JP2003332215A - Processing method, method of manufacturing semiconductor device, and processing device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To restrain particles from attaching on a substrate when a region of a film formed on a substrate to be processed is selectively processed. <P>SOLUTION: A film processing method comprises a first process of selectively processing the processed films 105 and 106 located in a processing region by relatively irradiating the substrate with first processing light rays 110 whose irradiation shape on the substrate is smaller than the processing region and a second process of selectively processing the processed films 105 and 106 by irradiating the processing region with second processing light rays 112. <P>COPYRIGHT: (C)2004,JPO

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to a processing method for selectively processing a processed film formed on a substrate, a method for manufacturing a semiconductor device, and a processing apparatus.

[0002]

2. Description of the Related Art Generally, as semiconductor devices are miniaturized,
In the lithography process, it is essential to improve the precision of the alignment technology with the lower layer. Up to now, when performing alignment for aligning the positions of the pattern already formed on the substrate and the pattern to be exposed at the time of exposure, a dedicated scope for detecting the alignment mark position has been used. However, in this method, since an offset always exists between the alignment scope and the exposure axis, the alignment scope and the exposure axis are misaligned due to the influence of thermal drift or the like, and alignment mark position misalignment occurs. Therefore, as semiconductors have been miniaturized, there has been a problem that the amount of misalignment of alignment positions greatly affects the yield of chips.

In order to improve this, an ETTR (Exposure Through) is used for coaxially detecting and exposing an alignment mark.
The Reticle method is considered to be a promising next-generation alignment technology. While the ETTR method can achieve high-precision alignment, since it uses the same wavelength light source in the DUV region as the exposure, the anti-reflection film formed in the resist lower layer absorbs more light, and The problem is that it cannot detect the position information of. Similarly, even if the film formed on the alignment mark is an organic insulating film or an interlayer insulating film such as SiN or SiC that is opaque to the exposure light, the position information of the alignment mark cannot be acquired. Further, even when the alignment by ETTR is not performed, the alignment position information cannot be acquired even when the contrast of the alignment light is weak.

To solve this problem, there has been proposed a method of selectively removing the opaque film formed on the alignment mark by laser irradiation before the alignment process. However, this method has a problem that particles generated during laser processing adhere to the device pattern area and become a fatal defect.

[0005]

As described above, there has been a problem that particles generated when selectively processing a processed film in a processing region adhere to the outside of the processing region and cause defects.

An object of the present invention is to provide a processing method, a semiconductor device manufacturing method, and a processing apparatus capable of suppressing particles generated during processing from adhering to the outside of the processing region.

[0007]

The present invention is configured as follows to achieve the above object.

(1) A processing method for selectively removing or reducing a processing region of a processing film formed on a substrate according to an example of the present invention, the irradiation shape on the substrate A step of scanning a first processing light smaller than the processing area relative to the substrate to selectively process a processing film in the processing area; and a second processing in an area inside the processing area. And irradiating the processing light to selectively process the processed film in a region inside the processed region.

(2) The processing method according to an example of the present invention is
Forming a first film on the substrate, and forming a second film on the first film.
Forming the film, and selectively irradiating the substrate with a processing energy ray to vaporize the first film while maintaining the second film and remove a part of the second film. Alternatively, a step of performing processing for reducing the film thickness is included.

(3) A processing apparatus for selectively processing a processing region of a processing film formed on a substrate according to an example of the present invention includes a substrate holding section for holding the substrate and a part of the processing film. A radiation source that generates an energy ray that selectively reduces or removes the energy ray, and a shaping unit that is disposed on the optical axis of the energy ray and that shapes the energy ray generated by the light source,
A scanning unit that relatively scans the energy beam formed by the forming unit with respect to the substrate, and a processing region surface of the substrate while changing the flow direction of the liquid according to the scanning direction of energy by the scanning unit. And a liquid supply section for continuously supplying liquid.

(4) A processing apparatus for selectively processing a processing region of a processing film formed on a substrate according to an example of the present invention includes a substrate holding section for holding the substrate and a part of the processing film. Is arranged on the optical axis of the energy beam to form an energy beam that selectively reduces or eliminates the energy beam generated by the radiation source, and the irradiation shape on the substrate is periodic. And a scanning unit for scanning the energy beam relative to the substrate at a period of the cycle or less.

[0012]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings.

(First Embodiment) FIGS. 1 and 2 are process sectional views showing a manufacturing process of a semiconductor device according to a first embodiment of the present invention. As shown in FIG. 1A, the substrate 10
Prepare 0. The substrate 100 is a semiconductor substrate 10 such as Si.
The alignment mark 102 is embedded in the first layer. Wiring pattern 10 formed on semiconductor substrate 101
An interlayer insulating film 104 is formed so as to cover 3. The wiring pattern 103 is formed in the device area, and the alignment mark 102 is formed around the device area.

Then, as shown in FIG. 1B, an antireflection film 105 having a film thickness of 100 nm and a chemically amplified positive resist film 106 having a film thickness of 300 nm are sequentially formed on the interlayer insulating film 104. The antireflection film 105 is formed by spin coating an organic material. The chemically amplified positive resist film 106 is a resist for ArF light (wavelength 193 nm).

Before performing the alignment by the ETTR alignment method, the antireflection film 105 and the resist film 1 on the alignment mark 102 having a low transmittance for the exposure light.
It is necessary to selectively remove 06.

The region including the alignment mark 102 observed by the ETTR alignment method is, for example, 100 μm.
m × 200 μm. Therefore, this 100 μm × 20
The opaque film in the 0 μm area is removed.

Next, the structure of a laser processing apparatus for selectively removing the antireflection film 105 and the resist film 106 on the alignment mark 102 will be described. FIG. 3 is a diagram showing the configuration of the optical processing apparatus according to the first embodiment of the present invention.

The optical processing apparatus 200, as shown in FIG.
A laser optical system 210, an observation system 220, and a laser processing section 230 are provided. First, the configuration of the laser optical system 210 will be described.

The laser optical system 210 includes a laser oscillator 211, a laser oscillator control unit 212 for controlling the laser oscillator 211, an optical system 214 for controlling a laser beam 213 oscillated from the laser oscillator 211, and an optical system 2.
An optical shape shaping section 215 for controlling the shape of the laser beam 213 having passed through 14 and a condenser lens 216 are provided.

The laser beam 213 emitted from the laser oscillator 211 sequentially passes through the optical system 214, the optical shape forming section 215, and the condenser lens 216, respectively, and the processed surface 100a of the substrate 100 installed in the laser processing section 230.
Is irradiated. The observation system 220 is inserted between the optical shape forming section 215 and the condenser lens 216.

As the laser oscillator 211, for example, Q-
A Switch Nd-YAG laser oscillator is used. The laser light oscillated from this Q-Switch Nd-YAG laser oscillator has a fundamental wave (wavelength 1064n).
m), the second harmonic (wavelength 532 nm), the third harmonic (wavelength 355 nm), and the fourth harmonic (wavelength 266 nm). A wavelength absorbed by the film to be removed is selected from these wavelengths, and the substrate 100 is irradiated with laser light of any wavelength.

Further, the pulse width of the laser beam 213 emitted from the laser oscillator 211 is set to about 10 nsec. Further, the laser light of the laser oscillator 211 has a maximum of 10
It is possible to oscillate at kHz. The laser oscillator control unit 212 controls the oscillation control of the laser beam 213 of the laser oscillator 211.

The laser beam 213 emitted from the laser oscillator 211 passes through the optical system 214 and the optical shape forming section 215.
Incident on.

The optical shape forming section 215, as shown in FIG. 4, has a visual field setting system 250 having an opening for setting a visual field.
And a slit / dot setting system 260 in which an opening for further subdividing the field of view is formed. The substrate 100 is irradiated with the laser light that has passed through a portion where the opening formed in the visual field setting system 250 and the opening formed in the slit / dot setting system 260 overlap.

The field-of-view setting system 250 shapes the shape of laser light in a direction orthogonal to the scanning direction described later. Also,
The slit / dot setting system 260 shapes the shape of laser light in the scanning direction.

The structure of the visual field setting system 250 will be described with reference to FIG. FIG. 5 is a diagram showing the configuration of the field stop setting system according to the first embodiment. As shown in FIG. 5, a plurality of, for example, four field diaphragms 252a are mounted on the field diaphragm mounting plate 251.
~ 252d is mounted. By rotating the field diaphragm mounting plate 251 with the field diaphragm selection mechanism 254,
Any one of the field diaphragms 252a to 252d is selected.

The field stop 2 is mounted on the field stop mounting plate 251.
Field diaphragm rotation mechanism 25 for rotating 52a to 252d
5 are provided. The diaphragm rotation mechanism 255 is shown in FIG.
As shown in (a) and (b), the field stop 252 is rotated by an angle θ2 corresponding to the inclination (θ1) of the alignment mark of the substrate 100 measured by the observation unit 220.

As another form of the visual field setting system, FIG.
Alternatively, a diaphragm blade type field diaphragm system shown in FIG. This field diaphragm system is shielded by four diaphragm blades 256a to 256d, and the laser light is transmitted through a region surrounded by the diaphragm blades 256a to 256d to form the laser light. With the diaphragm type, it is possible to change the shape of the laser light forming system.

The structure of the slit / dot setting system 260 will be described with reference to FIGS. 8 and 9 are diagrams showing the configuration of the slit / dot aperture setting system according to the first embodiment of the present invention.

As shown in FIG. 8, a second rotary plate 262 is installed on the first rotary plate 261. A slit / dot diaphragm mounting plate 263 (FIG. 9) on which a diaphragm is mounted is provided on the second rotary plate 262. First and second rotating mechanisms 264 and 265 for rotating the first rotating plate 261 and the second rotating plate 262, respectively, are provided.

As shown in FIG. 9, the slit / dot diaphragm mounting plate 263 has, for example, four diaphragms 266a to 266d.
Is installed. S / D by the translational movement mechanism 267
By moving the diaphragm mounting plate 263 in translation, any one of the S / D diaphragms 266a to 266d is selected.

An example of four S / D diaphragms 266a to 266d is shown in FIG. The diaphragm 266a shown in FIG.
The laser light shaped by the visual field setting system 250 is transmitted almost as it is. The diaphragm 266b shown in FIG. 10B is formed in a slit shape. A diaphragm 2 shown in FIGS. 10 (c) and 10 (d)
66c and d shape laser light in a dot shape.

The amount of gas generated by laser irradiation is remarkable,
A slit shape is preferably used when the generated gas is irradiated with laser light and is scattered to affect processing, and when the tendency is remarkable, a split slit shape is preferably used. If the above influence is small, it is better to use a checkerboard lattice. It is also possible to observe the processing state of the processed film in advance and mount only one of these diaphragms.

The slit shape is a shape in which the longitudinal direction of the irradiation shape is substantially equal to one side of the processing area and the width in the direction orthogonal to the longitudinal direction is shorter than the other side of the processing area. Refers to. Further, the dot-shaped irradiation shape means that the two widths of the irradiation shape in the orthogonal direction are both shorter than the width of the processing region in the orthogonal direction.

In this S / D diaphragm setting system, the diaphragm mounting plate 263 can be translated by the translation mechanism 267 while the substrate is stationary to scan the processing area on the substrate. Since the movement at this time is only about several μm, it may be vibrated in the translational direction by using a piezo element. In addition,
The slit may be fixed by the same method as used in the conventional exposure apparatus, and the substrate and the laser light may be relatively scanned.

The first and second rotating mechanisms 264 and 265 rotate the diaphragm mounting plate 263 by an angle θ3 corresponding to the inclination (θ1) of the alignment mark of the substrate 100 measured by the observation system 220 and set the field of view. The irradiation position of the laser light formed by the system 250 is adjusted.

The aperture of the field stop used here has a shape substantially similar to the processing area. One side of the irradiation shape of the opening is 10 μm to 500 μm (10 μm × 10 μm
(500 μm × 500 μm) in accordance with the processing area. As for the slit / dot diaphragm, a slit or a dot width W having a width of W = 2 to 10 μm is used, and a plurality of slits / dot diaphragms are prepared within the range of a pitch P = 2W to 100W. Is obtained in advance and selected for use.

As shown in FIG. 11, the visual field setting system 2
A diaphragm plate on which slits or dots are formed may be selected using a mechanism similar to that of 50. Another configuration of the S / D setting system 260 will be described with reference to FIG. Figure 11
FIG. 3 is a diagram showing a configuration of an S / D setting system according to the first embodiment. As shown in FIG. 11, the S / D diaphragm mounting plate 26
A plurality of S / D diaphragms 2 shown in FIG.
66a to 266d are mounted. The S / D diaphragm selection mechanism 269 rotates the S / D diaphragm mounting plate 267 to select one of the S / D diaphragms 266a to 266d.

An S / D diaphragm rotating mechanism 268 for rotating the S / D diaphragms 266a to 266d is provided on the S / D diaphragm mounting plate 267. The diaphragm rotation mechanism 268 rotates the S / D diaphragm 2 by an angle θ3 corresponding to the inclination (θ1) of the alignment mark of the substrate 100 measured by the observation system 220.
Rotate 52.

When the S / D setting system shown in FIG. 11 is used,
The driving mechanism 242 translates the substrate 100 to change the irradiation position on the substrate. It is also possible to change the irradiation position on the substrate by installing a reflector such as a mirror between the substrate and the visual field setting system and changing the angle of the reflector.

The optical image formed by the optical shape forming section 215 in this way passes through the observation system 220 and the condenser lens 216 and is applied to the processed surface 100a of the substrate 100. The observation system 220 includes a half mirror 221 that extracts the laser light 213 from the optical axis, and an observation camera 22 that observes the laser light extracted by the half mirror 221.
2 and. The observation system 220 recognizes the processing position on the substrate 100, the irradiation position, and the processing status as image information via the CCD camera 222.

