TWI632639B - Substrate holding device, deposition apparatus and substrate holding method - Google Patents

Substrate holding device, deposition apparatus and substrate holding method Download PDF

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TWI632639B
TWI632639B TW105118161A TW105118161A TWI632639B TW I632639 B TWI632639 B TW I632639B TW 105118161 A TW105118161 A TW 105118161A TW 105118161 A TW105118161 A TW 105118161A TW I632639 B TWI632639 B TW I632639B
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plate
substrate
intermediate plate
holding
pressing
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TW201707128A (en
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織部亞由美
萩原宗源
梅村博文
糟谷憲昭
小池潤一郎
小泉和彦
藤野英二
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愛發科股份有限公司
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/757Means for aligning
    • H01L2224/75733Magnetic holding means

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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Abstract

本發明提供一種基板保持裝置,可以確保遮罩與基板的密接性。 The invention provides a substrate holding device, which can ensure the adhesion between the mask and the substrate.

基板保持裝置(30)係具備遮罩板(311)、中間板(32)、保持板(33)及按壓機構(34)。遮罩板(311)係由磁性材料所構成。中間板(32)係具有與遮罩板(311)對向的第一面、以及與上述第一面為相反側的第二面,且上述第一面構成為能夠與被配置於遮罩板(311)上的基板(W)接觸。保持板(33)係將中間板(32)支承成能夠在與遮罩板(311)正交的軸向相對移動,且具有構成為能夠透過中間板(32)及基板(W)而磁性吸附遮罩板(311)的磁鐵(331)。按壓機構(34)係與上述第二面對向所配置,且構成為能夠沿著上述軸向而按壓上述第二面的至少一部分。 The substrate holding device (30) includes a shield plate (311), an intermediate plate (32), a holding plate (33), and a pressing mechanism (34). The shield plate (311) is made of magnetic material. The intermediate plate (32) has a first surface facing the mask plate (311) and a second surface opposite to the first surface, and the first surface is configured to be arranged on the mask plate The substrate (W) on (311) contacts. The holding plate (33) supports the intermediate plate (32) so as to be relatively movable in the axial direction orthogonal to the shield plate (311), and has a structure capable of being magnetically attracted through the intermediate plate (32) and the substrate (W) The magnet (331) of the shield plate (311). The pressing mechanism (34) is arranged to face the second face, and is configured to be able to press at least a part of the second face along the axial direction.

Description

基板保持裝置、成膜裝置以及基板保持方法 Substrate holding device, film forming device and substrate holding method

本發明係關於一種使用磁鐵(magnet)來保持成膜用的遮罩(mask)及基板的基板保持裝置、具備該基板保持裝置的成膜裝置以及基板保持方法。 The present invention relates to a substrate holding device that uses a magnet to hold a film forming mask and a substrate, a film forming device provided with the substrate holding device, and a substrate holding method.

作為在基板的指定區域形成薄膜的技術,已知有使用成膜用的遮罩的方法。例如在專利文獻1中,已記載有一種連續式(inline type)的成膜裝置,其一邊將已在成膜面配置有板狀之遮罩的基板搬運至成膜室內,一邊使在蒸鍍源所產生的蒸鍍材料之蒸氣蒸鍍於成膜面。 As a technique for forming a thin film in a predetermined area of a substrate, a method of using a mask for film formation is known. For example, in Patent Document 1, an inline type film forming apparatus has been described in which a substrate having a plate-like mask disposed on a film forming surface is transferred to a film forming chamber while being deposited The vapor of the vapor deposition material generated by the source is vapor deposited on the film-forming surface.

在此種的成膜裝置中,為了要阻止蒸鍍材料之蒸氣從遮罩與基板之間隙繞進,有必要確保遮罩與基板的密接性。為此,已知有一種在遮罩、與磁性吸附該遮罩的磁鐵板(magnet plate)之間,同時夾入基板以及將基板平坦地保持的基板保持體的方法(例如,參照專利文獻2)。 In such a film forming apparatus, in order to prevent the vapor of the vapor deposition material from entering the gap between the mask and the substrate, it is necessary to ensure the adhesion between the mask and the substrate. For this reason, there is known a method of sandwiching a substrate and a substrate holder that holds the substrate flat between a mask and a magnet plate that magnetically attracts the mask (for example, refer to Patent Document 2) ).

另一方面,隨著近年來的基板之大型化,基板保持體為了獲得平面度而所需的厚度增加,結果,恐有使磁鐵板帶給遮罩的磁力降低,且使基板與遮罩的密接性降低之虞。為了消除該問題,在專利文獻2中已有記載以下的內容:在遮罩的蒸發源側,設置將遮罩緊壓於基板的遮罩緊壓機構,藉此使遮罩密接於基板。 On the other hand, with the recent enlargement of the substrate, the thickness of the substrate holder required to obtain flatness has increased. As a result, there is a possibility that the magnetic force of the magnet plate to the mask may be reduced, and the substrate and the There is a risk of reduced adhesion. In order to eliminate this problem, Patent Document 2 has already described the following: on the evaporation source side of the mask, a mask pressing mechanism that presses the mask against the substrate is provided to closely contact the mask to the substrate.

〔先前技術文獻〕 [Prior Technical Literature]

〔專利文獻〕 [Patent Literature]

專利文獻1:日本特開2010-118157號公報。 Patent Document 1: Japanese Patent Laid-Open No. 2010-118157.

專利文獻2:日本特開2013-247040號公報。 Patent Document 2: Japanese Patent Application Publication No. 2013-247040.

然而,在專利文獻2所記載的構成中,因構成遮罩緊壓機構的機構部係設置於遮罩的蒸發源側,故而恐有對該機構部鍍膜以及因此而帶來動作不良之虞。又,在遮罩的開口率較大或開口部之間隔較窄等的情況下,很難在不遮蔽開口部的前提下配置上述機構部。 However, in the structure described in Patent Document 2, since the mechanism portion constituting the mask pressing mechanism is provided on the evaporation source side of the mask, there is a fear that the mechanism portion may be coated and thus may cause malfunction. In addition, in the case where the aperture ratio of the mask is large or the interval between the openings is narrow, it is difficult to arrange the above-mentioned mechanism portion without shielding the opening.

有鑑於如以上的情形,本發明之目的係在於提供一種不用在遮罩的蒸發源側設置機構部就可以確保遮罩與基板之密接性的基板保持裝置、成膜裝置以及基板保持方法。 In view of the above circumstances, an object of the present invention is to provide a substrate holding apparatus, a film forming apparatus, and a substrate holding method that can ensure the adhesion between the mask and the substrate without providing a mechanism portion on the evaporation source side of the mask.

為了達成上述目的,本發明之一形態的基板保持裝置,係具備遮罩板(mask plate)、中間板、保持板及按壓機構。 In order to achieve the above object, a substrate holding device according to an aspect of the present invention includes a mask plate, an intermediate plate, a holding plate, and a pressing mechanism.

上述遮罩板係由磁性材料所構成。 The mask plate is made of magnetic material.

上述中間板係具有:與上述遮罩板對向的第一面、以及與上述第一面為相反側的第二面,且上述第一面構成為能夠與被配置於上述遮罩板上的基板接觸。 The intermediate plate has a first surface facing the mask plate and a second surface opposite to the first surface, and the first surface is configured to be able to be arranged on the mask plate. Substrate contact.

上述保持板係將上述中間板支承成能夠於與上述遮罩板正交的軸向相對移動。上述保持板係具有構成為能夠透過上述中間板及上述基板而磁性吸附上述遮罩板的磁鐵。 The holding plate supports the intermediate plate so as to be relatively movable in the axial direction orthogonal to the shield plate. The holding plate has a magnet configured to magnetically attract the shield plate through the intermediate plate and the substrate.

上述按壓機構係與上述第二面對向所配置。上述按壓機構係構成為能夠沿著上述軸向而按壓上述第二面的至少一部分。 The pressing mechanism is disposed facing the second face. The pressing mechanism is configured to be able to press at least a part of the second surface along the axial direction.

