CN1877457A

CN1877457A - Processing method, manufacturing method of semiconductor device, and processing apparatus

Info

Publication number: CN1877457A
Application number: CNA2006100942554A
Authority: CN
Inventors: 竹石知之; 川野健二; 池上浩; 伊藤信一; 高桥理一郎
Original assignee: Toshiba Corp
Current assignee: Toshiba Corp
Priority date: 2002-05-14
Filing date: 2003-05-14
Publication date: 2006-12-13
Also published as: JP2003332215A

Abstract

A processing method for selectively reducing or removing the region to be exposed with energy ray in a film formed on a substrate, comprising relatively scanning a first exposure light whose shape on the substrate is smaller than the whole first region to be exposed against the whole first region to be exposed to selectively remove or reduce the first region to be exposed, and exposing a whole second region to be exposed inside the whole first region to be exposed with a second exposure light to selectively expose the whole second region to be exposed.

Description

The manufacture method of job operation, processing unit (plant) and semiconductor devices

Technical field

The present invention relates to optionally process the manufacture method of job operation, processing unit (plant) and the semiconductor devices of the processing of films that on substrate, forms.

Background technology

In general, along with the progress of the miniaturization of semiconductor element, the high precision int of the technique of alignment in photo-mask process and between the lower floor just becomes to requisite.Up to now exposure the time make position alignment between image that has formed on the substrate and the figure that will expose on time, all to carry out with the special-purpose viewer of the position of detecting alignment mark.But, in the method, be offset owing between special-purpose viewer of aligning and exposure axis, being certain to exist, so because the influence of thermal drift etc. will produce skew on aligning viewer and exposure axis, thereby will produce the alignment offset of alignment mark position.For this reason, along with the progress of the miniaturization of semiconductor devices, cause the problem of big influence can for the yield rate of chip with regard to the size of the alignment offset that produced aligned position.

For improving this problem, people are think with the mode of the ETTR (exposing by reticule) of coaxial detection and the exposure of carrying out alignment mark can be in next generation's technique of alignment likely.If use the ETTR mode, at the reverse side that can realize high-precision aligning, owing to use wavelength light source with the same DUV of exposure zone, pretend that generation is used in the light absorption that the antireflection film that forms in the photoresist lower floor carries out is big for problem, and can not detect problem from the positional information of the alignment mark of antireflection film lower floor.Equally, the interlayer dielectric that at the film that is forming on the alignment mark is organic insulating film or SiN, SiC etc. can not obtain the positional information of alignment mark under the opaque situation of exposure light.In addition, even if do not carry out under the situation of the aligning that carries out with ETTR, under the situation a little less than the contrast of alignment light, the positional information that can not obtain aiming at.

For this problem, people have proposed to adopt in the method for optionally removing above-mentioned film to the way of the opaque coating irradiating laser that forms before the alignment process on alignment mark.But if use this method, will produce such problem: the particle that produces when Laser Processing will be attached to become on the component graphics zone and be fatefulue defective.

As mentioned above, exist the particle that when optionally processing the processing of films of machining area, produces and be attached to the problem that becomes outside the machining area to the reason of defective.

Summary of the invention

(1) be a relevant example of the present invention, optionally remove the machining area of the processing of films that on substrate, forms or reduce the job operation of the processing of thickness, comprise: make the shot shape 1st processing light littler on above-mentioned substrate, above-mentioned substrate is relatively scanned operation with the processing of the processing of films of optionally carrying out above-mentioned machining area than above-mentioned machining area; With to shine the 2nd processing light than the more past area inside of above-mentioned machining area, optionally carry out operation than the processing of the above-mentioned processing of films of the more past area inside of above-mentioned machining area.

(2) job operation of a relevant example of the present invention comprises: the operation that forms the 1st film on substrate; On the 1st film, form the operation of the 2nd film; With optionally shine processing to substrate and use beam, when keeping above-mentioned the 2nd film, above-mentioned the 1st film is gasified, with a part of removing the 2nd film or make it to reduce the operation of the processing of thickness.

(3) a relevant example of the present invention, optionally process the processing unit (plant) of the machining area of the processing of films that on substrate, forms, it constitutes possesses: the retaining part that keeps above-mentioned substrate; Produce the electron gun of beam optionally reduce or to remove the part of above-mentioned processing of films, be configured on the optical axis of above-mentioned beam, be shaped with the shaped portion of the beam of above-mentioned light source generation; The sweep test that the beam that uses this shaped portion to be shaped relatively scans above-mentioned substrate; With the direction of scanning according to the beam that is undertaken by this sweep test, the limit changes the flow direction of liquid, the limit to the machining area surface of above-mentioned substrate continuously the liquid of feed fluid supply with part.

(4) a relevant example of the present invention, optionally process the processing unit (plant) of the machining area of the processing of films that on substrate, forms, it constitutes possesses: the retaining part that keeps above-mentioned substrate; Produce the electron gun of beam optionally reduce or to remove the part of above-mentioned processing of films, be configured on the optical axis of above-mentioned beam, be shaped, shine the shaped portion of the beam that the shot shape on the above-mentioned substrate arranges periodically with the beam of above-mentioned electron gun generation; The sweep test that above-mentioned beam was relatively scanned for substrate below the above-mentioned cycle.

(5) have be of the present invention, carry out beam is all shone in each process unit, with the machining area of optionally removing the processing of films that on substrate, forms or make it to reduce the job operation of the processing of thickness, it is characterized in that comprising: ask operation from the catoptrical intensity distributions of above-mentioned processing of films; Will be according to the decision of above-mentioned intensity of reflected light to the operation of the energy of the beam of each process unit's irradiation of the above-mentioned total area; With to above-mentioned each process unit, the operation of shining above-mentioned beam according to the irradiation energy that is determined successively.

(6) be relevant of the present invention, carry out beam is all shone in each process unit, with the machining area of optionally removing the processing of films that on substrate, forms or make it to reduce the job operation of the processing of thickness, it is characterized in that comprising: ask operation from the catoptrical intensity distributions of above-mentioned processing of films; According to picture information, intensity of reflected light is categorized into each the regional operation that equates substantially; Set the operation of process unit according to institute's classified regions; Will be according to intensity of reflected light decision to the operation of the energy of the beam of each process unit's irradiation; With to above-mentioned each process unit, the operation of shining above-mentioned beam according to the energy that is determined successively.

(7) relevant of the present invention, carry out beam is all shone in each process unit, with the machining area of optionally removing the processing of films that on substrate, forms or make it to reduce the job operation of the processing of thickness, it is characterized in that comprising: to the operation of process unit's irradiation beam of above-mentioned substrate; The operation of the gas that observation produces because of the irradiation of above-mentioned beam on the light path of above-mentioned beam; Measure above-mentioned gas size operation and under the size of the above-mentioned gas situation littler, to next the operation of beam of above-mentioned substrate illumination than setting.

(8) relevant of the present invention, to the machining area of liquid to the surface of substrate stream, carry out beam with the width W of the flow direction of oscillation frequency Z irradiation aforesaid liquid, optionally remove above-mentioned machining area or make it to reduce the job operation of the processing of thickness, it is characterized in that: the flow velocity V of aforesaid liquid (micron/sec), width W (micron) and oscillation frequency Z (1/sec) are set to satisfied:

V &GreaterEqual; 6 \times \sqrt{\frac{W}{2}} \times Z

(9) relevant of the present invention, optionally remove the job operation that the machining area of the organic membrane that forms or make it reduces the processing of thickness on substrate, it is characterized in that: in oscillation frequency is f (1/sec), and, the energy density of each pulse can be removed under the condition of above-mentioned organic membrane, the limit is radiated at the shot shape beam littler than above-mentioned machining area on the above-mentioned substrate, (micron/sec) relatively scans the irradiation position of above-mentioned beam with speed v to above-mentioned substrate on the limit, simultaneously, above-mentioned oscillation frequency f and speed v, satisfy following relation:

6.0 {\times 10}^{- 5} \leq \frac{v}{f^{2}} \leq 1.0 \times 10^{- 3}

(10) relevant of the present invention, optionally process the processing unit (plant) of the machining area of the processing of films that on substrate, forms, it is characterized in that possessing: the retaining part that keeps above-mentioned substrate; To being set in each process unit in the above-mentioned machining area, the illuminated portion of irradiation beam; Detect the test section of the intensity of reflected light of above-mentioned each process unit; According to the reflection strength that is detected, setting will be to the setting section of the energy of the beam of each process unit irradiation; With according to the energy of setting with this setting section, control is from the control of energy part of above-mentioned illuminated portion to the beam of each process unit's irradiation.

(11) relevant of the present invention, optionally process the processing unit (plant) of the machining area of the processing of films that on substrate, forms, it is characterized in that possessing: the retaining part that keeps above-mentioned substrate; The illuminated portion of beam of the part of above-mentioned processing of films is removed in generation; On the light path of above-mentioned beam, observe irradiation by means of above-mentioned beam, above-mentioned processing of films is denuded (abrasion) and the observation part of the gas that produces; With the observations according to this observation part, control is from the irradiation control section regularly of the above-mentioned beam of above-mentioned illuminated portion irradiation.

(12) relevant of the present invention, optionally process the processing unit (plant) of the machining area of the processing of films that on substrate, forms, it is characterized in that possessing: the retaining part that keeps above-mentioned substrate; To being set in each process unit in the above-mentioned machining area, irradiation oscillation frequency Z (1/sec), and the illuminated portion of the beam of the width W (micron) of a direction of the irradiation area in above-mentioned processing of films; On the machining area of above-mentioned processing of films, the supply part of the liquid that to supply with at an above-mentioned direction flow velocity be V; With make above-mentioned oscillation frequency Z, width W and flow velocity V satisfy

V &GreaterEqual; 6 \times \sqrt{\frac{W}{2}} \times Z

Relation like that, to any one control section controlled among above-mentioned oscillation frequency Z, width W and the flow velocity V.

(13) relevant of the present invention, optionally process the processing unit (plant) of the machining area of the organic membrane that on substrate, forms, it is characterized in that possessing: the retaining part that keeps above-mentioned substrate; To above-mentioned substrate, the shot shape that is radiated on the above-mentioned substrate is littler than above-mentioned machining area, and oscillation frequency is f (1/sec), and the energy density of each pulse can be removed the illuminated portion of the beam of above-mentioned organic membrane; (micron/sec) relatively scans the sweep test of the irradiation position of above-mentioned beam with speed v to above-mentioned substrate; With make above-mentioned oscillation frequency f and speed v, satisfy

6.0 \times 10^{- 5} \leq \frac{v}{f^{2}} \leq 1.0 \times 10^{- 3}

Relation like that, the control section that at least one side in above-mentioned illuminated portion and the sweep test is controlled.

Description of drawings

Figure 1A has illustrated the manufacturing process of the semiconductor devices of embodiment 1 to the sectional view of Fig. 1 G.

Fig. 2 shows the formation of the optical machining device of embodiment 1.

The summary that Fig. 3 shows light shape forming unit constitutes.

Fig. 4 shows the formation of the visual field initialization system of embodiment 1.

Fig. 5 A, 5B show the action example of visual field initialization system.

Fig. 6 shows the formation of the visual field initialization system of embodiment 1.

Fig. 7 shows the formation of a slit/initialization system of embodiment 1.

Fig. 8 shows the formation of a slit/initialization system of embodiment 1

Fig. 9 A shows the example of diaphragm of a slit/initialization system of embodiment 1 to the planimetric map of 9D.

The planimetric map of Figure 10 shows the example of diaphragm of a slit/initialization system of embodiment 1.

The planimetric map of Figure 11 shows the manufacturing process of the semiconductor devices of embodiment 1.

Figure 12 shows in the surface state of having removed the film back substrate with the method for embodiment 1.

Figure 13 shows in the surface state of having removed the film back substrate with existing method.

Figure 14 A, 14B show the manufacturing process of the semiconductor devices of embodiment 1.

Figure 15 A, 15B show the manufacturing process of the semiconductor devices of embodiment 2.

Figure 16 A, 16B show the manufacturing process of the semiconductor devices of embodiment 2.

Figure 17 A, 17B show the manufacturing process of the semiconductor devices of embodiment 3.

Figure 18 A, 18B show the manufacturing process of the semiconductor devices of embodiment 3.

Figure 19 A, 19B show the manufacturing process of the semiconductor devices of embodiment 4.

Figure 20 A, 20B show the manufacturing process of the semiconductor devices of embodiment 4.

Figure 21 shows the manufacturing process of the semiconductor devices of embodiment 5.

Figure 22 shows the manufacturing process of the semiconductor devices of embodiment 5.

The sectional view of Figure 23 A, 23B has illustrated the manufacturing process of the semiconductor devices of embodiment 6.

Figure 24 A has illustrated the manufacturing process of the semiconductor devices of embodiment 7 to the sectional view of 24C.

Figure 25 A shows the diaphragm in the S/D diaphragm system of will being loaded into of embodiment 8 to the planimetric map of 25C.

The sectional view of Figure 26 A, 26B has illustrated the manufacturing process of the semiconductor devices of embodiment 8.

The sectional view of Figure 27 A, 27B has illustrated the manufacturing process of the semiconductor devices of embodiment 9.

The sectional view of Figure 28 has illustrated the manufacturing process of the semiconductor devices of embodiment 9.

The sectional view of Figure 29 A, 29B has illustrated the manufacturing process of the semiconductor devices of embodiment 10.

The sectional view of Figure 30 A, 30B has illustrated the manufacturing process of the semiconductor devices of embodiment 11.

The sectional view of Figure 31 has illustrated the manufacturing process of the semiconductor devices of embodiment 12.

Figure 32 A has illustrated the manufacturing process of the semiconductor devices of embodiment 12 to the sectional view of 32C.

Figure 33 A has illustrated the manufacturing process of the semiconductor devices of embodiment 13 to the sectional view of 33C.

Figure 34 A has illustrated the manufacturing process of the semiconductor devices of embodiment 14 to the sectional view of 34F.

Figure 35 A has illustrated the manufacturing process of the semiconductor devices of embodiment 15 to the sectional view of 35D.

Figure 36 A has illustrated the manufacturing process of the semiconductor devices of embodiment 16 to the sectional view of 36C.

The summary that Figure 37 shows the processing part of embodiment 18 constitutes.

The planimetric map of Figure 38 A, 38B shows the machining state that uses processing part shown in Figure 37.

Figure 39 A, 39B show the formation of liquid feeder.

Figure 40 A is the sectional view of the underproof problem of aligning when being used for illustrating the metal line that forms Al etc. to 40C.

Figure 41 A has illustrated the manufacturing process of the semiconductor devices of embodiment of the present invention 19 to the sectional view of Figure 41 F.

Figure 42 A shows the light job operation of embodiment 20 to the planimetric map of 42E.

The sectional view of Figure 43 A, 43B has illustrated the manufacturing process of the semiconductor devices of embodiment 21.

The planimetric map of Figure 44 shows the irradiation area of the laser beam of 1 pulse.

The sectional view of Figure 45 A, 45B has illustrated the manufacturing process of the semiconductor devices of embodiment 22.

The planimetric map of Figure 46 shows the irradiated area of the laser beam of 1 pulse.

Figure 47 shows the formation of the laser processing device of embodiment 23.

Figure 48 shows the formation of the laser processing device of embodiment 23.

Figure 49 shows the example of the image that the CCD gamma camera with laser processing device obtains.

Figure 50 A has illustrated the example of the film structure of embodiment 23 to the sectional view of 50C.

Figure 51 shows the setting of the energy on each irradiation area that carries out with the job operation of embodiment 23.

Figure 52 shows the setting of the energy on each irradiation area that carries out with the job operation of embodiment 23.

The sectional view of Figure 53 has illustrated the formation with the semiconductor devices of the job operation formation of embodiment 23.

Figure 54 shows the setting of the energy on each irradiation area that carries out with existing job operation.

The sectional view of Figure 55 has illustrated the formation of the semiconductor devices that forms with existing job operation.

Figure 56 shows the example of image embodiment 25, that obtain with the CCD gamma camera of laser processing device.

Figure 57 A has illustrated the example of the film structure of embodiment 25 to the sectional view of 57C.

Figure 58 shows the setting of the energy on each irradiation area that carries out with the job operation of embodiment 25.

Figure 59 shows the formation of the laser processing device of embodiment 26.

Figure 60 shows the formation of the laser processing device of embodiment 26.

Figure 61 A shows to 61C and does not consider the light job operation of carrying out on bubble ground.

Figure 62 A, 62B show the light job operation of embodiment 27.

Figure 63 show consider under the situation that bubble is processed apart from the distance of machining area and the relation between the pin hole number.

Figure 64 A, 64B show the irradiation area shape of the laser beam in the light processing of embodiment 27.

Figure 65 A, 65B show the irradiation area shape of the laser beam under the situation of total processing.

Figure 66 A, 66B show the irradiation area shape of the laser beam in the light processing of embodiment 27.

Figure 67 shows the diameter of bubble and the relation of pin hole number.

Figure 68 shows the width W of irradiation area and adds relation between the bubble diameter φ that produces man-hour.

The sectional view of Figure 69 A, 69B has illustrated the light processing that the limit is carried out machining area generation air-flow limit in atmosphere.

The sectional view of Figure 70 A, 70B has illustrated the manufacturing process of the semiconductor devices of embodiment 28.

The sectional view of Figure 71 A, 71B has illustrated the manufacturing process of the semiconductor devices of embodiment 29.

The sectional view of Figure 72 A, 72B has illustrated the manufacturing process of the semiconductor devices of embodiment 30.

The sectional view of Figure 73 A, 73B has illustrated the manufacturing process of the semiconductor devices of embodiment 31.

Figure 74 A has illustrated the manufacturing process of the semiconductor devices of embodiment 32 to the sectional view of 74D.

The sectional view of Figure 75 A, 75B has illustrated the manufacturing process of the semiconductor devices of embodiment 33.

Figure 76 A has illustrated the manufacturing process of the semiconductor devices of embodiment 34 to the sectional view of 76F.

Figure 77 A has illustrated the manufacturing process of the semiconductor devices of embodiment 35 to the sectional view of 77H.

The sectional view of Figure 78 has illustrated the chip-shaped semiconductor devices on the chip of embodiment 36.

Figure 79 A has illustrated the manufacturing process of the semiconductor devices of embodiment 36 to the sectional view of 79H.

The planimetric map of Figure 80 A, 80B shows the relation of the machining area and the liquid stream of embodiment 37.

Figure 81 is to v/f ²Show at machining area and form the defective area of back in machining area.

The planimetric map of Figure 82 shows the shape of the irradiation area on the substrate of embodiment 38.

The performance plot of Figure 83 shows the particle total area of total prolongation of the opposite side of embodiment 38.

Figure 84 A shows the variation of the irradiation area of embodiment 38 to 84D.

Embodiment

Below referring to description of drawings embodiment of the present invention.

(embodiment 1)

Figure 1A has illustrated the manufacturing process of the semiconductor devices of embodiment 1 to the sectional view of Fig. 1 G.Shown in Figure 1A, preparing substrate 100.Substrate 100 is imbedded on the Semiconductor substrate 101 of Si etc. and is formed alignment mark 102.Form interlayer dielectric 104, make the wiring figure 103 that forms on Semiconductor substrate 101 is covered.Wiring figure 103 forms on device area, around device area, forms alignment mark 102.

Then, shown in Figure 1B, on interlayer dielectric 104, form the antireflection film 105 of thickness 100nm and the chemical amplifying type positive photoetching rubber film 106 of thickness 300nm successively.Antireflection film 105 is the films that form organic class material with whirl coating.Chemical amplifying type positive photoetching rubber film 106 is photoresists of ArF light (wavelength 193nm) usefulness.

Before carrying out the aligning that carries out with ETTR aligning method, must optionally remove antireflection film 105 and photoresist film 106 on the low alignment mark 102 of exposure light transmission rate.

Containing the zone of the alignment mark 102 that useful ETTR aligning method observes, for example is 100 microns * 200 microns.Therefore, remove the opaque coating in these 100 microns * 200 microns zone.

Secondly, the formation to the laser processing device of optionally removing antireflection film 105 on the alignment mark 102, photoresist film 106 describes.Fig. 2 shows the formation of the optical machining device of embodiment of the present invention 1.

Optical machining device 200 as shown in Figure 2, possesses laser optical system 210, observing system 220 and Laser Processing part 230.At first the formation to laser optical system 210 describes.

This laser optical system 210, the laser oscillator control module 212, control that possess laser oscillator 211, carries out the control of laser oscillator 211 produces the optical system 214, control of the laser beam 213 of vibration light shape forming unit 215 and the condenser lens 216 by the shape of the laser beam 213 after the optical system 214 from laser oscillator 211.

Laser beam 213 from laser oscillator 211 shines sees through each in optical system 214, light shape forming unit 215 and the condenser lens 216 successively, shines on the machined surface 100a that is arranged on the substrate 100 in the Laser Processing part 230.Between light shape forming unit 215 and condenser lens 216, insert observing system 220.

As laser oscillator 211, for example can use Q-Switch Nd-YAG laser oscillator.From the laser beam that this Q-Switch Nd-YAG laser oscillator sends, comprise first-harmonic (wavelength 1064nm), the 2nd higher hamonic wave (wavelength 532nm), the 3rd higher hamonic wave (wavelength 355nm), the 4th higher hamonic wave (wavelength 266nm).From these wavelength, the wavelength of selecting those films that can will be removed to absorb is to the laser beam of any wavelength of substrate 100 irradiations.

In addition, the pulse width of the laser beam 213 of shining from laser oscillator 211 is set at about 10nsec.In addition, the highest available 10kHz of the laser beam of laser oscillator 211 vibrates.The control of the vibration control of the laser beam 213 of this laser oscillator 211 etc., available laser oscillator control module 212 carries out.

From the laser beam 213 of laser oscillator 211 irradiation, by optical system 214 to 215 incidents of light shape forming unit.

Light shape forming unit 215 as shown in Figure 3, is used the visual field initialization system 250 that has formed the opening of setting the visual field and formed a slit/initialization system 260 these formations of getting thinner opening in whole visual field.Seen through the laser beam of carrying out overlapping part at opening that forms on the visual field initialization system 250 and the opening that on slit/initialization system 260, forms, irradiation on substrate 100.

Visual field initialization system 250, the shape of the laser beam of the direction vertical that be shaped with direction of scanning described later.In addition, slit, some initialization system 260, the shape of the laser beam of shaping direction of scanning.

The formation of visual field initialization system 250 is described with Fig. 4.Fig. 4 shows the formation of the field stop initialization system of embodiment 1.As shown in Figure 4, on field stop loading plate 251, for example be mounted with 4 field stop 252a to 252d.These can adopt with field stop selection mechanism 254 to make field stop load the way that plate 251 is rotated, and select field stop 252a any one in the 252d.

Load on the plate 251 in field stop, be provided with and make the field stop rotating mechanism 255 of field stop 252a to the 252d rotation.Field stop rotating mechanism 255 shown in Fig. 5 A, 5B, makes field stop 252 rotation and the corresponding angle θ 2 in pitch angle (θ 1) with the alignment mark of the substrate 100 of observing part 220 measurements just.

