CN106256925A - Vacuum deposition apparatus, the manufacture method of evaporation film and the manufacture method of organic electronic device - Google Patents
Vacuum deposition apparatus, the manufacture method of evaporation film and the manufacture method of organic electronic device Download PDFInfo
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- CN106256925A CN106256925A CN201610416499.3A CN201610416499A CN106256925A CN 106256925 A CN106256925 A CN 106256925A CN 201610416499 A CN201610416499 A CN 201610416499A CN 106256925 A CN106256925 A CN 106256925A
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- 238000001704 evaporation Methods 0.000 title claims abstract description 235
- 230000008020 evaporation Effects 0.000 title claims abstract description 235
- 238000001771 vacuum deposition Methods 0.000 title claims abstract description 30
- 238000000034 method Methods 0.000 title claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 108
- 230000007246 mechanism Effects 0.000 claims abstract description 42
- 238000010438 heat treatment Methods 0.000 claims abstract description 35
- 230000033001 locomotion Effects 0.000 claims abstract description 13
- 230000008859 change Effects 0.000 claims description 13
- 238000010025 steaming Methods 0.000 claims description 8
- 239000012044 organic layer Substances 0.000 claims description 7
- 238000007747 plating Methods 0.000 claims description 6
- 230000006641 stabilisation Effects 0.000 claims description 3
- 238000011105 stabilization Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 description 67
- 239000010410 layer Substances 0.000 description 47
- 238000007740 vapor deposition Methods 0.000 description 15
- 230000033228 biological regulation Effects 0.000 description 9
- 239000000463 material Substances 0.000 description 7
- 229920006395 saturated elastomer Polymers 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 208000035985 Body Odor Diseases 0.000 description 1
- 206010055000 Bromhidrosis Diseases 0.000 description 1
- 229910001374 Invar Inorganic materials 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 208000030208 low-grade fever Diseases 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The present invention provides a kind of vacuum deposition apparatus, the manufacture method of evaporation film and the manufacture method of organic electronic device, and this vacuum deposition apparatus is prevented from the thermal deformation in evaporation, thus accurately with desired pattern film forming.A kind of vacuum deposition apparatus, it is provided with evaporation source (2) and evaporation source travel mechanism or substrate travel mechanism in deposited chamber (1), substrate is deposited with by described evaporation source across mask, described evaporation source travel mechanism makes described evaporation source (2) relative to described substrate relative movement when being deposited with, described substrate travel mechanism makes described substrate relative to described evaporation source relative movement when being deposited with, wherein, described evaporation source travel mechanism or described substrate travel mechanism are configured to: before described substrate starts evaporation, described evaporation source (2) is utilized to carry out the heating in advance of described mask.
Description
Technical field
The present invention relates to vacuum deposition apparatus, the manufacture method of evaporation film and the manufacture method of organic electronic device.
Background technology
A kind of evaporation coating device, it makes from the filmogen of evaporation source evaporation across the mask of the mask pattern being formed with regulation
It is deposited on substrate and forms thin film, in this evaporation coating device, there is such a case that mask is in evaporation (in film forming)
It is heated from evaporation source and thermal deformation occurs, cause due to the thermal deformation of this mask mask to occur partially with the position of substrate
Move, so that the pattern of the thin film being formed on substrate is from desired position skew.Particularly, at mobile phone or electricity
In the manufacture of the organic electronic devices such as the display floater depending on grade, employ the mask of the pattern with fine, therefore heat
The impact of deformation is bigger.
It is thus possible, for instance as disclosed in Patent Document 1, in order to suppress thermal deformation, it is proposed that use by swollen as low grade fever
This scheme of mask that the invar alloy material of swollen material is constituted, but, even if mask is used low thermal expansion material,
Also being difficult to make linear expansion coefficient is 0, and in this case, thermal deformation the most still can become problem.
Patent documentation 1: Japanese Unexamined Patent Publication 2004-323888 publication
Summary of the invention
The present invention is to complete in view of above-mentioned present situation, it is therefore intended that provides a kind of and can suppress mask in evaporation
Thermal deformation thus accurately with the vacuum deposition apparatus of desired pattern film forming.
Referring to the drawings the purport of the present invention is illustrated.
