CN110777332B - Electrostatic chuck system, film forming apparatus and method, suction method, and method for manufacturing electronic device - Google Patents

Electrostatic chuck system, film forming apparatus and method, suction method, and method for manufacturing electronic device Download PDF

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Publication number
CN110777332B
CN110777332B CN201910278040.5A CN201910278040A CN110777332B CN 110777332 B CN110777332 B CN 110777332B CN 201910278040 A CN201910278040 A CN 201910278040A CN 110777332 B CN110777332 B CN 110777332B
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magnetic force
electrostatic chuck
mask
substrate
potential difference
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CN110777332A (en
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柏仓一史
石井博
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Canon Tokki Corp
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Canon Tokki Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833Details of electrostatic chucks
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23QDETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/15Devices for holding work using magnetic or electric force acting directly on the work
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/042Coating on selected surface areas, e.g. using masks using masks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12Organic material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50Substrate holders
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/02631Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02NELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The invention provides an electrostatic chuck system, a film forming apparatus and method, a suction method, and a method for manufacturing an electronic device. The electrostatic chuck system is used for adsorbing the adsorbate, and is characterized by comprising: an electrostatic chuck having an electrode portion and an adsorption surface for adsorbing the adsorbate; a potential difference applying unit that applies a potential difference to the electrode unit; a magnetic force generating unit disposed on the opposite side of the suction surface of the electrostatic chuck; and a driving mechanism for moving the magnetic force generating unit in a direction including a 1 st direction parallel to the suction surface of the electrostatic chuck.

Description

Electrostatic chuck system, film forming apparatus and method, suction method, and method for manufacturing electronic device
Technical Field
The invention relates to an electrostatic chuck system, a film forming apparatus and method, a suction method, and a method of manufacturing an electronic device.
Background
In the production of an organic EL display device (organic EL display), when an organic light emitting element (organic EL element; OLED) constituting the organic EL display device is formed, an organic layer or a metal layer is formed by depositing a deposition material evaporated from a deposition source of a film forming device onto a substrate through a mask on which a pixel pattern is formed.
In a film forming apparatus of an upward vapor deposition method (upward deposition), a vapor deposition source is provided at a lower portion of a vacuum vessel of the film forming apparatus, and a substrate is disposed at an upper portion of the vacuum vessel and vapor deposited on a lower surface of the substrate. In the vacuum chamber of such an upward vapor deposition film forming apparatus, only the peripheral portion of the lower surface of the substrate is held by the substrate holder, and therefore, the substrate is deflected by its own weight, which is one of the factors that deteriorate vapor deposition accuracy. In film forming apparatuses other than the vapor deposition method, there is a possibility that deflection occurs due to the weight of the substrate.
As a method for reducing deflection due to the self weight of the substrate, a technique using an electrostatic chuck is being studied. That is, by sucking the entire upper surface of the substrate with the electrostatic chuck, the deflection of the substrate can be reduced.
In patent document 1 (korean patent laid-open publication No. 2007-0010723), a technique of adsorbing a substrate and a mask by an electrostatic chuck is proposed.
Patent document 1: korean patent laid-open publication No. 2007-0010723
However, in the prior art, when a mask is sucked by an electrostatic chuck via a substrate, there is a problem in that wrinkles remain on the sucked mask.
Disclosure of Invention
The purpose of the present invention is to satisfactorily adhere both a 1 st adsorbate and a 2 nd adsorbate to an electrostatic chuck.
Means for solving the problems
An electrostatic chuck system according to claim 1 of the present invention is an electrostatic chuck system for adsorbing a target, comprising: an electrostatic chuck having an electrode portion and an adsorption surface for adsorbing the adsorbate; a potential difference applying unit that applies a potential difference to the electrode unit; a magnetic force generating unit disposed on the opposite side of the suction surface of the electrostatic chuck; and a driving mechanism for moving the magnetic force generating unit in a direction including a 1 st direction parallel to the suction surface of the electrostatic chuck.
The film forming apparatus according to claim 2 of the present invention is a film forming apparatus for forming a film on a substrate via a mask, wherein the film forming apparatus includes an electrostatic chuck system for adsorbing the substrate as a 1 st adsorbate and the mask as a 2 nd adsorbate, and the electrostatic chuck system is the electrostatic chuck system according to claim 1 of the present invention.
An adsorption method according to claim 3 of the present invention is a method for adsorbing an adsorbate, comprising: a 1 st adsorption stage for applying a 1 st potential difference to the electrode portion of the electrostatic chuck to adsorb the 1 st adsorbate; a suction step of sucking at least a part of the 2 nd adsorbate by a magnetic force from the magnetic force generating unit through the 1 st adsorbate; and a 2 nd adsorption step of moving the magnetic force generating unit in a direction including a direction parallel to an adsorption surface of the electrostatic chuck while applying a 2 nd potential difference equal to or different from the 1 st potential difference to the electrode unit, thereby adsorbing the 2 nd adsorbate to the electrostatic chuck through the 1 st adsorbate.
A film forming method according to claim 4 of the present invention is a film forming method for forming a vapor deposition material on a substrate through a mask, comprising: a step of loading a mask into the vacuum container; a step of loading a substrate into the vacuum container; a 1 st adsorption stage for applying a 1 st potential difference to the electrode portion of the electrostatic chuck to adsorb the substrate to the electrostatic chuck; a suction step of sucking at least a part of the mask with a magnetic force from a magnetic force generating unit through the substrate; a 2 nd adsorption step of moving the magnetic force generating unit in a direction including a direction parallel to an adsorption surface of the electrostatic chuck while applying a 2 nd potential difference equal to or different from the 1 st potential difference to the electrode unit, thereby adsorbing the mask to the electrostatic chuck via the substrate; and a step of evaporating a vapor deposition material while the substrate and the mask are adsorbed to the electrostatic chuck, and forming a film of the vapor deposition material on the substrate through the mask.
The method for manufacturing an electronic device according to claim 5 of the present invention is characterized in that the electronic device is manufactured by using the film forming method according to claim 4 of the present invention.
ADVANTAGEOUS EFFECTS OF INVENTION
According to the present invention, both the 1 st adsorbate and the 2 nd adsorbate can be favorably adsorbed by the electrostatic chuck without leaving wrinkles.
Drawings
Fig. 1 is a schematic view of a portion of a manufacturing apparatus for an electronic device.
Fig. 2 is a schematic view of a film forming apparatus according to an embodiment of the present invention.
Fig. 3a to 3d are conceptual and schematic views of an electrostatic chuck system according to an embodiment of the present invention.
Fig. 4a to 4c are schematic views showing a method of sucking the substrate and the mask to the electrostatic chuck.
Fig. 5 is a schematic diagram showing an electronic device.
Description of the reference numerals
24: electrostatic chuck
30: electrostatic chuck system
31: potential difference applying part
32: potential difference control unit
33: magnetic force generating part
35: magnetic force generating part driving mechanism
Detailed Description
Hereinafter, preferred embodiments and examples of the present invention will be described with reference to the accompanying drawings. However, the following embodiments and examples are merely illustrative of preferred configurations of the present invention, and the scope of the present invention is not limited to these configurations. In the following description, the hardware configuration and software configuration, processing flow, manufacturing conditions, dimensions, materials, shapes, and the like of the apparatus are not limited to those described above unless specifically stated otherwise.
The present invention can be applied to a device for depositing various materials on a surface of a substrate to form a film, and can be preferably applied to a device for forming a thin film (material layer) of a desired pattern by vacuum vapor deposition. As a material of the substrate, any material such as glass, a film of a polymer material, and metal can be selected, and the substrate may be a substrate in which a film such as polyimide is laminated on a glass substrate, for example. As the vapor deposition material, any material such as an organic material or a metallic material (metal, metal oxide, or the like) may be selected. The present invention can be applied to a film forming apparatus including a sputtering apparatus and a CVD (Chemical Vapor Deposition: chemical vapor deposition) apparatus, in addition to the vacuum deposition apparatus described in the following description. The technique of the present invention is particularly applicable to a manufacturing apparatus of an organic electronic device (for example, an organic light-emitting element, a thin film solar cell), an optical member, or the like. Among them, an apparatus for manufacturing an organic light-emitting element, which forms an organic light-emitting element by evaporating a deposition material onto a substrate through a mask, is one of preferred application examples of the present invention.