在上述基板保持裝置中,中間板係具有藉由接觸與遮罩板對向的基板之非成膜面來維持基板之平面狀態的功能。另一方面,恐有中間板越大型化,或是中間板的厚度越小,而使得中間板本身的平面度有因中間板的強度不足或成膜中的熱輸入量(heat input)所造成的變形而越降低之虞。於是,上述基板保持裝置係具備將中間板的至少一部分朝向遮罩板側按壓的按壓機構。藉此,能提高中間板的平面度,結果,亦能維持接觸中間板的基板之平面度,且能確保與中間板之優異的密接性。又,能夠使中間板薄化,故而能夠無關於基板尺寸地確保遮罩板與基板之穩定的密接力。 In the above substrate holding device, the intermediate plate has a function of maintaining the planar state of the substrate by contacting the non-film-forming surface of the substrate facing the mask plate. On the other hand, there is a possibility that the larger the intermediate plate, or the smaller the thickness of the intermediate plate, the flatness of the intermediate plate itself may be caused by insufficient strength of the intermediate plate or heat input during film formation (heat input) The deformation may be lowered. Therefore, the substrate holding device includes a pressing mechanism that presses at least a part of the intermediate plate toward the shield plate side. Thereby, the flatness of the intermediate plate can be improved, and as a result, the flatness of the substrate contacting the intermediate plate can also be maintained, and excellent adhesion with the intermediate plate can be ensured. In addition, since the intermediate plate can be thinned, it is possible to ensure stable adhesion between the mask plate and the substrate regardless of the size of the substrate.

在上述基板保持裝置中,因按壓機構係與中間板的第二面對向所配置,故而不用在遮罩板的蒸發源側設置任何機構部就可以謀求遮罩板與基板的密接。因此,可不依存於遮罩板的開口率或遮罩開口部的排列形態地穩定地維持遮罩板與基板的密接效果。 In the above substrate holding device, since the pressing mechanism is arranged facing the second side of the intermediate plate, it is possible to achieve the close contact between the shield plate and the substrate without providing any mechanism portion on the evaporation source side of the shield plate. Therefore, the adhesion effect between the mask plate and the substrate can be stably maintained without depending on the aperture ratio of the mask plate or the arrangement of the mask openings.

上述軸向典型上是與重力方向平行的軸向。在此情況下,因藉由上述按壓機構就可以阻止因基板或是中間板之撓曲變形而致使的平面度之降低,故而能夠穩定地獲得所期望的成膜精度。 The above-mentioned axis is typically an axis parallel to the direction of gravity. In this case, since the pressing mechanism can prevent the flatness from being reduced due to the deflection and deformation of the substrate or the intermediate plate, the desired film forming accuracy can be stably obtained.

上述按壓機構典型上是設置於上述保持板。藉由將按壓機構設置於保持板,就可以簡化裝置構成,並且能夠穩定地按壓中間板的所期望之位置。 The pressing mechanism is typically provided on the holding plate. By disposing the pressing mechanism on the holding plate, the device configuration can be simplified, and the desired position of the intermediate plate can be stably pressed.

上述按壓機構亦可包括:複數個按壓單元,構成為能夠分別按壓上述第二面的複數個部位。藉由能夠如此地按壓中間板上的複數個位置,而成為可容易地改善中間板的平面度。中間板的按壓位置並未被特別限定,典型上可列舉中間板(第二面)的中央部及/或周緣部。 The pressing mechanism may include a plurality of pressing units configured to be able to respectively press a plurality of locations on the second surface. By being able to press a plurality of positions on the middle plate in this way, it becomes possible to easily improve the flatness of the middle plate. The pressing position of the intermediate plate is not particularly limited, and typically the central portion and / or the peripheral portion of the intermediate plate (second surface) may be mentioned.

上述中間板亦可構成為能夠在接觸位置與保持位置之間沿著上述軸向而移動。上述接觸位置係設為上述第一 面的至少一部分接觸上述基板且與上述保持板相對的相對距離為第一距離的位置,上述保持位置係設為與上述保持板相對的相對距離為比上述第一距離更小之第二距離的位置。在此情況下,上述按壓機構係在上述中間板從上述接觸位置朝向上述保持位置移動的過程中沿著上述軸向而按壓上述第二面。 The intermediate plate may be configured to be movable in the axial direction between the contact position and the holding position. The contact position is set to the first At least a part of the surface contacts the substrate and the relative distance from the holding plate is a first distance, the holding position is set to a relative distance from the holding plate at a second distance smaller than the first distance position. In this case, the pressing mechanism presses the second surface along the axial direction during the movement of the intermediate plate from the contact position toward the holding position.

依據上述構成,能在中間板的第一面已接觸基板的狀態下,一邊使磁鐵接近中間板的第二面,一邊使該第二面藉由按壓機構而被按壓。從而,不會產生基板對遮罩板的位置偏移,且能夠使基板以較高的平面度密接於遮罩板。 According to the above configuration, in a state where the first surface of the intermediate plate has contacted the substrate, the second surface can be pressed by the pressing mechanism while bringing the magnet close to the second surface of the intermediate plate. Therefore, the positional deviation of the substrate from the mask plate does not occur, and the substrate can be in close contact with the mask plate with high flatness.

上述按壓單元例如是具有按壓件及彈性構件。上述按壓件係與上述第二面對向所配置。上述彈性構件係配置於上述按壓件與上述第二面之間,且能夠朝向上述軸向彈性變形。 The pressing unit includes, for example, a pressing member and an elastic member. The pressing member is arranged to face the second face. The elastic member is disposed between the pressing member and the second surface, and is elastically deformable toward the axial direction.

藉此,因能夠對中間板上的複數個位置穩定地賦予所期望的按壓力,故而可以將中間板及基板維持於作為目的的平面度。 Thereby, since a desired pressing force can be stably applied to a plurality of positions on the intermediate plate, the intermediate plate and the substrate can be maintained at the intended flatness.

上述中間板的構成材料並未被特別限定,可為磁性材料,亦可為非磁性材料。在中間板是由磁性材料所構成的情況下,因形成有可供來自磁鐵之磁場通過的磁路,故而可以提高對遮罩板的磁性吸附力。另一方面,在中間板是由非磁性材料所構成的情況下,可以在成膜後解除藉由磁 鐵而致使的基板之保持時,在使中間板接觸基板的狀態下使保持板從遮罩板離開。 The constituent material of the intermediate plate is not particularly limited, and may be a magnetic material or a non-magnetic material. When the intermediate plate is made of a magnetic material, a magnetic circuit through which the magnetic field from the magnet passes is formed, so that the magnetic attraction force to the shield plate can be improved. On the other hand, in the case where the intermediate plate is composed of a non-magnetic material, the magnetic When the substrate is held by iron, the holding plate is separated from the shield plate with the intermediate plate in contact with the substrate.

本發明之一形態的成膜裝置,係具備成膜室、成膜源、遮罩板、中間板、保持板及按壓機構。 A film-forming apparatus according to an aspect of the present invention includes a film-forming chamber, a film-forming source, a shield plate, an intermediate plate, a holding plate, and a pressing mechanism.

上述成膜源係配置於上述成膜室。 The film forming source is arranged in the film forming chamber.

上述遮罩板係與上述成膜源對向所配置,且由磁性材料所構成。 The mask plate is arranged to face the film-forming source, and is made of a magnetic material.

上述中間板係具有:與上述遮罩板對向的第一面、以及與上述第一面為相反側的第二面,且上述第一面構成為能夠與被配置於上述遮罩板上的基板接觸。 The intermediate plate has a first surface facing the mask plate and a second surface opposite to the first surface, and the first surface is configured to be able to be arranged on the mask plate. Substrate contact.

上述保持板係將上述中間板支承成能夠在與上述遮罩板正交的軸向相對移動。上述保持板係具有構成為能夠透過上述中間板及上述基板而磁性吸附上述遮罩板的磁鐵。 The holding plate supports the intermediate plate so as to be relatively movable in the axial direction orthogonal to the shield plate. The holding plate has a magnet configured to magnetically attract the shield plate through the intermediate plate and the substrate.

上述按壓機構係與上述第二面對向所配置,且構成為能夠沿著上述軸向而按壓上述第二面的至少一部分。 The pressing mechanism is arranged to face the second face, and is configured to be able to press at least a part of the second face along the axial direction.

本發明之一形態的基板保持方法係包括將基板配置於由磁性材料所構成的遮罩板上的步驟。 A substrate holding method according to an aspect of the present invention includes the step of disposing a substrate on a mask plate made of a magnetic material.

使中間板接觸上述基板的上方。 The intermediate plate is brought into contact with the above substrate.

藉由按壓機構將上述中間板的至少一部分朝向上述遮罩板按壓。 At least a part of the intermediate plate is pressed toward the shield plate by the pressing mechanism.

在上述中間板的上方配置具有磁性吸附上述遮罩板的磁鐵的保持板,藉此一體地保持上述中間板、上述基板及上 述遮罩板。 A holding plate having a magnet that magnetically attracts the shield plate is disposed above the intermediate plate, thereby integrally holding the intermediate plate, the substrate, and the top Describe the mask plate.

依據本發明,可以確保遮罩與基板的密接性。 According to the present invention, the adhesion between the mask and the substrate can be ensured.

