KR102129435B1 - Electrostatic chuk system, apparatus for forming film, adsorption method, method for forming film, and manufacturing method of electronic device - Google Patents

Abstract

The electrostatic chuck system of the present invention is an electrostatic chuck system for adsorbing a second adsorbent with a first adsorbent and the first adsorbent interposed therebetween, and includes an electrostatic chuck having a plurality of adsorption sections and a voltage on the plurality of adsorption sections. It includes a voltage applying unit for applying, and a voltage control unit for controlling the application of the voltage by the voltage applying unit, the voltage control unit, the adsorption voltage for adsorbing the second adsorbent adsorbs a plurality of the electrostatic chuck It characterized in that to control the voltage applying unit to be sequentially applied in at least one direction from the first adsorption unit of the unit.

Description

Electrostatic chuck system, film forming apparatus, adsorption method, film forming method, and manufacturing method of electronic devices

The present invention relates to an electrostatic chuck system, a film forming apparatus, an adsorption method, a film forming method, and a method for manufacturing an electronic device.

In the manufacture of an organic EL display device (organic EL display), when forming an organic light emitting element (organic EL element; OLED) constituting the organic EL display device, a pixel pattern is formed of vaporized materials evaporated from a deposition source of a film forming apparatus. By depositing it on the substrate through the formed mask, an organic material layer or a metal layer is formed.

In the deposition apparatus of the up-deposition method (depo-up), the deposition source is installed under the vacuum container of the deposition apparatus, the substrate is disposed on the top of the vacuum container, and deposition is performed on the lower surface of the substrate. In the vacuum container of the film deposition apparatus of the upward deposition method, the substrate is held and supported by the substrate holder only at the periphery of the lower surface, so that the substrate sags by its own weight, which is one factor that degrades the deposition accuracy. Is becoming. Even in a film forming apparatus other than the upward vapor deposition method, there is a possibility that sagging due to the self-weight of the substrate occurs.

As a method for reducing sagging due to the self-weight of the substrate, a technique using an electrostatic chuck has been studied. That is, the sag of the substrate can be reduced by adsorbing the upper surface of the substrate with an electrostatic chuck over the entire surface.

Patent Document 1 (Patent Publication No. 2007-0010723) proposes a technique for adsorbing a substrate and a mask with an electrostatic chuck.

Patent Publication No. 2007-0010723

However, in the prior art, when adsorbing the mask over the substrate with an electrostatic chuck, there was a problem that wrinkles remain in the mask after adsorption.

An object of the present invention is to adsorb both the first adsorbent and the second adsorbent to the electrostatic chuck satisfactorily.

An electrostatic chuck system according to a first aspect of the present invention is an electrostatic chuck system for adsorbing a second adsorbent with a first adsorbent and the first adsorbent interposed therebetween, and the electrostatic chuck having a plurality of adsorbents and the plurality of It includes a voltage applying unit for applying a voltage to the adsorption unit, and a voltage control unit for controlling the application of the voltage by the voltage application unit, the voltage control unit, the adsorption voltage for adsorbing the second adsorbent is the It characterized in that the voltage applying unit is controlled to be sequentially applied in at least one direction from the first adsorption unit among the plurality of adsorption units of the electrostatic chuck.

A film forming apparatus according to a second aspect of the present invention is a film forming apparatus for forming a film through a mask on a substrate, comprising a first substrate to be adsorbed and an electrostatic chuck system for adsorbing a mask as a second object to be adsorbed over the substrate. Included, the electrostatic chuck system is characterized in that the electrostatic chuck system according to the first aspect of the present invention.

The adsorption method according to the third aspect of the present invention is a method for adsorbing a first adsorbent and a second adsorbent to an electrostatic chuck including a plurality of adsorbents, and applying a first adsorption voltage to the plurality of adsorbents A first adsorption step of adsorbing the first adsorbent to the electrostatic chuck, and applying a second adsorption voltage to the plurality of adsorption parts to sandwich the first adsorbent between the second adsorbent to the electrostatic chuck. And a second adsorption step of adsorbing, wherein the second adsorption step sequentially applies the second adsorption voltage in at least one direction from the first adsorption section of the plurality of adsorption sections.

The film forming method according to the fourth aspect of the present invention is a film forming method of depositing a deposition material through a mask on a substrate, the step of bringing a mask into a vacuum container, the step of bringing a substrate into the vacuum container, and a plurality of electrostatic chucks. A first adsorption step of applying a first adsorption voltage to the adsorption part of the electrostatic chuck to adsorb the substrate, and applying a second adsorption voltage to a plurality of adsorption parts of the electrostatic chuck to cover the mask with the substrate therebetween. And a second adsorption step of adsorbing the electrostatic chuck, and depositing a deposition material on the substrate through the mask by evaporating the deposition material while the substrate and the mask are adsorbed on the electrostatic chuck. In the second adsorption step, the second adsorption voltage is sequentially applied in at least one direction from the first adsorption part among the plurality of adsorption parts.

A method of manufacturing an electronic device according to a fifth aspect of the present invention is characterized in that the electronic device is manufactured using the film forming method according to the fourth aspect of the present invention.

According to the present invention, both the first to-be-adsorbed body and the second to-be-adsorbed body can be favorably adsorbed by the electrostatic chuck.

1 is a schematic view of a part of an apparatus for manufacturing an electronic device.
2 is a schematic view of a film forming apparatus according to an embodiment of the present invention.
3A to 3C are conceptual and schematic views of an electrostatic chuck system according to an embodiment of the present invention.
4A to 4C are schematic cross-sectional views showing a method of adsorbing a substrate and a mask to an electrostatic chuck.
5A to 5E are schematic plan views showing various embodiments of the adsorption method according to the present invention.
6 is a schematic diagram showing an electronic device.

Hereinafter, preferred embodiments and examples of the present invention will be described with reference to the drawings. However, the following embodiments and examples are merely illustrative of preferred structures of the present invention, and the scope of the present invention is not limited to these structures. In addition, in the following description, the hardware configuration and software configuration of the apparatus, processing flow, manufacturing conditions, sizes, materials, shapes, and the like are intended to limit the scope of the present invention to this, unless otherwise specified. no.

The present invention can be applied to an apparatus for depositing various materials on the surface of a substrate to form a film, and is preferably applicable to an apparatus for forming a thin film (material layer) of a desired pattern by vacuum deposition. As the material of the substrate, any material such as glass, a polymer material film, or metal can be selected. For example, the substrate may be a substrate on which a film such as polyimide is laminated on a glass substrate. Moreover, arbitrary materials, such as an organic material and a metallic material (metal, metal oxide, etc.) can also be selected as a vapor deposition material. In addition to the vacuum deposition apparatus described in the following description, the present invention can be applied to a film forming apparatus including a sputtering apparatus or a chemical vapor deposition (CVD) apparatus. The technique of this invention is specifically applicable to manufacturing apparatuses, such as an organic electronic device (for example, an organic light emitting element, a thin film solar cell), and an optical member. Among them, an apparatus for manufacturing an organic light-emitting device that forms an organic light-emitting device by evaporating a deposition material and depositing it on a substrate through a mask is one of the preferred applications of the present invention.

<Electronic device manufacturing apparatus>

1 is a plan view schematically showing a configuration of a part of an apparatus for manufacturing an electronic device.

The manufacturing apparatus in FIG. 1 is used for, for example, manufacturing a display panel of an organic EL display device for a smartphone. In the case of a display panel for a smartphone, for example, a 4.5 generation substrate (about 700 mm × about 900 mm) or a 6 generation full size (about 1500 mm × about 1850 mm) or half cut size (about 1500 mm × After forming a film for forming an organic EL element on a substrate of about 925 mm), the substrate is cut out to produce a plurality of small-sized panels.

The electronic device manufacturing apparatus generally includes a plurality of cluster apparatuses 1 and a relay apparatus that connects between the cluster apparatuses 1.

The cluster apparatus 1 includes a plurality of film forming apparatuses 11 for processing (e.g., film forming) the substrate S, and a plurality of mask stock devices 12 for storing masks M before and after use. It is equipped with the conveyance chamber 13 arrange|positioned at the center. As shown in Fig. 1, the transfer chamber 13 is connected to each of the plurality of film forming apparatuses 11 and the mask stock apparatus 12.

