WO2016199759A1 - Dispositif de maintien de substrat, appareil de formation de film et procédé de maintien de substrat - Google Patents

Dispositif de maintien de substrat, appareil de formation de film et procédé de maintien de substrat Download PDF

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Publication number
WO2016199759A1
WO2016199759A1 PCT/JP2016/066899 JP2016066899W WO2016199759A1 WO 2016199759 A1 WO2016199759 A1 WO 2016199759A1 JP 2016066899 W JP2016066899 W JP 2016066899W WO 2016199759 A1 WO2016199759 A1 WO 2016199759A1
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WO
WIPO (PCT)
Prior art keywords
plate
substrate
intermediate plate
holding
mask
Prior art date
Application number
PCT/JP2016/066899
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English (en)
Japanese (ja)
Inventor
あゆみ 織部
宗源 萩原
博文 梅村
憲昭 糟谷
潤一郎 小池
和彦 小泉
英二 藤野
Original Assignee
株式会社アルバック
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 株式会社アルバック filed Critical 株式会社アルバック
Priority to JP2017523645A priority Critical patent/JP6500103B2/ja
Priority to CN201680034320.6A priority patent/CN107710397B/zh
Priority to SG11201710300SA priority patent/SG11201710300SA/en
Priority to KR1020177028877A priority patent/KR102091560B1/ko
Publication of WO2016199759A1 publication Critical patent/WO2016199759A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/757—Means for aligning
    • H01L2224/75733—Magnetic holding means

Definitions

  • the present invention relates to a substrate holding apparatus for holding a film forming mask and a substrate using a magnet, a film forming apparatus provided with the substrate, and a substrate holding method.
  • Patent Document 1 discloses an in-line film deposition method in which a vapor deposition material generated in a deposition source is deposited on a deposition surface while a substrate having a plate-like mask disposed on the deposition surface is transported in a deposition chamber. An apparatus is described.
  • Patent Document 2 describes that a mask pressing mechanism for pressing the mask against the substrate is provided on the evaporation source side of the mask so that the mask is brought into close contact with the substrate.
  • an object of the present invention is to provide a substrate holding apparatus, a film forming apparatus, and a substrate that can ensure adhesion between the mask and the substrate without installing a mechanism portion on the evaporation source side of the mask. It is to provide a holding method.
  • a substrate holding apparatus includes a mask plate, an intermediate plate, a holding plate, and a pressing mechanism.
  • the mask plate is made of a magnetic material.
  • the intermediate plate has a first surface facing the mask plate and a second surface opposite to the first surface, and the first surface is disposed on the mask plate. It is configured to be able to contact the substrate.
  • the holding plate supports the intermediate plate so as to be relatively movable in an axial direction orthogonal to the mask plate.
  • the holding plate includes a magnet configured to magnetically attract the mask plate through the intermediate plate and the substrate.
  • the pressing mechanism is disposed to face the second surface. The pressing mechanism is configured to be able to press at least a part of the second surface along the axial direction.
  • the intermediate plate has a function of maintaining the planar state of the substrate by contacting the non-deposition surface of the substrate facing the mask plate.
  • the larger the intermediate plate or the smaller the thickness of the intermediate plate the lower the flatness of the intermediate plate itself due to insufficient strength of the intermediate plate or deformation due to heat input during film formation. Therefore, the substrate holding device includes a pressing mechanism that presses at least a part of the intermediate plate toward the mask plate. As a result, the flatness of the intermediate plate is increased. As a result, the flatness of the substrate in contact with the intermediate plate is also maintained, and good adhesion to the mask plate is ensured.
  • the intermediate plate can be thinned, it is possible to ensure a stable adhesion between the mask plate and the substrate regardless of the substrate size.
  • the pressing mechanism is disposed to face the second surface of the intermediate plate, so that the mask plate and the substrate are in close contact with each other without installing any mechanism portion on the evaporation source side of the mask plate. Can be achieved. For this reason, the adhesion effect between the mask plate and the substrate can be stably maintained without depending on the aperture ratio of the mask plate or the arrangement form of the mask openings.
  • the above axial direction is typically an axial direction parallel to the direction of gravity.
