KR102360558B1 - Vacuum deposition apparatus and method for producing vapor deposited film and organic electronic device - Google Patents

Abstract

An object of the present invention is to provide a vacuum vapor deposition apparatus capable of forming a film in a desired pattern with high precision by preventing thermal deformation during vapor deposition.
In the deposition chamber 1, an evaporation source 2 for performing evaporation on a substrate through a mask, an evaporation source moving mechanism for moving the evaporation source 2 relative to the substrate when performing evaporation, or a substrate when performing evaporation A vacuum vapor deposition apparatus provided with a substrate moving mechanism that moves relatively to the evaporation source, wherein the evaporation source moving mechanism or and constitutes the substrate moving mechanism.

Description

A vacuum vapor deposition apparatus, the manufacturing method of a vapor deposition film, and the manufacturing method of an organic electronic device TECHNICAL FIELD

The present invention relates to a vacuum vapor deposition apparatus, a method for manufacturing a vapor deposition film, and a method for manufacturing an organic electronic device.

In a vapor deposition apparatus that forms a thin film by depositing a film forming material that evaporates from an evaporation source on a substrate through a mask having a predetermined mask pattern formed therein, the mask is thermally deformed by receiving heat from the evaporation source during vapor deposition (during film formation) , the position of the mask and the substrate may be shifted due to thermal deformation of the mask, and the pattern of the thin film formed on the substrate may be shifted from the desired position. In particular, since a mask having a high-definition pattern is used for manufacture of organic electronic devices such as display panels for mobile phones and televisions, the influence by thermal deformation is large.

Therefore, as disclosed in Patent Document 1, for example, it has been proposed to use a mask made of an invar material which is a low thermal expansion material in order to suppress thermal deformation, but even if a low thermal expansion material is used for the mask, the coefficient of linear expansion is 0 It is difficult, and even in this case, thermal deformation may become a problem.

[Patent Document 1] Japanese Patent Laid-Open No. 2004-323888

The present invention has been made in view of the above-described phenomenon, and an object of the present invention is to provide a vacuum vapor deposition apparatus capable of forming a film in a desired pattern with high precision by suppressing thermal deformation during vapor deposition of a mask.

The gist of the present invention will be described with reference to the accompanying drawings.

A first aspect of the present invention provides an evaporation source (2) for performing vapor deposition on a substrate through a mask in a vapor deposition chamber (1), and an evaporation source moving mechanism for relatively moving the evaporation source (2) with respect to the substrate during vapor deposition or a vacuum vapor deposition apparatus provided with a substrate moving mechanism for moving the substrate relative to the evaporation source during vapor deposition, wherein the mask is pre-heated using the evaporation source (2) before starting vapor deposition on the substrate It relates to a vacuum deposition apparatus characterized in that the evaporation source moving mechanism or the substrate moving mechanism is configured to perform the

Further, a vacuum deposition apparatus characterized in that the mask is preheated by using heat generated from the evaporation source (2) during preliminary heating before deposition for stabilizing the film-forming rate of the film-forming material evaporated from the evaporation source (2). is about

In addition, a shutter 7 is installed on the evaporation source 2, and the mask is preheated by changing the relative positional relationship between the evaporation source and the mask while the shutter 7 is closed. It relates to a vacuum deposition apparatus.

Further, it relates to a vacuum deposition apparatus characterized in that the evaporation source moving mechanism is configured so that the alignment of the substrate and the mask on which deposition is first performed in the continuous deposition is performed in parallel with the preheating of the mask.

Further, in the deposition chamber 1, a plurality of deposition regions 3 and 4 for performing deposition on the substrate are arranged in parallel in a direction orthogonal to the moving direction of the evaporation source, and each of the plurality of deposition regions 3 and 4 is provided. , a retreat region for retreating the evaporation source is provided outside the deposition region, and the evaporation source 2 is moved in the same direction as the juxtaposition direction of the deposition regions 3 and 4 to deposit from one deposition region to the other. The evaporation source moving mechanism is configured to move to the region, and when the masks disposed in each of the plurality of deposition zones 3 and 4 are heated in advance, after heating the mask disposed in one deposition zone, the evaporation source ( The evaporation source moving mechanism is configured to move 2) in the juxtaposition direction of the deposition regions (3, 4) to the other deposition region without retreating to the retreat region. it's about

A second aspect of the present invention provides a method for manufacturing a vapor deposition film, comprising: a step of installing a substrate in a deposition chamber; a step of heating a film forming material accommodated in an evaporation source to stabilize a film forming rate; A method for manufacturing a vapor deposition film, comprising a step of attaching vapor, and changing the relative positional relationship between the evaporation source and the substrate between the steps of stabilizing the film formation rate, and heating the mask by heat from the evaporation source will be.

