WO2016199759A1 - Substrate holding device, film forming apparatus and substrate holding method - Google Patents

Substrate holding device, film forming apparatus and substrate holding method Download PDF

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Publication number
WO2016199759A1
WO2016199759A1 PCT/JP2016/066899 JP2016066899W WO2016199759A1 WO 2016199759 A1 WO2016199759 A1 WO 2016199759A1 JP 2016066899 W JP2016066899 W JP 2016066899W WO 2016199759 A1 WO2016199759 A1 WO 2016199759A1
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WO
WIPO (PCT)
Prior art keywords
plate
substrate
intermediate plate
holding
mask
Prior art date
Application number
PCT/JP2016/066899
Other languages
French (fr)
Japanese (ja)
Inventor
あゆみ 織部
宗源 萩原
博文 梅村
憲昭 糟谷
潤一郎 小池
和彦 小泉
英二 藤野
Original Assignee
株式会社アルバック
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 株式会社アルバック filed Critical 株式会社アルバック
Priority to JP2017523645A priority Critical patent/JP6500103B2/en
Priority to CN201680034320.6A priority patent/CN107710397B/en
Priority to SG11201710300SA priority patent/SG11201710300SA/en
Priority to KR1020177028877A priority patent/KR102091560B1/en
Publication of WO2016199759A1 publication Critical patent/WO2016199759A1/en

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/757Means for aligning
    • H01L2224/75733Magnetic holding means

Definitions

  • the present invention relates to a substrate holding apparatus for holding a film forming mask and a substrate using a magnet, a film forming apparatus provided with the substrate, and a substrate holding method.
  • Patent Document 1 discloses an in-line film deposition method in which a vapor deposition material generated in a deposition source is deposited on a deposition surface while a substrate having a plate-like mask disposed on the deposition surface is transported in a deposition chamber. An apparatus is described.
  • Patent Document 2 describes that a mask pressing mechanism for pressing the mask against the substrate is provided on the evaporation source side of the mask so that the mask is brought into close contact with the substrate.
  • an object of the present invention is to provide a substrate holding apparatus, a film forming apparatus, and a substrate that can ensure adhesion between the mask and the substrate without installing a mechanism portion on the evaporation source side of the mask. It is to provide a holding method.
  • a substrate holding apparatus includes a mask plate, an intermediate plate, a holding plate, and a pressing mechanism.
  • the mask plate is made of a magnetic material.
  • the intermediate plate has a first surface facing the mask plate and a second surface opposite to the first surface, and the first surface is disposed on the mask plate. It is configured to be able to contact the substrate.
  • the holding plate supports the intermediate plate so as to be relatively movable in an axial direction orthogonal to the mask plate.
  • the holding plate includes a magnet configured to magnetically attract the mask plate through the intermediate plate and the substrate.
  • the pressing mechanism is disposed to face the second surface. The pressing mechanism is configured to be able to press at least a part of the second surface along the axial direction.
  • the intermediate plate has a function of maintaining the planar state of the substrate by contacting the non-deposition surface of the substrate facing the mask plate.
  • the larger the intermediate plate or the smaller the thickness of the intermediate plate the lower the flatness of the intermediate plate itself due to insufficient strength of the intermediate plate or deformation due to heat input during film formation. Therefore, the substrate holding device includes a pressing mechanism that presses at least a part of the intermediate plate toward the mask plate. As a result, the flatness of the intermediate plate is increased. As a result, the flatness of the substrate in contact with the intermediate plate is also maintained, and good adhesion to the mask plate is ensured.
  • the intermediate plate can be thinned, it is possible to ensure a stable adhesion between the mask plate and the substrate regardless of the substrate size.
  • the pressing mechanism is disposed to face the second surface of the intermediate plate, so that the mask plate and the substrate are in close contact with each other without installing any mechanism portion on the evaporation source side of the mask plate. Can be achieved. For this reason, the adhesion effect between the mask plate and the substrate can be stably maintained without depending on the aperture ratio of the mask plate or the arrangement form of the mask openings.
  • the above axial direction is typically an axial direction parallel to the direction of gravity.
  • the pressing mechanism can prevent a decrease in flatness due to the bending deformation of the substrate or the intermediate plate, so that it is possible to stably obtain a desired film forming accuracy.
  • the pressing mechanism is typically installed on the holding plate. By installing the pressing mechanism on the holding plate, it is possible to simplify the apparatus configuration and stably press the desired position of the intermediate plate.
  • the pressing mechanism may include a plurality of pressing units configured to be able to press a plurality of locations on the second surface.
  • the pressing position of the intermediate plate is not particularly limited, and typically includes a central portion and / or a peripheral portion of the intermediate plate (second surface).
  • the intermediate plate may be configured to be movable along the axial direction between a contact position and a holding position.
  • the contact position is a position where at least a part of the first surface is in contact with the substrate, and a relative distance to the holding plate is a first distance, and the holding position is a relative distance to the holding plate.
  • the position is a second distance that is smaller than the first distance.
  • the pressing mechanism presses the second surface along the axial direction while the intermediate plate moves from the contact position to the holding position.
  • the second surface is pressed by the pressing mechanism while the magnet approaches the second surface of the intermediate plate in a state where the first surface of the intermediate plate is in contact with the substrate. Therefore, the substrate can be brought into close contact with the mask plate with high flatness without causing a positional shift of the substrate with respect to the mask plate.
  • the pressing unit includes, for example, a pressing element and an elastic member.
  • the pressing element is disposed to face the second surface.
  • the elastic member is disposed between the pressing element and the second surface, and is configured to be elastically deformable in the axial direction. This makes it possible to stably apply a desired pressing force to a plurality of positions on the intermediate plate, so that the intermediate plate and the substrate can be maintained at a target flatness.
  • the constituent material of the intermediate plate is not particularly limited, and may be a magnetic material or a non-magnetic material.
  • the intermediate plate is made of a magnetic material, a magnetic path through which the magnetic field from the magnet passes is formed, so that the magnetic attractive force on the mask plate can be increased.
  • the intermediate plate is made of a nonmagnetic material, when releasing the holding of the substrate by the magnet after film formation, the holding plate can be separated from the mask plate while the intermediate plate is in contact with the substrate.
  • a film formation apparatus includes a film formation chamber, a film formation source, a mask plate, an intermediate plate, a holding plate, and a pressing mechanism.
  • the film formation source is disposed in the film formation chamber.
  • the mask plate is disposed to face the film forming source and is made of a magnetic material.
  • the intermediate plate has a first surface facing the mask plate and a second surface opposite to the first surface, and the first surface is disposed on the mask plate. It is configured to be able to contact the substrate.
  • the holding plate supports the intermediate plate so as to be relatively movable in an axial direction perpendicular to the mask plate.
  • the holding plate includes a magnet configured to magnetically attract the mask plate through the intermediate plate and the substrate.
  • the pressing mechanism is disposed to face the second surface. The pressing mechanism is configured to be able to press at least a part of the second surface along the axial direction.
  • a substrate holding method includes disposing a substrate on a mask plate made of a magnetic material. An intermediate plate is brought into contact with the substrate. At least a part of the intermediate plate is pressed toward the mask plate by the pressing mechanism. By disposing a holding plate having a magnet for magnetically attracting the mask plate on the intermediate plate, the intermediate plate, the substrate and the mask plate are integrally held.
  • the adhesion between the mask and the substrate can be ensured.
  • FIG. 1 It is a schematic sectional drawing which shows the film-forming apparatus which concerns on one Embodiment of this invention. It is a schematic enlarged view of the substrate holding apparatus in the said film-forming apparatus, and has shown the state before board
  • substrate holding apparatus it is a side view which shows roughly the positional relationship with a mask plate, a board
  • substrate holding apparatus It is a schematic sectional side view which shows the example of 1 structure of the press mechanism in the said board
  • FIG. 1 is a schematic sectional view showing a film forming apparatus 100 according to an embodiment of the present invention.
  • the X, Y, and Z axes indicate three axial directions orthogonal to each other, the X and Y axes indicate the horizontal direction, and the Z axis indicates the height direction (the same applies to the following drawings). ).
  • the film forming apparatus 100 is configured as a vacuum vapor deposition apparatus, and includes a film forming chamber 10, an evaporation source 20 (film forming source), and a substrate holding device 30.
  • the film forming chamber 10 is composed of a vacuum chamber. That is, a vacuum pump (not shown) is connected to the film forming chamber 10 so that the inside of the film forming chamber 10 can be evacuated and maintained in a predetermined reduced pressure atmosphere.
  • a vacuum pump (not shown) is connected to the film forming chamber 10 so that the inside of the film forming chamber 10 can be evacuated and maintained in a predetermined reduced pressure atmosphere.
  • the film forming apparatus 100 includes, for example, a cluster-type vacuum film forming apparatus in which a plurality of processing chambers including the film forming chamber 10 are arranged through a gate valve with a transfer chamber as a center.
  • the substrate W is transferred from the transfer chamber to the film forming chamber 10 or from the film forming chamber 10 to the transfer chamber via a substrate transfer robot (not shown) installed in the transfer chamber. Is done.
  • the evaporation source 20 is for generating vapor of an evaporation material (or evaporation material), and various types of evaporation sources such as a resistance heating type, an induction heating type, and an electron beam heating type are applicable.
  • a metal material, a metal compound material such as metal oxide or metal sulfide, a synthetic resin material, an organic EL material, or the like is used as the vapor deposition material.
  • the evaporation source 20 may include a shutter capable of preventing the vapor of the vapor deposition material from reaching the substrate W held by the substrate holding device 30. Further, the evaporation source 20 may be fixed to the bottom of the film forming chamber 10 or may be configured to be movable relative to the bottom of the film forming chamber 10 and the substrate holding device 30 in the horizontal direction.
  • the substrate holding device 30 is arranged at a position immediately above the evaporation source 20 and is configured to be able to hold the substrate W to be deposited at a position facing the evaporation source 20.
  • the substrate holding device 30 includes a mask member 31, an intermediate plate 32, a holding plate 33, and a pressing mechanism 34.
  • FIG. 2 and 3 are schematic enlarged views of the substrate holding device 30.
  • FIG. 2 shows a state before the substrate W is held
  • FIG. 3 shows a state where the substrate W is held.
  • the mask member 31 is disposed to face the evaporation source 20.
  • the mask member 31 is fixed inside the film forming chamber 10 via a fixing unit (not shown).
  • the mask member 31 includes a mask plate 311 that faces the film formation surface of the substrate W, and a frame portion 312 that supports the periphery of the mask plate 311.
  • the mask plate 311 is a thin plate made of a magnetic material having a predetermined opening pattern.
  • the constituent material of the mask plate 311 is not particularly limited, and typically, a ferromagnetic material having high permeability characteristics (soft magnetic characteristics) such as Fe, Co, Ni, or an alloy thereof is used. Further, in order to suppress thermal deformation of the mask plate 311 due to heat input during film formation from the film formation source (evaporation source 20), an alloy such as Invar having a small thermal expansion coefficient is used as a constituent material of the mask plate 311. May be.
  • the mask plate 311 is formed in a size that can cover the film formation surface of the substrate W.
  • the size of the substrate W is not particularly limited, and in this embodiment, a fourth to fifth generation (G4 to G5) rectangular glass substrate (for example, 680 mm to 1200 mm in length and 730 mm to 1300 mm in width) is used.
  • the frame unit 312 is fixed to the fixed unit, and holds the mask plate 311 in a horizontal posture.
  • the frame portion 312 may be made of a magnetic material similarly to the mask plate 311, but is not limited thereto, and may be made of a nonmagnetic material.
  • the intermediate plate 32 is disposed above the mask member 31 and is formed of a rectangular plate material having a predetermined thickness larger than that of the substrate W.
  • the intermediate plate 32 is made of a nonmagnetic material such as austenitic stainless steel, aluminum, or copper.
  • the intermediate plate 32 has a lower surface 32a (first surface) facing the mask plate 311 and an upper surface 32b (second surface) on the opposite side.
