JPH0811772B2 - Surface processing method of polymer moldings using laser - Google Patents
Surface processing method of polymer moldings using laserInfo
- Publication number
- JPH0811772B2 JPH0811772B2 JP1199642A JP19964289A JPH0811772B2 JP H0811772 B2 JPH0811772 B2 JP H0811772B2 JP 1199642 A JP1199642 A JP 1199642A JP 19964289 A JP19964289 A JP 19964289A JP H0811772 B2 JPH0811772 B2 JP H0811772B2
- Authority
- JP
- Japan
- Prior art keywords
- laser
- irradiated
- processing method
- aromatic
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229920000642 polymer Polymers 0.000 title claims description 25
- 238000003672 processing method Methods 0.000 title claims description 10
- 238000000465 moulding Methods 0.000 title claims description 3
- 125000003118 aryl group Chemical group 0.000 claims description 28
- 239000007788 liquid Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 13
- 230000001678 irradiating effect Effects 0.000 claims description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 9
- 238000000354 decomposition reaction Methods 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- 230000000877 morphologic effect Effects 0.000 description 5
- 239000012535 impurity Substances 0.000 description 4
- 239000004695 Polyether sulfone Substances 0.000 description 3
- 229920006393 polyether sulfone Polymers 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920006290 polyethylene naphthalate film Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000001464 adherent effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- KYKAJFCTULSVSH-UHFFFAOYSA-N chloro(fluoro)methane Chemical compound F[C]Cl KYKAJFCTULSVSH-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- CPBQJMYROZQQJC-UHFFFAOYSA-N helium neon Chemical compound [He].[Ne] CPBQJMYROZQQJC-UHFFFAOYSA-N 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- -1 krypton ion Chemical class 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
- B29C59/16—Surface shaping of articles, e.g. embossing; Apparatus therefor by wave energy or particle radiation, e.g. infrared heating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C35/00—Heating, cooling or curing, e.g. crosslinking or vulcanising; Apparatus therefor
- B29C35/02—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould
- B29C35/08—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation
- B29C35/0805—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using electromagnetic radiation
- B29C2035/0827—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using electromagnetic radiation using UV radiation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C35/00—Heating, cooling or curing, e.g. crosslinking or vulcanising; Apparatus therefor
- B29C35/02—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould
- B29C35/08—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation
- B29C35/0805—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using electromagnetic radiation
- B29C2035/0838—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using electromagnetic radiation using laser
Landscapes
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
- Lasers (AREA)
- Laser Beam Processing (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
Description
【発明の詳細な説明】 （技術分野） 本発明は、紫外レーザーを用いる芳香族系高分子成形
物の表面加工方法に関するものである。TECHNICAL FIELD The present invention relates to a surface processing method for an aromatic polymer molded article using an ultraviolet laser.
（従来技術及びその問題点） S.ラザレらは（S.Lazare.R.Srinivasan.J.Phys.Che
m.,Vol.90,2124（1986））、高分子フィルムの表面を、
エキシマーレーザーなどの高強度紫外レーザーで照射す
ると、その照射部位は照射直後に容易に改質され、現像
工程等の後処理を行なうことなく、直接的に形態学的な
凹凸が形成されることを報告している。このように、紫
外レーザーを用いた高分子表面の加工法は、精度良く、
高速で行なうことができ、また、レーザーの照射条件を
制御することで、照射高分子表面の構造特性や機能性を
向上させることができるという特徴があり、多彩な表面
反応を制御良く行うことが可能な手法である。しかしな
がら、高分子の化学構造の中に芳香環を有する芳香族系
高分子の場合では、一般にその加工時にすす状の付着性
分解物を発生しやすく、特に、長波長のレーザーを用い
た場合にその分解物の発生は顕著となる。大気中で加工
を行なった時、この分解物の一部は、成形物表面に戻り
非照射部分に堆積し、さらに、真空中では、窓や真空容
器の内壁に付着し、加工効率が低下するという欠点があ
る。この欠点を解消するために、G.コーレンらは（G.Ko
ren and J.J.Donelon,Appl.Phys.,Vol.B45,45（198
8））、ポリイミドに対し、XeClエキシマレーザーを照
射後、炭酸ガスレーザーを照射する、二段照射法によっ
て、発生したレーザー照射分解物を除去している。ま
た、R.J.フォンガットフェルドらは（R.J.vonGutfeld a
nd R.Srinivasan.Appl.Phys.,Vol.51,15（1987））、レ
ーザー照射部の周囲に電極を設け、その分解物を収集し
ている。しかし、これらの方法は、工程が複雑になると
いう欠点がある。(Prior art and its problems) S. Lazare et al. (S. Lazare. R. Srinivasan. J. Phys. Che
m., Vol.90,2124 (1986)), the surface of the polymer film,