In addition, as the other embodiments of visual field initialization system, also can use the field stop system of blade of diaphragm formula shown in Figure 6.This field stop system to the 256d shading, sees through laser beam with 4 blade of diaphragm 256a on the zone that is fenced up to 256d by blade of diaphragm 256a, laser beam is shaped.If the diaphragm formula then can make the formation system shape of laser beam become to variable.

The formation of slit/initialization system 260 is described with Fig. 7, Fig. 8.Fig. 7, Fig. 8 show the slit of embodiment of the present invention 1, the formation of some initialization system.

As shown in Figure 7, on the 1st swivel plate 261, be provided with the 2nd swivel plate 262, on the 2nd swivel plate 262, be provided with the slit, the point slit that load diaphragm and load plate 263 (Fig. 8).Be provided with the 1st and the 2nd rotating mechanism 264,265 that makes the 1st swivel plate 261 and 262 rotations of the 2nd swivel plate respectively.

Slit/point slit loads plate 263, as shown in Figure 8, for example, is mounted with 4 diaphragm 266a to 266d.Employing makes the S/D diaphragm load the plate 263 mobile way of going forward side by side by means of the travel mechanism 267 that goes forward side by side, and selects S/D diaphragm 266a any one in the 266d.

Fig. 9 A shows 4 S/D diaphragm 266a to 266d to Fig. 9 B.Diaphragm 266a shown in Fig. 9 A, the laser beam of using visual field initialization system 250 to be shaped sees through with maintaining the original state substantially.Diaphragm 266b shown in Fig. 9 B then is configured as slot-shaped.Diaphragm 266c, 266d shown in Fig. 9 C, the D makes laser beam be configured as point-like.

Generating capacity at the gas that produces because of laser radiation is remarkable, laser beam is carried out situation that scattering etc. impacts processing to the irradiation of the gas that taken place under, can use slot-shaped, and its tendency be significant situation next can use cut apart slot-shaped.Under the little situation of above-mentioned influence, can use chequered with black and white grid.In addition, also can observe the machining status of processing of films in advance, within these diaphragms, only load 1.

In addition, be called slot-shaped shape here, the long side direction that refers to shot shape equates substantially with a side's of machining area limit, the shape that the width of the direction vertical with long side direction is shorter than the opposing party's of machining area limit.In addition, the shot shape of so-called some shape, 2 width of vertical direction that refer to shot shape are all than the short shape of width of the vertical direction of machining area.

In this S/D diaphragm initialization system, make substrate keep stationary state constant, it is mobile with the travel mechanism 267 that goes forward side by side diaphragm loading plate 263 to be gone forward side by side, and just can scan the machining area on the substrate.Moving at this moment is owing to only be about several microns, so also can make it to vibrate on the direction of going forward side by side with piezoelectric element.In addition, also can use in advance and the fixing slit of the same gimmick of the gimmick of using at existing exposure device, substrate and laser are relatively scanned.

By means of the 1st and the 2nd rotating mechanism 264,265, make diaphragm load plate 263 rotation and the corresponding angle θ 3 in pitch angle (θ 1) measurement with observing system 220 and alignment mark substrate 100 just, simultaneously, adjust the irradiation position of the laser beam that is shaped with visual field initialization system 250.Here the opening of the field stop of Shi Yonging is and machining area similar shapes substantially.Opening can adopt the way of aiming at machining area in the scope of one side of the shot shape on the substrate till 10 microns to 500 microns (10 microns * 10 microns to 500 microns * 500 microns) is made.In addition, slit/point slit as slit or some width W, uses w=2 to 10 micron diaphragm, and is a plurality of in step pitch p=2w making preparation in the scope of 100w, and carries out using after the sorting from wherein obtaining handling rate or particle generating capacity in advance.

In addition, as shown in figure 10, also can do to become and make and use the aperture plate of selecting to have formed slit or point with the same mechanism of visual field initialization system 250.

With Figure 10 illustrate S/D initialization system 260 other formation.Figure 10 shows the formation of the S/D initialization system of embodiment 1.As shown in figure 10, be mounted with a plurality ofly on the S/D diaphragm loads plate 267, for example 4 S/D diaphragm 266a as shown in Figure 9 are to 266d.These can adopt with S/D diaphragm selection mechanism 269 and make the S/D diaphragm load the way of plate 267 rotations, and 266a selects any one to 266d from the S/D diaphragm.

Load on the plate 267 at the S/D diaphragm, be provided with and make the S/D diaphragm rotating mechanism 268 of S/D diaphragm 266a to the 266d rotation.Diaphragm rotating mechanism 268 makes the S/D diaphragm 266 rotation corresponding angle θ 3 in pitch angle (θ 1) with alignment mark substrate 100 that measure with observing system 220 just.

Under the situation of using S/D initialization system shown in Figure 10, the result just becomes to make substrate 100 parallel moving to change the irradiation position on the substrate with driving mechanism 242.In addition, adopt reflecting plate that catoptron etc. is set and the way that changes the angle of reflecting plate between substrate and visual field initialization system, just can change the irradiation position on the substrate.

Resemble the optical image that is shaped with light shape forming unit 215 in this wise, see through observing system 220 and condenser lens 216, to the machined surface 100a of substrate 100 irradiation.Observing system 220 possesses from the half-mirror 221 of optical axis taking-up laser beam 213, observes the observation gamma camera 222 of the laser beam of taking out with this half-mirror 221.Observing system 220 is discerned the situation of the Working position on the substrate 100, irradiation position and processing by CCD gamma camera 222 as picture information.

With this observing system 220, just can carry out the aligning adjustment of laser beam irradiation position.In addition, in the process of laser beam irradiation, the state to processing carries out pattern recognition one by one, extracts machining area then from image out, and the carrying out of judging processing is to adjust exposure.For example, in the fast part of processing, reduce exposure, in processing slow part, strengthen exposure.Whether in addition, also will discern processing finishes.The identification of process finishing can adopt the way of the difference of measuring image to discern, and it is the control that stage of 0 finishes to wait processing that the result just becomes to carrying out also that difference at the image of machining area becomes substantially.

Observing system 220 has both the machining area of observing substrate 100 and the detection of particles mechanism that particle is counted.Detection of particles can adopt to calculate to be subjected within the reflection of light light with the CCD pixel, and the way of the pixel number of specific gray shade scale scope is obtained.In addition, can also use according to the pixel location information of being extracted out

1) under the situation of adjacency in length and breadth, just it is regarded as a piece decides the defective number,

2) in length and breadth, under the situation of oblique adjacency, also regard a piece as and decide the such algorithm of defective number to extract defective out.

Detection of particles mechanism, can compare number of defects that calculates and the minimum defective number of registering in advance, and carry out following control: surpass under the situation of minimum defective number in the defective number that is detected, just sending instruction makes continuation proceed to handle in desirable zone, under the situation that is lower than minimum defective number, then send the feasible machining area of instruction and move to next.

In addition, also to control, make, be substantially under 0 the situation measuring difference and difference, just stop at the processing at this part place, under really not so situation, just proceed processing at the front and back of laser radiation memory image.

Secondly, Laser Processing part 230 is described.Retainer 231, the shape such with the pallet that is equipped with the liquid bath of storing liquid 239 in peripheral part constitutes.As liquid 239, for example use pure water.

Middle body in the retainer 231 is provided with the mounting that can carry out substrate 100, the objective table 232 of maintenance.Substrate 100 is rotated by means of the rotating mechanism 233 that is connected on the objective table 232, the rotation of substrate 100, available sensors 235 and rotation control mechanism 234 control rotation angle.In addition, in the present embodiment, adopt rotation control mechanism 233 is connected on the driving mechanism 242, make retainer 231 in the horizontal direction with vertical direction on mobile way, change the irradiation position of laser beam.By means of rotating mechanism 233 and driving mechanism 242, just can make condenser lens 216 miniaturizations etc., make the laser-processing system miniaturization.

Retainer 231 also possesses the liquid that covers the machined surface that soaks substrate 100, to the transparent window 236 of laser beam.The result just becomes and is the laser beam of sending from laser oscillator 211 213, sees through this window 236, liquid 239 respectively to the machined surface 100a of substrate 100 irradiation.

In addition, also possess and make liquid 239 flowing liquids that are stored in the retainer 231 device 237 that flows.Basically is the liquid flow device 237 of pump, is connected on the retainer 231 by

pipeline

238a, 238b, makes liquid 239 circulate.In addition, also to do to become and make the direction that can flow to the control of the direction that relatively moves between substrate 100 and the laser beam.

In addition, in this device, also possess the piezoelectric element 240 on the back side that is provided in retainer 231 and control the piezoelectric element control circuit 241 of the driving of this piezoelectric element 240.Piezoelectric element 240, to substrate 100 be that the liquid 239 in the laser beam irradiation zone of machined surface 100a provides supersonic oscillations at least, and can remove the bubble that takes place owing to the irradiation of laser beam.

In addition, though in this device processing with light source use be LASER Light Source, be not limited to this.So long as the wavelength that processing of films absorbed has again and can carry out desirable processing, make processing that thickness reduces or that can remove the ability of striping what use can in other words with light source.For example, be organic membrane, inoranic membrane and having under the situation of absorption that adopt the way of using behind tungsten lamp or the Xe flashlamp optically focused, the thickness minimizing is firmly established at visible region or ultraviolet region.

Though this device is about the device of processing in the water, also can use in processing in the atmosphere of substrate, pressurized treatments, the reduced pressure treatment, retainer structure and processing are separately used with matching.

Secondly, the photoresist film 106 and the removing of antireflection film 105 of using this optical machining device 200 described.

Secondly, substrate is transported in the optical machining device shown in Figure 2 200.Adopt to detect the way at substrate breach and wafer edge, carry out the adjustment of aiming between laser beam axis and the substrate.In addition, according to the inclination of alignment mark 102, adjust the pitch angle of field stop and S/D diaphragm.

Secondly, the machining shape of the shape of the light that shine, the regulation that must remove is decided to be 200 microns of vertical 100 microns * horizontal strokes, makes laser beam be configured as desirable shape with light shape forming unit.In addition, in the present embodiment,, make the shape of laser beam be configured as a slot-shaped diaphragm of vertical 100 microns * horizontal 5 microns as the S/D diaphragm.

Secondly, shown in Fig. 1 C, make 237 actions of liquid flow device, make liquid 239 under the state that flows between window 236 and the substrate 100, laser beam is relatively scanned to remove processing of films substrate.

As the way that substrate and light are relatively scanned, optical axis that both can the fixed laser bundle uses driving mechanism 242, perhaps, also can adopt for example to make the S/D diaphragm load the plate 263 grades way of moving of going forward side by side with light shape forming unit to make it to scan.

The wavelength of laser beam is the wavelength that the antireflection film that can be used in photo-mask process absorbs.The energy density of per 1 pulse of being shone will be adjusted into and makes and can process and cause damage can not for the outer zone of machining area.This energy density, normally 0.1J/cm ²To 0.5J/cm ²

During laser radiation, owing to liquid 239 is arranged on illuminated portion, so in the machined surface 100a of substrate 100, just can seize the heat that produces because of laser beam irradiation.In addition, can also reduce the impetus of the evaporant that produces because of laser beam irradiation.

By means of window 236, the liquid 239 that is stored in the time of can preventing Laser Processing in the retainer 231 spreads water.In addition, by means of window, can also prevent that dust etc. is attached to substrate 101 lip-deep phenomenons from the top.

In other words, liquid flow device 237 makes the liquid 239 that is stored in the retainer 231, has such stream, make and to remove the bubble that on the irradiation position of laser beam, produces owing to laser beam irradiation continuously, in addition, liquid is circulated with constant speed on constant direction, make in laser, not produce irregular disorder.Liquid flow device 237 drives in the time of can carrying out Laser Processing at least actually.

The limit is shone laser beam on substrate 100, the limit makes S/D diaphragm loading plate 263 go forward side by side mobile.Employing makes the S/D diaphragm load the plate 263 mobile way of going forward side by side, and as shown in figure 11, the machining area 271 of the 272 pairs of substrates in laser beam irradiation district is moved, and just can remove the antireflection film 105 and the photoresist film 106 of the machining area of regulation.

In addition, adding the particle that produce man-hour by means of rayed, flowing to and be attached under the situation on the current, determining to be attached on one side of downstream by experiment.So, as the direction of scanning of irradiation area towards because processing towards scanning this side when can removing the particle that is taken place, so will further reduce the generation of particle with current are same.

Then, after having discharged the liquid 239 that is stored in the retainer 231, adopt the way that makes process substrate 100 high speed rotating, remove the water on surface haply.Then, again process substrate 100 being transported to the 2nd solvent removes in the device and heats.The heating-up temperature of substrate 100 is decided to be 200 ℃.Why carrying out the heating of substrate 100 here, is because will remove the attached water on photoresist film 106 surfaces, on whole of photoresist film the exposure environment is become and is same cause.Do not carrying out under the situation of this processing, with water part in succession in, the oxygen that produces in exposure just move to produce figure by means of a spot of water under residual in film defective.

Then, substrate 100 is transported in the exposure device, shown in Fig. 1 D,, carries out the detection of the alignment mark 102 of substrate 100 by means of the position alignment detecting device of use with the alignment light (the 1st beam) 107 of the identical wavelength of exposure wavelength.At this moment, owing to the antireflection film of having removed on the alignment mark 102 105, so can obtain good detection intensity.In addition,, do not remove under the situation of the antireflection film 105 on the alignment mark 102, just can not detect alignment mark 102 fully as prior art.

According to the positional information that obtains with the position alignment device, shown in Fig. 1 E,, on photoresist film 106, form the latent image of circuitous pattern to the exposed portion 106a irradiation exposure light (the 2nd beam) of photoresist film 106.After latent image forms operation, substrate 100 is transported to the PEB operation with in the heating arrangement, carry out the heat treated (PEB) of process substrate.Heat treated is implemented for the catalyst reaction of the oxygen that carries out employed photoresist (chemical amplification photo etching glue).

After this heat treated, shown in Fig. 1 F, carrying substrate 100 carries out the development of photoresist film 106, forms photoresist figure 109.The position alignment precision of formed photoresist figure 109, ± below the 5nm.

Then, shown in Fig. 1 G, be mask with photoresist figure 109, antireflection film 105 and interlayer dielectric 104 are passed through RIE method etching.

Figure 12 shows the substrate surface state under the situation of having removed antireflection film 105 and interlayer dielectric 104 with said method.In addition, Figure 13 shows in reference example total irradiation machining area and has removed substrate surface state under the situation of film.After Figure 12 shows and has removed film with the method for embodiment of the present invention 1, the surface state of substrate.Figure 13 shows after having removed film with existing method, the surface state of substrate.

Just as shown in Figure 13, removing by means of total irradiation under the situation of film, can have many particles that do not eliminate 284 at machining area periphery and inside as can be known.In addition, peel off 283 what the machining area periphery also can be created in the photoresist film that forms on the upper strata of antireflection film.

Removing under the situation of striping with the method for the present embodiment, with existing method ratio shown in Figure 13, peeling off of upper strata photoresist 281 is suppressed as can be known, subtracts attached to the number of the particle 282 in machining area periphery and the machining area is also sharp.In addition, in Figure 13, label 283 is peeling off of photoresist, and label 284 is particles.

The reason that this particle reduces below is described.Because the bubble that produces because of rayed when 1 time irradiated region field width will become also bigger than machining area, thus attached to the particle on this bubble will adhere to inside and outside the machining area many.

On the other hand, be fine into slot-shapedly shot shape is poly-, when substrate is relatively scanned, the bubble that takes place for 1 time just will reduce, bubble just be difficult to substrate in succession.For this reason, just be suppressed attached to the particle number on inside and outside the machining area.

Result to the bubble that is taken place is measured is carrying out under the situation of rayed processing the processing of films zone of regulation totally, and the bubble radius that is taken place is the R=120 micron.On the other hand.Be that bubble radius is the R=25 micron under 5 microns the situation of laser beam of seam shape at irradiating width.This side of the laser beam of shining seam shape, the size that compares bubble during with total irradiation has reduced.By this result as can be known, adopt the way make that the bubble radius that takes place reduces to control like that in 1 time abrasion, just can reduce adhering to of particle.

But even if use said method, it also is incomplete removing the inside and outside particle of machining area.In adhering to of the particle of alignment mark inside, can cause the increase of reading error when reading alignment mark, or the problem of read error etc.In addition, adhered in the alignment mark, particularly device area under the situation of particle, will bring out figure form defective, the problem of yield rate reduction etc.

Following, the method for the number of the particle on can suppressing to be attached to inside and outside the machining area is further specified.

At first, earlier the job operation of adhering to that prevents the particle in machining area is described.The device that in the removing of film, uses, with the device of explanation in embodiment 1 be same.

The sectional view of Figure 14 A, 14B has illustrated the manufacturing process of the semiconductor devices of embodiment of the present invention 1.

Shown in Figure 14 A, after the photoresist film and antireflection film on the machining area of having removed regulation (vertical 100 microns * horizontal 200 microns), make laser beam 110 be configured as slot-shaped (vertical 100 microns * horizontal 3 microns) thinner than the width of alignment mark, shine to the machining area of substrate.The limit makes laser (the 1st processing light) 110 ends from machining area scan to the other end, and denude on the limit.At this moment, just have a spot of particle 111 attached on the substrate surface.

Here, establishing oscillation frequency is that f, sweep velocity are v, if the slit of sweep length t, the overlapping irradiation frequency n that can carry out in 1 time scanning can be expressed as

N=tf/v (1) is f=250Hz establishing oscillation frequency in other words, and sweep velocity is under the situation of v=30 micron/sec, and under the situation of gap width t=3 micron, overlapping irradiation number of times will become to n=25 time.

When overlapping irradiation frequency n increases, the irradiation damage when substrate Si or mark or the various zones that form in the antireflection film lower floor of interlayer dielectric etc. are shone, just will become is easy to generation.On the other hand, the bubble that produces owing to the irradiation with 1 pulse will reduce, so will reduce the generation of particle.In other words, can be by means of the kind or the thickness of the film of the thickness of antireflection film or material or antireflection film lower floor, suitablely select overlapping irradiation number of times.Usually, n can select between 1 to 50.

In formula (1), if overlapping irradiation frequency n becomes to less than 1 time, then overlapping each other of irradiation area will not exist, and the result becomes the film that does not eliminate for existing between irradiation area.Residual film between this irradiation area can be peeled off when shining adjacent irradiation area, becomes to be fatal particle.In other words, n must be more than 1 at least.

Then, as shown in Figure 14B, laser beam (the 2nd processing light) 112 is scanned to an end from the other end.Then, the way that employing similarly makes the scanning of laser beam 112 back and forth carry out repeatedly just can be removed the particle that remains in the alignment mark.Here, in order to alleviate the influence of the heat that produces because of abrasion, in the liquid in being stored in retainer 231 239, carry out photoresist film.In addition, to make that in liquid flow device 237 not producing disorderly the sort of degree ground in laser beam circulates liquid 239 with constant flow velocity on constant direction, so that can remove continuously owing to laser radiation at the bubble of laser beam irradiation region generating.

In process, use the observing system 220 that constitutes by the CCD gamma camera, the particle inside and outside machining area is counted.And, at the front and back of laser radiation memory image, measure the difference of population, and control, make that becoming substantially in difference is the processing that just stops under 0 the situation in this part, just proceeds processing under really not so situation.

By means of above operation, confirmed to improve the alignment precision between base patterns and the exposure figure.

In the present embodiment,, be not limited to this though fully removed the processing of films on the alignment mark.For example, as long as can carry out the detection of alignment mark, finish processing under the state of also can the processing of films small amount of residual in machining area by means of the optical system of in to locating tab assembly, using.For example, even if the thickness of processing of films becomes to about half,, also can aim at though contrast is bad.

(embodiment 2)

In embodiment 1, to employing the shot shape of laser beam is become to slot-shaped, make laser beam relatively carry out the method that shuttle-scanning removes attached to the particle in the machining area and be illustrated machining area.

But, under the situation of this mode, the man-hour that adds of carrying out with rayed, owing to always the shot shape on substrate is fixed as the seam shape of constant area, make it shuttle-scanning in machining area, so under to the inadequate situation of the alignment precision of irradiation position and machining area, when carrying out shuttle-scanning repeatedly, owing to the skew of Working position, will produce the problem that new particle takes place from the boundary of machining area.In addition, this particle also can be adsorbed onto on the bubble surface that produces owing to rayed.This bubble can become to look very big, contacts with substrate surface, adheres to and become to particle.

Therefore, in the present embodiment, the boundary vicinity at the machining area of regulation is described, consider alignment precision, employing reduces the shot shape of the laser beam on substrate, is suppressed near the particle that produces the edge of machining area, prevents the method for adhering to of particle in machining area.

Figure 15 A, 15B, Figure 16 A, 16B show the manufacturing process of the semiconductor devices of embodiment of the present invention 2.In addition, at Figure 15 A, 15B, among Figure 16 A, the 16B, give same label and omit its explanation for the part that those and Figure 1B are same.Figure 15 A, Figure 16 are sectional views, and Figure 15 B, Figure 16 B are the planimetric maps of machining area.

In the 1st time scanning, as shown in figure 15, in the central authorities of machining area 121, adopt 120 pairs of substrates 100 of laser beam are relatively scanned, towards the way that the other end scans, remove the antireflection film 105 and the photoresist film 106 of machining area 121 from the end of machining area of regulation.In addition, the shot shape of label 122 expression laser beam 120.

As mentioned above, embodiment 1, if the alignment precision when carrying out shuttle-scanning under this state between the machining area of irradiation area and regulation is inadequate, then owing to the boundary irradiates light in the zone that processes to the 1st time, this border is processed, and particle will be attached in the machining area 121.

So, when the 2nd time scanning, shown in Figure 16 A, 16B, in laser beam 124 during near the border of machining area 121, consider alignment precision,, shot shape 125 is become to also littler than the shot shape 122 in the central portion office of machining area 121 by means of visual field initialization system 250.

By means of this, just can prevent the generation that the boundary vicinity at machining area 121 is produced by the influence of alignment error from the new particle beyond the machining area 121.And, adopting the way reduce the rayed area, the bubble 123 that bubble 126 that the boundary at machining area takes place is become take place than the central portion office at machining area is also little.In addition, also will reduce the amount of particle 111.Therefore, also can prevent to be adsorbed onto lip-deep particle 111 the adhering on substrate of bubble 126.

In process, use the observing system 220 that constitutes by the CCD gamma camera, the particle inside and outside the machining area is counted.Then, employing is controlled, and makes memory image before and after the laser radiation, and measuring that its difference becomes substantially in difference is the processing that just stops this part place under 0 the situation, under really not so situation, just proceed the way of processing, finish desirable processing.

By means of this method, just can be than further prevent adhering to of in machining area particle in the method described in the embodiment 1.

