WO2024062802A1 - Mask, film forming method, and film forming apparatus - Google Patents

Mask, film forming method, and film forming apparatus Download PDF

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Publication number
WO2024062802A1
WO2024062802A1 PCT/JP2023/029421 JP2023029421W WO2024062802A1 WO 2024062802 A1 WO2024062802 A1 WO 2024062802A1 JP 2023029421 W JP2023029421 W JP 2023029421W WO 2024062802 A1 WO2024062802 A1 WO 2024062802A1
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WIPO (PCT)
Prior art keywords
mask
substrate
film forming
magnetic
forming method
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PCT/JP2023/029421
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French (fr)
Japanese (ja)
Inventor
健 長岡
正浩 市原
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キヤノントッキ株式会社
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Publication of WO2024062802A1 publication Critical patent/WO2024062802A1/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]

Definitions

  • the present invention relates to a technique for forming a film on a substrate, and relates to a mask, a film forming method, and a film forming apparatus.
  • a substrate and a mask are aligned, and then a deposition substance is evaporated onto the substrate through the mask to form a film. Film formation is performed with the aligned substrate and mask in close contact with each other.
  • a technique that uses magnetic force to bring a substrate and a mask into close contact is known. For example, a substrate is placed between a mask and a magnet plate, and the substrate and mask are brought into close contact with each other due to the magnetic force between the mask and the magnet plate (for example, Patent Document 1).
  • the mask is a magnetic material, such as a mask made of iron, it is possible to use magnetic force to bring the substrate and mask into close contact, but if the mask is a non-magnetic material, it is difficult to use magnetic force.
  • the present invention provides a technique that can improve the adhesion between a substrate and a mask while using a mask made of non-magnetic material.
  • a mask having an opening for forming a pattern of vapor deposition material on a substrate comprising: a mask body made of a non-magnetic material and having the opening; a magnetic body formed on the mask body; A mask is provided.
  • FIG. 1 is a schematic diagram of a film forming apparatus according to an embodiment of the present invention.
  • FIG. 2 is a perspective view of a substrate and a mask, and a partially enlarged view of the mask.
  • FIG. 4 is a sectional view taken along line AA in FIG. 3. Cross-sectional view of line B-B in Figure 3. A sectional view taken along the line CC in FIG. 3.
  • FIG. 3 is an explanatory diagram of the operation of the film forming apparatus shown in FIG. 2;
  • FIG. 3 is an explanatory diagram of the operation of the film forming apparatus shown in FIG. 2;
  • FIG. 3 is an explanatory diagram of the operation of the film forming apparatus shown in FIG. 2;
  • FIG. 3 is an explanatory diagram of the operation of the film forming apparatus shown in FIG. 2;
  • FIG. 1 is a schematic diagram of a film forming apparatus according to an embodiment of the present invention.
  • FIG. 2 is a perspective view of a substrate and a mask, and a partially
  • FIG. 3 is an explanatory diagram of the operation of the film forming apparatus shown in FIG. 2;
  • FIG. 3 is an explanatory diagram of the operation of the film forming apparatus shown in FIG. 2;
  • FIG. 7 is an explanatory diagram of another configuration example of the substrate.
  • FIG. 13 is an explanatory diagram of another example of the configuration of the substrate.
  • FIG. 7 is an explanatory diagram of another configuration example of the substrate.
  • FIG. 7 is an explanatory diagram of another configuration example of the substrate.
  • FIG. 7 is an explanatory diagram of another configuration example of a mask.
  • FIG. 7 is an explanatory diagram of another configuration example of a mask.
  • FIG. 1 is a schematic diagram showing a part of the configuration of an electronic device manufacturing line 100 to which the film forming apparatus of the present invention can be applied.
  • arrows X and Y indicate horizontal directions perpendicular to each other, and arrow Z indicates an up-down direction (direction of gravity).
  • the manufacturing line shown in FIG. 1 is used, for example, to manufacture light emitting elements of organic EL display devices.
  • the manufacturing line 100 includes a transfer chamber 120 having an octagonal shape in plan view. The substrate 101 is carried into the transfer chamber 120 from the transfer path 110 , and the substrate 101 on which a film has been formed is transferred from the transfer chamber 120 to the transfer path 111 .
  • a plurality of film forming apparatuses 1 that perform film forming processing on the substrate 101 are arranged around the transfer chamber 120.
  • a transfer chamber 130 is arranged adjacent to each film forming apparatus 1 .
  • a storage chamber 140 in which the mask 102 is stored is arranged around the transfer chamber 130, which has an octagonal shape in plan view.
  • a transport unit 121 that transports the substrate 101 is arranged in the transport chamber 120.
  • the transport unit 121 of this embodiment is a horizontally articulated robot, and transports the substrate 101 mounted on its hand in a horizontal position.
  • the transport unit 121 performs a transport operation in which the substrate 101 carried in from the transport path 110 is transported to the film forming apparatus 1 and a transport operation in which the substrate 101 on which a film has been formed in the film forming apparatus 1 is transported from the film forming chamber 1 to the transport path 111. Perform the action.
  • a transport unit 131 that transports the mask 102 is arranged in each transport chamber 130.
  • the transport unit 131 of this embodiment is a horizontally articulated robot, and transports the mask 102 mounted on its hand in a horizontal position.
  • the transport unit 131 performs an operation of transporting the mask 102 from the storage chamber 140 to the film forming apparatus 1 and an operation of transporting the mask 102 from the film forming apparatus 1 to the storage chamber 140.
  • FIG. 2 is a schematic diagram of a film forming apparatus 1 according to an embodiment of the present invention.
  • the film forming apparatus 1 is an apparatus that forms a film of a vapor deposition material on a substrate 101, and uses a mask 102 to form a thin film of the vapor deposition material in a predetermined pattern.
  • the material of the substrate 101 on which film formation is performed in the film formation apparatus 1 can be appropriately selected from materials such as glass, resin, and metal.
  • the substrate 101 is, for example, a glass substrate on which TFTs (Thin Film Transistors) are formed, or a silicon wafer on which semiconductor elements are formed.
  • TFTs Thin Film Transistors
  • the deposition material may be an organic material or an inorganic material (metal, metal oxide, etc.).
  • the film forming apparatus 1 is applicable to manufacturing apparatuses for manufacturing electronic devices such as display devices (such as flat panel displays), thin-film solar cells, and organic photoelectric conversion elements (organic thin-film imaging elements), as well as optical components, and is particularly applicable to manufacturing apparatuses for manufacturing organic EL panels.
  • display devices such as flat panel displays
  • organic photoelectric conversion elements organic thin-film imaging elements
  • optical components optical components
  • an example will be described in which the film forming apparatus 1 forms a film on the substrate 101 by vacuum deposition, but the present invention is not limited to this, and various film forming methods such as sputtering and CVD can be applied.
  • the film forming apparatus 1 has a box-shaped vacuum chamber 2.
  • the interior space of the vacuum chamber 2 is maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen gas.
  • the vacuum chamber 2 is connected to a vacuum pump (not shown).
  • a vapor deposition unit 10 is arranged in the interior space of the vacuum chamber 2 .
  • the vapor deposition unit 10 includes a vapor deposition source that discharges vapor deposition materials upward.
  • a shutter 10a is arranged above the vapor deposition unit 10 to regulate and release the release of the vapor deposition substance.
  • the shutter 10a is opened and closed by an opening and closing mechanism (not shown).
  • a deposition prevention plate 2a is also arranged above the vapor deposition unit 10. The deposition prevention plate 2a prevents a vapor deposition substance from unnecessarily adhering to the following structure arranged in the upper part of the internal space of the vacuum chamber 2.
  • a substrate support plate 3 that supports the substrate 101 in a horizontal position is provided in the interior space of the vacuum chamber 2.
  • the substrate support plate 3 is an electrostatic chuck, and the substrate 101 is attracted and held on the lower surface thereof by electrostatic force.
  • a cooling plate 4 is fixed on the substrate support plate 3.
  • the cooling plate 4 is equipped with, for example, a water cooling mechanism, and cools the substrate 101 via the substrate support plate 3 during film formation.
  • the substrate support plate 3 and the cooling plate 4 are suspended from the magnet plate 5 via the support portion 5a so as to be movable in the Z direction.
  • the magnet plate 11 is a plate that attracts the mask 102 by magnetic force. Since the substrate 101 is magnetically sandwiched between the magnet plate 11 and the mask 102 during film formation, the adhesion between the substrate 101 and the mask 102 can be improved.
  • the film forming apparatus 1 includes a mask support unit 6 that supports the mask 102 during film forming.
  • the mask support unit 6 also performs the operation of transferring the substrate 101 between the transport unit 121 and the substrate support plate 3.
  • the mask support unit 6 includes a pair of support members 6a spaced apart in the X direction. Each support member 6a is raised and lowered by a corresponding actuator 6b.
  • an actuator 6b is provided for each support member 6a, but a pair of support members 6a may be raised and lowered by one actuator 6b.
  • the actuator 6b is, for example, an electric cylinder or an electric ball screw mechanism.
  • the support member 6a includes a claw portion F1 at its lower end.
  • the peripheral edge portions of the substrate 101 and the mask 102 are placed on the claw portion F1.
  • the mask 102 is placed on the claw portion F1.
  • the pair of support members 6a are raised and lowered synchronously to raise and lower the substrate 101 and the mask 102.
  • the film forming apparatus 1 includes an alignment unit 8 that aligns the substrate 101 and the mask 102.
  • the alignment device 8 includes a drive mechanism 80 and a plurality of measurement units SR.
  • the drive mechanism 80 includes a distance adjustment unit 81, a support shaft 82, a pedestal 83, and a position adjustment unit 84.
  • the distance adjustment unit 81 is a mechanism that moves the support shaft 82 up and down in the Z direction, and includes, for example, an electric cylinder or an electric ball screw mechanism.
  • the magnet plate 5 is fixed to the lower end of the support shaft 82, and as the support shaft 82 moves up and down, the substrate support plate 3 is moved up and down via the magnet plate 5.
  • the distance between the substrate 101 and the mask 102 is adjusted, and the substrate 101 supported by the substrate support plate 3 and the mask 102 are brought closer to each other and separated from each other in the thickness direction (Z direction) of the substrate 101.
  • the distance adjustment unit 81 causes the substrate 101 and the mask 102 to approach each other in the direction in which they overlap, or to separate them in the opposite direction.
  • the "distance" adjusted by the distance adjustment unit 81 is a so-called vertical distance (or vertical distance), and the distance adjustment unit 81 can also be said to be a unit that adjusts the vertical position of the substrate 101.