1st form of the present invention relates to vacuum deposition apparatus, and it is provided with evaporation source 2 and evaporation source in deposited chamber 1
Travel mechanism or substrate travel mechanism, substrate is deposited with by described evaporation source across mask, and described evaporation source moves
Mechanism makes described evaporation source 2 relative to described substrate relative movement when being deposited with, and described substrate travel mechanism is entering
Make described substrate relative to described evaporation source relative movement during row evaporation, it is characterised in that described evaporation source travel mechanism
Or described substrate travel mechanism is configured to: before described substrate starts evaporation, utilize described evaporation source 2 to carry out institute
State the heating in advance of mask.
It addition, relate to a kind of vacuum deposition apparatus, it is characterised in that make to be evaporated from described evaporation source 2 being used for
The stable evaporation of the film forming speed of filmogen before pre-hanker, utilize the heat sent from this evaporation source 2 to carry out described
The heating in advance of mask.
It addition, relate to a kind of vacuum deposition apparatus, it is characterised in that this vacuum deposition apparatus is configured to, in described steaming
Rise and 2 be provided with baffle plate 7, make the relative position of described evaporation source and described mask when closing these baffle plate 7
Relationship change carries out the heating in advance of described mask.
It addition, relate to a kind of vacuum deposition apparatus, it is characterised in that described evaporation source travel mechanism is configured to, and makes institute
State the heating in advance of the position alignment initially carrying out substrate and the mask being deposited with in continuous evaporating-plating and described mask simultaneously
Carry out.
It addition, relate to a kind of vacuum deposition apparatus, it is characterised in that in described deposited chamber 1, with described evaporation
Be arranged side by side on the direction that the moving direction in source is vertical multiple evaporation region 3 for described substrate is deposited with,
4, for multiple described evaporation regions 3,4, it is respectively equipped with outside described evaporation region and makes what described evaporation source kept out of the way to move back
Keeping away region, described evaporation source travel mechanism is configured to, and makes described evaporation source 2 with described evaporation region 3,4 also
The side that row's setting direction is identical moves up and can move to another evaporation region from an evaporation region, described steaming
The travel mechanism that rises is configured to: adding the mask being respectively arranged in multiple described evaporation region 3,4 in advance
During heat, after to the mask heating being arranged in an evaporation region, described evaporation source 2 is made not keep out of the way described moving back
In the case of keeping away in region, the side of being arranged side by side in described evaporation region 3,4 moves up, thus mobile to another
Evaporation region.
2nd form of the present invention relates to the manufacture method being deposited with film, it is characterised in that the manufacture method tool of this evaporation film
There is a following operation: the operation being arranged in deposited chamber by substrate;The filmogen being accommodated in evaporation source is heated and makes
The operation that film forming speed is stable;And make the steam of described filmogen adhere to work on the substrate across mask
Sequence, in the period making the stable operation of described film forming speed, makes the relative position relation of described evaporation source and described substrate
Change, and utilize the heat of described evaporation source to heat described mask.
3rd form of the present invention includes the manufacture method of organic electronic device, and described organic electronic device possesses multiple unit
Part, described element possesses the organic layer clipped by pair of electrodes on substrate, it is characterised in that described organic electronic device
The manufacture method of part has following operation: will be formed with the operation that the substrate of multiple electrode is arranged in deposited chamber;Make tool
The operation that the mask of standby multiple openings is directed at relative to described substrate position;The filmogen being accommodated in evaporation source is added
Heat also makes the stable operation of film forming speed;And make the steam of described filmogen be attached to described base across described mask
On plate thus form at least one of operation of described organic layer, in the phase making the stable operation of described film forming speed
Between, make the relative position relation change of described evaporation source and described substrate, utilize the heat of described evaporation source to heat described
Mask.
In accordance with the invention it is possible to suppression mask thermal deformation in evaporation such that it is able to accurately with desired figure
Case film forming.
Accompanying drawing explanation
Fig. 1 is the summary description axonometric chart of the present embodiment.
Fig. 2 is the summary description top view of the present embodiment.
Fig. 3 is the summary description top view of the present embodiment.
Fig. 4 is the summary description top view of the present embodiment.
(a) of Fig. 5 is the axonometric chart of the organic EL display using the vacuum deposition apparatus of the present invention to produce,
B () is the sectional view of the A-B line in (a).
Label declaration
1: deposited chamber;
2: evaporation source;
3,4: evaporation region;
7: baffle plate.
Detailed description of the invention
With reference to the accompanying drawings the embodiment of the vacuum deposition apparatus of the present invention is specifically illustrated.
