JP7120545B2 - Film forming apparatus, film forming method, and method for manufacturing organic EL display device using the same - Google Patents

Film forming apparatus, film forming method, and method for manufacturing organic EL display device using the same Download PDF

Info

Publication number
JP7120545B2
JP7120545B2 JP2018160255A JP2018160255A JP7120545B2 JP 7120545 B2 JP7120545 B2 JP 7120545B2 JP 2018160255 A JP2018160255 A JP 2018160255A JP 2018160255 A JP2018160255 A JP 2018160255A JP 7120545 B2 JP7120545 B2 JP 7120545B2
Authority
JP
Japan
Prior art keywords
substrate
support member
film forming
forming apparatus
supporting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2018160255A
Other languages
Japanese (ja)
Other versions
JP2019117922A5 (en
JP2019117922A (en
Inventor
一史 柏倉
博 石井
映之 細谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Tokki Corp
Original Assignee
Canon Tokki Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Tokki Corp filed Critical Canon Tokki Corp
Publication of JP2019117922A publication Critical patent/JP2019117922A/en
Publication of JP2019117922A5 publication Critical patent/JP2019117922A5/ja
Application granted granted Critical
Publication of JP7120545B2 publication Critical patent/JP7120545B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50Substrate holders
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/02631Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material

Description

本発明は成膜装置に関するもので、特に、静電チャックに基板を損傷なく平らに付着させるための基板支持部に関するものである。 The present invention relates to a film forming apparatus, and more particularly to a substrate support for flatly attaching a substrate to an electrostatic chuck without damage.

最近、フラットパネル表示装置として有機EL表示装置が脚光を浴びている。有機EL表示装置は自発光ディスプレイであり、応答速度、視野角、薄型化などの特性が液晶パネルディスプレイより優れており、モニタ、テレビ、スマートフォンに代表される各種携帯端末などで既存の液晶パネルディスプレイに対する代替が加速している。また、自動車用ディスプレイ等にも、その応用分野を広げている。 Recently, an organic EL display device has been spotlighted as a flat panel display device. Organic EL display devices are self-luminous displays, and are superior to liquid crystal panel displays in characteristics such as response speed, viewing angle, and thinness. is accelerating. In addition, the field of application is expanding to automobile displays and the like.

有機EL表示装置の素子は2つの向かい合う電極(カソード電極、アノード電極)の間に発光を起こす有機物層が形成された基本構造を持つ。有機EL表示装置素子の有機物層及び電極層は、成膜装置の真空チャンバーの下部に設けられた蒸着源を加熱することで蒸発された蒸着材料を画素パターンが形成されたマスクを介して真空チャンバー上部に置かれた基板(の下面)に蒸着させることで形成される。 An element of an organic EL display device has a basic structure in which an organic material layer that emits light is formed between two electrodes (a cathode electrode and an anode electrode) facing each other. The organic layer and the electrode layer of the organic EL display device are formed by heating the vapor deposition source provided in the lower part of the vacuum chamber of the film forming apparatus to evaporate the vapor deposition material through a mask having a pixel pattern formed in the vacuum chamber. It is formed by vapor deposition on (the lower surface of) a substrate placed on top.

このような上向蒸着方式の成膜装置の真空チャンバー内において、基板は基板ホルダによって保持されるが、基板(の下面)に形成された有機物層/電極層に損傷を与えないように基板の下面の周縁を基板ホルダの支持部によって支持する。この場合、基板のサイズが大きくなるにつれて基板ホルダの支持部によって支持されない基板の中央部が、基板の自重によって撓み、蒸着精度を落とす要因となっている。 In the vacuum chamber of such an upward vapor deposition type film forming apparatus, the substrate is held by a substrate holder. The peripheral edge of the lower surface is supported by the supporting portion of the substrate holder. In this case, as the size of the substrate increases, the central portion of the substrate that is not supported by the supporting portion of the substrate holder bends due to the weight of the substrate itself, which is a factor in lowering deposition accuracy.

基板の自重による撓みを低減するための方法として静電チャックを使う技術が検討されている。すなわち、基板の上部に静電チャックを設けて、基板ホルダの支持部によって支持された基板の上面を静電チャックにて吸着させることで、基板の中央部が静電チャックの静電引力によって引っ張られるようになり、基板の撓みを低減することができる。 A technique using an electrostatic chuck is being studied as a method for reducing the deflection of the substrate due to its own weight. That is, an electrostatic chuck is provided above the substrate, and the upper surface of the substrate supported by the supporting portion of the substrate holder is attracted by the electrostatic chuck, so that the central portion of the substrate is pulled by the electrostatic attraction force of the electrostatic chuck. and the bending of the substrate can be reduced.

ところが、基板ホルダの支持部を構成する支持部材が剛性が高い場合、基板を静電チャックに吸着させるため、支持部材によって支持された基板と静電チャックを接触させるときに、静電チャックからの加圧力によって基板が損傷する可能性がある。 However, if the support member constituting the support portion of the substrate holder has a high rigidity, the substrate is attracted to the electrostatic chuck. The substrate can be damaged by the applied pressure.

また、支持部材を複数設置する場合、各支持部材の製造誤差によって高さが一定でないことがあり、この場合、支持部材によって基板が安定的に支持されない問題が生じることがあり、静電チャックに基板が平らに吸着されない恐れがある。 Also, when a plurality of supporting members are installed, the height of each supporting member may not be constant due to manufacturing errors. In this case, the substrate may not be stably supported by the supporting members. There is a risk that the substrate will not be evenly sucked.

本発明は、基板の損傷なく基板を静電チャックにより平らな形状で吸着できる成膜装置、成膜方法及びこのような成膜方法を用いて電子デバイスを製造する方法を提供することを目的とする。 SUMMARY OF THE INVENTION It is an object of the present invention to provide a film forming apparatus, a film forming method, and a method of manufacturing an electronic device using such a film forming method, which can hold a substrate in a flat shape by an electrostatic chuck without damaging the substrate. do.

本発明の第1態様による成膜装置は、基板の周縁部を支持するための支持部を含む基板保持ユニットと、前記支持部の上方に設けられ、基板を吸着するための静電チャックとを含み、前記支持部は、第1方向に設置される第1支持部材及び前記第1支持部材と対向するように前記第1方向に設置される第2支持部材とを含み、前記第1支持部材及び前記第
2支持部材は、それぞれその基板支持面が基板を支持する方向に変位が可能である。
A film forming apparatus according to a first aspect of the present invention includes a substrate holding unit including a support for supporting a peripheral edge of a substrate, and an electrostatic chuck provided above the support for attracting the substrate. wherein the support includes a first support member installed in a first direction and a second support member installed in the first direction to face the first support member; and the second support member can be displaced in a direction in which the substrate support surface thereof supports the substrate.

本発明の第2態様による成膜方法は、本発明の第1態様による成膜装置内に基板を搬入して基板保持ユニットの支持部に基板を置く工程と、静電チャックにて、前記基板保持ユニットの前記支持部上に置かれた基板の上面を吸着する工程と、マスクを介して基板に蒸着材料を堆積させる成膜工程とを含む。 A film forming method according to a second aspect of the present invention comprises the steps of loading a substrate into the film forming apparatus according to the first aspect of the present invention and placing the substrate on a supporting portion of a substrate holding unit; The method includes a step of sucking the upper surface of the substrate placed on the support portion of the holding unit, and a film forming step of depositing a vapor deposition material on the substrate through a mask.

本発明の第3態様による有機EL表示装置の製造方法は、本発明の第2態様による成膜方法を用いて有機EL表示装置を製造する。 A method for manufacturing an organic EL display device according to the third aspect of the present invention manufactures an organic EL display device using the film forming method according to the second aspect of the present invention.

本発明によれば、基板の下面の周縁部を支持するための基板保持ユニットの支持部材が弾性体部を含むように構成されるので、基板を静電チャックに吸着するために、基板保持ユニットの支持部材によって支持された基板を静電チャックに当接させる際に、基板が静電チャックからの加圧力を受けても、支持部材の弾性体部が弾性変形され、その加圧力を吸収できるようになる。これにより、基板が静電チャックからの加圧力によって損傷されることを防止することができる。また、複数の支持部材の基板支持面の高さが一定でない場合でも、支持部材の弾性体部が基板支持面の高さのばらつきを吸収することができ、基板を安定的で平らに支持することができる。 According to the present invention, the support member of the substrate holding unit for supporting the peripheral portion of the lower surface of the substrate is configured to include the elastic body portion. When the substrate supported by the supporting member is brought into contact with the electrostatic chuck, even if the substrate receives pressure from the electrostatic chuck, the elastic body portion of the supporting member is elastically deformed to absorb the pressure. become. This can prevent the substrate from being damaged by the pressure from the electrostatic chuck. In addition, even if the substrate supporting surfaces of the plurality of supporting members are not at a constant height, the elastic portion of the supporting member can absorb variations in the height of the substrate supporting surfaces, thereby stably and flatly supporting the substrate. be able to.

