JP2002305237A - Method and apparatus for producing semiconductor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method and an apparatus for producing semiconductor, with which the yield of a semiconductor can be improved by detecting the destruction of insulation on the dielectric film of an electrostatic chuck. SOLUTION: An electrostatic chuck device is provided with means 104A, 104B, 105A and 105B for measuring a voltage V to be impressed to electrodes 102A and 102B and a current I to flow on the dielectric film, when attaching an object 101 to be treated. Also, control means 109A and 109B decide a case that a resistance value R found by the voltage V and the current I or the absolute value of the current I is greater than a reference resistance value R0 or the absolute value of a current value I0 or greater than the resistance value R or current value I found the last time, and issues a warning.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing method and apparatus, and more particularly to a semiconductor manufacturing method and apparatus suitable for a semiconductor manufacturing apparatus using an electrostatic chuck.

[0002]

2. Description of the Related Art Conventionally, as a semiconductor manufacturing apparatus for processing a semiconductor wafer, an apparatus utilizing plasma generated by an electromagnetic wave, for example, an etching apparatus or a chemical vapor deposition apparatus has been known. In these apparatuses, an electrostatic chuck is used to attract a wafer to a wafer support.

In general, as a method of extending the life of an electrostatic chuck, for example, as described in JP-A-10-144779, wear on the surface of the electrostatic chuck becomes remarkable, What solves the occurrence of a large amount is known. Further, for example, Japanese Patent Application Laid-Open No. 7-17 / 1995
As described in Japanese Patent Application Laid-Open No. 6602/1994, there is known a device which prevents mechanical cracks from being generated by a temperature cycle repeatedly applied to an electrostatic chuck.

[0004]

Incidentally, in recent years, an electrostatic chuck has been used also in a high-density plasma apparatus for forming an interlayer insulating film by high-density plasma. In high-density plasma, the temperature during the process needs to be maintained at about 400 ° C. in order to maintain good quality of the interlayer insulating film. When the wafer is kept at about 400 ° C., the dielectric film of the electrostatic chuck is about 1
It reaches 00 ° C. It is necessary to keep the dielectric film of the electrostatic chuck at a high temperature of 100 ° C. for a long time, and to supply a current to the dielectric film in order to attract the wafer at that time.

A conventional semiconductor manufacturing apparatus is disclosed in
Although studies have been made on extending the life of the electrostatic chuck from the mechanical side as described in JP-A-144779 and JP-A-7-176602, these mechanical Although the service life of the electrostatic chuck has been prolonged, there is a problem that the effect of improving the service life is small. Therefore, the inventors of the present invention have focused on the electrical life when the electrostatic chuck is kept at a high temperature state, as in a high-density plasma device, and studied. As a result, if a current continues to flow through the dielectric film, the dielectric breakdown will eventually occur. This phenomenon is called Time Dependent Dielectric Breakd
It is called own (TDDB). Generally, the higher the temperature, the sooner the dielectric breakdown occurs. That is, the dielectric film of the electrostatic chuck used in a process in which the wafer needs to be kept at a high temperature, such as a process of forming an interlayer insulating film by high-density plasma, has a high possibility of eventually causing dielectric breakdown.

However, in a conventional semiconductor manufacturing apparatus using an electrostatic chuck, the life of the electrostatic chuck exposed to high temperatures is a problem in mechanical aspects, but the electrical life is extremely short at high temperatures. The life was not an actual problem, and no countermeasures were taken. Therefore, the life of the dielectric film of the electrostatic chuck is detected only indirectly by inspecting the appearance or detecting that the degree of vacuum is reduced.

Conventionally, the temperature of a wafer during plasma processing is generally monitored using a non-contact thermometer through a part of an electrostatic chuck through a fiber.
There is a problem that the state of the back surface of the wafer is not always constant, and the temperature cannot always be measured accurately.

A first object of the present invention is to provide a semiconductor manufacturing method and apparatus capable of detecting dielectric breakdown of a dielectric film of an electrostatic chuck and improving a semiconductor yield.

A second object of the present invention is to provide a semiconductor manufacturing method capable of accurately measuring the temperature of a dielectric film or a wafer.

