JPH07263529A - Electrostatic attraction apparatus - Google Patents
Electrostatic attraction apparatusInfo
- Publication number
- JPH07263529A JPH07263529A JP4855294A JP4855294A JPH07263529A JP H07263529 A JPH07263529 A JP H07263529A JP 4855294 A JP4855294 A JP 4855294A JP 4855294 A JP4855294 A JP 4855294A JP H07263529 A JPH07263529 A JP H07263529A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- electrostatic
- attraction
- vacuum
- parameter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、導体またはシリコンウ
エハのような半導体等、微細加工に供される試料を固定
保持する静電吸着装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrostatic attraction device for holding and holding a sample such as a conductor or a semiconductor such as a silicon wafer to be subjected to microfabrication.
【０００２】[0002]
【従来の技術】半導体ウエハ等の試料をエッチング、あ
るいはスパッタ，ＣＶＤ等のような成膜を施す場合に
は、試料を装置の所定の位置に固定保持することが必要
となる。特に、半導体ウエハ上に微細パターンを加工す
る場合には、ウエハのパターン焼き付けのため、反りを
矯正し平坦化を行う、あるいは、エッチング，成膜時の
熱伝導率向上のため、ウエハを確実に密着固定すること
等が要求される。従来から、このような用途の試料保持
手段として、真空中でも使用でき、またウエハ裏面全体
で一様に吸着力を発生することができる静電吸着装置が
用いられている。さらに、真空中でウエハ保持ができる
ため、真空中高速搬送の保持装置としても利用されてい
る。この静電吸着装置は、電極板と誘電体とを積層して
構成され、電極板と試料間に電位差を生じさせることに
より、クーロン力を発生させ誘電体上に試料を吸着保持
させる。2. Description of the Related Art When a sample such as a semiconductor wafer is subjected to etching or film formation such as sputtering or CVD, it is necessary to fix and hold the sample at a predetermined position of an apparatus. In particular, when processing a fine pattern on a semiconductor wafer, the warp is corrected to flatten the wafer by patterning the wafer, or the thermal conductivity is improved during etching and film formation. It is required to fix them closely. Conventionally, as a sample holding means for such an application, an electrostatic adsorption device that can be used even in a vacuum and that can uniformly generate an adsorption force on the entire back surface of a wafer has been used. Further, since the wafer can be held in vacuum, it is also used as a holding device for high-speed transfer in vacuum. This electrostatic adsorption device is configured by laminating an electrode plate and a dielectric, and generates a potential difference between the electrode plate and the sample, thereby generating a Coulomb force and adsorbing and holding the sample on the dielectric.
【０００３】このような静電吸着装置に関しては、例え
ば、特開昭59−79545 号，特開平4−216650号公報があ
る。Regarding such an electrostatic attraction device, for example, there are JP-A-59-79545 and JP-A-4-216650.
【０００４】[0004]
【発明が解決しようとする課題】ところで、すでに述べ
たように半導体製造におけるエッチング、あるいはスパ
ッタ，ＣＶＤ等の半導体ウエハ上に微細パターンを加工
する場合には、ウエハの反りを矯正し平坦化を行う、あ
るいは熱伝導率向上の目的で、ウエハを確実に吸着固定
すること等が要求される。そのため量産装置では、自動
化運転等に対応するため、その吸着状態を確認する必要
がある。By the way, as already mentioned, when a fine pattern is processed on a semiconductor wafer by etching, sputtering, CVD, or the like in semiconductor manufacturing, the warp of the wafer is corrected and the wafer is flattened. Alternatively, for the purpose of improving the thermal conductivity, it is required to securely suck and fix the wafer. Therefore, in the mass production device, it is necessary to confirm the adsorption state in order to cope with automated operation and the like.
【０００５】特開昭59−79545 号公報では、静電吸着の
確認手段として、静電吸着装置を構成する回路に流れる
定常電流を検出し、固定保持されたか否かの確認を行っ
ているが、プロセスを経てきたウエハの被吸着面には、
プロセスの種類によって異なった膜が形成されており、
抵抗値が異なるため、測定される定常電流値はウエハの
通ったプロセスによりまちまちの値を示す。したがっ
て、測定された電流値によって一意的に平坦化されたか
否かの判断をするには不都合があった。In Japanese Patent Laid-Open No. 59-79545, as a means for confirming electrostatic attraction, a steady current flowing in a circuit constituting the electrostatic attraction device is detected to confirm whether or not it is fixedly held. , The surface of the wafer that has undergone the process
Different films are formed depending on the type of process,
Since the resistance values are different, the measured steady-state current value varies depending on the process through which the wafer passes. Therefore, it is inconvenient to judge whether or not the flattening is performed uniquely based on the measured current value.