図1は、有機EL表示装置の製造ラインの一部の模式図である。FIG. 1 is a schematic diagram of part of a manufacturing line for an organic EL display device. 図2は、本発明の成膜装置の模式図である。FIG. 2 is a schematic diagram of the film forming apparatus of the present invention. 図3は、本発明の一実施形態による成膜装置に使われる基板保持ユニットの支持部を示す模式図である。FIG. 3 is a schematic diagram showing the supporting portion of the substrate holding unit used in the film forming apparatus according to one embodiment of the present invention. 図4は、本発明の他の実施形態による成膜装置に使われる基板保持ユニットの支持部を示す模式図である。FIG. 4 is a schematic diagram showing a supporting portion of a substrate holding unit used in a film forming apparatus according to another embodiment of the invention. 図5は、本発明の他の実施形態による基板保持ユニットの支持部の構成を示す模式図である。FIG. 5 is a schematic diagram showing the structure of the supporting portion of the substrate holding unit according to another embodiment of the present invention. 図6は、有機EL表示装置の構造を現わす模式図である。FIG. 6 is a schematic diagram showing the structure of an organic EL display device.

以下、図面を参照しつつ本発明の好適な実施形態及び実施例を説明する。ただし、以下の実施形態及び実施例は本発明の好ましい構成を例示的に示すものにすぎず、本発明の範囲はそれらの構成に限定されない。また、以下の説明における、装置のハードウェア構成及びソフトウェア構成、処理フロー、製造条件、寸法、材質、形状などは、特に特定的な記載がないかぎりは、本発明の範囲をそれらのみに限定する趣旨のものではない。 Preferred embodiments and examples of the present invention will be described below with reference to the drawings. However, the following embodiments and examples merely exemplify preferred configurations of the present invention, and the scope of the present invention is not limited to those configurations. In addition, unless otherwise specified, the scope of the present invention is limited only to the hardware configuration and software configuration of the apparatus, process flow, manufacturing conditions, dimensions, materials, shapes, etc., in the following description. It's not intended.

本発明は、基板の表面に真空蒸着によってパターンの薄膜(材料層)を形成する装置に好適に適用することができる。基板の材料としては、硝子、高分子材料のフィルム、金属などの任意の材料を選択することができ、また、蒸着材料としても、有機材料、金属性材料(金属、金属酸化物など)などの任意の材料を選択することができる。本発明の技術は、具体的には、有機電子デバイス(例えば、有機EL表示装置、薄膜太陽電池)、光学部材などの製造装置に適用可能である。その中でも、有機EL表示装置の製造装置においては、蒸着材料を蒸発させて有機EL表示素子を形成しているので、本発明の好適な適用例の一つである。 INDUSTRIAL APPLICABILITY The present invention can be suitably applied to an apparatus for forming a patterned thin film (material layer) on the surface of a substrate by vacuum deposition. Any material such as glass, polymeric film, or metal can be selected as the material for the substrate, and organic materials, metallic materials (metals, metal oxides, etc.), etc. can be used as vapor deposition materials. Any material can be selected. The technology of the present invention is specifically applicable to manufacturing apparatuses for organic electronic devices (eg, organic EL display devices, thin-film solar cells), optical members, and the like. Among them, an apparatus for manufacturing an organic EL display device forms an organic EL display element by evaporating a deposition material, and is one of the preferred application examples of the present invention.

<電子デバイス製造ライン> <Electronic device production line>

図1は、電子デバイスの製造ラインの構成の一部を模式的に示す上面図である。図1の
製造ラインは、例えば、スマートフォン用の有機EL表示装置の表示パネルの製造に用いられる。スマートフォン用の表示パネルの場合、例えば約1800mm×約1500mmのサイズの基板に有機ELの成膜を行った後、該基板をダイシングして複数の小サイズのパネルに作製される。
FIG. 1 is a top view schematically showing part of the configuration of a manufacturing line for electronic devices. The production line of FIG. 1 is used, for example, to produce display panels for organic EL display devices for smartphones. In the case of a display panel for smartphones, for example, after forming an organic EL film on a substrate having a size of about 1800 mm×about 1500 mm, the substrate is diced to produce a plurality of small-sized panels.

電子デバイスの製造ラインは、一般に、図1に示すように、複数の成膜室11、12と、搬送室13とを有する。搬送室13内には、基板10を保持し搬送する搬送ロボット14が設けられている。搬送ロボット14は、例えば、多関節アームに、基板を保持するロボットハンドが取り付けられた構造を有するロボットであり、各成膜室への基板10の搬入/搬出を行う。 A manufacturing line for electronic devices generally has a plurality of film forming chambers 11 and 12 and a transfer chamber 13, as shown in FIG. A transfer robot 14 for holding and transferring the substrate 10 is provided in the transfer chamber 13 . The transport robot 14 is, for example, a robot having a structure in which a robot hand for holding a substrate is attached to an articulated arm, and carries the substrate 10 into/out of each film forming chamber.

各成膜室11、12にはそれぞれ成膜装置(蒸着装置とも称する)が設けられている。搬送ロボット14との基板10の受け渡し、基板10とマスクの相対位置の調整(アライメント)、マスク上への基板10の固定、成膜(蒸着)などの一連の成膜プロセスは、成膜装置によって自動で行われる。 Each of the film forming chambers 11 and 12 is provided with a film forming device (also referred to as a vapor deposition device). A series of film formation processes, such as transfer of the substrate 10 to and from the transport robot 14, adjustment of the relative positions of the substrate 10 and the mask (alignment), fixing of the substrate 10 onto the mask, and film formation (evaporation), are performed by the film formation apparatus. done automatically.

以下、成膜室の成膜装置の構成について説明する。 The configuration of the film forming apparatus in the film forming chamber will be described below.

<成膜装置> <Deposition equipment>

図2は成膜装置2の構成を概略的に示す断面図である。以下の説明においては、鉛直方向をZ方向とするXYZ直交座標系を用いる。成膜時に基板10が水平面(XY平面)と平行に固定されると想定したときに、基板10の短辺に平行な方向をX方向、長辺に平行な方向をY方向とする。またZ軸周りの回転角をθで示す。 FIG. 2 is a cross-sectional view schematically showing the configuration of the film forming apparatus 2. As shown in FIG. In the following description, an XYZ orthogonal coordinate system with the vertical direction as the Z direction is used. Assuming that the substrate 10 is fixed parallel to the horizontal plane (XY plane) during film formation, the direction parallel to the short sides of the substrate 10 is the X direction, and the direction parallel to the long sides is the Y direction. Also, the angle of rotation about the Z-axis is indicated by θ.

成膜装置2は、成膜工程が行われる空間を定義する真空チャンバー20を具備する。真空チャンバー20の内部は真空雰囲気、或いは、窒素ガスなどの不活性ガス雰囲気で維持される。 The film-forming apparatus 2 comprises a vacuum chamber 20 defining a space in which the film-forming process takes place. The inside of the vacuum chamber 20 is maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen gas.

成膜装置2の真空チャンバー20内の上部には、基板を保持して搬送する基板保持ユニット21、マスクが置かれるマスク台22、基板を静電引力によって吸着させる静電チャック23、金属製のマスクに磁力を印加するためのマグネット24などが設けられ、成膜装置の真空チャンバー20内の下部には、蒸着材料が収納される蒸着源25などが設けられる。 A substrate holding unit 21 that holds and transports a substrate, a mask table 22 on which a mask is placed, an electrostatic chuck 23 that attracts the substrate by electrostatic attraction, a metallic A magnet 24 and the like for applying a magnetic force to the mask are provided, and a vapor deposition source 25 and the like containing vapor deposition material are provided in the lower part of the vacuum chamber 20 of the film forming apparatus.

基板保持ユニット21は、搬送室13の搬送ロボット14から基板10を受け取り、保持及び搬送する。基板保持ユニット21は基板ホルダとも称する。基板保持ユニット21は基板の下面の周縁部を支持する支持部211,212を含む。支持部上には基板の損傷を防止するためにフッ素コーティングされたパッド(不図示)が設けられる。本発明の支持部は、後述するところのように、基板が損傷なく静電チャックに全体的に平らに吸着されることができるように弾性体部を有する支持部材を含む。 The substrate holding unit 21 receives the substrate 10 from the transfer robot 14 in the transfer chamber 13 and holds and transfers it. The substrate holding unit 21 is also called a substrate holder. The substrate holding unit 21 includes support portions 211 and 212 that support the periphery of the bottom surface of the substrate. A fluorine-coated pad (not shown) is provided on the support to prevent damage to the substrate. The support part of the present invention includes a support member having an elastic part so that the substrate can be flatly attracted to the electrostatic chuck without being damaged, as will be described later.