[0010]

(1) In order to achieve the above object, the present invention provides means for measuring a voltage V applied to an electrode and a current I flowing through a dielectric film when an object to be processed is adsorbed. In the semiconductor manufacturing method performed using a semiconductor manufacturing apparatus having an electrostatic chuck provided, the absolute value of the resistance R or the current I obtained by the voltage V and the current I is:
A warning is issued when the reference resistance value R0 or the current value I0 is equal to or greater than the absolute value, or when the resistance value R or the current value I obtained last time is equal to or greater than the absolute value. According to such a method, the dielectric breakdown of the dielectric film of the electrostatic chuck is detected, and the yield of the semiconductor can be improved.

(2) In the above (1), preferably,
After issuing the above warning, if the object is re-adsorbed and the re-adsorption is performed only a specified number of times, and a warning is issued,
The semiconductor manufacturing using the semiconductor manufacturing is interrupted, and at least a part of the electrostatic chuck is replaced.

(3) In the above (1), preferably,
The object to be processed used for checking the state of the dielectric film of the electrostatic chuck is a dedicated wafer for checking the state of the dielectric film.

(4) In the above (1), preferably,
The above manufacturing method is a process in which an insulating film is deposited on the object to be processed in the semiconductor manufacturing apparatus.

(5) In order to achieve the above object,
The present invention relates to a semiconductor manufacturing method using a semiconductor manufacturing apparatus having an electrostatic chuck provided with means for measuring a voltage V applied to an electrode and a current I flowing through a dielectric film when an object to be processed is adsorbed. The temperature of the object or the dielectric film is measured from the relationship between the temperature of the object or the dielectric film and the current I which have been checked and the current I when the object is adsorbed. It was done. With this method, the temperature of the dielectric film or the wafer can be accurately measured.

(6) In the above (5), preferably,
The object to be processed is processed by using the measured temperature.

(7) In order to achieve the above object, the present invention provides an electrostatic chuck having means for measuring a voltage V applied to an electrode and a current I flowing through a dielectric film when an object to be processed is adsorbed. In the semiconductor manufacturing method performed using the semiconductor manufacturing apparatus having the above, the electrostatic chuck is two electrodes,
A means for measuring the voltage V applied to the two electrodes and the current I flowing through the dielectric film are provided, and the current flowing through one electrode is applied to one or both electrodes so as to be equal to the current flowing through the other electrode. That is, the voltage to be adjusted is adjusted. According to such a method, the dielectric breakdown of the dielectric film of the electrostatic chuck is detected, and the yield of the semiconductor can be improved.

(8) In the above (7), preferably,
If the difference between the two voltages after the voltage adjustment exceeds a predetermined allowable range, a warning is issued.

(9) In order to achieve the above object, the present invention provides an electrostatic chuck provided with means for measuring a voltage V applied to an electrode and a current I flowing through a dielectric film when an object to be processed is adsorbed. The absolute value of the resistance value R or the current value I obtained by the voltage V and the current I is equal to or greater than the absolute value of the reference resistance value R0 or the current value I0. It is determined whether the resistance value is equal to or more than the absolute value of the resistance value R or the current value I,
This is provided with a control means for issuing a warning.
With such a configuration, the dielectric breakdown of the dielectric film of the electrostatic chuck is detected, and the yield of semiconductors can be improved.

(10) In order to achieve the above object, the present invention provides a method for applying a voltage V applied to an electrode when an object to be treated is adsorbed.
And a semiconductor manufacturing apparatus having an electrostatic chuck provided with means for measuring a current I flowing through the dielectric film, the electrostatic chuck includes two electrodes, and a voltage V applied to the two electrodes and a current flowing through the dielectric film. A means for measuring the current I, and a control means for adjusting the voltage applied to one or both electrodes so that the current flowing through one electrode is equal to the current flowing through the other electrode. is there. With such a configuration, the dielectric breakdown of the dielectric film of the electrostatic chuck is detected, and the yield of semiconductors can be improved.

[0020]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The structure and operation of an electrostatic chuck device as a semiconductor manufacturing apparatus according to a first embodiment of the present invention will be described below with reference to FIGS. First, the configuration of the semiconductor manufacturing apparatus according to the present embodiment will be explained with reference to FIG. FIG. 1 is a block diagram showing a configuration of the semiconductor manufacturing apparatus according to the first embodiment of the present invention.