  • the pressing mechanism can prevent a decrease in flatness due to the bending deformation of the substrate or the intermediate plate, so that it is possible to stably obtain a desired film forming accuracy.
  • the pressing mechanism is typically installed on the holding plate. By installing the pressing mechanism on the holding plate, it is possible to simplify the apparatus configuration and stably press the desired position of the intermediate plate.
  • the pressing mechanism may include a plurality of pressing units configured to be able to press a plurality of locations on the second surface.
  • the pressing position of the intermediate plate is not particularly limited, and typically includes a central portion and / or a peripheral portion of the intermediate plate (second surface).
  • the intermediate plate may be configured to be movable along the axial direction between a contact position and a holding position.
  • the contact position is a position where at least a part of the first surface is in contact with the substrate, and a relative distance to the holding plate is a first distance, and the holding position is a relative distance to the holding plate.
  • the position is a second distance that is smaller than the first distance.
  • the pressing mechanism presses the second surface along the axial direction while the intermediate plate moves from the contact position to the holding position.
  • the second surface is pressed by the pressing mechanism while the magnet approaches the second surface of the intermediate plate in a state where the first surface of the intermediate plate is in contact with the substrate. Therefore, the substrate can be brought into close contact with the mask plate with high flatness without causing a positional shift of the substrate with respect to the mask plate.
  • the pressing unit includes, for example, a pressing element and an elastic member.
  • the pressing element is disposed to face the second surface.
  • the elastic member is disposed between the pressing element and the second surface, and is configured to be elastically deformable in the axial direction. This makes it possible to stably apply a desired pressing force to a plurality of positions on the intermediate plate, so that the intermediate plate and the substrate can be maintained at a target flatness.
  • the constituent material of the intermediate plate is not particularly limited, and may be a magnetic material or a non-magnetic material.
  • the intermediate plate is made of a magnetic material, a magnetic path through which the magnetic field from the magnet passes is formed, so that the magnetic attractive force on the mask plate can be increased.
  • the intermediate plate is made of a nonmagnetic material, when releasing the holding of the substrate by the magnet after film formation, the holding plate can be separated from the mask plate while the intermediate plate is in contact with the substrate.
  • a film formation apparatus includes a film formation chamber, a film formation source, a mask plate, an intermediate plate, a holding plate, and a pressing mechanism.
  • the film formation source is disposed in the film formation chamber.
  • the mask plate is disposed to face the film forming source and is made of a magnetic material.
  • the intermediate plate has a first surface facing the mask plate and a second surface opposite to the first surface, and the first surface is disposed on the mask plate. It is configured to be able to contact the substrate.
  • the holding plate supports the intermediate plate so as to be relatively movable in an axial direction perpendicular to the mask plate.
  • the holding plate includes a magnet configured to magnetically attract the mask plate through the intermediate plate and the substrate.
  • the pressing mechanism is disposed to face the second surface. The pressing mechanism is configured to be able to press at least a part of the second surface along the axial direction.
  • a substrate holding method includes disposing a substrate on a mask plate made of a magnetic material. An intermediate plate is brought into contact with the substrate. At least a part of the intermediate plate is pressed toward the mask plate by the pressing mechanism. By disposing a holding plate having a magnet for magnetically attracting the mask plate on the intermediate plate, the intermediate plate, the substrate and the mask plate are integrally held.
  • the adhesion between the mask and the substrate can be ensured.
  • FIG. 1 It is a schematic sectional drawing which shows the film-forming apparatus which concerns on one Embodiment of this invention. It is a schematic enlarged view of the substrate holding apparatus in the said film-forming apparatus, and has shown the state before board
  • substrate holding apparatus it is a side view which shows roughly the positional relationship with a mask plate, a board
  • substrate holding apparatus It is a schematic sectional side view which shows the example of 1 structure of the press mechanism in the said board
  • FIG. 1 is a schematic sectional view showing a film forming apparatus 100 according to an embodiment of the present invention.
  • the X, Y, and Z axes indicate three axial directions orthogonal to each other, the X and Y axes indicate the horizontal direction, and the Z axis indicates the height direction (the same applies to the following drawings). ).
  • the film forming apparatus 100 is configured as a vacuum vapor deposition apparatus, and includes a film forming chamber 10, an evaporation source 20 (film forming source), and a substrate holding device 30.
