration of a part of an electronic device manufacturing apparatus.

The manufacturing apparatus in FIG. 1 is used, for example, to manufacture display panels of organic EL displays for smartphones. In the case of display panels for smartphones, for example, 4.5 generation substrates (approximately 700 mm After forming a film to form an organic EL element on a substrate of approximately 925 mm), the substrate is cut out and manufactured into a plurality of small-sized panels.

An electronic device manufacturing apparatus generally includes a plurality of cluster devices (1) and a relay device that connects the cluster devices (1).

The cluster device 1 includes a plurality of film forming devices 11 that perform processing (e.g., film forming) on the substrate S, and a plurality of mask stock devices 12 that store masks M before and after use, It is provided with a transfer chamber 13 disposed in the center. As shown in FIG. 1, the transfer chamber 13 is connected to each of a plurality of film forming devices 11 and mask stock devices 12.

Within the transfer room 13, a transfer robot 14 is disposed to transfer the substrate and mask. The transport robot 14 transports the substrate S from the pass chamber 15 of the relay device arranged on the upstream side to the film forming device 11. Additionally, the transfer robot 14 transfers the mask M between the film forming device 11 and the mask stock device 12. The transfer robot 14 may be, for example, a robot having a structure in which a robot hand for holding the substrate S or the mask M is mounted on a multi-joint arm.

In the film forming apparatus 11 (also called a deposition apparatus), the deposition material stored in the deposition source is heated by a heater to evaporate, and is deposited on the substrate through a mask. Transfer of the substrate S to and from the transfer robot 14, adjustment (alignment) of the relative positions of the substrate S and the mask M, fixation of the substrate S on the mask M, film formation (deposition) ), etc., are performed by the film forming apparatus 11.

In the mask stock device 12, new masks and used masks to be used in the film forming process in the film forming apparatus 11 are divided into two cassettes and stored. The transfer robot 14 transfers the used mask from the film forming device 11 to the cassette of the mask stock device 12, and transfers a new mask stored in another cassette of the mask stock device 12 to the film forming device 11. Send it back to

The cluster device 1 includes a pass chamber 15 that transfers the substrate S from the upstream side in the flow direction of the substrate S to the cluster device 1, and a pass chamber 15 for transferring the substrate S to the cluster device 1, and A buffer chamber 16 is connected to transfer the substrate S to another cluster device downstream. The transfer robot 14 in the transfer chamber 13 receives the substrate S from the pass chamber 15 on the upstream side and uses one of the film forming devices 11 in the cluster device 1 (for example, the film forming device 11a). ) is returned. In addition, the transfer robot 14 receives the substrate S on which the film forming process in the cluster device 1 has been completed from one of the plurality of film forming devices 11 (e.g., the film forming device 11b) and is connected to the downstream side. It is returned to the buffer room (16).

A turning chamber 17 is installed between the buffer chamber 16 and the pass chamber 15 to change the direction of the substrate. A transfer robot 18 is installed in the turning chamber 17 to receive the substrate S from the buffer chamber 16, rotate the substrate S 180 degrees, and transfer the substrate S to the pass chamber 15. Through this, the direction of the substrate S becomes the same in the upstream cluster device and the downstream cluster device, making substrate processing easier.

The pass chamber 15, buffer chamber 16, and swiveling chamber 17 are so-called relay devices that connect cluster devices, and the relay devices installed on the upstream and/or downstream sides of the cluster devices are the pass chamber and buffer chamber. , including at least one of the swiveling rooms.

The film forming device 11, the mask stock device 12, the transfer chamber 13, the buffer chamber 16, the vortex chamber 17, etc. are maintained in a high vacuum state during the manufacturing process of the organic light emitting device. The pass chamber 15 is usually maintained in a low vacuum state, but may be maintained in a high vacuum state as needed.

In this embodiment, the configuration of the electronic device manufacturing apparatus is described with reference to FIG. 1, but the present invention is not limited thereto, and may have other types of devices or chambers, and the arrangement between these devices or chambers may be different. there is.

Hereinafter, the specific configuration of the film forming apparatus 11 will be described.

<Tabernacle equipment>

FIG. 2 is a schematic diagram showing the configuration of the film forming apparatus 11. In the following description, the XYZ orthogonal coordinate system with the vertical direction as the Z direction is used. When the substrate S is fixed parallel to the horizontal plane (XY plane) during film formation, the short side direction (direction parallel to the short side) of the substrate S is the X direction, and the long side direction (the direction parallel to the long side) is the Y direction. Do it as Also, the rotation angle around the Z axis is expressed as θ.

The film forming apparatus 11 includes a vacuum container 21 maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen gas, a substrate support unit 22 installed in the vacuum container 21, a mask support unit 23, and , an electrostatic chuck 24, and a deposition source 25.

The substrate support unit 22 is a means for receiving and holding the substrate S transferred by the transfer robot 14 installed in the transfer chamber 13, and is also called a substrate holder.

A mask support unit 23 is installed below the substrate support unit 22. The mask support unit 23 is a means for receiving and holding the mask M transferred by the transfer robot 14 installed in the transfer room 13, and is also called a mask holder.

The mask M has an opening pattern corresponding to the thin film pattern to be formed on the substrate S, and is placed on the mask support unit 23. In particular, the mask used to manufacture organic EL devices for smartphones is a metal mask with a fine opening pattern, and is also called a FMM (Fine Metal Mask).

An electrostatic chuck 24 is installed above the substrate support unit 22 to attract and secure the substrate by electrostatic attraction. The electrostatic chuck 24 has a structure in which electric circuits such as metal electrodes are embedded in a dielectric (eg, ceramic material) matrix. The electrostatic chuck 24 may be a Coulomb force type electrostatic chuck, a Johnson-Rabeck force type electrostatic chuck, or a gradient force type electrostatic chuck. The electrostatic chuck 24 is preferably a gradient force type electrostatic chuck. By using the electrostatic chuck 24 as a gradient force type electrostatic chuck, even when the substrate S is an insulating substrate, it can be satisfactorily adsorbed by the electrostatic chuck 24 . When the electrostatic chuck 24 is a Coulomb force type electrostatic chuck, when positive (+) and negative (-) potentials are applied to the metal electrode, the metal electrode and the adsorption object such as the substrate S are connected through the dielectric matrix. Polarization charges of opposite polarity are induced, and the substrate S is adsorbed and fixed to the electrostatic chuck 24 by electrostatic attraction between them.

The electrostatic chuck 24 may be formed as one plate or may be formed to have a plurality of sub-plates. In addition, even when it is formed as a single plate, a plurality of electric circuits can be included therein, so that the electrostatic force can be controlled to vary depending on the position within the single plate.

In this embodiment, as will be described later, before film formation, not only the substrate (S, the first object to be absorbed) but also the mask (M, the second object to be absorbed) is adsorbed and held by the electrostatic chuck 24. Afterwards, film formation is performed while holding the substrate (S, first adsorption object) and the mask (M, second adsorption object) with the electrostatic chuck 24, and after completion of film formation, the substrate (S, first adsorption object) is The holding of the adsorbed body) and the mask (M, the second adsorbed body) by the electrostatic chuck 24 is released.

That is, the substrate (S, the first object to be absorbed) placed on the lower side in the vertical direction of the electrostatic chuck 24 is adsorbed and held by the electrostatic chuck 24, and then the substrate (S, the first object to be absorbed) is placed between the substrates (S, the first object to be absorbed). The mask (M, second object to be absorbed) placed on the opposite side of the electrostatic chuck 24 is adsorbed and held by the electrostatic chuck 24 over the substrate (S, first object to be absorbed). And after film formation is performed while the substrate (S, first absorbent object) and the mask (M, second absorbent object) are held by the electrostatic chuck 24, the substrate (S, first absorbent object) and the mask ( M, second adsorbed body) is peeled from the electrostatic chuck 24. At this time, the mask (M, the second absorbent object) that is adsorbed via the substrate (S, the first absorbent object) is first peeled off, and then the substrate (S, the first absorbent object) is peeled. Details of the adsorption and separation of the substrate S and the mask M to and from the electrostatic chuck 24 will be described later with reference to FIGS. 4 to 7.

Although not shown in FIG. 2, by installing a cooling mechanism (e.g., a cooling plate) to suppress the temperature rise of the substrate S on the side opposite to the adsorption surface of the electrostatic chuck 24, the organic matter deposited on the substrate S is removed. It may be configured to suppress deterioration or deterioration of the material.

The deposition source 25 includes a crucible (not shown) that stores the deposition material to be formed on the substrate, a heater (not shown) to heat the crucible, and a device that causes the deposition material to scatter onto the substrate until the evaporation rate from the deposition source becomes constant. Includes a shutter (not shown) that prevents The deposition source 25 may have various configurations depending on the purpose, such as a point deposition source or a linear deposition source.