[ apparatus for manufacturing electronic device ]
Fig. 1 is a plan view schematically showing a part of the structure of a manufacturing apparatus of an electronic device.
The manufacturing apparatus of fig. 1 is used for manufacturing a display panel of an organic EL display device for a smart phone, for example. In the case of a display panel for a smart phone, for example, a film for forming an organic EL element is formed on a 4.5-generation substrate (about 700mm×about 900 mm) or a 6-generation full-size (about 1500mm×about 1850 mm) or half-cut-size (about 1500mm×about 925 mm) substrate, and then the substrate is cut to produce a plurality of small-size panels.
The manufacturing apparatus of an electronic device generally includes a plurality of cluster apparatuses 1 and relay devices connected between the cluster apparatuses.
The group device 1 includes a plurality of film forming devices 11 for performing processing (for example, film forming) on the substrate S, a plurality of mask storage devices 12 for storing the masks M before and after use, and a transfer chamber 13 disposed in the center thereof. As shown in fig. 1, the transfer chamber 13 is connected to the plurality of film forming apparatuses 11 and the mask storage apparatus 12, respectively.
A transfer robot 14 for transferring a substrate and a mask is disposed in the transfer chamber 13. The transfer robot 14 transfers the substrate S from the path chamber 15 of the relay device disposed upstream to the film forming device 11. The transfer robot 14 transfers the mask M between the film forming apparatus 11 and the mask storage apparatus 12. The transfer robot 14 is, for example, a robot having a structure in which a robot hand for holding the substrate S or the mask M is attached to a multi-joint arm.
In the film forming apparatus 11 (also referred to as a vapor deposition apparatus), a vapor deposition material stored in a vapor deposition source is heated by a heater and evaporated, and is deposited on a substrate through a mask. A series of film forming processes such as transfer of the substrate S to the transfer robot 14, adjustment (alignment) of the relative positions of the substrate S and the mask M, fixation of the substrate S to the mask M, film formation (vapor deposition) and the like are performed by the film forming apparatus 11.
In the mask storage device 12, a new mask used in the film forming process in the film forming device 11 and a used mask are separately stored in two cassettes. The transfer robot 14 transfers the used mask from the film forming apparatus 11 to the cassette of the mask storage apparatus 12, and transfers a new mask stored in another cassette of the mask storage apparatus 12 to the film forming apparatus 11.
The cluster apparatus 1 is connected to a path chamber 15 and a buffer chamber 16, the path chamber 15 transferring the substrate S from the upstream side to the cluster apparatus 1 in the flow direction of the substrate S, and the buffer chamber 16 transferring the substrate S having been subjected to the film formation process in the cluster apparatus 1 to another cluster apparatus on the downstream side. The transfer robot 14 in the transfer chamber 13 receives the substrate S from the upstream path chamber 15 and transfers the substrate S to one of the film forming apparatuses 11 (for example, the film forming apparatus 11 a) in the cluster apparatus 1. The transfer robot 14 receives the substrate S, which has been subjected to the film formation process in the cluster apparatus 1, from one of the plurality of film forming apparatuses 11 (for example, the film forming apparatus 11 b) and transfers the substrate S to the buffer chamber 16 connected to the downstream side.
A swivel chamber 17 for changing the orientation of the substrate is provided between the buffer chamber 16 and the path chamber 15. The turning chamber 17 is provided with a transfer robot 18, and the transfer robot 18 is configured to receive the substrate S from the buffer chamber 16 and transfer the substrate S to the path chamber 15 by rotating the substrate S by 180 °. Thus, the orientation of the substrate S is the same in the upstream cluster apparatus and the downstream cluster apparatus, and the substrate processing is facilitated.
The path room 15, the buffer room 16, and the swing room 17 are so-called relay devices that connect the cluster devices, and the relay devices provided on the upstream side and/or downstream side of the cluster devices include at least one of the path room, the buffer room, and the swing room.
The film forming apparatus 11, the mask storage apparatus 12, the conveyance chamber 13, the buffer chamber 16, the turn-around chamber 17, and the like are maintained in a high vacuum state during the manufacturing process of the organic light emitting element. The path chamber 15 is typically maintained in a low vacuum state, but may also be maintained in a high vacuum state as desired.
In this embodiment, the structure of the apparatus for manufacturing an electronic device is described with reference to fig. 1, but the present invention is not limited to this, and other kinds of apparatuses and chambers may be provided, and the arrangement between these apparatuses and chambers may be changed.
The specific configuration of the film forming apparatus 11 will be described below.
[ film Forming apparatus ]
Fig. 2 is a schematic diagram showing the structure of the film forming apparatus 11. In the following description, an XYZ orthogonal coordinate system in which the vertical direction is the Z direction is used. When the substrate S is fixed so as to be parallel to the horizontal plane (XY plane) during film formation, the width direction (direction parallel to the short side) of the substrate S is defined as the X direction, and the length direction (direction parallel to the long side) is defined as the Y direction. In addition, the rotation angle around the Z axis is denoted by θ.
The film forming apparatus 11 includes a vacuum chamber 21 maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen, and a substrate support unit 22, a mask support unit 23, an electrostatic chuck 24, and a vapor deposition source 25 provided inside the vacuum chamber 21.
The substrate support unit 22 is a member that receives and holds the substrate S conveyed by the conveyance robot 14 provided in the conveyance chamber 13, and is also called a substrate holder.
A mask support unit 23 is provided below the substrate support unit 22. The mask supporting unit 23 is a member that receives and holds the mask M conveyed by the conveying robot 14 provided in the conveying chamber 13, and is also called a mask holder.
The mask M has an opening pattern corresponding to the thin film pattern formed on the substrate S, and is placed on the mask support unit 23. In particular, a Mask used for manufacturing an organic EL element for a smart phone is a Metal Mask having a Fine opening pattern formed therein, and is also called a FMM (Fine Metal Mask).
An electrostatic chuck 24 for attracting and fixing a substrate by electrostatic attraction is provided above the substrate support unit 22. The electrostatic chuck 24 has a structure in which a circuit such as a metal electrode is embedded in a dielectric (e.g., ceramic material) substrate. The electrostatic chuck 24 may be either a coulomb force type electrostatic chuck or a johnson-ravigneaux type electrostatic chuck or a gradient force type electrostatic chuck. The electrostatic chuck 24 is preferably a gradient force type electrostatic chuck. The electrostatic chuck 24 is a gradient force type electrostatic chuck, and even when the substrate S is an insulating substrate, the electrostatic chuck 24 can satisfactorily perform suction. For example, in the case where the electrostatic chuck 24 is a coulomb force type electrostatic chuck, when a positive (+) and a negative (-) potential are applied to the metal electrode, a polarized charge having a polarity opposite to that of the metal electrode is induced to the adsorbate such as the substrate S through the dielectric base, and the substrate S is adsorbed and fixed to the electrostatic chuck 24 by electrostatic attraction therebetween. The electrostatic chuck 24 may be formed of one plate or may be formed with a plurality of sub-plates. In the case of forming the circuit by one board, a plurality of circuits may be included in the circuit to control the electrostatic attraction in one board so as to be different depending on the position.
In the present embodiment, as described later, not only the substrate S (the 1 st adsorbate) but also the mask M (the 2 nd adsorbate) are adsorbed and held by the electrostatic chuck 24 before film formation.
That is, in the present embodiment, the substrate S (the 1 st adsorbate) placed on the lower side in the vertical direction of the electrostatic chuck 24 is sucked and held by the electrostatic chuck, and then the mask M (the 2 nd adsorbate) placed on the opposite side of the electrostatic chuck 24 across the substrate S (the 1 st adsorbate) is sucked and held by the electrostatic chuck 24 across the substrate S (the 1 st adsorbate). In particular, when the mask M is sucked by the electrostatic chuck 24 via the substrate S, a part of the mask M is sucked by the magnetic force generating unit 33, and the part of the mask M sucked by the magnetic force of the magnetic force generating unit 33 becomes a starting point of the suction of the mask M by the electrostatic chuck. Further, by moving the magnetic force generating unit 33 in a direction parallel to the suction surface of the electrostatic chuck 24, suction in this direction can be guided. This will be described later with reference to fig. 3 and 4.