Using this observation system 220, alignment adjustment of the laser beam irradiation position can be performed. In addition, in the process of laser light irradiation, the processing state is sequentially recognized as an image,
Further, the processing area is extracted from the image, the progress of processing is judged, and the irradiation amount is adjusted. For example, the irradiation amount is reduced in the portion where the processing is fast, and the irradiation amount is increased in the portion where the processing is slow. Also, it is recognized whether or not the processing has been completed. The end of the processing is recognized by taking the difference between the images, and the processing can be controlled such that the processing is ended when the difference between the images in the processing area becomes almost zero.

The observation system 220 also has a particle detection mechanism for observing the processed region of the substrate 100 and counting particles. Particle detection can be obtained by calculating the number of pixels in a specific gradation range of the reflected light received by the CCD pixels. Furthermore, from the extracted pixel position information, 1) if adjacent vertically and horizontally, it is regarded as one lump and the number of defects is determined. 2) When adjacent vertically and horizontally and diagonally, it is regarded as one lump and defects are determined. Determine the number.

Defects can also be extracted by the algorithm.

The particle detection mechanism compares the calculated number of defects with the minimum number of defects registered in advance, and if the number of detected defects exceeds the minimum number of defects, it continues processing in a desired area. Issue a command. When the number of defects is less than or equal to the number of defects, it can be controlled to issue a command to move to the next processing area.

Images are stored before and after laser irradiation,
The difference is obtained, and when the difference is almost 0, the machining in that portion is stopped, and when it is not, the machining is continuously controlled.

Next, the laser processing section 230 will be described. The holder 231 is formed in a shape like a tray in which a dam for storing the liquid 239 is arranged in the peripheral portion. Pure water, for example, is used as the liquid 239.

At the center of the holder 231, the substrate 1
A stage 232 capable of mounting and holding 00 is installed. The substrate 100 is rotated by a rotation mechanism 233 connected to the stage 232. The rotation angle of the substrate 100 is controlled by a sensor 235 and a rotation control mechanism 234. In the present embodiment, the rotation mechanism 233 is connected to the drive mechanism 242, and the holder 231 is moved in the horizontal direction and the vertical direction to change the irradiation position of the laser light. The rotating mechanism 233 and the driving mechanism 242 can downsize the laser processing system, such as downsizing the condenser lens 216.

The holder 231 further covers the liquid that immerses the processed surface of the substrate 100, and the window 236 transparent to the laser light.
Is equipped with. The laser beam 213 oscillated from the laser oscillator 211 passes through the window 236 and the liquid 239 and is irradiated onto the processed surface 100a of the substrate 100.

Further, a liquid flow device 237 for flowing the liquid 239 stored in the holder 231 is provided.
The liquid flow device 237, which is basically a pump, is connected to the pipe 2
38a and 238b are connected to the holder 231.
The liquid 239 is adapted to be circulated. Further, the flow direction can be controlled with respect to the relative movement direction of the substrate 100 and the laser light.

Further, the present device is provided with a piezoelectric element 240 arranged on the back surface of the holder 231, and a piezoelectric element drive control circuit 241 for controlling the driving of the piezoelectric element 240. The piezoelectric element 240 can apply ultrasonic vibrations to the liquid 239 in at least the laser light irradiation region of the processed surface 100a of the substrate 100 to remove bubbles generated by the laser light irradiation.

Further, in this apparatus, a laser light source is used as a processing light source, but the present invention is not limited to this, and it is a wavelength absorbed by the processing film, and the desired processing, that is, the film thickness is reduced, or the film is formed. Any material that has the ability to be removed may be used. For example, when an organic film or an inorganic film has absorption in the visible region or the ultraviolet region, it is confirmed that the film thickness is reduced by condensing and using a tungsten lamp or a Xe flash lamp.

This device relates to underwater processing,
It can also be applied to atmospheric treatment, pressure treatment, and pressure reduction treatment of the substrate, and the holder structure can be used according to each treatment.

Next, the removal of the resist film 106 and the antireflection film 105 using this optical processing apparatus 200 will be described.

Next, the optical processing apparatus 20 whose substrate is shown in FIG.
Transport to 0. The alignment of the laser optical axis and the substrate is adjusted by detecting the notch of the substrate and the wafer edge. Further, the tilts of the field stop and the S / D stop are adjusted according to the tilt of the alignment mark 102.

Next, the shape of the light to be irradiated is defined as a predetermined processing shape which must be removed by 100 μm in length × 200 μ in width.
m, and the laser beam is shaped into a desired shape using the optical shape shaping unit. Further, in the present embodiment, as the S / D diaphragm, one which forms the shape of laser light into one slit shape of 100 μm in length × 5 μm in width is used.

Next, as shown in FIG. 1C, the liquid flow device 237 is operated to cause the liquid 239 to flow between the window 236 and the substrate 100, and the laser light is moved relative to the substrate. To remove the processed film.

As a method for relatively scanning the substrate and the light, the drive mechanism 242 may be used with the optical axis of the laser light fixed, or, for example, S /
Scanning may be performed by translating the D diaphragm mounting plate 263 and the like.

The wavelength of the laser light is a wavelength absorbed by the antireflection film used in the lithography process. The energy density per irradiated pulse is appropriately adjusted so that good processing can be performed without damaging the area outside the processing area. The energy density is usually 0.1 J / cm ²
~ 0.5 J / cm ² .

Since the liquid 239 is on the irradiation portion during the laser light irradiation, the heat generated by the laser light irradiation can be taken away from the processed surface 100a of the substrate 100. Further, it is possible to reduce the momentum of the evaporation material generated by the laser light irradiation.

The window 236 prevents the liquid 239 stored in the holder 231 from being sprinkled during laser processing. Further, the window prevents dust and the like from adhering to the surface of the substrate 101 from above.

That is, the fluid flow device 237 is installed in the holder 2
The liquid 239 stored in 31 has a flow so that bubbles generated at the irradiation position of the laser light can be continuously removed by the irradiation of the laser light so that the laser light is not irregularly disturbed. First, the liquid is circulated in a fixed direction at a fixed flow rate. The liquid flow device 237 may be driven at least when the laser processing is actually performed.

While irradiating the substrate 100 with laser light, S /
The D diaphragm mounting plate 263 is moved in translation. As the S / D diaphragm mounting plate 263 moves in translation, as shown in FIG.
The irradiation region 272 of the laser light moves to the processed region 271 of the substrate, and the antireflection film 105 and the resist film 106 in the predetermined processed region are removed.

It has been confirmed by experiments that particles generated when processed by light irradiation flow into a water stream and, if they adhere, adhere to the downstream side. Therefore, when the irradiation area is scanned in the same direction as the water flow, the particles can be processed while removing the generated particles, so that the generation of particles is further reduced.

Next, after draining the liquid 239 stored in the holder 231, the processed substrate 100 is rotated at a high speed to roughly remove the water on the surface. After that, the processed substrate 100 was further conveyed to the second solvent removing device and heated. The heating temperature of the substrate 100 was 200 ° C. The reason why the substrate 100 is heated here is to remove the adsorbed water on the surface of the resist film 306 and to make the exposure environment the same over the entire surface of the resist film. If this treatment is not carried out, the acid generated by the exposure moves to a portion in contact with water due to the water slightly remaining in the film, resulting in a pattern defect.

Then, the substrate 100 is conveyed to the exposure apparatus,
As shown in FIG. 2D, the alignment mark 10 on the substrate 100 is detected by the alignment detector using the alignment light (first energy ray) 107 having the same wavelength as the exposure wavelength.
2 is detected. At this time, since the antireflection film 105 on the alignment mark 102 is removed, good detection intensity can be obtained. Note that the alignment mark 102 could not be detected at all when the antireflection film 105 on the alignment mark 102 was not removed as in the conventional case.

Based on the position information from the aligner, as shown in FIG. 2E, the exposure part 10 of the resist film 106 is exposed.
The exposure light (second energy ray) is irradiated to 6a to form a latent image of the circuit pattern on the resist film 106. After the latent image forming step, the substrate 100 is conveyed to the PEB step heating device, and the heat treatment (PEB) of the processed substrate is performed. The heat treatment is carried out in order to carry out a catalytic reaction of acid of the used resist (chemically amplified resist).

After this heat treatment, as shown in FIG. 2F, the substrate 100 is transported to develop the resist film 106, and a resist pattern 109 is formed. The alignment accuracy of the formed resist pattern 109 was ± 5 nm or less.

Next, as shown in FIG. 2G, the antireflection film 105 and the interlayer insulating film 106 are etched by RIE using the resist pattern 109 as a mask.

FIG. 13 shows the surface condition of the substrate when the antireflection film 105 and the resist film 106 are removed by the method described above.
Shown in. Further, FIG. 14 shows a substrate surface state in the case of removing the film by collectively irradiating the processed region in the reference example. Figure 13
It is a figure which shows the surface state of the board | substrate after removing a film | membrane by the method concerning the 1st Embodiment of this invention. FIG. 14 is a diagram showing the surface condition of the substrate after removing the film by the conventional method.

As shown in FIG. 14, when the film is removed by collective irradiation, it can be seen that a large number of particles 284 that cannot be removed exist around and inside the processing region. Further, peeling 283 of the resist film formed on the upper layer of the antireflection film occurs around the processed region.

When the film is removed by the method of this embodiment,
As compared with the conventional method shown in FIG. 14, it can be seen that the peeling 281 of the upper layer resist is suppressed, and the number of particles 282 adhering to the periphery of the processed region and the inside of the processed region is drastically reduced. In FIG. 14, the reference numeral 283 is the resist peeling and the reference numeral 284 is the particles.

The reason why the number of particles decreases will be described below. If the one-time irradiation area is wide, the bubbles generated by light irradiation will be larger than the processing area, so that many particles adsorbed on the surface of the bubbles will adhere inside and outside the processing area.

On the other hand, the irradiation shape is narrowed into a slit shape,
When scanning is performed relative to the substrate, the bubbles generated at one time become small, and it becomes difficult for the bubbles to contact the substrate. Therefore, the number of particles adhering to the inside and outside of the processing area is suppressed.

As a result of measuring the bubbles generated, when a predetermined processed film region was collectively irradiated with light and processed, the radius of the generated bubbles was R = 120 μm. On the other hand, when a slit-shaped laser beam having a width of 5 μm is irradiated, the bubble radius R = 2
It was 5 μm. The size of the bubbles was smaller when the slit-shaped laser light was irradiated than when the laser light was irradiated all at once. From this result, it was found that the adhesion of particles can be reduced by controlling the bubble diameter generated by one ablation to be small.

However, even the method described above was not sufficient to remove the particles in the processed region. The adhesion of particles inside the alignment mark causes a problem such as an increase in reading error when reading the alignment mark or a reading error. Further, if particles adhere outside the alignment mark, especially in the device area, defective pattern formation or the like may be induced and the yield may decrease.

A method capable of further suppressing the number of particles adhering to the inside and outside of the processing area will be described below. First, a processing method for preventing the adhesion of particles in the processing area will be described first. The apparatus used for removing the film is the same as that described in the first embodiment.

FIG. 15 is a sectional view showing a manufacturing process of the semiconductor device according to the first embodiment of the present invention.

As shown in FIG. 15A, the resist film and the antireflection film on a predetermined processing region (vertical 100 μm × horizontal 200 μm) are slit-shaped (vertical 100 μm × horizontal 3 μm) with a width narrower than that of the alignment mark. ) Laser light 110
Are molded and irradiated onto the processed area of the substrate. Ablation is performed while scanning the laser beam (first processing light) 110 from one end to the other end of the processing region. At this time, the particles 111 slightly adhere to the substrate surface.

When the oscillation frequency is f, the scanning speed is v, and the slit having the width t is scanned, the number of overlapping irradiations n performed in one scanning is represented by n = tf / v (1). That is, the oscillation frequency f = 250 Hz,
When the scanning speed v = 30 μm / sec, the number of overlapping irradiations n = 25 when the slit width t = 3 μm.

When the number of repeated irradiations n increases, the base Si
Irradiation damage is likely to occur in various areas formed under the antireflection film such as a mark, a mark, or an interlayer insulating film. On the other hand, since the bubbles generated by the irradiation of one pulse are small, the generation of particles is reduced. That is, the number of repeated irradiations is appropriately selected depending on the thickness and material of the antireflection film or the film type and film thickness of the lower layer of the antireflection film. Usually n
Is selected between 1 and 50.

In the formula (1), when the number of overlapping irradiations n is smaller than 1, the overlapping of the irradiation regions disappears,
There is a film that cannot be completely removed between the irradiation regions.
The residual film between the irradiation regions peels off when the adjacent irradiation region is irradiated, and becomes a fatal particle. That is, n
Must be at least 1.

Then, as shown in FIG. 14B, the laser beam (second processing beam) 112 is scanned from the other end to the one end. Further, similarly, by repeating the reciprocal scanning of the laser beam 112, the particles remaining in the alignment mark can be removed. Here, in order to reduce the influence of heat generated by ablation on the resist film, the liquid 239 stored in the holder 231 is stored.
Went inside. Further, the liquid 239 was circulated at a constant flow rate in a constant direction so that the laser beam was not disturbed by the liquid flow device 237 so that the bubbles generated in the laser beam irradiation region could be continuously removed by the laser beam irradiation.

In the processing process, the observation system 220 including a CCD camera is used to count the particles inside and outside the processing area. Then, images were stored before and after laser irradiation, the difference in the number of particles was taken, and when the difference was almost 0, the processing was stopped at that portion, and when it was not, the processing was controlled to continue. .

It was confirmed that the alignment accuracy between the base pattern and the exposure pattern was improved by the above steps.