  • the film forming chamber 10 is composed of a vacuum chamber. That is, a vacuum pump (not shown) is connected to the film forming chamber 10 so that the inside of the film forming chamber 10 can be evacuated and maintained in a predetermined reduced pressure atmosphere.
  • a vacuum pump (not shown) is connected to the film forming chamber 10 so that the inside of the film forming chamber 10 can be evacuated and maintained in a predetermined reduced pressure atmosphere.
  • the film forming apparatus 100 includes, for example, a cluster-type vacuum film forming apparatus in which a plurality of processing chambers including the film forming chamber 10 are arranged through a gate valve with a transfer chamber as a center.
  • the substrate W is transferred from the transfer chamber to the film forming chamber 10 or from the film forming chamber 10 to the transfer chamber via a substrate transfer robot (not shown) installed in the transfer chamber. Is done.
  • the evaporation source 20 is for generating vapor of an evaporation material (or evaporation material), and various types of evaporation sources such as a resistance heating type, an induction heating type, and an electron beam heating type are applicable.
  • a metal material, a metal compound material such as metal oxide or metal sulfide, a synthetic resin material, an organic EL material, or the like is used as the vapor deposition material.
  • the evaporation source 20 may include a shutter capable of preventing the vapor of the vapor deposition material from reaching the substrate W held by the substrate holding device 30. Further, the evaporation source 20 may be fixed to the bottom of the film forming chamber 10 or may be configured to be movable relative to the bottom of the film forming chamber 10 and the substrate holding device 30 in the horizontal direction.
  • the substrate holding device 30 is arranged at a position immediately above the evaporation source 20 and is configured to be able to hold the substrate W to be deposited at a position facing the evaporation source 20.
  • the substrate holding device 30 includes a mask member 31, an intermediate plate 32, a holding plate 33, and a pressing mechanism 34.
  • FIG. 2 and 3 are schematic enlarged views of the substrate holding device 30.
  • FIG. 2 shows a state before the substrate W is held
  • FIG. 3 shows a state where the substrate W is held.
  • the mask member 31 is disposed to face the evaporation source 20.
  • the mask member 31 is fixed inside the film forming chamber 10 via a fixing unit (not shown).
  • the mask member 31 includes a mask plate 311 that faces the film formation surface of the substrate W, and a frame portion 312 that supports the periphery of the mask plate 311.
  • the mask plate 311 is a thin plate made of a magnetic material having a predetermined opening pattern.
  • the constituent material of the mask plate 311 is not particularly limited, and typically, a ferromagnetic material having high permeability characteristics (soft magnetic characteristics) such as Fe, Co, Ni, or an alloy thereof is used. Further, in order to suppress thermal deformation of the mask plate 311 due to heat input during film formation from the film formation source (evaporation source 20), an alloy such as Invar having a small thermal expansion coefficient is used as a constituent material of the mask plate 311. May be.
  • the mask plate 311 is formed in a size that can cover the film formation surface of the substrate W.
  • the size of the substrate W is not particularly limited, and in this embodiment, a fourth to fifth generation (G4 to G5) rectangular glass substrate (for example, 680 mm to 1200 mm in length and 730 mm to 1300 mm in width) is used.
  • the frame unit 312 is fixed to the fixed unit, and holds the mask plate 311 in a horizontal posture.
  • the frame portion 312 may be made of a magnetic material similarly to the mask plate 311, but is not limited thereto, and may be made of a nonmagnetic material.
  • the intermediate plate 32 is disposed above the mask member 31 and is formed of a rectangular plate material having a predetermined thickness larger than that of the substrate W.
  • the intermediate plate 32 is made of a nonmagnetic material such as austenitic stainless steel, aluminum, or copper.
  • the intermediate plate 32 has a lower surface 32a (first surface) facing the mask plate 311 and an upper surface 32b (second surface) on the opposite side.
  • the lower surface 32a of the intermediate plate 32 is configured to be able to come into contact with the back surface (non-deposition surface) of the substrate W facing the mask plate 311 when the substrate is held (FIG. 3).
