JP7199889B2 - Film forming apparatus, film forming method, and electronic device manufacturing method - Google Patents

Film forming apparatus, film forming method, and electronic device manufacturing method Download PDF

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JP7199889B2
JP7199889B2 JP2018179449A JP2018179449A JP7199889B2 JP 7199889 B2 JP7199889 B2 JP 7199889B2 JP 2018179449 A JP2018179449 A JP 2018179449A JP 2018179449 A JP2018179449 A JP 2018179449A JP 7199889 B2 JP7199889 B2 JP 7199889B2
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substrate
mask
magnetic force
film forming
force applying
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JP2019099910A (en
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博 石井
一史 柏倉
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Canon Tokki Corp
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/042Coating on selected surface areas, e.g. using masks using masks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50Substrate holders
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/52Means for observation of the coating process
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

Description

本発明は、成膜装置及び成膜方法に関するもので、基板吸着手段の昇降機構と磁力印加手段の昇降機構とを、アライメントステージに搭載した構造を持つ成膜装置及びこれを用いる成膜方法に関するものである。 The present invention relates to a film forming apparatus and a film forming method, and more particularly to a film forming apparatus having a structure in which an elevating mechanism for a substrate attracting means and an elevating mechanism for a magnetic force applying means are mounted on an alignment stage, and a film forming method using the same. It is.

最近、フラットパネル表示装置として有機EL表示装置が脚光を浴びている。有機EL表示装置は自発光ディスプレイであり、応答速度、視野角、薄型化などの特性が液晶パネルディスプレイより優れており、モニタ、テレビ、スマートフォンに代表される各種携帯端末などで既存の液晶パネルディスプレイを早いスピードで代替している。また、自動車用ディスプレイ等にも、その応用分野を広げている。 Recently, an organic EL display device has been spotlighted as a flat panel display device. Organic EL display devices are self-luminous displays, and are superior to liquid crystal panel displays in characteristics such as response speed, viewing angle, and thinness. are replaced at a high speed. In addition, the field of application is expanding to automobile displays and the like.

有機EL表示装置の素子は2つの向かい合う電極(カソード電極、アノード電極)の間に発光を起こす有機物層が形成された基本構造を持つ。有機EL表示装置素子の有機物層及び電極層は、成膜装置の真空チャンバの下部に設けられた蒸着源を加熱することで蒸発された蒸着材料を画素パターンが形成されたマスクを通じて真空チャンバ上部に置かれた基板(の下面)に蒸着させることで形成される。 An element of an organic EL display device has a basic structure in which an organic material layer that emits light is formed between two electrodes (a cathode electrode and an anode electrode) facing each other. The organic layer and the electrode layer of the organic EL display device are formed by heating the vapor deposition source provided in the lower part of the vacuum chamber of the film forming apparatus to vaporize the vapor deposition material through the mask on which the pixel pattern is formed to the upper part of the vacuum chamber. It is formed by vapor deposition on (the lower surface of) a placed substrate.

このような上向蒸着方式の成膜装置の真空チャンバ内において、基板は基板ホルダによって保持されるが、基板(の下面)に形成された有機物層や電極層に損傷を与えないように基板の下面の周縁部が基板ホルダの支持部及びクランプによって保持される。しかし、この場合、基板のサイズが大きくなるにつれて、基板ホルダの支持部及びクランプによって支持されない基板の中央部が基板の自重によって撓む。これは基板のマスクに対するアライメント精度及び基板とマスクとの密着精度を落とし、結果的に、基板上への蒸着精度を下げる要因となっている。 The substrate is held by a substrate holder in the vacuum chamber of such an upward vapor deposition type film forming apparatus. The peripheral edge of the lower surface is held by the supports and clamps of the substrate holder. However, in this case, as the size of the substrate increases, the central portion of the substrate that is not supported by the supporting portion of the substrate holder and the clamp bends due to the substrate's own weight. This lowers the accuracy of alignment of the substrate with respect to the mask and the accuracy of close contact between the substrate and the mask, resulting in lowering the accuracy of vapor deposition on the substrate.

基板の自重による撓みを低減させるための方法として静電チャックを使って基板を保持する技術が検討されている。すなわち、基板の上部に静電チャックを設けて、静電チャックに電圧を印加し基板の上面を静電チャックに吸着させることで、基板の中央部が静電チャックの静電引力によって引っ張られるようになり、基板の撓みが低減される。 As a method for reducing the deflection of the substrate due to its own weight, a technique of holding the substrate using an electrostatic chuck is being studied. That is, an electrostatic chuck is provided above the substrate, and a voltage is applied to the electrostatic chuck to attract the upper surface of the substrate to the electrostatic chuck so that the central portion of the substrate is pulled by the electrostatic attraction force of the electrostatic chuck. and the deflection of the substrate is reduced.

静電チャックを用いる従来の成膜装置においては、静電チャックに吸着された状態の基板をマスクに対して水平方向(XYθ方向)に相対的に移動させることで、基板とマスクとの相対的な位置を調整するアライメント工程を行う。 In a conventional film forming apparatus using an electrostatic chuck, the substrate and the mask are moved relative to each other while being attracted to the electrostatic chuck in the horizontal direction (XYθ direction). An alignment process is performed to adjust the correct position.

このように相対的位置が調整(アライメント)された基板をマスクの上面に載置した状態で、マグネット板を基板の上部から下降させて、マグネット板を基板の上面に当接させる。マグネット板は、基板を挟んでマスクに磁力を印加することにより、基板とマスクを密着させる。 With the substrate whose relative position is adjusted (aligned) in this way placed on the upper surface of the mask, the magnet plate is lowered from above the substrate to bring the magnet plate into contact with the upper surface of the substrate. The magnet plates sandwich the substrate and apply a magnetic force to the mask, thereby bringing the substrate and the mask into close contact with each other.

ところで、静電チャックを用いる方式の成膜装置においては、基板クランプを用いる方式の成膜装置に比べて、静電チャックと基板との間の位置調整及びマグネット板とマスクとの間の位置調整の精度が成膜精度に大きな影響を及ぼす。 By the way, in a film deposition apparatus using an electrostatic chuck, position adjustment between the electrostatic chuck and the substrate and position adjustment between the magnet plate and the mask are more difficult than in a film deposition apparatus using a substrate clamp. accuracy has a great influence on film formation accuracy.

つまり、基板の搬送ロボットによる基板の搬送誤差などによって静電チャックと基板と
の相対的位置が水平方向(XYθ方向)にずれた状態で基板を静電チャックに吸着させる場合、基板が静電チャックにきちんと密着されなくなる。このような状態で基板のマスクに対するアライメント工程を行うと、基板のマスクに対する位置調整の精度が落ちてしまう。
In other words, when the substrate is attracted to the electrostatic chuck while the relative position between the electrostatic chuck and the substrate is shifted in the horizontal direction (XYθ direction) due to a substrate transfer error caused by the substrate transfer robot, the substrate may move to the electrostatic chuck. It will not be properly adhered to. If the alignment process of the substrate with respect to the mask is performed in such a state, the accuracy of positional adjustment of the substrate with respect to the mask will be degraded.

また、マグネット板とこれから磁力を受けるマスクとの間の相対的位置がずれた状態でマグネット板がマスクに対して磁力を印加する場合、マスクに磁力が十分に印加されず、基板とマスクとの間の密着精度が落ちる問題がある。 Further, when the magnet plate applies a magnetic force to the mask in a state in which the relative position between the magnet plate and the mask which receives the magnetic force is shifted, the magnetic force is not sufficiently applied to the mask, and the substrate and the mask are separated from each other. There is a problem that the accuracy of close contact between the electrodes is lowered.

本発明は、静電チャックと基板との間、及びマグネット板とマスクとの間で相対的な位置ずれが発生した場合にも、静電チャックを基板に対して位置調整することができ、マグネット板をマスクに対して位置調整することができる成膜装置、成膜方法、電子デバイスの製造方法を提供することを主な目的とする。 The present invention can adjust the position of the electrostatic chuck with respect to the substrate even when there is a relative positional deviation between the electrostatic chuck and the substrate and between the magnet plate and the mask. A main object of the present invention is to provide a film forming apparatus, a film forming method, and an electronic device manufacturing method that can adjust the position of a plate with respect to a mask.

本発明の第1態様による成膜装置は、マスクを介して基板に蒸着材料を成膜するための成膜装置であって、蒸着工程が行われる空間を定義する真空チャンバと、前記真空チャンバ内に設置され、基板を吸着するための基板吸着手段と、前記真空チャンバ内で前記基板吸着手段の上に設けられ、マスクに磁力を印加するための磁力印加手段と、前記基板吸着手段の下で基板を保持するための基板保持手段であって、第1方向、前記第1方向と交差する第2方向、及び、前記第1方向及び前記第2方向と交差する第3方向を軸にした回転方向に固定されるように設置された基板保持手段と、前記基板保持手段の下に設置され、マスクを保持するためのマスク保持手段であって、前記第1方向、前記第2方向、及び前記回転方向に固定されるように設置されたマスク保持手段と、前記真空チャンバの第1外部面上に設置され、前記磁力印加手段を前記マスクに対して位置調整するために、前記基板保持手段に保持された基板が位置調整されて吸着された前記基板吸着手段及び前記磁力印加手段を、第1方向、前記第1方向と交差する第2方向、及び、前記第1方向及び前記第2方向と交差する第3方向を軸にした回転方向中少なくとも一つの方向に共通に移動或いは回転させるためのアライメントステージとを含む。
A film forming apparatus according to a first aspect of the present invention is a film forming apparatus for forming a film of a vapor deposition material on a substrate through a mask, comprising: a vacuum chamber defining a space in which a vapor deposition process is performed; magnetic force application means for applying a magnetic force to the mask provided above the substrate adsorption means in the vacuum chamber; and under the substrate adsorption means A substrate holding means for holding a substrate , the rotation about a first direction, a second direction intersecting the first direction, and a third direction intersecting the first direction and the second direction. and a mask holding means installed under the substrate holding means for holding a mask , wherein the first direction, the second direction, and the a mask holding means mounted to be rotationally fixed ; and a substrate holding means mounted on a first exterior surface of the vacuum chamber for aligning the magnetic force applying means with respect to the mask. The substrate attracting means and the magnetic force applying means with which the held substrate is position-adjusted and attracted are moved in a first direction, a second direction intersecting with the first direction, and the first direction and the second direction. an alignment stage for commonly moving or rotating in at least one of the directions of rotation about the intersecting third direction.