In the present embodiment, the processed film on the alignment mark is completely removed, but the present invention is not limited to this.
For example, if the alignment mark can be detected by the optical system used for the alignment measurement, the processing may be ended in a state where the processing film in the processing region remains slightly. For example, even if the thickness of the processed film was reduced to half, the alignment was able to be performed although the contrast was poor.

(Second Embodiment) In the first embodiment,
The method of removing particles adhering to the processing area by making the irradiation shape of the laser light a slit shape and reciprocally scanning the laser light relative to the processing area has been described.

However, in this method, during processing by light irradiation, the irradiation shape on the substrate is always fixed to a slit shape having a constant area, and the processing area is reciprocally scanned.
When the alignment accuracy between the irradiation position and the processing area is not sufficient, there is a problem that a particle is newly generated from the boundary of the processing area due to the deviation of the processing position each time the reciprocal scanning is repeated. Further, the particles are adsorbed on the surface of the bubbles generated by the light irradiation. The bubbles grow large, come into contact with the substrate surface, and adhere as particles.

Therefore, in the present embodiment, by considering the alignment accuracy in the vicinity of the boundary of the predetermined processing region, the irradiation shape of the laser beam on the substrate is made small, so that particles generated near the edge of the processing region are generated. By suppressing,
A method for preventing particles from adhering to the processed area will be described.

16 and 17 are views showing a manufacturing process of a semiconductor device according to the second embodiment of the present invention. 16 and 17, the same parts as those in FIG. 1 are designated by the same reference numerals and the description thereof will be omitted. 16 (a) and 17 (a) are cross-sectional views, and FIGS. 16 (b) and 17 (b) are plan views of the processing region.

In the first scanning, as shown in FIG.
In the central portion of the processing region 121, the laser light 120 is applied to the substrate 10
The antireflection film 105 and the resist film 106 in the processed region 121 are removed by scanning the processed region 121 from one end to the other end by scanning relative to 0. Note that reference numeral 122 indicates the irradiation shape of the laser light 120.

As described above, in the first embodiment, in this state, when the reciprocal scanning is performed, if the alignment accuracy between the irradiation area and the predetermined processing area is not sufficient, the light is applied to the boundary of the first processed area. Are irradiated and the boundary is processed, so that particles adhere to the processed region 121.

Therefore, in the second scanning, when the laser beam 124 approaches the boundary of the processing region 121 as shown in FIG. 17, the alignment accuracy is taken into consideration and the irradiation shape is set by the visual field setting system 250. 125 is made smaller than the irradiation shape 122 in the central portion of the processing region 121.

As a result, it is possible to prevent the generation of new particles near the boundary of the processing area 121 from outside the processing area 121 due to the influence of the alignment error.
Then, by reducing the light irradiation area, the bubble 125 generated at the boundary of the processing region becomes smaller than the bubble 123 generated at the center of the processing region. In addition, the particles 111
The amount of is reduced. Therefore, the adhesion of the particles 111 adsorbed on the surface of the bubble 125 to the surface of the substrate is also prevented.

In the processing process, the observation system 220 including a CCD camera is used to count the particles inside and outside the processing area. Then, the image is stored before and after the laser irradiation, the difference is taken, and when the difference is almost 0, the processing in that portion is stopped, and when it is not the case, the processing is continuously performed to perform the desired control. Has finished processing.

By this method, it is possible to further prevent particles from adhering to the processing area as compared with the method described in the first embodiment.

In the present embodiment, the processed film on the alignment mark is completely removed, but the present invention is not limited to this.
For example, if the alignment mark can be detected by the optical system used for the alignment measurement, the processing may be ended in a state where the processing film in the processing region remains slightly. For example, even if the thickness of the processed film was reduced to half, the alignment was able to be performed although the contrast was poor.

(Third Embodiment) In the second embodiment, the laser beam and the substrate are relatively scanned and the area of the irradiation region is reduced near the boundary of a predetermined processing region in consideration of alignment accuracy. The method of suppressing the generation of new particles from areas other than the predetermined processing area, reducing the diameter of the generated bubbles, and preventing the particles adsorbed on the surface of the bubbles from adhering to the substrate surface has been described.

In the present embodiment, for the same purpose as in the second embodiment, laser light is relatively scanned with respect to the substrate and irradiation is performed from one end to the other end of a predetermined processing area. When the position approaches the boundary of the desired processing area, the relative scanning speed is reduced to improve the alignment accuracy near the boundary of the predetermined processing area and reduce the bubble diameter generated per unit time. Therefore, a method of preventing particles from adhering to the processed region will be described.

18 and 19 are views showing manufacturing steps of a semiconductor device according to the third embodiment of the present invention. 18 and 19, the same parts as those in FIG. 1 are designated by the same reference numerals and the description thereof will be omitted. 18A and 19A are cross-sectional views, and FIGS. 18B and 19B are plan views of the processing region.

After the second scanning, when the laser beam approaches the boundary of the predetermined processing region, the scanning speed of the laser beam 133 is higher than that when the laser beam 130 is scanning the central portion of the processing region 131 (FIG. 18). Slow down (Fig. 19). The scanning speed of the laser light is adjusted by adjusting the translation speed of the diaphragm mounting plate. Reference numerals 131 and 134 denote laser light 13 on the substrate.
The irradiation shapes of 0 and 133 are shown.

Since the scanning speed of the laser beam becomes slow at the boundary of the processing region 131, the light irradiation area per unit time decreases near the boundary of the processing region 131. Therefore, the diameter of the bubble 135 generated per unit time is also reduced, the particles 111 adsorbed on the surface of the bubble 135 are less likely to contact the substrate surface, and the adhesion of particles inside and outside the processing region 131 is prevented.

In the processing process, the observation system 220 composed of a CCD camera is used to count the particles inside and outside the processing area. Then, the image is stored before and after the laser irradiation, the difference is taken, and when the difference is almost 0, the processing in that portion is stopped, and when it is not the case, the processing is continued to perform the desired processing. Finish the processing of. The effects of this embodiment could be confirmed even when the laser processing was performed in the atmosphere or high-pressure air.

Although the processed film on the alignment mark is completely removed in this embodiment, the present invention is not limited to this.
For example, if the alignment mark can be detected by the optical system used for the alignment measurement, the processing may be ended in a state where the processing film in the processing region remains slightly. For example, even if the thickness of the processed film was reduced to half, the alignment was able to be performed although the contrast was poor.

(Fourth Embodiment) In the first embodiment, an antireflection film or a resist film is formed by scanning a predetermined processing area with light that is constantly narrowed and has a constant laser beam irradiation shape. Described how to remove. However, consider a case where there is an error in the alignment accuracy between the laser beam and the predetermined processing region in the scanning direction when the laser beam reciprocally scans. In this case, if reciprocal scanning is repeated with a laser beam of the same irradiation shape, alignment errors will affect it,
Light is emitted to the outside of the processing area. As a result, new particles are generated each time the processing area is reciprocally scanned, and it becomes difficult to completely remove the particles.

Therefore, in the present embodiment, the long side of the slit-shaped irradiation shape is gradually reduced in consideration of the alignment accuracy of the laser beam with respect to the processing area.

This will be described in more detail with reference to FIGS. 20 and 21. 20 and 21 are views showing manufacturing steps of the semiconductor device according to the fourth embodiment of the present invention. Note that FIG.
0 and FIG. 21, the same parts as those in FIG. 1 are designated by the same reference numerals and the description thereof will be omitted. 20 (a) and 21.
20A is a cross-sectional view, and FIGS. 20B and 21B are plan views of the processed region.

FIG. 20 shows the first scanning state. Then, FIG. 21 shows the second scanning state. As shown in FIGS. 20 and 21, the second laser light 1
The length of the irradiation shape 144 in the scanning of 43 in the longitudinal direction is defined as the irradiation shape 14 of the laser beam 140 in the first scanning.
Make it shorter than 2.

By doing so, even if the reciprocal scanning is repeated, the light is not irradiated to the area other than the processing area. As a result, it is possible to suppress particles generated outside the processing region and prevent the particles from adhering to the substrate surface.

In the processing process, the observation system 220 composed of a CCD camera is used to count the particles inside and outside the processing area. Then, the image is stored before and after the laser irradiation, the difference is taken, and when the difference is almost 0, the processing in that portion is stopped, and when it is not the case, the processing is continued to perform the desired processing. Has finished processing.

The effects of this embodiment could be confirmed even when the laser processing was performed in the atmosphere or high-pressure air.

Although the processed film on the alignment mark is completely removed in this embodiment, the present invention is not limited to this.
For example, if the alignment mark can be detected by the optical system used for the alignment measurement, the processing may be ended in a state where the processing film in the processing region remains slightly. For example, even if the thickness of the processed film was reduced to half, the alignment was able to be performed although the contrast was poor.

(Fifth Embodiment) In the first embodiment,
The antireflection film or the resist film is removed by scanning light that is narrowed down in the processed area. However, in this method, when there is an alignment error in the scanning direction between the irradiation position of the laser light and the predetermined processing area, if the laser light constantly scans the entire predetermined processing area in a reciprocating manner, it will be changed every time the reciprocating scanning is repeated. Light is irradiated to the boundary of the region processed by the previous light irradiation, and a large amount of particles are newly generated from the part other than the processed region.

Therefore, in this embodiment, in consideration of the alignment accuracy of the irradiation position of the laser beam with respect to the scanning direction of the predetermined processing region, the range in which the laser beam scans the processing region is gradually increased every time the number of scans increases. Reduce.

This will be described in more detail with reference to FIGS. 22 and 23. 22 and 23 are views showing manufacturing steps of a semiconductor device according to the fifth embodiment of the present invention. Note that FIG.
2, 23, the same parts as those in FIG. 1 are designated by the same reference numerals and the description thereof will be omitted.

FIG. 22 shows the first scanning state. And FIG. 23 has shown the scanning state of the 2nd time. As shown in FIGS. 22 and 23, the second laser light 1
The scan range of the 51st scan is made narrower than the scan range of the laser light 150 in the first scan.

By performing the reciprocal scanning in this way, even if the reciprocal scanning is repeated, the light is not irradiated to the area other than the processing area, so that the particles generated every time the reciprocal scanning is repeated at the boundary of the processing area are suppressed. To be done. as a result,
It is possible to prevent particles from adhering to the processing area.

In the processing process, the observation system 220 composed of a CCD camera is used to count the particles inside and outside the processing area. Then, the image is stored before and after the laser irradiation, the difference is taken, and when the difference is almost 0, the processing in that portion is stopped, and when it is not the case, the processing is continued to perform the desired processing. Has finished processing.

As described above, in the first to fifth embodiments so far, the irradiation shape of the laser light is a long slit shape, and the antireflection film is formed by relatively scanning the laser light and the substrate. Or the resist film was removed. However, the optical shape is not limited to the long slit shape, and the one in which the processing area is divided into dots may be irradiated and the predetermined processing area may be scanned.

The effect of this embodiment could be confirmed even when the laser processing was performed in the atmosphere or high-pressure air.

In this embodiment, the processed film on the alignment mark is completely removed, but the invention is not limited to this.
For example, if the alignment mark can be detected by the optical system used for the alignment measurement, the processing may be ended in a state where the processing film in the processing region remains slightly. For example, even if the thickness of the processed film was reduced to half, the alignment was able to be performed although the contrast was poor.

(Sixth Embodiment) In the first to fifth embodiments, desired processing is performed by reciprocally scanning a laser beam having an irradiation shape narrowed down smaller than the processing area.
The method for removing the particles adhering to the processed region has been described.

However, this method has a problem that throughput is reduced because time is spent for reciprocal scanning, and in addition, because of irradiation with long slit-shaped light, thermal distortion is caused by an alignment mark or the like formed under the antireflection film. However, there is a problem that the influence of is increased and damage is likely to occur.

In this embodiment, a method for suppressing damage to the lower layer such as alignment marks while reducing the processing time will be described.

FIG. 24 is a cross-sectional view showing the manufacturing process of the semiconductor device according to the sixth embodiment. 24, the same parts as those in FIG. 1 are designated by the same reference numerals, and the description thereof will be omitted.

As shown in FIG. 24, first, similarly, a laser beam 160 whose irradiation shape on the substrate is formed into a slit shape by a slit diaphragm system is made to relatively scan with respect to the substrate to form a processing region. Then, the antireflection film 105 and the resist film 106 are removed. In this state, the particles 111 are present in the processing area.

Next, in the second and subsequent irradiations, as shown in FIG.
As shown in (b), a particle is removed by irradiating with a laser beam 161 which is formed only by the visual field setting system and whose irradiation shape on the substrate is approximately the same size as the processing area. At this time,
Considering the alignment accuracy, the actual irradiation shape may be smaller than the processing area so that the light is not irradiated to the outside of the processing area edge.

With this method as well, as in the second to fifth embodiments, it is possible to prevent the adhesion of particles in the processing region.

Here, first, the light is narrowed down and the long slit-shaped light is relatively scanned with the substrate to remove the antireflection film or the resist film. However, the shape of the light to be applied is not limited to a thin rectangle, and the processing area may be divided into dots, and the processing area may be scanned.

As described above, at least the first processing is performed while scanning the long slit-shaped light,
By suppressing the generation of particles and then irradiating the processing area with light, the particles in the processing area can also be removed. Further, by using the method described below, it is possible to suppress the adhesion of particles even when removing a film in which particles are more likely to occur.

In the processing process, the observation system 220 composed of a CCD camera is used to count the particles inside and outside the processing area. Then, the image is stored before and after the laser irradiation, the difference is taken, and when the difference is almost 0, the processing in that portion is stopped, and when it is not the case, the processing is continued to perform the desired processing. Has finished processing.

The effect of this embodiment could be confirmed even when the laser processing was performed in the atmosphere or high-pressure air.

In the present embodiment, the processed film on the alignment mark is completely removed, but the present invention is not limited to this.
For example, if the alignment mark can be detected by the optical system used for the alignment measurement, the processing may be ended in a state where the processing film in the processing region remains slightly. For example, even if the thickness of the processed film was reduced to half, the alignment was able to be performed although the contrast was poor.