  • the lower surface 32a of the intermediate plate 32 is configured to be able to come into contact with the back surface (non-deposition surface) of the substrate W facing the mask plate 311 when the substrate is held (FIG. 3).
  • a cooling water circulation channel may be formed inside the intermediate plate 32. Thereby, an excessive temperature rise of the substrate W during film formation can be suppressed, and the substrate W can be cooled to a predetermined temperature or lower.
  • the holding plate 33 is disposed above the intermediate plate 32 and supports the intermediate plate 32 so as to be relatively movable in an axial direction (Z-axis direction) orthogonal to the mask plate 31.
  • the holding plate 33 includes a magnet 331 configured to magnetically attract the mask plate 311 via the intermediate plate 32 and the substrate W.
  • the magnet 331 is configured by a plate-like permanent magnet that is disposed on the lower surface of the holding plate 33 and is larger than the substrate W.
  • the holding plate 33 is configured to be movable relative to the mask member 31 in the Z-axis direction via a lifting mechanism (not shown). In the state before holding the substrate W, the holding plate 33 takes a position (upward position) separated from the mask plate 311 as shown in FIG. 2, and when holding the substrate W, as shown in FIG. A position close to the mask plate 311 (downward position) is taken. As will be described later, the intermediate plate 32 is configured such that the lower surface 32a is separated from the mask plate 311 by a predetermined distance in the raised position, and the lower surface 32a is in contact with the mask plate 311 (or the substrate W) in the lowered position. .
  • the pressing mechanism 34 includes a plurality of pressing units 35 configured to be able to press at least a part of the upper surface 32b of the intermediate plate 32 along the Z-axis direction. As will be described later, the plurality of pressing units 35 are respectively installed on the holding plate 33 so as to face the upper surface 32b of the intermediate plate 32.
  • the pressing mechanism 34 is for preventing a gap from being generated between the substrate W and the intermediate plate 32 due to bending or deformation of the intermediate plate 32, and when the holding plate 33 reaches the lowered position, the non-loading of the substrate W is not performed. It has a function of correcting the shape of the intermediate plate 32 to be flat by pressing the upper surface of the intermediate plate 32 in contact with the vapor deposition surface with a predetermined pressure.
  • FIG. 4 is a side view schematically showing the positional relationship between the mask plate 311, the substrate W, the intermediate plate 32, and the magnet 331 (holding plate 33).
  • the holding plate 33 moves to the lowered position so that the intermediate plate 32 comes into contact with the non-deposition surface of the substrate W, and the mask plate 311 is magnetically attracted by the magnet 331, thereby The substrate W is sandwiched between the plate 311.
  • the plurality of pressing units 35 are configured to be able to partially press the upper surface of the intermediate plate 32, respectively. Since the pressing mechanism 34 includes the plurality of pressing units 35, the flatness of the intermediate plate 32 can be easily improved.
  • the pressing position of the intermediate plate 32 (the position where the pressing unit 35 is disposed) is not particularly limited, and typically, the central portion or the peripheral portion of the intermediate plate 32, or both of them may be mentioned.
  • FIG. 7 to 9 are side sectional views schematically showing the configuration of the pressing unit 35.
  • FIG. 7 shows a state before holding the substrate W
  • FIG. 8 shows a state immediately before holding the substrate
  • FIG. Reference numeral 9 denotes a state where the substrate W is held.
  • 7 shows a state in which the substrate W and the holding plate 33 are lowered from the raised position of the holding plate 33 shown in FIG. 2, the substrate W is placed on the upper surface of the mask plate 311, and the intermediate plate is The state which is not contacting the board
  • the intermediate plate 32 is drawn in a slightly deformed state (a state in which bending occurs), and holds the substrate W shown in FIG. In the state, the intermediate plate 32 is drawn in a state in which the deflection of the intermediate plate 32 is corrected (planar state).
  • a plurality of shaft portions 321 extending in the Z-axis direction are provided on the upper surface 32 b of the intermediate plate 32, and a plurality of through holes 332 are provided in the holding plate 33 and the magnet 331 so as to correspond to the positions of the shaft portions 321. Is provided.
  • the plurality of shaft portions 321 pass through the plurality of through holes 332, respectively, and heads 321 h that can come into contact with the periphery of the opening of the through holes 332 on the holding plate 33 side are provided at the upper ends thereof. .
  • Each shaft portion 321 is configured to have the same length.
  • the intermediate plate 32 is suspended by its own weight (for example, when the holding plate 33 is in the raised position)
  • the upper surface 32b of the intermediate plate 32 and the lower surface of the magnet 331 are formed.
  • the distance G1 is set to a length that is formed between the two. Accordingly, the intermediate plate 32 is supported so as to be relatively movable with respect to the holding plate 33 by a distance G1 at the longest in the Z-axis direction.
  • the head portion 321h of the shaft portion 321 is formed in an inverted truncated cone shape. Accordingly, in the suspended state of the intermediate plate 32 shown in FIG. 7, the axial center of each shaft portion 321 can be made coincident with the axial center of each through-hole 332, and thus the suspended posture of the intermediate plate 32 with respect to the holding plate 33. Can be maintained stably.
  • the opening on the holding plate 33 side of each through hole 332 may be formed in an inverted conical taper shape (conical shape) corresponding to the shape of the head portion 321h as shown in the figure. Good.
  • each pressing unit 35 is installed on the holding plate 33 and are respectively disposed at the penetrating positions of the plurality of shaft portions 321.
  • Each pressing unit 35 includes a pressing element 351 disposed at a position directly above the head 321 h of the shaft portion 321, and an elastic member 355 disposed between the pressing element 351 and the upper surface 32 b of the intermediate plate 32.
  • the pressing element 351 is disposed to face the head 321h of the shaft portion 321 in the Z-axis direction.
  • the pressing element 351 is made of, for example, a circular plate material, and a bolt member 352 extending in the Z-axis direction is fixed at the center thereof.
  • the bolt member 352 passes through the top of the support portion 353 installed on the upper surface of the holding plate 33 so as to surround the head portion 321 h of the shaft portion 321, and is screwed into the nut member 354 fixed to the upper surface of the support portion 353. ing. Therefore, by rotating the bolt member 352 about the axis relative to the nut member 354, the relative distance of the pressing element 351 with respect to the head portion 321h of the shaft portion 321 can be adjusted.
  • the elastic member 355 is elastically deformable in the Z-axis direction, and is installed on the upper surface of the head portion 321h of the shaft portion 321.
  • the elastic member 355 is typically configured by a coil spring, but is not limited thereto, and may be configured by an elastic material such as rubber or elastomer.
  • a distance G2 is formed between the upper surface of the elastic member 355 and the lower surface of the pressing element 351.
  • the distance G2 is set to a value smaller than the distance G1.
  • the value of the distance G2 may be zero.
  • the elastic member 355 may be installed not on the upper surface of the head portion 321h of the shaft portion 321 but on the lower surface of the presser 351.
  • the intermediate plate 32 has a first position shown in FIG. 7, a second position (contact position) shown in FIG. 8, and a second position shown in FIG. 9 with respect to the holding plate 33 (magnet 331). 3 positions (holding positions).
  • the intermediate plate 32 is configured to be movable along the Z-axis direction between the first position and the third position via the second position.
  • the intermediate plate 32 In the first position, the intermediate plate 32 is suspended from the holding plate 33, the lower surface 32 a of the intermediate plate 32 is not in contact with the substrate W, and the upper surface 32 b of the intermediate plate 32 is not connected to the holding plate 33 ( It faces the magnet 331) with a relative distance of the gap G1.
  • the lower surface 32a of the intermediate plate 32 In the second position, the lower surface 32a of the intermediate plate 32 is in contact with the substrate W, the holding plate 33 is lowered until the presser 351 is in contact with the upper surface of the elastic member 355, and the upper surface 32b of the intermediate plate 32 is held.
  • the plate 33 (magnet 331) faces the gap (G1-G2) with a relative distance (first distance).
  • the holding plate 33 In the third position, at least a part of the lower surface 32a of the intermediate plate 32 contacts the substrate W, and the holding plate 33 further descends by a predetermined amount while compressing and deforming the elastic member 355, and the upper surface 32b of the intermediate plate 32 Is opposed to the holding plate 33 (magnet 331) with a relative distance (second distance) of the gap G3 smaller than the gap (G1-G2).
  • the pressing mechanism 34 moves in the process of moving the intermediate plate 32 from the second position (contact position) to the third position (holding position). It becomes possible to press the upper surface 32b of the plate 32 along the Z-axis direction.
  • the lowering position of the holding plate 33 is set to a predetermined height position from the mask plate 311.
  • the pressing force of the intermediate plate 32 by the pressing mechanism 34 (the pressing unit 35) is set by the magnitude of the distance G2. Therefore, the pressing force can be easily adjusted by changing the distance G2.
  • the substrate holding device 30 further includes a support unit 36 that supports the substrate W transferred into the film forming chamber 10 between the mask plate 311 and the intermediate plate 32.
  • the support unit 36 includes, for example, a plurality of hooks that support the peripheral edge of the lower surface of the substrate W.
  • the support unit 36 is configured to be movable up and down between a substrate delivery position (FIG. 2) with a substrate transport apparatus (not shown) and a substrate placement position (FIG. 3) on the mask plate 311. Further, the support unit 36 is configured to be movable in the horizontal direction in order to enable alignment of the substrate W with respect to the mask plate 311.
  • the film forming apparatus 100 further includes a control unit 40 that controls operations of the evaporation source 20, the substrate holding device 30, the support unit 36, and the like.
  • the control unit 40 is typically configured by a computer, and controls the operation of each unit by executing a predetermined program.
  • the substrate W transported into the film forming chamber 10 via a gate valve (not shown) is supported by the support unit 36 waiting at the substrate transfer position with the film forming surface facing downward.
  • the holding plate 33 is moved to the raised position as shown in FIG. 2, and the intermediate plate 32 is suspended from the holding plate 33 by its own weight.
  • the substrate W is disposed between the intermediate plate 32 and the mask plate 311 by the support unit 36. Thereafter, horizontal alignment of the substrate W with respect to the mask plate 311 is performed.
  • the support unit 36 After the alignment of the substrate W, the support unit 36 is lowered to the substrate placement position, and the substrate W is placed on the upper surface of the mask plate 311.
  • a plurality of relief portions (recesses) 312a for avoiding a collision with the support unit 36 lowered to the substrate mounting position are provided on the upper surface of the frame portion 312 of the mask member 31.
  • the holding plate 33 moves from the raised position shown in FIG. 2 to the lowered position shown in FIG. Thereby, the lower surface 32 a of the intermediate plate 32 comes into contact with the non-deposition surface (non-deposition surface) of the substrate W, and the magnet 331 approaches the upper surface 32 b of the intermediate plate 32 by the relative movement of the holding plate 33 with respect to the intermediate plate 32. To do. At this time, the magnet 331 stops with a slight gap (G3) with respect to the upper surface 32b of the intermediate plate.
  • each pressing unit 35 is partially pressed toward the substrate W and the mask plate 311 in the Z-axis direction.
  • the intermediate plate 32 is pressed toward the mask plate 311 by the pressing unit 35 with a pressing amount corresponding to the distance of (G1-G2-G3).
  • the flatness of the intermediate plate 32 is increased by correcting the bend or deformation to be flat (FIG. 9).
  • the contact area of the lower surface 32a of the intermediate plate 32 with respect to the substrate W is increased, so that the relative distance between the magnet 331 and the mask plate 311 is also shortened, and the magnetic attractive force of the mask plate 311 by the magnet 331 is increased. Adhesion with the mask plate 311 is improved.
  • the intermediate plate 32, the substrate W, and the mask plate 311 are integrally held. Thereafter, a film forming process for the substrate W is performed.
  • the gap between the substrate W and the mask plate 311 can be made as small as possible, thereby vapor deposition from the gap. The wraparound of the material can be prevented.
