JPH06204325A - Electrostatic attraction device and its method - Google Patents
Electrostatic attraction device and its methodInfo
- Publication number
- JPH06204325A JPH06204325A JP34817592A JP34817592A JPH06204325A JP H06204325 A JPH06204325 A JP H06204325A JP 34817592 A JP34817592 A JP 34817592A JP 34817592 A JP34817592 A JP 34817592A JP H06204325 A JPH06204325 A JP H06204325A
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- JP
- Japan
- Prior art keywords
- electrostatic
- adsorption
- voltage
- electrode plate
- dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、静電吸着装置およびそ
の吸着方法に係り、特に、例えば、導体またはシリコン
ウエハのような半導体など微細加工に供される試料を固
定保持するのに好適な静電吸着装置およびその吸着方法
に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrostatic chucking device and a chucking method therefor, and is particularly suitable for fixing and holding a sample to be subjected to fine processing such as a conductor or a semiconductor such as a silicon wafer. The present invention relates to an electrostatic adsorption device and its adsorption method.
【0002】[0002]
【従来の技術】例えば、半導体ウエハ等の試料に対し、
エッチング,スパッタ,気相成長法(CVD)等により
成膜を施す場合には、試料を装置の所定の位置に固定保
持することが必要となる。特に、半導体ウエハ上に微細
パターンを加工する場合には、ウエハのパターン焼き付
けのため、反りを矯正して平坦化を図る、あるいは、ス
ッパッタ,成膜時の熱伝導率向上を図るなどの目的で、
ウエハを確実に保持手段に密着固定することが要求され
る。2. Description of the Related Art For example, for a sample such as a semiconductor wafer,
When a film is formed by etching, sputtering, vapor phase epitaxy (CVD) or the like, it is necessary to fix and hold the sample at a predetermined position of the device. In particular, when processing a fine pattern on a semiconductor wafer, for the purpose of patterning the wafer, the warp is corrected and flattened, or the spatter and the thermal conductivity at the time of film formation are improved. ,
It is required that the wafer be securely fixed to the holding means.
【0003】従来から、このような用途の試料保持手段
として、真空中でも使用でき、またウエハ裏面全面にて
吸着力を発生させることができる静電吸着装置が用いら
れている。さらに、真空中でウエハ保持ができるため、
真空中高速搬送の保持装置としても利用されている。こ
の静電吸着装置は、電極板と誘電体とを積み重ね(積
層)して構成され、電極板と試料との間に電位差を生じ
させることによりクーロン力を発生させ、誘電体上に試
料を吸着保持させるものである。このような静電吸着装
置に関しては、例えば、特開昭58−114437号公
報、特開昭59−79545号公報等が知られている。Conventionally, as a sample holding means for such an application, an electrostatic adsorption device which can be used even in a vacuum and which can generate an adsorption force on the entire back surface of a wafer has been used. Furthermore, because the wafer can be held in a vacuum,
It is also used as a holding device for high-speed transportation in vacuum. This electrostatic adsorption device is configured by stacking (laminating) an electrode plate and a dielectric substance, and by generating a potential difference between the electrode plate and the sample, a Coulomb force is generated and the sample is adsorbed on the dielectric substance. It is to hold it. Regarding such an electrostatic adsorption device, for example, Japanese Patent Laid-Open Nos. 58-114437 and 59-79545 are known.
【0004】[0004]
【発明が解決しようとする課題】ところで、すでに述べ
たように半導体製造行程におけるエッチング,スパッ
タ,CVD等、半導体ウエハ上に微細パターンを加工す
る場合には、ウエハの反りを矯正して平坦化を行う、あ
るいは、熱伝導率を向上するためウエハを確実に保持手
段に密着固定すること等が要求される。しかし、前記特
開昭58−114437号公報に記載された開示例で
は、静電吸着装置によってウエハの反りが矯正され、確
実に固定保持されたか否かの確認手段が考慮されていな
かった。By the way, as already mentioned, when a fine pattern is processed on a semiconductor wafer by etching, sputtering, CVD, etc. in the semiconductor manufacturing process, the warp of the wafer is corrected to flatten it. In order to improve the thermal conductivity, it is necessary to firmly fix the wafer to the holding means. However, in the disclosed example disclosed in Japanese Patent Laid-Open No. 58-114437, the means for confirming whether or not the warp of the wafer has been corrected by the electrostatic attraction device and whether the wafer has been securely fixed is not considered.
【0005】また、特開昭59−79545号公報に記
載された開示例においては、静電吸着の確認手段として
静電吸着装置を構成する回路に流れる電流値によって、
ウエハが固定保持されたか否かの確認手段としている
が、プロセスを経てきたウエハの被吸着面には、プロセ
スの種類によって異なった膜が形成されており、抵抗値
が異なることから、測定された電流値によって真に平坦
化されたか否かを判断する基準が明確でなく不十分なも
のであった。さらに、上記の開示例では、いずれも電圧
の印加方法、すなわち吸着のさせ方に配慮が足らず、効
果的なウエハ平坦度の矯正がなされていなかった。Further, in the disclosed example disclosed in Japanese Patent Laid-Open No. 59-79545, according to the value of the current flowing in the circuit constituting the electrostatic attraction device as the electrostatic attraction confirmation means,
Although it is used to confirm whether or not the wafer is fixedly held, different films are formed on the attracted surface of the wafer that has undergone the process depending on the type of the process, and the resistance value is different. The criterion for judging whether or not the current level was truly flattened was not clear and was insufficient. Further, in each of the above-described disclosure examples, the voltage application method, that is, the method of attracting the voltage is not taken into consideration, and the wafer flatness is not effectively corrected.
【0006】本発明は、上記従来技術の問題点を解決す
るためになされたもので、本発明の目的は、まず第一
に、ウエハの反りが矯正され、被保持物が確実に吸着固
定されたことを確認しうる静電吸着装置を提供すること
にある。第二に、被保持物が確実に吸着固定されたか否
か、また平坦化されたか否かモニターできる静電吸着装
置の電圧印加方法を提供することにある。The present invention has been made in order to solve the above-mentioned problems of the prior art. The object of the present invention is, first of all, to correct the warp of the wafer and to securely suck and fix the object to be held. An object of the present invention is to provide an electrostatic adsorption device that can confirm the above. Secondly, it is to provide a voltage applying method for an electrostatic attraction device capable of monitoring whether or not a held object is securely attracted and fixed, and whether or not it is flattened.
【0007】[0007]
【課題を解決するための手段】上記第一の目的を達成す
るために、本発明の静電吸着装置に係る第一の発明の構
成は、電極板と誘電体とを積み重ね、前記電極板と被保
持物体との間に電位差を生じさせることによって前記誘
電体に前記被保持物体を吸着させる静電吸着装置におい
て、前記電極板、あるいは電極板および誘電体を二つ以
上に分割し、かつ、分割された部分を電気的に絶縁され
る構造として、それぞれ独立に電位差を発生させる電源
と、各回路に流れる電流を計測する手段とを設けたもの
である。In order to achieve the above first object, the structure of the first invention relating to the electrostatic chucking device of the present invention is such that an electrode plate and a dielectric are stacked and In an electrostatic adsorption device that attracts the held object to the dielectric by generating a potential difference between the held object, the electrode plate, or the electrode plate and the dielectric is divided into two or more, and, As a structure in which the divided portions are electrically insulated, a power source for independently generating a potential difference and a means for measuring a current flowing through each circuit are provided.