(Seventh Embodiment) Next, a method of removing particles scattered outside the processing region will be described. Figure 25
FIG. 9A is a cross-sectional view showing a manufacturing process of a semiconductor device according to a seventh embodiment of the present invention. Note that in FIG.
The same parts as those in FIG.

In this embodiment, light irradiation is performed with the substrate immersed in running water.

As shown in FIG. 25A, the laser beam 170 shaped into a slit is scanned from the first starting point in the processing region to the first boundary. At this time, the direction of the liquid flow by the liquid flow device is set to be substantially antiparallel to the scanning direction. That is, the irradiation position of the laser beam 170 moves toward the upstream side of the liquid flow. Since the particles are made to flow by the water flow, the particles 111 adhere to the inside of the processing region and to the downstream side of the water flow.

Next, as shown in FIG. 25B, the laser beam 170 is scanned from the second starting point between the first starting point and the first boundary to the second boundary. At this time, the flow of the liquid 239 by the liquid flow device 237 is reversed from that at the time of the first scanning.

In this way, the processing region is processed by scanning the substrate with the laser light. Even in this state, due to the flow of the liquid 239 by the liquid flow device 237, the particles do not exist outside the processing region, but all remain inside the processing region.

Then, as shown in FIG. 25 (b), the laser beam 171 is irradiated while repeatedly scanning the inside of the processing region to remove the particles remaining in the processing region.

In addition, in order to prevent the generation of new particles from the boundary of the predetermined processing area by repeating the reciprocating scanning, the visual field setting system is set near the boundary of the desired processing area as described in the above embodiment. By making it variable, the light irradiation shape can be made smaller and the scanning speed can be made smaller.
The optimal method without particle adhesion is selected as appropriate.

Further, instead of the slit-shaped light irradiation, as shown in the sixth embodiment, it is possible to switch to the irradiation shape of the processing region and perform the collective irradiation.

In the processing process, the observation system 220 composed of a CCD camera is used to count the particles inside and outside the processing area. Then, the image is stored before and after the laser irradiation, the difference is taken, and when the difference is almost 0, the processing in that portion is stopped, and when it is not the case, the processing is continued to perform the desired processing. Has finished processing.

By using the above method, it is possible to obtain a processed shape in which particles are not attached inside and outside a predetermined processing area.

In the previous embodiment, when scanning the slit-shaped light from the end of the processing area, it is better to always scan in the same direction as the water flow. On the other hand, as in the present embodiment, when the laser light is scanned from near the center of the processing area,
Scanning with laser light in the direction opposite to the flow of the liquid 239 by the liquid flow device 237 always makes it possible to further suppress the adhesion of particles.

In the present embodiment, the processed film on the alignment mark is completely removed, but the present invention is not limited to this.
For example, if the alignment mark can be detected by the optical system used for the alignment measurement, the processing may be ended in a state where the processing film in the processing region remains slightly. For example, even if the thickness of the processed film was reduced to half, the alignment was able to be performed although the contrast was poor.

(Eighth Embodiment) In the methods described in the second to seventh embodiments, although the amount of particles generated can be reduced, the area that can be processed at one time is small,
Since it takes a scanning time to process the entire processing area, there arises a problem that the throughput is significantly reduced.

Therefore, in the present embodiment, in order to significantly reduce the processing time, the laser light is shaped by using a mask in which a plurality of slit-shaped or dot-shaped openings of a slit / dot diaphragm system are arranged. An example of the mask is shown in FIG. FIG. 26 is an S / D according to the eighth embodiment of the present invention.
FIG. 6 is a plan view showing a mask mounted on a diaphragm system. FIG. 26
The masks 180a and 180b shown in FIGS.
A plurality of slit-shaped openings 181a and 181b are formed. Further, the mask 180c shown in FIG.
A plurality of dot-shaped openings 181c are formed.

The pitch of the openings arranged in the mask is
If the length is less than twice the length of the openings in the pitch direction, the lights passing through the adjacent openings are diffracted. As a result, the substrate is irradiated with the interference light, and the processed shape becomes abnormal.

As a result, when the distance to the adjacent irradiation area along the long side of the predetermined processing area becomes short, the diffracted lights interfere with each other in a complicated manner and the irradiation shape cannot be kept rectangular.

Therefore, it is desirable that the pitch of the plurality of openings arranged in the mask is at least twice the length (W) of the openings in the pitch direction. Light having a shape similar to the opening formed in the mask is incident on the substrate. Therefore, it can be said that it is preferable that the pitch of the processing light irradiated adjacent to the substrate is twice or more the length of the irradiation shape of the processing light on the substrate in the scanning direction.

The processing time can be shortened by setting the pitch of the processing light irradiated on the substrate adjacent to the scanning direction to be 1/2 or less of the length of the processing region in the scanning direction. .

Even if the pitch is 2 W or more, light interferes with each other, and if the irradiation shape cannot be kept rectangular, the pitch may be set large.

Further, the pitch of the processing light irradiated on the substrate adjacent to the scanning direction is adjacent to the scanning direction formed on the mask so as to be larger than the diameter of the bubble generated by the irradiation of the processing light. It is preferable to adjust the pitch of the openings. When the pitch of the processing light irradiated on the substrate adjacent to the scanning direction is equal to or smaller than the diameter of the bubble generated by the irradiation of the processing light, the bubbles generated adjacently come into contact with each other. As a result, the laser light is further irregularly disturbed, which makes it difficult to perform accurate processing.

FIG. 27 is a sectional view showing a manufacturing process of a semiconductor device according to the eighth embodiment of the present invention. 27, the same parts as those in FIG. 1 are designated by the same reference numerals, and the description thereof will be omitted.

As shown in FIGS. 27A and 27B, a plurality of slit-shaped laser beams 180 and 181 are reciprocally scanned within the processing area to form the antireflection film 105 and the resist film 106.
Then, the removal processing of the particles 111 is performed.

For processing, the processing area may be processed by relative scanning by fixing the slit / dot diaphragm and moving the substrate, but here, the substrate is fixed and the slit / dot diaphragm is moved. The machined area was machined.

Since the scanning distance of one laser beam irradiation region is reduced, the time required to process a predetermined processing region is shortened in inverse proportion to the number of slits arranged.

By repeating this reciprocal irradiation, particles adhering to the processed area were removed. As a result, it is possible to prevent particles from adhering to the processing region, and at the same time, it is possible to greatly reduce the processing time.

In the processing process, the observation system 220 composed of a CCD camera is used to count the particles inside and outside the processing area. Then, the image is stored before and after the laser irradiation, the difference is taken, and when the difference is almost 0, the processing in that portion is stopped, and when it is not the case, the processing is continued to perform the desired processing. Has finished processing.

Further, here, the antireflection film or the resist film was removed by scanning a plurality of slit-shaped irradiation regions relative to the substrate. However, the shape of the irradiation area is not limited to the slit shape, and as shown in FIG. 25C, a plurality of dot-shaped areas may be arranged and reciprocally scanned within the processing area. However, in the case of arranging in a dot shape, when the light intensity weakened at the boundary of the multi-slit irradiation region, when the multi-slit irradiation region was scanned and processed, an unprocessed region was formed in the long side direction in the processed region. At that time, as shown in FIG. 25D, when the light is scanned, the dots are arranged so that the long sides thereof overlap. By arranging a plurality of dots in this way, it is possible to perform processing in which there are no unprocessed regions and particles do not adhere to the substrate to be processed.

In the present embodiment, as shown in FIGS. 27 (a) and 27 (b), irradiation light is reciprocally scanned for processing, but the present invention is not limited to this. Even if the laser light 180 or 181 is scanned in either direction, the same amount of irradiation is performed on the processed surface even if scanning is performed for a period corresponding to twice the number of reciprocations performed in FIG. At this time, the length in the scanning direction of the area in which the plurality of slits formed in the slit / dot diaphragm is formed is set to be equal to or more than the predetermined number of scanning times of the processing area of the length in the scanning direction of the aperture of the field diaphragm. Is desirable. By setting the length of the area in which the slits are formed to be at least twice the number of times of scanning an opening that is substantially similar to the processing area, it is possible to scan the laser light the required number of times without stopping the slit / dot diaphragm. It can be carried out. By performing the processing without stopping the slit / dot diaphragm, the reciprocating movement of the slit / dot diaphragm, the adjustment of the laser beam, etc. can be omitted, and the processing time can be shortened.

Therefore, it is desirable that the pitch of the plurality of openings arranged in the mask is at least twice the length (W) of the openings in the pitch direction. Light having a shape similar to the opening formed in the mask is incident on the substrate. Therefore, it can be said that it is preferable that the pitch of the processing light irradiated adjacent to the substrate is twice or more the length of the irradiation shape of the processing light on the substrate in the scanning direction.

At this time, in consideration of the alignment accuracy, the scanning speed of the multi-slit, the irradiation energy and the irradiation area in the irradiation region are controlled near the boundary of the predetermined processing region so that the light is not irradiated to the outside of the end of the processing region. By doing so, generation of particles is prevented. As for the method, an optimal method may be selected as appropriate in consideration of the particle generation state and the slit arrangement.

The effects of this embodiment could be confirmed even when the laser processing was performed in the atmosphere or high-pressure air.

In this embodiment, the processed film on the alignment mark is completely removed, but the invention is not limited to this.
For example, if the alignment mark can be detected by the optical system used for the alignment measurement, the processing may be ended in a state where the processing film in the processing region remains slightly. For example, even if the thickness of the processed film was reduced to half, the alignment was able to be performed although the contrast was poor.

(Ninth Embodiment) In this embodiment, a method of reducing the processing time and removing particles scattered inside and outside the processing area will be described.

28 and 29 are sectional views showing the steps of manufacturing a semiconductor device according to the ninth embodiment of the present invention.
In this embodiment, light irradiation is performed with the substrate immersed in running water.

As shown in FIG. 28A, the multi-slit irradiation region R is reciprocally scanned between the first starting point and the first boundary. The direction of the water flow is changed according to the scanning direction so that the scanning direction and the water flow direction are different. In this state, the particles are caused to flow by the water flow, so that the particles adhere to the inside of the processing region and to the downstream side of the water flow.

The starting point is set so that the distance between the starting point and the end of the processing area on the first scanning direction side is equal to or larger than the width of the multi-slit irradiation area R. If the interval is less than the width of the multi-slit irradiation region R, the outside of the processing region will be processed.

Then, as shown in FIG. 28B, the second
The multi-slit irradiation region R is reciprocally scanned from the starting point to the other end (boundary 2) opposite to the boundary 1 of the predetermined processing region. The direction of the water flow is changed according to the direction of the scan so that the direction of the scan and the direction of the water flow are different (the direction of the water flow is opposite to the direction from the first origin to the first boundary).
Even in this state, since the particles are made to flow by the water flow, the particles do not exist outside the processing area, but remain inside the processing area.

Then, as shown in FIG. 29C, laser light 190 having a size similar to that of the processed region is irradiated. By the irradiation of the laser light 190, particles that cannot be completely removed by the reciprocal scanning of the multi-slit irradiation region R and remain in the processing region are removed.

In the processing process, the observation system 220 composed of a CCD camera is used to count the particles inside and outside the processing area. Then, the image is stored before and after the laser irradiation, the difference is taken, and when the difference is almost 0, the processing in that portion is stopped, and when it is not the case, the processing is continued to perform the desired processing. Has finished processing.

In this embodiment, the focus shift is used to reduce the irradiation area during the second and subsequent light irradiations.
It is not limited to this. For example, the imaging optical system 21 of FIG.
6 may have a zoom function, and the magnification after the second time may be slightly reduced for irradiation.

When the above method is used, the processing time can be greatly shortened by using the multi-slit, and the processed shape without particles adhering inside and outside the processing area can be obtained. The effects of this embodiment could be confirmed even when the laser processing was performed in the atmosphere or high-pressure air.

In the present embodiment, the processed film on the alignment mark is completely removed, but the present invention is not limited to this.
For example, if the alignment mark can be detected by the optical system used for the alignment measurement, the processing may be ended in a state where the processing film in the processing region remains slightly. For example, even if the thickness of the processed film was reduced to half, the alignment was able to be performed although the contrast was poor.

(Tenth Embodiment) FIG. 30 is a sectional view showing a manufacturing process of a semiconductor device according to a tenth embodiment of the present invention. In FIG. 30, the same parts as those in FIG. 1 are designated by the same reference numerals and the description thereof will be omitted. Specifically, a pressure controller was added to the liquid flow device shown in FIG. 3 to control the pressure of the circulating liquid.

As shown in FIGS. 30 (a) and 30 (b), the slit-shaped laser beams 300 and 301 are reciprocally scanned with respect to the substrate while a pressure of 10 atm is applied to the substrate. Let The processing area is processed by the reciprocal scanning of the laser light, and the antireflection film 105 and the resist film 10 are processed.
6 was removed.

As a result, the diameter of bubbles generated at the time of light irradiation can be made smaller, and the number of particles adhering to the inside and outside of the processing area can be greatly reduced, as compared with the case where desired processing was performed by the same method under normal pressure. I was able to do it.

In the processing process, the observation system 220 composed of a CCD camera is used to count the particles inside and outside the processing area. Then, the image is stored before and after the laser irradiation, the difference is taken, and when the difference is almost 0, the processing in that portion is stopped, and when it is not the case, the processing is continued to perform the desired processing. Has finished processing.

Also, in the present embodiment, as in the other embodiments described above, light is irradiated to the boundary of the processing area in consideration of the alignment accuracy with the predetermined processing area with respect to the irradiation position of the laser light, and the light is newly added. In order to prevent the generation of particles, the area of the irradiation shape is reduced at the boundary of the processing region, or the relative scanning speed between the laser beam and the substrate is reduced. As for the method, an optimal method with less particle adhesion is appropriately selected.