Although not shown in FIG. 2, the film forming apparatus 11 includes a film thickness monitor (not shown) and a film thickness calculation unit (not shown) for measuring the film thickness deposited on the substrate.

A substrate Z actuator 26, a mask Z actuator 27, an electrostatic chuck Z actuator 28, a position adjustment mechanism 29, etc. are installed on the upper outer side (atmospheric side) of the vacuum container 21. These actuators and position adjusting devices are composed of, for example, a motor and a ball screw, or a motor and a linear guide. The substrate Z actuator 26 is a driving means for raising and lowering (moving in the Z direction) the substrate support unit 22. The mask Z actuator 27 is a driving means for raising and lowering (moving in the Z direction) the mask support unit 23. The electrostatic chuck Z actuator 28 is a driving means for raising and lowering (moving in the Z direction) the electrostatic chuck 24.

The position adjustment mechanism 29 is a driving means for alignment of the electrostatic chuck 24. The position adjustment mechanism 29 moves the entire electrostatic chuck 24 in the X direction, moves in the Y direction, and rotates θ with respect to the substrate support unit 22 and the mask support unit 23. In this embodiment, alignment of the relative positions of the substrate S and the mask M is performed by adjusting the position of the electrostatic chuck 24 in the XYθ direction while the substrate S is adsorbed.

On the outer upper surface of the vacuum container 21, in addition to the above-described driving mechanism, an alignment camera for photographing the alignment marks formed on the substrate S and the mask M through a transparent window installed on the upper surface of the vacuum container 21 ( 20) is installed. Alignment marks may be formed on two diagonal corners or on all four corners of the typically rectangular substrate S and mask M. An observation hole (alignment mark observation hole) H is formed in the electrostatic chuck 24 corresponding to the formation position of the alignment mark on these substrates S and mask M (see FIG. 3C), and the corresponding observation hole is formed. By photographing an alignment mark with the alignment camera 20 through the hole H, alignment between the substrate S and the mask M is performed.

The alignment camera 20 is a fine alignment camera used to adjust the relative positions of the substrate S and the mask M with high precision, and has a narrow viewing angle but high resolution. In addition to the fine alignment camera 20, the film forming device 11 may further include a rough alignment camera with a relatively wide viewing angle and low resolution.

The position adjustment mechanism 29 operates on the substrate (S, the first object to be absorbed) based on the positional information of the substrate (S, the first object to be absorbed) and the mask (M, the second object to be absorbed) obtained by the alignment camera 20. ) and the mask (M, the second adsorbed body) are relatively moved to perform alignment to adjust the position.

In one embodiment of the present invention, the alignment marks formed on the substrate S and the mask M are used to check the adhesion state of the mask to the substrate, that is, to check whether wrinkles are formed in the mask adsorbed to the substrate. It is also used for This will be described later.

The film forming device 11 includes a control unit (not shown). The control unit has functions such as transport and alignment of the substrate S, control of the deposition source 25, and control of film formation. The control unit can be configured by a computer having, for example, a processor, memory, storage, I/O, etc. In this case, the function of the control unit is realized by the processor executing a program stored in memory or storage. As a computer, a general-purpose personal computer may be used, an embedded computer, or a PLC (programmable logic controller) may be used. Alternatively, some or all of the functions of the control unit may be configured with a circuit such as ASIC or FPGA. Additionally, a control unit may be installed for each film forming device, or one control unit may be configured to control a plurality of film forming devices.

<Electrostatic chuck system>

The electrostatic chuck system 30 according to this embodiment will be described with reference to FIGS. 3A to 3C.

FIG. 3A is a conceptual block diagram of the electrostatic chuck system 30 of this embodiment, FIG. 3B is a schematic cross-sectional view of the electrostatic chuck 24, and FIG. 3C is a schematic plan view of the electrostatic chuck 24.

The electrostatic chuck system 30 of this embodiment includes an electrostatic chuck 24, a voltage application unit 31, and a voltage control unit 32, as shown in FIG. 3A.

The voltage application unit 31 applies a voltage to generate electrostatic attraction to the electrode portion of the electrostatic chuck 24.

The voltage control unit 32 controls the magnitude of the voltage applied to the electrode section by the voltage application unit 31 and the start of application of the voltage as the adsorption process of the electrostatic chuck system 30 or the film forming process of the film forming device 11 progresses. Controls the timing, voltage maintenance time, voltage application sequence, etc. For example, the voltage control unit 32 may independently control voltage application to a plurality of sub-electrode units 241 to 249 included in the electrode unit of the electrostatic chuck 24 for each sub-electrode unit. In this embodiment, the voltage control unit 32 is implemented separately from the control unit of the film forming apparatus 11, but the present invention is not limited to this and may be integrated into the control unit of the film forming apparatus 11.

The electrostatic chuck 24 includes an electrode unit that generates an electrostatic adsorption force for adsorbing an adsorption object (e.g., a substrate S, a mask M) on the adsorption surface, and the electrode unit includes a plurality of sub-electrode units 241 to 249. may include. For example, the electrostatic chuck 24 of the present embodiment operates in a direction parallel to the long side of the electrostatic chuck 24 (Y direction) and/or in a direction parallel to the short side of the electrostatic chuck 24, as shown in FIG. 3C. It includes a plurality of sub-electrode portions 241 to 249 divided along the (X direction).

Each sub-electrode unit includes an electrode pair 33 to which positive (first polarity) and negative (second polarity) potentials are applied to generate electrostatic adsorption force. For example, each electrode pair 33 includes a first electrode 331 to which a positive potential is applied and a second electrode 332 to which a negative potential is applied.

The first electrode 331 and the second electrode 332 each have a comb shape, as shown in FIG. 3C. For example, the first electrode 331 and the second electrode 332 each have a plurality of comb teeth and a base to which the plurality of comb teeth are connected. The base of each electrode 331, 332 supplies electric potential to a plurality of comb teeth, and the plurality of comb teeth generate an electrostatic adsorption force between the plurality of comb teeth and the object to be absorbed. Within one sub-electrode unit, each of the comb teeth of the first electrode 331 is alternately arranged to face each of the comb teeth of the second electrode 332. In this way, by forming the comb teeth of each electrode (331, 332) to face each other and be entangled with each other, the gap between the electrodes to which different potentials are applied can be narrowed, and a large unequal electric field is formed, which causes the substrate (S) to be moved by the gradient force. can be adsorbed.

In this embodiment, each electrode 331 and 332 of the sub-electrode portions 241 to 249 of the electrostatic chuck 24 is described as having a comb shape, but the present invention is not limited to this and the It can have various shapes as long as it can generate electrostatic attraction.

The electrostatic chuck 24 of this embodiment has a plurality of adsorption portions corresponding to a plurality of sub-electrode portions. For example, the electrostatic chuck 24 of this embodiment may have nine adsorption units corresponding to nine sub-electrode units 241 to 249, as shown in FIG. 3C, but is not limited thereto, and the substrate (S ) In order to more precisely control the adsorption, it may have a different number of adsorption units.

The adsorption unit may be installed to be divided into the long side direction (Y-axis direction) and the short side direction (X-axis direction) of the electrostatic chuck 24, but is not limited to this, and is divided only into the long side direction or the short side direction of the electrostatic chuck 24. It could be. The plurality of adsorption units may be implemented by physically having one plate having a plurality of electrode units, or by having a plurality of physically divided plates each having one or more electrode units.

For example, in the embodiment shown in FIG. 3C, each of the plurality of adsorption units may be implemented to correspond to each of a plurality of sub-electrode units, but one adsorption unit may be implemented to include a plurality of sub-electrode units.

That is, by controlling the application of voltage to the sub-electrode units 241 to 249 by the voltage control unit 32, the direction (Y-direction) intersecting the adsorption progress direction (X-direction) of the substrate S, as described later. The three sub-electrode units 241, 244, and 247 arranged as follows can form one adsorption unit. That is, each of the three sub-electrode parts 241, 244, and 247 can be independently controlled by voltage, but by controlling the voltage to be applied to these three sub-electrode parts 241, 244, and 247 at the same time, these three sub-electrode parts 241, 244, and 247 are controlled to apply voltage simultaneously. The electrode units 241, 244, and 247 can function as one adsorption unit. As long as the substrate can be adsorbed independently on each of the plurality of adsorption units, the specific physical structure and electrical circuit structure may be different.

<Adsorption and separation of substrate and mask using electrostatic chuck system>

Hereinafter, with reference to FIGS. 4 to 7, the process of adsorbing and separating the substrate S and the mask M to the electrostatic chuck 24 and the voltage control thereof will be described.

(Adsorption of substrate (S))

FIG. 4 shows a process of adsorbing the substrate S to the electrostatic chuck 24.