In the transfer chamber 13, a transfer robot 14 for transporting a substrate and a mask is disposed. The transfer robot 14 conveys the substrate S from the pass chamber 15 of the relay device disposed on the upstream side to the film forming apparatus 11. Further, the transport robot 14 transports the mask M between the film forming apparatus 11 and the mask stock apparatus 12. The transfer robot 14 may be, for example, a robot having a structure in which a robot hand for holding a substrate S or a mask M is mounted on a multi-joint arm.

In the film forming apparatus 11 (also called a deposition apparatus), the deposition material stored in the evaporation source is heated by a heater to evaporate, and is deposited on a substrate through a mask. Transferring and receiving of the substrate S with the transfer robot 14, adjustment (alignment) of the relative positions of the substrate S and the mask M, alignment of the substrate S onto the mask M, deposition (deposition) ), a series of film-forming processes are performed by the film-forming apparatus 11.

In the mask stock device 12, a new mask to be used in the film forming process in the film forming apparatus 11 and a used mask are divided and stored in two cassettes. The conveying robot 14 conveys the used mask from the film forming apparatus 11 to the cassette of the mask stock apparatus 12, and the new mask stored in another cassette of the mask stock apparatus 12 is formed into the film forming apparatus 11 To be returned.

In the cluster device 1, the pass chamber 15 for transferring the substrate S from the upstream side to the cluster device 1 in the flow direction of the substrate S, and the film-forming process is completed in the cluster device 1 The buffer chamber 16 for transferring the substrate S to another downstream cluster device is connected. The transfer robot 14 of the transfer chamber 13 receives the substrate S from the upstream side pass chamber 15, and one of the film forming apparatuses 11 in the cluster apparatus 1 (for example, the film forming apparatus 11a) ). Further, the transfer robot 14 receives the substrate S on which the film forming process in the cluster device 1 is completed from one of the plurality of film forming apparatuses 11 (for example, the film forming apparatus 11b), and is connected to the downstream side. It is conveyed to the buffer chamber 16.

Between the buffer chamber 16 and the pass chamber 15, a turning chamber 17 for changing the direction of the substrate is provided. A transfer robot 18 is installed in the turning chamber 17 to receive the substrate S from the buffer chamber 16 and rotate the substrate S 180 degrees to transport it to the pass chamber 15. Through this, the direction of the substrate S is the same in the upstream cluster apparatus and the downstream cluster apparatus, and the substrate processing is facilitated.

The pass chamber 15, the buffer chamber 16, and the turning chamber 17 are so-called relay devices that connect between the cluster devices, and the relay devices installed on the upstream side and/or the downstream side of the cluster device include a pass room and a buffer room. , It includes at least one of the turning room.

The film forming apparatus 11, the mask stock apparatus 12, the transfer chamber 13, the buffer chamber 16, the turning chamber 17, etc. are maintained in a high vacuum state in the manufacturing process of the organic light emitting element. The pass chamber 15 is usually maintained in a low vacuum state, but may be maintained in a high vacuum state as necessary.

In this embodiment, the configuration of the electronic device manufacturing apparatus has been described with reference to FIG. 1, but the present invention is not limited thereto, and may have other types of devices or chambers, and arrangements between these devices or chambers may be different. have.

Hereinafter, a specific configuration of the film forming apparatus 11 will be described.

<film forming device>

2 is a schematic view showing the configuration of the film forming apparatus 11. In the following description, the XYZ Cartesian coordinate system with the vertical direction as the Z direction is used. When the substrate S is fixed parallel to the horizontal plane (XY plane) at the time of film formation, the short side direction (direction parallel to the short side) of the substrate S is X direction, and the long side direction (direction parallel to the long side) is Y direction. Should be Also, the rotation angle around the Z axis is represented by θ.

The film forming apparatus 11 includes a vacuum container 21 maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen gas, a substrate support unit 22 provided in the vacuum container 21, and a mask support unit 23. , An electrostatic chuck 24 and a deposition source 25.

The substrate support unit 22 is a means for receiving and holding the substrate S that has been transported by the transport robot 14 provided in the transport chamber 13 and is also called a substrate holder.

The mask support unit 23 is provided under the substrate support unit 22. The mask support unit 23 is a means for receiving and holding the mask M conveyed by the transport robot 14 provided in the transport chamber 13 and is also called a mask holder.

The mask M has an opening pattern corresponding to a thin film pattern to be formed on the substrate S, and is placed on the mask support unit 23. In particular, a mask used to manufacture an organic EL device for a smartphone is a metal mask formed with a fine opening pattern and is also called a FMM (Fine Metal Mask).

Above the substrate support unit 22, an electrostatic chuck 24 for adsorbing and fixing the substrate by electrostatic attraction is provided. The electrostatic chuck 24 has a structure in which an electric circuit such as a metal electrode is embedded in a dielectric (eg, ceramic material) matrix. The electrostatic chuck 24 may be a Coulomb force type electrostatic chuck, a Johnson-Rabeck force type electrostatic chuck, or a gradient force type electrostatic chuck. The electrostatic chuck 24 is preferably a gradient force type electrostatic chuck. By making the electrostatic chuck 24 an electrostatic chuck of a gradient force type, even when the substrate S is an insulating substrate, it can be favorably adsorbed by the electrostatic chuck 24. When the electrostatic chuck 24 is a Coulomb force type electrostatic chuck, when positive (+) and negative (-) potentials are applied to the metal electrode, the metal electrode and the electrode to be adsorbed, such as the substrate S, are applied through the dielectric matrix. The polarization charge of the opposite polarity is induced, and the substrate S is adsorbed and fixed to the electrostatic chuck 24 by electrostatic attraction between them.

The electrostatic chuck 24 may be formed of a single plate or may have a plurality of subplates. In addition, even when it is formed of a single plate, a plurality of electric circuits may be included therein, so that the electrostatic force is different depending on the position in one plate.

In the present embodiment, as described later, the film (M, the second adsorbed body) is adsorbed and held by the electrostatic chuck 24 as well as the substrate (S, the first adsorbed body) before deposition.

That is, in the present embodiment, the substrate S (first adsorbed body) placed under the vertical direction of the electrostatic chuck 24 is adsorbed and held by the electrostatic chuck 24, and thereafter, the substrate S, the first The mask (M, second adsorbed body) placed on the opposite side of the electrostatic chuck 24 with the adsorbed body interposed therebetween is adsorbed and held by the electrostatic chuck 24 over the substrate S (first absorbed body). Particularly, when the mask M is adsorbed over the substrate S by the electrostatic chuck 24, a part of the mask M becomes the origin of adsorption of the mask M by the electrostatic chuck, and at least from the origin of this adsorption The other parts of the mask M are sequentially adsorbed in one direction. This will be described later with reference to FIGS. 3 to 5.

Although not shown in FIG. 2, organic matter deposited on the substrate S is provided by installing a cooling mechanism (eg, a cooling plate) that suppresses the temperature rise of the substrate S on the opposite side to the adsorption surface of the electrostatic chuck 24. You may make it the structure which suppresses deterioration and deterioration of a material.

The deposition source 25 is a crucible (not shown) in which the deposition material to be deposited on the substrate is stored, a heater (not shown) for heating the crucible, and the deposition material scattering to the substrate until the evaporation rate from the deposition source is constant. And a shutter (not shown) that prevents them. The evaporation source 25 may have various configurations according to applications, such as a point evaporation source or a linear evaporation source.

Although not shown in FIG. 2, the film forming apparatus 11 includes a film thickness monitor (not shown) and a film thickness calculation unit (not shown) for measuring the film thickness deposited on the substrate.