Although the processed film on the alignment mark is completely removed in the present embodiment, the present invention is not limited to this.
For example, if the alignment mark can be detected by the optical system used for the alignment measurement, the processing may be ended in a state where the processing film in the processing region remains slightly. For example, even if the thickness of the processed film was reduced to half, the alignment was able to be performed although the contrast was poor.

(Eleventh Embodiment) In this embodiment, the irradiation shape of the laser light is adjusted during the second and subsequent light irradiations in consideration of the irradiation position of the laser light and the alignment accuracy of a predetermined processing region with respect to the substrate. A method for reducing the size will be described.

In the present embodiment, the area of the irradiation region is controlled by changing the focus position for forming an image in the processing region on the substrate, and particles generated near the boundary of the processing region are prevented from adhering to the inside of the processing region. Describe how to do.

First, as shown in FIG. 31A, as in the previous embodiments, the first processing light 311 whose irradiation shape on the substrate is narrower than a predetermined processing region is applied to the substrate. The antireflection film 105 and the resist film 106 in a predetermined processing region are removed by relatively scanning the surface.

However, at this time, the image is not focused on the antireflection film 105 to be processed, but the distance between the optical system and the substrate 100 is intentionally set so that the light distribution on the antireflection film 105 is increased. Set to spread.

Therefore, the area where the light is actually irradiated on the antireflection film is larger than the area narrowed down by the visual field setting system. On the other hand, the irradiation energy density becomes weaker as the light spreads. Therefore, the irradiation energy is appropriately controlled so that the area having the light intensity necessary for processing in the spread light does not become less than the desired size.

Instead of forming an image on the antireflection film 105 to be processed, the distance between the optical system and the processing substrate is intentionally set so as to spread the light distribution on the antireflection film. At this time, the conditions for the distance D for separating the processing substrate from the image formation position are: (1) At least the distance D is different from the best focus.

(2) When the amount of deviation between the irradiation position of the laser beam and the substrate due to an alignment error or the like, or the processing allowance is Δ, the distance D is set so as to satisfy the following equation.

D> {Δ × {(1-NA ² ) ^1/2 } / NA NA is the numerical aperture of an optical system such as a condenser lens.

An error including the alignment accuracy between the laser beam irradiation position satisfying the above conditions and the substrate to be processed, the influence of the fluctuation of the liquid film on the substrate to be processed, etc. does not irradiate the boundary of the processed region with light. D is selected appropriately.

Then, as shown in FIG. 31B, the second
The processing light 312 of is scanned relative to the substrate. Two
Before the second and subsequent irradiations, the distance between the optical system and the past processing substrate is set to the image forming position. With this setting, the scanning area after the second scanning can be made substantially narrower than the scanning area after the first scanning. As a result, it is possible to prevent particles from being generated at the boundary of the processing area.

In the processing process, the observation system 220 composed of a CCD camera is used to count the particles inside and outside the processing area. Then, the image is stored before and after the laser irradiation, the difference is taken, and when the difference is almost 0, the processing in that portion is stopped, and when it is not the case, the processing is continued to perform the desired processing. Has finished processing.

In this embodiment, the processed film on the alignment mark is completely removed, but the present invention is not limited to this.
For example, if the alignment mark can be detected by the optical system used for the alignment measurement, the processing may be ended in a state where the processing film in the processing region remains slightly. For example, even if the thickness of the processed film was reduced to half, the alignment was able to be performed although the contrast was poor.

(Twelfth Embodiment) In this embodiment, a method of removing the lower antireflection film or removing the film thickness without removing the upper resist film will be described.

The light source for irradiation is Q-Switch N.
A pulse laser of the third harmonic (wavelength 355 nm) of the d-YAG laser was used. The energy density per irradiated pulse is usually 0.03 J / cm ^{2 to} 0.15 J / c.
m ² . This energy density is smaller than when both the resist film and the antireflection film are removed. The energy density is appropriately set so that the upper resist film is not broken by ablation of the antireflection film.

FIG. 32 shows a cross section when a laser beam having an irradiation shape having substantially the same size as the shape of the processing area is applied to the processing area. 32A to 32C are cross-sectional views showing the manufacturing steps of the semiconductor device according to the twelfth embodiment of the present invention. Figure 32
In FIG. 3, the same parts as those in FIG.

As shown in FIG. 32, the upper resist film 1
It can be seen that the lower antireflection film 105 is removed without destroying 06. No particles were observed to be attached on the resist film 106.

In the conventional removal by laser ablation, irradiation light passes through the resist film, ablation (explosion) occurs in the antireflection film, and scattered materials of the resist film and the antireflection film adhere to the vicinity of the removed region. On the other hand, when the irradiation dose is reduced to 0.03 J / cm ² , no instantaneous explosion occurs. As a result, it is considered that the gas generated by irradiating the antireflection film escaped from the porous resist film.

As described above, by irradiating with a lower irradiation amount than the conventional removal by ablation, only the antireflection film 105 was vaporized, and the generation of particles in the periphery of the removed portion could be eliminated.

However, due to the influence of the optical profile, the antireflection film 105 has a removed region,
Areas that have not been completely removed are mixed in the processed area.
This result shows that when the antireflection film is gradually vaporized and removed so as not to destroy the resist in the upper layer as in the present embodiment, it is significantly affected by the optical profile.

In order to solve this problem, the antireflection film in the processed area was removed by scanning a laser beam having an irradiation shape of slit.

The results are shown in FIG. FIG. 33 is a cross-sectional view showing the manufacturing process of the semiconductor device according to the twelfth embodiment of the present invention. 33, the same parts as those in FIG. 1 are designated by the same reference numerals, and detailed description thereof will be omitted.

FIG. 33A shows a state after the laser beam has been scanned once. Further, FIG. 33B shows a state after the laser light scanning is performed twice. further,
FIG. 33C shows a state after the laser light has been scanned three times.

As shown in FIG. 33, it can be seen that the antireflection film can be removed more uniformly by increasing the number of times the laser beam is scanned.

It is concluded that by using the above method, the lower antireflection film can be uniformly removed without destroying the upper resist film.

In this embodiment, laser light is used as the irradiation light, but it is also possible to irradiate light having a wavelength at which an antireflection film such as a KrF excimer lamp absorbs light. Further, as the light irradiation method this time, the method shown in the first embodiment is used, but in addition to this, any method of the above-described embodiments may be appropriately selected to a method in which particles are not attached.

In the present embodiment, the third source of the Q-Switch Nd-YAG laser is used as the light source of the light to be irradiated.
Although a pulsed laser with a higher harmonic wave is used, the present invention is not limited to this. If the absorption coefficient of the antireflection film is larger than that of the resist film formed thereabove, and preferably has a wavelength satisfying the condition of at least twice the Q-Switch.
Fourth harmonic of Nd-YAG laser (wavelength 266nm),
A pulsed laser such as KrF excimer laser may be used.

In the present embodiment, the energy density per irradiated pulse is 0.03 J / cm ^{2 to} 0.15.
J / cm ² is set, but the present invention is not limited to this. It is important to optimize the parameters so that the upper resist film does not bump.

Further, the irradiation shape is not limited to the long slit shape, and a dot shape or a plurality of these arranged is appropriately selected.

Further, in this embodiment, the irradiation dose for removing the antireflection film is set to 0.03 J / cm ² , but the irradiation amount is not limited to this. The irradiation amount may be such that only the antireflection film is removed to form the cavity region. Also, instead of removing the entire antireflection film, the irradiation dose is further reduced,
The same effect can be obtained by making the film thickness as thin as the alignment light can be detected.

In this embodiment, the processed film on the alignment mark is completely removed, but the present invention is not limited to this.
For example, if the alignment mark can be detected by the optical system used for the alignment measurement, the processing may be ended in a state where the processing film in the processing region remains slightly. For example, even if the thickness of the processed film was reduced to half, the alignment was able to be performed although the contrast was poor.

(Thirteenth Embodiment) A case where only the antireflection film formed on the alignment mark is selectively removed will be described below with reference to the drawings. In this embodiment, the pattern transfer film (intermediate film) is provided between the resist and the antireflection film. Since the details of the substrate to be processed are the same as those in the first embodiment, they are omitted here and the method of forming a resist pattern on the substrate to be processed will be described.

FIG. 34 is a sectional view showing a manufacturing process of a semiconductor device according to the thirteenth embodiment of the present invention. In addition,
34, the same parts as those in FIG. 1 are designated by the same reference numerals, and detailed description thereof will be omitted.

First, as shown in FIG. 34A, an antireflection film 321 having a film thickness of 300 nm is formed on the interlayer insulating film 101 by a spin coating method. Here, as the antireflection film 321, an inorganic material containing carbon fine particles is used. Next, a silicon oxide film 322 which is a pattern transfer film is formed on the antireflection film 321 by a spin coating method to have a film thickness of 80 nm.

This substrate is conveyed to the laser irradiation device shown in FIG. Then, only the antireflection film on the region including the alignment mark 102 and the alignment inspection mark (not shown) was removed by the method described in the above embodiment. The details will be described below. In the present embodiment, the fourth harmonic of the Nd-YAG laser (wavelength 266n
m) as irradiation light and the irradiation amount condition is 0.025 J / cm ²
And Here, the irradiation amount condition is set to be a hollow state in which only the antireflection film is removed, as in the twelfth embodiment. In this case, adhesion of particles was not observed at all in the vicinity of the removed area.

This is because unlike the conventional laser ablation, when the irradiation dose was reduced to 0.025 J / cm ² , the gas generated by the laser irradiation escaped from the intermediate film without causing an instantaneous explosion. It is probable that the scattering of the intermediate layer did not occur.

As described above, by irradiating with a lower irradiation amount than in the conventional removal by ablation, only the antireflection film was vaporized, and the generation of particles around the removed portion could be eliminated.

Then, as shown in FIG. 34C, a chemically amplified positive resist film 323 for ArF light (wavelength 193 nm) having a film thickness of 300 nm is formed by spin coating.

Furthermore, the substrate to be processed is conveyed to a step-and-repeat type reduction projection exposure apparatus using an ArF excimer laser as a light source, and the pattern to be exposed and the substrate to be processed are exposed.
After performing the ETTR type alignment, the desired pattern was exposed in the substrate to be processed. After that, PEB (Post E
After performing a heat treatment called xposure Bake), it was developed with an alkali developing solution to form a desired resist pattern.

As described above, by removing only the antireflection film in a particle-free manner, it was possible to realize highly accurate alignment without degrading the yield.

In this embodiment, the fourth harmonic of the Nd-YAG laser is used as the light source for removing the antireflection film, but the light source is not limited to this. It is desirable to select the light source according to the optical constant of the film to be removed.

Further, in the present embodiment, the irradiation dose for removing the antireflection film is set to 0.025 J / cm ² , but the irradiation amount is not limited to this. The irradiation amount may be such that only the antireflection film is removed to form the cavity region. Further, the same effect can be obtained by reducing the irradiation amount and reducing the film thickness to a level at which the alignment light can be detected, instead of removing the entire antireflection film.

Although the processed film on the alignment mark is completely removed in this embodiment, the invention is not limited to this.
For example, if the alignment mark can be detected by the optical system used for the alignment measurement, the processing may be ended in a state where the processing film in the processing region remains slightly. For example, even if the thickness of the processed film was reduced to half, the alignment was able to be performed although the contrast was poor.

Further, when the alignment was performed on the alignment inspection mark, it was confirmed that the alignment was performed with high accuracy. Conventionally, there was an antireflection film on the alignment inspection mark, so the accuracy of the inspection was poor.

(Fourteenth Embodiment) In the above embodiments, the method of removing at least the antireflection film used in the lithography step by light irradiation in the ETTR alignment has been described.

On the other hand, the semiconductor device has a polyimide film,
Films that are opaque to the exposure wavelength used in the lithography process such as Si polycrystal film, organic interlayer insulating film, silicon nitride film, and silicon carbide film are also formed. If these opaque films are formed on the alignment mark, ETT
There arises a problem that R alignment becomes impossible.

In this embodiment, a method of removing these opaque films will be described.

35 and 36 are sectional views showing the steps of manufacturing a semiconductor device according to the fourteenth embodiment of the present invention.

As shown in FIG. 35A, a semiconductor device 400 in the process of manufacturing is prepared. SiO _{2 on the} Si substrate 401
An alignment mark 402 and an element isolation insulating film 403 are formed. An interlayer insulating film 406 made of an organic material on the Si substrate 401 and the alignment mark 402.
Are formed. A large number of semiconductor elements 404 such as transistors and capacitors are formed in the device pattern area of the Si substrate 401. In this device, since the interlayer insulating film 406 made of an organic material absorbs the exposure wavelength, ETTR alignment cannot be performed only by removing the antireflection film. Reference numeral 405 is a gate insulating film.

In this embodiment, as shown in FIG. 35B, an antireflection film 407 is formed on the interlayer insulating film 406. Next, as shown in FIG. 35C, the antireflection film 407 and the interlayer insulating film 406 are removed by light irradiation. As the light irradiation method, one of the methods described in the above-described embodiments is appropriately selected without particle adhesion.

Thereafter, as shown in FIG. 34D, a resist film 408 is formed by coating on the entire surface. In the state shown in FIG. 34D, since the film that completely absorbs the exposure light is not formed on the alignment mark 402, the alignment mark can be observed at the exposure wavelength.

That is, the ETTR alignment can be performed, the alignment can be performed with high accuracy, and the resist can be patterned as shown in FIG.

Next, as shown in FIG. 36F, the interlayer insulating film 406 is patterned using the patterned resist film 408 as a mask, and the via hole can be formed with high precision. After that, the resist film 408 and the antireflection film 407 are removed.