  • the flatness of the intermediate plate 32 is increased by the pressing unit 35, the flatness of the substrate W following the lower surface 32a of the intermediate plate 32 is also ensured. Thereby, a highly accurate mask film forming process can be realized on the film forming surface of the substrate W. Furthermore, by performing the film formation process while reciprocating the evaporation source 20 in the horizontal direction, it is possible to improve the in-plane uniformity of the film formation process over the entire film formation surface of the substrate W.
  • the substrate holding device 30 moves the holding plate 33 from the lowered position shown in FIG. 3 to the raised position shown in FIG. At this time, the substrate W is pressed against the mask plate 311 by the pressing force of the pressing unit 35 and the weight of the intermediate unit until the holding plate 33 moves by a predetermined distance (a distance corresponding to G1-G3). Maintained. Thereby, since the position shift of the substrate W with respect to the mask plate 311 is prevented, the vapor deposition pattern formed on the film formation surface is prevented from being damaged at the mask opening. Further, since the intermediate plate 32 is made of a nonmagnetic material, the magnet 331 can be easily separated from the mask plate 311.
  • the support unit 36 rises to the substrate delivery position (FIG. 2). Then, the film-formed substrate W is carried out of the film forming chamber 10 through a substrate transfer device (not shown). Further, a new substrate W to be deposited is transferred to the support unit 36, and holding and deposition of the substrate W are performed through the same operation as described above.
  • the intermediate plate 32 has a function of maintaining the planar state of the substrate W by contacting the non-deposition surface of the substrate W facing the mask plate 311.
  • the flatness of the intermediate plate 32 itself may decrease as the size of the intermediate plate 32 increases or the thickness of the intermediate plate 32 decreases. Therefore, the substrate holding device 30 of this embodiment includes a pressing mechanism 34 that presses at least a part of the intermediate plate 32 toward the mask plate 311 side. As a result, the flatness of the intermediate plate 32 is increased. As a result, the flatness of the substrate in contact with the intermediate plate 32 is also maintained, and good adhesion with the mask plate 311 is ensured. Further, since the intermediate plate 32 can be thinned, it is possible to ensure a stable adhesion between the mask plate 311 and the substrate W regardless of the substrate size.
  • the pressing mechanism 34 (the pressing unit 35) is disposed so as to face the upper surface 32b of the intermediate plate 32. Therefore, no mechanism unit is provided on the evaporation source 20 side of the mask plate 311.
  • the mask plate 311 and the substrate W can be brought into close contact with each other without installing. Therefore, the adhesion effect between the mask plate 311 and the substrate W can be stably maintained without depending on the aperture ratio of the mask plate 311 and the arrangement form of the mask openings.
  • the pressing mechanism 34 is installed on the holding plate 33, the configuration of the apparatus can be simplified and a desired position of the intermediate plate 32 can be stably pressed.
  • the substrate holding device 30 of the present embodiment is configured so that the intermediate plate 32 can be pressed in the direction of gravity by the pressing mechanism 34. Accordingly, since the decrease in flatness due to the bending deformation of the substrate W or the intermediate plate 32 can be prevented by utilizing the dead weight of the intermediate plate 32, it is possible to stably obtain a desired film forming accuracy. Become.
  • the vacuum deposition apparatus has been described as an example of the film forming apparatus.
  • the present invention is not limited to this, and the present invention can be applied to other film forming apparatuses such as a sputtering apparatus.
  • a sputtering cathode holding the sputtering target is configured as a film forming source.
  • the plurality of pressing units 35 constituting the pressing mechanism 34 are not limited to being arranged at the central portion and / or the peripheral portion of the intermediate plate 32.
  • the pressing unit 35 is provided at the intermediate portion 32 in addition to the central portion, the peripheral portion, and the four corner portions. It may be arranged.
  • the number of arrangement of the pressing units 35 is not particularly limited, and at least one is sufficient when pressing any part of the intermediate plate. When pressing almost the entire area of the intermediate plate, more pressing units are required. What is necessary is just to arrange
  • a frame-shaped pressing unit 37 that can collectively press the peripheral edge of the intermediate plate 32 may be used.
  • the pressing mechanism 34 is installed on the holding plate 33 .
  • the present invention is not limited to this, and the pressing mechanism 34 may be configured independently of the holding plate 33.

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Abstract

Provided is a substrate holding device which is capable of ensuring adhesion between a mask and a substrate. This substrate holding device 30 is provided with: a mask plate 311; an intermediate plate 32; a holding plate 33; and a pressing mechanism 34. The mask plate 311 is configured from a magnetic material. The intermediate plate 32 comprises a first surface facing the mask plate 311 and a second surface that is on the reverse side of the first surface, and is configured such that the first surface is able to come into contact with a substrate W that is arranged on the mask plate 311. The holding plate 33 supports the intermediate plate 32 in such a manner that the intermediate plate 32 is relatively movable in an axial direction that is perpendicular to the mask plate 311, and comprises a magnet 331 which is configured so as to be capable of magnetically sucking the mask plate 311, with the intermediate plate 32 and the substrate W being interposed therebetween. The pressing mechanism 34 is arranged so as to face the second surface, and is configured so as to be capable of pressing at least a part of the second surface in the above-described axial direction.

Description

基板保持装置、成膜装置及び基板保持方法Substrate holding apparatus, film forming apparatus, and substrate holding method
 本発明は、マグネットを用いて成膜用のマスク及び基板を保持する基板保持装置、これを備えた成膜装置及び基板保持方法に関する。 The present invention relates to a substrate holding apparatus for holding a film forming mask and a substrate using a magnet, a film forming apparatus provided with the substrate, and a substrate holding method.
 基板の所定領域に薄膜を形成する技術として、成膜用のマスクを用いる方法が知られている。例えば特許文献1には、成膜面に板状のマスクが配置された基板を成膜室内で搬送しながら、蒸着源で発生した蒸着材料の蒸気を成膜面に蒸着させるインライン式の成膜装置が記載されている。 As a technique for forming a thin film in a predetermined region of a substrate, a method using a film formation mask is known. For example, Patent Document 1 discloses an in-line film deposition method in which a vapor deposition material generated in a deposition source is deposited on a deposition surface while a substrate having a plate-like mask disposed on the deposition surface is transported in a deposition chamber. An apparatus is described.
 この種の成膜装置においては、マスクと基板との隙間からの蒸着材料の蒸気の回り込みを阻止するため、マスクと基板との密着性を確保する必要がある。このため、マスクと、当該マスクを磁気吸着する磁石板との間に、基板および基板を平坦に保持する基板保持体を同時に挟み込む方法が知られている(例えば特許文献2参照)。 In this type of film forming apparatus, it is necessary to ensure the adhesion between the mask and the substrate in order to prevent the vapor of the vapor deposition material from entering the gap between the mask and the substrate. For this reason, a method is known in which a substrate and a substrate holder that holds the substrate flat are sandwiched between a mask and a magnet plate that magnetically attracts the mask (see, for example, Patent Document 2).
 一方、近年における基板の大型化に伴い、基板保持体が平面度を得るために必要な厚さが増してしまう結果、磁石板のマスクに及ぼす磁力が低下し、基板とマスクとの密着性が低下することが懸念されている。この問題を解消するため、特許文献2には、マスクの蒸発源側に、マスクを基板に押し付けるマスク押付機構を設けることで、マスクを基板に密着させることが記載されている。 On the other hand, as the size of the substrate increases in recent years, the thickness required for the substrate holder to obtain flatness increases. As a result, the magnetic force exerted on the mask of the magnet plate decreases, and the adhesion between the substrate and the mask is reduced. There is concern about the decline. In order to solve this problem, Patent Document 2 describes that a mask pressing mechanism for pressing the mask against the substrate is provided on the evaporation source side of the mask so that the mask is brought into close contact with the substrate.
特開2010-118157号公報JP 2010-118157 A 特開2013-247040号公報JP 2013-247040 A
 しかしながら、特許文献2に記載の構成では、マスク押付機構を構成する機構部がマスクの蒸発源側に設置されているため、当該機構部への着膜及びそれによる動作不良が懸念される。また、マスクの開口率が大きい場合や開口部の間隔が狭い場合などにおいては、開口部を遮蔽することなく上記機構部を配置することが困難になる。 However, in the configuration described in Patent Document 2, since the mechanism part that constitutes the mask pressing mechanism is installed on the evaporation source side of the mask, there is a concern about film formation on the mechanism part and malfunction due to the film formation. Also, when the aperture ratio of the mask is large or when the interval between the openings is narrow, it is difficult to arrange the mechanism without shielding the openings.
 以上のような事情に鑑み、本発明の目的は、マスクの蒸発源側に機構部を設置することなく、マスクと基板との密着性を確保することができる基板保持装置、成膜装置及び基板保持方法を提供することにある。 In view of the circumstances as described above, an object of the present invention is to provide a substrate holding apparatus, a film forming apparatus, and a substrate that can ensure adhesion between the mask and the substrate without installing a mechanism portion on the evaporation source side of the mask. It is to provide a holding method.
 上記目的を達成するため、本発明の一形態に係る基板保持装置は、マスクプレートと、中間プレートと、保持プレートと、押圧機構とを具備する。
 上記マスクプレートは、磁性材料で構成される。
 上記中間プレートは、上記マスクプレートに対向する第1の面と、上記第1の面とは反対側の第2の面とを有し、上記第1の面が上記マスクプレート上に配置された基板に接触可能に構成される。
 上記保持プレートは、上記中間プレートを上記マスクプレートと直交する軸方向に相対移動可能に支持する。上記保持プレートは、上記中間プレート及び上記基板を介して上記マスクプレートを磁気吸着することが可能に構成されたマグネットを有する。
 上記押圧機構は、上記第2の面に対向して配置される。上記押圧機構は、上記第2の面の少なくとも一部を上記軸方向に沿って押圧することが可能に構成される。
In order to achieve the above object, a substrate holding apparatus according to an aspect of the present invention includes a mask plate, an intermediate plate, a holding plate, and a pressing mechanism.
The mask plate is made of a magnetic material.
The intermediate plate has a first surface facing the mask plate and a second surface opposite to the first surface, and the first surface is disposed on the mask plate. It is configured to be able to contact the substrate.
The holding plate supports the intermediate plate so as to be relatively movable in an axial direction orthogonal to the mask plate. The holding plate includes a magnet configured to magnetically attract the mask plate through the intermediate plate and the substrate.
The pressing mechanism is disposed to face the second surface. The pressing mechanism is configured to be able to press at least a part of the second surface along the axial direction.
 上記基板保持装置において、中間プレートは、マスクプレートに対向する基板の非成膜面に接触することで基板の平面状態を維持する機能を有する。一方、中間プレートが大型化するほど、又は、中間プレートの厚みが小さいほど、中間プレートの強度不足や成膜中の入熱による変形により中間プレート自体の平面度が低下するおそれがある。そこで、上記基板保持装置は、中間プレートの少なくとも一部をマスクプレート側に向けて押圧する押圧機構を備える。これにより、中間プレートの平面度が高まる結果、中間プレートに接触する基板の平面度も維持され、マスクプレートとの良好な密着性が確保される。また、中間プレートの薄化が可能となるため、基板サイズに関係なく、マスクプレートと基板との安定した密着力を確保することが可能となる。 In the substrate holding apparatus, the intermediate plate has a function of maintaining the planar state of the substrate by contacting the non-deposition surface of the substrate facing the mask plate. On the other hand, the larger the intermediate plate or the smaller the thickness of the intermediate plate, the lower the flatness of the intermediate plate itself due to insufficient strength of the intermediate plate or deformation due to heat input during film formation. Therefore, the substrate holding device includes a pressing mechanism that presses at least a part of the intermediate plate toward the mask plate. As a result, the flatness of the intermediate plate is increased. As a result, the flatness of the substrate in contact with the intermediate plate is also maintained, and good adhesion to the mask plate is ensured. In addition, since the intermediate plate can be thinned, it is possible to ensure a stable adhesion between the mask plate and the substrate regardless of the substrate size.