(embodiment 3)

In embodiment 2, having told about to adopt relatively scans laser beam and substrate, boundary vicinity at the machining area of stipulating considers that alignment precision ground reduces the way of the area of irradiation area, inhibition is from the generation of the new particle beyond the machining area of regulation, simultaneously, reduce the bubble that will produce, prevent to be adsorbed onto particle on the bubble surface to the method for adhering to of substrate surface.

In the present embodiment, tell about with the purpose same with embodiment 2, employing makes laser beam relatively scan substrate, carry out towards the other end from the end of machining area of regulation, at the irradiation position of laser beam during near the border of desirable machining area, reduce the way of relative sweep velocity, further improve alignment precision at the boundary vicinity of the machining area of stipulating, simultaneously, reduce the bubble diameter of generation in the unit interval, prevent the method for adhering to of particle in machining area.

Figure 17 A, 17B, Figure 18 A, 18B show the manufacturing process of the semiconductor devices of embodiment of the present invention 3.In addition, at Figure 17 A, 17B, among Figure 18 A, the 18B, give same label and omit its explanation for the part that those and Figure 1B are same.Figure 17 A, Figure 18 A are sectional views, and Figure 17 B, Figure 18 B are the planimetric maps of machining area.

After the 2nd scanning, during the middle body of the machining area 131 with laser beam 130 scanning laser beams during relatively (Figure 17 A, 17B) near the border of machining area of regulation, the sweep velocity of the laser beam that slow down 133 (Figure 18 A, 18B).The adjustment of the sweep velocity of laser beam is loaded the adjustment of the speed of going forward side by side of plate and is carried out by means of diaphragm.Label 132,134 is illustrated in the shot shape of the laser beam 130,133 on the substrate.

At the boundary of machining area 131, adopt the way of the sweep velocity of the laser beam that slows down, at the rayed area of boundary vicinity in the minimizing unit interval of machining area 131.For this reason,, make the lip-deep particle 111 that is adsorbed onto bubble 135 be difficult to contact substrate surface, thereby can prevent adhering at the inside and outside particle of machining area 131 with reducing the diameter of the bubble 135 in the unit interval, produce.

In process, use the observing system 220 that constitutes by the CCD gamma camera, the particle inside and outside machining area is counted.Then, at the front and back of laser radiation memory image, measure the difference of population, and control, make that becoming substantially in difference is the processing that just stops under 0 the situation in this part, under really not so situation, just proceed the way of processing, finish desirable processing.

Even if in atmosphere or in pressure-air, carry out under the situation of Laser Processing, also can confirm the effect of the present embodiment.

(embodiment 4)

In embodiment 1, to adopting the shot shape of laser beam is always gathered into the way that constant thin light scans in the machining area of regulation, the method for antireflection film or photoresist film of removing is told about.But, when laser carries out shuttle-scanning, consider between the machining area of laser beam and regulation, on alignment precision, can exist the situation of error to the direction of scanning.In this case, carry out shuttle-scanning repeatedly if use with the laser beam of the shot shape of shape, then can be because of being subjected to the influence of alignment error, light will shine the machining area outside.Consequently, when carrying out the shuttle-scanning of machining area, all can produce new particle, make and eliminate the particle difficulty that becomes fully.

So, in the present embodiment, consider alignment precision to the laser beam of machining area, reduce to do to become the long limit of slot-shaped shot shape gradually.

With Figure 19 A, 19B, Figure 20 A, 20B describe in more detail.Figure 19 A, 19B, Figure 20 A, 20B show the manufacturing process of the semiconductor devices of embodiment of the present invention 4.In addition, at Figure 19 A, 19B, among Figure 20 A, the 20B, give same label and omit its explanation for the part that those and Figure 1B are same.Figure 19 A, Figure 20 A are sectional views, and Figure 19 B, Figure 20 B are the planimetric maps of machining area.

Figure 19 A, 19B show the 1st time scanning mode.And Figure 20 A, 20B show the 2nd time scanning mode.As Figure 19 A, 19B, shown in Figure 20 A, the 20B, make the length of the long side direction of the shot shape 144 in the 2nd time the scanning of laser beam 143, shorter than the shot shape 142 of the laser beam 140 in the 1st scanning.

If resemble in this wise and carry out, even if then carry out shuttle-scanning repeatedly, light can not shine beyond the machining area yet.Consequently can be suppressed at the particle that takes place beyond the machining area, and prevent adhering to substrate surface.

(embodiment 5)

In embodiment 1, adopt the way that makes the photoscanning machining area that focuses on very carefully, removed antireflection film and photoresist film.But, if use this mode, under the situation of the alignment error that exists the direction of scanning between the machining area of the irradiation position of laser beam and regulation, if laser beam is the whole zone of the machining area of shuttle-scanning regulation always, then when carrying out shuttle-scanning repeatedly just to before this with the border in the zone of rayed processing on irradiates light, will be from the particle of the newborn volume of the part beyond the machining area.

So, in the present embodiment, consider the alignment precision of irradiation position of the laser beam of the direction of scanning of the machining area of regulation is all reduced the scope that laser beam scans gradually when increasing scanning times in machining area.

Describe in more detail with Figure 21, Figure 22.Figure 21, Figure 22 show the manufacturing process of the semiconductor devices of embodiment of the present invention 5.In addition, in Figure 21, Figure 22, give same label and omit its explanation for the part that those and Figure 1B are same.

Figure 21 shows the 1st time scanning mode.And Figure 22 shows the 2nd time scanning mode.As Figure 21, shown in Figure 22, make the sweep limit of the 2nd laser beam 151 in the scanning, narrower than the sweep limit of the laser beam 150 in the 1st scanning.

Carry out shuttle-scanning in this wise owing to resembling, even if owing to carry out shuttle-scanning repeatedly, light can be to machining area with external exposure yet, so just can suppress the particle that all will take place when carrying out shuttle-scanning repeatedly.The result can prevent adhering to of in machining area particle.

In process, use the observing system 220 that constitutes by the CCD gamma camera, the particle inside and outside machining area is counted.And, at the front and back of laser radiation memory image, measure the difference of population, and control, make that becoming substantially in difference is the processing that just stops under 0 the situation in this part, under really not so situation, just proceed the way of processing, finish desirable processing.

As mentioned above, up to now from embodiment 1 to embodiment till 5, all adopt and the shot shape of laser beam done to become long slot-shaped, the way that laser beam and substrate are relatively scanned is removed antireflection film and photoresist film.But the light shape is not limited to the slot-shaped of length, also can shine the light shape that is divided into point-like in the machining area, makes it to scan in the machining area to regulation.

(embodiment 6)

5, the way that employing makes the laser beam that is focused into the shot shape also littler than machining area carry out shuttle-scanning being carried out desirable processing,, tell about to remove the method that is attached to the particle in the machining area from embodiment 1 to embodiment.

But, this mode, owing in shuttle-scanning, want spended time, so can produce the problem that handling rate is reduced, in addition, owing to will shine the light of long seam shape,, be easy to produce the problem of damage so the influence that also can produce owing to feasible heat distortion such as the alignment marks that forms in antireflection film lower floor increases.

In the present embodiment, tell about when shortening the processing time method of the damage of the lower floor of inhibition alignment mark etc.

Figure 23 A, Figure 23 B show the manufacturing process of the semiconductor devices of embodiment of the present invention 6.In addition, in Figure 23 A, Figure 23 B, give same label and omit its explanation for the part that those and Figure 1B are same.

Shown in Figure 23 A, at first, similarly make shot shape on the substrate be configured as 160 pairs of substrates of slot-shaped laser beam and relatively scan, to remove antireflection film 105 and photoresist film 106 with the slot aperture system.Under this state, in machining area, exist particle 111.

Then, in the 2nd later irradiation, shown in Figure 23 B, only form, be radiated at the shot shape on the substrate and the laser beam 161 of machining area equal extent size, remove particle with the visual field initialization system.At this moment, also can consider alignment precision, make light can not do actual shot shape to become littler to the machining area external exposure like that than machining area.

Use this method, same with embodiment 2 to 5, also can prevent the adhering to of particle in the machining area.

In addition, here adopt at first to focus on light very carefully, the way that long slot-shaped light and substrate are relatively scanned is removed antireflection film and photoresist film.But the light shape that will shine is not limited to thin rectangular shape, also can shine the light shape that is divided into point-like in the machining area, makes it scanning in the machining area.

As mentioned above, in the 1st time processing, the limit makes long slot-shaped light scan the way that the limit processes at least, suppresses the generation of particle, in addition then, adopts the way to machining area internal radiation light, also can remove the particle in the machining area.Have again, adopt and use following way,, also can suppress adhering to of particle even if under the situation that will remove the film that more is easy to generate particle.

(embodiment 7)

Secondly, the method for removing of the particle outside machining area that disperses is told about.

Figure 24 A shows the manufacturing process of the semiconductor devices of embodiment of the present invention 7 to Figure 24 C.In addition,, in Figure 24 C, give same label and omit its explanation at Figure 24 A for the part that those and Figure 1B are same.

The present embodiment is carried out rayed under the state that substrate is dipped in the current.

Shown in Figure 24 A, till the 1st starting point M1 to the 1 boundary B 1 in the machining area laser beam 170 that is configured as seam shape is scanned.At this moment, the flow direction of the liquid that forms by means of the liquid flow device, become for the antiparallel substantially direction in direction of scanning.That is, the irradiation position of laser beam 170 is towards upstream one side shifting of liquid stream.Owing to can make particle flow with current, particle 111 will be attached in the machining area and downstream one side of current.

Then, shown in Figure 24 B, make laser beam 170, scan to the 2nd boundary B 2 from the 2nd starting point M2 between the 1st starting point M1 and the 1st boundary B 1.Reverse when at this moment, the liquid stream that makes the liquid 239 that is formed by liquid flow device 237 is with the 1st scanning and come.

Employing resembles and makes laser beam that the way that substrate scans is carried out the processing of machining area in this wise.In this state, have benefited from the liquid stream of the liquid 239 that forms by liquid flow device 237.Particle is stayed all in the machining area and can be present in outside the machining area.

Then, shown in Figure 24 C, adopt to make laser beam 171 scan the way that the limit is shone repeatedly, remove the particle that rests in the machining area at the machining area inner edge.

In addition, owing to adopt repeatedly the way of shuttle-scanning to prevent from the generation of the new particle in the border of the machining area of regulation, so just as shown in the last said embodiment, employing makes the variable way of visual field initialization system at the boundary vicinity of desirable machining area, reduce the shot shape of light, or reduce the way of sweep velocity, just can suit to select not have the best approach that particle adheres to.

In addition, just as shown in the embodiment 6, the shot shape that also can switch the sort of degree of machining area is to carry out the irradiation of total irradiation rather than slot-shaped light.

If with above method, then can obtain the machining shape that adheres to of no particle inside and outside the machining area of regulation.

In the embodiment formerly, beginning that from the machining area end light of seam shape is carried out under the scan condition, said can with always scan with the same direction of current.On the other hand, as the present embodiment, near machining area central authorities liquid, beginning to make laser to carry out under the scan condition, always making the side of laser, can further suppress adhering to of particle in the enterprising line scanning of direction opposite with the liquid stream of the liquid 239 that forms by liquid flow device 237.

(embodiment 8)

In the mode described in the embodiment 2 to 7, although can cut down the generating capacity of particle, because the area that can process for 1 time is little, process the time that whole machining area will expensively make it to scan, so the problem that handling rate is descended significantly generation.

So, in the present embodiment,, use the mask of the opening of the seam shape that disposes a plurality of slits, point slit system or point-like in order to shorten the processing time significantly, carry out the shaping of laser nip point.Figure 25 A shows the example of mask to 25C.Figure 25 A shows mask in the S/D diaphragm system that will be loaded into embodiment of the present invention 8 to the planimetric map of 25C.On mask 180a, the 180b shown in Figure 25 A, the 25B, a plurality of slot-shaped

opening

181a, 181b have been formed.The opening 181c of a plurality of point-like has been shown in the mask 180c shown in Figure 25 C in addition.

If be configured in the step pitch of the opening on the mask, 2 times of the length of the opening of not enough step pitch direction have then passed through the light diffraction each other behind the adjacent opening.Consequently, owing on substrate, shine coherent light, so will bring unusually to machining shape.

By means of this, when the distance of long limit till adjacent irradiation area along the machining area of stipulating shortened, the light that carries out diffraction will intricately be concerned with each other, and becoming no longer to make shot shape keep rectangle.

Therefore, be configured in the step pitch of a plurality of openings on the mask, it is desirable to more than 2 times of opening length (W) in the step pitch direction.To the light of incident on the substrate with the opening similar shapes that on mask, forms.Therefore, on substrate, be adjacent to the step pitch of the processing light that shines, we can say more than 2 times of length of direction of scanning of the shot shape of the processing light that it is desirable on the substrate.

Employing makes the step pitch that is adjacent to the processing light that shines with the direction of scanning on this substrate, and the way below 1/2 for the length of the above-mentioned machining area of above-mentioned direction of scanning just can shorten the processing time.

In addition, also relevant each other even if step pitch is 2W with glazing, shot shape can not be kept under the situation of rectangle, as long as set step pitch greatly.

In addition, make the step pitch that is adjacent to the processing light that shines with above-mentioned direction of scanning on above-mentioned substrate, it is desirable to be adjusted at the step pitch of the opening adjacent with the direction of scanning that forms on the mask, it is also big to make it the diameter that becomes than the bubble that is produced by the irradiation of processing light.If be adjacent to the step pitch of the processing light that shines with above-mentioned direction of scanning on above-mentioned substrate, below the diameter of the bubble that the irradiation because of processing light produces, the bubble that then is adjacent to produce will contact.Consequently, in laser beam, will produce irregular disorder, and make and carry out the correct processing difficulty that becomes.

Figure 26 A, Figure 26 B show the manufacturing process of the semiconductor devices of embodiment of the present invention 8.In Figure 26 A, Figure 26 B, give same label and omit its explanation for the part that those and Figure 1B are same.

Shown in Figure 26 A, 26B, make slot-shaped a plurality of laser beam 180,181 in machining area, carry out shuttle-scanning, carry out the processing of removing of antireflection film 105, photoresist film 106 and particle 111.

Processing, though the way that also can adopt fixing slit, point slit and substrate is moved, carry out the processing of the machining area implemented by relative scanning, still, then adopt stationary substrate here and way processing machining area that slit, point slit are moved.

Because the distance of the irradiation area of 1 laser beam scanning is little, so the needed time of machining area of processing regulation and the slit number that is disposed shorten inversely proportionally.

And, adopt the way that makes it back and forth to shine repeatedly, remove attached to the particle in the machining area.By means of this, the adhering to of particle that can prevent in machining area, can also shorten the processing time significantly.

In addition, here adopt to make slot-shaped a plurality of irradiation areas, remove antireflection film or photoresist film the way that substrate relatively scans.But the shape of irradiation area is not limited to slot-shaped shape, shown in Figure 25 C, also can dispose a plurality of light shapes that are divided into point-like, makes it carrying out shuttle-scanning in the machining area.

But, be configured under the situation of point-like, if a little less than the boundary light intensity of multiple spot irradiation area, doing that the multiple spot irradiation area scans processed if adopt, then on the long side direction of machining area, can form unprocessed zone.At this moment, when light is scanned, will be configured so that long limit a little is overlapping.Employing resembles the way that disposes a plurality of points in this wise, just can eliminate unprocessed zone, and, can carry out particle and can not be attached to processing on the processed substrate.

In the present embodiment, shown in Figure 26 A, 26B, though irradiates light shuttle-scanning ground is processed,, be not limited to this.Also can be by means of making laser beam 180,181 to any one scanning direction, be equivalent to the scanning of amount in 2 times cycle of the reciprocal time of in Figure 26 A, 26B, carrying out, carry out irradiation to machined surface with amount.At this moment, the length of the direction of scanning in the zone that has formed a plurality of slits that forms on slit, point slit it is desirable to be pre-formed scanning times into the regulation of the machining area of the direction of scanning length of the opening of field stop more than 1 times.Employing makes the length in the zone that has formed the slit form the way of scanning times more than 1 times at opening similar substantially on the machining area, just can carry out necessary number of times amount laser beam scanning and slit, point slit are stopped.Owing to slit, point slit are processed with stopping, that just can omit slit, point slit moves back and forth adjustment with laser beam etc., can realize the shorteningization of process time.

Therefore, it is desirable to dispose the step pitch of a plurality of openings on mask, measured step is apart from more than 2 times of length (W) of the opening of direction.With light incident on substrate in the opening similar shapes that forms on the mask.Therefore, on substrate, be adjacent to the step pitch of the processing light that shines, we can say more than 2 times of length of direction of scanning of the shot shape of the processing light that it is desirable on the substrate.

At this moment, consider alignment precision,, adopt the sweep velocity in many slits, irradiation energy or irradiated area on irradiation area are controlled at the boundary vicinity of machining area of regulation, make light can not shine the end way in addition of machining area, prevent the generation of particle.Concerning this method, can after the configuration of considering the slit, suit to select best method.

(embodiment 9)

In the present embodiment,, remove the method for the particle inside and outside machining area that will disperse simultaneously and tell about shortening the processing time.

The sectional view of Figure 27 A, 27B, Figure 28 has illustrated the manufacturing process of the semiconductor devices of embodiment of the present invention 9.The present embodiment is carried out rayed under the state that substrate is dipped in the current.

Shown in Figure 27 A, make many slits irradiation area R from shuttle-scanning between the 1st starting point to the 1 border.To change the direction of a stream of water according to the direction of scanning, so that make the direction of scanning different with water (flow) direction.Under this state, owing to can make particle flow with current, particle will be attached in the machining area and downstream one side of current.

Starting point will be set in this wise: making interval between the machining area end of direction of scanning one side of starting point and the 1st time becomes more than the width of many slits irradiation area R.If above-mentioned interval below the width of many slits irradiation area R, then will process outward machining area.

Then, shown in Figure 27 B, from the 2nd starting point to border 1 other end (border 2) in opposite directions of machining area of regulation, make many slits irradiation area R carry out shuttle-scanning.And make the direction of direction and current of scanning different like that (direction of current with towards the side on the 1st border in the opposite direction) from the 1st starting point, and according to the direction of scanning, the direction of change current.Even if under this state because particle can be taken away by current, so particle adhere to that to stay machining area all interior and can not exist outside machining area.

Then, as shown in figure 28, the laser beam 190 of the size of irradiation and machining area equal extent.By means of the irradiation of laser beam 190, just can remove those shuttle-scannings and not eliminate the particle of staying in the machining area fully with many slits irradiation area R.

In the present embodiment, the way that moves with focus reduces the change of the 2nd later light-struck irradiation area, but is not limited to this.For example, also can make the imaging optical system 216 of Fig. 2 have the varifocal function, make the 2nd later multiplying power reduce a little to shine after some.

If with above method, owing to the many slits of use, thus can shorten the processing time significantly, and, can obtain the machining shape that inside and outside machining area, does not have particle to adhere to.

(embodiment 10)

Figure 29 A, Figure 29 B show the manufacturing process of the semiconductor devices of embodiment of the present invention 10.In addition, in Figure 29 A, Figure 29 B, give same label and omit its explanation for the part that those and Figure 1B are same.Specifically, add pressure controller for liquid flow device shown in Figure 2, the pressure of round-robin liquid is being carried out in control.

Shown in Figure 29 A, 29B, adding under the state of 10 pressure by air pressure to substrate, make to be configured as slot-shaped laser beam 300,301 and relatively to carry out shuttle-scanning for substrate.By means of the shuttle-scanning of laser, carry out the processing of machining area, remove antireflection film 105 and photoresist film 106.

Consequently, with under normal pressure with same implementation method carry out desirable processing as a result than, can reduce the bubble diameter that when rayed, produces, can reduce significantly will be attached to the particle number inside and outside the machining area.

In addition, in the present embodiment, also same with other above-mentioned embodiment, consider alignment precision with the regulation machining area of relative laser beam irradiation position, and produced new particle by rayed for the border that prevents machining area, area at the boundary shot shape of machining area is reduced, or the relative scanning speed of laser beam and substrate is reduced.About this method, can suitably select to make adhering to of particle to be few best approach.

(embodiment 11)

In the present embodiment, tell about such method: to substrate, consider the position alignment precision of the machining area of the irradiation position of laser and regulation, when the 2nd later rayed, reduce the shot shape of laser beam.

In the present embodiment, tell about the focal position that adopt to change imaging on the machining area on the substrate, the area of control irradiation area prevents that particle that the boundary vicinity at machining area takes place is attached to the method in the machining area.

At first, shown in Figure 30 A, same with embodiment up to now, employing makes the 1st processing light 311 that focuses on carefullyyer than the machining area of regulation to the shot shape on the substrate, to the way that substrate relatively scans, remove the antireflection film 105 and the photoresist film 106 of the machining area of regulation.

But, at this moment, to set in this wise: make the distance between optical system and the substrate 100 leave a distance intentionally, distribute wide and do not make it to become on the antireflection film 105 of processing object and carry out imaging at antireflection film 105 glazings so that make.

For this reason, zone that in fact can irradiates light on antireflection film will become bigger than the zone that focuses on the visual field initialization system.On the other hand, irradiation energy density then weakens along with the expansion of light.Therefore, suit irradiation energy is controlled, make that the zone that those have the necessary light intensity of processing can not become to below the desirable size in the light after disperseing expansion.

To set in this wise: make optical system wittingly and the distance handled between the substrate is left a distance, widen and do not make it becoming on the antireflection film 105 of processing object and carry out imaging so that make to distribute at the antireflection film glazing.At this moment, make and handle substrate and leave the condition of a distance D, set in this wise from image spaces:

(1) distance D is different with pinpointed focus at least.

(2) in the irradiation position of establishing the laser beam that is produced by alignment error etc. and the side-play amount between the substrate, or process spacious and comfortable amount when being Δ, distance D satisfies following formula

D＞{Δ×(1-NA ²) ^1/2}/NA

NA is the aperture number of the optical system of condenser lens etc.

According to the irradiation position and the alignment precision between the processed substrate of the laser beam that satisfies above-mentioned condition or contain the error of influence of producing because of shaking of the liquid film on the processed substrate etc., suitable selection is not to the D of the best of the border of machining area irradiates light.

Then, shown in Figure 30 B, 312 pairs of substrates of the 2nd processing light are relatively scanned.Before the 2nd later irradiation, optical system and the distance setting of handling substrate in the past to image spaces.Set by means of this, just can make the 2nd later scanning area become narrower in fact than the 1st time scanning area.Just can be suppressed at the generation of machining area boundary particle by means of this.

(embodiment 12)

In the present embodiment, to the antireflection film that removes sub-cloud or make it to reduce thickness and the method that need not remove the photoresist film on upper strata is told about.

The light source that makes it to shine, the pulse laser of the 3rd higher hamonic wave (wavelength 355nm) of use Q-Switch Nd-YAG laser.The energy density of 1 pulse of being shone is generally 0.03J/cm ²To 0.15J/cm ²This energy density is littler than the energy density under the situation of removing this two side of photoresist film and antireflection film.Energy density will be set aptly by means of the abrasion of antireflection film, makes the photoresist film on upper strata not be destroyed.