【０００６】また、特開平4−216650 号公報に挙げられ
る開示例では、吸着状態の確認手段として、ウエハとウ
エハ下面に設置された電極の静電容量を測定し、ウエハ
が理想的に保持された状態との静電容量の変化から吸着
状態を判断しているが、先に述べたようにプロセスを経
たウエハ表面にはプロセスにより異なった種類の膜が、
異なった厚さで形成されているため、測定される静電容
量はウエハにより異なり、静電容量の値のみで一意的に
確認するには不都合があった。Further, in the disclosed example disclosed in Japanese Patent Laid-Open No. 4-216650, the electrostatic capacity of the wafer and the electrodes installed on the lower surface of the wafer is measured as a means for confirming the adsorption state, and the wafer is ideally held. The adsorption state is judged from the change in the electrostatic capacity between the state and the state, but as described above, different types of films are formed on the wafer surface after the process, depending on the process.
Since they are formed with different thicknesses, the measured capacitance differs depending on the wafer, and it is inconvenient to uniquely confirm only the capacitance value.
【０００７】以上、どちらの開示例の場合もプロセス中
にウエハ裏面に付着する膜の材質，膜厚による影響等が
考慮されていないため、確実に吸着されたか否か、ある
いは被保持物体の吸着状態が理想的に吸着されている場
合の何割程度の吸着力であるかの判断は不可能である。As described above, in both of the disclosed examples, since the influence of the material and the film thickness of the film adhered to the back surface of the wafer during the process is not taken into consideration, it is determined whether or not the film is reliably adsorbed, or the object to be held is adsorbed. It is impossible to determine what percentage of the adsorption force the state has when it is ideally adsorbed.
【０００８】本発明の目的は、静電吸着装置で、ウエハ
が吸着されている場合の吸着状態、および吸着力を評価
する方法を提供することにある。It is an object of the present invention to provide a method for evaluating an attracting state and an attracting force when a wafer is attracted by an electrostatic attracting device.
【０００９】[0009]
【課題を解決するための手段】本発明は、上記目的を達
成するため、静電吸着装置に真空吸着する手段と、吸着
の際に変化する、吸着状態を表すパラメータ，電気的、
または物理的な特性値の変化を検出する手段を設け、真
空吸着により確実に吸着した場合のパラメータと、静電
吸着により吸着した場合のパラメータを比較評価する。
ただし、本発明の装置を真空プロセスで使用する場合、
真空吸着するために装置内圧力を真空吸着できる圧力ま
で上昇させる必要がある。そこで、装置内圧力をコント
ロールするため、装置にはバルブを介してガス導入手段
を設ける。In order to achieve the above-mentioned object, the present invention provides means for vacuum-sucking an electrostatic chucking device, a parameter representing a chucking state that changes during chucking, an electrical,
Alternatively, a means for detecting a change in a physical characteristic value is provided, and a parameter when securely adsorbed by vacuum adsorption and a parameter when electrostatically adsorbed are compared and evaluated.
However, when using the device of the present invention in a vacuum process,
In order to perform vacuum adsorption, it is necessary to raise the internal pressure of the device to a pressure at which vacuum adsorption is possible. Therefore, in order to control the pressure inside the device, the device is provided with a gas introducing means via a valve.