When irradiated with a high-intensity ultraviolet laser such as an excimer laser, the irradiated site is easily modified immediately after irradiation, and morphological unevenness is directly formed without performing post-treatment such as a development process. Reporting. Thus, the processing method of the polymer surface using the ultraviolet laser is highly accurate,
It has the feature that it can be performed at high speed and that the structural characteristics and functionality of the irradiated polymer surface can be improved by controlling the laser irradiation conditions. It is possible to perform various surface reactions with good control. This is a possible method. However, in the case of an aromatic polymer having an aromatic ring in the chemical structure of the polymer, soot-like adherent decomposed products are generally likely to be generated during the processing, especially when a long-wavelength laser is used. The generation of the decomposition products becomes significant. When processed in the atmosphere, part of this decomposed product returns to the surface of the molded product and accumulates on the non-irradiated part. Furthermore, in vacuum, it adheres to the window and the inner wall of the vacuum container, reducing the processing efficiency. There is a drawback that. To overcome this drawback, G. Koren and colleagues (G.Ko
ren and JJDonelon, Appl.Phys., Vol.B45,45 (198
8)), The laser irradiation decomposition product generated is removed by the two-step irradiation method in which the polyimide is irradiated with the XeCl excimer laser and then the carbon dioxide laser is irradiated. In addition, RJ von Gutfeld a
nd R. Srinivasan.Appl.Phys., Vol.51,15 (1987)), an electrode is installed around the laser irradiation part and the decomposed product is collected. However, these methods have a drawback that the process is complicated.
（発明の課題） 本発明は、紫外レーザーを用いて芳香族系高分子成形
物の表面加工を行う場合に発生するレーザー照射分解物
に起因する不都合な問題を解決することをその課題とす
る。(Problem of the Invention) The object of the present invention is to solve an inconvenient problem caused by a laser-irradiated decomposition product which occurs when the surface of an aromatic polymer molded article is processed by using an ultraviolet laser.
（課題を解決するための手段） 本発明者らは、前記課題を解決すべく鋭意研究を重ね
た結果、本発明を完成するに至った。(Means for Solving the Problems) The present inventors have conducted intensive studies to solve the above problems, and as a result, have completed the present invention.
すなわち、本発明によれば、紫外レーザーを芳香族系
高分子成形物に照射する表面加工法において、該高分子
成形物の少なくとも照射表面部に液体を存在させること
を特徴とする芳香族系高分子成形物の表面加工方法が提
供される。That is, according to the present invention, in a surface processing method of irradiating an aromatic polymer molded article with an ultraviolet laser, a liquid having a high aromatic content is characterized in that at least the surface of the polymer molded article irradiated with a liquid is present. Provided is a surface processing method for a molecular molded article.
S.ラザレらは上記の報文において、この紫外レーザー
による高分子表面のエッチングは、その表面状態を観察
するのに迅速で簡便な方法であるとしている。しかし、
彼らは、そのエッチングについて気相雰囲気又は真空下
での検討しか行なっておらず、本発明における如き照射
面に液体を存在させる湿式照射については全く検討され
ていない。In the above-mentioned report, S. Lazare et al. State that the etching of the polymer surface by the ultraviolet laser is a quick and simple method for observing the surface condition. But,
They have only studied the etching in a gas phase atmosphere or under vacuum, and have not studied wet irradiation in which a liquid is present on the irradiation surface as in the present invention.
本発明の方法は、紫外レーザーを芳香族系高分子成形
物の表面に照射するに際し、その芳香族系高分子成形物
の少なくとも紫外レーザー照射部に、液体を存在させ
る。液体としては、照射レーザー波長での吸光係数が微
小な、かつ、高分子を溶かさないものが好ましく、例え
ば、水の他、ヘキサン、アルコール、フロン等の有機溶
媒が好適である。成形物の表面部に液体を存在させる方
法としては、成形物を液体中に浸漬する方法、成形物の
表面に液体を噴射したり、流通させる方法等がある。In the method of the present invention, when the surface of an aromatic polymer molded product is irradiated with an ultraviolet laser, a liquid is caused to exist in at least the ultraviolet laser irradiation part of the aromatic polymer molded product. The liquid is preferably one that has a small absorption coefficient at the irradiation laser wavelength and does not dissolve the polymer. For example, in addition to water, organic solvents such as hexane, alcohol, and chlorofluorocarbon are suitable. As a method of allowing the liquid to exist on the surface of the molded product, there are a method of immersing the molded product in the liquid, a method of spraying the liquid on the surface of the molded product, and a method of circulating the liquid.