In this embodiment, as shown in FIG. 4, the entire surface of the substrate S is not simultaneously adsorbed to the lower surface of the electrostatic chuck 24, but is adsorbed from one end to the other along the first side (short side) of the electrostatic chuck 24. Adsorption proceeds sequentially toward . However, the present invention is not limited to this, and for example, the substrate may be adsorbed from one corner of the diagonal line of the electrostatic chuck 24 toward the other corner opposite it. Alternatively, adsorption of the substrate may proceed in all directions from the center of the electrostatic chuck 24 toward the edges.

In order to sequentially adsorb the substrate S along the first side of the electrostatic chuck 24, the order of applying the first voltage for adsorbing the substrate to the plurality of sub-electrode units 241 to 249 may be controlled. , the first voltage may be simultaneously applied to the plurality of sub-electrode units 241 to 249, but the structure or support force of the support portion of the substrate support unit 22 supporting the substrate S may be varied.

FIG. 4 shows an embodiment in which the substrate S is sequentially adsorbed to the electrostatic chuck 24 by controlling the voltage applied to the plurality of sub-electrode portions 241 to 249 of the electrostatic chuck 24. Here, three sub-electrode parts 241, 244, and 247 arranged along the long side direction (Y direction) of the electrostatic chuck 24 form the first adsorption part 41, and the central part of the electrostatic chuck 24 The explanation is given on the premise that the three sub-electrode parts 242, 245, and 248 form the second adsorption part 42, and the remaining three sub-electrode parts 243, 246, and 249 form the third adsorption part 43. do.

First, the substrate S is brought into the vacuum container 21 of the film forming apparatus 11 and placed on the support portion of the substrate support unit 22.

Next, the electrostatic chuck 24 descends and moves toward the substrate S placed on the support portion of the substrate support unit 22 (FIG. 4A).

When the electrostatic chuck 24 is sufficiently close to or in contact with the substrate S, the voltage control unit 32 applies the third adsorption force from the first adsorption unit 41 along the first side (short side) of the electrostatic chuck 24. The first voltage (ΔV1) is controlled to be applied sequentially toward the unit 43.

That is, the first voltage (ΔV1) is first applied to the first adsorption unit 41 (FIG. 4b), then the first voltage (ΔV1) is applied to the second adsorption unit 42 (FIG. 4c), and finally, The first voltage (ΔV1) is controlled to be applied to the third adsorption unit 43 (FIG. 4d).

The first voltage ΔV1 is set to a voltage sufficient to securely adsorb the substrate S to the electrostatic chuck 24.

As a result, the substrate S is adsorbed onto the electrostatic chuck 24 from the side corresponding to the first suction portion 41 of the substrate S, passing through the center of the substrate S to the third suction portion 43 side. (i.e., the adsorption of the substrate S progresses in the

In this embodiment, it has been described that the first voltage ΔV1 is applied while the electrostatic chuck 24 is sufficiently close to or in contact with the substrate S. However, before the electrostatic chuck 24 begins to descend toward the substrate S, The first voltage (ΔV1) may be applied before or during the fall.

At a predetermined point in time after the adsorption process of the substrate S to the electrostatic chuck 24 is completed, the voltage control unit 32 controls the voltage applied to the electrode portion of the electrostatic chuck 24, as shown in FIG. 4E. 1 The voltage (ΔV1) is lowered to the second voltage (ΔV2), which is smaller than the first voltage (ΔV1).

The second voltage ΔV2 is an adsorption maintenance voltage for maintaining the substrate S in a state adsorbed to the electrostatic chuck 24, and is the first voltage applied when adsorbing the substrate S to the electrostatic chuck 24 ( It is a voltage smaller than ΔV1). When the voltage applied to the electrostatic chuck 24 is lowered to the second voltage (ΔV2), the amount of polarized charge induced in the substrate (S) correspondingly decreases compared to the case where the first voltage (ΔV1) is applied, but the ) is once adsorbed to the electrostatic chuck 24 by the first voltage (ΔV1), the adsorption state of the substrate can be maintained even if a second voltage (ΔV2) lower than the first voltage (ΔV1) is applied.

In this way, the time required to separate the substrate from the electrostatic chuck 24 can be shortened by lowering the voltage applied to the electrode portion of the electrostatic chuck 24 to the second voltage ΔV2.

In the illustrated embodiment, the voltage applied to the first to third adsorption units 41 to 43 of the electrostatic chuck 24 is shown to be simultaneously lowered to the second voltage ΔV2, but the present invention is limited to this. This does not work, and the timing of lowering to the second voltage (ΔV2) or the magnitude of the applied second voltage (ΔV2) may be varied for each adsorption unit. For example, the voltage may be sequentially lowered to the second voltage ΔV2 from the first adsorption unit 41 to the third adsorption unit 43.

In this way, after the voltage applied to the electrode portion of the electrostatic chuck 24 is lowered to the second voltage ΔV2, the substrate S adsorbed on the electrostatic chuck 24 and the mask placed on the mask support unit 23 ( Adjust (align) the relative position of M). In this embodiment, it has been described that the relative position adjustment (alignment) between the substrate S and the mask M is performed after the voltage applied to the electrode portion of the electrostatic chuck 24 is lowered to the second voltage ΔV2. The invention is not limited to this, and the alignment process may be performed while the first voltage ΔV1 is applied to the electrode portion of the electrostatic chuck 24.

(Adsorption of mask (M))

After adsorption of the substrate S and adjustment of alignment with the mask M are completed, the mask M is additionally adsorbed to the electrostatic chuck 24 via the adsorbed substrate S. Specifically, by applying a third voltage (ΔV3) for adsorption of the mask M to the electrode part of the electrostatic chuck 24, the mask M is adsorbed to the electrostatic chuck 24 with the substrate S interposed therebetween. . That is, the mask M is adsorbed to the lower surface of the substrate S adsorbed on the electrostatic chuck 24.

Figure 5 shows the process of adsorbing the mask M to the electrostatic chuck 24.

First, the electrostatic chuck 24 on which the substrate S is adsorbed is lowered toward the mask M by the electrostatic chuck Z actuator 28 (FIG. 5A).

When the lower surface of the substrate S adsorbed on the electrostatic chuck 24 is sufficiently close to or in contact with the mask M, the voltage control unit 32 causes the voltage application unit 31 to be applied to the electrode portion of the electrostatic chuck 24. 3 Control to apply voltage (ΔV3).

The third voltage ΔV3 is preferably larger than the second voltage ΔV2, and is preferably large enough to allow the mask M to be charged by electrostatic induction via the substrate S. As a result, the mask M can be adsorbed to the electrostatic chuck 24 via the substrate S. However, the present invention is not limited to this, and the third voltage ΔV3 may have the same size as the second voltage ΔV2. Even if the third voltage ΔV3 has the same magnitude as the second voltage ΔV2, as described above, the lowering of the electrostatic chuck 24 causes a gap between the electrostatic chuck 24 or the substrate S and the mask M. Since the relative distance is narrowed, electrostatic induction can also occur in the mask M due to the polarized charge electrostatically induced on the substrate even without increasing the magnitude of the voltage applied to the electrode portion of the electrostatic chuck 24, and the mask ( An adsorption force sufficient to adsorb M) to the electrostatic chuck 24 via the substrate can be obtained.

The third voltage (ΔV3) may be smaller than the first voltage (ΔV1), or may be set to the same level as the first voltage (ΔV1) in consideration of shortening the process time (Tact).

In the mask adsorption process shown in FIG. 5, the voltage control unit 32 applies the third voltage ΔV3 to the entire electrostatic chuck 24 so that the mask M can be adsorbed to the lower surface of the substrate S without leaving wrinkles. It is not applied simultaneously, but is applied sequentially from the first adsorption unit 41 to the third adsorption unit 43 along the first side.

That is, the third voltage (ΔV3) is first applied to the first adsorption unit 41 (FIG. 5b), and then the third voltage (ΔV3) is applied to the second adsorption unit 42 (FIG. 5c). 3 Finally, the third voltage (ΔV3) is controlled to be applied to the adsorption unit 43 (FIG. 5d).

As a result, the mask M is adsorbed onto the electrostatic chuck 24 from the side corresponding to the first adsorption unit 41 of the mask M, passing through the center of the mask M to the third adsorption unit 43 side. (i.e., the adsorption of the mask M progresses in the .

In this embodiment, it is explained that the third voltage ΔV3 is applied while the electrostatic chuck 24 is sufficiently close to or in contact with the mask M. However, the electrostatic chuck 24 starts to descend toward the mask M. The third voltage ΔV3 may be applied before or during the fall.

At a predetermined point in time after the adsorption process of the mask M to the electrostatic chuck 24 is completed, the voltage control unit 32 controls the voltage applied to the electrode portion of the electrostatic chuck 24, as shown in FIG. 5E. 3 The voltage (ΔV3) is lowered to the fourth voltage (ΔV4), which is smaller than the third voltage (ΔV3).