【００１０】例えば、同一のプロセスを通過したウエハ
の中から１枚を抜き取り、真空吸着により確実に保持
し、吸着状態を表すパラメータをモニタリングしてお
く。このプロセスを通過した他のウエハは、吸着状態を
表すパラメータを、あらかじめモニタリングしておいた
初めの１枚のウエハのパラメータと比較すれば、吸着状
態，吸着力が評価できる。ここでいう吸着状態を示すパ
ラメータとは、吸着の際に示す電気的、または物理的特
性値の変化であり、例えば、回路に流れる電流値、また
はウエハ・静電吸着装置間の静電容量、あるいはウエハ
・静電吸着装置間の隙間でも良い。すなわち、吸着され
たことにより変化するパラメータであればよい。For example, one wafer is taken out from the wafers that have passed through the same process, held securely by vacuum suction, and the parameter indicating the suction state is monitored. For other wafers that have passed through this process, the suction state and the suction force can be evaluated by comparing the parameters representing the suction state with the parameters of the first wafer that has been monitored in advance. The parameter indicating the suction state here is a change in the electrical or physical characteristic value shown at the time of suction, for example, the current value flowing in the circuit, or the electrostatic capacitance between the wafer and the electrostatic suction device, Alternatively, it may be a gap between the wafer and the electrostatic attraction device. That is, any parameter that changes due to being adsorbed may be used.
【００１１】[0011]
【作用】静電吸着装置の電極板と被保持物体に電圧を印
加した場合、両者の間には吸着力が生じ、吸着状態を示
す様々なパラメータを示す。When a voltage is applied to the electrode plate of the electrostatic chuck and the object to be held, a chucking force is generated between them and various parameters showing the chucking state are shown.
【００１２】例えば、それは回路に流れる電流値、ウエ
ハ・静電吸着装置間の静電容量、またはウエハ・静電吸
着装置間の隙間である。For example, it is the value of the current flowing in the circuit, the capacitance between the wafer and the electrostatic attraction device, or the gap between the wafer and the electrostatic attraction device.
【００１３】本発明の静電吸着装置保持状態確認方法
は、真空吸着する手段を持つため、静電吸着と真空吸着
を同時に動作させることにより、変形の大きなウエハで
あっても真空吸着により確実に保持できる。したがっ
て、そのときの静電吸着による吸着状態を示すパラメー
タをモニタリングし、この値を１００％の吸着力が得ら
れた場合の値とする。それ以降のウエハ固定は静電吸着
のみを動作させ、基準値と比較することによって、静電
吸着により吸着した場合の吸着力を評価することができ
る。さらに、本発明の静電吸着装置にはガス導入手段が
備えられているため、真空プロセスの途中で用いる場合
には、ガスを導入し雰囲気圧力を真空吸着できる圧力に
上昇させることにより対応できる。Since the electrostatic chucking device holding state confirmation method of the present invention has a means for vacuum chucking, by simultaneously operating electrostatic chucking and vacuum chucking, even if the wafer has a large deformation, it can be surely held by vacuum chucking. Can hold Therefore, the parameter indicating the adsorption state by electrostatic adsorption at that time is monitored, and this value is taken as the value when 100% of the adsorption force is obtained. For the subsequent wafer fixing, only electrostatic attraction is operated, and by comparing with a reference value, the attraction force when attracted by electrostatic attraction can be evaluated. Further, since the electrostatic adsorption device of the present invention is provided with the gas introduction means, when it is used in the middle of the vacuum process, it can be dealt with by introducing the gas and raising the atmospheric pressure to a pressure capable of vacuum adsorption.
【００１４】さらに、同一のプロセスを通過したウエハ
の吸着力を評価する際には、初めの１枚のウエハを真空
吸着により確実に保持し、パラメータを検出しておけ
ば、残りの全てのウエハについて、吸着力の有無ばかり
でなく、確実に吸着した場合の何％の吸着力になってい
るかが評価できる。Further, when evaluating the suction force of the wafers that have passed through the same process, if the first one wafer is securely held by vacuum suction and the parameters are detected, all the remaining wafers are held. Regarding, regarding not only the presence or absence of the suction force, but also the percentage of the suction force when the suction is surely performed can be evaluated.