A third aspect of the present invention is a method for manufacturing an organic electronic device comprising a plurality of elements each having an organic layer sandwiched between a pair of electrodes on a substrate, comprising the steps of: installing a substrate on which the plurality of electrodes are formed in a vapor deposition chamber; , a step of positioning a mask having a plurality of openings with respect to the substrate; a step of heating a film forming material contained in an evaporation source to stabilize a film forming rate; and vapor of the film forming material on the substrate through the mask. and forming at least a part of the organic layer by attaching it, wherein the relative positional relationship between the evaporation source and the substrate is changed between the steps of stabilizing the film formation rate, and the mask is heated by the heat of the evaporation source. It relates to a method for manufacturing an organic electronic device.

ADVANTAGE OF THE INVENTION According to this invention, it becomes possible to suppress thermal distortion during vapor deposition of a mask, and to form into a film in a desired pattern with high precision.

1 is a schematic explanatory perspective view of the present embodiment.
Fig. 2 is a schematic explanatory plan view of the present embodiment.
3 is a schematic explanatory plan view of the present embodiment.
4 is a schematic explanatory plan view of the present embodiment.
Fig. 5 (a) is a perspective view of an organic EL display device manufactured using the vacuum deposition apparatus according to the present invention, and (b) is a cross-sectional view taken along line AB of (a).

EMBODIMENT OF THE INVENTION Embodiment of the vacuum vapor deposition apparatus which concerns on this invention is demonstrated concretely based on drawing.

A vacuum vapor deposition apparatus according to an embodiment of the present invention includes, in a vapor deposition chamber, an evaporation source (material accommodating part) for performing vapor deposition on a substrate through a mask, and an evaporation source moving mechanism for relatively moving the evaporation source with respect to the substrate when performing vapor deposition A vacuum deposition apparatus comprising: This evaporation source moving mechanism has a function of changing the relative positional relationship between the evaporation source and the substrate, more specifically, the relative positional relationship between the evaporation source and the substrate in a plane direction parallel to the film formation surface of the substrate. Then, before starting deposition on the substrate by maintaining a vacuum in the deposition chamber, the evaporation source is moved relative to the mask, and the evaporation source is moved to preheat the mask using heat generated from the evaporation source. make up the instrument In the present embodiment, the relative positional relationship between the evaporation source and the substrate is changed by moving the evaporation source by the evaporation source moving mechanism. Alternatively, the relative positional relationship between the evaporation source and the substrate may be changed by moving both the substrate and the evaporation source. Therefore, it is also possible to call the evaporation source moving mechanism and the substrate moving mechanism referred to herein as a mechanism for changing the relative positional relationship between the evaporation source and the substrate.

1 and 2, an embodiment of a vacuum deposition apparatus according to the present invention is shown. FIG. 1 is a perspective view in which a wall of the deposition chamber 1 is partially removed so that the inside of the vacuum deposition apparatus is visible, and FIG. 2 is a plan view viewed from the upper surface of the deposition chamber 1 . In the vapor deposition chamber 1, a plurality of vapor deposition regions 3 and 4 for performing vapor deposition on a substrate are arranged in parallel in a direction orthogonal to the film-forming movement direction (deposition region movement direction). And, for each of the deposition regions 3 and 4, a retreat region for retreating the evaporation source 2 is provided outside the deposition regions 3 and 4, respectively.

Further, in each of the deposition regions 3 and 4, a mask stand (not shown) for holding a mask and a substrate, respectively, is provided. After the substrates carried in from the respective carry-out ports 8 and 9 respectively corresponding to the deposition regions 3 and 4, respectively, are aligned with the mask by the alignment mechanism provided in the deposition regions 3 and 4, respectively. , in a fixed state by overlapping the mask, respectively, installed and maintained on the mask stand.

In addition, a vapor deposition area|region refers to the area|region where the film-forming material which evaporates from the evaporation source 2 adheres to a board|substrate.