Although not shown in fig. 2, deterioration or degradation of the organic material deposited on the substrate S may be suppressed by providing a cooling mechanism (e.g., a cooling plate) for suppressing a temperature rise of the substrate S on the opposite side of the suction surface of the electrostatic chuck 24.
The vapor deposition source 25 includes a crucible (not shown) for storing a vapor deposition material to be deposited on a substrate, a heater (not shown) for heating the crucible, a shutter (not shown) for preventing the vapor deposition material from scattering toward the substrate until the evaporation rate from the vapor deposition source becomes constant, and the like. The vapor deposition source 25 can have various structures depending on the application such as a point (point) vapor deposition source and a linear (linear) vapor deposition source.
Although not shown in fig. 2, the film forming apparatus 11 includes a film thickness monitor (not shown) and a film thickness calculating unit (not shown) for measuring the thickness of the film deposited on the substrate.
A substrate Z actuator 26, a mask Z actuator 27, an electrostatic chuck Z actuator 28, a position adjustment mechanism 29, and the like are provided on the upper outer side (atmosphere side) of the vacuum vessel 21. These actuators and position adjustment mechanisms are constituted by, for example, a motor and a ball screw, or a motor and a linear guide. The substrate Z actuator 26 is a driving member for raising and lowering (Z-direction movement) the substrate support unit 22. The mask Z actuator 27 is a driving member for lifting (Z-direction movement) the mask support unit 23. The electrostatic chuck Z actuator 28 is a driving member for raising and lowering (Z-direction movement) the electrostatic chuck 24.
The position adjustment mechanism 29 is a driving member for alignment of the electrostatic chuck 24. The position adjustment mechanism 29 moves the entire electrostatic chuck 24 in the X direction, Y direction, and θ rotation with respect to the substrate support unit 22 and the mask support unit 23. In the present embodiment, the electrostatic chuck 24 is adjusted in position in the directions X, Y and θ in a state where the substrate S is adsorbed, so that the alignment of the relative positions of the substrate S and the mask M is adjusted.
An alignment camera 20 may be provided on the outer upper surface of the vacuum chamber 21 in addition to the above-described driving mechanism, and the alignment camera 20 may be configured to capture alignment marks formed on the substrate S and the mask M through a transparent window provided on the upper surface of the vacuum chamber 21. In the present embodiment, the alignment camera 20 may be provided at a position corresponding to the diagonal line of the rectangular substrate S, the mask M, and the electrostatic chuck 24 or at a position corresponding to the 4 corners of the rectangle.
The position adjustment mechanism 29 performs alignment for adjusting the positions of the substrate S (the 1 st adsorbate) and the mask M (the 2 nd adsorbate) by relatively moving the substrate S (the 1 st adsorbate) and the mask M (the 2 nd adsorbate) based on the positional information of the substrate S (the 1 st adsorbate) and the mask M (the 2 nd adsorbate) acquired by the alignment camera 20.
The film forming apparatus 11 includes a control unit (not shown). The control unit has functions such as conveyance and alignment of the substrate S, control of the vapor deposition source 25, and control of film formation. The control unit may be constituted by a computer having a processor, a memory, a storage device, I/O, and the like, for example. In this case, the function of the control section is realized by the processor executing a program stored in the memory or the storage device. As the computer, a general-purpose personal computer or an embedded computer or PLC (programmable logic controller: programmable logic controller) may be used. Alternatively, part or all of the functions of the control unit may be constituted by a circuit such as an ASIC or FPGA. The control unit may be provided for each film forming apparatus, or one control unit may control a plurality of film forming apparatuses.
[ Electrostatic chuck System ]
The electrostatic chuck system 30 according to the present embodiment will be described with reference to fig. 3a to 3 d.
Fig. 3a is a conceptual block diagram of the electrostatic chuck system 30 of the present embodiment, fig. 3b is a schematic top view of the electrostatic chuck 24, and fig. 3c is a schematic top view of the electrostatic chuck 24 and the magnetic force generating portion 33. Fig. 3d is a schematic view of the magnetic force generating unit driving mechanism 35 for moving the magnetic force generating unit 33.
As shown in fig. 3a, the electrostatic chuck system 30 of the present embodiment includes an electrostatic chuck 24, a potential difference applying section 31, a potential difference control section 32, a magnetic force generating section 33, and a magnetic force generating section driving mechanism 35.
The potential difference applying section 31 applies a potential difference for generating electrostatic attraction to the electrode section of the electrostatic chuck 24.
The potential difference control unit 32 controls the magnitude of the potential difference applied to the electrode unit from the potential difference applying unit 31, the start time of the application of the potential difference, the holding time of the potential difference, the order of the application of the potential difference, and the like, according to the progress of the suction process of the electrostatic chuck system 30 or the film forming process of the film forming apparatus 11. The potential difference control unit 32 can, for example, independently control the potential difference application to the plurality of sub-electrode units 241 to 249 included in the electrode unit of the electrostatic chuck 24 for different sub-electrode units. In the present embodiment, the potential difference control unit 32 is implemented independently of the control unit of the film forming apparatus 11, but the present invention is not limited to this, and may be unified as the control unit of the film forming apparatus 11.
The electrostatic chuck 24 includes an electrode portion for generating an electrostatic attraction force for attracting an object to be attracted (for example, the substrate S and the mask M) on the attraction surface, and the electrode portion may include a plurality of sub-electrode portions 241 to 249. For example, as shown in fig. 3b, the electrostatic chuck 24 of the present embodiment includes a plurality of sub-electrode portions 241 to 249 divided along the longitudinal direction (Y direction) of the electrostatic chuck 24 and/or the width direction (X direction) of the electrostatic chuck 24.
Each sub-electrode portion includes an electrode pair 34 to which positive (polarity 1) and negative (polarity 2) potentials are applied in order to generate electrostatic attraction force. For example, each electrode pair 34 includes a 1 st electrode 341 to which a positive potential is applied and a 2 nd electrode 342 to which a negative potential is applied.
As shown in fig. 3b, the 1 st electrode 341 and the 2 nd electrode 342 have a comb shape, respectively. In one sub-electrode portion, the comb-teeth portions of the 1 st electrode 341 are alternately arranged so as to face the comb-teeth portions of the 2 nd electrode 342. By forming the comb teeth of the electrodes 341 and 342 so as to face each other and to intersect each other in this way, the interval between the electrodes to which different potentials are applied can be narrowed, a large uneven electric field can be formed, and the substrate S can be attracted by the gradient force.
In the present embodiment, the electrodes 341 and 342 of the sub-electrode portions 241 to 249 of the electrostatic chuck 24 have been described as having a comb shape, but the present invention is not limited to this, and may have various shapes as long as electrostatic attraction can be generated between the electrodes and the object to be adsorbed.
The electrostatic chuck 24 of the present embodiment has a plurality of suction portions corresponding to the plurality of sub-electrode portions.
The suction portion is provided so as to be divided in the longitudinal direction (Y-axis direction) and the width direction (X-axis direction) of the electrostatic chuck 24, but the suction portion is not limited thereto, and may be divided only in the longitudinal direction or the width direction of the electrostatic chuck 24. The plurality of suction portions may be realized by physically one plate having a plurality of electrode portions, or may be realized by physically dividing a plurality of plates each having one or more electrode portions. For example, in the embodiment shown in fig. 3b, each of the plurality of adsorbing portions may be implemented so as to correspond to each of the plurality of sub-electrode portions, or may be implemented so that one adsorbing portion includes a plurality of sub-electrode portions.
That is, by controlling the application of the potential difference to the sub-electrode portions 241 to 249 by the potential difference control portion 32, as described later, it is possible to configure one adsorbing portion by the 3 sub-electrode portions 241, 244, 247 arranged in the direction (Y direction) intersecting the adsorbing traveling direction (X direction) of the substrate S. As long as the plurality of suction portions can suction the substrate independently, the specific physical structure and circuit structure thereof may be changed.