  • the distance adjustment unit 81 is mounted on a position adjustment unit 84 via a pedestal 83.
  • the position adjustment unit 84 adjusts the relative position of the substrate 101 with respect to the mask 102 by displacing the substrate support plate 3 on the XY plane.
  • the position adjustment unit 80 can also be said to be a unit that adjusts the horizontal positions of the mask 102 and the substrate 101.
  • the position adjustment unit 80 can displace the substrate support plate 6 in a rotational direction ( ⁇ direction) around the X, Y, and Z axes.
  • the position of the mask 102 is fixed and the substrate 101 is displaced to adjust their relative positions, but the mask 102 may also be displaced to make the adjustment, or both the substrate 101 and the mask 102 may be displaced.
  • the position adjustment unit 84 includes a fixed plate 20a and a movable plate 20b.
  • the fixed plate 84a and the movable plate 84b are rectangular frame-shaped plates, and the fixed plate 84a is fixed on the upper wall portion 20 of the vacuum chamber 2.
  • An actuator is provided between the fixed plate 20a and the movable plate 20b to displace the movable plate 20b relative to the fixed plate 20a in rotational directions around the axes in the X direction, the Y direction, and the Z direction.
  • a frame-shaped pedestal 83 is mounted on the movable plate 84b, and the distance adjustment unit 81 is supported on the pedestal 83.
  • the pedestal 83 and the distance adjustment unit 81 are integrally displaced. This allows the substrate 101 to be displaced in the rotational directions around the axes in the X direction, Y direction, and Z direction.
  • the upper wall portion 20 is formed with an opening through which the support shaft 82 and the support members 6a and 7a pass. These openings are sealed by a sealing member (not shown) (such as a bellows) to maintain airtightness within the vacuum chamber 2.
  • the measurement unit SR measures the positional deviation between the substrate 101 and the mask 102.
  • the measurement unit SR of this embodiment is an imaging device (camera) that captures an image.
  • the measurement unit SR is arranged on the upper wall portion 20 and is capable of capturing an image inside the vacuum chamber 2 .
  • Alignment marks (not shown) are formed on the substrate 101 and the mask 102, respectively.
  • the measurement unit SR photographs each alignment mark on the substrate 101 and the mask 102.
  • the amount of positional deviation between the substrate 101 and the mask 102 is calculated based on the position of each alignment mark, and the relative position between the substrate 101 and the mask 102 is adjusted by the position adjustment unit 84 so as to eliminate the amount of positional deviation.
  • the control device 9 controls the entire film forming apparatus 1.
  • the control device 9 includes a processing section 90, a storage section 91, an input/output interface (I/O) 92, and a communication section 93.
  • the processing unit 90 is a processor represented by a CPU, and controls the film forming apparatus 1 by executing a program stored in the storage unit 92 .
  • the storage unit 91 is a storage device such as a ROM, RAM, or HDD, and stores various control information in addition to programs executed by the processing unit 90.
  • the I/O 92 is an interface that transmits and receives signals between the processing unit 90 and external devices.
  • the communication unit 93 is a communication device that communicates with a host device or other control device via a communication line.
  • FIG. 3 shows an example of a substrate 101, a mask 102, and an electrostatic chuck 103.
  • the substrate 101 is a circular silicon wafer, and after film formation and the like, a plurality of chips 101a are cut out from the substrate 101.
  • the mask 102 is a circular member like the substrate 101, and includes a mask portion 102b corresponding to each chip 101a and a frame portion 102a surrounding the mask portion 102b.
  • a plurality of openings (through holes) 102c are formed in the mask portion 102b, through which a vapor deposition material to be vapor-deposited on the substrate 101 passes, and a film formation pattern on the substrate 101 is defined by the arrangement of the openings 102c.
  • the mask 102 includes a mask body 1020 and a magnetic body 1021 formed on the mask body 1020.
  • the mask body 1020 is made of a non-magnetic material such as silicon (Si).
  • Si silicon
  • the frame portion 102a is a relatively thick portion, and the mask portion 102b is a relatively thin portion.
  • the frame portion 102a has higher rigidity than the mask portion 102b.
  • the mask portion 102b can be formed thin without significantly reducing the overall rigidity of the mask 102.
  • a plurality of slits 102d are formed on the surface of the mask body 102.
  • Each slit 102d is a bottomed groove formed in the mask portion 102b and having a cross shape in plan view.
  • the magnetic body 1021 is, for example, a thin film of a magnetic material such as nickel (Ni).
  • the magnetic force of the magnet plate 5 causes the mask 102 and the substrate 101 to adhere to each other during film formation. If the mask body 1020 is made of a non-magnetic material as in this embodiment, the magnetic force does not provide an adhesive effect.
  • the magnetic force of the magnet plate 5 acts on the magnetic body 1021, and the magnetic force provides an adhesive effect between the mask 102 and the substrate 101.
  • the magnetic material 1021 of this embodiment is formed on the surface of the mask body 1020, particularly on the surface that overlaps with the substrate 101.
  • the close contact effect between the mask 102 and the substrate 101 due to magnetic force can be obtained.
  • the magnetic body 1021 is formed so as to surround each opening 102c, and particularly in this embodiment, the magnetic body 1021 is formed as a whole in a lattice shape in which vertical and horizontal lines are orthogonal to each other.
  • the adhesion to the substrate 101 due to the magnetic force around the opening 102c can be improved, and the deposition material released through the opening 102c can be accurately deposited on a target portion of the substrate 101.
  • Control example> An example of control of the film forming apparatus 1 executed by the processing section 90 of the control unit 9 will be described.
  • 5 to 9 are explanatory diagrams of the operation of the film forming apparatus 1, and show examples from carrying in the substrate 101 to forming a film and carrying it out.
  • a state ST51 in FIG. 5 shows a state in which the substrate 101 is carried into the vacuum chamber 2.
  • the substrate 101 is transported below the substrate support plate 3 by the transport robot 121.
  • the substrate suction surface 3a on the lower surface of the substrate support plate 3 is horizontal.
  • the mask support unit 6 transfers the substrate 101 from the transfer robot 121 to the substrate support plate 3 .
  • State ST52 in FIG. 5 shows the operation.
  • the support member 6a By lifting the support member 6a, the peripheral edge of the substrate 101 is placed on the claw portion F1, the substrate 101 is lifted from the transfer robot 121, and is pressed against the substrate suction surface 3a of the substrate support plate 3.
  • the electrostatic chuck of the substrate support plate 3 is activated to attract and hold the substrate 101.
  • a state ST61 in FIG. 6 shows a state in which the mask 102 is carried into the vacuum chamber 2.
  • the mask 102 is carried into the vacuum chamber 2 from the storage chamber 140 by the transfer robot 131.
  • Mask 102 is located directly below substrate 101.
  • the mask 102 is transferred from the transfer robot 131 to the mask support unit 6 and positioned at an alignment position.
  • State ST62 in FIG. 6 shows this operation.
  • the support member 6a By lifting the support member 6a, the peripheral edge of the mask 102 is placed on the claw portion F1, and the mask 102 is lifted from the transfer robot 131.
  • the mask 102 is in a state of being supported by the support member 6a, and is further raised to the alignment position. In this embodiment, the mask 102 is raised and positioned at the alignment position, but a configuration may also be adopted in which the substrate 101 is lowered and the substrate 101 is positioned at the alignment position.
  • the measurement unit SR measures the relative positions of the alignment marks on the substrate 101 and the alignment marks on the mask 102. If the measurement result (the amount of positional deviation between the substrate 101 and the mask 102) is within the allowable range, the alignment operation is finished. If the measurement result is outside the allowable range, a control amount (displacement amount of the substrate 101) is set based on the measurement result to keep the positional deviation amount within the allowable range.
  • the "positional deviation amount” is defined by the distance and direction (X, Y, ⁇ ) of positional deviation. Based on the set control amount, the position adjustment unit 80 is operated as shown in state ST72 in FIG. As a result, the substrate support plate 3 is displaced on the XY plane, and the relative position of the substrate 101 with respect to the mask 102 is adjusted.
  • Whether or not the measurement results are within the allowable range can be determined, for example, by calculating the distances between the alignment marks and comparing the average value or sum of squares of the distances with a preset threshold. can.
  • the measurement unit SR measures the relative positions of the alignment marks on the substrate 101 and the alignment marks on the mask 102 again. If the measurement result is within the allowable range, the alignment operation is finished. If the measurement result is outside the allowable range, the relative position of the substrate 101 with respect to the mask 102 is adjusted again. Thereafter, measurements and relative position adjustments are repeated until the measurement results fall within the allowable range.
  • a film forming operation is performed.
  • the substrate 101 and the mask 102 are overlapped.
  • State ST81 in FIG. 8 shows the operation.
  • the substrate support plate 3 is lowered, the substrate 101 is placed on the mask 102 , and the entire surface of the substrate 101 to be processed comes into contact with the mask 102 .
  • the magnet plate 5 comes into contact with the cooling plate 4, and the magnet plate 5, the cooling plate 4, the substrate support plate 3, the substrate 101, and the mask 102 are in close contact with each other in order from the top.
  • the mask 102 is attracted by the magnetic force of the magnet plate 5, and the mask 102 and the substrate 101 can be brought into close contact with each other as a whole. Since the magnetic material 1021 (FIGS.
  • the adhesion between the substrate 101 and the mask 102 can be improved while using the mask 102 made of a non-magnetic material. Furthermore, even if stress is generated in the mask body 1020 due to the action of magnetic force, deformation is allowed by the slit 102d, and damage such as cracking of the mask 1020 can be prevented.
  • State ST91 in FIG. 9 shows the operation of carrying out the mask 102.
  • the magnet plate 5 is lifted, and the substrate 101 and the mask 102 are separated.
  • the support member 6a of the mask support unit 6 is lowered, and the mask 102 is transferred from the support member 6a to the transfer robot 131.
  • the transport robot 131 transports the mask 102 to the storage chamber 140.
  • the substrate 101 on which the film has been formed is carried out.
  • the support member 6a of the mask support unit 6 is raised to support the substrate 101 from below by the claws F1.
  • the adsorption of the substrate support unit 3 to the substrate 101 is released, and the substrate 101 is transferred to the support member 6a.
  • the support member 6a of the mask support unit 6 is lowered as shown in state ST92 in FIG. 9, and the substrate 101 is transferred from the support member 6a to the transfer robot 121. Transfer.
  • the transport robot 121 transports the substrate 101 to the transport path 111. As described above, the operations from carrying in the substrate 101 to forming a film and carrying it out are completed.