The fourth voltage ΔV4 is an adsorption maintenance voltage for maintaining the adsorption state of the mask M adsorbed to the electrostatic chuck 24 through the substrate S, and is used to adsorb the mask M to the electrostatic chuck 24. It is a voltage lower than the third voltage (ΔV3) applied at the time. When the voltage applied to the electrostatic chuck 24 is lowered to the fourth voltage (ΔV4), the amount of charge induced in the mask (M) correspondingly decreases compared to the case where the third voltage (ΔV3) is applied, but the mask (M) Once the mask is adsorbed to the electrostatic chuck 24 by the third voltage ΔV3, the adsorption state of the mask can be maintained even if a fourth voltage ΔV4 lower than the third voltage ΔV3 is applied.

In this way, the time required to separate the mask M from the electrostatic chuck 24 can be reduced by lowering the voltage applied to the electrode portion of the electrostatic chuck 24 to the fourth voltage ΔV4.

In the illustrated embodiment, the voltage applied to the first to third adsorption units 41 to 43 of the electrostatic chuck 24 is simultaneously lowered to the fourth voltage ΔV4, but the present invention is not limited to this. Alternatively, the timing of lowering to the fourth voltage (ΔV4) or the magnitude of the applied fourth voltage (ΔV4) may be varied for each adsorption unit. For example, the voltage may be sequentially lowered to the fourth voltage ΔV4 from the first adsorption unit 41 to the third adsorption unit 43.

In this state, the mask M is adsorbed to the electrostatic chuck 24 through the substrate S, and the deposition material evaporated from the deposition source 25 is formed into a film on the substrate S through the mask M. It is done. In this embodiment, it has been explained that the mask M is held by the electrostatic adsorption force of the electrostatic chuck 24, but the present invention is not limited to this, and a magnet plate is additionally installed on the top of the electrostatic chuck 24 to hold the mask M. By applying magnetic force to the metal mask M using the plate, the mask M can be brought into closer contact with the substrate S more reliably.

(Separation of the substrate S and the mask M from the electrostatic chuck 24)

After the film forming process is completed with the substrate S and the mask M adsorbed on the electrostatic chuck 24, the voltage applied to the electrostatic chuck 24 is controlled to control the substrate adsorbed on the electrostatic chuck 24 ( Separate S) and mask (M) from the electrostatic chuck (24) again.

FIG. 6 shows a process of separating the substrate S and the mask M from the electrostatic chuck 24.

As shown in FIG. 6A, the voltage control unit 32 controls the voltage applied to the electrode portion of the electrostatic chuck 24 from the fourth voltage ΔV4, which is the above-mentioned adsorption holding voltage, to separate the mask M. Change to the fifth voltage (ΔV5) if possible. Here, the fifth voltage ΔV5 is a mask separation voltage for separating only the mask M adsorbed through the substrate S while maintaining the adsorption state of the substrate S by the electrostatic chuck 24. Accordingly, the fifth voltage ΔV5 is the third voltage ΔV3 applied when adsorbing the mask M to the electrostatic chuck 24 as well as the third voltage ΔV3 applied when adsorbing and maintaining the mask M to the electrostatic chuck 24. It is a voltage lower than the fourth voltage (ΔV4). In addition, the fifth voltage ΔV5 is a voltage at which the adsorption state of the substrate S by the electrostatic chuck 24 can be maintained even when the mask M is separated.

For example, the fifth voltage ΔV5 may be a voltage having substantially the same magnitude as the above-described second voltage ΔV2. However, this embodiment is not limited to this, and if only the mask M can be separated while maintaining the adsorption state of the substrate S by the electrostatic chuck 24, the fifth voltage ΔV5 is the second voltage ( It may have a magnitude higher or lower than ΔV2). However, even in this case, the fifth voltage (ΔV5) has a magnitude lower than the third voltage (ΔV3) and the fourth voltage (ΔV4).

When the voltage applied to the electrostatic chuck 24 is lowered to the fifth voltage ΔV5, which is substantially equal to the second voltage ΔV2, the amount of charge induced in the mask M correspondingly also decreases when the second voltage ΔV2 is applied. decreases to substantially the same extent as in the case of As a result, the adsorption state of the substrate S by the electrostatic chuck 24 continues to be maintained, but the adsorption state of the mask M cannot be maintained and is separated from the electrostatic chuck 24.

Although detailed illustration is omitted, in the process of FIG. 6A of lowering the voltage applied to the electrostatic chuck 24 to the fifth voltage ΔV5, which is the mask separation voltage, the fifth voltage ΔV5 is applied to each adsorption portion of the electrostatic chuck 24. It is desirable to control the lowering point differently. In particular, in the case of adsorbing the mask M by sequentially applying the mask adsorption voltage ΔV3 from the first adsorption unit 41 to the third adsorption unit 43 in the process of adsorbing the mask M as described above (Figure 5b to 5d), even when the mask M is separated, the mask separation voltage ΔV5 is controlled to be sequentially applied from the first adsorption unit 41 to the third adsorption unit 43 in the same manner. It is desirable to do so.

In other words, it is controlled so that the separation voltage is applied first to the area where the adsorption voltage is applied first.

The area of the mask M corresponding to the electrostatic chuck electrode portion to which the adsorption voltage is applied first (in the case of the above-described example, the first adsorption portion 41), the larger the area of the mask M corresponding to the electrostatic chuck electrode portion to which the adsorption voltage is applied later (in the case of the above-mentioned example, The period of adsorption on the electrostatic chuck 24 is longer than that of the mask M area corresponding to the third adsorption unit 43, and therefore the amount of polarized charge remaining in the corresponding area is correspondingly larger.

In the embodiment according to the present invention, the mask separation voltage ΔV5 is controlled to be applied sequentially from the area where the adsorption period is relatively long and the amount of polarization charge is large, so that the entire mask M is separated from the electrostatic chuck 24. The time until separation can be further shortened. In addition, by sequentially expanding the area to which the mask separation voltage ΔV5 is applied, starting from the area where the amount of polarized charge due to adsorption is large, separation from the electrostatic chuck 24 in the mask M plane is achieved. Timing can be equalized.

Meanwhile, in addition to varying the timing of lowering the fifth voltage ΔV5 for each adsorption unit of the electrostatic chuck 24, the magnitude of the applied fifth voltage ΔV5 may be varied for each adsorption unit. That is, in the case of the above-described example, a larger mask separation voltage (ΔV5) is applied to the electrostatic chuck electrode portion (first adsorption portion 41) to which the adsorption voltage is applied first, and the electrostatic chuck electrode portion (first adsorption portion 41) to which the adsorption voltage is applied later. Control may be performed so that a smaller mask separation voltage (ΔV5) is applied to the third adsorption unit 43. In this way, as described above, the magnitude of the fifth voltage ΔV5 applied as the mask separation voltage is controlled differently for each adsorption area in accordance with the order in which the adsorption voltage is applied within the voltage range that enables mask separation. The same effect can be achieved.

Returning to FIG. 6, when the mask M is separated in this way and only the substrate S is adsorbed and held by the electrostatic chuck 24, the electrostatic chuck adsorbs the substrate S by the electrostatic chuck Z actuator 28. (24) is raised (Figure 6b).

Next, the voltage control unit 32 changes the voltage applied to the electrode portion of the electrostatic chuck 24 from the fifth voltage ΔV5 to the sixth voltage ΔV6 (FIG. 6C). Here, the sixth voltage ΔV6 is a substrate separation voltage for separating the substrate S adsorbed on the electrostatic chuck 24 from the electrostatic chuck 24 . Accordingly, the sixth voltage ΔV6 is a voltage lower than the fifth voltage ΔV5 applied when only the substrate S is adsorbed and held by the electrostatic chuck 24.

For example, the voltage control unit 32 applies a voltage of zero (i.e., turns off) to the electrode part of the electrostatic chuck 24 as the sixth voltage ΔV6 or applies a voltage of opposite polarity to the electrode part of the electrostatic chuck 24 as the sixth voltage. It can also be applied as (ΔV6). As a result, the polarization charge induced in the substrate S is removed, and the substrate S is separated from the electrostatic chuck 24.

Although detailed illustration is omitted, in the process of FIG. 6C of lowering the voltage applied to the electrostatic chuck 24 to the sixth voltage ΔV6, which is the substrate separation voltage, the mask separation voltage (fifth voltage ΔV5) described above is also used. As in the case of application, the timing of lowering the sixth voltage (ΔV6) to the sixth voltage (ΔV6) can be varied for each adsorption part of the electrostatic chuck 24, or the magnitude of the applied sixth voltage (ΔV6) can be controlled differently for each adsorption part.

That is, in the case of adsorbing the substrate S by sequentially applying the substrate adsorption voltage ΔV1 from the first adsorption unit 41 to the third adsorption unit 43 (FIGS. 4b to 4d), (Reference), even when separating the substrate S, in the same manner, the substrate separation voltage ΔV6 is controlled to be applied sequentially from the first adsorption unit 41 to the third adsorption unit 43, or the substrate separation is performed. It is desirable to control the magnitude of the voltage (ΔV6) differently for each adsorption area according to the order in which the adsorption voltage is applied, within a voltage range that enables substrate separation.