本発明は、芳香族系高分子成形物の改質したい表面部
位に相当するマスク（金属板製パターンなど）を通過さ
せたレーザービームを照射することで、希望する照射部
分のみに加工を施すことができる。この場合、エキシマ
レーザーのビームは、ヘリウム−ネオンレーザー、アル
ゴン及びクリプトンイオンレーザー、Nd+:YAGレーザー
等の他のレーザーのビームと比較して、ビーム形状が大
きいために、このビームを走査させて改質すべき部位を
照射することで、大面積化にも容易に対応できる。特
に、本発明は、紫外レーザーによる非熱的な光化学分解
反応を用いる加工法であるため、照射部位以外の周辺に
は熱的損傷を何ら生じない。しかも、レーザーの照射に
より発生したレーザー照射分解物は、周囲には何ら付着
しない。また、成形物の表面に形成する模様の形状、大
きさ、及び除去されるフィルムの量（すなわち切削され
る深さ）は、照射するレーザーの波長、フルエンス、パ
ルス数により制御できる。こうして、レーザー照射部分
の成形物表面上に、物理的、化学的に安定な加工を行な
うことができる。INDUSTRIAL APPLICABILITY The present invention irradiates a laser beam that has passed through a mask (a metal plate pattern or the like) corresponding to a surface portion of an aromatic polymer molded product to be modified, thereby processing only a desired irradiation portion. You can In this case, the beam of the excimer laser has a large beam shape as compared with the beams of other lasers such as a helium-neon laser, an argon and krypton ion laser, and an Nd + : YAG laser. By irradiating the site to be modified, it is possible to easily cope with a large area. In particular, since the present invention is a processing method using a non-thermal photochemical decomposition reaction by an ultraviolet laser, no thermal damage occurs in the periphery other than the irradiation site. In addition, the laser irradiation decomposition product generated by the laser irradiation does not adhere to the surroundings. Further, the shape and size of the pattern formed on the surface of the molded product and the amount of the film to be removed (that is, the cutting depth) can be controlled by the wavelength of the laser to be irradiated, the fluence, and the number of pulses. In this way, physically and chemically stable processing can be performed on the surface of the molded product at the laser-irradiated portion.
本発明におけるレーザーとしては、波長400nm以下の
紫外レーザーが適しており、特に好適には、XeF（351n
m）、XeCl（308nm）、KrF（248nm）、ArF（193nm）ある
いはF2（157nm）エキシマレーザーである。また、Nd+:Y
AG、色素レーザー、Krイオンレーザー、Arイオンレーザ
ーあるいは銅蒸気レーザーの基本発振波長光を非線形光
学素子などにより、紫外光領域のレーザーに変換したも
のも有効である。レーザーのフルエンスとしては、素材
により異なるが、約0.1mJ/cm2/パルス以上の高輝度レー
ザーが望ましい。As the laser in the present invention, an ultraviolet laser having a wavelength of 400 nm or less is suitable, and particularly preferably, XeF (351n
m), XeCl (308 nm), KrF (248 nm), ArF (193 nm) or F 2 (157 nm) excimer laser. Also, Nd + : Y
It is also effective to convert the fundamental oscillation wavelength light of AG, a dye laser, a Kr ion laser, an Ar ion laser, or a copper vapor laser into a laser in the ultraviolet region by using a non-linear optical element or the like. The fluence of the laser depends on the material, but a high-brightness laser of about 0.1 mJ / cm 2 / pulse or more is desirable.
