JP2019106532A - Electrostatic chuck device, mask attaching device, film-forming apparatus, film-forming method, and method for manufacturing electronic device - Google Patents

Electrostatic chuck device, mask attaching device, film-forming apparatus, film-forming method, and method for manufacturing electronic device Download PDF

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JP2019106532A
JP2019106532A JP2018200353A JP2018200353A JP2019106532A JP 2019106532 A JP2019106532 A JP 2019106532A JP 2018200353 A JP2018200353 A JP 2018200353A JP 2018200353 A JP2018200353 A JP 2018200353A JP 2019106532 A JP2019106532 A JP 2019106532A
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substrate
electrostatic chuck
magnetic force
mask
chuck plate
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JP6686100B2 (en
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石井 博
Hiroshi Ishii
石井  博
一史 柏倉
Kazufumi Kashiwakura
一史 柏倉
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Canon Tokki Corp
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Canon Tokki Corp
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23QDETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/15Devices for holding work using magnetic or electric force acting directly on the work
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833Details of electrostatic chucks
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02NELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electroluminescent Light Sources (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

To provide: an electrostatic chuck device having a structure where power can be supplied to an electrostatic chuck while an effect on uniformity of magnetic force applied by magnetic force applying means is reduced, in a film-forming device having a structure where a substrate is held using the electrostatic chuck and the substrate is brought into close contact with a mask using the magnetic force applying means; a mask attaching device; a film-forming device including them; a film-forming method using them; and a method for manufacturing an electronic device.SOLUTION: An electrostatic chuck device includes: an electrostatic chuck plate part including a first surface facing magnetic force applying means for attaching a mask onto a film forming surface of a substrate by a magnetic force from a magnetic force generating part, and a second surface opposite to the first surface and holding a surface opposite to the film forming surface of the substrate; and a power supply terminal part for supplying power to the electrostatic chuck plate part. The power supply terminal part is installed outside a region where the magnetic force generating part of the magnetic force applying means is disposed.SELECTED DRAWING: Figure 3

Description

本発明は、成膜装置及び成膜方法に関するもので、具体的には、成膜装置において、基板を静電引力によって保持する静電チャックプレート部に電圧を供給するための給電端子部の構造に関するものである。   The present invention relates to a film forming apparatus and a film forming method, and more specifically, in the film forming apparatus, a structure of a feed terminal unit for supplying a voltage to an electrostatic chuck plate unit that holds a substrate by electrostatic attraction. It is about

最近、フラットパネル表示装置として有機EL表示装置が脚光を浴びている。有機EL表示装置は自発光ディスプレイであり、応答速度、視野角、薄型化などの特性が液晶パネルディスプレイより優れており、モニタ、テレビ、スマートフォンに代表される各種携帯端末などで既存の液晶パネルディスプレイを早いスピードで代替している。また、自動車用ディスプレイ等にも、その応用分野を広げている。   Recently, an organic EL display device has been in the limelight as a flat panel display device. The organic EL display device is a self-luminous display, and its characteristics such as response speed, viewing angle and thinning are superior to those of liquid crystal panel displays, and existing liquid crystal panel displays such as monitors, televisions and various portable terminals represented by smartphones. Substitute at a high speed. In addition, the field of application is being expanded to displays for automobiles and the like.

有機EL表示装置の素子は、2つの向かい合う電極(カソード電極、アノード電極)の間に発光を起こす有機物層が形成された基本構造を持つ。有機ELディスプレイ素子の有機物層と電極金属層は真空チャンバ内で、画素パターンが形成されたマスクを介して基板に蒸着物質を蒸着させることで製造される。   The element of the organic EL display device has a basic structure in which an organic substance layer which emits light is formed between two facing electrodes (a cathode electrode and an anode electrode). The organic layer and the electrode metal layer of the organic EL display device are manufactured by depositing a deposition material on a substrate through a mask on which a pixel pattern is formed in a vacuum chamber.

このような成膜プロセスにおいて、マスク上の画素パターンを高精度で基板に転写するためには、基板への蒸着が行われる前にマスクと基板の相対的位置を精密に調整し、マスクを基板の成膜面に密着させなければならない。   In such a deposition process, in order to transfer the pixel pattern on the mask to the substrate with high precision, the relative position between the mask and the substrate is precisely adjusted before deposition on the substrate, and the mask is used as a substrate It must be in close contact with the film formation surface of

マスクを基板の成膜面に密着させるために、マグネット板を用いて基板の上部から基板の下部の金属製のマスクに磁力を印加している。すなわち、従来技術においては、相対的位置が調整(アライメント)された基板をマスクの上面に載置した状態で、マグネット板を基板の上面に当接させることで、マグネット板のマグネットによって金属製のマスクに印加される磁力を通じて基板とマスクとを密着させる。   In order to bring the mask into close contact with the film formation surface of the substrate, a magnetic plate is used to apply a magnetic force from the upper portion of the substrate to the metal mask on the lower portion of the substrate. That is, in the prior art, the metal plate is made of metal by the magnet of the magnet plate by bringing the magnet plate into contact with the upper surface of the substrate with the substrate whose relative position is adjusted (aligned) placed on the upper surface of the mask. The substrate and the mask are brought into close contact through the magnetic force applied to the mask.

最近、基板の自重による撓みを防止するため、基板の上面を静電チャックの静電引力によって保持する方法が検討されている。静電チャックは、基板の上面を、静電引力によって吸着させるので、基板の上面の鉛直方向における上方に設置される。   Recently, in order to prevent bending of the substrate due to its own weight, a method of holding the upper surface of the substrate by electrostatic attraction of an electrostatic chuck has been considered. The electrostatic chuck is disposed above the upper surface of the substrate in the vertical direction because the upper surface of the substrate is attracted by electrostatic attraction.

したがって、静電チャックを用いて基板を保持し、このような基板とマスクをマグネット板により密着させる構造の成膜装置においては、静電チャックがマグネット板の下方で基板を保持することになる。従来技術ではマグネット板の下部に配置される静電チャックに電源を供給するため、成膜装置の外部からの給電線がマグネット板を貫通して、マグネット板の下部に配置される静電チャックに到達するように設置した。   Therefore, in a film forming apparatus having a structure in which a substrate is held using an electrostatic chuck and such a substrate and a mask are in close contact with a magnet plate, the electrostatic chuck holds the substrate below the magnet plate. In the prior art, in order to supply power to the electrostatic chuck disposed in the lower part of the magnet plate, the feed line from the outside of the film forming apparatus penetrates the magnet plate and the electrostatic chuck disposed in the lower part of the magnet plate Installed to reach.

つまり、図7に示すように、マグネット板724のマグネット725が配置されている領域内に、マグネット725以外に静電チャック723に電源を供給するための給電端子731が設置される。これにより、マグネット板724のマグネット725が配置される領域内には、給電端子731が一緒に配置されて、マグネット725が配置されない局所領域が存在することになる。   That is, as shown in FIG. 7, in the region of the magnet plate 724 where the magnets 725 are disposed, the power supply terminals 731 for supplying power to the electrostatic chuck 723 besides the magnets 725 are installed. As a result, in the region of the magnet plate 724 where the magnets 725 are arranged, there is a local region where the feed terminals 731 are arranged together and the magnets 725 are not arranged.

その結果、マグネット725が配置されない局所領域の周りでは、磁力が弱まり、マグ
ネット板724のマグネット725が配置された領域全体において、マスクへの磁力が不均一になり、基板とマスクの密着性が低下して、成膜精度も低下する。
As a result, around the local region where the magnet 725 is not disposed, the magnetic force weakens, the magnetic force to the mask becomes nonuniform over the entire region where the magnet 725 of the magnet plate 724 is disposed, and the adhesion between the substrate and the mask decreases. As a result, the film forming accuracy also decreases.

本発明は、静電チャックを用いて基板を保持し、磁力印加手段を用いて基板とマスクを密着させる構造の成膜装置において、磁力印加手段による磁力の均一度への影響を低減しながらも静電チャックへの電源供給が可能な構造を有する静電チャック装置、マスク取付装置、これらを含む成膜装置、これらを用いる成膜方法及び電子デバイスの製造方法を提供することを主な目的とする。   According to the present invention, in a film forming apparatus having a structure in which the substrate is held using an electrostatic chuck and the substrate and the mask are closely adhered using a magnetic force application unit, the influence of the magnetic force application unit on the uniformity of the magnetic force is reduced. An electrostatic chuck apparatus having a structure capable of supplying power to an electrostatic chuck, a mask mounting apparatus, a film forming apparatus including these, a film forming method using these, and a method of manufacturing an electronic device Do.

本発明の第1態様による静電チャック装置は、磁力発生部からの磁力によってマスクを基板の成膜面上に付着させるための磁力印加手段に向かって面している第1面と、前記第1面の反対側の面であって、前記基板の成膜面の反対側の面を保持するための第2面とを含む静電チャックプレート部と、前記静電チャックプレート部に電源を供給するための給電端子部とを含み、前記給電端子部は、前記磁力印加手段の前記磁力発生部が配置される領域の外側に設けられる。   In the electrostatic chuck device according to the first aspect of the present invention, a first surface facing a magnetic force application means for causing a mask to adhere to a film formation surface of a substrate by a magnetic force from a magnetic force generation unit; An electrostatic chuck plate portion including a second surface opposite to the first surface for holding the surface opposite to the film formation surface of the substrate, and power is supplied to the electrostatic chuck plate portion And a feed terminal portion to be provided, wherein the feed terminal portion is provided outside a region where the magnetic force generating portion of the magnetic force application means is disposed.

本発明の第2態様によるマスク取付装置は、基板の成膜面の反対側の面を保持するための静電チャックプレート部と、前記静電チャックプレート部に電源を供給するための給電端子部と、磁力発生部を有し、前記磁力発生部からの磁力によってマスクを前記基板の成膜面に付着させるための磁力印加手段とを含み、前記静電チャックプレート部は、前記磁力印加手段に向かって面している第1面と、前記第1面の反対側の面であって、前記基板の成膜面の反対側の面を保持するための第2面とを含み、前記給電端子部は、前記磁力印加手段の前記磁力発生部が配置される領域の外側に設けられる。   A mask mounting apparatus according to a second aspect of the present invention includes an electrostatic chuck plate portion for holding a surface opposite to a film formation surface of a substrate, and a power supply terminal portion for supplying power to the electrostatic chuck plate portion. And a magnetic force application unit for attaching a mask to the film formation surface of the substrate by the magnetic force from the magnetic force generation unit, and the electrostatic chuck plate unit includes the magnetic force application unit. The feed terminal includes a first surface facing the second surface and a second surface opposite to the first surface for holding the surface opposite to the film formation surface of the substrate. The part is provided outside the area where the magnetic force generation part of the magnetic force application means is disposed.

本発明の第3態様による成膜装置は、本発明の第2態様によるマスク取付装置を含む。
本発明の第4態様による成膜装置は、マスクに磁力を印加するための磁力印加手段と、前記磁力印加手段の下方に設置され、基板を保持するための静電チャックプレート部と、前記静電チャックプレート部に電源を供給するための給電線部とを含み、前記磁力印加手段は、磁力を発生させるための複数の磁力発生部を含み、前記給電線部は、前記磁力印加手段の前記複数の磁力発生部が配置される領域を貫通しない。
The film deposition apparatus according to the third aspect of the present invention includes the mask attachment apparatus according to the second aspect of the present invention.
A film forming apparatus according to a fourth aspect of the present invention comprises: a magnetic force applying unit for applying a magnetic force to a mask; an electrostatic chuck plate unit disposed below the magnetic force applying unit; and holding the substrate; And a feed line portion for supplying power to the electric chuck plate portion, wherein the magnetic force application means includes a plurality of magnetic force generation portions for generating a magnetic force, and the feed line portion is a portion of the magnetic force application means. It does not penetrate the area in which the plurality of magnetic force generation units are disposed.