 上記基板保持装置において、押圧機構は、中間プレートの第2の面に対向して配置されているため、マスクプレートの蒸発源側に何ら機構部を設置することなく、マスクプレートと基板との密着を図ることができる。このため、マスクプレートの開口率やマスク開口部の配列形態に依存することなく、マスクプレートと基板との密着効果を安定に維持することができるようになる。 In the above substrate holding apparatus, the pressing mechanism is disposed to face the second surface of the intermediate plate, so that the mask plate and the substrate are in close contact with each other without installing any mechanism portion on the evaporation source side of the mask plate. Can be achieved. For this reason, the adhesion effect between the mask plate and the substrate can be stably maintained without depending on the aperture ratio of the mask plate or the arrangement form of the mask openings.
 上記軸方向は、典型的には、重力方向に平行な軸方向である。この場合、上記押圧機構によって、基板あるいは中間プレートの撓み変形による平面度の低下を阻止することができるため、所望とする成膜精度を安定に得ることが可能となる。 The above axial direction is typically an axial direction parallel to the direction of gravity. In this case, the pressing mechanism can prevent a decrease in flatness due to the bending deformation of the substrate or the intermediate plate, so that it is possible to stably obtain a desired film forming accuracy.
 上記押圧機構は、典型的には、上記保持プレートに設置される。押圧機構が保持プレートに設置されることで、装置構成を簡素化できるとともに、中間プレートの所望の位置を安定に押圧することが可能となる。 The pressing mechanism is typically installed on the holding plate. By installing the pressing mechanism on the holding plate, it is possible to simplify the apparatus configuration and stably press the desired position of the intermediate plate.
 上記押圧機構は、上記第2の面の複数個所をそれぞれ押圧することが可能に構成された複数の押圧ユニットを含んでもよい。このように中間プレート上の複数位置を押圧可能とすることで、中間プレートの平面度の改善が容易となる。中間プレートの押圧位置は特に限定されず、典型的には、中間プレート(第2の面)の中央部及び/又は周縁部が挙げられる。 The pressing mechanism may include a plurality of pressing units configured to be able to press a plurality of locations on the second surface. Thus, by making it possible to press a plurality of positions on the intermediate plate, it is easy to improve the flatness of the intermediate plate. The pressing position of the intermediate plate is not particularly limited, and typically includes a central portion and / or a peripheral portion of the intermediate plate (second surface).
 上記中間プレートは、接触位置と保持位置との間を上記軸方向に沿って移動可能に構成されてもよい。上記接触位置は、上記第1の面の少なくとも一部が上記基板に接触し、上記保持プレートに対する相対距離が第1の距離である位置とされ、上記保持位置は、上記保持プレートに対する相対距離が上記第1の距離よりも小さい第2の距離である位置とされる。この場合、上記押圧機構は、上記中間プレートが上記接触位置から上記保持位置へ移動する過程で上記第2の面を上記軸方向に沿って押圧する。
 上記構成によれば、中間プレートの第1の面が基板に接触した状態で、中間プレートの第2の面にマグネットが接近しつつ、当該第2の面が押圧機構によって押圧される。したがって、マスクプレートに対する基板の位置ずれを生じさせることなく、基板をマスクプレートに高い平面度をもって密着させることが可能となる。
The intermediate plate may be configured to be movable along the axial direction between a contact position and a holding position. The contact position is a position where at least a part of the first surface is in contact with the substrate, and a relative distance to the holding plate is a first distance, and the holding position is a relative distance to the holding plate. The position is a second distance that is smaller than the first distance. In this case, the pressing mechanism presses the second surface along the axial direction while the intermediate plate moves from the contact position to the holding position.
According to the above configuration, the second surface is pressed by the pressing mechanism while the magnet approaches the second surface of the intermediate plate in a state where the first surface of the intermediate plate is in contact with the substrate. Therefore, the substrate can be brought into close contact with the mask plate with high flatness without causing a positional shift of the substrate with respect to the mask plate.
 上記押圧ユニットは、例えば、押圧子と、弾性部材とを有する。上記押圧子は、上記第2の面に対向して配置される。上記弾性部材は、上記押圧子と上記第2の面との間に配置され、上記軸方向に弾性変形可能に構成される。
 これにより、中間プレート上の複数の位置に対して所望とする押圧力を安定に付与することが可能となるため、中間プレート及び基板を目的とする平面度に維持することができるようになる。
The pressing unit includes, for example, a pressing element and an elastic member. The pressing element is disposed to face the second surface. The elastic member is disposed between the pressing element and the second surface, and is configured to be elastically deformable in the axial direction.
This makes it possible to stably apply a desired pressing force to a plurality of positions on the intermediate plate, so that the intermediate plate and the substrate can be maintained at a target flatness.
 中間プレートの構成材料は特に限定されず、磁性材料であってもよいし、非磁性材料であってもよい。中間プレートが磁性材料で構成される場合、マグネットからの磁界が通過する磁路が形成されるため、マスクプレートに対する磁気吸着力を高めることができる。一方、中間プレートが非磁性材料で構成される場合、成膜後にマグネットによる基板の保持を解除するとき、中間プレートを基板に接触させた状態で保持プレートをマスクプレートから離間させることができる。 The constituent material of the intermediate plate is not particularly limited, and may be a magnetic material or a non-magnetic material. When the intermediate plate is made of a magnetic material, a magnetic path through which the magnetic field from the magnet passes is formed, so that the magnetic attractive force on the mask plate can be increased. On the other hand, when the intermediate plate is made of a nonmagnetic material, when releasing the holding of the substrate by the magnet after film formation, the holding plate can be separated from the mask plate while the intermediate plate is in contact with the substrate.
 本発明の一形態に係る成膜装置は、成膜室と、成膜源と、マスクプレートと、中間プレートと、保持プレートと、押圧機構とを具備する。
 上記成膜源は、上記成膜室に配置される。
 上記マスクプレートは、上記成膜源に対向して配置され、磁性材料で構成される。
 上記中間プレートは、上記マスクプレートに対向する第1の面と、上記第1の面とは反対側の第2の面とを有し、上記第1の面が上記マスクプレート上に配置された基板に接触可能に構成される。
 上記保持プレートは、上記中間プレートを上記マスクプレートに直交する軸方向に相対移動可能に支持する。上記保持プレートは、上記中間プレート及び上記基板を介して上記マスクプレートを磁気吸着することが可能に構成されたマグネットを有する。
 上記押圧機構は、上記第2の面に対向して配置される。上記押圧機構は、上記第2の面の少なくとも一部を上記軸方向に沿って押圧することが可能に構成される。
A film formation apparatus according to one embodiment of the present invention includes a film formation chamber, a film formation source, a mask plate, an intermediate plate, a holding plate, and a pressing mechanism.
The film formation source is disposed in the film formation chamber.
The mask plate is disposed to face the film forming source and is made of a magnetic material.
The intermediate plate has a first surface facing the mask plate and a second surface opposite to the first surface, and the first surface is disposed on the mask plate. It is configured to be able to contact the substrate.
The holding plate supports the intermediate plate so as to be relatively movable in an axial direction perpendicular to the mask plate. The holding plate includes a magnet configured to magnetically attract the mask plate through the intermediate plate and the substrate.
The pressing mechanism is disposed to face the second surface. The pressing mechanism is configured to be able to press at least a part of the second surface along the axial direction.
 本発明の一形態に係る基板保持方法は、磁性材料で構成されたマスクプレート上に基板を配置することを含む。
 上記基板の上に中間プレートが接触させられる。
 押圧機構により上記中間プレートの少なくとも一部が上記マスクプレートに向けて押圧させられる。
 上記中間プレートの上に、上記マスクプレートを磁気吸着するマグネットを有する保持プレートを配置することで、上記中間プレート、上記基板及び上記マスクプレートが一体的に保持される。
A substrate holding method according to an aspect of the present invention includes disposing a substrate on a mask plate made of a magnetic material.
An intermediate plate is brought into contact with the substrate.
At least a part of the intermediate plate is pressed toward the mask plate by the pressing mechanism.
By disposing a holding plate having a magnet for magnetically attracting the mask plate on the intermediate plate, the intermediate plate, the substrate and the mask plate are integrally held.
 本発明によれば、マスクと基板との密着性を確保することができる。 According to the present invention, the adhesion between the mask and the substrate can be ensured.
本発明の一実施形態に係る成膜装置を示す概略断面図である。It is a schematic sectional drawing which shows the film-forming apparatus which concerns on one Embodiment of this invention. 上記成膜装置における基板保持装置の概略拡大図であり、基板保持前の状態を示している。It is a schematic enlarged view of the substrate holding apparatus in the said film-forming apparatus, and has shown the state before board | substrate holding. 上記成膜装置における基板保持装置の概略拡大図であり、基板を保持した状態を示している。It is a schematic enlarged view of the substrate holding apparatus in the said film-forming apparatus, and has shown the state holding the board | substrate. 上記基板保持装置において、マスクプレート、基板、中間プレート及びマグネット(保持プレート)との位置関係を概略的に示す側面図である。In the said board | substrate holding apparatus, it is a side view which shows roughly the positional relationship with a mask plate, a board | substrate, an intermediate | middle plate, and a magnet (holding plate). 上記中間プレートが変形しているときの基板の保持状態を説明する概略側面図である。It is a schematic side view explaining the holding | maintenance state of a board | substrate when the said intermediate | middle plate is deform | transforming. 上記基板保持装置の作用を説明する概略側面図である。It is a schematic side view explaining the effect | action of the said board | substrate holding apparatus. 上記基板保持装置における押圧機構の一構成例を示す概略側断面図であって、基板の非保持状態を示している。It is a schematic sectional side view which shows the example of 1 structure of the press mechanism in the said board | substrate holding apparatus, Comprising: The non-holding state of the board | substrate is shown. 上記基板保持装置における押圧機構の一構成例を示す概略側断面図であって、基板を保持する直前の状態を示している。It is a schematic sectional side view which shows one structural example of the press mechanism in the said board | substrate holding apparatus, Comprising: The state just before holding a board | substrate is shown. 上記基板保持装置における押圧機構の一構成例を示す概略側断面図であって、基板を保持した状態を示している。It is a schematic sectional side view which shows one structural example of the press mechanism in the said board | substrate holding apparatus, Comprising: The state which hold | maintained the board | substrate is shown. 上記押圧機構による中間プレートの押圧箇所の一例を示す概略平面図である。It is a schematic plan view which shows an example of the press location of the intermediate | middle plate by the said press mechanism. 上記押圧機構の変形例を示す中間プレートの概略平面図である。It is a schematic plan view of the intermediate | middle plate which shows the modification of the said press mechanism.
 以下、図面を参照しながら、本発明の実施形態を説明する。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.
 図1は、本発明の一実施形態に係る成膜装置100を示す概略断面図である。図において、X、Y及びZ軸は相互に直交する3軸方向を示しており、X及びY軸は水平方向を、Z軸は高さ方向をそれぞれ示している(以下の各図においても同様)。 FIG. 1 is a schematic sectional view showing a film forming apparatus 100 according to an embodiment of the present invention. In the figure, the X, Y, and Z axes indicate three axial directions orthogonal to each other, the X and Y axes indicate the horizontal direction, and the Z axis indicates the height direction (the same applies to the following drawings). ).
[成膜装置の全体構成]
 本実施形態の成膜装置100は、真空蒸着装置として構成され、成膜室10と、蒸発源20(成膜源)と、基板保持装置30とを備える。
[Overall configuration of deposition system]
The film forming apparatus 100 according to the present embodiment is configured as a vacuum vapor deposition apparatus, and includes a film forming chamber 10, an evaporation source 20 (film forming source), and a substrate holding device 30.
 成膜室10は、真空チャンバで構成される。すなわち、成膜室10には図示しない真空ポンプが接続されており、成膜室10の内部が所定の減圧雰囲気に排気及び維持されることが可能に構成される。 The film forming chamber 10 is composed of a vacuum chamber. That is, a vacuum pump (not shown) is connected to the film forming chamber 10 so that the inside of the film forming chamber 10 can be evacuated and maintained in a predetermined reduced pressure atmosphere.