The vacuum deposition apparatus of embodiments of the present invention is the vacuum deposition apparatus possessing following part in deposited chamber:
Evaporation source (material storage portion), substrate is deposited with by it across mask;With evaporation source travel mechanism, it is being carried out
Make described evaporation source relative to described substrate relative movement during evaporation.This evaporation source travel mechanism has following function: make
Evaporation source and the relative position relation change of substrate, more particularly, make evaporation source and substrate in the film forming face with substrate
Relative position relation change on parallel direction, face.Further, described evaporation source travel mechanism is constituted in the following manner:
Before the vacuum state maintaining described deposited chamber starts evaporation to described substrate, make described evaporation source relative to described
Mask relative movement, utilizes the heat sent from this evaporation source to heat described mask in advance.In the present embodiment,
Make evaporation source move by evaporation source travel mechanism, thus make evaporation source change with the relative position relation of substrate, but also
Substrate travel mechanism can be set in deposited chamber, change the relative position of evaporation source and substrate by making substrate move
Relation, it is possible to so that substrate and evaporation source all move the relative position relation changing evaporation source with substrate.Therefore, exist
This described evaporation source travel mechanism also can be referred to as evaporation source position relative with substrate and close with substrate travel mechanism
It it is changeable mechanism.
In Fig. 1, an embodiment of the vacuum deposition apparatus showing the present invention in 2.Fig. 1 is with it can be seen that true
The axonometric chart after a part removed by the wall of deposited chamber 1 by the mode of the inside of empty evaporation coating device, and Fig. 2 is from deposited chamber 1
Upper surface side observe top view.In deposited chamber 1, in direction (the evaporation region vertical with film forming moving direction
Moving direction) on be arranged side by side multiple evaporation region 3,4 for substrate is deposited with.Further, described
Outside evaporation region 3,4, it is separately provided for making what evaporation source 2 kept out of the way to keep out of the way for described evaporation region 3,4
Region.
Further, in each evaporation region 3,4, it is provided with the mask seat (omitting diagram) keeping mask and substrate respectively.
The substrate moved into respectively from each moving mouth 8,9 corresponding with each evaporation region 3,4 respectively is by being located at each steaming
Plating region 3,4 in correcting mechanism be directed at mask position respectively after, when with mask alignment fixed
It is respectively provided with and is held in mask seat.
Further, evaporation region is the region instigating the filmogen from evaporation source 2 evaporation to be attached to substrate.
In the present embodiment, for the film forming speed being deposited with film making utilization be formed from the steam that described evaporation source 2 discharges
Degree is stable, constitutes evaporation source travel mechanism in the following manner: pre-before evaporation starts is hankered, and utilizes from this evaporation source
Described mask is heated by 2 heat sent in advance.Specifically, before evaporation starts, by the length direction of substrate
With any direction in width as film forming moving direction, make evaporation source 2 at this one-tenth in evaporation region 3,4
Move back and forth on film moving direction and carry out heat adaptation operating.This moves must be not necessarily to move back and forth, it is also possible to be
Circular motion etc..Further, if the variation of film forming speed is inhibited compared with not carrying out situation about preheating, then this is pre-
Heat is for making the stable heating of film forming speed.Preferably, to make the variation of film forming speed be in predetermined in preheating
In the range of regulation.But, about whether being in the range of regulation, it is not necessary to all verify when each film forming,
Preheating time can be determined by preliminary experiment etc..
This preheating be in order to the degassing and film forming speed to make to be accommodated in the filmogen in evaporation source 2 stable in the way of
The molten condition making filmogen is stablized and is carried out, such as, make evaporation source 2 be warming up to and heating-up temperature phase during film forming
Same temperature also heats the degree of a few minutes to carry out this preheating.Further, the evaporation source 2 of the present embodiment is as shown in Figure 2
It is made up of 3 line sources like that.
Furthermore it is possible to carry out the position of substrate to be deposited with and mask in the period of the preheating being evaporated source 2 simultaneously
Put alignment.
Namely it is preferred that utilize substrate to be deposited with during preparing with the calibration of mask and the heating in advance etc. of evaporation source 2,
The heating in advance being masked.
The required time is started, it is preferred that set the preheating temperature of evaporation source 2 in order to foreshorten to film forming further
Translational speed based on evaporation source travel mechanism with evaporation source 2, in order to when the calibration of completing substrate and mask
Terminate the heating in advance of mask.Thereby, it is possible to cut down the pre-heated stand-by time being only used for mask, thus utilize
The heating in advance that evaporation is masked during preparing such that it is able to prevent mask in evaporation due to from evaporation source 2
The heat that sends and thermal deformation.It addition, be evaporation source 2 for pre-heated thermal source, it is not necessary to prepare other thermal source, and
And make use of evaporation source 2 heat of being sent when preheating, therefore, it is possible to preheat efficiently.