本発明の第2態様による成膜方法は、マスクを介して基板に蒸着材料を蒸着するための成膜方法であって、本発明の第1態様による成膜装置の真空チャンバ内に搬入されたマスクをマスク保持手段に載置する段階、前記成膜装置の前記真空チャンバ内に基板を搬入して基板保持手段に載置する段階、基板吸着手段を前記基板保持手段に載置された基板に対
して位置調整する基板吸着手段アライメント段階、位置調整された前記基板吸着手段によって前記基板を吸着させる段階、前記基板吸着手段に吸着された基板を前記マスク保持手段に載置されたマスクに対して位置調整する基板アライメント段階、磁力印加手段を前記マスクに対して位置調整する磁力印加手段アライメント段階、位置調整された前記基板を前記マスク上に載置する段階、位置調整された前記磁力印加手段を前記基板の上方に移動させて前記基板と前記マスクを密着させる段階、及びマスクを介して基板上に蒸着材料を成膜する段階を含む。
A film forming method according to a second aspect of the present invention is a film forming method for vapor-depositing a vapor deposition material onto a substrate through a mask, the film forming method being carried into the vacuum chamber of the film forming apparatus according to the first aspect of the present invention. placing a mask on a mask holding means; carrying a substrate into the vacuum chamber of the film forming apparatus and placing it on the substrate holding means; a step of aligning the substrate chucking means for adjusting the position thereof; a step of chucking the substrate by the position-adjusted substrate chucking means; a step of aligning a substrate for position adjustment; a step of aligning a magnetic force applying means for positioning a magnetic force applying means with respect to said mask; a step of placing said position- adjusted substrate on said mask; A step of moving the substrate above the substrate to bring the substrate and the mask into close contact with each other, and a step of depositing a vapor deposition material on the substrate through the mask.

本発明の第3態様による電子デバイス製造方法は本発明の第2態様による成膜方法を用いて電子デバイスを製造する。 An electronic device manufacturing method according to the third aspect of the present invention manufactures an electronic device using the film forming method according to the second aspect of the present invention.

本発明によると、基板吸着手段昇降機構及び磁力印加手段昇降機構を、アライメントステージ上に搭載することで、基板吸着手段と基板との間に水平方向(XYθ方向)に相対的な位置ずれが発生した場合に、基板吸着手段昇降機構が搭載されたアライメントステージを基板保持台上に載置された基板に対して水平方向(XYθ方向)に移動させて、基板吸着手段と基板との間の相対的な位置を調整できるようになる。また、磁力印加手段昇降機構も、アライメントステージ上に搭載されるので、磁力印加手段とマスクとの間の相対的な位置ずれが生じた場合にも、基板とマスク上に磁力印加手段を下降させる前に、磁力印加手段昇降機構が搭載されたアライメントステージをマスクに対して水平方向(XYθ方向)に移動させることで、磁力印加手段とマスクとの間の相対的な位置を調整できるようになる。 According to the present invention, by mounting the substrate chucking means elevating mechanism and the magnetic force applying means elevating mechanism on the alignment stage, a relative positional deviation occurs between the substrate chucking means and the substrate in the horizontal direction (XYθ direction). In this case, the alignment stage on which the substrate chucking means elevating mechanism is mounted is moved in the horizontal direction (XYθ direction) with respect to the substrate placed on the substrate holding table, so that the relative position between the substrate chucking means and the substrate is increased. position can be adjusted. Further, since the magnetic force applying means elevating mechanism is also mounted on the alignment stage, the magnetic force applying means can be lowered above the substrate and the mask even when there is a relative positional deviation between the magnetic force applying means and the mask. The relative position between the magnetic force applying means and the mask can be adjusted by moving the alignment stage on which the magnetic force applying means elevating mechanism is mounted in the horizontal direction (XYθ direction) with respect to the mask. .

これにより、基板吸着手段と基板との間の吸着精度を向上させて、アライメント工程の
精度を向上させることができ、同時に磁力印加手段による基板とマスクの密着精度を向上させることができるようになる。その結果、成膜精度を向上させることができるようになる。
As a result, the accuracy of the alignment process can be improved by improving the accuracy of attraction between the substrate attraction means and the substrate, and at the same time, the accuracy of close contact between the substrate and the mask by the magnetic force application means can be improved. . As a result, it becomes possible to improve film formation accuracy.

図1は有機EL表示装置の製造ラインの一部の模式図である。FIG. 1 is a schematic diagram of part of a manufacturing line for an organic EL display device. 図2は成膜装置の模式図である。FIG. 2 is a schematic diagram of a film forming apparatus. 図3は本実施例のアライメントステージの構成を示す模式図である。FIG. 3 is a schematic diagram showing the configuration of the alignment stage of this embodiment. 図4は本実施例のアライメント工程を説明するための模式図である。FIG. 4 is a schematic diagram for explaining the alignment process of this embodiment. 図5は有機EL表示装置の全体図及び有機EL表示装置の素子の断面図である。FIG. 5 is an overall view of an organic EL display device and a cross-sectional view of elements of the organic EL display device.

以下、図面を参照しつつ本発明の好適な実施形態及び実施例を説明する。ただし、以下の実施形態及び実施例は本発明の好ましい構成を例示的に示すものにすぎず、本発明の範囲はそれらの構成に限定されない。また、以下の説明における、装置のハードウェア構成及びソフトウェア構成、処理フロー、製造条件、寸法、材質、形状などは、特に特定的な記載がないかぎりは、本発明の範囲をそれらのみに限定する趣旨のものではない。 Preferred embodiments and examples of the present invention will be described below with reference to the drawings. However, the following embodiments and examples merely exemplify preferred configurations of the present invention, and the scope of the present invention is not limited to those configurations. In addition, unless otherwise specified, the scope of the present invention is limited only to the hardware configuration and software configuration of the apparatus, process flow, manufacturing conditions, dimensions, materials, shapes, etc., in the following description. It's not intended.

本発明は、基板の表面に真空蒸着によってパターンの薄膜(材料層)を形成する装置に好ましく適用することができる。基板の材料としては、硝子、高分子材料のフィルム、金属などの任意の材料を選択することができるし、また、蒸着材料としても、有機材料、金属性材料(金属、金属酸化物など)などの任意の材料を選択することができる。本発明の技術は、具体的には、有機電子デバイス(例えば、有機EL表示装置、薄膜太陽電池)、光学部材などの製造装置に適用可能である。その中でも、有機EL表示装置は本発明の好ましい適用例の一つである。 The present invention can be preferably applied to an apparatus for forming a patterned thin film (material layer) on the surface of a substrate by vacuum deposition. As the material of the substrate, any material such as glass, polymer material film, and metal can be selected, and as the vapor deposition material, organic material, metallic material (metal, metal oxide, etc.), etc. can be selected. any material can be selected. The technology of the present invention is specifically applicable to manufacturing apparatuses for organic electronic devices (eg, organic EL display devices, thin-film solar cells), optical members, and the like. Among them, an organic EL display device is one of the preferred application examples of the present invention.

<電子デバイス製造ライン>
図1は、電子デバイスの製造ラインの構成の一部を模式的に示す上視図である。図1の製造ラインは、例えば、スマートフォン用の有機EL表示装置の表示パネルの製造に用いられる。スマートフォン用の表示パネルの場合、例えば約1800mm×約1500mmのサイズの基板に有機ELの成膜を行った後、該基板をダイシングして複数の小サイズのパネルに作製される。
<Electronic device production line>
FIG. 1 is a top view schematically showing part of the configuration of a manufacturing line for electronic devices. The production line of FIG. 1 is used, for example, to produce display panels for organic EL display devices for smartphones. In the case of a display panel for smartphones, for example, after forming an organic EL film on a substrate having a size of about 1800 mm×about 1500 mm, the substrate is diced to produce a plurality of small-sized panels.

電子デバイスの製造ラインは、一般に、図1に示すように、複数の成膜室11、12と、搬送室13とを有する。搬送室13内には、基板10を保持し搬送する搬送ロボット14が設けられている。搬送ロボット14は、例えば、多関節アームに、基板を保持するロボットハンドが取り付けられた構造を持つロボットであり、各成膜室への基板10の搬入や搬出を行う。 A manufacturing line for electronic devices generally has a plurality of film forming chambers 11 and 12 and a transfer chamber 13, as shown in FIG. A transfer robot 14 for holding and transferring the substrate 10 is provided in the transfer chamber 13 . The transport robot 14 is, for example, a robot having a structure in which a robot hand for holding a substrate is attached to an articulated arm, and carries the substrate 10 into and out of each film forming chamber.

各成膜室11、12にはそれぞれ成膜装置(蒸着装置とも呼ぶ)が設けられている。搬送ロボット14との基板10の受け渡し、基板10とマスクの相対位置の調整(アライメント)、マスク上への基板10の固定、成膜(蒸着)などの一連の成膜プロセスは、成膜装置によって自動で行われる。 Each of the film forming chambers 11 and 12 is provided with a film forming apparatus (also referred to as a vapor deposition apparatus). A series of film formation processes, such as transfer of the substrate 10 to and from the transport robot 14, adjustment of the relative positions of the substrate 10 and the mask (alignment), fixing of the substrate 10 onto the mask, and film formation (evaporation), are performed by the film formation apparatus. done automatically.