基板保持ユニット21の下にはフレーム状のマスク台22が設置され、マスク台22には基板10上に形成される薄膜パターンに対応する開口パターンを有するマスク221が置かれる。特に、スマホ用の有機EL素子を製造するのに使われるマスクは、微細な開口パターンが形成された金属製のマスクであり、FMM(Fine Metal Mask)とも称する。 A frame-shaped mask table 22 is installed under the substrate holding unit 21 , and a mask 221 having an opening pattern corresponding to the thin film pattern formed on the substrate 10 is placed on the mask table 22 . In particular, a mask used to manufacture organic EL elements for smartphones is a metal mask having a fine opening pattern, and is also called FMM (Fine Metal Mask).

基板保持ユニット21の支持部211,212の上方には基板を静電引力によって吸着して固定させるための静電チャック23が設けられる。静電チャックは、セラミックス材
質のマトリックス内に金属電極などの電気回路が埋め込まれた構造を持ち、金属電極にプラス(+)及びマイナス(-)電圧が印加されると、セラミックスマトリックスを通じて基板に分極電荷が誘導され、これら間の静電気的な引力によって基板が静電チャック23に吸着固定される。静電チャックは埋め込まれた電気回路の構造によって複数のモジュールに区画されることができる。
An electrostatic chuck 23 is provided above the support portions 211 and 212 of the substrate holding unit 21 to attract and fix the substrate by electrostatic attraction. An electrostatic chuck has a structure in which an electric circuit such as a metal electrode is embedded in a ceramic matrix. When a positive (+) and negative (-) voltage is applied to the metal electrode, the substrate is polarized through the ceramic matrix. Charges are induced, and the substrate is attracted and fixed to the electrostatic chuck 23 by electrostatic attraction therebetween. The electrostatic chuck can be partitioned into multiple modules by the structure of the embedded electrical circuits.

静電チャック23の上部には、金属製のマスク221に磁力を印加してマスクの撓みを防止し、マスク221と基板10を密着させるためのマグネット24が設けられる。マグネット24は永久磁石または電磁石からなることができ、複数のモジュールに区画されることができる。 A magnet 24 is provided above the electrostatic chuck 23 to apply a magnetic force to the metal mask 221 to prevent the mask from bending and bring the mask 221 and the substrate 10 into close contact with each other. The magnet 24 can be a permanent magnet or an electromagnet and can be partitioned into multiple modules.

図2には図示されていないが、静電チャック23とマグネット24の間には基板を冷却するための冷却板が設けられる。冷却板はマグネット24と一体に形成されてもよい。 Although not shown in FIG. 2, a cooling plate is provided between the electrostatic chuck 23 and the magnet 24 for cooling the substrate. The cooling plate may be formed integrally with the magnet 24 .

蒸着源25は、基板に成膜される蒸着材料が収納されるるつぼ(不図示)、るつぼを加熱するためのヒータ(不図示)、蒸着源からの蒸発レートが一定になるまで蒸着材料が基板に飛散することを阻むシャッタ(不図示)などを含む。蒸着源25は、点(point)蒸着源、線形(linear)蒸着源、リボルバ蒸着源など用途によって多様な構成を持つことができる。 The vapor deposition source 25 includes a crucible (not shown) in which the vapor deposition material to be deposited on the substrate is stored, a heater (not shown) for heating the crucible, and the vapor deposition material until the evaporation rate from the vapor deposition source becomes constant. It includes a shutter (not shown) and the like that prevent scattering. The deposition source 25 may have various configurations according to its use, such as a point deposition source, a linear deposition source, a revolver deposition source, and the like.

図2には図示されていないが、成膜装置2は基板に蒸着された膜の厚さを測定するための膜厚モニタ(不図示)及び膜厚算出ユニット(不図示)を含む。 Although not shown in FIG. 2, the film forming apparatus 2 includes a film thickness monitor (not shown) and a film thickness calculation unit (not shown) for measuring the thickness of the film deposited on the substrate.

成膜装置2の真空チャンバー20の外部上面には基板保持ユニット21、静電チャック23、マグネット24などを鉛直方向(Z方向)に移動させるための駆動機構、及び基板とマスクのアラインメントのために水平面に平行に(X方向、Y方向、θ方向で)静電チャック23や基板保持ユニット21などを移動させるための駆動機構などが設けられる。また、マスクと基板のアラインメントのために真空チャンバー20の天井に設けられた窓を通じて基板及びマスクに形成されたアラインメントマークを撮影するアラインメント用カメラ(不図示)も設けられる。 A drive mechanism for moving a substrate holding unit 21, an electrostatic chuck 23, a magnet 24, etc. in the vertical direction (Z direction), and for alignment of the substrate and the mask are provided on the outer upper surface of the vacuum chamber 20 of the film forming apparatus 2. A drive mechanism and the like are provided for moving the electrostatic chuck 23, the substrate holding unit 21, and the like parallel to the horizontal plane (in the X direction, Y direction, and θ direction). Also, an alignment camera (not shown) is provided for photographing alignment marks formed on the substrate and the mask through a window provided in the ceiling of the vacuum chamber 20 for aligning the mask and the substrate.

本発明の成膜装置による成膜プロセスを説明する。搬送室13の搬送ロボット14によって基板が真空チャンバー20内に搬入されて基板保持ユニット21に置かれる。続いて、基板保持ユニット21に置かれた基板10とマスク台22に置かれているマスク221との相対的位置の測定及び調整を行うアラインメント工程が行われる。アラインメント工程が完了すると、基板保持ユニット21が駆動機構によって降りて基板10をマスク221上に置き、その後マグネット24が降りて基板10とマスク221を密着させる。このようなアラインメント工程、基板をマスク上に置くための下降工程、マグネットによる基板とマスクの密着工程などにおいて、基板は基板保持ユニット21の支持部211,212と静電チャック23によって固定される。 A film forming process by the film forming apparatus of the present invention will be described. A substrate is carried into the vacuum chamber 20 by the transfer robot 14 in the transfer chamber 13 and placed on the substrate holding unit 21 . Subsequently, an alignment process is performed to measure and adjust the relative positions of the substrate 10 placed on the substrate holding unit 21 and the mask 221 placed on the mask table 22 . When the alignment process is completed, the substrate holding unit 21 is lowered by the drive mechanism to place the substrate 10 on the mask 221, and then the magnet 24 is lowered to bring the substrate 10 and the mask 221 into close contact. The substrate is fixed by the support portions 211 and 212 of the substrate holding unit 21 and the electrostatic chuck 23 in such an alignment process, a lowering process for placing the substrate on the mask, and a process of bringing the substrate and the mask into close contact with each other using a magnet.

この状態で、蒸着源25のシャッタが開かれて、蒸着源25のるつぼから蒸発された蒸着材料がマスクの微細パターン開口を通して基板に蒸着される。 In this state, the shutter of the deposition source 25 is opened, and the deposition material evaporated from the crucible of the deposition source 25 is deposited on the substrate through the fine pattern openings of the mask.

基板に蒸着された蒸着材料の膜厚が所定の厚さに到逹すると、蒸着源25のシャッタが閉じ、その後、搬送ロボット14が基板を真空チャンバー20から搬送室13に搬出される。 When the film thickness of the deposition material deposited on the substrate reaches a predetermined thickness, the shutter of the deposition source 25 is closed, and then the transfer robot 14 transfers the substrate from the vacuum chamber 20 to the transfer chamber 13 .

<基板保持ユニットの支持部> <Support portion of substrate holding unit>

以下、図3を参照して基板保持ユニット21の構成、特に、静電チャックとともに基板を保持する支持部211、212の構成を説明する。 Hereinafter, the configuration of the substrate holding unit 21, in particular, the configuration of the supports 211 and 212 that hold the substrate together with the electrostatic chuck will be described with reference to FIG.

基板保持ユニット21は、支持部211、212によって基板10の周縁部を保持して搬送する。図3に図示した本発明の実施形態において、支持部211、212は基板の対向する二つの辺(例えば、二つの長辺)側の周縁部を支持するように設けられる。 The substrate holding unit 21 holds the peripheral portion of the substrate 10 by the supporting portions 211 and 212 and conveys the substrate 10 . In the embodiment of the present invention illustrated in FIG. 3, the supports 211 and 212 are provided to support the peripheral edges of two opposite sides (eg, two long sides) of the substrate.