10‧‧‧成膜室 10‧‧‧ film-forming room

20‧‧‧蒸發源 20‧‧‧Evaporation source

30‧‧‧基板保持裝置 30‧‧‧Substrate holding device

31‧‧‧遮罩構件 31‧‧‧Mask member

32‧‧‧中間板 32‧‧‧Middle board

32a‧‧‧下表面(第一面) 32a‧‧‧Lower surface (first surface)

32b‧‧‧上表面(第二面) 32b‧‧‧Upper surface (second surface)

33‧‧‧保持板 33‧‧‧Retaining plate

34‧‧‧按壓機構 34‧‧‧Pressing mechanism

35、37‧‧‧按壓單元 35、37‧‧‧Press unit

36‧‧‧支承單元 36‧‧‧Support unit

40‧‧‧控制部 40‧‧‧Control Department

100‧‧‧成膜裝置 100‧‧‧film forming device

311‧‧‧遮罩板 311‧‧‧Mask

312‧‧‧框架部 312‧‧‧Frame Department

312a‧‧‧避讓部 312a‧‧‧ Avoidance Department

321‧‧‧軸部 321‧‧‧Shaft

321h‧‧‧頭部 321h‧‧‧Head

331‧‧‧磁鐵 331‧‧‧ magnet

332‧‧‧貫通孔 332‧‧‧Through hole

351‧‧‧按壓件 351‧‧‧Pressing piece

352‧‧‧螺栓構件 352‧‧‧bolt member

353‧‧‧支承部 353‧‧‧Support

354‧‧‧螺帽構件 354‧‧‧Nut member

355‧‧‧彈性構件 355‧‧‧Elastic member

G1、G2、G3‧‧‧距離(間隙) G1, G2, G3 ‧‧‧ distance (gap)

W‧‧‧基板 W‧‧‧Substrate

圖1係顯示本發明之實施形態的成膜裝置的概略剖視圖。 FIG. 1 is a schematic cross-sectional view showing a film forming apparatus according to an embodiment of the present invention.

圖2係上述成膜裝置中的基板保持裝置之概略放大圖,且顯示保持基板前的狀態。 FIG. 2 is a schematic enlarged view of the substrate holding device in the film forming apparatus, and shows a state before holding the substrate.

圖3係上述成膜裝置中的基板保持裝置之概略放大圖,且顯示保持基板後的狀態。 FIG. 3 is a schematic enlarged view of the substrate holding device in the above film forming apparatus, and shows a state after holding the substrate.

圖4係概略地顯示上述基板保持裝置中的遮罩板、基板、中間板及磁鐵(保持板)之位置關係的側視圖。 FIG. 4 is a side view schematically showing the positional relationship of the mask plate, the substrate, the intermediate plate, and the magnet (holding plate) in the substrate holding device.

圖5係說明上述中間板已變形時的基板之保持狀態的概略側視圖。 FIG. 5 is a schematic side view illustrating the holding state of the substrate when the intermediate plate has been deformed.

圖6係說明上述基板保持裝置之作用的概略側視圖。 6 is a schematic side view illustrating the function of the above substrate holding device.

圖7係顯示上述基板保持裝置中的按壓機構之一構成例的概略側剖視圖,且顯示基板的非保持狀態。 7 is a schematic side cross-sectional view showing one configuration example of a pressing mechanism in the substrate holding device, and shows a non-holding state of the substrate.

圖8係顯示上述基板保持裝置中的按壓機構之一構成例的概略側剖視圖,且顯示即將保持基板前的狀態。 FIG. 8 is a schematic side cross-sectional view showing one configuration example of a pressing mechanism in the substrate holding device, and shows a state immediately before holding the substrate.

圖9係顯示上述基板保持裝置中的按壓機構之一構成例的概略側剖視圖,且顯示保持基板後的狀態。 FIG. 9 is a schematic side cross-sectional view showing a configuration example of a pressing mechanism in the substrate holding device, and shows a state after holding the substrate.

圖10係顯示由上述按壓機構所進行的中間板之按壓 部位部位之一例的概略俯視圖。 Fig. 10 shows the pressing of the middle plate by the above pressing mechanism A schematic plan view of an example of a part.

圖11係顯示上述按壓機構之變化例的中間板之概略俯視圖。 Fig. 11 is a schematic plan view of an intermediate plate showing a modification of the pressing mechanism.

以下,一邊參照圖式一邊說明本發明的實施形態。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.

圖1係顯示本發明之一實施形態的成膜裝置100的概略剖視圖。圖中,X軸、Y軸及Z軸係顯示彼此正交的三軸方向,X軸及Y軸係顯示水平方向,Z軸係顯示高度方向(即便是在以下的各圖中仍是同樣)。 FIG. 1 is a schematic cross-sectional view showing a film forming apparatus 100 according to an embodiment of the present invention. In the figure, the X-axis, Y-axis, and Z-axis systems show three orthogonal directions, the X-axis and Y-axis systems show the horizontal direction, and the Z-axis system shows the height direction (even in the following figures) .

[成膜裝置的整體構成] [Overall configuration of film forming apparatus]

本實施形態的成膜裝置100係構成作為真空蒸鍍裝置,且具備成膜室10、蒸發源20(成膜源)及基板保持裝置30。 The film forming apparatus 100 of this embodiment is configured as a vacuum evaporation apparatus, and includes a film forming chamber 10, an evaporation source 20 (film forming source), and a substrate holding device 30.

成膜室10係由真空室(chamber)所構成。亦即,在成膜室10係連接有未圖示的真空泵浦(pump),且構成為能夠使成膜室10的內部排氣及維持在指定的低壓氛圍中。 The film forming chamber 10 is composed of a vacuum chamber. That is, a vacuum pump (not shown) is connected to the film forming chamber 10 and is configured to allow the inside of the film forming chamber 10 to be exhausted and maintained in a predetermined low-pressure atmosphere.

成膜裝置100例如是由以搬運室為中心使包括成膜室10的複數個處理室透過閘閥(gate valve)所配置成的群集型(cluster type)的真空成膜裝置所構成。在此情況下,如圖1所示,能透過設置於上述搬運室內之未圖示的基板搬運機 器人從上述搬運室朝向成膜室10、或是從成膜室10朝向上述搬運室搬運基板W。 The film forming apparatus 100 is, for example, a cluster type vacuum film forming apparatus in which a plurality of processing chambers including the film forming chamber 10 are arranged through a gate valve around a transfer chamber. In this case, as shown in FIG. 1, it is possible to pass through a substrate conveying machine (not shown) provided in the conveying chamber The robot transports the substrate W from the transfer chamber toward the film formation chamber 10 or from the film formation chamber 10 toward the transfer chamber.

蒸發源20係用以產生蒸鍍材料(或是蒸發材料)的蒸氣者,能夠應用電阻加熱式、感應加熱式、電子束加熱式等的各種方式之蒸發源。作為蒸鍍材料係可採用金屬材料、金屬氧化物或金屬硫化物等的金屬化合物材料、合成樹脂材料、有機EL(electroluminescence:電致發光)用材料等。 The evaporation source 20 is used to generate vapor of the evaporation material (or evaporation material), and can use various types of evaporation sources such as resistance heating type, induction heating type, and electron beam heating type. As the vapor deposition material system, metal compound materials such as metal materials, metal oxides or metal sulfides, synthetic resin materials, materials for organic EL (electroluminescence), and the like can be used.

另外,蒸發源20亦可具備擋門(shutter),該擋門能夠阻止蒸氣到達由基板保持裝置30所保持的基板W。又,蒸發源20可固定於成膜室10的底部,亦可構成為能夠對成膜室10的底部及基板保持裝置30朝向水平方向相對移動。 In addition, the evaporation source 20 may also include a shutter that can prevent vapor from reaching the substrate W held by the substrate holding device 30. In addition, the evaporation source 20 may be fixed to the bottom of the film forming chamber 10, or may be configured to be relatively movable in the horizontal direction with respect to the bottom of the film forming chamber 10 and the substrate holding device 30.

[基板保持裝置] [Substrate holding device]

基板保持裝置30係配置於蒸發源20的正上方位置,且構成為能夠將應成膜的基板W保持於與蒸發源20對向的位置。基板保持裝置30係具有遮罩構件31、中間板32、保持板33及按壓機構34。 The substrate holding device 30 is arranged at a position directly above the evaporation source 20 and is configured to be able to hold the substrate W to be formed in a position facing the evaporation source 20. The substrate holding device 30 includes a cover member 31, an intermediate plate 32, a holding plate 33, and a pressing mechanism 34.

圖2及圖3係基板保持裝置30的概略放大圖,其中圖2係顯示保持基板W之前的狀態,圖3係顯示保持基板W後的狀態。 2 and 3 are schematic enlarged views of the substrate holding device 30, wherein FIG. 2 shows the state before holding the substrate W, and FIG. 3 shows the state after holding the substrate W. FIG.