In the present embodiment, the processed film on the alignment mark is completely removed, but the present invention is not limited to this.
For example, if the alignment mark can be detected by the optical system used for the alignment measurement, the processing may be ended in a state where the processing film in the processing region remains slightly. For example, even if the thickness of the processed film was reduced to half, the alignment was able to be performed although the contrast was poor.

(Fifteenth Embodiment) A silicon nitride film or a silicon carbide film is formed on a Cu wiring pattern formed on a semiconductor device in order to suppress diffusion of Cu into the interlayer insulating film. There is. Since these films absorb light of the exposure wavelength, there arises a problem that ETTR alignment cannot be performed.

FIG. 37 is a sectional view showing a manufacturing process of a semiconductor device according to the fifteenth embodiment of the present invention.

First, as shown in FIG. 37A, a semiconductor device 500 in the process of being manufactured is prepared. This semiconductor device 50
At 0, a first interlayer insulating film 502 made of SiC is formed on a Si substrate 501. First interlayer insulating film 50
Alignment marks 503 and Cu wirings 504 are embedded and formed in 2. A silicon nitride film 505 is formed on the alignment mark 503 and the Cu wiring 504. A second interlayer insulating film 506 is formed on the silicon nitride film.

Then, as shown in FIG. 36B, an antireflection film 507 made of an organic material is formed on the second interlayer insulating film 506.
Is formed by coating. Then, the antireflection film 50 is irradiated with light.
7, second interlayer insulating film 506 and silicon nitride film 505
To remove.

Next, as shown in FIG. 37C, after forming a resist film 508, high-precision alignment is performed by ETTR alignment to form a resist pattern 508 for forming a wiring groove.

Then, as shown in FIG. 37 (d), RI
By the step E, a wiring groove is formed in the second interlayer insulating film 506. Then, the resist film 508 and the antireflection film 507 are removed.

As described above, by using the optical processing method of the present invention, it is possible to perform a lithography process in which alignment is performed by ETTR, and it is possible to form a pattern with high accuracy.

Although the processed film on the alignment mark is completely removed in this embodiment, the invention is not limited to this.
For example, if the alignment mark can be detected by the optical system used for the alignment measurement, the processing may be ended in a state where the processing film in the processing region remains slightly. For example, even if the thickness of the processed film was reduced to half, the alignment was able to be performed although the contrast was poor.

(Sixteenth Embodiment) The optical processing method of the present invention can also be applied to the case where a photosensitive polyimide film is formed on a semiconductor device and patterned by a lithography process.

Particularly, the photosensitive polyimide absorbs not only the exposure wavelength but also the wavelength light in the visible region, and there is a problem that it is difficult to observe the mark formed in the lower layer. If the mark formed in the lower layer is a step pattern,
The non-uniformity of the film thickness of the polyimide film on the mark deteriorates the alignment accuracy, resulting in many misalignment.

FIG. 38 is a sectional view showing a manufacturing process of a semiconductor device according to the sixteenth embodiment of the present invention.

First, as shown in FIG. 38A, a semiconductor device 600 in the process of being manufactured is prepared. This semiconductor device 60
0, a first interlayer insulating film 602 is formed on a Si substrate 601. An alignment mark 603 and an Al pad 604 are formed on the first interlayer insulating film 602. A photosensitive polyimide film 606 is formed on the first interlayer insulating film 602 via the second interlayer insulating film 605 so as to cover the alignment mark 603 and the Al pad 604.

As shown in FIG. 38B, the photosensitive polyimide film 6 on the alignment mark 603 is formed by the optical processing method.
06 is removed. Then, as shown in FIG. 38 (c),
When alignment is performed, the marks can be observed with high accuracy,
Alignment defects are drastically reduced. FIG. 38C shows the shape after the photosensitive polyimide is patterned by the lithography process and then the insulating film on the Al pad is processed by the RIE process.

As described above, the optical processing of the present invention can be applied not only to the removal of the resist film and its antireflection film, but also to various films formed on the marks of the semiconductor device. Is.

Although the processed film on the alignment mark is completely removed in this embodiment, the present invention is not limited to this.
For example, if the alignment mark can be detected by the optical system used for the alignment measurement, the processing may be ended in a state where the processing film in the processing region remains slightly. For example, even if the thickness of the processed film was reduced to half, the alignment was able to be performed although the contrast was poor.

(Seventeenth Embodiment) In this embodiment, another example of the optical shape forming section of the optical processing apparatus shown in FIG. 3 will be shown.

For example, instead of an aperture mask, an optical element (for example, Digital Micromirror Device (Texas Instruments Inc.) in which a plurality of micromirrors which are extremely smaller than the diameter of laser light and whose directions can be changed respectively are arranged two-dimensionally Registered trademark))) may be used. The optical element controls the orientation of each micromirror,
Optical images of arbitrary size and shape can be formed. Therefore, it is possible to irradiate the laser light of an optical image according to the size and the direction of the mark by controlling the direction of each of the micro-mirrors constituting this optical element.

That is, assuming that the field stop system and the S / D stop system are transmitted, the light / dark part grid information on the mask surface is generated as bright part + bright part → bright part other than the above → dark part.

It is desirable that the grid is fine, but for example, in a system in which the projection optical system is reduced to 1/20, the grid is subdivided on the aperture mask to about 5 μm (micromirrors of this size are two-dimensionally arranged). This bright and dark part grid information is given to the optical element, the angle of each micromirror is controlled so that the light is irradiated only on the bright part, and the laser light is irradiated on the substrate.

Further, when this optical system is used, it is possible to perform scanning with laser light while the substrate is stationary. Bright and dark part grid information may be calculated for each process time on the assumption of scanning with a laser beam, and given to the optical element for the corresponding process time for control. In this case, it is possible to process using only the optical element.

In the present embodiment, the processed film on the alignment mark is completely removed, but the present invention is not limited to this.
For example, if the alignment mark can be detected by the optical system used for the alignment measurement, the processing may be ended in a state where the processing film in the processing region remains slightly. For example, even if the thickness of the processed film was reduced to half, the alignment was able to be performed although the contrast was poor.

(Eighteenth Embodiment) In this embodiment, another example of the processing section having a mechanism for supplying running water to the processing area in the optical processing apparatus shown in FIG. 3 will be shown.

FIG. 39 is a diagram showing a schematic structure of a processing portion according to the eighteenth embodiment of the present invention. 39, the same parts as those in FIG. 3 are designated by the same reference numerals, and detailed description thereof will be omitted.

The running water system in this case does not use a circulation system, and the liquid 2 is supplied from the liquid supplier 701 through the liquid supply pipe 702.
39 is sent to the flow direction changer 703. Flow direction changer 7
03 is rotatable on the main surface of the substrate with respect to the vertical axis of the main surface. A liquid guide pipe 704 connected to the liquid supply pipe 702 is provided at one end of the flow direction converter 703, and liquid is further discharged from a discharge port 705 at the tip of the liquid guide pipe 704.
00 Supply to the main surface. The liquid 239 passes between the substrate 100 and the window 236, and is discharged from the discharge port 706 at a position facing the discharge port 705. The discharge port 706 is made wide so that the liquid 239 supplied onto the substrate 100 from the discharge port 705 does not generate a turbulent flow. Flow direction changer 7
03 is controlled so that the directions of the discharge port 705 and the discharge port 706 are changed so that the liquid has a preset flow direction with respect to the relative scanning direction of the substrate 100 and the laser light.

This processing section, for example, performs processing while scanning the laser beam relative to the processing area from the inside of the desired processing area to one side, stops the processing at one end, and then from the inside of the processing area to the other end. It can be used for the process of performing processing while scanning the processing region with the laser light toward. That is, when a water flow is generated in a direction opposite to the relative scanning direction of laser light during processing, it may be performed as shown in FIG. 40, for example. FIG. 40 is a plan view showing a processing state using the processing section shown in FIG. 39. Note that FIG.
The same parts as in 1 are denoted by the same reference numerals, and detailed description thereof will be omitted.

As shown in FIG. 40A, the irradiation area 71
When the moving direction of 2 moves from the right side to the left side of the drawing, the discharge port 705 of the flow direction changer 703 is on the left side of the processing area 711,
The outlets 706 are arranged so as to be respectively on the right hand side of the processing area to form a water stream. Further, when the moving direction of the irradiation region 712 moves from the left side to the right side of the drawing, as illustrated in FIG.
The water flow is arranged so that the discharge port 705 of the flow direction changer 703 is on the right hand of the processing region 711 and the discharge port 706 is on the left hand of the processing region 711 by relatively rotating around the 0 ° processing region 712. Form.

FIG. 41 shows a liquid supply device in which the liquid supply devices shown in FIGS. 39 and 40 are arranged so that their nozzle positions are opposite to each other. In this case, simply by moving the liquid supply mechanism in the processing region in a direction orthogonal to the flowing water direction,
It is possible to easily change the water flow direction. When processing is performed while relatively scanning the irradiation area from the inside of the processing area to the left side of the paper, the arrangement is performed as shown in FIG. 41 (a), and then the irradiation area is relatively scanned from the inside toward the right side of the paper. When processing is performed while performing the above, it may be performed as shown in FIG.

(Nineteenth Embodiment) FIG. 42 is a sectional view for explaining the problem of misalignment when forming metal wiring such as Al.

The cross-sectional view shown in FIG. 42 (a) shows a stage before the formation of Al wiring, and an Al wiring formed later is formed on the surface layer of the interlayer insulating film 802 formed on the semiconductor substrate 801. At least a via 805 connected to the above and an alignment mark 806 for performing alignment are formed. Note that reference numerals 803 and 804 are a plug and a lower wiring layer. Therefore, the alignment mark 80
Unevenness is formed on the surface of 6. The reason for this will be described later.

Next, as shown in FIG. 42B, the Al film 8 is formed.
07, an antireflection film 808, and a resist film 809 are sequentially formed. This Al film 807 upper layer and / or Al
A barrier metal composed of Ti, TiN, Ta, TaN or the like is formed in the lower layer of the film 807, but the illustration thereof is omitted.

In the state shown in FIG. 42B, the entire surface of the alignment mark 806 is covered with the Al film 807. Therefore, the alignment mark 806 cannot be detected directly. Therefore, the alignment is performed not by detecting the positional information of the alignment mark 806 formed in the via layer below the Al film 807 but by detecting the uneven shape of the surface of the Al film 807.

Therefore, in order to perform the alignment by the unevenness on the surface of the Al film 807, a step is provided in advance on the alignment mark 806 formed on the via layer, and when the Al film 807 is formed, the unevenness is formed on the surface of the Al film 807. Is about to occur.

The positional information of the alignment mark 806 is read by the unevenness of the surface of the Al film 807, and patterning is performed, so that the Al wiring layer 810 is formed as shown in FIG. 42 (c).
To form.

However, the surface irregularities of the Al film 807 are
Due to the nature of the film forming method such as sputter deposition, the asymmetry with respect to the unevenness of the base causes distortion in the position information, resulting in a large alignment error. This alignment error is A
This causes a contact failure between the 1 wiring layer 801 and the via 805, resulting in a problem that the chip yield is lowered.

Therefore, in order to increase the chip yield, the Al on the alignment mark 806 should be aligned before performing the alignment.
The alignment for selectively removing the film 807 and performing the lithography of the Al wiring layer needs to adopt a method of directly detecting the mark formed in the underlying via layer.

43 and 44 are sectional views showing the steps of manufacturing a semiconductor device according to the nineteenth embodiment of the present invention. 43 and 44, the same parts as those in FIG. 42 are designated by the same reference numerals, and detailed description thereof will be omitted.

First, as shown in FIG. 43A, after forming an Al film 811, a resist film 8 is formed on the Al film 811.
12 is formed. Then, as shown in FIG. 43 (b),
By irradiating the processing area of the Al film 811 on which the alignment mark and the alignment inspection mark (not shown) are formed below with laser light, the resist film 812 on the alignment mark is selectively removed. As a removing method, any of the methods described in the above-described embodiments may be used.

Next, the Al film 811 in the processing region is removed by using a method such as wet etching. The resist film 812 is removed by ashing. In this state,
The structure is such that the Al film 811 on the alignment mark 806 and the alignment inspection mark is selectively removed.

Al film 81 on alignment mark 806
In the state where 1 is selectively removed, as shown in FIG. 44D, an i-line resist film 814 / antireflection film 813 is formed. Next, alignment adjustment is performed using the position information of the alignment mark 806 formed on the via layer, and then exposure and development are performed to form a resist pattern 814 as shown in FIG.

When the alignment was performed on the alignment inspection mark, it was confirmed that the alignment was performed with high accuracy. Conventionally, the inspection was difficult because the Al film was also present on the alignment inspection mark, but the inspection was also very easy.

After the above-mentioned lithography process, FIG.
As shown in (f), the Al film 811 is processed by the RIE process or the like to form an Al wiring 815, and the resist pattern 814 and the antireflection film 813 are removed. By the manufacturing method described above, it is possible to pattern the Al wiring with few via contact defects.

In this embodiment, the processing apparatus capable of continuously forming the processed film and laser processing is used. However, the formation of the processed film and the laser processing may be performed by independent devices.

(Twentieth Embodiment) When the laser beam irradiation position and the alignment accuracy with respect to a predetermined processing area are not sufficient, a problem arises that a particle is newly generated from the boundary of the processing area each time reciprocal scanning is repeated. .

[0278] In the second embodiment in view of the alignment accuracy in the vicinity of the boundary of the processing region, the irradiation shape of the illumination profile in the processing region center portion by controlling the field of view setting system with light irradiation the second and subsequent By making it smaller than the above, the generation of particles generated near the edge of the processing area is suppressed,
The method for preventing the particles from adhering to the processed area has been described.

[0279] For the same purpose as above, by processing the desired processing area while shifting the irradiation position of the laser beam,
A method for suppressing the generation of particles will be described.