  • a cooling water circulation channel may be formed inside the intermediate plate 32. Thereby, an excessive temperature rise of the substrate W during film formation can be suppressed, and the substrate W can be cooled to a predetermined temperature or lower.
  • the holding plate 33 is disposed above the intermediate plate 32 and supports the intermediate plate 32 so as to be relatively movable in an axial direction (Z-axis direction) orthogonal to the mask plate 31.
  • the holding plate 33 includes a magnet 331 configured to magnetically attract the mask plate 311 via the intermediate plate 32 and the substrate W.
  • the magnet 331 is configured by a plate-like permanent magnet that is disposed on the lower surface of the holding plate 33 and is larger than the substrate W.
  • the holding plate 33 is configured to be movable relative to the mask member 31 in the Z-axis direction via a lifting mechanism (not shown). In the state before holding the substrate W, the holding plate 33 takes a position (upward position) separated from the mask plate 311 as shown in FIG. 2, and when holding the substrate W, as shown in FIG. A position close to the mask plate 311 (downward position) is taken. As will be described later, the intermediate plate 32 is configured such that the lower surface 32a is separated from the mask plate 311 by a predetermined distance in the raised position, and the lower surface 32a is in contact with the mask plate 311 (or the substrate W) in the lowered position. .
  • the pressing mechanism 34 includes a plurality of pressing units 35 configured to be able to press at least a part of the upper surface 32b of the intermediate plate 32 along the Z-axis direction. As will be described later, the plurality of pressing units 35 are respectively installed on the holding plate 33 so as to face the upper surface 32b of the intermediate plate 32.
  • the pressing mechanism 34 is for preventing a gap from being generated between the substrate W and the intermediate plate 32 due to bending or deformation of the intermediate plate 32, and when the holding plate 33 reaches the lowered position, the non-loading of the substrate W is not performed. It has a function of correcting the shape of the intermediate plate 32 to be flat by pressing the upper surface of the intermediate plate 32 in contact with the vapor deposition surface with a predetermined pressure.
  • FIG. 4 is a side view schematically showing the positional relationship between the mask plate 311, the substrate W, the intermediate plate 32, and the magnet 331 (holding plate 33).
  • the holding plate 33 moves to the lowered position so that the intermediate plate 32 comes into contact with the non-deposition surface of the substrate W, and the mask plate 311 is magnetically attracted by the magnet 331, thereby The substrate W is sandwiched between the plate 311.
  • the plurality of pressing units 35 are configured to be able to partially press the upper surface of the intermediate plate 32, respectively. Since the pressing mechanism 34 includes the plurality of pressing units 35, the flatness of the intermediate plate 32 can be easily improved.
  • the pressing position of the intermediate plate 32 (the position where the pressing unit 35 is disposed) is not particularly limited, and typically, the central portion or the peripheral portion of the intermediate plate 32, or both of them may be mentioned.
  • FIG. 7 to 9 are side sectional views schematically showing the configuration of the pressing unit 35.
  • FIG. 7 shows a state before holding the substrate W
  • FIG. 8 shows a state immediately before holding the substrate
  • FIG. Reference numeral 9 denotes a state where the substrate W is held.
  • 7 shows a state in which the substrate W and the holding plate 33 are lowered from the raised position of the holding plate 33 shown in FIG. 2, the substrate W is placed on the upper surface of the mask plate 311, and the intermediate plate is The state which is not contacting the board
  • the intermediate plate 32 is drawn in a slightly deformed state (a state in which bending occurs), and holds the substrate W shown in FIG. In the state, the intermediate plate 32 is drawn in a state in which the deflection of the intermediate plate 32 is corrected (planar state).
  • a plurality of shaft portions 321 extending in the Z-axis direction are provided on the upper surface 32 b of the intermediate plate 32, and a plurality of through holes 332 are provided in the holding plate 33 and the magnet 331 so as to correspond to the positions of the shaft portions 321. Is provided.
  • the plurality of shaft portions 321 pass through the plurality of through holes 332, respectively, and heads 321 h that can come into contact with the periphery of the opening of the through holes 332 on the holding plate 33 side are provided at the upper ends thereof. .
  • Each shaft portion 321 is configured to have the same length.
  • the intermediate plate 32 is suspended by its own weight (for example, when the holding plate 33 is in the raised position)
  • the upper surface 32b of the intermediate plate 32 and the lower surface of the magnet 331 are formed.