遮罩構件31係與蒸發源20對向配置。遮罩構件31係透過未圖示的固定部而固定於成膜室10的內部。 The shield member 31 is arranged to face the evaporation source 20. The mask member 31 is fixed to the inside of the film forming chamber 10 through a fixing portion (not shown).

遮罩構件31係具有:遮罩板311,與基板W之成膜面對向;以及框架部312,支承遮罩板311之周緣。 The mask member 31 includes: a mask plate 311 facing the film formation of the substrate W; and a frame portion 312 supporting the periphery of the mask plate 311.

遮罩板311係由薄板所構成,該薄板係由具有指定之開口圖案(pattern)的磁性材料所構成。遮罩板311的構成材料並未被特別限定,典型上是可採用Fe(鐵)、Co(鈷)、Ni(鎳)或是此等的合金等之具有高導磁率特性(軟磁特性)的強磁性材料。又,為了抑制藉由來自成膜源(蒸發源20)之成膜時的熱輸入量而致使的遮罩板311之熱變形,亦可使用熱膨脹係數較小之鐵鎳合金(ivar)等的合金,作為遮罩板311的構成材料。遮罩板311係形成可以被覆基板W之成膜面的大小。基板W的大小並未被特別限定,在本實施形態中係採用第四代至第五代(G4至G5)之矩形玻璃基板(例如,縱向680mm至1200mm、橫向730mm至1300mm)。 The mask plate 311 is composed of a thin plate composed of a magnetic material having a prescribed opening pattern. The constituent material of the mask plate 311 is not particularly limited. Typically, Fe (iron), Co (cobalt), Ni (nickel), or alloys thereof having high permeability characteristics (soft magnetic characteristics) can be used. Strong magnetic material. In addition, in order to suppress the thermal deformation of the mask plate 311 caused by the heat input from the film forming source (evaporation source 20) during film formation, iron-nickel alloy (ivar) having a small thermal expansion coefficient or the like may be used. The alloy is used as a constituent material of the shield plate 311. The mask plate 311 has a size that can cover the film forming surface of the substrate W. The size of the substrate W is not particularly limited. In the present embodiment, a rectangular glass substrate (for example, 680 mm to 1200 mm in length and 730 mm to 1300 mm in width) of the fourth to fifth generations (G4 to G5) is used.

框架部312係固定於上述固定部,用以將遮罩板311保持於水平的姿勢。雖然框架部312亦可與遮罩板311同樣地由磁性材料所構成,但是並不限於此,亦可由非磁性構件所構成。 The frame portion 312 is fixed to the above-mentioned fixing portion for holding the shield plate 311 in a horizontal posture. Although the frame portion 312 may be composed of a magnetic material in the same manner as the shield plate 311, it is not limited to this, and may be composed of a non-magnetic member.

中間板32係配置於遮罩構件31的上方且由比基板W更大之指定厚度的矩形板材所構成。中間板32在本實施形態中係由沃斯田鐵(austenite)系不鏽鋼或鋁、銅等的非磁性材料所構成。中間板32係具有:與遮罩板311對向之下表面32a(第一面);以及其相反側之上表面32b(第二面)。中間板32之下表面32a係構成為能夠在基板保持時接觸遮罩板311對向的基板W之背面(非蒸鍍面)(圖3)。 The intermediate plate 32 is arranged above the mask member 31 and is composed of a rectangular plate material having a predetermined thickness greater than that of the substrate W. In this embodiment, the intermediate plate 32 is made of non-magnetic material such as austenitic stainless steel, aluminum, or copper. The intermediate plate 32 has a lower surface 32a (first surface) facing the mask plate 311; and an upper surface 32b (second surface) on the opposite side. The lower surface 32a of the intermediate plate 32 is configured to be able to contact the back surface (non-evaporated surface) of the substrate W opposed to the mask plate 311 when the substrate is held (FIG. 3).

亦可在中間板32的內部形成有冷卻水的循環流路。藉此,能夠在成膜中抑制基板W的溫度過度上升,且能夠將基板W冷卻至指定溫度以下。 A circulation channel for cooling water may be formed inside the intermediate plate 32. With this, it is possible to suppress an excessive increase in the temperature of the substrate W during film formation, and it is possible to cool the substrate W to a predetermined temperature or lower.

保持板33係配置於中間板32的上方,且支承成能夠將中間板32朝向與遮罩板31正交的軸向(Z軸方向)相對移動。保持板33係具有:磁鐵331,構成為能夠透過中間板32及基板W而磁性吸附遮罩板311。磁鐵331係由配置於保持板33之下表面且比基板W更大的板狀之永久磁鐵所構成。 The holding plate 33 is arranged above the intermediate plate 32 and is supported so as to be able to relatively move the intermediate plate 32 in the axial direction (Z-axis direction) orthogonal to the shield plate 31. The holding plate 33 includes a magnet 331 configured to be able to magnetically attract the shield plate 311 through the intermediate plate 32 and the substrate W. The magnet 331 is composed of a plate-shaped permanent magnet arranged on the lower surface of the holding plate 33 and larger than the substrate W.

保持板33係構成為能夠透過未圖示的升降機構對遮罩構件31朝向Z軸方向相對移動。保持板33係在保持基板W之前的狀態下,如圖2所示地採取已對遮罩板311遠離的位置(上升位置),而在保持基板W時,則如圖3所示地採取對遮罩板311鄰近的位置(下降位置)。如後面所述, 中間板32係構成為:在上升位置使其下表面32a從遮罩板311遠離達指定距離,而在下降位置使其下表面32a接觸遮罩板311(或是基板W)。 The holding plate 33 is configured to be relatively movable in the Z-axis direction by a lifting mechanism (not shown). The holding plate 33 takes a position away from the shield plate 311 (ascending position) as shown in FIG. 2 in the state before holding the substrate W, and takes a position as shown in FIG. 3 when holding the substrate W The position where the mask plate 311 is adjacent (a lowered position). As described later, The intermediate plate 32 is configured such that its lower surface 32a is separated from the mask plate 311 by a predetermined distance in the ascending position, and its lower surface 32a is in contact with the mask plate 311 (or the substrate W) in the descending position.

按壓機構34係具有:構成為能夠沿著Z軸方向按壓中間板32之上表面32b之至少一部分的複數個按壓單元35。如後所述,複數個按壓單元35係以與中間板32之上表面32b對向的方式分別配置於保持板33。 The pressing mechanism 34 has a plurality of pressing units 35 configured to press at least a part of the upper surface 32b of the intermediate plate 32 in the Z-axis direction. As will be described later, the plurality of pressing units 35 are respectively arranged on the holding plate 33 so as to face the upper surface 32b of the intermediate plate 32.

按壓機構34係用以預防因中間板32的撓曲或變形而在基板W與中間板32之間產生間隙,且具有以下的功能:在保持板33已到達下降位置時,以指定的壓力來按壓已與基板W之非蒸鍍面接觸的中間板32之上表面,藉此將中間板32的形狀矯正成平坦。 The pressing mechanism 34 is used to prevent the gap between the base plate W and the intermediate plate 32 due to the deflection or deformation of the intermediate plate 32, and has the following function: when the holding plate 33 has reached the lowered position, the specified pressure is used to By pressing the upper surface of the intermediate plate 32 that has been in contact with the non-evaporated surface of the substrate W, the shape of the intermediate plate 32 is corrected to be flat.

圖4係概略地顯示遮罩板311、基板W、中間板32及磁鐵331(保持板33)之位置關係的側視圖。在保持基板W時,藉由保持板33朝向下降位置移動來使中間板32接觸基板W的非蒸鍍面,進而藉由磁鐵331來磁性吸附遮罩板311且在中間板32與遮罩板311之間夾持基板W。 4 is a side view schematically showing the positional relationship of the mask plate 311, the substrate W, the intermediate plate 32, and the magnet 331 (holding plate 33). When holding the substrate W, the holding plate 33 moves toward the lowered position to make the intermediate plate 32 contact the non-evaporated surface of the substrate W, and the magnet 331 magnetically attracts the mask plate 311 and the intermediate plate 32 and the mask plate The substrate W is sandwiched between 311.