The electrostatic chuck device according to the present embodiment is used as a part of a semiconductor manufacturing apparatus for depositing an insulating film using plasma. Two electrodes 102 are provided inside the dielectric film 103 of the electrostatic chuck that holds the wafer 101 by suction.
A and 102B are embedded. The electrode 102A has
A positive voltage VA for suction is applied from the power supply 108A.
Further, a negative voltage VB for suction is applied to the electrode 102B from the power supply 108B. The voltages VA and VB are different depending on the semiconductor manufacturing apparatus used. In the plasma apparatus, for example, +500 V and −500, respectively.
500 V is applied.

The high frequency power source 10 is connected to the electrode 102A.
7 and the capacitor 106A apply a bias voltage to the wafer 101. The high frequency power supply 1 is
07 and a capacitor 106B, a bias voltage is applied to the wafer 101.

Further, in this embodiment, the power supply 10
A voltmeter 104A for measuring a voltage of 8A and an electrode 102A
And an ammeter 105A for measuring a current flowing through the power supply. Voltage VA measured by voltmeter 104A and current IA measured by ammeter 105A are input to control means 109A. Similarly, the power supply 108B
And an ammeter 105B for measuring a current flowing through the electrode 102B. The voltage VB measured by the voltmeter 104B and the ammeter 1
The current IB measured by the control unit 109
Input to B. The control means 109A controls the dielectric film 1 based on the voltage VA and the current IA as described later with reference to FIG.
03 and the control means 109B
If the dielectric breakdown of the dielectric film 103 is considered to be dielectric breakdown based on the determination result based on the voltage VB and the current IB, the alarm 110A is used.
By giving an alarm, replacement of the dielectric film 103 is prompted.

When an insulating film is deposited on the wafer 101 in the present apparatus, the wafer 101 is placed on the dielectric film 1 of the electrostatic chuck.
03. By applying an appropriate voltage to the power supply 108, the wafer 101 is attracted to the electrostatic chuck. The wafer 101 is subjected to plasma processing while being attracted to the electrostatic chuck, and an insulating film is deposited on the wafer 101 when the semiconductor manufacturing apparatus is a high-density apparatus. When the necessary processing is completed, the application of the voltage to the electrodes 102A and 102B is stopped, and the wafer 101 is transferred to a predetermined place.

Next, the operation of the semiconductor manufacturing apparatus according to the present embodiment will be explained with reference to FIG. FIG. 2 is a flowchart illustrating the operation of the semiconductor manufacturing apparatus according to the first embodiment of the present invention.

In step s10, the control device 109
A and 109B reset the number of determinations n by setting the number of determinations n = 0.

Next, in step s15, the control devices 109A and 109B each add 1 to the number of determinations n.

Next, in step s20, the wafer 1
01 is placed on the dielectric film 103.

Next, in step s25, the control devices 109A and 109B respectively control the power sources 108A and 108A.
Voltages VA and VB are applied to the electrodes 102A and 102B from 8B to attract the wafer 101 to the dielectric film 103.

Next, in step s30, the control devices 109A and 109B respectively operate the voltmeters 104A and 104A.
The voltages VA and VB applied when the wafer 101 is sucked and the currents IA and IB flowing at that time are measured by using an electric field meter 04A and ammeters 105A and 105B, respectively.

Here, in the semiconductor manufacturing apparatus according to the present embodiment, when the dielectric film 103 of the electrostatic chuck and others are normal, the voltages VA0 and VB0 applied to attract the wafer 101 and the current flowing at that time. IA0 and IB0 are measured by voltmeters 104A and 104B,
It measures beforehand using the ammeters 105A and 105B. This operation is performed several times, and the standard applied voltages VA0, VA0,
VB0 and the standard currents IA0, I
Check B0. In particular, regarding the current, in addition to the standard values IA0 and IB0, the values are allowed when the voltages VA0 and VB0 are applied in consideration of a value allowed in semiconductor manufacturing or a margin for determining dielectric breakdown. Currents IAC (VA0) and IBC (VB0) are determined. Alternatively, according to the following equations (1) and (2), RAC = | VA0 ÷ IAC (VA0) | (1) RBC = | VB0 ÷ IBC (VB0) | (2) Ask for.