 成膜装置100は、例えば、搬送室を中心に成膜室10を含む複数の処理室がゲートバルブを介して配置されたクラスタ型の真空成膜装置で構成される。この場合、図1に示すように、上記搬送室内に設置された図示しない基板搬送ロボットを介して、上記搬送室から成膜室10へ、あるいは成膜室10から上記搬送室へ基板Wが搬送される。 The film forming apparatus 100 includes, for example, a cluster-type vacuum film forming apparatus in which a plurality of processing chambers including the film forming chamber 10 are arranged through a gate valve with a transfer chamber as a center. In this case, as shown in FIG. 1, the substrate W is transferred from the transfer chamber to the film forming chamber 10 or from the film forming chamber 10 to the transfer chamber via a substrate transfer robot (not shown) installed in the transfer chamber. Is done.
 蒸発源20は、蒸着材料(あるいは蒸発材料)の蒸気を発生させるためのものであり、抵抗加熱式、誘導加熱式、電子ビーム加熱式等の種々の方式の蒸発源が適用可能である。蒸着材料としては、金属材料、金属酸化物や金属硫化物等の金属化合物材料、合成樹脂材料、有機EL用材料などが用いられる。 The evaporation source 20 is for generating vapor of an evaporation material (or evaporation material), and various types of evaporation sources such as a resistance heating type, an induction heating type, and an electron beam heating type are applicable. As the vapor deposition material, a metal material, a metal compound material such as metal oxide or metal sulfide, a synthetic resin material, an organic EL material, or the like is used.
 なお、蒸発源20は、基板保持装置30に保持された基板Wへの蒸着材料の蒸気の到達を阻止可能なシャッタを備えていてもよい。また、蒸発源20は、成膜室10の底部に固定されてもよいし、成膜室10の底部及び基板保持装置30に対して水平方向に相対移動可能に構成されてもよい。 The evaporation source 20 may include a shutter capable of preventing the vapor of the vapor deposition material from reaching the substrate W held by the substrate holding device 30. Further, the evaporation source 20 may be fixed to the bottom of the film forming chamber 10 or may be configured to be movable relative to the bottom of the film forming chamber 10 and the substrate holding device 30 in the horizontal direction.
[基板保持装置]
 基板保持装置30は、蒸発源20の直上位置に配置され、成膜すべき基板Wを蒸発源20と対向する位置に保持することが可能に構成される。基板保持装置30は、マスク部材31と、中間プレート32と、保持プレート33と、押圧機構34とを有する。
[Substrate holding device]
The substrate holding device 30 is arranged at a position immediately above the evaporation source 20 and is configured to be able to hold the substrate W to be deposited at a position facing the evaporation source 20. The substrate holding device 30 includes a mask member 31, an intermediate plate 32, a holding plate 33, and a pressing mechanism 34.
 図2及び図3は、基板保持装置30の概略拡大図であり、図2は、基板Wの保持前の状態を、図3は、基板Wを保持した状態をそれぞれ示している。 2 and 3 are schematic enlarged views of the substrate holding device 30. FIG. 2 shows a state before the substrate W is held, and FIG. 3 shows a state where the substrate W is held.
 マスク部材31は、蒸発源20と対向して配置される。マスク部材31は、図示しない固定部を介して成膜室10の内部に固定される。 The mask member 31 is disposed to face the evaporation source 20. The mask member 31 is fixed inside the film forming chamber 10 via a fixing unit (not shown).
 マスク部材31は、基板Wの成膜面に対向するマスクプレート311と、マスクプレート311の周縁を支持するフレーム部312とを有する。 The mask member 31 includes a mask plate 311 that faces the film formation surface of the substrate W, and a frame portion 312 that supports the periphery of the mask plate 311.
 マスクプレート311は、所定の開口パターンを有する磁性材料からなる薄板で構成される。マスクプレート311の構成材料は特に限定されず、典型的には、Fe、Co、Niあるいはこれらの合金等の高透磁率特性(軟磁気特性)を有する強磁性材料が用いられる。また、成膜源(蒸発源20)からの成膜時の入熱によるマスクプレート311の熱変形を抑制するために、マスクプレート311の構成材料として熱膨張係数の小さいインバー等の合金が用いられてもよい。マスクプレート311は、基板Wの成膜面を被覆できる大きさに形成される。基板Wの大きさは特に限定されず、本実施形態では第4ないし第5世代(G4~G5)の矩形のガラス基板(例えば、縦680mm~1200mm、横730mm~1300mm)が用いられる。 The mask plate 311 is a thin plate made of a magnetic material having a predetermined opening pattern. The constituent material of the mask plate 311 is not particularly limited, and typically, a ferromagnetic material having high permeability characteristics (soft magnetic characteristics) such as Fe, Co, Ni, or an alloy thereof is used. Further, in order to suppress thermal deformation of the mask plate 311 due to heat input during film formation from the film formation source (evaporation source 20), an alloy such as Invar having a small thermal expansion coefficient is used as a constituent material of the mask plate 311. May be. The mask plate 311 is formed in a size that can cover the film formation surface of the substrate W. The size of the substrate W is not particularly limited, and in this embodiment, a fourth to fifth generation (G4 to G5) rectangular glass substrate (for example, 680 mm to 1200 mm in length and 730 mm to 1300 mm in width) is used.
 フレーム部312は、上記固定部に固定され、マスクプレート311を水平な姿勢に保持する。フレーム部312は、マスクプレート311と同様に磁性材料で構成されてもよいが、これに限られず、非磁性材料で構成されてもよい。 The frame unit 312 is fixed to the fixed unit, and holds the mask plate 311 in a horizontal posture. The frame portion 312 may be made of a magnetic material similarly to the mask plate 311, but is not limited thereto, and may be made of a nonmagnetic material.
 中間プレート32は、マスク部材31の上方に配置され、基板Wよりも大きな所定厚みの矩形の板材で構成される。中間プレート32は、本実施形態ではオーステナイト系ステンレス鋼やアルミニウム、銅などの非磁性材料で構成される。中間プレート32は、マスクプレート311に対向する下面32a(第1の面)と、その反対側の上面32b(第2の面)とを有する。中間プレート32の下面32aは、基板保持時において、マスクプレート311に対向する基板Wの背面(非蒸着面)に接触することが可能に構成される(図3)。 The intermediate plate 32 is disposed above the mask member 31 and is formed of a rectangular plate material having a predetermined thickness larger than that of the substrate W. In this embodiment, the intermediate plate 32 is made of a nonmagnetic material such as austenitic stainless steel, aluminum, or copper. The intermediate plate 32 has a lower surface 32a (first surface) facing the mask plate 311 and an upper surface 32b (second surface) on the opposite side. The lower surface 32a of the intermediate plate 32 is configured to be able to come into contact with the back surface (non-deposition surface) of the substrate W facing the mask plate 311 when the substrate is held (FIG. 3).
 中間プレート32の内部には冷却水の循環流路が形成されてもよい。これにより、成膜中において基板Wの過度な温度上昇を抑制し、基板Wを所定温度以下に冷却することが可能となる。 A cooling water circulation channel may be formed inside the intermediate plate 32. Thereby, an excessive temperature rise of the substrate W during film formation can be suppressed, and the substrate W can be cooled to a predetermined temperature or lower.
 保持プレート33は、中間プレート32の上方に配置され、中間プレート32をマスクプレート31に直交する軸方向(Z軸方向)に相対移動可能に支持する。保持プレート33は、中間プレート32及び基板Wを介してマスクプレート311を磁気吸着することが可能に構成されたマグネット331を有する。マグネット331は、保持プレート33の下面に配置された、基板Wよりも大きな板状の永久磁石で構成される。 The holding plate 33 is disposed above the intermediate plate 32 and supports the intermediate plate 32 so as to be relatively movable in an axial direction (Z-axis direction) orthogonal to the mask plate 31. The holding plate 33 includes a magnet 331 configured to magnetically attract the mask plate 311 via the intermediate plate 32 and the substrate W. The magnet 331 is configured by a plate-like permanent magnet that is disposed on the lower surface of the holding plate 33 and is larger than the substrate W.
 保持プレート33は、図示しない昇降機構を介して、マスク部材31に対してZ軸方向に相対移動可能に構成される。保持プレート33は、基板Wを保持する前の状態では、図2に示すようにマスクプレート311に対して離間した位置(上昇位置)をとり、基板Wを保持するときには、図3に示すようにマスクプレート311に対して近接した位置(下降位置)をとる。中間プレート32は、後述するように、上昇位置では、下面32aがマスクプレート311から所定距離だけ離間し、下降位置では、下面32aがマスクプレート311(あるいは基板W)に接触するように構成される。 The holding plate 33 is configured to be movable relative to the mask member 31 in the Z-axis direction via a lifting mechanism (not shown). In the state before holding the substrate W, the holding plate 33 takes a position (upward position) separated from the mask plate 311 as shown in FIG. 2, and when holding the substrate W, as shown in FIG. A position close to the mask plate 311 (downward position) is taken. As will be described later, the intermediate plate 32 is configured such that the lower surface 32a is separated from the mask plate 311 by a predetermined distance in the raised position, and the lower surface 32a is in contact with the mask plate 311 (or the substrate W) in the lowered position. .
 押圧機構34は、中間プレート32の上面32bの少なくとも一部をZ軸方向に沿って押圧することが可能に構成された複数の押圧ユニット35を有する。複数の押圧ユニット35は、後述するように、中間プレート32の上面32bに対向するように保持プレート33にそれぞれ設置される。 The pressing mechanism 34 includes a plurality of pressing units 35 configured to be able to press at least a part of the upper surface 32b of the intermediate plate 32 along the Z-axis direction. As will be described later, the plurality of pressing units 35 are respectively installed on the holding plate 33 so as to face the upper surface 32b of the intermediate plate 32.
 押圧機構34は、中間プレート32の撓みや変形によって基板Wと中間プレート32との間に隙間が生じるのを防ぐためのもので、保持プレート33が下降位置に到達したときに、基板Wの非蒸着面に接触した中間プレート32の上面を所定の圧力で押圧することで、中間プレート32の形状を平坦に矯正する機能を有する。 The pressing mechanism 34 is for preventing a gap from being generated between the substrate W and the intermediate plate 32 due to bending or deformation of the intermediate plate 32, and when the holding plate 33 reaches the lowered position, the non-loading of the substrate W is not performed. It has a function of correcting the shape of the intermediate plate 32 to be flat by pressing the upper surface of the intermediate plate 32 in contact with the vapor deposition surface with a predetermined pressure.
 図4は、マスクプレート311、基板W、中間プレート32及びマグネット331(保持プレート33)との位置関係を概略的に示す側面図である。基板Wの保持時、保持プレート33が下降位置へ移動することで中間プレート32が基板Wの非蒸着面に接触し、さらにマグネット331によってマスクプレート311を磁気的に吸着し、中間プレート32とマスクプレート311との間で基板Wを挟持する。 FIG. 4 is a side view schematically showing the positional relationship between the mask plate 311, the substrate W, the intermediate plate 32, and the magnet 331 (holding plate 33). At the time of holding the substrate W, the holding plate 33 moves to the lowered position so that the intermediate plate 32 comes into contact with the non-deposition surface of the substrate W, and the mask plate 311 is magnetically attracted by the magnet 331, thereby The substrate W is sandwiched between the plate 311.