以下、成膜室の成膜装置の構成について説明する。 The configuration of the film forming apparatus in the film forming chamber will be described below.

<成膜装置>
図2は、成膜装置2の構成を概略的に示す断面図である。以下の説明においては、鉛直方向をZ方向とするXYZ直交座標係を使う。成膜時に基板が水平面(XY平面)と平行
に固定されることを仮定する時、基板の短辺に平行な方向をX方向(第1方向)、長辺に平行な方向をY方向(第2方向)とする。またZ軸周りの回転角をθ(回転方向)で表示する。
<Deposition equipment>
FIG. 2 is a cross-sectional view schematically showing the configuration of the film forming apparatus 2. As shown in FIG. In the following description, an XYZ orthogonal coordinate system with the vertical direction as the Z direction is used. Assuming that the substrate is fixed parallel to the horizontal plane (XY plane) during film formation, the direction parallel to the short side of the substrate is the X direction (first direction), and the direction parallel to the long side is the Y direction (first direction). two directions). Also, the rotation angle around the Z-axis is indicated by θ (rotation direction).

成膜装置2は、成膜工程が行われる空間を定義する真空チャンバ20を具備する。真空チャンバ20の内部は、真空雰囲気、或いは、窒素ガスなどの不活性ガス雰囲気で維持される。 The film-forming apparatus 2 comprises a vacuum chamber 20 defining a space in which the film-forming process takes place. The inside of the vacuum chamber 20 is maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen gas.

成膜装置2の真空チャンバ20内の上部には、基板を保持する基板保持台21、マスクを保持するマスク保持台22、基板を吸着するための基板吸着手段23、金属製のマスクに磁力を印加するための磁力印加手段24などが設けられ、成膜装置の真空チャンバ20内の下部には、蒸着材料が収納される蒸着源25などが設けられる。 A substrate holder 21 for holding a substrate, a mask holder 22 for holding a mask, a substrate chucking means 23 for chucking the substrate, and a metal mask with magnetic force are provided in the upper part of the vacuum chamber 20 of the film forming apparatus 2 . A magnetic force applying means 24 for applying the magnetic force is provided, and a vapor deposition source 25 and the like for containing vapor deposition materials are provided in the lower part of the vacuum chamber 20 of the film forming apparatus.

基板保持台21は、搬送室13の搬送ロボット14から受取った基板10を載置するフレーム状の手段である。基板保持台21は、真空チャンバ20に固定されるように設置されるが、本発明はこれに限定されない。例えば、基板保持台21は水平方向(XYθ方向)には固定されるが、鉛直方向(Z方向、第3方向)には昇降可能に設置されてもよい。基板保持台21は基板の下面の周縁部を支持する支持部211、212を含む。支持部上には基板の損傷を防止するため、フッ素コーティングされたパッド(不図示)が設置されてもよい。 The substrate holding table 21 is a frame-like means on which the substrate 10 received from the transfer robot 14 in the transfer chamber 13 is placed. The substrate holding table 21 is installed so as to be fixed to the vacuum chamber 20, but the present invention is not limited to this. For example, the substrate holding table 21 is fixed in the horizontal direction (XYθ direction), but may be installed so as to be movable up and down in the vertical direction (Z direction, third direction). The substrate holder 21 includes support portions 211 and 212 that support the periphery of the bottom surface of the substrate. A fluorine-coated pad (not shown) may be placed on the support to prevent damage to the substrate.

基板保持台21の下には、真空チャンバ20に固定されたフレーム状のマスク保持台22が設置され、マスク保持台22には、基板10上に形成される薄膜パターンに対応する開口パターンを有するマスク221が置かれる。スマートフォン用の有機EL素子を製造するのに使われるマスクは、微細な開口パターンが形成された金属製のマスクであり、FMM(Fine Metal Mask)とも呼ぶ。マスク保持台22は、真空チャンバ20に水平方向には固定されるように設置され、鉛直方向には昇降可能に設置されてもよい。 A frame-shaped mask holding table 22 fixed to the vacuum chamber 20 is installed under the substrate holding table 21 , and the mask holding table 22 has an opening pattern corresponding to the thin film pattern formed on the substrate 10 . A mask 221 is placed. A mask used to manufacture organic EL elements for smartphones is a metal mask having a fine opening pattern, and is also called an FMM (Fine Metal Mask). The mask holding table 22 may be installed so as to be fixed in the vacuum chamber 20 in the horizontal direction, and may be installed in the vertical direction so as to be movable up and down.

基板保持台21の支持部の上方には、基板を吸着して固定させるための基板吸着手段23が設けられる。基板吸着手段23は、例えば、セラミックス材質のマトリックス内に金属電極などの電気回路が埋め込まれた構造を持つ静電チャックであってもいいが、これに限らない。静電チャック方式の基板吸着手段23において、金属電極にプラス(+)及びマイナス(-)電圧が印加されれば、セラミックスマトリックスを通じて基板に分極電荷が誘導され、これら基板と基板吸着手段23との間の静電気的な引力によって基板が基板吸着手段23に吸着固定される。基板吸着手段23は埋め込まれた電気回路の構造によって複数のモジュールに区画することができる。 A substrate adsorption means 23 for adsorbing and fixing a substrate is provided above the supporting portion of the substrate holding table 21 . The substrate attracting means 23 may be, for example, an electrostatic chuck having a structure in which electric circuits such as metal electrodes are embedded in a matrix of ceramic material, but is not limited to this. When positive (+) and negative (-) voltages are applied to the metal electrodes in the electrostatic chuck type substrate chucking means 23, polarization charges are induced in the substrate through the ceramic matrix, and the substrate chucking means 23 and the substrate are induced. The substrate is attracted and fixed to the substrate attracting means 23 by electrostatic attraction between them. The substrate attracting means 23 can be divided into a plurality of modules according to the structure of the embedded electric circuit.

基板吸着手段23の上には、金属製のマスク221に磁力を印加してマスクの撓みを防止し、マスク221と基板10とを密着させるための磁力印加手段24が設けられる。磁力印加手段24は、永久磁石又は電磁石から構成され、複数のモジュールに区画することができる。 A magnetic force applying means 24 is provided on the substrate attracting means 23 to apply a magnetic force to the metal mask 221 to prevent the mask from bending and bring the mask 221 and the substrate 10 into close contact with each other. The magnetic force applying means 24 is composed of permanent magnets or electromagnets, and can be partitioned into a plurality of modules.

図2には図示していないが、基板吸着手段(23)と磁力印加手段(24)との間には基板を冷却させるための冷却板(不図示)を設置することができる。冷却板は、基板吸着手段(23)又は磁力印加手段(24)と一体で形成されてもよい。 Although not shown in FIG. 2, a cooling plate (not shown) for cooling the substrate can be installed between the substrate attracting means 23 and the magnetic force applying means 24 . The cooling plate may be formed integrally with the substrate attracting means (23) or the magnetic force applying means (24).

蒸着源25は、基板に成膜される蒸着材料が収納されるるつぼ(不図示)、るつぼを加熱するためのヒータ(不図示)、蒸着源からの蒸発レートが一定になるまで蒸着材料が基板に飛散することを阻むシャッタ(不図示)などを含む。蒸着源25は、点(point
)蒸着源、線形(linear)蒸着源、リボルバ蒸着源などの用途によって多様な構成を持つことができる。
The vapor deposition source 25 includes a crucible (not shown) in which the vapor deposition material to be deposited on the substrate is stored, a heater (not shown) for heating the crucible, and the vapor deposition material until the evaporation rate from the vapor deposition source becomes constant. It includes a shutter (not shown) and the like that prevent scattering. The vapor deposition source 25 is a point
) It may have various configurations according to its use, such as a deposition source, a linear deposition source, a revolver deposition source, and the like.

図2に図示しなかったが、成膜装置2は、基板に蒸着された膜の厚さを測定するための膜厚モニタ(不図示)及び、膜厚算出ユニット(不図示)を含む。 Although not shown in FIG. 2, the film forming apparatus 2 includes a film thickness monitor (not shown) for measuring the thickness of the film deposited on the substrate and a film thickness calculation unit (not shown).

成膜装置2の真空チャンバ20の外部上面には、基板吸着手段23及び磁力印加手段24などを鉛直方向(第3方向)に昇降させるための昇降機構、及び基板吸着手段23及び磁力印加手段24などを水平方向に(XYθ方向に)移動させるためのアライメントステージなどが設置される。本実施例では、図3を参照して後述するとおり、基板10に対する基板吸着手段23の位置調整及びマスクに対する磁力印加手段24の位置調整のために、基板吸着手段23の昇降機構及び磁力印加手段24の昇降機構が、アライメントステージ上に搭載される。 On the outer upper surface of the vacuum chamber 20 of the film forming apparatus 2, an elevating mechanism for lifting and lowering the substrate attracting means 23 and the magnetic force applying means 24 in the vertical direction (third direction), the substrate attracting means 23 and the magnetic force applying means 24 are provided. An alignment stage or the like is installed for moving the laser in the horizontal direction (in the XYθ directions). In this embodiment, as will be described later with reference to FIG. 3, an elevating mechanism and magnetic force application means for the substrate attraction means 23 are provided for position adjustment of the substrate attraction means 23 with respect to the substrate 10 and position adjustment of the magnetic force application means 24 with respect to the mask. 24 lift mechanisms are mounted on the alignment stage.