【0008】また、上記第一の目的を達成するために、
本発明の静電吸着装置に係る第二の発明の構成は、電極
板と誘電体とを積み重ね、前記電極板と被保持物体との
間に電位差を生じさせることによって前記誘電体に前記
被保持物体を吸着させる静電吸着装置において、前記吸
着力を発生させる誘電体および電極板内に、これとは独
立に誘電体および電極板を積み重ね、前記吸着力を発生
させる手段とは独立に、それぞれ電位差を発生させる電
源と各回路に流れる電流を計測する手段とを備えた吸着
確認手段を、前記吸着力を発生させる手段の電極板との
間を絶縁して二つ以上設けたものである。Further, in order to achieve the above first object,
The configuration of the second invention relating to the electrostatic chucking device of the present invention is to stack the electrode plate and the dielectric and to generate a potential difference between the electrode plate and the held object, thereby holding the held object on the dielectric. In an electrostatic attraction device for attracting an object, a dielectric and an electrode plate that generate the attraction force are stacked independently of the dielectric and the electrode plate, respectively, independently of the means that generates the attraction force. Two or more suction confirmation means provided with a power source for generating a potential difference and a means for measuring a current flowing through each circuit are provided so as to be insulated from the electrode plate of the means for generating the suction force.
【0009】上記第二の目的を達成するために、本発明
に係る静電吸着装置の吸着方法の構成は、電極板と誘電
体とを積み重ね、前記電極板と被保持物体との間に電位
差を生じさせることによって前記誘電体に前記被保持物
体を吸着させる静電吸着方法において、前記電極板、あ
るいは電極板および誘電体を、互いの間を絶縁し二つ以
上に分割して、それぞれ独立に電位差を発生させる電源
と吸着確認手段とを有する構成とし、前記吸着確認手段
からの情報によって、分割された静電吸着部分それぞれ
への印加電圧の大きさ、また、それぞれの電圧印加の開
始時間を、それぞれ独立に変化させるようにしたもので
ある。In order to achieve the above-mentioned second object, the structure of the adsorption method of the electrostatic adsorption device according to the present invention is such that the electrode plate and the dielectric are stacked and the potential difference between the electrode plate and the held object is In the electrostatic adsorption method of adsorbing the held object to the dielectric by generating the above, the electrode plate, or the electrode plate and the dielectric are insulated from each other and divided into two or more, respectively A power supply for generating a potential difference and a suction confirmation means are provided, and the magnitude of the voltage applied to each of the divided electrostatic attraction portions according to the information from the suction confirmation means, and the start time of each voltage application. Are to be changed independently of each other.
【0010】より詳しくは、吸着確認手段は、被保持物
体が下に凸の形状に変形があると判断したときは、ま
ず、二つ以上に分割した静電吸着部の中央部の静電吸着
部の電極に電圧を印加し、ついで周辺部の静電吸着部の
電極に向かって順次に、各静電吸着部に設けられた吸着
確認手段が、前記被保持物体の吸着を確認するまで電圧
を印加する。More specifically, when it is determined that the object to be held is deformed to have a downward convex shape, the attraction confirmation means first performs electrostatic attraction at the central portion of the electrostatic attraction section divided into two or more. Voltage is applied to the electrodes of the electrostatic chucking section, and then sequentially toward the electrodes of the electrostatic chucking section of the peripheral section until the chucking confirmation means provided in each electrostatic chucking section confirms the chucking of the held object. Is applied.
【0011】また、吸着確認手段は、被保持物体が上に
凸の形状に変形があると判断したときは、まず、二つ以
上に分割した静電吸着部の最周辺部の一静電吸着部の電
極に、吸着確認手段が吸着を確認するまで電圧を印加
し、ついで中央部、さらに最初吸着したのと反対側の最
周辺部の静電吸着部の電極に向かって順次に、各静電吸
着部に設けられた吸着確認手段が、前記被保持物体の吸
着を確認するまで電圧を印加する。さらに、静電吸着装
置において、被保持物体の吸着完了後、一旦徐々に電圧
を低下させて吸着を解除し、再び電圧を印加して前記被
保持物体を吸着し、その後、上述の吸着が解除された電
圧より若干高い値に電圧を設定するものである。Further, when it is determined that the held object is deformed into a convex shape, the suction confirmation means, first, one electrostatic attraction of the outermost portion of the electrostatic attraction unit divided into two or more. Voltage is applied to the electrodes of the parts until the adsorption confirmation means confirms the adsorption, and then the static electricity is adsorbed to the electrodes of the electrostatic adsorption part in the central part and the outermost peripheral part on the opposite side to the first adhering part. The adsorption confirmation means provided in the electroadsorption unit applies a voltage until the adsorption of the held object is confirmed. Further, in the electrostatic adsorption device, after the adsorption of the held object is completed, the voltage is gradually reduced to release the adsorption, the voltage is applied again to adsorb the retained object, and then the adsorption is released. The voltage is set to a value slightly higher than the applied voltage.
【0012】なお付記すると次のとおりである。上記第
一の目的は、静電吸着式試料保持装置の電極板、または
誘電体および電極板を、互いの間を絶縁して二つ以上に
分割し、各々独立に電位差を発生させる電源を有する回
路とし、かつ、各回路に流れる電流を計測する手段を付
加することによって達成される。The additional notes are as follows. The first object is to have a power source for dividing the electrode plate of the electrostatic adsorption type sample holding device, or the dielectric and the electrode plate into two or more by insulating them from each other and independently generating a potential difference. This is achieved by adding a circuit and means for measuring the current flowing through each circuit.
【0013】また、上記第二の目的は、静電吸着装置の
静電吸着部分を二つ以上の分割構造として、各々独立に
電位差を発生させる電源,吸着確認手段を有する構成と
し、吸着確認手段からの情報によって、分割された静電
吸着部分、各々への印加電圧の大きさ、また、各々の電
圧印加の開始時間を変化させる制御を行う。また、吸着
を開始させる時のみ大電圧を印加し、一旦、吸着した後
は電圧を降下させるよう電圧の制御を行うことによって
達成される。The second object is to have a structure in which the electrostatic attraction portion of the electrostatic attraction device is divided into two or more parts and has a power source for independently generating a potential difference and an attraction confirmation means. Based on the information from (1), control is performed to change the divided electrostatic attraction portions, the magnitude of the voltage applied to each, and the start time of each voltage application. Further, it can be achieved by applying a large voltage only when starting the adsorption and once controlling the voltage so that the voltage is lowered after the adsorption.
【0014】[0014]
【作用】本発明の試料保持装置は、電極板、あるいは誘
電体および電極板を互いの間を絶縁し分割構造にしてあ
り、各々独立に電位差を発生させる電源を有し、さらに
各回路に流れる電流を計測できる構成になっている。し
たがって、分割構造にした各静電吸着部に流れる電流値
が全て同等の値になった場合に平坦化は達成され、確実
に吸着保持されたと判断することができる。もし、平坦
化が達成されておらず、例えばウエハに反りが残ってい
る場合、分割されたいずれかの静電吸着部分はウエハと
接触しておらず電流が流れない。このときは、静電吸着
部分の印加する電圧を増加させればよい。The sample holding device of the present invention has an electrode plate, or a dielectric and an electrode plate, which are insulated from each other and have a divided structure. Each sample holding device has a power source for independently generating a potential difference and further flows to each circuit. It is configured to measure current. Therefore, it can be determined that the flattening is achieved and the attraction and holding is surely performed when all the current values flowing in the electrostatic attraction portions having the divided structure have the same value. If flattening is not achieved and, for example, the wafer still has a warp, one of the divided electrostatic attraction portions is not in contact with the wafer and no current flows. At this time, the voltage applied to the electrostatic attraction portion may be increased.