  • FIGS. 10A and 10B show an example. These figures correspond to the cross-sectional view of FIG. 4B, and also show a cross-sectional view of the substrate 101 aligned with the mask 102.
  • a magnetic material 101d is formed on the substrate 101 around one pixel region 101b, which is a region to be vapor-deposited.
  • the magnetic material 101d is formed on the surface of the bank 101c around one pixel region 101b.
  • the magnetic body 101d is, for example, a thin film of a magnetic material such as nickel (Ni).
  • Ni nickel
  • FIG. 10B shows a state in which the substrate 101 and the mask 102 are overlapped with each other after the substrate 101 and the mask 102 are aligned.
  • the magnetic force of the magnet plate 5 attracts the magnetic body 101d and the magnetic body 1021 to each other, improving the adhesion between the substrate 101 and the mask 102.
  • the relative position between the opening 102c and the one pixel region 101b is self-aligned, and the one pixel region 101b, which is the vapor deposition target region, is exposed to the one pixel region 101b through the opening 102c.
  • the deposition substance can be deposited more accurately.
  • FIGS. 11A and 11B show an example. These figures correspond to the cross-sectional view of FIG. 4B, and also show a cross-sectional view of the substrate 101 aligned with the mask 102.
  • a magnet 101e is formed on the substrate 101 around one pixel region 101b, which is a region to be vapor-deposited.
  • the magnet 101e is formed on the surface of the bank 101c around one pixel region 101b.
  • the magnet 101e is, for example, a thin film of a magnetic material such as nickel or cobalt.
  • the magnet 101e and the magnetic body 1021 are arranged at a portion where the substrate 101 and the mask 102 overlap each other when properly aligned.
  • FIG. 11B shows a state in which the substrate 101 and the mask 102 are overlapped with each other after the substrate 101 and the mask 102 are aligned.
  • the magnet 101e and the magnetic body 1021 attract each other, improving the adhesion between the substrate 101 and the mask 102.
  • the relative position between the opening 102c and the one pixel area 101b is self-aligned, and the one pixel area 101b, which is the evaporation target site, is exposed to the one pixel area 101b through the opening 102c. Vapor deposition substances can be deposited accurately.
  • FIGS. 12A to 12C Each of these figures corresponds to the cross-sectional view of FIG. 4B.
  • FIG. 12A shows a configuration example in which a spacer 1022 is interposed between the magnetic body 1021 and the mask body 1020.
  • the distance in the Z direction between the end of the opening 102c and the substrate 101 can be designed to a desired distance.
  • an elastic material is used as the spacer 1022, it is possible to reduce the impact when the substrate 101 and the mask 102 are brought into close contact with each other.
  • magnetic material 1021A which replaces magnetic material 1021, includes a portion 1021a formed on the inner circumferential surface of opening 102c in addition to the surface of mask body 1020.
  • a magnetic body 1021B replacing the magnetic body 1021 includes a portion 1021b formed on the inner peripheral surface of the opening 102c in addition to the surface of the mask body 1020, as in the example of FIG. 11B.
  • the magnetic material 1021B is formed on the surface of the mask body 1020 that is opposite to the substrate 101 (the surface that does not overlap).
  • the magnetic material 1021B is not interposed between the substrate 101 and the mask 102 when the substrate 101 and the mask 102 are in close contact with each other. In some cases, the parallelism between the mask 102 and the mask 102 can be improved.
  • the present invention provides a system or device with a program that implements one or more functions of the embodiments described above via a network or a storage medium, and one or more processors in a computer of the system or device reads and executes the program. This can also be achieved by processing. It can also be realized by a circuit (for example, ASIC) that realizes one or more functions.
  • a circuit for example, ASIC

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Abstract

This mask has an opening for forming a film of a pattern made of a vapor deposition material on a substrate and includes a mask body made of a non-magnetic substance and having the opening and a magnetic body formed on the mask body.

Description

マスク、成膜方法及び成膜装置Mask, film-forming method and film-forming equipment
　本発明は、基板に成膜する技術に関し、マスク、成膜方法及び成膜装置に関する。 The present invention relates to a technique for forming a film on a substrate, and relates to a mask, a film forming method, and a film forming apparatus.
　基板とマスクとのアライメントを行い、その後、マスクを介して基板に対して蒸着物質を蒸着し、成膜する技術が知られている。成膜は、アライメントが行われた基板とマスクとを互いに密着した状態で行われる。基板とマスクとを密着させるために、磁力を利用した技術が知られている。例えば、基板をマスクとマグネットプレートとの間に配置してマスクとマグネットプレートとの間の磁力により基板とマスクとが密着する（例えば特許文献１）。 There is a known technique in which a substrate and a mask are aligned, and then a deposition substance is evaporated onto the substrate through the mask to form a film. Film formation is performed with the aligned substrate and mask in close contact with each other. A technique that uses magnetic force to bring a substrate and a mask into close contact is known. For example, a substrate is placed between a mask and a magnet plate, and the substrate and mask are brought into close contact with each other due to the magnetic force between the mask and the magnet plate (for example, Patent Document 1).
国際公開第２０１７／２２２００９号パンフレットInternational Publication No. 2017/222009 pamphlet
　鉄製のマスクのようにマスクが磁性体であれば、磁力を利用して基板とマスクとを密着させることができるが、マスクが非磁性体の場合、磁力を利用することは困難である。 If the mask is a magnetic material, such as a mask made of iron, it is possible to use magnetic force to bring the substrate and mask into close contact, but if the mask is a non-magnetic material, it is difficult to use magnetic force.
　本発明は、非磁性体製のマスクを用いつつ、基板とマスクの密着性を向上可能な技術を提供するものである。 The present invention provides a technique that can improve the adhesion between a substrate and a mask while using a mask made of non-magnetic material.
　本発明によれば、
　基板上に蒸着物質のパターンを成膜するための開口部を有するマスクであって、
　前記開口部を有し、非磁性体のマスク本体と、
　前記マスク本体に形成された磁性体と、を備える、
ことを特徴とするマスクが提供される。 According to the invention,
A mask having an opening for forming a pattern of vapor deposition material on a substrate, the mask comprising:
a mask body made of a non-magnetic material and having the opening;
a magnetic body formed on the mask body;
A mask is provided.
　本発明によれば、非磁性体製のマスクを用いつつ、基板とマスクの密着性を向上可能な技術を提供することができる。 According to the present invention, it is possible to provide a technique that can improve the adhesion between a substrate and a mask while using a mask made of a non-magnetic material.
電子デバイスの製造ラインの一部の模式図。A schematic diagram of part of an electronic device manufacturing line. 本発明の一実施形態に係る成膜装置の概略図。1 is a schematic diagram of a film forming apparatus according to an embodiment of the present invention. 基板及びマスクの斜視図及びマスクの部分拡大図。FIG. 2 is a perspective view of a substrate and a mask, and a partially enlarged view of the mask. 図３のＡ－Ａ線断面図。FIG. 4 is a sectional view taken along line AA in FIG. 3. 図３のＢ－Ｂ線断面図。Cross-sectional view of line B-B in Figure 3. 図３のＣ－Ｃ線断面図。A sectional view taken along the line CC in FIG. 3. 図２の成膜装置の動作説明図。FIG. 3 is an explanatory diagram of the operation of the film forming apparatus shown in FIG. 2; 図２の成膜装置の動作説明図。FIG. 3 is an explanatory diagram of the operation of the film forming apparatus shown in FIG. 2; 図２の成膜装置の動作説明図。FIG. 3 is an explanatory diagram of the operation of the film forming apparatus shown in FIG. 2; 図２の成膜装置の動作説明図。FIG. 3 is an explanatory diagram of the operation of the film forming apparatus shown in FIG. 2; 図２の成膜装置の動作説明図。FIG. 3 is an explanatory diagram of the operation of the film forming apparatus shown in FIG. 2; 基板の別の構成例の説明図。FIG. 7 is an explanatory diagram of another configuration example of the substrate. 基板の別の構成例の説明図。FIG. 13 is an explanatory diagram of another example of the configuration of the substrate. 基板の別の構成例の説明図。FIG. 7 is an explanatory diagram of another configuration example of the substrate. 基板の別の構成例の説明図。FIG. 7 is an explanatory diagram of another configuration example of the substrate. マスクの別の構成例の説明図。FIG. 7 is an explanatory diagram of another configuration example of a mask. マスクの別の構成例の説明図。FIG. 7 is an explanatory diagram of another configuration example of a mask. マスクの別の構成例の説明図。FIG. 7 is an explanatory diagram of another configuration example of a mask.
　以下、添付図面を参照して実施形態を詳しく説明する。尚、以下の実施形態は特許請求の範囲に係る発明を限定するものではない。実施形態には複数の特徴が記載されているが、これらの複数の特徴の全てが発明に必須のものとは限らず、また、複数の特徴は任意に組み合わせられてもよい。さらに、添付図面においては、同一若しくは同様の構成に同一の参照番号を付し、重複した説明は省略する。 Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. Note that the following embodiments do not limit the claimed invention. Although a plurality of features are described in the embodiments, not all of these features are essential to the invention, and the plurality of features may be arbitrarily combined. Furthermore, in the accompanying drawings, the same or similar components are designated by the same reference numerals, and redundant description will be omitted.
　＜第一実施形態＞
　＜電子デバイスの製造ライン＞
　図１は、本発明の成膜装置が適用可能な電子デバイスの製造ライン１００の構成の一部を示す模式図である。各図において、矢印Ｘ及びＹは互いに直交する水平方向を示し、矢印Ｚは上下方向（重力方向）を示す。図１の製造ラインは、例えば、有機ＥＬ表示装置の発光素子の製造に用いられる。製造ライン１００は、平面視で八角形の形状を有する搬送室１２０を備える。搬送室１２０には搬送路１１０から基板１０１が搬入され、また、成膜済みの基板１０１は搬送室１２０から搬送路１１１へ搬出される。 <First embodiment>
<Electronic device manufacturing line>
FIG. 1 is a schematic diagram showing a part of the configuration of an electronic device manufacturing line 100 to which the film forming apparatus of the present invention can be applied. In each figure, arrows X and Y indicate horizontal directions perpendicular to each other, and arrow Z indicates an up-down direction (direction of gravity). The manufacturing line shown in FIG. 1 is used, for example, to manufacture light emitting elements of organic EL display devices. The manufacturing line 100 includes a transfer chamber 120 having an octagonal shape in plan view. The substrate 101 is carried into the transfer chamber 120 from the transfer path 110 , and the substrate 101 on which a film has been formed is transferred from the transfer chamber 120 to the transfer path 111 .