(magnetic force generating section)
The electrostatic chuck system 30 of the present invention includes a magnetic force generating unit 33, and the magnetic force generating unit 33 applies a magnetic force to the mask M in order to control the position of the start point of the suction of the mask M and the traveling direction of the suction when the suction object, for example, the mask M, is sucked by the electrostatic chuck 24 through the substrate S. As shown in fig. 3a, the magnetic force generating unit 33 is disposed on the opposite side of the suction surface of the electrostatic chuck 24, and can be realized by a permanent magnet or an electromagnet.
As shown in fig. 3c, the magnetic force generating portion 33 is preferably formed such that the area of the magnetic force generating portion 33 when projected onto the suction surface of the electrostatic chuck 24 is smaller than the area of the suction surface.
Thus, the magnetic force generating unit 33 applies a magnetic force not to the whole mask M at the same time, but only to the mask portion at the position corresponding to the magnetic force generating unit 33, and selectively attracts the corresponding portion of the mask M toward the electrostatic chuck 24 (see fig. 4 c). That is, the corresponding portion of the mask M is attracted by the magnetic force from the magnetic force generating portion 33, and deformed to be closer to the electrostatic chuck 24 than the other portion. Thus, when a potential difference for attracting the mask M is applied to the electrostatic chuck 24, the corresponding portion of the mask M is attracted by the electrostatic chuck 24 first.
The term "area when the magnetic force generating unit 33 is projected onto the suction surface of the electrostatic chuck 24" as used herein refers to an area when a portion of the magnetic force generating unit 33 that generates a magnetic force that attracts the mask M when the mask M contacts the substrate S in a process of attracting the mask M through the substrate S is projected onto the suction surface of the electrostatic chuck 24. Therefore, for example, when the magnetic force generating unit 33 is configured by an electromagnet module having a plurality of regions divided in a plane parallel to the suction surface of the electrostatic chuck 24, and when the electromagnet module of only a part of the regions is supplied with electric power to generate magnetic force when the mask M is brought into contact with the substrate S, the area of the part of the regions when the electromagnet module is projected onto the suction surface of the electrostatic chuck 24 may be smaller than the area of the suction surface.
Then, when the magnetic force generating unit 33 moves in a direction parallel to the suction surface, the other portions of the mask M are sequentially attracted and deformed to approach the electrostatic chuck 24 according to the movement of the magnetic force generating unit 33, and are sucked by the electrostatic chuck 24 through the substrate S by the potential difference applied to the electrostatic chuck 24. Thus, the mask M is sequentially adsorbed from the adsorption start point thereof along the moving direction of the magnetic force generating portion 33, and no wrinkles remain after the adsorption is completed.
The magnetic force generating portion 33 is preferably formed to be shorter than the length of the suction surface in the 1 st direction (for example, the short side direction, X direction of the electrostatic chuck 24) parallel to the suction surface of the electrostatic chuck 24. For example, in order to more precisely control the position of the suction start point and the suction traveling direction of the mask M, the length of the magnetic force generating unit 33 in the 1 st direction is more preferably 1/2 or less of the length of the suction surface in the 1 st direction. The length of the magnetic force generating portion 33 in the 1 st direction here means the length of the portion of the magnetic force generating portion 33 having the longest length in the 1 st direction.
In the case where the electrostatic chuck 24 has a plurality of suction portions, the magnetic force generating portion 33 is preferably provided so as to be equal to or less than the length in the 1 st direction of the suction portion corresponding to the position of the magnetic force generating portion 33 among the plurality of suction portions.
The magnetic force generating portion 33 is preferably formed parallel to the suction surface and substantially the same as or shorter than the suction surface in the 2 nd direction (for example, the long side direction of the electrostatic chuck 24, the Y direction) intersecting the 1 st direction. That is, when the length of the magnetic force generating portion 33 in the 1 st direction is shorter than the length of the suction surface of the electrostatic chuck 24 in the 1 st direction, the length of the magnetic force generating portion in the 2 nd direction can be made substantially the same as or shorter than the length of the suction surface of the electrostatic chuck 24 in the 2 nd direction, as shown in fig. 3 c. When the length of the magnetic force generating unit 33 in the 2 nd direction is substantially the same as the length of the suction surface in the 2 nd direction, the start point and the traveling direction of the mask suction cannot be controlled in the 2 nd direction, but as described above, the start point and the traveling direction of the mask suction can be controlled in the 1 st direction.
In contrast, when the length of the magnetic force generating unit 33 in the 2 nd direction is smaller than the length of the suction surface in the 2 nd direction, the start point and the traveling direction of the mask suction can be controlled not only in the 1 st direction but also in the 2 nd direction.
The magnetic force generating unit 33 of the present embodiment is not limited to a structure in which the length of the suction surface is shorter in the 1 st direction, and may have various sizes and shapes as long as the start point and the progress of suction of the mask M can be controlled in at least one direction or the diagonal direction of the 1 st direction and the 2 nd direction as shown in fig. 3 c. For example, the length of the suction surface may be substantially the same as the length of the suction surface in the 1 st direction which is the short side of the suction surface, and may be shorter than the length of the suction surface in the 2 nd direction which is the long side of the suction surface.
As shown in fig. 3c (i) to (v), the magnetic force generating unit 33 may be arranged so that its position (the position of a magnetic force application position or a suction start point described later) corresponds to the peripheral edge portion of the electrostatic chuck 24 when projected onto the suction surface of the electrostatic chuck 24. For example, the magnetic force generating portion 33 is disposed so as to correspond to a peripheral edge portion of the long side of the electrostatic chuck 24. This makes it possible to make the start point of mask suction a part of the peripheral edge of the electrostatic chuck 24. However, the present invention is not limited to the configuration shown in fig. 3c (i) to (v), and the magnetic force generating portion 33 may be provided at a position corresponding to the peripheral edge portion on the short side of the electrostatic chuck 24, or may be disposed at other positions (for example, 3c (vi) to (viii)) than the peripheral edge portion, for example, at a position corresponding to the central portion of the electrostatic chuck 24.
In the present embodiment, the magnetic force generating unit 33 is provided so as to be movable in a direction including a direction parallel to the suction surface of the electrostatic chuck 24. For example, the magnetic force generating unit 33 is provided so as to be movable in a direction (1 st direction) parallel to the short side of the suction surface of the electrostatic chuck 24.
In this way, by providing the magnetic force generating portion 33 so as to be movable in the direction parallel to the suction surface, the suction traveling direction of the mask M can be controlled more precisely. That is, as the magnetic force generating portion 33 moves in a direction parallel to the suction surface of the electrostatic chuck 24, the portion of the mask M that is attracted by the magnetic force generating portion 33 moves, and thus the suction traveling direction of the mask M can be precisely controlled.
The moving direction of the magnetic force generating unit 33 is not limited to the 1 st direction, which is the short side direction of the electrostatic chuck 24, and may be any direction. For example, the electrostatic chuck 24 may be moved in the 2 nd direction, which is the longitudinal direction, or may be moved in the diagonal direction. The movement of the magnetic force generating unit 33 is not limited to a linear movement, and may be a curved movement or a movement in which the direction is changed in the middle of the movement.
By variously combining the shape of the magnetic force generating portion 33, the arrangement position in the plane parallel to the suction surface (the position of a magnetic force application position or suction start point described later), and the movement direction in the plane parallel to the suction surface, the mask suction travel can be controlled more precisely.
For example, when the magnetic force generating portion 33 is formed shorter than the length of the suction surface of the electrostatic chuck 24 in the 1 st direction and is disposed at the long side peripheral edge portion, the movement direction of the magnetic force generating portion 33 is parallel to the 1 st direction, whereby the mask M can be controlled to be sequentially sucked from the one long side peripheral edge portion toward the other long side peripheral edge portion.