また、本実施例の成膜装置2には、アライメント工程のために、真空チャンバ20の天井に設けられた窓を通じて基板10、基板吸着手段23、マスク221及び磁力印加手段24に形成されたアライメントマークを撮影するアライメント用カメラ(不図示)も設けられる。 Further, in the film forming apparatus 2 of the present embodiment, for the alignment process, the alignments formed on the substrate 10, the substrate attracting means 23, the mask 221 and the magnetic force applying means 24 through the window provided on the ceiling of the vacuum chamber 20 are provided. An alignment camera (not shown) is also provided for photographing the marks.

以下、本実施例の成膜装置で行われる成膜プロセスの各段階を説明する。 Each step of the film forming process performed by the film forming apparatus of this embodiment will be described below.

まず、成膜装置の真空チャンバ20内に新しいマスクが搬入されて、マスク保持台22上に載置される。 First, a new mask is carried into the vacuum chamber 20 of the film forming apparatus and placed on the mask holder 22 .

次いで、搬送室13の搬送ロボット14によって基板が、真空チャンバ20内に搬入されて基板保持台21に置かれると、基板吸着手段23が下降して基板保持台21上の基板を吸着して固定する。本実施例では、基板を基板吸着手段23に吸着させる前に、基板吸着手段23と基板10の相対的な位置を調整する基板吸着手段アライメントを行う。 Next, when the substrate is carried into the vacuum chamber 20 by the transfer robot 14 of the transfer chamber 13 and placed on the substrate holding table 21, the substrate adsorption means 23 descends to adsorb and fix the substrate on the substrate holding table 21. do. In this embodiment, before the substrate is adsorbed by the substrate adsorption means 23, the substrate adsorption means alignment for adjusting the relative positions of the substrate adsorption means 23 and the substrate 10 is performed.

続いて、基板吸着手段23に吸着された状態の基板10とマスク保持台22上に置かれているマスク221との間の相対的位置の測定及び調整を行う基板アライメント工程が行われる。 Subsequently, a substrate alignment step is performed for measuring and adjusting the relative position between the substrate 10 sucked by the substrate sucking means 23 and the mask 221 placed on the mask holding table 22 .

基板アライメント工程が完了すれば、基板10を吸着固定している基板吸着手段23が昇降機構によってさらに下降して基板10をマスク221上に置く。その後、磁力印加手段24が昇降機構によって下降することで、基板10とマスク221を密着させる。本実施例では、磁力印加手段24によって基板10とマスク221とを密着させる前に、磁力印加手段24とマスク221との間の相対的な位置を調整する磁力印加手段アライメントを行う。 When the substrate alignment process is completed, the substrate attracting means 23 that attracts and fixes the substrate 10 is further lowered by the elevating mechanism to put the substrate 10 on the mask 221 . After that, the magnetic force applying means 24 is lowered by the elevating mechanism, thereby bringing the substrate 10 and the mask 221 into close contact with each other. In this embodiment, magnetic force applying means alignment for adjusting the relative position between the magnetic force applying means 24 and the mask 221 is performed before the substrate 10 and the mask 221 are brought into close contact with each other by the magnetic force applying means 24 .

この状態で、蒸着源25のシャッタが開かれて、蒸着源25のるつぼから蒸発された蒸着材料が、マスクの微細パターン開口を通して基板に蒸着される。 In this state, the shutter of the deposition source 25 is opened, and the deposition material evaporated from the crucible of the deposition source 25 is deposited on the substrate through the fine pattern openings of the mask.

基板に蒸着された蒸着材料の膜厚が所定の厚さに到逹すれば、蒸着源25のシャッタが閉じ、その後、搬送ロボット14が、基板を真空チャンバ20から搬送室13に搬出する。所定の枚数の基板に対して、基板搬入から基板搬出までの工程を繰り返して行った後、蒸着材料が堆積されてこれ以上使うことができなくなったマスクを、成膜装置から搬出して、新しいマスクを成膜装置に搬入する。 When the film thickness of the deposition material deposited on the substrate reaches a predetermined thickness, the shutter of the deposition source 25 is closed, and then the transfer robot 14 transfers the substrate from the vacuum chamber 20 to the transfer chamber 13 . After repeating the process from carrying in the substrates to carrying out the substrates for a predetermined number of substrates, the mask that can no longer be used due to the accumulation of vapor deposition material is carried out from the film forming apparatus and replaced with a new one. The mask is carried into the film forming apparatus.

<アライメントステージ>
以下、図3を参照して本実施例のアライメントステージ30の構成を説明する。
<Alignment stage>
The configuration of the alignment stage 30 of this embodiment will be described below with reference to FIG.

真空チャンバ20の外部上面(第1外部面)には、基板吸着手段23の基板10に対する位置調整及び磁力印加手段24のマスクに対する位置調整のために、基板吸着手段23及び磁力印加手段24を水平方向(XYθ方向)に移動させるためのアライメントステージ30、基板吸着手段23をZ軸方向に昇降させるための基板吸着手段Z軸昇降機構31及び、磁力印加手段24をZ軸方向に昇降させるための磁力印加手段Z軸昇降機構32などが設置される。 On the outer upper surface (first outer surface) of the vacuum chamber 20, the substrate attracting means 23 and the magnetic force applying means 24 are horizontally arranged for adjusting the position of the substrate attracting means 23 with respect to the substrate 10 and adjusting the position of the magnetic force applying means 24 with respect to the mask. an alignment stage 30 for moving in directions (XYθ directions), a substrate adsorption means Z-axis elevating mechanism 31 for elevating the substrate adsorption means 23 in the Z-axis direction, and a mechanism for elevating the magnetic force application means 24 in the Z-axis direction. A magnetic force application means Z-axis elevating mechanism 32 and the like are installed.

アライメントステージ30は、真空チャンバの外部上面に固定されたアライメントステージ駆動用モータ301からリニアガイドを通じて水平方向(XYθ方向)への駆動力を受ける。すなわち、真空チャンバ外側上面にガイドレール(不図示)が固定されて設置され、ガイドレール上にリニアブロックが移動可能に設置される。リニアブロック上にアライメントステージベース板302が搭載される。真空チャンバの外側上面に固定されたアライメントステージ駆動用モータ301からの駆動力によって、リニアブロックを水平方向(XYθ方向)に移動させることで、リニアブロック上に搭載されたアライメントステージベース板302の動きに従って、アライメントステージ30全体を水平方向(XYθ方向)に移動させることができる。 The alignment stage 30 receives driving force in the horizontal direction (XYθ directions) through linear guides from an alignment stage driving motor 301 fixed to the upper surface of the outside of the vacuum chamber. That is, a guide rail (not shown) is fixedly installed on the outer upper surface of the vacuum chamber, and a linear block is movably installed on the guide rail. An alignment stage base plate 302 is mounted on the linear block. Movement of the alignment stage base plate 302 mounted on the linear block is achieved by moving the linear block in the horizontal direction (XYθ direction) with the driving force from the alignment stage driving motor 301 fixed on the outer upper surface of the vacuum chamber. Accordingly, the entire alignment stage 30 can be moved in the horizontal direction (XYθ directions).

基板吸着手段Z軸昇降機構31及び磁力印加手段Z軸昇降機構32は、後述するようにアライメントステージ30に搭載されるので、アライメントステージ30が水平方向(XYθ方向)に移動するにつれて、基板吸着手段23及び磁力印加手段24はアライメントステージ30の移動に追従して、水平方向(XYθ方向)に移動する。 The substrate adsorption means Z-axis elevating mechanism 31 and the magnetic force applying means Z-axis elevating mechanism 32 are mounted on the alignment stage 30 as will be described later. 23 and the magnetic force application means 24 follow the movement of the alignment stage 30 and move in the horizontal direction (XYθ direction).

基板吸着手段Z軸昇降機構31は、基板吸着手段23をZ軸方向に昇降させる機構であり、アライメントステージベース板302上に搭載される。真空チャンバ20内の基板吸着手段23は、真空チャンバ20の外部上面を通して基板吸着手段Z軸昇降機構31に繋がる。基板吸着手段Z軸昇降機構31は、基板吸着手段昇降駆動用モータ(不図示)と基板吸着手段昇降駆動用モータの駆動力を基板吸着手段23に伝達するための基板昇降駆動力伝達機構(不図示)とを含む。基板昇降駆動力伝達機構として、リニアガイド又は、ボールねじなどを使うこともできるが、本発明はこれに限らない。 The substrate adsorption means Z-axis elevating mechanism 31 is a mechanism for elevating the substrate adsorption means 23 in the Z-axis direction, and is mounted on the alignment stage base plate 302 . The substrate adsorption means 23 in the vacuum chamber 20 is connected to the substrate adsorption means Z-axis elevating mechanism 31 through the outer upper surface of the vacuum chamber 20 . The substrate adsorption means Z-axis elevation mechanism 31 includes a substrate adsorption means elevation drive motor (not shown) and a substrate elevation driving force transmission mechanism (not shown) for transmitting the driving force of the substrate adsorption means elevation drive motor to the substrate adsorption means 23 . shown). A linear guide, a ball screw, or the like can be used as the substrate lifting drive force transmission mechanism, but the present invention is not limited to this.

磁力印加手段Z軸昇降機構32は、磁力印加手段24をZ方向に駆動させるための駆動力を発生させる磁力印加手段昇降駆動用モータ(不図示)及び、磁力印加手段昇降駆動用モータからの駆動力を磁力印加手段24に伝えるための磁力印加手段昇降駆動力伝達機構(不図示)を含み、アライメントステージベース板302上に搭載される。磁力印加手段昇降駆動力伝達機構として、ボールねじ又は、リニアガイドなどを使うこともできるが、本発明はこれに限らない。 The magnetic force applying means Z-axis elevating mechanism 32 includes a magnetic force applying means elevation driving motor (not shown) that generates driving force for driving the magnetic force applying means 24 in the Z direction, and a magnetic force applying means elevation driving motor. It is mounted on the alignment stage base plate 302 and includes a magnetic force application means elevation driving force transmission mechanism (not shown) for transmitting force to the magnetic force application means 24 . A ball screw, a linear guide, or the like can be used as the magnetic force applying means elevation driving force transmission mechanism, but the present invention is not limited to this.