　搬送室１２０の周囲には、基板１０１に対する成膜処理が行われる複数の成膜装置１が配置されている。各成膜装置１には搬送室１３０が隣接して配置されている。平面視で八角形の形状を有する搬送室１３０の周囲には、マスク１０２が収納される格納室１４０が配置されている。 A plurality of film forming apparatuses 1 that perform film forming processing on the substrate 101 are arranged around the transfer chamber 120. A transfer chamber 130 is arranged adjacent to each film forming apparatus 1 . A storage chamber 140 in which the mask 102 is stored is arranged around the transfer chamber 130, which has an octagonal shape in plan view.
　搬送室１２０には、基板１０１を搬送する搬送ユニット１２１が配置されている。本実施形態の搬送ユニット１２１は、水平多関節型のロボットであり、そのハンド部に基板１０１を水平姿勢で搭載して搬送する。搬送ユニット１２１は、搬送路１１０から搬入される基板１０１を成膜装置１へ搬送する搬入動作と、成膜装置１で成膜済みの基板１０１を成膜室１から搬送路１１１へ搬送する搬出動作とを行う。 A transport unit 121 that transports the substrate 101 is arranged in the transport chamber 120. The transport unit 121 of this embodiment is a horizontally articulated robot, and transports the substrate 101 mounted on its hand in a horizontal position. The transport unit 121 performs a transport operation in which the substrate 101 carried in from the transport path 110 is transported to the film forming apparatus 1 and a transport operation in which the substrate 101 on which a film has been formed in the film forming apparatus 1 is transported from the film forming chamber 1 to the transport path 111. Perform the action.
　各搬送室１３０には、マスク１０２を搬送する搬送ユニット１３１が配置されている。本実施形態の搬送ユニット１３１は、水平多関節型のロボットであり、そのハンド部にマスク１０２を水平姿勢で搭載して搬送する。搬送ユニット１３１は、格納室１４０から成膜装置１へマスク１０２を搬送する動作、成膜装置１から格納室１４０へマスク１０２を搬送する動作を行う。 A transport unit 131 that transports the mask 102 is arranged in each transport chamber 130. The transport unit 131 of this embodiment is a horizontally articulated robot, and transports the mask 102 mounted on its hand in a horizontal position. The transport unit 131 performs an operation of transporting the mask 102 from the storage chamber 140 to the film forming apparatus 1 and an operation of transporting the mask 102 from the film forming apparatus 1 to the storage chamber 140.
　＜成膜装置＞
　図２は本発明の一実施形態に係る成膜装置１の概略図である。成膜装置１は、基板１０１に蒸着物質を成膜する装置であり、マスク１０２を用いて所定のパターンの蒸着物質の薄膜を形成する。成膜装置１で成膜が行われる基板１０１の材質は、ガラス、樹脂、金属等の材料を適宜選択可能である。特に本実施形態では、基板１０１は、例えば、ＴＦＴ（Thin Film Transistor）が形成されたガラス基板や半導体素子が形成されたシリコンウエハである。 <Film forming equipment>
FIG. 2 is a schematic diagram of a film forming apparatus 1 according to an embodiment of the present invention. The film forming apparatus 1 is an apparatus that forms a film of a vapor deposition material on a substrate 101, and uses a mask 102 to form a thin film of the vapor deposition material in a predetermined pattern. The material of the substrate 101 on which film formation is performed in the film formation apparatus 1 can be appropriately selected from materials such as glass, resin, and metal. Particularly in this embodiment, the substrate 101 is, for example, a glass substrate on which TFTs (Thin Film Transistors) are formed, or a silicon wafer on which semiconductor elements are formed.
　蒸着物質としては、有機材料、無機材料（金属、金属酸化物など）などの物質である。成膜装置１は、例えば表示装置（フラットパネルディスプレイなど）や薄膜太陽電池、有機光電変換素子（有機薄膜撮像素子）等の電子デバイスや、光学部材等を製造する製造装置に適用可能であり、特に、有機ＥＬパネルを製造する製造装置に適用可能である。以下の説明においては成膜装置１が真空蒸着によって基板１０１に成膜を行う例について説明するが、本発明はこれに限定はされず、スパッタやＣＶＤ等の各種成膜方法を適用可能である。 The deposition material may be an organic material or an inorganic material (metal, metal oxide, etc.). The film forming apparatus 1 is applicable to manufacturing apparatuses for manufacturing electronic devices such as display devices (such as flat panel displays), thin-film solar cells, and organic photoelectric conversion elements (organic thin-film imaging elements), as well as optical components, and is particularly applicable to manufacturing apparatuses for manufacturing organic EL panels. In the following explanation, an example will be described in which the film forming apparatus 1 forms a film on the substrate 101 by vacuum deposition, but the present invention is not limited to this, and various film forming methods such as sputtering and CVD can be applied.
　成膜装置１は、箱型の真空チャンバ２を有する。真空チャンバ２の内部空間は、真空雰囲気か、窒素ガスなどの不活性ガス雰囲気に維持されている。本実施形態では、真空チャンバ２は不図示の真空ポンプに接続されている。真空チャンバ２の内部空間には、蒸着ユニット１０が配置されている。蒸着ユニット１０は、蒸着物資を上方に放出する蒸着源を備える。蒸着ユニット１０の上方には蒸着物質の放出の規制と規制解除を行うシャッタ１０ａが配置されている。シャッタ１０ａは不図示の開閉機構により開閉される。図２はシャッタ１０ａが閉状態の場合を示しており、蒸着ユニット１０による蒸着物質の放出が規制される。蒸着ユニット１０の上方には、また、防着板２ａが配置されている。防着板２ａは、真空チャンバ２の内部空間の上部に配置される以下の構成に、蒸着物質が不必要に付着することを防止する。 The film forming apparatus 1 has a box-shaped vacuum chamber 2. The interior space of the vacuum chamber 2 is maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen gas. In this embodiment, the vacuum chamber 2 is connected to a vacuum pump (not shown). A vapor deposition unit 10 is arranged in the interior space of the vacuum chamber 2 . The vapor deposition unit 10 includes a vapor deposition source that discharges vapor deposition materials upward. A shutter 10a is arranged above the vapor deposition unit 10 to regulate and release the release of the vapor deposition substance. The shutter 10a is opened and closed by an opening and closing mechanism (not shown). FIG. 2 shows a case where the shutter 10a is in a closed state, and the release of the vapor deposition substance by the vapor deposition unit 10 is regulated. A deposition prevention plate 2a is also arranged above the vapor deposition unit 10. The deposition prevention plate 2a prevents a vapor deposition substance from unnecessarily adhering to the following structure arranged in the upper part of the internal space of the vacuum chamber 2.
　真空チャンバ２の内部空間には、基板１０１を水平姿勢で支持する基板支持プレート３が設けられている。本実施形態の場合、基板支持プレート３は静電チャックであり、その下面に静電気力により基板１０１を吸着し、保持する。基板支持プレート３上には冷却プレート４が固定されている。冷却プレート４は例えば水冷機構等を備えており、基板支持プレート３を介して成膜時に基板１０１を冷却する。 A substrate support plate 3 that supports the substrate 101 in a horizontal position is provided in the interior space of the vacuum chamber 2. In the case of this embodiment, the substrate support plate 3 is an electrostatic chuck, and the substrate 101 is attracted and held on the lower surface thereof by electrostatic force. A cooling plate 4 is fixed on the substrate support plate 3. The cooling plate 4 is equipped with, for example, a water cooling mechanism, and cools the substrate 101 via the substrate support plate 3 during film formation.
　基板支持プレート３と冷却プレート４とは、支持部５ａを介してＺ方向に変位可能に磁石プレート５に吊り下げられている。磁石プレート１１は、磁力によってマスク１０２を引き寄せるプレートである。成膜時に基板１０１は磁石プレート１１とマスク１０２との間に磁力によって挟まれるので、基板１０１とマスク１０２の密着性を向上することができる。 The substrate support plate 3 and the cooling plate 4 are suspended from the magnet plate 5 via the support portion 5a so as to be movable in the Z direction. The magnet plate 11 is a plate that attracts the mask 102 by magnetic force. Since the substrate 101 is magnetically sandwiched between the magnet plate 11 and the mask 102 during film formation, the adhesion between the substrate 101 and the mask 102 can be improved.
　成膜装置１は、成膜時にマスク１０２を支持するマスク支持ユニット６を備える。マスク支持ユニット６は、本実施形態の場合、搬送ユニット１２１と基板支持プレート３との間の基板１０１の移載動作も行う。マスク支持ユニット６は、Ｘ方向に離間した一対の支持部材６ａを備える。各支持部材６ａは対応するアクチュエータ６ｂにより昇降される。本実施形態ではアクチュエータ６ｂを支持部材６ａ毎に設けたが、一対の支持部材６ａを一つのアクチュエータ６ｂで昇降してもよい。アクチュエータ６ｂは例えば電動シリンダや、電動ボールねじ機構である。支持部材６ａは、その下端部に爪部Ｆ１を備えている。基板１０１やマスク１０２は、その周縁部が爪部Ｆ１上に載置される。図２の例ではマスク１０２が爪部Ｆ１上に載置されている。一対の支持部材６ａは同期的に昇降され、基板１０１やマスク１０２を昇降する。 The film forming apparatus 1 includes a mask support unit 6 that supports the mask 102 during film forming. In this embodiment, the mask support unit 6 also performs the operation of transferring the substrate 101 between the transport unit 121 and the substrate support plate 3. The mask support unit 6 includes a pair of support members 6a spaced apart in the X direction. Each support member 6a is raised and lowered by a corresponding actuator 6b. In this embodiment, an actuator 6b is provided for each support member 6a, but a pair of support members 6a may be raised and lowered by one actuator 6b. The actuator 6b is, for example, an electric cylinder or an electric ball screw mechanism. The support member 6a includes a claw portion F1 at its lower end. The peripheral edge portions of the substrate 101 and the mask 102 are placed on the claw portion F1. In the example of FIG. 2, the mask 102 is placed on the claw portion F1. The pair of support members 6a are raised and lowered synchronously to raise and lower the substrate 101 and the mask 102.
　成膜装置１は、基板１０１とマスク１０２とのアライメントを行うアライメントユニット８を備える。アライメント装置８は、駆動機構８０と、複数の計測ユニットＳＲとを備える。駆動機構８０は、距離調整ユニット８１と、支持軸８２と、架台８３と、位置調整ユニット８４と、を備える。 The film forming apparatus 1 includes an alignment unit 8 that aligns the substrate 101 and the mask 102. The alignment device 8 includes a drive mechanism 80 and a plurality of measurement units SR. The drive mechanism 80 includes a distance adjustment unit 81, a support shaft 82, a pedestal 83, and a position adjustment unit 84.