A substrate Z actuator 26, a mask Z actuator 27, an electrostatic chuck Z actuator 28, a positioning mechanism 29, and the like are installed on the upper outer side (standby side) of the vacuum container 21. These actuators and the position adjusting mechanism are composed of, for example, a motor and a ball screw, or a motor and a linear guide. The substrate Z actuator 26 is a driving means for moving the substrate support unit 22 up and down (moving in the Z direction). The mask Z actuator 27 is a driving means for elevating (moving in the Z direction) the mask support unit 23. The electrostatic chuck Z actuator 28 is a driving means for elevating (moving in the Z direction) the electrostatic chuck 24.

The position adjustment mechanism 29 is a drive means for the alignment of the electrostatic chuck 24. The positioning mechanism 29 rotates the entire electrostatic chuck 24 relative to the substrate support unit 22 and the mask support unit 23 in the X-direction, Y-direction, and θ rotations. In the present embodiment, alignment of the relative positions of the substrate S and the mask M is performed by positioning the electrostatic chuck 24 in the XYθ direction while the substrate S is adsorbed.

On the outer upper surface of the vacuum container 21, in addition to the above-described driving mechanism, an alignment camera for photographing alignment marks formed on the substrate S and the mask M through a transparent window provided on the upper surface of the vacuum container 21 ( 20) may be provided. In this embodiment, the alignment camera 20 is installed at a position corresponding to the diagonal of the rectangular substrate S, the mask M and the electrostatic chuck 24, or at a position corresponding to the four corners of the rectangle. You may do it.

The alignment camera 20 provided in the film forming apparatus 11 of the present embodiment is a fine alignment camera used to precisely adjust the relative positions of the substrate S and the mask M, and the viewing angle is narrow. It is a camera with high resolution. The film forming apparatus 11 may include a camera for a rough alignment having a relatively wide viewing angle and a low resolution in addition to the camera 20 for a fine alignment.

The positioning mechanism 29 is based on the positional information of the substrate (S, first adsorbed body) and the mask (M, second adsorbed body) obtained by the alignment camera 20, and the substrate (S, the first adsorbed body) ) And the mask (M, second adsorbed body) are relatively moved to align the position.

The film forming apparatus 11 includes a control unit (not shown). The control unit has functions such as transport and alignment of the substrate S, control of the evaporation source 25, and control of film formation. The control unit can be configured by, for example, a computer having a processor, memory, storage, I/O, or the like. In this case, the function of the control unit is realized by the processor executing a program stored in the memory or storage. As a computer, a general-purpose personal computer may be used, or an embedded computer or a programmable logic controller (PLC) may be used. Alternatively, some or all of the functions of the control unit may be configured with a circuit such as an ASIC or an FPGA. In addition, a control unit may be provided for each film forming apparatus, or one control unit may be configured to control a plurality of film forming apparatuses.

<Electrostatic Chuck System>

The electrostatic chuck system 30 according to this embodiment will be described with reference to FIGS. 3A to 3C. 3A is a conceptual block diagram of the electrostatic chuck system 30 of this embodiment, FIG. 3B is a schematic cross-sectional view of the electrostatic chuck 24, and FIG. 3C is a schematic plan view of the electrostatic chuck 24.

The electrostatic chuck system 30 of this embodiment includes an electrostatic chuck 24, a voltage application unit 31, and a voltage control unit 32, as shown in FIG. 3A.

The voltage applying unit 31 applies a voltage for generating an electrostatic force to the electrode portion of the electrostatic chuck 24.

The voltage control unit 32 starts the application of the voltage and voltage applied from the voltage application unit 31 to the electrode unit according to the adsorption process of the electrostatic chuck system 30 or the deposition process of the film deposition apparatus 11. Control the starting point, the voltage holding time, and the voltage application sequence. The voltage control unit 32 may independently control, for example, voltage application to the plurality of sub-electrode units 241 to 249 included in the electrode unit of the electrostatic chuck 24 for each sub-electrode unit. In the present embodiment, the voltage control unit 32 is implemented separately from the control unit of the film forming apparatus 11, but the present invention is not limited to this, and may be integrated into the control unit of the film forming apparatus 11.

The electrostatic chuck 24 includes an electrode portion that generates an electrostatic adsorption force for adsorbing an object to be adsorbed (eg, substrate S, mask M) on the adsorption surface, and the electrode portion includes a plurality of sub-electrode portions 241 to 249. ). For example, the electrostatic chuck 24 of this embodiment, as shown in Fig. 3C, is a direction parallel to the long side of the electrostatic chuck 24 (Y direction) and/or a direction parallel to the short side of the electrostatic chuck 24. And a plurality of sub-electrode portions 241 to 249 divided along the (X direction). For example, the electrostatic chuck 24 of this embodiment may have nine sub-electrode portions 241 to 249, as shown in FIG. 3C, but is not limited thereto, and the substrate S and the mask M are not limited thereto. In order to more precisely control the adsorption of, it may include a different number of sub-electrode parts.

In addition, the plurality of sub-electrode parts may be implemented by having a single physical plate having a plurality of sub-electrode parts, or each of the plurality of physically divided plates having one or more sub-electrode parts. As such, as long as voltage application to each of the plurality of sub-electrode portions can be controlled independently, the specific physical structure and electrical circuit structure can be implemented in various ways.

Each sub-electrode portion includes an electrode pair 33 to which potentials of positive (first polarity) and negative (second polarity) are applied to generate electrostatic adsorption force. For example, each electrode pair 33 includes a first electrode 331 to which a positive potential is applied and a second electrode 332 to which a negative potential is applied.

The first electrode 331 and the second electrode 332 each have a comb shape, as shown in FIG. 3C. For example, the first electrode 331 and the second electrode 332 each have a plurality of comb parts and a base part to which a plurality of comb parts are connected. The base of each electrode 331 and 332 supplies a potential to a plurality of comb parts, and the plurality of comb parts generate electrostatic adsorption force between the substrates S. Each comb portion of the first electrode 331 is alternately arranged to face each comb portion of the second electrode 332 in one sub-electrode portion. In this way, by setting each comb portion of each electrode 331 and 332 to face each other and to be entangled with each other, it is possible to narrow the gap between electrodes to which different potentials are applied, to form a large inequality electric field, and to adsorb the adsorbent by a gradient force. can do.

In the present embodiment, the electrodes 331 and 332 of the sub-electrode portions 241 to 249 of the electrostatic chuck 24 have been described as having a comb shape, but the present invention is not limited to this, and between the adsorbed body As long as it can generate an electrostatic manpower, it can have various shapes.

The electrostatic chuck 24 of this embodiment has a plurality of adsorption portions corresponding to a plurality of sub-electrode portions.

Here, the'adsorption part' refers to the region of the electrostatic chuck 24 that simultaneously induces electrostatic attraction in a predetermined region of the object to be adsorbed. For example, the'adsorption unit' may be an area of the electrostatic chuck 24 that is configured as a part of the sub-electrode units 241 to 249 which are controlled to simultaneously apply voltage by the voltage control unit 32. Hereinafter, in this specification, the description of "applying a voltage to an adsorption part" refers to applying a voltage to one or more sub-electrode parts constituting the adsorption part.

The sub-electrode portions 241 to 249 constituting one'adsorption portion' need not necessarily be composed of two or more sub-electrode portions, and may be composed of one sub-electrode portion. For example, in the embodiment illustrated in FIG. 3C, each of the plurality of adsorption parts may be implemented to correspond to each of the plurality of sub-electrode parts.

Alternatively, one adsorption unit may be implemented to include a plurality of sub-electrode units. For example, by controlling the application of the voltage to the sub-electrode portions 241 to 249 by the voltage control unit 32, as described later, the adsorption progression direction (X direction) of the substrate S and/or the mask M ) And three sub-electrode parts 241, 244, and 247 arranged in a direction intersecting (Y direction) may form one adsorption part. That is, each of the three sub-electrode portions 241, 244, and 247 can independently control voltage, but by controlling such three sub-electrode portions 241, 244, and 247 to be simultaneously applied with voltage, these three sub It is possible to make the electrode portions 241, 244, and 247 function as one adsorption portion.