此時,如圖5所示,當因中間板32之變形而在基板W與中間板32之間產生間隙時,則即便是在保持板33已移動至下降位置的狀態、即已保持基板的狀態下,遮罩板311 與磁鐵331之間的距離仍會變大,且會招來使遮罩板311密接於基板W所需的磁鐵331之磁力不足的事態。於是,在本實施形態中,如圖6所示,係構成為:在保持板33已移動至下降位置的狀態下,將中間板32之上表面32b的至少一部分朝向基板W(遮罩板311)側按壓,藉此減低中間板32的變形量,且藉此維持中間板32的平面度。 At this time, as shown in FIG. 5, when a gap is generated between the substrate W and the intermediate plate 32 due to the deformation of the intermediate plate 32, even when the holding plate 33 has moved to the lowered position, that is, the substrate is held In the state, the mask plate 311 The distance between the magnet 331 and the magnet 331 will still increase, and it will attract the situation that the magnetic force of the magnet 331 required for the shield plate 311 to be in close contact with the substrate W is insufficient. Therefore, in this embodiment, as shown in FIG. 6, the holding plate 33 has been moved to the lowered position, and at least a part of the upper surface 32 b of the intermediate plate 32 is directed toward the substrate W (mask plate 311 ) Side press, thereby reducing the amount of deformation of the intermediate plate 32, and thereby maintaining the flatness of the intermediate plate 32.

複數個按壓單元35係構成為能夠分別局部地按壓中間板32之上表面。藉由按壓機構34具備複數個按壓單元35,而可容易地改善中間板32的平面度。中間板32的按壓位置(按壓單元35所配置的位置)並未被特別限定,典型上可列舉中間板32的中央部或周緣部、或是其等的雙方。 The plurality of pressing units 35 are configured to be able to locally press the upper surface of the intermediate plate 32, respectively. Since the pressing mechanism 34 includes a plurality of pressing units 35, the flatness of the intermediate plate 32 can be easily improved. The pressing position of the intermediate plate 32 (the position where the pressing unit 35 is arranged) is not particularly limited, and typically the central portion, the peripheral portion, or both of the intermediate plate 32 may be mentioned.

複數個按壓單元35典型上是分別具有相同的構成。圖7至圖9係概略地顯示按壓機構35之構成的側剖視圖,其中圖7係顯示保持基板W之前的狀態,圖8係顯示即將保持基板前的狀態,然後圖9係顯示保持基板W後的狀態。 The plurality of pressing units 35 typically have the same structure. 7 to 9 are schematic side sectional views showing the structure of the pressing mechanism 35, wherein FIG. 7 shows the state before holding the substrate W, FIG. 8 shows the state before holding the substrate W, and then FIG. 9 shows the holding substrate W after status.

在此,圖7係顯示基板W和保持板33從圖2所示的保持板33之上升位置開始下降,且基板W已載置於遮罩板311之上表面的狀態,且中間板並未接觸基板W的狀態。 Here, FIG. 7 shows a state in which the substrate W and the holding plate 33 start to descend from the rising position of the holding plate 33 shown in FIG. 2, and the substrate W has been placed on the upper surface of the mask plate 311, and the intermediate plate is not The state of contact with the substrate W.

又,為了容易理解按壓單元35之作用起見,在圖7及圖8中,中間板32係以已稍微變形的狀態(已發生撓曲的狀態)來描繪,而在圖9所示的基板W之保持狀態中係 以中間板32之撓曲已被矯正的狀態(平面狀態)來描繪。 In addition, in order to easily understand the function of the pressing unit 35, in FIGS. 7 and 8, the intermediate plate 32 is depicted in a slightly deformed state (a state in which deflection has occurred), and the substrate shown in FIG. 9 W's hold state The state where the deflection of the intermediate plate 32 has been corrected (planar state) is depicted.

在中間板32之上表面32b係設置有朝向Z軸方向延伸的複數個軸部321,在保持板33及磁鐵331係以與軸部321之位置對應的方式設置有複數個貫通孔332。複數個軸部321係分別貫通複數個貫通孔332,且在其等的上端部設置有能夠從上方抵接於貫通孔332之保持板33側開口部周緣的頭部321h。 The upper surface 32b of the intermediate plate 32 is provided with a plurality of shaft portions 321 extending in the Z-axis direction, and the holding plate 33 and the magnet 331 are provided with a plurality of through holes 332 corresponding to the positions of the shaft portions 321. The plurality of shaft portions 321 respectively pass through the plurality of through holes 332, and a head portion 321h that can abut on the periphery of the opening of the through hole 332 on the side of the holding plate 33 side is provided at the upper end thereof.

各軸部321係分別由相同的長度所構成,且在藉由中間板32的本身重量而懸吊時(例如保持板33位於上升位置時),設定為在中間板32之上表面32b與磁鐵331之下表面之間形成有距離G1的長度。藉此,中間板32就能以對保持板33支承成朝向Z軸方向最長僅達距離G1的方式而相對移動。 Each shaft portion 321 is composed of the same length, and when suspended by the weight of the intermediate plate 32 (for example, when the holding plate 33 is in the raised position), the upper surface 32b of the intermediate plate 32 and the magnet are set The length of the distance G1 is formed between the lower surfaces of 331. Thereby, the intermediate plate 32 can be relatively moved so as to support the holding plate 33 in the Z-axis direction up to the longest distance G1.

在本實施形態中,軸部321的頭部321h係形成倒圓錐梯形狀。藉此,在圖7所示的中間板32之懸吊狀態中,因可以使各軸部321的軸心與各貫通孔332的軸心一致,故而可以穩定地維持中間板32對保持板33的懸吊姿勢。另外,為了更進一步提高上述功效,各貫通孔332的保持板33側開口部亦可如圖示般,形成為與頭部321h之形狀對應的倒圓錐形之錐狀(研缽狀)。 In this embodiment, the head portion 321h of the shaft portion 321 is formed in an inverted conical trapezoid shape. Thereby, in the suspended state of the intermediate plate 32 shown in FIG. 7, since the axis of each shaft portion 321 and the axis of each through hole 332 can be aligned, the intermediate plate 32 and the holding plate 33 can be stably maintained Hanging posture. In addition, in order to further improve the above-mentioned efficiency, the opening portion of each through hole 332 on the holding plate 33 side may be formed into a conical conical shape (mortar shape) corresponding to the shape of the head portion 321h as shown.

另一方面,複數個按壓單元35係設置於保持板33,且分別配置於複數個軸部321的貫通位置。各按壓單元35係具有:按壓件351,其配置於軸部321的頭部321h之正上方位置;以及彈性構件355,其配置於按壓件351與中間板32之上表面32b之間。 On the other hand, the plurality of pressing units 35 are provided on the holding plate 33 and are respectively arranged at the penetration positions of the plurality of shaft portions 321. Each pressing unit 35 includes a pressing member 351 arranged at a position directly above the head 321h of the shaft portion 321, and an elastic member 355 arranged between the pressing member 351 and the upper surface 32b of the intermediate plate 32.

按壓件351係與Z軸方向對向地配置於軸部321的頭部321h。按壓件351例如是由圓形的板材所構成,且在其中心部固定有朝向Z軸方向延伸的螺栓構件352。螺栓構件352係以包圍軸部321之頭部321h的方式貫通在保持板33之上表面所設置的支承部353之頂部,且螺合於在支承部353之上表面所固定的螺帽構件354。從而,藉由使螺栓構件352對螺帽構件354繞軸旋轉,就能夠調整按壓件351對軸部321之頭部321h的相對距離。 The pressing member 351 is arranged on the head portion 321h of the shaft portion 321 so as to face the Z-axis direction. The pressing member 351 is made of, for example, a circular plate material, and a bolt member 352 extending in the Z-axis direction is fixed to the center portion thereof. The bolt member 352 penetrates the top of the support portion 353 provided on the upper surface of the holding plate 33 so as to surround the head 321h of the shaft portion 321, and is screwed to the nut member 354 fixed on the upper surface of the support portion 353 . Therefore, by rotating the bolt member 352 and the nut member 354 around the axis, the relative distance between the pressing member 351 and the head 321h of the shaft portion 321 can be adjusted.

彈性構件355係能夠朝向Z軸方向彈性變形,且係設置於軸部321之頭部321h之上表面。雖然彈性構件355,典型上是由螺旋彈簧(coil spring)所構成,但是並不限於此,亦可由橡膠(rubber)或彈性物(elastomer)等的彈性材料所構成。在本實施形態中係在保持板33位於第一位置的情況下,在彈性構件355之上表面與按壓件351之下表面之間形成有距離G2。距離G2係設定為比距離G1更小的值。距離G2的值亦可為零。另外,彈性構件355亦可並非設置於軸部321之頭部321h之上表面而是設置於按壓件351 之下表面。 The elastic member 355 is elastically deformable in the Z-axis direction, and is provided on the upper surface of the head portion 321h of the shaft portion 321. Although the elastic member 355 is typically constituted by a coil spring, it is not limited to this, and may be constituted by an elastic material such as rubber or elastomer. In this embodiment, when the holding plate 33 is located at the first position, a distance G2 is formed between the upper surface of the elastic member 355 and the lower surface of the pressing member 351. The distance G2 is set to a smaller value than the distance G1. The value of the distance G2 can also be zero. In addition, the elastic member 355 may be provided not on the upper surface of the head 321h of the shaft portion 321 but on the pressing member 351 Under the surface.