　距離調整ユニット８１は、支持軸８２をＺ方向に昇降する機構であり、例えば、電動シリンダや、電動ボールねじ機構を備える。支持軸８２の下端部には磁石プレート５が固定されており、支持軸８２の昇降によって、磁石プレート５を介して基板支持プレート３が昇降される。基板支持プレート３を昇降することで、基板１０１とマスク１０２との距離を調整し、基板支持プレート３に支持された基板１０１とマスク１０２とを基板１０１の厚み方向（Ｚ方向）に接近及び離隔（離間）させる。換言すれば、距離調整ユニット８１は、基板１０１とマスク１０２とを重ね合わせる方向に接近させたり、その逆方向に離隔させたりする。なお、距離調整ユニット８１によって調整する「距離」はいわゆる垂直距離（又は鉛直距離）であり、距離調整ユニット８１は、基板１０１の垂直位置を調整するユニットであるとも言える。距離調整ユニット８１は、架台８３を介して位置調整ユニット８４に搭載されている。 The distance adjustment unit 81 is a mechanism that moves the support shaft 82 up and down in the Z direction, and includes, for example, an electric cylinder or an electric ball screw mechanism. The magnet plate 5 is fixed to the lower end of the support shaft 82, and as the support shaft 82 moves up and down, the substrate support plate 3 is moved up and down via the magnet plate 5. By raising and lowering the substrate support plate 3, the distance between the substrate 101 and the mask 102 is adjusted, and the substrate 101 supported by the substrate support plate 3 and the mask 102 are brought closer to each other and separated from each other in the thickness direction (Z direction) of the substrate 101. (separate) In other words, the distance adjustment unit 81 causes the substrate 101 and the mask 102 to approach each other in the direction in which they overlap, or to separate them in the opposite direction. Note that the "distance" adjusted by the distance adjustment unit 81 is a so-called vertical distance (or vertical distance), and the distance adjustment unit 81 can also be said to be a unit that adjusts the vertical position of the substrate 101. The distance adjustment unit 81 is mounted on a position adjustment unit 84 via a pedestal 83.
　位置調整ユニット８４は、基板支持プレート３をＸ－Ｙ平面上で変位することにより、マスク１０２に対する基板１０１の相対位置を調整する。すなわち、位置調整ユニット８０は、マスク１０２と基板１０１の水平位置を調整するユニットであるとも言える。位置調整ユニット８０は、基板支持プレート６をＸ方向、Ｙ方向及びＺ方向の軸周りの回転方向（θ方向）に変位することができる。本実施形態では、マスク１０２の位置を固定し、基板１０１を変位してこれらの相対位置を調整するが、マスク１０２を変位させて調整してもよく、或いは、基板１０１とマスク１０２の双方を変位させてもよい。 The position adjustment unit 84 adjusts the relative position of the substrate 101 with respect to the mask 102 by displacing the substrate support plate 3 on the XY plane. In other words, the position adjustment unit 80 can also be said to be a unit that adjusts the horizontal positions of the mask 102 and the substrate 101. The position adjustment unit 80 can displace the substrate support plate 6 in a rotational direction (θ direction) around the X, Y, and Z axes. In this embodiment, the position of the mask 102 is fixed and the substrate 101 is displaced to adjust their relative positions, but the mask 102 may also be displaced to make the adjustment, or both the substrate 101 and the mask 102 may be displaced.
　位置調整ユニット８４は、固定プレート２０ａと、可動プレート２０ｂとを備える。固定プレート８４ａと、可動プレート８４ｂは矩形の枠状のプレートであり、固定プレート８４ａは真空チャンバ２の上壁部２０上に固定されている。固定プレート２０ａと、可動プレート２０ｂとの間には、固定プレート２０ａに対して可動プレート２０ｂをＸ方向、Ｙ方向、及び、Ｚ方向の軸周りの回転方向に変位させるアクチュエータが設けられている。 The position adjustment unit 84 includes a fixed plate 20a and a movable plate 20b. The fixed plate 84a and the movable plate 84b are rectangular frame-shaped plates, and the fixed plate 84a is fixed on the upper wall portion 20 of the vacuum chamber 2. An actuator is provided between the fixed plate 20a and the movable plate 20b to displace the movable plate 20b relative to the fixed plate 20a in rotational directions around the axes in the X direction, the Y direction, and the Z direction.
　可動プレート８４ｂ上には、フレーム状の架台８３が搭載されており、架台８３には距離調整ユニット８１が支持されている。可動プレート８４ｂが変位すると、架台８３及び距離調整ユニット８１が一体的に変位する。これにより基板１０１をＸ方向、Ｙ方向、及び、Ｚ方向の軸周りの回転方向に変位させることができる。上壁部２０には、支持軸８２、支持部材６ａ及び７ａが通過する開口部が形成されている。これらの開口部は不図示のシール部材（ベローズ等）によってシールされ、真空チャンバ２内の気密性が維持される。 A frame-shaped pedestal 83 is mounted on the movable plate 84b, and the distance adjustment unit 81 is supported on the pedestal 83. When the movable plate 84b is displaced, the pedestal 83 and the distance adjustment unit 81 are integrally displaced. This allows the substrate 101 to be displaced in the rotational directions around the axes in the X direction, Y direction, and Z direction. The upper wall portion 20 is formed with an opening through which the support shaft 82 and the support members 6a and 7a pass. These openings are sealed by a sealing member (not shown) (such as a bellows) to maintain airtightness within the vacuum chamber 2.
　計測ユニットＳＲは、基板１０１とマスク１０２の位置ずれを計測する。本実施形態の計測ユニットＳＲは画像を撮像する撮像装置（カメラ）である。計測ユニットＳＲは、上壁部２０に配置され、真空チャンバ２内の画像を撮像可能である。基板１０１とマスク１０２にはそれぞれアライメントマーク（不図示）が形成されている。計測ユニットＳＲは、基板１０１とマスク１０２の各アライメントマークを撮影する。各アライメントマークの位置により基板１０１とマスク１０２との位置ずれ量を演算し、位置調整ユニット８４によって位置ずれ量を解消するように基板１０１とマスク１０２との相対位置を調整する。 The measurement unit SR measures the positional deviation between the substrate 101 and the mask 102. The measurement unit SR of this embodiment is an imaging device (camera) that captures an image. The measurement unit SR is arranged on the upper wall portion 20 and is capable of capturing an image inside the vacuum chamber 2 . Alignment marks (not shown) are formed on the substrate 101 and the mask 102, respectively. The measurement unit SR photographs each alignment mark on the substrate 101 and the mask 102. The amount of positional deviation between the substrate 101 and the mask 102 is calculated based on the position of each alignment mark, and the relative position between the substrate 101 and the mask 102 is adjusted by the position adjustment unit 84 so as to eliminate the amount of positional deviation.
　制御装置９は、成膜装置１の全体を制御する。制御装置９は、処理部９０、記憶部９１、入出力インタフェース（Ｉ／Ｏ）９２及び通信部９３を備える。処理部９０は、ＣＰＵに代表されるプロセッサであり、記憶部９２に記憶されたプログラムを実行して成膜装置１を制御する。記憶部９１は、ＲＯＭ、ＲＡＭ、ＨＤＤ等の記憶デバイスであり、処理部９０が実行するプログラムの他、各種の制御情報を記憶する。Ｉ／Ｏ９２は、処理部９０と外部デバイスとの間の信号を送受信するインタフェースである。通信部９３は通信回線を介して上位装置又は他の制御装置等と通信を行う通信デバイスである。 The control device 9 controls the entire film forming apparatus 1. The control device 9 includes a processing section 90, a storage section 91, an input/output interface (I/O) 92, and a communication section 93. The processing unit 90 is a processor represented by a CPU, and controls the film forming apparatus 1 by executing a program stored in the storage unit 92 . The storage unit 91 is a storage device such as a ROM, RAM, or HDD, and stores various control information in addition to programs executed by the processing unit 90. The I/O 92 is an interface that transmits and receives signals between the processing unit 90 and external devices. The communication unit 93 is a communication device that communicates with a host device or other control device via a communication line.
　＜基板及びマスクの構成例＞
　図３は基板１０１、マスク１０２及び静電チャック１０３の例を示す。基板１０１は円形のシリコンウエハであり、成膜等の後、複数のチップ１０１ａが基板１０１から切り出される。マスク１０２は基板１０１と同様に円形の部材であり、各チップ１０１ａに対応したマスク部１０２ｂと、マスク部１０２ｂの周囲のフレーム部１０２ａとを含む。マスク部１０２ｂには、基板１０１に蒸着される蒸着物質が通過する複数の開口部（貫通孔）１０２ｃが形成されており、開口部１０２ｃの配置によって基板１０１上の成膜パターンが規定される。 <Example of structure of substrate and mask>
FIG. 3 shows an example of a substrate 101, a mask 102, and an electrostatic chuck 103. The substrate 101 is a circular silicon wafer, and after film formation and the like, a plurality of chips 101a are cut out from the substrate 101. The mask 102 is a circular member like the substrate 101, and includes a mask portion 102b corresponding to each chip 101a and a frame portion 102a surrounding the mask portion 102b. A plurality of openings (through holes) 102c are formed in the mask portion 102b, through which a vapor deposition material to be vapor-deposited on the substrate 101 passes, and a film formation pattern on the substrate 101 is defined by the arrangement of the openings 102c.
　図４Ａ～図４Ｃは、図３のＡ－Ａ線断面図、Ｂ－Ｂ線断面図及びＣ－Ｃ線断面図である。マスク１０２は、マスク本体１０２０と、マスク本体１０２０に形成された磁性体１０２１とを備える。マスク本体１０２０は例えばシリコン（Ｓｉ）等の非磁性材料からなる。マスク本体１０２０としてシリコンウエハを用いることで、半導体製造技術の応用によりより微細で精密な開口部１０２ｃを形成することができる。フレーム部１０２ａは相対的に厚肉の厚肉部であり、マスク部１０２ｂは相対的に薄肉の薄肉部である。フレーム部１０２ａはマスク部１０２ｂよりも剛性が高い。マスク１０２の全体の剛性を大きく低下させることなく、マスク部１０２ｂを薄く形成することができる。 4A to 4C are a sectional view taken along the line AA, BB, and CC in FIG. 3. The mask 102 includes a mask body 1020 and a magnetic body 1021 formed on the mask body 1020. The mask body 1020 is made of a non-magnetic material such as silicon (Si). By using a silicon wafer as the mask body 1020, finer and more precise openings 102c can be formed by applying semiconductor manufacturing technology. The frame portion 102a is a relatively thick portion, and the mask portion 102b is a relatively thin portion. The frame portion 102a has higher rigidity than the mask portion 102b. The mask portion 102b can be formed thin without significantly reducing the overall rigidity of the mask 102.