【００１５】[0015]
【実施例】図１は本発明の第一の実施例を示す断面図で
あり、図２は図１の平面図である。図１で、１は固定保
持される被保持物体、例えば半導体ウエハ、２は静電吸
着装置を構成する誘電体、３は電極板であり、４はウエ
ハから取られる導通部、７はウエハ１と電極板３との間
に電位差を発生させる電源である。なお、導通部４は、
確実にウエハ１から導通を取るため弱いばね系９を介し
てウエハ１に接触している。また、誘電体２の抵抗率は
使用温度で抵抗率１０9Ωcm から１０12Ωcm程度が好ま
しい。６は吸着状態を示すパラメータを検知する検出手
段であり、８は静電吸着する手段とは独立に１を真空吸
着する手段である。1 is a sectional view showing a first embodiment of the present invention, and FIG. 2 is a plan view of FIG. In FIG. 1, 1 is a held object to be fixedly held, for example, a semiconductor wafer, 2 is a dielectric that constitutes an electrostatic adsorption device, 3 is an electrode plate, 4 is a conducting part taken from the wafer, and 7 is the wafer 1. Is a power source that generates a potential difference between the electrode plate 3 and the electrode plate 3. The conducting portion 4 is
In order to ensure conduction from the wafer 1, the wafer 1 is in contact with the wafer 1 via a weak spring system 9. The resistivity of the dielectric 2 is preferably about 10 9 Ωcm to 10 12 Ωcm at the operating temperature. Reference numeral 6 is a detection means for detecting a parameter indicating the adsorption state, and 8 is a means for vacuum adsorption of 1 independently of the electrostatic adsorption means.
【００１６】このように構成された静電吸着装置で、ま
ずウエハ１は静電吸着装置の吸着面２′に載せられ、電
源７により所定の電圧が電極板３とウエハ１との間に印
加される。そして、ウエハ１はこのとき発生する静電気
力によって吸着面２′に吸着保持される。ウエハ搬送、
あるいは所定の処理が終わりウエハを静電吸着装置から
開放する場合には電源７により印加された電圧を切断す
る。In the electrostatic chucking device thus constructed, the wafer 1 is first placed on the chucking surface 2'of the electrostatic chucking device, and a predetermined voltage is applied between the electrode plate 3 and the wafer 1 by the power supply 7. To be done. Then, the wafer 1 is attracted and held on the attraction surface 2'by the electrostatic force generated at this time. Wafer transfer,
Alternatively, when the predetermined processing is completed and the wafer is released from the electrostatic attraction device, the voltage applied by the power supply 7 is cut off.
【００１７】以上のような操作を施した場合、ウエハ
１，電極板３間では吸着・脱離の際に様々なパラメータ
の変化を示す。例えば、それは回路に流れる電流値，ウ
エハ−静電吸着装置間の静電容量、またはウエハ−静電
吸着装置間の隙間である。これらのパラメータの変化を
モニタすれば、ウエハの吸着状態を評価する上での、指
標とすることができる。そこで本実施例では、静電吸着
装置内に真空吸着手段を設け、静電吸着と真空吸着を同
時に動作させる。この場合、ウエハは多少の変形があっ
ても真空吸着により確実に吸着されるため、そのときパ
ラメータ検出器６により検出されるパラメータは１００
％の吸着力が得られた場合の値となる。このときの値を
メモリ１１に保存しておき、実際にウエハを静電吸着さ
せた場合の吸着力の評価は、そのときに示すパラメータ
の値とメモリ内に保存しておいた値を比較回路１２で比
較することにより行う。比較の際にはしきい値を設け、
これを基準に吸着力の有無を判断できる。さらに、吸着
力が発生している場合に、パラメータの絶対値を比較す
ることにより、その吸着力が理想的に吸着した場合の何
割程度の値であるかも評価することができる。When the above-mentioned operation is performed, various parameters change between the wafer 1 and the electrode plate 3 during adsorption / desorption. For example, it is the value of current flowing in the circuit, the capacitance between the wafer and the electrostatic attraction device, or the gap between the wafer and the electrostatic attraction device. By monitoring changes in these parameters, it can be used as an index for evaluating the suction state of the wafer. Therefore, in this embodiment, a vacuum suction means is provided in the electrostatic suction device, and the electrostatic suction and the vacuum suction are simultaneously operated. In this case, the wafer is reliably attracted by the vacuum attraction even if the wafer is slightly deformed. Therefore, the parameter detected by the parameter detector 6 at that time is 100.
It is the value when the adsorption force of% is obtained. The value at this time is stored in the memory 11, and the attraction force when the wafer is actually electrostatically attracted is evaluated by comparing the parameter value shown at that time with the value stored in the memory. This is done by comparing in 12. Set a threshold for comparison,
The presence or absence of the suction force can be determined based on this. Furthermore, by comparing the absolute values of the parameters when the suction force is generated, it is possible to evaluate what percentage of the suction force the ideal suction force is.