このように、本実施例では、基板吸着手段Z軸昇降機構31及び磁力印加手段Z軸昇降機構32がアライメントステージ30のベース板302上に設置されるため、アライメントステージ30が水平方向(XYθ方向)に移動するにつれて、基板吸着手段Z軸昇降機構31及び磁力印加手段Z軸昇降機構32も(したがって、基板吸着手段23と磁力印加手段24も)水平方向(XYθ方向)に移動する。その結果、後述するとおり、基板が基板吸着手段23に対して相対的に位置がずれた場合にもこれらの間の相対的な位置を調整することができ、同様に、マスクが磁力印加手段24に対して相対的に位置がずれた場合にも、磁力印加手段24を水平方向(XYθ方向)に移動させてマスクとの相対的な位置を調整できるようになる。 As described above, in this embodiment, the Z-axis elevating mechanism 31 of the substrate attracting means and the Z-axis elevating mechanism 32 of the magnetic force applying means are installed on the base plate 302 of the alignment stage 30, so that the alignment stage 30 can move in the horizontal direction (XYθ direction). ), the substrate adsorption means Z-axis elevation mechanism 31 and the magnetic force application means Z-axis elevation mechanism 32 (therefore, the substrate adsorption means 23 and the magnetic force application means 24) also move in the horizontal direction (XYθ direction). As a result, as will be described later, even if the substrate is displaced relative to the substrate attracting means 23, the relative position between them can be adjusted. Even if the position is shifted relative to the mask, the position relative to the mask can be adjusted by moving the magnetic force applying means 24 in the horizontal direction (XYθ direction).

一方、基板保持台21及びマスク保持台22は水平方向には固定されるように設置され
るが、鉛直方向には昇降可能に設置することができる。この場合、基板保持台21及びマスク保持台22を鉛直方向に昇降させるための昇降機構は真空チャンバ20の外部上面上にアライメントステージと分離、独立されるように設けられる。
On the other hand, the substrate holding table 21 and the mask holding table 22 are installed so as to be fixed in the horizontal direction, but can be installed so as to be able to move up and down in the vertical direction. In this case, an elevating mechanism for vertically elevating the substrate holding table 21 and the mask holding table 22 is provided on the upper surface of the outside of the vacuum chamber 20 so as to be separated and independent from the alignment stage.

即ち、基板保持台21及びマスク保持台22のZ軸昇降機構(不図示)は、アライメントステージベース板302上に設置されるのではなく、アライメントステージ30から分離、独立されて、真空チャンバ20の外部上面に固定された別途のベース板(不図示)に設置される。従って、アライメントステージ30が水平(XYθ)方向に移動しても、基板保持台21及びマスク保持台22は水平(XYθ)方向には移動せず、水平(XYθ)方向には固定される。ここで、基板保持台21及びマスク保持台22のZ軸昇降機構がアライメントステージ30から分離されて独立的に設置されるということは、広い意味では、基板保持台21及びマスク保持台22のZ軸昇降機構がアライメントステージ30上に設置されず、アライメントステージ30から水平(XYθ)方向への移動のための駆動力を受けないという意味であり、狭い意味では、基板保持台21及びマスク保持台22のZ軸昇降機構がアライメントステージ30上に設置されず、水平(XYθ方向)において真空チャンバ20の外部上面に固定されるように設置される(すなわち、水平方向には移動或いは回転しないで固定される)と言う意味である。 That is, the Z-axis elevating mechanism (not shown) of the substrate holding table 21 and the mask holding table 22 is not installed on the alignment stage base plate 302 , but is separated and independent from the alignment stage 30 and installed in the vacuum chamber 20 . It is installed on a separate base plate (not shown) fixed to the outer top surface. Therefore, even if the alignment stage 30 moves in the horizontal (XY.theta.) direction, the substrate holding table 21 and the mask holding table 22 do not move in the horizontal (XY.theta.) direction and are fixed in the horizontal (XY.theta.) direction. In a broad sense, the fact that the Z-axis elevating mechanisms of the substrate holding table 21 and the mask holding table 22 are separated from the alignment stage 30 and installed independently means that the Z axis of the substrate holding table 21 and the mask holding table 22 is in a broad sense. It means that the axis lifting mechanism is not installed on the alignment stage 30 and does not receive the driving force for horizontal (XYθ) movement from the alignment stage 30. In a narrow sense, the substrate holding table 21 and the mask holding table The Z-axis elevating mechanism 22 is not installed on the alignment stage 30, but is installed so as to be fixed to the external upper surface of the vacuum chamber 20 in the horizontal direction (XYθ direction) (i.e., fixed without moving or rotating in the horizontal direction). It means that

<基板に対する基板吸着手段のアライメント及びマスクに対する磁力印加手段のアライメント>
図4を参照して、基板10に対する基板吸着手段23のアライメント及びマスクに対する磁力印加手段24のアライメント工程を説明する。
<Alignment of Substrate Attracting Means with respect to Substrate and Alignment of Magnetic Force Applying Means with respect to Mask>
Alignment of the substrate attracting means 23 with respect to the substrate 10 and alignment of the magnetic force applying means 24 with respect to the mask will be described with reference to FIG.

マスクの交換時期になると、図4(a)に示したとおり、成膜装置2の真空チャンバ20内に新たなマスク221が搬入されて、マスク保持台22上に載置される。 When it is time to replace the mask, a new mask 221 is carried into the vacuum chamber 20 of the film forming apparatus 2 and placed on the mask holder 22, as shown in FIG. 4(a).

続いて、当該マスクを使用して蒸着材料が成膜される基板10が真空チャンバ20内に搬入されて、基板保持台21上に配置される。 Subsequently, the substrate 10 on which the vapor deposition material is deposited using the mask is carried into the vacuum chamber 20 and placed on the substrate holder 21 .

この状態で、基板吸着手段23に形成された基板吸着手段アライメントマークと基板に形成されたアライメントマークとをラフアライメント用カメラ(第1アライメント用カメラ)で撮影して、基板吸着手段23と基板との相対的な位置ずれ量を測定する。基板吸着手段アライメントマークは基板吸着手段23自体に形成されることもできるが、基板吸着手段23と別途のアライメントマークプレートに形成されてもよい。別途のアライメントマークプレートが使われる場合、アライメントマークプレートは基板吸着手段の上面又は下面に付着されるように設置される。また、基板吸着手段23には基板吸着手段23の下に置かれた基板10のアライメントマークが上から見えるように開口が形成される。 In this state, the substrate adsorption means alignment mark formed on the substrate adsorption means 23 and the alignment mark formed on the substrate are photographed by a rough alignment camera (first alignment camera), and the substrate adsorption means 23 and the substrate are photographed. Measure the relative displacement amount of The substrate chucking means alignment mark may be formed on the substrate chucking means 23 itself, or may be formed on an alignment mark plate separate from the substrate chucking means 23 . When a separate alignment mark plate is used, the alignment mark plate is attached to the upper or lower surface of the substrate suction means. Further, an opening is formed in the substrate attracting means 23 so that the alignment mark of the substrate 10 placed under the substrate attracting means 23 can be seen from above.

基板吸着手段23と基板10の相対的な位置がずれていると判明した場合、アライメントステージ30を水平方向に移動させ、基板吸着手段23と基板との水平方向への相対的な位置を調整する。本実施例では、図3を参照して説明したとおり、基板吸着手段Z軸昇降機構31は、アライメントステージ30上に搭載され、基板保持台21又はその昇降機構は、アライメントステージ30から分離、独立して設置されるので、アライメントステージを水平方向に移動させることで、基板吸着手段23と基板10との間の相対的位置ずれを直すことができる。このように、本発明によると、基板吸着手段23と基板10との水平方向の相対的な位置が、搬送ロボット14の基板搬送誤差によって互いにずれた場合にも、基板吸着手段23を基板10に対して位置調整することができるので、基板10全体にわたって基板吸着手段23にきちんと吸着させることができるようになる。 When it is found that the relative positions of the substrate chucking means 23 and the substrate 10 are shifted, the alignment stage 30 is horizontally moved to adjust the relative positions of the substrate chucking means 23 and the substrate in the horizontal direction. . In this embodiment, as described with reference to FIG. 3, the substrate adsorption means Z-axis elevating mechanism 31 is mounted on the alignment stage 30, and the substrate holding table 21 or its elevating mechanism is separated and independent from the alignment stage 30. Therefore, by moving the alignment stage in the horizontal direction, the relative positional deviation between the substrate adsorption means 23 and the substrate 10 can be corrected. As described above, according to the present invention, even when the relative positions of the substrate chucking means 23 and the substrate 10 in the horizontal direction are deviated from each other due to the substrate transfer error of the transfer robot 14, the substrate chucking means 23 can be moved to the substrate 10. Since the position can be adjusted with respect to the substrate 10, the entire substrate 10 can be properly adsorbed by the substrate adsorption means 23.例文帳に追加

基板吸着手段23の基板10に対する位置調整が完了すれば、図4(d)に示したとお
り、基板吸着手段23を基板吸着手段Z軸昇降機構31によって下降させ、基板10を基板吸着手段23に吸着させる。
When the positional adjustment of the substrate adsorption means 23 with respect to the substrate 10 is completed, the substrate adsorption means 23 is lowered by the substrate adsorption means Z-axis elevating mechanism 31 to move the substrate 10 to the substrate adsorption means 23 as shown in FIG. 4(d). Absorb.