　マスク本体１０２の表面には、複数のスリット１０２ｄが形成されている。各スリット１０２ｄはマスク部１０２ｂ内に複数形成された、平面視で十字形状の有底溝である。スリット１０２ｄを形成したことによって、マスク本体１０２に応力が作用した場合に、スリット１０２での変形を許容してマスク本体１０２のひび割れ等の破損を防止できる。 A plurality of slits 102d are formed on the surface of the mask body 102. Each slit 102d is a bottomed groove formed in the mask portion 102b and having a cross shape in plan view. By forming the slit 102d, when stress is applied to the mask body 102, deformation in the slit 102 is allowed and damage such as cracking of the mask body 102 can be prevented.
　磁性体１０２１は、例えば、ニッケル（Ｎｉ）等の磁性材料の薄膜である。本実施形態では、上記の磁石プレート５の磁力によって成膜時にマスク１０２と基板１０１とを密着させる。本実施形態のようにマスク本体１０２０を非磁性体で構成した場合、そのままでは磁力による密着作用を得られない。磁性体１０２１をマスク本体１０２０に形成したことで、磁石プレート５の磁力が磁性体１０２１に作用し、磁力によるマスク１０２と基板１０１との密着作用を得られる。 The magnetic body 1021 is, for example, a thin film of a magnetic material such as nickel (Ni). In this embodiment, the magnetic force of the magnet plate 5 causes the mask 102 and the substrate 101 to adhere to each other during film formation. If the mask body 1020 is made of a non-magnetic material as in this embodiment, the magnetic force does not provide an adhesive effect. By forming the magnetic body 1021 on the mask body 1020, the magnetic force of the magnet plate 5 acts on the magnetic body 1021, and the magnetic force provides an adhesive effect between the mask 102 and the substrate 101.
　本実施形態の磁性体１０２１は、マスク本体１０２０の表面に形成されており、特に、基板１０１と重なる面に形成されている。磁力によるマスク１０２と基板１０１との密着作用を得られる。また、磁性体１０２１は個々の開口部１０２ｃを囲むように形成されており、特に本実施形態では全体として縦横の直線が互いに直交した格子状に形成されている。開口部１０２ｃの周囲において磁力による基板１０１との密着作用を向上でき、開口部１０２ｃを通って放出される蒸着物質を基板１０１の目的とする部位に的確に蒸着できる。 The magnetic material 1021 of this embodiment is formed on the surface of the mask body 1020, particularly on the surface that overlaps with the substrate 101. The close contact effect between the mask 102 and the substrate 101 due to magnetic force can be obtained. Further, the magnetic body 1021 is formed so as to surround each opening 102c, and particularly in this embodiment, the magnetic body 1021 is formed as a whole in a lattice shape in which vertical and horizontal lines are orthogonal to each other. The adhesion to the substrate 101 due to the magnetic force around the opening 102c can be improved, and the deposition material released through the opening 102c can be accurately deposited on a target portion of the substrate 101.
　＜制御例＞
　制御ユニット９の処理部９０が実行する成膜装置１の制御例について説明する。図５～図９は成膜装置１の動作説明図であり、基板１０１の搬入から、成膜し、搬出するまでの例を示す。 <Control example>
An example of control of the film forming apparatus 1 executed by the processing section 90 of the control unit 9 will be described. 5 to 9 are explanatory diagrams of the operation of the film forming apparatus 1, and show examples from carrying in the substrate 101 to forming a film and carrying it out.
　図５の状態ＳＴ５１は基板１０１を真空チャンバ２内に搬入した状態を示す。基板１０１は搬送ロボット１２１により基板支持プレート３の下方に搬送される。基板支持プレート３の下面の基板吸着面３ａは水平である。次にマスク支持ユニット６によって搬送ロボット１２１から基板支持プレート３へ基板１０１を移載する。図５の状態ＳＴ５２はその動作を示している。支持部材６ａを上昇することにより、基板１０１の周縁が爪部Ｆ１に載置され、基板１０１は搬送ロボット１２１から上昇し、かつ、基板支持プレート３の基板吸着面３ａに押し付けられる。基板支持プレート３の静電チャックを作動して基板１０１を吸着し、保持する。 A state ST51 in FIG. 5 shows a state in which the substrate 101 is carried into the vacuum chamber 2. The substrate 101 is transported below the substrate support plate 3 by the transport robot 121. The substrate suction surface 3a on the lower surface of the substrate support plate 3 is horizontal. Next, the mask support unit 6 transfers the substrate 101 from the transfer robot 121 to the substrate support plate 3 . State ST52 in FIG. 5 shows the operation. By lifting the support member 6a, the peripheral edge of the substrate 101 is placed on the claw portion F1, the substrate 101 is lifted from the transfer robot 121, and is pressed against the substrate suction surface 3a of the substrate support plate 3. The electrostatic chuck of the substrate support plate 3 is activated to attract and hold the substrate 101.
　続いてマスク１０２を真空チャンバ２内に搬入する。図６の状態ＳＴ６１はマスク１０２を真空チャンバ２内に搬入した状態を示す。マスク１０２は搬送ロボット１３１によって格納室１４０から真空チャンバ２内に搬入される。マスク１０２は基板１０１の真下に位置する。次にマスク１０２を搬送ロボット１３１からマスク支持ユニット６に移載し、アライメント位置に位置させる。図６の状態ＳＴ６２はその動作を示している。支持部材６ａを上昇することにより、マスク１０２の周縁が爪部Ｆ１に載置され、マスク１０２は搬送ロボット１３１から上昇する。マスク１０２は支持部材６ａに支持された状態となり、かつ、更に上昇することでアライメント位置に位置する。本実施形態ではマスク１０２を上昇してアライメント位置に位置させるが、基板１０１を降下して基板１０１をアライメント位置に位置させる構成でもよい。 Subsequently, the mask 102 is carried into the vacuum chamber 2. A state ST61 in FIG. 6 shows a state in which the mask 102 is carried into the vacuum chamber 2. The mask 102 is carried into the vacuum chamber 2 from the storage chamber 140 by the transfer robot 131. Mask 102 is located directly below substrate 101. Next, the mask 102 is transferred from the transfer robot 131 to the mask support unit 6 and positioned at an alignment position. State ST62 in FIG. 6 shows this operation. By lifting the support member 6a, the peripheral edge of the mask 102 is placed on the claw portion F1, and the mask 102 is lifted from the transfer robot 131. The mask 102 is in a state of being supported by the support member 6a, and is further raised to the alignment position. In this embodiment, the mask 102 is raised and positioned at the alignment position, but a configuration may also be adopted in which the substrate 101 is lowered and the substrate 101 is positioned at the alignment position.
　次にアライメント動作を行う。図７の状態ＳＴ７１に示すように計測ユニットＳＲにより、基板１０１のアライメントマークとマスク１０２のアライメントマークの相対位置が計測される。計測結果（基板１０１とマスク１０２の位置ずれ量）が許容範囲内であればアライメント動作を終了する。計測結果が許容範囲外であれば、計測結果に基づいて位置ずれ量を許容範囲内に収めるための制御量（基板１０１の変位量）が設定される。 Next, perform alignment operation. As shown in state ST71 in FIG. 7, the measurement unit SR measures the relative positions of the alignment marks on the substrate 101 and the alignment marks on the mask 102. If the measurement result (the amount of positional deviation between the substrate 101 and the mask 102) is within the allowable range, the alignment operation is finished. If the measurement result is outside the allowable range, a control amount (displacement amount of the substrate 101) is set based on the measurement result to keep the positional deviation amount within the allowable range.
　「位置ずれ量」とは、位置ずれの距離と方向（Ｘ、Ｙ、θ）で定義される。設定された制御量に基づいて、図７の状態ＳＴ７２に示すように位置調整ユニット８０が作動される。これにより、基板支持プレート３がＸ－Ｙ平面上で変位され、マスク１０２に対する基板１０１の相対位置が調整される。 The "positional deviation amount" is defined by the distance and direction (X, Y, θ) of positional deviation. Based on the set control amount, the position adjustment unit 80 is operated as shown in state ST72 in FIG. As a result, the substrate support plate 3 is displaced on the XY plane, and the relative position of the substrate 101 with respect to the mask 102 is adjusted.
　計測結果が許容範囲内であるか否かの判定は、例えば、アライメントマーク間の距離をそれぞれ算出し、その距離の平均値や二乗和を、予め設定された閾値と比較することで行うことができる。 Whether or not the measurement results are within the allowable range can be determined, for example, by calculating the distances between the alignment marks and comparing the average value or sum of squares of the distances with a preset threshold. can.
　相対位置の調整後、再度、計測ユニットＳＲにより、基板１０１のアライメントマークとマスク１０２のアライメントマークの相対位置が計測される。計測結果が許容範囲内であればアライメント動作を終了する。計測結果が許容範囲外であれば、マスク１０２に対する基板１０１の相対位置が再度調整される。以降、計測結果が許容範囲内となるまで、計測と相対位置調整が繰り返される。 After adjusting the relative positions, the measurement unit SR measures the relative positions of the alignment marks on the substrate 101 and the alignment marks on the mask 102 again. If the measurement result is within the allowable range, the alignment operation is finished. If the measurement result is outside the allowable range, the relative position of the substrate 101 with respect to the mask 102 is adjusted again. Thereafter, measurements and relative position adjustments are repeated until the measurement results fall within the allowable range.