 このとき、図5に示すように中間プレート32の変形により基板Wと中間プレート32との間に隙間が生じると、保持プレート33が下降位置に移動した状態、すなわち基板を保持した状態においても、マスクプレート311とマグネット331との間の距離も大きくなり、マスクプレート311を基板Wに密着させるのに必要なマグネット331の磁力が不足するという事態を招く。そこで本実施形態では、図6に示すように、保持プレート33が下降位置に移動した状態で、中間プレート32の上面32bの少なくとも一部を基板W(マスクプレート311)側に押圧することで、中間プレート32の変形量を低減し、これにより中間プレート32の平面度を維持するように構成されている。 At this time, when a gap is generated between the substrate W and the intermediate plate 32 due to the deformation of the intermediate plate 32 as shown in FIG. 5, even when the holding plate 33 is moved to the lowered position, that is, when the substrate is held. The distance between the mask plate 311 and the magnet 331 is also increased, which leads to a situation where the magnetic force of the magnet 331 necessary for bringing the mask plate 311 into close contact with the substrate W is insufficient. Therefore, in the present embodiment, as shown in FIG. 6, with the holding plate 33 moved to the lowered position, at least a part of the upper surface 32b of the intermediate plate 32 is pressed toward the substrate W (mask plate 311), The deformation amount of the intermediate plate 32 is reduced, and thereby the flatness of the intermediate plate 32 is maintained.
 複数の押圧ユニット35は、中間プレート32の上面をそれぞれ部分的に押圧することが可能に構成される。押圧機構34が複数の押圧ユニット35を備えることにより、中間プレート32の平面度の改善が容易となる。中間プレート32の押圧位置(押圧ユニット35が配置される位置)は特に限定されず、典型的には、中間プレート32の中央部あるいは周縁部、あるいはそれらの両方が挙げられる。 The plurality of pressing units 35 are configured to be able to partially press the upper surface of the intermediate plate 32, respectively. Since the pressing mechanism 34 includes the plurality of pressing units 35, the flatness of the intermediate plate 32 can be easily improved. The pressing position of the intermediate plate 32 (the position where the pressing unit 35 is disposed) is not particularly limited, and typically, the central portion or the peripheral portion of the intermediate plate 32, or both of them may be mentioned.
 複数の押圧ユニット35は、典型的には、それぞれ同一の構成を有する。図7~図9は、押圧ユニット35の構成を概略的に示す側断面図であり、図7は基板Wを保持する前の状態を、図8は基板を保持する直前の状態を、そして図9は基板Wを保持した状態をそれぞれ示している。
 ここで図7は、図2に示される保持プレート33の上昇位置から、基板Wと保持プレート33が下降し、基板Wがマスクプレート311の上面に載置された状態で、かつ、中間プレートが基板Wに接触していない状態を示している。
 また、押圧ユニット35の作用を分かり易くするため、図7及び図8において、中間プレート32は、やや変形した状態(撓みが生じた状態)で描かれており、図9に示す基板Wの保持状態においては中間プレート32の撓みが矯正された状態(平面状態)で描かれている。
The plurality of pressing units 35 typically have the same configuration. 7 to 9 are side sectional views schematically showing the configuration of the pressing unit 35. FIG. 7 shows a state before holding the substrate W, FIG. 8 shows a state immediately before holding the substrate, and FIG. Reference numeral 9 denotes a state where the substrate W is held.
7 shows a state in which the substrate W and the holding plate 33 are lowered from the raised position of the holding plate 33 shown in FIG. 2, the substrate W is placed on the upper surface of the mask plate 311, and the intermediate plate is The state which is not contacting the board | substrate W is shown.
Further, in order to make the operation of the pressing unit 35 easy to understand, in FIGS. 7 and 8, the intermediate plate 32 is drawn in a slightly deformed state (a state in which bending occurs), and holds the substrate W shown in FIG. In the state, the intermediate plate 32 is drawn in a state in which the deflection of the intermediate plate 32 is corrected (planar state).
 中間プレート32の上面32bには、Z軸方向に延びる複数の軸部321が設けられており、保持プレート33及びマグネット331には、軸部321の位置に対応するように複数の貫通孔332が設けられている。複数の軸部321は、複数の貫通孔332をそれぞれ貫通し、それらの上端部には、貫通孔332の保持プレート33側開口部周縁に上方から当接可能な頭部321hが設けられている。 A plurality of shaft portions 321 extending in the Z-axis direction are provided on the upper surface 32 b of the intermediate plate 32, and a plurality of through holes 332 are provided in the holding plate 33 and the magnet 331 so as to correspond to the positions of the shaft portions 321. Is provided. The plurality of shaft portions 321 pass through the plurality of through holes 332, respectively, and heads 321 h that can come into contact with the periphery of the opening of the through holes 332 on the holding plate 33 side are provided at the upper ends thereof. .
 各軸部321はそれぞれ同一の長さで構成されており、中間プレート32のその自重による懸吊時(例えば保持プレート33が上昇位置にあるとき)、中間プレート32の上面32bとマグネット331の下面との間に距離G1が形成される長さに設定される。これにより、中間プレート32は、保持プレート33に対してZ軸方向に最長でも距離G1だけ相対移動可能に支持されている。 Each shaft portion 321 is configured to have the same length. When the intermediate plate 32 is suspended by its own weight (for example, when the holding plate 33 is in the raised position), the upper surface 32b of the intermediate plate 32 and the lower surface of the magnet 331 are formed. The distance G1 is set to a length that is formed between the two. Accordingly, the intermediate plate 32 is supported so as to be relatively movable with respect to the holding plate 33 by a distance G1 at the longest in the Z-axis direction.
 本実施形態において、軸部321の頭部321hは、逆円錐台形状に形成されている。これにより、図7に示す中間プレート32の懸吊状態において、各軸部321の軸心を各貫通孔332の軸心と一致させることができるため、保持プレート33に対する中間プレート32の懸吊姿勢を安定に維持することができる。なお上記効果をより一層高めるため、各貫通孔332の保持プレート33側開口部が、図示するように、頭部321hの形状に対応する逆円錐形のテーパ状(すり鉢状)に形成されてもよい。 In this embodiment, the head portion 321h of the shaft portion 321 is formed in an inverted truncated cone shape. Accordingly, in the suspended state of the intermediate plate 32 shown in FIG. 7, the axial center of each shaft portion 321 can be made coincident with the axial center of each through-hole 332, and thus the suspended posture of the intermediate plate 32 with respect to the holding plate 33. Can be maintained stably. In order to further enhance the above effect, the opening on the holding plate 33 side of each through hole 332 may be formed in an inverted conical taper shape (conical shape) corresponding to the shape of the head portion 321h as shown in the figure. Good.
 一方、複数の押圧ユニット35は保持プレート33に設置され、複数の軸部321の貫通位置にそれぞれ配置される。各押圧ユニット35は、軸部321の頭部321hの直上位置に配置された押圧子351と、押圧子351と中間プレート32の上面32bとの間に配置された弾性部材355とを有する。 On the other hand, the plurality of pressing units 35 are installed on the holding plate 33 and are respectively disposed at the penetrating positions of the plurality of shaft portions 321. Each pressing unit 35 includes a pressing element 351 disposed at a position directly above the head 321 h of the shaft portion 321, and an elastic member 355 disposed between the pressing element 351 and the upper surface 32 b of the intermediate plate 32.
 押圧子351は、軸部321の頭部321hにZ軸方向に対向して配置される。押圧子351は、例えば円形の板材で構成され、その中心部にはZ軸方向に延びるボルト部材352が固定されている。ボルト部材352は、軸部321の頭部321hを囲むように保持プレート33の上面に設置された支持部353の頂部を貫通し、支持部353の上面に固定されたナット部材354に螺合している。したがって、ナット部材354に対してボルト部材352を軸まわりに回転させることで、軸部321の頭部321hに対する押圧子351の相対距離が調整可能とされる。 The pressing element 351 is disposed to face the head 321h of the shaft portion 321 in the Z-axis direction. The pressing element 351 is made of, for example, a circular plate material, and a bolt member 352 extending in the Z-axis direction is fixed at the center thereof. The bolt member 352 passes through the top of the support portion 353 installed on the upper surface of the holding plate 33 so as to surround the head portion 321 h of the shaft portion 321, and is screwed into the nut member 354 fixed to the upper surface of the support portion 353. ing. Therefore, by rotating the bolt member 352 about the axis relative to the nut member 354, the relative distance of the pressing element 351 with respect to the head portion 321h of the shaft portion 321 can be adjusted.
 弾性部材355は、Z軸方向に弾性変形可能であり、軸部321の頭部321hの上面に設置されている。弾性部材355は、典型的にはコイルばねで構成されるが、これに限られず、ゴムやエラストマ等の弾性材料で構成されてもよい。本実施形態では、保持プレート33が第1の位置にある場合において、弾性部材355の上面と押圧子351の下面との間に距離G2が形成されている。距離G2は、距離G1よりも小さい値に設定される。距離G2の値は、ゼロであってもよい。なお、弾性部材355は、軸部321の頭部321hの上面ではなく、押圧子351の下面に設置されてもよい。 The elastic member 355 is elastically deformable in the Z-axis direction, and is installed on the upper surface of the head portion 321h of the shaft portion 321. The elastic member 355 is typically configured by a coil spring, but is not limited thereto, and may be configured by an elastic material such as rubber or elastomer. In the present embodiment, when the holding plate 33 is in the first position, a distance G2 is formed between the upper surface of the elastic member 355 and the lower surface of the pressing element 351. The distance G2 is set to a value smaller than the distance G1. The value of the distance G2 may be zero. The elastic member 355 may be installed not on the upper surface of the head portion 321h of the shaft portion 321 but on the lower surface of the presser 351.
 本実施形態において、中間プレート32は、保持プレート33(マグネット331)に対して、図7に示す第1の位置と、図8に示す第2の位置(接触位置)と、図9に示す第3の位置(保持位置)とを有する。中間プレート32は、第2の位置を経由して第1の位置と第3の位置との間をZ軸方向に沿って移動可能に構成される。 In the present embodiment, the intermediate plate 32 has a first position shown in FIG. 7, a second position (contact position) shown in FIG. 8, and a second position shown in FIG. 9 with respect to the holding plate 33 (magnet 331). 3 positions (holding positions). The intermediate plate 32 is configured to be movable along the Z-axis direction between the first position and the third position via the second position.
 上記第1の位置では、中間プレート32は、保持プレート33に懸吊されており、中間プレート32の下面32aは基板Wに接触しておらず、中間プレート32の上面32bは、保持プレート33(マグネット331)に対して間隙G1の相対距離をおいて対向している。
 上記第2の位置では、中間プレート32の下面32aが基板Wに接触し、保持プレート33は、押圧子351が弾性部材355の上面に接触するまで下降し、中間プレート32の上面32bは、保持プレート33(マグネット331)に対して間隙(G1-G2)の相対距離(第1の距離)をおいて対向している。
 上記第3の位置では、中間プレート32の下面32aの少なくとも一部が基板Wに接触し、保持プレート33は、弾性部材355を圧縮変形させながら所定量だけさらに下降し、中間プレート32の上面32bは、保持プレート33(マグネット331)に対して、間隙(G1-G2)よりも小さい間隙G3の相対距離(第2の距離)をおいて対向している。
In the first position, the intermediate plate 32 is suspended from the holding plate 33, the lower surface 32 a of the intermediate plate 32 is not in contact with the substrate W, and the upper surface 32 b of the intermediate plate 32 is not connected to the holding plate 33 ( It faces the magnet 331) with a relative distance of the gap G1.
In the second position, the lower surface 32a of the intermediate plate 32 is in contact with the substrate W, the holding plate 33 is lowered until the presser 351 is in contact with the upper surface of the elastic member 355, and the upper surface 32b of the intermediate plate 32 is held. The plate 33 (magnet 331) faces the gap (G1-G2) with a relative distance (first distance).
In the third position, at least a part of the lower surface 32a of the intermediate plate 32 contacts the substrate W, and the holding plate 33 further descends by a predetermined amount while compressing and deforming the elastic member 355, and the upper surface 32b of the intermediate plate 32 Is opposed to the holding plate 33 (magnet 331) with a relative distance (second distance) of the gap G3 smaller than the gap (G1-G2).