Figure 31 shows the section when machining area shines the laser beam of the shot shape with size identical substantially with the shape of machining area.The sectional view of Figure 31 has illustrated the manufacturing process of the semiconductor devices of embodiment of the present invention 12.In Figure 31,, give same label and omit its detailed explanation for those and the same part of Figure 1B.

As shown in figure 31, remove the antireflection film 105 of lower floor as can be known and do not destroyed the photoresist film 106 on top.In addition, on photoresist film 106, do not observe adhering to of particle.

This is considered to respect under the situation of removing of carrying out with existing laser abrasion, irradiates light will be through photoresist film, produce abrasion (outburst) at the antireflection film place, the flying of photoresist film and antireflection film is attached to be removed near the zone, and exposure is being reduced to 0.03J/cm ²Situation under, the outburst that just can not produce instantaneity.Consequently, the gas that produces owing to antireflection film is shone has just been taken out from the photoresist film of porous.

As mentioned above, adopt than what existing abrasion was carried out and remove the way that lower energy shines, just can only make antireflection film 105 gasifications, eliminate in the generation of removing the particle that portion's periphery locates.

But,, in antireflection film 105, in machining area, mix existing zone that has been removed and the zone that is not eliminated owing to being subjected to photodistributed influence.The result is as the present embodiment, gasifies like that at leisure at the feasible photoresist film that does not destroy the upper strata and removes under the situation of antireflection film, shows to be subjected to photodistributed influence significantly.

In order to address this problem, adopting and making shot shape is the way that slot-shaped laser beam scans, and removes the antireflection film of machining area.

Figure 32 A shows its result to 32C.Figure 32 A has illustrated the manufacturing process of the semiconductor devices of embodiment of the present invention 12 to the sectional view of 32C., in 32C,, give same label and omit its detailed explanation at Figure 32 A for those and the same part of Figure 1B.

Figure 32 A shows and makes laser beam carry out the state after the scanning 1 time.In addition, Figure 32 B shows and makes laser beam carry out the state after the scanning 2 times.Have, Figure 32 C shows and makes laser beam carry out the state after the scanning 3 times again.

Shown in Figure 32 C, adopt the way of the scanning times that increases laser beam as can be known, just can remove antireflection film more equably

Can do such conclusion: adopt the way of using above method, just can not destroy the photoresist film on top equably except that the sub-cloud antireflection film.

In the present embodiment,, also can shine the light of the light absorbing wavelength of antireflection film of KrF Excimer lamp etc. though what use as irradiates light is laser beam.In addition, this time be as light illuminating method, though what use is in the method shown in the embodiment 1, and, the suitable method of selecting no particle to adhere to of method that also can above said any one embodiment in addition.

In addition, in the present embodiment,,, be not limited thereto though use is the pulse laser of the 3rd higher hamonic wave of Q-Switch Nd-YAG laser as the light source of the light that makes it to shine.So long as it is bigger than the photoresist film of layer formation thereon to satisfy the absorption coefficient of antireflection film, say the laser of the wavelength that satisfies the condition more than 2 times that becomes ideally, also can use the pulse laser of the 4th higher hamonic wave (wavelength 266nm), KrF excimer laser etc. of Q-Switch Nd-YAG laser.

In addition, in the present embodiment, though the close 0.03J/cm of being decided to be of energy of 1 pulse of being shone ²To 0.15J/cm ², still, be not limited thereto.Importantly to make parameter optimization, so that as the photoresist film of upper layer film bumping not.

In addition, shot shape also is not limited to long slot-shaped, can suit to select point-like or dispose a plurality of these shapes.

In addition, in the present embodiment, though the exposure during the removing of antireflection film is decided to be 0.03J/cm ², but be not limited thereto.Also can shine and only can remove the exposure that antireflection film forms hole region.In addition,, make antireflection film be thinned to the sort of degree of the thickness that can detect alignment light, rather than remove whole antireflection films, also can obtain same effect even if further reduce exposure.

(embodiment 13)

Below, the limit describes the situation of only optionally removing the antireflection film that forms on alignment mark referring to the accompanying drawing limit.The present embodiment is applicable to the situation that has graph copying film (intermediate coat) between photoresist film and antireflection film.As for the details of processed substrate,,, begin to describe from the method that forms the photoresist figure at processed substrate so here omitted owing to repeat with embodiment 1.

Figure 33 A has illustrated the manufacturing process of the semiconductor devices of embodiment of the present invention 13 to the sectional view of Figure 33 C., in Figure 33 C,, give same label and omit its detailed explanation at Figure 33 A for those and the same part of Figure 1B.

At first, shown in Figure 33 A, on interlayer dielectric 104, form the antireflection film 321 of thickness 300nm with whirl coating.As antireflection film 321, use the antireflection film of the organic class material that contains carbon particle here.Secondly, on antireflection film 321, form silicon oxide film 332 with whirl coating with the thickness of 80nm as the graph copying film.

This substrate is transported in the laser irradiation device shown in Figure 2.Then, be used in the method described in the said embodiment, only remove the antireflection film on the zone of containing alignment mark 102 and position alignment check mark (not drawing).Below (Figure 33 B), its details is described.In the present embodiment, be irradiates light with the 4th higher hamonic wave (wavelength 266nm) of Nd-YAG laser, the exposure condition is decided to be 0.025J/cm ²Here, the exposure condition, same with embodiment 12, be decided to be the empty state of only having removed antireflection film.In this case, removing near the zone, do not observe adhering to of particle fully.

This is considered to because exposure is being decided to be 0.025J/cm ²Under so little situation, different with the abrasion of existing laser, the gas that takes place by means of laser radiation, outburst that can moment property owing to pass intermediate coat is not so can produce the cause of dispersing in middle layer.

As mentioned above, adopt than what existing abrasion was carried out and remove the way that also low exposure is shone, just can only make the antireflection film gasification, elimination is in the generation of the particle of removing the part periphery.

Then, shown in Figure 33 C, form the chemical amplifying type positive photoetching rubber film 323 of ArF light (wavelength 193nm) usefulness of thickness 300nm with method of spin coating.And then, being transported to this processed substrate with the ArF excimer laser is in the stepping repetition type reduced projection exposure device of light source, after with the aligning of ETTR mode the figure that will expose and processed substrate having been carried out aiming at, in processed substrate, carry out the exposure of desirable figure.Then, after having carried out being referred to as the thermal treatment of PEB (exposure back post bake), develop, form desirable photoresist figure with alkaline-based developer.

As mentioned above, the way that adopts no particle ground only to remove antireflection film just can realize high-precision aligning and can not make the yield rate deterioration.

In the present embodiment, the light source when removing as antireflection film though use is the 4th higher hamonic wave of Nd-YAG laser, is not limited to this, it is desirable to select light source according to the optical constant of the film that will remove.

In addition, in the present embodiment, though the exposure during the removing of antireflection film is decided to be 0.025J/cm ², but be not limited thereto.Also can shine and only can remove the exposure that antireflection film forms hole region.In addition,, make antireflection film be thinned to the sort of degree of the thickness that can detect alignment light, rather than remove whole antireflection films, also can obtain same effect even if further reduce exposure.

In addition, after position aim detecting mark is carried out position alignment, can confirm that precision is aimed at well.Prior art, because antireflection film is also arranged on the position alignment check mark, the precision of checking is bad.

(embodiment 14)

In last said embodiment, in ETTR aims at, the method for removing antireflection film at least by means of rayed that can use in photo-mask process is told about.

On the other hand, in semiconductor devices, also be formed with polyimide film, Si polycrystalline film, organic interlayer dielectric, silicon nitride film, silicon carbonized film etc. can in photo-mask process, use to the opaque film of exposure wavelength.When on alignment mark, being formed with these opaque films, will producing and to carry out the problem that ETTR aims at.

In the present embodiment, the method for removing of these opaque coatings is described.

Figure 34 A has illustrated the manufacturing process of the semiconductor devices of embodiment of the present invention 14 to the sectional view of Figure 34 F.

Shown in Figure 34 A, prepare to make the semiconductor devices 400 in the way.On Si substrate 401, be formed with by SiO ₂The alignment mark 402 and the element isolating insulating film 403 that constitute.On Si substrate 401 and alignment mark 402, be formed with the interlayer dielectric 406 that constitutes by organism.On the component graphics zone of Si substrate 401, be formed with the semiconductor element 404 of a plurality of transistors or electric capacity etc.In this device, because the interlayer dielectric 406 that forms with organism will absorb exposure wavelength, so, just can not carry out ETTR and aim at if only remove antireflection film.Have, label 405 is a gate insulating film again.

In the present embodiment, shown in Figure 34 B, on interlayer dielectric 406, form antireflection film 407.Then, shown in Figure 34 C, remove antireflection film 407 and interlayer dielectric 406 with rayed.As light illuminating method, the method that the no particle of selection that suit from any one method shown in the last said embodiment adheres to.

Then, shown in Figure 34 D, coating forms photoresist film 408 on whole.Under the state shown in Figure 34 D, owing on alignment mark 402, do not form the film that absorbs exposure light fully, so can observe alignment mark with exposure wavelength.

In other words, can carry out ETTR and aim at, can aim at, shown in Figure 34 E, can carry out graphically photoresist with high precision.

Then, shown in Figure 34 F, be mask with patterned photoresist film 408, carry out the graphical of interlayer dielectric 406, just can form accurately and pass through the hole.Then, remove photoresist film 408 and antireflection film 407.

(embodiment 15)

On the Cu wiring figure that forms on the semiconductor devices,, be formed with silicon nitride film or silicon carbonized film in order to suppress the diffusion of Cu in interlayer dielectric.These films owing to can absorb the light of exposure wavelength, can not carry out the such problem of ETTR aligning so can produce.

Figure 35 A has illustrated the manufacturing process of the semiconductor devices of embodiment of the present invention 15 to the sectional view of 35D.

At first, shown in Figure 35 A, prepare to make the semiconductor devices 500 in the way.In this semiconductor devices 500, on Si substrate 501, be formed with the 1st interlayer dielectric 502 that constitutes by SiC.In the 1st interlayer dielectric 502, imbed and form alignment mark 503 and Cu wiring 504.In alignment mark 503 and Cu wiring 504, be formed with silicon nitride film 505.On silicon nitride film, be formed with the 2nd interlayer dielectric 506.

Then, shown in Figure 35 B, coating forms the antireflection film 507 that is made of organic material on the 2nd interlayer dielectric 506.Then, remove antireflection film the 507, the 2nd interlayer dielectric 506 and silicon nitride film 505 by means of rayed.

Then, shown in Figure 35 C, after having formed photoresist film 508, adopt ETTR to aim at the way of carrying out high precision alignment, form the photoresist figure 508 that wiring trench forms.

Then, shown in Figure 35 D, in whole the 2nd interlayer dielectric 506, form wiring trench by means of the RIE operation.Then, remove photoresist film 508 and antireflection film 507.

As mentioned above, owing to using smooth job operation of the present invention,, can form figure with high precision so can carry out the photo-mask process aimed at by means of ETTR.

(embodiment 16)

On semiconductor devices, forming the photosensitive polyimide film, carry out under the patterned situation with photo-mask process, also can use smooth job operation of the present invention.

Particularly photosensitive polyimide exists not only exposure wavelength, and wavelength of visible light light also absorbs, and is difficult to observe the problem of the mark that forms in lower floor.In addition, be under the situation of step cutting pattern at the mark that forms in the lower floor, will worsen owing to the inhomogeneity alignment precision of the thickness of the polyimide film on mark, it is defective to produce a plurality of alignings.

Figure 36 A has illustrated the manufacturing process of the semiconductor devices of embodiment of the present invention 16 to the sectional view of 36C.

At first, shown in Figure 36 A, prepare to make the semiconductor devices 600 in the way.In this semiconductor devices 600, on Si substrate 601, form the 1st interlayer dielectric 602.On the 1st interlayer dielectric 602, form alignment mark 603 and Al pad 604.On the 1st interlayer dielectric 602, being situated between forms photosensitive polyimide film 606 by the 2nd interlayer dielectric 605 ground, makes alignment mark 603 and Al pad 604 are covered.

Shown in Figure 36 B, remove photosensitive polyimide film 606 on the alignment mark 603 with the light job operation.

Then, shown in Figure 36 C, if aim at, can observe with high precision, aim at defective will swash subtract.Figure 36 C shows with photo-mask process and makes photosensitive polyimide graphical, then, and the shape after with the RIE operation dielectric film on the Al pad being processed.

As mentioned above, light of the present invention processing not only to the removing of photoresist film or its antireflection film, also can be used all films that form on the mark of semiconductor devices.

(embodiment 17)

In the present embodiment, show the other example of the light shape forming unit of optical machining device shown in Figure 2.

For example also can not use the opening mask, and it is in the extreme little a plurality of diameter ratios with laser beam to replace use, tie up the optical element (for example, Digital Micromirror Device (registered trademark of TIX)) of lining up towards variable respectively a plurality of tiny mirror 2.Optical element, adopt each tiny mirror of control towards way, just can form the optical image of big or small arbitrarily and shape.Therefore, adopt way, just can shine with the big or small of mark with towards the laser beam of corresponding optical image towards control to each tiny mirror that constitutes this optical element.

In other words, imagination makes it to see through field stop system and S/D diaphragm system, as

Highlights branch+highlights branch → highlights branch

Part → dark-part outside above-mentioned

Produce the bright dark-part gridding information on the mask face.

Grid it is desirable to refined net, for example, in narrow down to 1/20 system with projection optical system, then is being subdivided into (tiny mirror of this size of 2 dimension configurations) about 5 microns on the opening mask.This bright dark-part gridding information is offered optical element, make and on substrate, only divide irradiates light like that, control the angle of each tiny mirror, illuminating laser beam on substrate highlights.

In addition, if use this optical system, then can make substrate keep the static scanning of carrying out laser beam unchangeably.Can adopt the scanning of imagination laser beam, and all calculate bright dark-part gridding information in each process time, the way that offers optical element in the process time of correspondence is controlled.In this case, just can only process with optical element.

(embodiment 18)

In the present embodiment, show in optical machining device shown in Figure 2, have the other example of processing part from the mechanism of current to machining area that supply with.

The summary that Figure 37 shows the processing part of embodiment of the present invention 18 constitutes.In addition, in Figure 37,, give same label and omit its detailed explanation for those and the same part of Fig. 2.

Flow promoter system is in this case carried liquid 239 and is not used the circulation system to flow direction transducer 703 by feed tube for liquid 702 from liquid feeder 701.Constituting on substrate main surface of flow direction transducer 703 can be rotated the Z-axis of this interarea.On an end of flow direction transducer 703, the liquid attractant conduit 704 that couples together with feed tube for liquid 702 is set, in addition, also from the discharge opening 705 of its front end to substrate 100 interarea feed fluids.Liquid 239 passes through between substrate 100 and window 236, discharges by being positioned at discharge opening 705 locational escape hole 706 in opposite directions.Escape hole 706 has been widened the liquid of supplying with to substrate 100 from discharge opening 705 239 and has not been produced the sort of degree of sinuous flow.Flow direction transducer 703 be controlled as make change discharge opening 705 and escape hole 706 towards be the pre-set flow direction so that become for liquid the relative direction of scanning of substrate 100 and laser beam.

This processing part, for example, can use in such processing: the limit makes laser beam relatively scan the limit from interior side direction one side of desirable machining area and processes, at one end stop processing, then, the limit makes laser beam scan limit towards other end ground to machining area from the machining area inboard to process.In other words, work in-process for example, can resemble Figure 38 A, the 38B and carry out under the situation that produces current on the direction opposite with the relative direction of scanning of laser beam.

The planimetric map of Figure 38 A, 38B shows the machining state that uses processing part shown in Figure 37.In addition, in Figure 38 A, 38B,, give same label and omit its detailed explanation for those and the same position of Figure 37.

Shown in Figure 38 A, under the situation that the moving direction of irradiation area 712 moves left from paper dextrad, to be configured left hand one side that makes the discharge opening 705 of flow direction transducer 703 come machining area 711 in this wise, make escape hole 706 come the right hand one side of machining area, form current.In addition, under the situation that the moving direction of irradiation area 712 moves right from the paper left-hand, then shown in Figure 38 B, be configured so that by means of flow direction transducer 703 or substrate 100 Rotate 180 degree relatively around machining area 712, the right hand one side that makes the discharge opening 705 of flow direction transducer 703 come machining area 711, make escape hole 706 come left hand one side of machining area 711, form current.

Figure 39 A, 39B are configured so that the reciprocal liquid feeder of nozzle location to the liquid feeder shown in Figure 37,38A and the 38B.In this case, adopt only to make the liquid feed mechanism mobile way of in machining area, on the direction of together advancing with water (flow) direction, going forward side by side, just can easily change water (flow) direction.Irradiation area is relatively scanned from interior side direction paper left hand one side of machining area under the situation that the limit processes, will resemble shown in Figure 39 A dispose, then, make irradiation area relatively scan the limit towards the paper right hand one side on the limit and add man-hour, do to become Figure 39 B and get final product like that from the inboard.

(embodiment 19)

Figure 40 A is the sectional view that is used for illustrating the underproof problem of aligning when forming metal line such as Al to 40C.

Sectional view shown in Figure 40 A illustrated stage of forming before the Al wiring, on the superficial layer of the interlayer dielectric 802 that forms on the Semiconductor substrate 801, to form the alignment mark 806 that passes through hole 805 and aim at that will be connected at least with the Al wiring that will form later on.In addition, label 803,804 is contact pin, lower-layer wiring layer.In addition, there, on the surface of alignment mark 806, also form concavo-convex.Its reason will be told about in the back.

Secondly, shown in Figure 40 B, form Al film 807, antireflection film 808 and photoresist film 809 successively.In the lower floor of these Al film 807 upper stratas and/or Al film 807, form the barrier metal that constitutes with Ti, TiN, Ta, TaN etc., but its diagram is omitted.

In the state shown in Figure 40 B, the whole face of alignment mark 806 has all been covered by Al film 807.Therefore can not directly detect alignment mark 806.For this reason, the way that adopt the concavo-convex of the surface of detecting Al film 807 rather than detect the positional information of the alignment mark 806 that forms on the logical via layer of Al film 807 lower floors is aimed at.

So, for concavo-convex the aligning, be in advance on the alignment mark 806 that forms on the logical via layer, step is set by means of Al film 807 surfaces, make when forming Al film 807, on the surface of Al film 807, produce concavo-convex.

Employing is read the positional information of alignment mark 806 by means of the concave-convex surface of Al film 807, implements patterned way, forms Al wiring layer 810 shown in Figure 40 C.

But the concave-convex surface of Al film 807 will become to asymmetric for the concavo-convex of substrate owing to come from the character of the film build method of sputter vaporization etc., so will produce distortion in positional information, make the alignment error change greatly.This alignment error, it is defective with contacting of logical via layer 805 to bring out Al wiring layer 810, thereby produces the problem that the chip yield rate reduces.

So, in order to put forward this yield rate, just must before aiming at, optionally remove the Al film 807 on the alignment mark 806, be the aligning of the photoetching of carrying out the Al wiring layer, just must take directly to detect the mode of the mark that on the logical via layer of substrate, forms.

Figure 41 A has illustrated the manufacturing process of the semiconductor devices of embodiment of the present invention 19 to the sectional view of 41F.In addition,, in 41F, to the same position of 40C, give same label and omit its detailed explanation at Figure 41 A for those and Figure 40 A.

At first, shown in Figure 41 A, after having formed Al film 811, on Al film 811, form photoresist film 812.Then, shown in Figure 41 B, adopt to below formed the machining area of the Al film 811 of alignment mark and position alignment check mark (not drawing), the way of illuminating laser beam is optionally removed the photoresist film 812 on the alignment mark.As the mode of removing, also can use any mode that in last said embodiment, illustrates.

Then, shown in Figure 41 C,, remove the Al film 811 of machining area with the mode of wet etching etc.Remove photoresist film 812 by means of ashing.Under this state, just become for optionally removed on the alignment mark 806 and the position alignment check mark on the structure of Al film 811.

Under the state behind the Al film of optionally having removed on the alignment mark 806 811, shown in Figure 41 D, form i line film 814/ antireflection film 813 with photoresist.Secondly, the positional information that is used in the alignment mark 806 that forms on the logical via layer carried out aiming at adjust after, expose and develop, shown in Figure 41 E, formation photoresist figure 814.

The position alignment check mark is being carried out after the position alignment, can confirm that precision has formed aligning well.Prior art is owing to also there is the Al film on the position alignment check mark, inspection is difficult, checks then like this to be very easy to.

Behind above-mentioned photo-mask process, shown in Figure 41 F, adopt way with processing Al films 811 such as RIE operations, form Al wiring 815, remove photoresist figure 814 and antireflection film 813.If adopt manufacture method discussed above, just can carry out contacting graphical that defective few Al connects up by the hole.

In addition, in the present embodiment, usefulness can carry out the formation of processing of films continuously and the processing unit (plant) of Laser Processing carries out the formation and the Laser Processing of processing of films.But, also can carry out the formation and the Laser Processing of processing of films respectively with independent device.

(embodiment 20)

Under the inadequate situation of alignment precision to the machining area of the irradiation position of laser beam and regulation, will produce such problem: the border from machining area when carrying out shuttle-scanning repeatedly produces new particle.

In embodiment 2, told about to adopt and considered alignment precision at the machining area boundary vicinity, under the 2nd later light-struck situation, the visual field initialization system is controlled, make shot shape be reduced to the way also littler than the shot shape on the machining area middle body, be suppressed near the generation of the particle that produces the edge of machining area, prevent the method for adhering to of particle in machining area.

Below, tell about for above-mentioned same purpose, adopt the limit to make the irradiation position skew of laser beam, the way of desirable processing is carried out on the limit, suppresses the method for the generation of particle.

Figure 42 A shows the light job operation of embodiment of the present invention 20 to the planimetric map of 42E.

At first, shown in Figure 42 A, it is that slot-shaped laser beam relatively scans substrate that the limit makes the shot shape on substrate, to the 1st region R ₁Process.The 1st region R ₁Summit and machining area R ₀One of summit in succession.

Then, shown in Figure 42 B, the irradiation area that makes laser beam is from the 1st region R ₁Change to the 2nd region R ₂The 2nd region R ₂Summit and the 1st region R ₁The summit in succession machining area R not ₀One of summit in succession.Then, with the 1st region R ₁Equally, carry out the 2nd region R ₂The processing of interior processing of films.

Below, shown in Figure 42 C, the irradiation area that makes laser beam is from the 2nd region R ₂Change to the 3rd region R ₃The 3rd region R ₃Summit and region R ₁, R ₂The summit in succession machining area R not ₀One of summit in succession.Then, with the 1st region R ₁Equally, carry out the processing of the processing of films in the zone C.