　次に、成膜動作を行う。まず、基板１０１をマスク１０２と重ね合わせる。図８の状態ＳＴ８１はその動作を示している。基板支持プレート３を降下させると、基板１０１はマスク１０２上に載置され、基板１０１は基板１０１の被処理面の全体がマスク１０２と接触する。磁石プレート５が冷却プレート４上に当接し、上から順に磁石プレート５、冷却プレート４、基板支持プレート３、基板１０１及びマスク１０２が密着した状態になる。磁石プレート５の磁力によりマスク１０２を引き寄せ、マスク１０２と基板１０１とを全体的に密着させることができる。マスク１０２には磁性体１０２１（図３、図４Ｂ及び図４Ｃ）が形成されているため、より強い磁気吸着力を得られる。このように本実施形態によれば、非磁性体製のマスク１０２を用いつつ、基板１０１とマスク１０２の密着性を向上することができる。また、磁力の作用によりマスク本体１０２０に応力が生じても、スリット１０２ｄで変形が許容され、マスク１０２０のひび割れ等の破損を防止できる。 Next, a film forming operation is performed. First, the substrate 101 and the mask 102 are overlapped. State ST81 in FIG. 8 shows the operation. When the substrate support plate 3 is lowered, the substrate 101 is placed on the mask 102 , and the entire surface of the substrate 101 to be processed comes into contact with the mask 102 . The magnet plate 5 comes into contact with the cooling plate 4, and the magnet plate 5, the cooling plate 4, the substrate support plate 3, the substrate 101, and the mask 102 are in close contact with each other in order from the top. The mask 102 is attracted by the magnetic force of the magnet plate 5, and the mask 102 and the substrate 101 can be brought into close contact with each other as a whole. Since the magnetic material 1021 (FIGS. 3, 4B, and 4C) is formed on the mask 102, stronger magnetic attraction force can be obtained. As described above, according to this embodiment, the adhesion between the substrate 101 and the mask 102 can be improved while using the mask 102 made of a non-magnetic material. Furthermore, even if stress is generated in the mask body 1020 due to the action of magnetic force, deformation is allowed by the slit 102d, and damage such as cracking of the mask 1020 can be prevented.
　以上により成膜の準備が整い、次に図８の状態ＳＴ８２に示すように、シャッタ１０ａを開状態とし、蒸着ユニット１０から蒸着物質を放出する。蒸着物質はマスク１０２を介して基板１０１に蒸着される。 With the above steps, preparations for film formation are completed, and then, as shown in state ST82 in FIG. 8, the shutter 10a is opened, and the vapor deposition substance is released from the vapor deposition unit 10. A deposition material is deposited on the substrate 101 through the mask 102 .
　こうした成膜が完了すると、マスク１０２及び基板１０１をそれぞれ搬出する動作を行う。図９の状態ＳＴ９１はマスク１０２を搬出する動作を示している。まず、磁石プレート５を上昇し、基板１０１とマスク１０２とが離間される。搬送ロボット１３１のハンド部をマスク１０２の下方に進入させた後、マスク支持ユニット６の支持部材６ａを降下して、マスク１０２を支持部材６ａから搬送ロボット１３１へ移載する。搬送ロボット１３１はマスク１０２を格納室１４０へ搬送する。 When such film formation is completed, the mask 102 and the substrate 101 are each carried out. State ST91 in FIG. 9 shows the operation of carrying out the mask 102. First, the magnet plate 5 is lifted, and the substrate 101 and the mask 102 are separated. After the hand portion of the transfer robot 131 enters below the mask 102, the support member 6a of the mask support unit 6 is lowered, and the mask 102 is transferred from the support member 6a to the transfer robot 131. The transport robot 131 transports the mask 102 to the storage chamber 140.
　続いて成膜済みの基板１０１を搬出する。マスク支持ユニット６の支持部材６ａを上昇して、基板１０１を爪部Ｆ１によって下側から支持する。基板１０１に対する基板支持ユニット３の吸着を解除して基板１０１が支持部材６ａに移載される。搬送ロボット１２１のハンド部を基板１０１の下方に進入させた後、図９の状態ＳＴ９２に示すようにマスク支持ユニット６の支持部材６ａを降下して、基板１０１を支持部材６ａから搬送ロボット１２１へ移載する。搬送ロボット１２１は基板１０１を搬送路１１１へ搬送する。以上により基板１０１の搬入から、成膜し、搬出するまでの動作が完了する。 Subsequently, the substrate 101 on which the film has been formed is carried out. The support member 6a of the mask support unit 6 is raised to support the substrate 101 from below by the claws F1. The adsorption of the substrate support unit 3 to the substrate 101 is released, and the substrate 101 is transferred to the support member 6a. After the hand portion of the transfer robot 121 enters below the substrate 101, the support member 6a of the mask support unit 6 is lowered as shown in state ST92 in FIG. 9, and the substrate 101 is transferred from the support member 6a to the transfer robot 121. Transfer. The transport robot 121 transports the substrate 101 to the transport path 111. As described above, the operations from carrying in the substrate 101 to forming a film and carrying it out are completed.
　＜第二実施形態＞
　基板１０１にも磁性体を形成してもよい。図１０Ａ及び図１０Ｂはその一例を示す。これらの図は図４Ｂの断面図に相当し、かつ、マスク１０２に対してアライメントされた基板１０１の断面図も示した図である。 <Second embodiment>
A magnetic material may also be formed on the substrate 101. FIGS. 10A and 10B show an example. These figures correspond to the cross-sectional view of FIG. 4B, and also show a cross-sectional view of the substrate 101 aligned with the mask 102.
　図１０Ａに示すように基板１０１には、蒸着対象部位である一画素領域１０１ｂの周囲に磁性体１０１ｄが形成されている。図示の例では磁性体１０１ｄは一画素領域１０１ｂの周囲のバンク１０１ｃの表面に形成されている。磁性体１０１ｄは、例えば、ニッケル（Ｎｉ）等の磁性材料の薄膜である。磁性体１０１ｄと磁性体１０２１とは、基板１０１とマスク１０２とが適切にアライメントされたときに互いに重なる部位に配置されている。 As shown in FIG. 10A, a magnetic material 101d is formed on the substrate 101 around one pixel region 101b, which is a region to be vapor-deposited. In the illustrated example, the magnetic material 101d is formed on the surface of the bank 101c around one pixel region 101b. The magnetic body 101d is, for example, a thin film of a magnetic material such as nickel (Ni). The magnetic material 101d and the magnetic material 1021 are arranged at positions where they overlap each other when the substrate 101 and the mask 102 are properly aligned.
　図１０Ｂは基板１０１とマスク１０２とのアライメント後、基板１０１をマスク１０２と重ね合わせた状態を示している。磁石プレート５の磁力によって、磁性体１０１ｄと磁性体１０２１とが互いに引き合い、基板１０１とマスク１０２との密着性を向上する。更に、磁性体１０１ｄと磁性体１０２１とが互いに引き合うことで、開口部１０２ｃと一画素領域１０１ｂとの相対位置がセルフアライメントされ、蒸着対象部位である一画素領域１０１ｂに、開口部１０２ｃを介してより的確に蒸着物質を蒸着できる。 FIG. 10B shows a state in which the substrate 101 and the mask 102 are overlapped with each other after the substrate 101 and the mask 102 are aligned. The magnetic force of the magnet plate 5 attracts the magnetic body 101d and the magnetic body 1021 to each other, improving the adhesion between the substrate 101 and the mask 102. Furthermore, as the magnetic material 101d and the magnetic material 1021 are attracted to each other, the relative position between the opening 102c and the one pixel region 101b is self-aligned, and the one pixel region 101b, which is the vapor deposition target region, is exposed to the one pixel region 101b through the opening 102c. The deposition substance can be deposited more accurately.
　＜第三実施形態＞
　基板１０１に磁石を形成してもよい。図１１Ａ及び図１１Ｂはその一例を示す。これらの図は図４Ｂの断面図に相当し、かつ、マスク１０２に対してアライメントされた基板１０１の断面図も示した図である。 <Third embodiment>
A magnet may be formed on the substrate 101. FIGS. 11A and 11B show an example. These figures correspond to the cross-sectional view of FIG. 4B, and also show a cross-sectional view of the substrate 101 aligned with the mask 102.
　図１１Ａに示すように基板１０１には、蒸着対象部位である一画素領域１０１ｂの周囲に磁石１０１ｅが形成されている。図示の例では磁石１０１ｅは一画素領域１０１ｂの周囲のバンク１０１ｃの表面に形成されている。磁石１０１ｅは、例えば、ニッケル、コバルト等の磁石材料の薄膜である。磁石１０１ｅと磁性体１０２１とは、基板１０１とマスク１０２とが適切にアライメントされたときに互いに重なる部位に配置されている。 As shown in FIG. 11A, a magnet 101e is formed on the substrate 101 around one pixel region 101b, which is a region to be vapor-deposited. In the illustrated example, the magnet 101e is formed on the surface of the bank 101c around one pixel region 101b. The magnet 101e is, for example, a thin film of a magnetic material such as nickel or cobalt. The magnet 101e and the magnetic body 1021 are arranged at a portion where the substrate 101 and the mask 102 overlap each other when properly aligned.
　図１１Ｂは基板１０１とマスク１０２とのアライメント後、基板１０１をマスク１０２と重ね合わせた状態を示している。磁石プレート５の磁力による引き寄せに加えて、磁石１０１ｅと磁性体１０２１とが互いに引き合い、基板１０１とマスク１０２との密着性を向上する。更に、磁石１０１ｅ１０１ｄと磁性体１０２１とが互いに引き合うことで、開口部１０２ｃと一画素領域１０１ｂとの相対位置がセルフアライメントされ、蒸着対象部位である一画素領域１０１ｂに、開口部１０２ｃを介してより的確に蒸着物質を蒸着できる。 FIG. 11B shows a state in which the substrate 101 and the mask 102 are overlapped with each other after the substrate 101 and the mask 102 are aligned. In addition to the attraction by the magnetic force of the magnet plate 5, the magnet 101e and the magnetic body 1021 attract each other, improving the adhesion between the substrate 101 and the mask 102. Furthermore, as the magnet 101e101d and the magnetic body 1021 attract each other, the relative position between the opening 102c and the one pixel area 101b is self-aligned, and the one pixel area 101b, which is the evaporation target site, is exposed to the one pixel area 101b through the opening 102c. Vapor deposition substances can be deposited accurately.
　本実施形態の場合、磁石プレート５を省略し、磁石１０１ｅと磁性体１０２１の磁力によって基板１０１とマスク１０２とを密着させることも可能である。 In the case of this embodiment, it is also possible to omit the magnet plate 5 and bring the substrate 101 and mask 102 into close contact with each other by the magnetic force of the magnet 101e and the magnetic body 1021.
　＜第四実施形態＞
　磁性体１０２１に関するマスク１０２の他の構成例について図１２Ａ～図１２Ｃを参照して説明する。これらの各図は図４Ｂの断面図に相当する。 <Fourth embodiment>
Other configuration examples of the mask 102 regarding the magnetic material 1021 will be described with reference to FIGS. 12A to 12C. Each of these figures corresponds to the cross-sectional view of FIG. 4B.