Further, in the prior art, the preheating of evaporation source is vapor deposition source to be arranged in buffer region (deposition material will not
The region being attached on substrate) in carry out, therefore, the preheating of evaporation source is helpless to the preheating of mask.
It is preferably configured as: as shown in Figure 1 baffle plate 7 is set on described evaporation source 2, makes this baffle plate 7 at the shape of Guan Bi
Move back and forth the heating in advance carrying out described mask relative to described mask under state.Specifically, baffle plate 7 is with opening and closing
The mode moved freely is located at the top position of evaporation source 2.Further, even if in the case of being provided with baffle plate 7,
Baffle plate 7 is heated by evaporation source 2, and mask is also heated by this warmed-up baffle plate 7.As representated by this example, under
State structure be the present invention preferred embodiment: when make evaporation source baffle plate close, make evaporation source
With the relative change in location of substrate, heating evaporation source.By constituting like this, it is possible to be present in base with evaporation source
State immediately below plate heats mask the most in advance, and, additionally it is possible to prevent the heating period in advance on substrate attached
Film.Further, as long as the steam discharged from evaporation source can be covered in order to avoid it is attached to substrate, the most not
Baffle plate necessarily must be set on evaporation source.
It addition, in the present embodiment, described evaporation source travel mechanism is constituted as follows: make described evaporation source 2
Above move in the identical direction, direction (evaporation region moving direction) that is arranged side by side with described evaporation region 3,4,
It is deposited with region 4 to another it is thus possible to move from an evaporation region 3.
Specifically, in the present embodiment, the bottom surface of deposited chamber 1 is provided with prolongs on evaporation region moving direction
The track 10 stretched, and also be provided with relative to this track 10 reciprocatingly slide movement frame-shaped evaporation region move
Employ sliding part 6.Further, it is configured to: move in this evaporation region to be provided with the upper surface of sliding part 6 and move in film forming
The upwardly extending track 11 in dynamic side, and also be provided with moving relative to the reciprocatingly slide film forming of movement of this track 11
Employ sliding part 5, evaporation source 2 and baffle plate 7 to be arranged on this film forming and move with on sliding part 5.And, move in film forming
The bottom surface employing sliding part 5 is linked with the arm member 12 moved for making film forming move with sliding part 5.Further, drive
The film forming that makes this arm member 12 dynamic moves and moves at film forming moving direction or evaporation region with sliding part 5 (evaporation source 2)
The control device that side moves up is arranged on the outside of deposited chamber 1, constitutes evaporation source travel mechanism.
Therefore, it is possible to make an evaporation source 2 move back and forth along film forming moving direction in an evaporation region 3 and carry out
After heating in advance or film forming, move along evaporation region moving direction and similarly enter in another evaporation region 4
Row heating or film forming in advance.
It addition, in the present embodiment, described evaporation source travel mechanism is constituted in the following manner: to being respectively arranged at
State the mask in multiple evaporation region 3,4 when heating in advance, make described evaporation source 2 described keep out of the way district not keeping out of the way
In the case of in territory, the side of being arranged side by side in described evaporation region 3,4 moves up, and moves from an evaporation region 3
It is deposited with region 4 to another.
In figure 3, the track of the vapor deposition source 2 after substrate is started evaporation is represented with thick line.To being arranged on one
Evaporation region 3 in substrate film forming in the case of, make evaporation source 2 with from clip evaporation region 3 extend at track 10
2 buffer regions setting up of side in a buffer region arrive another buffer region through evaporation region 3
Mode, move back and forth the number of times of regulation.To being arranged at another after to the substrate film forming being arranged in evaporation region 3
Steaming in the case of substrate in individual evaporation region 4 carries out film forming, in the buffer region in the outside being positioned at evaporation region 3
Rise and 2 move on evaporation region moving direction, until it reaches the buffer region in the outside in evaporation region 4.Then,
Following actions is repeated: make evaporation source 2 with from clipping what evaporation region 4 set up in the side that track 10 extends
A buffer region in 2 buffer regions arrives the mode of another buffer region through evaporation region 4, back and forth moves
The number of times of dynamic regulation.In such manner, it is possible to the substrate being arranged in each evaporation region 3,4 is carried out film forming respectively.