【００１８】次に具体的な吸着モニタ方法について、図
３，図４を用いて詳しく説明する。図３は吸着確認パラ
メータ検出手段６として、電流検出器１３を設け、電流
値の変化をモニタしたものであり、この場合、静電吸着
装置を構成する回路間に流れる電流は図４のようなパタ
ーンを示す。電圧印加時、すなわち、吸着開始時ｔ1に
はウエハ１と電極板３間に電荷が蓄積されるために過渡
的にピーク値Ｖ2 を持つ電流１４が流れ、電荷の蓄積が
終了するｔ2 から誘電体２の持つ抵抗値に対応する微小
電流Ｖ1が流れる。そして、電圧切断時、すなわちウエ
ハ１の脱離時ｔ3にはウエハ１と電極板３間に蓄積され
た電荷が放電されるために逆向きにピーク値Ｖ3 を持つ
電流１５が流れた後に電流値は零となる。Next, a specific adsorption monitoring method will be described in detail with reference to FIGS. In FIG. 3, a current detector 13 is provided as the adsorption confirmation parameter detection means 6 to monitor changes in the current value. In this case, the current flowing between the circuits constituting the electrostatic adsorption device is as shown in FIG. The pattern is shown. When a voltage is applied, i.e., the suction start time t 1 transiently current 14 flows with a peak value V 2 to the charge between the wafer 1 and the electrode plate 3 are accumulated, the accumulation of charge is completed t 2 A minute current V 1 corresponding to the resistance value of the dielectric 2 flows from. Then, when a voltage is disconnected, or after the current 15 having a peak value V 3 in the reverse direction flows to the de Hanaretoki t 3 of the wafer 1 which charges accumulated between the wafer 1 and the electrode plate 3 is discharged The current value becomes zero.
【００１９】従って、ピーク電流値Ｖ2 、定常電流値Ｖ
1 は、吸着確認のためのパラメータになり得る。あるい
はピーク電流Ｖ2 を時間で積分すれば、蓄積された電荷
量になるため、この積分値を吸着確認のパラメータとす
ることもできる。しかし、この場合、ウエハの吸着面、
すなわち、裏面には種々のプロセスを通過してくるため
に、例えば、ＳｉＯ2 膜やＴｉＮ膜などの絶縁膜が付い
ており、通過してきたプロセスの種類によって異なった
抵抗値を持つ。すなわち、通過したプロセスの種類によ
って異なった電流波形（ピーク値，定常電流値）を示
す。そこでそれぞれのプロセスを通過したウエハの中か
ら１枚を抜き取り、真空吸着により確実に吸着させ、そ
の状態で静電吸着装置に電圧を印加する。このときの電
流値をモニタして、１００％の吸着力が得られた場合の
パラメータとする。同じプロセスを通過したウエハの裏
面にはすべて同じ種類の膜が、同じ厚さで付いていると
考えられるので、吸着力の評価は得られる電流値を、初
めの１枚のウエハの電流値と比較すればよいことにな
る。例えば、ピーク電流値Ｖ2 を吸着確認パラメータと
するならば、しきい値を設定しておき、ウエハ１と電極
板３が吸着する際のピークの大きさがモニタリングして
おいたデータのしきい値より大きければ吸着力が有り、
小さければ吸着力が無いものとし、吸着確認の手段にで
きる。また、吸着力が有ると判断された場合、さらにピ
ーク値の大きさからその吸着力が理想的に吸着した場合
の何割程度発生しているか確認する手段にもなる。この
ほか確認のパラメータとして定常電流値、または電流波
形そのものを用いて、同じように比較評価することもで
きる。Therefore, the peak current value V 2 and the steady current value V
1 can be a parameter for confirmation of adsorption. Alternatively, if the peak current V 2 is integrated over time, the accumulated charge amount is obtained, and therefore this integrated value can be used as a parameter for confirmation of adsorption. However, in this case, the suction surface of the wafer,
That is, since the back surface passes through various processes, an insulating film such as a SiO 2 film or a TiN film is attached to the back surface, and the resistance value varies depending on the type of the process that has passed through. That is, different current waveforms (peak value, steady current value) are shown depending on the type of process that has passed. Therefore, one wafer is extracted from the wafers that have passed through the respective processes, and it is surely adsorbed by vacuum adsorption, and in that state, a voltage is applied to the electrostatic adsorption device. The current value at this time is monitored and used as a parameter when 100% of the suction force is obtained. Since it is considered that the same kind of film has the same thickness on the back surface of all the wafers that have gone through the same process, the evaluation of the adsorption force is based on the obtained current value as the current value of the first wafer. It will be good to compare. For example, if the peak current value V 2 is used as the adsorption confirmation parameter, a threshold value is set, and the threshold value of the peak value when the wafer 1 and the electrode plate 3 are adsorbed is monitored. If it is larger than the value, there is adsorption power,
If it is small, it means that there is no adsorption force, and it can be used as a means for confirming adsorption. Further, when it is determined that the suction force is present, it also serves as a means for confirming from the magnitude of the peak value, what percentage of the suction force the ideal suction force has occurred. In addition, a steady current value or the current waveform itself may be used as a confirmation parameter to perform the same comparative evaluation.