When the magnetic force generating unit 33 is formed to be shorter than the length of the suction surface of the electrostatic chuck 24 in both the 1 st and 2 nd directions, the arrangement position of the magnetic force generating unit 33 (the position of the magnetic force application position or suction start point described later) and the moving direction of the magnetic force generating unit 33 can be combined, and the suction can be controlled so as to be performed in either one of the 1 st and 2 nd directions or in the diagonal direction.
In order to drive the magnetic force generating section 33 in a direction parallel to the suction surface of the electrostatic chuck 24, the electrostatic chuck system 30 of the present embodiment includes a magnetic force generating section driving mechanism 35. For example, as shown in fig. 3d, the magnetic force generating unit driving mechanism 35 can be realized by a motor and a ball screw, but the present invention is not limited to this, and other components may be used as long as the magnetic force generating unit 33 can be moved in a direction parallel to the suction surface. For example, the magnetic force generating unit 33 may be driven by a motor and a rack/pinion.
The magnetic force generating unit 33 may be provided so as to be movable between a magnetic force applying position, which is a position where a magnetic force can be applied to the mask M, and a retracted position which is farther from the mask M than the magnetic force applying position. While the magnetic force generating portion 33 is located at the magnetic force applying position, a portion of the mask M corresponding to the position of the magnetic force generating portion 33 is attracted toward the magnetic force generating portion 33, that is, toward the electrostatic chuck 24 by the magnetic force from the magnetic force generating portion 33, and is deformed to be closer to the lower surface of the substrate S attracted to the lower surface of the electrostatic chuck 24 than other portions of the mask M (that is, deformed in a direction perpendicular to the main surface of the mask M). Thereby, the magnetic force generating unit 33 can control the start point of mask adsorption. When the magnetic force generating unit 33 is located at the retracted position, the magnetic force acting on the mask M is relatively weak, and only a small magnetic force to such an extent that the mask M cannot be attracted or substantially no magnetic force acts.
The magnetic force application position and the retracted position can be set to be separated from each other in a direction parallel to the suction surface of the electrostatic chuck. For example, as shown in fig. 3d, the retracted position of the magnetic force generating unit 33 may be a position separated from the upper surface of the electrostatic chuck 24 in the 1 st direction (the longitudinal direction of the electrostatic chuck 24, the Y direction) from the magnetic force applying position. That is, the retracted position and the magnetic force application position can be located substantially on a plane parallel to the suction surface. In this case, the magnetic force does not substantially act in a direction perpendicular to the main surface of the mask M, and substantially no deformation of the mask M occurs.
When the retracted position and the magnetic force applying position of the magnetic force generating unit 33 are located on a plane parallel to the suction surface, the mechanism for driving the magnetic force generating unit 33 between the magnetic force applying position and the retracted position and the magnetic force generating unit driving mechanism 35 for controlling the suction direction of the mask M can be realized as one driving mechanism.
However, the present invention is not limited to this, and the magnetic force application position and the retracted position of the magnetic force generating unit 33 may be located at positions separated from each other in the vertical direction.
[ adsorption method based on electrostatic chuck System ]
Hereinafter, a method of sucking the substrate S and the mask M to the electrostatic chuck 24 will be described with reference to fig. 4a to 4 c.
Fig. 4a illustrates a process of sucking the substrate S to the electrostatic chuck 24 (the 1 st sucking stage).
In the present embodiment, as shown in fig. 4a, the entire surface of the substrate S is not simultaneously sucked to the lower surface of the electrostatic chuck 24, but is sequentially sucked from one end toward the other end along the 1 st side (short side) of the electrostatic chuck 24. However, the present invention is not limited to this, and for example, the substrate may be adsorbed from one corner on the diagonal line of the electrostatic chuck 24 toward the other corner facing the one corner.
In order to sequentially adsorb the substrate S along the 1 st side of the electrostatic chuck 24, the order of applying the 1 st potential difference for substrate adsorption to the plurality of sub-electrode portions 241 to 249 may be controlled, or the 1 st potential difference may be applied simultaneously to the plurality of sub-electrode portions, but the structure and the supporting force of the supporting portion of the substrate supporting unit 22 for supporting the substrate S may be made different.
Fig. 4a shows an embodiment in which the substrates S are sequentially attracted to the electrostatic chuck 24 by controlling the potential difference applied to the plurality of sub-electrode portions 241 to 249 of the electrostatic chuck 24. Here, 3 sub-electrode portions 241, 244, 247 arranged along the longitudinal direction (Y direction) of the electrostatic chuck 24 constitute the 1 st suction portion 41, 3 sub-electrode portions 242, 245, 248 in the central portion of the electrostatic chuck 24 constitute the 2 nd suction portion 42, and the remaining 3 sub-electrode portions 243, 246, 249 constitute the 3 rd suction portion 43.
The potential difference control unit 32 controls to sequentially apply the 1 st potential difference (Δv1) from the 1 st suction unit 41 toward the 3 rd suction unit 43 along the 1 st side (width) of the electrostatic chuck 24. In order to reliably adhere the substrate S to the electrostatic chuck 24, the 1 st potential difference (Δv1) is set to a sufficiently large potential difference.
As a result, the substrate S is attracted to the electrostatic chuck 24 from the side of the substrate S corresponding to the 1 st attraction section 41 toward the 3 rd attraction section 43 (i.e., the substrate S is attracted in the X direction) through the center of the substrate S, and the substrate S is attracted to the electrostatic chuck 24 flat without leaving wrinkles in the center of the substrate.
At a predetermined time after the completion of the suction process (1 st suction stage) of the substrate S onto the electrostatic chuck 24, as shown in fig. 4b, the potential difference control unit 32 reduces the potential difference applied to the electrode portion of the electrostatic chuck 24 from the 1 st potential difference (Δv1) to a 2 nd potential difference (Δv2) smaller than the 1 st potential difference (Δv1).
The 2 nd potential difference (Δv2) is a suction maintenance potential difference for maintaining the substrate S in a state of being sucked by the electrostatic chuck 24, and is a potential difference lower than the 1 st potential difference (Δv1) applied when the substrate S is sucked by the electrostatic chuck 24. Even if the potential difference applied to the electrostatic chuck 24 drops to the 2 nd potential difference (Δv2), the substrate S can maintain the adsorbed state of the substrate even if the 2 nd potential difference (Δv2) lower than the 1 st potential difference (Δv1) is applied after the substrate S is adsorbed to the electrostatic chuck 24 by the 1 st potential difference (Δv1).
In this way, after the potential difference applied to the electrode portion of the electrostatic chuck 24 is reduced to the 2 nd potential difference, the relative positions of the substrate S attracted to the electrostatic chuck 24 and the mask M supported by the mask supporting unit 23 are adjusted (aligned).
The magnetic force generating unit 33 may be held at the retracted position during the period from the start of the process of sucking the substrate S by the electrostatic chuck 24 to the process of aligning the substrate. This makes it possible to perform suction and substrate alignment of the substrate S without attracting the mask M by substantially preventing the magnetic force from the magnetic force generating unit 33 from acting on the mask M.
Next, as shown in fig. 4c, the mask M is sucked by the electrostatic chuck 24 through the substrate S. That is, the mask M is attached to the lower surface of the substrate S attached to the electrostatic chuck 24.
Therefore, first, the electrostatic chuck 24 having the substrate S attached thereto is lowered toward the mask M by the electrostatic chuck Z actuator 28. The electrostatic chuck 24 is lowered to a limit position where the electrostatic attraction force generated by the attraction holding potential difference (the 2 nd potential difference, Δv2) applied to the electrostatic chuck 24 does not act on the mask M.
In a state where the electrostatic chuck 24 is lowered to the limit position, the magnetic force generating portion 33 moves from the retracted position to the magnetic force applying position. When the magnetic force generating portion 33 moves to the magnetic force applying position, the magnetic force applied from the magnetic force generating portion 33 in the direction perpendicular to the main surface of the mask M is sufficiently large, and the portion of the mask M corresponding to the position of the magnetic force generating portion 33 is attracted upward by the magnetic force. Thereby, a starting point of suction of the mask M to the electrostatic chuck 24 is formed.