【0015】また、平坦化が達成されておらずウエハに
反りが残っている場合、静電吸着を行う部分を分割し、
吸着モニターからの情報によって、分割された静電吸着
部分、各々への印加電圧の大きさ、また、各々の電圧印
加の開始時間を変化させる制御を行えば、単に吸着面全
体に一様な力を発生させるよりも効果的にウエハの平坦
化を図ることが可能となる。Further, when the flattening is not achieved and the warp remains on the wafer, the portion for electrostatic attraction is divided,
By controlling the divided electrostatic adsorption parts, the magnitude of the applied voltage to each, and the start time of each voltage application according to the information from the adsorption monitor, the uniform force is applied to the entire adsorption surface. It is possible to effectively flatten the wafer rather than to generate.
【0016】[0016]
【実施例】以下、本発明の各実施例を図1ないし図14
を参照して説明する。 〔実施例 1〕図1は、本発明の一実施例に係る静電吸
着装置の構成を示す断面図、図2は、図1の装置におけ
るウエハ吸着作用を説明する要部拡大図である。図1,
2において、1は、固定保持され搬送される被保持物
体、例えば半導体ウエハ(以下単にウエハという)、
2,3,4は、それぞれ静電吸着装置を構成する分割さ
れた誘電体、5,6,7は、それぞれ静電吸着装置を構
成する分割された電極板、14は、ウエハ1から取られ
る導通部、8,9,10は、ウエハ1と電極板5,6,
7との間に電位差を発生させる電源、11,12,13
は、各回路に流れる電流を検知する電流計である。誘電
体2,3,4は、電極板5,6,7の上に積み重ねて積
層状態となっており、16は、分割された部分を電気的
に絶縁する絶縁材である。Embodiments of the present invention will be described below with reference to FIGS.
Will be described with reference to. [Embodiment 1] FIG. 1 is a cross-sectional view showing the structure of an electrostatic chucking device according to one embodiment of the present invention, and FIG. 2 is an enlarged view of a principal part for explaining a wafer chucking action in the device of FIG. Figure 1,
In reference numeral 2, 1 is a held object that is fixedly held and conveyed, such as a semiconductor wafer (hereinafter simply referred to as a wafer),
Reference numerals 2, 3 and 4 are divided dielectrics constituting the electrostatic adsorption device, reference numerals 5, 6 and 7 are divided electrode plates constituting the electrostatic adsorption device, and 14 is taken from the wafer 1. Conductive portions 8, 9, 10 are used for the wafer 1 and the electrode plates 5, 6, 6.
A power source for generating a potential difference between the
Is an ammeter that detects the current flowing through each circuit. The dielectrics 2, 3 and 4 are stacked and laminated on the electrode plates 5, 6 and 7, and 16 is an insulating material that electrically insulates the divided parts.
【0017】導通部14は、確実にウエハ1から導通を
取るため弱いばね系15を介してウエハ1に接触してい
る。また、誘電体2,3,4の抵抗率は使用温度で抵抗
率109mから1011Ωcmが好ましい。前記の各誘電
体2,3,4、電極板5,6,7、電源8,9,10、
電流計11,12,13は、吸着確認センサーと言うべ
き吸着モニターを構成している。17は、前記各センサ
ーから送られてくる距離の情報に従って、各電源8,
9,10により印加される電圧を制御する制御装置であ
る。18はアースを示す。The conducting portion 14 is in contact with the wafer 1 via a weak spring system 15 in order to ensure conduction from the wafer 1. The resistivity of the dielectrics 2, 3 and 4 is preferably 10 9 m to 10 11 Ωcm at the operating temperature. Each of the above-mentioned dielectrics 2, 3, 4, electrode plates 5, 6, 7, power supplies 8, 9, 10,
The ammeters 11, 12, and 13 form an adsorption monitor that should be called an adsorption confirmation sensor. Reference numeral 17 denotes each power source 8 according to the information on the distance sent from each sensor.
It is a control device for controlling the voltage applied by 9 and 10. 18 indicates a ground.
【0018】このように構成された静電吸着装置におけ
るモニター方法の動作について説明する。まず、ウエハ
1は静電吸着装置の吸着面2´,3´,4´に載せら
れ、電源8,9,10により、所定の電圧が電極板5,
6,7とウエハ1との間に印加される。そして、ウエハ
1は、このとき発生する静電気力によって吸着面2´,
3´,4´に吸着保持されるThe operation of the monitoring method in the electrostatic attraction device having the above structure will be described. First, the wafer 1 is placed on the attraction surfaces 2 ′, 3 ′, 4 ′ of the electrostatic attraction device, and a predetermined voltage is applied by the power sources 8, 9, 10 to the electrode plate 5, 5.
It is applied between 6, 7 and the wafer 1. Then, the wafer 1 is attracted to the attracting surface 2 ′ by the electrostatic force generated at this time,
Adsorbed and held on 3 ', 4'
【0019】ここで、誘電体2,3,4は同じ材質の誘
電体であり、抵抗率は同じ値であるから、もし、ウエハ
1が確実に平坦化されていれば、各回路には誘電体の単
位面積あたり同じ電流が流れていることになり、電流計
11,12,13は各誘電体の単位面積に換算すると同
じ電流値を検知する。すなわち、例えば、誘電体2,
3,4のウエハとの接触面積が同じであれば同じ電流値
となる。なお、上述の場合は誘電体は同じ材質であった
が、材質が異なっていても本発明の方法は予め電流値を
較正しておくことにより達成できる。Since the dielectrics 2, 3 and 4 are made of the same material and have the same resistivity, if the wafer 1 is surely flattened, each circuit has a dielectric. The same current is flowing per unit area of the body, and the ammeters 11, 12, and 13 detect the same current value when converted into the unit area of each dielectric. That is, for example, the dielectric 2,
If the contact areas with the wafers 3 and 4 are the same, the current values are the same. Although the dielectrics are made of the same material in the above case, the method of the present invention can be achieved by calibrating the current value in advance even if the materials are different.
【0020】もし、ウエハ1の一部の変形が矯正され
ず、誘電体2,3,4と接触していないような場合に
は、その部分の静電吸着装置を構成する回路に流れる電
流が他に比べて小さな値を示す。例えば、図2に示すよ
うに、ウエハ1は下に凸に変形しており、ウエハ1の周
辺部で、静電吸着装置の誘電体4に接触していない。静
電気力がウエハ1の変形力に勝てず、隙間hが空いてい
る状態である。この場合は、電流計12に比べて、電流
計13は小さな電流値を示すことになる。もし、全く接
触していなければ電流値はゼロを示す。If the deformation of a part of the wafer 1 is not corrected and it is not in contact with the dielectrics 2, 3 and 4, the current flowing through the circuit constituting the electrostatic adsorption device at that part is not affected. It shows a smaller value than others. For example, as shown in FIG. 2, the wafer 1 is convexly deformed downward, and is not in contact with the dielectric 4 of the electrostatic attraction device in the peripheral portion of the wafer 1. The electrostatic force cannot overcome the deformation force of the wafer 1 and the gap h is open. In this case, the ammeter 13 shows a smaller current value than the ammeter 12. If there is no contact, the current value shows zero.