在本實施形態中,中間板32係相對於保持板33(磁鐵331)具有:圖7所示的第一位置;圖8所示的第二位置(接觸位置);以及圖9所示的第三位置(保持位置)。中間板32係構成為能夠經由第二位置並沿著Z軸方向而在第一位置與第三位置之間移動。 In this embodiment, the intermediate plate 32 has, with respect to the holding plate 33 (magnet 331), a first position shown in FIG. 7; a second position (contact position) shown in FIG. 8; and a first position shown in FIG. Three positions (hold position). The intermediate plate 32 is configured to be movable between the first position and the third position along the Z-axis direction via the second position.

在上述第一位置中,中間板32係由保持板33所懸吊,中間板32之下表面32a並未接觸基板W,中間板32之上表面32b係隔出間隙G1之相對距離地與保持板33(磁鐵331)對向。 In the above-mentioned first position, the intermediate plate 32 is suspended by the holding plate 33, the lower surface 32a of the intermediate plate 32 does not contact the substrate W, and the upper surface 32b of the intermediate plate 32 is held at a relative distance from the gap G1 The plate 33 (magnet 331) is opposed.

在上述第二位置中,中間板32之下表面32a係接觸基板W,保持板33係下降至按壓件351接觸彈性構件355之上表面為止,中間板32之上表面32b係隔出間隙(G1-G2)之相對距離(第一距離)地與保持板33(磁鐵331)對向。 In the above-mentioned second position, the lower surface 32a of the intermediate plate 32 contacts the substrate W, the holding plate 33 is lowered until the pressing member 351 contacts the upper surface of the elastic member 355, and the upper surface 32b of the intermediate plate 32 is separated by a gap (G1 -G2) opposite to the holding plate 33 (magnet 331) at a relative distance (first distance).

在上述第三位置中,中間板32之下表面32a的至少一部分係接觸基板W,保持板33係使彈性構件355一邊壓縮變形一邊進一步下降達指定量,中間板32之上表面32b係隔出比間隙(G1-G2)更小的間隙G3之相對距離(第二距離)地與保持板33(磁鐵331)對向。 In the above-mentioned third position, at least a part of the lower surface 32a of the intermediate plate 32 contacts the substrate W, the holding plate 33 causes the elastic member 355 to compress and deform while further lowering by a specified amount, and the upper surface 32b of the intermediate plate 32 is separated The relative distance (second distance) of the gap G3, which is smaller than the gap (G1-G2), faces the holding plate 33 (magnet 331).

因按壓單元35係構成如上,故而按壓機構34係能夠在中間板32從上述第二位置(接觸位置)朝向上述第三位置 (保持位置)移動的過程中,沿著Z軸方向而按壓中間板32之上表面32b。 Since the pressing unit 35 is configured as described above, the pressing mechanism 34 can move from the second position (contact position) toward the third position on the intermediate plate 32 (Holding position) While moving, the upper surface 32b of the intermediate plate 32 is pressed along the Z-axis direction.

保持板33的下降位置係設定在離遮罩板311指定高度的位置。在此情況下,藉由按壓機構34(按壓單元35)而致使的中間板32之按壓力係能以距離G2的大小來設定。從而,上述按壓力係可以藉由使距離G2產生變化而輕易地調整。 The lowering position of the holding plate 33 is set at a position away from the mask plate 311 by a specified height. In this case, the pressing force of the intermediate plate 32 by the pressing mechanism 34 (pressing unit 35) can be set by the distance G2. Therefore, the aforementioned pressing force can be easily adjusted by changing the distance G2.

如圖2、圖3所示,基板保持裝置30係進一步具有:支承單元36,用以在遮罩板311與中間板32之間支承被搬運至成膜室10內的基板W。支承單元36,例如是包括用以支承基板W之下表面周緣部的複數個鉤(hook)。支承單元36係構成為能夠在與未圖示之基板搬運裝置的基板收授位置(圖2)、以及將基板載置於遮罩板311的基板載置位置(圖3)之間升降移動。又,支承單元36係為了能夠進行基板W對遮罩板311的對準(alignment)而構成為能夠朝向水平方向移動。 As shown in FIGS. 2 and 3, the substrate holding device 30 further includes a support unit 36 for supporting the substrate W transported into the film forming chamber 10 between the mask plate 311 and the intermediate plate 32. The supporting unit 36 includes, for example, a plurality of hooks for supporting the peripheral portion of the lower surface of the substrate W. The support unit 36 is configured to be able to move up and down between a substrate receiving position (FIG. 2) of a substrate transfer device (not shown) and a substrate mounting position (FIG. 3) where the substrate is placed on the shield plate 311. In addition, the support unit 36 is configured to be movable in the horizontal direction so that the substrate W can be aligned with the mask plate 311.

成膜裝置100係進而具備:蒸發源20;基板保持裝置30;以及控制支承單元36等之動作的控制部40。控制部40典型上是由電腦所構成,且藉由執行指定的程式來控制各部的動作。 The film forming apparatus 100 further includes: an evaporation source 20; a substrate holding device 30; and a control unit 40 that controls operations of the support unit 36 and the like. The control unit 40 is typically constituted by a computer, and controls the operation of each unit by executing a specified program.

[成膜裝置的動作] [Operation of film forming apparatus]

接著,針對如上所構成之本實施形態的成膜裝置100之典型上的動作加以說明。 Next, a typical operation of the film forming apparatus 100 of this embodiment configured as described above will be described.

透過未圖示的閘閥而搬運至成膜室10的基板W係將成膜面向下,且藉由已在基板收授位置待機的支承單元36所支承。此時,保持板33係如圖2所示地移動至上升位置,中間板32係藉由其本身重量而從保持板33懸吊。基板W係藉由支承單元36而配置於中間板32與遮罩板311之間。之後,執行基板W對遮罩板311之水平方向的對準。 The substrate W transported to the film forming chamber 10 through a gate valve (not shown) has the film forming surface facing downward, and is supported by the support unit 36 that has been waiting at the substrate receiving position. At this time, the holding plate 33 is moved to the raised position as shown in FIG. 2, and the intermediate plate 32 is suspended from the holding plate 33 by its own weight. The substrate W is arranged between the intermediate plate 32 and the shield plate 311 by the support unit 36. After that, the alignment of the substrate W to the mask plate 311 in the horizontal direction is performed.

在基板W之對準後,支承單元36係朝向基板載置位置下降,而基板W被載置於遮罩板311之上表面。另外,在遮罩構件31之框架部312的上表面係設置有用以迴避與朝向上述基板載置位置下降的支承單元36之碰撞的複數個避讓部(凹處)312a。 After the alignment of the substrate W, the support unit 36 is lowered toward the substrate mounting position, and the substrate W is mounted on the upper surface of the shield plate 311. In addition, a plurality of escape portions (recesses) 312a are provided on the upper surface of the frame portion 312 of the mask member 31 to avoid collision with the support unit 36 descending toward the substrate placement position.

之後,保持板33從圖2所示的上升位置朝向圖3所示的下降位置移動。藉此,中間板32之下表面32a就會接觸基板W的非蒸鍍面(非成膜面),並且藉由保持板33對中間板22的相對移動,磁鐵331就會鄰近於中間板32之上表面32b。此時,磁鐵331係對中間板之上表面32b隔出些微的間隙(G3)地停止。 After that, the holding plate 33 moves from the raised position shown in FIG. 2 toward the lowered position shown in FIG. 3. Thereby, the lower surface 32a of the intermediate plate 32 will contact the non-evaporated surface (non-film-forming surface) of the substrate W, and by the relative movement of the holding plate 33 to the intermediate plate 22, the magnet 331 will be adjacent to the intermediate plate 32 Upper surface 32b. At this time, the magnet 331 stops with a slight gap (G3) to the upper surface 32b of the intermediate plate.