Next, in step s35, the control devices 109A and 109B use the voltages VA and VB applied in sucking the wafer 101 and the currents IA and IB flowing at that time, respectively, measured in step s30. From the following equations (3) and (4), the resistances RA and R
Find B. RA = | VA ÷ IA | (3) RB = | VB ÷ IB | (4) Next, in step s40, the control devices 109A, 1
09B respectively converts the resistance values RA and RB determined in step s35 into the previously determined resistance values RAC and RB.
Compare with RBC.

Next, in step s45, the control devices 109A and 109B determine whether or not the following expression (5) is satisfied. RA> RAC and RB> RBC (5) When the control device 109B satisfies RB> RBC,
This is notified to the control device 109A, and the control device 109A is notified.
A indicates that if RA> RAC is satisfied, the control device 109
Based on the notification from B, it is determined that Expression (5) is satisfied.

If the result of the determination in step s45 satisfies the equation (5), in step s50, the control device 109A assumes that the dielectric film 103 has not been subjected to dielectric breakdown and continues the plasma processing as it is.

However, if the result of the determination in step s45 does not satisfy expression (5), that is, if the following expression (6) is satisfied, in step s55, the control device 109A causes the dielectric film 103 to break down the dielectric film 103. It is assumed that the alarm is performed, and an alarm is issued using the alarm 109A.

RA ≦ RAC or RB ≦ RBC (6) The way of alarm by the alarm 109A is to sound a buzzer, blink a lamp, and indicate on a monitor that the leak current is larger than an allowable value. Any of these may be used.

Next, in step s60, the control devices 109A and 109B respectively control the electrodes 102A and 102A.
The voltages VA and VB applied to 2B are set to 0. This is because there is a possibility that the dielectric breakdown of the dielectric film 103 occurs only locally.

Next, in step s65, the control devices 109A and 109B separate the wafer 101 from the dielectric film 103 and transport the wafer 101 to a predetermined location by a wafer transport device in some cases.

Next, in step s70, the control devices 109A and 109B determine whether or not the number of determinations n is smaller than a predetermined number of determinations nC (for example, three). If the predetermined number of determinations is equal to or less than nC times, in step s15, 1 is added to the number of determinations n, and then the processing of steps s20 to s65 is repeated. When the number of determinations n exceeds the predetermined number of determinations nC, in steps s75, the control devices 109A and 109B stop the semiconductor manufacturing apparatus and replace the entire electrostatic chuck device or a part of the dielectric film 103 thereof.

That is, if the equation (5) is satisfied while the judgment processing using the resistance values RA and RB is repeated a predetermined number of times nC, the plasma processing is continued. Is stopped, and the whole or a part of the dielectric film 103 of the electrostatic chuck device is replaced.

Here, the processing shown in FIG. 2 has been described for all the wafers 101 transferred to the present semiconductor manufacturing apparatus, but the wafer 101 is previously placed in a dummy cassette provided in the present semiconductor manufacturing apparatus. The processing shown in FIG. 2 may be performed only on the dedicated wafer. The dedicated wafer referred to here is not a normal semiconductor processing target wafer on which an insulator is deposited or a semiconductor element is formed, but is not subjected to semiconductor processing for checking a dielectric breakdown state of the dielectric film 103. It is a dummy wafer.

When the resistance values RA and RB obtained by the equations (3) and (4) decrease as a plurality of wafers are processed, it is not considered that the dielectric film 103 has been broken down. Even if the semiconductor manufacturing equipment is stopped,
The dielectric film 103 of the whole or a part of the electrostatic chuck device
It is also possible to exchange. Normally, in a semiconductor manufacturing apparatus, it is necessary to periodically or irregularly open the reaction furnace to the atmosphere and wash the wall with an organic solvent such as acetone. At this time, if the whole or a part of the dielectric film 103 of the electrostatic chuck device is replaced, the operation rate of the device is not reduced unnecessarily, and a semiconductor device with a low yield is not manufactured. It is.