すなわち、基板保持ユニット21の支持部211、212は、基板の対向する二つの辺中いずれかの一つの辺(第1辺)に沿って設けられる複数の第1支持部材211ともう一つの辺(第2辺)に沿って設けられる複数の第2支持部材212を含む。例えば、複数の第1支持部材211は基板の長辺方向(Y方向、第1方向)に沿って設けられ、複数の第2支持部材212は複数の第1支持部材211と対向するように基板の長辺方向(Y方向、第1方向)に設置される。図3には第1支持部材211及び第2支持部材212がそれぞれ複数の支持部材からなる構成を図示したが、本発明はこれに限定されず、第1支持部材211及び/または第2支持部材212はそれぞれ第1方向に長く延びる一つの支持部材で構成されてもよい。また、図3には、第1支持部材211及び第2支持部材212が基板の長辺に沿って設けられることと示されたが、本発明はこれに限定されず、第1支持部材211及び第2支持部材212が基板の対向する短辺に沿って設けられてもよい。 That is, the support portions 211 and 212 of the substrate holding unit 21 are composed of a plurality of first support members 211 provided along one side (first side) of the two opposing sides of the substrate and the other side. It includes a plurality of second support members 212 provided along the (second side). For example, the plurality of first support members 211 are provided along the long side direction (Y direction, first direction) of the substrate, and the plurality of second support members 212 face the plurality of first support members 211 . is installed in the long side direction (Y direction, first direction) of the . Although FIG. 3 illustrates that the first support member 211 and the second support member 212 each include a plurality of support members, the present invention is not limited to this, and the first support member 211 and/or the second support member 212 may each comprise one support member elongated in the first direction. In addition, although FIG. 3 shows that the first support member 211 and the second support member 212 are provided along the long side of the substrate, the present invention is not limited thereto, and the first support member 211 and the second support member 212 are arranged along the long side of the substrate. Second support members 212 may be provided along opposite short sides of the substrate.

基板の下面の周縁部を支持する支持部211、212は、その基板支持面が基板保持ユニット21に対して鉛直方向(Z方向)に(すなわち、基板を支持する方向に)移動可能に設置される。すなわち、支持部211、212はその高さが変わり得る。 The support portions 211 and 212 that support the peripheral portion of the lower surface of the substrate are installed so that the substrate support surface can move in the vertical direction (Z direction) with respect to the substrate holding unit 21 (that is, in the direction in which the substrate is supported). be. That is, the supports 211 and 212 can vary in height.

このため、本発明の基板保持ユニット21の支持部は弾性体を含んで構成される。例えば、図3(a)に図示したように、支持部の複数の支持部材211、212それぞれは基板支持面部30と弾性体部31を含む。基板支持面部30は基板の下面の周縁部を支持し、弾性体部31は基板支持面部30を弾性的に変位可能に支持する。 For this reason, the supporting portion of the substrate holding unit 21 of the present invention is configured including an elastic body. For example, as shown in FIG. 3( a ), each of the plurality of support members 211 and 212 of the support includes a substrate support surface portion 30 and an elastic body portion 31 . The substrate supporting surface portion 30 supports the peripheral portion of the lower surface of the substrate, and the elastic body portion 31 supports the substrate supporting surface portion 30 so as to be elastically displaceable.

弾性体部31に使われる弾性体としてはコイルスプリング、板スプリング、シリコーンゴムなどを用いることができるが、本発明はこれに限定されず、支持部材の基板支持面部を弾性的に変位可能に支持することができる限り、他の構成を含むことができる。 As the elastic body used for the elastic body part 31, a coil spring, a plate spring, silicone rubber, or the like can be used, but the present invention is not limited to this, and the substrate support surface part of the support member is elastically displaceable. Other configurations can be included as long as they are possible.

本実施形態においては、支持部材が弾性体部31を含むように構成することで、基板支持面部30によって支持された基板が静電チャック23から加圧力を受けるとき、弾性体部31が弾性変位(例えば、圧縮変位または引張変位)するため、静電チャック23からの加圧力を吸収して基板が破損することを防止することができる。また、各支持部材が製造誤差によって基板支持面部30の高さが一定でなくても、全体的な支持部の機能に及ぼす影響を弾性体部31の弾性変位によって低減することができる。 In this embodiment, the support member is configured to include the elastic body portion 31 , so that when the substrate supported by the substrate support surface portion 30 receives pressure from the electrostatic chuck 23 , the elastic body portion 31 is elastically displaced. (eg, compressive displacement or tensile displacement), it is possible to prevent the substrate from being damaged by absorbing the pressure from the electrostatic chuck 23 . In addition, even if the height of the substrate support surface portion 30 is not constant due to manufacturing errors in each support member, the effect on the overall function of the support portion can be reduced by the elastic displacement of the elastic body portion 31 .

本発明において、複数の支持部材211、212中、基板のある一辺(第1辺)に沿った周縁部に対応する位置に設置される第1支持部材211は、他の支持部材に比べて基板支持面部30の高さが高い。例えば、図4(a)に図示したように、第1支持部材211の弾性体部31の長さは第2支持部材212の弾性体部31の長さより長い。 In the present invention, among the plurality of supporting members 211 and 212, the first supporting member 211, which is installed at a position corresponding to the peripheral edge along one side (first side) of the substrate, is more likely to support the substrate than the other supporting members. The height of the support surface portion 30 is high. For example, as shown in FIG. 4A, the length of the elastic portion 31 of the first support member 211 is longer than the length of the elastic portion 31 of the second support member 212 .

このような構成によって、基板保持ユニット21の支持部に基板が置かれた状態で、基板保持ユニット21の上昇または静電チャック23の下降によって基板10が静電チャック23と接触する際、基板支持面部30の高さが高い第1支持部材211によって支持される基板の第1辺側の周縁部が静電チャック23の下面と先に接触して吸着される。 With such a configuration, when the substrate is placed on the supporting portion of the substrate holding unit 21 and the substrate 10 comes into contact with the electrostatic chuck 23 by raising the substrate holding unit 21 or lowering the electrostatic chuck 23, the substrate is not supported. The peripheral edge portion of the first side of the substrate supported by the first support member 211 having the high surface portion 30 comes into contact with the lower surface of the electrostatic chuck 23 first and is attracted.

そして、静電チャック23と基板10との間の距離がさらに縮むと、例えば、第1支持
部材211の弾性体部31は静電チャック23からの加圧力によって弾性的に圧縮され、これによって第1支持部材211の基板支持面部30は変位、すなわち、下方に下がるようになる。第1支持部材211の弾性体部31が弾性的に圧縮されるにつれて、第1支持部材211の基板支持面部30の高さと第2支持部材212の基板支持面部30の高さとの差が小さくなりながら、基板の第1辺側周縁部から基板の中央部に向かって基板の静電チャック23への吸着が進む。静電チャック23と基板10の間の距離がさらに縮むと、基板の中央部から基板の第2辺側の周縁部に向かって基板の吸着が進む。
Then, when the distance between the electrostatic chuck 23 and the substrate 10 is further reduced, for example, the elastic body portion 31 of the first support member 211 is elastically compressed by the pressure from the electrostatic chuck 23, thereby The substrate support surface portion 30 of the 1 support member 211 is displaced, that is, lowered downward. As the elastic body portion 31 of the first support member 211 is elastically compressed, the height difference between the substrate support surface portion 30 of the first support member 211 and the substrate support surface portion 30 of the second support member 212 becomes smaller. Meanwhile, the adsorption of the substrate to the electrostatic chuck 23 progresses from the peripheral portion on the first side of the substrate toward the central portion of the substrate. When the distance between the electrostatic chuck 23 and the substrate 10 is further reduced, the adsorption of the substrate progresses from the central portion of the substrate toward the peripheral portion on the second side of the substrate.

静電チャック23が第2支持部材212の基板支持面部30の高さまで近接すると、第2支持部材212によって支持される基板の第2辺側の周縁部が静電チャック23に吸着されて、このとき、第1支持部材211の基板支持面部30の高さが第2支持部材212の基板支持面部30の高さと同じくなり、全体的に基板は静電チャック23に平らな状態で吸着されるようになる。 When the electrostatic chuck 23 approaches the substrate support surface portion 30 of the second support member 212, the peripheral portion of the second side of the substrate supported by the second support member 212 is attracted to the electrostatic chuck 23, and this At this time, the height of the substrate supporting surface portion 30 of the first supporting member 211 is the same as the height of the substrate supporting surface portion 30 of the second supporting member 212 so that the substrate is attracted to the electrostatic chuck 23 in a flat state as a whole. become.