Below, shown in Figure 42 D, the irradiation area that makes laser is from the 3rd region R ₃Change to the 4th region R ₄The 4th region R ₄Summit and region R ₁, R ₂, R ₃The summit in succession machining area R not ₀One of summit in succession.Then, with the 1st region R ₁Equally, carry out the 4th region R ₄The processing of interior processing of films.Just can carry out machining area R with above operation ₀The processing of interior processing of films.

At last, shown in Figure 42 E, make long slot-shaped laser beam to being set in machining area R ₀The 5th interior zone adds R ₅In shuttle-scanning repeatedly, remove in the 5th zone and add R ₅Interior remaining particle forms the machining shape of stipulating.In addition, also can adopt the 5th region R ₅The way of interior total irradiation is removed remaining particle, forms the machining shape of regulation.

More than, adopt the limit to make the irradiation position skew, the limit forms the way of the machining area of regulation, and the edge that just can do one's utmost to reduce machining area carries out light-struck number of times.For this reason, just can suppress the generation of particle, just can prevent the adhering to of particle in machining area from the machining area of regulation.

In the 5th region R ₅Process in, use the observing system 220 that constitutes by the CCD gamma camera, the particle inside and outside machining area is counted.And, at the front and back of laser radiation memory image, measure the difference of population, and control, make that becoming substantially in difference is the processing that just stops under 0 the situation in this part, under really not so situation, just proceed the way of processing, finish desirable processing.

In addition, also can adopt handle in region R ₁To R ₄It is the 5th region R that the zone that interior scanning repeatedly scans becomes ₅Way, reduce in the 5th region R ₅Interior scanning times.

In addition, the change of scanning area both can make the visual field initialization system move, and substrate is moved.

(embodiment 21)

Under the inadequate situation of alignment precision to the machining area of irradiation position and regulation, will produce such problem: the border from machining area when carrying out shuttle-scanning repeatedly produces new particle.

In embodiment 20, adopt the way that changes scanning area and do not make the size variation of visual field initialization system, the processing of the machining area of stipulating.For same with it purpose, in the present embodiment, to adopting the limit to make to handle the substrate vibration, the limit is carried out light-struck way and is carried out method for processing and describe.

The sectional view of Figure 43 A, 43B has illustrated the manufacturing process of the semiconductor devices of embodiment of the present invention 21.

At first, shown in Figure 43 A, adopt the limit to add vibration at least in the horizontal direction for substrate 100 by means of piezoelectric element etc., the limit makes and is focused into the way that thin slot-shaped laser beam 821 scans, and carries out the processing of processing of films.At this moment, as shown in figure 44, the region R that in fact can shine with 1 time pulse irradiation _fWith become than laser beam under dead-beat state the region R that can scan _iAlso wide.The planimetric map of Figure 44 shows the irradiation area of the laser beam of 1 pulse.Therefore, adopt the limit to provide the vibration way that the scanning of laser beam is carried out on the limit to substrate 100, in fact machinable zone will become also wideer than the zone that can process under the non-vibrating state of substrate.

Secondly, cut off the piezoelectric element Drive and Control Circuit, make substrate not quiveringly, shown in Figure 43 B, make long slot-shaped laser beam 822 in the zone that has processed, carry out shuttle-scanning repeatedly, remove particle remaining in machining area.In addition, also can remove particle remaining in machining area by means of total irradiation.

In the present embodiment, though make the substrate vibration, also can piezoelectric element be set at the visual field initialization system, make it vibration.

In the 2nd later scanning process, use the observing system 220 that constitutes by the CCD gamma camera, the particle inside and outside machining area is counted.And, at the front and back of laser radiation memory image, measure the difference of population, and control, make that becoming substantially in difference is the processing that just stops under 0 the situation in this part, under really not so situation, just proceed the way of processing, finish desirable processing.

(embodiment 22)

In the present embodiment,, change the window 236 of optical machining device 200 shown in Figure 2 and the interval between substrate 100 surfaces and process according to the scanning times of laser.

The sectional view of Figure 45 A, 45B has illustrated the manufacturing process of the semiconductor devices of embodiment of the present invention 22.

At first, shown in Figure 45 A, adopt the way at the interval between control substrate 100 surfaces and the window 236, the thickness of the liquid 239 on the substrate 100 is become be D1.Then, adopt to make to be focused into the way that thin slot-shaped laser beam 831 scans the processing processing of films.

To pure water incident the time,,, the area of irradiation area is A1 so becoming because laser beam reflects.

Then, shown in Figure 45 B, the interval between change window 236 and substrate 100 surfaces, make the thickness of the liquid 239 on the substrate 100 become for D2 (＜D1).Then, use the setting of the scanning area identical to make long slot-shaped laser beam once more to carrying out shuttle-scanning in the machining area repeatedly with the 1st time scanning.

Owing to the thickness attenuation that makes liquid 239, the influence of the refraction of the laser beam in liquid 239 reduces.For this reason, as shown in figure 46, the area A 2 of the irradiation area of the laser beam of 1 pulse, the specific area A1 that just becomes is narrow.Therefore, just can make the scanning area of ratio that the 2nd time scanning area forms the 1st time littler.The planimetric map of Figure 46 shows the irradiated area of the laser beam of 1 pulse.

As mentioned above, adopt the way in process, make the liquid Thickness Variation on the processed substrate just can suppress generation, just can prevent the adhering to of particle in machining area from the particle on the border of machining area.

In the 2nd time scanning process, use the observing system 220 that constitutes by the CCD gamma camera, the particle inside and outside machining area is counted.And, at the front and back of laser radiation memory image, measure the difference of population, and control, make that becoming substantially in difference is the processing that just stops under 0 the situation in this part, under really not so situation, just proceed the way of processing, finish desirable processing.

(embodiment 23)

At first, the formation to laser processing device describes.Figure 47 shows the formation of the laser processing device of embodiment of the present invention 23.In Figure 47, give same label and omit its explanation for the position that those and Fig. 2 are same.

Optical machining device 200 as shown in figure 47, possesses laser optical system 210, observing system 220 and Laser Processing part 230, gray scale, tone classified part 251, film structure identification part 252 and energy settings part 253.

This laser optical system 210, the laser oscillator control module 212, optical system 214, half-mirror 217 and the condenser lens 216 that possess laser oscillator 211, carry out the control of laser oscillator 211.

Shine the laser beam 213 of coming out from laser oscillator 211, see through the optical system 214, light shape forming unit 215, half-mirror 217 and the condenser lens 216 that make beam shape be configured as the size of unit of exposure separately successively, shine on the machined surface 100a that is arranged on the substrate 100 in the Laser Processing part 230.Between light shape forming unit 215 and condenser lens 216, insert observing system 220.

Observing system 220 possesses irradiation and is used for observing the observation of light on surface of substrate 100 with light source 223, half-mirror 224 and CCD gamma camera 222.

Below, the formation of viewing optical system is described.With the picture information that CCD gamma camera 222 obtains, be sent to gray shade scale/tone classified part 251.Gray shade scale/tone classified part 251 is at first discerned machining area from image.Ask gray shade scale or tone (wavelength dispersion of gray shade scale) within the machining area after being identified.Then, grid (pixel) grouping with same substantially gray shade scale or tone.Here, the gray shade scale or the tone of image being divided into groups, is same with asking the catoptrical intensity distributions from substrate.

Gray shade scale/the hue information of each grid or each group is sent to the film structure and assert part 252.Film structure is assert part 252, possesses the tone/gray shade scale of trying to achieve in advance and the corresponding tables of film structure.Assert in the part 252 at the film structure, each grid or each group tone/gray shade scale information and corresponding tables are partly compared.The film structure is assert part 252, according to corresponding tables each the set of dispense film in each group is constructed.In the film tectonic information, contain the thickness of film and the information of complex index of refraction at least.In addition, sometimes also contain the data that lower energy takes place in damage.

In energy settings part 253,, determine the energy of each irradiation area (process unit) of each unit of exposure according to the film tectonic information.

Laser oscillator control module 212, according to energy information, irradiation position information, control is for the power toward laser oscillator 211.

In addition, the irradiation position of laser beam can detect according to the information from sensor 235 and rotation control mechanism 234.In addition, also can be according to the picture information that obtains with CCD gamma camera 222, the irradiation position of detection laser beam.

In addition, in this device, though processing is LASER Light Source with light source use, but be not limited to this, so long as the wavelength that processing of films absorbs, and have and to carry out desirable processing, can make the light source of the ability of striping of maybe can removing of thickness minimizing in other words, what uses all right.For example, be organic membrane or inoranic membrane and having under the situation of absorption that adopt the way of using behind the tungsten lamp optically focused, the thickness minimizing is firmly established at visible region or ultraviolet region.In addition, also can be the charged particle beam of electron beam or ion beam etc.

Though the invention of this device relates to the processing in the water, is not limited to this.In with atmosphere, handle under the situation that processed substrate is handled, can constitute with the such device of Figure 48 and process.In Figure 48, give same label for the part of those identical mechanism.In processing under pressurized state, the processing under the decompression state, if use Figure 48 form device or objective table put into device in the reaction chamber, just can realize purpose of the present invention.

(embodiment 24)

In the present embodiment, the example that uses the processing of the device of explanation in embodiment 23 is described.

In the semiconductor forming process, on the wafer of a certain diameter 300mm, form antireflection film (complex index of refraction=n of thickness 56nm successively ₁₂-k ₁₂I:i is an imaginary unit) and the photoresist film (complex index of refraction=n of the homogeneous of thickness 400nm ₁₁-k ₁₁I:i is an imaginary unit).Carry out the processing of this wafer with laser processing device shown in Figure 47.

At first, carry out correction from the detection sensitivity of light intensity of observing light source and CCD gamma camera.Correction will be carried out in this wise: the gain of the light quantity adjustment of observing light source or CCD gamma camera is adjusted into makes the surface of coming to not drawing grind to form on the standard model of mirror-like irradiation from the light of observing light source, accept its reflected light with the CCD gamma camera, the detection gray shade scale of CCD gamma camera is become be preassigned value.

After the correction of having carried out observing system, on the objective table 232 of wafer 100 mountings in the retainer 231.Supply with ultrapure water by means of liquid flow device 237 to wafer 100 upper surfaces.In the stage of in retainer 231, having filled fully with ultrapure water, obtain machining area image all round by means of CCD gamma camera 222 machines.Machining area in the present embodiment is the alignment mark zone.CCD gamma camera 222 uses the gamma camera of the image that can obtain 256 gray shade scales of black and white.Being sent to gray shade scale/tone classified part 251 with these CCD gamma camera 222 observed images.

Figure 49 illustrates summary with the observed image of CCD gamma camera 222 (having set gray shade scale).Gray shade scale/tone classified part 251 is estimated gray shade scale according to the image letter.Under the situation of the present embodiment, the gray shade scale in having formed the 2nd zone 1302 of alignment mark is 167.In addition, the gray shade scale in the 1st zone 1301 is 56.In addition, in Figure 49, label 1300 expression machining areas.

This gray shade scale information then is sent to the film structure and assert part 252.Here the data ordering of being passed on for example is (x direction irradiation initial point, y direction irradiation initial point, x direction irradiating width, y direction irradiating width and a gray shade scale).These data are to make the data of a plurality of gray shade scale packetizing according to each grid (pixel) gray shade scale information that is had.In addition, for x direction irradiating width and y direction irradiating width, be the unit of exposure (process unit) that device is reserved in advance, be fixed value.The unit of exposure shape is rectangular shape (slit) or point-like for machining area.

In addition, say that here it is slot-shaped becoming, the long side direction that refers to shot shape equates substantially with a side's of machining area limit, the shape that the width of the direction vertical with long side direction is shorter than the opposing party's of machining area limit.In addition, the shot shape of so-called point-like is no matter refer to which all short than the width of the vertical direction of machining area shape of 2 width of the vertical direction of shot shape.

In film structure indexing unit, with such corresponding tables decision film structure of for example in table 1, being put down in writing.

Table 1

	Film structure 1A	Film structure 1B	Film structure 1C	...
	Film structure 1A	Film structure 1B	Film structure 1C	...	Gray shade scale	54±3	168±2	144±5
Upper energy limit	0.6J/cm ²/shot	0.4J/cm ²/shot	0.6J/cm ²/shot		Gray shade scale	54±3	168±2	144±5
Upper energy limit	0.6J/cm ²/shot	0.4J/cm ²/shot	0.6J/cm ²/shot		The energy lower limit	0.3J/cm ²/shot	0.2J/cm ²/shot	0.3J/cm ²/shot
The superiors of substrate	3	3	4		The energy lower limit	0.3J/cm ²/shot	0.2J/cm ²/shot	0.3J/cm ²/shot
The superiors of substrate	3	3	4		The number of plies	4	6	5
Layer 1	n ₁₁，k ₁₁	n ₁₁，k ₁₁	n ₁₁，k ₁₁		The number of plies	4	6	5
Layer 1	n ₁₁，k ₁₁	n ₁₁，k ₁₁	n ₁₁，k ₁₁		Layer 2	n ₁₂，k ₁₂	n ₁₂，k ₁₂	n ₁₃，k ₁₃
Layer 3	n ₁₅，k ₁₅	n ₁₈，k ₁₈	n ₁₄，k ₁₄		Layer 2	n ₁₂，k ₁₂	n ₁₂，k ₁₂	n ₁₃，k ₁₃
Layer 3	n ₁₅，k ₁₅	n ₁₈，k ₁₈	n ₁₄，k ₁₄		Layer 4	n ₁₆，k ₁₆	n ₁₉，k ₁₉	n ₁₅，k ₁₅
Layer 5	-	n ₁₁₀，k ₁₁₀	n ₁₆，k ₁₆		Layer 4	n ₁₆，k ₁₆	n ₁₉，k ₁₉	n ₁₅，k ₁₅
Layer 5	-	n ₁₁₀，k ₁₁₀	n ₁₆，k ₁₆		Layer 6	-	n ₁₆，k ₁₆	-

Layer 7

-

For example film is constructed 1A in table 1, is 4 layers of structure.Shown in Figure 50 A, film structure 1A is made of photoresist film (layer 1) 1401, antireflection film (layer 2) 1402 and basalis 1405 (layer 3) and 1406 (layers 4), in addition, though only remember that in corresponding tables complex index of refraction is arranged, the in fact also additional information that thickness is arranged.

Film structure 1B shown in Figure 50 B, is made of photoresist film 1401 (layer 1), antireflection film 1402 (layer 2), basalis 1408 (layer 3), 1409 (layers 4), 1410 (layers 5), 1406 (layers 6) of 3 layers of structure.In film structure B, the superiors of basalis are 1408 (layers 3).Film structure C shown in Figure 50 C, is made of photoresist film 1401 (layer 1), 1403 (layers 2), 1404 (layers 3), basalis 1405 (layer 4), 1406 (layers 5) of 3 layers of structure.The superiors of basalis are basalises 1405.

Based on this information, the 1st zone 1301 is identified as film structure 1B, and the 2nd zone 1302 is identified as film structure 1A.In addition, by this corresponding tables as can be known: the maximal value to the energy exposure in the 1st zone 1301 is 0.4J/cm ²/ shot is 0.6J/cm to the maximal value of the energy exposure in the 2nd zone 1302 ²/ shot.In table 1, the energy lower limit is the necessary energy of removing of film.The energy lower limit of film structure 1A is bigger than the energy lower limit of film structure 1B, and this is because under the situation of film structure 1A, the light absorption in the processing of films substrate is few, in the few cause of suprabasil thermal value.

Then, energy settings part 253 will be set the best irradiation energy of each irradiation area (process unit) according to the upper energy limit of recording and narrating in table 1 and the optical constant of lower limit and film.Under situation about being exaggerated owing to multiple relevant irradiation energy, with regard to the little energy of the value of distribution ratio table, on the contrary, under owing to multiple relevant situation about offseting each other, with regard to the big energy of the value of distribution ratio table.The lower limit of energy is the energy that the processing of processing of films will become difficulty.Certainly, can the big energy of distribution ratio energy lower limit.

Energy settings part 253 is considered the heterogeneity of irradiation energy, shown in Figure 51,52, the irradiation energy to 1301 irradiations of the 1st zone is set at 0.3J/cm ²/ shot.Energy settings part 253 is set at 0.5J/cm to the irradiation energy to 1302 irradiations of the 2nd zone ²/ shot.According to the energy of setting in this wise, each process unit is denuded.If adopt, then shown in Figure 53, just can process the 1301 and the 2nd zone 1302, the 1st zone respectively with suitable energy in the job operation shown in the present embodiment.

For example, consider the energy settings of laser to be 0.35J/cm ²/ shot and situation about haveing nothing to do with the 1st zone and the 2nd zone.In this case, irradiation energy stable bad is when irradiation energy diminishes, in the 2nd zone 1302, will produce film remnants, and when irradiation energy becomes big, in the 1st zone 1301, will produce damage etc., can produce many processing defective (Figure 54,55).

Just as in the job operation as shown in the present embodiment, adopt the way of denuding according to the change irradiation energy limit, formation limit of substrate, just can with do not have film remnants and, the good state realization that also not have to damage is processed.

The way that employing exposes alignment mark by means of this processing just can be aimed at closely, therefore can make grid size form carefullyyer, and the LSI that makes manufacturing can carry out high speed processing becomes possibility.The semiconductor devices of making of present technique just can be realized the high speed handled as mentioned above, in addition, can also set the spacious and comfortable degree of aligning for a short time, thereby, can realize dwindling of chip area.

In the present embodiment,,, be not limited to this though use is the CCD gamma camera of gray shade scale as observing system.Also can use the gamma camera of color-type.

In addition, corresponding tables is not limited to the form of table 1, can so long as store the table of what form of table of the necessary information of processing.

(embodiment 25)

In the semiconductor devices forming process, on the wafer of a certain diameter 300mm, form antireflection film (complex index of refraction=n of thickness 300nm successively ₂₄-k ₂₄I:i is an imaginary unit) and thickness 90nm SOG layer (complex index of refraction=n ₂₃-k ₂₃I:i is an imaginary unit) and the photoresist film (complex index of refraction=n of the homogeneous of thickness 400nm ₂₁-k ₂₁I:i is an imaginary unit).

Wafer 100 is loaded on the objective table 232.Obtain the image of machining area periphery with CCD gamma camera 222 (RGB).Machining area in the present embodiment is the alignment mark zone, CCD gamma camera 222, and use can obtain the respectively gamma camera of the image of 256 gray shade scales of RGB.Being sent to gray shade scale/tone classified part 251, carry out the gray shade scale evaluation with CCD gamma camera 222 observed images.

The image of being taken the photograph shown in Figure 56.To the region allocation gray shade scale hue information in Figure 54 with the grid zone.Zone in the dotted line is a machining area 1500.Gray shade scale/tone in the 2nd zone (mark part) 1502 be (R, G, B)=(150,93,201).In addition, the gray shade scale/tone in the 1st zone 1501 be (R, G, B)=(32,100,87).Then, this information is sent to film structure indexing unit.Here the data ordering that will pass on for example is (x direction irradiation initial point, y direction irradiation initial point, x direction irradiating width, y direction irradiating width, R gray shade scale, G gray shade scale and B gray shade scale) such data.Going up said data, is the gray shade scale information that has according to each zone and the data of the corresponding packetizing of gray shade scale.For x direction irradiating width and y direction irradiating width, be (the R of comparison adjacent areas, G, B) gray shade scale, to its difference not regarded as same group and the gray shade scale of packetizing, the irradiating width of the rectangle when being divided into rectangle (slit) shape or point-like again or the x of point, y direction ± 5 with interior gray shade scale.In film structure indexing unit, with such corresponding tables decision film structure of for example in table 2, being recorded and narrated.

Table 2

	Film structure 2A	Film structure 2B	Film structure 2C	...
	Film structure 2A	Film structure 2B	Film structure 2C	...	Gray shade scale (R, G, B) ± 10%	(50，90，122)	(147，95， 199)	(30，100， 90)
Upper energy limit	0.6J/cm ²/shot	0.4J/cm ²/shot	0.7J/cm ²/shot		Gray shade scale (R, G, B) ± 10%	(50，90，122)	(147，95， 199)	(30，100， 90)
Upper energy limit	0.6J/cm ²/shot	0.4J/cm ²/shot	0.7J/cm ²/shot		The energy lower limit	0.3J/cm ²/Shot	0.2J/cm ²/shot	0.4J/cm ²/shot
The superiors of substrate	3	4	4		The energy lower limit	0.3J/cm ²/Shot	0.2J/cm ²/shot	0.4J/cm ²/shot
The superiors of substrate	3	4	4		The number of plies	4	7	5
Layer 1	n ₂₁，k ₂₁	n ₂₁，k ₂₁	n ₂₁，k ₂₁		The number of plies	4	7	5
Layer 1	n ₂₁，k ₂₁	n ₂₁，k ₂₁	n ₂₁，k ₂₁		Layer 2	n ₂₂，k ₂₂	n ₂₃，k ₂₃	n ₂₃，k ₂₃
Layer 3	n ₂₅，k ₂₅	n ₂₄，k ₂₄	n ₂₄，k ₂₄		Layer 2	n ₂₂，k ₂₂	n ₂₃，k ₂₃	n ₂₃，k ₂₃
Layer 3	n ₂₅，k ₂₅	n ₂₄，k ₂₄	n ₂₄，k ₂₄		Layer 4	n ₂₆，k ₂₆	n ₂₈，k ₂₈	n ₂₅，k ₂₅
Layer 5	-	n ₂₉，k ₂₉	n ₂₆，k ₂₆		Layer 4	n ₂₆，k ₂₆	n ₂₈，k ₂₈	n ₂₅，k ₂₅
Layer 5	-	n ₂₉，k ₂₉	n ₂₆，k ₂₆		Layer 6	-	n ₂₁₀，k ₂₁₀	-
Layer 7	-	n ₂₆，k ₁₆	-		Layer 6	-	n ₂₁₀，k ₂₁₀	-

In table 2, for example film structure 2A is 4 layers of structure.Shown in Figure 57 A, film structure 2A is made of photoresist film 1601 (layer 1), antireflection film 1602 (layer 2) and basalis 1605 (layer 3), 1606 (layers 4) of 3 layers of structure.In addition, though only remember that in corresponding tables complex index of refraction is arranged, the in fact also additional information that thickness is arranged.

Film structure 2B shown in Figure 57 B, is made of photoresist film 1601 (layer 1), sog film 1603 (layer 2), antireflection film 1604 (layer 3), basalis 1608 (layer 4), 1609 (layers 5), 1610 (layers 6), 1606 (layers 7) of 3 layers of structure.In film structure 2C, shown in Figure 57 C, constitute by photoresist film 1601 (layer 1), sog film 1603 (layer 2), antireflection film 1604 (layer 3), basalis 1605 (layer 4), 1606 (layers 5).