Further, in this embodiment, as shown in step s40, the presence or absence of dielectric breakdown of the dielectric film is detected using the resistance values RA and RB. However, when the voltages VA and VB are constant, By using the currents IA and IB, the presence or absence of dielectric breakdown of the dielectric film can be detected. For example, in a high-density plasma device, voltages VA and VB are, for example, 500 V, −
When the voltage is constant at 500 V, the currents IA0 and IB0 serving as references for a normal dielectric film are measured in advance, and the allowable currents IAC, By comparing IBC with the actual currents IA and IB, it is possible to determine the presence or absence of dielectric breakdown of the dielectric film of the electrostatic chuck.

Also, dielectric breakdown of the dielectric film occurs rapidly,
When insulation breakdown occurs, the resistance value changes suddenly. Therefore, each time the resistances RA and RB are measured, the presence or absence of dielectric breakdown of the dielectric film can be detected by comparing the measured values with RA and RB at the time of the previous measurement.

The semiconductor manufacturing method according to the present embodiment is effective for all processes using an electrostatic chuck, but is particularly effective for processes having a high wafer temperature.

As will be described later, the resistance value of the dielectric film 103 has temperature dependence. Therefore, step s3
0, the temperature of the dielectric film 103 when measuring the voltages VA and VB and the currents IA and IB is equal to the standard voltages VA0 and VA0.
Dielectric film 1 for measuring VB0 and currents IA0, IB0
It is necessary to set the same conditions as the temperature of 03. For this purpose, for example, as always shown in step s20, measurement is performed at the same timing, such as measurement immediately after the wafer 101 is mounted on the dielectric film 103, so that measurement can be performed under the same temperature conditions. it can.

As described above, according to the present embodiment, the dielectric breakdown of the dielectric film of the electrostatic chuck is detected, and the dielectric film can be replaced at the time of the dielectric breakdown, so that the yield of semiconductors can be improved.

Next, a method of manufacturing a semiconductor using an electrostatic chuck device which is a semiconductor manufacturing device according to a second embodiment of the present invention will be described with reference to FIGS. In addition,
The overall configuration of the semiconductor manufacturing apparatus according to the present embodiment is the same as that shown in FIG. Conventionally, the temperature of a wafer during plasma processing is generally monitored using a non-contact thermometer through a fiber through a part of an electrostatic chuck, but the state of the back surface of the wafer is not always constant,
The temperature could not always be measured accurately.
In the present embodiment, in an apparatus that performs processing in a state where the temperature of the wafer 101 is high, the temperature of the wafer 101 or the dielectric film 103 is generally measured using the fact that the resistivity of the dielectric film is a function of the temperature. It is to be.

When the wafer 101 is sucked, the voltmeter 10
Voltages VA and VB are measured using 4A and 104B, and currents IA and IB are measured using ammeters 105A and 105B. Immediately after the wafer 101 is sucked, the wafer 10
The temperature of 1 is close to room temperature (t = Tstart). However, the temperature of the wafer 101 rises to, for example, 400 ° C. after a certain period of time due to heat from a heating device embedded in the dielectric film 103, plasma, or another heat source. At this time, even if the constant voltages VA and VB are applied, the current I
A and IB are not constant. This is because the temperature of the dielectric film 103 changes with time, and the resistivity of the dielectric film 103 changes with temperature. When the dielectric film 103 is made of, for example, Kyocera's alumina A-445, the resistivity is about 1 at 25 ° C. and 100 ° C.
0 times different (http://www.kyocera.co.jp/frame/product
/ceramics/e-ceramics/material/pdfs/material.pd
f). Therefore, IA and IB also change according to the temperature. The control devices 109A and 109B output the constant voltages VA and V
By monitoring the currents IA and IB when B is applied, the temperature of the dielectric film 103 can be measured from the relationship obtained by calibration in advance. Also, the dielectric film 1
Since the temperature of 03 is closely related to the temperature of the wafer 101, the temperature of the wafer 101 can be detected from the temperature of the dielectric film 103.

Here, referring to FIG. 3, in the semiconductor manufacturing apparatus according to the present embodiment, the timing of applying the voltages VA and VB for attracting the wafer 101, the timing of the wafer 101
For applying energy for heating the wafer and the current IA, IB or the temperature T of the wafer 101 at that time.
Will be described.

FIG. 3 is a timing chart showing changes in voltages VA and VB, heating energy, currents IA and IB, and temperature T in the semiconductor manufacturing apparatus according to the second embodiment of the present invention.