続いて、図4(e)に示したとおり、基板吸着手段Z軸昇降機構31を駆動して、基板吸着手段23に吸着された基板10をマスク221上に下降させる。この時、基板保持台21の昇降機構によって基板保持台21を基板吸着手段23の下降に合わせて一緒に下降させることもできる。 Subsequently, as shown in FIG. 4( e ), the substrate adsorption means Z-axis elevating mechanism 31 is driven to lower the substrate 10 adsorbed by the substrate adsorption means 23 onto the mask 221 . At this time, the substrate holding table 21 can also be lowered together with the lowering of the substrate adsorption means 23 by the elevating mechanism of the substrate holding table 21 .

基板吸着手段23に吸着された基板10がファインアライメント工程の計測位置まで下降すると、図4(f)に示したとおり、ファインアライメント用カメラ(第2アライメント用カメラ)を使用して基板10とマスク221のアライメントマークを撮影して、その相対的なずれがあるかを測定する。基板10とマスク221との相対的なずれが閾値を超えると、基板吸着手段Z軸昇降機構31が搭載されたアライメントステージ30を水平方向に移動させて基板10とマスク221の相対的な位置を調整する。 When the substrate 10 sucked by the substrate sucking means 23 descends to the measurement position for the fine alignment process, the fine alignment camera (second alignment camera) is used to separate the substrate 10 and the mask as shown in FIG. 221 alignment marks are photographed to measure whether there is any relative deviation. When the relative displacement between the substrate 10 and the mask 221 exceeds the threshold value, the alignment stage 30 on which the Z-axis lifting mechanism 31 of the substrate attracting means is mounted is horizontally moved to adjust the relative positions of the substrate 10 and the mask 221 . adjust.

基板10とマスク221の相対的位置ずれが閾値内に収まれば、磁力印加手段24を基板上に下降させる前に、磁力印加手段24に形成された磁力印加手段アライメントマークとマスク221のアライメントマークとをラフアライメント用カメラで撮影し、磁力印加手段24とマスク221間の相対的位置ずれ量を測定する。磁力印加手段アライメントマークは、磁力印加手段24自体に形成されることもできるが、磁力印加手段24と別途のアライメントマークプレートに形成されてもよい。別途のアライメントマークプレートが使われる場合、アライメントマークプレートは、磁力印加手段の上面又は下面に付着される。また、磁力印加手段24には磁力印加手段24の下に置かれているマスク221のアライメントマークが上から見えるように開口が形成される。 If the relative positional deviation between the substrate 10 and the mask 221 is within the threshold value, the magnetic force applying means alignment marks formed on the magnetic force applying means 24 and the alignment marks of the mask 221 are aligned before the magnetic force applying means 24 is lowered onto the substrate. is photographed by a camera for rough alignment, and the amount of relative positional deviation between the magnetic force applying means 24 and the mask 221 is measured. The magnetic force applying means alignment mark may be formed on the magnetic force applying means 24 itself, or may be formed on an alignment mark plate separate from the magnetic force applying means 24 . When a separate alignment mark plate is used, the alignment mark plate is attached to the upper or lower surface of the magnetic force applying means. Further, the magnetic force applying means 24 is formed with an opening so that the alignment mark of the mask 221 placed under the magnetic force applying means 24 can be seen from above.

磁力印加手段24とマスク間の相対的位置ずれが閾値を超えると、アライメントステージ30を水平方向に移動させ、マスク221に対する磁力印加手段24の相対的な位置を調整する。本発明によると、磁力印加手段Z軸昇降機構32がアライメントステージ30上に搭載されるので、アライメントステージ30を水平方向に移動させることで、磁力印加手段24をマスク221に対して精密に位置調整できるようになる。 When the relative positional deviation between the magnetic force applying means 24 and the mask exceeds the threshold value, the alignment stage 30 is moved horizontally to adjust the relative position of the magnetic force applying means 24 with respect to the mask 221 . According to the present invention, since the magnetic force applying means Z-axis elevating mechanism 32 is mounted on the alignment stage 30, by moving the alignment stage 30 in the horizontal direction, the position of the magnetic force applying means 24 can be precisely adjusted with respect to the mask 221. become able to.

磁力印加手段24のアライメントが完了すれば、図4(h)に示したとおり、磁力印加手段Z軸昇降機構32を駆動して、磁力印加手段24を基板上に下降させる。基板上に下降された磁力印加手段24は、マスク221に磁力を印加し、マスク221が基板側に引っ張られ、これによって基板とマスクが密着される。本実施例では、磁力印加手段アライメント工程(図4(g))を通じて、磁力印加手段24とこれから磁力を受けるマスク221の相対的位置を精密に調整するので、基板とマスクとの密着精度を高めることができるようになる。 When the alignment of the magnetic force applying means 24 is completed, as shown in FIG. 4(h), the magnetic force applying means Z-axis elevating mechanism 32 is driven to lower the magnetic force applying means 24 onto the substrate. The magnetic force applying means 24 lowered onto the substrate applies a magnetic force to the mask 221, pulling the mask 221 toward the substrate, thereby bringing the substrate and the mask into close contact. In this embodiment, the relative positions of the magnetic force applying means 24 and the mask 221 receiving the magnetic force therefrom are precisely adjusted through the magnetic force applying means alignment step (FIG. 4(g)), so that the adhesion accuracy between the substrate and the mask is enhanced. be able to

続いて、蒸着源25のシャッタを開いて、蒸着源25から蒸発した蒸着材料をマスクを介して基板の下面上に蒸着する(図4(i))。 Subsequently, the shutter of the vapor deposition source 25 is opened, and the vapor deposition material evaporated from the vapor deposition source 25 is vapor-deposited on the lower surface of the substrate through the mask (FIG. 4(i)).

本発明によると、基板吸着手段23の基板に対するアライメント及び磁力印加手段24のマスクに対するアライメントが可能になるので、磁力印加手段/基板吸着手段/基板/マスクの積層体の積層精度が向上し、その結果、成膜精度が向上する。 According to the present invention, the alignment of the substrate attracting means 23 with respect to the substrate and the alignment of the magnetic force applying means 24 with respect to the mask are possible. As a result, film formation accuracy is improved.

<電子デバイスの製造方法>
次に、本実施形態の成膜装置を用いた電子デバイスの製造方法の一例を説明する。以下、電子デバイスの例として有機EL表示装置の構成及び製造方法を例示する。
<Method for manufacturing electronic device>
Next, an example of a method for manufacturing an electronic device using the film forming apparatus of this embodiment will be described. The configuration and manufacturing method of an organic EL display device will be exemplified below as an example of an electronic device.

まず、製造する有機EL表示装置について説明する。図5(a)は有機EL表示装置60の全体図、図5(b)は1画素の断面構造を表している。 First, the organic EL display device to be manufactured will be described. FIG. 5(a) shows an overall view of the organic EL display device 60, and FIG. 5(b) shows a cross-sectional structure of one pixel.

図5(a)に示すように、有機EL表示装置60の表示領域61には、発光素子を複数備える画素62がマトリクス状に複数配置されている。詳細は後で説明するが、発光素子のそれぞれは、一対の電極に挟まれた有機層を備えた構造を有している。なお、ここでいう画素とは、表示領域61において所望の色の表示を可能とする最小単位を指している。本実施例にかかる有機EL表示装置の場合、互いに異なる発光を示す第1発光素子62R、第2発光素子62G、第3発光素子62Bの組合せにより画素62が構成されている。画素62は、赤色発光素子と緑色発光素子と青色発光素子の組合せで構成されることが多いが、黄色発光素子とシアン発光素子と白色発光素子の組合せでもよく、少なくとも1色以上であれば特に制限されるものではない。 As shown in FIG. 5A, in a display region 61 of an organic EL display device 60, a plurality of pixels 62 each having a plurality of light emitting elements are arranged in a matrix. Although details will be described later, each of the light emitting elements has a structure including an organic layer sandwiched between a pair of electrodes. The term "pixel" as used herein refers to a minimum unit capable of displaying a desired color in the display area 61. FIG. In the case of the organic EL display device according to this embodiment, the pixel 62 is configured by a combination of the first light-emitting element 62R, the second light-emitting element 62G, and the third light-emitting element 62B that emit light different from each other. The pixel 62 is often composed of a combination of a red light emitting element, a green light emitting element and a blue light emitting element, but may be a combination of a yellow light emitting element, a cyan light emitting element and a white light emitting element. It is not limited.