【００２０】電流検出手段は、回路中に微小電流計を設
置してもよいし、静電吸着装置の誘電体２の抵抗値に対
して十分小さい値を持つ既知の抵抗を直列に設置してそ
の両端の電圧を計測することによって電流値を検出して
も簡便でよい。また、本発明における電流検出手段はこ
れらの方法に限定されるものではない。As the current detecting means, a minute ammeter may be installed in the circuit, or a known resistor having a value sufficiently smaller than the resistance value of the dielectric body 2 of the electrostatic attraction device may be installed in series. The current value may be detected simply by measuring the voltage across the ends. Further, the current detection means in the present invention is not limited to these methods.
【００２１】さらに、本モニタ方法による結果をフィー
ドバックし、電源からの電圧を制御する、あるいは静電
チャックを搭載している装置全体、例えばエッチャ等の
半導体製造装置、あるいは真空ロボット等の制御装置に
フィードバックして装置全体の安全装置、あるいは運転
モニタとして利用することもできる。Further, the results of the present monitoring method are fed back to control the voltage from the power source, or to the entire apparatus equipped with an electrostatic chuck, for example, a semiconductor manufacturing apparatus such as an etcher or a control apparatus such as a vacuum robot. It can also be fed back and used as a safety device for the entire device or as an operation monitor.
【００２２】本実施例では、各回路の電極板が一枚であ
り、ウエハから導通を取る方式のいわゆる単極型の静電
吸着装置に関して説明したが、双極型の静電吸着装置で
も同様の効果が得られる。In the present embodiment, a so-called monopolar type electrostatic adsorption device of the type in which each circuit has one electrode plate and which conducts electricity from the wafer has been described, but the same applies to a bipolar type electrostatic adsorption device. The effect is obtained.
【００２３】また、図５に示すように、吸着確認パラメ
ータ検出手段６としてウエハ１と電極板３間に静電容量
検出器１６を用いてもよい。しかし、ウエハの吸着面、
すなわち、裏面には、種々のプロセスを通過してくるた
めに、絶縁膜が付着しており、通過してきたプロセスの
種類によって異なった抵抗値を持つため、静電容量も、
プロセスによってまちまちの値を示す。そこで同じよう
にそれぞれのプロセスを通過したウエハの中から１枚を
抜き取り、真空吸着により確実に吸着させ、その状態で
静電吸着装置に電圧を印加する。このときの静電容量を
モニタして、１００％の吸着力が得られた場合のパラメ
ータとすれば、同様の効果が得られる。Further, as shown in FIG. 5, a capacitance detector 16 may be used as the adsorption confirmation parameter detecting means 6 between the wafer 1 and the electrode plate 3. However, the suction surface of the wafer,
In other words, the back surface has an insulating film attached to it in order to pass through various processes, and since it has a different resistance value depending on the type of process that has passed through, the capacitance is also
Shows different values depending on the process. Therefore, in the same manner, one wafer is extracted from the wafers that have passed through the respective processes, and the wafer is reliably attracted by vacuum attraction, and a voltage is applied to the electrostatic attraction device in that state. The same effect can be obtained by monitoring the electrostatic capacity at this time and setting it as a parameter when 100% of the suction force is obtained.