図4(a)には支持部材の基板支持面部30の変位軸と弾性体部31の変位軸が一致するように図示したが、本発明はこれに限定されず、基板支持面部30の変位軸と弾性体部31の変位軸とが互いに異なるように形成されることもできる。すなわち、図4(d)に図示したように、基板支持面部30の変位軸と弾性体部31の変位軸とが基板面に平行な方向において互いに離隔されるように(すなわち、ずれるように)構成されることもできる(すなわち、両変位軸が互いに平行になるように形成されることができる)。このような構成において、基板保持ユニット21の支持部材は基板支持面部30の変位をガイドするガイド部32をさらに含むことができる。弾性体部31は図4(d)に図示したように、基板が静電チャック23と接触するによって圧縮変位する構成だけではなく引張変位するように構成されることもできる。 Although FIG. 4A shows that the displacement axis of the substrate support surface portion 30 of the support member and the displacement axis of the elastic body portion 31 are aligned, the present invention is not limited to this, and the displacement axis of the substrate support surface portion 30 is illustrated. and the displacement axis of the elastic body part 31 may be formed to be different from each other. That is, as shown in FIG. 4D, the displacement axis of the substrate supporting surface portion 30 and the displacement axis of the elastic body portion 31 are separated from each other in the direction parallel to the substrate surface (that is, shifted). can also be configured (ie both displacement axes can be formed parallel to each other). In such a configuration, the support member of the substrate holding unit 21 may further include a guide portion 32 that guides displacement of the substrate support surface portion 30 . As shown in FIG. 4(d), the elastic member 31 can be configured not only to be compressed and displaced when the substrate comes into contact with the electrostatic chuck 23, but also to be made to undergo tensile displacement.

本発明の基板保持ユニット21の支持部は、複数の支持部材211、212が基板を支持する支持力が支持部材によって変わるように設定されてもよい。すなわち、基板保持ユニット21の支持部は、基板の対向する二つの辺の中でどの一つの辺である第1辺側を支持する第1支持部材211が基板を支持する支持力と他の一つの辺である第2辺側を支持する第2支持部材212が基板を支持する支持力が互いに異なるように設置される。例えば、第1支持部材211が基板を支持する支持力は、第2支持部材212が基板を支持する支持力より大きくなるように設定される。 The support portion of the substrate holding unit 21 of the present invention may be set such that the support force with which the plurality of support members 211 and 212 support the substrate varies depending on the support members. That is, the supporting portion of the substrate holding unit 21 has a supporting force with which the substrate is supported by the first supporting member 211 which supports the first side, which is one of the two opposing sides of the substrate, and the other one. The second support members 212 that support the second side, which is one side, are installed so that the support force for supporting the substrate is different from each other. For example, the supporting force with which the first supporting member 211 supports the substrate is set to be greater than the supporting force with which the second supporting member 212 supports the substrate.

このため、図4に図示したように、第1支持部材211の弾性体部31の弾性係数を第2支持部材212の弾性体部31の弾性係数より大きくするか、第1支持部材211の弾性体部31の長さを第2支持部材212の弾性体部31の長さより長くする。第1支持部材211の弾性体部31の長さが長くなると第1支持部材211の弾性体部31が静電チャック23からの加圧力によって弾性変位(引張変位または圧縮変位)される距離が第2支持部材212の弾性体部31が弾性変位される距離より長くなるので、結果的に第1支持部材211が基板を支持する支持力を第2支持部材212が基板を支持する支持力より大きくすることができる。 For this reason, as shown in FIG. 4, the elastic modulus of the elastic portion 31 of the first support member 211 is made larger than that of the elastic portion 31 of the second support member 212, or the elasticity of the first support member 211 is increased. The length of the body portion 31 is made longer than the length of the elastic body portion 31 of the second support member 212 . As the length of the elastic body portion 31 of the first support member 211 increases, the distance over which the elastic body portion 31 of the first support member 211 is elastically displaced (tensile displacement or compression displacement) by the pressure from the electrostatic chuck 23 is the first. Since the elastic body portion 31 of the second support member 212 is longer than the elastically displaced distance, as a result, the support force of the first support member 211 to support the substrate becomes larger than the support force of the second support member 212 to support the substrate. can do.

このように第1支持部材211の支持力を第2支持部材212の支持力より大きくすることで、基板中央部の撓みを支持力が小さな第2支持部材212側の方に伸ばすことができるので、基板が全体的に静電チャック23に平らに吸着されることが可能になる。 By making the supporting force of the first supporting member 211 larger than the supporting force of the second supporting member 212 in this manner, the bending of the central portion of the substrate can be extended toward the second supporting member 212 having a smaller supporting force. , the substrate can be flatly attracted to the electrostatic chuck 23 as a whole.

本発明では第1支持部材211の支持力が第2支持部材212の支持力より大きくなる限り、弾性体部の弾性係数と長さは様々に組み合わせるができる。 In the present invention, as long as the supporting force of the first supporting member 211 is greater than the supporting force of the second supporting member 212, the elastic modulus and length of the elastic body can be variously combined.

例えば、図4(a)に図示したように、第1支持部材211の弾性体部31の弾性係数
及び長さを、第2支持部材212の弾性体部31の弾性係数及び長さより、大きく及び長くすることができ、図4(b)に図示したように、第1支持部材211の弾性体部31の弾性係数と第2支持部材212の弾性体部31の弾性係数は同じであるが、第1支持部材211の弾性体部31の長さを、第2支持部材212の弾性体部31の長さより長くすることもできる。また、図4(c)に図示したように、第1支持部材211と第2支持部材212の弾性体部の長さが同じでも、弾性係数を互いに異なるようにすることで支持力の差を付与することもできる。
For example, as shown in FIG. 4A, the elastic modulus and length of the elastic portion 31 of the first support member 211 may be greater than the elastic modulus and length of the elastic portion 31 of the second support member 212. 4(b), the elastic modulus of the elastic portion 31 of the first support member 211 and the elastic portion 31 of the second support member 212 are the same, The length of the elastic portion 31 of the first support member 211 may be longer than the length of the elastic portion 31 of the second support member 212 . Further, as shown in FIG. 4C, even if the lengths of the elastic portions of the first support member 211 and the second support member 212 are the same, the difference in the supporting force can be reduced by making the elastic coefficients different from each other. can also be granted.

本発明の基板保持ユニット21の支持部は、図5に図示したように、基板の第1辺側の周縁部を支持するように配置される複数の第1支持部材211、第1辺と対向する第2辺側の基板周縁部を支持するように配置される複数の第2支持部材212以外に、第1辺と第2辺とを繋ぐ第3辺側及び第4辺側の基板周縁部を支持するように配置される複数の第3支持部材213及び複数の第4支持部材214を含むことができる。第3支持部材213及び第4支持部材214も基板支持面部30と弾性体部31を含む。この際、第3支持部材213及び第4支持部材214の弾性体部31の弾性係数及び長さは、第3支持部材213及び第4支持部材214が基板の第3辺側の周縁部及び第4辺側の周縁部を支持する支持力が第1支持部材211の支持力より小さくなるように設定するのが望ましい。より望ましくは、第3支持部材213及び第4支持部材214による支持力が第2支持部材212による支持力より大きくなるように弾性係数及び/または長さを設定する。このように、支持部材の支持力を調節することで、基板10が静電チャック23に吸着されるときに、第1辺(例えば、対向する二つの長辺の中である一長辺)側の基板周縁部から基板の中央部を経て第2辺(例えば、対向する二つの長辺の中で他の一つの長辺)側に向かって吸着を順次に進めることができ、基板が平らに静電チャックに吸着されることが可能になる。 As shown in FIG. 5, the supporting portion of the substrate holding unit 21 of the present invention includes a plurality of first supporting members 211 arranged to support the peripheral edge portion of the substrate on the first side side, facing the first side. In addition to the plurality of second supporting members 212 arranged to support the substrate peripheral edge portion on the second side side where the first side and the second side are connected, the substrate peripheral edge portions on the third side and the fourth side connecting the first side and the second side. can include a plurality of third support members 213 and a plurality of fourth support members 214 arranged to support the . The third support member 213 and the fourth support member 214 also include a substrate support surface portion 30 and an elastic body portion 31 . At this time, the elastic modulus and the length of the elastic body portion 31 of the third support member 213 and the fourth support member 214 are determined such that the third support member 213 and the fourth support member 214 are located at the peripheral edge portion on the third side of the substrate and at the third edge portion of the substrate. It is desirable to set the support force for supporting the peripheral edge portions on the four sides to be smaller than the support force of the first support member 211 . More preferably, the elastic modulus and/or length are set such that the supporting force of the third supporting member 213 and the fourth supporting member 214 is greater than the supporting force of the second supporting member 212 . By adjusting the supporting force of the supporting member in this way, when the substrate 10 is attracted to the electrostatic chuck 23, the first side (for example, one of the two opposing long sides) side From the peripheral edge of the substrate to the central portion of the substrate toward the second side (for example, the other one of the two long sides facing each other), the substrate is flattened. It becomes possible to be attracted to the electrostatic chuck.