  • the distance G1 is set to a length that is formed between the two. Accordingly, the intermediate plate 32 is supported so as to be relatively movable with respect to the holding plate 33 by a distance G1 at the longest in the Z-axis direction.
  • the head portion 321h of the shaft portion 321 is formed in an inverted truncated cone shape. Accordingly, in the suspended state of the intermediate plate 32 shown in FIG. 7, the axial center of each shaft portion 321 can be made coincident with the axial center of each through-hole 332, and thus the suspended posture of the intermediate plate 32 with respect to the holding plate 33. Can be maintained stably.
  • the opening on the holding plate 33 side of each through hole 332 may be formed in an inverted conical taper shape (conical shape) corresponding to the shape of the head portion 321h as shown in the figure. Good.
  • each pressing unit 35 is installed on the holding plate 33 and are respectively disposed at the penetrating positions of the plurality of shaft portions 321.
  • Each pressing unit 35 includes a pressing element 351 disposed at a position directly above the head 321 h of the shaft portion 321, and an elastic member 355 disposed between the pressing element 351 and the upper surface 32 b of the intermediate plate 32.
  • the pressing element 351 is disposed to face the head 321h of the shaft portion 321 in the Z-axis direction.
  • the pressing element 351 is made of, for example, a circular plate material, and a bolt member 352 extending in the Z-axis direction is fixed at the center thereof.
  • the bolt member 352 passes through the top of the support portion 353 installed on the upper surface of the holding plate 33 so as to surround the head portion 321 h of the shaft portion 321, and is screwed into the nut member 354 fixed to the upper surface of the support portion 353. ing. Therefore, by rotating the bolt member 352 about the axis relative to the nut member 354, the relative distance of the pressing element 351 with respect to the head portion 321h of the shaft portion 321 can be adjusted.
  • the elastic member 355 is elastically deformable in the Z-axis direction, and is installed on the upper surface of the head portion 321h of the shaft portion 321.
  • the elastic member 355 is typically configured by a coil spring, but is not limited thereto, and may be configured by an elastic material such as rubber or elastomer.
  • a distance G2 is formed between the upper surface of the elastic member 355 and the lower surface of the pressing element 351.
  • the distance G2 is set to a value smaller than the distance G1.
  • the value of the distance G2 may be zero.
  • the elastic member 355 may be installed not on the upper surface of the head portion 321h of the shaft portion 321 but on the lower surface of the presser 351.
  • the intermediate plate 32 has a first position shown in FIG. 7, a second position (contact position) shown in FIG. 8, and a second position shown in FIG. 9 with respect to the holding plate 33 (magnet 331). 3 positions (holding positions).
  • the intermediate plate 32 is configured to be movable along the Z-axis direction between the first position and the third position via the second position.
  • the intermediate plate 32 In the first position, the intermediate plate 32 is suspended from the holding plate 33, the lower surface 32 a of the intermediate plate 32 is not in contact with the substrate W, and the upper surface 32 b of the intermediate plate 32 is not connected to the holding plate 33 ( It faces the magnet 331) with a relative distance of the gap G1.
  • the lower surface 32a of the intermediate plate 32 In the second position, the lower surface 32a of the intermediate plate 32 is in contact with the substrate W, the holding plate 33 is lowered until the presser 351 is in contact with the upper surface of the elastic member 355, and the upper surface 32b of the intermediate plate 32 is held.
  • the plate 33 (magnet 331) faces the gap (G1-G2) with a relative distance (first distance).
  • the holding plate 33 In the third position, at least a part of the lower surface 32a of the intermediate plate 32 contacts the substrate W, and the holding plate 33 further descends by a predetermined amount while compressing and deforming the elastic member 355, and the upper surface 32b of the intermediate plate 32 Is opposed to the holding plate 33 (magnet 331) with a relative distance (second distance) of the gap G3 smaller than the gap (G1-G2).
  • the pressing mechanism 34 moves in the process of moving the intermediate plate 32 from the second position (contact position) to the third position (holding position). It becomes possible to press the upper surface 32b of the plate 32 along the Z-axis direction.