To this, in the diagram, the vapor deposition source 2 when heating in advance being masked before starting to be deposited with is represented with thick line
Track.In the case of pre-heated to the mask being arranged in an evaporation region 3, as shown in Figure 4, make steaming
Rise 2 number of times moving back and forth regulation in evaporation region 3 along track 11 on film forming moving direction.Then,
In the case of pre-heated to the mask being arranged in another evaporation region, vapor deposition source 2 is made not move to evaporation
Move on the moving direction of evaporation region from the end in evaporation region 3 in the case of in the buffer region in the outside in region 3
Dynamic, until it reaches the corresponding end in another evaporation region 4.Then, repeat to make evaporation source 2 in evaporation district
The such action of number of times back and forth specified along film forming moving direction in territory 4, to the mask being arranged in evaporation region 4
Heat in advance.In such manner, it is possible to mask is heated in advance, until the mask heat being arranged in evaporation region 3,4 is saturated.
When the heating in advance being masked, different from the situation of evaporation, do not make evaporation source 2 move to buffer region,
It is possible to the heating in advance being more efficiently masked.
As mentioned above, in the present embodiment, when being deposited with, respectively to each evaporation district before starting evaporation
The mask in territory heats in advance, after making its heat saturated, continuous to the substrate being arranged in successively in each evaporation region 3,4
Ground is deposited with.By so carrying out film forming, the thermal deformation of the mask in evaporation is inhibited, and is formed in evaporation
The pattern of the thin film on substrate is not easy change such that it is able to stably realize high-precision film forming.
Owing to the inside of deposited chamber 1 keeps vacuum state, therefore, after each mask being heated in advance before starting evaporation,
It is able to maintain that the state that the heat of mask is saturated.Therefore, even if continuously multiple substrates being deposited with, it is also possible to stable
Realize high-precision film forming.
Further, the present invention is not limited to the present embodiment etc., and the concrete structure of each structural element can be suitably designed.
It follows that following embodiment is illustrated: use the vacuum deposition apparatus of the present invention, produce organic EL
Display device is as the example of organic electronic device.
First, illustrate for organic EL display to be manufactured.(a) of Fig. 5 is organic EL display dress
Putting the overall diagram of 40, (b) of Fig. 5 represents the cross section structure of 1 pixel.
As shown in (a) of Fig. 5, in the viewing area 41 of display device 40, it is arranged in a matrix multiple picture
Element 42, described pixel 42 possesses multiple light-emitting component.Although details is described below, but light-emitting component is respectively
There is following structure: this structure possesses the organic layer clipped by pair of electrodes.Further, pixel said here refers to
Viewing area 41 can show the least unit of desired color.In the case of the display device of the present embodiment,
By display the 1st light-emitting component 42R of mutually different luminescence, the 2nd light-emitting component 42G, the 3rd light-emitting component 42B
Combination constitute pixel 42.Pixel more than 42 is by red light-emitting component, green luminousing element and blue light emitting device
Combination is constituted but it also may be the combination of yellow emitting light elements, cyan light emitting elements and white-light luminescent component, as long as
More than at least one color, just it is not particularly limited.
(b) of Fig. 5 is the schematic partial cross-sectional view at the A-B line in Fig. 5 (a).Pixel 42 has organic
EL element, this organic EL element possesses the 1st electrode (anode) 44, positive hole transfer layer 45 on substrate 43, sends out
Any, electron supplying layer the 47 and the 2nd electrode (negative electrode) 48 in photosphere 46R, 46G, 46B.Wherein, just
Hole transfer layer 45, luminescent layer 46R, 46G, 46B, electron supplying layer 47 are equivalent to organic layer.It addition, in this reality
Executing in mode, luminescent layer 46R is the organic EL layer sending redness, and luminescent layer 46G is the organic EL sending green
Layer, luminescent layer 46B is the organic EL layer sending blueness.Luminescent layer 46R, 46G, 46B are respectively formed as and send out
Go out redness, green, the pattern of blue light-emitting component (sometimes describing as organic EL element) correspondence.It addition, the
1 electrode 44 is formed separately for each light-emitting component.Positive hole transfer layer 45, electron supplying layer the 47, the 2nd electrode
48 can be collectively forming with multiple light-emitting components 42, it is also possible to formed respectively for each light-emitting component.Further, for
Prevent the 1st electrode the 44 and the 2nd electrode 48 short circuit due to foreign body, between the 1st electrode 44, be provided with insulating barrier
49.It is additionally, since organic EL layer to deteriorate because of moisture and oxygen, is therefore provided with for protecting organic EL unit
The protective layer 50 that part affects from moisture and oxygen.