【0021】このように、独立の回路を持った分割構造
の静電吸着装置を用い、各回路に流れる電流値を比較す
ることによって、ウエハ1が、各誘電体2,3,4の吸
着面2´,3´,4´に倣ったかどうかを判断させる。
これによって、ウエハ1全面が確実に固定保持され、平
坦化が達成されたかどうかをモニターする。もし、いず
れかの電流計が検知した電流値が他より低ければその部
分の印加電圧を上げて吸着力を増加させれば良い。静電
吸着力はウエハ1に反りがあり、ウエハ1と吸着面2
´,3´,4´に隙間が存在するときはその値が小さ
く、比較的大きな電圧が必要とされるが、一旦吸着固定
されれば、ウエハ1と吸着面との間に隙間がなくなるた
めに、吸着を維持するための電圧は比較的小さな電圧で
よい。As described above, the electrostatic attraction device having the divided structure having the independent circuit is used to compare the values of the currents flowing in the respective circuits. Ask them to decide whether they have followed 2 ', 3', 4 '.
By this, the entire surface of the wafer 1 is securely fixed and held, and it is monitored whether or not the flattening is achieved. If the current value detected by one of the ammeters is lower than the other, the applied voltage at that portion may be increased to increase the attraction force. The electrostatic attraction force causes the wafer 1 to warp, and the wafer 1 and the attraction surface 2
When there is a gap between ′, 3 ′ and 4 ′, the value is small and a comparatively large voltage is required, but once it is fixed by suction, there is no gap between the wafer 1 and the suction surface. In addition, the voltage for maintaining the adsorption may be a relatively small voltage.
【0022】したがって、電圧を増加させた後は、速や
かに他と同じ電圧まで降下させ、他と同等の電流値を示
せば平坦化が達成されたと判断して良い。また、ある電
圧のしきい値を決め、その値以上電圧を上げても平坦化
できない場合は、ウエハ1の初期たわみがありすぎ不良
であると判断するよう制御装置17に制御させれば、加
工プロセスをより円滑に進めることが可能になる。Therefore, after increasing the voltage, it is possible to determine that the flattening has been achieved by promptly lowering it to the same voltage as the others and showing a current value equivalent to the others. In addition, if the threshold value of a certain voltage is determined and the voltage cannot be flattened even if the voltage is increased more than that value, the control device 17 controls the wafer 1 so that it is judged to be defective because it has too much initial deflection. It will allow the process to proceed more smoothly.
【0023】すでに述べたように、静電吸着力はウエハ
1に反りがあり、ウエハ1と吸着面に隙間が存在すると
きはその値が小さく、比較的大きな電圧が必要とされる
が、一旦吸着固定されれば、ウエハ1と吸着面との間に
隙間がなくなるために、吸着を維持するための電圧は比
較的小さな電圧でよい。したがって、制御装置17に吸
着を開始させるときのみ大電圧を印加し、一旦、吸着し
た後は電圧を降下させるよう電圧コントロールさせれ
ば、ウエハ1に必要以上の電圧を長時間かける必要がな
くなり、省電力にもなる。As described above, the electrostatic attraction force is small when the wafer 1 is warped and there is a gap between the wafer 1 and the attraction surface, and a relatively large voltage is required. If fixed by suction, there is no gap between the wafer 1 and the suction surface, and therefore the voltage for maintaining suction may be a relatively small voltage. Therefore, if a large voltage is applied to the control device 17 only when the adsorption is started and the voltage is controlled so that the voltage is once dropped after the adsorption, it is not necessary to apply a voltage higher than necessary to the wafer 1 for a long time. It also saves power.
【0024】〔実施例 2〕先の実施例1では、各回路
の電極板が一枚であり、ウエハから導通を取る方式のい
わゆる単極型の静電吸着装置に関して説明したが、図3
に示すような双極型の静電吸着装置においても同様にモ
ニター動作ができる。図3は、本発明の他の実施例に係
る双極型静電吸着装置の構成を示す説明図である。図
中、図1と同一符号のものは先の実施例と同等機能のも
のである。この場合、電極板は5a,5b、6a,6
b、7a,7bの各2枚ずつ電極間に電圧が印加され
る。また、本実施例では、両端部、中央部と分割する構
造の例を示したが、特にこの構造に限られるものではな
く、例えば同心円状に分割する構造としても同様の効果
が得られる。[Embodiment 2] In the above-mentioned Embodiment 1, the so-called monopolar type electrostatic adsorption device of the type in which each circuit has one electrode plate and which conducts electricity from the wafer has been described.
Similarly, the monitor operation can be performed in the bipolar electrostatic adsorption device as shown in FIG. FIG. 3 is an explanatory diagram showing a configuration of a bipolar electrostatic attraction device according to another embodiment of the present invention. In the figure, the same reference numerals as those in FIG. 1 have the same functions as those of the previous embodiment. In this case, the electrode plates are 5a, 5b, 6a, 6
A voltage is applied between the electrodes of each of b, 7a, and 7b. Further, in the present embodiment, an example of a structure in which both ends and a central part are divided has been shown, but the present invention is not limited to this structure in particular, and the same effect can be obtained even if the structure is divided into concentric circles.
【0025】〔実施例 3〕次に、第二の発明の実施例
を図4を参照して説明する。図4は、本発明のさらに他
の実施例に係る静電吸着装置の構成を示す断面図であ
る。図中、図1と同一符号のものは先の実施例と同等部
分であるから、その説明を省略する。図4において、1
9は誘電体、23は電極板で、これらは積層されて静電
吸着装置を構成している。20,21,22は、誘電体
19に対して小さな断面積を持つ独立した複数個(本例
では3個)の誘電体、24,25,26は、それぞれ誘
電体20,21,22と積層された電極であり、それぞ
れ電源28,29,30、電流計31,32,33を備
え付けた回路構成となっている。すなわち、誘電体1
9,電極23の対には、静電吸着の役割をさせ、誘電体
20,21,22、電極24,25,26の対には、被
保持物体を吸着したか否かの吸着確認センサー、すなわ
ちモニターの役割をさせる。[Embodiment 3] Next, an embodiment of the second invention will be described with reference to FIG. FIG. 4 is a cross-sectional view showing the configuration of the electrostatic attraction device according to still another embodiment of the present invention. In the figure, those having the same reference numerals as those in FIG. In FIG. 4, 1
Reference numeral 9 is a dielectric, and 23 is an electrode plate, which are stacked to form an electrostatic attraction device. Reference numerals 20, 21, 22 are a plurality of independent dielectric bodies (three in this example) having a small cross-sectional area with respect to the dielectric body 19, and 24, 25, 26 are laminated with the dielectric bodies 20, 21, 22 respectively. The electrodes are provided with power supplies 28, 29, 30 and ammeters 31, 32, 33, respectively. That is, the dielectric 1
9, the pair of electrodes 23 is made to play a role of electrostatic attraction, and the pair of dielectrics 20, 21, 22 and electrodes 24, 25, 26 are suction confirmation sensors for confirming whether or not the held object is attracted. That is, it acts as a monitor.