 押圧ユニット35は、以上のように構成されているため、押圧機構34は、中間プレート32が上記第2の位置(接触位置)から上記第3の位置(保持位置)へ移動する過程で、中間プレート32の上面32bをZ軸方向に沿って押圧することが可能となる。 Since the pressing unit 35 is configured as described above, the pressing mechanism 34 moves in the process of moving the intermediate plate 32 from the second position (contact position) to the third position (holding position). It becomes possible to press the upper surface 32b of the plate 32 along the Z-axis direction.
 保持プレート33の下降位置は、マスクプレート311から所定の高さ位置に設定される。この場合、押圧機構34(押圧ユニット35)による中間プレート32の押圧力は、距離G2の大きさで設定される。したがって上記押圧力は、距離G2を変化させることで、容易に調整することができる。 The lowering position of the holding plate 33 is set to a predetermined height position from the mask plate 311. In this case, the pressing force of the intermediate plate 32 by the pressing mechanism 34 (the pressing unit 35) is set by the magnitude of the distance G2. Therefore, the pressing force can be easily adjusted by changing the distance G2.
 図2,3に示すように、基板保持装置30はさらに、成膜室10内に搬送された基板Wをマスクプレート311と中間プレート32との間で支持する支持ユニット36を有する。支持ユニット36は、例えば、基板Wの下面周縁部を支持する複数のフックを含む。支持ユニット36は、図示しない基板搬送装置との基板受け渡し位置(図2)と、マスクプレート311への基板載置位置(図3)との間で昇降移動可能に構成される。また、支持ユニット36は、マスクプレート311に対する基板Wのアライメントを可能にするため、水平方向に移動可能に構成される。 As shown in FIGS. 2 and 3, the substrate holding device 30 further includes a support unit 36 that supports the substrate W transferred into the film forming chamber 10 between the mask plate 311 and the intermediate plate 32. The support unit 36 includes, for example, a plurality of hooks that support the peripheral edge of the lower surface of the substrate W. The support unit 36 is configured to be movable up and down between a substrate delivery position (FIG. 2) with a substrate transport apparatus (not shown) and a substrate placement position (FIG. 3) on the mask plate 311. Further, the support unit 36 is configured to be movable in the horizontal direction in order to enable alignment of the substrate W with respect to the mask plate 311.
 成膜装置100は、蒸発源20、基板保持装置30、支持ユニット36等の動作を制御する制御部40をさらに備える。制御部40は、典型的にはコンピュータで構成され、所定のプログラムを実行することで各部の動作を制御する。 The film forming apparatus 100 further includes a control unit 40 that controls operations of the evaporation source 20, the substrate holding device 30, the support unit 36, and the like. The control unit 40 is typically configured by a computer, and controls the operation of each unit by executing a predetermined program.
[成膜装置の動作]
 次に、以上のように構成される本実施形態の成膜装置100の典型的な動作について説明する。
[Operation of deposition system]
Next, a typical operation of the film forming apparatus 100 of the present embodiment configured as described above will be described.
 図示しないゲートバルブを介して成膜室10内に搬送された基板Wは、成膜面を下向きにして、基板受け渡し位置に待機した支持ユニット36により支持される。このとき保持プレート33は、図2に示すように上昇位置に移動しており、中間プレート32は、その自重により保持プレート33から吊り下げられている。基板Wは、支持ユニット36によって、中間プレート32とマスクプレート311との間に配置される。その後、マスクプレート311に対する基板Wの水平方向のアライメントが実行される。 The substrate W transported into the film forming chamber 10 via a gate valve (not shown) is supported by the support unit 36 waiting at the substrate transfer position with the film forming surface facing downward. At this time, the holding plate 33 is moved to the raised position as shown in FIG. 2, and the intermediate plate 32 is suspended from the holding plate 33 by its own weight. The substrate W is disposed between the intermediate plate 32 and the mask plate 311 by the support unit 36. Thereafter, horizontal alignment of the substrate W with respect to the mask plate 311 is performed.
 基板Wのアライメント後、支持ユニット36は基板載置位置へ下降し、基板Wはマスクプレート311の上面に載置される。なお、マスク部材31のフレーム部312の上面には、上記基板載置位置へ下降した支持ユニット36との衝突を回避するための複数の逃げ部(凹所)312aが設けられている。 After the alignment of the substrate W, the support unit 36 is lowered to the substrate placement position, and the substrate W is placed on the upper surface of the mask plate 311. A plurality of relief portions (recesses) 312a for avoiding a collision with the support unit 36 lowered to the substrate mounting position are provided on the upper surface of the frame portion 312 of the mask member 31.
 その後、保持プレート33が図2に示す上昇位置から図3に示す下降位置へ移動する。これにより、中間プレート32の下面32aが基板Wの非蒸着面(非成膜面)に接触するとともに、中間プレート32に対する保持プレート33の相対移動によって、マグネット331が中間プレート32の上面32bに近接する。このとき、マグネット331は、中間プレートの上面32bに対して僅かな隙間(G3)をおいて停止する。 Thereafter, the holding plate 33 moves from the raised position shown in FIG. 2 to the lowered position shown in FIG. Thereby, the lower surface 32 a of the intermediate plate 32 comes into contact with the non-deposition surface (non-deposition surface) of the substrate W, and the magnet 331 approaches the upper surface 32 b of the intermediate plate 32 by the relative movement of the holding plate 33 with respect to the intermediate plate 32. To do. At this time, the magnet 331 stops with a slight gap (G3) with respect to the upper surface 32b of the intermediate plate.
 一方、中間プレート32の上面32bの複数個所は、図7に示す第1の位置から図8に示す第2の位置(接触位置)を経て図9に示す第3の位置(保持位置)へ移動するまでに、各押圧ユニット35から基板W及びマスクプレート311に向かってZ軸方向にそれぞれ部分的に押圧される。本実施形態において中間プレート32は、各押圧ユニット35によって、(G1-G2-G3)の距離に相当する押圧量でマスクプレート311に向けて押圧される。このとき、中間プレート32に撓みや変形が生じている場合には、それら撓みや変形が平坦に矯正されることで、中間プレート32の平面度が高められる(図9)。これにより、中間プレート32の下面32aの基板Wに対する接触面積が高まるため、マグネット331とマスクプレート311との相対距離も短くなり、マグネット331によるマスクプレート311の磁気吸着力が高まる結果、基板Wとマスクプレート311との密着性が向上する。 On the other hand, a plurality of positions on the upper surface 32b of the intermediate plate 32 move from the first position shown in FIG. 7 to the third position (holding position) shown in FIG. 9 through the second position (contact position) shown in FIG. Until then, each pressing unit 35 is partially pressed toward the substrate W and the mask plate 311 in the Z-axis direction. In the present embodiment, the intermediate plate 32 is pressed toward the mask plate 311 by the pressing unit 35 with a pressing amount corresponding to the distance of (G1-G2-G3). At this time, when the intermediate plate 32 is bent or deformed, the flatness of the intermediate plate 32 is increased by correcting the bend or deformation to be flat (FIG. 9). As a result, the contact area of the lower surface 32a of the intermediate plate 32 with respect to the substrate W is increased, so that the relative distance between the magnet 331 and the mask plate 311 is also shortened, and the magnetic attractive force of the mask plate 311 by the magnet 331 is increased. Adhesion with the mask plate 311 is improved.
 以上のようにして、中間プレート32、基板W及びマスクプレート311が一体的に保持される。その後、基板Wの成膜処理が実施される。本実施形態によれば、基板保持装置30により基板Wとマスクプレート311との密着性が確保されているため、基板Wとマスクプレート311との隙間を極力小さくでき、これにより当該隙間からの蒸着材料の回り込みを阻止することができる。 As described above, the intermediate plate 32, the substrate W, and the mask plate 311 are integrally held. Thereafter, a film forming process for the substrate W is performed. According to the present embodiment, since the adhesion between the substrate W and the mask plate 311 is ensured by the substrate holding device 30, the gap between the substrate W and the mask plate 311 can be made as small as possible, thereby vapor deposition from the gap. The wraparound of the material can be prevented.
 また、押圧ユニット35により中間プレート32の平面度が高まることで、中間プレート32の下面32aにならう基板Wの平面度も確保される。これにより基板Wの成膜面に対して高精度なマスク成膜処理を実現することができる。さらに、蒸発源20を水平方向に往復移動させながら成膜処理を行うことで、基板Wの成膜面全域にわたって成膜処理の面内均一性を高めることが可能となる。 Further, since the flatness of the intermediate plate 32 is increased by the pressing unit 35, the flatness of the substrate W following the lower surface 32a of the intermediate plate 32 is also ensured. Thereby, a highly accurate mask film forming process can be realized on the film forming surface of the substrate W. Furthermore, by performing the film formation process while reciprocating the evaporation source 20 in the horizontal direction, it is possible to improve the in-plane uniformity of the film formation process over the entire film formation surface of the substrate W.
 成膜処理の終了後、基板保持装置30は、保持プレート33を図3に示す下降位置から図2に示す上昇位置へ移動させる。この際、保持プレート33が所定距離(G1-G3に相当する距離)移動するまでの間は、押圧ユニット35による押圧力と中間ユニットの自重により、基板Wがマスクプレート311に押し付けられた状態に維持される。これにより、マスクプレート311に対する基板Wの位置ずれが防止されるため、成膜面に形成された蒸着パターンがマスク開口部で損傷を受けることが阻止される。また、中間プレート32が非磁性材料で構成されているため、マスクプレート311に対するマグネット331の引き離しが容易となる。 After completion of the film forming process, the substrate holding device 30 moves the holding plate 33 from the lowered position shown in FIG. 3 to the raised position shown in FIG. At this time, the substrate W is pressed against the mask plate 311 by the pressing force of the pressing unit 35 and the weight of the intermediate unit until the holding plate 33 moves by a predetermined distance (a distance corresponding to G1-G3). Maintained. Thereby, since the position shift of the substrate W with respect to the mask plate 311 is prevented, the vapor deposition pattern formed on the film formation surface is prevented from being damaged at the mask opening. Further, since the intermediate plate 32 is made of a nonmagnetic material, the magnet 331 can be easily separated from the mask plate 311.
 保持プレート33が上昇位置に移動した後、支持ユニット36が基板受け渡し位置へ上昇する(図2)。そして、図示しない基板搬送装置を介して、成膜済の基板Wが成膜室10外へ搬出される。さらに、成膜すべき新たな基板Wが支持ユニット36へ搬送され、上述と同様の動作を経て、当該基板Wの保持および成膜処理が実施される。 After the holding plate 33 moves to the raised position, the support unit 36 rises to the substrate delivery position (FIG. 2). Then, the film-formed substrate W is carried out of the film forming chamber 10 through a substrate transfer device (not shown). Further, a new substrate W to be deposited is transferred to the support unit 36, and holding and deposition of the substrate W are performed through the same operation as described above.
 以上のように、中間プレート32は、マスクプレート311に対向する基板Wの非成膜面に接触することで、基板Wの平面状態を維持する機能を有する。一方、中間プレート32が大型化するほど、又は、中間プレート32の厚みが小さいほど、中間プレート32自体の平面度が低下するおそれがある。そこで本実施形態の基板保持装置30は、中間プレート32の少なくとも一部をマスクプレート311側に向けて押圧する押圧機構34を備える。これにより、中間プレート32の平面度が高まる結果、中間プレート32に接触する基板の平面度も維持され、マスクプレート311との良好な密着性が確保される。また、中間プレート32の薄化が可能となるため、基板サイズに関係なく、マスクプレート311と基板Wとの安定した密着力を確保することが可能となる。 As described above, the intermediate plate 32 has a function of maintaining the planar state of the substrate W by contacting the non-deposition surface of the substrate W facing the mask plate 311. On the other hand, the flatness of the intermediate plate 32 itself may decrease as the size of the intermediate plate 32 increases or the thickness of the intermediate plate 32 decreases. Therefore, the substrate holding device 30 of this embodiment includes a pressing mechanism 34 that presses at least a part of the intermediate plate 32 toward the mask plate 311 side. As a result, the flatness of the intermediate plate 32 is increased. As a result, the flatness of the substrate in contact with the intermediate plate 32 is also maintained, and good adhesion with the mask plate 311 is ensured. Further, since the intermediate plate 32 can be thinned, it is possible to ensure a stable adhesion between the mask plate 311 and the substrate W regardless of the substrate size.