  • the lowering position of the holding plate 33 is set to a predetermined height position from the mask plate 311.
  • the pressing force of the intermediate plate 32 by the pressing mechanism 34 (the pressing unit 35) is set by the magnitude of the distance G2. Therefore, the pressing force can be easily adjusted by changing the distance G2.
  • the substrate holding device 30 further includes a support unit 36 that supports the substrate W transferred into the film forming chamber 10 between the mask plate 311 and the intermediate plate 32.
  • the support unit 36 includes, for example, a plurality of hooks that support the peripheral edge of the lower surface of the substrate W.
  • the support unit 36 is configured to be movable up and down between a substrate delivery position (FIG. 2) with a substrate transport apparatus (not shown) and a substrate placement position (FIG. 3) on the mask plate 311. Further, the support unit 36 is configured to be movable in the horizontal direction in order to enable alignment of the substrate W with respect to the mask plate 311.
  • the film forming apparatus 100 further includes a control unit 40 that controls operations of the evaporation source 20, the substrate holding device 30, the support unit 36, and the like.
  • the control unit 40 is typically configured by a computer, and controls the operation of each unit by executing a predetermined program.
  • the substrate W transported into the film forming chamber 10 via a gate valve (not shown) is supported by the support unit 36 waiting at the substrate transfer position with the film forming surface facing downward.
  • the holding plate 33 is moved to the raised position as shown in FIG. 2, and the intermediate plate 32 is suspended from the holding plate 33 by its own weight.
  • the substrate W is disposed between the intermediate plate 32 and the mask plate 311 by the support unit 36. Thereafter, horizontal alignment of the substrate W with respect to the mask plate 311 is performed.
  • the support unit 36 After the alignment of the substrate W, the support unit 36 is lowered to the substrate placement position, and the substrate W is placed on the upper surface of the mask plate 311.
  • a plurality of relief portions (recesses) 312a for avoiding a collision with the support unit 36 lowered to the substrate mounting position are provided on the upper surface of the frame portion 312 of the mask member 31.
  • the holding plate 33 moves from the raised position shown in FIG. 2 to the lowered position shown in FIG. Thereby, the lower surface 32 a of the intermediate plate 32 comes into contact with the non-deposition surface (non-deposition surface) of the substrate W, and the magnet 331 approaches the upper surface 32 b of the intermediate plate 32 by the relative movement of the holding plate 33 with respect to the intermediate plate 32. To do. At this time, the magnet 331 stops with a slight gap (G3) with respect to the upper surface 32b of the intermediate plate.
  • each pressing unit 35 is partially pressed toward the substrate W and the mask plate 311 in the Z-axis direction.
  • the intermediate plate 32 is pressed toward the mask plate 311 by the pressing unit 35 with a pressing amount corresponding to the distance of (G1-G2-G3).
  • the flatness of the intermediate plate 32 is increased by correcting the bend or deformation to be flat (FIG. 9).
  • the contact area of the lower surface 32a of the intermediate plate 32 with respect to the substrate W is increased, so that the relative distance between the magnet 331 and the mask plate 311 is also shortened, and the magnetic attractive force of the mask plate 311 by the magnet 331 is increased. Adhesion with the mask plate 311 is improved.
  • the intermediate plate 32, the substrate W, and the mask plate 311 are integrally held. Thereafter, a film forming process for the substrate W is performed.
  • the gap between the substrate W and the mask plate 311 can be made as small as possible, thereby vapor deposition from the gap. The wraparound of the material can be prevented.
  • the flatness of the intermediate plate 32 is increased by the pressing unit 35, the flatness of the substrate W following the lower surface 32a of the intermediate plate 32 is also ensured. Thereby, a highly accurate mask film forming process can be realized on the film forming surface of the substrate W. Furthermore, by performing the film formation process while reciprocating the evaporation source 20 in the horizontal direction, it is possible to improve the in-plane uniformity of the film formation process over the entire film formation surface of the substrate W.