本発明の第5態様による成膜方法は、成膜装置内にマスクを搬入して、マスク台上に載置する段階と、前記成膜装置内に基板を搬入して、基板支持台上に載置する段階と、前記基板支持台上の前記基板を本発明の第1態様による静電チャック装置によって保持する段階と、前記静電チャック装置に保持された前記基板を前記マスク上に載置する段階と、磁力発生部を含む磁力印加手段によって前記マスクと前記マスク上の前記基板を密着させる段階と、蒸着源から蒸発した蒸着材料を、前記マスクを介して前記基板上に成膜させる段階とを含む。   The film forming method according to the fifth aspect of the present invention comprises the steps of: carrying a mask into the film forming apparatus and placing the mask on the mask table; carrying the substrate into the film forming apparatus; Placing the substrate on the substrate support table by the electrostatic chuck device according to the first aspect of the present invention; placing the substrate held by the electrostatic chuck device on the mask Attaching the mask and the substrate on the mask by means of magnetic force application means including a magnetic force generating part, and depositing the vapor deposition material evaporated from the evaporation source on the substrate through the mask And.

本発明の第6態様による電子デバイスの製造方法は、本発明の第5態様による成膜方法を用いて電子デバイスを製造する。   A method of manufacturing an electronic device according to a sixth aspect of the present invention manufactures an electronic device using the film forming method according to the fifth aspect of the present invention.

本発明によると、磁力印加手段の磁力発生部が配置された領域の外側に静電チャック装置の給電端子部を設けることで、静電チャックプレート部に電源を供給するための給電線又は給電端子部が磁力印加手段の磁力発生部の配置領域を貫通せず、磁力印加手段の磁力発生部の配置領域を避けることができる。これによって、磁力印加手段の磁力発生部が配置された領域内に、給電線又は給電端子部の貫通によって磁力発生部が局所的に配置されていない部分が生じないため、磁力印加手段の磁力が不均一になることを防止することが
できる。その結果、磁力印加手段がマスクを引き寄せる磁場が均一になってマスクと基板間の密着精度が向上する。
According to the present invention, the feed line or the feed terminal for supplying power to the electrostatic chuck plate by providing the feed terminal of the electrostatic chuck device outside the region where the magnetic force generator of the magnetic force application means is disposed. The part does not penetrate the arrangement area of the magnetic force generation part of the magnetic force application means, and the arrangement area of the magnetic force generation part of the magnetic force application means can be avoided. As a result, there is no part where the magnetic force generation part is not locally arranged due to the penetration of the feed line or the feed terminal part in the area where the magnetic force generation part of the magnetic force application means is arranged. Unevenness can be prevented. As a result, the magnetic field that attracts the mask by the magnetic force application unit becomes uniform, and the contact accuracy between the mask and the substrate is improved.

図1は、有機EL表示装置の製造ラインの一部の模式図である。FIG. 1 is a schematic view of a part of a manufacturing line of an organic EL display device. 図2は、本実施例による成膜装置の模式図である。FIG. 2 is a schematic view of a film forming apparatus according to the present embodiment. 図3は、本実施例による静電チャック装置を含むマスク取付装置を示す模式図である。FIG. 3 is a schematic view showing a mask mounting apparatus including the electrostatic chuck apparatus according to the present embodiment. 図4は、本発明の他の実施例による静電チャック装置を含むマスク取付装置を示す模式図である。FIG. 4 is a schematic view showing a mask mounting apparatus including an electrostatic chuck apparatus according to another embodiment of the present invention. 図5は、本実施例の静電チャック装置の平面構造及び基板支持台の支持部の配置を示す模式図である。FIG. 5 is a schematic view showing the planar structure of the electrostatic chuck device of the present embodiment and the arrangement of the support portion of the substrate support. 図6は、本実施例による成膜方法を用いて製造される電子デバイスの一例を示す概略図である。FIG. 6 is a schematic view showing an example of an electronic device manufactured using the film forming method according to the present embodiment. 図7は、従来技術の静電チャック及びマグネット板の構造を示す模式図である。FIG. 7 is a schematic view showing the structure of a conventional electrostatic chuck and a magnet plate.

以下、図面を参照しつつ本発明の好適な実施例を説明する。ただし、以下の実施例は本発明の好ましい構成を例示的に示すものにすぎず、本発明の範囲はそれらの構成に限定されない。また、以下の説明における、装置のハードウェア構成及びソフトウェア構成、処理フロー、製造条件、寸法、材質、形状などは、特に特定的な記載がないかぎりは、本発明の範囲をそれらのみに限定する趣旨のものではない。   Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings. However, the following examples merely illustrate preferred configurations of the present invention, and the scope of the present invention is not limited to those configurations. In the following description, the hardware configuration and software configuration of the device, the process flow, the manufacturing conditions, the dimensions, the materials, the shape, etc. limit the scope of the present invention to only those unless otherwise specified. It is not for the purpose.

本発明は、基板の表面に真空蒸着によって所望のパターンの薄膜(材料層)を形成する装置に好ましく適用することができる。基板の材料としては、硝子、高分子材料のフィルム、金属などの任意の材料を選択することができ、また、蒸着材料としても有機材料、金属性材料(金属、金属酸化物など)などの任意の材料を選択することができる。本発明の技術は、具体的には、有機電子デバイス(例えば、有機EL表示装置、薄膜太陽電池)、光学部材などの製造装置に適用可能である。その中でも、有機EL表示装置の製造装置は、基板の大型化又は、表示パネルの高精密化などによって、基板とマスクのアライメント精度及び密着精度のさらなる向上が求められているので、本発明の好ましい適用例の一つである。   The present invention can be preferably applied to an apparatus for forming a thin film (material layer) of a desired pattern on a surface of a substrate by vacuum deposition. As a material of the substrate, any material such as glass, film of polymer material, metal and the like can be selected, and as a vapor deposition material, any material such as organic material and metallic material (metal, metal oxide, etc.) The material of the can be selected. Specifically, the technology of the present invention is applicable to manufacturing apparatuses such as organic electronic devices (for example, organic EL display devices, thin film solar cells), optical members and the like. Among them, the manufacturing apparatus of the organic EL display device is desired to further improve the alignment accuracy and the adhesion accuracy of the substrate and the mask by increasing the size of the substrate or increasing the precision of the display panel. It is one of the application examples.

<電子デバイス製造ライン>
図1は、電子デバイスの製造ラインの構成の一部を模式的に示す上視図である。図1の製造ラインは、例えば、スマートフォン用の有機EL表示装置の表示パネルの製造に用いられる。スマートフォン用の表示パネルの場合、例えば、約1800mm×約1500mmのサイズの基板に有機ELの成膜を行った後、該基板をダイシングして複数の小さなサイズのパネルが作製される。
<Electronic Device Production Line>
FIG. 1 is a top view schematically showing a part of a configuration of a manufacturing line of an electronic device. The manufacturing line of FIG. 1 is used, for example, for manufacturing a display panel of an organic EL display device for a smartphone. In the case of a display panel for a smartphone, for example, after forming an organic EL film on a substrate having a size of about 1800 mm × about 1500 mm, the substrate is diced to produce a plurality of small size panels.

電子デバイスの製造ラインは、一般に、図1に示すように、複数の成膜室11、12と、搬送室13とを有する。搬送室13内には、基板10を保持し搬送する搬送ロボット14が設けられている。搬送ロボット14は、例えば、多関節アームに、基板10を保持するロボットハンドが取り付けられた構造を持つロボットであり、各成膜室への基板10の搬入や搬出を行う。   Generally, as shown in FIG. 1, a production line of an electronic device has a plurality of film forming chambers 11 and 12 and a transfer chamber 13. In the transfer chamber 13, a transfer robot 14 for holding and transferring the substrate 10 is provided. The transfer robot 14 is, for example, a robot having a structure in which a robot hand holding the substrate 10 is attached to an articulated arm, and carries the substrate 10 into and out of each film forming chamber.

各成膜室11、12にはそれぞれ成膜装置(蒸着装置とも呼ぶ)が設けられている。搬送ロボット14との基板10の受け渡し、基板10とマスクの相対位置の調整(アライメント)、マスク上への基板10の固定、成膜(蒸着)などの一連の成膜プロセスは、成膜
装置によって自動で行われる。
A film forming apparatus (also referred to as a vapor deposition apparatus) is provided in each of the film forming chambers 11 and 12. A series of film forming processes such as delivery of the substrate 10 with the transport robot 14, adjustment (alignment) of the relative position between the substrate 10 and the mask, fixing of the substrate 10 on the mask, film formation (deposition) It is done automatically.

以下、成膜室の成膜装置の構成について説明する。   Hereinafter, the configuration of the film forming apparatus in the film forming chamber will be described.

<成膜装置>
図2は成膜装置2の構成を概略的に示す断面図である。以下の説明においては、鉛直方向をZ方向とするXYZ直交座標系を使う。成膜時に、基板10が水平面(XY平面)と平行に固定されることを仮定し、基板10の短辺に平行な方向をX方向、長辺に平行な方向をY方向とする。また、Z軸周りの回転角をθで表示する。
<Deposition apparatus>
FIG. 2 is a cross-sectional view schematically showing the configuration of the film forming apparatus 2. In the following description, an XYZ orthogonal coordinate system in which the vertical direction is the Z direction is used. Assuming that the substrate 10 is fixed parallel to the horizontal plane (XY plane) at the time of film formation, a direction parallel to the short side of the substrate 10 is taken as an X direction, and a direction parallel to the long side is taken as a Y direction. Also, the rotation angle around the Z axis is indicated by θ.

成膜装置2は、成膜工程が行われる空間を定義する真空チャンバ20を具備する。真空チャンバ20の内部は真空雰囲気、或いは、窒素ガスなどの不活性ガス雰囲気で維持される。   The film forming apparatus 2 includes a vacuum chamber 20 that defines a space in which a film forming process is performed. The inside of the vacuum chamber 20 is maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen gas.

成膜装置2の真空チャンバ20内の上部には基板を支持する基板支持台21、マスクが置かれるマスク台22、基板を静電引力によって保持する静電チャック装置23、金属製のマスクに磁力を印加するための磁力印加手段24などが設けられ、成膜装置の真空チャンバ20内の下部には蒸着材料が収納される蒸着源25などが設けられる。   A substrate support base 21 for supporting a substrate, a mask base 22 for placing a mask, an electrostatic chuck device 23 for holding a substrate by electrostatic attraction, magnetic force on a metal mask in the upper part in a vacuum chamber 20 of the film forming apparatus 2 A magnetic force application means 24 or the like for applying a voltage is provided, and a vapor deposition source 25 or the like in which a vapor deposition material is accommodated is provided at a lower portion in a vacuum chamber 20 of the film forming apparatus.

基板支持台21は、搬送室13の搬送ロボット14によって真空チャンバ20内に搬入された基板10が載置される。基板支持台21は、真空チャンバ20に固定されるように設けられてもよく、鉛直方向に昇降可能に設けられてもよい。基板支持台21は、基板の下面の周縁部を支持する支持部211、212を含む。   In the substrate support 21, the substrate 10 carried into the vacuum chamber 20 by the transfer robot 14 of the transfer chamber 13 is placed. The substrate support 21 may be provided so as to be fixed to the vacuum chamber 20, and may be provided so as to be vertically movable. The substrate support 21 includes supports 211 and 212 for supporting the peripheral portion of the lower surface of the substrate.