【0026】ここで、誘電体20,21,22は同じ材
質の誘電体であり、抵抗率は同じ値であるから、もし、
被保持物体であるウエハ1が確実に平坦化されていれ
ば、各回路には誘電体の単位面積あたり同じ電流が流れ
ていることになる。誘電体20,21,22を同じ表面
積とすれば、電流計31,32,33は同じ値の電流値
を検知する。そして、ウエハ1の一部の変形が矯正され
ず、平坦化が達成されていないような場合には、その部
分の静電吸着装置を構成する回路に流れる電流が他に比
べて小さな値を示し、もし、全く接触していなければ電
流値はゼロを示す。Since the dielectrics 20, 21 and 22 are made of the same material and have the same resistivity, if
If the wafer 1 as the held object is surely flattened, the same current flows in each circuit per unit area of the dielectric. If the dielectrics 20, 21, 22 have the same surface area, the ammeters 31, 32, 33 detect the same current value. When the deformation of a part of the wafer 1 is not corrected and the flattening is not achieved, the current flowing through the circuit that constitutes the electrostatic adsorption device in that part shows a smaller value than the other. If there is no contact, the current value shows zero.
【0027】このように、独立の回路を持った誘電体,
電極の対20,24、21,25、22,26を、静電
吸着を行う誘電体,電極の対19,23の中に埋め込
み、それぞれの回路に流れる電流値を比較することによ
って、ウエハ1が、静電吸着面19´に倣ったかどうか
を判断させる。これによって、ウエハ1全面が確実に固
定保持され、平坦化が達成されたかどうかをモニターす
る。もし、いずれかの電流計が検知した電流値が他より
低ければ、静電吸着装置への印加電圧を上げて吸着力を
増加させれば良い。As described above, a dielectric having an independent circuit,
By embedding the electrode pairs 20, 24, 21, 25, 22, and 26 in the dielectrics and electrode pairs 19 and 23 that perform electrostatic adsorption, and comparing the current values flowing in the respective circuits, the wafer 1 , It is determined whether or not it follows the electrostatic attraction surface 19 '. By this, the entire surface of the wafer 1 is securely fixed and held, and it is monitored whether or not the flattening is achieved. If the current value detected by one of the ammeters is lower than the other, the applied voltage to the electrostatic attraction device may be increased to increase the attraction force.
【0028】なお、本実施例では静電吸着を行う誘電
体,電極板はそれぞれ1枚の例を示したが、第一の実施
例に示したように複数枚に分割して、それぞれ独立に電
気回路を設けて、独立に吸着力を発生させても良い。In this embodiment, the dielectric and the electrode plate for electrostatic attraction are each shown as one piece, but as shown in the first embodiment, they are divided into a plurality of pieces and are independently formed. An electric circuit may be provided to independently generate the suction force.
【0029】〔実施例 4〕また、上記実施例3では、
静電吸着装置の電極板が一枚であり、ウエハから導通を
取る方式のいわゆる単極型の静電吸着装置に関して説明
したが、双極型の静電吸着装置においても同様のモニタ
ー動作が可能である。図5は、本発明のさらに他の実施
例に係る双極型静電吸着装置の構成を示す説明図であ
る。図中、図4と同一符号のものは先の実施例と同等機
能のものである。図5の装置においては、静電吸着を行
う電極板は23a,23bであり、吸着のモニターを行
う部分の電極板は20a,20b、21a,21b、2
2a,22bの各2個ずつである。また、図3に示した
ように、静電吸着を行う誘電体,電極板を複数個持った
構造としても同様の効果が得られる。[Fourth Embodiment] In the third embodiment,
The so-called unipolar electrostatic adsorption device, which has a single electrode plate for the electrostatic adsorption device and is electrically connected from the wafer, has been described, but similar monitoring operation is also possible with a bipolar electrostatic adsorption device. is there. FIG. 5 is an explanatory diagram showing a configuration of a bipolar electrostatic attraction device according to still another embodiment of the present invention. In the figure, those having the same reference numerals as those in FIG. 4 have the same functions as those of the previous embodiment. In the apparatus shown in FIG. 5, the electrode plates that perform electrostatic attraction are 23a and 23b, and the electrode plates that monitor adsorption are 20a, 20b, 21a, 21b, and 2.
2 a and 22 b each. Further, as shown in FIG. 3, the same effect can be obtained even with a structure having a plurality of dielectrics and electrode plates that perform electrostatic attraction.
【0030】〔実施例 5〕次に本発明の静電吸着方法
に関する実施例を図6ないし図14を参照して説明す
る。本実施例は、第二の発明の実施例に示したウエハ吸
着モニターを用いた静電吸着装置を例にして説明する。
図6は、本発明のさらに他の実施例に係る静電吸着装置
の全体構成を示す説明図、図7は、ウエハが下方向に凸
に変形している状態を示す断面図、図8は、ウエハが吸
着された状態を示す断面図、図9は、図6の静電吸着装
置への電圧印加方法を説明する線図である。[Embodiment 5] Next, an embodiment of the electrostatic attraction method of the present invention will be described with reference to FIGS. 6 to 14. In this embodiment, an electrostatic chucking device using the wafer chucking monitor shown in the embodiment of the second invention will be described as an example.
FIG. 6 is an explanatory view showing the overall structure of an electrostatic attraction device according to still another embodiment of the present invention, FIG. 7 is a cross-sectional view showing a state in which the wafer is convexly deformed downward, and FIG. FIG. 9 is a cross-sectional view showing a state where the wafer is attracted, and FIG. 9 is a diagram illustrating a method of applying a voltage to the electrostatic attraction device of FIG.
【0031】静電気力は隙間の距離の2乗に比例して小
さくなるので、ウエハの変形量が大きく誘電体との隙間
が大きいような場合は平坦化が達成されないことがあ
る。図6において、静電吸着を行う誘電体は、34,3
5,36の三つに分割されており、それぞれに電極板3
7,38,39、電源40,41,42が備えられてい
る。それぞれの静電吸着を行う誘電体34,35,36
には、これらに対して小さな断面積を持つ複数個の誘電
体20,21,22と電極24,25,26の対に、そ
れぞれ電源28,29,30、電流計31,32,33
を備え付けた吸着確認手段に係る吸着モニターが内蔵さ
れている。Since the electrostatic force decreases in proportion to the square of the distance of the gap, flattening may not be achieved when the amount of deformation of the wafer is large and the gap between the wafer and the dielectric is large. In FIG. 6, the dielectrics that perform electrostatic attraction are 34 and 3
It is divided into three parts, 5 and 36, and each has an electrode plate 3
7, 38, 39 and power sources 40, 41, 42 are provided. Dielectrics 34, 35, 36 that perform electrostatic attraction
A pair of a plurality of dielectrics 20, 21, 22 and electrodes 24, 25, 26 having a small cross-sectional area with respect to them, a power supply 28, 29, 30 and an ammeter 31, 32, 33 respectively.
The built-in suction monitor is associated with the suction confirmation means.