In this embodiment, in order to stabilize the deposition rate of the deposition film formed by the vapor emitted from the evaporation source 2, heat generated from the evaporation source 2 is used during preheating before the deposition starts to form the mask. An evaporation source moving mechanism is configured to perform pre-heating. Specifically, before starting the deposition, the evaporation source 2 is reciprocally moved in the deposition movement direction in either the longitudinal direction or the width direction of the substrate in the deposition regions 3 and 4 in the film formation movement direction to perform a thermal practice operation. do This movement does not necessarily have to be a reciprocating motion, and may be a circular motion or the like. Moreover, if the fluctuation|variation of the film-forming rate is suppressed compared with the case where preliminary heating is not performed, the said preliminary heating is for stabilizing the film-forming rate. The preheating is preferably performed so that the fluctuation of the film-forming rate falls within a predetermined range. Above all, it is not necessary to verify whether it falls within a predetermined range every time a film is formed, and the preliminary heating time may be determined by a preliminary experiment or the like.

This preliminary heating is performed to stabilize the molten state of the film-forming material so that degassing of the film-forming material accommodated in the evaporation source 2 and the film-forming rate are stabilized, for example, at the same temperature as the heating temperature at the time of film-forming the evaporation source 2 The temperature is raised to a furnace and heated for several minutes. In addition, the evaporation source 2 of this embodiment is composed of three line sources as shown in FIG.

In addition, while the evaporation source 2 is being preheated, it is good to perform the alignment of the board|substrate and the mask which vapor-deposit first, and it may also be performed in parallel.

That is, it is preferable to preheat the mask using the deposition preparation period such as alignment of the substrate and the mask and preheating of the evaporation source 2 .

In order to further shorten the time required until the start of film formation, the preheating temperature of the evaporation source 2 and the movement speed of the evaporation source 2 by the evaporation source moving mechanism so as to end the preheating of the mask when the alignment of the substrate and the mask is finished It is preferable to set Accordingly, it is possible to reduce the waiting time for only preheating the mask, perform preheating of the mask using the deposition preparation period, and prevent thermal deformation of the mask during deposition due to the heat generated from the evaporation source 2 . can In addition, the heat source for pre-heating is the evaporation source 2, and there is no need to prepare another heat source. Furthermore, since the heat generated during pre-heating of the evaporation source 2 is used, pre-heating can be performed efficiently. .

Further, in the prior art, the preliminary heating of the evaporation source is performed by arranging the evaporation source in the retreat region (region where the vapor deposition material does not adhere to the substrate), so the preliminary heating of the evaporation source does not contribute to the preliminary heating of the mask.

As shown in Fig. 1, a shutter 7 is installed in the evaporation source 2, and as a first operation mode, the shutter 7 is reciprocated with respect to the mask in a closed state to perform preheating of the mask. It is preferable to do Specifically, the shutter 7 is provided at an upper position of the evaporation source 2 so as to be able to open and close slidably. Further, even when the shutter 7 is provided, the shutter 7 is heated by the evaporation source 2 , and the mask is heated by the heated shutter 7 . As represented by this example, in a state in which the shutter of the evaporation source is closed, a configuration in which the evaporation source is heated while changing the relative positions of the evaporation source and the substrate is a preferred embodiment of the present invention. By setting it as such a structure, while being able to pre-heat a mask efficiently in the state in which an evaporation source exists just below a board|substrate, it can also prevent that a film|membrane adheres to a board|substrate in a pre-heating step. In addition, the shutter should just be able to shield the vapor|steam discharged|emitted from an evaporation source so that it may not adhere to a board|substrate, and it is not necessarily necessary to provide in an evaporation source.

Further, in this embodiment, the evaporation source 2 is moved in the same direction as the juxtaposition direction of the deposition regions 3 and 4 (evaporation region movement direction), and from one deposition region 3 to the other deposition region. The evaporation source moving mechanism is configured so that it can move to (4).