基板支持台21の下には、フレーム状のマスク台22が設置され、マスク台22には、基板10上に形成される薄膜パターンに対応する開口パターンを有するマスク221が設置される。特に、スマートフォン用の有機EL素子を製造するのに使われるマスクは微細な開口パターンが形成された金属製のマスクであり、FMM(Fine Metal Mask)とも呼ぶ。   Under the substrate support 21, a frame-like mask table 22 is provided, and a mask 221 having an opening pattern corresponding to a thin film pattern formed on the substrate 10 is provided on the mask table 22. In particular, a mask used to manufacture an organic EL element for a smartphone is a metal mask on which a minute opening pattern is formed, and is also called FMM (Fine Metal Mask).

基板支持台21の支持部211、212の上方には、基板10を静電引力によって保持し固定させるための静電チャック装置23が設けられる。静電チャック装置23は、例えば、誘電体(例えば、セラミック材質)マトリックス内に金属電極などの電気回路が埋設された構造を有する。金属電極にプラス(+)及びマイナス(−)の電圧が印加されると、誘電体マトリックスを通じて基板10に金属電極と反対極性の分極電荷が誘導され、基板10と静電チャック装置23との間の静電気的引力によって基板10が静電チャック装置23に保持及び固定される。静電チャック装置23は一つのプレートで形成することもでき、複数のサブプレートを持つように形成してもよい。また、一つのプレートで形成する場合にも、その内部に電気回路を複数含むことで、一つのプレート内における電気回路の位置によって静電引力が異なるように制御することができる。   An electrostatic chuck device 23 for holding and fixing the substrate 10 by electrostatic attraction is provided above the support portions 211 and 212 of the substrate support 21. The electrostatic chuck device 23 has, for example, a structure in which an electric circuit such as a metal electrode is embedded in a dielectric (for example, ceramic material) matrix. When positive (+) and negative (-) voltages are applied to the metal electrode, polarization charges of the opposite polarity to the metal electrode are induced in the substrate 10 through the dielectric matrix, and between the substrate 10 and the electrostatic chuck device 23 The substrate 10 is held and fixed to the electrostatic chuck device 23 by the electrostatic attraction of the The electrostatic chuck device 23 may be formed of one plate or may be formed to have a plurality of subplates. Further, even in the case of forming by one plate, by including a plurality of electric circuits inside thereof, it is possible to control so that the electrostatic attractive force is different depending on the position of the electric circuit in one plate.

静電チャック装置23の上部には、金属製のマスク221に磁力を印加してマスクの撓みを防止し、マスク221と基板10を密着させるための磁力印加手段24が設けられる。磁力印加手段24は、永久磁石または電磁石などの複数の磁力発生部241を含む。   A magnetic force application unit 24 is provided on the upper portion of the electrostatic chuck device 23 to apply a magnetic force to the metal mask 221 to prevent the mask from bending and to bring the mask 221 and the substrate 10 into close contact with each other. The magnetic force application means 24 includes a plurality of magnetic force generation units 241 such as permanent magnets or electromagnets.

本実施例において、静電チャック装置23は、図3や後述するように、静電チャックプレート部31に電源を供給するための給電線が連結される給電端子部32が、磁力印加手段24の磁力発生部241の配置領域の外側に設置される。これによって、静電チャック装置23の給電線又は給電端子部32が磁力印加手段24の磁力発生部241の配置領域を貫通しないようになる。   In this embodiment, the electrostatic chuck device 23 has a feed terminal portion 32 connected to a feed line for supplying power to the electrostatic chuck plate portion 31 as shown in FIG. It is installed outside the arrangement area of the magnetic force generation unit 241. As a result, the feed line or the feed terminal portion 32 of the electrostatic chuck device 23 does not penetrate through the region where the magnetic force generating portion 241 of the magnetic force application means 24 is disposed.

図2には図示しなかったが、静電チャック装置23と磁力印加手段24との間には、基板10を冷却するための冷却板が設けられていてもよい。冷却板は、静電チャック装置23又は、磁力印加手段24と一体に形成されてもよい。   Although not shown in FIG. 2, a cooling plate for cooling the substrate 10 may be provided between the electrostatic chuck device 23 and the magnetic force application means 24. The cooling plate may be integrally formed with the electrostatic chuck device 23 or the magnetic force applying means 24.

蒸着源25は、基板10に成膜される蒸着材料が収納されるるつぼ(不図示)、るつぼを加熱するためのヒータ(不図示)、蒸着源からの蒸発レートが一定になるまで蒸着材料が基板に飛散することを阻むシャッタ(不図示)などを含む。蒸着源25は、点(point)蒸着源、線形(linear)蒸着源、リボルバ蒸着源などの用途によって多様な構成を持つことができる。   The deposition source 25 is a crucible (not shown) in which the deposition material to be deposited on the substrate 10 is stored, a heater (not shown) for heating the crucible, the deposition material until the evaporation rate from the deposition source becomes constant. It includes a shutter (not shown) or the like that prevents the substrate from being scattered. The deposition source 25 may have various configurations depending on applications such as a point deposition source, a linear deposition source, and a revolver deposition source.

図2に図示しなかったが、成膜装置2は、基板に蒸着された膜の厚さを測定するための膜厚モニタ(不図示)及び膜厚算出ユニット(不図示)を含む。   Although not shown in FIG. 2, the film forming apparatus 2 includes a film thickness monitor (not shown) and a film thickness calculation unit (not shown) for measuring the thickness of the film deposited on the substrate.

成膜装置2の真空チャンバ20の外部上面には、基板支持台21、静電チャック装置23、磁力印加手段24などを鉛直方向(Z方向)に移動させるための駆動機構、及び基板10とマスク221のアライメントのために水平面に平行に(X方向、Y方向、θ方向に)静電チャック装置23などを移動させるための駆動機構などが設けられる。また、マスク221と基板10のアライメントのために、真空チャンバ20の天井に設けられた窓を通じて基板10及びマスク221に形成されたアライメントマークを撮影するアライメント用カメラ(不図示)も設けられる。   A driving mechanism for moving the substrate support 21, the electrostatic chuck device 23, the magnetic force application means 24 and the like in the vertical direction (Z direction) on the outer upper surface of the vacuum chamber 20 of the film forming apparatus 2, and the substrate 10 and the mask A drive mechanism or the like for moving the electrostatic chuck device 23 or the like in parallel with the horizontal plane (in the X direction, the Y direction, and the θ direction) for alignment of the H.221 is provided. In addition, for alignment of the mask 221 and the substrate 10, an alignment camera (not shown) is also provided which captures an alignment mark formed on the substrate 10 and the mask 221 through a window provided on the ceiling of the vacuum chamber 20.

成膜装置2は制御部26を具備する。制御部26は基板10の搬送及びアライメント、蒸着源25の制御、成膜の制御などの機能を有する。制御部26は、例えば、プロセッサ、メモリ、ストレージ、I/Oなどを持つコンピューターによって構成可能である。この場合、制御部26の機能はメモリまたはストレージに格納されたプログラムをプロセッサが実行することにより実現される。コンピューターとしては汎用のパーソナルコンピュータを使用してもよいし、組込み型のコンピューターまたはPLC(programmable logic controller)を使用してもよい。または、制御部26の機能の一部または全部をASICやFPGAのような回路で構成してもよい。また、成膜装置ごとに制御部26が設置されていてもよいし、一つの制御部26が複数の成膜装置を制御するものとしてもよい。   The film forming apparatus 2 includes a control unit 26. The control unit 26 has functions such as transport and alignment of the substrate 10, control of the vapor deposition source 25, and control of film formation. The control unit 26 can be configured by, for example, a computer having a processor, a memory, a storage, an I / O, and the like. In this case, the function of the control unit 26 is realized by the processor executing a program stored in the memory or the storage. As a computer, a general-purpose personal computer may be used, or an embedded computer or programmable logic controller (PLC) may be used. Alternatively, some or all of the functions of the control unit 26 may be configured by a circuit such as an ASIC or an FPGA. Moreover, the control part 26 may be installed for every film-forming apparatus, and one control part 26 is good also as what controls several film-forming apparatuses.

以下、本実施例の成膜装置で行われる成膜プロセスを説明する。   Hereinafter, the film forming process performed by the film forming apparatus of this embodiment will be described.

まず、成膜装置の真空チャンバ20内に新しいマスクが搬入され、マスク台22の上に載置される。   First, a new mask is carried into the vacuum chamber 20 of the film forming apparatus and placed on the mask table 22.

搬送室13の搬送ロボット14によって、基板が真空チャンバ20内に搬入されて基板支持台21に設置される。続いて、静電チャック装置23が下降し、基板10を静電引力によって保持する。   The substrate is carried into the vacuum chamber 20 by the transfer robot 14 of the transfer chamber 13 and placed on the substrate support 21. Subsequently, the electrostatic chuck device 23 is lowered to hold the substrate 10 by electrostatic attraction.

静電チャック装置23に保持された基板10とマスク台に置かれたマスク221との水平(XYθ)方向においての相対的位置の測定及び調整を行う基板アライメント工程が行われる。   A substrate alignment process is performed to measure and adjust the relative positions of the substrate 10 held by the electrostatic chuck device 23 and the mask 221 placed on the mask table in the horizontal (XYθ) direction.

基板アライメント工程が完了すれば、静電チャック装置23及び基板支持台21の少なくとも一方が駆動機構によって下降し、基板10をマスク221上に設置し、その後、磁力印加手段24が駆動機構によって下降し、基板10とマスク221とを密着させる。   When the substrate alignment process is completed, at least one of the electrostatic chuck device 23 and the substrate support 21 is lowered by the drive mechanism, the substrate 10 is placed on the mask 221, and then the magnetic force application means 24 is lowered by the drive mechanism. , And the substrate 10 and the mask 221 are in close contact with each other.

この状態で、蒸着源25のシャッタが開かれて、蒸着源25のるつぼから蒸発された蒸着材料がマスク221の微細パターン開口を通して基板10に蒸着される。   In this state, the shutter of the deposition source 25 is opened, and the deposition material evaporated from the crucible of the deposition source 25 is deposited on the substrate 10 through the fine pattern opening of the mask 221.

基板10に蒸着された蒸着材料の膜厚が所定の厚さに到逹すれば、蒸着源25のシャッタが閉じ、その後、搬送ロボット14が基板10を真空チャンバ20から搬送室13に搬出する。所定の枚数の基板に対して、基板搬入から基板搬出までの工程を繰り返し行った後、蒸着材料が堆積されて使用済みのマスクを成膜装置から搬出し、新しいマスクを成膜装置に搬入する。   When the film thickness of the deposition material deposited on the substrate 10 reaches a predetermined thickness, the shutter of the deposition source 25 is closed, and then the transfer robot 14 unloads the substrate 10 from the vacuum chamber 20 to the transfer chamber 13. After repeating the steps from substrate loading to substrate unloading for a predetermined number of substrates, the deposition material is deposited, the used mask is unloaded from the film forming apparatus, and a new mask is loaded into the film forming apparatus. .

<マスク取付装置>
以下、図3及び図4を参照して、本実施例による静電チャック装置を含むマスク取付装置について説明する。
<Mask mounting device>
Hereinafter, with reference to FIG.3 and FIG.4, the mask attachment apparatus containing the electrostatic chuck apparatus by a present Example is demonstrated.