【0032】まず、図7ないし図9を参照して、具体的
吸着方法の一例を、ウエハ1が下方向に凸に変形してい
る場合について説明する。図7,8では、図6に示した
ような電源系統の図示は省略してある。電極板37,3
8,39に所定の電圧V1を印加し、吸着力を発生させ
る。これで平坦化が達成されれば良いが、ウエハ1の変
形量が大きく誘電体との隙間が大きいような場合は平坦
化が達成されない。First, an example of a specific suction method will be described with reference to FIGS. 7 to 9 when the wafer 1 is deformed to be convex downward. 7 and 8, the illustration of the power supply system as shown in FIG. 6 is omitted. Electrode plate 37,3
A predetermined voltage V1 is applied to 8 and 39 to generate an attractive force. It is sufficient if the flattening is achieved by this, but the flattening is not achieved when the deformation amount of the wafer 1 is large and the gap between the wafer 1 and the dielectric is large.
【0033】このような場合、まず両端の電極板37,
39への印加電圧を吸着モニターの誘電体,電極の対2
0,24、21,25、22,26が平坦化を検知する
まで増加させる(電圧V2,V3)。この場合、隙間が
小さい方がウエハ1への吸着力は大きく作用するから、
ウエハが吸着面34´,36´から離れる部分43,4
4から、外側に向かって徐々に吸着され平坦化されるこ
とになる。In such a case, first, the electrode plates 37 at both ends are
The applied voltage to 39 is the adsorption monitor dielectric, electrode pair 2
Increase until 0, 24, 21, 25, 22, 26 detect flattening (voltages V2, V3). In this case, the smaller the gap, the greater the attraction force to the wafer 1,
Areas 43, 4 where the wafer leaves the suction surfaces 34 ', 36'
From 4, it is gradually adsorbed toward the outside and is flattened.
【0034】ところで、ウエハ上の素子保護のため、印
加する電圧は小さい方が好ましい。一旦吸着され、平坦
化が達成されるとウエハ1と吸着面34´,35´,3
6´には隙間がなくなり、吸着力はウエハ1が変形して
いて隙間があった時点に比べて大きくなっている。した
がって、吸着を維持するためだけであれば、印加電圧を
落とすことができる。予め所定の電圧が決まっている場
合にはその電圧まで落として良い。特に所定の電圧が決
まっていない場合、吸着維持のための最低電圧で使用す
ればウエハ1へのダメージが少なくなり好ましい。も
し、所定の電圧まで落とす途中でウエハ1が離れてしま
った場合、あるいは最低電圧を見いだすため電圧を下げ
ていった際にウエハ1が離れてしまった場合(電圧V
4)は、もう一度、電圧V1,V2,V3を印加してウ
エハ1を吸着させ、あらためてウエハ1がはずれてしま
った電圧V4より少し高めに設定した電圧V5にすれば
良い。By the way, it is preferable that the applied voltage is small in order to protect the elements on the wafer. Once suctioned and flattened, the wafer 1 and suction surfaces 34 ', 35', 3
6'has no gap, and the suction force is larger than when the wafer 1 was deformed and there was a gap. Therefore, the applied voltage can be reduced only to maintain the adsorption. When the predetermined voltage is determined in advance, it may be lowered to that voltage. In particular, when the predetermined voltage is not determined, it is preferable to use the lowest voltage for maintaining the adsorption because damage to the wafer 1 is reduced. If the wafer 1 separates during the process of dropping it to a predetermined voltage, or if the wafer 1 separates when the voltage is lowered to find the lowest voltage (voltage V
In step 4), the voltages V1, V2, and V3 are applied once again to attract the wafer 1, and the voltage V5 may be set to be slightly higher than the voltage V4 at which the wafer 1 has come off again.
【0035】次に、図10ないし図14を参照して、ウ
エハ1が上方向に凸に変形している場合について説明す
る。図10は、ウエハが上方向に凸に変形している状態
を示す断面図、図11は、ウエハの周辺部のみ吸着され
た状態を示す断面図、図12は、ウエハの一方の周辺部
が吸着された状態を示す断面図、図13は、ウエハが前
面に吸着された状態を示す断面図、図14は、図6の静
電吸着装置への電圧印加方法を説明する線図である。図
10ないし図13では、図6に示したような電源系統の
図示を省略してある。Next, the case where the wafer 1 is deformed to be convex upward will be described with reference to FIGS. 10 to 14. 10 is a sectional view showing a state where the wafer is convexly deformed upward, FIG. 11 is a sectional view showing a state where only the peripheral portion of the wafer is adsorbed, and FIG. 12 is a sectional view showing one peripheral portion of the wafer. FIG. 13 is a cross-sectional view showing a state where the wafer is attracted, FIG. 13 is a cross-sectional view showing a state where the wafer is attracted to the front surface, and FIG. 14 is a diagram illustrating a method of applying a voltage to the electrostatic attraction device of FIG. 10 to 13, the illustration of the power supply system as shown in FIG. 6 is omitted.
【0036】電極板37,38,39に所定の電圧V1
を印加し、吸着力を発生させる。ウエハ1の変形量が大
きく誘電体との隙間が大きいような場合は図11に示す
ようにウエハ1の周辺部だけ吸着面34´,36´に吸
着され、中央部は吸着されない。中央部のウエハ1の変
形を修正するためには、ウエハ1は周辺部に向かって変
形している分、伸びなければならない。しかしこの場
合、ウエハ1は周辺部で吸着され、拘束されるために中
央部電極板38への印加電圧を増加させても、変形の修
正がされずらい。したがって、一旦印加電圧を落とし
(t2)、再びウエハ1の端の方の吸着部のうちいずれ
か一方に電圧を印加する。A predetermined voltage V1 is applied to the electrode plates 37, 38 and 39.
Is applied to generate a suction force. When the amount of deformation of the wafer 1 is large and the gap between the wafer 1 and the dielectric is large, as shown in FIG. 11, only the peripheral portion of the wafer 1 is adsorbed to the adsorption surfaces 34 'and 36', and the central portion is not adsorbed. In order to correct the deformation of the wafer 1 in the central portion, the wafer 1 has to extend by the amount of the deformation toward the peripheral portion. However, in this case, since the wafer 1 is adsorbed and constrained at the peripheral portion, it is difficult to correct the deformation even if the voltage applied to the central electrode plate 38 is increased. Therefore, the applied voltage is once dropped (t2), and the voltage is applied again to either one of the adsorption portions at the end of the wafer 1.
【0037】本実施例では誘電体36の電極板39に電
圧を印加するものとする(図12)。吸着モニターであ
る誘電体,電極の対22,26が吸着を検知するまで電
圧は印加する(V1)。この場合、図示のようにウエハ
の中央部に行くに従って、ウエハ1は吸着面36´,3
5´から離れている。次いで中央部の吸着面の電極板3
8に、吸着モニターである誘電体,電極の対21,25
が吸着を検知するまで電圧を印加する(V2)。すでに
述べたように、隙間が小さい方がウエハ1への吸着力は
大きく作用するから、ウエハ1が吸着面35´,36か
ら離れる部分47から内側に向かって徐々に吸着され
る。In this embodiment, a voltage is applied to the electrode plate 39 of the dielectric 36 (FIG. 12). The voltage is applied until the dielectric and electrode pairs 22 and 26 which are adsorption monitors detect adsorption (V1). In this case, the wafer 1 is attracted to the suction surfaces 36 ', 3 as it goes to the central portion of the wafer as shown in the figure.