After the wafer 101 is transferred onto the electrostatic chuck, as shown in FIG. 3B, at time t1, the wafer 101 is attracted by applying the voltages VA and VB to the power supplies 108A and 108B.

When the voltages VA and VB are applied, FIG.
As shown in (C), the currents IA and IB increase.

Thereafter, in order to raise the temperature of the wafer 101 to a desired temperature, as shown in FIG. 3A, heating energy is supplied at time t2. This heating energy is obtained by applying a bias voltage to the wafer 101 from the high-frequency power supply 107 and the capacitors 106A and 106B, applying energy to a heater embedded in the electrostatic chuck device, or applying energy to plasma. In, is added.

By the heating energy, the temperature T of the wafer 101 rises as shown in FIG. When the temperature of the wafer 101 rises, the dielectric film 10 of the electrostatic chuck
3 also rises and its resistivity decreases, resulting in an increase in currents IA and IB as shown in FIG. 3 (C). When the temperature of the wafer 101 becomes constant as shown in FIG. 3D, the currents IA and IB also become constant as shown in FIG. When the temperature T of the wafer 101 becomes constant, predetermined plasma processing is performed.

When the processing is completed, as shown in FIG. 3A, at time t3, the supply of the heating energy of the wafer 101 is stopped. By stopping the input of heating energy,
As shown in FIG. 3D, the temperature of the wafer 101 decreases. Accordingly, as shown in FIG. 3C, the current IA,
IB drops.

As described above, the voltages VA and VB and the current I
The temperature of the wafer can be determined from the relationship between A and IB.

When the temperature of the wafer 101 decreases, the application of the voltages VA and VB is stopped at time t4, as shown in FIG. 3B, in order to carry out the wafer 101. This makes it possible to carry out the wafer from the electrostatic chuck.

Next, the sequence in the semiconductor manufacturing method according to the present embodiment will be explained with reference to FIG. FIG. 4 is a sequence diagram showing the steps of the semiconductor manufacturing method according to the second embodiment of the present invention.

Conventionally, time is used to determine whether the temperature of the wafer 101 has reached a certain temperature. This time is obtained by repeating the experiment, but is usually determined with a sufficient margin.
Moreover, when the conditions such as the type of gas and the plasma change, it is necessary to reset the necessary time each time. Further, in the measurement of the wafer temperature using the radiation thermometer, it is difficult to accurately measure the temperature of the wafer 101 because the state of the wafer 101, particularly, the reflectance is not always constant.

On the other hand, in the present embodiment, the throughput can be improved by measuring the temperature. FIG. 4 shows a process flow for depositing an insulator. In this process, the wafer 101 is about 40
It needs to be 0 ° C. By the method described above, the wafer 1
01 is detected to be 400 ° C., and the time T1 is detected.
In 1, the interlayer insulating film can be formed by introducing a monosilane gas or the like. This eliminates the need for extra waiting time.

When the temperature of the wafer 101 needs to be approximately 25 ° C. to transfer the wafer 101, the time T2 at which the wafer 101 reaches 25 ° C. can be determined by the present method. In addition, the wafer 101 can be transferred.

As described above, according to the present invention, the temperature information can be obtained from the control device by using the voltage and current detected by the voltmeter and the ammeter attached to the electrostatic chuck device. Can be used to improve the throughput.

In the above description, the process of depositing an insulating film at a temperature of about 400 ° C. is taken as an example. However, when the processing temperature of the wafer 101 is lower than room temperature, or when the temperature of the wafer 101 is It is needless to say that the present invention is effective even in the case of change.

Next, the configuration and operation of the electrostatic chuck device, which is a semiconductor manufacturing device according to the third embodiment of the present invention, will be described with reference to FIG. FIG. 5 is a block diagram showing the configuration of the semiconductor manufacturing apparatus according to the third embodiment of the present invention. The same reference numerals as those in FIG. 1 indicate the same parts.

In this embodiment, the control device 109
A 'and 109B' are power supplies 108A and 108A, respectively.
The voltage output from B can be variably controlled. The ammeters 105A, 10B
Currents IA and IB detected by 5B are input. The control devices 109A and 109B output the currents IA and IB
And the power supplies 108A, 1
08B is controlled.