本発明において被加工物として用いる成形物は、各種
の形状及び構造を有することができ、少なくともその加
工表面部が芳香族系高分子から構成されたものであれば
よい。この場合、芳香族系高分子としては、各種のもの
が用いられ、結晶性、非結晶性のいずれのものでもよ
い。芳香族系高分子としては、例えば、芳香族ポリフェ
ニレンサルファイド、芳香族ポリエーテルエーテルケト
ン、芳香族ポリエーテルイミド、芳香族ポリエーテルス
ルホン、芳香族ポリイミド、芳香族ポリエステル、芳香
族エポキシ樹脂等の縮合物又は共縮重合物あるいはそれ
らの混合物を好ましいものとして挙げることができる。The molded product used as the object to be processed in the present invention may have various shapes and structures as long as at least the processed surface part thereof is composed of an aromatic polymer. In this case, various kinds of aromatic polymers are used, and they may be crystalline or amorphous. As the aromatic polymer, for example, a condensate of aromatic polyphenylene sulfide, aromatic polyether ether ketone, aromatic polyether imide, aromatic polyether sulfone, aromatic polyimide, aromatic polyester, aromatic epoxy resin, etc. Alternatively, a copolycondensation product or a mixture thereof can be mentioned as a preferable one.
本発明における芳香族系高分子成形物としては、フィ
ルム、シート、棒体、繊維の他、各種構造物が挙げられ
る。また、その成形物は、ガラス繊維や炭素繊維等の各
種繊維や、充填剤で強化された成形物であることがで
き、また、芳香族系高分子と他の素材との複合体である
ことができる。Examples of the aromatic polymer molding in the present invention include films, sheets, rods, fibers, and various structures. In addition, the molded product can be various fibers such as glass fiber and carbon fiber, or a molded product reinforced with a filler, and be a composite of an aromatic polymer and another material. You can
（発明の効果） 本発明による紫外レーザーを用いる芳香族系高分子成
形物の加工法によれば、表面部からその高分子の削除
（分解）による微細凹部を成形物表面に形成することが
できる。この加工法によれば、表面に多数の微細凹凸を
形成されることができ、このような表面は化学的に活性
な改質表面として作用する。本発明の方法では、その成
形物の照射面に液体を存在させたことから、芳香族系高
分子成形物の紫外レーザー加工に際して発生する分解物
は液体に懸濁物を生じることなく容易に捕捉され、成形
物表面や加工装置表面に分解物が付着するのが防止され
る。(Effects of the Invention) According to the processing method for an aromatic polymer molded article using an ultraviolet laser according to the present invention, fine recesses can be formed on the surface of the molded article by removing (decomposing) the polymer from the surface portion. . According to this processing method, many fine irregularities can be formed on the surface, and such a surface acts as a chemically active modified surface. In the method of the present invention, since the liquid is allowed to exist on the irradiation surface of the molded product, the decomposition product generated during the ultraviolet laser processing of the aromatic polymer molded product can be easily captured without forming a suspension in the liquid. As a result, the decomposition product is prevented from adhering to the surface of the molded product or the surface of the processing device.
（実施例） 以下、本発明を実施例により、さらに詳細に説明す
る。(Examples) Hereinafter, the present invention will be described in more detail with reference to examples.
実施例１ 純水中において、ポリエチレンナフタレートフィルム
の平滑な面に、XeClエキシマーシーザーをエネルギー密
度1J/cm2で30ショット照射させた。良好なエッチング特
性が得られ、照射部の周囲には分解物等の不純物は完全
に除去されていた。さらに、延伸フィルムを用いた場合
には、照射面に形態学的な凹凸が生成していた。Example 1 In pure water, a smooth surface of a polyethylene naphthalate film was irradiated with XeCl excimer caesar at an energy density of 1 J / cm 2 for 30 shots. Good etching characteristics were obtained, and impurities such as decomposed products were completely removed around the irradiated portion. Furthermore, when a stretched film was used, morphological unevenness was generated on the irradiated surface.
実施例２ ヘキサン中において、ポリエチレンナフタレートフィ
ルムの平滑な面に、XeClエキシマーレーザーをエネルギ
ー密度1J/cm2で30ショット照射させた。良好なエッチン
グ特性が得られ、照射部の周囲には分解物等の不純物は
完全に除去されていた。さらに、延伸フィルムを用いた
場合には、照射面に形態学的な凹凸が生成していた。Example 2 In hexane, a smooth surface of a polyethylene naphthalate film was irradiated with XeCl excimer laser for 30 shots at an energy density of 1 J / cm 2 . Good etching characteristics were obtained, and impurities such as decomposed products were completely removed around the irradiated portion. Furthermore, when a stretched film was used, morphological unevenness was generated on the irradiated surface.