図5(b)は、図5(a)のA-B線における部分断面模式図である。画素62は、基板63上に、第1電極(陽極)64と、正孔輸送層65と、発光層66R、66G、66Bのいずれかと、電子輸送層67と、第2電極(陰極)68と、を備える有機EL素子を有している。これらのうち、正孔輸送層65、発光層66R、66G、66B、電子輸送層67が有機層に当たる。また、本実施形態では、発光層66Rは赤色を発する有機EL層、発光層66Gは緑色を発する有機EL層、発光層66Bは青色を発する有機EL層である。発光層66R、66G、66Bは、それぞれ赤色、緑色、青色を発する発光素子(有機EL素子と記述する場合もある)に対応するパターンに形成されている。また、第1電極64は、発光素子毎に分離して形成されている。正孔輸送層65と電子輸送層67と第2電極68は、複数の発光素子62R、62G、62Bと共通で形成されていてもよいし、発光素子毎に形成されていてもよい。なお、第1電極64と第2電極68とが異物によってショートするのを防ぐために、第1電極64間に絶縁層69が設けられている。さらに、有機EL層は水分や酸素によって劣化するため、水分や酸素から有機EL素子を保護するための保護層70が設けられている。 FIG. 5(b) is a schematic partial cross-sectional view taken along line AB in FIG. 5(a). The pixel 62 includes a first electrode (anode) 64, a hole transport layer 65, any one of the light emitting layers 66R, 66G, and 66B, an electron transport layer 67, and a second electrode (cathode) 68 on a substrate 63. and an organic EL element. Among these layers, the hole transport layer 65, the light emitting layers 66R, 66G and 66B, and the electron transport layer 67 correspond to organic layers. In this embodiment, the light emitting layer 66R is an organic EL layer that emits red, the light emitting layer 66G is an organic EL layer that emits green, and the light emitting layer 66B is an organic EL layer that emits blue. The light-emitting layers 66R, 66G, and 66B are formed in patterns corresponding to light-emitting elements (also referred to as organic EL elements) that emit red, green, and blue, respectively. Also, the first electrode 64 is formed separately for each light emitting element. The hole transport layer 65, the electron transport layer 67, and the second electrode 68 may be formed in common with the plurality of light emitting elements 62R, 62G, and 62B, or may be formed for each light emitting element. An insulating layer 69 is provided between the first electrodes 64 to prevent short-circuiting between the first electrodes 64 and the second electrodes 68 due to foreign matter. Furthermore, since the organic EL layer is deteriorated by moisture and oxygen, a protective layer 70 is provided to protect the organic EL element from moisture and oxygen.

図5(b)では正孔輸送層65や電子輸送層67が一つの層で示されているが、有機EL表示素子の構造によって、正孔ブロック層や電子ブロック層を含む複数の層で形成されてもよい。また、第1電極64と正孔輸送層65との間には、第1電極64から正孔輸送層65への正孔の注入が円滑に行われるようにすることのできるエネルギーバンド構造を有する正孔注入層を形成することもできる。同様に、第2電極68と電子輸送層67の間にも電子注入層が形成することができる。 In FIG. 5B, the hole transport layer 65 and the electron transport layer 67 are shown as one layer, but depending on the structure of the organic EL display element, they may be formed of multiple layers including a hole blocking layer and an electron blocking layer. may be In addition, there is an energy band structure between the first electrode 64 and the hole transport layer 65 that can facilitate injection of holes from the first electrode 64 to the hole transport layer 65 . A hole injection layer can also be formed. Similarly, an electron injection layer can be formed between the second electrode 68 and the electron transport layer 67 as well.

次に、有機EL表示装置の製造方法の例について具体的に説明する。 Next, an example of a method for manufacturing an organic EL display device will be specifically described.

まず、有機EL表示装置を駆動するための回路(不図示)及び第1電極64が形成された基板63を準備する。 First, a substrate 63 on which a circuit (not shown) for driving the organic EL display device and a first electrode 64 are formed is prepared.

第1電極64が形成された基板63の上にアクリル樹脂をスピンコートで形成し、アクリル樹脂をリソグラフィ法により、第1電極64が形成された部分に開口が形成されるようにパターニングし絶縁層69を形成する。この開口部が、発光素子が実際に発光する発光領域に相当する。 An acrylic resin is formed by spin coating on the substrate 63 on which the first electrode 64 is formed, and the acrylic resin is patterned by lithography so that an opening is formed in the portion where the first electrode 64 is formed, thereby forming an insulating layer. form 69. This opening corresponds to a light emitting region where the light emitting element actually emits light.

絶縁層69がパターニングされた基板63を第1の有機材料成膜装置に搬入し、基板保持台及び基板吸着手段にて基板を保持し、正孔輸送層65を、表示領域の第1電極64の上に共通する層として成膜する。正孔輸送層65は真空蒸着により成膜される。実際には、正孔輸送層65は表示領域61よりも大きなサイズに形成されるため、高精細なマスクは不要である。 The substrate 63 on which the insulating layer 69 is patterned is carried into the first organic material deposition apparatus, the substrate is held by the substrate holding table and the substrate adsorption means, and the hole transport layer 65 is attached to the first electrode 64 in the display area. is deposited as a common layer on the The hole transport layer 65 is deposited by vacuum deposition. In practice, the hole transport layer 65 is formed to have a size larger than that of the display area 61, so a high-definition mask is not required.

次に、正孔輸送層65までが形成された基板63を第2の有機材料成膜装置に搬入し、基板保持台及び基板吸着手段にて保持する。基板とマスクとのアライメントを行い、基板をマスクの上に載置し、基板63の赤色を発する素子を配置する部分に、赤色を発する発光層66Rを成膜する。 Next, the substrate 63 on which the holes up to the hole transport layer 65 are formed is carried into the second organic material film forming apparatus and held by the substrate holding table and the substrate adsorption means. The substrate and the mask are aligned, the substrate is placed on the mask, and a light-emitting layer 66R emitting red is formed on a portion of the substrate 63 where the element emitting red is to be arranged.

本発明によると、基板吸着手段23及び磁力印加手段24の駆動機構を、アライメントステージ30に搭載することで、基板吸着手段23、磁力印加手段24、基板10、マスク221間の相対的な位置を効果的に調整することができ、これによって成膜不良を効果的に低減させることができる。 According to the present invention, by mounting the driving mechanisms of the substrate attracting means 23 and the magnetic force applying means 24 on the alignment stage 30, the relative positions of the substrate attracting means 23, the magnetic force applying means 24, the substrate 10, and the mask 221 can be adjusted. It can be adjusted effectively, thereby effectively reducing film formation defects.

発光層66Rの成膜と同様に、第3の有機材料成膜装置により緑色を発する発光層66Gを成膜し、さらに第4の有機材料成膜装置により青色を発する発光層66Bを成膜する。発光層66R、66G、66Bの成膜が完了した後、第5の成膜装置により表示領域61の全体に電子輸送層67を成膜する。電子輸送層67は、3色の発光層66R、66G、66Bに共通の層として形成される。 Similarly to the deposition of the light-emitting layer 66R, the third organic material deposition apparatus is used to deposit a green-emitting light-emitting layer 66G, and the fourth organic material deposition apparatus is used to deposit a blue-emitting light-emitting layer 66B. . After the formation of the light-emitting layers 66R, 66G, and 66B is completed, the electron transport layer 67 is formed over the entire display area 61 by the fifth film forming apparatus. The electron transport layer 67 is formed as a layer common to the three color light-emitting layers 66R, 66G, and 66B.

電子輸送層67まで形成された基板を金属性蒸着材料成膜装置で移動させて第2電極68を成膜する。 The substrate on which the electron transport layer 67 has been formed is moved by a metallic evaporation material film-forming apparatus to form the second electrode 68 as a film.

その後プラズマCVD装置に移動して保護層70を成膜して、有機EL表示装置60が完成する。 After that, the substrate is moved to a plasma CVD apparatus to form a protective layer 70, and the organic EL display device 60 is completed.

絶縁層69がパターニングされた基板63を成膜装置に搬入してから保護層70の成膜が完了するまでは、水分や酸素を含む雰囲気にさらしてしまうと、有機EL材料からなる発光層が水分や酸素によって劣化してしまうおそれがある。従って、本例において、成膜装置間の基板の搬入搬出は、真空雰囲気又は不活性ガス雰囲気の下で行われる。 If the substrate 63 on which the insulating layer 69 is patterned is carried into the film forming apparatus and is exposed to an atmosphere containing moisture and oxygen until the film formation of the protective layer 70 is completed, the light emitting layer made of the organic EL material will be damaged. It may deteriorate due to moisture and oxygen. Therefore, in this example, substrates are carried in and out between film forming apparatuses under a vacuum atmosphere or an inert gas atmosphere.

前記実施例は本発明の一例を示すものでしかなく、本発明が適用可能な構成は前記実施例の構成に限定されないし、その技術思想の範囲内で適宜に変形しても良い。 The above-described embodiment merely shows an example of the present invention, and the configuration to which the present invention can be applied is not limited to the configuration of the above-described embodiment, and may be appropriately modified within the scope of the technical idea.

10:基板
20:真空チャンバ
21:基板保持台
22:マスク保持台
23:基板吸着手段
24:磁力印加手段
30:アライメントステージ
31:基板吸着手段Z軸昇降機構
32:磁力印加手段Z軸昇降機構
10: Substrate 20: Vacuum chamber 21: Substrate holder 22: Mask holder 23: Substrate attraction means 24: Magnetic force application means 30: Alignment stage 31: Substrate attraction means Z-axis elevation mechanism 32: Magnetic force application means Z-axis elevation mechanism

Claims (15)