As described above, by adjusting the voltage VA or VB so that the currents IA and IB are equal, it is possible to prevent the semiconductor manufacturing apparatus formed on the wafer from being electrically damaged. For example, the properties of the dielectric film vary depending on the position,
If the same voltage is applied to the voltages VA and VB when the area of A and the electrode 102B varies, the currents IA and IB
May be different. At this time, this difference is
It should have been supplied or released. In particular, when plasma exists above the wafer 101, a current path can be easily formed between the wafer 101 and the plasma. As described above, the current flowing from the plasma into the wafer 101 or the current in the opposite direction flows through the gate oxide film formed on the wafer 101, and may cause dielectric breakdown of the gate oxide film. In contrast, as in the present embodiment, the current I1 flowing through the dielectric film of the electrostatic chuck is
When I2 and I2 are made equal, the current flowing into the wafer 101 from the plasma or the current in the opposite direction can be made as small as possible, and the dielectric breakdown of the gate oxide film can be suppressed to the minimum.

Further, by adjusting the voltages VA and VB,
It can be determined whether or not the electrostatic chuck is normal, and by using this, it is possible to suppress a decrease in yield. For example, when the voltage VB is kept at its standard value VB0 to make the currents IA and IB equal, and the voltage VA is changed,
If the difference between the adjusted voltage VA and the standard voltage VA0 is larger than a predetermined value, a warning is issued. When the electrostatic chuck is normal, the voltages VA and VB are set to 300
If V is set, it is assumed that the currents IA and IB are equal. It is also assumed that the allowable value of the difference between voltage VA and VA0 is set to 50V. For some reason, the voltage VB is 300V,
When the currents IA and IB are equal when the voltage VA is 100 V, the difference between the voltages VA and VA0, that is, 200 V exceeds the preset allowable value 50 V.
A warning such as sounding a buzzer or blinking a lamp, or indicating on a monitor that the difference between the adjusted voltage VA and the standard value VA0 is beyond the threshold is issued. After that, the suction of the wafer 101 is stopped, the wafer 101 is separated from the electrostatic chuck, and in some cases, is transferred to a predetermined place by a wafer transfer device. Thereafter, the wafer 101 is placed on the dielectric film 103, a voltage is applied to the electrodes 102 to attract the wafer 101, and the voltage VA is adjusted again so that the current IA becomes equal to the current IB. Even if such an operation is repeated a predetermined number of times, if the difference between the voltages VA and VA0 is larger than an allowable value, it is determined that an abnormality has occurred in the electrostatic chuck, the semiconductor manufacturing apparatus is stopped, and the electrostatic chuck is stopped. The whole or a part of the chuck device is replaced with the dielectric film 103.

By doing so, in the present embodiment, without lowering the yield of semiconductor devices,
Can be manufactured.

[0070]

According to the present invention, dielectric breakdown of the dielectric film of the electrostatic chuck can be detected, and the yield of semiconductors can be improved.

According to the present invention, the temperature of the dielectric film or the wafer can be accurately measured.

[Brief description of the drawings]

FIG. 1 is a block diagram showing a configuration of a semiconductor manufacturing apparatus according to a first embodiment of the present invention.

FIG. 2 is a flowchart illustrating an operation of the semiconductor manufacturing apparatus according to the first embodiment of the present invention.

FIG. 3 shows voltages VA, VB, heating energy, current IA, and the like in the semiconductor manufacturing apparatus according to the second embodiment of the present invention.
6 is a timing chart showing changes in IB and temperature T.

FIG. 4 is a sequence diagram showing steps of a semiconductor manufacturing method according to a second embodiment of the present invention.

FIG. 5 is a block diagram illustrating a configuration of a semiconductor manufacturing apparatus according to a third embodiment of the present invention.