In addition, each of the plurality of adsorption parts included in the electrostatic chuck 24 is not necessarily limited to a configuration having the same number of sub-electrode parts, and may have a different number of sub-electrode parts depending on the adsorption part. For example, by controlling the application of the voltage to the sub-electrode portions 241 to 249 by the voltage control unit 32, as described later with reference to FIGS. 5A to 5E, each of the plurality of adsorption portions has one sub-electrode. Negative (e.g., 247 or 243 in FIG. 5C, 244 in FIG. 5D, 245 in FIG. 5E), two sub-electrode portions (e.g., 244 and 248 in FIG. 5C), three sub-electrode portions (e.g., 241 in FIG. 5D) , 245 and 247) or four sub-electrode parts (eg, 242, 244, 246 and 248 in FIG. 5E).

<Adsorption method and voltage control by electrostatic chuck system>

4A to 4C are schematic cross-sectional views showing an adsorption method according to the present invention, and FIGS. 5A to 5E are plan schematic views showing various embodiments of an adsorption method according to the present invention. Hereinafter, a process for adsorbing the substrate S and the mask M to the electrostatic chuck 24 and the voltage control thereof will be described with reference to FIGS. 4A to 4C and FIGS. 5A to 5E.

4A shows a process for adsorbing the substrate S to the electrostatic chuck 24.

In this embodiment, as shown in Fig. 4A, the front surface of the substrate S is not simultaneously adsorbed to the lower surface of the electrostatic chuck 24, but the other end from one end along the first side (short side) of the electrostatic chuck 24. Adsorption proceeds sequentially toward. However, the present invention is not limited to this, for example, the adsorption may proceed sequentially from one end to the other end along the second side (long side) of the electrostatic chuck 24, and the first side from the central portion of the electrostatic chuck 24. Alternatively, the substrate S may be sequentially adsorbed toward the periphery along the second side, and the substrate S may be adsorbed from one edge on the diagonal of the electrostatic chuck 24 toward the other edge facing it. May be

In order to sequentially adsorb the substrate S along the first side of the electrostatic chuck 24, a first voltage (ΔV1, first adsorption voltage) for adsorbing the substrate is applied to the plurality of sub-electrode parts 241 to 249. The order of application may be controlled, or the first voltage ΔV1 may be simultaneously applied to the plurality of sub-electrodes, but the structure or support of the support portion of the substrate support unit 22 supporting the substrate S may be different. .

4A shows an embodiment of sequentially adsorbing the substrate S to the electrostatic chuck 24 through control of voltages applied to the plurality of sub-electrode portions 241 to 249 of the electrostatic chuck 24. In the description with reference to FIGS. 4A to 4C, three sub-electrode parts 241, 244, and 247 arranged along the long side direction (Y direction) of the electrostatic chuck 24 form a first adsorption part ①. The three sub-electrode portions 242, 245, and 248 of the central portion of the chuck 24 form the second adsorption portion ②, and the remaining three sub-electrode portions 243, 246, and 249 are the third adsorption portion (③). ).

First, as shown in FIG. 4A, the substrate S is carried into the vacuum container 21 of the film forming apparatus 11 and is supported by the support portion of the substrate support unit 22.

Subsequently, the electrostatic chuck 24 descends and moves toward the substrate S supported by the support portion of the substrate support unit 22.

When the electrostatic chuck 24 is sufficiently close to or in contact with the substrate S, the voltage control unit 32 adsorbs the third from the first adsorption unit (①) along the first side (short side) of the electrostatic chuck 24. The first voltage (ΔV1) is sequentially controlled toward the negative (③).

That is, as shown in Figure 4a, the first voltage is first applied to the first adsorption unit (①), and then, the first voltage is applied to the second adsorption unit (②), and finally the third adsorption unit ( ③) is controlled so that the first voltage is applied.

The first voltage ΔV1 is set to a voltage large enough to reliably adsorb the substrate S to the electrostatic chuck 24.

Thereby, the adsorption of the substrate S to the electrostatic chuck 24 passes from the side corresponding to the first adsorption portion 1 of the substrate S to the third adsorption portion ③ through the central portion of the substrate S. Proceed toward (ie, adsorption of the substrate S proceeds in the X direction), and the substrate S can be adsorbed to the electrostatic chuck 24 smoothly without leaving wrinkles in the center of the substrate.

In the present embodiment, the electrostatic chuck 24 has been described as applying the first voltage ΔV1 in a state of being sufficiently close to or in contact with the substrate S, but the electrostatic chuck 24 starts to descend toward the substrate S The first voltage ΔV1 may be applied before or during the falling.

At a predetermined point in time after the adsorption process of the substrate S onto the electrostatic chuck 24 is completed, the voltage control unit 32 removes the voltage applied to the electrode portion of the electrostatic chuck 24, as shown in FIG. 4B. It is lowered from one voltage (ΔV1) to a second voltage (ΔV2) that is smaller than the first voltage (ΔV1).

The second voltage ΔV2 is an adsorption holding voltage for holding the substrate S in an adsorbed state to the electrostatic chuck 24, and the first voltage applied when adsorbing the substrate S to the electrostatic chuck 24 ( It is a voltage smaller than ΔV1). When the voltage applied to the electrostatic chuck 24 is lowered to the second voltage ΔV2, the amount of polarization charge induced to the substrate S correspondingly is also applied to the first voltage ΔV1 as shown in FIG. 4B. Although reduced compared to the case, after the substrate S is adsorbed to the electrostatic chuck 24 by the first voltage ΔV1, the substrate is adsorbed even if a second voltage ΔV2 lower than the first voltage ΔV1 is applied. You can keep it.

As described above, by lowering the voltage applied to the electrode portion of the electrostatic chuck 24 to the second voltage ΔV2, it is possible to shorten the time taken to separate the substrate from the electrostatic chuck 24.

That is, when the substrate S is to be separated from the electrostatic chuck 24, even if the voltage applied to the electrode portion of the electrostatic chuck 24 is zero (0), the electrostatic chuck 24 and the substrate S immediately It is not that the electrostatic force between is lost, but that the electric charge induced at the interface between the electrostatic chuck 24 and the substrate S disappears, which takes a considerable amount of time (sometimes several minutes). In particular, when the substrate S is adsorbed to the electrostatic chuck 24, the first electrostatic traction force sufficiently larger than the minimum electrostatic traction force Fth required to adsorb the substrate to the electrostatic chuck 24 is usually applied to ensure the adsorption. In setting the voltage, it takes a considerable amount of time for the substrate to be separated from the first voltage.

In this embodiment, after the substrate S is adsorbed to the electrostatic chuck 24, in order to prevent an increase in the overall process time Tact due to the time taken to separate the substrate S from the electrostatic chuck 24, E, the voltage applied to the electrode portion of the electrostatic chuck 24 at a predetermined time is lowered to the second voltage.

In the embodiment shown in FIG. 4B, the voltage applied to the first adsorption part (①) to the third adsorption part (③) of the electrostatic chuck 24 is shown to be simultaneously reduced to the second voltage, but the present invention is limited thereto. It is not possible to vary the time of lowering to the second voltage for each adsorption unit or the magnitude of the applied second voltage. For example, the second voltage may be sequentially lowered from the first adsorption unit (①) toward the third adsorption unit (③).

Thus, after the voltage applied to the electrode portion of the electrostatic chuck 24 is lowered to the second voltage, the substrate S adsorbed on the electrostatic chuck 24 and the mask M supported by the mask support unit 23 Adjust relative position (alignment). In the present embodiment, it has been described that the relative position adjustment (alignment) between the substrate S and the mask M is performed after the voltage applied to the electrode portion of the electrostatic chuck 24 is lowered to the second voltage. It is not limited, and the alignment process may be performed while the first voltage is applied to the electrode portion of the electrostatic chuck 24.

Next, as shown in FIG. 4C, the mask M is adsorbed with the substrate S interposed therebetween by applying a third voltage (ΔV3, second adsorption voltage) to the electrode portion of the electrostatic chuck 24. That is, the mask M is adsorbed on the lower surface of the substrate S adsorbed by the electrostatic chuck 24. Hereinafter, even if it is simply described that the mask M is adsorbed on the electrostatic chuck 24, this means that the mask M is adsorbed with the substrate S adsorbed on the electrostatic chuck 24 interposed therebetween.