<電子デバイスの製造方法> <Method for manufacturing electronic device>

次に、本実施形態の成膜装置を用いた電子デバイスの製造方法の一例を説明する。以下、電子デバイスの例として有機EL表示装置の構成及び製造方法を例示する。 Next, an example of a method for manufacturing an electronic device using the film forming apparatus of this embodiment will be described. The configuration and manufacturing method of an organic EL display device will be exemplified below as an example of an electronic device.

まず、製造する有機EL表示装置について説明する。図6(a)は有機EL表示装置60の全体図、図6(b)は1画素の断面構造を示す。 First, the organic EL display device to be manufactured will be described. FIG. 6(a) is an overall view of an organic EL display device 60, and FIG. 6(b) shows a cross-sectional structure of one pixel.

図6(a)に示すように、有機EL表示装置60の表示領域61には、発光素子を複数備える画素62がマトリクス状に複数配置されている。詳細は後で説明するが、発光素子のそれぞれは、一対の電極に挟まれた有機層を備える構造を有している。なお、ここでいう画素とは、表示領域61において所望の色の表示を可能とする最小単位を指す。本実施例にかかる有機EL表示装置の場合、互いに異なる発光を示す第1発光素子62R、第2発光素子62G、第3発光素子62Bの組み合わせにより画素62が構成されている。画素62は、赤色発光素子と緑色発光素子と青色発光素子の組み合わせで構成されることが多いが、黄色発光素子とシアン発光素子と白色発光素子の組み合わせでもよく、少なくとも1色以上であれば特に制限されるものではない。 As shown in FIG. 6A, in a display area 61 of an organic EL display device 60, a plurality of pixels 62 each having a plurality of light emitting elements are arranged in a matrix. Although details will be described later, each of the light emitting elements has a structure including an organic layer sandwiched between a pair of electrodes. Note that the pixel here refers to a minimum unit that enables display of a desired color in the display area 61 . In the case of the organic EL display device according to this embodiment, the pixel 62 is configured by a combination of the first light emitting element 62R, the second light emitting element 62G, and the third light emitting element 62B that emit light different from each other. The pixel 62 is often composed of a combination of a red light emitting element, a green light emitting element and a blue light emitting element, but may be a combination of a yellow light emitting element, a cyan light emitting element and a white light emitting element. It is not limited.

図6(b)は、図6(a)のA-B線における部分断面模式図である。画素62は、基板63上に、第1電極(陽極)64と、正孔輸送層65と、発光層66R、66G、66Bのいずれかと、電子輸送層67と、第2電極(陰極)68と、を備える有機EL素子を有している。これらのうち、正孔輸送層65、発光層66R、66G、66B、電子輸送層67が有機層に当たる。また、本実施形態では、発光層66Rは赤色を発する有機EL層、発光層66Gは緑色を発する有機EL層、発光層66Bは青色を発する有機EL層である。発光層66R、66G、66Bは、それぞれ赤色、緑色、青色を発する発光素子(
有機EL素子と記述する場合もある)に対応するパターンに形成されている。また、第1電極64は、発光素子ごとに分離して形成されている。正孔輸送層65と電子輸送層67と第2電極68は、複数の発光素子62R、62G、62Bと共通で形成されていてもよいし、発光素子毎に形成されていてもよい。なお、第1電極64と第2電極68とが異物によってショートするのを防ぐために、第1電極64間に絶縁層69が設けられている。さらに、有機EL層は水分や酸素によって劣化するため、水分や酸素から有機EL素子を保護するための保護層70が設けられている。
FIG. 6(b) is a schematic partial cross-sectional view taken along line AB in FIG. 6(a). The pixel 62 includes a first electrode (anode) 64, a hole transport layer 65, any one of the light emitting layers 66R, 66G, and 66B, an electron transport layer 67, and a second electrode (cathode) 68 on a substrate 63. and an organic EL element. Among these layers, the hole transport layer 65, the light emitting layers 66R, 66G and 66B, and the electron transport layer 67 correspond to organic layers. In this embodiment, the light emitting layer 66R is an organic EL layer that emits red, the light emitting layer 66G is an organic EL layer that emits green, and the light emitting layer 66B is an organic EL layer that emits blue. The light-emitting layers 66R, 66G, and 66B are light-emitting elements (
It is formed in a pattern corresponding to an organic EL element). Also, the first electrode 64 is formed separately for each light emitting element. The hole transport layer 65, the electron transport layer 67, and the second electrode 68 may be formed in common with the plurality of light emitting elements 62R, 62G, and 62B, or may be formed for each light emitting element. An insulating layer 69 is provided between the first electrodes 64 to prevent short-circuiting between the first electrodes 64 and the second electrodes 68 due to foreign matter. Furthermore, since the organic EL layer is deteriorated by moisture and oxygen, a protective layer 70 is provided to protect the organic EL element from moisture and oxygen.

図6(b)では正孔輸送層65や電子輸送層67が一つの層で示されているが、有機EL表示素子の構造によって、正孔ブロック層や電子ブロック層を含む複数の層で形成されてもよい。また、第1電極64と正孔輸送層65との間には第1電極64から正孔輸送層65への正孔の注入が円滑に行われるようにすることのできるエネルギーバンド構造を有する正孔注入層を形成することもできる。同様に、第2電極68と電子輸送層67の間にも電子注入層が形成されてもよい。 In FIG. 6B, the hole transport layer 65 and the electron transport layer 67 are shown as one layer, but depending on the structure of the organic EL display element, they may be formed of multiple layers including a hole blocking layer and an electron blocking layer. may be In addition, a positive electrode having an energy band structure capable of smoothly injecting holes from the first electrode 64 to the hole transport layer 65 is provided between the first electrode 64 and the hole transport layer 65 . A hole injection layer can also be formed. Similarly, an electron injection layer may be formed between the second electrode 68 and the electron transport layer 67 as well.

次に、有機EL表示装置の製造方法の例について具体的に説明する。 Next, an example of a method for manufacturing an organic EL display device will be specifically described.

まず、有機EL表示装置を駆動するための回路(不図示)および第1電極64が形成された基板63を準備する。 First, a substrate 63 on which a circuit (not shown) for driving the organic EL display device and a first electrode 64 are formed is prepared.

第1電極64が形成された基板63の上にアクリル樹脂をスピンコートで形成し、アクリル樹脂をリソグラフィ法により、第1電極64が形成された部分に開口が形成されるようにパターニングし絶縁層69を形成する。この開口部が、発光素子が実際に発光する発光領域に相当する。 An acrylic resin is formed by spin coating on the substrate 63 on which the first electrode 64 is formed, and the acrylic resin is patterned by lithography so that an opening is formed in the portion where the first electrode 64 is formed, thereby forming an insulating layer. form 69. This opening corresponds to a light emitting region where the light emitting element actually emits light.

絶縁層69がパターニングされた基板63を第1の有機材料成膜装置に搬入し、基板保持ユニット及び静電チャックにて基板を保持し、正孔輸送層65を、表示領域の第1電極64の上に共通する層として成膜する。正孔輸送層65は真空蒸着により成膜される。実際には正孔輸送層65は表示領域61よりも大きなサイズに形成されるため、高精細なマスクは不要である。 A substrate 63 having an insulating layer 69 patterned thereon is carried into a first organic material deposition apparatus, and the substrate is held by a substrate holding unit and an electrostatic chuck. is deposited as a common layer on the The hole transport layer 65 is deposited by vacuum deposition. Since the hole transport layer 65 is actually formed to have a size larger than that of the display area 61, a high-definition mask is not required.

次に、正孔輸送層65までが形成された基板63を第2の有機材料成膜装置に搬入し、基板保持ユニット及び静電チャックにて保持する。基板とマスクとのアライメントを行い、基板をマスクの上に載置し、基板63の赤色を発する素子を配置する部分に、赤色を発する発光層66Rを成膜する。 Next, the substrate 63 on which the hole transport layer 65 is formed is carried into the second organic material deposition apparatus and held by the substrate holding unit and the electrostatic chuck. The substrate and the mask are aligned, the substrate is placed on the mask, and a light-emitting layer 66R emitting red is formed on a portion of the substrate 63 where the element emitting red is to be arranged.