本実施例のマスク取付装置30は、マスク221を基板10の成膜面上に取付けるための装置であって、基板10の成膜面の反対側の面を保持するための静電チャック装置23と基板10の成膜面側のマスクを磁力によって基板の成膜面に付着させるための磁力印加手段24とを含む。   The mask mounting apparatus 30 of the present embodiment is an apparatus for mounting the mask 221 on the film formation surface of the substrate 10, and is an electrostatic chuck apparatus 23 for holding the surface opposite to the film formation surface of the substrate 10. And a magnetic force application means 24 for adhering the mask on the film formation surface side of the substrate 10 to the film formation surface of the substrate by magnetic force.

本実施例の静電チャック装置23は、基板10の成膜面の反対側の面を静電引力によって保持するための静電チャックプレート部31と、静電チャックプレート部31に電源を供給するための給電線が連結される給電端子部32とを含む。   The electrostatic chuck device 23 of this embodiment supplies power to the electrostatic chuck plate portion 31 for holding the surface on the opposite side of the film formation surface of the substrate 10 by electrostatic attraction and the electrostatic chuck plate portion 31. And a feed terminal portion 32 connected to the feed line.

静電チャックプレート部31は、静電引力を発生させるため、プラスおよびマイナスの電圧が印加される複数の電極311を含む。   The electrostatic chuck plate portion 31 includes a plurality of electrodes 311 to which positive and negative voltages are applied to generate electrostatic attraction.

静電チャックプレート部31は、その上面(第1面)が磁力印加手段24に向くように設置され、上面の反対側にある静電チャックプレート部31の下面(第2面)には基板10が保持される。   The electrostatic chuck plate portion 31 is disposed such that the upper surface (first surface) faces the magnetic force application means 24, and the substrate 10 is provided on the lower surface (second surface) of the electrostatic chuck plate portion 31 opposite to the upper surface. Is held.

静電チャック装置23の給電端子部32は、図3に示すように、磁力印加手段24の磁力発生部241が配置される領域の外側で、静電チャックプレート部31の上面(第1面)に連結されるように設置される(実施例1)。   The feed terminal portion 32 of the electrostatic chuck device 23 is, as shown in FIG. 3, the upper surface (first surface) of the electrostatic chuck plate portion 31 outside the region where the magnetic force generating portion 241 of the magnetic force application means 24 is disposed. Installed so as to be connected to each other (Example 1).

このように、静電チャック装置23の給電端子部32を磁力印加手段24の磁力発生部241が配置される領域の外側に設置することで、静電チャック装置23の給電端子部32またはこれに電源を供給するための給電線が、磁力発生部241が配置される領域を貫通しないようになる。これによって、磁力印加手段24内に磁力発生部241が抜けた領域がなく、複数の磁力発生部241が連続的に配置されるようになり、磁力印加手段24によって発生する磁力もしくは磁場が均一になる。   Thus, by installing the feeding terminal portion 32 of the electrostatic chuck device 23 outside the region where the magnetic force generating portion 241 of the magnetic force application means 24 is disposed, the feeding terminal portion 32 of the electrostatic chuck device 23 or The feed line for supplying power does not penetrate the area where the magnetic force generator 241 is disposed. As a result, there is no region in the magnetic force application means 24 where the magnetic force generation part 241 is missing, and the plurality of magnetic force generation parts 241 are continuously arranged, and the magnetic force or magnetic field generated by the magnetic force application means 24 is uniform. Become.

図3では、給電端子部32が静電チャックプレート部31の上面(第1面)側に設置されることとして図示したが、本発明はこれに限定されず、他の配置構造を有することもできる。   Although FIG. 3 illustrates that the feeding terminal portion 32 is disposed on the upper surface (first surface) side of the electrostatic chuck plate portion 31, the present invention is not limited to this, and may have another arrangement structure. it can.

例えば、図4(a)に示すように、本発明の静電チャック装置23の実施例2によると、給電端子部32は、静電チャックプレート部31の側面(第1面及び第2面と交差する第3面)に配置されてもよい。給電端子部32を静電チャックプレート部31の側面に配置することにより、静電チャックプレート部31を実施例1の場合よりX方向又はY方向にさらに短く形成できるようになる。なお、給電端子部32を配置する上述の第3面は、図4(a)に示すような第1面と第2面の外縁部分同士を接続する面ではなくてもよく、
静電チャックプレート部31を実施例1の場合よりもX方向又はY方向に短く形成できるような面であればあらゆる面が含まれる。
For example, as shown in FIG. 4A, according to the second embodiment of the electrostatic chuck device 23 of the present invention, the feeding terminal portion 32 is a side surface of the electrostatic chuck plate portion 31 (a first surface and a second surface It may be disposed on the intersecting third surface). By arranging the feeding terminal portion 32 on the side surface of the electrostatic chuck plate portion 31, the electrostatic chuck plate portion 31 can be formed to be further shorter in the X direction or the Y direction than in the case of the first embodiment. In addition, the above-mentioned 3rd surface which arrange | positions the electric power feeding terminal part 32 may not be a surface which connects the outer edge parts of 1st surface and 2nd surface as shown to Fig.4 (a),
Any surface can be included as long as the electrostatic chuck plate portion 31 can be formed shorter in the X direction or the Y direction than in the case of the first embodiment.

また、図4(b)に示すように、本発明の静電チャック装置23の実施例3によると、給電端子部32は、静電チャックプレート部31の下面(第2面)に配置されてもよい。給電端子部32が静電チャックプレート部31の下面に設置される場合、成膜プロセスにおいて、静電チャックプレート部31の下面に保持される基板10と干渉しないように設置する。   Further, as shown in FIG. 4B, according to the third embodiment of the electrostatic chuck device 23 of the present invention, the feeding terminal portion 32 is disposed on the lower surface (second surface) of the electrostatic chuck plate portion 31. It is also good. When the power supply terminal portion 32 is installed on the lower surface of the electrostatic chuck plate portion 31, it is installed so as not to interfere with the substrate 10 held on the lower surface of the electrostatic chuck plate portion 31 in the film forming process.

静電チャック装置23の給電端子部32を、静電チャックプレート部31の上面から磁力発生部241の配置領域の外側に向けて、つまり、磁力発生部241の配置領域を貫通しないように設置しながらも、静電チャックプレート部31のX方向またはY方向への長さが長くなることを防止するため、図4(c)に示すように、給電端子部32の形状を曲がった形状とすることもできる(実施例4)。ただし、この場合、静電チャックプレート部31の上面のうち磁力印加手段24によって覆われる領域内に給電端子部32が配置されるので、磁力印加手段24が静電チャックプレート部31に十分に近接するように給電端子部32の厚さを調節してもよく、給電端子部32の厚さの減少による抵抗増加を防止するため、静電チャックプレート部31の上面の一部を削ってその上に給電端子部32を設置することもできる。   Install the feed terminal portion 32 of the electrostatic chuck device 23 from the upper surface of the electrostatic chuck plate portion 31 to the outside of the arrangement region of the magnetic force generation unit 241, that is, do not penetrate the arrangement region of the magnetic force generation unit 241. However, in order to prevent the length of the electrostatic chuck plate portion 31 in the X direction or Y direction from becoming long, as shown in FIG. 4C, the shape of the feeding terminal portion 32 is bent. (Example 4). However, in this case, since the feeding terminal portion 32 is disposed in the region covered by the magnetic force application means 24 on the upper surface of the electrostatic chuck plate portion 31, the magnetic force application means 24 is sufficiently close to the electrostatic chuck plate portion 31. The thickness of the feed terminal portion 32 may be adjusted to reduce the thickness of the feed terminal portion 32 so that a part of the upper surface of the electrostatic chuck plate portion 31 is scraped to prevent an increase in resistance. The feed terminal portion 32 can also be installed on the

以上、本発明の各実施例における静電チャック装置23の給電端子部32の配置構造について図3及び4を挙げて説明したが、本発明はこれに限定されず、給電端子部32を磁力発生部241の配置領域外側に、つまり、磁力発生部241の配置領域を貫通しないように設置することができる限り、多様な配置構造及び形状が考えられる。例えば、成膜装置2の真空チャンバ20外側から引き込まれる給電線の設置位置に従って、給電線との連結がより簡単になるように給電端子部32を多様な形状とすることが考えられる。例えば、図4(a)に図示された給電端子部32の自由先端部が、成膜装置2の真空チャンバ20外部上部から引き込まれる給電線との連結をより簡単にするため、上方に向かって曲がった形状を持つように変形してもよい。   Although the arrangement structure of the feeding terminal portion 32 of the electrostatic chuck device 23 in each embodiment of the present invention has been described with reference to FIGS. 3 and 4, the present invention is not limited thereto. A variety of arrangement structures and shapes can be considered as long as they can be installed outside the arrangement area of the portion 241, that is, so as not to penetrate the arrangement area of the magnetic force generation unit 241. For example, according to the installation position of the feeder which is drawn in from the vacuum chamber 20 outer side of the film-forming apparatus 2, it is possible to make the feeder terminal part 32 into various shapes so that connection with a feeder becomes easier. For example, the free end of the feed terminal 32 shown in FIG. 4A is directed upward to simplify the connection with the feed line drawn in from the upper portion outside the vacuum chamber 20 of the film forming apparatus 2. It may be deformed to have a bent shape.

また、図4(d)に示すように、静電チャック装置23の給電端子部32が磁力印加手段24の磁力発生部241が配置される領域を通過せず、磁力印加手段24の他の部分を貫通するように設けられてもよい。この場合、給電端子部32が磁力印加手段24を貫通するが、磁力発生部241の配置領域を避けて貫通するので、磁力発生部241の配置に影響を及ぼすことはなく、均一な磁場を維持できるようになる。   Further, as shown in FIG. 4D, the feeding terminal portion 32 of the electrostatic chuck device 23 does not pass through the area where the magnetic force generating portion 241 of the magnetic force applying means 24 is disposed, and the other portion of the magnetic force applying means 24. It may be provided to penetrate the In this case, although the feed terminal portion 32 penetrates the magnetic force application means 24 but avoids the arrangement region of the magnetic force generation portion 241 and penetrates, the arrangement of the magnetic force generation portion 241 is not affected, and a uniform magnetic field is maintained. become able to.

<静電チャックプレート部及び基板支持部材の構造>
以下、図5を参照して本実施例の静電チャックプレート部31及び基板支持台21の支持部の構造について説明する。
<Structure of electrostatic chuck plate portion and substrate support member>
Hereinafter, the structures of the electrostatic chuck plate portion 31 and the support portion of the substrate support 21 according to the present embodiment will be described with reference to FIG.

本実施例の静電チャックプレート部31は、複数の基板保持部を含む。例えば、本実施例の静電チャックプレート部31は、図5(a)に示すとおり、2つの基板保持部312、313を持ち、図5(b)に示す場合は、3つの基板保持部312、313、314を持つが、これに限らず、基板の保持精度の制御のため、これより多くの基板保持部を持つこともできる。   The electrostatic chuck plate unit 31 of the present embodiment includes a plurality of substrate holding units. For example, as shown in FIG. 5A, the electrostatic chuck plate portion 31 of the present embodiment has two substrate holding portions 312 and 313, and in the case shown in FIG. 5B, three substrate holding portions 312. , 313, 314, but the present invention is not limited to this, and it is possible to have more substrate holders for controlling the substrate holding accuracy.