It is away from 5 '. Next, the electrode plate 3 on the central attraction surface
8. Adsorption monitor pair of dielectric and electrode 21, 25
The voltage is applied until V detects the adsorption (V2). As already described, the smaller the gap, the greater the attraction force to the wafer 1, so that the wafer 1 is gradually attracted inward from the portion 47 separated from the attraction surfaces 35 'and 36.
【0038】そして最後に、吸着面34´の電極板37
に、吸着モニターである誘電体,電極の対20,24が
吸着を検知するまで電圧を印加する(V3)。このよう
にすることによって、効果的に平坦化を達成させること
が可能となる。また、図7ないし図9の実施例で説明し
たように所定の電圧、あるいは吸着維持のための最低電
圧で使用すれば、ウエハ上の素子保護、省電力になる。Finally, the electrode plate 37 on the adsorption surface 34 '
Then, a voltage is applied until the adsorption monitor detects the adsorption by the pair of dielectric and electrode 20, 24 (V3). By doing so, it becomes possible to effectively achieve the flattening. Further, as described in the embodiment of FIGS. 7 to 9, if the device is used at a predetermined voltage or the lowest voltage for maintaining adsorption, the element protection on the wafer and power saving can be achieved.
【0039】このように、吸着モニターである誘電体,
電極の対20,24、21,25、22,26からの、
吸着されたか否かの信号を受けて、分割した各静電吸着
部の電極37,38,39への印加電圧を制御装置17
によって制御すれば、効果的な静電吸着を行うことがで
き、かつ、ウエハ1へのダメージを最低限に抑え、省電
力にも役立つ。In this way, the dielectric that is the adsorption monitor,
From electrode pairs 20, 24, 21, 25, 22, 26,
In response to the signal indicating whether or not it has been attracted, the controller 17 controls the voltage applied to the electrodes 37, 38, 39 of each of the divided electrostatic attraction units.
If it is controlled by the method, effective electrostatic adsorption can be performed, damage to the wafer 1 can be minimized, and power consumption can be saved.
【0040】なお、本発明は、静電吸着を効果的に行う
方法に関するものである。本実施例では、誘電体、電
極、電源、電流計からなる吸着モニターを使用した例を
挙げたが、特にこの吸着モニター方法に限定さえるもの
ではなく、例えば、変位センサー、静電容量センサーな
どをモニター手段としても同様の効果が得られる。The present invention relates to a method for effectively performing electrostatic adsorption. In the present embodiment, an example using an adsorption monitor including a dielectric, an electrode, a power supply, and an ammeter has been described, but the adsorption monitor method is not particularly limited, and for example, a displacement sensor, a capacitance sensor, or the like may be used. The same effect can be obtained as a monitoring means.
【0041】[0041]
【発明の効果】以上詳細に説明したように、本発明によ
れば、ウエハの反りが矯正され、被保持物が確実に吸着
固定されたことを確認しうる静電吸着装置を提供するこ
とができる。また、本発明によれば、被保持物が確実に
吸着固定されたか否か、また平坦化されたか否かモニタ
ーできる静電吸着装置の電圧印加方法を提供することが
できる。As described above in detail, according to the present invention, it is possible to provide an electrostatic chucking device capable of correcting the warp of a wafer and confirming that the held object is securely sucked and fixed. it can. Further, according to the present invention, it is possible to provide a voltage application method for an electrostatic attraction device capable of monitoring whether or not the held object is securely attracted and fixed, and whether or not the held object is flattened.
【図1】本発明の一実施例に係る静電吸着装置の構成を
示す断面図である。FIG. 1 is a cross-sectional view showing a configuration of an electrostatic attraction device according to an embodiment of the present invention.
【図2】図1の装置におけるウエハの吸着作用を説明す
る要部拡大図である。FIG. 2 is an enlarged view of a main part for explaining a wafer suction action in the apparatus of FIG.
【図3】本発明の他の実施例に係る双極型静電吸着装置
の構成を示す説明図である。FIG. 3 is an explanatory diagram showing a configuration of a bipolar electrostatic attraction device according to another embodiment of the present invention.
【図4】本発明のさらに他の実施例に係る静電吸着装置
の構成を示す断面図である。FIG. 4 is a cross-sectional view showing a configuration of an electrostatic attraction device according to still another embodiment of the present invention.
【図5】本発明のさらに他の実施例に係る双極型静電吸
着装置の構成を示す説明図である。FIG. 5 is an explanatory diagram showing a configuration of a bipolar electrostatic attraction device according to still another embodiment of the present invention.
【図6】本発明のさらに他の実施例に係る静電吸着装置
の全体構成を示す説明図である。FIG. 6 is an explanatory diagram showing an overall configuration of an electrostatic attraction device according to still another embodiment of the present invention.
【図7】ウエハが下方向に凸に変形している状態を示す
断面図である。FIG. 7 is a cross-sectional view showing a state in which the wafer is convexly deformed downward.
【図8】ウエハが吸着された状態を示す断面図である。FIG. 8 is a cross-sectional view showing a state where a wafer is attracted.
【図9】図6の静電吸着装置への電圧印加方法を説明す
る線図である。9 is a diagram illustrating a method of applying a voltage to the electrostatic attraction device of FIG.
【図10】ウエハが上方向に凸に変形している状態を示
す断面図である。FIG. 10 is a cross-sectional view showing a state where the wafer is convexly deformed upward.
【図11】ウエハの周辺部のみ吸着された状態を示す断
面図である。FIG. 11 is a cross-sectional view showing a state where only the peripheral portion of the wafer is sucked.
【図12】ウエハの一方の周辺部が吸着された状態を示
す断面図である。FIG. 12 is a cross-sectional view showing a state where one peripheral portion of the wafer is sucked.
【図13】ウエハが全面に吸着された状態を示す断面図
である。FIG. 13 is a cross-sectional view showing a state where a wafer is adsorbed on the entire surface.
【図14】図6の静電吸着装置への電圧印加方法を説明
する線図である。FIG. 14 is a diagram illustrating a method of applying a voltage to the electrostatic attraction device of FIG.
1 ウエハ2,3,4,19,20,21,22,3
4,35,36 誘電体 5,6,7,23,24,25,26,37,38,3
9 電極板 8,9,10,27,28,29,30,40,41,
42 電源 11,12,13,31,32,33 電流計 16 絶縁材 17 制御装置1 wafers 2, 3, 4, 19, 20, 21, 22, 3
4,35,36 Dielectric 5,6,7,23,24,25,26,37,38,3
9 electrode plates 8, 9, 10, 27, 28, 29, 30, 40, 41,
42 power supply 11, 12, 13, 31, 32, 33 ammeter 16 insulating material 17 controller
Claims (8)
板と被保持物体との間に電位差を生じさせることによっ
て前記誘電体に前記被保持物体を吸着させる静電吸着装
置において、 少なくとも前記電極板を二つ以上に分割し、かつ、分割
された部分を電気的に絶縁される構造として、それぞれ
独立に電位差を発生させる電源と、各回路に流れる電流
を計測する手段とを設けたことを特徴とする静電吸着装
置。1. An electrostatic chucking device for stacking an electrode plate and a dielectric material and causing a potential difference between the electrode plate and the held object to attract the held object to the dielectric material, The electrode plate is divided into two or more parts, and the divided part is electrically insulated, and a power source for independently generating a potential difference and a means for measuring a current flowing in each circuit are provided. An electrostatic chucking device.