In order to form organic EL layer in light-emitting component unit, have employed the method across forming mask.In recent years, aobvious
The high-precision refinement of showing device constantly advances, and the width employing opening in the formation of organic EL layer is tens of μm
Mask.Employing in the case of such mask carries out film forming, if mask is heated and hot from evaporation source in film forming
Deformation, then mask and the location dislocation of substrate, thus result in the pattern of the thin film on substrate from desired position
Put skew and formed.Therefore, for the film forming of these organic EL layers, it is suitable for using the vacuum deposition apparatus of the present invention.
It follows that the example of the manufacture method of organic EL display is specifically illustrated.
First, prepared substrate 43, this substrate 43 is formed with the circuit for driving organic EL display (not
Diagram) and the 1st electrode 44.
The substrate 43 being formed with the 1st electrode 44 forms acrylic resin by spin-coating method, and to be formed with the
The mode forming opening at the part of 1 electrode 44 makes acrylic resin form pattern by photoetching process, thus is formed absolutely
Edge layer 49.This peristome is equivalent to the light-emitting zone that light-emitting component reality is luminous.
Vacuum deposition apparatus moved into by the substrate 43 that will be formed with insulating barrier 49, makes positive hole transfer layer 45 as shared
Layer film forming is on the 1st electrode 44 of viewing area.Positive hole transfer layer 45 is defined by vacuum evaporation.It practice,
Owing to positive hole transfer layer 45 is formed as the size bigger than viewing area 41, therefore need not the mask of fine.
It follows that use deposition mask, to be configured to send at the part of the element of redness, formed and send redness
Luminescent layer 46R.First, the substrate 43 of formation to positive hole transfer layer 45 is moved into the vacuum deposition apparatus of Fig. 1
Evaporation region 3, carries out the position alignment with mask (calibration), and this mask has and the 1st light-emitting component 42R to be formed
Opening corresponding to region.
In the case of the mask used is not the saturated state of heat, there is following worry: mask in film forming from steaming
Rising and be heated and thermal deformation occurs, so that the position of mask and substrate offsets, luminescent layer 46R cannot be formed
In desired position.Therefore, it is intended that before substrate 43 starts evaporation, utilize the heat of vapor deposition source 2 to carry out pre-
First heat, until mask heat is saturated.Whether heat is achieved for mask saturated, can confirm that the temperature of mask is the most steady
Fixed, specifically, can confirm that whether the time fluctuation of the temperature of the mask risen by the heat of vapor deposition source 2 is in
In the range of regulation.The scope of regulation can determine according to the precision required by film forming.
On the other hand, vapor deposition source 2 is accommodated with the organic EL Material of material as luminescent layer 46R, as with
In the preparation making organic material evaporate and to be attached on substrate, preheat.Preheating refers to: in order to make to be accommodated in evaporation
The molten condition of the filmogen in source 2 is stable, with the temperature identical with heating-up temperature during film forming to evaporation source 2
Heating a few minutes.Molten condition about filmogen is the most stable, can be to using not shown thickness monitor institute
The time change of the film forming speed (evaporation rate) obtained carries out observing judging.When the molten condition of filmogen is steady
Regularly, the amount of the steam of the filmogen discharged from evaporation source 2 is stable, and therefore, the variation of film forming speed is in rule
In fixed scope.
In this example, utilize evaporation source 2 the pre-heat hankering sending and preheating required for time be masked pre-
First heat.Specifically, when making steam be not attached to substrate at closed baffle plate 7, vapor deposition source 2 is made to steam
Move back and forth in plating region and heat mask.If the temperature of mask is stable within the period to having preheated, then
Becoming while the preheating of vapor deposition source 2 completes can the state of film forming.Same in order to complete in the preheating of vapor deposition source 2
Time start film forming, if carrying out the position alignment of substrate and mask within the pre-heated period being masked in advance,
The most in hgher efficiency.Further, even if in the case of the temperature of mask still instability, continuing through steaming having preheated
Mask is heated in plating source 2, till the temperature stabilization of mask.