FIG. 45 is a plan view showing an optical processing method according to the twentieth embodiment of the present invention.

First, as shown in FIG. 45 (a),
The first region R ₁ is processed by scanning a laser beam having a slit-shaped irradiation shape on the substrate relatively to the substrate. One apex of the first region R ₁ is in contact with one apex of the processing region R ₀ .

Then, as shown in FIG.
The irradiation area of the light is the first area R₁To the second region R₂Strange
To change. This second region R₂One vertex of the
Area R ₁Machining area R where the tops of₀To one of the vertices of
Touching. And the first region R₁Like the second
Region R₂The inner processing film is processed.

Hereinafter, as shown in FIG. 45C, the irradiation area of the laser beam is changed from the _second area R ₂ to the third area R ₃ . One apex of this third region R ₃ is defined by the regions R ₁ and R 3.
_{The two} vertices are in contact with one of the vertices of the processing region R ₀ which is not in contact. Then, similarly to the first region R ₁ , the processing film in the region C is processed.

Hereinafter, as shown in FIG. 45 (d), the laser light irradiation area is changed from the _third area R ₃ to the fourth area R ₄ . One apex of the fourth region R ₄ is defined by the regions R ₁ and R 4.
The vertices of ₂ and R ₃ are in contact with one of the vertices of the processing region R ₀ which is not in contact. Then, like the first region R ₁ , the fourth region
The processed film in the region R ₄ is processed. Through the above steps, the processing film in the processing region R ₀ is processed.

Finally, as shown in FIG. 45 (e), the fifth region R ₅ set within the processing region R ₀ is repeatedly reciprocally scanned with a long slit-shaped laser beam to produce the fifth region R 5. Particles remaining in the region R ₅ are removed to form a predetermined processed shape. It is also possible to irradiate the inside of the fifth region R _{5 all} at once to remove the remaining particles and form a predetermined processed shape.

As described above, by forming the predetermined processing region while shifting the irradiation position, the number of times of light irradiation to the edge of the processing region can be minimized. Therefore, it is possible to suppress the generation of particles from a predetermined processing area and prevent the particles from adhering to the processing area.

In the process of processing the fifth region R ₅ , C
Particles inside and outside the processing area are counted by using the observation system 220 including a CD camera. Then, the image is stored before and after the laser irradiation, the difference is taken, and when the difference is almost 0, the processing in that portion is stopped, and when it is not the case, the processing is continued to perform the desired processing. Has finished processing.

The number of times of scanning in the fifth region R ₁ can be reduced by setting the region that is redundantly scanned in the regions R _{1 to} R ₄ as the fifth region R ₅ .

The scanning area may be changed by moving the position of the visual field setting system or moving the substrate.

In this embodiment, the processed film on the alignment mark is completely removed, but the invention is not limited to this.
For example, if the alignment mark can be detected by the optical system used for the alignment measurement, the processing may be ended in a state where the processing film in the processing region remains slightly. For example, even if the thickness of the processed film was reduced to half, the alignment was able to be performed although the contrast was poor.

(Twenty-first Embodiment) If the alignment accuracy with respect to the irradiation position and the predetermined processing area is not sufficient, there is a problem that new particles are generated from the boundary of the processing area each time reciprocating scanning is repeated.

In the second embodiment, considering the alignment accuracy in the vicinity of the boundary of the region to be processed, the irradiation shape is controlled from the irradiation shape in the central portion of the processing region by controlling the visual field setting system in the second and subsequent light irradiations. The method of suppressing the generation of particles generated near the edge of the processing region and preventing the particles from adhering to the region to be processed has been described by making the size smaller.

In the twentieth embodiment, a predetermined processing area is processed by changing the scanning area without changing the size of the visual field setting system. For the same purpose as this, this embodiment describes a method of performing processing by irradiating light while vibrating the substrate to be processed.

FIG. 46 is a sectional view showing a manufacturing process of the semiconductor device according to the twenty-first embodiment of the present invention. First,
As shown in FIG. 46A, the substrate 1 is formed by a piezoelectric element or the like.
The processed film is processed by scanning the slit-shaped laser beam 821 that is narrowed down while applying vibration to 00 at least in the horizontal direction. At this time, as shown in FIG. 47, the region R _f actually irradiated by one pulse irradiation is wider than the region R _i irradiated with the laser light in the absence of vibration.
FIG. 47 is a plan view showing an irradiation region of one pulse of laser light. Therefore, when the laser beam is scanned while the substrate 100 is vibrated, the area actually processed becomes wider than the area processed without vibrating the substrate.

Next, the piezoelectric element drive control circuit is cut off, and the long slit-shaped laser beam 822 is repeatedly reciprocally scanned within the processed region without vibrating the substrate, as shown in FIG. 46 (b). Particles remaining in the processing area are removed. Particles remaining in the processing region may be removed by collective irradiation.

In the present embodiment, the substrate is vibrated, but a piezoelectric element may be provided in the visual field setting system to vibrate.

In the second and subsequent scanning processes, the CCD
Particles inside and outside the processing area are counted using the observation system 220 including a camera. Then, the image is stored before and after the laser irradiation, the difference is taken, and when the difference is almost 0, the processing in that portion is stopped, and when it is not the case, the processing is continued to perform the desired processing. Has finished processing.

In the present embodiment, the processed film on the alignment mark is completely removed, but the present invention is not limited to this.
For example, if the alignment mark can be detected by the optical system used for the alignment measurement, the processing may be ended in a state where the processing film in the processing region remains slightly. For example, even if the thickness of the processed film was reduced to half, the alignment was able to be performed although the contrast was poor.

(Twenty-second Embodiment) In the second embodiment,
In the vicinity of the boundary of the processing region in consideration of the alignment accuracy, the light irradiation the second and subsequent to be smaller than the irradiation shape of the illumination profile by controlling the field of view setting based at machining area central portion, the processing region The method of suppressing the generation of particles generated near the edge of the and preventing the particles from adhering to the processed region was described.

In the present embodiment, the processing is performed by changing the distance between the window 236 of the optical processing apparatus 200 shown in FIG. 3 and the surface of the substrate 100 according to the number of times of scanning the laser light.

FIG. 48 is a sectional view showing a manufacturing process of a semiconductor device according to the 22nd embodiment of the present invention.

First, as shown in FIG. 48 (a), the substrate 1
00 by controlling the distance between the surface and the window 236.
The thickness of the liquid 239 on 00 is set to D1. Then, the processing film is processed by scanning the slit-shaped laser light 831 that is narrowed down.

Since the laser beam is refracted when entering the pure water,
The area of the irradiation region is A1.

Then, as shown in FIG. 48 (b), the window 2
The distance between 36 and the surface of the substrate 100 is changed to set the thickness of the liquid 239 on the substrate 100 to D2 (<D1). And
Again, a long slit-shaped laser beam is repeatedly reciprocally scanned in the processing area by setting the same scanning area as the first scanning.

As the liquid 239 becomes thin, the liquid 239
The influence of the refraction of the laser light inside is reduced. Therefore, as shown in FIG. 49, the area A2 of the irradiation region of one pulse of laser light is smaller than the area A1. Therefore, the second scanning area can be made smaller than the first scanning area. FIG. 49 is a plan view showing an irradiation area of one pulse of laser light.

As described above, by changing the liquid film thickness on the substrate to be processed during the processing, it is possible to suppress the generation of particles from the boundary of the processing region and prevent the particles from adhering in the processing region. Things are possible.

In the second scanning process, the observation system 220 composed of a CCD camera is used to count the particles inside and outside the processing area. Then, the image is stored before and after the laser irradiation, the difference is taken, and when the difference is almost 0, the processing in that portion is stopped, and when it is not the case, the processing is continued to perform the desired processing. Finish the processing of.

In this embodiment, the processed film on the alignment mark is completely removed, but the present invention is not limited to this.
For example, if the alignment mark can be detected by the optical system used for the alignment measurement, the processing may be ended in a state where the processing film in the processing region remains slightly. For example, even if the thickness of the processed film was reduced to half, the alignment was able to be performed although the contrast was poor.

The present invention is not limited to the above-described embodiments, but can be variously modified in the implementation stage within the scope of the invention. Furthermore, the embodiments include inventions at various stages, and various inventions can be extracted by appropriately combining a plurality of disclosed constituent elements. For example, even if some constituent elements are deleted from all the constituent elements shown in the embodiment, the problem described in the section of the problem to be solved by the invention can be solved, and the effect described in the section of the effect of the invention can be solved. When the above is obtained, the configuration in which this constituent element is deleted can be extracted as the invention.

[0310]

As described above, according to the present invention, it is possible to prevent particles generated during optical processing from adhering to the outside of the processing area.

[Brief description of drawings]

FIG. 1 is a cross-sectional view showing a manufacturing process of a semiconductor device according to a first embodiment.

FIG. 2 is a cross-sectional view showing a manufacturing process of the semiconductor device according to the first embodiment.

FIG. 3 is a diagram showing a configuration of an optical processing apparatus according to the first embodiment.

FIG. 4 is a diagram showing a schematic configuration of an optical shape forming section.

FIG. 5 is a diagram showing a configuration of a visual field setting system according to the first embodiment.

FIG. 6 is a diagram showing an operation example of a visual field setting system.

FIG. 7 is a diagram showing a configuration of a visual field setting system according to the first embodiment.

FIG. 8 is a diagram showing a configuration of a slit / dot setting system according to the first embodiment.

FIG. 9 is a diagram showing a configuration of a slit / dot setting system according to the first embodiment.

FIG. 10 is a plan view showing an example of a diaphragm of a slit / dot setting system according to the first embodiment.

FIG. 11 is a plan view showing an example of a diaphragm of a slit / dot setting system according to the first embodiment.

FIG. 12 is a plan view showing the manufacturing process of the semiconductor device according to the first embodiment.

FIG. 13 is a diagram showing a surface state of the substrate after the film is removed by the method according to the first embodiment.

FIG. 14 is a diagram showing a surface state of a substrate after removing a film by a conventional method.

FIG. 15 is a cross-sectional view showing the manufacturing process of the semiconductor device according to the first embodiment.

FIG. 16 is a view showing the manufacturing process of the semiconductor device according to the second embodiment.

FIG. 17 is a view showing a manufacturing process of the semiconductor device according to the second embodiment.

FIG. 18 is a view showing a manufacturing process of the semiconductor device according to the third embodiment.

FIG. 19 is a view showing the manufacturing process of the semiconductor device according to the third embodiment.

FIG. 20 is a view showing the manufacturing process of the semiconductor device according to the fourth embodiment.

FIG. 21 is a view showing the manufacturing process of the semiconductor device according to the fourth embodiment.

FIG. 22 is a view showing the manufacturing process of the semiconductor device according to the fifth embodiment.

FIG. 23 is a view showing the manufacturing process of the semiconductor device according to the fifth embodiment.

FIG. 24 is a cross-sectional view showing the manufacturing process of the semiconductor device according to the sixth embodiment.

FIG. 25 is a cross-sectional view showing the manufacturing process of the semiconductor device according to the seventh embodiment.

FIG. 26 is a plan view showing a diaphragm mounted on the S / D diaphragm system according to the eighth embodiment.

FIG. 27 is a cross-sectional view showing the manufacturing process of the semiconductor device according to the eighth embodiment.

FIG. 28 is a cross-sectional view showing the manufacturing process of the semiconductor device according to the ninth embodiment.

FIG. 29 is a cross-sectional view showing the manufacturing process of the semiconductor device according to the ninth embodiment.

FIG. 30 is a cross-sectional view showing the manufacturing process of the semiconductor device according to the tenth embodiment.

FIG. 31 is a cross-sectional view showing the manufacturing process of the semiconductor device according to the eleventh embodiment.

FIG. 32 is a cross-sectional view showing the manufacturing process of the semiconductor device according to the twelfth embodiment.

FIG. 33 is a cross-sectional view showing the manufacturing process of the semiconductor device according to the twelfth embodiment.

FIG. 34 is a cross-sectional view showing the manufacturing process of the semiconductor device according to the thirteenth embodiment.

FIG. 35 is a cross-sectional view showing the manufacturing process of the semiconductor device according to the fourteenth embodiment.

FIG. 36 is a cross-sectional view showing the manufacturing process of the semiconductor device according to the fourteenth embodiment.

FIG. 37 is a cross-sectional view showing the manufacturing process of the semiconductor device according to the fifteenth embodiment.

FIG. 38 is a cross-sectional view showing the manufacturing process of the semiconductor device according to the sixteenth embodiment.

FIG. 39 is a view showing a schematic configuration of a processing portion according to the eighteenth embodiment.

40 is a plan view showing a processing state using the processing portion shown in FIG. 38. FIG.

FIG. 41 is a diagram showing a configuration of a liquid supply device.

FIG. 42 is a cross-sectional view for explaining the problem of misalignment when forming a metal wiring such as Al.

FIG. 43 is a cross-sectional view showing the manufacturing process of the semiconductor device according to the nineteenth embodiment.

FIG. 44 is a cross-sectional view showing the manufacturing process of the semiconductor device according to the nineteenth embodiment.

FIG. 45 is a plan view showing an optical processing method according to the twentieth embodiment.

FIG. 46 is a cross-sectional view showing the manufacturing process of the semiconductor device according to the twenty-first embodiment.

FIG. 47 is a plan view showing an irradiation region of one pulse of laser light.

FIG. 48 is a cross-sectional view showing the manufacturing process of the semiconductor device according to the twenty-second embodiment.

FIG. 49 is a plan view showing an irradiation area of one pulse of laser light.