複数の基板保持部は、基板の長辺方向(Y軸方向)に細長い形状を持ち、基板の短辺方向(X軸方向)に分離されるが、これに限らず、基板の長辺方向に分離することもできる。複数の基板保持部は、物理的に一つのプレートの内の電気回路が複数に分離されることで構成されていてもよいし、物理的に分離された複数のサブプレートで構成されていても
よい。複数の基板保持部それぞれに独立的に基板保持のための電圧が印加されるように構成されていればよく(つまり、複数の基板保持部それぞれへの基板の保持が独立的に制御できる限り)、その構成によって、物理的構造及び電気回路的構造は変わりうる。
The plurality of substrate holding portions have an elongated shape in the long side direction (Y axis direction) of the substrate and are separated in the short side direction (X axis direction) of the substrate, but the invention is not limited thereto. It can also be separated. The plurality of substrate holders may be configured by physically separating the electric circuit in one plate into a plurality, or may be configured by a plurality of physically separated sub plates. Good. It is sufficient if the voltage for substrate holding is independently applied to each of the plurality of substrate holding units (that is, as long as holding of the substrate to each of the plurality of substrate holding units can be independently controlled) Depending on the configuration, the physical structure and the electrical circuit structure may change.

本実施例の静電チャックプレート部31の複数の基板保持部312、313、314には、複数の基板保持部のうち基板のある一つの長辺(第1辺)側に配置された第1基板保持部312から基板の他の長辺(第2辺)側に配置された第2基板保持部312に向かって順番に(図5の矢印参照)電圧が印加される。つまり、図5(a)に示すとおり、第1基板保持部312に先に電圧が印加され、次いで、第2基板保持部313に電圧が印加される。図5(b)に図示する静電チャックプレート部31においては、第1基板保持部312に最初に吸着電圧が印加され、次いで、第3基板保持部314、第2基板保持部313の順で電圧が印加される。   The plurality of substrate holding portions 312, 313, 314 of the electrostatic chuck plate portion 31 of the present embodiment are disposed on the side of one long side (first side) with a substrate among the plurality of substrate holding portions. A voltage is applied in order (see the arrow in FIG. 5) from the substrate holding portion 312 to the second substrate holding portion 312 disposed on the other long side (second side) side of the substrate. That is, as shown in FIG. 5A, a voltage is first applied to the first substrate holder 312, and then a voltage is applied to the second substrate holder 313. In the electrostatic chuck plate unit 31 illustrated in FIG. 5B, an attraction voltage is first applied to the first substrate holding unit 312, and then, in order of the third substrate holding unit 314 and the second substrate holding unit 313. A voltage is applied.

基板は、第1基板保持部312によって基板の第1辺側の周縁部が静電チャックプレート部31に最初に保持され、次いで第3基板保持部314によって基板の中央部が保持され、第2基板保持部313によって基板の第2辺側の周縁部が最後に保持される。これにより、基板中央部の撓みを効果的に基板の第2辺側の周縁部に伸ばすことができるようになる。すなわち、第1辺側の周縁部、中央部、第2辺側の周縁部の順番で基板が静電チャックプレート部31に保持されるので、基板中央部の撓みを第2辺側の周縁部に伸ばすことができるようになり、基板中央部にしわが残らないようにすることができる。   The first substrate holding portion 312 first holds the peripheral portion on the first side of the substrate on the electrostatic chuck plate portion 31 and then the third substrate holding portion 314 holds the central portion of the substrate. The peripheral portion on the second side of the substrate is finally held by the substrate holding portion 313. Thereby, the deflection of the central portion of the substrate can be effectively extended to the peripheral portion on the second side of the substrate. That is, since the substrate is held by the electrostatic chuck plate portion 31 in the order of the peripheral portion on the first side, the central portion, and the peripheral portion on the second side, the bending of the central portion of the substrate is performed on the peripheral portion on the second side. It is possible to extend it and to prevent the formation of wrinkles in the center of the substrate.

本実施例の成膜装置2の基板支持台21の支持部は、基板10を支持する複数の支持部材211、212を含む。   The support portion of the substrate support 21 of the film forming apparatus 2 of the present embodiment includes a plurality of support members 211 and 212 for supporting the substrate 10.

例えば、図5(a)に示したとおり、基板支持台21の支持部は少なくとも基板の対向する二辺側の周縁部を支持するように設置される。つまり、基板支持台21の支持部は少なくとも、基板の対向する二辺のいずれかの一辺(第1辺)に沿って配置される複数の第1支持部材211と他の辺(第2辺)に沿って配置される複数の第2支持部材212とを含む。   For example, as shown in FIG. 5A, the support portion of the substrate support 21 is installed so as to support at least the opposing two side edge portions of the substrate. That is, the support portion of the substrate support 21 is at least a plurality of first support members 211 disposed along one side (first side) of two opposing sides of the substrate and the other side (second side) And a plurality of second support members 212 disposed along the

複数の第1支持部材211は基板の長辺方向(Y方向)に沿って配置され、複数の第2支持部材212は複数の第1支持部材211と対向するように基板の長辺方向(Y方向)に沿って配置されてもよい。   The plurality of first support members 211 are disposed along the long side direction (Y direction) of the substrate, and the plurality of second support members 212 are opposed to the plurality of first support members 211 in the long side direction (Y Direction) may be arranged along the

本実施例の基板支持台21の支持部は、図5(b)に示すとおり、基板の一端側である第1辺側の周縁部を支持するように配置される複数の第1支持部材211、第1辺と対向し、基板の他端側である第2辺側の周縁部を支持するように配置される複数の第2支持部材212以外に、第1辺と第2辺をつなぐ第3辺側及び第4辺側の周縁部を支持するように第2方向(短辺方向、X方向)に沿って配置される複数の第3支持部材213及び複数の第4支持部材214が含まれる。   As shown in FIG. 5B, the support portion of the substrate support base 21 of the present embodiment is provided with a plurality of first support members 211 arranged to support the peripheral portion on the first side, which is one end side of the substrate. A second side connecting the first side and the second side, in addition to the plurality of second support members 212 arranged to face the first side and to support the peripheral edge on the second side, which is the other end side of the substrate, A plurality of third support members 213 and a plurality of fourth support members 214 disposed along the second direction (short side direction, X direction) to support the peripheral portions on the three sides and the fourth side are included. Be

図5では、第1支持部材211及び第2支持部材212がそれぞれ複数の支持部材から成る構成を示したが、本発明はこれに限定されず、第1支持部材211及び第2支持部材212の少なくとも一方はそれぞれ第1方向に長く延びる一つの支持部材で構成されてもよい。   Although FIG. 5 shows a configuration in which the first support member 211 and the second support member 212 are each composed of a plurality of support members, the present invention is not limited to this, and the first support member 211 and the second support member 212 At least one of them may be configured by one support member extending in the first direction.

それぞれの支持部材は、基板の下面の周縁部を支持する基板支持面部215と基板支持面部を弾性的に支持する弾性体部216を含む。基板支持面部215上には基板の損傷を防止するため、フッ素でコーティングされたパッド(不図示)が設置される。支持部材の弾性体部216はコイルばね、板ばねやシリコンゴムのような弾性体を含み、基板を静電
チャックプレート部31に吸着させる時、静電チャックプレート部31からの押圧力によって、弾性変位することで、基板が静電チャックプレート部と支持部材の間で破損されることを防止する。
Each support member includes a substrate support surface portion 215 for supporting the peripheral portion of the lower surface of the substrate and an elastic body portion 216 for elastically supporting the substrate support surface portion. A fluorine-coated pad (not shown) is provided on the substrate support surface 215 to prevent damage to the substrate. The elastic body portion 216 of the support member includes an elastic body such as a coil spring, a plate spring, or silicon rubber, and when the substrate is adsorbed to the electrostatic chuck plate portion 31, the elastic force due to the pressing force from the electrostatic chuck plate portion 31 The displacement prevents the substrate from being broken between the electrostatic chuck plate and the support member.

第1支持部材211の基板支持面部215は、基板を静電チャックプレート部31に全体的に平らに付着するため、第2支持部材212の基板支持面部215より高さが高くなるように設置することができる。また、第1支持部材211の弾性体部216の弾性係数を、第2支持部材212の弾性体部216の弾性係数とは異なるようにしたり(例えば、より大きくしたり)、弾性体部216の長さを互いに異なるようにして(例えば、より長くして)、第1支持部材211が基板を支持する支持力を第2支持部材212が基板を支持する支持力とは異なるように(例えば、より大きく)することもできる。   The substrate support surface portion 215 of the first support member 211 is installed so as to be higher in height than the substrate support surface portion 215 of the second support member 212 in order to attach the substrate to the electrostatic chuck plate portion 31 flatly as a whole. be able to. Also, the elastic modulus of the elastic body portion 216 of the first support member 211 may be made different (for example, larger) than the elastic modulus of the elastic body portion 216 of the second support member 212, or The supporting force with which the first support member 211 supports the substrate is different from the supporting force with which the second support member 212 supports the substrate (for example, by making the lengths different from each other (for example, longer) Can be made larger).

<電子デバイスの製造方法>
次に、本実施例の成膜装置を用いた電子デバイスの製造方法の一例を説明する。以下、電子デバイスの例として有機EL表示装置の構成及び製造方法を例示する。
<Method of Manufacturing Electronic Device>
Next, an example of the manufacturing method of the electronic device using the film-forming apparatus of a present Example is demonstrated. Hereinafter, the configuration and manufacturing method of the organic EL display device will be illustrated as an example of the electronic device.

まず、製造する有機EL表示装置について説明する。図6(a)は有機EL表示装置60の全体図、図6(b)は1画素の断面構造を表している。   First, an organic EL display device to be manufactured will be described. FIG. 6 (a) is a general view of the organic EL display device 60, and FIG. 6 (b) shows a cross-sectional structure of one pixel.

図6(a)に示すように、有機EL表示装置60の表示領域61には、発光素子を複数備える画素62がマトリクス状に複数配置されている。詳細は後で説明するが、発光素子のそれぞれは、一対の電極に挟まれた有機層を備えた構造を有している。なお、ここでいう画素とは、表示領域61において所望の色の表示を可能とする最小単位を指している。本実施例にかかる有機EL表示装置の場合、互いに異なる発光を示す第1発光素子62R、第2発光素子62G、第3発光素子62Bの組合せにより画素62が構成されている。画素62は、赤色発光素子と緑色発光素子と青色発光素子の組合せで構成されることが多いが、黄色発光素子とシアン発光素子と白色発光素子の組み合わせでもよく、少なくとも1色以上であれば特に制限されるものではない。   As shown in FIG. 6A, in the display region 61 of the organic EL display device 60, a plurality of pixels 62 including a plurality of light emitting elements are arranged in a matrix. Although details will be described later, each of the light emitting elements has a structure including an organic layer sandwiched between a pair of electrodes. The term “pixel” as used herein refers to the minimum unit capable of displaying a desired color in the display area 61. In the case of the organic EL display device according to the present example, the pixel 62 is configured by a combination of the first light emitting element 62R, the second light emitting element 62G, and the third light emitting element 62B that emit light different from each other. The pixel 62 is often composed of a combination of a red light emitting element, a green light emitting element and a blue light emitting element, but may be a combination of a yellow light emitting element, a cyan light emitting element and a white light emitting element It is not limited.