【００２４】このような手法を用いることにより、常圧
プロセスにはもちろん対応できるが、真空プロセスに用
いる場合も、装置を真空排気する前に真空吸着し、デー
タを検出し保存しておく、または、あらかじめ常圧状態
で真空吸着した場合に検出したパラメータをデータベー
ス化しておくこと等により対応可能である。By using such a method, it is of course possible to cope with an atmospheric pressure process, but even when it is used in a vacuum process, it is vacuum-sucked before the apparatus is evacuated, data is detected and stored, or This can be dealt with by, for example, creating a database of the parameters detected when vacuum suction is performed under normal pressure.
【００２５】これ以外にも、メモリに保存するデータを
検出する場合だけガスを導入し、真空吸着できる圧力に
して、真空吸着してパラメータを検出することも可能で
ある。Besides this, it is also possible to introduce the gas only when detecting the data to be stored in the memory, make the pressure so that it can be vacuum-adsorbed, and detect the parameter by vacuum-adsorption.
【００２６】本発明の第二の実施例を図６のプラズマ処
理装置を用いて説明する。図６で１７は半導体製造装置
の真空処理室、１８は上部電極、１９は静電吸着装置、
２０は圧力検出器、２１は真空ポンプ、２２はガス導入
手段である。A second embodiment of the present invention will be described using the plasma processing apparatus shown in FIG. In FIG. 6, 17 is a vacuum processing chamber of a semiconductor manufacturing apparatus, 18 is an upper electrode, 19 is an electrostatic adsorption device,
20 is a pressure detector, 21 is a vacuum pump, and 22 is a gas introduction means.
【００２７】プラズマ処理装置の真空処理室１７の静電
吸着装置１９上に被保持物体１を載置し、静電吸着力を
評価する際、実施例１に示すように、まず、被保持物体
１を真空吸着によって保持しなければならない。しか
し、本装置の場合処理室内が真空であるため、装置内の
圧力を真空吸着できる圧力まで上昇させる必要がある。
本実施例ではこの装置にガスを導入する手段２２を設
け、装置内圧力を真空吸着できる圧力まで上昇させ、被
保持物体１を真空吸着することができる。処理室内の圧
力を上昇させる際は、例えば、０.５atmなど１.０atm以
下の圧力でもよく、真空吸着できる圧力であればよい。
また、この際導入するガスとしては、Ｈｅ，Ｎ2 など不
活性ガスが好ましい。When the held object 1 is placed on the electrostatic adsorption device 19 in the vacuum processing chamber 17 of the plasma processing apparatus and the electrostatic adsorption force is evaluated, as shown in the first embodiment, first, the held object 1 1 must be held by vacuum adsorption. However, in the case of this apparatus, since the processing chamber is in a vacuum, it is necessary to raise the pressure in the apparatus to a pressure at which vacuum adsorption is possible.
In the present embodiment, means 22 for introducing gas is provided in this apparatus, and the pressure inside the apparatus can be raised to a pressure at which vacuum adsorption can be performed, and the held object 1 can be vacuum adsorbed. When increasing the pressure in the processing chamber, for example, a pressure of 1.0 atm or less such as 0.5 atm may be used as long as it can be vacuum-adsorbed.
The gas introduced at this time is preferably an inert gas such as He or N 2 .
【００２８】[0028]
【発明の効果】本発明によれば、静電吸着装置上でウエ
ハが確実に保持されたか否か、また、平坦化されたか否
かモニタすることができる。また、膜の材質，膜厚に応
じて比較できるため、各種ウエハが理想的に吸着してい
る場合と比較して、どの程度の吸着力が作用しているか
のモニタにもなり、確実なウエハ上への処理を行うため
の試料保持装置の保持状態確認方法を提供することがで
きる。According to the present invention, it is possible to monitor whether or not the wafer is securely held on the electrostatic attraction device and whether or not the wafer is flattened. In addition, since it is possible to compare according to the material and film thickness of the film, it becomes possible to monitor how much adsorption force is exerted compared to the case where various wafers are ideally adsorbed, and a reliable wafer can be obtained. It is possible to provide a method for confirming the holding state of the sample holding device for performing the upward processing.
【図１】本発明の第一の実施例を示すブロック図。FIG. 1 is a block diagram showing a first embodiment of the present invention.
【図２】図１の吸着面の平面図。FIG. 2 is a plan view of the suction surface of FIG.
【図３】本発明の第一の実施例の第一例のブロック図。FIG. 3 is a block diagram of a first example of the first embodiment of the present invention.