  • the substrate holding device 30 moves the holding plate 33 from the lowered position shown in FIG. 3 to the raised position shown in FIG. At this time, the substrate W is pressed against the mask plate 311 by the pressing force of the pressing unit 35 and the weight of the intermediate unit until the holding plate 33 moves by a predetermined distance (a distance corresponding to G1-G3). Maintained. Thereby, since the position shift of the substrate W with respect to the mask plate 311 is prevented, the vapor deposition pattern formed on the film formation surface is prevented from being damaged at the mask opening. Further, since the intermediate plate 32 is made of a nonmagnetic material, the magnet 331 can be easily separated from the mask plate 311.
  • the support unit 36 rises to the substrate delivery position (FIG. 2). Then, the film-formed substrate W is carried out of the film forming chamber 10 through a substrate transfer device (not shown). Further, a new substrate W to be deposited is transferred to the support unit 36, and holding and deposition of the substrate W are performed through the same operation as described above.
  • the intermediate plate 32 has a function of maintaining the planar state of the substrate W by contacting the non-deposition surface of the substrate W facing the mask plate 311.
  • the flatness of the intermediate plate 32 itself may decrease as the size of the intermediate plate 32 increases or the thickness of the intermediate plate 32 decreases. Therefore, the substrate holding device 30 of this embodiment includes a pressing mechanism 34 that presses at least a part of the intermediate plate 32 toward the mask plate 311 side. As a result, the flatness of the intermediate plate 32 is increased. As a result, the flatness of the substrate in contact with the intermediate plate 32 is also maintained, and good adhesion with the mask plate 311 is ensured. Further, since the intermediate plate 32 can be thinned, it is possible to ensure a stable adhesion between the mask plate 311 and the substrate W regardless of the substrate size.
  • the pressing mechanism 34 (the pressing unit 35) is disposed so as to face the upper surface 32b of the intermediate plate 32. Therefore, no mechanism unit is provided on the evaporation source 20 side of the mask plate 311.
  • the mask plate 311 and the substrate W can be brought into close contact with each other without installing. Therefore, the adhesion effect between the mask plate 311 and the substrate W can be stably maintained without depending on the aperture ratio of the mask plate 311 and the arrangement form of the mask openings.
  • the pressing mechanism 34 is installed on the holding plate 33, the configuration of the apparatus can be simplified and a desired position of the intermediate plate 32 can be stably pressed.
  • the substrate holding device 30 of the present embodiment is configured so that the intermediate plate 32 can be pressed in the direction of gravity by the pressing mechanism 34. Accordingly, since the decrease in flatness due to the bending deformation of the substrate W or the intermediate plate 32 can be prevented by utilizing the dead weight of the intermediate plate 32, it is possible to stably obtain a desired film forming accuracy. Become.
  • the vacuum deposition apparatus has been described as an example of the film forming apparatus.
  • the present invention is not limited to this, and the present invention can be applied to other film forming apparatuses such as a sputtering apparatus.
  • a sputtering cathode holding the sputtering target is configured as a film forming source.
  • the plurality of pressing units 35 constituting the pressing mechanism 34 are not limited to being arranged at the central portion and / or the peripheral portion of the intermediate plate 32.
  • the pressing unit 35 is provided at the intermediate portion 32 in addition to the central portion, the peripheral portion, and the four corner portions. It may be arranged.
  • the number of arrangement of the pressing units 35 is not particularly limited, and at least one is sufficient when pressing any part of the intermediate plate. When pressing almost the entire area of the intermediate plate, more pressing units are required. What is necessary is just to arrange
  • a frame-shaped pressing unit 37 that can collectively press the peripheral edge of the intermediate plate 32 may be used.
  • the pressing mechanism 34 is installed on the holding plate 33 .
  • the present invention is not limited to this, and the pressing mechanism 34 may be configured independently of the holding plate 33.