To this end, first, the electrostatic chuck 24 with the substrate S adsorbed is lowered toward the mask M by the electrostatic chuck Z actuator 28.

When the lower surface of the substrate S adsorbed on the electrostatic chuck 24 comes into close contact with or close to the mask M, the voltage control unit 32 provides a voltage application unit 31 to the electrode unit of the electrostatic chuck 24. 3 Control to apply voltage (ΔV3).

The third voltage (ΔV3) is larger than the second voltage (ΔV2), and is preferably of a size such that the mask (M) can be charged by electrostatic induction over the substrate (S). Thereby, the mask M can be adsorbed to the electrostatic chuck 24 over the substrate S. However, the present invention is not limited to this, and the third voltage ΔV3 may have the same size as the second voltage ΔV2. Although the third voltage ΔV3 has the same magnitude as the second voltage ΔV2, as described above, the electrostatic chuck 24 or the substrate S between the mask S and the mask M is caused by the falling of the electrostatic chuck 24. Since the relative distance is narrowed, even if the magnitude of the voltage applied to the electrode portion of the electrostatic chuck 24 is not increased, electrostatic induction may also occur in the mask M by the polarization charge induced in the substrate, and the mask M ) Can be obtained to the extent that it can adsorb the electrostatic chuck 24 over the substrate.

The third voltage (ΔV3) may be smaller than the first voltage (ΔV1), or may be set to have a magnitude equal to that of the first voltage (ΔV1) in consideration of shortening of the process time (Tact).

In this mask adsorption process, the voltage control unit 32 is adsorbed on the lower surface of the substrate S without leaving wrinkles when the mask M is adsorbed over the substrate S with the electrostatic chuck 24 or Alternatively, the application of the third voltage (ΔV3) is controlled so that the wrinkles remain in the periphery or corner that does not correspond to the device formation region of the substrate S even if the wrinkles remain. More specifically, the voltage control unit 32 does not simultaneously apply the third voltage ΔV3 to the entire electrostatic chuck 24, but first applies the third voltage ΔV3 to one adsorption portion of the electrostatic chuck 24. In addition, the third voltage (ΔV3) is controlled to be sequentially applied to the remaining adsorption portions in at least one direction from the one adsorption portion.

For example, in the mask adsorption process illustrated in FIG. 4C, the voltage control unit 32 does not apply the third voltage ΔV3 to the entire electrostatic chuck 24 simultaneously, but rather the first adsorption unit ① along the first side. Apply sequentially from to the third adsorption section (③). That is, as shown in FIG. 5A, the voltage control unit 32 first applies a third voltage to the three sub-electrode units 241, 244, and 247 constituting the first adsorption unit ①, and then, The third voltage is applied to the three sub-electrode parts 242, 245, and 248 constituting the second adsorption part ②, and the remaining three sub-electrode parts 243, 246 constituting the third adsorption part ③. , 249).

In this way, the adsorption of the mask M to the electrostatic chuck 24 is a part corresponding to the first adsorption part 1 of the mask M as the starting point of adsorption, and the mask M from the starting point of this adsorption. After passing through the central portion and proceeding toward the third adsorption portion (③) side (that is, adsorption of the mask M proceeds in the X direction), the mask M, wrinkles are generated in the central portion of the mask M It can be adsorbed on the electrostatic chuck 24 without being flat.

In the present embodiment, the electrostatic chuck 24 has been described as applying the third voltage ΔV3 in a state sufficiently close to or in contact with the mask M, but the electrostatic chuck 24 starts to descend toward the mask M You may apply a 3rd voltage (DELTA)V3 before, or during a fall.

5A to 5E, various embodiments for adsorbing the mask M to the electrostatic chuck 24 will be described.

According to the embodiment of the present invention shown in Figures 5a to 5e, the voltage control unit 32, the first adsorption unit (①) consisting of a part of the sub-electrode portion of the plurality of sub-electrode portion (241 to 249) as a starting point Thus, a third voltage is controlled to be sequentially applied to the remaining adsorption units in one or more directions. More specifically, the voltage control unit 32 controls to apply the third voltage first to the first adsorption unit ① formed of a part of the plurality of sub-electrode units 241 to 249. In addition, the voltage control unit 32 controls the third adsorption unit to sequentially apply the third voltage from the first adsorption unit ① to the remaining adsorption units of the electrostatic chuck 24 in one or more directions. That is, the voltage control unit 32 of the first adsorption unit (①), the second adsorption unit (②), the third adsorption unit (③), the fourth adsorption unit (④) and/or the fifth adsorption unit (⑤) Control so that the mask adsorption voltage is applied in order. Here, each of the first to fifth adsorption parts (① to ⑤) may be composed of one or more sub-electrode parts.

However, the embodiment illustrated in FIGS. 5A to 5E is based on the premise that the electrostatic chuck 24 has nine sub-electrode portions 241 to 249 as illustrated in FIG. 3C. However, according to the total number of sub-electrodes included in the electrostatic chuck 24 and/or its layout, the present invention may be implemented in other embodiments.

The first adsorption part (①) is composed of a part of the plurality of sub-electrode parts 241 to 249, as shown in FIGS. 5A to 5E. Therefore, the area of the first adsorption section (①) is smaller than the area of the adsorption surface of the entire electrostatic chuck 24. Thereby, a part (starting point of adsorption) of the mask M corresponding to the region of the first adsorption unit 1 can be selectively adsorbed to the electrostatic chuck 24 first. Thereafter, by controlling the application of the voltage to the remaining adsorption portion, the other portion of the mask M is sequentially adsorbed to the electrostatic chuck 24 in one or more directions from the origin of this adsorption. Thereby, the entire mask M is adsorbed without wrinkles, or wrinkles remain only near the periphery or corner of the mask M, which is adsorbed at the latest.

More specifically, the first adsorption unit (①), in the first direction in which adsorption proceeds (eg, the short side direction of the electrostatic chuck 24, the X direction), is a plurality of shorter than the length of the electrostatic chuck 24 It is preferable to be composed of a part of the sub-electrode portions 241 to 249. For example, the length in the first direction of the first adsorption portion (1) is equal to the length of the electrostatic chuck 24 in the first direction so that the position of the starting point of the mask M can be more precisely controlled. More preferably, it is 1/2 or less. The length in the first direction of the first adsorption section (①) referred to herein refers to the length of the longest part in the first direction of the first adsorption section (①).

The first adsorption unit (①) is in the second direction (for example, the long side direction of the electrostatic chuck 24 and the Y direction) that intersects the first direction parallel to the adsorption progression direction, and the length of the electrostatic chuck 24. It is preferable to be composed of a part of the plurality of sub-electrode portions 241 to 249 to be substantially the same or shorter. That is, when the length of the first adsorption portion (1) in the first direction is shorter than the length in the first direction of the electrostatic chuck 24, the length in the second direction is the second direction of the electrostatic chuck 24 It may be substantially the same as (see FIGS. 5A and 5B) or shorter (see FIGS. 5C to 5E).

When the length in the second direction of the first adsorption section (①) is smaller than the length in the second direction of the electrostatic chuck 24, the starting point of the mask adsorption is not only in the first direction but also in the second direction. Can be controlled.

In the embodiment of the present invention shown in Figures 5a to 5e, the first adsorption section (①) described in the first direction than the configuration of the length of the electrostatic chuck 24, the present invention is not limited to this, Some of the plurality of sub-electrode portions are selected as the first adsorption portion (①) so as to have various sizes and shapes as long as the origin of adsorption of the mask M can be controlled in at least one of the first direction and the second direction. Can be.

For example, the first adsorption unit (①) is substantially the same length as the electrostatic chuck 24 in the first direction, which is the short side of the electrostatic chuck 24, but is electrostatic in the second direction, which is the longest side of the electrostatic chuck 24. Some sub-electrode portions (for example, 241, 242, 243) may be configured to be shorter than the length of the chuck 24.