Specifically, in the present embodiment, a rail 10 extending in the direction of movement of the deposition area on the bottom of the deposition chamber 1 is provided, and a frame-type slider for moving the deposition zone of the deposition zone capable of reciprocating sliding movement with respect to the rail 10 . (6) is installed. Then, a rail 11 extending in the film-forming movement direction is provided on the upper surface of the slider 6 for moving the deposition region, and a slider 5 for film-forming movement capable of reciprocating sliding movement with respect to the rail 11 is provided. It is set as the structure which provided the evaporation source 2 and the shutter 7 to the slider 5 for movement. Moreover, the arm member 12 for moving the slider 5 for film-forming movement is connected to the bottom surface of the slider 5 for film-forming movement. Then, a control device for driving the arm member 12 to move the film-forming movement slider 5 (evaporation source 2) in the film-forming movement direction or the deposition region movement direction is provided outside the deposition chamber 1, and the evaporation source A moving mechanism is configured.

Therefore, after pre-heating or film formation is performed by reciprocating one evaporation source 2 in one deposition region 3 in the film-forming movement direction, it is moved in the deposition-region movement direction in the same manner in the other deposition region 4 . Pre-heating or film-forming can be performed.

In addition, in the present embodiment, when the masks disposed in the plurality of deposition regions 3 and 4 are pre-heated, the deposition regions 3 and 4 are not retreated to the retreating region and the evaporation source 2 is not retreated. The said evaporation source moving mechanism is comprised so that it may move in the juxtaposition direction of , and move from one vapor deposition region 3 to the other vapor deposition region 4 .

In Fig. 3, the trajectory of the evaporation source 2 after the start of vapor deposition on the substrate is shown by a thick line. When forming a film on a substrate provided in one deposition region 3, one of the two retreat regions provided with the evaporation source 2 interposed therebetween in the direction in which the rail 10 extends It is reciprocated by a predetermined number of times so as to pass through the deposition region 3 from the to the other retreating region. When film formation is performed on a substrate provided in the other deposition region 4 after film formation on the substrate provided in the deposition region 3 , the evaporation source 2 located in the retreat region outside the deposition region 3 is vapor deposition It moves in the direction of movement of the deposition region until it reaches the retreat region outside the region 4 . Then, the evaporation source 2 passes through the deposition region 4 from one of the two retreating regions provided with the vapor deposition region 4 interposed therebetween in the direction in which the rail 10 extends in the direction in which the rail 10 extends. It repeats the reciprocating movement for a predetermined number of times. In this way, it is possible to form a film on each of the substrates provided in the respective vapor deposition regions 3 and 4 .

On the other hand, the trajectory of the evaporation source 2 at the time of preheating the mask before starting vapor deposition is shown by the thick line in FIG. In the case of pre-heating a mask provided in one deposition region 3 , as shown in FIG. 4 , the evaporation source 2 is set in a predetermined direction in the film formation movement direction along the rail 11 in the deposition region 3 . Reciprocate the number of times. After that, when the mask provided in the other deposition region is preheated, the evaporation source 2 is moved from the end of the deposition region 3 without moving to the retreating region outside the deposition region 3 . It moves in the direction of movement of the deposition zone until it reaches the corresponding end of the deposition zone 4 on the other side. Then, the mask provided in the deposition region 4 is heated in advance by repeating the evaporation source 2 reciprocating the deposition region 4 a predetermined number of times in the film-forming movement direction. In this way, the mask can be preheated until the mask provided in the deposition regions 3 and 4 is thermally saturated.

When preheating the mask, unlike in the case of vapor deposition, by not moving the evaporation source 2 to the retreat region, preheating of the mask can be performed more efficiently.

As described above, in the present embodiment, when vapor deposition is performed, the mask of each deposition region is pre-heated before starting deposition, and after thermal saturation, the substrates are sequentially arranged in each deposition region 3 and 4 . Evaporation is performed continuously with respect to . By forming the film in this way, thermal deformation of the mask during vapor deposition is suppressed, the pattern of the thin film formed on the substrate during vapor deposition is not easily changed, and stable and high-precision film formation is possible.

Since the inside of the deposition chamber 1 is maintained in a vacuum state, it becomes possible to maintain the thermally saturated state of the masks after preheating each mask before starting the deposition. Therefore, even if it vapor-deposits with respect to a several board|substrate successively, it becomes possible to stably and high-precision film-forming.

In addition, this invention is not limited to this Example etc., The specific structure of each structural element can be designed suitably.

Next, an embodiment in which an organic EL display device is manufactured as an example of an organic electronic device using the vacuum deposition apparatus according to the present invention will be described.

First, the organic EL display device to be manufactured is demonstrated. Fig. 5(a) is an overall view of the organic EL display device 40, and Fig. 5(b) is a cross-sectional structure of one pixel.