[Explanation of symbols]

101 ... Semiconductor substrate 102 ... Alignment mark 103 ... Wiring pattern 104 ... Interlayer insulating film 105 ... Antireflection film 106 ... Chemically amplified positive resist film 107 ... Alignment light 109 ... Resist pattern 110 ... Laser light 111 ... Particles

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification code FI theme code (reference) H01L 21/302 201 B23K 101: 40 // B23K 101: 40 H01L 21/30 522Z (72) Inventor Hiroshi Ikegami Shin-Sugita-cho, Isogo-ku, Yokohama-shi, Kanagawa 8 Incorporated company Toshiba Yokohama Works (72) Inventor Shinichi Ito 8-Shin-Sugita-cho, Isogo-ku, Yokohama-shi, Kanagawa (72) Incorporated company Riichiro Takahashi Kanagawa F-term in Toshiba Corporation Yokohama Works, 8 Shinsita-cho, Isogo-ku, Yokohama, Japan (reference) 4E068 AH00 CD05 CD10 CE03 CJ07 DA10 5F004 AA09 BA20 BB03 DB07 DB23 DB25 EA38 EB08 5F046 EA12 EA17 EB01 FC02

Claims (67)

[Claims] 1. A processing method which selectively removes or reduces a processing region of a processing film formed on a substrate, wherein an irradiation shape on the substrate is smaller than the processing region.
Scanning the processing light of relative to the substrate to selectively process the processing film in the processing region, and irradiating a region inside the processing region with the second processing light. And a step of selectively processing the processed film in a region inside the processed region. 2. The processing method according to claim 1, wherein the irradiation shape of the first processing light on the substrate is a slit shape or a dot shape. 3. The processing method according to claim 2, wherein a plurality of the first processing lights are periodically emitted along the scanning direction. 4. The pitch of the first processing light radiated on the substrate adjacent to the scanning direction is the first pitch on the substrate.
4. The processing method according to claim 3, wherein the irradiation shape of the processing light is at least twice the length in the scanning direction. 5. The pitch of the first processing light irradiated on the substrate adjacent to the scanning direction is 1/2 or less of the length of the processing region in the scanning direction. The processing method according to claim 3 or 4. 6. The pitch of the first processing light irradiated on the substrate adjacent to the scanning direction is set to be larger than the diameter of bubbles generated by the irradiation of the first processing light. The processing method according to claim 4 or 5, which is characterized. 7. The processing method according to claim 1, wherein the first processing light is scanned relative to the substrate from one end to the other end of the processing region. 8. The processing by the first processing light is performed by scanning the first processing light relative to the substrate from a first starting point set in the processing area to one end of the processing area. And a step of scanning the first processing light relative to the substrate from a second starting point set between the first starting point and the one end to the other end of the processing region. The processing method according to claim 1, further comprising: 9. The processing method according to claim 1, wherein the processing by the first processing light is performed in a state where the surface of the processing region is covered with running water. 10. The processing by the first processing light is performed in running water flowing in a direction substantially parallel to a scanning direction of the first processing. Processing method. 11. The processing by the first processing light is performed in running water that flows in a direction substantially anti-parallel to the scanning direction of the first processing. Processing method. 12. In a scanning area set in the processing area, a second processing light whose irradiation shape on the substrate is smaller than the scanning area is relatively scanned with respect to the substrate. The processing method according to claim 1, characterized in that 13. The processing method according to claim 12, wherein the scanning region is determined on the basis of the positional deviation accuracy of the irradiation position of the second processing light. 14. The processing method according to claim 12, wherein the irradiation shape of the second processing light on the substrate is a slit shape or a dot shape. 15. The processing method according to claim 14, wherein a plurality of the second processing lights are periodically emitted in the scanning direction. 16. The pitch of the second processing light radiated on the substrate adjacent to the scanning direction is 2 times the length of the irradiation shape of the second processing light on the substrate in the scanning direction. 16. The processing method according to claim 15, wherein the number is twice or more. 17. The pitch of the second processing light irradiated on the substrate adjacent to the scanning direction is ½ or less of the length of the scanning region in the scanning direction. The processing method according to claim 16. 18. The pitch of the second processing light radiated on the substrate adjacent to the scanning direction is set to be larger than the diameter of bubbles generated by the irradiation of the second processing light. The processing method according to claim 16 or 17. 19. From one end to the other end of the scanning area,
The processing method according to claim 12, wherein the second processing light is scanned relative to the substrate. 20. The second processing light is scanned relative to the substrate by scanning the second processing light from a first starting point set in the scanning area to one end of the scanning area. Scanning, and scanning the second processing light relative to the substrate from the second starting point set between the first starting point and the one end to the other end of the scanning region. The method according to claim 12, further comprising a step. 21. The processing method according to claim 12, wherein the scanning of the second processing light is performed a plurality of times within the scanning region. 22. When the irradiation position of the second processing light approaches the edge of the scanning region, the area of the irradiation shape of the second processing light on the substrate is changed to the irradiation shape at the central portion. The processing method according to claim 12, wherein the processing method is smaller. 23. The processing method according to claim 12, wherein when the irradiation position of the second processing light approaches the end of the scanning region, the scanning speed of the second processing light is slowed down. . 24. The processing method according to claim 1, wherein the processing with the second processing light is performed in a state where the surface of the scanning region is covered with running water. 25. The processing by the second processing light is performed in running water flowing in a direction substantially parallel to the scanning direction of the second processing. Processing method. 26. The processing by the second processing light is performed in running water flowing in a direction substantially anti-parallel to the scanning direction of the first processing.
The described processing method. 27. The processing method according to claim 1, wherein the collective irradiation area set in the processing area is subjected to the collective irradiation with the second processing light one or more times. 28. The processing method according to claim 17, wherein the collective irradiation region is determined on the basis of the positional deviation accuracy of the irradiation position of the second processing light. 29. The amount of deviation of the focal position of the second processing light is smaller than the amount of deviation of the focal position of the first processing light, or the second processing light is imaged on the substrate. The processing method according to claim 1, wherein the magnification is set to be smaller than an image forming magnification of the first processing light on the substrate to be processed. 30. The processing method according to claim 1, wherein the processing of the processed film is performed in a state where the processed film is pressed. 31. The processed film is a laminated film in which a second film is formed on a first film, and the processed film is processed while maintaining the second film. The processing method according to claim 1, wherein a part thereof is vaporized. 32. The processing method according to claim 1, wherein the processed film is formed above an alignment mark. 33. The processing method according to claim 32, wherein the processed film is a laminated film of an antireflection film and a resist film. 34. The processing method according to claim 1, wherein the processed film is polyimide, an organic insulating film, a silicon nitride film, or a silicon carbide film. 35. The processing method according to claim 32, wherein the processing area is an area including an alignment mark. 36. After processing the processed film, irradiating the alignment mark with a first energy beam, and obtaining position information of the alignment mark from the energy beam reflected from the alignment mark, 4. A step of irradiating the resist film with a second energy ray on the basis of the positional information to form a desired latent image pattern on the resist film.
The processing method according to item 5. 37. A step of forming a first film on a substrate, a step of forming a second film on the first film, and the step of selectively irradiating the substrate with a processing energy beam to form the second film.
And a process of vaporizing the first film while removing the first film to remove a part of the first film or reduce the film thickness. 38. The processing method according to claim 37, wherein the first film is an antireflection film. 39. The processing method according to claim 37, wherein the second film is a resist film. 40. The processing method according to claim 37, wherein the second film is an intermediate film, and further comprising a step of forming a resist film on the intermediate film. 41. The processing method according to claim 40, wherein the step of forming a resist film on the intermediate film is performed after processing the processed film. 42. The processing method according to claim 40, wherein the intermediate film is a silicon oxide film. 43. The processing method according to claim 42, wherein the silicon oxide film is an SOG film. 44. The substrate has an alignment mark,
The processed region is a region including the alignment mark, and after the first film is processed, the alignment mark is irradiated with a first energy ray, and the alignment is performed from an energy ray reflected from the alignment mark. A step of obtaining position information of the mark, and a step of irradiating the resist film with a second energy beam on the basis of the position information to form a desired latent image pattern on the resist film. 4. The method according to claim 3,
The processing method according to any one of 7 to 41. 45. The wavelength of the first energy ray and the wavelength of the second energy ray are the same.
4. The processing method described in 4. 46. The processing method according to claim 44, wherein the irradiation of the first energy ray and the irradiation of the second energy ray are performed by the same optical system. 47. The processing method according to claim 44, wherein the processing energy ray is light having a wavelength absorbed by the first film. 48. A step of preparing a base body having alignment marks formed in or on the semiconductor substrate; a step of forming an antireflection film and a resist film on the base body. Using the processing method described in, a step of processing the antireflection film of the processing area including the area where the alignment mark is formed, a step of transporting the substrate to an exposure device, using the alignment mark, A step of performing alignment adjustment, a step of forming a latent image of the semiconductor circuit on the resist film after the alignment adjustment, a step of developing the resist film to form a resist pattern, and a step of forming the resist pattern using the resist pattern A method of manufacturing a semiconductor manufacturing apparatus, comprising the step of processing a substrate. 49. A step of preparing a base body having alignment marks formed in or on the semiconductor substrate; a step of forming an antireflection film and a resist film on the base body; By the method, a step of processing an antireflection film in a processing area including an area in which the alignment mark is formed, a step of transporting the substrate to an exposure device, a step of performing alignment adjustment using the alignment mark After the alignment adjustment, a step of forming a latent image of the semiconductor circuit on the resist film, a step of developing the resist film to form a resist pattern, and a step of processing the substrate using the resist pattern. A method of manufacturing a semiconductor manufacturing apparatus, comprising: 50. A step of preparing a base body having alignment marks formed in or on the semiconductor substrate; a step of forming an antireflection film and an intermediate film on the base body; A step of processing an antireflection film in a processing area including an area in which the alignment mark is formed, a step of forming a resist film on the intermediate film, a step of transporting the substrate to an exposure device, A step of performing alignment adjustment using an alignment mark; a step of forming a latent image of the semiconductor circuit on the resist film after the alignment adjustment; a step of developing the resist film to form a resist pattern; And a step of processing the substrate using a resist pattern. 51. A processing apparatus for selectively processing a processing region of a processing film formed on a substrate, comprising: a substrate holding unit for holding the substrate; and a part of the processing film selectively reduced or A radiation source that generates an energy beam to be removed, a molding unit that is disposed on the optical axis of the energy beam, and that molds the energy beam generated by the light source, and the energy beam molded by the molding unit to the substrate. A scanning unit that relatively scans the liquid and a liquid supply unit that continuously supplies the liquid to the surface of the processing region of the substrate while changing the flow direction of the liquid according to the scanning direction of energy by the scanning unit. A processing device characterized by being provided. 52. A processing device for selectively processing a processing region of a processing film formed on a substrate, comprising: a substrate holding part for holding the substrate; and a part of the processing film being selectively reduced or A radiation source that generates an energy ray to be removed, an energy ray that is arranged on the optical axis of the energy ray, shapes the energy ray generated by the radiation source, and the irradiation shape on the substrate is periodically arranged. And a scanning unit that scans the energy beam relative to the substrate at a period of the cycle or less. 53. The molding unit shapes the light from the light source so that the light of the same shape is periodically arrayed in the scanning direction on the substrate. Processing equipment. 54. The processing apparatus according to claim 51 or 52, wherein the molding section comprises a plurality of aperture masks each having an opening formed therein. 55. The forming unit comprises an aperture mask having slit-shaped or dot-shaped openings formed therein, and the scanning unit moves the aperture mask having the openings formed therein. 54. The processing device according to 54. 56. The light shaping section has a first aperture mask in which openings having a shape substantially similar to that of the processing region are formed, and a second aperture in which a plurality of openings having the same shape are periodically arranged. The processing apparatus according to claim 51 or 52, further comprising a mask. 57. The processing apparatus according to claim 56, wherein the scanning unit moves the second aperture mask. 58. The processing apparatus according to claim 51 or 52, further comprising an observation unit for observing the surface of the processing region of the substrate during processing. 59. The processing apparatus according to claim 58, further comprising an inspection section for recognizing a processing abnormality from a gradation change of an observation image observed by the observation system. 60. The distribution of the processing progress of the processed film is recognized from the observation image observed by the observation system, and the energy is calculated according to the recognized distribution of the processing progress of the processed film and the irradiation position. 59. The processing apparatus according to claim 58, further comprising an irradiation amount control unit that controls the irradiation amount of the line. 61. The processing apparatus according to claim 60, wherein the irradiation amount control unit continues the irradiation of energy rays while the processed film and the residue of the processed film are present. 62. The molding section is an optical element in which micromirrors that are small with respect to the intensity of the light and whose directions are controllable are arrayed, and the optical element of the optical element is arranged according to an irradiation shape on the substrate. The processing apparatus according to claim 51 or 52, further comprising a control unit that controls the orientation of each micromirror. 63. The processing apparatus according to claim 62, wherein the scanning unit controls the orientation of each micro mirror of the optical element according to processing time. 64. A liquid supply unit for continuously supplying the liquid to the surface of the processing region of the substrate while changing the flow direction of the liquid according to the scanning direction of the energy beam by the scanning unit. 53. The processing apparatus according to claim 52. 65. The liquid supply unit includes a holder on which a substrate disposed on the substrate holding unit is disposed, a first pipe connected to the holder, and the substrate is a first pipe. A second pipe connected to the holder so as to sandwich it, and the liquid is supplied from one pipe to the substrate arranged in the holder according to the scanning direction of light, and the other pipe supplies the liquid to the substrate. The liquid supply device which discharges the liquid supplied above is provided, The 51 or 6 characterized by the above-mentioned.
The processing device according to item 4. 66. The liquid supply unit has a discharge port for discharging a liquid, and a running water supply device provided with a discharge port provided so as to face the discharge port, and the running water supply device is provided within the substrate surface. The processing device according to claim 51 or 64, further comprising: a rotating unit that rotates the device. 67. The processing apparatus according to claim 51, further comprising a processed film forming unit for forming the processed film on the main surface of the substrate.