[Explanation of symbols]

 101: Wafer 102A, 102B: Electrode 103: Dielectric film 104A, 104B: Voltmeter 105A, 105B: Ammeter 106A, 106B: Capacitor 107: High-frequency power supply 108A, 108B: Power supply 109A, B: Control device 110A: Alarm

 ──────────────────────────────────────────────────続 き Continuing from the front page (72) Inventor Sadayuki Okuhira 6-16-16 Shinmachi, Ome-shi, Tokyo 2 Inside the Device Development Center, Hitachi, Ltd. (72) Inventor Kazunori Omori 6-16 Shinmachi, Ome-shi, Tokyo In the Hitachi, Ltd. Device Development Center Co., Ltd. (72) Inventor Tsuyoshi Tamaru 6-16, Shinmachi, Ome-shi, Tokyo F-term in the Hitachi, Ltd. Device Development Center Co., Ltd. F-term (reference) 5F004 AA16 BB22 CA04 CB05 5F031 CA02 CA11 HA16 JA01 JA45 JA51 PA08 5F045 AA03 AB32 AC01 BB20 EM05 GB12

Claims (10)

[Claims] 1. A semiconductor manufacturing method using a semiconductor manufacturing apparatus having an electrostatic chuck provided with means for measuring a voltage V applied to an electrode and a current I flowing through a dielectric film when adsorbing an object to be processed, When the absolute value of the resistance R or the current I obtained by the voltage V and the current I is greater than or equal to the absolute value of the reference resistance R0 or the current I0, or the resistance R or the current obtained last time A method for producing a semiconductor, comprising issuing a warning when the absolute value of I is equal to or greater than the absolute value. 2. The semiconductor manufacturing method according to claim 1, wherein after issuing the warning, the object to be processed is sucked again and a warning is issued even if re-suction is performed a predetermined number of times.
A method of manufacturing a semiconductor device, comprising interrupting semiconductor manufacturing using semiconductor manufacturing and replacing at least a part of an electrostatic chuck. 3. The semiconductor manufacturing method according to claim 1, wherein the object to be used for checking the state of the dielectric film of the electrostatic chuck is a dedicated wafer for checking the state of the dielectric film. Semiconductor manufacturing method. 4. The semiconductor manufacturing method according to claim 1, wherein said manufacturing method is a process of depositing an insulating film on said workpiece in said semiconductor manufacturing apparatus. 5. A semiconductor manufacturing method using a semiconductor manufacturing apparatus having an electrostatic chuck provided with means for measuring a voltage V applied to an electrode and a current I flowing through a dielectric film when adsorbing an object to be processed, Measuring the temperature of the object or the dielectric film from the relationship between the temperature of the object or the dielectric film and the current I previously checked and the current I when the object is adsorbed. A semiconductor manufacturing method characterized by the above-mentioned. 6. The semiconductor manufacturing method according to claim 5, wherein the object is processed using a measured temperature. 7. A semiconductor manufacturing method performed by using a semiconductor manufacturing apparatus having an electrostatic chuck provided with means for measuring a voltage V applied to an electrode and a current I flowing through a dielectric film when an object to be processed is adsorbed, The electrostatic chuck includes two electrodes, and includes means for measuring a voltage V applied to the two electrodes and a current I flowing through the dielectric film, respectively. The current flowing through one electrode is compared with the current flowing through the other electrode. A method of manufacturing a semiconductor device, comprising adjusting a voltage applied to one or both electrodes so that the electrodes become equal. 8. The semiconductor manufacturing method according to claim 7, wherein a warning is issued when a difference between the two voltages after the voltage adjustment exceeds a preset allowable range. 9. A semiconductor manufacturing apparatus having an electrostatic chuck provided with means for measuring a voltage V applied to an electrode and a current I flowing through a dielectric film when an object to be processed is adsorbed, wherein the voltage V and the current I When the calculated absolute value of the resistance value R or the current value I is equal to or more than the absolute value of the reference resistance value R0 or the current value I0, or equal to or more than the absolute value of the previously calculated resistance value R or the current value I. A semiconductor manufacturing method, comprising: a control unit that determines a case and issues a warning. 10. A semiconductor manufacturing apparatus having an electrostatic chuck provided with means for measuring a voltage V applied to an electrode and a current I flowing through a dielectric film when an object to be processed is adsorbed, wherein the electrostatic chuck is Means for measuring the voltage V applied to the two electrodes and the current I flowing through the dielectric film, respectively, so that the current flowing through one electrode is equal to the current flowing through the other electrode. A semiconductor manufacturing apparatus comprising: a control unit that adjusts a voltage applied to both electrodes.