As shown in FIG. 5A , in the display area 41 of the display device 40, a plurality of pixels 42 including a plurality of light emitting elements are arranged in a matrix form. Although the details will be described later, each of the light emitting elements has a structure including an organic layer sandwiched between a pair of electrodes. In addition, the pixel here refers to the minimum unit which enables display of a desired color in the display area 41. As shown in FIG. In the case of the display device according to the present exemplary embodiment, the pixel 42 is configured by a combination of the first light emitting element 42R, the second light emitting element 42G, and the third light emitting element 42B that emit light different from each other. . The pixel 42 is often composed of a combination of a red light-emitting element, a green light-emitting element, and a blue light-emitting element, but a combination of a yellow light-emitting element, a cyan light-emitting element, and a white light-emitting element may be used, and at least one color is particularly limited. it is not

Fig. 5(b) is a schematic partial cross-sectional view taken along line A-B of Fig. 5(a). The pixel 42 includes, on a substrate 43 , a first electrode (anode) 44 , a hole transport layer 45 , any one of the light emitting layers 46R, 46G, and 46B, and an electron transport layer 47 , , an organic EL element including a second electrode (cathode) 48 . Of these, the hole transport layer 45, the light emitting layers 46R, 46G, and 46B, and the electron transport layer 47 come into contact with the organic layer. In this embodiment, the light emitting layer 46R is an organic EL layer emitting red light, the light emitting layer 46G is an organic EL layer emitting green color, and the light emitting layer 46B is an organic EL layer emitting blue color. The light emitting layers 46R, 46G, and 46B are formed in a pattern corresponding to the light emitting elements (sometimes referred to as organic EL elements) emitting red, green, and blue, respectively. In addition, the first electrode 44 is formed separately for each light emitting element. The hole transport layer 45 , the electron transport layer 47 , and the second electrode 48 may be formed in common with the plurality of light emitting elements 42 , or may be formed for each light emitting element. In addition, in order to prevent the first electrode 44 and the second electrode 48 from being short-circuited by foreign substances, an insulating layer 49 is formed between the first electrodes 44 . In addition, since the organic EL layer is deteriorated by moisture and oxygen, a protective layer 50 for protecting the organic EL element from moisture and oxygen is formed.

In order to form the organic EL layer in units of light emitting elements, a method of forming a film through a mask is used. In recent years, high definition of a display device is progressing, and a mask with an opening width|variety of several tens of micrometers is used for formation of an organic electroluminescent layer. In the case of film formation using such a mask, when the mask receives heat from an evaporation source and thermally deforms during film formation, the positions of the mask and the substrate are shifted, and the pattern of the thin film formed on the substrate is shifted from the desired position. Then, the vacuum vapor deposition apparatus which concerns on this invention is used suitably for film-forming of these organic electroluminescent layers.

Next, the example of the manufacturing method of an organic electroluminescent display apparatus is demonstrated concretely.

First, a substrate 43 on which a circuit (not shown) for driving an organic EL display device and a first electrode 44 are formed is prepared.

An insulating layer ( 49) is formed. This opening corresponds to the light emitting region in which the light emitting element actually emits light.

The substrate 43 patterned with the insulating layer 49 is loaded into a vacuum vapor deposition apparatus, and a hole transport layer 45 is formed as a common layer over the first electrode 44 of the display area. The hole transport layer 45 was formed by vacuum deposition. In reality, since the hole transport layer 45 is formed in a size larger than that of the display area 41 , a high-definition mask is unnecessary.

Next, a red light emitting layer 46R is formed on a portion where a red light emitting element is disposed using a deposition mask. First, the substrate 43 on which the hole transport layer 45 is formed is loaded into the deposition region 3 of the vacuum deposition apparatus of FIG. 1 , and a mask having an opening corresponding to the region in which the first light emitting element 42R is formed. Position alignment (alignment) is performed.

If the mask to be used is not in a thermally saturated state, the mask receives heat from the evaporation source during film formation and thermally deforms, causing the mask and the substrate to misalign, and there is a fear that the light emitting layer 46R cannot be formed at a desired position. Therefore, before starting the deposition on the substrate 43, it is preferable to pre-heat the mask using the heat of the evaporation source 2 until thermally saturated. Whether or not the mask is thermally saturated can be determined by checking whether the temperature of the mask is stable, specifically, whether the time fluctuation of the temperature of the mask, which rises by receiving heat from the evaporation source 2, falls within a predetermined range. The predetermined range can be determined according to the precision required for film formation.