In the embodiment of the present invention, the position of the first adsorption part (①) is not particularly limited as long as the mask M is adsorbed to the electrostatic chuck 24 satisfactorily. For example, as shown in FIGS. 5A and 5D, the first adsorption unit (①) is disposed on the peripheral portion of the electrostatic chuck 24, or as shown in FIG. 5C, the first adsorption unit (①) Is disposed in the corner portion of the electrostatic chuck 24, or, as shown in Figures 5b and 5e, the first adsorption portion (①) may be disposed in the central portion of the electrostatic chuck 24.

More specifically, the first adsorption part (①), as shown in Figure 5a, along one side (eg, a long side corresponding to the Y axis) of the electrostatic chuck 24, a peripheral portion (sub-electrode parts 241, 244 and 247) 5C, or along the long side of the electrostatic chuck 24 as shown in FIG. 5B, extending to the central portion (sub-electrode portions 242, 245 and 248), or as shown in FIG. 5C, one corner of the electrostatic chuck 24 Located in the negative (sub-electrode portion 247), or in the center of one side of the electrostatic chuck 24 (sub-electrode portion 244) as shown in FIG. 5D, or as shown in 5e, of the electrostatic chuck 24 It may be located in the center (sub-electrode portion 245). However, the embodiment of the present invention is not limited to the configuration shown in FIGS. 5A to 5E, and the first adsorption portion (①) is a peripheral portion (eg, sub-electrode portions 241, 242 and along the short side of the electrostatic chuck 24). It may extend to the center portion (sub-electrode portion 242) of the short side, or to the center portion (sub-electrode portions 244, 245 and 246) along the short side.

In addition, regardless of the position of the first adsorption section (①), the electrostatic chuck control section 32 sequentially applies the mask adsorption voltage to the remaining adsorption sections in one or more directions starting from the first adsorption section (①). Control it as much as possible. More specifically, as shown in FIG. 5A, the mask adsorption voltage in the order of the second adsorption section (②) and the third adsorption section (③) toward the other side opposite to one side where the first adsorption section (①) extends. As shown in FIG. 5B, the mask adsorption voltage is applied to the second adsorption unit ② in both directions crossing the direction in which the first adsorption unit ① extends, as shown in FIG. 5C. In the direction from the one corner portion where the first adsorption portion (①) is located toward the other diagonal corner portion, the second adsorption portion (②), the third adsorption portion (③), the fourth adsorption portion (④) and the fifth adsorption The mask adsorption voltage is applied in the order of the part (⑤), or as shown in FIG. 5D, in the direction toward both ends along the side where the first adsorption part (①) is located and in the direction toward the opposite side of the one side. , Mask adsorption voltage is applied in the order of the second adsorption part (②), the third adsorption part (③) and the fourth adsorption part (④), or as shown in FIG. 5E, the first adsorption part (①) The mask adsorption voltage in the order of the second adsorption section (②) and the third adsorption section (③) from the central portion of the electrostatic chuck 24 positioned downward to the direction toward the periphery and the corner portion of the electrostatic chuck 24 This can be applied. As a result, the adsorption portion to which the mask adsorption voltage is applied last can be located at the periphery of the electrostatic chuck 24 (see FIGS. 5A and 5B) or at one or more corner portions (see FIGS. 5C to 5E).

According to this, a part of the mask M corresponding to the first adsorption part 1 of the electrostatic chuck 24 serves as a starting point for adsorption. In addition, adjacent portions of the mask M are sequentially adsorbed to the electrostatic chuck 24 in one or more directions from the origin of this adsorption, and the end point of adsorption is not the central portion of the mask M but the periphery or corner portion. do. As a result, even if the entire mask M is adsorbed to the electrostatic chuck 24 without wrinkles, or even if wrinkles remain, it remains at the end, such as the periphery or corner, rather than the central portion of the mask M. That is, even if wrinkles may remain in an area other than the device formation area of the substrate S, the possibility of wrinkles remaining in the device formation area corresponding to the central portion of the mask M can be reduced.

Particularly, as in the embodiment illustrated in FIG. 5C, when the first adsorption part (①) is located at the corner portion of the electrostatic chuck 24, adsorption is initiated from the corner portion of the mask M corresponding thereto, and the diagonal direction is started. As the adsorption is sequentially performed, adsorption is terminated at the opposite corner portion, so that the mask M can be adsorbed so that no wrinkles remain or remain at the corner portion. And, as in the embodiment shown in Figure 5d, when the first adsorption unit (①) is located in the center of one side of the electrostatic chuck 24, adsorption is initiated at the center of the side of the mask M corresponding thereto, and sequentially Adsorption proceeds and adsorption ends at the edges of the sides opposite to both ends of the sides, so that the mask M can be adsorbed so that no wrinkles remain or remain at the edges or corners of the periphery.

In addition, as shown in the embodiment illustrated in FIGS. 5B and 5E, when the first adsorption unit ① is located in the center of the electrostatic chuck 24, it is possible to adsorb the mask M more quickly. The mask M is supported by the mask support unit 23 in a state in which a predetermined tension is applied from opposite sides to expand as flat as possible. In this case, the center portion is tensioned rather than the periphery of the mask M. The relatively weak portion of the mask M corresponding to the first adsorption part ① can be adsorbed to the electrostatic chuck 24 more quickly.

In the embodiments of the present invention, the size of the first adsorption unit (①) is also not particularly limited. For example, the first adsorption part (①) is an area including three sub-electrode parts among nine sub-electrode parts having the same size as shown in FIGS. 5A and 5B, or shown in FIGS. 5C to 5E. As described above, it may be a region including one sub-electrode portion. However, the present embodiment is not limited to this, and the first adsorption unit (①) may include two sub-electrode units, or a region including four or more sub-electrode units. However, the area of the mask M where the adsorption of the mask M is initiated at one part of the mask M and the remaining parts can be sequentially adsorbed toward one or more directions, and is also first adsorbed by the electrostatic chuck 24 In order to avoid possible wrinkles, the size of the first adsorption part (①) is preferably 1/2 or less of the entire adsorption surface of the electrostatic chuck 24.

Particularly, as shown in FIGS. 5C to 5E, when the first adsorption part (①) is composed of only one sub-electrode part, adsorption of the mask M is started in a relatively small area. Different parts of the mask M are sequentially adsorbed in one or more directions from. As a result, wrinkles remaining in the mask M adsorbed on the electrostatic chuck 24 can be reduced.

According to the above-described embodiment of the present invention, in the mask adsorption process of adsorbing the mask M onto the electrostatic chuck 24 over the substrate S, the mask adsorption voltage is first applied to a region of the electrostatic chuck 24. By forming a starting point of adsorption, the mask adsorption voltage is sequentially applied to other regions of the electrostatic chuck 24 in one or more directions, thereby sequentially adsorbing the mask from the formed starting point of adsorption. Thereby, the mask M can be adsorbed onto the electrostatic chuck 24 over the substrate S so that no wrinkles remain, or it can remain in an area other than the device formation area of the substrate S even if wrinkles remain.

<Deposition process>

Hereinafter, a film forming method employing the voltage control of the electrostatic chuck of the present embodiment will be described.

In the state where the mask M is supported by the mask support unit 23 in the vacuum container 21, the substrate is transferred into the vacuum container 21 of the film forming apparatus 11 by the transport robot 14 of the transport chamber 13. It is brought in.

The hand of the transport robot 14 that has entered the vacuum container 21 descends to place the substrate S on the support portion of the substrate support unit 22.

Subsequently, after the electrostatic chuck 24 descends toward the substrate S and sufficiently approaches or contacts the substrate S, the first voltage ΔV1 is applied to the electrostatic chuck 24 to adsorb the substrate S. .

In one embodiment of the present invention, the voltage applied to the electrostatic chuck 24 is removed after adsorption of the substrate to the electrostatic chuck 24 is completed in order to ensure the time required to separate the substrate from the electrostatic chuck 24 to the maximum. It is lowered from one voltage (ΔV1) to the second voltage (ΔV2). Even if the voltage applied to the electrostatic chuck 24 is lowered to the second voltage ΔV2, it takes time until the polarized charge induced in the substrate by the first voltage ΔV1 is discharged. The adsorption power to the substrate by 24) can be maintained.