 また、本実施形態の基板保持装置30において、押圧機構34(押圧ユニット35)は、中間プレート32の上面32bに対向して配置されているため、マスクプレート311の蒸発源20側に何ら機構部を設置することなく、マスクプレート311と基板Wとの密着を図ることができる。このため、マスクプレート311の開口率やマスク開口部の配列形態に依存することなく、マスクプレート311と基板Wとの密着効果を安定に維持することができるようになる。 Further, in the substrate holding device 30 of the present embodiment, the pressing mechanism 34 (the pressing unit 35) is disposed so as to face the upper surface 32b of the intermediate plate 32. Therefore, no mechanism unit is provided on the evaporation source 20 side of the mask plate 311. The mask plate 311 and the substrate W can be brought into close contact with each other without installing. Therefore, the adhesion effect between the mask plate 311 and the substrate W can be stably maintained without depending on the aperture ratio of the mask plate 311 and the arrangement form of the mask openings.
 また、押圧機構34が保持プレート33に設置されているため、装置構成を簡素化できるとともに、中間プレート32の所望の位置を安定に押圧することが可能となる。 In addition, since the pressing mechanism 34 is installed on the holding plate 33, the configuration of the apparatus can be simplified and a desired position of the intermediate plate 32 can be stably pressed.
 さらに、本実施形態の基板保持装置30においては、押圧機構34によって中間プレート32を重力方向に押圧可能に構成される。これにより、中間プレート32の自重をも利用して、基板Wあるいは中間プレート32の撓み変形による平面度の低下を阻止することができるため、所望とする成膜精度を安定に得ることが可能となる。 Furthermore, the substrate holding device 30 of the present embodiment is configured so that the intermediate plate 32 can be pressed in the direction of gravity by the pressing mechanism 34. Accordingly, since the decrease in flatness due to the bending deformation of the substrate W or the intermediate plate 32 can be prevented by utilizing the dead weight of the intermediate plate 32, it is possible to stably obtain a desired film forming accuracy. Become.
 以上、本発明の実施形態について説明したが、本発明は上述の実施形態にのみ限定されるものではなく種々変更を加え得ることは勿論である。 As mentioned above, although embodiment of this invention was described, this invention is not limited only to the above-mentioned embodiment, Of course, a various change can be added.
 例えば以上の実施形態では、成膜装置として真空蒸着装置を例に挙げて説明したが、これに限られず、スパッタ装置等の他の成膜装置にも本発明は適用可能である。この場合、スパッタターゲットを保持するスパッタカソードが成膜源として構成される。 For example, in the above embodiment, the vacuum deposition apparatus has been described as an example of the film forming apparatus. However, the present invention is not limited to this, and the present invention can be applied to other film forming apparatuses such as a sputtering apparatus. In this case, a sputtering cathode holding the sputtering target is configured as a film forming source.
 また、押圧機構34を構成する複数の押圧ユニット35は、中間プレート32の中央部及び/又は周縁部に配置される場合に限られない。図10に模式的に示すように、中間プレート32の形状や大きさ、厚み等に応じて、中間プレート32の中央部、周縁部、四隅部のほか、これらの中間位置等に押圧ユニット35が配置されてもよい。押圧ユニット35の配置数も特に限定されず、中間プレートの任意の一部を押圧する場合には少なくとも1つあればよく、中間プレートのほぼ全域を押圧する場合には、より多くの押圧ユニットを狭ピッチで配置すればよい。さらに図11に示すように、中間プレート32の周縁部を一括的に押圧することが可能な枠状の押圧ユニット37が用いられてもよい。 Further, the plurality of pressing units 35 constituting the pressing mechanism 34 are not limited to being arranged at the central portion and / or the peripheral portion of the intermediate plate 32. As schematically shown in FIG. 10, according to the shape, size, thickness, and the like of the intermediate plate 32, the pressing unit 35 is provided at the intermediate portion 32 in addition to the central portion, the peripheral portion, and the four corner portions. It may be arranged. The number of arrangement of the pressing units 35 is not particularly limited, and at least one is sufficient when pressing any part of the intermediate plate. When pressing almost the entire area of the intermediate plate, more pressing units are required. What is necessary is just to arrange | position with a narrow pitch. Furthermore, as shown in FIG. 11, a frame-shaped pressing unit 37 that can collectively press the peripheral edge of the intermediate plate 32 may be used.
 そして、以上の実施形態では、押圧機構34が保持プレート33に設置される例を説明したが、これに限られず、保持プレート33とは独立して構成されてもよい。 In the above embodiment, an example in which the pressing mechanism 34 is installed on the holding plate 33 has been described. However, the present invention is not limited to this, and the pressing mechanism 34 may be configured independently of the holding plate 33.
 10…成膜室
 20…蒸発源
 30…基板保持装置
 31…マスク部材
 32…中間プレート
 33…保持プレート
 34…押圧機構
 35…押圧ユニット
 100…成膜装置
 311…マスクプレート
 331…マグネット
 351…押圧子
 355…弾性部材
 W…基板
DESCRIPTION OF SYMBOLS 10 ... Film forming chamber 20 ... Evaporation source 30 ... Substrate holding device 31 ... Mask member 32 ... Intermediate plate 33 ... Holding plate 34 ... Pressing mechanism 35 ... Pressing unit 100 ... Film forming device 311 ... Mask plate 331 ... Magnet 351 ... Presser 355 ... elastic member W ... substrate

Claims (9)

  1.  磁性材料で構成されたマスクプレートと、
     前記マスクプレートに対向する第1の面と、前記第1の面とは反対側の第2の面とを有し、前記第1の面が前記マスクプレート上に配置された基板に接触可能に構成された中間プレートと、
     前記中間プレートを前記マスクプレートと直交する軸方向に相対移動可能に支持し、前記中間プレート及び前記基板を介して前記マスクプレートを磁気吸着することが可能に構成されたマグネットを有する保持プレートと、
     前記第2の面に対向して配置され、前記第2の面の少なくとも一部を前記軸方向に沿って押圧することが可能に構成された押圧機構と
     を具備する基板保持装置。
    A mask plate made of magnetic material;
    A first surface facing the mask plate; and a second surface opposite to the first surface, wherein the first surface is capable of contacting a substrate disposed on the mask plate. A configured intermediate plate; and
    A holding plate having a magnet configured to support the intermediate plate so as to be relatively movable in an axial direction perpendicular to the mask plate, and to magnetically attract the mask plate via the intermediate plate and the substrate;
    A substrate holding apparatus comprising: a pressing mechanism that is disposed to face the second surface and configured to press at least a part of the second surface along the axial direction.
  2.  請求項1に記載の基板保持装置であって、
     前記押圧機構は、前記保持プレートに設置される
     基板保持装置。
    The substrate holding apparatus according to claim 1,
    The pressing mechanism is installed on the holding plate.
  3.  請求項2に記載の基板保持装置であって、
     前記押圧機構は、前記第2の面の複数個所をそれぞれ押圧することが可能に構成された複数の押圧ユニットを含む
     基板保持装置。
    The substrate holding apparatus according to claim 2,
    The pressing mechanism includes a plurality of pressing units configured to be able to press a plurality of locations on the second surface, respectively.
  4.  請求項2又は3に記載の基板保持装置であって、
     前記中間プレートは、前記第1の面の少なくとも一部が前記基板に接触し前記保持プレートに対する相対距離が第1の距離である接触位置と、前記保持プレートに対する相対距離が前記第1の距離よりも小さい第2の距離である保持位置との間を移動可能に構成され、
     前記押圧機構は、前記中間プレートが前記接触位置から前記保持位置へ移動する過程で前記第2の面を前記軸方向に沿って押圧する
     基板保持装置。
    The substrate holding device according to claim 2 or 3,
    The intermediate plate has a contact position where at least a part of the first surface is in contact with the substrate and a relative distance with respect to the holding plate is a first distance, and a relative distance with respect to the holding plate is greater than the first distance. Is configured to be movable between a holding position which is a small second distance,
    The pressing mechanism presses the second surface along the axial direction while the intermediate plate moves from the contact position to the holding position.
  5.  請求項4に記載の基板保持装置であって、
     前記押圧ユニットは、
     前記第2の面に対向して配置された押圧子と、
     前記押圧子と前記第2の面との間に配置され、前記軸方向に弾性変形可能な弾性部材と、を有する
     基板保持装置。
    The substrate holding device according to claim 4,
    The pressing unit is
    A pressing element disposed to face the second surface;
    A substrate holding apparatus comprising: an elastic member disposed between the pressing element and the second surface and elastically deformable in the axial direction.
  6.  請求項3~5のいずれか1つに記載の基板保持装置であって、
     前記押圧ユニットは、前記第2の面の中央部及び/又は周縁部を押圧することが可能に構成される
     基板保持装置。
    A substrate holding apparatus according to any one of claims 3 to 5,
    The said pressing unit is comprised so that a center part and / or a peripheral part of a said 2nd surface can be pressed.
  7.  請求項1~6のいずれか1つに記載の基板保持装置であって、
     前記中間プレートは、非磁性材料で構成される
     基板保持装置。
    A substrate holding apparatus according to any one of claims 1 to 6,
    The intermediate plate is made of a nonmagnetic material.
  8.  成膜室と、
     前記成膜室に配置された成膜源と、
     前記成膜源に対向して配置され、磁性材料で構成されたマスクプレートと、
     前記マスクプレートに対向する第1の面と、前記第1の面とは反対側の第2の面とを有し、前記第1の面が前記マスクプレート上に配置された基板に接触可能に構成された中間プレートと、
     前記中間プレートを前記マスクプレートに直交する軸方向に相対移動可能に支持し、前記中間プレート及び前記基板を介して前記マスクプレートを磁気吸着することが可能に構成されたマグネットを有する保持プレートと、
     前記第2の面に対向して配置され、前記第2の面の少なくとも一部を前記軸方向に沿って押圧することが可能に構成された押圧機構と
     を具備する成膜装置。
    A deposition chamber;
    A deposition source disposed in the deposition chamber;
    A mask plate which is arranged opposite to the film-forming source and is made of a magnetic material;
    A first surface facing the mask plate; and a second surface opposite to the first surface, wherein the first surface is capable of contacting a substrate disposed on the mask plate. A configured intermediate plate; and
    A holding plate having a magnet configured to support the intermediate plate so as to be relatively movable in an axial direction orthogonal to the mask plate, and to magnetically attract the mask plate via the intermediate plate and the substrate;
    And a pressing mechanism arranged to face the second surface and configured to press at least a part of the second surface along the axial direction.
  9.  磁性材料で構成されたマスクプレート上に基板を配置し、
     前記基板の上に中間プレートを接触させ、
     押圧機構により前記中間プレートの少なくとも一部を前記マスクプレートに向けて押圧し、
     前記中間プレートの上に、前記マスクプレートを磁気吸着するマグネットを有する保持プレートを配置することで、前記中間プレート、前記基板及び前記マスクプレートを一体的に保持する
     基板保持方法。
    Place the substrate on the mask plate made of magnetic material,
    Contacting an intermediate plate over the substrate;
    Pressing at least a portion of the intermediate plate toward the mask plate by a pressing mechanism;
    A substrate holding method in which the intermediate plate, the substrate, and the mask plate are integrally held by disposing a holding plate having a magnet that magnetically attracts the mask plate on the intermediate plate.
PCT/JP2016/066899 2015-06-12 2016-06-07 Substrate holding device, film forming apparatus and substrate holding method WO2016199759A1 (en)

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SG11201710300SA SG11201710300SA (en) 2015-06-12 2016-06-07 Substrate holding device, film deposition device, and substrate holding method
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