The potential difference control unit 32 controls the electrode unit of the electrostatic chuck 24 to apply the 3 rd potential difference (Δv3) in a state where a portion of the mask M corresponding to the position of the magnetic force generating unit 33 is attracted by the magnetic force.
The 3 rd potential difference (Δv3) is larger than the 2 nd potential difference (Δv2), and is preferably a magnitude of a degree that the mask M can be charged by electrostatic induction through the substrate S. Thereby, the mask M is attracted to the electrostatic chuck 24 through the substrate S. Particularly, at the suction start point of the mask M formed by the magnetic force generating portion 33, the mask M is closest to the electrostatic chuck 24, and therefore, the portion is first sucked by the electrostatic chuck 24.
However, the present invention is not limited to this, and the 3 rd potential difference (Δv3) may have the same magnitude as the 2 nd potential difference (Δv2). Even if the 3 rd potential difference (Δv3) has the same magnitude as the 2 nd potential difference (Δv2), as described above, the relative distance between the electrostatic chuck 24 or the substrate S and the mask M can be shortened by the lowering of the electrostatic chuck 24 to the limit position and the attraction of the magnetic force generating portion 33 to the mask M, and therefore, electrostatic induction can be caused to the mask M by the polarization charges electrostatically induced to the substrate, and the attraction force of the mask M to the electrostatic chuck 24 across the substrate can be obtained.
The 3 rd potential difference (Δv3) may be smaller than the 1 st potential difference (Δv1), or may be set to a size equivalent to the 1 st potential difference (Δv1) in consideration of shortening of the process time (tact).
The mask M may be attracted by the magnetic force generating unit 33, and after a predetermined potential difference is applied to the electrode portion of the electrostatic chuck 24 by the potential difference control unit 32, the electrostatic chuck 24 having the substrate S attached thereto may be further lowered toward the mask M by the electrostatic chuck Z actuator 28. This shortens the distance between the substrate S and the mask M, thereby promoting the adsorption of the mask M. In this case, the magnetic force generating unit 33 may be further lowered together with the electrostatic chuck 24.
In the mask suction process shown in fig. 4c, after the suction start point of the mask M is formed by the magnetic force generating portion 33, the magnetic force generating portion 33 is moved from the magnetic force applying position in a direction parallel to the suction surface of the electrostatic chuck 24, for example, in the 1 st direction.
As the magnetic force generating portion 33 moves in a direction parallel to the suction surface of the electrostatic chuck 24, the portion of the mask M corresponding to the position of the magnetic force generating portion 33 is sequentially sucked toward the electrostatic chuck 24. At this time, the potential difference control unit 32 sequentially applies the 3 rd potential difference (Δv3) along the 1 st side (i.e., along the 1 st direction) from the 1 st adsorbing portion 41 toward the 3 rd adsorbing portion 43 in accordance with the movement of the magnetic force generating portion 33.
That is, as shown in fig. 4c, control is performed such that the 3 rd potential difference is applied to the 1 st adsorbing portion 41 corresponding to the adsorption start point (magnetic force application position) based on the magnetic force generating portion 33, then, when the magnetic force generating portion 33 moves from the magnetic force application position in the 1 st direction to the position corresponding to the 2 nd adsorbing portion 43, the 3 rd potential difference is applied to the 2 nd adsorbing portion 42, and when the magnetic force generating portion 33 moves to the position corresponding to the 2 nd adsorbing portion 43, the 3 rd potential difference is applied to the 3 rd adsorbing portion 43.
Thus, the mask M is suctioned to the electrostatic chuck 24 from the side of the mask M corresponding to the 1 st suction portion 41, which is the start point of the suction of the mask M, toward the 3 rd suction portion 43 side through the center portion of the mask M (i.e., the suction of the mask M is performed in the X direction), and the mask M is suctioned to the electrostatic chuck 24 flat without leaving wrinkles in the center portion of the mask M (the 2 nd suction stage).
However, the present invention is not limited to the embodiment shown in fig. 4c, and for example, the 3 rd potential difference (Δv3) may be applied to the whole electrostatic chuck 24 at the same time. That is, since the mask suction start point is already formed by the magnetic force generating portion 33, even if the 3 rd potential difference is applied to the entire electrostatic chuck 24 at the same time, suction is performed first at the start point of the mask suction closest to the electrostatic chuck 24, and then as the magnetic force generating portion 33 moves in the direction parallel to the suction surface, the mask portion at the corresponding position is sequentially sucked by the magnetic force generating portion, so that the suction of the mask is sequentially performed along the 1 st side.
In this way, after the mask M is entirely attracted by the electrostatic attraction of the electrostatic chuck 24 via the substrate S, the magnetic force generating unit 33 is moved to the retracted position, and the magnetic force acting in the direction perpendicular to the main surface of the mask M is reduced by the magnetic force generating unit 33. Even if the magnetic force generating unit 33 is moved to the retracted position, the magnetic force acting on the mask M is reduced, and the mask M can be stably maintained in the attracted state by the electrostatic attraction force by the electrostatic chuck 24.
According to the embodiment of the present invention, in the mask suction process of sucking the mask M by the electrostatic chuck 24 through the substrate S, after the mask suction start point is formed by sucking a part of the mask M by the magnetic force generating section 33 having the area smaller than the suction surface of the electrostatic chuck 24, the potential difference for mask suction is applied to the electrostatic chuck 24 while moving the magnetic force generating section 33 in the direction parallel to the suction surface of the electrostatic chuck 24, so that the masks are sequentially sucked from the formed suction start point. This allows the electrostatic chuck 24 to suck the mask M through the substrate S without leaving wrinkles.
[ film Forming Process ]
A film formation method using the adsorption method according to the present embodiment will be described below.
In a state where the mask M is placed on the mask support unit 23 in the vacuum chamber 21, the substrate is carried into the vacuum chamber 21 of the film forming apparatus 11 by the carrying robot 14 of the carrying chamber 13.
The robot hand of the transfer robot 14, which enters the vacuum container 21, places the substrate S on the support portion of the substrate support unit 22.
Then, the electrostatic chuck 24 is lowered toward the substrate S, and after the electrostatic chuck 24 is sufficiently brought close to or in contact with the substrate S, a 1 st potential difference (Δv1) is applied to the electrostatic chuck 24 to attract the substrate S.
After the substrate is attracted to the electrostatic chuck 24, the potential difference applied to the electrostatic chuck 24 is reduced from the 1 st potential difference (Δv2) to the 2 nd potential difference (Δv2). Even if the potential difference applied to the electrostatic chuck 24 is reduced to the 2 nd potential difference (Δv2), the state of adhesion of the electrostatic chuck 24 to the substrate can be maintained in the subsequent steps.
In a state where the substrate S is attracted to the electrostatic chuck 24, the substrate S is lowered toward the mask M in order to measure a relative positional displacement of the substrate S with respect to the mask M. In another embodiment of the present invention, in order to reliably prevent the substrate from falling off the electrostatic chuck 24 during the lowering of the substrate adsorbed to the electrostatic chuck 24, the potential difference applied to the electrostatic chuck 24 may be reduced to the 2 nd potential difference (Δv2) after the lowering of the substrate is completed (i.e., immediately before the alignment process described later is started).
When the substrate S is lowered to the measurement position, the alignment marks formed on the substrate S and the mask M are photographed by the alignment camera 20, and the relative positional displacement of the substrate and the mask is measured. In another embodiment of the present invention, in order to further improve the accuracy of the measurement step of the relative position of the substrate and the mask, the potential difference applied to the electrostatic chuck 24 may be reduced to the 2 nd potential difference after the measurement step for alignment is completed (alignment step).
As a result of the measurement, when it is found that the relative positional displacement of the substrate with respect to the mask exceeds the threshold value, the substrate S in a state of being attracted to the electrostatic chuck 24 is moved in the horizontal direction (xyθ direction), and the substrate is adjusted (aligned) with respect to the mask. In another embodiment of the present invention, the potential difference applied to the electrostatic chuck 24 may be reduced to the 2 nd potential difference (Δv2) after the completion of the position adjustment process. This can further improve the accuracy in the whole alignment process (relative position measurement or position adjustment).