【図４】静電吸着装置の回路に流れる電流波形図。FIG. 4 is a waveform diagram of a current flowing through a circuit of the electrostatic attraction device.
【図５】本発明の第一の実施例の第二例のブロック図。FIG. 5 is a block diagram of a second example of the first embodiment of the present invention.
【図６】本発明の第二の実施例を示すブロック図。FIG. 6 is a block diagram showing a second embodiment of the present invention.
１…ウエハ、２…誘電体、３…電極板、４…導通部、５
…絶縁体、６…吸着確認パラメータ検出手段、７…電
源、８…真空吸着手段、９…真空吸着部、１０…ばね、
１１…メモリ、１２…比較回路。1 ... Wafer, 2 ... Dielectric, 3 ... Electrode plate, 4 ... Conductive part, 5
... Insulator, 6 ... Adsorption confirmation parameter detecting means, 7 ... Power supply, 8 ... Vacuum adsorption means, 9 ... Vacuum adsorption part, 10 ... Spring,
11 ... Memory, 12 ... Comparison circuit.
Claims (1)
電極板と被保持物体間に電位差を生じさせることによっ
て誘電体に被保持物体を吸着させる静電吸着装置におい
て、前記静電吸着装置に、真空吸着する手段、静電吸着
の際に変化する電気的、または物理的特性値の検出手段
を設け、真空吸着と静電吸着を同時に動作させた場合に
示す、電気的、または物理的特性値の変化の値を、前記
静電吸着装置の動作時の吸着状態確認手段とすることを
特徴とする静電吸着装置。1. An electrostatic attraction device comprising an electrode plate and a dielectric material laminated on each other, wherein an electrostatic attraction device attracts the held object to the dielectric material by generating a potential difference between the electrode plate and the held object. The suction device is provided with a means for vacuum suction, a means for detecting an electrical or physical characteristic value that changes during electrostatic suction, and is shown when the vacuum suction and the electrostatic suction are operated at the same time. An electrostatic chucking device, wherein a value of a change in a physical characteristic value is used as a chucking state confirmation means during operation of the electrostatic chucking device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4855294A JPH07263529A (en) | 1994-03-18 | 1994-03-18 | Electrostatic attraction apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4855294A JPH07263529A (en) | 1994-03-18 | 1994-03-18 | Electrostatic attraction apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07263529A true JPH07263529A (en) | 1995-10-13 |
Family
ID=12806544
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4855294A Pending JPH07263529A (en) | 1994-03-18 | 1994-03-18 | Electrostatic attraction apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07263529A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20020042483A (en) * | 2000-11-30 | 2002-06-05 | 아끼구사 나오유끼 | Apparatus for manufacturing bonded substrate |
| KR100469353B1 (en) * | 2002-02-06 | 2005-02-02 | 엘지.필립스 엘시디 주식회사 | bonding device for liquid crystal display |
| KR100769188B1 (en) * | 2002-03-20 | 2007-10-23 | 엘지.필립스 엘시디 주식회사 | Stage of bonding device |
| DE102006024946B4 (en) * | 2005-12-29 | 2011-05-19 | Lg Display Co., Ltd. | Substrate bonding device for a liquid crystal display panel |
| JP2016508292A (en) * | 2012-12-28 | 2016-03-17 | アクセリス テクノロジーズ， インコーポレイテッド | Charge integration based on electrostatic clamp condition monitoring |
-
1994
- 1994-03-18 JP JP4855294A patent/JPH07263529A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20020042483A (en) * | 2000-11-30 | 2002-06-05 | 아끼구사 나오유끼 | Apparatus for manufacturing bonded substrate |
| KR100469353B1 (en) * | 2002-02-06 | 2005-02-02 | 엘지.필립스 엘시디 주식회사 | bonding device for liquid crystal display |
| KR100769188B1 (en) * | 2002-03-20 | 2007-10-23 | 엘지.필립스 엘시디 주식회사 | Stage of bonding device |
| DE102006024946B4 (en) * | 2005-12-29 | 2011-05-19 | Lg Display Co., Ltd. | Substrate bonding device for a liquid crystal display panel |
| JP2016508292A (en) * | 2012-12-28 | 2016-03-17 | アクセリス テクノロジーズ， インコーポレイテッド | Charge integration based on electrostatic clamp condition monitoring |
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