マスクを介して基板に蒸着材料を成膜するための成膜装置であって、
蒸着工程が行われる空間を定める真空チャンバと、
前記真空チャンバ内に設置され、基板を吸着するための基板吸着手段と、
前記真空チャンバ内で前記基板吸着手段の上に設けられ、マスクに磁力を印加するための磁力印加手段と、
前記基板吸着手段の下で基板を保持するための基板保持手段であって、第1方向、前記第1方向と交差する第2方向、及び、前記第1方向及び前記第2方向と交差する第3方向を軸にした回転方向に固定されるように設置された基板保持手段と、
前記基板保持手段の下に設置され、マスクを保持するためのマスク保持手段であって、前記第1方向、前記第2方向、及び前記回転方向に固定されるように設置されたマスク保持手段と、
前記真空チャンバの第1外部面上に設置され、前記磁力印加手段を前記マスクに対して位置調整するために、前記基板保持手段に保持された基板が位置調整されて吸着された前記基板吸着手段及び前記磁力印加手段を、前記第1方向、前記2方向、及び、前記3方向を軸にした回転方向中少なくとも一つの方向に共通に移動或いは回転させるためのアライメントステージと、
前記基板吸着手段を前記第3方向に移動させるための基板吸着手段駆動手段と、
前記磁力印加手段を前記第3方向に移動させるための磁力印加手段駆動手段と、
を含み、
前記基板吸着手段駆動手段及び前記磁力印加手段駆動手段は、前記アライメントステージ上に搭載される成膜装置。
A film forming apparatus for forming a film of a vapor deposition material on a substrate through a mask,
a vacuum chamber defining a space in which the deposition process takes place;
a substrate adsorption means installed in the vacuum chamber for adsorbing a substrate;
a magnetic force applying means provided on the substrate attracting means in the vacuum chamber for applying a magnetic force to the mask;
A substrate holding means for holding a substrate under the substrate adsorption means , comprising a first direction, a second direction intersecting the first direction, and a second direction intersecting the first direction and the second direction. a substrate holding means installed so as to be fixed in a rotational direction about three directions ;
a mask holding means installed under the substrate holding means for holding a mask, the mask holding means being installed so as to be fixed in the first direction, the second direction, and the rotational direction ; ,
The substrate attracting means which is installed on the first outer surface of the vacuum chamber and attracts the substrate held by the substrate holding means after the position thereof is adjusted in order to adjust the position of the magnetic force applying means with respect to the mask. and an alignment stage for commonly moving or rotating the magnetic force applying means in at least one of rotation directions about the first direction, the second direction, and the third direction;
substrate adsorption means driving means for moving the substrate adsorption means in the third direction;
a magnetic force applying means driving means for moving the magnetic force applying means in the third direction;
including
The substrate attracting means driving means and the magnetic force applying means driving means are a film forming apparatus mounted on the alignment stage .
前記基板保持手段を前記第3方向に移動させるための基板保持手段駆動手段をさらに含み、
前記基板保持手段駆動手段は、前記真空チャンバの前記第1外部面上に前記アライメントステージから分離され、独立的に設けられる請求項1に記載の成膜装置。
further comprising substrate holding means driving means for moving the substrate holding means in the third direction;
2. The film forming apparatus according to claim 1 , wherein said substrate holding means driving means is provided independently from said alignment stage on said first outer surface of said vacuum chamber.
前記マスク保持手段を前記第3方向に移動させるためのマスク保持手段駆動手段をさら
に含み、
前記マスク保持手段駆動手段は、前記真空チャンバの前記第1外部面上に前記アライメントステージから分離され、独立的に設けられる請求項1又は2に記載の成膜装置。
further comprising mask holding means driving means for moving the mask holding means in the third direction;
3. The film forming apparatus according to claim 1, wherein said mask holding means driving means is provided independently from said alignment stage on said first outer surface of said vacuum chamber.
前記基板吸着手段には基板吸着手段アライメントマークが設けられる請求項1~のいずれか一項に記載の成膜装置。 4. The film forming apparatus according to claim 1 , wherein the substrate chucking means is provided with a substrate chucking means alignment mark. 前記磁力印加手段には磁力印加手段アライメントマークが設けられる請求項1~のいずれか一項に記載の成膜装置。 5. The film forming apparatus according to claim 1 , wherein the magnetic force applying means is provided with a magnetic force applying means alignment mark. 前記真空チャンバの前記第1外部面上に透明な窓を介して設置され、前記基板吸着手段を基板に対して位置調整するために、前記基板吸着手段アライメントマークと基板に形成されたアライメントマークとを撮影する第1アライメント用カメラをさらに含む請求項に記載の成膜装置。 and an alignment mark formed on the substrate and the substrate chucking means alignment mark installed on the first outer surface of the vacuum chamber through a transparent window for adjusting the position of the substrate chucking means with respect to the substrate. 5. The film forming apparatus according to claim 4 , further comprising a first alignment camera for photographing. 前記真空チャンバの前記第1外部面上に透明な窓を介して設置され、前記磁力印加手段をマスクに対して位置調整するために、前記磁力印加手段アライメントマークとマスクに形成されたアライメントマークとを撮影する第1アライメント用カメラをさらに含む請求項に記載の成膜装置。 a magnetic force applying means alignment mark and an alignment mark formed on a mask, disposed on the first outer surface of the vacuum chamber through a transparent window, for aligning the magnetic force applying means with respect to the mask; 6. The film forming apparatus according to claim 5 , further comprising a first alignment camera for photographing. 前記真空チャンバの前記第1外部面上に透明な窓を介して設置され、前記基板吸着手段に吸着された基板をマスクに対して位置調整するために、基板及びマスクに形成されたアライメントマークを撮影する第2アライメント用カメラをさらに含む請求項又はに記載の成膜装置。 Alignment marks formed on the substrate and the mask are placed on the first outer surface of the vacuum chamber through a transparent window and the substrate attracted by the substrate attracting means is aligned with the mask. 8. The film forming apparatus according to claim 6 , further comprising a second alignment camera for photographing. マスクを介して基板に蒸着材料を蒸着するための成膜方法であって、
請求項1乃至請求項のいずれか一項に記載の成膜装置の真空チャンバ内に搬入されたマスクをマスク保持手段に載置する段階、
前記成膜装置の前記真空チャンバ内に基板を搬入して基板保持手段に載置する段階、
基板吸着手段を前記基板保持手段に載置された基板に対して位置調整する基板吸着手段アライメント段階、
位置調整された前記基板吸着手段によって前記基板を吸着させる段階、
前記基板吸着手段に吸着された基板を前記マスク保持手段に載置されたマスクに対して位置調整する基板アライメント段階、
磁力印加手段を前記マスクに対して位置調整する磁力印加手段アライメント段階、
位置調整された前記基板を前記マスク上に載置する段階、
位置調整された前記磁力印加手段を前記基板の上方に移動させて前記基板と前記マスクを密着させる段階、及び
マスクを介して基板上に蒸着材料を成膜する段階
を含む成膜方法。
A film formation method for depositing a deposition material on a substrate through a mask, comprising:
The step of placing the mask carried into the vacuum chamber of the film forming apparatus according to any one of claims 1 to 8 on the mask holding means;
loading a substrate into the vacuum chamber of the film forming apparatus and placing it on a substrate holding means;
a substrate chucking means alignment step of adjusting the position of the substrate chucking means with respect to the substrate placed on the substrate holding means;
adsorbing the substrate by the position-adjusted substrate adsorption means;
a substrate alignment step of adjusting the position of the substrate sucked by the substrate sucking means with respect to the mask placed on the mask holding means;
a magnetic force applying means alignment step of aligning the magnetic force applying means with respect to the mask;
placing the aligned substrate on the mask;
A film forming method comprising: moving the position-adjusted magnetic force applying means above the substrate to bring the substrate and the mask into close contact; and forming a film of a vapor deposition material on the substrate through the mask.
前記磁力印加手段アライメント段階は、前記基板アライメント段階の後、前記基板を前記マスク上に載置する段階の前に行われ、前記基板とマスクを密着させる段階は、前記基板を前記マスク上に載置する段階の後、前記マスクを介して基板上に蒸着材料を成膜する段階の前に行われる請求項に記載の成膜方法。 The step of aligning the magnetic force applying means is performed after the step of aligning the substrate and before the step of placing the substrate on the mask. 10. The film forming method according to claim 9 , which is performed after the step of placing and before the step of forming a film of the vapor deposition material on the substrate through the mask. 前記基板吸着手段アライメント段階においては、基板吸着手段駆動手段が搭載されたアライメントステージを前記基板保持手段の上に載置された基板に対して前記第1方向、前記第2方向、及び前記回転方向中少なくとも一つの方向に相対的に移動又は回転させることにより、前記基板吸着手段を前記基板に対して位置調整する請求項又は10に記載の
成膜方法。
In the step of aligning the substrate chucking means, the alignment stage on which the driving means for the substrate chucking means is mounted is moved with respect to the substrate placed on the substrate holding means in the first direction, the second direction, and the rotating direction. 11. The film forming method according to claim 9 or 10 , wherein the position of said substrate adsorption means is adjusted with respect to said substrate by relatively moving or rotating it in at least one direction.
前記磁力印加手段アライメント段階においては、磁力印加手段駆動手段が搭載されたアライメントステージを前記マスク保持手段上に載置されたマスクに対して前記第1方向、前記第2方向及び前記回転方向中少なくとも一つの方向に相対的に移動又は回転させることにより、前記磁力印加手段を前記マスクに対して位置調整する請求項10に記載の成膜方法。 In the step of aligning the magnetic force applying means, the alignment stage mounted with the driving means for the magnetic force applying means is rotated with respect to the mask placed on the mask holding means in at least one of the first direction, the second direction and the rotating direction. 11. The film forming method according to claim 10 , wherein the position of said magnetic force applying means is adjusted with respect to said mask by relatively moving or rotating it in one direction. 前記基板吸着手段アライメント段階においては、前記基板吸着手段に設けられたアライメントマーク及び前記基板に形成されたアライメントマークを撮影して前記基板吸着手段と前記基板間の相対的な位置ずれを測定する請求項11に記載の成膜方法。 In the step of aligning the substrate chucking means, an alignment mark provided on the substrate chucking means and an alignment mark formed on the substrate are photographed to measure a relative positional deviation between the substrate chucking means and the substrate. Item 12. The film forming method according to item 11 . 前記磁力印加手段アライメント段階においては、前記磁力印加手段に設けられたアライメントマーク及び前記マスクに形成されたアライメントマークを撮影して前記磁力印加手段と前記マスク間の相対的な位置ずれを測定する請求項12に記載の成膜方法。 In the step of aligning the magnetic force applying means, an alignment mark provided on the magnetic force applying means and an alignment mark formed on the mask are photographed to measure a relative positional deviation between the magnetic force applying means and the mask. Item 13. The film forming method according to Item 12 . 請求項14のいずれか一項に記載の成膜方法を用いて電子デバイスを製造する方法。 A method of manufacturing an electronic device using the film forming method according to any one of claims 9 to 14 .
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