As a result, as in the case of separating the mask M described above, the time until the entire substrate S is separated from the electrostatic chuck 24 can be further shortened, and also, the electrostatic discharge within the surface of the substrate S can be further shortened. The timing of separation from the chuck 24 can be equalized.

An example in which the application timing or magnitude of the fifth voltage (ΔV5), which is the mask separation voltage, and the sixth voltage (ΔV6), which is the substrate separation voltage, is controlled differently for each adsorption area has been described, but the present invention is not limited thereto. That is, in first separating the mask M from the electrostatic chuck 24 and then secondarily separating the substrate M, a plurality of adsorption regions (first adsorption portion 41) of the electrostatic chuck 24 are used. The voltage applied to the third adsorption unit 43) may be controlled by simultaneously lowering the mask separation voltage ΔV5 or the substrate separation voltage ΔV6.

Hereinafter, referring to FIG. 7, the control of the voltage applied to the electrode portion or sub-electrode portion of the electrostatic chuck 24 in the process of adsorbing and holding the substrate S and the mask M by the electrostatic chuck 24 will be discussed. Explain.

First, in order to adsorb the substrate S to the electrostatic chuck 24, a first voltage ΔV1 is applied to the electrode portion or sub-electrode portion of the electrostatic chuck 24 at a predetermined time point t1.

The first voltage ΔV1 has a size such that sufficient electrostatic adsorption force can be obtained to adsorb the substrate S to the electrostatic chuck 24, and the first voltage is applied to the electrode portion or sub-electrode portion of the electrostatic chuck 24. It is preferable that the voltage be as high as possible in order to shorten the time taken from when polarization charges are generated on the substrate S. For example, it is desirable to apply the maximum voltage (ΔVmax) that can be applied by the voltage application unit 31.

Subsequently, a polarized charge is induced on the substrate S by the applied first voltage and the substrate S is adsorbed to the electrostatic chuck 24 with sufficient electrostatic adsorption force (t=t2), and then the electrostatic chuck 24 The voltage applied to the electrode unit or sub-electrode unit is lowered to the second voltage (ΔV2). The second voltage ΔV2 may be the lowest voltage ΔVmin that can maintain the substrate S adsorbed on the electrostatic chuck 24.

Next, in order to adsorb the mask M to the electrostatic chuck 24 via the substrate S, the voltage applied to the electrode portion or sub-electrode portion of the electrostatic chuck 24 is increased to the third voltage ΔV3 (t =t3). Since the third voltage (ΔV3) is a voltage for adsorbing the mask (M) to the electrostatic chuck 24 via the substrate (S), it is preferable to have a size greater than the second voltage (ΔV2), and taking the process time into consideration, the voltage It is more preferable that this is the maximum voltage (ΔVmax) that the applicator 31 can apply.

In this embodiment, in order to shorten the time required to separate the substrate S and the mask M from the electrostatic chuck 24 after the film forming process, the voltage applied to the electrode portion or sub-electrode portion of the electrostatic chuck 24 is adjusted. Instead of maintaining the third voltage (ΔV3), it is lowered to a smaller fourth voltage (ΔV4) (t=t4). However, since the mask M must be able to maintain the state of being adsorbed to the electrostatic chuck 24 through the substrate S, the fourth voltage ΔV4 maintains the state in which only the substrate S is adsorbed to the electrostatic chuck 24. It is preferable that the voltage is higher than the second voltage (ΔV2) required to maintain it.

After the film forming process is completed (t5), in order to separate the mask M from the electrostatic chuck 24, first, the voltage applied to the electrode portion of the electrostatic chuck 24 can be maintained in an adsorption state of only the substrate S. Lower it to the fifth voltage (ΔV5). The fifth voltage ΔV5 is a voltage of substantially the same magnitude as the second voltage ΔV2 required to maintain the state in which the mask M is separated and only the substrate S is adsorbed to the electrostatic chuck 24. For example, the fifth voltage ΔV5 is preferably the minimum voltage ΔVmin required to maintain the state in which the mask M is separated and only the substrate S is adsorbed to the electrostatic chuck 24.

Accordingly, after the mask M is separated, the voltage applied to the electrode portion of the electrostatic chuck 24 is lowered to zero (i.e., turned off) or a voltage of opposite polarity is applied (t=t6 ). As a result, the polarization charge induced in the substrate S is removed, and the substrate S can be separated from the electrostatic chuck 24.

<Check the film formation process and mask adhesion>

Hereinafter, a film forming method according to the present embodiment and a method for confirming the adhesion state of the mask to the substrate before entering the film forming process and controlling re-adsorption when it is determined to be poor adhesion will be described.

With the mask M placed on the mask support unit 23 in the vacuum container 21, the substrate is transferred into the vacuum container 21 of the film forming apparatus 11 by the transfer robot 14 in the transfer chamber 13. is brought in

The hand of the transfer robot 14 that has entered the vacuum container 21 descends to place the substrate S on the support portion of the substrate support unit 22.

Then, after the electrostatic chuck 24 descends toward the substrate S and sufficiently approaches or contacts the substrate S, a first voltage ΔV1 is applied to the electrostatic chuck 24 to adsorb the substrate S. , When adsorption is completed, it is lowered to the second voltage (ΔV2) so that the substrate adsorption state can be maintained.

With the substrate S adsorbed on the electrostatic chuck 24, the substrate S is lowered toward the mask M in order to measure the relative positional deviation of the substrate S with respect to the mask M. When the substrate S is lowered to the measurement position, the alignment camera 20 photographs the alignment marks formed on the substrate S and the mask M through the alignment mark observation hole H to determine the relative positions of the substrate and the mask. Measure the discrepancy.

As a result of the measurement, if it is determined that the relative positional deviation of the substrate with respect to the mask exceeds the threshold, the substrate S adsorbed on the electrostatic chuck 24 is moved in the horizontal direction (XYθ direction) and the substrate is positioned with respect to the mask. Adjust (align).

After the alignment process, the third voltage ΔV3 is applied to the electrode portion or sub-electrode portion of the electrostatic chuck 24 to adsorb the mask M to the electrostatic chuck 24 via the substrate S, and the adsorption is completed. When this happens, it is lowered to the fourth voltage (ΔV4) so that the mask adsorption state can be maintained.

In this way, after the adsorption of the mask M is completed, the shutter of the deposition source 25 is opened and the deposition material is deposited on the substrate S through the mask M.

In the present invention, after the mask M is adsorbed to the substrate S as described above, before proceeding with the film forming process, the state of close contact of the mask M to the substrate S, that is, the mask M ) to check whether there are any wrinkles.

To this end, in one embodiment of the present invention, the alignment mark used when aligning the positions between the above-described substrate S and the mask M is used.

As described above, after adsorbing the substrate S to the electrostatic chuck 24 and before adsorbing the mask M through the substrate S, alignment marks formed on the substrate S and the mask M are respectively marked. An image is captured, and alignment is performed to adjust the relative positional error between the substrate S and the mask M using the captured image.

FIG. 8 is a top view conceptually showing the state in which the substrate S and the mask M are aligned through this alignment process. The circular mark Ps represents a substrate alignment mark formed on the substrate S, and the cross-shaped mark Pm represents a mask alignment mark formed on the mask M. As described above, the alignment marks Ps and Pm may be formed, for example, at four corners of the rectangular substrate S and mask M. In the alignment process, these alignment marks are photographed so that the relative positions of each corresponding alignment mark (Ps, Pm) are located within a predetermined range, for example, as shown in Figure 8 (a), the corresponding alignment mark ( Alignment is performed by relatively moving either the substrate S or the mask M adsorbed on the electrostatic chuck 24, or both, in the XYθ direction in a horizontal plane so that Ps and Pm) are located at substantially the same position.

After the alignment is completed in this way, as described above, the electrostatic chuck 24 on which the substrate S is adsorbed is lowered toward the mask M, and the mask adsorption voltage ΔV3 is applied to the electrostatic chuck 24. Thus, the mask (M) adsorption process proceeds.

In the present invention, during the mask M adsorption process, the method of applying the adsorption voltage with an electrostatic chuck is controlled to ensure that adsorption is performed without causing wrinkles in the mask M as much as possible. However, despite this, the substrate As (S) and mask (M) become larger, there is still a possibility that unexpected wrinkles may occur due to sagging due to its own weight, especially in the center of the mask (M).

Figure 9(a) shows a state in which wrinkles due to sagging remain in the central portion of the mask M. In this way, during the adsorption process, if wrinkles occur in the central part of the mask M, a certain pattern of deviation occurs in the alignment of the alignment marks Ps and Pm of the above-described substrate S and mask M. .