On the other hand, an organic EL material, which is a material of the light emitting layer 46R, is accommodated in the evaporation source 2, and preheating is performed in preparation for evaporating the organic EL material and attaching it to the substrate. In the preliminary heating, in order to stabilize the molten state of the film-forming material accommodated in the evaporation source 2, the evaporation source 2 is heated to the same temperature as the heating temperature at the time of film-forming for about a few minutes. Whether or not the molten state of the film-forming material is stable can be judged by looking at the time change of the film-forming rate (deposition rate) obtained using a film-thickness monitor (not shown). When the molten state of the film-forming material is stabilized, the amount of vapor of the film-forming material emitted from the evaporation source 2 is stabilized, so that the fluctuation of the film-forming rate falls within a predetermined range.

In this example, the mask is preheated using the heat generated by the preheating of the evaporation source 2 and the time required for the preheating. Specifically, the mask is heated by reciprocating the evaporation source 2 within the deposition area in a state where the shutter 7 is closed and vapor does not adhere to the substrate. If the temperature of the mask is stabilized until the preheating is completed, the preheating of the evaporation source 2 is completed and a film formation is possible. In order to start film formation simultaneously with the completion of the preliminary heating of the evaporation source 2, it is more efficient if the substrate and the mask are aligned while the mask is preheated. In addition, when the temperature of the mask is not stabilized even after the preliminary heating is completed, the mask is continuously heated by the evaporation source 2 until the temperature of the mask is stabilized.

After confirming that the mask is thermally stable and alignment of the substrate and the mask is completed, one of the two retreat regions provided with the evaporation source 2 interposed therebetween in the direction in which the rail 10 extends in the direction in which the rail 10 extends. move to After that, as a second operation mode, the shutter 7 is opened to start the movement of the evaporation source 2 toward the other retreating region to start vapor deposition, and reciprocating between the two retreating regions to make the light emitting layer 46R ) is formed.

As described above, according to this example, since the mask is not deformed during the formation of the light emitting layer 46R, the light emitting layer 46R can be formed on the substrate in a predetermined pattern. In addition, a separate heating facility is not required, and there is no need to waste time only for pre-heating the mask. That is, while performing preliminary heating of the evaporation source 2, it becomes possible to perform pre-heating of the mask very efficiently by using the heat generated during the preliminary heating and the waiting time for the preliminary heating.

Next, similarly to the formation of the light emitting layer 46R, a green light emitting layer 46G is formed using a mask having an opening corresponding to the region where the second light emitting element 42G is to be formed. Then, the light emitting layer 46B emitting blue light is formed using a mask having an opening corresponding to the region where the third light emitting element 42B is to be formed. When forming each of the light-emitting layers 46G and 46B, the evaporation source 2 is moved relative to the mask as was done before the light-emitting layer 46R was formed, and after confirming that the mask is thermally saturated, film formation is started. .

Once, the mask used for film formation of each of the light emitting layers 46R, 46G, and 46B waits in a vacuum deposition chamber until the next substrate is installed. Thus, since the heat of the mask is maintained by the vacuum, the thermal saturation of the mask is maintained. Therefore, it becomes possible to omit the pre-heating of the mask before starting the film formation with respect to the next board|substrate. If the mask and the substrate are brought into contact with each other, heat from the mask escapes to the substrate and the temperature of the mask decreases, or when the deposition rate is changed, before starting deposition on the newly installed substrate. , similarly, the mask may be preheated using the heat from the evaporation source 2 .

After the formation of the light emitting layers 46G and 46B is completed, the electron transport layer 47 is formed over the entire display area 41 . The electron transport layer 47 is formed as a layer common to the first to third light emitting layers.

The substrate on which the electron transport layer 47 has been formed is moved to a sputtering device to form a second electrode 48, and then moved to a plasma CVD device to form a protective layer 50, an organic EL display device 40 is completed

After the substrate 43 on which the insulating layer 49 has been patterned is brought into the vacuum vapor deposition apparatus, until the film formation of the protective layer 50 is completed, when exposed to an atmosphere containing moisture or oxygen, it is made of an organic EL material. There exists a possibility that a light emitting layer may deteriorate with water|moisture content or oxygen. Therefore, in this example, carrying in and carrying out of the board|substrate between film forming apparatuses is performed in a vacuum atmosphere or an inert gas atmosphere.