Based on this information, the 1st zone 1501 is decided to be film structure 2B, and the 2nd zone 1502 is decided to be film structure 2C.In addition, by this table 2 as can be known: the higher limit to the energy exposure in the 1st zone 1501 is 0.4J/cm ²/ shot is 0.7J/cm to the maximal value of the energy exposure in the 2nd zone 1502 ²/ shot.Here, the higher limit of irradiation energy, in film structure 2B, 2C, login be to be used for only making the energy of antireflection film gasification.The lower limit of irradiation energy is the necessary energy of removing of processing of films.The irradiation energy lower limit of film structure 2C is bigger than the irradiation energy lower limit of film structure 2B, and this is because under the situation of film structure 2C, the light absorption in the processing of films substrate is few, in the few cause of suprabasil thermal value.

Energy settings part 253 is at first set irradiation area (process unit) according to the group of the classification of gray shade scale, tone correspondence., just the Region Segmentation of group is become according to penetrating zone little, rectangular shape or point-like, zone according to penetrating under the big situation in zone in the size in the zone of group.For example, shown in Figure 58, as the irradiation area in the machining area 1500, set the 1st irradiation area 1511a to 1511g and the 2nd irradiation area 1512a to 1512d.

Then, energy settings part 253 will be set the best irradiation energy of each irradiation area (process unit) according to the upper energy limit of recording and narrating in table 2 and the optical constant of lower limit and film.Under situation about being exaggerated owing to multiple coherent energy, with regard to the little energy of the value of distribution ratio table, on the contrary, under owing to situation about offseting each other, with regard to the big energy of the value of distribution ratio table.The lower limit of energy is the energy that the processing of processing of films will become difficulty.Certainly, can the big energy of distribution ratio energy lower limit.

Energy settings part 253 is the 1st irradiation area 1511a 0.3J/cm to the energy settings of 1511g ²/ shot.Energy settings part 253 is the 2nd irradiation area 1512a 0.5J/cm to the energy settings of 1512d ²/ shot.According to the energy of setting in this wise, each process unit is denuded.If adopt, just can process the 1501 and the 2nd zone 1502, the 1st zone respectively with suitable energy in the job operation shown in the present embodiment.

To the irradiation energy of the 1st zone the 1501 and the 2nd zone 1502 irradiations, can distinguish correctly and set.The setting of energy, the utilisable energy setting device carries out each irradiation (processing) unit.Energy will decide according to the optical constant optimization of the upper energy limit of recording and narrating in corresponding tables and lower limit and film.Under situation about being exaggerated owing to multiple coherent energy, with regard to the little energy of the value of distribution ratio table, on the contrary, under owing to multiple relevant situation about offseting each other, with regard to the big energy of the value of distribution ratio table.The lower limit of energy is the energy that the processing of processing of films will become difficulty.Certainly, can the big energy of distribution ratio energy lower limit.

Figure 58 shows the result by means of above process distribution energy.Distribute 0.3J/cm respectively for the 1st zone, the 2nd zone ²/ shot, 0.6J/cm ²/ shot.According to the energy of setting in this wise, each process unit is denuded, just can not have film remnants and do not have the processing that substrate damages.

Consider the energy settings of laser to be 0.4J/cm ²/ shot processes and situation about haveing nothing to do with the 1st zone and the 2nd zone.This energy is the upper limit in the 1st zone 1501, is the lower limit in the 2nd zone 1502.Therefore, in the 1st zone 1501, will produce many damages.In addition, in the 2nd zone 1502, then will produce many film remnants.Owing to produced such problem, practicality is difficult.

By the job operation shown in the present embodiment, denude according to the change irradiation energy limit, formation limit of substrate, can realize not having the processing of residual film and undamaged kilter.

In the present embodiment,,, be not limited to this though use is the CCD gamma camera as viewing optical system.Also can use video frequency camera.In addition, corresponding tables is not limited to the form of table 2, can so long as store the table of what form of table of the necessary information of processing.In addition, same with embodiment 24, liquid is processed to machining area stream ground.

(embodiment 26)

Laser processing device is described.Figure 59 shows the formation of the laser processing device of embodiment of the present invention 26.In Figure 59, give same label and omit detailed explanation for those positions identical with Figure 47.

In Figure 59, gas measuring diameter part 1261, according to the image that obtains with CCD gamma camera 222, the irradiation area of identification laser beam.Gas measuring diameter part 1261, in irradiation area, on the light path of laser beam, the diameter of the bubble that sequential test produces owing to the irradiation of laser beam (gas).Then measurement result is sent to laser oscillator control module 1212.Laser oscillator control module 1212 according to the diameter of bubble, is adjusted the timing of illuminating laser beam.Specifically, send such indication: make the diameter of the bubble on the light path be present in the processing of films laser beam more than setting value during in do not carry out the irradiation of laser beam, become to carrying out the irradiation of laser beam after littler than setting value again in the size of bubble.

Gas measuring diameter part 1261 adopts within the reflected light that receives with CCD gamma camera 222, and the way of calculating the pixel number of specific gray shade scale scope is asked the diameter of bubble.Then, laser oscillator control module 1212, to the diameter of measured bubble and in advance the login setting value compare.Under the situation of diameter greater than setting value of bubble, laser oscillator control module 1212 just stops the irradiation from the laser beam of laser oscillator 1211.Under the situation of diameter less than setting value of bubble, laser oscillator control module 1212 just allows the vibration from the laser beam of laser oscillator 1211.

In addition, though use is according to the method for the diameter of the catoptrical image measurement bubble that receives with CCD gamma camera 222, be not limited to this.For example, so long as how all right have the method that can observe in the ability of the existence that adds the bubble that takes place man-hour of processing of films.For example, to the different other light of light source of area illumination and processing usefulness, light that measure to observe usefulness is by the angle of bubble scattering, just can judge having or not or the size of gas of gas.

Possesses liquid flow-generator 1263.Liquid flow-generator 1263 makes the irradiation area of laser produce liquid stream.Can remove the gas that will produce continuously by means of liquid stream.Liquid flow-generator 1263 it is desirable to make do not produce irregular disorder like that in laser beam, produces the liquid stream of constant flow rate on constant direction.In addition, liquid flow-generator 1263 drives in the time of can carrying out Laser Processing actually at least.

In addition, under the situation of this device, though processing with light source use be LASER Light Source, be not limited to this.So long as the wavelength that processing of films absorbed has again and can carry out desirable processing, make processing that thickness reduces or that can remove the ability of striping what use can in other words with light source.For example, can use tungsten lamp or Xe flashlamp.Being organic membrane, inoranic membrane and having under the situation of absorption at visible region or ultraviolet region, adopt the way of using behind tungsten lamp or the Xe flashlamp optically focused, reduce thickness.In addition, also can be the charged particle beam of electron beam or ion beam etc.

In addition, though the invention of this device relates to the processing in the water, this job operation is not limited to process in the water.In processing in the atmosphere of processed substrate, pressurized treatments, the reduced pressure treatment, also can use, can use the retainer structure with matching with the processing of each.

Formation to laser processing device in atmosphere in Figure 60 describes.The summary that Figure 60 shows the laser processing device of embodiment of the present invention 26 constitutes.In Figure 60, give same label and omit its explanation for those positions identical with Figure 59.

In Figure 60, possesses flow generator 1262.Flow generator 1262 makes the irradiation area of laser beam produce air-flow, can remove the gas that is produced continuously by means of air-flow.Flow generator 1262 it is desirable to make can not produce irregular disorder like that in laser beam, produces the air-flow of constant flow rate on constant direction.In addition, flow generator 1262 drives in the time of can carrying out Laser Processing actually at least.

The exhausr port of air-flow supply pipe 1262a it is desirable to very the machined surface 100a near processed substrate 100, makes only just optionally to produce air-flow near the irradiation area of laser beam.In addition, though adopt the way that makes it exhaust to produce air-flow, also can adopt the way that makes it air-breathing to produce air-flow.

(embodiment 27)

In the present embodiment, be used in the optical machining device that the device described in the embodiment 26 constitutes, the example that it is applied to be considered to all processing of necessity in the manufacture process of semiconductor devices be described.Below the application examples that will illustrate can realize well with the optical machining device of embodiment 26.

At first, to 61C, carry out the situation of light processing, describe not considering the bubble ground illuminating laser beam on the light path with Figure 61 A.Figure 61 A is to Figure 61 C, shows not consider the light job operation of carrying out on bubble ground.

Shown in Figure 61 A, prepared on silicon wafer 1701, to have formed for example 1 micron the substrate of photoresist film 1703 of thickness of dielectric film 1702.Then, the 3rd higher hamonic wave (wavelength 355nm) of irradiation Q-Switch YAG laser is removed the photoresist film 1703 of the position of regulation.The energy density of per 1 pulse of laser beam is 0.4J/cm ²For example the oscillation frequency of laser beam 1704 is set to 250Hz.The size of machining area for long 100 microns * wide 200 microns.

Behind illuminating laser beam, because of photoresist film by the abrasion gassing.When under the state that exists bubble on the light path, shine the laser beam 1704 of next after, shown in Figure 61 B, laser beam 1704 will be carried out scattering because of the bubble 1705 that remains on the light path.Consequently, laser beam 1704 also can shine the outside of machining area.

Consequently, shown in Figure 61 C, outside machining area, will produce many pin holes 1706 or particle 1707 owing to the laser that is scattered.Simultaneously, can find that at the boundary of machining area the film of photoresist film peels off 1708.This film is peeled off, and with photoresist, under the situation of the compound photoresist film that forms of the multi-ply construction of inoranic membrane, antireflection film, also will show significantly.

So, in the present embodiment, in process, observe with the laser processing device shown in Figure 59.According to using CCD gamma camera 222 observed images, measure the size of the bubble that in machining area, takes place with gas diameter measurement part 1261.Laser oscillator control module 1212 is according to the vibration of measured size control laser beam.

Referring to Figure 62 A, 62B, the light job operation of the present embodiment is described.Figure 62 A, 62B show the light job operation of embodiment of the present invention 27.

Shown in Figure 62 A, according to the image that obtains by CCD gamma camera 222, on light path, exist the bubble 1705 that produces in the previous rayed during in do not carry out rayed.By means of carrying bubbles 1705 such as liquid streams, after confirming that with gas diameter measurement part 1261 bubble disappears from light path, shown in Figure 62 B, restart the irradiation of laser beam 1704.Control and make the limit carry out operation as described above limit repeatedly to process.

Do not considering under the situation that bubble ground processes, be shown in Figure 63 with considering the relation under the situation that bubble is processed apart from the distance of machining area and pin hole number.In Figure 63, A is the pin hole number of processing after considering bubble, and B is the pin hole number of not considering under the situation that bubble ground processes.Shown in Figure 63, under the situation of considering bubble, the pin hole number outside machining area, with the machining area ratio under the situation of not considering bubble, machining area A has reduced significantly.Consequently, can carry out the processing that can not impact fully to the place of wanting the configuration device figure.In addition, can also suppress peeling off of photoresist film.

In addition,, do not find pin hole or photoetching buffings outside machining area yet, thereby confirm to be suppressed at the peeling off of photoresist film of machining area boundary portion office with the result that SEM observes.

In addition, the irradiation area of laser beam, shown in Figure 64 A, 64B, it is slot-shaped it is desirable to for machining area.Figure 64 A, 64B show the shape of the irradiation area of the laser beam in the light processing of embodiment of the present invention 27.Figure 64 A is a sectional view, and Figure 64 B is a planimetric map.Shown in Figure 64 A, 64B, for machining area 1710, it is slot-shaped (vertical 100 microns * horizontal 5 microns) that the shape of the irradiation area 1712a of laser beam 1712 is become.Then, 1712 pairs of wafers 1701 of laser beam are relatively scanned.As making wafer 1701 and laser beam 1712 relatively carry out method for scanning, the optical axis of laser beam is fixed, substrate is moved.Perhaps, adopt to make to be arranged on the laser beam light path, the slit of the control shape mobile way of going forward side by side scans laser beam.

Shown in Figure 65 A, 65B, shining laser beam 1711 big or small and the irradiation area 1711a that machining area 1710 equates substantially, machining area 1710 is carried out under the situation of light processing totally, the kind or the thickness that depend on photoresist, exist because of be in photoresist film 1703 at the initial boundary member that is engraved in machining area 1710 when light-struck and can produce and peel off, and become for process underproof may.This is because when photoresist film 1703 evaporates because of absorbing light-struck heat fusion, if the irradiation area of laser beam is big, then can not be completely the stress absorption that takes place at the interface between photoresist film and basilar memebrane, the cause that the photoresist film limit processes is blown on the limit off.

Therefore, it is desirable to, make to be focused into thin slot-shaped light substrate is relatively scanned, and the limit is from confirming between light path that bubble does not exist the limit to process as mentioned above.By means of this,,, can suppress film and peel off so can relax the stress at the interface between photoresist and the basilar memebrane because the area of processing with 1 time rayed is little.

In addition, shown in Figure 66 A, 1721 pairs of machining areas 1720 of a plurality of slot-shaped irradiation areas are scanned.In addition, shown in Figure 66 B, 1722 pairs of machining areas 1720 of irradiation area of a plurality of point-like are scanned.In addition, the irradiation area of 1 point-like is scanned.

In the present embodiment, though as processing with light source use be the 3rd higher hamonic wave of Q-Switch YAG laser, be not limited to this.Also can use the pulse laser and the light of the 4th higher hamonic wave (wavelength 266nm) of Q-Switch YAG laser or KrF excimer laser etc.In addition, the energy density of per 1 pulse of being shone is generally 0.2J/cm ²To 0.5J/cm ², and be to adjust can process well and can not give the energy that causes damage inside and outside the machining area.Can suit to select energy density to make and inside and outside also can not giving machining area under the situation beyond the organic material, not cause damage.

In addition, though doing becomes the image of obtaining from the CCD gamma camera, and with it Observations Means as bubble, the Observations Means of bubble is not limited to this, also scattered light or other light that can form by bubble to irradiation area incident, and detect with this scattered light.

Oscillation frequency as for laser beam is not limited to 250Hz, can suit to set between 10 to 10000Hz.The objective table of available low frequency and low speed moves and carries out under the situation of the positional precision of objective table being used as necessity.In addition, needing under the situation of high speed processing, then available high frequency and high speed are carried out objective table and are moved.

Carrying out the irradiation of laser beam under the state of the remaining bubble that constant diameter arranged on the light path processes.Then, the diameter of bubble is studied the pinhole number that produces around machining area.Figure 67 shows the diameter of bubble and the relation of pin hole number.Shown in Figure 67, be that the pin hole number that is produced is substantially 0 under the situation below 3 microns according to diameter, before bubble collapse, even if be that illuminating laser beam also can be processed under the state below 3 microns at the diameter of bubble at bubble.Before bubble collapse, adopt the way of illuminating laser beam, just can improve handling rate.

In addition, the result who observes with SEM does not find photoetching buffings for micron when following at the bubble diameter that takes place yet, thereby confirms to be suppressed at the peeling off of photoresist film of machining area boundary portion office.

As mentioned above, under the situation of photoresist film, it is remaining on light path that bubble is arranged is below 3 microns the time, just can carry out desirable processing and not have the processing of pin hole etc. defective, but, because the relation between the size of pin hole and bubble is all different to each the film kind that will process, so as long as can satisfy in each processing of films, do not produce pin hole and bubble diameter between relation.

Under the situation that can predict bubble diameter, can make the speed optimization of liquid stream.Figure 68 shows the width W of irradiation area and adds relation between the bubble diameter φ that produces man-hour.In addition, the energy density of each pulse of laser beam is 0.2J/cm ²To 0.5J/cm ²Scope.The width W of so-called irradiation area is the length of direction of stream of the liquid of irradiation area.Shown in Figure 68, become the curve of representing for the higher limit of using the bubble diameter that irradiation peak width W is taken place.Consequently, if establish oscillation frequency is Z (1/sec), adding man-hour with the irradiation area width W, the flow velocity V (1/sec) that processed substrate φ/2, top (micron) are located satisfies following relational expression, then can carry out the vibration of laser beam under the non-existent substantially state of bubble.

V &GreaterEqual; 6 \times \sqrt{\frac{W}{2}} \times Z

If make that satisfy this relation processes like that, then according to the size of bubble, have or not, also can not carry out the control of timing of the irradiation of laser.For satisfying this relation, as long as be provided with to any one control section controlled among above-mentioned oscillation frequency Z, width W and the flow velocity V.Above-mentioned control section also can be controlled above-mentioned flow velocity according to predefined above-mentioned oscillation frequency Z and width W.In addition, above-mentioned control section also can be controlled above-mentioned oscillation frequency Z according to predefined above-mentioned flow velocity V and width W.

In addition, in machining area, produce the situation that light processing is carried out on the air-flow limit with Figure 69 A, 69B explanation limit in the atmosphere shown in Figure 60.Shown in Figure 69 A, in process,, observe the diameter of the gas 1731 that in air-flow, when rayed, takes place with gas measuring diameter part 1261.Then, shown in Figure 69 B, after confirming that gas 1731 disappears from light path, carry out the irradiation of laser beam 1704 again.Employing makes the limit carry out operation as described above repeatedly, and the limit processes the way of controlling like that, just can carry out good processing.In addition, the processing in atmosphere is also same with the processing in liquid, also can use to make in irradiation area to be focused into thin slot-shaped light substrate is relatively carried out method for scanning.In addition, the shape of irradiation area also can be point-like or the shape that disposes a plurality of slot-shaped or point-like.

Though explanation is the method for removing the photoresist film that uses by means of rayed in photo-mask process in the above-described embodiment, but on the other hand, in semiconductor devices, also be formed with polyimide film, Si polycrystalline film and silicon carbonized film, for these films, when removing, can use said method too.

(embodiment 28)

The sectional view of Figure 70 A, 70B has illustrated the manufacturing process of the semiconductor devices of embodiment 28.Figure 70 A, 70B show Laser Processing middle operation that exists the silicon nitride film 1742 of interlayer dielectric 1741 ground formation on silicon wafer 1701 in liquid.Silicon nitride film 1742, formation such as for example available CVD or sputtering method.The thickness of silicon nitride film is 20nm.The processing of the machining area of this silicon nitride film (vertical 100 microns * horizontal 200 microns), the 4th higher hamonic wave of available Q-Switch YAG laser (wavelength 266nm), irradiation energy density 0.5J/cm ²Carry out.

In the present embodiment,, in liquid, carry out light processing with the device shown in Figure 59.Adding man-hour, gas measuring diameter part 1261 according to using CCD gamma camera 222 observed images, is measured the diameter of the bubble that takes place owing to laser radiation in machining area.Shown in Figure 70 A, on light path, exist bubble 1705 during in, just do not carry out the laser radiation of next.Shown in Figure 70 B, after confirming that with gas measuring diameter part 1261 bubble 1705 is disappeared from light path by the liquid carrying, then carry out the irradiation of laser beam 1704 again.Control and make the limit carry out operation as described above repeatedly, the limit processes.

The result that processing back SEM observes does not find the generation of pin hole or dispersing of silicon nitride particle on the surface of silicon nitride film 1742, do not observe peeling off in the boundary portion office yet.

In addition, because silicon nitride film does not absorb the laser beam of the 3rd higher hamonic wave (wavelength 355nm), the 2nd higher hamonic wave (wavelength 532nm), first-harmonic (wavelength 1064nm) of Q-Switch YAG laser so can not process with these wavelength.

In addition, job operation is not limited to this, also can carry out in atmosphere.

(embodiment 29)

The sectional view of Figure 71 A, 71B has illustrated the manufacturing process of the semiconductor devices of embodiment 29.Figure 71 A, 71B show Laser Processing middle operation that exists the polyimide film 752 of interlayer dielectric 751 ground formation on silicon wafer 1701 in liquid.Polyimide film 752 is owing to the laser of absorbing wavelength 266nm, so can process with the 4th higher hamonic wave (wavelength 266nm) of Q-Switch YAG laser.

In the present embodiment,, in liquid, carry out light processing with the device shown in Figure 59.Adding man-hour, gas measuring diameter part 1261 according to using CCD gamma camera 222 observed images, is measured the diameter of the bubble that takes place owing to laser radiation in machining area.Shown in Figure 71 A, on light path, exist bubble 705 during in, just do not carry out the laser radiation of next.Shown in Figure 71 B, after confirming that with gas measuring diameter part 1261 bubble 705 disappears from light path, then carry out the irradiation of laser beam 704 again.Control and make the limit carry out operation as described above repeatedly, the limit processes.

The result that processing back SEM observes does not find the generation of pin hole or dispersing of polyimide particle on the surface of polyimide film 752.Therefore can confirm to have carried out good processing.

In addition, job operation is not limited to this, also can process in atmosphere.

(embodiment 30)

The sectional view of Figure 72 A, 72B has illustrated the manufacturing process of the semiconductor devices of embodiment of the present invention 30.Figure 72 A, 72B show Laser Processing middle operation that exists the metal film 1762 of silicon oxide layer 1761 ground formation on silicon wafer 1701.In the present embodiment, can use copper film as metal film 1762.Irradiating laser carries out desirable processing on the surface of copper film 1762.Copper film 1762 after the light processing for example can use in the power-supply wiring of the wiring that interelement is electrically connected, supply power, electrode etc.

In the present embodiment,, in liquid, carry out light processing with the processing unit (plant) shown in Figure 59.The 4th higher hamonic wave (wavelength 266nm) to the pure copper film 1762 irradiation Q-Switch of thickness 500nm YAG laser is carried out light processing.The shape of irradiation area is that vertical 100 microns * 200 microns of horizontal strokes, irradiation energy are 3J/cm ²

Add man-hour at light, gas measuring diameter part 1261 according to using CCD gamma camera 222 observed images, is measured the diameter of the bubble that takes place owing to laser radiation in the light machining area.Shown in Figure 72 A, on light path, exist bubble 1705 during in, just do not carry out the laser radiation of next.Shown in Figure 72 B, confirming that with gas measuring diameter part 1261 bubble 1705 is flowed carrying by liquid and walks, bubble 1705 then carries out the irradiation of laser beam 1704 after disappearing from light path again.Control and make the limit carry out operation as described above repeatedly, the limit processes.

The result that processing back SEM observes does not find the generation of pin hole or the metallics that disperses at the machining area periphery.In addition, do not observe at the film of boundary portion office yet and peel off.Therefore, can confirm to have carried out good processing.

This effect, even if make Q-Switch YAG laser, the 3rd higher hamonic wave (wavelength 355nm), the 2nd higher hamonic wave (wavelength 532nm), first-harmonic (wavelength 1064nm) change in this wise, can realize similarly.In other words, so long as have the light that the copper film can absorb such wavelength.Copper film on the processed wafer well.

The example that uses copper film as metal film 1762 has been described.But, to raising for corrosion resistivity on as the copper film of main conductive layer, the monofilm of composite membrane that nickel film, chromium film lamination are got up or aluminium film, aluminium alloy (Al-Si, Al-Cu, Al-Cu-Si etc.) film, carry out at potential barrier metal film or antireflection film on these monofilm superimposed layers also can obtaining same effect under the situation of light processing.

In addition, also can in atmosphere, process with the device shown in Figure 60.