Figure 9(b) shows the misalignment pattern of the alignment marks (Ps, Pm) that appears when such a wrinkle occurs in the central part. As shown, when adsorption is performed with wrinkles formed in the center of the mask M, all of the plurality of mask alignment marks Pm formed on the periphery (e.g., four corners) of the mask M are attached to the substrate. Misalignment occurs in a form located relatively inside the alignment mark (Ps). This is different from, for example, Figures 10(a) and 10(b), which are examples where the entire mask M is misaligned in one direction. In particular, this occurs in the event of poor adsorption where wrinkles are left in the center of the mask M. It is a unique misalignment pattern.

In one embodiment of the present invention, before proceeding with the film forming process after adsorption of the mask M, the alignment marks Ps and Pm of the substrate S and the mask M are rephotographed, and the alignment marks Ps and By detecting whether a specific misalignment pattern as shown in FIG. 9(b) occurs in the alignment state of Pm), it is determined whether adsorption with wrinkles remaining in the center of the mask M was achieved during the adsorption process.

Therefore, according to one embodiment of the present invention, it is possible to easily check whether wrinkles occur in the central portion of the mask M before entering the film forming process.

If it is confirmed that wrinkles have occurred in the center of the mask M during adsorption, the mask M can be separated from the electrostatic chuck 24 and then re-adsorbed according to the above-described adsorption/separation process.

That is, by applying the mask separation voltage ΔV5 to the electrostatic chuck 24, only the mask M is separated while the substrate S is adsorbed on the electrostatic chuck 24, and then through the mask adsorption process described above. Re-adsorb the mask (M). During re-adsorption, the adsorption process conditions are changed to prevent wrinkles from occurring in the center of the mask M. That is, as described above, the mask adsorption process involves applying a mask adsorption voltage ΔV3 to the electrostatic chuck 24 while moving the electrostatic chuck 24 on which the substrate S is adsorbed close to the mask M. This is done in this way, by changing the relative movement speed or the magnitude of the applied adsorption voltage (ΔV3) at which the electrostatic chuck 24 and the mask M, on which the substrate S is adsorbed, approach each other, It can help prevent wrinkles. Specifically, the relative moving speed at which the electrostatic chuck 24 on which the substrate S is adsorbed and the mask M approach each other is made slower than the speed at the time of the previous mask adsorption, or the size of the mask adsorption voltage ΔV3 is adjusted to the previous mask adsorption speed. By setting the size lower than the speed during adsorption, the re-adsorption process can proceed more stably and wrinkles on the mask can be more reliably prevented.

In this way, according to one embodiment of the present invention, it is possible to easily check whether wrinkles have occurred in the central portion of the mask M before entering the film forming process, and if it is confirmed that wrinkles have occurred, the mask M is once removed. After separation, by re-adsorbing under different adsorption process conditions, it is possible to effectively prevent film formation defects due to poor adhesion in advance.

Although an example of a configuration for checking whether wrinkles occur in the center of the mask M before film deposition after mask adsorption according to an embodiment of the present invention has been described above, the present invention is not limited to the configuration of this example. For example, the above-described embodiment was configured to observe the alignment marks (Ps, Pm) on the substrate (S) and the mask (M) and determine whether or not wrinkles would occur from the misalignment pattern of these marks. However, other embodiments of the present invention Alternatively, a separate optical means may be disposed on the side or bottom of the vacuum container 21 to determine whether or not wrinkles have occurred from an image directly taken of the physical shape of the mask M itself by the optical means. In other words, it may be configured to directly photograph/observe, not the mark formed on the mask, but the sagging shape of the central part of the mask itself, as shown in FIG. 9(a), when wrinkles occur, using optical means.

In addition, in the above-described embodiment, the case of using an electrostatic chuck as a means for adsorbing the substrate and the mask has been described, but the present invention is not limited to this. For example, as a modification, even when a magnet is placed on the opposite side of the mask with a substrate in between, instead of an electrostatic chuck, and the magnetic force generated by this magnet is used to adsorb the mask through the substrate, the degree of adhesion between the substrate and the mask is confirmed. The present invention can be applied as a configuration for the following. In this modification, the substrate is supported by holding means such as a substrate holder and placed on the mask, and then, as a result of the mask adsorption by the magnet, close contact with the mask is achieved, and the substrate itself is adsorbed. Separate means for this may not be provided.

After the adsorption of the mask (M) is completed to ensure that no wrinkles remain in the center through confirmation of wrinkles after the above adsorption and re-adsorption when wrinkles occur, a film forming process is performed to deposit the deposition material on the substrate (S) through the mask (M). When deposition is achieved to the desired thickness, the voltage applied to the electrode portion or sub-electrode portion of the electrostatic chuck 24 is lowered to the fifth voltage ΔV5 to separate the mask M, and the substrate is placed on the electrostatic chuck 24. In the state in which only the substrate is adsorbed, the substrate is raised by the electrostatic chuck Z actuator 28.

Next, the hand of the transfer robot 14 enters the vacuum container 21 of the film forming apparatus 11, and a voltage (ΔV6) of zero (0) or reverse polarity is applied to the electrode portion or sub-electrode portion of the electrostatic chuck 24. When applied (t6), the substrate is separated from the electrostatic chuck 24. Thereafter, the substrate on which deposition has been completed is transported from the vacuum container 21 by the transfer robot 14.

<Manufacturing method of electronic devices>

Next, an example of an electronic device manufacturing method using the film forming apparatus of this embodiment will be described. Hereinafter, the configuration and manufacturing method of an organic EL display device will be illustrated as an example of an electronic device.

First, the organic EL display device to be manufactured will be described. FIG. 11(a) shows the overall view of the organic EL display device 60, and FIG. 11(b) shows the cross-sectional structure of one pixel.

As shown in FIG. 11(a), a plurality of pixels 62 having a plurality of light-emitting elements are arranged in a matrix form in the display area 61 of the organic EL display device 60. Details will be described later, but each light emitting device has a structure including an organic layer sandwiched between a pair of electrodes. In addition, the pixel referred to here refers to the minimum unit that enables display of a desired color in the display area 61. In the case of the organic EL display device according to this embodiment, the pixel 62 is composed of a combination of a first light-emitting element 62R, a second light-emitting element 62G, and a third light-emitting element 62B that emit different light. It is done. The pixel 62 is often composed of a combination of a red light-emitting element, a green light-emitting element, and a blue light-emitting element, but may also be a combination of a yellow light-emitting element, a cyan light-emitting element, and a white light-emitting element, and is particularly limited as long as it is of at least one color. no.

FIG. 11(b) is a partial cross-sectional schematic diagram taken along line A-B in FIG. 11(a). The pixel 62 has an organic EL element including an anode 64, a hole transport layer 65, light emitting layers 66R, 66G, 66B, an electron transport layer 67, and a cathode 68 on a substrate 63. . Among these, the hole transport layer 65, the light emitting layer 66R, 66G, and 66B, and the electron transport layer 67 correspond to the organic layer. Additionally, in this embodiment, the light-emitting layer 66R is an organic EL layer that emits red, the light-emitting layer 66G is an organic EL layer that emits green, and the light-emitting layer 66B is an organic EL layer that emits blue. The light-emitting layers 66R, 66G, and 66B are formed in patterns corresponding to light-emitting elements (sometimes called organic EL elements) that emit red, green, and blue colors, respectively. Additionally, the anode 64 is formed separately for each light emitting element. The hole transport layer 65, the electron transport layer 67, and the cathode 68 may be formed in common with the plurality of light-emitting elements 62R, 62G, and 62B, or may be formed for each light-emitting element. Additionally, in order to prevent the anode 64 and the cathode 68 from being short-circuited by foreign substances, an insulating layer 69 is provided between the anode 64. Additionally, since the organic EL layer is deteriorated by moisture and oxygen, a protective layer 70 is provided to protect the organic EL element from moisture and oxygen.

In FIG. 11(b), the hole transport layer 65 or the electron transport layer 67 is shown as one layer, but depending on the structure of the organic EL display device, it may be formed of multiple layers including a hole blocking layer or an electron blocking layer. It may be possible. In addition, a hole injection layer having an energy band structure that can ensure smooth injection of holes from the anode 64 to the hole transport layer 65 may be formed between the anode 64 and the hole transport layer 65. . Likewise, an electron injection layer may be formed between the cathode 68 and the electron transport layer 67.

Next, an example of a manufacturing method for an organic EL display device will be described in detail.

First, a substrate 63 on which a circuit (not shown) and an anode 64 for driving an organic EL display device are formed is prepared.

An acrylic resin is spin-coated on the substrate 63 on which the anode 64 is formed, and the acrylic resin is patterned by lithography to form an opening in the area where the anode 64 is formed to form an insulating layer 69. This opening corresponds to the light emitting area where the light emitting element actually emits light.

The substrate 63 on which the insulating layer 69 has been patterned is loaded into the first organic material film forming apparatus, the substrate is held by a substrate holding unit and an electrostatic chuck, and the hole transport layer 65 is placed on the anode 64 in the display area. The film is formed as a common layer. The hole transport layer 65 is formed by vacuum deposition. In reality, since the hole transport layer 65 is formed to a size larger than the display area 61, a high-precision mask is not required.