After the alignment process, the electrostatic chuck 24 is lowered toward the mask M and moved to an extreme position. In the extreme position, the 2 nd potential difference applied to the electrostatic chuck 24 does not charge the mask M, and substantially the electrostatic attraction does not act on the mask M.
In this state, the magnetic force generating unit 33 is moved to the magnetic force applying position. When the magnetic force generating portion 33 reaches the magnetic force applying position, the portion of the mask M corresponding to the position of the magnetic force generating portion 33 is attracted upward due to the magnetic force applied from the magnetic force generating portion 33 to the mask M. Thereby, a starting point of mask adsorption is formed.
In this state, the 3 rd potential difference (Δv3) is sequentially applied to the whole electrostatic chuck or from the suction portion corresponding to the mask suction start point while the magnetic force generating portion 33 is moved in the direction parallel to the suction surface of the electrostatic chuck 24, and the corresponding portion of the mask M is sucked through the substrate S. The mask M is sequentially adsorbed from the adsorption start point, and the mask M is adsorbed to the electrostatic chuck 24 without leaving wrinkles. As described above, after the start point of mask suction is formed, the electrostatic chuck 24 having the substrate S sucked thereto may be further lowered toward the mask M by the electrostatic chuck Z actuator 28.
After the entire mask M is sucked by the application of the 3 rd potential difference, the magnetic force generating unit 33 is moved from the magnetic force applying position to the retracted position.
Then, the potential difference applied to the electrode portion or the sub-electrode portion of the electrostatic chuck 24 is reduced to a 4 th potential difference (Δv4), which is a potential difference capable of maintaining a state where the substrate and the mask are attracted to the electrostatic chuck 24. This can shorten the time taken to separate the substrate S and the mask M from the electrostatic chuck 24 after the film forming process is completed.
Next, the shutter of the vapor deposition source 25 is opened, and the vapor deposition material is vapor deposited on the substrate S through the mask.
After vapor deposition to a desired thickness, the potential difference applied to the electrode portion or sub-electrode portion of the electrostatic chuck 24 is reduced to a 5 th potential difference (Δv5) to separate the mask M, and the substrate is lifted up by the electrostatic chuck Z actuator 28 in a state where only the substrate is adsorbed on the electrostatic chuck 24.
Next, the robot hand of the transfer robot 14 enters the vacuum chamber 21 of the film forming apparatus 11, and a potential difference of zero (0) or opposite polarity is applied to the electrode portion or the sub-electrode portion of the electrostatic chuck 24, so that the electrostatic chuck 24 is separated from the substrate and lifted. Then, the transfer robot 14 removes the vapor-deposited substrate from the vacuum container 21.
In the above description, the film forming apparatus 11 is configured to perform film formation with the film forming surface of the substrate S facing downward in the vertical direction, that is, a so-called upward vapor deposition method (upward deposition), but the present invention is not limited thereto, and the substrate S may be configured to be vertically arranged on the side surface of the vacuum vessel 21, and the film forming surface of the substrate S may be configured to perform film formation in a state parallel to the gravity direction.
[ method of manufacturing electronic device ]
Next, an example of a method for manufacturing an electronic device using the film forming apparatus of the present embodiment will be described. Hereinafter, as examples of the electronic device, a structure and a manufacturing method of the organic EL display device are illustrated.
First, an organic EL display device to be manufactured is explained. Fig. 5 (a) shows an overall view of the organic EL display device 60, and fig. 5 (b) shows a 1-pixel cross-sectional structure.
As shown in fig. 5 (a), a plurality of pixels 62 each including a plurality of light-emitting elements are arranged in a matrix in a display region 61 of the organic EL display device 60. As will be described in detail later, the light-emitting elements each have a structure including an organic layer sandwiched between a pair of electrodes. The pixel herein refers to the smallest unit that can display a desired color in the display area 61. In the case of the organic EL display device of the present embodiment, the pixel 62 is configured by a combination of the 1 st light-emitting element 62R, the 2 nd light-emitting element 62G, and the 3 rd light-emitting element 62B which display mutually different light emissions. The pixel 62 is often constituted by a combination of a red light emitting element, a green light emitting element, and a blue light emitting element, but may be constituted by a combination of a yellow light emitting element, a cyan light emitting element, and a white light emitting element, and is not particularly limited as long as it is at least 1 color or more.
Fig. 5 (B) is a schematic partial cross-sectional view at line a-B of fig. 5 (a). The pixel 62 includes an organic EL element including an anode 64, a hole transport layer 65, one of light-emitting layers 66R, 66G, and 66B, an electron transport layer 67, and a cathode 68 on a substrate 63. Among them, the hole transport layer 65, the light emitting layers 66R, 66G, 66B, and the electron transport layer 67 correspond to organic layers. In this embodiment, the light-emitting layer 66R is an organic EL layer that emits red light, the light-emitting layer 66G is an organic EL layer that emits green light, and the light-emitting layer 66B is an organic EL layer that emits blue light. The light-emitting layers 66R, 66G, and 66B are formed in patterns corresponding to light-emitting elements (also sometimes referred to as organic EL elements) that emit red light, green light, and blue light, respectively. Further, the anode 64 is formed separately for each light emitting element. The hole transport layer 65, the electron transport layer 67, and the cathode 68 may be formed so as to be common to the plurality of light emitting elements 62R, 62G, and 62B, or may be formed for each light emitting element. In order to prevent the anode 64 and the cathode 68 from being short-circuited by foreign substances, an insulating layer 69 is provided between the anodes 64. Further, since the organic EL layer is degraded by moisture and oxygen, a protective layer 70 for protecting the organic EL element from moisture and oxygen is provided.
In fig. 5 (b), the hole transport layer 65 and the electron transport layer 67 are shown as one layer, but may be formed in a plurality of layers including a hole blocking layer and an electron blocking layer according to the structure of the organic EL display element. In addition, a hole injection layer having a band structure that allows holes to be smoothly injected from the anode 64 into the hole transport layer 65 may be formed between the anode 64 and the hole transport layer 65. Similarly, an electron injection layer may be formed between the cathode 68 and the electron transport layer 67.
Next, an example of a method for manufacturing an organic EL display device will be specifically described.
First, a circuit (not shown) for driving the organic EL display device is prepared, and a substrate 63 having an anode 64 formed thereon.
An acrylic resin is formed by spin coating on the substrate 63 on which the anode 64 is formed, and the acrylic resin is patterned by photolithography so that an opening is formed at a portion where the anode 64 is formed, and the insulating layer 69 is formed. The opening corresponds to a light emitting region where the light emitting element actually emits light.
The substrate 63 on which the insulating layer 69 is patterned is carried into the 1 st organic material film forming apparatus, the substrate is held by the electrostatic chuck, and the hole transporting layer 65 is formed as a common layer over the anode 64 in the display region. The hole transport layer 65 is formed by vacuum deposition. In practice, since the hole transport layer 65 is formed to be larger than the display region 61, a high-definition mask is not required.
Next, the substrate 63 having the hole transporting layer 65 formed thereon is carried into the 2 nd organic material film forming apparatus and held by the electrostatic chuck. The substrate and the mask are aligned, and the substrate is placed on the mask, and a red light emitting layer 66R is formed on a portion of the substrate 63 where the red light emitting element is arranged.
In the same manner as the formation of the light-emitting layer 66R, the light-emitting layer 66G emitting green light is formed by the 3 rd organic material film forming device, and the light-emitting layer 66B emitting blue light is formed by the 4 th organic material film forming device. After the formation of the light-emitting layers 66R, 66G, and 66B is completed, the electron transport layer 67 is formed on the entire display region 61 by the 5 th film forming apparatus. The electron transport layer 67 is formed as a common layer to the 3-color light-emitting layers 66R, 66G, and 66B.
The substrate on which the electron transport layer 67 is formed is moved to a metallic vapor deposition material film forming device, and a cathode 68 is formed.
According to the present invention, the substrate and/or the mask is sucked and held by the electrostatic chuck 24, but when the mask is sucked, the mask can be sucked to the electrostatic chuck 24 without wrinkles by forming the suction start point by the magnetic force generating portion 33 and moving the magnetic force generating portion 33 in the direction parallel to the suction surface.