After the calibration confirming mask and achieving thermally-stabilised and substrate and mask completes this situation, make vapor deposition source 2
Movement keeps out of the way district to clipping in 2 buffer regions that the side that track 10 extends sets up in evaporation region 3
In territory.Then, open baffle plate 7, make vapor deposition source 2 move initially towards another buffer region, thus start evaporation,
Make vapor deposition source 2 move back and forth between 2 buffer regions, form luminescent layer 46R.
So, according to this example, in the film forming of luminescent layer 46R, mask does not deform, therefore, it is possible to regulation
Pattern on substrate, form luminescent layer 46R.And, not only without arranging firing equipment separately, and without only
The time is spent for the heating in advance of mask.I.e., it is possible to be evaporated the preheating in source 2, while utilizing in advance
Hanker the heat of generation or for the waiting time of preheating, the heating in advance being extremely efficiently masked.
Then, using mask to form the luminescent layer 46G sending green, this is covered identically with the film forming of luminescent layer 46R
Mould has the opening corresponding with the region of the 2nd light-emitting component 42G to be formed.Have with to be formed it follows that use
The mask of the opening that the region of the 3rd light-emitting component 42B is corresponding, forms the luminescent layer 46B sending blueness.In shape respectively
When becoming luminescent layer 46G, 46B, and forming carried out before luminescent layer 46R identical, make vapor deposition source 2 relative to
Mask relative movement, confirm mask heat saturated after start film forming.
In the respective film forming of luminescent layer 46R, 46G, 46B, employ mask once treat in the deposited chamber of vacuum
Machine, until next substrate is set.Therefore, the heat of mask is kept by vacuum, and therefore the hot saturation of mask obtains
To maintaining.Therefore, it is possible to omit the heating in advance that next substrate is started the mask before film forming.If to covering
The feelings that when mould carries out calibrating with substrate and makes them contact, the heat of mask causes the temperature of mask to decline to substrate escape
Under condition or in the case of the rate of film build changing evaporation film, can start to be deposited with it to newly-installed substrate
Before similarly utilize the heat from vapor deposition source 2 that mask is heated in advance.
After the film forming completing luminescent layer 46G, 46B, whole viewing area 41 forms electron supplying layer 47.
Electron supplying layer 47 is formed as the layer sharing the 1st to the 3rd luminescent layer.
Move being formed to sputtering unit to the substrate of electron supplying layer 47, form the 2nd electrode 48, then move extremely
Plasma CVD apparatus forms protective layer 50, completes organic EL display 40.
If the substrate 43 being formed with the pattern of insulating barrier 49 is being moved into vacuum deposition apparatus and is being completed protective layer 50
Be exposed to before film forming in the atmosphere comprising moisture or oxygen, then the luminescent layer being made up of organic EL Material due to moisture or
Oxygen and deteriorate.Therefore, in this example, substrate carrying-in/carrying-out between film formation device is at vacuum atmosphere or indifferent gas bromhidrosis
Carry out under atmosphere.
In the above example, carry out the heating in advance of mask when the film forming of luminescent layer, but, forming other layer
Time the heating in advance that can also be masked.
The organic EL display so obtained can form luminescent layer accurately for each light-emitting component.Cause
This, if using above-mentioned manufacture method, then can suppress the organic EL caused by the position of luminescent layer offsets to show
The generation of the unfavorable condition of device.
Further, here, the manufacture method of organic EL display is described, but be not limited to this, for
The manufacture method using all organic electronic devices of the pattern of mask formation organic layer during evaporation can similarly be answered
Use the present invention.It addition, be not limited to organic membrane, for the formation of inoranic membrane, it is also possible to similarly apply the present invention.
Claims (12)
1. a vacuum deposition apparatus, it is provided with evaporation source and evaporation source travel mechanism or substrate in deposited chamber
Travel mechanism, substrate is deposited with by described evaporation source across mask, and described evaporation source travel mechanism is when being deposited with
Described evaporation source is made to make described substrate when being deposited with relative to described substrate relative movement, described substrate travel mechanism
Relative to described evaporation source relative movement, it is characterised in that
Described evaporation source travel mechanism or described substrate travel mechanism are configured to: before described substrate starts evaporation,
Described evaporation source is utilized to carry out the heating in advance of described mask.
Vacuum deposition apparatus the most according to claim 1, it is characterised in that
Hanker pre-before making the stable evaporation of the film forming speed of the filmogen being evaporated from described evaporation source,
The heat sent from this evaporation source is utilized to carry out the heating in advance of described mask.