発光層66Rの成膜と同様に、第3の有機材料成膜装置により緑色を発する発光層66Gを成膜し、さらに第4の有機材料成膜装置により青色を発する発光層66Bを成膜する。発光層66R、66G、66Bの成膜が完了した後、第5の成膜装置により表示領域61の全体に電子輸送層67を成膜する。電子輸送層67は、3色の発光層66R、66G、66Bに共通の層として形成される。 Similarly to the deposition of the light-emitting layer 66R, the third organic material deposition apparatus is used to deposit a green-emitting light-emitting layer 66G, and the fourth organic material deposition apparatus is used to deposit a blue-emitting light-emitting layer 66B. . After the formation of the light-emitting layers 66R, 66G, and 66B is completed, the electron transport layer 67 is formed over the entire display area 61 by the fifth film forming apparatus. The electron transport layer 67 is formed as a layer common to the three color light-emitting layers 66R, 66G, and 66B.

電子輸送層67まで形成された基板を金属性蒸着材料成膜装置で移動させて第2電極68を成膜する。 The substrate on which the electron transport layer 67 has been formed is moved by a metallic evaporation material film-forming apparatus to form the second electrode 68 as a film.

本発明によれば、有機EL表示素子の製造のために、多様な有機材料及び金属性材料を基板上に蒸着する際に、基板を支持する基板保持ユニットの支持部211、212、213、214の支持部材が弾性体部31を有するので、基板保持ユニットの支持部によって支持された基板が静電チャックに吸着されるときに、基板への損傷なく平らに吸着され、蒸着工程全般的にその精度を向上させることができる。 According to the present invention, support portions 211, 212, 213, and 214 of a substrate holding unit for supporting a substrate when various organic materials and metallic materials are deposited on the substrate for manufacturing an organic EL display device. Since the support member of has the elastic body part 31, when the substrate supported by the support part of the substrate holding unit is attracted to the electrostatic chuck, the substrate is flatly attracted without being damaged. Accuracy can be improved.

その後プラズマCVD装置に移動して保護層70を成膜して、有機EL表示装置60が完成する。 After that, the substrate is moved to a plasma CVD apparatus to form a protective layer 70, and the organic EL display device 60 is completed.

絶縁層69がパターニングされた基板63を成膜装置に搬入してから保護層70の成膜が完了するまでは、水分や酸素を含む雰囲気にさらしてしまうと、有機EL材料からなる発光層が水分や酸素によって劣化してしまうおそれがある。したがって、本例において、成膜装置間の基板の搬入搬出は、真空雰囲気または不活性ガス雰囲気の下で行われる。 If the substrate 63 on which the insulating layer 69 is patterned is carried into the film forming apparatus and is exposed to an atmosphere containing moisture and oxygen until the film formation of the protective layer 70 is completed, the light emitting layer made of the organic EL material will be damaged. It may deteriorate due to moisture and oxygen. Therefore, in this example, substrates are carried in and out between film forming apparatuses under a vacuum atmosphere or an inert gas atmosphere.

上記実施例は本発明の一例を示し、本発明は上記実施例の構成に限定されず、また、その技術思想の範囲内で適切に変形されてよい。 The above embodiment shows an example of the present invention, and the present invention is not limited to the configuration of the above embodiment, and may be appropriately modified within the scope of its technical concept.

21:基板保持ユニット
22:マスク台
23:静電チャック
24:マグネット
30:基板支持面部
31:弾性体部
32:ガイド部
211:第1支持部材
212:第2支持部材
213:第3支持部材
214:第4支持部材
21: Substrate holding unit 22: Mask stand 23: Electrostatic chuck 24: Magnet 30: Substrate support surface portion 31: Elastic body portion 32: Guide portion 211: First support member 212: Second support member 213: Third support member 214 : Fourth support member

Claims (13)

マスクを介して基板に成膜を行うための成膜装置であって、
前記基板の第1辺の周縁部を支持する第1支持部材と、前記基板の前記第1辺に対向する第2辺の周縁部を支持する第2支持部材と、を含む基板保持ユニットと、
前記基板の上方に設けられ、前記基板を吸着するための静電チャックと、
前記基板保持ユニット及び前記静電チャックを駆動するための駆動部と、を備え、
前記第1支持部材及び前記第2支持部材のそれぞれは、基板支持面部と、弾性体部を介して前記基板支持面部に接続され、前記駆動部によって駆動される軸部と、を有し、
前記第1支持部材及び前記第2支持部材のそれぞれの前記基板支持面、前記弾性体部を構成する板スプリングの弾性変形によって、前記軸部に対して前記静電チャックの吸着面に交差する方向に弾性的に変位する
成膜装置。
A film forming apparatus for forming a film on a substrate through a mask,
a substrate holding unit including a first supporting member that supports a peripheral portion of a first side of the substrate; and a second supporting member that supports a peripheral portion of a second side of the substrate that faces the first side;
an electrostatic chuck provided above the substrate for attracting the substrate;
a drive unit for driving the substrate holding unit and the electrostatic chuck ,
each of the first supporting member and the second supporting member has a substrate supporting surface portion and a shaft portion connected to the substrate supporting surface portion via an elastic body portion and driven by the driving portion;
The substrate supporting surface portion of each of the first supporting member and the second supporting member intersects the attraction surface of the electrostatic chuck with respect to the shaft portion due to elastic deformation of a plate spring that constitutes the elastic body portion. A film forming device that is elastically displaced in the direction of movement.
前記第1支持部材及び前記第2支持部材のそれぞれの前記基板支持面の高さが変化する請求項1に記載の成膜装置。 2. The film forming apparatus according to claim 1, wherein heights of said substrate supporting surface portions of said first supporting member and said second supporting member are varied. 前記弾性体部は前記静電チャックからの加圧力によって前記方向に弾性変位する請求項1又は2に記載の成膜装置。 3. The film forming apparatus according to claim 1, wherein said elastic body part is elastically displaced in said direction by a pressure applied from said electrostatic chuck. 前記第1支持部材の前記弾性体部の長さは前記第2支持部材の前記弾性体部の長さより長い請求項乃至のいずれか一項に記載の成膜装置。 4. The film forming apparatus according to claim 1 , wherein the length of the elastic portion of the first support member is longer than the length of the elastic portion of the second support member. 前記第1支持部材の前記弾性体部の弾性係数は前記第2支持部材の前記弾性体部の弾性係数より大きい請求項乃至のいずれか一項に記載の成膜装置。 5. The film forming apparatus according to claim 1 , wherein the elastic modulus of the elastic portion of the first support member is greater than the elastic modulus of the elastic portion of the second support member. 前記第1支持部材は前記第1辺に沿って並ぶ複数の支持部材を含み、前記第2支持部材は前記第2辺に沿って並ぶ複数の支持部材を含む
請求項乃至のいずれか一項に記載の成膜装置。
6. The first support member includes a plurality of support members arranged along the first side, and the second support member includes a plurality of support members arranged along the second side. The film forming apparatus according to the item.
前記基板保持ユニットは、前記基板の前記第1辺及び前記第2辺と交差する第3辺の周縁部を支持する第3支持部材と、前記基板の前記第3辺と対向する第4辺の周縁部を支持する第4支持部材とをさらに含み、
前記第3支持部材及び前記第4支持部材のそれぞれの基板支持面が前記方向に変位可能である
請求項乃至のいずれか一項に記載の成膜装置。
The substrate holding unit includes a third supporting member that supports a peripheral edge portion of a third side that intersects with the first side and the second side of the substrate, and a fourth side that faces the third side of the substrate. and a fourth support member that supports the peripheral edge,
The film forming apparatus according to any one of claims 1 to 6 , wherein the substrate supporting surfaces of the third supporting member and the fourth supporting member are displaceable in the direction.
前記第3支持部材は前記第3辺に沿って並ぶ複数の支持部材を含み、前記第4支持部材は前記第4辺に沿って並ぶ複数の支持部材を含む
請求項に記載の成膜装置。
8. The film forming apparatus according to claim 7 , wherein said third support member includes a plurality of support members arranged along said third side, and said fourth support member includes a plurality of support members arranged along said fourth side. .
前記第3支持部材及び前記第4支持部材の弾性体部の弾性係数は、前記第2支持部材の前記弾性体部より弾性係数が大きく、前記第1支持部材の前記弾性体部より弾性係数が小さい請求項に記載の成膜装置。 The elastic modulus of the elastic portions of the third support member and the fourth support member is larger than that of the elastic portion of the second support member, and is higher than that of the elastic portion of the first support member. The film forming apparatus according to claim 8 , which is small. 前記第3支持部材及び前記第4支持部材の弾性体部の長さは、前記第2支持部材の前記弾性体部の長さより長く、前記第1支持部材の前記弾性体部の長さより短い請求項又はに記載の成膜装置。 The lengths of the elastic portions of the third support member and the fourth support member are longer than the length of the elastic portion of the second support member and shorter than the length of the elastic portion of the first support member. Item 9. The film forming apparatus according to item 8 or 9 . 前記マスクが金属製であり、
前記マスクを保持するために前記基板保持ユニットの下方に設置されているマスク台と、
上記静電チャックの上方に設置され、前記マスクに磁力を印加して前記基板と前記マスクを密着させるためのマグネットと
をさらに含む請求項1乃至10のいずれか一項に記載の成膜装置。
The mask is made of metal,
a mask table installed below the substrate holding unit to hold the mask;
11. The film forming apparatus according to any one of claims 1 to 10 , further comprising a magnet installed above the electrostatic chuck and applying a magnetic force to the mask to bring the substrate and the mask into close contact with each other.
マスクを介して基板に成膜を行うための成膜方法であって、
請求項1乃至11のいずれか一項に記載の成膜装置内に基板を搬入して基板保持ユニットの支持部に基板を置く工程と、
静電チャックにて、前記基板保持ユニットの前記支持部上に置かれた基板の上面を吸着する工程と、
マスクを介して前記基板に蒸着材料を堆積させる成膜工程と
を含む成膜方法。
A film formation method for forming a film on a substrate through a mask, comprising:
A step of loading a substrate into the film forming apparatus according to any one of claims 1 to 11 and placing the substrate on a supporting portion of a substrate holding unit;
a step of attracting the upper surface of the substrate placed on the support portion of the substrate holding unit with an electrostatic chuck;
and a film forming step of depositing a vapor deposition material on the substrate through a mask.
請求項12に記載の成膜方法を用いて有機EL表示装置を製造する有機EL表示装置の製造方法。 A method for manufacturing an organic EL display device using the film forming method according to claim 12 .
JP2018160255A 2017-12-26 2018-08-29 Film forming apparatus, film forming method, and method for manufacturing organic EL display device using the same Active JP7120545B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020170180325A KR102010158B1 (en) 2017-12-26 2017-12-26 Film forming apparatus, film forming method and manufacturing method of organic el display apparatus using the same
KR10-2017-0180325 2017-12-26