板と被保持物体との間に電位差を生じさせることによっ
て前記誘電体に前記被保持物体を吸着させる静電吸着装
置において、 前記電極板および誘電体を、二つ以上に分割し、かつ、
分割された部分を電気的に絶縁される構造として、それ
ぞれ独立に電位差を発生させる電源と、各回路に流れる
電流を計測する手段とを設けたことを特徴とする静電吸
着装置。2. An electrostatic attraction device for stacking an electrode plate and a dielectric material, and causing a potential difference between the electrode plate and the held object to attract the held object to the dielectric material, wherein the electrode Divide the plate and the dielectric into two or more, and
An electrostatic adsorption device characterized in that a power source for independently generating a potential difference and a means for measuring a current flowing through each circuit are provided as a structure in which the divided portions are electrically insulated.
板と被保持物体との間に電位差を生じさせることによっ
て前記誘電体に前記被保持物体を吸着させる静電吸着装
置において、 前記吸着力を発生させる誘電体および電極板内に、これ
とは独立に誘電体および電極板を積み重ね、前記吸着力
を発生させる手段とは独立に、それぞれ電位差を発生さ
せる電源と各回路に流れる電流を計測する手段とを備え
た吸着確認手段を、前記吸着力を発生させる手段の電極
板との間を絶縁して二つ以上設けたことを特徴とする静
電吸着装置。3. An electrostatic adsorption device for stacking an electrode plate and a dielectric material, and causing a potential difference between the electrode plate and the held object to attract the held object to the dielectric material. The dielectric and the electrode plate are stacked independently of each other in the dielectric and the electrode plate for generating force, and the power source for generating the potential difference and the current flowing in each circuit are respectively independent of the means for generating the attraction force. 2. An electrostatic adsorption device, characterized in that two or more adsorption confirmation means provided with a measurement means are provided so as to be insulated from the electrode plate of the means for generating the adsorption force.
板と被保持物体との間に電位差を生じさせることによっ
て前記誘電体に前記被保持物体を吸着させる静電吸着方
法において、 少なくとも前記電極板を、互いの間を絶縁し二つ以上に
分割して、それぞれ独立に電位差を発生させる電源と吸
着確認手段とを有する構成とし、 前記吸着確認手段からの情報によって、分割された静電
吸着部分それぞれへの印加電圧の大きさ、また、それぞ
れの電圧印加の開始時間を、それぞれ独立に変化させる
ことを特徴とする静電吸着装置の吸着方法。4. An electrostatic adsorption method for stacking an electrode plate and a dielectric, and causing a potential difference between the electrode plate and the held object to attract the held object to the dielectric, at least the The electrode plate is configured to have a power source that independently insulates each other and divides into two or more, and that independently generates a potential difference and an adsorption confirmation unit, and electrostatically divided by the information from the adsorption confirmation unit. A method for attracting an electrostatic attraction device, wherein the magnitude of a voltage applied to each attraction portion and the start time of each voltage application are independently changed.
板と被保持物体との間に電位差を生じさせることによっ
て前記誘電体に前記被保持物体を吸着させる静電吸着方
法において、 前記電極板および誘電体を、互いの間を絶縁し二つ以上
に分割して、それぞれ独立に電位差を発生させる電源と
吸着確認手段とを有する構成とし、 前記吸着確認手段からの情報によって、分割された静電
吸着部分それぞれへの印加電圧の大きさ、また、それぞ
れの電圧印加の開始時間を、それぞれ独立に変化させる
ことを特徴とする静電吸着装置の吸着方法。5. An electrostatic adsorption method in which an electrode plate and a dielectric are stacked, and a potential difference is generated between the electrode plate and the held object to attract the held object to the dielectric, wherein the electrode The plate and the dielectric are insulated from each other and divided into two or more parts, each of which has a power source for independently generating a potential difference and an adsorption confirmation means, and is divided by the information from the adsorption confirmation means. A method for attracting an electrostatic attraction device, characterized in that the magnitude of a voltage applied to each electrostatic attraction portion and the start time of each voltage application are independently changed.
形状に変形があると判断したときは、まず、二つ以上に
分割した静電吸着部の中央部の静電吸着部の電極に電圧
を印加し、ついで周辺部の静電吸着部の電極に向かって
順次に、各静電吸着部に設けられた吸着確認手段が、前
記被保持物体の吸着を確認するまで電圧を印加すること
を特徴とする請求項4または5記載のいずれかの静電吸
着装置の吸着方法。6. The attraction confirmation means, when it judges that the held object is deformed in a downward convex shape, first, the electrostatic attraction portion of the central portion of the electrostatic attraction portion divided into two or more is detected. Voltage is applied to the electrodes, and then sequentially toward the electrodes of the electrostatic attraction section in the peripheral portion, the attraction confirmation means provided in each electrostatic attraction section applies voltage until the attraction of the held object is confirmed. The adsorption method for an electrostatic adsorption device according to claim 4, wherein
形状に変形があると判断したときは、まず、二つ以上に
分割した静電吸着部の最周辺部の一静電吸着部の電極
に、吸着確認手段が吸着を確認するまで電圧を印加し、
ついで中央部、さらに最初吸着したのと反対側の最周辺
部の静電吸着部の電極に向かって順次に、各静電吸着部
に設けられた吸着確認手段が、前記被保持物体の吸着を
確認するまで電圧を印加することを特徴とする請求項4
または5記載のいずれかの静電吸着装置の吸着方法。7. The suction confirmation means, when it judges that the held object is deformed into a convex shape, first, one electrostatic suction of the outermost part of the electrostatic suction portion divided into two or more. Voltage is applied to the electrode of the part until the adsorption confirmation means confirms the adsorption,
Then, the attraction confirmation means provided in each electrostatic attraction portion sequentially attracts the held object toward the electrode of the electrostatic attraction portion of the central portion and the outermost peripheral portion on the opposite side from the first attraction. 5. A voltage is applied until confirmation is made.
Alternatively, the electrostatic adsorption device according to any one of 5 above.
着完了後、一旦徐々に電圧を低下させて吸着を解除し、
再び電圧を印加して前記被保持物体を吸着し、その後、
上述の吸着が解除された電圧より若干高い値に電圧を設
定することを特徴とする請求項4ないし7記載のいずれ
かの静電吸着装置の吸着方法。8. In the electrostatic adsorption device, after the adsorption of the held object is completed, the voltage is gradually reduced to release the adsorption,
Apply voltage again to adsorb the held object, then
8. The adsorption method for an electrostatic adsorption device according to claim 4, wherein the voltage is set to a value slightly higher than the released voltage.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP34817592A JPH06204325A (en) | 1992-12-28 | 1992-12-28 | Electrostatic attraction device and its method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP34817592A JPH06204325A (en) | 1992-12-28 | 1992-12-28 | Electrostatic attraction device and its method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH06204325A true JPH06204325A (en) | 1994-07-22 |
Family
ID=18395254
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP34817592A Pending JPH06204325A (en) | 1992-12-28 | 1992-12-28 | Electrostatic attraction device and its method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH06204325A (en) |
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CN112635381B (en) * | 2019-10-08 | 2022-03-22 | 长鑫存储技术有限公司 | Control method, control system and semiconductor manufacturing equipment |
KR20220091281A (en) * | 2020-12-23 | 2022-06-30 | 한국세라믹기술원 | Electrostatic chuck with sensor chip and method for measuring capacitance and chucking force using the same |
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