(embodiment 31)

Semiconductor wafer is carried out Laser Processing, can expect as the microtomy that cuts out wafer chip.Particularly in the filming of semi-conductor chip, in the continuous development of figure miniaturization, dicing method as semi-conductor chip, form (hemisect) ditch till earlier in from the semiconductor wafer surface to the way, it is effective grinding with the first microtomy of separating till arriving the ditch of hemisect from the back side of semiconductor wafer then.

The sectional view of Figure 73 A, 73B has illustrated the manufacturing process of the semiconductor devices of embodiment of the present invention 31.Processing is carried out in liquid with the processing unit (plant) shown in Figure 59.Processing can adopt the way of the 4th higher hamonic wave (wavelength 266nm) of irradiation Q-Switch YAG laser to carry out.The shape that adds the irradiation area in man-hour is 10 microns of short side directions, the rectangle that long side direction is 500 microns.The irradiation energy density of per 1 pulse of laser beam is 4J/cm ²The irradiation area of processing adopts the way that semiconductor wafer 1770 is scanned with the speed of 10mm/sec on long side direction, around each semiconductor element, form slice (ditch).About 10 microns of formed ditch width, about 50 microns of the degree of depth.In process, observe the light processing of carrying out owing to laser radiation and the size of the bubble that in machining area, takes place.

Add man-hour at light, gas measuring diameter part 1261 according to using CCD gamma camera 222 observed images, is measured the diameter of the bubble that takes place owing to laser radiation in machining area.Shown in Figure 73 A, on light path, exist bubble 1705 during in, just do not carry out the laser radiation of next.Shown in Figure 73 B, confirming that with gas measuring diameter part 1261 bubble 1705 is flowed carrying by liquid and walks, bubble 1705 then carries out the irradiation of laser beam 1704 after disappearing from light path again.Control and make the limit carry out operation as described above repeatedly, the limit processes.After processing, one side grinding semiconductor chip 1770 is to separate from the back side.

The result that processing back SEM observes, near the silicon bits of not finding the generation of pin hole or disperse the laser radiation zone are not observed at the film of boundary portion office yet and are peeled off.Therefore, can confirm to have carried out good processing.

In last said light processing, though what use is the 4th higher hamonic wave (wavelength 266nm) of Q-Switch YAG laser, but, this effect, even if make Q-Switch YAG laser, the 3rd higher hamonic wave (wavelength 355nm), the 2nd higher hamonic wave (wavelength 532nm), first-harmonic (wavelength 1064nm) change in this wise, can realize similarly, in addition, so long as have the light that silicon wafer can absorb such wavelength, processing silicon wafer well.In addition, also can in atmosphere, process with the processing unit (plant) shown in Figure 60.

In addition, in Figure 60, though on silicon wafer, formed slice,, adopt this job operation to form the technology of slice, in the element separation of light emitting diode that the compound semiconductor with Ga, P, As, In, Al etc. forms or semiconductor laser, also can use.

(embodiment 32)

Remove outside the first dicing method that in last said embodiment, illustrates, in the end, also can use this job operation just in the technology that the silicon wafer of filming has been cut into slices in advance.Figure 74 A shows the manufacturing process of the semiconductor devices of embodiment 32 to 74D.Figure 74 A shows so back slicing process to 74D.

At first, shown in Figure 74 A, keep the device layer 1782 of silicon wafer 1781 with slicing band 1783.On device layer 1782, form semiconductor element and multiple wiring layer here.The superiors at device layer 1782 form passivation layer.

Then, shown in Figure 74 B,, make silicon wafer 1781 filmings from back side mechanical lapping silicon wafer 1781.On the abrasive surface of the silicon wafer after the filming 1781, form the deterioration that crushable layer produces intensity owing to mechanical stress.In order to prevent the deterioration of intensity, remove crushable layer with wet etching, suppress the reduction of chip intensity.

Then, shown in Figure 74 C, remove slicing band 1783.Then, wafer is translated into the back side, with the back side of slicing band 1784 maintenance silicon wafers 1781.

Then, shown in Figure 74 D, device layer 1782 irradiates lights are processed.

In process, with same before this, gas measuring diameter part 1261 according to using CCD gamma camera 222 observed images, is measured the diameter of the bubble that takes place owing to laser radiation in machining area.Shown in Figure 73 A, on light path, exist bubble 1705 during in, just do not carry out the laser radiation of next.Shown in Figure 73 B, confirming that with gas measuring diameter part 1261 bubble 1705 is flowed carrying by liquid and walks, bubble 1705 then carries out the irradiation of laser beam 1704 after disappearing from light path again.Control and make the limit carry out operation as described above repeatedly, the limit processes.Adopt the limit to carry out the way that operation as described above limit irradiates light is processed repeatedly, cut off wafer 1781.By means of this, just can prevent fine processing bits adhering to device layer 1782.

Under the situation of cutting into slices with slicer, on the chip sidewall, will produce damage, chip intensity is reduced.In addition, in thickness is zone below 50 microns, in the section of carrying out with slicer, also there is chip rupture, the problem that yield rate reduces.With respect to this, if cut into slices,, also can form slice and can not produce chip rupture even if be zone below 50 microns then at thickness with this method.In addition, also can in atmosphere, process with the processing unit (plant) shown in Figure 60.

(embodiment 33)

Figure 75 shows the manufacturing process of the semiconductor devices of embodiment of the present invention 33.Figure 75 A, 75B show with Laser Processing and remove the antireflection film 1793 on the alignment mark 1792 and the operation of photoresist 1794.Alignment mark 1792 adopts the way that is embedded in the dielectric film 1791 that forms on silicon wafer 1701 to form.

Add man-hour at light, gas measuring diameter part 1261 according to using CCD gamma camera 222 observed images, is measured the diameter of the bubble that takes place owing to laser radiation in the light machining area.Shown in Figure 75 A, on light path, exist bubble 1705 during in, just do not carry out the laser radiation of next.Shown in Figure 75 B, confirming that with gas measuring diameter part 1261 bubble 1705 is flowed carrying by liquid and walks, bubble 1705 then carries out the irradiation of laser beam 1704 after disappearing from light path again.Control and make the limit carry out operation as described above repeatedly, the limit processes.

The result that processing back SEM observes does not find that at processed substrate surface the processing of pin hole or photoresist film is considered to be worth doing, does not observe at the film of boundary portion office yet and peels off.Adopt to make not to be subjected to the way of processing like that, alignment mark is exposed and do not process defective because of the influence of the scattering that remains in the bubble on the light path.

In addition, also can in atmosphere, process with the processing unit (plant) shown in Figure 60.

(embodiment 34)

Global routing is that the circuit block ground of crossing on the chip extends, the upper strata wiring of supply global clock etc.Owing to be long distance wiring, so to seek to do one's utmost to reduce wiring delay, reduce resistance be important.Therefore, can use the last said smooth job operation of the generation of can suppress to disperse particle or pin hole effectively respond wellly.

Figure 76 A shows the manufacturing process of the semiconductor devices of embodiment of the present invention 34 to 76F.Figure 76 A shows the formation operation of the global routing of individual layer to 76F.

At first, shown in Figure 76 A, prepare to have the middle substrate that exists the pad 1802 of dielectric film 1801 ground formation on silicon wafer 1701.Then, shown in Figure 76 B, the whole face of dielectric film 1801 and pad 1802 is all formed Cu/Ta/TaN, the metal film 1803 of Pd/Ti/Ni etc. with covering.Then, shown in Figure 76 C, on metal film 1803, form resin insulating film 1804.

Then, shown in Figure 76 D, resin insulating film 1804 irradiates lights are processed, on the resin insulating film 1804 in the zone that has formed pad in the bottom, formed ditch.In process, with same before, gas measuring diameter part 1261 according to using CCD gamma camera 222 observed images, is measured the diameter of the bubble that takes place owing to laser radiation processing in machining area.Shown in Figure 73 A, on light path, exist bubble 1705 during in, just do not carry out the laser radiation of next.Shown in Figure 73 B, confirming that with gas measuring diameter part 1261 bubble 1705 is handled upside down away, bubble 1705 then carries out the irradiation of laser beam 1704 after disappearing from light path again.Control and make the limit carry out operation as described above repeatedly, the limit processes.

By means of carrying out such light processing, just can be formed on the good figure that pin hole or particle do not take place on the finished surface.

Then, shown in Figure 76 E,, in the ditch that on resin insulating film 1804, forms, imbed Cu, Au, scolder etc., form electrodeposited coating 1805 by means of metallide.At last, shown in Figure 76 F, remove resin insulating film 1804,, remove the metal film 1803 of sub-cloud with the acid solution of acetic acid, hydrochloric acid, nitric acid, diluted hydrofluoric acid etc. by means of organic solvent.By means of this, form overall metal line or metal bumps.

If adopt such method, then can on substrate, correctly form wiring and do not need to resemble and use the existing photo-mask process expensive exposure with mask or CMP.In addition, also can in atmosphere, process with the processing unit (plant) shown in Figure 60.

(embodiment 35)

Figure 77 A shows the manufacturing process of the semiconductor devices of embodiment of the present invention 35 to 77H.Figure 77 A shows the formation operation of the global routing of multilayer to 77H.At first, shown in Figure 77 A, prepare to have the middle substrate that exists the pad 1802 of dielectric film 1801 ground formation on silicon wafer 1701.Then, shown in Figure 77 B, on dielectric film 1801, form the 1st resin insulating film 1811.

Secondly, the local irradiating laser to the regulation of the 1st resin insulating film 1811 carries out light processing.Light processing, the device shown in available Figure 59 carries out.In light processing, shown in Figure 77 C, remove the 1st resin insulating film 1811 on the pad 1802, form the hole of passing through that pad exposes.

Then, shown in Figure 77 D, form Cu/Ta/TaN, the metallic film 1812 of Pd/Ti/Ni etc.Then, shown in Figure 77 E, on metallic film 1812, form the 2nd resin insulating film 1813.Then, irradiating laser on the 2nd resin insulating film 1813 carries out light processing once more.Device shown in for example available Figure 59 of light processing carries out.In light processing, shown in Figure 77 F, what be formed on that metallic film 1812 exposes on the bottom surface passes through hole and wiring trench.

Then, shown in Figure 77 G, in by hole and wiring trench, imbed formation Cu, Au etc., form electrodeposited coating 1814 by means of metallide.At last, shown in Figure 77 H, remove the 2nd resin insulating film 1813 by means of organic solvent.Then, adopt way to form metal line with acid solution etching metallic film 1812.

Way owing to forming like that more than adopting just can correctly form multilayer wiring with high reliability and need not use the high photo-mask process of manufacturing cost.

Go up said operation, in the formation of the prominent point of the scolder on the semiconductor devices face or prominent point of Au or global routing, wiring on the assembling substrate, also can use.

(embodiment 36)

In the last few years, as in semiconductor devices, forming through hole, the metal line of the Cu that in through hole, imbeds etc., the chip technology that semi-conductor chip is carried out on the chip of lamination has caused people's attention.

The sectional view of Figure 78 has illustrated the chip-shaped semiconductor devices on the chip of embodiment of the present invention 36.Shown in Figure 78, the 2nd chip 1830 is seized on both sides by the arms between the 1st chip 1820 that has metal bumps 1851,1852 on the pad 1823,1843 and the 3rd chip 1840.The 2nd chip 1830 has fills the perforation contact pin 1837 of going up metal in through hole.Adopt the way that the chip chamber of such lamination is coupled together, just can reduce length of arrangement wire significantly, can suppress wiring delay.In addition, in Figure 78, label the 1821,1831, the 1841st, silicon wafer, label the 1822,1832, the 1842nd, device layer, the 1835th, passivation layer, the 1836th, side wall insulating film.

Now, the perforate of through hole processing, available RIE carries out.But process velocity is slow, and productivity is bad.On the other hand, if adopt the way of irradiating laser continuously, form the hole that connects usefulness, then can produce pin hole or particle at the machining area periphery, device becomes to defective, this and previous said be same.

So same with embodiment 27, with the device shown in Figure 59, the limit confirms not exist on light path the gas limit of work in-process generation to carry out light processing.Owing to carrying out such processing, just can obtain good machining shape and can not produce pin hole or particle at machining area periphery.Meanwhile, the high speed of through hole formation and the reliability two of device action are stood.

Figure 79 A has illustrated the manufacturing process of the semiconductor devices of embodiment of the present invention 36 to the sectional view of 79H.Figure 79 A shows the operation example that forms through hole on the chip that uses in can the chip-shaped semiconductor devices on chip to 79H.At first, shown in Figure 79 A, prepare on silicon wafer 1831, to have formed the do not draw next semiconductor element and the substrate of silicon oxide layer 1861.Adopt the way of carrying out Laser Processing, on silicon oxide layer 1861 and silicon wafer 1831, form through hole 1862 with embodiment 27 same methods.Then, shown in Figure 79 B, on the surface of through hole 1862 and silicon oxide layer, form the 2nd silicon oxide layer 1836.

Then, shown in Figure 79 C, on through hole 1862 and the 2nd silicon oxide layer 1836, form metal film 1837.Then, shown in Figure 79 D, make the flattening surface of metal film 1837, in through hole 1862, form and connect contact pin 1837.Then, shown in Figure 79 E, connecting formation interlayer dielectric 1863 and pad 1834 on contact pin 1837 and the 2nd silicon oxide layer 1836.In addition, the label on the silicon wafer 1,831 1861,1836,1863 is equivalent to device layer 1832.

Then, shown in Figure 79 F, make the silicon substrate filming by means of grinding to wait.Then, shown in Figure 79 G, on the back side of silicon wafer 1831, form passivation layer.Then, shown in Figure 79 H, make passivation layer 1835 flattening surfaces so that perforation contact pin 1837 exposes the joint face between formation and the prominent point.

By means of this job operation, realize there is not pin hole or the good machining shape of the particle that disperses, improve the reliable in action of final semiconductor devices.

(embodiment 37)

In the present embodiment,, process this operation and describe as the photoresist film of the organic material that on the aluminium film, forms to the optical machining device shown in the embodiment 26.In addition, in the present embodiment, do not possess gas measuring diameter part 1261, and replace the irradiation position of the irradiation laser regularly that possesses control laser and the control section of at least one side in the sweep velocity between the substrate.

Use whirl coating, go up on the aluminium film that forms to the Semiconductor substrate (wafer) of diameter 300mm and apply photoresist film, then, the way of heat-treating forms the photoresist film of 1 micron thickness on the aluminium film.Secondly, with the 3rd higher hamonic wave (wavelength 355nm) of Q-Switch YAG laser, remove the photoresist film of the position of regulation.The energy density of 1 pulse of here being shone is decided to be 0.5J/cm ²In rayed, under the state of pure water that flowing, carry out.

The rayed zone is the slot-shaped of 80 microns wide 5 microns of length, adopts the way of scanning substrate maintaining body, and substrate and irradiates light are relatively scanned.Machining area is decided to be 80 microns * 100 microns, and scanning times is decided to be reciprocal 2 times.

The planimetric map of Figure 80 A, 80B shows the relation of machining area and liquid stream.Under the 1st scan condition, shown in Figure 80 A, 872 pairs of machining areas 871 of irradiation area move from left to right.At this moment, the direction of liquid stream 873a, being set so that becomes the direction opposite with the direction of scanning.Opposite owing to the direction that makes direction of scanning and liquid stream, the bubble that produces because of rayed is a side shifting downstream, impacts can not for the irradiation of next.Under the 2nd scan condition after arriving the end of machining area, shown in Figure 80 B, be set to and will switch, make the direction of liquid stream 873b, the direction that becomes for the 1st time scanning the time is opposite.The speed of current is decided to be 1m/s here.

Below, the process of asking best laser oscillation frequency is described.Establishing sweep velocity is that (micron/s), the oscillation frequency of laser are under the situation of f (1/s) to v, and the displacement x of each pulse can represent with x=v/f.The displacement x of each pulse is more little, and then overlapping irradiation number of times is just many more, so irradiated energy just becomes greatly.On the other hand, if displacement x is big more, then irradiated energy just reduces.

In addition, make under laser shines with the situation of removing processing of films repeatedly, frequency f is big more, then can promote to remove dereaction by means of regenerative effect more.The inventor etc. are conceived to remove with frequency the v/f of the displacement x of above-mentioned each pulse ²In other words, inventor waits and to think V/f ²More little, the rayed reaction is fast more.

Figure 81 is to above-mentioned v/f ², the defective area in machining area after the processing of machining area is drawn as the experimental result of curve.Here, sweep velocity is decided to be 1000 microns/sec and 80 microns/sec, and the oscillation frequency f of laser is changed.By Figure 81 as can be known, defective area is little and show the v/f of good processing characteristics ²Scope be substantially 6.0 * 10 ^-5(micron sec) above 1.0 * 10 ^-3Below (micron sec).Its reason is: at v/f ²In the little zone, as mentioned above,, become so this photoresist film as mask material goes bad and to be defective because rayed reaction is too fast.On the other hand, at V/f ²In the big zone, rayed underaction conversely, removing of photoresist film is insufficient, becomes to be defective.

By the result of Figure 81 as can be known, get good v/f ²The center of scope, v/f ²Condition be decided to be 3.0 * 10 ^-4(micron sec).When sweep velocity v is decided to be 1000 microns/sec, obtain oscillation frequency f=1825Hz.

In addition, under the situation of carrying out under this condition, owing to, carried apace toward downstream one side by current at the bubble that produces with irradiation in front, bubble does not exist during secondarily irradiation, and can not produce the processing that produces because of bubble so can carry out good processing defective.

Under these conditions, after the process finishing of the photoresist film that carries out with laser radiation, wafer being dipped in the etching liquid of aluminium, is mask with the photoresist film, optionally etching aluminium film.Then, carried out removing as the photoresist film of mask.With the state after the observation by light microscope processing, can confirm flawless good graphical.

As mentioned above, adopt the v/f that removes the displacement x of each pulse with frequency f ²The way that is decided to be above-mentioned scope just can realize flawless good graphical.

In addition, in the present embodiment,, be not limited to this though sweep velocity v is decided to be 1000 microns/sec.As long as can be in the hope of satisfying v/f ²The sweep velocity of optimum value and the combination of oscillation frequency f get final product.From the processing reduction in processing timeization, sweep velocity is greatly desirable.

In the present embodiment,, be not limited to this though gap width is decided to be 5 microns.Even if the width in slit is also can be with the same effect of experimental verification in 2 microns to 20 microns the scope.From the viewpoint of machining shape, the scope that gap width is 2 microns to 5 microns is desirable.

In addition, in the present embodiment, though as processing with light source use be the 3rd higher hamonic wave of Q-Switch YAG laser, light source is not limited to this, also can be the pulse laser and the light of the 4th higher hamonic wave (wavelength 266nm) of Q-Switch YAG laser or KrF excimer laser etc.

In addition, in the present embodiment,, be not limited to this, also can use other organic membrane though explanation is the situation of the photoresist film on the processing aluminium film.

In addition, in the present embodiment, though the energy density of each pulse is decided to be 0.5J/cm ², but be not limited to this.Employing is decided to be the way that can carry out flawless patterned value well to the energy density of each pulse, just can obtain same effect.

(embodiment 38)

In the present embodiment, be used in the optical machining device that the device described in the embodiment 26 constitutes, the example of all processing that is considered to necessary in the manufacture process that is applicable to semiconductor devices is described.

Adopt whirl coating, the last coating of Semiconductor substrate (wafer) the coating-type carbon film to diameter 300mm forms thickness 300nm carbon film.Secondly, with the 3rd higher hamonic wave (wavelength 355nm) of Q-Switch YAG laser, remove the carbon film of the position of regulation.The energy density of 1 pulse of here being shone is decided to be 0.35J/cm ²In rayed, under the state of pure water that flowing, carry out.

The zone of shining shown in Figure 82, for irradiation area, is decided to be the slot-shaped irradiation area 881 of width a (micron) and length b (micron).Make the size variation of the irradiation area 881 of the condition that has changed width a (micron) and length b (micron), the particle weight behind 1 pulse irradiation is estimated.

The area summation that Figure 83 shows particle is to can be with the experimental result of the summation of the length on the limit of the slot-shaped irradiation areas of 2 * (a+b) expressions (below, be called total prolongation on limit).

Shown in Figure 83, always being extended in the zone more than 180 microns of limit, the area that becomes macroparticle along with total prolongation on limit will increase.In addition, in the zone below 180 microns, the change list of total prolongation of particle area opposite side reveals the tendency that reduces significantly in total prolongation on limit.In other words, learnt by experimental result: in order to carry out the few processing of particle, total prolongation on limit is being desirable below 180 microns.

By this result as can be known, irradiation area is decided to be wide 5 microns, length and has carried out the processing carried out with rayed for 80 microns.This illuminate condition and since the limit always be extended for 170 microns, so satisfy above-mentioned condition.

In this irradiation area, adopt the way of scanning substrate maintaining body, substrate and irradiates light are relatively scanned.Machining area is decided to be 80 microns * 100 microns, and scanning times is decided to be reciprocal 2 times.Sweep velocity v is decided to be 600 microns/sec, and oscillation frequency f is decided to be 1414Hz.The relation of direction of scanning and current and embodiment 37 are same, so detailed explanation is here omitted.

With respect under the situation of carrying out same processing with irradiation area for the condition of 40 microns of the width, 80 microns of the length that do not satisfy above-mentioned condition, a plurality of particles taking place, under the situation of processing, then can obtain the extremely few good processing characteristics of particle with the irradiation area of 5 microns of width that satisfy above-mentioned condition, 80 microns of length.

As mentioned above, adopting becomes way below 180 microns to total prolongation work on the limit of slot-shaped irradiation area, just can realize the good processing that particle is extremely few.

In addition, in the present embodiment, though sweep velocity v is decided to be 600 microns/sec, be not limited to this, suitable change is possible.

In addition, though in the present embodiment, make to become the irradiation area that always is extended for 80 microns of 5 microns length of width of 170 microns on limit, be not limited to this.Particle limit still less always to be extended for 160 microns be desirable.

In addition, in the present embodiment, though is the 3rd higher hamonic wave of Q-Switch YAG laser as processing with light source use, but light source is not limited to this, also can be pulse laser and light, ion beam or the electron beam of the 4th higher hamonic wave (wavelength 266nm) of Q-Switch YAG laser or KrF excimer laser etc.

In the present embodiment, though explanation is the situation of processing carbon film, be not limited to this, also can be suitable for other material.

In addition, in the present embodiment, though the energy density of 1 pulse is decided to be 0.35J/cm ², still, be not limited to this.Employing is decided to be the way that can carry out flawless patterned value well to the energy density of 1 pulse, can obtain same effect.

In the present embodiment,, be not limited to this though what use as slot-shaped irradiation area is the irradiation area of rectangle (Figure 84 A).For example, also can use the irradiation area of Figure 84 B to the shape shown in the 84D.In this case, the summation of the length on limit in the present embodiment just is equivalent to profile length.

In addition, also can use the method for the present embodiment for the job operation of explanation in embodiment 23 to 25.In other words, the profile length that it is desirable to an irradiation area (process unit) is done to become below 180 microns.