Vacuum deposition apparatus the most according to claim 1, it is characterised in that
Described vacuum deposition apparatus is configured to, and is provided with baffle plate on described evaporation source, makes when closing this baffle plate
The relative position relation change of described evaporation source and described mask carries out the heating in advance of described mask.
Vacuum deposition apparatus the most according to claim 1, it is characterised in that
Constitute described evaporation source travel mechanism or described substrate travel mechanism in the following manner: initially carry out the substrate being deposited with
Heating in advance with the position alignment of mask and described mask is carried out simultaneously.
5. according to the vacuum deposition apparatus described in any one in Claims 1 to 4, it is characterised in that
In described deposited chamber, the direction vertical with the moving direction of described evaporation source has been arranged side by side multiple for
The evaporation region that described substrate is deposited with,
For multiple described evaporation regions, it is respectively equipped with outside described evaporation region and makes what described evaporation source kept out of the way to keep out of the way district
Territory,
Described evaporation source travel mechanism is configured to, make described evaporation source with described evaporation region be arranged side by side direction phase
Same side moves up and can move to another evaporation region from an evaporation region,
Described evaporation source travel mechanism is configured to: carrying out pre-to the mask being respectively arranged in multiple described evaporation region
When first heating, to be arranged in one evaporation region in mask heating after, make described evaporation source do not keep out of the way described
In the case of in buffer region, the side of being arranged side by side in described evaporation region moves up, thus mobile to another evaporation
Region.
6. a vacuum deposition apparatus, it is provided with evaporation source and evaporation source travel mechanism, described steaming in deposited chamber
Rise and across mask, substrate be deposited with, described evaporation source travel mechanism when being deposited with by the length of described substrate
Any direction in direction and width makes described evaporation source at this film forming moving direction as film forming moving direction
On move back and forth, it is characterised in that
Described evaporation source travel mechanism is configured to: before starting continuous evaporating-plating, make described evaporation source cover relative to described
Mould moves, and thus carries out the heating in advance of described mask, and wherein said continuous evaporating-plating is maintain described deposited chamber
In the case of vacuum state, multiple described substrates are deposited with continuously.
7. the manufacture method being deposited with film, it is characterised in that
The manufacture method of this evaporation film has a following operation:
The operation that substrate is arranged in deposited chamber;
The filmogen being accommodated in evaporation source is heated and makes the stable operation of film forming speed;And
The steam making described filmogen across mask adheres to operation on the substrate,
In the period making the stable operation of described film forming speed, make the relative position relation of described evaporation source and described substrate
Change, and utilize the heat of described evaporation source to heat described mask.
The manufacture method of evaporation film the most according to claim 7, it is characterised in that
Utilize the heat of described evaporation source to heat the period of described mask, cover the steam of described filmogen so as not to its
Attachment is on the substrate.
The manufacture method of evaporation film the most according to claim 8, it is characterised in that
Before the steam making described filmogen adheres to operation on the substrate, to the heating of described mask until institute
State the temperature stabilization of mask.
10. a manufacture method for organic electronic device, described organic electronic device possesses multiple element, described element
Substrate possesses the organic layer clipped by pair of electrodes, it is characterised in that
The manufacture method of described organic electronic device has a following operation:
Will be formed with the operation that the substrate of multiple electrode is arranged in deposited chamber;
Make the operation that the mask possessing multiple opening is directed at relative to described substrate position;
The filmogen being accommodated in evaporation source is heated and makes the stable operation of film forming speed;And
The steam attachment making described filmogen across described mask on the substrate thus forms described organic layer
At least one of operation,
In the period making the stable operation of described film forming speed, make the relative position relation of described evaporation source and described substrate
Change, utilizes the heat of described evaporation source to heat described mask.
The manufacture method of 11. organic electronic devices according to claim 10, it is characterised in that
Utilize the heat of described evaporation source to heat the period of described mask, cover the steam of described filmogen so as not to its
Attachment is on the substrate.
The manufacture method of 12. organic electronic devices according to claim 11, it is characterised in that
Before the steam making described filmogen adheres to operation on the substrate, to the heating of described mask until institute
State the temperature stabilization of mask.
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CN106256925B (en) | 2020-10-02 |
KR20190044604A (en) | 2019-04-30 |
KR102360558B1 (en) | 2022-02-09 |
KR20160150034A (en) | 2016-12-28 |
CN112011765A (en) | 2020-12-01 |
KR102046684B1 (en) | 2019-11-19 |
CN112011765B (en) | 2022-10-21 |
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