図6(b)は、図6(a)のA−B線における部分断面模式図である。画素62は、基板63上に、第1電極(陽極)64と、正孔輸送層65と、発光層66R、66G、66Bのいずれかと、電子輸送層67と、第2電極(陰極)68と、を備える有機EL素子を有している。これらのうち、正孔輸送層65、発光層66R、66G、66B、電子輸送層67が有機層に当たる。また、本実施例では、発光層66Rは赤色を発する有機EL層、発光層66Gは緑色を発する有機EL層、発光層66Bは青色を発する有機EL層である。発光層66R、66G、66Bは、それぞれ赤色、緑色、青色を発する発光素子(有機EL素子と記述する場合もある)に対応するパターンに形成されている。また、第1電極64は、発光素子ごとに分離して形成されている。正孔輸送層65と電子輸送層67と第2電極68は、複数の発光素子62R、62G、62Bと共通で形成されていてもよいし、発光素子毎に形成されていてもよい。なお、第1電極64と第2電極68とが異物によってショートするのを防ぐために、第1電極64間に絶縁層69が設けられている。さらに、有機EL層は水分や酸素によって劣化するため、水分や酸素から有機EL素子を保護するための保護層70が設けられている。   FIG. 6 (b) is a schematic partial cross-sectional view taken along line A-B of FIG. 6 (a). The pixel 62 includes a first electrode (anode) 64, a hole transport layer 65, one of light emitting layers 66R, 66G, and 66B, an electron transport layer 67, and a second electrode (cathode) 68 on a substrate 63. , And an organic EL element comprising Among these, the hole transport layer 65, the light emitting layers 66R, 66G, 66B, and the electron transport layer 67 correspond to the organic layer. Further, in the present embodiment, the light emitting layer 66R is an organic EL layer emitting red, the light emitting layer 66G is an organic EL layer emitting green, and the light emitting layer 66B is an organic EL layer emitting blue. The light emitting layers 66R, 66G, 66B are formed in patterns corresponding to light emitting elements (sometimes described as organic EL elements) that emit red, green and blue, respectively. In addition, the first electrode 64 is formed separately for each light emitting element. The hole transport layer 65, the electron transport layer 67, and the second electrode 68 may be formed in common with the plurality of light emitting elements 62R, 62G, and 62B, or may be formed for each light emitting element. An insulating layer 69 is provided between the first electrodes 64 in order to prevent the first electrodes 64 and the second electrodes 68 from being short-circuited by foreign matter. Furthermore, since the organic EL layer is degraded by moisture and oxygen, a protective layer 70 is provided to protect the organic EL element from moisture and oxygen.

図6(b)では正孔輸送層65や電子輸送層67が一つの層で示されているが、有機EL表示素子の構造によって、正孔ブロック層や電子ブロック層を含む複数の層で形成されてもよい。また、第1電極64と正孔輸送層65との間には第1電極64から正孔輸送層65への正孔の注入を円滑に行うことのできるエネルギーバンド構造を有する正孔注入層を形成することもできる。同様に、第2電極68と電子輸送層67の間にも電子注入層を形成することができる。   Although the hole transport layer 65 and the electron transport layer 67 are shown in one layer in FIG. 6B, they are formed of a plurality of layers including the hole block layer and the electron block layer depending on the structure of the organic EL display element. It may be done. In addition, between the first electrode 64 and the hole transport layer 65, there is provided a hole injection layer having an energy band structure capable of smoothly injecting holes from the first electrode 64 into the hole transport layer 65. It can also be formed. Similarly, an electron injection layer can be formed between the second electrode 68 and the electron transport layer 67 as well.

次に、有機EL表示装置の製造方法の例について具体的に説明する。   Next, an example of a method of manufacturing an organic EL display device will be specifically described.

まず、有機EL表示装置を駆動するための回路(不図示)及び第1電極64が形成された基板63を準備する。   First, a circuit 63 (not shown) for driving the organic EL display device and the substrate 63 on which the first electrode 64 is formed are prepared.

第1電極64が形成された基板63の上にアクリル樹脂をスピンコートで形成し、アクリル樹脂をリソグラフィ法により、第1電極64が形成された部分に開口が形成されるようにパターニングし絶縁層69を形成する。この開口部が、発光素子が実際に発光する発光領域に相当する。   An acrylic resin is formed by spin coating on the substrate 63 on which the first electrode 64 is formed, and the acrylic resin is patterned by lithography so that an opening is formed in the portion where the first electrode 64 is formed. Form 69 The opening corresponds to a light emitting region in which the light emitting element actually emits light.

絶縁層69がパターニングされた基板63を第1の有機材料成膜装置に搬入し、基板保持ユニットにて基板63を保持し、正孔輸送層65を、表示領域の第1電極64の上に共通する層として成膜する。正孔輸送層65は真空蒸着により成膜される。実際には正孔輸送層65は表示領域61よりも大きなサイズに形成されるため、高精細なマスクは不要である。   The substrate 63 on which the insulating layer 69 is patterned is carried into the first organic material film forming apparatus, the substrate holding unit holds the substrate 63, and the hole transport layer 65 is placed on the first electrode 64 in the display area. The film is formed as a common layer. The hole transport layer 65 is deposited by vacuum evaporation. In practice, the hole transport layer 65 is formed to have a size larger than that of the display area 61, so a high definition mask is not necessary.

次に、正孔輸送層65までが形成された基板63を第2の有機材料成膜装置に搬入し、基板支持台21にて保持する。基板支持台21上の基板を静電チャック装置23によって保持した後、基板63とマスクとのアライメントを行う。続いて、基板63をマスクの上に載置し、基板63とマスクを磁力印加手段24によって密着させる。この状態で、基板63の赤色を発する素子を配置する部分に、赤色を発する発光層66Rを成膜する。   Next, the substrate 63 on which the hole transport layer 65 has been formed is carried into the second organic material film forming apparatus and held by the substrate support 21. After the substrate on the substrate support 21 is held by the electrostatic chuck device 23, alignment between the substrate 63 and the mask is performed. Subsequently, the substrate 63 is placed on the mask, and the substrate 63 and the mask are brought into close contact by the magnetic force application means 24. In this state, the light emitting layer 66R emitting red is formed on the portion of the substrate 63 where the element emitting red is disposed.

本発明によると、静電チャック装置23の給電端子部32が磁力印加手段24の磁力発生部241の配置領域の外側に設置され、磁力発生部241の配置領域を貫通しないようになるので、磁力印加手段24によってマスクへ作用する磁力を均一に維持することができ、基板63とマスクとの間の密着度を向上させることができる。   According to the present invention, the feeding terminal portion 32 of the electrostatic chuck device 23 is disposed outside the arrangement region of the magnetic force generation unit 241 of the magnetic force application means 24 and does not penetrate the arrangement region of the magnetic force generation unit 241. The magnetic force acting on the mask can be uniformly maintained by the application means 24, and the degree of adhesion between the substrate 63 and the mask can be improved.

発光層66Rの成膜と同様に、第3の有機材料成膜装置により緑色を発する発光層66Gを成膜し、さらに第4の有機材料成膜装置により青色を発する発光層66Bを成膜する。発光層66R、66G、66Bの成膜が完了した後、第5の成膜装置により表示領域61の全体に電子輸送層67を成膜する。電子輸送層67は、3色の発光層66R、66G、66Bに共通の層として形成される。   Similar to the film formation of the light emitting layer 66R, the light emitting layer 66G emitting green is formed by the third organic material film forming apparatus, and the light emitting layer 66B emitting blue is formed by the fourth organic material film forming apparatus. . After film formation of the light emitting layers 66R, 66G, and 66B is completed, the electron transport layer 67 is formed on the entire display region 61 by the fifth film forming apparatus. The electron transport layer 67 is formed as a layer common to the three color light emitting layers 66R, 66G, and 66B.

電子輸送層67まで形成された基板63を金属性蒸着材料成膜装置で移動させて第2電極68を成膜する。   The substrate 63 formed up to the electron transport layer 67 is moved by a metallic vapor deposition material deposition apparatus to deposit a second electrode 68.

その後プラズマCVD装置に移動して保護層70を成膜して、有機EL表示装置60が完成する。   Thereafter, it moves to a plasma CVD apparatus to form a protective layer 70, and the organic EL display device 60 is completed.

絶縁層69がパターニングされた基板63を成膜装置に搬入してから保護層70の成膜が完了するまでは、水分や酸素を含む雰囲気にさらしてしまうと、有機EL材料からなる発光層が水分や酸素によって劣化してしまうおそれがある。従って、本実施例において、成膜装置間の基板の搬入搬出は、真空雰囲気または不活性ガス雰囲気の下で行われる。   After the substrate 63 on which the insulating layer 69 is patterned is carried into a film forming apparatus and the film is exposed to an atmosphere containing moisture or oxygen until the film formation of the protective layer 70 is completed, the light emitting layer made of the organic EL material It may be degraded by moisture or oxygen. Therefore, in the present embodiment, the loading and unloading of the substrate between the film forming apparatuses is performed under a vacuum atmosphere or an inert gas atmosphere.

上記実施例は本発明の一例を示すものでしかなく、本発明が適用可能な構成は上記実施例の構成に限定されないし、その技術思想の範囲内で適宜に変形しても良い。   The above embodiment shows only an example of the present invention, and the configuration to which the present invention can be applied is not limited to the configuration of the above embodiment, and may be appropriately modified within the scope of the technical idea thereof.

10:基板
21:基板支持台
22:マスク台
23:静電チャック装置
24:磁力印加手段
30:マスク取付装置
31:静電チャックプレート
32:給電端子部
241:磁力発生部
10: Substrate 21: Substrate support 22: Mask base 23: Electrostatic chuck device 24: Magnetic force application means 30: Mask mounting device 31: Electrostatic chuck plate 32: Power supply terminal portion 241: Magnetic force generating portion

本発明は、成膜装置及び成膜方法に関するもので、具体的には、成膜装置において、基板を静電引力によって保持する静電チャックプレート部に電を供給するための給電端子部の構造に関するものである。
The present invention relates to a film forming apparatus and film forming method, specifically, in the film forming apparatus, the feeding terminal portion for supplying power to the electrostatic chuck plate portion for holding the substrate by electrostatic attraction It relates to the structure.

したがって、静電チャックを用いて基板を保持し、このような基板とマスクをマグネット板により密着させる構造の成膜装置においては、静電チャックがマグネット板の下方で基板を保持することになる。従来技術ではマグネット板の下部に配置される静電チャックに電を供給するため、成膜装置の外部からの給電線がマグネット板を貫通して、マグネット板の下部に配置される静電チャックに到達するように設置した。
Therefore, in a film forming apparatus having a structure in which a substrate is held using an electrostatic chuck and such a substrate and a mask are in close contact with a magnet plate, the electrostatic chuck holds the substrate below the magnet plate. In the prior art for supplying power to the electrostatic chuck disposed beneath the magnet plate, feed lines from an external of the deposition apparatus through the magnet plate, the electrostatic chuck disposed beneath the magnet plate Set up to reach the

つまり、図7に示すように、マグネット板724のマグネット725が配置されている領域内に、マグネット725以外に静電チャック723に電を供給するための給電端子731が設置される。これにより、マグネット板724のマグネット725が配置される
領域内には、給電端子731が一緒に配置されて、マグネット725が配置されない局所領域が存在することになる。
That is, as shown in FIG. 7, in a region where the magnet 725 of the magnet plate 724 is disposed, the feeding terminal 731 for supplying an electrostatic chuck 723 two power other than the magnet 725 is installed. As a result, in the region of the magnet plate 724 where the magnets 725 are arranged, there is a local region where the feed terminals 731 are arranged together and the magnets 725 are not arranged.