Thereafter, the substrate is moved to a plasma CVD apparatus to form a film protective layer 70, thereby completing the organic EL display device 60.
When the substrate 63 on which the insulating layer 69 is patterned is carried into a film forming apparatus until the formation of the protective layer 70 is completed, the light-emitting layer made of an organic EL material may be degraded by moisture and oxygen if exposed to an atmosphere containing moisture and oxygen. Thus, in this example, the substrate is carried in and out between the film forming apparatuses under a vacuum atmosphere or an inert gas atmosphere.
The above-described embodiment shows an example of the present invention, but the present invention is not limited to the configuration of the above-described embodiment, and may be modified appropriately within the scope of the technical idea.

Claims (21)

1. An electrostatic chuck system for adsorbing an adsorbate, characterized in that,
the electrostatic chuck system includes:
an electrostatic chuck having an electrode portion and an adsorption surface for adsorbing the adsorbate;
a potential difference applying unit that applies a potential difference to the electrode unit, the potential difference causing the adsorbate to adhere to the electrostatic chuck;
a potential difference control unit configured to control a magnitude of a potential difference applied from the potential difference application unit to the electrode unit, a time at which the potential difference is applied, a time at which the potential difference is maintained, and an order in which the potential difference is applied, in accordance with an progress of the electrostatic chuck system suction process;
A magnetic force generating unit disposed on the opposite side of the suction surface of the electrostatic chuck; and
a driving mechanism for moving the magnetic force generating part in the 1 st direction parallel to the adsorption surface of the electrostatic chuck,
the area of the magnetic force generating part projected onto the adsorption surface is smaller than the area of the adsorption surface,
after a mask suction start point is formed by sucking a part of the mask by the magnetic force of the magnetic force generating unit, the potential difference is applied to the electrode unit by the potential difference control unit while the magnetic force generating unit is moved in the 1 st direction by the driving mechanism.
2. The electrostatic chuck system according to claim 1, wherein,
the length of the magnetic force generating unit in the 1 st direction parallel to the suction surface when projected onto the suction surface is smaller than the length of the suction surface in the 1 st direction.
3. An electrostatic chuck system according to claim 2, wherein,
the length of the magnetic force generating portion in the 1 st direction when projected onto the suction surface is 1/2 or less of the length of the suction surface in the 1 st direction.
4. The electrostatic chuck system according to claim 1, wherein,
The 1 st direction is parallel to a width direction of the suction surface of the electrostatic chuck.
5. The electrostatic chuck system according to claim 4, wherein,
the driving mechanism moves the magnetic force generating portion along the 1 st direction from the peripheral edge portion on one long side of the suction surface toward the peripheral edge portion on the other long side.
6. The electrostatic chuck system according to claim 1, wherein,
the 1 st direction is parallel to the longitudinal direction of the suction surface of the electrostatic chuck.
7. The electrostatic chuck system according to claim 6, wherein,
the driving mechanism moves the magnetic force generating portion along the 1 st direction from a peripheral edge portion on one short side of the suction surface toward a peripheral edge portion on the other short side.
8. The electrostatic chuck system according to claim 1, wherein,
the potential difference applying section applies a 1 st potential difference for adsorbing a substrate and a 2 nd potential difference for adsorbing a mask across the substrate.
9. The electrostatic chuck system according to claim 8, wherein,
the magnetic force generating section is provided so as to be movable between a magnetic force applying position for applying a magnetic force to the mask and a retracted position for applying a magnetic force weaker than the magnetic force applied at the magnetic force applying position to the mask.
10. A film forming apparatus for forming a film on a substrate through a mask, characterized in that,
the film forming apparatus includes an electrostatic chuck system for sucking a substrate and a mask,
the electrostatic chuck system is the electrostatic chuck system of any one of claims 1-9.
11. An adsorption method for adsorbing an adsorbate, characterized by comprising the steps of,
the adsorption method comprises the following steps:
a 1 st adsorption step of applying a 1 st potential difference to an electrode portion of an electrostatic chuck to adsorb a substrate to an adsorption surface of the electrostatic chuck, the adsorption surface being configured to adsorb the adsorbate;
a suction step of sucking a part of a mask through the substrate by a magnetic force of a magnetic force generating unit disposed on the opposite side of the suction surface of the electrostatic chuck, thereby forming a start point of suction of the mask; and
a 2 nd adsorption step of, after forming a start point of the mask adsorption by attracting a part of the mask by a magnetic force of the magnetic force generating unit, applying a 2 nd potential difference, which is the same as or different from the 1 st potential difference, to the electrode unit to adsorb the mask to the electrostatic chuck, and moving the magnetic force generating unit in a direction parallel to an adsorption surface of the electrostatic chuck to adsorb the mask via the substrate;
The area of the magnetic force generating part projected onto the adsorption surface is smaller than the area of the adsorption surface.
12. The adsorption method of claim 11, wherein,
the 2 nd adsorption stage makes the mask contact with the substrate from the part of the mask attracted in the attraction stage, and makes the electrostatic chuck adsorb the mask through the substrate.
13. The adsorption method of claim 11, wherein,
after the 2 nd adsorption stage, a magnetic force reduction stage of making the magnetic force applied to the mask lower than the magnetic force of the attraction stage is further included.
14. The adsorption method of claim 13, wherein,
the attracting step includes a step of moving the magnetic force generating section to a magnetic force applying position capable of attracting a part of the mask by a magnetic force,
the magnetic force lowering step includes a step of moving the magnetic force generating section from the magnetic force applying position to a retracted position where the magnetic force applied to the mask is lowered.
15. The adsorption method of claim 11, wherein,
in the attracting phase, the mask is locally attracted.
16. A film forming method for forming a vapor deposition material on a substrate through a mask, characterized in that,
the film forming method comprises the following steps:
a step of loading a mask into the vacuum container;
a step of loading a substrate into the vacuum container;
a 1 st adsorption stage of applying a 1 st potential difference to an electrode portion of the electrostatic chuck to adsorb the substrate to an adsorption surface of the electrostatic chuck on which the substrate is adsorbed;
a suction step of sucking a part of the mask through the substrate by a magnetic force from a magnetic force generating unit disposed on the opposite side of the suction surface of the electrostatic chuck, thereby forming a start point of suction of the mask;
a 2 nd adsorption step of, after forming a start point of the mask adsorption by attracting a part of the mask by a magnetic force of the magnetic force generating unit, applying a 2 nd potential difference, which is the same as or different from the 1 st potential difference, to the electrode unit to adsorb the mask to the electrostatic chuck, and moving the magnetic force generating unit in a direction parallel to an adsorption surface of the electrostatic chuck to adsorb the mask via the substrate; and
a step of evaporating a vapor deposition material while the substrate and the mask are being adsorbed to the electrostatic chuck, and forming a film of the vapor deposition material on the substrate through the mask;
The area of the magnetic force generating part projected onto the adsorption surface is smaller than the area of the adsorption surface.
17. The method according to claim 16, wherein,
the 2 nd adsorption stage makes the mask contact with the substrate from the part of the mask attracted in the attraction stage, and makes the electrostatic chuck adsorb the mask through the substrate.
18. The method according to claim 16, wherein,
after the 2 nd adsorption stage, a magnetic force reduction stage of making the magnetic force applied to the mask lower than the magnetic force of the attraction stage is further included.
19. The method according to claim 18, wherein,
the attracting step includes a step of moving the magnetic force generating section to a magnetic force applying position capable of attracting a part of the mask by a magnetic force,
the magnetic force lowering step includes a step of moving the magnetic force generating section from the magnetic force applying position to a retracted position where the magnetic force applied to the mask is lowered.
20. The method according to claim 16, wherein,
in the attracting phase, the mask is locally attracted.
21. A method for manufacturing an electronic device, characterized in that,
an electronic device manufactured using the film forming method according to any one of claims 16 to 20.
CN201910278040.5A 2018-07-31 2019-04-09 Electrostatic chuck system, film forming apparatus and method, suction method, and method for manufacturing electronic device Active CN110777332B (en)

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