另一方面,中間板32之上表面32b的複數個部位,係從各按壓單元35朝向基板W及遮罩板311而分別局部地被於Z軸方向按壓,直至從圖7所示的第一位置經由圖8所示的第二位置(接觸位置)而朝向圖9所示的第三位置(保持位置)移動為止。在本實施形態中,中間板32係藉由各按壓單元35以相當於(G1-G2-G3)之距離的按壓量朝向遮罩板311按壓。此時,在中間板32已發生撓曲或變形的情況下,該等撓曲或變形被矯正成平坦,故能提高中間板32的平面度(圖9)。藉此,因能提高中間板32之下表面32a對基板W的接觸面積,故而磁鐵331與遮罩板311的相對距離亦會變短,且能提高藉由磁鐵331而致使的遮罩板311之磁性吸附力,結果,能提高基板W與遮罩板311的密接性。 On the other hand, the plural portions of the upper surface 32b of the intermediate plate 32 are partially pressed from the pressing units 35 toward the substrate W and the shield plate 311 in the Z-axis direction until the first The position moves to the third position (holding position) shown in FIG. 9 via the second position (contact position) shown in FIG. 8. In the present embodiment, the intermediate plate 32 is pressed toward the mask plate 311 by each pressing unit 35 with a pressing amount corresponding to a distance of (G1-G2-G3). At this time, when the intermediate plate 32 has been flexed or deformed, the deflection or deformation is corrected to be flat, so the flatness of the intermediate plate 32 can be improved (FIG. 9). Thereby, since the contact area between the lower surface 32a of the intermediate plate 32 and the substrate W can be increased, the relative distance between the magnet 331 and the shield plate 311 also becomes shorter, and the shield plate 311 caused by the magnet 331 can be increased As a result of the magnetic attraction force, the adhesion between the substrate W and the mask plate 311 can be improved.

如以上,中間板32、基板W及遮罩板311能保持成一體。之後,能實施基板W的成膜處理。依據本實施形態,因能藉由基板保持裝置30來確保基板W與遮罩板311的密接性,故而可以將基板W與遮罩板311的間隙形成為極小,且藉此可以阻止蒸鍍材料從該間隙繞進。 As described above, the intermediate plate 32, the substrate W, and the shield plate 311 can be kept integrated. After that, the film formation process of the substrate W can be performed. According to the present embodiment, since the substrate holding device 30 can ensure the adhesion between the substrate W and the mask plate 311, the gap between the substrate W and the mask plate 311 can be formed to be extremely small, and thereby the evaporation material can be prevented Went in from this gap.

又,藉由按壓單元35來提高中間板32的平面度,而亦能確保仿照中間板32之下表面32a的基板W之平面度。藉此可以對基板W的成膜面實現高精度的遮罩成膜處理。更且,藉由一邊使蒸發源20朝向水平方向往復移動一邊進 行成膜處理,就能夠遍及於基板W的成膜面全區域地提高成膜處理之面內均一性。 In addition, the flatness of the intermediate plate 32 is improved by the pressing unit 35, and the flatness of the substrate W imitating the lower surface 32a of the intermediate plate 32 can also be ensured. As a result, a high-precision mask forming process can be realized on the film forming surface of the substrate W. Furthermore, by reciprocating the evaporation source 20 in the horizontal direction, By performing the film forming process, the in-plane uniformity of the film forming process can be improved over the entire film forming surface of the substrate W.

在成膜處理結束後,基板保持裝置30係使保持板33從圖3所示的下降位置朝向圖2所示的上升位置移動。此時,於直到保持板33移動指定距離(相當於G1-G3的距離)為止的期間,藉由取決於按壓單元35的按壓力和中間單元的本身重量,就能維持基板W被按壓於遮罩板311的狀態。藉此,因能防止基板W對遮罩板311的位置偏移,故而能阻止已形成於成膜面的蒸鍍圖案在遮罩開口部受到損傷。又,因中間板32係由非磁性材料所構成,故而容易進行磁鐵331對遮罩板311的拉離動作。 After the film formation process is completed, the substrate holding device 30 moves the holding plate 33 from the lowered position shown in FIG. 3 to the raised position shown in FIG. 2. At this time, until the holding plate 33 moves a specified distance (equivalent to the distance of G1-G3), the substrate W can be kept pressed by the pressing force of the pressing unit 35 and the weight of the intermediate unit itself. The state of the cover plate 311. This prevents the substrate W from shifting the position of the mask plate 311, so that the vapor deposition pattern formed on the film formation surface can be prevented from being damaged at the mask opening. In addition, since the intermediate plate 32 is made of a non-magnetic material, the magnet 331 can easily pull the shield plate 311 away.

在保持板33移動至上升位置之後,支承單元36會朝向基板收授位置上升(圖2)。然後,透過未圖示的基板搬運裝置,使成膜完成的基板W朝向成膜室10外部搬出。之後,應成膜之新的基板W會朝向支承單元36搬運,且經由與上述同樣的動作,實施該基板W的保持及成膜處理。 After the holding plate 33 moves to the raised position, the support unit 36 will rise toward the substrate receiving position (FIG. 2). Then, the substrate W after the film formation is carried out toward the outside of the film forming chamber 10 through a substrate conveying device (not shown). After that, the new substrate W to be film-formed is transported toward the support unit 36, and the substrate W is held and film-formed by the same operation as described above.

如以上,中間板32係具有藉由接觸與遮罩板311對向的基板W之非成膜面來維持基板W之平面狀態的功能。另一方面,中間板32越大型化,或是中間板32的厚度越小,則有中間板32本身的平面度就越降低之虞。於是,本實施形態的基板保持裝置30係具備:將中間板32之至少 一部分朝向遮罩板311側按壓的按壓機構34。藉此,能提高中間板32的平面度,結果,亦能維持接觸中間板32的基板之平面度,且能確保與遮罩板311之優異的密接性。又,因能夠使中間板32薄化,故而能夠無關於基板尺寸地確保遮罩板311與基板W之穩定的密接力。 As described above, the intermediate plate 32 has a function of maintaining the planar state of the substrate W by contacting the non-film-forming surface of the substrate W facing the mask plate 311. On the other hand, the larger the intermediate plate 32 or the smaller the thickness of the intermediate plate 32, the lower the flatness of the intermediate plate 32 itself. Therefore, the substrate holding device 30 of this embodiment includes: Part of the pressing mechanism 34 that is pressed toward the mask plate 311 side. Thereby, the flatness of the intermediate plate 32 can be improved, and as a result, the flatness of the substrate contacting the intermediate plate 32 can also be maintained, and excellent adhesion to the mask plate 311 can be ensured. In addition, since the intermediate plate 32 can be thinned, it is possible to ensure a stable adhesion force between the mask plate 311 and the substrate W regardless of the substrate size.

又,在本實施形態的基板保持裝置30中,因按壓機構34(按壓單元35)係與中間板32之上表面32b對向所配置,故而不用在蒸發源20側設置任何機構部,就可以謀求遮罩板311與基板W的密接。為此,不用依存於遮罩板311的開口率或遮罩開口部的排列形態,就可以穩定地維持遮罩板311與基板W的密接效果。 In addition, in the substrate holding device 30 of this embodiment, since the pressing mechanism 34 (pressing unit 35) is arranged to face the upper surface 32b of the intermediate plate 32, it is not necessary to provide any mechanism on the evaporation source 20 side The mask plate 311 is in close contact with the substrate W. Therefore, the adhesion effect between the mask plate 311 and the substrate W can be stably maintained without depending on the aperture ratio of the mask plate 311 or the arrangement of the mask openings.

又,因按壓機構34係設置於保持板33,故而可以簡化裝置構成,並且能夠穩定地按壓中間板32的所期望之位置。 In addition, since the pressing mechanism 34 is provided on the holding plate 33, the device configuration can be simplified, and the desired position of the intermediate plate 32 can be stably pressed.

再者,在本實施形態的基板保持裝置30中,係構成為能夠藉由按壓機構34將中間板32朝向重力方向按壓。藉此,因亦可以利用中間板32的本身重量,來阻止因基板W或是中間板32之撓曲變形而致使的平面度之降低,故而能夠穩定地獲得所期望的成膜精度。 Furthermore, in the substrate holding device 30 of the present embodiment, the intermediate plate 32 can be pressed by the pressing mechanism 34 in the direction of gravity. Thereby, the weight of the intermediate plate 32 can also be used to prevent the flatness from being reduced due to the flexural deformation of the substrate W or the intermediate plate 32, so that the desired film forming accuracy can be stably obtained.

以上,雖然已針對本發明的實施形態加以說明,但是 本發明並非僅被限定於上述的實施形態,當然能夠施加各種的變更。 Although the embodiments of the present invention have been described above, The present invention is not limited to the above-mentioned embodiment, and of course various changes can be applied.

例如,在以上的實施形態中,雖然已舉真空蒸鍍裝置作為成膜裝置之例來加以說明,但是並不限於此,本發明亦能夠應用於濺鍍裝置(sputter device)等其他的成膜裝置。在此情況下,保持濺鍍靶材(sputter target)的濺鍍陰極(sputter cathode)係構成為成膜源。 For example, in the above embodiments, the vacuum evaporation apparatus has been described as an example of the film forming apparatus, but it is not limited to this, and the present invention can also be applied to other film forming such as a sputtering device (sputter device) Device. In this case, the sputtering cathode holding the sputtering target is configured as a film forming source.