本発明は、静電チャックを用いて基板を保持し、磁力印加手段を用いて基板とマスクを密着させる構造の成膜装置において、磁力印加手段による磁力の均一度への影響を低減しながらも静電チャックへの電供給が可能な構造を有する静電チャック装置、マスク取付装置、これらを含む成膜装置、これらを用いる成膜方法及び電子デバイスの製造方法を提供することを主な目的とする。
According to the present invention, in a film forming apparatus having a structure in which the substrate is held using an electrostatic chuck and the substrate and the mask are closely adhered using a magnetic force application unit, the influence of the magnetic force application unit on the uniformity of the magnetic force is reduced electrostatic chucking device having a structure capable power supply to the electrostatic chuck, mask mounting apparatus, film formation apparatus comprising these, primarily to provide a film formation method and a manufacturing method of an electronic device using these I assume.

本発明の第1態様による静電チャック装置は、磁力発生部からの磁力によってマスクを基板の成膜面上に付着させるための磁力印加手段に向かって面している第1面と、前記第1面の反対側の面であって、前記基板の成膜面の反対側の面を保持するための第2面とを含む静電チャックプレート部と、前記静電チャックプレート部に電を供給するための給電端子部とを含み、前記給電端子部は、前記磁力印加手段の前記磁力発生部が配置される領域の外側に設けられる。
In the electrostatic chuck device according to the first aspect of the present invention, a first surface facing a magnetic force application means for causing a mask to adhere to a film formation surface of a substrate by a magnetic force from a magnetic force generation unit; a surface opposite to the first surface, and the electrostatic chuck plate portion and a second surface for holding the opposite side of the film-forming surface of the substrate, the power to the electrostatic chuck plate portion And a feed terminal portion for supplying, wherein the feed terminal portion is provided outside a region where the magnetic force generating portion of the magnetic force application means is disposed.

本発明の第2態様によるマスク取付装置は、基板の成膜面の反対側の面を保持するための静電チャックプレート部と、前記静電チャックプレート部に電を供給するための給電端子部と、磁力発生部を有し、前記磁力発生部からの磁力によってマスクを前記基板の成膜面に付着させるための磁力印加手段とを含み、前記静電チャックプレート部は、前記磁力印加手段に向かって面している第1面と、前記第1面の反対側の面であって、前記基板の成膜面の反対側の面を保持するための第2面とを含み、前記給電端子部は、前記磁力印加手段の前記磁力発生部が配置される領域の外側に設けられる。
本発明の第3態様によるマスク取付装置は、基板の成膜面とは反対側の面を保持するための静電チャックプレート部と、前記静電チャックプレート部に電力を供給するための給電端子部と、磁力発生部を有し、前記磁力発生部からの磁力を前記基板および前記静電チャックプレート部を挟んでマスクに印加するための磁力印加手段と、を含み、前記給電端子部を前記基板の前記成膜面を含む平面上に投影した領域は、前記磁力発生部を前記基板の前記成膜面を含む平面上に投影した領域と重複しない。
本発明の第4態様によるマスク取付装置は、基板の成膜面とは反対側の面を保持するための静電チャックプレート部と、前記静電チャックプレート部に電力を供給するための給電端子部と、磁力発生部を有し、前記磁力発生部からの磁力を前記基板および前記静電チ
ャックプレート部を挟んでマスクに印加するための磁力印加手段と、を含み、前記給電端子部は、前記磁力発生部からの磁力が前記基板および前記静電チャックプレート部を挟んで前記マスクに印加された状態において、前記磁力印加手段の前記磁力発生部が配置される領域の外側に設けられる。
Mask mounting apparatus according to the second aspect of the present invention, power supply terminal for supplying the electrostatic chuck plate portion for holding the opposite side of the deposition surface of the substrate, the power to the electrostatic chuck plate portion And a magnetic force application unit for attaching a mask to the film formation surface of the substrate by the magnetic force from the magnetic force generation unit, and the electrostatic chuck plate unit includes the magnetic force application unit. A second surface facing the first surface and a second surface opposite to the first surface, the second surface for holding the opposite surface of the film formation surface of the substrate; The terminal portion is provided outside the region where the magnetic force generating portion of the magnetic force application means is disposed.
A mask mounting apparatus according to a third aspect of the present invention includes an electrostatic chuck plate portion for holding a surface opposite to a film formation surface of a substrate, and a feeding terminal for supplying power to the electrostatic chuck plate portion. A magnetic force generation unit, and a magnetic force application unit for applying a magnetic force from the magnetic force generation unit to the mask with the substrate and the electrostatic chuck plate interposed therebetween; The area projected on the plane including the film formation surface of the substrate does not overlap with the area projected on the plane including the film formation surface of the substrate.
A mask mounting apparatus according to a fourth aspect of the present invention includes an electrostatic chuck plate portion for holding a surface opposite to a film formation surface of a substrate, and a feeding terminal for supplying power to the electrostatic chuck plate portion. Part and a magnetic force generating part, and the magnetic force from the magnetic force
And a magnetic force application unit for applying a magnetic force to the mask with the chuck plate portion interposed therebetween, wherein the magnetic force from the magnetic force generation portion is applied to the mask with the substrate and the electrostatic chuck plate portion interposed therebetween in the feeding terminal portion. In the second state, the magnetic force application unit is provided outside the area where the magnetic force generation unit is disposed.

本発明の第態様による成膜装置は、本発明の第2態様によるマスク取付装置を含む。
本発明の第態様による成膜装置は、マスクに磁力を印加するための磁力印加手段と、前記磁力印加手段の下方に設置され、基板を保持するための静電チャックプレート部と、前記静電チャックプレート部に電を供給するための給電線部とを含み、前記磁力印加手段は、磁力を発生させるための複数の磁力発生部を含み、前記給電線部は、前記磁力印加手段の前記複数の磁力発生部が配置される領域を貫通しない。
本発明の第7態様による成膜装置は、本発明の第3または第4態様によるマスク取付装置を含む。
The film deposition apparatus according to the fifth aspect of the present invention includes the mask attachment apparatus according to the second aspect of the present invention.
A film forming apparatus according to a sixth aspect of the present invention comprises: a magnetic force application unit for applying a magnetic force to a mask; an electrostatic chuck plate unit disposed below the magnetic force application unit; and holding the substrate; and a feed line for supplying the power to the electrostatic chuck plate portion, said magnetic force applying means includes a plurality of magnetic force generating unit for generating a magnetic force, the feeder line section, of the magnetic force applying means It does not penetrate the region where the plurality of magnetic force generation units are arranged.
The film forming apparatus according to the seventh aspect of the present invention includes the mask attaching apparatus according to the third or fourth aspect of the present invention.

本発明の第態様による成膜方法は、成膜装置内にマスクを搬入して、マスク台上に載置する段階と、前記成膜装置内に基板を搬入して、基板支持台上に載置する段階と、前記基板支持台上の前記基板を本発明の第1態様による静電チャック装置によって保持する段階と、前記静電チャック装置に保持された前記基板を前記マスク上に載置する段階と、磁力発生部を含む磁力印加手段によって前記マスクと前記マスク上の前記基板を密着させる段階と、蒸着源から蒸発した蒸着材料を、前記マスクを介して前記基板上に成膜させる段階とを含む。
本発明の第9態様による成膜方法は、本発明の第3または第4態様によるマスク取付装置によってマスクを基板の成膜面側に取り付ける段階と、蒸着源から蒸発した蒸着材料を、マスクを介して基板上に成膜させる段階と、を含む。
The film forming method according to the eighth aspect of the present invention comprises the steps of: carrying a mask into the film forming apparatus and placing the mask on the mask table; carrying the substrate into the film forming apparatus; Placing the substrate on the substrate support table by the electrostatic chuck device according to the first aspect of the present invention; placing the substrate held by the electrostatic chuck device on the mask Attaching the mask and the substrate on the mask by means of magnetic force application means including a magnetic force generating part, and depositing the vapor deposition material evaporated from the evaporation source on the substrate through the mask And.
The film forming method according to the ninth aspect of the present invention comprises the steps of: attaching a mask to the film forming surface side of the substrate by the mask attaching apparatus according to the third or fourth aspect of the present invention; Forming a film on the substrate.

本発明の第10態様による電子デバイスの製造方法は、本発明の第8または第9態様による成膜方法を用いて電子デバイスを製造する。
The method of manufacturing an electronic device according to the tenth aspect of the present invention manufactures an electronic device using the film forming method according to the eighth or ninth aspect of the present invention.

本発明によると、磁力印加手段の磁力発生部が配置された領域の外側に静電チャック装置の給電端子部を設けることで、静電チャックプレート部に電を供給するための給電線又は給電端子部が磁力印加手段の磁力発生部の配置領域を貫通せず、磁力印加手段の磁力発生部の配置領域を避けることができる。これによって、磁力印加手段の磁力発生部が配置された領域内に、給電線又は給電端子部の貫通によって磁力発生部が局所的に配置されていない部分が生じないため、磁力印加手段の磁力が不均一になることを防止することができる。その結果、磁力印加手段がマスクを引き寄せる磁場が均一になってマスクと基板間の密着精度が向上する。
According to the present invention, by providing the feeding terminal portion of the electrostatic chucking device to a region outside the magnetic force generating part of the magnetic force applying means is arranged, the feed line or power supply for supplying power to the electrostatic chuck plate portion The terminal portion does not penetrate through the arrangement region of the magnetic force generation unit of the magnetic force application unit, and the arrangement region of the magnetic force generation unit of the magnetic force application unit can be avoided. As a result, there is no part where the magnetic force generation part is not locally arranged due to the penetration of the feed line or the feed terminal part in the area where the magnetic force generation part of the magnetic force application means is arranged. Unevenness can be prevented. As a result, the magnetic field that attracts the mask by the magnetic force application unit becomes uniform, and the contact accuracy between the mask and the substrate is improved.

本実施例において、静電チャック装置23は、図3や後述するように、静電チャックプレート部31に電を供給するための給電線が連結される給電端子部32が、磁力印加手段24の磁力発生部241の配置領域の外側に設置される。これによって、静電チャック装置23の給電線又は給電端子部32が磁力印加手段24の磁力発生部241の配置領域を貫通しないようになる。
In this embodiment, the electrostatic chuck 23, as FIG. 3 and described below, the feeding terminal portion 32 which feed lines for supplying the electrostatic chuck plate 31 two power is connected is, the magnetic force applying means 24 The magnetic force generator 241 is disposed outside the arrangement area of the magnetic force generator 241. As a result, the feed line or the feed terminal portion 32 of the electrostatic chuck device 23 does not penetrate through the region where the magnetic force generating portion 241 of the magnetic force application means 24 is disposed.

本実施例の静電チャック装置23は、基板10の成膜面の反対側の面を静電引力によって保持するための静電チャックプレート部31と、静電チャックプレート部31に電を供給するための給電線が連結される給電端子部32とを含む。
The electrostatic chuck device 23 of this embodiment, supply and the electrostatic chuck plate 31 for holding the opposite side of the film-forming surface of the substrate 10 by electrostatic attraction, an electrostatic chuck plate portion 31 second electrodeposition force And a feed terminal portion 32 to which a feed line for connecting is connected.

このように、静電チャック装置23の給電端子部32を磁力印加手段24の磁力発生部241が配置される領域の外側に設置することで、静電チャック装置23の給電端子部32またはこれに電を供給するための給電線が、磁力発生部241が配置される領域を貫通しないようになる。これによって、磁力印加手段24内に磁力発生部241が抜けた領域がなく、複数の磁力発生部241が連続的に配置されるようになり、磁力印加手段24によって発生する磁力もしくは磁場が均一になる。 Thus, by installing the feeding terminal portion 32 of the electrostatic chuck device 23 outside the region where the magnetic force generating portion 241 of the magnetic force application means 24 is disposed, the feeding terminal portion 32 of the electrostatic chuck device 23 or feed line for supplying the power is, so do not penetrate the area the magnetic force generating unit 241 is disposed. As a result, there is no region in the magnetic force application means 24 where the magnetic force generation part 241 is missing, and the plurality of magnetic force generation parts 241 are continuously arranged, and the magnetic force or magnetic field generated by the magnetic force application means 24 is uniform. Become.