In addition, the present invention is not limited to above-mentioned each embodiment, the implementation phase in to carry out all distortion in the scope that does not break away from its main idea be possible.

For the those skilled in the art of those these specialties, also exist other advantage and distortion.Therefore, the present invention is not limited to above-mentioned accompanying drawing and explanation with regard to its more wide form.In addition, just as appended technical scheme and equivalent thereof limit, many distortion can also be arranged and do not depart from the aim of total invention.

Claims

1. one kind to each process unit irradiation beam, selects the job operation of the machining area of the processing of films that processing forms on substrate, comprising:

Process unit's irradiation beam to above-mentioned substrate;

On the light path of above-mentioned beam, observe the gas that the irradiation because of above-mentioned beam produces;

Measure the size of above-mentioned gas;

Under the size of the above-mentioned gas situation littler, above-mentioned processing of films is shone the beam of next than setting.

2. job operation according to claim 1 is characterized in that: the limit is radiated at the irradiation area beam littler than above-mentioned machining area on the above-mentioned substrate, and the limit makes above-mentioned irradiation area relatively move above-mentioned substrate.

3. job operation according to claim 1 is characterized in that: the shape of the irradiation area of the beam on the above-mentioned substrate is slot-shaped or point-like for above-mentioned machining area.

4. job operation according to claim 1 is characterized in that: making liquid or gas under the state at the irradiation area upper reaches of the above-mentioned beam on the above-mentioned substrate, carry out the irradiation of above-mentioned beam.

5. job operation according to claim 1 is characterized in that: above-mentioned beam is intrafascicular any of laser, light, charged particle.

6. job operation according to claim 1 is characterized in that: above-mentioned processing of films is antireflection film, photoresist film, polyimide film, silicon nitride film, silicon carbonized film, metal film or resin insulating film.

7. job operation according to claim 1 is characterized in that: the constituting of above-mentioned substrate possesses alignment mark or the offset measurement markers that forms below the above-mentioned machining area of above-mentioned processing of films.

8. job operation according to claim 1 is characterized in that: in the profile length of the irradiation area of the beam on the above-mentioned substrate below 180 microns or 180 microns.

9. the machining area to substrate shines the job operation that beam is optionally processed above-mentioned machining area, comprising:

To the liquid of above-mentioned machining area flow velocity V, the unit of this flow velocity V is little meter per second;

Machining area to aforesaid liquid flows shines above-mentioned beam, and the oscillation frequency of this beam is Z, and the unit of this frequency Z is 1/ second, and this beam is W at the width of the flow direction of aforesaid liquid, and the unit of this width is a micron;

Control and make above-mentioned flow velocity V, width W and oscillation frequency Z satisfy following relation:

V &GreaterEqual; 6 \times \sqrt{\frac{W}{2}} \times Z

10. job operation according to claim 9, wherein the limit is radiated at the irradiation area beam littler than above-mentioned machining area on the above-mentioned substrate, and the limit makes above-mentioned irradiation area relatively move above-mentioned substrate.

11. job operation according to claim 9, the shape of the irradiation area of the beam on the wherein above-mentioned substrate is slot-shaped or point-like for above-mentioned machining area.

12. job operation according to claim 9 wherein making liquid or gas under the state at the irradiation area upper reaches of the above-mentioned beam on the above-mentioned substrate, is carried out the irradiation of above-mentioned beam.

13. that to be laser, light, charged particle intrafascicular is any for job operation according to claim 9, wherein above-mentioned beam.

14. job operation according to claim 9 is characterized in that above-mentioned processing of films is antireflection film, photoresist film, polyimide film, silicon nitride film, silicon carbonized film, metal film or resin insulating film.

15. job operation according to claim 9 is characterized in that constituting of above-mentioned substrate possesses alignment mark or the offset measurement markers that forms below the above-mentioned machining area of above-mentioned processing of films.

16. a job operation is the machining area of the organic membrane that forms is removed in selection on substrate a job operation, it is characterized in that:

At oscillation frequency f, the unit of this frequency f is 1/ second, and the energy density of each pulse can remove under the condition of above-mentioned organic membrane, and the limit is radiated at the shot shape beam littler than above-mentioned machining area on the above-mentioned substrate,

The limit makes the irradiation position of above-mentioned beam with speed v, and the unit of this speed v is little meter per second, above-mentioned substrate is relatively moved, simultaneously

Above-mentioned oscillation frequency f and speed v satisfy following relation:

6.0 \times 10^{- 5} \leq \frac{v}{f^{2}} \leq 1.0 \times 10^{- 3}

17. job operation according to claim 16 is characterized in that: the width of the above-mentioned shot shape of the relative moving direction of the irradiation position of above-mentioned beam, at the 2-20 micron.

18. a processing unit (plant) of selecting to process the machining area of the processing of films that forms on substrate comprises:

The substrate retaining part that keeps above-mentioned substrate,

Produce the electron gun of beam optionally reduce or to remove the part of above-mentioned processing of films,

Be configured on the optical axis of above-mentioned beam, be shaped with the shaped portion of the beam of above-mentioned light source generation,

The sweep test that the beam that uses this shaped portion to be shaped relatively scans above-mentioned substrate;

According to the direction of scanning of the beam that is undertaken by this sweep test, the limit changes the flow direction of liquid, the limit to the machining area surface of above-mentioned substrate continuously the liquid of feed fluid supply with part.

19. processing unit (plant) according to claim 18, wherein above-mentioned shaped portion makes the light from above-mentioned light source be shaped so that the light of same shape is in arrangement periodically on above-mentioned direction of scanning on the above-mentioned substrate.

20. processing unit (plant) according to claim 18 is characterized in that: above-mentioned shaped portion possesses a plurality of opening masks that formed opening respectively.

21. processing unit (plant) according to claim 20, wherein above-mentioned shaped portion possesses the opening mask of the opening that has formed slot-shaped or point-like, and above-mentioned sweep test moves the opening mask that has formed this opening.

22. processing unit (plant) according to claim 18 wherein also possesses the observation part on surface that work in-process is observed the above-mentioned machining area of above-mentioned substrate.

23. processing unit (plant) according to claim 22 is characterized in that: possess according to the gray shade scale variation with the observed observation of above-mentioned observing system elephant, the inspection part that identification processing is unusual.

24. processing unit (plant) according to claim 22, wherein also possess according to resembling with the observed observation of above-mentioned observing system, the distribution of the progress of the processing of identification processing of films, distribute and irradiation position the exposure control section that the exposure of beam is controlled according to the processing progress of the processing of films of being discerned.

25. processing unit (plant) according to claim 18, wherein aforesaid liquid is supplied with part, also possesses:

Set the retainer that is configured in the substrate on the above-mentioned substrate retaining part,

Be connected to the 1st pipeline on the above-mentioned retainer,

Make and the 1st pipeline gets up above-mentioned substrate clamping to be connected to the 2nd pipeline on the above-mentioned retainer like that,

Supply with aforesaid liquid with direction of scanning from a side the above-mentioned substrate of pipeline in being provided in above-mentioned retainer, discharge the liquid feeder that has supplied to the liquid on the above-mentioned substrate from the opposing party's pipeline according to light.

26. processing unit (plant) according to claim 18, wherein aforesaid liquid is supplied with part, also possesses:

The current feeder of the escape hole that is provided with the discharge opening of the liquid that spues and is provided with opposite to each other with above-mentioned discharge opening and

The rotating part that this current feeder is rotated in above-mentioned substrate surface.

27. processing unit (plant) according to claim 18 wherein also possesses the processing of films that forms above-mentioned processing of films on the interarea of above-mentioned substrate and forms part.

28. a processing unit (plant) of optionally processing the machining area of the processing of films that forms on substrate comprises:

The substrate retaining part that keeps above-mentioned substrate,

Be configured on the optical axis of above-mentioned beam, be shaped, shine the shaped portion of the beam that the shot shape on the above-mentioned substrate arranges periodically with the beam of above-mentioned electron gun generation,

Make above-mentioned beam at above-mentioned cycle or the following sweep test that relatively scans for substrate.

29. processing unit (plant) according to claim 28, wherein above-mentioned shaped portion possesses a plurality of opening masks that form opening respectively.

30. processing unit (plant) according to claim 29, wherein above-mentioned shaped portion possesses the opening mask of the opening that has formed slot-shaped or point-like, and above-mentioned sweep test moves the opening mask that has formed this opening.

31. processing unit (plant) according to claim 28 wherein also possesses the observation part on surface that work in-process is observed the above-mentioned machining area of above-mentioned substrate.

32. processing unit (plant) according to claim 31 wherein also possesses according to the gray shade scale variation with the observed observation of above-mentioned observing system elephant, the inspection part that identification processing is unusual.

33. processing unit (plant) according to claim 31, wherein also possess according to resembling with the observed observation of above-mentioned observing system, the distribution of the progress of the processing of identification processing of films, distribute and irradiation position the exposure control section that the exposure of beam is controlled according to the processing progress of the processing of films of being discerned.

34. processing unit (plant) according to claim 28 wherein also possesses the limit and according to the direction of scanning of the beam of above-mentioned sweep test the flow direction of liquid is changed, the limit continuously on the machining area surface of above-mentioned substrate the liquid of feed fluid supply with part.

35. processing unit (plant) according to claim 34 is characterized in that aforesaid liquid supply part, also possesses:

Be connected to the 1st pipeline on the above-mentioned retainer,

Aforesaid liquid is supplied with from a side the above-mentioned substrate of pipeline in being provided in above-mentioned retainer in direction of scanning according to light, discharges the liquid feeder that has supplied to the liquid on the above-mentioned substrate from the opposing party's pipeline.

36. processing unit (plant) according to claim 34, wherein aforesaid liquid is supplied with part, also possesses:

37. processing unit (plant) according to claim 27 wherein also possesses the processing of films that forms above-mentioned processing of films on the interarea of above-mentioned substrate and forms part.

38. a processing unit (plant) is characterized in that: it constitutes possesses:

The retaining part that keeps substrate,

The illuminated portion of beam of a part of the processing of films of above-mentioned substrate is removed in generation,

On the light path of above-mentioned beam, observe the observation part of the gas that is produced by abrasion because of the above-mentioned processing of films of the irradiation of above-mentioned beam,

Observe the observations of part according to this, control is from the irradiation control section regularly of the above-mentioned beam of above-mentioned illuminated portion irradiation.

39. according to the described processing unit (plant) of claim 38, it is characterized in that: the size of above-mentioned gas is partly measured in above-mentioned observation, under the situation of measured size, perhaps do not having just to shine above-mentioned beam under the situation of gas from above-mentioned illuminated portion less than setting.

40. according to the described processing unit (plant) of claim 39, it is characterized in that: constituting of above-mentioned observation part possesses:

Obtain above-mentioned beam irradiation area image the observation part and

Measure portion according to the size of the gray shade scale measure of the change above-mentioned gas of the image of obtaining with this observation part.

41. according to the described processing unit (plant) of claim 38, it is characterized in that: above-mentioned beam is the first-harmonic or the higher hamonic wave of Q-Switch Nd-YAG laser.

42., it is characterized in that also possessing the liquid feeder of feed fluid on the machining area of above-mentioned substrate according to the described processing unit (plant) of claim 38.

43., it is characterized in that also possessing according to the described processing unit (plant) of claim 38:

Obtain the observation part of image of the irradiation area of above-mentioned beam,

According to the image from obtaining with this observation part, the control section of the irradiation of above-mentioned beam is controlled in having or not of the residue of judgement processing of films and processing of films according to result of determination.

44. according to the described processing unit (plant) of claim 38, it is characterized in that: also possess on the light path that is configured in above-mentioned beam, the above-mentioned beam that is shaped is to the shaped portion of irradiation beam on a plurality of positions of arranging periodically on the above-mentioned substrate.

45., it is characterized in that: on the light path of above-mentioned beam, possess the profile length at the irradiation area of the beam on the above-mentioned substrate is taken as shaped portion below 180 microns or 180 microns according to the described processing unit (plant) of claim 38.

46. a processing unit (plant) of selecting to process the machining area of the processing of films that forms on substrate comprises:

The retaining part that keeps above-mentioned substrate,

To being set in each process unit in the above-mentioned machining area, shine the illuminated portion of beam, wherein the oscillation frequency of this beam is Z, the unit of Z is 1/ second, and this beam is W at the width of a direction of the irradiation area of above-mentioned processing of films, and the unit of W is a micron

On the machining area of above-mentioned processing of films, on an above-mentioned direction, supply with the supply unit of the liquid of flow velocity V,

Make above-mentioned oscillation frequency Z, width W and flow velocity V satisfy following relation:

V &GreaterEqual; 6 \times \sqrt{\frac{W}{2}} \times Z

To above-mentioned oscillation frequency Z, any one control section controlled among width W and the flow velocity V.

47. according to the described processing unit (plant) of claim 46, wherein above-mentioned beam is the first-harmonic or the higher hamonic wave of Q-SwitchNd-YAG laser.

48., wherein also possess the liquid feeder of feed fluid on the machining area of above-mentioned substrate according to the described processing unit (plant) of claim 46.

49., wherein also possess according to the described processing unit (plant) of claim 46:

50. according to the described processing unit (plant) of claim 46, wherein also possess on the light path that is configured in above-mentioned beam, the above-mentioned beam that is shaped is to the shaped portion of irradiation beam on a plurality of positions of arranging periodically on the above-mentioned substrate.

51., wherein on the light path of above-mentioned beam, possess the profile length at the irradiation area of the beam on the above-mentioned substrate be taken as shaped portion below 180 microns or 180 microns according to the described processing unit (plant) of claim 46.

52. a processing unit (plant) of selecting to process the machining area of the organic membrane that forms on substrate comprises:

The retaining part that keeps above-mentioned substrate;

To above-mentioned substrate, the illuminated portion of irradiation beam, the shot shape of this beam on above-mentioned substrate is littler than above-mentioned machining area, and oscillation frequency is f, and the unit of f is 1/ second, and the energy density of this each pulse of beam can be removed above-mentioned organic membrane;

Above-mentioned substrate is relatively scanned the sweep test of the irradiation position of above-mentioned beam with speed v;

Make and satisfy above-mentioned oscillation frequency f and speed v

6.0 \times 10^{- 5} \leq \frac{v}{f^{2}} \leq 1.0 \times 10^{- 3}

Relation ground, the control section that at least one side in above-mentioned illuminated portion and the sweep test is controlled.

53. according to the described processing unit (plant) of claim 52, the width of the above-mentioned shot shape of the relative moving direction of the irradiation position of above-mentioned beam wherein is at 2 microns-20 microns.

54. according to the described processing unit (plant) of claim 51, wherein above-mentioned beam is the first-harmonic or the higher hamonic wave of Q-SwitchNd-YAG laser.

55. according to the described processing unit (plant) of claim 52, it is characterized in that: the liquid feeder that also possesses feed fluid on the machining area of above-mentioned substrate.

56., it is characterized in that: also possess according to the described processing unit (plant) of claim 52:

57. according to the described processing unit (plant) of claim 52, wherein also possess on the light path that is configured in above-mentioned beam, the above-mentioned beam that is shaped is to the shaped portion of irradiation beam on a plurality of positions of arranging periodically on the above-mentioned substrate.

58., wherein on the light path of above-mentioned beam, possess the profile length at the irradiation area of the beam on the above-mentioned substrate be taken as shaped portion below 180 microns or 180 microns according to the described processing unit (plant) of claim 52.

59. a job operation comprises:

On substrate, form the 1st film,

On the 1st film, form the 2nd film,

Above-mentioned substrate is selected irradiation the 1st beam,

At least a portion of irradiation area of above-mentioned the 1st beam of above-mentioned the 2nd film is kept on the limit, and the processing of above-mentioned the 1st film is carried out on the limit,

The processing of wherein above-mentioned the 1st film makes the gasification of the 1st film, or transmitance is changed.

60. according to the described job operation of claim 59, it is characterized in that: above-mentioned the 1st film is an antireflection film.

61. according to the described job operation of claim 59, it is characterized in that: above-mentioned the 2nd film is a photoresist film.

62., it is characterized in that according to the described job operation of claim 59:

Above-mentioned the 2nd film is an intermediate coat,

Also be included on the above-mentioned intermediate coat and form photoresist film.

63., it is characterized in that according to the described job operation of claim 62: the formation of above-mentioned photoresist film, after the processing of having carried out above-mentioned the 1st film, carry out.

64. according to the described job operation of claim 62, it is characterized in that: above-mentioned intermediate coat is a silicon oxide film.

65. according to the described job operation of claim 59,

Wherein above-mentioned substrate has alignment mark, and above-mentioned irradiation area is the zone of containing above-mentioned alignment mark,

Comprise: after the processing of having carried out above-mentioned the 1st film,

Irradiation the 2nd beam on above-mentioned alignment mark by the beam from above-mentioned alignment mark reflection, is obtained the positional information of this alignment mark,

Based on this positional information, irradiation the 3rd beam on above-mentioned photoresist film forms desirable latent image figure on above-mentioned photoresist film.

66. according to the described job operation of claim 65, it is characterized in that: the wavelength of above-mentioned the 2nd beam and the 3rd beam is same.

67. according to the described job operation of claim 65, it is characterized in that: the irradiation of the irradiation of the 2nd beam and the 3rd beam is carried out with same optical system.

68. according to the described job operation of claim 65, wherein above-mentioned the 1st beam is the light that contains the wavelength that the 1st film absorbs.

69. according to the described job operation of claim 59, the processing of wherein above-mentioned the 1st film comprises:

The 1st beam of the 1st shape is relatively scanned above-mentioned substrate,

To the more past area inside of scanning area, shine the 1st beam of the 2nd shape than the 1st beam of above-mentioned the 1st shape.

70. the manufacture method of a semiconductor devices comprises:

Preparation has formed the matrix of alignment mark in Semiconductor substrate or on the Semiconductor substrate,

On above-mentioned matrix, form antireflection film,

On above-mentioned antireflection film, form photoresist film,

The above-mentioned photoresist film of the machining area that contains the zone that has formed above-mentioned alignment mark is selected the irradiation beam,

At least a portion of the above-mentioned photoresist film of above-mentioned machining area is kept on the limit, and the processing of above-mentioned antireflection film is carried out on the limit,

After the processing of above-mentioned antireflection film, above-mentioned matrix is transported in the exposure device,

Use above-mentioned alignment mark, aim at adjustment,

After above-mentioned aligning is adjusted, on above-mentioned photoresist film, form the latent image of above-mentioned semiconductor circuit,

Above-mentioned photoresist film is developed, forms the photoresist figure,

Carry out the processing of above-mentioned matrix with above-mentioned photoresist figure,

The wherein processing of above-mentioned antireflection film makes the antireflection film gasification, or transmitance is changed.

71. the manufacture method of a semiconductor devices comprises:

On above-mentioned matrix, form antireflection film and intermediate coat,

The above-mentioned intermediate coat of the machining area that contains the zone that has formed above-mentioned alignment mark is selected the irradiation beam,

At least a portion of the above-mentioned intermediate coat of above-mentioned machining area is kept on the limit, and the processing of above-mentioned antireflection film is carried out on the limit,

After the processing of above-mentioned antireflection film, on above-mentioned intermediate coat, form photoresist film,

The above-mentioned matrix that has formed above-mentioned photoresist film is transported in the exposure device,

In above-mentioned exposure device, use above-mentioned alignment mark, aim at adjustment,

The above-mentioned photoresist film that has formed above-mentioned latent image is developed, forms the photoresist figure,

72. one kind all shines beam to each process unit, the job operation with the machining area of selecting the processing of films that processing forms on substrate comprises:

Ask catoptrical intensity distributions from above-mentioned processing of films,

Will be according to the decision of the intensity distributions of above-mentioned intensity of reflected light to the energy of the beam of above-mentioned each process unit's irradiation,

To above-mentioned each process unit, shine above-mentioned beam successively according to the energy that is determined.

73. according to the described job operation of claim 72, it is characterized in that: above-mentioned process unit is point-like or rectangular shape.

74. according to the described job operation of claim 72,

The wherein decision of the energy of above-mentioned each process unit comprises:

According to above-mentioned intensity of reflected light and the corresponding relation between the tectonic information of the basilar memebrane that the bottom of above-mentioned processing of films forms, determine the structure of the above-mentioned basilar memebrane of each process unit,

According to the structure of predefined basilar memebrane and the corresponding relation between the damage generation irradiation energy, make that being no more than damage produces irradiation energy like that, determines the irradiation energy of each process unit.

75. according to the described job operation of claim 72,

According to predefined intensity of reflected light and the corresponding relation between the tectonic information of the basilar memebrane that the bottom of above-mentioned processing of films forms, determine the structure of above-mentioned basilar memebrane,

According to the complex index of refraction of irradiated beam of the structure of the above-mentioned basilar memebrane of decision, consider the calculating of multiple interference,

According to result of calculation, the energy that makes above-mentioned basilar memebrane accept can not surpass damage and produce irradiation energy like that, the decision irradiation energy.

76. one kind to each process unit irradiation beam, the job operation with the machining area of selecting the processing of films that processing forms on substrate comprises:

Above-mentioned intensity of reflected light distributive sorting is become each equal substantially zone of intensity of reflected light,

Set process unit according to institute's classified regions,

Will be according to intensity of reflected light decision to the energy of the beam of each process unit's irradiation,

To above-mentioned each process unit, shine beam successively based on the energy that is determined.

77. according to the described job operation of claim 76,

78. according to the described job operation of claim 76,

79., it is characterized in that: with the secondary process unit of the further sectionalization of above-mentioned process unit is processed according to the described job operation of claim 76.

80. according to the described job operation of claim 79, it is characterized in that: above-mentioned secondary process unit is point-like or rectangular shape.

81. a processing unit (plant) is a processing unit (plant) of optionally processing the machining area of the processing of films that forms on substrate, it is characterized in that possessing:

The retaining part that keeps above-mentioned substrate,

To being set in each process unit in the above-mentioned machining area, shine the illuminated portion of beam,

To above-mentioned each process unit's illumination observation light, detect test section from the intensity of reflected light of above-mentioned process unit,

According to the reflection strength that is detected, setting will be to the setting section of the energy of the beam of each process unit irradiation,

According to the energy of setting with this setting section, control is from the control of energy part of above-mentioned illuminated portion to the beam of each process unit's irradiation.

82. 1 described processing unit (plant) is characterized in that in the light source of above-mentioned laser beam according to Claim 8, use be the first-harmonic or the higher hamonic wave of Q-Switch Nd-YAG laser.

83. 1 described processing unit (plant) is characterized in that: the liquid feeder that also possesses feed fluid on the machining area of above-mentioned substrate according to Claim 8.

84. 1 described processing unit (plant) according to Claim 8 is characterized in that: also possess:

85. the described processing unit (plant) of claim 81 is characterized in that also possessing on the light path that is configured in above-mentioned beam, the above-mentioned beam that is shaped is to the shaped portion of irradiation beam on a plurality of positions of arranging periodically on the above-mentioned substrate.