In the above example, the mask was preheated at the time of forming the light emitting layer, but it is possible to preheat the mask also when forming other layers.

The organic EL display device thus obtained can form a light emitting layer for each light emitting element with high accuracy. Accordingly, by using the above manufacturing method, it is possible to suppress the occurrence of defects in the organic EL display device due to the position shift of the light emitting layer.

In addition, although the manufacturing method of an organic electroluminescent display is demonstrated here, it is not limited to this, The present invention can be applied similarly also to all organic electronic device manufacturing methods which form the pattern of an organic layer using a mask at the time of vapor deposition. can In addition, it is not limited to an organic film, The present invention is similarly applicable also about formation of an inorganic film.

1: evaporation chamber 2: evaporation source
3, 4: deposition area 7: shutter

Claims (14)

an evaporation source for discharging the film-forming material toward the substrate through the mask;
a shutter for moving the substrate to a first position for shielding the substrate from the evaporation source and a second position for exposing the substrate to the evaporation source;
a moving means for moving at least one of the evaporation source and the substrate relative to the other;
alignment means for aligning the substrate and the mask
to provide
while the alignment means is performing the alignment, the evaporation source heats and releases the film-forming material and passes under the substrate through the evaporation source with the shutter in the first position; A deposition apparatus characterized in that the evaporation source and the substrate are relatively moved. delete 2. The evaporating source according to claim 1, wherein after the evaporating source discharges material and the shutter is in the first position, the moving means relatively moves the evaporating source and the substrate, the evaporating source releases the material and the shutter is in the second position, the moving means relatively moves the evaporation source and the substrate. delete According to claim 1,
substrate holding means for holding the substrate;
mask holding means for holding the mask
provide more,
With the substrate holding means holding the substrate, the mask holding means holding the mask, the evaporation source ejecting material and the shutter in the first position, the moving means moves the evaporation source and the substrate A deposition apparatus, characterized in that relatively moving. According to claim 5, wherein the substrate holding means has a plurality of holding parts for holding the substrate in a plurality of different places,
wherein the moving means relatively moves the evaporation source and the substrate with respect to the substrate held at each of the plurality of locations, with the evaporation source discharging material and the shutter in the first position deposition apparatus. an evaporation source for discharging the film-forming material toward the substrate through the mask;
a shutter for moving the substrate to a first position for shielding the substrate from the evaporation source and a second position for exposing the substrate to the evaporation source;
a moving means for moving at least one of the evaporation source and the substrate relative to the other;
alignment means for aligning the substrate and the mask
to provide
The evaporation source has a heating means for heating the film-forming material,
while the alignment means is performing the alignment, the heating means heats the film-forming material and passes under the substrate to the evaporation source with the shutter in the first position; A deposition apparatus, characterized in that relatively moving the evaporation source and the substrate. an evaporation source for discharging the film-forming material toward the substrate through the mask;
shutter and
a moving means for moving at least one of the evaporation source and the substrate relative to the other;
alignment means for aligning the substrate and the mask
As a control method of a deposition apparatus having,
moving the shutter to a first position that shields the substrate from the evaporation source;
moving the shutter to a second position exposing the substrate to the evaporation source;
while the alignment means is performing the alignment, the evaporation source heats and releases the film-forming material and passes under the substrate through the evaporation source with the shutter in the first position; This step of relatively moving the evaporation source and the substrate
A control method of a deposition apparatus, characterized in that it has a. an evaporation source having a heating means for heating the film-forming material and discharging the film-forming material toward the substrate through the mask;
shutter and
a moving means for moving at least one of the evaporation source and the substrate relative to the other;
alignment means for aligning the substrate and the mask
As a control method of a deposition apparatus having,
moving the shutter to a first position that shields the substrate from the evaporation source;
moving the shutter to a second position exposing the substrate to the evaporation source;
while the alignment means is performing the alignment, the heating means heats the film-forming material and passes under the substrate to the evaporation source with the shutter in the first position; A process of relatively moving the evaporation source and the substrate
A control method of a deposition apparatus, characterized in that it has a. A step of heating the mask by the control method according to claim 8 or 9;
A step of forming a film on the substrate
A film-forming method, characterized in that it has a. delete delete delete delete

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