In the state where the substrate S is adsorbed to the electrostatic chuck 24, the substrate S is lowered toward the mask M in order to measure the positional displacement of the substrate S relative to the mask M. In another embodiment of the present invention, in order to reliably prevent the substrate from falling off from the electrostatic chuck 24 during the descending process of the substrate adsorbed on the electrostatic chuck 24, after the descending process of the substrate is completed (that is, described later) Immediately before the alignment process is started), the voltage applied to the electrostatic chuck 24 is lowered to the second voltage ΔV2.

When the substrate S is lowered to the measurement position, the alignment marks formed on the substrate S and the mask M are photographed with the alignment camera 20 to measure the relative positional deviation between the substrate and the mask. In another embodiment of the present invention, the voltage applied to the electrostatic chuck 24 is applied to the electrostatic chuck 24 after the measurement process for alignment is completed (during the alignment process) in order to further increase the accuracy of the measurement process of the relative positions of the substrate and the mask. Lower it to voltage. That is, the precision of the measurement process can be improved by photographing the alignment marks of the substrate and the mask in a state where the substrate is strongly adsorbed to the electrostatic chuck 24 by the first voltage ΔV1 (the substrate is held flat). have.

As a result of the measurement, when the positional displacement of the substrate relative to the mask is found to exceed the threshold, the substrate S adsorbed to the electrostatic chuck 24 is moved in the horizontal direction (XYθ direction) to position the substrate relative to the mask. Adjust (alignment). In another embodiment of the present invention, the voltage applied to the electrostatic chuck 24 after this positioning process is completed is lowered to the second voltage ΔV2. Through this, the precision can be further increased over the entire alignment process (relative position measurement and position adjustment).

After the alignment process, the mask M is adsorbed onto the electrostatic chuck 24 over the substrate S. To this end, a third voltage ΔV3 having a magnitude equal to or greater than a second voltage is applied to the electrostatic chuck 24 including a plurality of adsorption parts. At this time, a third voltage (ΔV3) is first applied to one of the plurality of adsorption units, and a third voltage (ΔV3) is sequentially applied to the remaining adsorption units in one or more directions.

After the adsorption process of the mask M is completed, the voltage applied to the electrode portion or sub-electrode portion of the electrostatic chuck 24 is a voltage capable of maintaining the state in which the substrate and the mask are adsorbed to the electrostatic chuck 24, It is lowered to the fourth voltage (ΔV4). Through this, it is possible to shorten the time taken to separate the substrate S and the mask M from the electrostatic chuck 24 after the deposition process is completed.

Subsequently, the shutter of the evaporation source 25 is opened and the evaporation material is deposited on the substrate S through a mask.

After deposition to a desired thickness, the voltage applied to the electrode portion or sub-electrode portion of the electrostatic chuck 24 is lowered to a fifth voltage (ΔV5) to separate the mask M, and only the substrate is adsorbed on the electrostatic chuck 24 In the finished state, the substrate is raised by the electrostatic chuck Z actuator 28. Here, the fifth voltage (ΔV5), the mask (M) is separated, only the substrate (S) has a size for maintaining the state adsorbed on the electrostatic chuck 24, a voltage of substantially the same voltage as the second voltage to be.

Subsequently, the hand of the transfer robot 14 enters the vacuum container 21 of the film forming apparatus 11, and a voltage of zero or reverse polarity is applied to the electrode part or sub-electrode part of the electrostatic chuck 24, The substrate S is separated from the electrostatic chuck 24. Subsequently, the substrate on which deposition has been completed is carried out from the vacuum container 21 by the transfer robot 14.

In the above description, the film forming apparatus 11 is configured as a so-called up-deposition method (Depo-up) in which the film is formed while the film forming surface of the substrate S is directed downward in the vertical direction, but is not limited thereto. The configuration in which (S) is arranged vertically on the side surface of the vacuum container 21 and the film formation is performed in a state where the film forming surface of the substrate S is parallel to the gravity direction.

<Method of manufacturing an electronic device>

Next, an example of a method of manufacturing an electronic device using the film forming apparatus of the present embodiment will be described. Hereinafter, a configuration and a manufacturing method of an organic EL display device will be exemplified as an example of an electronic device.

First, an organic EL display device to be manufactured will be described. Fig. 6(a) shows an overall view of the organic EL display device 60, and Fig. 6(b) shows a cross-sectional structure of one pixel.

As shown in Fig. 6(a), a plurality of pixels 62 having a plurality of light emitting elements are arranged in a matrix form in the display area 61 of the organic EL display device 60. Although the details will be described later, each of the light emitting elements has a structure including an organic layer sandwiched between a pair of electrodes. In addition, the pixel referred to here refers to a minimum unit that enables a desired color display in the display area 61. In the case of the organic EL display device according to the present embodiment, the pixel 62 is constituted by a combination of the first light emitting element 62R, the second light emitting element 62G, and the third light emitting element 62B showing different light emission. It is done. The pixel 62 is often composed of a combination of a red light-emitting element, a green light-emitting element, and a blue light-emitting element, but may be a combination of a yellow light-emitting element, a cyan light-emitting element, or a white light-emitting element. no.

Fig. 6(b) is a partial cross-sectional schematic view taken along line A-B in Fig. 6(a). The pixel 62 has an organic EL element having an anode 64, a hole transport layer 65, a light emitting layer 66R, 66G, and 66B, an electron transport layer 67, and a cathode 68 on the substrate 63. . Of these, the hole transport layer 65, the light emitting layers 66R, 66G, and 66B, and the electron transport layer 67 correspond to the organic layer. In the present embodiment, the light emitting layer 66R is an organic EL layer emitting red, the light emitting layer 66G is an organic EL layer emitting green, and the light emitting layer 66B is an organic EL layer emitting blue. The light emitting layers 66R, 66G, and 66B are formed in a pattern corresponding to light emitting elements (sometimes referred to as organic EL elements) emitting red, green, and blue, respectively. In addition, the anode 64 is formed separately for each light emitting element. The hole transport layer 65, the electron transport layer 67, and the cathode 68 may be formed in common with the plurality of light emitting elements 62R, 62G, and 62B, or may be formed for each light emitting element. In addition, in order to prevent the anode 64 and the cathode 68 from being shorted by a foreign material, an insulating layer 69 is provided between the anode 64. In addition, since the organic EL layer is deteriorated by moisture or oxygen, a protective layer 70 for protecting the organic EL element from moisture and oxygen is provided.

In FIG. 6(b), the hole transport layer 65 or the electron transport layer 67 is illustrated as one layer, but according to the structure of the organic EL display device, it may be formed of a plurality of layers including a hole block layer or an electron block layer. It may be. Further, between the anode 64 and the hole transport layer 65, a hole injection layer having an energy band structure capable of smoothly injecting holes from the anode 64 into the hole transport layer 65 may be formed. . Likewise, an electron injection layer may be formed between the cathode 68 and the electron transport layer 67.

Next, an example of a method of manufacturing an organic EL display device will be specifically described.

First, a substrate 63 on which a circuit (not shown) and an anode 64 for driving the organic EL display device are formed is prepared.

An acrylic resin is spin-coated on the substrate 63 on which the anode 64 is formed, and the insulating layer 69 is formed by patterning the acrylic resin so that an opening is formed in a portion where the anode 64 is formed by lithography. This opening corresponds to a light emitting region in which the light emitting element actually emits light.

The substrate 63 on which the insulating layer 69 is patterned is carried into the first organic material deposition apparatus to hold the substrate with an electrostatic chuck, and the hole transport layer 65 is deposited as a common layer on the anode 64 of the display area. . The hole transport layer 65 is formed by vacuum deposition. In practice, since the hole transport layer 65 is formed to have a larger size than the display area 61, a high-precision mask is not required.

Next, the substrate 63 formed up to the hole transport layer 65 is carried into the second organic material film forming apparatus and held by an electrostatic chuck. Alignment of the substrate and the mask is performed, the mask is held over the substrate with an electrostatic chuck, and a light emitting layer 66R emitting red color is formed in a portion where the element emitting red color of the substrate 63 is disposed.