Next, the substrate 63 formed up to the hole transport layer 65 is loaded into the second organic material film forming apparatus and held by a substrate holding unit and an electrostatic chuck. The substrate and the mask are aligned, the substrate is placed on the mask, and a red-emitting light-emitting layer 66R is formed on the portion of the substrate 63 where the red-emitting element is placed.

As with the deposition of the light-emitting layer 66R, the light-emitting layer 66G emitting green color is formed into a film using the third organic material film forming device, and further, the light emitting layer 66B emitting blue color is formed into a film using the fourth organic material film forming device. After the film formation of the light emitting layers 66R, 66G, and 66B is completed, the electron transport layer 67 is formed over the entire display area 61 by the fifth organic material film forming apparatus. The electron transport layer 67 is formed as a common layer for the three color light emitting layers 66R, 66G, and 66B.

The substrate on which the electron transport layer 67 has been formed is moved to a metallic vapor deposition material deposition apparatus to form a cathode 68.

Afterwards, it is transferred to a plasma CVD device to form a protective layer 70, thereby completing the organic EL display device 60.

From the time the substrate 63 on which the insulating layer 69 was patterned is brought into the film formation apparatus until the film formation of the protective layer 70 is completed, when exposed to an atmosphere containing moisture or oxygen, a light emitting layer made of an organic EL material is formed. There is a risk of deterioration due to moisture or oxygen. Therefore, in this example, the loading and unloading of the substrate between film forming devices is performed under a vacuum atmosphere or an inert gas atmosphere.

The above embodiment shows an example of the present invention, and the present invention is not limited to the configuration of the above embodiment, and may be appropriately modified within the scope of the technical idea.

S: substrate
M: mask
20: Optical means
24: electrostatic chuck
PS: Board alignment mark
Pm: Mask alignment mark

Claims (37)