Publications (3)

Publication Number Publication Date
JP2019117922A JP2019117922A (en) 2019-07-18
JP2019117922A5 JP2019117922A5 (en) 2021-02-04
JP7120545B2 true JP7120545B2 (en) 2022-08-17

Family

ID=67023186

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018160255A Active JP7120545B2 (en) 2017-12-26 2018-08-29 Film forming apparatus, film forming method, and method for manufacturing organic EL display device using the same

Country Status (3)

Country Link
JP (1) JP7120545B2 (en)
KR (1) KR102010158B1 (en)
CN (1) CN109957774A (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7057335B2 (en) * 2019-10-29 2022-04-19 キヤノントッキ株式会社 Substrate holding device, substrate processing device, substrate holding method, film forming method, and manufacturing method of electronic device
JP7057337B2 (en) * 2019-10-29 2022-04-19 キヤノントッキ株式会社 Board peeling device, board processing device, and board peeling method
CN113005398B (en) * 2019-12-20 2023-04-07 佳能特机株式会社 Film forming apparatus, film forming method, and method for manufacturing electronic device
JP7299202B2 (en) * 2020-09-30 2023-06-27 キヤノントッキ株式会社 Film forming apparatus, substrate adsorption method, and electronic device manufacturing method
JP2022131663A (en) 2021-02-26 2022-09-07 キヤノントッキ株式会社 Film deposition apparatus

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004176124A (en) 2002-11-27 2004-06-24 Ulvac Japan Ltd Alignment apparatus, film deposition system, and alignment method
WO2005091683A1 (en) 2004-03-22 2005-09-29 Doosan Dnd Co., Ltd. Substrate depositing method and organic material depositing apparatus
WO2010106958A1 (en) 2009-03-18 2010-09-23 株式会社アルバック Positioning method and vapor deposition method
JP2014120740A (en) 2012-12-19 2014-06-30 Tokyo Electron Ltd Substrate processing apparatus, and sticking or peeling method of substrate
JP2016085460A (en) 2014-10-28 2016-05-19 株式会社半導体エネルギー研究所 Function panel, manufacture method of function panel, module, and information processor
WO2016199759A1 (en) 2015-06-12 2016-12-15 株式会社アルバック Substrate holding device, film forming apparatus and substrate holding method
JP2019102801A (en) 2017-11-29 2019-06-24 キヤノントッキ株式会社 Film forming apparatus and method of manufacturing organic EL display device using the same
JP2019102802A (en) 2017-11-29 2019-06-24 キヤノントッキ株式会社 Film forming apparatus, film forming method, and manufacturing method of organic el display device using the same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05343507A (en) * 1992-06-10 1993-12-24 Fujitsu Ltd Electrostatic attraction method
JP2000243816A (en) * 1999-02-22 2000-09-08 Hitachi Electronics Eng Co Ltd Substrate chucking device
KR102490641B1 (en) * 2015-11-25 2023-01-20 삼성디스플레이 주식회사 Deposition device and depositing method

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004176124A (en) 2002-11-27 2004-06-24 Ulvac Japan Ltd Alignment apparatus, film deposition system, and alignment method
WO2005091683A1 (en) 2004-03-22 2005-09-29 Doosan Dnd Co., Ltd. Substrate depositing method and organic material depositing apparatus
WO2010106958A1 (en) 2009-03-18 2010-09-23 株式会社アルバック Positioning method and vapor deposition method
JP2014120740A (en) 2012-12-19 2014-06-30 Tokyo Electron Ltd Substrate processing apparatus, and sticking or peeling method of substrate
JP2016085460A (en) 2014-10-28 2016-05-19 株式会社半導体エネルギー研究所 Function panel, manufacture method of function panel, module, and information processor
WO2016199759A1 (en) 2015-06-12 2016-12-15 株式会社アルバック Substrate holding device, film forming apparatus and substrate holding method
JP2019102801A (en) 2017-11-29 2019-06-24 キヤノントッキ株式会社 Film forming apparatus and method of manufacturing organic EL display device using the same
JP2019102802A (en) 2017-11-29 2019-06-24 キヤノントッキ株式会社 Film forming apparatus, film forming method, and manufacturing method of organic el display device using the same

Also Published As

Publication number Publication date
KR102010158B1 (en) 2019-08-12
KR20190078432A (en) 2019-07-04
CN109957774A (en) 2019-07-02
JP2019117922A (en) 2019-07-18

Similar Documents

Publication Publication Date Title
JP7199889B2 (en) Film forming apparatus, film forming method, and electronic device manufacturing method
JP7203185B2 (en) Vacuum apparatus, film forming method, and electronic device manufacturing method
JP7289421B2 (en) Substrate support device and deposition device
JP7120545B2 (en) Film forming apparatus, film forming method, and method for manufacturing organic EL display device using the same
JP6936205B2 (en) A method for manufacturing a film forming apparatus and an organic EL display apparatus using the same.
JP7010800B2 (en) Film forming device, film forming method, and manufacturing method of organic EL display device
JP7138757B2 (en) Film forming apparatus and method for manufacturing electronic device
JP7241048B2 (en) Substrate support device and deposition device
JP6931851B2 (en) Film forming equipment, film forming method, and manufacturing method of electronic devices
JP6686100B2 (en) Film forming apparatus, film forming method, and electronic device manufacturing method
JP7012962B2 (en) An electrostatic chuck, a film forming apparatus including this, a method for holding and separating a substrate, a film forming method including this, and a method for manufacturing an electronic device using the electrostatic chuck.
KR102505832B1 (en) Adsorption apparatus, position adjusting method, and method for forming film
JP7021318B2 (en) Film forming equipment and control method of film forming equipment
JP7127765B2 (en) Electrostatic chuck, film forming apparatus, substrate adsorption method, film forming method, and electronic device manufacturing method
JP6956244B2 (en) Film formation equipment and film formation method
KR102050688B1 (en) Mask attaching device, film-forming apparatus, film-forming method, and method for manufacturing electronic device

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20200423

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20200423

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20201218

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20210422

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20210511

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20210712

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20210804

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20220201

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220404

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20220628

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20220726

R150 Certificate of patent or registration of utility model

Ref document number: 7120545

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150