　図１２Ａは、磁性体１０２１とマスク本体１０２０との間にスペーサ１０２２を介在させた構成例を示す。スペーサ１０２２のＺ方向の厚さによって、開口部１０２ｃの端部と基板１０１とのＺ方向の距離を所望の距離に設計することができる。また、スペーサ１０２２として弾性を有する材料を用いた場合には、基板１０１とマスク１０２とを密着させる際の衝撃緩和を図ることができる。 FIG. 12A shows a configuration example in which a spacer 1022 is interposed between the magnetic body 1021 and the mask body 1020. Depending on the thickness of the spacer 1022 in the Z direction, the distance in the Z direction between the end of the opening 102c and the substrate 101 can be designed to a desired distance. Further, when an elastic material is used as the spacer 1022, it is possible to reduce the impact when the substrate 101 and the mask 102 are brought into close contact with each other.
　図１２Ｂは、磁性体１０２１に代わる磁性体１０２１Ａが、マスク本体１０２０の表面に加えて、開口部１０２ｃの内周面に形成された部分１０２１ａを含む。開口部１０２ｃの内周面にも磁性体を形成したことで、磁石プレート５の磁力による基板１０１とマスク１０２との密着作用を更に向上できる。 In FIG. 12B, magnetic material 1021A, which replaces magnetic material 1021, includes a portion 1021a formed on the inner circumferential surface of opening 102c in addition to the surface of mask body 1020. By forming a magnetic material on the inner circumferential surface of opening 102c, the adhesive effect between substrate 101 and mask 102 due to the magnetic force of magnet plate 5 can be further improved.
　図１２Ｃは、磁性体１０２１に代わる磁性体１０２１Ｂが、図１１Ｂの例と同様に、マスク本体１０２０の表面に加えて、開口部１０２ｃの内周面に形成された部分１０２１ｂを含む。但し、磁性体１０２１Ｂはマスク本体１０２０の表面のうち、基板１０１と反対側の面（重ならない面）に形成されている。磁石プレート５の磁力による基板１０１とマスク１０２との密着作用を更に向上できる他、基板１０１とマスク１０２との密着時に、磁性体１０２１Ｂが基板１０１とマスク１０２との間に介在しないので、基板１０１とマスク１０２との平行度を向上できる場合がある。 In FIG. 12C, a magnetic body 1021B replacing the magnetic body 1021 includes a portion 1021b formed on the inner peripheral surface of the opening 102c in addition to the surface of the mask body 1020, as in the example of FIG. 11B. However, the magnetic material 1021B is formed on the surface of the mask body 1020 that is opposite to the substrate 101 (the surface that does not overlap). In addition to further improving the adhesion between the substrate 101 and the mask 102 due to the magnetic force of the magnet plate 5, the magnetic material 1021B is not interposed between the substrate 101 and the mask 102 when the substrate 101 and the mask 102 are in close contact with each other. In some cases, the parallelism between the mask 102 and the mask 102 can be improved.
　＜他の実施形態＞
　本発明は、上述の実施形態の１以上の機能を実現するプログラムを、ネットワーク又は記憶媒体を介してシステム又は装置に供給し、そのシステム又は装置のコンピュータにおける１つ以上のプロセッサがプログラムを読出し実行する処理でも実現可能である。また、１以上の機能を実現する回路（例えば、ＡＳＩＣ）によっても実現可能である。 <Other embodiments>
The present invention provides a system or device with a program that implements one or more functions of the embodiments described above via a network or a storage medium, and one or more processors in a computer of the system or device reads and executes the program. This can also be achieved by processing. It can also be realized by a circuit (for example, ASIC) that realizes one or more functions.
　発明は上記実施形態に制限されるものではなく、発明の精神及び範囲から離脱することなく、様々な変更及び変形が可能である。従って、発明の範囲を公にするために請求項を添付する。 The invention is not limited to the above embodiments, and various changes and modifications can be made without departing from the spirit and scope of the invention. Therefore, the following claims are hereby appended to disclose the scope of the invention.
１　成膜装置、５　磁石プレート、８　アライメントユニット、１０　蒸着ユニット、１０１　基板、１０２　マスク、１０２１　磁性体 1 Film forming device, 5 Magnet plate, 8 Alignment unit, 10 Vapor deposition unit, 101 Substrate, 102 Mask, 1021 Magnetic material

Claims (13)

  1. 　基板上に蒸着物質のパターンを成膜するための開口部を有するマスクであって、
    　前記開口部を有し、非磁性体のマスク本体と、
    　前記マスク本体に形成された磁性体と、を備える、
    ことを特徴とするマスク。     A mask having an opening for forming a pattern of vapor deposition material on a substrate, the mask comprising:
    a mask body made of a non-magnetic material and having the opening;
    a magnetic body formed on the mask body;
    A mask characterized by:
  2. 　請求項１に記載のマスクであって、
    　前記磁性体は、前記マスク本体の表面に形成された部分を含む、
    ことを特徴とするマスク。     The mask according to claim 1,
    The magnetic material includes a portion formed on the surface of the mask body.
    A mask characterized by:
  3. 　請求項１に記載のマスクであって、
    　前記磁性体は、前記マスク本体の表面において前記開口部の周囲に形成された部分を含む、
    ことを特徴とするマスク。     The mask according to claim 1,
    The magnetic material includes a portion formed around the opening on the surface of the mask body.
    A mask characterized by:
  4. 　請求項１に記載のマスクであって、
    　前記磁性体は、前記開口部の内周面に形成された部分を含む、
    ことを特徴とするマスク。     The mask according to claim 1,
    The magnetic body includes a portion formed on an inner circumferential surface of the opening.
    A mask characterized by:
  5. 　請求項１に記載のマスクであって、
    　前記マスク本体には、複数のスリットが形成されている、
    ことを特徴とするマスク。     The mask according to claim 1,
    A plurality of slits are formed in the mask body,
    A mask characterized by:
  6. 　請求項１に記載のマスクであって、
    　前記磁性体は、格子状に形成されている、
    ことを特徴とするマスク。     The mask according to claim 1,
    The magnetic body is formed in a lattice shape,
    A mask characterized by:
  7. 　基板と、前記基板上に蒸着物質のパターンを成膜するための開口部を有するマスクと、のアライメントを行うアライメント工程と、
    　前記アライメント工程によりアライメントされた前記基板と前記マスクとを密着させる密着工程と、
    　前記マスクを介して前記基板に対して蒸着物質を放出する蒸着工程と、
    を備えた成膜方法であって、
    　前記マスクは、
    　前記開口部を有し、非磁性体のマスク本体と、
    　前記マスク本体に形成された磁性体と、を備え、
    　前記密着工程では、
    　前記磁性体に対する磁力の作用によって前記基板と前記マスクとを密着させる、
    ことを特徴とする成膜方法。     an alignment step of aligning a substrate with a mask having openings for depositing a pattern of a deposition material on the substrate;
    a contact step of contacting the substrate aligned in the alignment step with the mask;
    a deposition step of ejecting a deposition material onto the substrate through the mask;
    A film forming method comprising:
    The mask comprises:
    a mask body made of a non-magnetic material and having the opening;
    A magnetic body formed on the mask body,
    In the adhesion step,
    the substrate and the mask are brought into close contact with each other by the action of a magnetic force on the magnetic body;
    A film forming method comprising:
  8. 　請求項７に記載の成膜方法であって、
    　前記密着工程では、
    　磁石プレートと、前記マスクとの間に前記基板を配置する、
    ことを特徴とする成膜方法。     The film forming method according to claim 7,
    In the adhesion step,
    arranging the substrate between a magnet plate and the mask;
    A film forming method characterized by the following.
  9. 　請求項８に記載の成膜方法であって、
    　前記基板の前記マスクの側の面には、前記マスク本体に形成された前記磁性体と重なる部位に磁性体が形成されている、
    ことを特徴とする成膜方法。     9. The film forming method according to claim 8,
    A magnetic material is formed on a surface of the substrate on the mask side at a portion overlapping with the magnetic material formed on the mask main body.
    A film forming method characterized by the following.
  10. 　請求項９に記載の成膜方法であって、
    　前記マスクの前記磁性体は、前記マスク本体の表面において前記開口部の周囲に形成された部分を含み、
    　前記基板の前記磁性体は、前記基板に蒸着物質を蒸着する部位の周囲に形成されている、
    ことを特徴とする成膜方法。     The film forming method according to claim 9,
    The magnetic body of the mask includes a portion formed around the opening on the surface of the mask body,
    The magnetic body of the substrate is formed around a region where a vapor deposition substance is deposited on the substrate.
    A film forming method characterized by the following.
  11. 　請求項７に記載の成膜方法であって、
    　前記基板の前記マスクの側の面には、前記マスク本体に形成された前記磁性体と重なる部位に磁石が形成されている、
    ことを特徴とする成膜方法。     The film forming method according to claim 7,
    A magnet is formed on a surface of the substrate on the mask side at a portion overlapping with the magnetic material formed on the mask body.
    A film forming method characterized by the following.
  12. 　請求項１１に記載の成膜方法であって、
    　前記磁性体は、前記マスク本体の表面において前記開口部の周囲に形成された部分を含み、
    　前記基板の前記磁石は、前記基板に蒸着物質を蒸着する部位の周囲に形成されている、
    ことを特徴とする成膜方法。     The film forming method according to claim 11,
    The magnetic material includes a portion formed around the opening on the surface of the mask body,
    The magnet of the substrate is formed around a portion of the substrate where a deposition substance is deposited,
    A film forming method characterized by the following.
  13. 　基板とマスクとのアライメントを行うアライメント手段と、
    　アライメントされた前記基板と前記マスクとを磁力により密着させる磁石プレートと、
    　前記マスクを介して前記基板に蒸着物質を放出する蒸着手段と、
    を備えた成膜装置であって、
    　前記マスクは、
    　前記基板上に蒸着物質のパターンを成膜するための開口部を有し、非磁性体のマスク本体と、
    　前記マスク本体に形成された磁性体と、を備え、
    　前記磁石プレートと前記マスクとの間に前記基板が配置される、
    ことを特徴とする成膜装置。     an alignment means for aligning the substrate and the mask;
    a magnet plate that brings the aligned substrate and the mask into close contact with each other by magnetic force;
    Vapor deposition means for releasing a vapor deposition substance onto the substrate through the mask;
    A film forming apparatus comprising:
    The mask is
    a mask body made of a non-magnetic material and having an opening for forming a pattern of vapor deposition material on the substrate;
    A magnetic body formed on the mask body,
    the substrate is disposed between the magnet plate and the mask;
    A film forming apparatus characterized by the following.
PCT/JP2023/029421 2022-09-20 2023-08-14 Mask, film forming method, and film forming apparatus WO2024062802A1 (en)

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JP2006188731A (en) * 2005-01-06 2006-07-20 Seiko Epson Corp Film deposition method for mask, and mask
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