An adsorption system for adsorbing a first adsorbent and a second adsorbent, comprising:
an electrostatic chuck for adsorbing the first object to be absorbed and the second object to be absorbed through the first object;
Optical means for photographing at least the first object to be absorbed and the second object to be absorbed while the first object and the second object to be absorbed are adsorbed by the electrostatic chuck;
Determination means for determining whether the first object to be absorbed and the second object to be absorbed are in close contact, based on the image acquired by the optical means;
When it is determined by the determination means that the first object to be absorbed and the second object to be absorbed are not in close contact, the second object to be absorbed is separated from the electrostatic chuck, and then the electrostatic chuck is passed through the first object to be absorbed. It includes control means for controlling the second adsorbent to be re-adsorbed,
The control means determines that the second object to be absorbed is not in close contact, and moves the electrostatic chuck on which the first object to be absorbed toward the second object to re-adsorb the second object. An adsorption system characterized in that the adsorption speed is set to a lower speed than the initial adsorption speed. According to paragraph 1,
The optical means photographs a first absorption object alignment mark formed on the first absorption object and a second absorption object alignment mark formed on the second absorption object corresponding to the first absorption object alignment,
The determination means determines whether the first object to be absorbed and the second object to be absorbed are in close contact based on a pattern of misalignment between the alignment mark of the first object to be absorbed and the alignment mark of the second object to be absorbed in the acquired image. An adsorption system characterized by determining whether or not. According to paragraph 2,
After the first absorbent object is adsorbed and before the second absorbent object is adsorbed, the position of the first absorbent object alignment mark and the corresponding position of the second absorbent alignment mark are aligned. It further comprises an alignment means for adjusting the position between the complex and the second adsorbed body,
The first adsorbent alignment mark includes a plurality of first adsorbent alignment marks formed on opposite ends of the first adsorbent,
The first adsorbent alignment mark includes a plurality of second adsorbent alignment marks formed on opposite ends of the second adsorbent body, corresponding to each of the plurality of first adsorbent alignment marks,
The determination means determines that, in the acquired image, the second absorbent body alignment marks formed on opposite ends of the second absorbent body are the corresponding first absorbent body alignment marks whose positions have been adjusted by the alignment means. An adsorption system characterized by determining that the second adsorbent is not in close contact with the first adsorbent when a displacement pattern is obtained in which the second adsorbed member is shifted inward toward the center of the second adsorbed member. According to paragraph 3,
The first adsorbent alignment mark is formed on two opposing corner portions of the first adsorbent, and the second adsorbent alignment mark is formed on two opposing corners of the second adsorbent. An adsorption system characterized in that it is formed at each corner. According to paragraph 3,
The first absorption target alignment mark is formed at each of four corners of the first absorption target, and the second absorption target alignment mark is formed at each of the four corners of the second absorption target. An adsorption system characterized in that it is formed. delete delete delete According to paragraph 1,
The optical means is characterized in that it photographs the second object to be absorbed by the first object to be absorbed from the side of the second object to be absorbed or from the non-adsorption surface side opposite to the surface of the object to be absorbed by the first object. adsorption system. An adsorption system for adsorbing a first adsorbent and a second adsorbent, comprising:
Adsorption means for adsorbing the second adsorbed body via the first adsorbed body,
Optical means for photographing at least the second object to be absorbed while the second object to be absorbed is adsorbed via the first object by the adsorption means;
Determination means for determining whether the first object to be absorbed and the second object to be absorbed are in close contact, based on the image acquired by the optical means;
When it is determined by the determination means that the first adsorbed body and the second adsorbed body are not in close contact, the second adsorbed body is separated from the adsorption means and then passed through the first adsorbed body to the adsorption means. It includes control means for controlling the second adsorbent to be re-adsorbed,
The control means determines that the second object to be absorbed is not in close contact, and when re-adsorbing the second object, the control means moves the suction means to which the first object to be absorbed is directed toward the second object. An adsorption system characterized in that the adsorption speed is set to a lower speed than the initial adsorption speed. A film forming device for forming a film on a substrate through a mask, comprising:
An adsorption system that adsorbs the mask as a second adsorbent via the substrate as a first adsorbent,
The film forming apparatus is characterized in that the adsorption system is the adsorption system according to any one of claims 1 to 5, 9, and 10. A method for adsorbing a first adsorbent and a second adsorbent,
adsorbing the first adsorption object by an electrostatic chuck;
Adsorbing a second object to be absorbed via the first object to be absorbed by the electrostatic chuck;
an imaging step of photographing at least the second absorbent body by optical means;
A determination step of determining whether the first object to be absorbed and the second object to be absorbed are in close contact, based on the image acquired by the optical means;
If it is determined in the determination step that the first object to be absorbed and the second object to be absorbed are not in close contact, the second object to be absorbed is separated from the electrostatic chuck, and then connected to the electrostatic chuck via the first object to be absorbed. Comprising the step of re-adsorbing the second adsorbent,
The step of adsorbing the second adsorbent via the first adsorbent includes moving the electrostatic chuck on which the first adsorbent is adsorbed toward the second adsorbent and applying a second adsorbent adsorption voltage to the electrostatic chuck. This is the approval stage,
In the step of determining that the second object to be absorbed is not in close contact with the second object and re-adsorbing the second object, the speed of moving the electrostatic chuck to which the first object is adsorbed toward the second object is adjusted to An adsorption method characterized in that the second adsorbed body is adsorbed at a lower speed than during adsorption. According to clause 12,
The photographing step by the optical means includes photographing a first absorbent body alignment mark formed on the first absorbed body and a second absorbed body alignment mark formed on the second absorbed body corresponding to the first absorbed body alignment mark. It's a step,
The determination step determines whether the first object to be absorbed and the second object to be absorbed are in close contact based on a pattern of misalignment between the alignment mark of the first object to be absorbed and the alignment mark of the second object to be absorbed in the acquired image. An adsorption method characterized by determining whether or not. According to clause 13,
After the step of adsorbing the first adsorbent and before the step of adsorbing the second adsorbent, the position of the first adsorbent alignment mark and the corresponding position of the second adsorbent alignment mark are aligned, Further comprising an alignment step of adjusting the position between the first absorbent body and the second absorbent body,
The first absorbent body alignment mark includes a plurality of first absorbed body alignment marks formed on both opposite ends of the first absorbed body,
The second absorbent body alignment mark includes a plurality of second absorbed body alignment marks formed on opposite ends of the second absorbed body, corresponding to each of the plurality of first absorbed body alignment marks,
The determination step is such that, in the acquired image, the second absorbent body alignment mark formed on both opposing ends of the second absorbent body is greater than the corresponding first absorbent body alignment mark whose position is adjusted in the alignment step. An adsorption method characterized by determining that the second adsorbent is not in close contact with the first adsorbent when a displacement pattern is positioned inwardly shifted toward the center of the second adsorbed member. According to clause 14,
The first adsorbent alignment mark is formed on two opposing corner portions of the first adsorbent, and the second adsorbent alignment mark is formed on two opposing corners of the second adsorbent. An adsorption method characterized in that it is formed at each corner. According to clause 14,
The first absorption target alignment mark is formed at each of four corners of the first absorption target, and the second absorption target alignment mark is formed at each of the four corners of the second absorption target. An adsorption method characterized in that it is formed. delete delete delete According to clause 12,
The photographing step by the optical means is performed by viewing the second absorbent object adsorbed on the first absorbent object from the side of the second absorbent object or the surface side of the second absorbent object opposite to the adsorption surface with the first absorbent object. An adsorption method characterized by a step of photographing the complex. A method for adsorbing a first adsorbent and a second adsorbent,
adsorbing a second adsorbent via the first adsorbent by means of adsorption means;
imaging at least the second absorbent body by optical means;
Based on the image acquired by the optical means, determining whether the first object to be absorbed and the second object to be absorbed are in close contact;
In the determination step, when it is determined that the first absorbed body and the second absorbed body are not in close contact, the second absorbed body is separated from the adsorption means and then passed through the first adsorbed body to the adsorption means. It includes the step of re-adsorbing the second adsorbed body,
The step of adsorbing the second adsorbent via the first adsorbent includes moving the adsorption means on which the first adsorbent is adsorbed toward the second adsorbent and applying a second adsorbent adsorption voltage to the adsorption means. This is the approval stage,
In the step of determining that the second object to be absorbed is not in close contact and re-adsorbing the second object, the speed of moving the adsorption means to which the first object to be absorbed is moved toward the second object to be absorbed is set to An adsorption method characterized in that the second adsorbed body is adsorbed at a lower speed than during adsorption. A deposition method for depositing a deposition material on a substrate through a mask, comprising:
Adsorbing the mask as a second adsorbent via the substrate as a first adsorbent using the adsorption method according to any one of claims 12 to 16, 20, and 21;
A film forming method comprising the step of releasing the deposition material in a state in which the mask is adsorbed and forming the deposition material on the substrate through the mask. A method of manufacturing an electronic device, characterized in that the electronic device is manufactured using the film forming method of claim 22.
An adsorption system for adsorbing a first adsorbent and a second adsorbent, comprising:
an electrostatic chuck for adsorbing the first object to be absorbed and the second object to be absorbed through the first object;
Optical means for photographing at least the first object to be absorbed and the second object to be absorbed while the first object and the second object to be absorbed are adsorbed by the electrostatic chuck;
Determination means for determining whether the first object to be absorbed and the second object to be absorbed are in close contact, based on the image acquired by the optical means;
When it is determined by the determination means that the first object to be absorbed and the second object to be absorbed are not in close contact, the second object to be absorbed is separated from the electrostatic chuck, and then the electrostatic chuck is passed through the first object to be absorbed. It includes control means for controlling the second adsorbent to be re-adsorbed,
The control means determines that the second object to be absorbed is not in close contact, and in re-adsorbing the second object, the control means adjusts the adsorption voltage of the second object to be applied to the electrostatic chuck to a level lower than that at the time of initial adsorption. An adsorption system characterized in that. According to clause 24,
The optical means photographs a first absorption object alignment mark formed on the first absorption object and a second absorption object alignment mark formed on the second absorption object corresponding to the first absorption object alignment,
The determination means determines whether the first object to be absorbed and the second object to be absorbed are in close contact based on a pattern of misalignment between the alignment mark of the first object to be absorbed and the alignment mark of the second object to be absorbed in the acquired image. An adsorption system characterized by determining whether or not. According to clause 25,
After the first absorbent object is adsorbed and before the second absorbent object is adsorbed, the position of the first absorbent object alignment mark and the corresponding position of the second absorbent alignment mark are aligned. It further comprises an alignment means for adjusting the position between the complex and the second adsorbed body,
The first adsorbent alignment mark includes a plurality of first adsorbent alignment marks formed on opposite ends of the first adsorbent,
The first adsorbent alignment mark includes a plurality of second adsorbent alignment marks formed on opposite ends of the second adsorbent body, corresponding to each of the plurality of first adsorbent alignment marks,
The determination means determines that, in the acquired image, the second absorbent body alignment marks formed on opposite ends of the second absorbent body are the corresponding first absorbent body alignment marks whose positions have been adjusted by the alignment means. An adsorption system characterized by determining that the second adsorbent is not in close contact with the first adsorbent when a displacement pattern is obtained in which the second adsorbed member is shifted inward toward the center of the second adsorbed member. According to clause 26,
The first adsorbent alignment mark is formed on two opposing corner portions of the first adsorbent, and the second adsorbent alignment mark is formed on two opposing corners of the second adsorbent. An adsorption system characterized in that it is formed at each corner. According to clause 26,
The first absorption target alignment mark is formed at each of four corners of the first absorption target, and the second absorption target alignment mark is formed at each of the four corners of the second absorption target. An adsorption system characterized in that it is formed. According to clause 24,
The optical means is characterized in that it photographs the second object to be absorbed by the first object to be absorbed from the side of the second object to be absorbed or from the non-adsorption surface side opposite to the surface of the object to be absorbed by the first object. adsorption system. A method for adsorbing a first adsorbent and a second adsorbent,
adsorbing the first adsorption object by an electrostatic chuck;
Adsorbing a second object to be absorbed via the first object to be absorbed by the electrostatic chuck;
an imaging step of photographing at least the second absorbent body by optical means;
A determination step of determining whether the first object to be absorbed and the second object to be absorbed are in close contact, based on the image acquired by the optical means;
If it is determined in the determination step that the first object to be absorbed and the second object to be absorbed are not in close contact, the second object to be absorbed is separated from the electrostatic chuck, and then connected to the electrostatic chuck via the first object to be absorbed. Comprising the step of re-adsorbing the second adsorbent,
The step of adsorbing the second adsorbent via the first adsorbent includes moving the electrostatic chuck on which the first adsorbent is adsorbed toward the second adsorbent and applying a second adsorbent adsorption voltage to the electrostatic chuck. This is the approval stage,
In the step of re-adsorbing the second adsorbent by determining that the second adsorbent is not in close contact, the adsorption voltage of the second adsorbent applied to the electrostatic chuck is set to a level lower than that at the time of initial adsorption, so that the second adsorbent is adsorbed. An adsorption method characterized by adsorbing an adsorbent. According to clause 30,
The photographing step by the optical means includes photographing a first absorbent body alignment mark formed on the first absorbed body and a second absorbed body alignment mark formed on the second absorbed body corresponding to the first absorbed body alignment mark. It's a step,
The determination step determines whether the first absorbed body and the second absorbed body are in close contact based on a pattern of misalignment between the first absorbed body alignment mark and the second absorbed body alignment mark in the acquired image. An adsorption method characterized by determining whether or not. According to clause 31,
After the step of adsorbing the first adsorbent and before the step of adsorbing the second adsorbent, the position of the first adsorbent alignment mark and the corresponding position of the second adsorbent alignment mark are aligned, Further comprising an alignment step of adjusting the position between the first absorbent body and the second absorbent body,
The first absorbent body alignment mark includes a plurality of first absorbed body alignment marks formed on both opposite ends of the first absorbed body,
The second absorbent body alignment mark includes a plurality of second absorbed body alignment marks formed on opposite ends of the second absorbed body, corresponding to each of the plurality of first absorbed body alignment marks,
The determination step is such that, in the acquired image, the second absorbent body alignment mark formed on both opposing ends of the second absorbent body is greater than the corresponding first absorbent body alignment mark whose position is adjusted in the alignment step. An adsorption method characterized by determining that the second adsorbent is not in close contact with the first adsorbent when a displacement pattern is positioned inwardly shifted toward the center of the second adsorbed member. According to clause 32,
The first adsorbent alignment mark is formed on two opposing corner portions of the first adsorbent, and the second adsorbent alignment mark is formed on two opposing corners of the second adsorbent. An adsorption method characterized in that it is formed at each corner. According to clause 32,
The first absorption target alignment mark is formed at each of four corners of the first absorption target, and the second absorption target alignment mark is formed at each of the four corners of the second absorption target. An adsorption method characterized in that it is formed. According to clause 30,
The photographing step by the optical means is performed by viewing the second absorbent object adsorbed on the first absorbent object from the side of the second absorbent object or the surface side of the second absorbent object opposite to the adsorption surface with the first absorbent object. An adsorption method characterized by a step of photographing the complex. A deposition method for depositing a deposition material on a substrate through a mask, comprising:
Adsorbing the mask as a second adsorbent via the substrate as a first adsorbent using the adsorption method according to any one of claims 30 to 35;
A film forming method comprising the step of releasing the deposition material in a state in which the mask is adsorbed and forming the deposition material on the substrate through the mask. A method of manufacturing an electronic device, characterized in that the electronic device is manufactured using the film forming method of claim 36.

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