Similar to the film formation of the light emitting layer 66R, a green light emitting layer 66G is formed by a third organic material film forming apparatus, and further, a blue light emitting layer 66B is formed by a fourth organic material film forming apparatus. After the film formation of the light emitting layers 66R, 66G, and 66B is completed, the electron transport layer 67 is formed over the entire display area 61 by the fifth organic material film forming apparatus. The electron transport layer 67 is formed as a common layer for the three color light emitting layers 66R, 66G, and 66B.

The substrate formed up to the electron transport layer 67 is moved to a metal deposition material deposition apparatus to form the cathode 68.

According to the present invention, when the mask is adsorbed onto the electrostatic chuck 24 over the substrate in the film forming process, a voltage for first adsorbing the mask is applied to one adsorption part among a plurality of adsorption parts of the electrostatic chuck 24, thereby By sequentially applying the mask adsorption voltage to the remaining adsorption portions in one or more directions, wrinkles may not be formed on the adsorbed mask or even if wrinkles remain, wrinkles may remain on the periphery of the mask. As a result, the film formation in the device formation region of the substrate can be performed satisfactorily and the yield of the film formation process can be improved.

Then, the protective layer 70 is formed by moving to a plasma CVD apparatus to complete the organic EL display device 60.

The light emitting layer made of an organic EL material is exposed to an atmosphere containing moisture or oxygen from when the substrate 63 on which the insulating layer 69 is patterned is brought into the film forming apparatus until the film formation of the protective layer 70 is completed. There is a risk of deterioration by moisture or oxygen. Therefore, in this example, the substrate is brought in and out between the film forming apparatuses in a vacuum atmosphere or an inert gas atmosphere.

The above embodiment shows an example of the present invention, and the present invention is not limited to the configuration of the above embodiment, and may be appropriately modified within the scope of the technical idea.

11: film forming apparatus
21: vacuum container
22: substrate support unit
23: mask support unit
24: electrostatic chuck
30: electrostatic chuck system
31: voltage application unit
32: voltage control
① ~ ⑤: 1st adsorption part ~ 5th adsorption part

Claims (21)

An electrostatic chuck system for adsorbing a second adsorbent with a first adsorbent and the first adsorbent interposed therebetween,
An electrostatic chuck having a plurality of adsorption parts,
A voltage application unit for applying a voltage to the plurality of adsorption units;
It includes a voltage control unit for controlling the application of the voltage by the voltage application unit,
A voltage is independently applied to each of the plurality of adsorption parts,
The voltage control unit,
The adsorption voltage for adsorbing the second adsorbed body includes at least one of the plurality of adsorption parts of the electrostatic chuck, the adsorption part located at the center of the electrostatic chuck, or the first adsorption part located at the center of one side of the electrostatic chuck. Sequentially applied in the direction,
Until the adsorption voltage is applied to all of the plurality of adsorption sections, the voltage applied to the adsorption section to which the adsorption voltage is applied among the plurality of adsorption sections is maintained at the adsorption voltage,
After the adsorption voltage is applied to all of the plurality of adsorption parts, the adsorption holding voltage for maintaining the state in which the second adsorbent is adsorbed is smaller than the adsorption voltage and applied to the plurality of adsorption parts. An electrostatic chuck system characterized by controlling a voltage application unit.
The electrostatic chuck system according to claim 1, wherein a length in the at least one direction of the first adsorption unit is smaller than a length in the at least one direction of the electrostatic chuck.
The electrostatic chuck system according to claim 2, wherein a length in the at least one direction of the first adsorption unit is 1/2 or less of a length in the at least one direction of the electrostatic chuck.
The electrostatic chuck system according to claim 1, wherein an area of the first adsorption unit is 1/2 or less of an area of the adsorption surface of the electrostatic chuck.
delete The method of claim 1, wherein the first adsorption unit extends along one side of the electrostatic chuck at the central portion of the electrostatic chuck, and the voltage control unit sequentially applies the adsorption voltage in both directions crossing the one side from the first adsorption unit. Electrostatic chuck system characterized in that the control to be applied.
The method according to claim 1, wherein the first adsorption unit is located at a central portion of one side of the electrostatic chuck, and the voltage control unit is directed toward both ends of the one side from the first adsorption unit and toward the opposite side of the one side. Electrostatic chuck system, characterized in that to sequentially control the adsorption voltage is applied.
delete The method of claim 1, wherein the first adsorption unit is located in the center of the electrostatic chuck, and the voltage control unit controls the adsorption voltage to be sequentially applied in a direction from the first adsorption unit toward the peripheral and corner portions of the electrostatic chuck. Electrostatic chuck system, characterized in that.
A film forming apparatus for forming a film through a mask on a substrate,
And an electrostatic chuck system for adsorbing the substrate as a first adsorbent and a mask as a second adsorbent beyond the substrate,
The electrostatic chuck system is an electrostatic chuck system according to any one of claims 1 to 4, 6, 7, and 9.
A method for adsorbing a first adsorbent and a second adsorbent to an electrostatic chuck including a plurality of adsorbents,
A first adsorption step of applying a first adsorption voltage to the plurality of adsorption parts to adsorb the first adsorbed object to the electrostatic chuck;
And a second adsorption step of independently applying a second adsorption voltage to each of the plurality of adsorption parts to adsorb the second adsorbent to the electrostatic chuck with the first adsorbent therebetween,
In the second adsorption step,
Among the plurality of adsorption units, the second adsorption voltage is sequentially applied in at least one direction from a first adsorption unit located at a central portion of one side of the electrostatic chuck or including an adsorption unit located at a central portion of the electrostatic chuck,
Until the second adsorption voltage is applied to all of the plurality of adsorption sections, the voltage applied to the adsorption section to which the second adsorption voltage is applied among the plurality of adsorption sections is maintained at the second adsorption voltage,
After the second adsorption step, a third adsorption step of applying a third adsorption voltage for maintaining the state in which the second adsorbent is adsorbed is smaller than the second adsorption voltage to the plurality of adsorption parts. Adsorption method, characterized in that.
delete 12. The method of claim 11, The first adsorption portion is extended along one side of the electrostatic chuck in the central portion of the electrostatic chuck,
In the second adsorption step, the adsorption method characterized in that the second adsorption voltage is sequentially applied in both directions crossing the one side from the first adsorption unit.
The method of claim 11, wherein the first adsorption portion is located in the central portion of one side of the electrostatic chuck,
In the second adsorption step, the adsorption method characterized in that the second adsorption voltage is sequentially applied from the first adsorption section in the direction toward both ends along the one side and the opposite side of the one side.
delete The method of claim 11, wherein the first adsorption portion is located in the center of the electrostatic chuck,
In the second adsorption step, the adsorption method characterized in that the second adsorption voltage is sequentially applied from the first adsorption section toward the peripheral and corner portions of the electrostatic chuck.
As a film forming method for depositing a deposition material on a substrate through a mask,
Bringing the mask into the vacuum container,
Bringing the substrate into the vacuum container,
A first adsorption step of applying a first adsorption voltage to a plurality of adsorption parts of the electrostatic chuck to adsorb the substrate to the electrostatic chuck;
A second adsorption step of independently applying a second adsorption voltage to each of the plurality of adsorption parts of the electrostatic chuck and adsorbing the mask to the electrostatic chuck with the substrate interposed therebetween;
And depositing a deposition material on the substrate through the mask by evaporating the deposition material while the substrate and the mask are adsorbed on the electrostatic chuck.
In the second adsorption step,
Among the plurality of adsorption units, the second adsorption voltage is sequentially applied in at least one direction from a first adsorption unit located at a central portion of one side of the electrostatic chuck or including an adsorption unit located at a central portion of the electrostatic chuck,
Until the second adsorption voltage is applied to all of the plurality of adsorption sections, the voltage applied to the adsorption section to which the second adsorption voltage is applied among the plurality of adsorption sections is maintained at the second adsorption voltage,
And after the second adsorption step, a third adsorption step of applying a third adsorption voltage to maintain a state in which the mask is adsorbed, which is smaller than the second adsorption voltage to the plurality of adsorption parts. The film forming method.
A method for manufacturing an electronic device, wherein the electronic device is manufactured using the film-forming method of claim 17.
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