又,構成按壓機構34的複數個按壓單元35並不限於配置於中間板32之中央部及/或周緣部的情況。如圖10所示意性顯示般,亦可按照中間板32的形狀或大小、厚度等,除了在中間板32之中央部、周緣部、四個角落部以外,還可在該等的中間位置等配置按壓單元35。按壓單元35之配置數並未被特別限定,在按壓中間板之任意一部分的情況下,只要至少有一個即可,而在按壓中間板之大致全區域的情況下,只要以窄間距配置更多的按壓單元即可。此外,如圖11所示,亦可採用能夠批量式地按壓中間板32之周緣部的框狀之按壓單元37。 In addition, the plurality of pressing units 35 constituting the pressing mechanism 34 are not limited to the case where they are arranged at the central portion and / or the peripheral portion of the intermediate plate 32. As shown schematically in FIG. 10, according to the shape, size, thickness, etc. of the intermediate plate 32, in addition to the central portion, the peripheral portion, and the four corner portions of the intermediate plate 32, it can also be at these intermediate positions, etc. The pressing unit 35 is configured. The number of arrangements of the pressing unit 35 is not particularly limited. When pressing any part of the intermediate plate, at least one is sufficient, and when pressing substantially the entire area of the intermediate plate, as long as it is arranged at a narrow pitch, Press the unit. In addition, as shown in FIG. 11, a frame-shaped pressing unit 37 capable of pressing the peripheral portion of the intermediate plate 32 in batches may be used.

然後,在以上的實施形態中,雖然已說明按壓機構34設置於保持板33之例,但是並不限於此,亦可構成為與保持板33獨立。 In the above embodiment, although the example in which the pressing mechanism 34 is provided on the holding plate 33 has been described, it is not limited to this, and may be configured independently of the holding plate 33.

Claims (8)

一種基板保持裝置,具備:遮罩板,由磁性材料所構成;中間板,具有與前述遮罩板對向的第一面、以及與前述第一面為相反側的第二面,且前述第一面構成為能夠與被配置於前述遮罩板上的基板接觸;保持板,用以將前述中間板支承成能夠在與前述遮罩板正交的軸向相對移動,且具有構成為能夠透過前述中間板及前述基板而磁性吸附前述遮罩板的磁鐵;以及按壓機構,與前述第二面對向所配置,且構成為能夠沿著前述軸向而按壓前述第二面的至少一部分;前述中間板係構成為能夠在:前述第一面的至少一部分接觸前述基板且相對於前述保持板的相對距離為第一距離的接觸位置、以及相對於前述保持板的相對距離為比前述第一距離更小之第二距離的保持位置之間移動;前述按壓機構係在前述中間板從前述接觸位置朝向前述保持位置移動的過程中沿著前述軸向而按壓前述第二面。A substrate holding device includes: a shield plate made of a magnetic material; an intermediate plate having a first surface facing the shield plate and a second surface opposite to the first surface, and the first One surface is configured to be able to contact the substrate disposed on the mask plate; a holding plate is provided to support the intermediate plate so as to be relatively movable in the axial direction orthogonal to the mask plate, and has a structure configured to be permeable The intermediate plate and the substrate to magnetically attract the magnet of the shield plate; and the pressing mechanism, which is arranged to face the second face, and is configured to be able to press at least a part of the second face along the axial direction; The intermediate plate is configured to be capable of contacting the substrate at least a part of the first surface and having a relative distance to the holding plate at a first distance and a relative distance to the holding plate at a distance greater than the first distance Moving between the holding positions of a smaller second distance; the pressing mechanism moves during the movement of the intermediate plate from the contact position toward the holding position The axially pressing the second surface. 如請求項1所記載之基板保持裝置,其中前述按壓機構係設置於前述保持板。The substrate holding device according to claim 1, wherein the pressing mechanism is provided on the holding plate. 如請求項2所記載之基板保持裝置,其中前述按壓機構係包括:複數個按壓單元,構成為能夠分別按壓前述第二面的複數個部位。The substrate holding device according to claim 2, wherein the pressing mechanism includes a plurality of pressing units configured to be able to press a plurality of parts of the second surface, respectively. 如請求項3所記載之基板保持裝置,其中前述按壓單元係具有:按壓件,與前述第二面對向所配置;以及彈性構件,配置於前述按壓件與前述第二面之間,且能夠於前述軸向彈性變形。The substrate holding device according to claim 3, wherein the pressing unit includes: a pressing member disposed facing the second surface; and an elastic member disposed between the pressing member and the second surface and capable of Elastic deformation in the aforementioned axial direction. 如請求項3所記載之基板保持裝置,其中前述按壓單元係構成為能夠按壓前述第二面的中央部及/或周緣部。The substrate holding device according to claim 3, wherein the pressing unit is configured to be able to press the central portion and / or the peripheral portion of the second surface. 如請求項1所記載之基板保持裝置,其中前述中間板係由非磁性材料所構成。The substrate holding device according to claim 1, wherein the intermediate plate is made of a non-magnetic material. 一種成膜裝置,具備:成膜室;成膜源,配置於前述成膜室;遮罩板,與前述成膜源對向所配置,且由磁性材料所構成;中間板,具有與前述遮罩板對向的第一面、以及與前述第一面為相反側的第二面,且前述第一面構成為能夠與被配置於前述遮罩板上的基板接觸;保持板,用以將前述中間板支承成能夠在與前述遮罩板正交的軸向相對移動,且具有構成為能夠透過前述中間板及前述基板而磁性吸附前述遮罩板的磁鐵;以及按壓機構,與前述第二面對向所配置,且構成為能夠沿著前述軸向而按壓前述第二面的至少一部分;前述中間板係構成為能夠在:前述第一面的至少一部分接觸前述基板且相對於前述保持板的相對距離為第一距離的接觸位置、以及相對於前述保持板的相對距離為比前述第一距離更小之第二距離的保持位置之間移動;前述按壓機構係在前述中間板從前述接觸位置朝向前述保持位置移動的過程中沿著前述軸向而按壓前述第二面。A film-forming device, comprising: a film-forming chamber; a film-forming source, arranged in the film-forming chamber; a shield plate, which is arranged opposite to the film-forming source, and is composed of a magnetic material; A first surface facing the cover plate and a second surface opposite to the first surface, and the first surface is configured to be able to contact with the substrate arranged on the cover plate; The intermediate plate is supported so as to be relatively movable in the axial direction orthogonal to the shield plate, and has a magnet configured to magnetically attract the shield plate through the intermediate plate and the substrate; and a pressing mechanism and the second Arranged facing each other, and configured to be able to press at least a portion of the second surface along the axial direction; the intermediate plate is configured to be able to contact the substrate on at least a portion of the first surface with respect to the holding plate The relative distance of the first distance is the contact position, and the relative distance with respect to the holding plate is a second distance smaller than the first distance. The pressing mechanism is The intermediate plate from the contact position toward the holding position during movement along the axial direction of the second pressing surface. 一種基板保持方法,具備以下的步驟:將基板配置於由磁性材料所構成的遮罩板上;使中間板接觸前述基板的上方;藉由按壓機構將前述中間板的至少一部分朝向前述遮罩板按壓;以及在前述中間板的上方配置具有磁性吸附前述遮罩板的磁鐵的保持板,藉此一體地保持前述中間板、前述基板及前述遮罩板;前述中間板係構成為能夠在:與前述中間板之前述遮罩板對向的第一面的至少一部分接觸前述基板且相對於前述保持板的相對距離為第一距離的接觸位置、以及相對於前述保持板的相對距離為比前述第一距離更小之第二距離的保持位置之間移動;前述按壓機構係在前述中間板從前述接觸位置朝向前述保持位置移動的過程中沿著前述軸向而按壓與前述第一面為相反側的第二面。A substrate holding method comprising the steps of arranging a substrate on a shield plate made of a magnetic material; contacting an intermediate plate above the substrate; and pressing a mechanism to direct at least a part of the intermediate plate toward the shield plate Pressing; and arranging a holding plate having a magnet that magnetically attracts the shield plate above the intermediate plate, thereby integrally holding the intermediate plate, the substrate, and the shield plate; the intermediate plate is configured to: At least a portion of the first surface of the intermediate plate opposed to the mask plate contacts the substrate at a contact distance of a first distance from the holding plate, and a relative distance from the holding plate is greater than the first position Moving between the holding positions at a second distance that is smaller; the pressing mechanism presses the opposite side of the first surface along the axial direction during the movement of the intermediate plate from the contact position toward the holding position The second side.
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