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

L'invention concerne un dispositif de maintien de substrat qui est capable d'assurer l'adhérence entre un masque et un substrat. Ce dispositif de maintien de substrat 30 est pourvu : d'une plaque de masque 311 ; d'une plaque intermédiaire 32 ; d'une plaque de maintien 33 ; et d' un mécanisme de compression 34. La plaque de masque 311 est conçue à partir d'un matériau magnétique. La plaque intermédiaire 32 comprend une première surface faisant face à la plaque de masque 311 et une seconde surface qui est sur le côté inverse de la première surface, et est conçue de telle sorte que la première surface est capable de venir en contact avec un substrat W qui est agencé sur la plaque de masque 311. La plaque de maintien 33 supporte la plaque intermédiaire 32 de telle sorte que la plaque intermédiaire 32 est relativement mobile dans une direction axiale qui est perpendiculaire à la plaque de masque 311, et comprend un aimant 331 qui est conçu de manière à être capable d'aspirer magnétiquement la plaque de masque 311, la plaque intermédiaire 32 et le substrat W étant intercalés entre ceux-ci. Le mécanisme de compression 34 est agencé de manière à faire face à la seconde surface, et est conçu de manière à être capable d'exercer une pression sur au moins une partie de la seconde surface dans la direction axiale décrite ci-dessus.
PCT/JP2016/066899 2015-06-12 2016-06-07 Dispositif de maintien de substrat, appareil de formation de film et procédé de maintien de substrat WO2016199759A1 (fr)

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JP2017523645A JP6500103B2 (ja) 2015-06-12 2016-06-07 基板保持装置及び成膜装置
CN201680034320.6A CN107710397B (zh) 2015-06-12 2016-06-07 基板保持装置、成膜装置和基板保持方法
SG11201710300SA SG11201710300SA (en) 2015-06-12 2016-06-07 Substrate holding device, film deposition device, and substrate holding method
KR1020177028877A KR102091560B1 (ko) 2015-06-12 2016-06-07 기판 보지 장치, 성막 장치 및 기판 보지 방법

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JP2015119062 2015-06-12
JP2015-119062 2015-06-12

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KR (1) KR102091560B1 (fr)
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WO (1) WO2016199759A1 (fr)

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JP2019117922A (ja) * 2017-12-26 2019-07-18 キヤノントッキ株式会社 成膜装置、成膜方法及びこれを用いる有機ｅｌ表示装置の製造方法
JPWO2021015224A1 (fr) * 2019-07-23 2021-01-28
CN112750743A (zh) * 2019-10-29 2021-05-04 佳能特机株式会社 基板保持装置、成膜方法及电子器件的制造方法
JP2021073373A (ja) * 2021-01-05 2021-05-13 キヤノントッキ株式会社 基板載置方法、電子デバイスの製造方法、基板保持装置、及び電子デバイスの製造方法
CN112853273A (zh) * 2020-12-31 2021-05-28 南京深光科技有限公司 一种柔性amoled掩模版表面镀膜设备

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CN110819937A (zh) * 2018-08-14 2020-02-21 上海和辉光电有限公司 掩膜板移动治具
CN111188012A (zh) * 2018-11-14 2020-05-22 广东聚华印刷显示技术有限公司 蒸镀装置及蒸镀膜的制备方法、电致发光器件及制备方法
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CN109928210A (zh) * 2019-04-04 2019-06-25 东莞市敏顺自动化科技有限公司 多工件自动上下料机构
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JP2019117922A (ja) * 2017-12-26 2019-07-18 キヤノントッキ株式会社 成膜装置、成膜方法及びこれを用いる有機ｅｌ表示装置の製造方法
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CN112750743A (zh) * 2019-10-29 2021-05-04 佳能特机株式会社 基板保持装置、成膜方法及电子器件的制造方法
CN112750743B (zh) * 2019-10-29 2023-07-21 佳能特机株式会社 基板保持装置、成膜方法及电子器件的制造方法
CN112853273A (zh) * 2020-12-31 2021-05-28 南京深光科技有限公司 一种柔性amoled掩模版表面镀膜设备
CN112853273B (zh) * 2020-12-31 2022-12-16 南京深光科技有限公司 一种柔性amoled掩模版表面镀膜设备
JP2021073373A (ja) * 2021-01-05 2021-05-13 キヤノントッキ株式会社 基板載置方法、電子デバイスの製造方法、基板保持装置、及び電子デバイスの製造方法

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SG11201710300SA (en) 2018-01-30
CN107710397B (zh) 2021-02-19
JP6500103B2 (ja) 2019-04-10
CN107710397A (zh) 2018-02-16
JPWO2016199759A1 (ja) 2018-01-25
KR102091560B1 (ko) 2020-03-20
KR20170122830A (ko) 2017-11-06
TWI632639B (zh) 2018-08-11

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