Claims (23)

基板を保持するための静電チャック装置であって、
磁力発生部からの磁力によってマスクを基板の成膜面上に付着させるための磁力印加手段に向かって面している第1面と、前記第1面の反対側の面であって、基板の成膜面の反対側の面を保持するための第2面とを含む静電チャックプレート部と、
前記静電チャックプレート部に電源を供給するための給電端子部と、
を含み、
前記給電端子部は、前記磁力印加手段の前記磁力発生部が配置される領域の外側に設けられることを特徴とする静電チャック装置。
An electrostatic chuck device for holding a substrate, wherein
The first surface facing the magnetic force application means for causing the mask to adhere to the film formation surface of the substrate by the magnetic force from the magnetic force generation portion, and the surface opposite to the first surface, which is the surface of the substrate An electrostatic chuck plate portion including a second surface for holding a surface opposite to the film formation surface;
A feeding terminal portion for supplying power to the electrostatic chuck plate portion;
Including
The electrostatic chuck device is characterized in that the feeding terminal portion is provided outside a region where the magnetic force generating portion of the magnetic force applying means is disposed.
前記給電端子部は、前記静電チャックプレート部の前記第1面に設けられることを特徴とする請求項1に記載の静電チャック装置。   The electrostatic chuck device according to claim 1, wherein the feeding terminal portion is provided on the first surface of the electrostatic chuck plate portion. 前記給電端子部は、前記静電チャックプレート部の前記第2面に設けられることを特徴とする請求項1に記載の静電チャック装置。   The electrostatic chuck device according to claim 1, wherein the power supply terminal portion is provided on the second surface of the electrostatic chuck plate portion. 前記給電端子部は、前記静電チャックプレート部の前記第1面及び前記第2面と交差する第3面に設けられることを特徴とする請求項1に記載の静電チャック装置。   The electrostatic chuck device according to claim 1, wherein the power supply terminal portion is provided on a third surface intersecting with the first surface and the second surface of the electrostatic chuck plate portion. 前記給電端子部は、前記静電チャックプレート部において、前記磁力印加手段によって覆われる領域の外側に設けられることを特徴とする請求項1〜4のいずれか1項に記載の静電チャック装置。   The electrostatic chuck device according to any one of claims 1 to 4, wherein the feeding terminal portion is provided outside the region covered by the magnetic force application unit in the electrostatic chuck plate portion. 前記静電チャックプレート部は複数の基板保持部を含み、前記複数の基板保持部それぞれの保持力を独立して制御できることを特徴とする請求項1〜5のいずれか1項に記載の静電チャック装置。   The electrostatic chuck plate unit according to any one of claims 1 to 5, wherein the electrostatic chuck plate unit includes a plurality of substrate holding units, and holding power of each of the plurality of substrate holding units can be controlled independently. Chuck device. 前記複数の基板保持部それぞれに印加される電圧を独立して制御できることを特徴とする請求項6に記載の静電チャック装置。   7. The electrostatic chuck device according to claim 6, wherein the voltage applied to each of the plurality of substrate holders can be controlled independently. マスクを基板の成膜面側に取り付けるためのマスク取付装置であって、
前記基板の成膜面の反対側の面を保持するための静電チャックプレート部と、
前記静電チャックプレート部に電源を供給するための給電端子部と、
磁力発生部を有し、前記磁力発生部からの磁力によって前記マスクを前記基板の成膜面に付着させるための磁力印加手段と、
を含み、
前記静電チャックプレート部は、前記磁力印加手段に向かって面している第1面と、前記第1面の反対側の面であって、前記基板の成膜面の反対側の面を保持するための第2面とを含み、
前記給電端子部は、前記磁力印加手段の前記磁力発生部が配置される領域の外側に設けられることを特徴とするマスク取付装置。
A mask mounting apparatus for mounting a mask on a film formation side of a substrate, the mask mounting apparatus comprising:
An electrostatic chuck plate portion for holding a surface opposite to the film formation surface of the substrate;
A feeding terminal portion for supplying power to the electrostatic chuck plate portion;
A magnetic force application unit that has a magnetic force generation unit and causes the mask to adhere to the film formation surface of the substrate by the magnetic force from the magnetic force generation unit;
Including
The electrostatic chuck plate portion holds a first surface facing the magnetic force application means and a surface opposite to the first surface and opposite to the film formation surface of the substrate. And a second surface to
The said power supply terminal part is provided outside the area | region where the said magnetic force generation part of the said magnetic force application means is arrange | positioned, The mask attachment apparatus characterized by the above-mentioned.
前記給電端子部は、前記静電チャックプレート部の前記第1面に設けられることを特徴とする請求項8に記載のマスク取付装置。   9. The mask mounting apparatus according to claim 8, wherein the power supply terminal portion is provided on the first surface of the electrostatic chuck plate portion. 前記給電端子部は、前記静電チャックプレート部の前記第2面に設けられることを特徴とする請求項8に記載のマスク取付装置。   9. The mask mounting device according to claim 8, wherein the power supply terminal portion is provided on the second surface of the electrostatic chuck plate portion. 前記給電端子部は、前記静電チャックプレート部の前記第1面及び前記第2面と交差す
る第3面に設けられることを特徴とする請求項8に記載のマスク取付装置。
9. The mask mounting apparatus according to claim 8, wherein the power supply terminal portion is provided on a third surface intersecting the first surface and the second surface of the electrostatic chuck plate portion.
前記給電端子部は、前記静電チャックプレート部において、前記磁力印加手段によって覆われる領域の外側に設けられることを特徴とする請求項8〜11のいずれか1項に記載のマスク取付装置。   The said electric power feeding terminal part is provided in the said electrostatic chuck plate part outside the area | region covered by the said magnetic force application means, The mask attachment apparatus of any one of the Claims 8-11 characterized by the above-mentioned. 前記静電チャックプレート部は複数の基板保持部を含み、前記複数の基板保持部それぞれの保持力を独立して制御できることを特徴とする請求項8〜12のいずれか1項に記載のマスク取付装置。   The mask mounting method according to any one of claims 8 to 12, wherein the electrostatic chuck plate unit includes a plurality of substrate holding units, and holding power of each of the plurality of substrate holding units can be controlled independently. apparatus. 前記複数の基板保持部それぞれに印加される電圧を独立して制御できることを特徴とする請求項13に記載のマスク取付装置。   14. The mask mounting apparatus according to claim 13, wherein the voltage applied to each of the plurality of substrate holders can be controlled independently. マスクを介して基板上に蒸着材料を成膜するための成膜装置であって、
請求項8〜14のいずれか1項に記載のマスク取付装置を含むことを特徴とする成膜装置。
A film forming apparatus for forming a deposition material on a substrate through a mask, the film forming apparatus comprising:
A film deposition apparatus comprising the mask attachment apparatus according to any one of claims 8 to 14.
前記マスク取付装置の静電チャックプレート部の前記第1面及び前記第2面と交差する第3面に沿って配備され、前記基板の成膜面の周縁部を支持するための基板支持台をさらに含むことを特徴とする請求項15に記載の成膜装置。   A substrate supporting table disposed along a third surface intersecting the first surface and the second surface of the electrostatic chuck plate portion of the mask mounting device, for supporting a peripheral portion of a film forming surface of the substrate The film forming apparatus according to claim 15, further comprising: 前記基板支持台は、前記第3面に沿って配備される複数の支持部材を含むことを特徴とする請求項16に記載の成膜装置。   The film deposition apparatus of claim 16, wherein the substrate support comprises a plurality of support members disposed along the third surface. 前記複数の支持部材の一部の支持部材は、他の支持部材と支持力が異なることを特徴とする請求項17に記載の成膜装置。   The film forming apparatus according to claim 17, wherein a supporting member of a part of the plurality of supporting members has a supporting force different from that of another supporting member. マスクを介して基板に蒸着材料を成膜するための成膜装置であって、
前記マスクに磁力を印加するための磁力印加手段と、
前記磁力印加手段の下方に設置され、前記基板を保持するための静電チャックプレート部と、
前記静電チャックプレート部に電源を供給するための給電線部と、
を含み、
前記磁力印加手段は、磁力を発生させるための複数の磁力発生部を含み、
前記給電線部は、前記磁力印加手段の前記複数の磁力発生部が配置される領域を貫通しないことを特徴とする成膜装置。
A film forming apparatus for forming a vapor deposition material on a substrate through a mask, the film forming apparatus comprising:
Magnetic force application means for applying a magnetic force to the mask;
An electrostatic chuck plate portion disposed below the magnetic force application means for holding the substrate;
A feeder line portion for supplying power to the electrostatic chuck plate portion;
Including
The magnetic force application means includes a plurality of magnetic force generation units for generating a magnetic force,
The film forming apparatus according to claim 1, wherein the feed line portion does not penetrate a region where the plurality of magnetic force generation units of the magnetic force application unit is disposed.
前記給電線部は、前記磁力印加手段を貫通しないことを特徴とする請求項19に記載の成膜装置。   The film forming apparatus according to claim 19, wherein the feed line portion does not penetrate the magnetic force application unit. マスクを介して基板上に蒸着材料を成膜するための成膜方法であって、
成膜装置内に前記マスクを搬入して、マスク台上に載置する段階と、
前記成膜装置内に前記基板を搬入して、基板支持台上に載置する段階と、
前記基板支持台上の前記基板を、請求項1〜7のいずれか1項に記載の静電チャック装置によって保持する段階と、
前記静電チャック装置に保持 された前記基板をマスク上に載置する段階と、
磁力発生部を含む磁力印加手段によって前記マスクと前記マスク上の前記基板を密着させる段階と、
蒸着源から蒸発した蒸着材料を、前記マスクを介して前記基板上に成膜させる段階と、を含むことを特徴とする成膜方法。
A film forming method for forming a vapor deposition material on a substrate through a mask, the film forming method comprising:
Loading the mask into a deposition apparatus and placing the mask on a mask table;
Loading the substrate into the deposition apparatus and placing the substrate on a substrate support table;
Holding the substrate on the substrate support by the electrostatic chuck device according to any one of claims 1 to 7;
Placing the substrate held by the electrostatic chuck device on a mask;
Bringing the mask and the substrate on the mask into close contact with each other by a magnetic force application unit including a magnetic force generation unit;
Depositing a deposition material evaporated from a deposition source on the substrate through the mask.
前記基板支持台上の前記基板を、請求項1〜7のいずれか1項に記載の静電チャック装置によって保持する段階と、
前記静電チャック装置に保持された前記基板をマスク上に載置する段階と、の間に、
前記静電チャック装置に保持された前記基板を前記マスクに対して位置調整するアライメント段階を含むことを特徴とする請求項21に記載の成膜方法。
Holding the substrate on the substrate support by the electrostatic chuck device according to any one of claims 1 to 7;
Placing the substrate held by the electrostatic chuck device on a mask;
22. The film forming method according to claim 21, further comprising an alignment step of adjusting the position of the substrate held by the electrostatic chuck device with respect to the mask.
電子デバイスの製造方法であって、
請求項21に記載の成膜方法を用いて電子デバイスを製造することを特徴とする電子デバイスの製造方法。
A method of manufacturing an electronic device,
A method of manufacturing an electronic device, comprising: manufacturing an electronic device using the film forming method according to claim 21.
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