実施例３ 純水中において、芳香族ポリエーテルスルホンフィル
ムの平滑な面に、XeClエキシマーレーザーをエネルギー
密度1J/cm2で30ショット照射させた。良好なエッチング
特性が得られ、照射部の周囲には分解物等の不純物は完
全に除去された。また、照射面に形態学的な凹凸が生成
していた。Example 3 In pure water, a smooth surface of an aromatic polyether sulfone film was irradiated with XeCl excimer laser for 30 shots at an energy density of 1 J / cm 2 . Good etching characteristics were obtained, and impurities such as decomposed products were completely removed around the irradiated portion. In addition, morphological unevenness was generated on the irradiated surface.
実施例４ ヘキサン中において、芳香族ポリエーテルスルホンフ
ィルムの平滑な面に、XeClエキシマーレーザーをエネル
ギー密度1J/cm2で30ショット照射させた。良好なエッチ
ング特性が得られ、照射部の周囲には分解物等の不純物
は完全に除去された。また、照射面に形態学的な凹凸が
生成していた。Example 4 In hexane, a smooth surface of an aromatic polyether sulfone film was irradiated with XeCl excimer laser for 30 shots at an energy density of 1 J / cm 2 . Good etching characteristics were obtained, and impurities such as decomposed products were completely removed around the irradiated portion. In addition, morphological unevenness was generated on the irradiated surface.
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭60−46893（ＪＰ，Ａ) 特開 昭62−164737（ＪＰ，Ａ) 特開 昭61−269994（ＪＰ，Ａ) 特開 昭61−273287（ＪＰ，Ａ) ─────────────────────────────────────────────────── ─── Continuation of front page (56) Reference JP-A-60-46893 (JP, A) JP-A-62-164737 (JP, A) JP-A-61-269994 (JP, A) JP-A-61- 273287 (JP, A)
Claims (2)
射する表面加工法において、該芳香族系高分子成形物の
少なくとも照射表面部に液体を存在させることを特徴と
する芳香族系高分子成形物の表面加工方法。1. A surface processing method of irradiating an aromatic polymer molded article with an ultraviolet laser, wherein a liquid is present at least on the irradiated surface of the aromatic polymer molded article. Surface processing method for molecular molded products.
し、これに紫外レーザーを照射する請求項１の方法。2. The method according to claim 1, wherein the aromatic polymer molding is dipped in a liquid and irradiated with an ultraviolet laser.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1199642A JPH0811772B2 (en) | 1989-08-01 | 1989-08-01 | Surface processing method of polymer moldings using laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1199642A JPH0811772B2 (en) | 1989-08-01 | 1989-08-01 | Surface processing method of polymer moldings using laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0362831A JPH0362831A (en) | 1991-03-18 |
| JPH0811772B2 true JPH0811772B2 (en) | 1996-02-07 |
Family
ID=16411246
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1199642A Expired - Lifetime JPH0811772B2 (en) | 1989-08-01 | 1989-08-01 | Surface processing method of polymer moldings using laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0811772B2 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06228343A (en) * | 1993-02-08 | 1994-08-16 | Hamamatsu Photonics Kk | Process and apparatus for surface modification of fluororesin |
| EP0644227B1 (en) * | 1993-03-23 | 2003-07-23 | Tokai University | Solid surface modifying method and apparatus |
| MY113227A (en) * | 1995-01-18 | 2001-12-31 | Kurashiki Boseki Kk | Tube-shaped film having its inner peripheral surface treated, method for treating inner peripheral surface of tube-shaped film and apparatus therefor |
| TWI265550B (en) | 2002-05-14 | 2006-11-01 | Toshiba Corp | Fabrication method, manufacturing method for semiconductor device, and fabrication device |
| JP2003332215A (en) * | 2002-05-14 | 2003-11-21 | Toshiba Corp | Processing method, method of manufacturing semiconductor device, and processing device |
| US8017795B2 (en) | 2005-04-21 | 2011-09-13 | Ndsu Research Foundation | Radiation curable polymer films having improved laser ablation properties and radiation curable sensitizers therefor |
| DE102018214834B4 (en) * | 2018-08-31 | 2024-02-22 | Airbus Defence and Space GmbH | Method for nanostructuring carbon fiber surfaces in fiber composite plastics based on sulfur and aromatic hydrocarbons as well as a fiber composite plastic produced according to the method and a method for repairing at least one fiber in a fiber composite plastic |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6046893A (en) * | 1983-08-25 | 1985-03-13 | Seiko Epson Corp | Laser working device |
-
1989
- 1989-08-01 JP JP1199642A patent/JPH0811772B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0362831A (en) | 1991-03-18 |
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